Multilayer electronic component and external electrode for electronic component

By reducing the heat treatment temperature of the outer electrode of the multi-layer ceramic capacitor, suppressing glass elution, and using corrosion-resistant ceramic materials and glass combinations, the problem of reducing moisture-proof reliability of the multi-layer ceramic capacitor is solved, achieving higher moisture-proof reliability and more stable electrical properties.

CN120015518APending Publication Date: 2025-05-16SAMSUNG ELECTRO MECHANICS CO LTD
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Patent Information

Application Number
CN202411626394.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-11-16
Filing Date
2024-11-14
Publication Date
2025-05-16

AI Technical Summary

Technical Problem

With the miniaturization of multi-layer ceramic capacitors, the thickness of the outer electrode decreases, resulting in reduced moisture resistance and high sintering temperatures may cause the glass to elute from the surface of the outer electrode, affecting electrical properties and component characteristics.

Method used

By reducing the heat treatment temperature of the outer electrode, the phenomenon of glass eluting from the surface of the outer electrode is suppressed, and by using a combination of corrosion-resistant ceramic material and glass, an outer electrode with enhanced corrosion resistance is formed to prevent penetration of the plating solution and improve moisture-proof reliability of the multi-layer electronic components.

Benefits of technology

It realizes the reduction of the heat treatment temperature of the outer electrode, prevents glass elution, improves the moisture-proof reliability of the multi-layer electronic components, and avoids deterioration of electrical properties and deterioration of component characteristics.

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Abstract

The invention provides a multilayer electronic component and an external electrode for an electronic component. The multilayer electronic component may include: a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body, and the external electrode may include a conductive metal, a ceramic material, and glass, and the glass may include silicon (Si), boron (B), sodium (Na), and aluminum (Al).
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Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0158725 filed in the Korean Intellectual Property Office on November 16, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] The present disclosure relates to a multilayer electronic component and an external electrode for the electronic component. Background Art

[0003] Multilayer ceramic capacitors (MLCC, a type of multilayer electronic component) are chip capacitors mounted on printed circuit boards of various types of electronic products, such as image display devices including liquid crystal displays (LCDs) or plasma display panels (PDPs), computers, smart phones, and mobile phones, for charging or discharging therefrom.

[0004] Multilayer ceramic capacitors are used as components in various electronic devices because they have a small size, ensure high capacitance, and are easy to mount. With the miniaturization and realization of high output power of various electronic devices such as computers and mobile devices, the demand for miniaturization and high capacitance of multilayer ceramic capacitors has also increased.

[0005] As multilayer ceramic capacitors are miniaturized, the thickness of the external electrodes is also reduced, which may often be accompanied by a problem of reduced moisture-proof reliability. Therefore, moisture-proof reliability can be compensated by adding glass or ceramic materials to the external electrodes, but when the sintering temperature is high, as the glass is eluted from the surface of the external electrode, the electrical properties may be weakened, or problems such as deterioration of the characteristics of the multilayer ceramic capacitor by causing re-sintering of the ceramic body may occur, and therefore, research is required to solve these problems. Summary of the invention

[0006] An aspect of the present disclosure is to reduce a heat treatment temperature of an outer electrode.

[0007] An aspect of the present disclosure is to prevent a phenomenon in which glass is eluted from a surface of an external electrode.

[0008] An aspect of the present disclosure is to improve moisture-proof reliability of a multilayer electronic component by preventing penetration of a plating solution by applying an external electrode having enhanced corrosion resistance to the plating solution.

[0009] However, aspects of the present disclosure are not limited to the above and may be more easily understood in describing specific example embodiments of the present disclosure.

[0010] A multilayer electronic component according to an example embodiment of the present disclosure may include: a body including a dielectric layer and an inner electrode; and an outer electrode disposed on the body, and the outer electrode may include a conductive metal, a ceramic material, and glass, and the glass may include silicon (Si), boron (B), sodium (Na), and aluminum (Al).

[0011] A multilayer electronic component according to another exemplary embodiment of the present disclosure may include: a body including a dielectric layer and an inner electrode; and an outer electrode disposed on the body, and the outer electrode may include a conductive metal, a ceramic material, and glass, and the ceramic material may include BaTiO3, (Ba 1-x Ca x )TiO3(0 <x<1)、Ba(Ti 1-y Ca y )O3(0 <y<1)、(Ba 1-x Ca x )(Ti 1-y Zr y )O3(0 <x<1,0<y<1)、Ba(Ti 1-y Zr y )O3(0 <y<1)、K 0.5 Na 0.5 NbO3、Bi 0.5 Na 0.5 At least one of TiO3 and Pb(Zr,Ti)O3.

[0012] According to another example embodiment of the present disclosure, an external electrode for an electronic component may include: a conductive metal, a ceramic material and a glass, the glass including Si, B, Na and Al, wherein when a content (wt %) of the ceramic material in the external electrode is referred to as CE and a content (wt %) of the glass in the external electrode is referred to as GL, GL<CE is satisfied.

[0013] One of various effects of the present disclosure is to reduce the heat treatment temperature of the external electrodes.

[0014] One of the various effects of the present disclosure is to suppress the phenomenon in which glass is eluted from the surface of the external electrode.

[0015] One of the various effects of the present disclosure is to improve the moisture-proof reliability of a multilayer electronic component by providing an external electrode having strong corrosion resistance to a plating solution and preventing penetration of the plating solution.

