Low-temperature sensitivity gain adjustable amplifying circuit

Abstract

The invention discloses a low-temperature sensitivity gain-adjustable amplifying circuit which comprises a temperature sensor, a voltage conversion module and a gain-adjustable amplifier. The temperature sensor is used for monitoring the temperature of the amplifier and outputting a corresponding temperature voltage signal according to the temperature of the amplifier; the voltage conversion module is connected with the temperature sensor and the amplifier and is used for outputting a corresponding bias voltage signal to the amplifier according to the temperature voltage signal; the temperature sensor is manufactured by adopting a CMOS process, and the amplifier is manufactured by adopting a GaAs process. The gain of the amplifier can be adjusted, and the gain characteristic of the amplifier is low in temperature sensitivity.

Description

Technical Field

[0001] The invention relates to the field of communications, and in particular to a gain-adjustable amplifier circuit with low temperature sensitivity. Background Art

[0002] GaAs technology is now often used in amplifier chip design in communication systems due to its excellent RF performance.

[0003] When building a radio frequency communication system at the board level, the gain of the amplifier needs to be adjusted according to the overall system requirements. However, after the gain of the amplifier using GaAs technology is adjusted, the conduction channel of the transistor inside the amplifier will change with temperature, resulting in the amplifier gain not being able to remain constant when the ambient temperature changes, which in turn causes the gain of the radio frequency communication system to change with temperature.

[0004] In RF communication systems with strict requirements on gain stability, the gain of the amplifier is required not to fluctuate with the ambient temperature. It is necessary to study a low temperature-sensitive gain-adjustable amplifier circuit that can adjust the gain of the amplifier and make the gain characteristics of the amplifier less sensitive to temperature. Summary of the invention

[0005] The object of the present invention is to provide a gain adjustable amplifier circuit with low temperature sensitivity, which can adjust the gain of the amplifier and make the gain characteristic of the amplifier less sensitive to temperature.

[0006] In order to achieve the above object, the solution of the present invention is: A low temperature sensitivity gain adjustable amplifier circuit comprises a temperature sensor, a voltage conversion module, and an amplifier with adjustable gain; the temperature sensor is used to monitor the temperature of the amplifier and output a corresponding temperature voltage signal according to the temperature of the amplifier; the voltage conversion module connects the temperature sensor and the amplifier, and the voltage conversion module is used to output a corresponding bias voltage signal to the amplifier according to the temperature voltage signal; the temperature sensor is manufactured by adopting a CMOS process, and the amplifier is manufactured by adopting a GaAs process.

[0007] The temperature sensor is connected to a temperature proportional adjustment unit, and the temperature proportional adjustment unit is used to adjust the correlation between the temperature voltage signal and the amplifier temperature.

[0008] The temperature sensor includes a resistor R3, a resistor R4, a transistor Q1, a transistor Q2, an operational amplifier OP2, and a current source; the areas of the transistor Q1 and the transistor Q2 are different, the first output end and the second output end of the current source can output currents of the same magnitude, the first output end of the current source is connected to the gate and collector of the transistor Q1 through the resistor R4, the second end of the current source is connected to the gate and collector of the transistor Q2, the gate and collector of the transistor Q1 are also connected to the inverting input end of the operational amplifier OP2 through the resistor R3, the gate and collector of the transistor Q2 are also connected to the non-inverting input end of the operational amplifier OP2, the emitter of the transistor Q1 and the emitter of the transistor Q2 are connected to the ground end of the temperature sensor, the ground end of the temperature sensor is grounded, the output end of the operational amplifier OP2 is connected to the output end of the temperature sensor, and the output end of the temperature sensor is used to output a temperature voltage signal; the temperature proportional adjustment unit includes a variable resistor R1, the first end of the variable resistor R1 is connected to the inverting input end of the operational amplifier OP2, and the second end of the variable resistor R1 is connected to the output end of the operational amplifier OP2.

