Low-temperature-sensitivity gain-adjustable amplifier circuit

Abstract

The present invention discloses a low-temperature-sensitivity gain-adjustable amplifier circuit, which includes a temperature sensor, a voltage conversion module, and an amplifier with adjustable gain; the temperature sensor is used to monitor the temperature of the amplifier and output a corresponding temperature voltage signal according to the temperature of the amplifier; the voltage conversion module is connected to the temperature sensor and the amplifier, and the voltage conversion module is used to output a corresponding bias voltage signal to the amplifier according to the temperature voltage signal; the temperature sensor is manufactured by CMOS process, and the amplifier is manufactured by GaAs process. The present invention can adjust the gain of the amplifier and make the gain characteristic of the amplifier have low sensitivity to temperature.

Description

Technical Field

[0001] The present invention relates to the field of communications, and particularly to a gain-adjustable amplifier circuit with low temperature sensitivity. Background Art

[0002] The GaAs process is often used in the design of amplifier chips in communication systems due to its excellent radio frequency performance.

[0003] When building a radio frequency communication system at the board level, it is necessary to adjust the gain of the amplifier according to the requirements of the overall system. After the gain of the amplifier using the GaAs process is adjusted, since the conductive channel of the transistor inside the amplifier changes with temperature, the gain of the amplifier cannot remain constant when the ambient temperature changes, and thus the gain of the radio frequency communication system changes with temperature.

[0004] In a radio frequency communication system with strict requirements for gain stability, it is required that the gain of the amplifier does not fluctuate with the ambient temperature. It is necessary to study a gain-adjustable amplifier circuit with low temperature sensitivity, which can adjust the gain of the amplifier and make the gain characteristic of the amplifier less sensitive to temperature. Summary of the Invention

[0005] The purpose of the present invention is to provide a gain-adjustable amplifier circuit with low temperature sensitivity, which can adjust the gain of the amplifier and make the gain characteristic of the amplifier less sensitive to temperature.

[0006] To achieve the above object, the solution of the present invention is as follows:

[0007] A gain-adjustable amplifier circuit with low temperature sensitivity includes a temperature sensor, a voltage conversion module, and an amplifier with adjustable gain; the temperature sensor is used to monitor the temperature of the amplifier and output a corresponding temperature voltage signal according to the temperature of the amplifier; the voltage conversion module is connected to the temperature sensor and the amplifier, and the voltage conversion module is used to output a corresponding bias voltage signal to the amplifier according to the temperature voltage signal; the temperature sensor is manufactured using the CMOS process, and the amplifier is manufactured using the GaAs process.

[0008] The temperature sensor is connected with a temperature ratio adjustment unit, and the temperature ratio adjustment unit is used to adjust the correlation between the temperature voltage signal and the temperature of the amplifier.

[0009] The temperature sensor includes a resistor R3, a resistor R4, a triode Q1, a triode Q2, an operational amplifier OP2, and a current source; the areas of the triode Q1 and the triode Q2 are different, the first output terminal and the second output terminal of the current source can output currents with the same magnitude, the first output terminal of the current source is connected to the gate and the collector of the triode Q1 through the resistor R4, the second terminal of the current source is connected to the gate and the collector of the triode Q2, the gate and the collector of the triode Q1 are also connected to the inverting input terminal of the operational amplifier OP2 through the resistor R3, the gate and the collector of the triode Q2 are also connected to the non-inverting input terminal of the operational amplifier OP2, the emitter of the triode Q1 and the emitter of the triode Q2 are connected to the ground terminal of the temperature sensor, the ground terminal of the temperature sensor is grounded, the output terminal of the operational amplifier OP2 is connected to the output terminal of the temperature sensor, and the output terminal of the temperature sensor is used to output a temperature voltage signal; the temperature ratio adjustment unit includes a variable resistor R1, the first terminal of the variable resistor R1 is connected to the inverting input terminal of the operational amplifier OP2, and the second terminal of the variable resistor R1 is connected to the output terminal of the operational amplifier OP2.

