Wafer alignment system, wafer bonding equipment and wafer bonding alignment method

Abstract

The invention provides a wafer alignment system, wafer bonding equipment and a wafer bonding alignment method. The wafer alignment system comprises a hot disc, a limiting mechanism arranged on the hot disc in a penetrating mode and at least two auxiliary alignment mechanisms arranged on the two sides of the hot disc. The limiting alignment mechanism comprises at least two supporting assemblies which jointly form a limiting area to support and limit the wafer, and the supporting assemblies can do lifting motion in the direction perpendicular to the hot disc. The auxiliary alignment mechanism comprises a first supporting cantilever and a second supporting cantilever which are used for supporting a wafer, and the first supporting cantilever and the second supporting cantilever can synchronously rotate in opposite directions so as to enter and exit a limiting area. Through the design of the limiting mechanism and the auxiliary alignment mechanism, the alignment action can be performed on the two wafers with the same size, and air between the two wafers can be conveniently and cleanly pumped out when vacuum pumping operation is performed, so that no bubble is generated between the two wafers.

Description

Technical Field

[0001] The present application relates to the field of semiconductor equipment technology, and in particular to a wafer alignment system and a wafer bonding device. Background Art

[0002] Wafer bonding is a wafer-level packaging technology used to manufacture microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics to ensure a mechanically stable and sealed package. Usually, wafer bonding refers to aligning the wafer with the carrier before bonding. Therefore, reliable alignment of the wafer with the carrier in the wafer bonding process is a critical step in the wafer bonding process.

[0003] For wafers and carriers of the same size, during the alignment process in the process chamber of the bonding equipment, multiple ejectors with arc-shaped limiters on the inner side are usually used to hold the lower edge of the carrier, and then the wafer is transferred to the top of the carrier by a vacuum adsorption robot and placed on the carrier surface after calibration. However, in the traditional method, the air between the wafer and the carrier cannot be completely evacuated during vacuuming, which easily leads to the generation of bubbles. Summary of the invention

[0004] The present application discloses a wafer alignment system, comprising: a hot plate; a limiting mechanism, which is penetrated on the hot plate, wherein the limiting mechanism comprises at least two supporting components which together form a limiting area to support and limit the wafer, and the supporting component can be lifted and lowered in a direction perpendicular to the hot plate; at least two auxiliary alignment mechanisms, which are symmetrically arranged on both sides of the hot plate, wherein the auxiliary alignment mechanism comprises a first supporting cantilever and a second supporting cantilever for supporting the wafer, and the first supporting cantilever and the second supporting cantilever can be synchronously rotated in opposite directions to achieve entry and exit from the limiting area.

[0005] The wafer alignment system disclosed in the present application may further include a first driving mechanism in its limiting mechanism, wherein the first driving mechanism drives the supporting assembly to move up and down in a direction perpendicular to the hot plate.

[0006] The wafer alignment system disclosed in the present application has a support component including a supporting member and a column connected thereto, wherein the supporting member includes a side wall for limiting the wafer and a step for supporting the wafer.

[0007] The wafer alignment system disclosed in the present application, the auxiliary alignment mechanism further includes a second driving mechanism, wherein the second driving mechanism drives the first supporting cantilever and the second supporting cantilever to rotate.

[0008] The wafer alignment system disclosed in the present application, the second driving mechanism includes: a first power unit, a fixed seat, a movable block driven by the first power unit and performing a lifting action in a vertical direction, a driving shaft connected to the movable block, a first rotating axis and a second rotating axis that respectively drive the first supporting cantilever and the second supporting cantilever to rotate, and a synchronization block; the side walls of the first rotating axis and the second rotating axis are symmetrically formed with a spiral guide groove, the synchronization block is symmetrically formed with a guide end extending into the spiral guide groove, and the first rotating axis and the second rotating axis remain parallel during rotation.