[0009] The current source includes a MOS tube M1, a MOS tube M2 and an operational amplifier OP1. The parameters of the MOS tube M1 and the MOS tube M2 are the same. The drain of the MOS tube M1 and the drain of the MOS tube M2 are connected to the power supply end of the temperature sensor. The power supply end of the temperature sensor is connected to the control power supply VDD. The gate of the MOS tube M1 and the gate of the MOS tube M2 are connected to the output end of the operational amplifier OP1. The source of the MOS tube M1 and the non-inverting input end of the operational amplifier OP1 are connected to the first output end of the current source. The source of the MOS tube M2 and the inverting input end of the operational amplifier OP1 are connected to the second output end of the current source.

[0010] The voltage conversion module is connected to a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal.

[0011] The voltage conversion module includes a resistor R5, a resistor R6, a resistor R7 and an operational amplifier OP3, wherein the first end of the resistor R5 is connected to the power supply end of the voltage conversion module, the power supply end of the voltage conversion module is connected to the control power supply VDD, the second end of the resistor R5 is connected to the first end of the resistor R6, the second end of the resistor R6 and the first end of the resistor R7 are connected to the inverting input end of the operational amplifier OP3, the non-inverting input end of the operational amplifier OP3 is connected to the input end of the voltage conversion module, the input end of the voltage conversion module is connected to the temperature voltage signal, the output end of the operational amplifier OP3 and the second end of the resistor R7 are connected to the output end of the voltage conversion module, and the output end of the voltage conversion module is used to output a bias voltage signal; the voltage ratio adjustment unit includes a variable resistor R2, the first end of the variable resistor R2 is connected to the second end of the resistor R5 and the first end of the resistor R6, and the second end of the variable resistor R2 is grounded.

[0012] The amplifier includes a resistor R8, a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, an inductor L2, a PHEMT tube M3 and a PHEMT tube M4. The first end of the inductor L1 is connected to the first DC bias end of the amplifier, and the first DC bias end of the amplifier is used to access the bias voltage signal. The second end of the inductor L1 and the first end of the capacitor C2 are connected to the gate of the PHEMT tube M3. The second end of the capacitor C2 is connected to the input end of the amplifier. The source of the PHEMT tube M3 is connected to the first end of the resistor R8 and the first end of the capacitor C1. The second end of the resistor R8 The second end of the capacitor C1 is connected to the ground end of the amplifier, the ground end of the amplifier is grounded, the drain of the PHEMT tube M3 is connected to the source of the PHEMT tube M4, the gate of the PHEMT tube M4 is connected to the second DC bias end of the amplifier, the second DC bias end of the amplifier is used to access the DC bias voltage VG, the drain of the PHEMT tube M4 is connected to the first end of the inductor L2 and the first end of the capacitor C3, the second end of the inductor L2 is connected to the power supply end of the amplifier, the power supply end of the amplifier is connected to the control power supply VDD, and the second end of the capacitor C3 is connected to the output end of the amplifier.

[0013] The voltage conversion module includes a MOS tube M5, a drain of the MOS tube M5 is connected to a power supply end of the voltage conversion module, the power supply end of the voltage conversion module is connected to a control power supply VDD, a gate of the MOS tube M5 is connected to an input end of the voltage conversion module, the input end of the voltage conversion module is connected to a temperature voltage signal, a source of the MOS tube M5 is connected to an output end of the voltage conversion module, and the output end of the voltage conversion module is used to output a bias voltage signal; the voltage ratio adjustment unit includes a variable resistor R10, a first end of the variable resistor R10 is connected to a source of the MOS tube M5, and a second end of the variable resistor R10 is grounded.

[0014] The amplifier includes a resistor R11, a capacitor C4, a capacitor C5, a capacitor C6, an inductor L3, an inductor L4 and a PHEMT tube M6. The first end of the inductor L3 is connected to a DC bias end of the amplifier, and the DC bias end of the amplifier is used to access a bias voltage signal. The second end of the inductor L3 and the first end of the capacitor C5 are connected to a gate of the PHEMT tube M6. The second end of the capacitor C5 is connected to an input end of the amplifier. The source of the PHEMT tube M6 is connected to a first end of the resistor R11 and a first end of the capacitor C4. The second end of the resistor R11 and the second end of the capacitor C4 are connected to a ground end of the amplifier. The ground end of the amplifier is grounded. The drain of the PHEMT tube M6 is connected to a first end of the inductor L4 and a first end of the capacitor C6. The second end of the inductor L4 is connected to a power supply end of the amplifier. The power supply end of the amplifier is connected to a control power supply VDD. The second end of the capacitor C6 is connected to an output end of the amplifier.