[0010] The current source includes a MOS transistor M1, a MOS transistor M2, and an operational amplifier OP1. The parameters of the MOS transistor M1 and the MOS transistor M2 are the same. The drain of the MOS transistor M1 and the drain of the MOS transistor M2 are connected to the power supply terminal of the temperature sensor, and the power supply terminal of the temperature sensor is connected to the control power supply VDD. The gate of the MOS transistor M1 and the gate of the MOS transistor M2 are connected to the output terminal of the operational amplifier OP1. The source of the MOS transistor M1 and the non-inverting input terminal of the operational amplifier OP1 are connected to the first output terminal of the current source. The source of the MOS transistor M2 and the inverting input terminal of the operational amplifier OP1 are connected to the second output terminal of the current source.

[0011] The voltage conversion module is connected with a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal.

[0012] The voltage conversion module includes a resistor R5, a resistor R6, a resistor R7, and an operational amplifier OP3. The first terminal of the resistor R5 is connected to the power supply terminal of the voltage conversion module, and the power supply terminal of the voltage conversion module is connected to the control power supply VDD. The second terminal of the resistor R5 is connected to the first terminal of the resistor R6. The second terminal of the resistor R6 and the first terminal of the resistor R7 are connected to the inverting input terminal of the operational amplifier OP3. The non-inverting input terminal of the operational amplifier OP3 is connected to the input terminal of the voltage conversion module, and the input terminal of the voltage conversion module is connected to the temperature voltage signal. The output terminal of the operational amplifier OP3 and the second terminal of the resistor R7 are connected to the output terminal of the voltage conversion module, and the output terminal of the voltage conversion module is used to output a bias voltage signal; the voltage ratio adjustment unit includes a variable resistor R2, the first terminal of the variable resistor R2 is connected to the second terminal of the resistor R5 and the first terminal of the resistor R6, and the second terminal of the variable resistor R2 is grounded.

[0013] The amplifier includes a resistor R8, a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, an inductor L2, a PHEMT transistor M3, and a PHEMT transistor M4. The first end of the inductor L1 is connected to the first DC bias terminal of the amplifier, and the first DC bias terminal of the amplifier is used to access a bias voltage signal. The second end of the inductor L1 and the first end of the capacitor C2 are connected to the gate of the PHEMT transistor M3. The second end of the capacitor C2 is connected to the input terminal of the amplifier. The source of the PHEMT transistor M3 is connected to the first end of the resistor R8 and the first end of the capacitor C1. The second end of the resistor R8 and the second end of the capacitor C1 are connected to the ground terminal of the amplifier, and the ground terminal of the amplifier is grounded. The drain of the PHEMT transistor M3 is connected to the source of the PHEMT transistor M4. The gate of the PHEMT transistor M4 is connected to the second DC bias terminal of the amplifier, and the second DC bias terminal of the amplifier is used to access a DC bias voltage VG. The drain of the PHEMT transistor M4 is connected to the first end of the inductor L2 and the first end of the capacitor C3. The second end of the inductor L2 is connected to the power supply terminal of the amplifier, and the power supply terminal of the amplifier accesses a control power supply VDD. The second end of the capacitor C3 is connected to the output terminal of the amplifier.

[0014] The voltage conversion module includes a MOS transistor M5. The drain of the MOS transistor M5 is connected to the power supply terminal of the voltage conversion module, and the power supply terminal of the voltage conversion module accesses a control power supply VDD. The gate of the MOS transistor M5 is connected to the input terminal of the voltage conversion module, and the input terminal of the voltage conversion module accesses a temperature voltage signal. The source of the MOS transistor M5 is connected to the output terminal of the voltage conversion module, and the output terminal of the voltage conversion module is used to output a bias voltage signal. The voltage ratio adjustment unit includes a variable resistor R10. The first end of the variable resistor R10 is connected to the source of the MOS transistor M5, and the second end of the variable resistor R10 is grounded.

[0015] The amplifier includes a resistor R11, a capacitor C4, a capacitor C5, a capacitor C6, an inductor L3, an inductor L4, and a PHEMT transistor M6. The first end of the inductor L3 is connected to the DC bias terminal of the amplifier, and the DC bias terminal of the amplifier is used to access a bias voltage signal. The second end of the inductor L3 and the first end of the capacitor C5 are connected to the gate of the PHEMT transistor M6. The second end of the capacitor C5 is connected to the input terminal of the amplifier. The source of the PHEMT transistor M6 is connected to the first end of the resistor R11 and the first end of the capacitor C4. The second end of the resistor R11 and the second end of the capacitor C4 are connected to the ground terminal of the amplifier, and the ground terminal of the amplifier is grounded. The drain of the PHEMT transistor M6 is connected to the first end of the inductor L4 and the first end of the capacitor C6. The second end of the inductor L4 is connected to the power supply terminal of the amplifier, and the power supply terminal of the amplifier accesses a control power supply VDD. The second end of the capacitor C6 is connected to the output terminal of the amplifier.