[0016] However, the advantages and effects of the present application are not limited to the foregoing and may be more easily understood in the course of describing specific exemplary embodiments of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description taken in conjunction with the accompanying drawings, in which: Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure; Figure 2 An exploded perspective view schematically shows a multi-layer structure of an inner electrode; Figure 3 is along Figure 1 A schematic cross-sectional view taken along line II' of ; Figure 4 is along Figure 1 A schematic cross-sectional view taken along line II-II'; and Figure 5 Schematically shows Figure 3 Magnified view of the P region. DETAILED DESCRIPTION

[0018] Hereinafter, the example embodiments of the present disclosure will be described with reference to specific example embodiments and the accompanying drawings. However, the example embodiments of the present disclosure may be illustrated in many different forms and should not be construed as being limited to the specific embodiments set forth herein. The example embodiments disclosed herein are provided to better explain the present disclosure to those skilled in the art. Therefore, in the accompanying drawings, for the sake of clarity, the shapes and sizes of the elements may be exaggerated, and the same or similar reference numerals will always be used to represent the same or similar elements.

[0019] In addition, in order to clearly describe the present disclosure in the drawings, the contents irrelevant to the description are omitted, and the size (e.g., thickness) of each component shown in the drawings is arbitrarily shown for the convenience of description, but the present disclosure is not limited thereto. In addition, the same reference numerals are used to describe components having the same functions within the same conceptual scope. Throughout the specification, unless otherwise specified, when a part "includes" or "contains" a component, this means that other components are not excluded and other components may also be included.

[0020] In the drawings, a first direction may be defined as a thickness direction, a second direction may be defined as a length direction, and a third direction may be defined as a width direction.

[0021] Multilayer electronic components Figure 1 is a perspective view schematically illustrating a multilayer electronic component according to an example embodiment of the present disclosure.

[0022] Figure 2 An exploded perspective view schematically shows a multilayer structure of an inner electrode.

[0023] Figure 3 is along Figure 1 Schematic cross-sectional view taken along line II'.

[0024] Figure 4 is along Figure 1 Schematic cross-sectional view taken along line II-II'.

[0025] Figure 5 Schematically shows Figure 3 Magnified view of the P region.

[0026] In the following, reference will be made to Figures 1 to 5 A multilayer electronic component according to an exemplary embodiment of the present disclosure is described in detail. However, as an example of a multilayer electronic component, a multilayer ceramic capacitor will be described, but the multilayer electronic component of the present disclosure can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric component, a varistor, or a thermistor.

[0027] A multilayer electronic component 100 according to an example embodiment of the present disclosure may include: a body 110 including a dielectric layer 111 and internal electrodes 121 and 122; and external electrodes 131 and 132 disposed on the body 110, and the external electrodes 131 and 132 may include a conductive metal 10a, a ceramic material 10b, and a glass 10c, and the glass 10c may include silicon (Si), boron (B), sodium (Na), and aluminum (Al).

[0028] In addition, a multilayer electronic component 100 according to another exemplary embodiment of the present disclosure may include: a body 110 including a dielectric layer 111 and internal electrodes 121 and 122; and external electrodes 131 and 132 disposed on the body 110, and the external electrodes 131 and 132 may include a conductive metal 10a, a ceramic material 10b, and a glass 10c, and the ceramic material 10b may include BaTiO3, (Ba 1- x Ca x )TiO3(0 <x<1)、Ba(Ti 1-y Ca y )O3(0 <y<1)、(Ba 1-x Ca x )(Ti 1-y Zr y )O3(0 <x<1,0<y<1)、Ba(Ti 1- y Zr y )O3(0 <y<1)、K 0.5 Na 0.5 NbO3、Bi 0.5 Na 0.5 At least one of TiO3 and Pb(Zr,Ti)O3.

[0029] The main body 110 may include alternately stacked dielectric layers 111 and internal electrodes 121 and 122.

[0030] More specifically, the main body 110 may include a capacitance forming portion Ac. The capacitance forming portion Ac is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately arranged to face each other, and the dielectric layer 111 is interposed between the first internal electrode 121 and the second internal electrode 122 to form a capacitance.

[0031] There is no particular limitation on the specific shape of the main body 110, but as Figure 1 shown, the main body 110 may have a hexahedron shape or a shape similar to a hexahedron shape. Due to the shrinkage of the ceramic powder included in the main body 110 during the sintering process, the main body 110 may not have a completely straight hexahedron shape, but may have a generally hexahedron shape.

[0032] The main body 110 may have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0033] In a state where the plurality of dielectric layers 111 included in the main body 110 are sintered, adjacent dielectric layers 111 may be integrated such that it is difficult to identify the boundary between them without using a scanning electron microscope (SEM).

[0034] The material included in the dielectric layer 111 is not limited as long as sufficient electrostatic capacitance can be obtained. Generally, perovskite (ABO3)-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material may include BaTiO3-based ceramic particles, and examples of the ceramic particles may include BaTiO3, and (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1- y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), or Ba(Ti 1-y Zr y )O3 (0 < y < 1) formed by partially solid-soluting calcium (Ca) and / or zirconium (Zr) in BaTiO3.

[0035] In addition, as a material included in the dielectric layer 111 , various ceramic additives, organic solvents, binders, dispersants, etc. may be added to particles such as barium titanate (BaTiO 3 ) according to the purpose of the present disclosure.