[0009] The wafer alignment system disclosed in the present application, the synchronization block forms a passive shaft axially docked with the driving shaft, and a connecting tube is axially sleeved between the driving shaft and the passive shaft; the first driving mechanism also includes a holding bracket that keeps the first rotating shaft and the second rotating shaft at a constant height in the vertical direction during rotation; the holding bracket includes: a supporting plate, two vertical plates perpendicular to and parallel to the supporting plate, the opposite inner sides of the two vertical plates form positioning blocks for the first rotating shaft and the second rotating shaft to vertically penetrate, the first bottom end of the first rotating shaft away from the first supporting cantilever and the second bottom end of the second rotating shaft away from the second supporting cantilever extend into the supporting plate, and bearings are sleeved between the first bottom end and the second bottom end and the supporting plate.

[0010] Based on the above wafer alignment system, the present application also discloses a wafer bonding device, comprising: a cavity, a cover connected to the cavity, wherein the cavity and the cover accommodate the wafer alignment system according to any one of claims 1 to 4. For example, wafer bonding devices for wafers of various sizes such as 4 inches, 6 inches, 8 inches, and 12 inches.

[0011] Based on the above wafer bonding equipment, the present application also discloses a wafer bonding alignment method, including: Raise the support assembly to a first preset height, synchronously rotate the first support cantilever and the second support cantilever to outside the limiting area, place the first wafer on the support assembly, and make the first wafer located in the limiting area, wherein the support assembly supports and limits the first wafer; Synchronously rotating the first supporting cantilever and the second supporting cantilever to the limiting area, placing the second wafer on the first supporting cantilever and the second supporting cantilever, and making the second wafer located in the limiting area, wherein the first cantilever and the second supporting cantilever support the second wafer, and the supporting assembly limits the second wafer; Lowering the support assembly to a second preset height so that the hot plate heats the first wafer and evacuates the cavity; Raise the support assembly to a third preset height, which is less than or equal to the first preset height, and synchronously rotate the first support cantilever and the second support cantilever to outside the limiting area, so that the second wafer falls on the first wafer.

[0012] Compared with the prior art, the beneficial effects of this application are: In the present application, the wafer alignment system can perform alignment actions on two wafers of the same size through the design of a limit mechanism and an auxiliary alignment mechanism. For the two wafers to be bonded, the air between the two wafers can be easily extracted during the vacuum operation, so that no bubbles are generated between the two wafers. The wafer bonding equipment based on the above wafer alignment system and the corresponding bonding method can greatly improve the bonding quality.

[0013] This application can be applied to wafer bonding equipment for wafers of various sizes such as 4 inches, 6 inches, 8 inches, and 12 inches. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. 1 is a three-dimensional diagram of a wafer alignment system according to an embodiment of the present application.

[0015] Figure 2 FIG. 1 is a top view of a wafer alignment system according to an embodiment of the present application.

[0016] Figure 3 It is a three-dimensional diagram of a limiting mechanism according to an embodiment of the present application.

[0017] Figure 4 It is a three-dimensional diagram of a support column according to an embodiment of the present application.

[0018] Figure 5 FIG. 1 is a three-dimensional diagram of a wafer alignment system according to an embodiment of the present application.

[0019] Figure 6 It is a three-dimensional diagram of a second driving mechanism according to an embodiment of the present application.

[0020] Figure 7 It is a partial three-dimensional diagram of an auxiliary alignment mechanism according to an embodiment of the present application.

[0021] Figure 8 It is a three-dimensional diagram of a support assembly according to an embodiment of the present application.

[0022] Fig. 9 A schematic diagram of placing a first wafer in a wafer alignment system according to an embodiment of the present application.

[0023] Fig.10 A schematic diagram of placing a first wafer and a second wafer in a wafer alignment system according to an embodiment of the present application.

[0024] Fig.11 for Fig.10 A local enlarged view of the first supporting cantilever and the second supporting cantilever isolating the first wafer and the second wafer.

[0025] Fig.12 A schematic diagram of placing a first wafer and a second wafer in a wafer alignment system according to an embodiment of the present application.

[0026] Fig.13 A schematic diagram of placing a first wafer and a second wafer in a wafer alignment system according to an embodiment of the present application.

