A semiconductor laser element of a violet-ultraviolet band

Abstract

The application discloses a semiconductor laser element in the violet-ultraviolet wave band, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer, wherein the upper waveguide layer and the upper confinement layer are provided with an interlayer coherent hole tunneling layer, and the interlayer coherent hole tunneling layer comprises a first interlayer coherent hole tunneling layer, a second interlayer coherent hole tunneling layer and a third interlayer coherent hole tunneling layer. The application constructs a highly periodic electrostatic potential, tunes Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers in the laser, reduces the Mg acceptor activation energy of the p-type semiconductor, improves the ionization efficiency of Mg, thereby inducing the interlayer coherent hole tunneling injection of the hole generation layer of the laser into the active layer, improving the hole injection efficiency of the active layer, improving the matching degree and uniformity of the electrons and holes in the active layer, and improving the optical power and slope efficiency of the laser element.

Description

Technical Field

[0001] This invention relates to the field of semiconductor optoelectronic device technology, and in particular to a semiconductor laser element in the ultraviolet band. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, have a small full width at half maximum (FW), and very high brightness; a single laser can have an output power in the W range. In contrast, nitride semiconductor LEDs emit spontaneous radiation, and the output power of a single LED is in the mW range; 2) Lasers can operate at current densities of up to kA / cm². 2 The efficiency of LEDs is more than two orders of magnitude higher than that of nitride LEDs, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect; 3) LEDs emit spontaneous transition radiation without external influence, producing incoherent light from high energy levels to low energy levels, while lasers emit stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference of the electron transition, producing coherent light between the photon and the induced photon; 4) The principles are different: LEDs emit radiative recombination light under the action of external voltage, where electrons and holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met, which must satisfy the inversion distribution of charge carriers in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, satisfying the threshold condition so that the gain is greater than the loss, and finally outputting laser light.

[0004] Nitride semiconductor lasers have the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong Stark effect of quantum confinement in QCSE limits the improvement of laser electro-lasing gain; 2) High internal defect density and imperfect crystal quality result in low quantum well luminous efficiency, and high dislocation density reduces the laser's lifetime; 3) The Mg acceptor activation energy of p-type semiconductors is high and the ionization efficiency is low. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility, resulting in severe electron-hole asymmetry mismatch in the quantum well, electron leakage and carrier delocalization, making hole transport in the quantum well more difficult, non-uniform carrier injection, non-uniform gain, broadening of the laser gain spectrum, and a decrease in peak gain. Summary of the Invention

[0005] This invention proposes a semiconductor violet-ultraviolet laser element. The specific hole mobility distribution and effective electron mass distribution of the interlayer coherent hole tunneling layer construct a highly periodic electrostatic potential. Tuning the Feshbach molecular resonance enhances the interaction between excitons and holes residing in different layers of the laser, reducing the Mg acceptor activation energy of the p-type semiconductor and improving the ionization efficiency of Mg. This induces interlayer coherent hole tunneling injection into the active layer, improving the hole injection efficiency of the active layer, enhancing the matching degree and uniformity of electrons and holes in the active layer, lowering the excitation threshold of the laser element, enhancing the confinement factor and peak gain, and improving the optical power and slope efficiency of the laser element.

[0006] This invention provides a semiconductor ultraviolet laser device, which, from bottom to top, comprises a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. An interlayer coherent hole tunneling layer is provided between the upper waveguide layer and the upper confinement layer.

[0007] The interlayer coherent hole tunneling layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0008] The interlayer coherent hole tunneling layer includes a first interlayer coherent hole tunneling layer, a second interlayer coherent hole tunneling layer, and a third interlayer coherent hole tunneling layer.

[0009] Preferably, the hole mobility distribution of the first interlayer coherent hole tunneling layer has the function y = A + B*x. 2 / sinx curve distribution; the hole mobility distribution of the second interlayer coherent hole tunneling layer has the function y=C+E*e x / x First quadrant curve distribution; the hole mobility distribution of the third interlayer coherent hole tunneling layer has the function y=F+G*x / e x Curve distribution.

[0010] Preferably, the hole mobility of the first interlayer coherent hole tunneling layer is d, the hole mobility of the second interlayer coherent hole tunneling layer is e, and the hole mobility of the third interlayer coherent hole tunneling layer is f, where: 5 < e < f < d < 1000 (cm²) 2 / V / s).