[0036] The thickness td of the dielectric layer 111 is not limited.

[0037] In order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness of the dielectric layer 111 may be 10.0 μm or less. In addition, in order to achieve miniaturization and high capacity of the multilayer electronic component 100, the thickness of the dielectric layer 111 may be 3.0 μm or less, and in order to more easily achieve miniaturization and high capacity, the thickness of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0038] Here, the thickness td of the dielectric layer 111 may refer to a thickness td of the dielectric layer 111 disposed between the first and second internal electrodes 121 and 122 .

[0039] In addition, the thickness td of the dielectric layer 111 may refer to the size of the dielectric layer 111 in the first direction. In addition, the thickness td of the dielectric layer 111 may refer to the average thickness td of the dielectric layer 111 and may refer to the average size of the dielectric layer 111 in the first direction.

[0040] The average size of the dielectric layer 111 in the first direction can be measured by scanning the cross section of the main body 110 in the first direction and the third direction with a scanning electron microscope (SEM) at a magnification of 10000 times to obtain an image. More specifically, the average size of one dielectric layer 111 in the first direction can be obtained by measuring the size of one dielectric layer 111 in the first direction at 10 points spaced apart from each other at equal intervals in the third direction in the scanned image and calculating their average value. 10 points spaced apart from each other at equal intervals can be specified in the capacitor forming portion Ac. In addition, when the average value is obtained by extending the average value measurement to 10 dielectric layers 111, the average thickness of the dielectric layer 111 in the first direction can be more generalized.

[0041] The internal electrodes 121 and 122 may be alternately stacked with the dielectric layers 111 .

[0042] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 may be alternately arranged to face each other, and the dielectric layer 111 included in the body 110 is interposed between the first internal electrode 121 and the second internal electrode 122, and may be exposed to the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0043] More specifically, the first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed through the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second inner electrode 122.

[0044] That is, the first internal electrode 121 may be connected to the first external electrode 131 without being connected to the second external electrode 132, and the second internal electrode 122 may be connected to the second external electrode 132 without being connected to the first external electrode 131. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0045] In addition, the body 110 may be formed by alternately stacking ceramic green sheets on which the conductive paste for the first internal electrode 121 is printed and ceramic green sheets on which the conductive paste for the second internal electrode 122 is printed, and then sintering the ceramic green sheets.

[0046] The material included in the internal electrodes 121 and 122 is not particularly limited, and any material having excellent conductivity may be used. For example, the internal electrodes 121 and 122 may include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0047] In addition, the internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes including one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. The printing method of the conductive paste for internal electrodes may be a screen printing method or a gravure printing method, but the present disclosure is not limited thereto.

[0048] In addition, the thickness te of the internal electrodes 121 and 122 is not limited.

[0049] In order to ensure the reliability of the multilayer electronic component 100 in a high voltage environment, the thickness te of the internal electrodes 121 and 122 may be 3.0 μm or less. In addition, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less, and in order to more easily achieve ultra-miniaturization and high capacitance, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0050] Here, the thickness te of the internal electrodes 121 and 122 may refer to the size of the internal electrodes 121 and 122 in the first direction. In addition, the thickness te of the internal electrodes 121 and 122 may refer to the average thickness te of the internal electrodes 121 and 122 and may refer to the average size of the internal electrodes 121 and 122 in the first direction.

[0051] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning the cross section of the body 110 in the first direction and the third direction with a scanning electron microscope (SEM) at a magnification of 10000 times to obtain an image. More specifically, the average size of one internal electrode in the first direction can be obtained by measuring the size of one internal electrode in the first direction at 10 points spaced apart from each other at equal intervals in the third direction in the scanned image and calculating their average value. 10 points spaced apart from each other at equal intervals can be specified in the capacitor forming portion Ac. In addition, when the average value is obtained by extending the average value measurement to 10 internal electrodes, the average thickness of the internal electrode in the first direction can be more generalized.

[0052] In addition, in the example embodiment of the present disclosure, an average thickness td of at least one of the plurality of dielectric layers 111 and an average thickness te of at least one of the plurality of internal electrodes 121 and 122 may satisfy 2×te <td。

[0053] In other words, the average thickness td of one dielectric layer 111 may be greater than twice the average thickness te of one internal electrode 121 or 122. Preferably, the average thickness td of the plurality of dielectric layers 111 may be greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0054] Generally, high voltage electronic components have major problems caused by reliability issues due to the reduction of breakdown voltage (BDV) in a high voltage environment.

[0055] Therefore, in order to prevent a decrease in breakdown voltage under a high voltage environment, the average thickness td of the dielectric layer 111 may be made greater than twice the average thickness te of the internal electrodes 121 and 122 so that the thickness of the dielectric layer, which is the distance between the internal electrodes, may be increased, thereby improving breakdown voltage (BDV) characteristics.

[0056] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122 , the average thickness of the dielectric layer as a distance between the internal electrodes may be thin, which may reduce a breakdown voltage and a short circuit may occur between the internal electrodes.

[0057] In addition, the body 110 may include cover parts 112 and 113 provided on both end surfaces of the capacitance forming part Ac in the first direction.

[0058] Specifically, the main body 110 may include a first covering portion 112 arranged on one surface of the capacitor forming portion Ac in the first direction and a second covering portion 113 arranged on another surface of the capacitor forming portion Ac in the first direction, and more specifically, the main body 110 may include an upper covering portion 112 arranged above (upper surface) the capacitor forming portion Ac in the first direction and a lower covering portion 113 arranged below (lower surface) the capacitor forming portion Ac in the first direction.