[0027] Fig.14 A schematic diagram of a wafer bonding device including a wafer alignment system according to an embodiment of the present application. Implementation

[0028] The present application is described in detail below in conjunction with the various embodiments shown in the accompanying drawings, but it should be noted that these embodiments are not limitations of the present application, and any equivalent transformations or substitutions in functions, methods, or structures made by ordinary technicians in the field based on these embodiments are all within the scope of protection of the present application.

[0029] It should be understood that, in the present application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present technical solution and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present technical solution.

[0030] The present application discloses a wafer alignment system, referring to Figure 1 and Figure 2 As shown, the wafer alignment system includes: a heat plate 20 , a limiting mechanism 30 penetrating the heat plate 20 , and at least two auxiliary alignment mechanisms 40 symmetrically arranged on both sides of the heat plate 20 .

[0031] The limiting mechanism 30 includes at least two limiting regions 200 (see Figure 2 ) A support assembly 32 for limiting and supporting the wafer and a first driving mechanism 31 for driving the support assembly 32 to move up and down in a direction perpendicular to the hot plate 20. The limiting area 200 is preferably circular to match the wafer.

[0032] The auxiliary alignment mechanism 40 includes a first supporting cantilever 42 for supporting the wafer, a second supporting cantilever 43, and a second driving mechanism 41 for driving the first supporting cantilever 42 and the second supporting cantilever 43 to rotate synchronously in opposite directions. The first supporting cantilever 42 and the second supporting cantilever 43 can enter and exit the limiting area 200 by rotating. It can be understood by those skilled in the art that when the first supporting cantilever 42 and the second supporting cantilever 43 enter and exit the limiting area 200 by rotating, they will not interfere with the limiting mechanism 30.

[0033] The number of auxiliary alignment mechanisms 40 in the present application is preferably two, and of course three or even more auxiliary alignment mechanisms 40 can be designed according to design requirements. It is only necessary to allow the first support cantilever 42 and the second support cantilever 43 to rotate in and out of the limiting area 200 without any interference with the limiting mechanism 30.

[0034] Figure 2 The first supporting cantilever 42 and the second supporting cantilever 43 of the auxiliary alignment mechanism 40 are in an open state, and the first supporting cantilever 42 and the second supporting cantilever 43 are outside the limiting area. Figure 1 The first supporting cantilever 42 and the second supporting cantilever 43 of the auxiliary alignment mechanism 40 are in a closed state, and the first supporting cantilever 42 and the second supporting cantilever 43 are in the limiting area. Figure 2 As shown in FIG. 1 , when the first supporting cantilever 42 moves from the closed state to the open state, it rotates along the direction of the dotted arrow b1, and when the second supporting cantilever 43 moves from the closed state to the open state, it moves along the direction of the dotted line b2, that is, the first supporting cantilever 42 and the second supporting cantilever 43 move from the closed state to the open state. Figure 1 The status shown is Figure 2 When the state shown moves, it moves in opposite directions, so that the first support cantilever 42 and the second support cantilever 43 respectively form two friction forces with the wafer in opposite directions, and the two friction forces can offset each other, and the wafer will not be offset during the movement. Similarly, when the first support cantilever 42 moves from the open state to the closed state, it rotates in the direction of the dotted arrow a1, and when the second support cantilever 43 moves from the open state to the closed state, it moves in the direction of the dotted line a2. The first support cantilever 42 and the second support cantilever 43 rotate synchronously in opposite directions, generating friction forces that offset each other.

[0035] Those skilled in the art should understand that the definition of opposite directions here is for the convenience of describing the movement state of the first support cantilever 42 and the second support cantilever 43. It can be understood that in the same plane, when one of them moves clockwise, the other moves counterclockwise, thereby forming two friction forces that cancel each other out, thereby avoiding displacement of the wafer during rotation.

[0036] The wafer alignment system of the present application can be preferably applied to a wafer bonding device, referring to Figure 1 , can be, for example, arranged in the cavity 10 of the wafer bonding equipment, and penetrated on the support plate 11 in the cavity 10 .

