Etching and adhesive removal integrated cavity

Abstract

The application discloses an etching and degumming integrated cavity, which comprises a working chamber, a turnover mechanism, an etching mechanism and a degumming mechanism. The turnover mechanism is rotatably suspended in the working chamber and divides the inner cavity of the working chamber into an etching cavity and a degumming cavity. The etching mechanism is used for realizing etching of a wafer in the etching cavity, and the degumming mechanism is used for realizing degumming of the wafer in the degumming cavity. The turnover mechanism comprises a spherical shell, a first carrier, a second carrier, a turnover driver and a jacking mechanism. The first carrier and the second carrier are symmetrically arranged at two ends of the spherical shell. The jacking mechanism can cooperate with a wafer feeding device to deliver wafers to the first carrier and the second carrier. The turnover driver is used for driving the spherical shell to rotate so as to exchange the positions of the first carrier and the second carrier. The wafer can successively receive etching and degumming treatment in the working chamber. The etching and degumming functions are integrated in one cavity, the number of wafer transfer between different devices and the waiting time are reduced, and the production efficiency is improved.

Description

Technical Field

[0001] This application relates to the field of wafer surface treatment technology, and in particular to an integrated etching and resist removal cavity. Background Technology

[0002] In semiconductor chip manufacturing, microelectromechanical systems (MEMS) processing, and other precision micro-nano processing industries, etching and resist stripping are indispensable and critical steps that require extremely high process precision and efficiency.

[0003] In traditional manufacturing processes, etching and photoresist stripping are performed using separate equipment. Etching removes material from specific areas of the wafer surface using chemical or physical methods to form the desired circuit patterns or microstructures. Photoresist stripping, on the other hand, removes the photoresist used to protect and aid in etching after etching. However, these separate pieces of equipment lack effective integration and coordination. During wafer fabrication, frequent transfers between devices not only require complex transport systems, consuming significant time, but also inevitably increase the risk of particle contamination and mechanical damage, thus affecting product yield and increasing production costs.

[0004] Furthermore, with the rapid development of the semiconductor industry and the continuous expansion of production scale, the use of a large number of independent devices has made production space extremely scarce. The increased footprint of equipment not only means that companies need to invest more funds in site leasing and construction, but also increases the difficulty of equipment management and maintenance, further increasing operating costs. Summary of the Invention

[0005] The purpose of this application is to overcome the shortcomings of the existing technology and provide an integrated etching and resist removal cavity.

[0006] This application provides an integrated etching and resist removal cavity, comprising: a working chamber for providing space for wafer processing; a flipping mechanism rotatably suspended within the working chamber, dividing the inner cavity of the working chamber into an etching cavity and a resist removal cavity; an etching mechanism for etching the wafer within the etching cavity; and a resist removal mechanism for removing the resist from the wafer within the resist removal cavity. The flipping mechanism includes: a spherical shell, the top and bottom surfaces of which are planar, and the circumferential surface connecting the top and bottom surfaces being spherical; a first stage disposed on the top surface; and a second stage disposed on the bottom surface. The first and second stages are symmetrically arranged, and when one of the first and second stages is in the etching cavity, the other is in the resist removal cavity. Both the first and second stages employ electrostatic chucks. A flipping driver is used to drive the spherical shell to rotate, thereby exchanging the positions of the first and second stages. A lifting mechanism is disposed within the spherical shell, and the lifting mechanism includes: a first ejector pin, a first... The stage has a first through hole through which a first ejector pin can pass; a second ejector pin has a second through hole on the second stage, through which the second ejector pin can pass; a lifting driver is used to drive the first ejector pin to move closer to or away from the first through hole, and the second ejector pin to move closer to or away from the second through hole; when the first stage is located in the etching chamber, the lifting driver drives the first ejector pin to rise, allowing the first ejector pin to pass through the first through hole and receive the wafer; after obtaining the wafer, the lifting driver drives the first ejector pin to fall onto the first stage, where the first stage can fix the wafer by electrostatic adsorption; after etching the wafer, a flip driver drives the spherical shell to rotate, causing the first stage to carry the wafer into the stripping chamber, while the second stage enters the etching chamber; the lifting driver drives the second ejector pin to rise, allowing the second ejector pin to pass through the second through hole and receive the wafer; simultaneously, the wafer on the first stage can undergo stripping processing in the stripping chamber.

[0007] Furthermore, the integrated etching and resist removal chamber also includes a sealing mechanism, which is located between the spherical shell and the working chamber to prevent gas from communicating between the etching chamber and the resist removal chamber. The inner wall of the working chamber is provided with an annular groove. The sealing mechanism includes: a magnetic fluid, which fills the annular groove and can form a sealing liquid film under the action of a magnetic field; and an elastic sealing lip, which is arranged around the circumference of the spherical shell. Under normal working conditions, the spherical shell is stationary, the elastic sealing lip is in close contact with the sealing liquid film, and the magnetic fluid and the elastic sealing lip work together to achieve a seal between the spherical shell and the working chamber.

[0008] Furthermore, the upper part of the work chamber is provided with a first wafer inlet and the lower part with a second wafer inlet. The first wafer inlet is connected to the etching chamber and the second wafer inlet is connected to the resist removal chamber. The wafer to be etched can enter the work chamber through the first wafer inlet. The wafer that has completed etching and resist removal can leave the work chamber through the second wafer inlet.

[0009] Furthermore, the upper part of the working chamber is provided with a first air inlet and a first air outlet, through which the etching reaction gas can enter the etching chamber and exit the etching chamber through the first air outlet; the lower part of the working chamber is provided with a second air inlet and a second air outlet, through which the resist removal reaction gas can enter the resist removal chamber and exit the resist removal chamber through the second air outlet; the first air outlet and the second air outlet are located near the connection position between the spherical shell and the working chamber.

[0010] Furthermore, the etching and resist removal integrated cavity also includes a temperature control mechanism, which is used to regulate the temperature of the first stage and the second stage; the temperature control mechanism can cool down the first stage or the second stage in the etching cavity, and can heat up the second stage or the first stage in the resist removal cavity.

[0011] Furthermore, both the first and second stages are equipped with temperature-controlled channels; the temperature control mechanism includes a heating pipe and a cooling pipe; when the first or second stage is in the etching chamber, the cooling pipe is connected to the temperature-controlled channel, and the coolant can enter the temperature-controlled channel through the cooling pipe to cool down the first or second stage; when the first or second stage is in the desizing chamber, the heating pipe is connected to the temperature-controlled channel, and the heating agent can enter the temperature-controlled channel through the heating pipe to heat up the first or second stage.

[0012] Furthermore, the lifting actuator includes: a gear and a rack, the rack being disposed between the first ejector pin and the second ejector pin; when the gear meshes with the rack, the gear rotates, and the rack can lift the first ejector pin or the second ejector pin under the transmission of the gear; a first mounting plate, on which a plurality of first ejector pins are provided; a second mounting plate, on which a plurality of second ejector pins are provided; a first elastic element, one end of which is connected to the first mounting plate and the other end of which is connected to the inner top surface of the spherical shell; a second elastic element, one end of which is connected to the second mounting plate and the other end of which is connected to the inner bottom surface of the spherical shell; when the rack lifts the first mounting plate or the second mounting plate, the first elastic element or the second elastic element can both adapt to deformation and ensure that the first mounting plate and the second mounting plate remain stable after the rack disengages from the first mounting plate or the second mounting plate.

[0013] Furthermore, the tilting actuator can drive both the spherical housing to rotate and the gear to rotate; the tilting actuator includes a tilting motor, on the output shaft of which a first driving wheel and a second driving wheel are spaced apart; the tilting mechanism also includes: a rotary joint, through which the spherical housing is rotatably connected to the working chamber, the rotary joint being a tubular hollow structure; a rotating shaft, passing through the rotary joint, with the gear mounted on the rotating shaft; a first driven wheel, sleeved on the rotary joint and linked to the first driving wheel via a first belt; a second driven wheel, sleeved on the rotating shaft and linked to the second driving wheel via a second belt; a first tensioning wheel, capable of cooperating with the first driving wheel and the first driven wheel to tension the first belt; and a second tensioning wheel, capable of cooperating with the first driving wheel and the first driven wheel to tension the first belt. The second belt is tensioned by two driving pulleys and a second driven pulley; a first driving member is used to drive the first tensioning pulley closer to or away from the first belt to change the tension of the first belt; a second driving member is used to drive the second tensioning pulley closer to or away from the second belt to change the tension of the second belt; so that the second belt is in a slipping state and the first belt is in a tensioned state, the reversing motor drives the first driving pulley to rotate, which in turn drives the first driven pulley and the rotary joint to rotate, thereby realizing the rotation of the spherical shell; so that the first belt is in a slipping state and the second belt is in a tensioned state, the reversing motor drives the second driving pulley to rotate, which in turn drives the second driven pulley and the rotating shaft to rotate, thereby realizing the rotation of the gear.

[0014] Furthermore, the lifting mechanism also includes a retraction drive, which is used to drive the rack closer to or away from the gear; when the spherical housing rotates, it causes the rack to move away from the gear, thus preventing the gear and rack from damaging each other.

[0015] Furthermore, both the first and second stages include: a receiving platform for receiving the wafer; and an annular retaining ring that abuts against the edge of the wafer from top to bottom to fix the wafer on the receiving platform; wherein the annular retaining ring is linked with the first or second ejector pin and can rise and fall with the first or second ejector pin; when the annular retaining ring rises, the wafer to be etched can enter between the receiving platform and the annular retaining ring and be received by the first or second ejector pin; after the annular retaining ring falls, it can press the wafer against the receiving platform and expose the surface of the wafer in the inner ring of the annular retaining ring so that the wafer surface can be etched and stripped.