[0016] The voltage conversion module is fabricated using CMOS technology.

[0017] After adopting the above solution, when the low temperature sensitivity gain adjustable amplifier circuit of the present invention is applied, the temperature sensor monitors the temperature of the amplifier and outputs a corresponding temperature voltage signal according to the temperature of the amplifier. The voltage conversion module then outputs a corresponding bias voltage signal to the amplifier according to the temperature voltage signal, thereby adjusting the gain of the amplifier. As can be seen from the foregoing, the present invention can automatically adjust the gain of the amplifier according to the temperature of the amplifier, thereby reducing the sensitivity of the gain characteristic of the amplifier to temperature. Among them, the temperature sensor is manufactured by CMOS process, so that the temperature sensor has the characteristic of high sensitivity, and then the temperature sensor can sensitively detect the temperature change of the amplifier, and then the present invention can accurately adjust the gain of the amplifier according to the temperature change to ensure the constancy of the gain of the amplifier; while the amplifier is manufactured by GaAs process, so that the amplifier has better radio frequency performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic block diagram of the present invention.

[0019] Figure 2 It is a schematic diagram of Embodiment 1 of the present invention.

[0020] Figure 3 It is a schematic diagram of Embodiment 2 of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0021] In order to further explain the technical solution of the present invention, the present invention will be described in detail below through specific embodiments.

[0022] As Figure 1 shown, the present invention discloses a low temperature sensitivity gain adjustable amplifier circuit, which includes a temperature sensor, a voltage conversion module, and an amplifier with adjustable gain; wherein, the temperature sensor is used to monitor the temperature of the amplifier and output a corresponding temperature voltage signal according to the temperature of the amplifier, and the temperature sensor is manufactured by CMOS process; the voltage conversion module is connected to the temperature sensor and the amplifier, and the voltage conversion module is used to output a corresponding bias voltage signal to the amplifier according to the temperature voltage signal, and the amplifier is manufactured by GaAs process.

[0023] When the low-temperature-sensitivity gain-adjustable amplifier circuit of the present invention is applied, the temperature sensor monitors the temperature of the amplifier and outputs a corresponding temperature voltage signal according to the temperature of the amplifier. The voltage conversion module then outputs a corresponding bias voltage signal to the amplifier according to the temperature voltage signal, thereby adjusting the gain of the amplifier. As can be seen from the foregoing, the present invention can automatically adjust the gain of the amplifier according to the temperature of the amplifier, thereby reducing the sensitivity of the gain characteristic of the amplifier to temperature. Among them, the temperature sensor is manufactured by CMOS process, so that the temperature sensor has the characteristic of high sensitivity, and then the temperature sensor can sensitively detect the temperature change of the amplifier, and then the present invention can accurately adjust the gain of the amplifier according to the temperature change to ensure the constancy of the gain of the amplifier; and the voltage conversion module can also be manufactured by CMOS process, which also helps the present invention to accurately adjust the gain of the amplifier according to the temperature change. The amplifier is manufactured by GaAs process, so that the amplifier has better radio frequency performance.

[0024] In order to further explain the technical solution of the present invention, the present invention will be elaborated in detail below through specific embodiments.

[0025] Embodiment 1:

[0026] Cooperate with Figure 2 As shown, in Embodiment 1 of the present invention, the temperature sensor is connected to a temperature proportional adjustment unit, and the temperature proportional adjustment unit is used to adjust the correlation between the temperature voltage signal and the temperature of the amplifier to adapt to amplifiers with different gain adjustments.