[0037] Ginseng Figure 1 and Figure 3 As shown, in this embodiment, the limiting mechanism 30 includes: four support assemblies 32 arranged vertically for clamping and supporting the wafer, a support plate 319 connected to the support assemblies, and a first driving mechanism 31 that drives the support plate 319 to move up and down in the vertical direction. The first driving mechanism 31 drives the support plate 319 and the support assembly 32 to move up and down in the vertical direction. Fig.14 The device moves up and down in the vertical direction indicated by the double-headed arrow d.

[0038] Ginseng Figure 1 , Figure 3 and Figure 4 As shown, the support assembly 32 includes a column 331 fixedly connected to the support plate 319, a support member 332 movably connected to the column 331, and the support member 332 includes a side wall 3321 and a step 3322. The side wall 3321 can limit the wafer so that the wafer falls into the limiting area 200. It can be understood by those skilled in the art that the side wall 3321 is facing the center O of the limiting area 200 (refer to Figure 2 ), so that multiple support components 32 can form the limiting area 200. The step 3322 can support the wafer. When the wafer is placed on the support component 32, it is supported by the step 3322. The side wall 3321 can preferably be an arc-shaped side wall to better limit the wafer. The steps 3322 formed on the top of the support component 32 are preferably located in the same horizontal plane, and the lengths of the columns 331 of the support component 32 to the support column 36 are equal.

[0039] Those skilled in the art should understand that the shape of the supporting member 332 of the supporting assembly 32 in the present application can be varied, that is, the supporting member 332 at least includes a step 3322 for supporting the wafer and a side wall 3321 for limiting the wafer.

[0040] As an optional implementation, Figure 8 As shown, the present application also discloses another specific embodiment of a wafer alignment system, which is mainly different from the wafer alignment system disclosed as the above embodiments in that, in this embodiment, only two support assemblies 32 are needed to realize the limit area 200. The support assembly 32 includes a support member 342 and a column 341. The support member 342 includes a side wall 3421 and a step 3422. The bottom of the support member 342 is connected to two columns 341, and the multiple columns 341 are equal in length and connected to the bottom of the support member 342. Figure 3 The tray 319 is shown.

[0041] Those skilled in the art can understand that Figure 8 The supporting member 342 and Figure 4 The supporting members 341 in the embodiment can all achieve the support and limit function for the wafer, but the specific forms can be completely different. The supporting assembly 32 of the limit mechanism 30 in the present application is intended to achieve the support and limit function for the wafer, the support can be achieved through the steps, and the limit can be achieved through the side walls, and the specific shape and setting can be flexibly set.

[0042] It is also understood by those skilled in the art that the specific number of columns can be flexibly changed according to actual design requirements, for example, Figure 8 The number of columns in can also be adjusted to 1.

[0043] Regarding the specific number of support components 32, those skilled in the art should know that when the side wall 3321 is preferably arc-shaped, at least two support components 32 are required to enclose a limiting area, and when the side wall 3321 is a plane, at least three support components 32 are required to enclose a limiting area. Regarding the number of support components 32 in this application, taking 4 as an example, which is preferably used, the cost and the desired effect of limiting and supporting the wafer can be taken into account.

[0044] Continue to refer to Figure 3 As shown, the first driving mechanism 31 may exemplarily include a first driving unit 311 (for example, a cylinder or a linear motor, etc.), a fixed seat 312, a sliding seat 313, a track is arranged between the fixed seat 312 and the sliding seat 313, and a slider (not shown) that forms a linear motion along the track. In view of the fact that the sliding connection technology configured between the fixed seat 312 and the sliding seat 313 is a mature prior art, it is not described in detail in this embodiment. At the same time, a bending portion 3121 is formed at the top of the fixed seat 312, and the bending portion 3121 is mounted to the bottom of the support plate 11 by screws. A horizontally arranged mounting plate 314 is arranged at the top of the sliding seat 313. A vertically arranged column 316 is arranged on the mounting plate 314, and a column 317 is formed at the bottom of the support plate 319, and the column 317 extends over the support plate 319 and is fixed by screws 3171. A connecting cylinder 3173 is axially sleeved between the column 316 and the column 317. When the first driving mechanism 31 moves in the vertical direction, it drives the sliding seat 313 to perform lifting movement relative to the fixed seat 312, and finally drives the supporting plate 319 to perform lifting movement in the vertical direction, so as to synchronously drive the four supporting columns to perform lifting movement in the vertical direction.