[0016] This application provides an integrated etching and resist removal cavity, including a working chamber, a flipping mechanism, an etching mechanism, and a resist removal mechanism. The flipping mechanism is rotatably suspended within the working chamber, dividing the inner cavity of the working chamber into an etching cavity and a resist removal cavity. The flipping mechanism includes a spherical shell, a first stage, a second stage, a flipping driver, and a lifting mechanism. The first and second stages are symmetrically arranged at both ends of the spherical shell. The flipping driver drives the spherical shell to rotate, exchanging the positions of the first and second stages. The lifting mechanism can cooperate with wafer loading equipment to transfer wafers between the first and second stages. This application, by integrating etching and resist removal functions into one cavity, reduces the number of wafer transfers and waiting time between different devices, solving the problem of... This invention addresses the problem of low efficiency in step-by-step operations. Etching and resist removal are performed continuously within the same cavity, eliminating the need to transfer wafers from one device to another, significantly shortening overall processing time and improving production efficiency. Furthermore, the integrated etching and resist removal cavity provided by this application has a compact structure, reducing equipment footprint and minimizing costs associated with site rental, equipment procurement, and maintenance, thus contributing to lower production costs. Additionally, the integrated etching and resist removal cavity eliminates the need for frequent wafer transfers; the wafer can complete both surface treatments within a single cavity. This reduction in transfer frequency lowers the risk of wafer damage, minimizing the possibility of damage from collisions, contamination, etc., during transfer, thereby improving product quality and yield. Attached Figure Description

[0017] Figure 1 A schematic diagram of an integrated etching and resist removal cavity provided in this application;

[0018] Figure 2 for Figure 1 The image shown is an enlarged view of a portion of the structure within the integrated etching and resist removal cavity.

[0019] Figure 3 for Figure 1 A schematic diagram of the first stage and related lifting mechanism in the etching and resist removal integrated cavity shown;

[0020] Figure 4 A schematic diagram of another integrated etching and resist removal cavity provided in this application;

[0021] Figure 5 This is a schematic diagram of another integrated etching and resist removal cavity provided in this application. Detailed Implementation

[0022] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0023] This application provides an integrated etching and resist removal cavity, comprising: a working chamber 100 for providing space for wafer processing; a flipping mechanism 200 rotatably suspended within the working chamber 100, dividing the inner cavity of the working chamber 100 into an etching cavity 101 and a resist removal cavity 102; an etching mechanism 310 for etching the wafer within the etching cavity 101; and a resist removal mechanism 320 for removing the resist from the wafer within the resist removal cavity 102.

[0024] For details, please refer to Figure 1 In the illustrated embodiment, the inner cavity of the working chamber 100 is roughly cylindrical, and the main body of the flipping mechanism 200 is roughly spherical. The flipping mechanism 200 is rotatably suspended in the middle of the working chamber 100 in a spherical tangent manner, and divides the inner cavity of the working chamber 100 into an upper etching cavity 101 and a lower adhesive removal cavity 102.

[0025] The etching mechanism 310 consists of a coil mounted on top of the etching chamber 101. The etching chamber 101 is provided with an air inlet and an air outlet. The air inlet is connected to the etching reaction gas supply equipment, and the air outlet is connected to the vacuum equipment.

[0026] During the etching process, the wafer is supported and fixed by a stage located within the etching chamber 101. A coil is energized, generating an electromagnetic field. The etching reaction gas enters the etching chamber 101 through the inlet and, under the influence of the electromagnetic field, is excited to form active plasma. This plasma can chemically react with the material on the wafer surface, thereby etching the wafer. Simultaneously, a vacuum pump removes unreacted gases and etching waste, facilitating control of the etching reaction rate and stability, and preventing excessively high or low pressure from affecting the etching effect. Removing the reaction waste ensures the relative stability of the gas composition within the chamber, providing a continuous and stable environment for the etching reaction.

[0027] The adhesive removal mechanism 320 adopts an RPS mechanism, which consists of an RF power supply, a matching network, and a plasma generator. The RF power supply provides energy, the matching network optimizes power transmission, and the plasma generator produces plasma within the adhesive removal chamber 102. The adhesive removal chamber 102 is also equipped with an inlet and an outlet. The inlet is connected to the adhesive removal reaction gas supply equipment, and the outlet is connected to the vacuum equipment.

[0028] The air intake and exhaust of the etching chamber 101 and the air intake and exhaust of the desizing chamber 102 are independent of each other and do not affect each other.

[0029] After etching, the flipping mechanism 200 rotates 180°, feeding the wafer into the photoresist removal chamber 102. The photoresist removal reaction gas enters the removal chamber 102 through the inlet. The radio frequency power supply in the RPS mechanism generates a high-frequency current, which is transmitted to the plasma generator through a matching network. Under the influence of a high-frequency electric field, the plasma generator ionizes the photoresist removal reaction gas, generating plasma. This plasma is highly reactive and can chemically react with the photoresist and other materials on the wafer surface, decomposing or vaporizing them, thereby achieving the photoresist removal purpose. Simultaneously, the vacuum equipment removes unreacted gases and waste generated during photoresist removal, preventing the accumulation of waste gas from affecting the removal effect, while maintaining stable gas pressure within the removal chamber to ensure the removal reaction proceeds under appropriate pressure conditions.

[0030] The flipping mechanism 200 includes: a spherical shell 210, the top and bottom surfaces of which are planar, and the circumferential surface connecting the top and bottom surfaces being spherical; a first stage 220 disposed on the top surface; and a second stage 230 disposed on the bottom surface. The first stage 220 and the second stage 230 are symmetrically arranged. When one of the first stage 220 and the second stage 230 is in the etching cavity 101, the other is in the resist removal cavity 102. Both the first and second platforms 220 and 230 employ electrostatic chucks; a flip driver is used to rotate the spherical housing 210 to exchange the positions of the first and second platforms 230; a lifting mechanism is located inside the spherical housing 210, and the lifting mechanism includes: a first ejector pin 241, through which the first platform 220 has a first through hole; and a second ejector pin 242, through which the second platform 230 has a second through hole. The wafer passes through a second perforation. A lifting driver is used to drive the first ejector pin 241 to move closer to or away from the first perforation and the second ejector pin 242 to move closer to or away from the second perforation. When the first stage 220 is located in the etching chamber 101, the lifting driver drives the first ejector pin 241 to rise, and the first ejector pin 241 can pass through the first perforation and receive the wafer. After obtaining the wafer, the lifting driver drives the first ejector pin 241 to fall so that the wafer can fall onto the first stage 220, and the first stage 220 can fix the wafer by electrostatic adsorption. After the wafer etching is completed, the flip driver drives the spherical housing 210 to rotate, so that the first stage 220 carries the wafer into the resist removal chamber 102, and the second stage 230 enters the etching chamber 101. The lifting driver drives the second ejector pin 242 to rise, and the second ejector pin 242 can pass through the second perforation and receive the wafer. At the same time, the wafer on the first stage 220 can undergo resist removal processing in the resist removal chamber 102.

[0031] For details, please refer to Figure 1 and Figure 2In the illustrated embodiment, the top and bottom surfaces of the spherical shell 210 are flat, and the circumferential surface is spherical. The circumferential surface is tangent to the inner wall of the working chamber 100. The spherical design of the circumferential surface helps the spherical shell 210 to rotate within the working chamber 100. The flat design of the top and bottom surfaces facilitates the installation of the platform and avoids directly adding the platform, increasing the outer diameter, and affecting the rotation.

[0032] Continue to refer to Figure 1 and Figure 2 The first stage 220 and the second stage 230 are symmetrically arranged and located on the top and bottom surfaces of the spherical shell 210, respectively. Both the first stage 220 and the second stage 230 are electrostatic chucks, which can fix the wafer by electrostatic adsorption to ensure the stability of the wafer position during processing.

[0033] Specifically, the electrostatic chuck contains electrodes. When these electrodes are energized, an electrostatic field is generated on the surface of the chuck. Wafers are typically made of semiconductor materials, possessing a certain degree of conductivity or polarizability. Under the influence of the electrostatic field, the wafer surface induces a charge opposite to that of the electrostatic chuck electrodes, thereby generating an electrostatic attraction between the wafer and the chuck. This firmly adheres the wafer to the stage surface, ensuring reliable and secure wafer adhesion even when the wafer is flipped or inverted.

[0034] The tilting actuator can be any drive component that can provide rotational power, such as a rotary cylinder or a motor. Figure 5 In the embodiment shown, the fixed end of the flip drive is located outside the working chamber 100 for easy installation and maintenance. The output end of the flip drive extends into the working chamber 100 via a rotating shaft and is connected to the spherical housing 210. It can drive the spherical housing 210 to rotate and flip while maintaining its vertical position, thereby swapping the positions of the first platform 220 and the second platform 230.

[0035] Combined with reference Figure 4 or Figure 5 In the illustrated embodiment, the first stage 220 is positioned above and located within the etching cavity 101, while the second stage 230 is inverted and positioned below and located within the resist removal cavity 102. The first stage 220 has three longitudinally penetrating first holes, each containing a first ejector pin 241. The three first holes are distributed along the three corners of an equilateral triangle. The second stage 230 has three longitudinally penetrating second holes, each containing a second ejector pin 242. The three second holes are also distributed along the three corners of an equilateral triangle.

[0036] The lifting driver can be any driving structure, such as a pneumatic cylinder or an electric cylinder, that can drive the first ejector pin 241 and the second ejector pin 242 to move vertically.

[0037] As is easily understood, the wafer is fed into the working chamber 100 by a wafer loading device (such as a robotic arm). To facilitate handover, the stage needs to be in an upright position. Therefore, the etching chamber 101 is positioned at the top to facilitate etching. The etching chamber 101 has a wafer inlet on one side. After the wafer loading device feeds the wafer to be processed into the etching chamber 101, the corresponding ejector pin rises, lifting the wafer away from the robotic arm. Once the robotic arm is withdrawn, the ejector pin descends, allowing the wafer to fall onto the stage, where it is held and fixed in place.