[0011] Preferably, the effective electron mass distribution of the first interlayer coherent hole tunneling layer has a function y = H + I*xJ*sinx curve distribution; the effective electron mass distribution of the second interlayer coherent hole tunneling layer has a function y = K + L*e x The sinx curve distribution in the first quadrant; the effective electron mass distribution of the third interlayer coherent hole tunneling layer has the function y = M + N*e. x +P*cosx distribution of curves in the second and third quadrants.

[0012] Preferably, the effective electron mass of the first interlayer coherent hole tunneling layer is g, the effective electron mass of the second interlayer coherent hole tunneling layer is h, and the effective electron mass of the third interlayer coherent hole tunneling layer is i, wherein: 0.01 < g < i < h < 5.

[0013] Preferably, the electron affinity distribution of the first interlayer coherent hole tunneling layer has the function y = O + Q*x. 2 -R*e x The electron affinity distribution of the second interlayer coherent hole tunneling layer has a function y = S + x + a / x (a > 0) in the third quadrant; the electron affinity distribution of the third interlayer coherent hole tunneling layer has a function y = W + x 2 e x Curve distribution; the electron affinity of the first interlayer coherent hole tunneling layer is j, the electron affinity of the second interlayer coherent hole tunneling layer is k, and the electron affinity of the third interlayer coherent hole tunneling layer is l, where: 0.1 < l < k < j < 10 (eV).

[0014] Preferably, the peak velocity electric field distribution of the first interlayer coherent hole tunneling layer has the function y = U + V*x. 2 -e x Curved distribution; the peak velocity electric field distribution of the second interlayer coherent hole tunneling layer has the function y = Z + e x The peak velocity electric field distribution of the third interlayer coherent hole tunneling layer has the function y = T + xe. x Curve distribution; the peak velocity electric field of the first interlayer coherent hole tunneling layer is m, the peak velocity electric field of the second interlayer coherent hole tunneling layer is n, and the peak velocity electric field of the third interlayer coherent hole tunneling layer is p, where: 20 < m < p < n < 1000 (kV / m).

[0015] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. Any combination, with a thickness of 10–100 angstroms, and the barrier layer being any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10–200 angstroms.

[0016] Preferably, the lower confinement layer, lower waveguide layer, upper waveguide layer, and upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0017] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, or sapphire / SiN composite substrate. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0018] Compared with the prior art, the semiconductor ultraviolet laser element provided in this embodiment of the invention has the following advantages:

[0019] 1. By establishing specific hole mobility and effective electron mass distributions in the interlayer coherent hole tunneling layer, a highly periodic electrostatic potential is constructed. This allows for tuning of the Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers of the laser. This reduces the Mg acceptor activation energy of the p-type semiconductor and improves the ionization efficiency of Mg, thereby inducing interlayer coherent hole tunneling injection into the active layer. This improves the hole injection efficiency of the active layer, enhances the matching degree and uniformity of electrons and holes in the active layer, lowers the excitation threshold of the laser element, enhances the confinement factor and peak gain, and improves the optical power and slope efficiency of the laser element.

[0020] 2. The specific electron affinity distribution and peak rate electric field distribution of the interlayer coherent hole tunneling layer can be used to regulate the electric field distribution of the laser, suppress the QCSE quantum confinement Stark effect, enhance the carrier localization of the active layer, suppress carrier capture by dislocations, reduce electron leakage, improve the luminous efficiency and lasing gain of the quantum well, improve the aging lifetime of the laser, and reduce aging optical decay. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of a semiconductor ultraviolet laser element provided by the present invention.

[0022] Figure 2 The present invention provides a SIMS secondary ion mass spectrum of a semiconductor ultraviolet laser element.

[0023] The diagram shows: 100: Substrate; 101: Lower confinement layer; 102: Lower waveguide layer; 103: Active layer; 104: Upper waveguide layer; 105: Upper confinement layer; 106: Interlayer coherent hole tunneling layer; 106a: First interlayer coherent hole tunneling layer; 106b: Second interlayer coherent hole tunneling layer; 106c: Third interlayer coherent hole tunneling layer. Detailed Implementation

[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] To address the aforementioned issues, the following specific embodiments will provide a detailed description and explanation of a semiconductor ultraviolet-ultraviolet laser element provided in this application.

[0026] Reference Figure 1-2The present invention provides a semiconductor ultraviolet laser element, which, from bottom to top, comprises a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105, wherein an interlayer coherent hole tunneling layer 106 is provided between the upper waveguide layer 104 and the upper confinement layer 105.

[0027] The interlayer coherent hole tunneling layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0028] The interlayer coherent hole tunneling layer 106 includes a first interlayer coherent hole tunneling layer 106a, a second interlayer coherent hole tunneling layer 106b, and a third interlayer coherent hole tunneling layer 106c.