[0045] Reference Figure 1 and Figure 3 As shown, those skilled in the art can understand that the support assembly 3 continuously penetrates the hot plate 20 and the support plate 11 located below the hot plate 20 , so that the support assembly 32 to the support column 36 are passed through the upper surface of the hot plate 20 .

[0046] Ginseng Figure 5 , Figure 6 and Figure 7 As shown, in this embodiment, the second driving mechanism 41 includes: a first power unit 411 (for example, a cylinder or a linear motor, etc.), a fixed seat 415, a moving block 412 driven by the first power unit 411 and lifting and lowering in the vertical direction, a driving shaft 417 connected to the moving block 412, a first rotating shaft 461 and a second rotating shaft 462 for driving the first supporting cantilever 42 and the second supporting cantilever 43 to rotate respectively, and a synchronous block 48. The side walls of the first rotating shaft 461 and the second rotating shaft 462 are symmetrically formed with a spiral guide groove 460, and the synchronous block 48 is symmetrically formed with a guide end 473 extending into the spiral guide groove 460, and the first rotating shaft 461 and the second rotating shaft 462 are kept parallel during rotation. Exemplarily, the first power unit 411 forms an air inlet interface 4116 and an air outlet interface 4117, and compressed air is introduced into the first power unit 411, which drives the moving block 412 to move linearly along the axis 440.

[0047] Fixed seat 415 along Figure 4 The central axis 410 performs linear motion to drive the movable block 412 to perform linear motion along the axis 410. The top of the fixed seat 415 forms a bending portion 4151, and the bending portion 4151 is fixedly connected to the bottom plate 15 by screws, and the bottom plate 15 is a part of the base 10; the bottom of the fixed seat 415 forms a baffle 4152. The movable block 412 forms a sliding connection with a guide rail 414 of the fixed seat 415 facing the side of the slider 413 and arranged vertically through the slider 413. The movable block 412 is connected to the driving shaft 417, and the free end of the driving shaft 417 forms a diameter reduction end 4171 that is longitudinally inserted into the mounting seat 418. The driving shaft 417 is sleeved with the mounting seat 418, and the mounting seat 418 is fixed to the support plate 11 by screws. The bellows 416 is axially clamped between the mounting seat 418 and the movable block 412. The driving shaft 417 vertically extends out of the mounting seat 418 , and a retaining ring 4172 is embedded in the mounting seat 418 to limit the axial displacement of the driving shaft 417 along the direction of the shaft 410 .

[0048] like Figure 7As shown, the synchronous block 48 forms a passive shaft 419 axially connected to the driving shaft 417, and a connecting cylinder 4173 is axially sleeved between the driving shaft 417 and the passive shaft 419. The passive shaft 419 vertically extends through the synchronous block 48 and is fixed by a nut 4191. The synchronous block 48 is connected to the guide end 473 extending into the spiral guide groove 460 through two bending pieces 47. The first rotating shaft 461 and the second rotating shaft 462 respectively form a spiral guide groove 460 symmetrically in the vertical direction. The bending piece 47 includes a first bending portion 471 connected to the first rotating shaft 461 (or the second rotating shaft 462) and a second bending portion 472 connected to the synchronous block 48. The first bending portion 471 forms a pin (not shown) axially connected to the guide end 473. When the first power unit 411 drives the driving shaft 417 to move up and down along the axis 410, the synchronous block 48 synchronously drives the guide end 473 to move in the spiral guide groove 460 to drive the first support cantilever 42 and the second support cantilever 43 to open or close synchronously.