[0038] In one embodiment, the lifting mechanism includes two sets of lifting drivers, which are respectively connected to the first ejector pin 241 and the second ejector pin 242. In this case, the two sets of ejector pins can independently perform lifting and lowering movements as needed.

[0039] In another embodiment, the lifting mechanism includes only one set of lifting drivers. When the first stage 220 is located within the etching cavity 101, the lifting driver can drive the first ejector pin 241 to move up and down. When the second stage 230 is located within the etching cavity 101, the lifting driver can drive the second ejector pin 242 to move up and down. For example, the lifting driver includes a motor, a gear, and a rack. The rack extends vertically, and the first ejector pin 241 and the second ejector pin 242 are respectively located at both ends of the rack. The gear meshes with the rack, and the motor drives the gear to rotate. The gear can drive the rack to move closer to the first stage 220 and away from the second stage 230, or closer to the second stage 230 and away from the first stage 220. Since it is not necessary for both sets of ejector pins to work simultaneously, one set of lifting drivers can meet the working needs of both sets of ejector pins, thereby simplifying the drive structure, simplifying operation control, and reducing equipment costs.

[0040] This application does not limit the specific configuration of the lifting mechanism, as long as it can be used in conjunction with the wafer loading equipment to pick up and drop wafers onto the platform.

[0041] Taking the first stage 220 located within the etching cavity 101 as an example, in one specific embodiment, before etching, a lifting driver drives the first ejector pin 241 to rise, the first ejector pin 241 passes through the first through-hole and picks up the wafer; after picking up the wafer, the lifting driver drives the first ejector pin 241 to descend, the wafer falls onto the first stage 220, and the first stage 220 fixes the wafer by electrostatic adsorption; etching begins, etching reaction gas enters the etching cavity 101, the coil is energized, the etching reaction gas is ionized and plasma is generated, and the plasma bombards the wafer. The spherical wafer is etched. After etching, the flip driver drives the spherical housing 210 to rotate, so that the first stage 220 and the second stage 230 exchange positions. The first stage 220 carries the etched wafer into the photoresist removal chamber 102, while the second stage 230 enters the etching chamber 101. The second stage 230 can pick up a new wafer and repeat the above etching process. The photoresist removal mechanism 320 is activated, using the photoresist removal reaction gas to remove the photoresist and other substances from the surface of the wafer. In this way, the wafer can undergo etching and photoresist removal processes in succession within the working chamber 100.

[0042] In traditional wafer manufacturing processes, etching and resist stripping are typically performed separately on different equipment or at different times and locations, resulting in low production efficiency. This application integrates etching and resist stripping functions into a single cavity, reducing the number of wafer transfers and waiting time between different devices, thus solving the problem of low efficiency in separate operations. Etching and resist stripping are performed continuously within the same cavity, eliminating the need to transfer wafers from one device to another, significantly shortening overall processing time and improving production efficiency. Furthermore, the integrated etching and resist stripping cavity provided by this application has a compact structure, reducing equipment footprint and minimizing costs associated with site rental, equipment procurement, and maintenance, thereby reducing production costs. In addition, the integrated etching and resist stripping cavity provided by this application eliminates the need for frequent wafer transfers; the wafer can complete both surface treatments within a single cavity. The reduced number of transfers lowers the risk of wafer damage, minimizing the possibility of damage such as impacts and contamination during transfer, which helps improve product quality and yield.

[0043] Since different processes are carried out in the etching chamber 101 and the resist removal chamber 102, different reaction gases are required. If the gases in the two chambers are interconnected, the reaction gas for etching will mix with the reaction gas for resist removal, which will interfere with the normal progress of their respective processes. It will also make it difficult to maintain stable gas pressure in the two chambers. Gas pressure fluctuations may lead to unstable reaction rates, which can easily affect product quality.

[0044] Therefore, the etching and resist removal integrated cavity provided in this application also includes a sealing mechanism, which is located between the spherical shell 210 and the working chamber 100 to prevent gas from communicating between the etching cavity 101 and the resist removal cavity 102.

[0045] In one embodiment, the circumferential surface of the spherical shell 210 is tangent to the inner wall of the working chamber 100, and the tangent position is the connection position between the two; above and below the connection position, two sets of sealing rings are embedded on the circumferential surface of the spherical shell 210, and the sealing rings are close to the tangent line.

[0046] Under normal operating conditions, the spherical shell 210 is stationary, and the sealing ring is pressed between the spherical shell 210 and the working chamber 100. The sealing ring deforms and can compensate for the gap between the two, thus playing a sealing role.

[0047] Specifically, the sealing ring is made of a material with elasticity and chemical corrosion resistance, such as fluororubber or silicone rubber. The sealing ring is annular, and the outer circumference of the spherical housing 210 has a groove for installing the sealing ring. The size and shape of the groove are adapted to the sealing ring, allowing it to be securely accommodated. When the spherical housing 210 rotates, the sealing ring follows its movement until the spherical housing 210 rotates 180°. At this point, the sealing ring is again fully compressed between the spherical housing 210 and the working chamber 100. After being deformed by force, the sealing ring can tightly fit the spherical housing 210 and the working chamber 100, effectively blocking gas flow.

[0048] In another embodiment, a ring of mounting holes is provided on the outer surface of the spherical shell 210 and / or the inner wall of the working chamber 100; the mounting holes are located near the tangent position between the spherical shell 210 and the working chamber 100; the sealing mechanism includes an airbag and an air pump, the airbag is located in the mounting hole, and the air pump is used to inflate the airbag; before the spherical shell 210 rotates, the airbag deflates; after the spherical shell 210 rotates, the airbag inflates, which can both fasten the spherical shell 210 and the inner wall of the working chamber 100, and fill the gap and improve the sealing performance at the connection between the spherical shell 210 and the working chamber 100.

[0049] In another embodiment, an annular groove is provided on the inner wall of the working chamber 100; the sealing mechanism includes: a magnetic fluid 110, which fills the annular groove and can form a sealing liquid film under the action of a magnetic field; and an elastic sealing lip 120, which is arranged around the circumference of the spherical shell 210. Under normal working conditions, the spherical shell 210 is stationary, the elastic sealing lip 120 is in close contact with the sealing liquid film, and the magnetic fluid 110 and the elastic sealing lip 120 work together to achieve the sealing between the spherical shell 210 and the working chamber 100.

[0050] For details, please refer to Figure 4 In the illustrated embodiment, a ring-shaped groove is provided in the middle of the inner wall of the working chamber 100, and the ring-shaped groove is filled with magnetic fluid 110; the magnetic fluid 110 is located at the position where the spherical shell 210 is tangent to the inner wall of the working chamber 100. Therefore, under normal working conditions, the magnetic fluid 110 can cover the circumference of the spherical shell 210 at the part that is tangent to the working chamber 100.

[0051] Magnetofluid 110 is a novel functional material formed by uniformly dispersing nanoscale magnetic particles in a base liquid. It combines the fluidity of a liquid with the properties of a magnetic material. When there is no external magnetic field, it exhibits the state of an ordinary liquid. Under the influence of a magnetic field (such as by setting a coil outside an annular groove to generate a magnetic field), the magnetic particles will aggregate and align under the action of the magnetic force, thereby forming a sealed liquid film with a certain strength and stability.

[0052] Optionally, the output shaft of the flip drive is connected to the spherical housing 210 through the magnetic fluid 110. In this case, the magnetic fluid 110 can also seal the connection between the flip drive and the working chamber 100.

[0053] Continue to refer to Figure 4 The elastic sealing lip 120 is annularly disposed on the circumferential surface of the spherical housing 210 at the portion tangent to the working chamber 100. Under normal operating conditions, the elastic sealing lip 120 faces and is in close contact with the magnetorheological fluid 110.

[0054] The resilient sealing lip 120 is typically made of a material that is elastic, wear-resistant, and chemically resistant, such as fluororubber. The lip portion of the resilient sealing lip 120 has a smooth, rounded shape. This design reduces friction and scraping between it and the magnetofluid 110. When the spherical housing 210 rotates, the lip of the resilient sealing lip 120 can relatively smoothly scrape across the surface of the magnetofluid 110, reducing disturbance to the magnetofluid 110. Simultaneously, the elasticity of the lip provides a buffer when in contact with the magnetofluid 110, preventing excessively abrupt contact that could disturb the magnetofluid 110.

[0055] Specifically, when an external magnetic field is applied to the annular groove filled with magnetorheological fluid 110, the magnetic particles in the magnetorheological fluid are subjected to the magnetic force and align along the direction of the magnetic field lines, forming a sealing liquid film similar to a "liquid barrier". Due to the fluidity of the magnetorheological fluid 110, this sealing liquid film can adapt to the surface shape of the spherical shell 210 and the elastic sealing lip 120. Even if there are certain processing errors in the spherical shell 210 or the elastic sealing lip 120, or if there is slight shaking during operation, the sealing liquid film can always maintain close contact with the spherical shell 210 and the elastic sealing lip 120, effectively preventing gas from communicating between the etching cavity 101 and the adhesive removal cavity 102.

[0056] The elastic sealing lip 120 achieves auxiliary sealing through its own elastic properties. Under normal operating conditions, the spherical shell 210 is stationary, and the elastic sealing lip 120 is tightly attached to the sealing fluid film formed by the magnetohydrodynamic fluid 110. The sealing fluid film provides a basic sealing interface for the elastic sealing lip 120. When the sealing fluid film is affected by external factors, such as changes in gas pressure or minor displacements of the spherical shell 210, the elastic sealing lip 120 can adapt to these changes through its own elastic deformation, thereby maintaining the integrity of the seal. The elasticity of the elastic sealing lip 120 allows it to fill any minor gaps or unevenness in the sealing fluid film. During equipment operation, even if the sealing fluid film is slightly disturbed, the elastic sealing lip 120 can maintain a tight fit with the sealing fluid film through its own elastic deformation, further improving the reliability of the seal and preventing gas leakage.