[0015] The voltage conversion module is manufactured using CMOS technology.

[0016] After adopting the above scheme, when the low temperature sensitivity gain adjustable amplifier circuit of the present invention is used, the temperature sensor monitors the temperature of the amplifier and outputs a corresponding temperature voltage signal according to the temperature of the amplifier, and the voltage conversion module outputs a corresponding bias voltage signal to the amplifier according to the temperature voltage signal, thereby adjusting the gain of the amplifier. As can be seen from the foregoing, the present invention can automatically adjust the gain of the amplifier according to the temperature of the amplifier, thereby reducing the sensitivity of the gain characteristic of the amplifier to temperature. Among them, the temperature sensor is manufactured using the CMOS process, so that the temperature sensor has the characteristics of high sensitivity, and then the temperature sensor can sensitively detect the temperature change of the amplifier, and then the present invention can accurately adjust the gain of the amplifier according to the temperature change to ensure the constancy of the gain of the amplifier; and the amplifier is manufactured using the GaAs process, so that the amplifier has better RF performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a principle block diagram of the present invention.

[0018] Figure 2 This is a schematic diagram of the first embodiment of the present invention.

[0019] Figure 3 This is a schematic diagram of the second embodiment of the present invention. DETAILED DESCRIPTION

[0020] In order to further explain the technical solution of the present invention, the present invention is described in detail below through specific embodiments.

[0021] like Figure 1 As shown, the present invention discloses a low temperature sensitivity gain adjustable amplifier circuit, which includes a temperature sensor, a voltage conversion module, and an amplifier with adjustable gain; wherein the temperature sensor is used to monitor the temperature of the amplifier and output a corresponding temperature voltage signal according to the temperature of the amplifier, and the temperature sensor is manufactured using a CMOS process; the voltage conversion module connects the temperature sensor and the amplifier, and the voltage conversion module is used to output a corresponding bias voltage signal to the amplifier according to the temperature voltage signal, and the amplifier is manufactured using a GaAs process.

[0022] When the low temperature sensitivity gain adjustable amplifier circuit of the present invention is used, the temperature sensor monitors the temperature of the amplifier and outputs a corresponding temperature voltage signal according to the temperature of the amplifier, and the voltage conversion module outputs a corresponding bias voltage signal to the amplifier according to the temperature voltage signal, thereby adjusting the gain of the amplifier. As can be seen from the foregoing, the present invention can automatically adjust the gain of the amplifier according to the temperature of the amplifier, thereby reducing the sensitivity of the gain characteristic of the amplifier to temperature. Among them, the temperature sensor is manufactured using the CMOS process, so that the temperature sensor has the characteristics of high sensitivity, and then the temperature sensor can sensitively detect the temperature change of the amplifier, and then the present invention can accurately adjust the gain of the amplifier according to the temperature change, ensuring the constancy of the gain of the amplifier; and the voltage conversion module can also be manufactured using the CMOS process, which also helps the present invention to accurately adjust the gain of the amplifier according to the temperature change. The amplifier is manufactured using the GaAs process, so that the amplifier has better RF performance.

[0023] In order to further explain the technical solution of the present invention, the present invention is described in detail below through specific embodiments.

[0024] Embodiment 1: Cooperate Figure 2 As shown, in the first embodiment of the present invention, the temperature sensor is connected to a temperature proportional adjustment unit, and the temperature proportional adjustment unit is used to adjust the correlation between the temperature voltage signal and the amplifier temperature to adapt to amplifiers with different gain adjustments.