[0049] For example, Figure 7 As shown, the first rotating shaft 461 and the second rotating shaft 462 have the same structure, and the first supporting cantilever 42 and the second supporting cantilever 43 have the same structure. Therefore, in this embodiment, the first rotating shaft 461 and the first supporting cantilever 42 are used as an example for explanation. A notch 422 is formed at the top of the first rotating shaft 461, and the first supporting cantilever 42 includes a sheet-shaped body 420, and the end of the first supporting cantilever 42 away from the tapered end forms a mounting end embedded in the notch 422. The first supporting cantilever 42 and the first rotating shaft 461 are movably mounted, and the first supporting cantilever 42 and the second supporting cantilever 43 can be replaced according to actual needs.

[0050] The second driving mechanism 41 also includes a retaining bracket that keeps the height of the first rotating shaft 461 and the second rotating shaft 462 constant in the vertical direction during the rotation process. The retaining bracket includes: a supporting plate 45, two vertical plates 451 that are perpendicular to the supporting plate 45 and parallel to and perpendicular to the horizontal plane, and positioning blocks 4511 are formed on the opposite inner sides of the two vertical plates 451 for the first rotating shaft 461 and the second rotating shaft 462 to vertically penetrate, and the two positioning blocks 4511 are arranged opposite to each other and are located on the inner sides of the first rotating shaft 461 and the second rotating shaft 462. The bottom free end 4611 of the first rotating shaft 461 away from the first supporting cantilever 42 and the bottom free end 4621 of the second rotating shaft 462 away from the second supporting cantilever 43 partially extend into the supporting plate 45, and bearings 466 are sleeved between the bottom free end 4611 and the bottom free end 4621 and the supporting plate 45, so that the first rotating shaft 461 and the second rotating shaft 462 can be rotated in the two supporting plates 45. It should be noted that Fig.13 The two abutment plates 45 may also form an integral structure.

[0051] Based on the specific implementation of the wafer alignment system disclosed in the aforementioned embodiments, the present application also discloses a wafer bonding device.

[0052] Ginseng Figure 1 Right now Fig.14 As shown, the present application discloses a wafer bonding device, including a cavity 10 and an openable cover 70 connected to the cavity, accommodating a wafer alignment system disclosed in any of the above specific embodiments. The wafer bonding device described in the present application can be a wafer bonding device of various sizes such as 4 inches, 6 inches, 8 inches, and 12 inches.

[0053] This application Fig.14 The cover body 70 shown is only a schematic diagram and does not represent a specific structure. The relevant design of the cover body 70 is well known to those skilled in the art and is not specifically limited in this application.

[0054] The wafer alignment system included in the wafer bonding equipment disclosed in the present application is described in the aforementioned embodiments and will not be described again here.

[0055] The present application also discloses a wafer alignment method based on a wafer bonding device using the above-mentioned wafer alignment system. Figure 1 , Figure 2 , Figures 9 to 12 As shown, the wafer alignment system of the present application is applied in a bonding device to perform alignment operation steps on the first wafer 50 and the second wafer 60 to give a detailed description.

[0056] Step 1, such as Figure 1 As shown, the first driving mechanism 31 synchronously drives the supporting assembly 32 of the limiting mechanism 30 to rise to a first preset height; Fig. 9 As shown, the second driving mechanism 41 drives the first supporting cantilever 42 and the second supporting cantilever 43 included in the auxiliary alignment mechanism 40 on both sides of the hot plate 20 to rotate synchronously to the first state; the first wafer 50 is placed on the supporting component 32 of the limiting mechanism 30, and ensures that the first wafer 50 is located in the circular limiting area 200, and the supporting component 32 supports and limits the first wafer 50.

[0057] The first preset height here should be understood by those skilled in the art to be sufficient to enable the limiting mechanism 30 to support and limit the first wafer 50 , and not affect the subsequent auxiliary alignment mechanism 40 supporting the second wafer 60 located on the first wafer 50 .

[0058] The first state here can be called an open state, that is, the first supporting cantilever 42 and the second supporting cantilever 43 should be synchronously rotated to outside the limiting area 200 so that the first wafer 50 will not interfere with the first supporting cantilever 42 and the second supporting cantilever 43 during placement.