[0057] In practical applications, on the one hand, mechanical vibration, external forces generated by equipment operation, or a large pressure difference between the two sides of the seal may cause the magnetic fluid 110 to overflow from the groove, resulting in seal failure. On the other hand, when the spherical shell 210 rotates, it may drive the surrounding fluid to flow, causing disturbance to the magnetic fluid 110.

[0058] Therefore, a baffle with numerous small holes can be provided at the opening of the annular groove near the spherical shell 210. The baffle can restrict the excessive flow of the magnetic fluid 110 and prevent it from overflowing out of the groove, while also allowing the magnetic fluid 110 to remain connected to the spherical shell 210 through the small holes under the action of the magnetic field, thus maintaining the sealing function.

[0059] Alternatively, a stronger electromagnetic coil can be fitted outside the annular groove. This electromagnetic coil can generate a stronger and more uniform magnetic field, causing the magnetic particles in the magnetofluid 110 to be more magnetically bound, thereby reducing the likelihood that the magnetofluid 110 will rotate with the spherical shell 210. Simultaneously, patches made of materials with high magnetic permeability can be arranged inside the annular groove to enhance the magnetic field concentration effect.

[0060] Alternatively, the annular groove can be designed in a special shape, such as a trapezoid, so that the magnetorheological fluid 110 forms a wedge-like shape within the groove, increasing the resistance to its outflow. Protrusions or partitions can also be provided within the annular groove to restrict the flow path of the magnetorheological fluid 110 and prevent it from moving freely as it rotates with the spherical shell 210.

[0061] Optionally, the spherical shell 210 is made of a non-magnetic material, such as stainless steel or ceramic, which can avoid interfering with the magnetic field and facilitate the normal operation of the magnetofluid 110 under the action of the magnetic field.

[0062] Optionally, the resilient sealing lip 120 is made of perfluororubber (FFKM).

[0063] Perfluororubber exhibits excellent chemical corrosion resistance, effectively resisting the erosion of seals by chemical substances and ensuring long-term stable operation. Perfluororubber maintains good performance over a wide temperature range, withstanding high-temperature environments without significant performance degradation, while also retaining a certain degree of elasticity at low temperatures to adapt to temperature variations within the working chamber caused by different processes. Due to its stable chemical properties, perfluororubber has good compatibility with the magnetic fluid 110, without undergoing chemical reactions or swelling, thus ensuring the overall performance of the sealing mechanism remains unaffected. Perfluororubber also possesses good elasticity, allowing it to tightly conform to the inner wall of the working chamber 100 and the surface of the spherical shell 210, and has a certain degree of wear resistance, meeting the requirements of the seal during the rotation of the spherical shell 210.

[0064] Optionally, the width of the elastic sealing lip 120 is greater than the width of the sealing liquid film, and under normal operating conditions, the elastic sealing lip 120 can completely cover the sealing liquid film.

[0065] Thus, the resilient sealing lip 120 not only covers the area where the magnetofluid 110 is located, but also extends to the upper and lower sides of the annular groove opening and adheres to part of the inner wall of the working chamber 100. At this point, the resilient sealing lip 120 can block the leakage path of the magnetofluid 110, forming a more reliable sealing barrier. Even if the sealing liquid film experiences localized failure or weakness in certain situations, the resilient sealing lip 120 can still provide an effective seal.

[0066] This application does not limit the specific configuration of the sealing mechanism.

[0067] A reliable sealing mechanism can prevent cross-contamination of gases and maintain stable internal gas pressure, allowing for more precise and stable etching and resist removal processes. This reduces product defects caused by gas interference and pressure fluctuations, improving wafer processing quality and yield. Stable gas environment and pressure conditions also help reduce corrosion and damage to equipment components, extending the service life of components such as the etching mechanism 310, resist removal mechanism 320, and working chamber 100, thus reducing equipment maintenance costs.

[0068] In one embodiment, the working chamber 100 has only one wafer inlet, which is connected to the etching cavity 101.

[0069] In this embodiment, the wafer to be processed enters the etching chamber 101 through the wafer inlet. After etching is completed, the wafer is flipped and enters the resist removal chamber 102. After resist removal is completed, the wafer is flipped again, so that the wafer returns to the etching chamber 101 and then returns through the wafer inlet to leave the working chamber 100.

[0070] In another embodiment, the upper part of the working chamber 100 is provided with a first wafer inlet and the lower part is provided with a second wafer inlet. The first wafer inlet is connected to the etching chamber 101 and the second wafer inlet is connected to the resist removal chamber 102. The wafer to be etched can enter the working chamber 100 through the first wafer inlet. The wafer that has completed etching and resist removal can leave the working chamber 100 through the second wafer inlet.

[0071] In this embodiment, the working chamber 100 is provided with two wafer inlets, wherein the first wafer inlet is used as a wafer import port and the second wafer inlet is used as a wafer export port. During wafer processing, the wafer loading device delivers the wafer to be processed into the etching chamber 101 through the first wafer inlet. The lifting mechanism operates to place the wafer on the stage so that the wafer can be etched. After etching is completed, the flip driver is activated to exchange the stage positions, so that the etched wafer enters the resist removal chamber 102 so that the wafer can be removed. After resist removal is completed, the wafer unloading device can enter the resist removal chamber 102 through the second wafer inlet and remove the processed wafer.

[0072] It should be added that the wafer loading equipment and the wafer unloading equipment can be the same set of structures for convenient wafer loading and unloading, or they can be two different sets of structures used for delivering wafers and removing wafers respectively.

[0073] The design incorporates two independent wafer inlets, one for wafer entry and the other for wafer exit, clearly defining the wafer's path and preventing transport confusion. This clear wafer entry / exit channel, along with the effective coordination between external loading / unloading equipment and internal mechanisms, reduces wafer waiting time and operational errors during transport, facilitating efficient operation of the etching and resist removal processes and increasing the number of wafers processed per unit time. The continuous operation of wafer loading, etching, resist removal, and unloading ensures the continuity of the processing flow; this efficient production process also reduces equipment downtime, increases equipment utilization, and further lowers production costs.

[0074] Optionally, the upper part of the working chamber 100 is provided with a first air inlet and a first air outlet, through which the etching reaction gas can enter the etching chamber 101 through the first air inlet and exit the etching chamber 101 through the first air outlet; the lower part of the working chamber 100 is provided with a second air inlet and a second air outlet, through which the resist removal reaction gas can enter the resist removal chamber 102 through the second air inlet and exit the resist removal chamber 102 through the second air outlet; the first air outlet and the second air outlet are located near the connection position between the spherical shell 210 and the working chamber 100.

[0075] For details, please refer to Figure 1 and Figure 2In the illustrated embodiment, the etching chamber 101 is provided with a first air inlet and a first air outlet. The first air inlet is connected to the etching reaction gas supply equipment, and the first air outlet is connected to the first vacuum pumping equipment 410. The first air outlet and the first vacuum pumping equipment 410 are located on the left side of the working chamber 100, near the connection position between the spherical shell 210 and the working chamber 100, and at the upper left of the connection position.

[0076] The etching reaction gas enters the etching chamber 101 through the first inlet and is ionized within the etching chamber 101, thereby etching the wafer. During the etching process, the first vacuum pump 410 operates, and unreacted gas, waste gas generated by the reaction, impurities, etc., can be discharged from the etching chamber 101 through the first outlet under the action of pressure difference.

[0077] For further reference Figure 1 and Figure 2 The degumming chamber 102 is equipped with a second air inlet and a second air outlet. The second air inlet is connected to the degumming reaction gas supply equipment, and the second air outlet is connected to the second vacuum pumping device 420. The second air outlet and the second vacuum pumping device 420 are also located on the left side of the working chamber 100, near the connection position between the spherical shell 210 and the working chamber 100, and at the lower left of the connection position. The first air outlet is adjacent to the second air outlet.

[0078] The reactive gas for resist removal enters the resist removal chamber 102 through the second air inlet and reacts with the photoresist and other substances on the etched wafer surface inside the chamber 102, thereby removing the resist from the wafer. During the resist removal process, the second vacuum pump 420 operates, and unreacted gases and volatile impurities generated during the reaction are discharged from the resist removal chamber 102 through the second air outlet under the action of the pressure difference.

[0079] By placing the two air outlets near the connection between the spherical shell 210 and the working chamber 100, on the one hand, the flow characteristics of the gas inside the chamber can be utilized to promote the rapid discharge of reaction products such as waste gas and impurities, avoiding interference with the etching or resist removal process inside the chamber; on the other hand, it can prevent different reaction gases from crossing between the two chambers.

[0080] It is easy to understand that at the connection point between the spherical shell 210 and the working chamber 100, due to relative movement (rotation of the spherical shell 210), gas leakage is likely to occur, leading to gas communication between the two chambers. By placing the first and second air outlets near this location, the characteristics of gas flow can be utilized to allow the gas inside the chamber to be preferentially discharged from the air outlets.

[0081] For example, when the gas in the etching chamber 101 leaks downward toward the desizing chamber 102, the gas tends to be discharged from the first vent rather than flow into the desizing chamber 102 because the first vent is close to the leakage location.

[0082] Therefore, placing the two vents near the connection between the spherical shell 210 and the working chamber 100 effectively creates a "gas drainage channel" at a location prone to leakage, significantly reducing the possibility of gas exchange between the two chambers due to leakage. By preventing gas exchange, the independence and stability of the gas environment in each chamber can be ensured, allowing etching and resist removal processes to proceed under stable conditions. This promotes process stability and ultimately guarantees wafer processing quality.