[0025] In the first embodiment of the present invention, the temperature sensor includes a resistor R3, a resistor R4, a transistor Q1, a transistor Q2, an operational amplifier OP2, and a current source; the areas of the transistor Q1 and the transistor Q2 are different, the first output end and the second output end of the current source can output currents of the same magnitude, the first output end of the current source is connected to the gate and collector of the transistor Q1 through the resistor R4, the second end of the current source is connected to the gate and collector of the transistor Q2, and the gate and collector of the transistor Q1 are also connected to the inverting input of the operational amplifier OP2 through the resistor R3. The gate and collector of the transistor Q2 are also connected to the in-phase input terminal of the operational amplifier OP2, the emitter of the transistor Q1 and the emitter of the transistor Q2 are connected to the ground terminal of the temperature sensor, the ground terminal of the temperature sensor is grounded, the output terminal of the operational amplifier OP2 is connected to the output terminal of the temperature sensor, and the output terminal of the temperature sensor is used to output a temperature voltage signal; and the temperature proportional adjustment unit includes a variable resistor R1, a first end of the variable resistor R1 is connected to the inverting input terminal of the operational amplifier OP2, and a second end of the variable resistor R1 is connected to the output terminal of the operational amplifier OP2.

[0026] In the first embodiment of the present invention, the correlation between the temperature voltage signal output by the temperature sensor and the temperature of the amplifier is: ; Among them, V1 is the voltage value of the temperature voltage signal, T is the temperature value of the amplifier, K is the Boltzmann constant, q is the charge of the electron, N is the area ratio of the transistor Q1 to the transistor Q2, r1 is the resistance value of the variable resistor R1, r3 is the resistance value of the resistor R3, and Vbe1 is the voltage difference between the base and the collector of the transistor Q1. It can be seen from the above that the correlation between the temperature voltage signal and the amplifier temperature can be adjusted by adjusting the resistance value of the variable resistor R1.

[0027] In the first embodiment of the present invention, the current source may include a MOS transistor M1, a MOS transistor M2 and an operational amplifier OP1, the parameters of the MOS transistor M1 and the MOS transistor M2 are the same, the drain of the MOS transistor M1 and the drain of the MOS transistor M2 are connected to the power supply end of the temperature sensor, the power supply end of the temperature sensor is connected to the control power supply VDD, the gate of the MOS transistor M1 and the gate of the MOS transistor M2 are connected to the output end of the operational amplifier OP1, the source of the MOS transistor M1 and the non-inverting input end of the operational amplifier OP1 are connected to the first output end of the current source, and the source of the MOS transistor M2 and the inverting input end of the operational amplifier OP1 are connected to the second output end of the current source.

[0028] In the first embodiment of the present invention, the voltage conversion module is connected to a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal to adapt to amplifiers with different gain adjustments.

[0029] In the first embodiment of the present invention, the voltage conversion module includes a resistor R5, a resistor R6, a resistor R7 and an operational amplifier OP3, the first end of the resistor R5 is connected to the power supply end of the voltage conversion module, the power supply end of the voltage conversion module is connected to the control power supply VDD, the second end of the resistor R5 is connected to the first end of the resistor R6, the second end of the resistor R6 and the first end of the resistor R7 are connected to the inverting input end of the operational amplifier OP3, the non-inverting input end of the operational amplifier OP3 is connected to the input end of the voltage conversion module, the input end of the voltage conversion module is connected to the temperature voltage signal, the output end of the operational amplifier OP3 and the second end of the resistor R7 are connected to the output end of the voltage conversion module, and the output end of the voltage conversion module is used to output the bias voltage signal; and the voltage ratio adjustment unit includes a variable resistor R2, the first end of the variable resistor R2 is connected to the second end of the resistor R5 and the first end of the resistor R6, and the second end of the variable resistor R2 is grounded.

[0030] In the first embodiment of the present invention, the correlation between the bias voltage signal of the voltage conversion module and the temperature voltage signal output by the temperature sensor is: ; Wherein, V2 is the voltage value of the bias voltage signal, vdd is the voltage value of the control power supply VDD, r2 is the resistance value of the variable resistor R2, r5 is the resistance value of the resistor R5, r6 is the resistance value of the resistor R6, and r7 is the resistance value of the resistor R7. As can be seen from the foregoing, the correlation between the bias voltage signal and the temperature voltage signal can be adjusted by adjusting the resistance value of the variable resistor R2.