[0059] The upper covering portion 112 and the lower covering portion 113 may be formed by stacking a single dielectric layer or two or more dielectric layers on the upper surface and the lower surface of the capacitor forming portion Ac in the first direction, respectively, and may be substantially used to prevent damage to the internal electrodes 121 and 122 due to physical stress and / or chemical stress.

[0060] The upper and lower covers 112 and 113 do not include the internal electrodes 121 and 122 and may include the same material as the dielectric layer 111. That is, the upper and lower covers 112 and 113 may include a ceramic material and may include, for example, a barium titanate (BaTiO3)-based ceramic material.

[0061] Furthermore, the thickness tc of the covering portions 112 and 113 is not limited.

[0062] However, to more easily achieve miniaturization and high capacitance of multilayer electronic components, the thickness tc of the covers 112 and 113 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra-small products.

[0063] Here, the thickness tc of the covering parts 112 and 113 may refer to the size of the covering parts 112 and 113 in the first direction. In addition, the thickness tc of the covering parts 112 and 113 may refer to the average thickness tc of the covering parts 112 and 113 and may refer to the average size of the covering parts 112 and 113 in the first direction.

[0064] The average size of the covering portions 112 and 113 in the first direction may be measured by scanning an image obtained by scanning a cross section of the body 110 in the first direction and the third direction at a magnification of 10,000 times using a scanning electron microscope (SEM). More specifically, the average size of the covering portions 112 and 113 may be obtained by measuring the sizes of the covering portions 112 and 113 in the first direction at 10 points equally spaced from each other in the three directions in an image obtained by scanning one covering portion and calculating their average value.

[0065] In addition, the average size of the covering portion in the first direction measured by the above method may have substantially the same size as the average size of the covering portion in the first direction in a cross section of the body 110 in the first and second directions.

[0066] Furthermore, the body 110 of the multilayer electronic component 100 may include side edge portions 114 and 115 provided on both end surfaces of the capacitance forming portion Ac in the third direction.

[0067] More specifically, the side edge portions 114 and 115 may include a first side edge portion 114 adjacent to the fifth surface 5 of the body 110 and a second side edge portion 115 adjacent to the sixth surface 6 of the body 110 .

[0068] like Figure 4 As shown in , the side margin parts 114 and 115 may refer to regions between ends of the first and second internal electrodes 121 and 122 in the third direction and the outer surface of the body 110 based on the cross-section of the body 110 in the first and third directions.

[0069] The side edge portions 114 and 115 may be formed in the following manner: a conductive paste for the internal electrodes 121 and 122 is applied to areas of the ceramic green sheet applied to the capacitor forming portion Ac except for areas where the side edge portions 114 and 115 are to be formed, and the stacked internal electrodes 121 and 122 are cut so that the internal electrodes 121 and 122 are exposed to two end surfaces of the capacitor forming portion Ac opposite to each other in a third direction, thereby suppressing a step difference caused by the internal electrodes 121 and 122, and then a single dielectric layer or two or more dielectric layers are stacked on the two end surfaces of the capacitor forming portion Ac in the third direction.

[0070] The side margin parts 114 and 115 may serve to prevent the internal electrodes 121 and 122 from being damaged due to physical stress and / or chemical stress.

[0071] The first and second side margin portions 114 and 115 do not include the internal electrodes 121 and 122, and may include the same material as the dielectric layer 111. That is, the first and second side margin portions 114 and 115 may include a ceramic material, and may include, for example, a barium titanate (BaTiO3)-based ceramic material.

[0072] In addition, the width wm of the first side margin portion 114 and the second side margin portion 115 is not limited.

[0073] However, to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100 , the width wm of the side margin parts 114 and 115 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra-small products.

[0074] Here, the width wm of the side margin portions 114 and 115 may refer to the size of the side margin portions 114 and 115 in the third direction. In addition, the width wm of the side margin portions 114 and 115 may refer to the average width wm of the side margin portions 114 and 115 and may refer to the average size of the side margin portions 114 and 115 in the third direction.

[0075] The average size of the side edge portions 114 and 115 in the third direction may be measured by scanning a cross section of the body 110 in the first direction and the third direction using a scanning electron microscope (SEM) at a magnification of 10,000 times to obtain an image. More specifically, the average size of the side edge portions 114 and 115 may be obtained by measuring the sizes of the side edge portions 114 and 115 in the third direction at 10 points equally spaced from each other in the first direction in an image obtained by scanning one side edge portion and calculating their average value.

[0076] In the example embodiment of the present disclosure, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number or shape of the external electrodes 131 and 132 may be changed according to the shapes of the internal electrodes 121 and 122 or other purposes.

[0077] The external electrodes 131 and 132 may be disposed on the body 110 and may be connected to the internal electrodes 121 and 122 , respectively.

[0078] More specifically, the external electrodes 131 and 132 may be disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and may include a first external electrode 131 and a second external electrode 132 respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and may be connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and may be connected to the second internal electrode 122.