[0083] Optionally, the etching and resist removal integrated cavity provided in this application further includes a temperature control mechanism, which is used to regulate the temperature of the first stage 220 and the second stage 230. The temperature control mechanism can cool down the first stage 220 or the second stage 230 in the etching cavity 101, and can heat up the second stage 230 or the first stage 220 in the resist removal cavity 102.

[0084] It's important to explain that etching reactions are typically accompanied by heat generation, causing the wafer and substrate to heat up. Excessively high temperatures can negatively impact etching. On one hand, increased temperature accelerates the chemical reaction rate, making the etching process difficult to control precisely, potentially leading to over-etching or uneven etching, affecting the wafer's processing accuracy and quality. On the other hand, high temperatures may affect the wafer's material properties, such as altering the electrical properties of semiconductor materials, thus reducing product performance and reliability.

[0085] Therefore, cooling the stage within the etching cavity 101 can effectively control the etching reaction rate, ensure the stability and accuracy of the etching process, and improve the etching quality of the wafer.

[0086] During resist stripping, the reactive gases used in the stripping process chemically react with the photoresist and other substances on the wafer surface. Increasing the temperature accelerates these reactions, making the stripping process more efficient. This is because, within a certain temperature range, the higher the temperature, the stronger the reactivity of the photoresist and other substances with the stripping agent, and the faster the stripping speed. Furthermore, appropriate heating can improve the fluidity and penetration of the stripping agent, allowing it to better contact the photoresist and further enhance the stripping effect. In some stripping processes, heating can also promote the volatilization of reaction products, facilitating their removal and thus improving the thoroughness of the stripping process.

[0087] Therefore, heating the stage inside the degumming chamber 102 can effectively improve degumming efficiency and optimize degumming effect.

[0088] In one embodiment, the temperature control mechanism employs a semiconductor refrigeration and heating module.

[0089] Specifically, both the first stage 220 and the second stage 230 are equipped with multiple semiconductor cooling and heating modules. These modules are composed of P-type and N-type semiconductors and are connected together in series or parallel to form a temperature control array. Each module is equipped with an independent power control circuit to precisely control its cooling or heating state. Temperature sensors are also installed on the stages to monitor the stage temperature in real time and feed the temperature data back to the control system.

[0090] According to the Peltier effect, when direct current passes through a module composed of P-type and N-type semiconductors, a temperature difference is generated across the module. During the etching stage, the control system supplies a current in a suitable direction to the semiconductor cooling / heating module located on the stage within the etching chamber 101, causing the cold side of the module to contact the stage and absorb heat from the stage and wafer, thus achieving cooling. During the resist removal stage, the current direction is changed, causing the hot side of the module to contact the stage, transferring heat to the stage, thus achieving heating. A temperature sensor monitors the stage temperature in real time and feeds the data back to the control system. The control system adjusts the current magnitude and direction according to the set temperature value to precisely control the stage temperature.

[0091] The semiconductor cooling and heating module offers fast temperature control response and high temperature control precision, enabling rapid and accurate regulation of the stage temperature to improve the stability and reliability of etching and resist removal processes. Precise temperature control also reduces etching and resist removal quality issues caused by temperature fluctuations, thus improving product yield. Furthermore, the semiconductor cooling and heating module has a compact structure, does not occupy excessive space, and contributes to equipment miniaturization.

[0092] This application does not limit the specific configuration of the temperature control mechanism.

[0093] In one specific embodiment, both the first stage 220 and the second stage 230 are provided with a temperature control channel 223; the temperature control mechanism includes a heating pipe and a cooling pipe; when the first stage 220 or the second stage 230 is in the etching chamber 101, the cooling pipe is connected to the temperature control channel 223, and the coolant can enter the temperature control channel 223 through the cooling pipe, thereby cooling the first stage 220 or the second stage 230; when the first stage 220 or the second stage 230 is in the desizing chamber 102, the heating pipe is connected to the temperature control channel 223, and the heating agent can enter the temperature control channel 223 through the heating pipe, thereby heating the first stage 220 or the second stage 230.

[0094] Optionally, liquid gallium can be used as the coolant.

[0095] The cooling system mainly consists of a temperature-controlled flow channel 223, a cooling pipe, a storage tank, and a circulation pump. The storage tank stores liquid gallium and is equipped with a temperature regulating device to maintain the liquid gallium at a suitable low temperature. The cooling pipe connects the storage tank and the temperature-controlled flow channel 223, and the circulation pump drives the liquid gallium to circulate within the cooling system. During the etching process, the circulation pump operates, pumping the low-temperature liquid gallium from the storage tank into the temperature-controlled flow channel 223 through the cooling pipe. Liquid gallium has excellent thermal conductivity; as it flows through the temperature-controlled flow channel 223, it rapidly absorbs the heat generated by the etching reaction on the stage, causing its own temperature to rise. The heated liquid gallium then flows back to the storage tank through the cooling pipe, where it is cooled by the temperature regulating device before re-entering the circulation. The continuous flow of low-temperature liquid gallium achieves continuous cooling of the stage.

[0096] Optionally, the temperature control channel 223 is configured with a meandering pipe structure to increase the contact area and contact time between the coolant and the platform, thereby improving the heat exchange efficiency.

[0097] When the coolant (such as liquid gallium or other high-efficiency coolants) flows within the temperature-controlled channel 223, the larger contact area means that the coolant can more fully absorb the heat generated by the etching reaction on the stage; the extended flow path also allows the coolant to remain in the stage for a longer time, thereby enhancing the heat exchange effect. The coolant enters one end of the temperature-controlled channel 223 from the cooling supply pipe, flows slowly along the meandering pipe, continuously absorbing heat from the stage during its flow, until it flows out from the other end of the temperature-controlled channel 223, and then flows back to the storage tank through the cooling supply pipe for cooling and reuse. In this process, the temperature-controlled channel 223 acts like a high-efficiency heat collector, continuously transferring excess heat from the stage to the coolant, ensuring that the stage temperature is always maintained at the low level required by the etching process, thereby ensuring the stability and accuracy of the etching process and improving the etching quality.

[0098] Optionally, supercritical carbon dioxide can be used as the heating agent.

[0099] The heating system consists of a heating pipe, a temperature-controlled flow channel 223, a high-pressure storage tank, a compressor, and a heat exchanger. The high-pressure storage tank stores supercritical carbon dioxide. The heating pipe connects the high-pressure storage tank and the temperature-controlled flow channel 223. The compressor, installed on the heating pipe, pressurizes the supercritical carbon dioxide to maintain it in a supercritical state. The heat exchanger can adjust the temperature of the supercritical carbon dioxide as needed during the circulation process. During the degumming process, the compressor starts, pressing the supercritical carbon dioxide from the high-pressure storage tank into the temperature-controlled flow channel 223 through the heating pipe. Supercritical carbon dioxide has unique physical properties; its density is close to that of a liquid, allowing it to carry a large amount of heat, and its diffusion coefficient is close to that of a gas, resulting in high heat and mass transfer efficiency. In the temperature-controlled flow channel 223, the supercritical carbon dioxide transfers its own heat to the platform, achieving heating. After cooling, the supercritical carbon dioxide flows back to the heat exchanger through the heating pipe, absorbs heat in the heat exchanger to reheat, and then returns to the high-pressure storage tank, ready to participate in the circulation again. The continuous flow of supercritical carbon dioxide achieves continuous heating of the platform.

[0100] Optionally, the temperature control channel 223 is distributed in a fine mesh pattern within the stage, which can increase the contact area between the heating agent and the stage.

[0101] When the heating agent (such as the aforementioned supercritical carbon dioxide or other highly efficient heating agents) flows within the temperature-controlled flow channel 223, the increased contact area and longer flow path allow the heat carried by the heating agent to be transferred to the stage more evenly and fully. This enables the stage to heat up rapidly and uniformly, thereby meeting the temperature requirements of the photoresist stripping process. Uniform heating is crucial for the photoresist stripping effect, as it allows the reactive gases used for stripping to react more fully with the photoresist and other substances on the wafer surface, accelerating the stripping speed, improving the thoroughness of stripping, and ultimately enhancing product quality.

[0102] In one embodiment, the flipping mechanism 200 further includes a rotary joint 251, and the spherical shell 210 is rotatably connected to the working chamber 100 through the rotary joint 251. The rotary joint 251 is a tubular hollow structure. The first platform 220 and the second platform 230 are each provided with two sets of temperature-controlled flow channels 223, one set of temperature-controlled flow channels 223 is used for coolant flow, and the other set of temperature-controlled flow channels 223 is used for heating flow. The two sets of temperature-controlled flow channels 223 are respectively connected to a set of heating pipe and a set of cooling pipe. The heating pipe and the cooling pipe are flexible hoses, and the flexible hoses can extend into the spherical shell 210 through the rotary joint 251 to communicate with the corresponding temperature-controlled flow channels 223.

[0103] In this embodiment, since the rotary joint 251 is the rotating shaft of the spherical shell 210, the hose is fixedly connected to the rotary joint 251. When the rotary joint 251 and the spherical shell 210 rotate synchronously, the rotational motion will not affect the connection between the hose and the temperature control channel 223, and the coolant and heating agent can flow smoothly as needed.