[0059] Step 2, such as Figure 1 Shown and Fig. 9 As shown, the second driving mechanism 41 drives the first supporting cantilever 42 and the second supporting cantilever 43 to rotate synchronously to the second state; Fig.10 As shown, the second wafer 60 is placed on the first supporting cantilever 42 and the second supporting cantilever 43 on both sides of the hot plate, and the second wafer is ensured to be located in the circular limiting area 200 surrounded by the limiting mechanism 30, so that the first wafer 50 and the second wafer 60 are distributed in the form of concentric circles when viewed from a top view.

[0060] The second state here may be a closed state, that is, the first supporting cantilever 42 and the second supporting cantilever 43 should be synchronously rotated to within the limiting area 200 so as to support the second wafer 60 .

[0061] Reference Fig.11 As shown, the limiting component 32 of the limiting mechanism 30 limits the first wafer 50 and the second wafer 60 at the same time, that is, the first wafer 50 and the second wafer 60 are arranged concentrically; the limiting component 32 of the limiting mechanism 30 only supports the first wafer 50, and the second supporting cantilever 43 only supports the second wafer 60, so that there is partial space between the first wafer 50 and the second wafer 60.

[0062] Step 3: Fig.12 The limiting assembly 32 of the limiting mechanism 30 is synchronously lowered to the second preset height under the drive of the first driving mechanism 31, and the first wafer 50 is preheated by the hot plate 20. At the same time, a vacuuming action is performed to extract the air in the bonding cavity 10 to form a vacuum state in the bonding cavity 10. Here, those skilled in the art should know that the cover 7 and the cavity 10 should be in a closed state at this time before the vacuuming action can be performed.

[0063] Here, those skilled in the art should understand that the second preset height here can be adjusted according to actual conditions, and it only needs to satisfy that the first wafer 50 is dropped to a certain height and can be well heated by the hot plate 20. Preferably, the second preset height can make the first wafer 50 fully contact with the hot plate 20, so as to obtain the best heating effect.

[0064] In this step, the hot plate 20 preheats the first wafer 50. The first wafer 50 and / or the second wafer 60 to be bonded have been pre-coated with bonding glue before the aforementioned steps one to three. After preheating the first wafer 50, the generation of bubbles in the bonding glue can be reduced in the subsequent bonding process, thereby improving the bonding quality.

[0065] Step 4: Fig.13The limiting assembly 12 of the limiting mechanism 30 is synchronously driven by the first driving mechanism 31 to rise to a third preset height, which is less than or equal to the first preset height; the second driving mechanism 41 synchronously drives the first supporting cantilever 42 and the second supporting cantilever 43 to rotate to the first state, that is, enter the limiting area, so that the second wafer 60 falls on the first wafer 50, and the second wafer 60 and the first wafer 50 are in a bonding state.

[0066] Subsequently, a bonding operation may be performed on the first wafer 50 and the second wafer 60 .

[0067] Here, the third preset height is preferably equal to the first preset height, so that the second wafer 60 can always be located in the limiting area defined by the limiting mechanism 30 during the falling process, thereby ensuring that the centers of the first wafer 50 and the second wafer 60 can still remain concentric.

[0068] Optionally, the first wafer 50 is a semiconductor wafer, such as a silicon-based wafer, a gallium nitride wafer, etc.; the second wafer 60 is a carrier, such as glass, sapphire, silicon carbide, etc. The second wafer 60 serves as a substrate to provide support for the first wafer 50. Optionally, the first wafer 50 and the second wafer 60 may also be homogeneous wafers, that is, the first wafer 50 and the second wafer 60 are both semiconductor wafers; further, the first wafer 50 and the second wafer 60 may both be silicon-based wafers of standard thickness, or may both be thinned silicon-based wafers, or the first wafer 50 may be a thinned silicon-based wafer and the second wafer 60 may be a silicon-based wafer of standard thickness, etc.

[0069] The series of detailed descriptions listed above are only specific descriptions of feasible implementation methods of the present application. They are not intended to limit the scope of protection of the present application. Any equivalent implementation methods or changes that do not deviate from the technical spirit of the present application should be included in the scope of protection of the present application.