[0027] In Embodiment 1 of the present invention, the temperature sensor includes a resistor R3, a resistor R4, a triode Q1, a triode Q2, an operational amplifier OP2, and a current source; the areas of the triode Q1 and the triode Q2 are different, and the first output terminal and the second output terminal of the current source can output currents of the same magnitude. The first output terminal of the current source is connected to the gate and collector of the triode Q1 through the resistor R4, the second terminal of the current source is connected to the gate and collector of the triode Q2, the gate and collector of the triode Q1 are also connected to the inverting input terminal of the operational amplifier OP2 through the resistor R3, the gate and collector of the triode Q2 are also connected to the non-inverting input terminal of the operational amplifier OP2, the emitter of the triode Q1 and the emitter of the triode Q2 are connected to the ground terminal of the temperature sensor, the ground terminal of the temperature sensor is grounded, the output terminal of the operational amplifier OP2 is connected to the output terminal of the temperature sensor, and the output terminal of the temperature sensor is used to output a temperature voltage signal; and the temperature proportional adjustment unit includes a variable resistor R1, the first terminal of the variable resistor R1 is connected to the inverting input terminal of the operational amplifier OP2, and the second terminal of the variable resistor R1 is connected to the output terminal of the operational amplifier OP2.

[0028] In Embodiment 1 of the present invention, the correlation between the temperature voltage signal output by the temperature sensor and the temperature of the amplifier is:

[0029] ;

[0030] Among them, V1 is the voltage value of the temperature voltage signal, T is the temperature value of the amplifier, K is the Boltzmann constant, q is the electric charge of an electron, N is the area ratio of the triode Q1 to the triode Q2, r1 is the resistance value of the variable resistor R1, r3 is the resistance value of the resistor R3, and Vbe1 is the voltage difference between the base and the collector of the triode Q1. As can be seen from the foregoing, by adjusting the resistance value of the variable resistor R1, the correlation between the temperature voltage signal and the amplifier temperature can be adjusted.

[0031] In the first embodiment of the present invention, the current source may include an MOS transistor M1, an MOS transistor M2, and an operational amplifier OP1. The parameters of the MOS transistor M1 and the MOS transistor M2 are the same. The drain of the MOS transistor M1 and the drain of the MOS transistor M2 are connected to the power supply terminal of the temperature sensor. The power supply terminal of the temperature sensor is connected to the control power supply VDD. The gate of the MOS transistor M1 and the gate of the MOS transistor M2 are connected to the output terminal of the operational amplifier OP1. The source of the MOS transistor M1 and the non-inverting input terminal of the operational amplifier OP1 are connected to the first output terminal of the current source. The source of the MOS transistor M2 and the inverting input terminal of the operational amplifier OP1 are connected to the second output terminal of the current source.

[0032] In the first embodiment of the present invention, the voltage conversion module is connected with a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal to adapt to an amplifier with different gain adjustments.

[0033] In the first embodiment of the present invention, the voltage conversion module includes a resistor R5, a resistor R6, a resistor R7, and an operational amplifier OP3. The first end of the resistor R5 is connected to the power supply terminal of the voltage conversion module. The power supply terminal of the voltage conversion module is connected to the control power supply VDD. The second end of the resistor R5 is connected to the first end of the resistor R6. The second end of the resistor R6 and the first end of the resistor R7 are connected to the inverting input terminal of the operational amplifier OP3. The non-inverting input terminal of the operational amplifier OP3 is connected to the input terminal of the voltage conversion module. The input terminal of the voltage conversion module is connected to the temperature voltage signal. The output terminal of the operational amplifier OP3 and the second end of the resistor R7 are connected to the output terminal of the voltage conversion module. The output terminal of the voltage conversion module is used to output the bias voltage signal; and the voltage ratio adjustment unit includes a variable resistor R2. The first end of the variable resistor R2 is connected to the second end of the resistor R5 and the first end of the resistor R6. The second end of the variable resistor R2 is grounded.

[0034] In the first embodiment of the present invention, the correlation between the bias voltage signal of the voltage conversion module and the temperature voltage signal output by the temperature sensor is:

[0035] ;

[0036] Among them, V2 is the voltage value of the bias voltage signal, vdd is the voltage value of the control power supply VDD, r2 is the resistance value of the variable resistor R2, r5 is the resistance value of the resistor R5, r6 is the resistance value of the resistor R6, and r7 is the resistance value of the resistor R7. As can be seen from the foregoing, by adjusting the resistance value of the variable resistor R2, the correlation between the bias voltage signal and the temperature voltage signal can be adjusted.