[0079] In addition, the external electrodes 131 and 132 may be provided to extend to a portion of the first surface 1 and a portion of the second surface 2 of the body 110, and may also be provided to extend to a portion of the fifth surface 5 and a portion of the sixth surface 6 of the body 110. That is, the first external electrode 131 may be provided on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110 and on the third surface 3 of the body 110, and the second external electrode 132 may be provided on a portion of the first surface 1, a portion of the second surface 2, a portion of the fifth surface 5, and a portion of the sixth surface 6 of the body 110 and on the fourth surface 4 of the body 110.

[0080] In an example embodiment of the present disclosure, the external electrodes 131 and 132 may include a conductive metal 10 a , a ceramic material 10 b , and glass 10 c .

[0081] A material having excellent conductivity may be used as the conductive metal 10 a included in the external electrodes 131 and 132 , for example, the conductive metal 10 a may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, and the present disclosure is not particularly limited thereto.

[0082] The ceramic material 10b included in the external electrodes 131 and 132 may include a perovskite (ABO3)-based ceramic material (such as a barium titanate (BaTiO3)-based material, a K 0.5 Na 0.5 NbO3、Bi 0.5 Na 0.5 At least one of TiO3 and Pb(Zr,Ti)O3).

[0083] More specifically, the ceramic material 10b included in the external electrodes 131 and 132 may include BaTiO3, (Ba 1-x Ca x )TiO3(0 <x<1)、Ba(Ti 1-y Ca y )O3(0 <y<1)、(Ba 1-x Ca x )(Ti 1-y Zr y )O3(0 <x<1,0<y<1)、Ba(Ti 1-y Zr y )O3(0 <y<1)、K 0.5 Na 0.5 NbO3、Bi 0.5 Na 0.5 At least one of TiO3 and Pb(Zr,Ti)O3.

[0084] However, the present disclosure is not particularly limited thereto, and in the above-mentioned perovskite (ABO3) structure of the ceramic material, the A site or the B site may be substituted by at least one of lithium (Li), barium (Ba), calcium (Ca), aluminum (Al), copper (Cu), zirconium (Zr), and titanium (Ti). In other words, the ceramic material may include at least one of lithium (Li), barium (Ba), calcium (Ca), aluminum (Al), copper (Cu), zirconium (Zr), and titanium (Ti).

[0085] The ceramic material 10 b included in the external electrodes 131 and 132 may play a role in a sintering process of a paste for the external electrodes during a sintering process of forming the external electrodes.

[0086] When sintering of the paste for the external electrode proceeds too fast, densification of the external electrode may be reduced, or the external electrode may be peeled or delaminated from the body.

[0087] Generally, the ceramic material 10 b has a higher melting point than those of the conductive metal 10 a and the glass 10 c , so that the paste for the external electrode includes the ceramic material 10 b , the sintering progress rate of the external electrode may be reduced.

[0088] In the present disclosure, as an example of a more specific method of measuring the content of an element included in each component of the multilayer electronic component 100, in the case of a destructive method, an energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), an EDS mode of a transmission electron microscope (TEM), or an EDS mode of a scanning transmission electron microscope (STEM) may be used to analyze the components. First, a thin-section analysis sample is prepared using a focused ion beam (FIB) device in a region to be observed in the sintered multilayer electronic component 100. Then, a damaged layer on the surface of the thin-section analysis sample is removed using xenon (Xe) ion milling or argon (Ar) ion milling, and then, a qualitative / quantitative analysis is performed by mapping each component to be measured in an image obtained using SEM-EDS, TEM-EDS, or STEM-EDS. In this case, the qualitative / quantitative analysis graph of each component may be expressed in terms of mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. In this case, based on the qualitative / quantitative analysis graph, the molar number of other components may be converted from the molar number of a specific component.

[0089] By another method, the pieces may be crushed and a region to be measured may be selected, and in the selected region, a device such as inductively coupled plasma spectroscopy (ICP-OES) and inductively coupled plasma mass spectrometry (ICP-MS) may be used to analyze the composition of the corresponding region.

[0090] In the multilayer electronic component 100 according to the example embodiment of the present disclosure, the external electrodes 131 and 132 may include 3 wt % or more and 20 wt % or less of the ceramic material 10 b relative to the total component content in the external electrodes 131 and 132 .

[0091] The external electrodes 131 and 132 may include the ceramic material 10 b in an amount of 3 wt % or more and 20 wt % or less, thereby improving densification of the external electrodes 131 and 132 and suppressing an increase in contact resistance between the internal electrodes 121 and 122 and the external electrodes 131 and 132 .

[0092] When the external electrodes 131 and 132 include less than 3 wt % of the ceramic material 10 b, peeling or delamination of the external electrodes 131 and 132 may occur because the sintering delay effect of the external electrodes 131 and 132 may not be significant, and when the external electrodes 131 and 132 include more than 20 wt % of the ceramic material 10 b, this may interfere with the contact between the internal electrodes 121 and 122 and the external electrodes 131 and 132, resulting in problems such as deterioration of electrical connectivity or increase in equivalent series resistance (ESR).

[0093] The glass 10c included in the external electrodes 131 and 132 may include silicon (Si), boron (B), sodium (Na), and aluminum (Al), and the composition of the glass 10c may include SiO2, B2O3, Na2O, and Al2O3. For example, the glass 10c may include borosilicate glass, a low melting point glass.