[0070] It is obvious to those skilled in the art that the present application is not limited to the details of the exemplary embodiments described above, and that the present application can be implemented in other specific forms without departing from the spirit or essential features of the present application. Therefore, the embodiments should be regarded as exemplary and non-limiting in all respects, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present application. Any reference numeral in a claim should not be regarded as limiting the claim to which it relates.

[0071] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A wafer alignment system, characterized in that: include hot plate; A limiting mechanism is disposed on the hot plate, wherein the limiting mechanism includes at least two supporting components that together form a limiting area to support and limit the wafer, and the supporting component can move up and down in a direction perpendicular to the hot plate; At least two auxiliary alignment mechanisms are symmetrically arranged on both sides of the hot plate, wherein the auxiliary alignment mechanism includes a first supporting cantilever and a second supporting cantilever for supporting the wafer, and the first supporting cantilever and the second supporting cantilever can be synchronously rotated in opposite directions to achieve entry and exit of the limit area.

2. The wafer alignment system according to claim 1, characterized in that: The limiting mechanism further comprises a first driving mechanism, wherein the first driving mechanism drives the supporting assembly to move up and down in a direction perpendicular to the hot plate.

3. The wafer alignment system according to claim 1, characterized in that: The support assembly includes a supporting member and a column connected thereto, wherein the supporting member includes a side wall for limiting the wafer and a step for supporting the wafer.

4. The wafer alignment system according to claim 1, characterized in that: The auxiliary alignment mechanism further includes a second driving mechanism, wherein the second driving mechanism drives the first supporting cantilever and the second supporting cantilever to rotate.

5. The wafer alignment system according to claim 4, characterized in that: The second driving mechanism comprises: A first power unit, a fixed seat, a moving block driven by the first power unit and lifting in a vertical direction, a driving shaft connected to the moving block, a first rotating shaft and a second rotating shaft driving the first supporting cantilever and the second supporting cantilever to rotate respectively, and a synchronous block; The side walls of the first rotating shaft and the second rotating shaft symmetrically form a spiral guide groove, and the synchronous block symmetrically forms a guide end extending into the spiral guide groove, and the first rotating shaft and the second rotating shaft remain parallel during rotation.

6. The wafer alignment system according to claim 5, characterized in that: The synchronization block forms a passive shaft axially connected to the driving shaft, and a connecting cylinder is axially sleeved between the driving shaft and the passive shaft; The first driving mechanism further includes a holding bracket for keeping the heights of the first rotating shaft and the second rotating shaft constant in the vertical direction during the rotation process; The retaining bracket includes: a supporting plate, two vertical plates perpendicular to and parallel to the supporting plate, positioning blocks for the first rotating shaft and the second rotating shaft to pass through vertically formed on the opposite inner sides of the two vertical plates, the first rotating shaft extending away from the first bottom end of the first supporting cantilever and the second rotating shaft extending away from the second bottom end of the second supporting cantilever into the supporting plate, and bearings are sleeved between the first bottom end, the second bottom end and the supporting plate.

7. A wafer bonding device, characterized in that: include: A cavity, and a cover connected to the cavity, wherein the cavity and the cover accommodate the wafer alignment system as described in any one of claims 1 to 4.

8. A wafer bonding alignment method implemented by using the wafer bonding equipment of claim 6, characterized in that: include: Raise the support assembly to a first preset height, synchronously rotate the first support cantilever and the second support cantilever to outside the limiting area, place the first wafer on the support assembly, and make the first wafer located in the limiting area, wherein the support assembly supports and limits the first wafer; Synchronously rotating the first supporting cantilever and the second supporting cantilever to the limiting area, placing the second wafer on the first supporting cantilever and the second supporting cantilever, and making the second wafer located in the limiting area, wherein the first cantilever and the second supporting cantilever support the second wafer, and the supporting assembly limits the second wafer; Lowering the support assembly to a second preset height so that the hot plate heats the first wafer and evacuates the cavity; Raise the support assembly to a third preset height, which is less than or equal to the first preset height, and synchronously rotate the first support cantilever and the second support cantilever to outside the limiting area, so that the second wafer falls on the first wafer.

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