[0031] In the first embodiment of the present invention, the amplifier adopts a common-source common-gate amplifier, and specifically the amplifier includes a resistor R8, a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, an inductor L2, a PHEMT tube M3 and a PHEMT tube M4, the PHEMT tube M3 and the PHEMT tube M4 are both PHEMT tubes, the first end of the inductor L1 is connected to the first DC bias end of the amplifier, the first DC bias end of the amplifier is used to access the bias voltage signal, the second end of the inductor L1 and the first end of the capacitor C2 are connected to the gate of the PHEMT tube M3, the second end of the capacitor C2 is connected to the input end of the amplifier, and the source of the PHEMT tube M3 is connected to the The first end of the resistor R8 and the first end of the capacitor C1 are connected, the second end of the resistor R8 and the second end of the capacitor C1 are connected to the ground end of the amplifier, the ground end of the amplifier is grounded, the drain of the PHEMT tube M3 is connected to the source of the PHEMT tube M4, the gate of the PHEMT tube M4 is connected to the second DC bias end of the amplifier, the second DC bias end of the amplifier is used to access the DC bias voltage VG, the drain of the PHEMT tube M4 is connected to the first end of the inductor L2 and the first end of the capacitor C3, the second end of the inductor L2 is connected to the power supply end of the amplifier, the power supply end of the amplifier is connected to the control power supply VDD, and the second end of the capacitor C3 is connected to the output end of the amplifier. Among them, the MOS tube M3 works in the saturation region, and the MOS tube M4 also works in the saturation region. By adjusting the gate voltage of the MOS tube M3, the transconductance of the MOS tube M3 can be directly changed, thereby directly changing the amplifier gain.

[0032] Embodiment 2: Cooperate Figure 3 As shown, in the second embodiment of the present invention, the temperature sensor is also connected to a temperature proportional adjustment unit, and the temperature proportional adjustment unit is used to adjust the correlation between the temperature voltage signal and the amplifier temperature to adapt to amplifiers with different gain adjustments. The specific structure of the temperature sensor and the temperature proportional adjustment unit of the second embodiment is the same as that of the first embodiment, and will not be elaborated here.

[0033] In the second embodiment of the present invention, the voltage conversion module is connected to a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal to adapt to amplifiers with different gain adjustments. Specifically, the voltage conversion module includes a MOS tube M5, the drain of the MOS tube M5 is connected to the power supply end of the voltage conversion module, the power supply end of the voltage conversion module is connected to the control power supply VDD, the gate of the MOS tube M5 is connected to the input end of the voltage conversion module, the input end of the voltage conversion module is connected to the temperature voltage signal, the source of the MOS tube M5 is connected to the output end of the voltage conversion module, and the output end of the voltage conversion module is used to output the bias voltage signal; and the voltage ratio adjustment unit includes a variable resistor R10, the first end of the variable resistor R10 is connected to the source of the MOS tube M5, and the second end of the variable resistor R10 is grounded, and the correlation between the bias voltage signal and the temperature voltage signal can be adjusted by adjusting the resistance value of R10.

[0034] In the second embodiment of the present invention, the amplifier adopts a common source amplifier; specifically, the amplifier includes a resistor R11, a capacitor C4, a capacitor C5, a capacitor C6, an inductor L3, an inductor L4 and a PHEMT tube M6, the PHEMT tube M6 is a PHEMT tube, a first end of the inductor L3 is connected to a DC bias end of the amplifier, the DC bias end of the amplifier is used to access a bias voltage signal, a second end of the inductor L3 and a first end of the capacitor C5 are connected to a gate of the PHEMT tube M6, a second end of the capacitor C5 is connected to an input end of the amplifier, a source of the PHEMT tube M6 is connected to a first end of the resistor R11 and a first end of the capacitor C4, a second end of the resistor R11 and a second end of the capacitor C4 are connected to a ground end of the amplifier, the ground end of the amplifier is grounded, a drain of the PHEMT tube M6 is connected to a first end of the inductor L4 and a first end of the capacitor C6, a second end of the inductor L4 is connected to a power supply end of the amplifier, the power supply end of the amplifier is connected to a control power supply VDD, and a second end of the capacitor C6 is connected to an output end of the amplifier. The PHEMT tube M6 works in the saturation region. By adjusting the gate voltage of the PHEMT tube M6 , the transconductance of the PHEMT tube M6 can be directly changed, thereby directly changing the amplifier gain.