[0094] However, the present disclosure is not particularly limited thereto, and the glass 10c may further include at least one of copper (Cu), bismuth (Bi), zinc (Zn), zirconium (Zr), lithium (Li), titanium (Ti), calcium (Ca), and lead (Pb), and the composition of the glass 10c may further include at least one of CuO, Bi2O3, ZnO, ZrO, Li2O, TiO2, CaCO3, NaHCO3, and PbO.

[0095] The glass 10 c included in the external electrodes 131 and 132 may serve to reduce a sintering temperature of a paste for the external electrodes during a sintering process of forming the external electrodes.

[0096] Since the glass 10c induces low temperature sintering of the external electrodes 131 and 132, deterioration of electrical characteristics can be suppressed by preventing a pooling phenomenon in which glass is eluted from the surfaces of the external electrodes 131 and 132, and since the heat treatment temperature of the external electrodes 131 and 132 can be reduced, re-sintering of the body 110 can be prevented, thereby preventing a problem of deteriorating characteristics of the multilayer electronic component 100. Here, the above-mentioned glass 10c may include, for example, borosilicate glass (a low melting point glass).

[0097] In particular, since the low melting point glass is included, the reliability of the multilayer electronic component 100 may be improved by increasing corrosion resistance to a plating solution.

[0098] The content of the glass 10 c included in the external electrodes 131 and 132 is not particularly limited, but may be less than the content of the ceramic material 10 b included in the external electrodes 131 and 132 .

[0099] In other words, when the content (wt%) of the ceramic material 10b included in the outer electrodes 131 and 132 is referred to as CE, and the content (wt%) of the glass 10c included in the outer electrodes 131 and 132 is referred to as GL, GL < CE can be satisfied, and in the paste for forming the outer electrode, GL < CE can be satisfied.

[0100] Since GL < CE is satisfied, the low-temperature sintering of the outer electrodes 131 and 132 can proceed smoothly, and an increase in the heat treatment temperature due to the ceramic material 10b can be suppressed, thereby preventing the main body from being re-sintered.

[0101] When the content GL of the glass 10c included in the outer electrodes 131 and 132 is greater than the content CE of the ceramic material 10b (CE < GL), since an excessive amount of the glass 10c is added, the sintering of the outer electrodes 131 and 132 may not proceed sufficiently, or the glass may elute from the surfaces of the outer electrodes 131 and 132.

[0102] In this case, the content GL of the glass 10c included in the outer electrodes 131 and 132 can be 0.1 times to 0.2 times the content CE of the ceramic material 10b included in the outer electrodes 131 and 132. In other words, the contents CE and GL can satisfy 0.1×CE ≤ GL ≤ 0.2×CE.

[0103] Since 0.1×CE ≤ GL ≤ 0.2×CE is satisfied, the low-temperature sintering of the outer electrodes 131 and 132 can proceed smoothly, and an increase in the heat treatment temperature due to the ceramic material 10b can be suppressed, thereby preventing the main body from being re-sintered.

[0104] When GL < 0.1×CE is satisfied, the main body may be re-sintered due to an increase in the heat treatment temperature caused by the ceramic material 10b because the sintering temperature is not sufficiently reduced, and when 0.2×CE < GL is satisfied, since an excessive amount of the glass 10c is added, the sintering of the outer electrodes 131 and 132 may not proceed sufficiently, and / or the glass may elute from the surfaces of the outer electrodes 131 and 132.

[0105] In addition, the content GL of the glass 10c included in the outer electrodes 131 and 132 can be greater than 0 times and less than or equal to 0.2 times the content of the conductive metal 10a included in the outer electrodes 131 and 132.

[0106] The content GL of the glass 10c included in the external electrodes 131 and 132 satisfies greater than 0 times and less than or equal to 0.2 times the content of the conductive metal 10a included in the external electrodes 131 and 132, low-temperature sintering of the external electrodes 131 and 132 can be smoothly performed, and the electrical connectivity between the external electrodes 131 and 132 and the internal electrodes 121 and 122 can not be degraded, and degradation of the internal electrodes 121 and 122 can be prevented.

[0107] When the content GL of the glass 10c included in the external electrodes 131 and 132 is greater than 0.2 times the content of the conductive metal 10a included in the external electrodes 131 and 132, due to the addition of excessive glass 10c, the sintering of the external electrodes 131 and 132 may not be sufficiently performed, and the electrical connectivity between the external electrodes 131 and 132 and the internal electrodes 121 and 122 may be deteriorated, and / or the glass may be eluted from the surfaces of the external electrodes 131 and 132.

[0108] The description of the external electrodes 131 and 132 described above may be applicable to the sintered electrodes described below, and when the external electrodes 131 and 132 have, for example, a multilayer structure, the above description may be applicable to the electrode layer, and more specifically, the above description may be applicable to the first electrode layer.

[0109] As described above, the external electrodes 131 and 132 may be formed using any material as long as the material (such as metal) has conductivity, and a specific material may be determined in consideration of electrical characteristics, structural stability, etc., and may have a multi-layered structure.

[0110] For example, the external electrodes 131 and 132 may include an electrode layer disposed on the body 110 and a plating layer disposed on the electrode layer.

[0111] For a more specific example of the electrode layer, the electrode layer may include a first electrode layer, which is a sintered electrode including a first conductive metal and glass, and optionally, the electrode layer may further include a second electrode layer, which is a resin-based electrode including a second conductive metal and resin.