[0104] In another embodiment, the flipping mechanism 200 further includes a rotary joint 251. The spherical shell 210 is rotatably connected to the working chamber 100 through the rotary joint 251, which is a tubular hollow structure. Both the heating pipe and the cooling pipe extend into the spherical shell 210 through the rotary joint 251. Each of the first platform 220 and the second platform 230 is provided with only one set of temperature-controlled channels 223. A first sealing joint is provided at the inlet and outlet of the temperature-controlled channel 223. The first sealing joint is made of a corrosion-resistant and high-temperature resistant metal material (such as stainless steel). A magnetic sealing ring is provided on the inner wall of the first sealing joint. The magnetic sealing ring is made of a magnetic material with certain elasticity and sealing performance, such as magnetic rubber or magnetic silicone. A second sealing joint is provided at the end of the cooling pipe and the heating pipe that connects to the temperature-controlled channel 223. A slidable magnetic outer ring is fitted on the second sealing joint. The magnetic outer ring is made of a magnetic material that can attract the magnetic sealing ring. The inner diameter of the magnetic outer ring is slightly larger than the outer diameter of the second sealing joint, and the magnetic outer ring can slide on the second sealing joint. The rotary joint 251 is equipped with a fixed mounting bracket, which is rotatably mounted inside the rotary joint 251 via bearings. The cooling pipe and heating pipe are mounted on the fixed mounting bracket. When the rotary joint 251 drives the spherical housing 210 to rotate, the positions of the cooling pipe and heating pipe remain unchanged; the cooling pipe always points towards the etching chamber 101, and the heating pipe always points towards the adhesive removal chamber 102. The cooling pipe and heating pipe are connected to a displacement actuator, which can be any drive structure, such as a cylinder or electric cylinder, capable of driving the cooling pipe and heating pipe closer to or further away from the temperature control channel 223.

[0105] When the spherical shell 210 needs to rotate, the displacement actuator drives the cooling pipe and heating pipe away from the temperature control channel 223. During the movement, the magnetic outer ring gradually moves away from the magnetic sealing ring, and the magnetic force between the two gradually weakens until the first sealing joint and the second sealing joint are completely separated. At this time, the cooling pipe and heating pipe are disconnected from the temperature control channel 223, which can prevent the pipe from twisting or being damaged during the rotation of the spherical shell 210.

[0106] After the spherical shell 210 rotates into position, the displacement actuator drives the cooling pipe and heating pipe closer to the temperature control channel 223. As the first and second sealing joints gradually approach each other, the magnetic force between the magnetic outer ring and the magnetic sealing ring gradually increases, eventually tightly attracting the first and second sealing joints together to achieve a sealed connection. At this time, the coolant or heating agent can flow smoothly between the cooling pipe, heating pipe, and temperature control channel 223 through the two sets of sealing joints to achieve cooling or heating of the stage.

[0107] Optionally, the lifting driver includes: a gear 243 and a rack 244, the rack 244 being disposed between the first ejector pin 241 and the second ejector pin 242. When the gear 243 meshes with the rack 244, the gear 243 rotates, and the rack 244 can lift the first ejector pin 241 or the second ejector pin 242 under the transmission of the gear 243; a first mounting plate 245, on which a plurality of first ejector pins 241 are provided; a second mounting plate 246, on which a plurality of second ejector pins 242 are provided; and a first elastic element 247. One end is connected to the first mounting plate 245, and the other end is connected to the inner top surface of the spherical shell 210; the second elastic element 248 has one end connected to the second mounting plate 246 and the other end connected to the inner bottom surface of the spherical shell 210; when the rack 244 lifts the first mounting plate 245 or the second mounting plate 246, the first elastic element 247 or the second elastic element 248 can both adapt to deformation and ensure that the first mounting plate 245 and the second mounting plate 246 remain stable after the rack 244 is separated from the first mounting plate 245 or the second mounting plate 246.

[0108] Increasing the number of first ejector pins 241 and second ejector pins 242 helps them stably hold the wafer. A first mounting plate 245 is provided to facilitate the installation of multiple first ejector pins 241; a second mounting plate 246 is provided to facilitate the installation of multiple second ejector pins 242.

[0109] For details, please refer to Figure 2 or Figure 5 In the illustrated embodiment, the first mounting plate 245 is suspended on the inner top surface of the spherical shell 210 by the first elastic member 247, and the second mounting plate 246 is supported by the second elastic member 248 and suspended above the inner bottom surface of the spherical shell 210. The first elastic member 247 and the second elastic member 248 can be made of elastic materials (such as rubber, plastic, etc.), or can be configured as elastic structures such as springs or sheet springs. Because the first elastic element 247 and the second elastic element 248 have elastic properties, when the stage is on top, the mounting plate corresponding to the stage can be suspended below it. The rack 244 can rise to push the mounting plate and the ejector pins on it to pick up the wafer. When the stage is on the bottom, the mounting plate corresponding to the stage can be kept above it. If necessary, the rack 244 can descend to push the mounting plate and the ejector pins on it so that the ejector pins can push the wafer away to facilitate wafer unloading. When the stage rotates with the spherical shell 210, the elastic element can also drive the mounting plate connected to it to ensure that the mounting plate can move with the stage.

[0110] Continue to refer to Figure 2 or Figure 5The rack 244 is positioned between the first mounting plate 245 and the second mounting plate 246. To limit the direction of movement of the rack 244 and ensure that the rack 244 can accurately lift the ejector pin, a vertically extending guide is provided on one side of the rack 244. The guide is fixedly mounted on the first mounting plate 245 or the second mounting plate 246, and the rack 244 is slidably mounted on the guide. The direction of movement of the rack 244 is limited by the guide. After the two sets of platforms are rotated into position, the rack 244 can only move vertically upward or downward.

[0111] When the rack 244 lifts the mounting plate, the first elastic element 247 or the second elastic element 248 connected to the mounting plate will be compressed and deformed adaptively, storing elastic potential energy. This not only buffers the impact force during the lifting process, protecting the ejector pin and the mounting plate, but also, after the rack 244 detaches from the mounting plate, uses the stored elastic potential energy to keep the first mounting plate 245 and the second mounting plate 246 stable, preventing the mounting plate from shaking due to inertia or other external forces, and ensuring the positional accuracy of the ejector pin.

[0112] Through meshing transmission, the rotational motion of gear 243 can be precisely converted into the linear motion of rack 244, thereby accurately controlling the lifting height of the first ejector pin 241 and the second ejector pin 242. By controlling the rotation angle and speed of gear 243, precise adjustment of the ejector pin lifting height and speed can be achieved to meet the requirements of different processes for wafer pick-up and placement.

[0113] The gear 243 and rack 244 work together to enable the lifting drive to meet the lifting needs of two sets of mounting plates in a single-drive configuration. The structure is simple, easy to control, and low in cost.

[0114] In one embodiment, the lifting driver further includes a rotary drive component (such as a rotary cylinder, motor, etc.), which is fixedly mounted on one of the first mounting plate 245 and the second mounting plate 246, and is used to drive the gear 243 to rotate. When the gear 243 meshes with the rack 244, the rotation of the gear 243 can drive the rack 244 to move along the guide.

[0115] In another embodiment, the flipping driver can drive both the spherical housing 210 and the gear 243 to rotate; the flipping driver includes a flipping motor 261, on which a first driving wheel 262 and a second driving wheel 263 are spaced apart; the flipping mechanism 200 further includes: a rotary joint 251, through which the spherical housing 210 is rotatably connected to the working chamber 100, the rotary joint being a tubular hollow structure; a rotating shaft 252, passing through the rotary joint 251, on which the gear 243 is mounted; a first driven wheel 253, sleeved on the rotary joint 251 and linked to the first driving wheel 262 via a first belt; a second driven wheel 254, sleeved on the rotating shaft 252 and linked to the second driving wheel 263 via a second belt; and a first tensioning wheel, capable of cooperating with the first driving wheel 262 and the first driven wheel 253. The first belt is tensioned; a second tensioning pulley, which can cooperate with the second driving pulley 263 and the second driven pulley 254 to tension the second belt; a first driving member is used to drive the first tensioning pulley closer to or away from the first belt to change the tension state of the first belt; a second driving member is used to drive the second tensioning pulley closer to or away from the second belt to change the tension state of the second belt; so that the second belt is in a slipping state and the first belt is in a tensioned state, the flip motor 261 drives the first driving pulley 262 to rotate, which can drive the first driven pulley 253 and the rotary joint 251 to rotate through the first belt, thereby realizing the rotation of the spherical shell 210; so that the first belt is in a slipping state and the second belt is in a tensioned state, the flip motor 261 drives the second driving pulley 263 to rotate, which can drive the second driven pulley 254 and the rotating shaft 252 to rotate through the second belt, thereby realizing the rotation of the gear 243.

[0116] For details, please refer to Figure 5 In the illustrated embodiment, the rotary joint 251 is configured as a hollow tube and is a key component for the rotatable connection between the spherical housing 210 and the working chamber 100. It not only provides support for the rotation of the spherical housing 210, but also ensures that cables, pipes, etc. passing through it are not affected by the rotation, so as to achieve a stable and safe external connection for the components inside the spherical housing 210.

[0117] Continue to refer to Figure 5 The rotating shaft 252 is rotatably mounted in the rotary joint 251 via bearings, and the gear 243 is mounted on the rotating shaft 252, which can drive the gear 243 to rotate. If necessary, the rotating shaft 252 can also be configured as a hollow tube to facilitate the external connection of cables, pipes, etc. inside the spherical housing 210.

[0118] Continue to refer to Figure 5A tilting motor 261 is located outside the working chamber 100. A first driving wheel 262 and a second driving wheel 263 are spaced apart on the output shaft of the tilting motor 261. The first driving wheel 262 is linked to a first driven wheel 253 via a first belt; the second driving wheel 263 is linked to a second driven wheel 254 via a second belt. The first driven wheel 253 is fitted onto a rotary joint 251, enabling the rotary joint 251 to rotate, thereby rotating the spherical housing 210 and exchanging the positions of the first platform 220 and the second platform 230. The second driven wheel 254 is fitted onto a rotating shaft 252. The left end of the rotating shaft 252 is inserted into the spherical housing 210 via the rotary joint 251 and connected to a gear 243, enabling the gear 243 to rotate, thereby lifting the mounting plate mounted on it using a rack 244.