[0035] The above embodiments and drawings do not limit the product form and style of the present invention. Any appropriate changes or modifications made by ordinary technicians in the relevant technical field should be deemed to be within the patent scope of the present invention.

Claims

1. A low temperature sensitivity gain adjustable amplifier circuit, characterized in that: It includes a temperature sensor, a voltage conversion module, and an amplifier with adjustable gain; The temperature sensor is used to monitor the temperature of the amplifier and output a corresponding temperature voltage signal according to the temperature of the amplifier; The voltage conversion module is connected to the temperature sensor and the amplifier, and is used to output a corresponding bias voltage signal to the amplifier according to the temperature voltage signal; The temperature sensor is manufactured using CMOS technology, and the amplifier is manufactured using GaAs technology.

2. The low temperature sensitivity gain adjustable amplifier circuit as claimed in claim 1, characterized in that: The temperature sensor is connected to a temperature proportional adjustment unit, and the temperature proportional adjustment unit is used to adjust the correlation between the temperature voltage signal and the amplifier temperature.

3. The low temperature sensitivity gain adjustable amplifier circuit as claimed in claim 2, characterized in that: The temperature sensor comprises a resistor R3, a resistor R4, a transistor Q1, a transistor Q2, an operational amplifier OP2, and a current source; the areas of the transistor Q1 and the transistor Q2 are different, the first output end and the second output end of the current source can output currents of the same magnitude, the first output end of the current source is connected to the gate and collector of the transistor Q1 through the resistor R4, the second end of the current source is connected to the gate and collector of the transistor Q2, the gate and collector of the transistor Q1 are also connected to the inverting input end of the operational amplifier OP2 through the resistor R3, the gate and collector of the transistor Q2 are also connected to the non-inverting input end of the operational amplifier OP2, the emitter of the transistor Q1 and the emitter of the transistor Q2 are connected to the ground end of the temperature sensor, the ground end of the temperature sensor is grounded, the output end of the operational amplifier OP2 is connected to the output end of the temperature sensor, and the output end of the temperature sensor is used to output a temperature voltage signal; The temperature proportional adjustment unit includes a variable resistor R1 , a first end of the variable resistor R1 is connected to an inverting input end of an operational amplifier OP2 , and a second end of the variable resistor R1 is connected to an output end of the operational amplifier OP2 .

4. The low temperature sensitivity gain adjustable amplifier circuit as claimed in claim 3, characterized in that: The current source includes a MOS tube M1, a MOS tube M2 and an operational amplifier OP1. The parameters of the MOS tube M1 and the MOS tube M2 are the same. The drain of the MOS tube M1 and the drain of the MOS tube M2 are connected to the power supply end of the temperature sensor. The power supply end of the temperature sensor is connected to the control power supply VDD. The gate of the MOS tube M1 and the gate of the MOS tube M2 are connected to the output end of the operational amplifier OP1. The source of the MOS tube M1 and the non-inverting input end of the operational amplifier OP1 are connected to the first output end of the current source. The source of the MOS tube M2 and the inverting input end of the operational amplifier OP1 are connected to the second output end of the current source.

5. The low temperature sensitivity gain adjustable amplifier circuit as claimed in claim 1, characterized in that: The voltage conversion module is connected to a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal.