[0029] The hole mobility distribution of the first interlayer coherent hole tunneling layer 106a has the function y = A + B*x. 2 / sinx curve distribution; the hole mobility distribution of the second interlayer coherent hole tunneling layer 106b has the function y=C+E*e x / x First quadrant curve distribution; the hole mobility distribution of the third interlayer coherent hole tunneling layer 106c has the function y=F+G*x / e x Curve distribution.

[0030] The hole mobility of the first interlayer coherent hole tunneling layer 106a is d, the hole mobility of the second interlayer coherent hole tunneling layer 106b is e, and the hole mobility of the third interlayer coherent hole tunneling layer 106c is f, where: 5 < e < f < d < 1000 cm 2 / V / s.

[0031] The effective electron mass distribution of the first interlayer coherent hole tunneling layer 106a follows a function y = H + I*xJ*sinx curve; the effective electron mass distribution of the second interlayer coherent hole tunneling layer 106b follows a function y = K + L*e x The sinx curve distribution in the first quadrant; the effective electron mass distribution of the third interlayer coherent hole tunneling layer 106c has the function y = M + N*e. x +P*cosx distribution of curves in the second and third quadrants.

[0032] The effective electron mass of the first interlayer coherent hole tunneling layer 106a is g, the effective electron mass of the second interlayer coherent hole tunneling layer 106b is h, and the effective electron mass of the third interlayer coherent hole tunneling layer 106c is i, where: 0.01 < g < i < h < 5.

[0033] In summary, the specific hole mobility distribution and effective electron mass distribution of the interlayer coherent hole tunneling layer construct a highly periodic electrostatic potential, and tune the Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers of the laser. This reduces the Mg acceptor activation energy of the p-type semiconductor, improves the ionization efficiency of Mg, and thus induces interlayer coherent hole tunneling injection into the active layer of the laser. This improves the hole injection efficiency of the active layer, enhances the matching degree and uniformity of electrons and holes in the active layer, reduces the excitation threshold of the laser element, enhances the confinement factor and peak gain, and improves the optical power and slope efficiency of the laser element.

[0034] The electron affinity distribution of the first interlayer coherent hole tunneling layer 106a has the function y = O + Q*x 2 -R*e x The electron affinity distribution of the second interlayer coherent hole tunneling layer 106b has a function y = S + x + a / x (a > 0) in the third quadrant; the electron affinity distribution of the third interlayer coherent hole tunneling layer 106c has a function y = W + x 2 e x Curve distribution; the electron affinity of the first interlayer coherent hole tunneling layer 106a is j, the electron affinity of the second interlayer coherent hole tunneling layer 106b is k, and the electron affinity of the third interlayer coherent hole tunneling layer 106c is l, where: 0.1 < l < k < j < 10 (eV).

[0035] The peak velocity electric field distribution of the first interlayer coherent hole tunneling layer 106a has the function y = U + V*x 2 -e x Curved distribution; the peak velocity electric field distribution of the second interlayer coherent hole tunneling layer 106b has the function y = Z + e x The peak velocity electric field distribution of the third interlayer coherent hole tunneling layer 106c has the function y = T + xe. x Curve distribution; the peak velocity electric field of the first interlayer coherent hole tunneling layer 106a is m, the peak velocity electric field of the second interlayer coherent hole tunneling layer 106b is n, and the peak velocity electric field of the third interlayer coherent hole tunneling layer 106c is p, where: 20 < m < p < n < 1000 (kV / m).

[0036] In summary, the specific electron affinity distribution and peak rate electric field distribution of the interlayer coherent hole tunneling layer can modulate the electric field distribution of the laser, suppress the QCSE quantum confinement Stark effect, enhance the carrier localization of the active layer, suppress carrier capture by dislocations, reduce electron leakage, improve the luminous efficiency and lasing gain of the quantum well, improve the aging lifetime of the laser, and reduce aging optical decay.

[0037] The table below shows a comparison of data between a conventional laser and the laser of this invention.