[0119] The first tension pulley is located inside the loop of the first belt and can cooperate with the first driving pulley 262 and the first driven pulley 253 to tension the first belt. The second tension pulley is located inside the loop of the second belt and can cooperate with the second driving pulley 263 and the second driven pulley 254 to tension the second belt.

[0120] The first and second driving components can be linear drive components such as cylinders or electric cylinders, which are used to control the first and second tension pulleys to move closer to or further away from the belt, thereby adjusting the belt tension.

[0121] When the spherical shell 210 needs to rotate, the first driving member drives the first tensioning wheel to abut against the first belt, so that the first belt is in a taut state. At the same time, the second driving member drives the second tensioning wheel away from the second belt, so that the second belt is in a slippery state. The flipping motor 261 starts, driving the first driving wheel 262 to rotate (the first driving wheel 262 and the second driving wheel 263 are coaxially set and will rotate synchronously, but because the second belt is in a slippery state, the rotation of the second driving wheel 263 will not have any effect). The first driving wheel 262 drives the first driven wheel 253 to rotate through the taut first belt, and then the first driven wheel 253 drives the rotary joint 251 and the spherical shell 210 to rotate, finally exchanging the positions of the first platform 220 and the second platform 230.

[0122] After the platform is in place, the spherical shell 210 needs to be stationary and the gear 243 needs to rotate. The second driving member drives the second tensioning wheel to abut against the second belt, so that the second belt is in a taut state. At the same time, the first driving member drives the first tensioning wheel away from the first belt, so that the first belt is in a slipping state. The flipping motor 261 drives the second driving wheel 263 to rotate. The second driving wheel 263 drives the second driven wheel 254 to rotate through the taut second belt. Then, the second driven wheel 254 drives the rotating shaft 252 to rotate, ultimately realizing the rotation of the gear 243. The linkage between the gear 243 and the rack 244 realizes the lifting and lowering of the ejector pin.

[0123] Traditional drive methods require separate motors to rotate the spherical housing 210 and the gear 243, resulting in a large footprint, complex structure, and high cost. This application achieves the drive of two key components through a single flip motor 261 and a clever transmission structure, simplifying the equipment structure, reducing the number of motors and internal wiring and installation space, making the equipment more compact, and thus reducing production costs.

[0124] Optionally, the lifting mechanism also includes a retraction drive 249, which drives the rack 244 to move closer to or away from the gear 243; when the spherical housing 210 rotates, it causes the rack 244 to move away from the gear 243, thus preventing the gear 243 and the rack 244 from damaging each other.

[0125] For details, please refer to Figure 2 In the illustrated embodiment, the avoidance drive component 249 can be a linear drive component such as a cylinder or an electric cylinder. The avoidance drive component 249 is fixedly mounted on the first mounting plate 245 or the second mounting plate 246 and located on one side of the gear 243. The avoidance drive component 249 is connected to the rack 244 through a guide component, which can drive the rack 244 to move closer to or away from the gear 243 without affecting the rack 244's lifting and lowering movement.

[0126] Before the spherical housing 210 rotates, the rack 244 is driven away from the gear 243 by the avoidance drive 249, so that the two are disengaged and the rack 244 is not displaced and damages the gear 243.

[0127] When the lifting mechanism also avoids the drive member 249, the above-mentioned implementation of the flipping drive that can drive both the spherical housing 210 and the gear 243 to rotate can omit the second drive member. At this time, the second belt is always in a taut state, and the avoidance drive member 249 can be used to select whether to use the rotating gear 243 to brake the rack 244 as needed, without worrying about the rotation of the spherical housing 210 and the rotation of the gear 243 interfering with each other.

[0128] Optionally, both the first stage 220 and the second stage 230 include: a receiving platform 221 for receiving wafers; and an annular retaining ring 222 that can abut against the edge of the wafer from top to bottom to fix the wafer on the receiving platform 221. The annular retaining ring 222 is linked with the first ejector pin 241 or the second ejector pin 242 and can rise and fall with the first ejector pin 241 or the second ejector pin 242. When the annular retaining ring 222 rises, the wafer to be etched can enter between the receiving platform 221 and the annular retaining ring 222 and be received by the first ejector pin 241 or the second ejector pin 242. After the annular retaining ring 222 falls, it can press the wafer against the receiving platform 221 and expose the surface of the wafer in the inner ring of the annular retaining ring 222 so that the wafer surface can be etched and stripped.

[0129] For details, please refer to Figure 3 In the illustrated embodiment, the receiving platform 221 is generally flattened cylindrical, and a raised frustum is provided at the center of the receiving platform 221 for receiving the wafer. A temperature-controlled flow channel 223 is provided inside the receiving platform 221.

[0130] Continue to refer to Figure 3 The annular pressure ring 222 is roughly circular in shape. The upper part of the inner ring is provided with a pressure block that protrudes towards the receiving platform 221. When the annular pressure ring 222 fixes the wafer, its main body will fall outside the central frustum of the receiving platform 221 and be supported by the edge platform of the receiving platform 221, while the inner ring pressure block can be close to the edge of the wafer.

[0131] Taking the first stage 220 as an example, a connecting rod is also provided on the first mounting plate 245 corresponding to the first stage 220. The connecting rod can pass through the receiving platform 221 and contact the annular pressure ring 222. When the lifting driver drives the first mounting plate 245 to lift the first ejector pin 241, the connecting rod rises together with the first ejector pin 241. The connecting rod can lift the annular pressure ring 222, making the annular pressure ring 222 move away from the receiving platform 221. It should be noted that after the annular pressure ring 222 is lifted, it will be higher than the first ejector pin 241, so that the wafer loading equipment can put the wafer to be processed between the annular pressure ring 222 and the first ejector pin 241, and then the first ejector pin 241 can take away the wafer through the lifting movement. After the wafer loading equipment is withdrawn, the lifting driver drives the first mounting plate 245, carrying the first ejector pin 241 and connecting rod, to descend. The first ejector pin 241, being at a lower height, will first place the wafer onto the receiving platform 221. As the first mounting plate 245 continues to descend, the annular retaining ring 222 can hold the wafer in place. Simultaneously, the wafer surface is exposed within the inner ring of the annular retaining ring 222, ensuring that the annular retaining ring 222 does not interfere with normal etching and resist removal operations.

[0132] The annular retaining ring 222 presses the wafer against the receiving stage 221. The combined effect of pressure and the adsorption force of the electrostatic chuck ensures the wafer is firmly positioned on the stage, improving its positional stability. This reduces etching and resist removal deviations caused by wafer displacement, thereby improving etching and resist removal accuracy, product quality, and yield. During wafer loading and unloading, the coordinated action of the annular retaining ring and the ejector pins also reduces the risk of wafer damage and saves production costs.

[0133] It should be added that:

[0134] As can be seen from the above, the electrostatic chuck, the positioning drive component 249, and other functional components that require an external power supply and are located inside the spherical housing 210 can have their power cables passed through a hollow tube-shaped rotary joint 251 to achieve external connection.

[0135] As can be seen from the above, the cooling and heating pipes that need to be connected to the temperature control channel 223 can also be externally connected by a hollow tube-shaped rotary joint 251; furthermore, the cooling and heating pipes are relatively fixedly connected to the rotary joint 251, or the rotary joint 251 can be rotated in both directions, so that the pipes inside and outside the hollow tube will not be disturbed by rotation, and the temperature control agent inside the tube can always flow normally.

[0136] When the cooling and heating pipes to be connected to the temperature control channel 223 are disconnect-reconnect magnetic structures, a more detailed external connection description is provided above, and will not be repeated here.

[0137] In other words, the design of the flipping mechanism 200 eliminates concerns about the external connection of its internal cables and pipes.

[0138] (iii) The photoresist in the photoresist removal chamber 120 is decomposed using plasma (RPS mechanism, using O2 and N2 as reaction gases). The contaminants generated during photoresist removal include volatile gases CO2, CO, H2O, N2O (byproducts of the reaction between oxygen and nitrogen), as well as a small amount of incompletely decomposed carbon particles.

[0139] The dry pump (second vacuum equipment 420) can pump nitrogen, oxygen and volatile pollutants (such as CO2) at a speed of hundreds of m³ / h, ensuring that the residence time of the degummed pollutants in the cavity is extremely short (millisecond level).

[0140] Therefore, after the adhesive is removed, the electrostatic chuck and part of the spherical shell 210 in the adhesive removal chamber 120 will hardly be contaminated. Even if there are contaminants on their surfaces, these contaminants will not react with the etching gas or the wafer surface material.

[0141] (iv) Contaminants generated by etching include:

[0142] 1. Metal oxides: At high temperatures, metal elements (Al, Cu, Ti, etc.) react with residual oxygen to form Al2O3, CuO, TiO2, etc.

[0143] 2. Carbides / nitrides: Hydrocarbon radicals in plasma react with silicon to form SiC, and nitrogen radicals react with metals to form TiN;

[0144] 3. Carbon deposition: Carbon particles generated from the decomposition of photoresist are not completely vaporized and are deposited as an amorphous carbon film;

[0145] These pollutants often have high melting points (Al2O3 melting point 2072℃, SiC melting point 2700℃), stable chemical properties, and particle sizes that are mostly submicron (0.1~10μm) and have high densities (e.g. Al2O3 density 3.97g / cm³).

[0146] Therefore, on the one hand, the dry pump (first vacuum device 410) can effectively clean the etching chamber 101, and on the other hand, these contaminants will not react with the degumming gases (O2, N2) and are non-volatile.

[0147] In other words, removing the adhesive and etching have almost no effect on each other.