[0112] Here, the conductive metal included in the first electrode layers 131a and 132a may be referred to as a first conductive metal, and the conductive metal included in the second electrode layers 131b and 132b may be referred to as a second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same as or different from each other, and when a plurality of conductive metals are included, only some of the same conductive metals may be included, but the present disclosure is not particularly limited thereto.

[0113] In addition, the electrode layers 131a, 132a, 131b, and 132b may be formed by sequentially forming a sintered electrode and a resin-based electrode on a body.

[0114] In addition, the electrode layers 131a, 132a, 131b, and 132b may be formed by transferring a sheet including a conductive metal onto a body, or may be formed by transferring a sheet including a conductive metal onto a sintered electrode.

[0115] A material having excellent conductivity may be used as the conductive metal included in the electrode layers 131a, 132a, 131b and 132b, for example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti) and alloys thereof, but the present disclosure is not particularly limited thereto.

[0116] In an example embodiment of the present disclosure, the electrode layers 131a, 132a, 131b and 132b may have a double-layer structure including first electrode layers 131a and 132a and second electrode layers 131b and 132b, and thus, the external electrodes 131 and 132 may include: first electrode layers 131a and 132a including a first conductive metal and glass; and second electrode layers 131b and 132b disposed on the first electrode layers 131a and 132a and including a second conductive metal and resin.

[0117] The first electrode layers 131 a and 132 a may improve adhesion to the body 110 by including glass, and the second electrode layers 131 b and 132 b may improve bending strength by including resin.

[0118] The first conductive metal included in the first electrode layers 131 a and 132 a is not particularly limited as long as the material of the first conductive metal can be electrically connected to the internal electrodes 121 and 122 to form capacitance, and may include, for example, one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0119] The first electrode layers 131 a and 132 a may be formed by coating a conductive paste prepared by adding glass frit to first conductive metal particles and then sintering the conductive paste.

[0120] The second conductive metal included in the second electrode layers 131 b and 132 b may serve to electrically connect to the first electrode layers 131 a and 132 a .

[0121] The second conductive metal included in the second electrode layers 131 b and 132 b is not particularly limited as long as the material of the second conductive metal can be electrically connected to the first electrode layers 131 a and 132 a, and may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0122] The second conductive metal included in the second electrode layers 131b and 132b may include one or more of spherical particles and flaky particles. That is, the conductive metal may consist of only flaky particles or only spherical particles, or may be a mixture of flaky particles and spherical particles. Here, the spherical particles may also include shapes that are not completely spherical, for example, shapes in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. Flaky particles refer to particles having a flat and elongated shape, and although the present disclosure is not particularly limited, the flaky particles may have, for example, a length ratio (major axis / minor axis) greater than or equal to 1.95. The length of the major axis and the length of the minor axis of the spherical particles and the flaky particles can be measured from an image obtained by scanning a cross section in the first direction and the second direction cut from the center of the multilayer electronic component in the third direction with a scanning electron microscope (SEM).

[0123] The resin included in the second electrode layers 131b and 132b can ensure adhesion and be used to absorb impact. The resin included in the second electrode layers 131b and 132b is not particularly limited as long as the resin has adhesion and can absorb impact and can be mixed with the second conductive metal particles to make a paste, and may include, for example, an epoxy resin.

[0124] In addition, the second electrode layers 131b and 132b may include a plurality of metal particles, an intermetallic compound, and a resin. By including the intermetallic compound, the electrical connectivity with the first electrode layers 131a and 132a may be further improved. The intermetallic compound may be used to improve electrical connectivity by connecting a plurality of metal particles, and may be used to surround a plurality of metal particles and connect the metal particles to each other.

[0125] In this case, the intermetallic compound may include a metal having a melting point lower than the solidification temperature of the resin. That is, because the intermetallic compound includes a metal having a melting point lower than the solidification temperature of the resin, the metal having a melting point lower than the solidification temperature of the resin melts during the drying and solidification process and forms the intermetallic compound with a portion of the metal particles, thereby surrounding the metal particles. In this case, the intermetallic compound may preferably include a low melting point metal having a melting point of 300° C. or lower.

[0126] For example, the intermetallic compound may include Sn having a melting point of 213° C. to 220° C. In the drying and solidification process, Sn is melted, and the molten Sn wets high melting point metal particles (such as Ag, Ni, or Cu) by capillary action and reacts with some of the Ag, Ni, and Cu metal particles to form an intermetallic compound (such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn). Ag, Ni, or Cu that does not participate in the reaction remains in the form of metal particles.

[0127] Thus, the plurality of metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0128] The plating layers 131c and 132c may be used to improve mounting characteristics.

[0129] The type of the plating layers 131c and 132c is not particularly limited, and may include one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof. The plating layers 131c and 132c may be formed as a single layer or multiple layers.

[0130] For a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, and may be in a form in which Ni plating layers and Sn plating layers are sequentially formed on the electrode layer, and may be in a form in which Sn plating layers, Ni plating layers, and Sn plating layers are sequentially formed. In addition, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0131] The size of the multilayer electronic component 100 is not limited.

[0132] However, in order to achieve both miniaturization and high capacitance, the thickness of the dielectric layer and the internal electrode must be thinned to increase the number of stacks, and therefore, in a multilayer electronic component 100 having a size of 3216 (length×width: 3.2 mm×1.6 mm) or less, the effect according to the present disclosure may be more significant.