6. The low temperature sensitivity gain adjustable amplifier circuit as claimed in claim 5, characterized in that: The voltage conversion module includes a resistor R5, a resistor R6, a resistor R7 and an operational amplifier OP3, wherein a first end of the resistor R5 is connected to a power supply end of the voltage conversion module, and the power supply end of the voltage conversion module is connected to a control power supply VDD, a second end of the resistor R5 is connected to a first end of the resistor R6, a second end of the resistor R6 and a first end of the resistor R7 are connected to an inverting input end of the operational amplifier OP3, a non-inverting input end of the operational amplifier OP3 is connected to an input end of the voltage conversion module, and a temperature voltage signal is connected to the input end of the voltage conversion module, an output end of the operational amplifier OP3 and a second end of the resistor R7 are connected to an output end of the voltage conversion module, and the output end of the voltage conversion module is used to output a bias voltage signal; The voltage ratio adjustment unit includes a variable resistor R2, a first end of the variable resistor R2 is connected to the second end of the resistor R5 and the first end of the resistor R6, and a second end of the variable resistor R2 is grounded.

7. The low temperature sensitivity gain adjustable amplifier circuit according to claim 1 or 6, characterized in that: The amplifier includes a resistor R8, a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, an inductor L2, a PHEMT tube M3 and a PHEMT tube M4. The first end of the inductor L1 is connected to the first DC bias end of the amplifier, and the first DC bias end of the amplifier is used to access the bias voltage signal. The second end of the inductor L1 and the first end of the capacitor C2 are connected to the gate of the PHEMT tube M3. The second end of the capacitor C2 is connected to the input end of the amplifier. The source of the PHEMT tube M3 is connected to the first end of the resistor R8 and the first end of the capacitor C1. The second end of the resistor R8 The second end of the capacitor C1 is connected to the ground end of the amplifier, the ground end of the amplifier is grounded, the drain of the PHEMT tube M3 is connected to the source of the PHEMT tube M4, the gate of the PHEMT tube M4 is connected to the second DC bias end of the amplifier, the second DC bias end of the amplifier is used to access the DC bias voltage VG, the drain of the PHEMT tube M4 is connected to the first end of the inductor L2 and the first end of the capacitor C3, the second end of the inductor L2 is connected to the power supply end of the amplifier, the power supply end of the amplifier is connected to the control power supply VDD, and the second end of the capacitor C3 is connected to the output end of the amplifier.

8. The low temperature sensitivity gain adjustable amplifier circuit as claimed in claim 5, characterized in that: The voltage conversion module includes a MOS tube M5, the drain of the MOS tube M5 is connected to the power supply end of the voltage conversion module, the power supply end of the voltage conversion module is connected to the control power supply VDD, the gate of the MOS tube M5 is connected to the input end of the voltage conversion module, the input end of the voltage conversion module is connected to the temperature voltage signal, the source of the MOS tube M5 is connected to the output end of the voltage conversion module, and the output end of the voltage conversion module is used to output the bias voltage signal; The voltage ratio adjustment unit includes a variable resistor R10, a first end of the variable resistor R10 is connected to the source of the MOS tube M5, and a second end of the variable resistor R10 is grounded.

9. The low temperature sensitivity gain adjustable amplifier circuit according to claim 1 or 8, characterized in that: The amplifier includes a resistor R11, a capacitor C4, a capacitor C5, a capacitor C6, an inductor L3, an inductor L4 and a PHEMT tube M6. The first end of the inductor L3 is connected to a DC bias end of the amplifier, and the DC bias end of the amplifier is used to access a bias voltage signal. The second end of the inductor L3 and the first end of the capacitor C5 are connected to a gate of the PHEMT tube M6. The second end of the capacitor C5 is connected to an input end of the amplifier. The source of the PHEMT tube M6 is connected to a first end of the resistor R11 and a first end of the capacitor C4. The second end of the resistor R11 and the second end of the capacitor C4 are connected to a ground end of the amplifier. The ground end of the amplifier is grounded. The drain of the PHEMT tube M6 is connected to a first end of the inductor L4 and a first end of the capacitor C6. The second end of the inductor L4 is connected to a power supply end of the amplifier. The power supply end of the amplifier is connected to a control power supply VDD. The second end of the capacitor C6 is connected to an output end of the amplifier.

10. The low temperature sensitivity gain adjustable amplifier circuit according to claim 1 or 5, characterized in that: The voltage conversion module is manufactured using CMOS technology.

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