[0038] Blue laser - Project Traditional lasers Laser of the present invention range of change Slope efficiency (W / A) 0.8 1.43 79％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.68 -72％ Optical power (W) 1.5 2.3 53％ 1000H aging and light decay 21％ 3.2％ -85％

[0039] In this invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, with a period number of 3 ≥ m ≥ 1. The well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The barrier layer can be any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0040] In this invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0041] In this invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, and sapphire / SiN composite substrate. x Sapphire / SiO2 / SiN x The composite substrate, or any one of the following: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0042] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A semiconductor laser device of violet-ultraviolet band, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that, The upper waveguide layer (104) and the upper confining layer (105) have an interlayer coherent hole tunneling layer (106) therebetween, The interlayer coherent hole tunneling layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond; The interlayer coherent hole tunneling layer (106) comprises a first interlayer coherent hole tunneling layer (106a), a second interlayer coherent hole tunneling layer (106b) and a third interlayer coherent hole tunneling layer (106c); The hole mobility of the first interlayer coherent hole tunneling layer (106a) is d, the hole mobility of the second interlayer coherent hole tunneling layer (106b) is e, and the hole mobility of the third interlayer coherent hole tunneling layer (106c) is f, wherein: 5 < e < f < d < 1000, units: cm 2 (V-s); The effective mass of the electron of the first interlayer coherent hole tunneling layer (106a) is g, the effective mass of the electron of the second interlayer coherent hole tunneling layer (106b) is h, and the effective mass of the electron of the third interlayer coherent hole tunneling layer (106c) is i, wherein: 0.01 < g < i < h < 5; The electron affinity of the first interlayer coherent hole tunneling layer (106a) is j, the electron affinity of the second interlayer coherent hole tunneling layer (106b) is k, and the electron affinity of the third interlayer coherent hole tunneling layer (106c) is l, wherein: 0.1 < l < k < j < 10, in eV; The peak rate electric field of the first interlayer coherent hole tunneling layer (106a) is m, the peak rate electric field of the second interlayer coherent hole tunneling layer (106b) is n, and the peak rate electric field of the third interlayer coherent hole tunneling layer (106c) is p, wherein: 20 < m < p < n < 1000, in kV / m.

2. A semiconductor laser device of the violet-ultraviolet wavelength band according to claim 1, wherein The hole mobility distribution of the first interlayer coherent hole tunneling layer (106a) has a function y1=A+B*x 2 / sinx curve distribution; the hole mobility distribution of the second interlayer coherent hole tunneling layer (106b) has a function y2=C+E*e x / x first quadrant curve distribution; the hole mobility distribution of the third interlayer coherent hole tunneling layer (106c) has a function y3=F+G*x / e x curve distribution.

3. The semiconductor laser device of claim 1, wherein the active layer is a p-type active layer. The electron effective mass distribution of the first interlayer coherent hole tunneling layer (106a) has a curve distribution of function y4=H+I*x-J*sinx; the electron effective mass distribution of the second interlayer coherent hole tunneling layer (106b) has a curve distribution of function y5=K+L*e x sinx in the first quadrant; and the electron effective mass distribution of the third interlayer coherent hole tunneling layer (106c) has a curve distribution of function y6=M+N*e x +P*cosx in the second three quadrants.

4. The semiconductor laser device of claim 1, wherein the active layer is a p-type active layer. The electron affinity energy distribution of the first interlayer coherent hole tunneling layer (106a) has a function y7=0+Q*x 2 -R*e x The electron affinity energy distribution of the second interlayer coherent hole tunneling layer (106b) has a function y8=S+x+a / x (a>0) 2 e x The electron affinity energy distribution of the third interlayer coherent hole tunneling layer (106c) has a function y9=W+x 5. The semiconductor laser device of claim 1, wherein the active layer is a multiple quantum well active layer. The peak velocity electric field profile of the first interlayer coherent hole tunneling layer (106a) has a function y 10 = U + V * x 2 - e x curve distribution; the peak velocity electric field profile of the second interlayer coherent hole tunneling layer (106b) has a function y 11 = Z + e x cos x first quadrant curve distribution; the peak velocity electric field profile of the third interlayer coherent hole tunneling layer (106c) has a function y 12 = T + x e x curve distribution.

6. The semiconductor laser device of claim 1, wherein the active region is configured to emit light in the violet to ultraviolet wavelength band. The active layer (103) is a periodic structure composed of well layers and barrier layers, the number of periods is 3≥m≥1, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, the thickness is 10-100 angstrom meters, the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, the thickness is 10-200 angstrom meters.

7. The semiconductor laser device of claim 1, wherein the active region is configured to emit light in the violet to ultraviolet wavelength band. The lower limiting layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper limiting layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN.

8. The semiconductor laser device of claim 1, wherein the active region is configured to emit light in the violet to ultraviolet wavelength band. The substrate (100) comprises sapphire, silicon, Ge, SiC, AIN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AIN composite substrate, sapphire / SiN x composite substrate, sapphire / SiO2 / SiN x composite substrate, sapphire / SiO2 / SiN MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 / LiGaO2 composite substrate.

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