[0133] Here, the multilayer electronic component 100 having a size of 3216 or less may mean that the average length (average dimension in the second direction) of the multilayer electronic component is 3.2 mm or less, and the average width (average dimension in the third direction) may be 1.6 mm or less, but this does not mean that these values ​​are precisely met, but may be a concept including an error of about 10%.

[0134] Although the exemplary embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments and the accompanying drawings, but is defined by the appended claims. Therefore, without departing from the scope of the present disclosure defined by the appended claims, a person of ordinary skill in the art may make various substitutions, modifications or changes, and these substitutions, modifications or changes should be interpreted as being included within the scope of the present disclosure.

[0135] In addition, the expression "exemplary embodiment" used in the present disclosure does not mean the same embodiment, but is provided to emphasize and explain different unique characteristics. However, the embodiment presented above does not exclude the combination of features with another embodiment. For example, although the content described in a specific embodiment is not described in another embodiment, the content described in the specific embodiment can also be understood as a description related to another embodiment, unless there is a description contrary to or contradictory to the content in another embodiment.

[0136] In the present disclosure, the terms are used only to describe specific embodiments and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, a singular form may also include a plural form.

Claims

1. A multilayer electronic component comprising: a body including a dielectric layer and an inner electrode; as well as The external electrode is disposed on the body and includes a conductive metal, a ceramic material and glass, wherein the glass includes Si, B, Na and Al.

2. The multilayer electronic component according to claim 1, wherein The glass includes borosilicate glass.

3. The multilayer electronic component according to claim 1, wherein: The glass also includes at least one of Cu, Bi, Zn, Zr, Li, Ti, Ca and Pb.

4. The multilayer electronic component according to claim 1, wherein: The ceramic material includes BaTiO3, K 0.5 Na 0.5 NbO3、Bi 0.5 Na 0.5 At least one of TiO3 and Pb(Zr,Ti)O3.

5. The multilayer electronic component according to claim 1, wherein The ceramic material includes at least one of Li, Ba, Ca, Al, Cu, Zr and Ti.

6. The multilayer electronic component according to claim 1, wherein: When the weight percentage content of the ceramic material included in the external electrode is referred to as CE, and the weight percentage content of the glass included in the external electrode is referred to as GL, GL is satisfied. <CE。 7. The multilayer electronic component according to claim 6, wherein: CE and GL satisfy 0.1×CE≤GL≤0.2×CE.

8. The multilayer electronic component according to claim 1, wherein The conductive metal includes at least one of Cu, Ni, Ag, Sn and alloys thereof.

9. The multilayer electronic component according to claim 1, wherein: The glass includes SiO2, B2O3, Na2O and Al2O3.

10. The multilayer electronic component according to claim 1, wherein The glass includes at least one of CuO, Bi2O3, ZnO, ZrO, Li2O, TiO2, CaCO3, NaHCO3 and PbO.

11. A multilayer electronic component comprising: a body including a dielectric layer and an inner electrode; as well as an external electrode, disposed on the body and comprising a conductive metal, a ceramic material and a glass, Wherein, the ceramic material includes BaTiO3, (Ba 1-x Ca x )TiO3、Ba(Ti 1-y Ca y )O3、(Ba 1-x Ca x )(Ti 1-y Zr y )O3、Ba(Ti 1-y Zr y )O3、K 0.5 Na 0.5 NbO3、Bi 0.5 Na 0.5 At least one of TiO3 and Pb(Zr,Ti)O3, wherein 0 <x<1,0<y<1。 12. The multilayer electronic component according to claim 11, wherein The glass includes borosilicate glass.

13. The multilayer electronic component according to claim 11, wherein The glass includes Si, B, Na and Al.

14. The multilayer electronic component according to claim 11, wherein The glass includes at least one of Cu, Bi, Zn, Zr, Li, Ti, Ca and Pb.

15. The multilayer electronic component according to claim 11, wherein The ceramic material includes at least one of Li, Ba, Ca, Al, Cu, Zr and Ti.

16. The multilayer electronic component according to claim 11, wherein When the weight percentage content of the ceramic material included in the external electrode is referred to as CE, and the weight percentage content of the glass included in the external electrode is referred to as GL, GL is satisfied. <CE。 17. The multilayer electronic component according to claim 16, wherein: CE and GL satisfy 0.1×CE≤GL≤0.2×CE.

18. The multilayer electronic component according to claim 11, wherein The conductive metal includes at least one of Cu, Ni, Ag, Sn and alloys thereof.

19. The multilayer electronic component according to claim 11, wherein: The glass includes SiO2, B2O3, Na2O and Al2O3.

20. The multilayer electronic assembly according to claim 11, wherein The glass includes at least one of CuO, Bi2O3, ZnO, ZrO, Li2O, TiO2, CaCO3, NaHCO3 and PbO.

21. An external electrode for an electronic component, comprising: Conductive metals, ceramic materials and glass, the glass comprising Si, B, Na and Al, When the weight percentage content of the ceramic material in the external electrode is referred to as CE, and the weight percentage content of the glass in the external electrode is referred to as GL, GL<CE is satisfied.

22. The external electrode according to claim 21, wherein 0.1×CE≤GL≤0.2×CE.

23. The external electrode according to claim 21, wherein The ceramic material includes at least one of Li, Ba, Ca, Al, Cu, Zr and Ti.

24. The external electrode according to claim 21, wherein The glass includes at least one of Cu, Bi, Zn, Zr, Li, Ti, Ca and Pb.

Citation Information

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