[0148] Therefore, the resist removal and etching can be integrated into one cavity, achieving dual functionality in one cavity.

[0149] The first vacuum pump 410 and the second vacuum pump 420 are located near the spherical shell 210. During the process, most of the by-products can be directly pumped away by the dry pump and will hardly be deposited on the electrostatic chuck or the spherical shell 210.

[0150] After 100-150 hours of etching and / or resist removal processes within the 100-cubic-meter workshop, a thorough cleaning of the cavity will be performed (either by opening the cavity for cleaning or by introducing cleaning gas) to further prevent residual contaminants from affecting the gaseous environment required for the process.

[0151] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An integrated etching and resist removal cavity, characterized in that, include: Studio (100) is used to provide space for wafer processing; A flipping mechanism (200) is rotatably suspended within the working chamber (100) and divides the inner cavity of the working chamber (100) into an etching chamber (101) and a desizing chamber (102): An etching mechanism (310) is used to etch the wafer within the etching cavity (101); The adhesive removal mechanism (320) is used to remove adhesive from the wafers in the adhesive removal cavity (102); The flipping mechanism (200) includes: A spherical shell (210) has a top surface and a bottom surface that are planar, and a circumferential surface that connects the top surface and the bottom surface that is spherical. A first platform (220) is provided on the top surface; The second stage (230) is disposed on the bottom surface. The first stage (220) and the second stage (230) are symmetrically arranged. When one of the first stage (220) and the second stage (230) is in the etching cavity (101), the other is in the resist removal cavity (102). Both the first stage (220) and the second stage (230) are electrostatic chucks. A flip-drive is used to drive the spherical housing (210) to rotate, thereby exchanging the positions of the first stage (220) and the second stage (230); A lifting mechanism is disposed within the spherical shell (210), the lifting mechanism comprising: The first ejector pin (241) has a first through hole on the first platform (220), and the first ejector pin (241) can pass through the first through hole; The second ejector pin (242) has a second through hole on the second platform (230), and the second ejector pin (242) can pass through the second through hole; A lifting driver is used to drive the first ejector pin (241) to move closer to or away from the first perforation and the second ejector pin (242) to move closer to or away from the second perforation; When the first stage (220) is located in the etching cavity (101), the lifting driver drives the first ejector pin (241) to rise, and the first ejector pin (241) can pass through the first through hole and receive the wafer; After obtaining the wafer, the lifting driver drives the first ejector pin (241) to descend so that the wafer falls onto the first stage (220), and the first stage (220) can fix the wafer by electrostatic adsorption. After the etching of the wafer is completed, the flip driver drives the spherical housing (210) to rotate, so that the first stage (220) carries the wafer into the deresin chamber (102), while the second stage (230) enters the etching chamber (101). The lifting driver drives the second pin (242) to rise, and the second pin (242) can pass through the second through hole and receive the wafer; Meanwhile, the wafer on the first stage (220) can undergo resist removal within the resist removal cavity (102).

2. The etching and resist removal integrated cavity according to claim 1, characterized in that, It also includes a sealing mechanism, which is disposed between the spherical shell (210) and the working chamber (100) to prevent gas from communicating between the etching chamber (101) and the desizing chamber (102); The inner wall of the working chamber (100) is provided with a ring-shaped groove; The sealing mechanism includes: A magnetic fluid (110) is filled in the annular groove, and the magnetic fluid (110) can form a sealing liquid film under the action of a magnetic field; An elastic sealing lip (120) is arranged around the circumferential surface of the spherical shell (210); Under normal operating conditions, the spherical shell (210) is stationary, the elastic sealing lip (120) is in close contact with the sealing liquid film, and the magnetic fluid (110) and the elastic sealing lip (120) work together to achieve the sealing of the spherical shell (210) and the working chamber (100).

3. The integrated etching and resist removal cavity according to claim 1, characterized in that, The upper part of the working chamber (100) is provided with a first inlet and the lower part is provided with a second inlet. The first inlet is connected to the etching cavity (101) and the second inlet is connected to the resist removal cavity (102). The wafer to be etched can enter the working chamber (100) through the first wafer inlet. The wafer that has completed etching and resist removal can leave the working chamber (100) through the second wafer inlet.

4. The integrated etching and resist removal cavity according to claim 1, characterized in that, The upper part of the working chamber (100) is provided with a first air inlet and a first air outlet. The etching reaction gas can enter the etching chamber (101) through the first air inlet and can be discharged from the etching chamber (101) through the first air outlet. The lower part of the working chamber (100) is provided with a second air inlet and a second air outlet. The adhesive removal reaction gas can enter the adhesive removal chamber (102) through the second air inlet and can be discharged from the adhesive removal chamber (102) through the second air outlet. The first air outlet and the second air outlet are located near the connection position between the spherical shell (210) and the working chamber (100).

5. The integrated etching and resist removal cavity according to claim 1, characterized in that, It also includes a temperature control mechanism, which is used to regulate the temperature of the first stage (220) and the second stage (230); The temperature control mechanism can cool down the first stage (220) or the second stage (230) in the etching chamber (101) and heat up the second stage (230) or the first stage (220) in the desizing chamber (102).

6. The integrated etching and resist removal cavity according to claim 5, characterized in that, Both the first stage (220) and the second stage (230) are provided with temperature control channels (223); The temperature control mechanism includes a heating pipe and a cooling pipe; When the first stage (220) or the second stage (230) is in the etching cavity (101), the cooling pipe is connected to the temperature control channel (223), and the coolant can enter the temperature control channel (223) through the cooling pipe, so that the first stage (220) or the second stage (230) is cooled down; When the first stage (220) or the second stage (230) is in the degumming chamber (102), the heating pipe is connected to the temperature control channel (223), and the heating agent can enter the temperature control channel (223) through the heating pipe, so that the first stage (220) or the second stage (230) heats up.

7. The integrated etching and resist removal cavity according to claim 1, characterized in that, The lifting drive includes: A gear (243) and a rack (244) are provided, wherein the rack (244) is disposed between the first ejector pin (241) and the second ejector pin (242). When the gear (243) meshes with the rack (244), the gear (243) rotates, and the rack (244) can lift the first ejector pin (241) or the second ejector pin (242) under the transmission of the gear (243). A first mounting plate (245) is provided with a plurality of first ejector pins (241). The second mounting plate (246) is provided with a plurality of second ejector pins (242); The first elastic element (247) has one end connected to the first mounting plate (245) and the other end connected to the inner top surface of the spherical shell (210); The second elastic element (248) has one end connected to the second mounting plate (246) and the other end connected to the inner bottom surface of the spherical shell (210); When the rack (244) lifts the first mounting plate (245) or the second mounting plate (246), the first elastic member (247) or the second elastic member (248) can both adapt to deformation and keep the first mounting plate (245) and the second mounting plate (246) stable after the rack (244) is separated from the first mounting plate (245) or the second mounting plate (246).

8. The integrated etching and resist removal cavity according to claim 7, characterized in that, The flip drive can both drive the spherical housing (210) to rotate and drive the gear (243) to rotate; The flip drive includes a flip motor (261), and a first drive wheel (262) and a second drive wheel (263) are spaced apart on the output shaft of the flip motor (261). The flipping mechanism (200) also includes: Rotary joint (251), the spherical shell (210) is rotatably connected to the working chamber (100) through the rotary joint (251), the rotary joint (251) is a tubular hollow structure; A rotating shaft (252) is inserted into the rotary joint (251), and a gear (243) is disposed on the rotating shaft (252); The first driven wheel (253) is sleeved on the rotary joint (251) and is linked to the first driving wheel (262) through the first belt; The second driven wheel (254) is sleeved on the rotating shaft (252) and is linked to the second driving wheel (263) through the second belt; The first tensioning pulley can cooperate with the first driving pulley (262) and the first driven pulley (253) to tension the first belt; The second tensioning pulley can cooperate with the second driving pulley (263) and the second driven pulley (254) to tension the second belt; The first driving member is used to drive the first tensioning pulley closer to or away from the first belt to change the tension of the first belt. The second driving member is used to drive the second tension pulley closer to or away from the second belt to change the tension of the second belt. The second belt is in a slipping state and the first belt is in a tensioned state. The flipping motor (261) drives the first driving wheel (262) to rotate. The first belt can drive the first driven wheel (253) and the rotary joint (251) to rotate, thereby realizing the rotation of the spherical shell (210). The first belt is in a slipping state, the second belt is in a tensioned state, the flip motor (261) drives the second driving wheel (263) to rotate, and the second belt can drive the second driven wheel (254) and the rotating shaft (252) to rotate, thereby realizing the rotation of the gear (243).

9. The integrated etching and resist removal cavity according to claim 8, characterized in that, The lifting mechanism also includes a retraction drive (249) for driving the rack (244) to move closer to or away from the gear (243). When the spherical housing (210) rotates, the rack (244) moves away from the gear (243), thus preventing the gear (243) and the rack (244) from damaging each other.

10. The integrated etching and resist removal cavity according to claim 1, characterized in that, Both the first stage (220) and the second stage (230) include: The receiving platform (221) is used to receive wafers; The annular retaining ring (222) can abut against the edge of the wafer from top to bottom to fix the wafer on the receiving platform (221); The annular pressure ring (222) is linked with the first ejector pin (241) or the second ejector pin (242) and can rise and fall with the first ejector pin (241) or the second ejector pin (242); When the annular pressure ring (222) rises, the wafer to be etched can enter between the receiving platform (221) and the annular pressure ring (222) and be received by the first ejector pin (241) or the second ejector pin (242); After the annular pressure ring (222) descends, it can press the wafer against the receiving platform (221) and expose the surface of the wafer in the inner ring of the annular pressure ring (222) so that the wafer surface can be etched and stripped.

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