[0037] In the first embodiment of the present invention, the amplifier adopts a cascode amplifier. Specifically, the amplifier includes a resistor R8, a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, an inductor L2, a PHEMT transistor M3, and a PHEMT transistor M4. Both the PHEMT transistor M3 and the PHEMT transistor M4 are PHEMT transistors. The first end of the inductor L1 is connected to the first DC bias terminal of the amplifier, and the first DC bias terminal of the amplifier is used to access the bias voltage signal. The second end of the inductor L1 and the first end of the capacitor C2 are connected to the gate of the PHEMT transistor M3. The second end of the capacitor C2 is connected to the input terminal of the amplifier. The source of the PHEMT transistor M3 is connected to the first end of the resistor R8 and the first end of the capacitor C1. The second end of the resistor R8 and the second end of the capacitor C1 are connected to the ground terminal of the amplifier, and the ground terminal of the amplifier is grounded. The drain of the PHEMT transistor M3 is connected to the source of the PHEMT transistor M4. The gate of the PHEMT transistor M4 is connected to the second DC bias terminal of the amplifier, and the second DC bias terminal of the amplifier is used to access the DC bias voltage VG. The drain of the PHEMT transistor M4 is connected to the first end of the inductor L2 and the first end of the capacitor C3. The second end of the inductor L2 is connected to the power supply terminal of the amplifier, and the power supply terminal of the amplifier accesses the control power supply VDD. The second end of the capacitor C3 is connected to the output terminal of the amplifier. Among them, the MOS transistor M3 operates in the saturation region, and the MOS transistor M4 also operates in the saturation region. By adjusting the gate voltage of the MOS transistor M3, the transconductance of the MOS transistor M3 can be directly changed, thereby directly changing the amplifier gain.

[0038] Embodiment 2:

[0039] Cooperate with Figure 3 As shown, in the second embodiment of the present invention, the temperature sensor is also connected with a temperature proportional adjustment unit, and the temperature proportional adjustment unit is used to adjust the correlation between the temperature voltage signal and the amplifier temperature to adapt to an amplifier with different gain adjustments. The specific structures of the temperature sensor and the temperature proportional adjustment unit in Embodiment 2 are the same as those in Embodiment 1, and will not be elaborated here.

[0040] In the second embodiment of the present invention, the voltage conversion module is connected to a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal so as to adapt to amplifiers with different gain adjustments. Specifically, the voltage conversion module includes an MOS transistor M5. The drain of the MOS transistor M5 is connected to the power supply terminal of the voltage conversion module, and the power supply terminal of the voltage conversion module is connected to the control power supply VDD. The gate of the MOS transistor M5 is connected to the input terminal of the voltage conversion module, and the input terminal of the voltage conversion module is connected to the temperature voltage signal. The source of the MOS transistor M5 is connected to the output terminal of the voltage conversion module, and the output terminal of the voltage conversion module is used to output the bias voltage signal. And the voltage ratio adjustment unit includes a variable resistor R10. The first end of the variable resistor R10 is connected to the source of the MOS transistor M5, and the second end of the variable resistor R10 is grounded. By adjusting the resistance value of R10, the correlation between the bias voltage signal and the temperature voltage signal can be adjusted.

[0041] In the second embodiment of the present invention, the amplifier adopts a common-source amplifier. Specifically, the amplifier includes a resistor R11, a capacitor C4, a capacitor C5, a capacitor C6, an inductor L3, an inductor L4, and a PHEMT transistor M6. The PHEMT transistor M6 is a PHEMT transistor. The first end of the inductor L3 is connected to the DC bias terminal of the amplifier, and the DC bias terminal of the amplifier is used to connect the bias voltage signal. The second end of the inductor L3 and the first end of the capacitor C5 are connected to the gate of the PHEMT transistor M6. The second end of the capacitor C5 is connected to the input terminal of the amplifier. The source of the PHEMT transistor M6 is connected to the first end of the resistor R11 and the first end of the capacitor C4. The second end of the resistor R11 and the second end of the capacitor C4 are connected to the ground terminal of the amplifier, and the ground terminal of the amplifier is grounded. The drain of the PHEMT transistor M6 is connected to the first end of the inductor L4 and the first end of the capacitor C6. The second end of the inductor L4 is connected to the power supply terminal of the amplifier, and the power supply terminal of the amplifier is connected to the control power supply VDD. The second end of the capacitor C6 is connected to the output terminal of the amplifier. Among them, the PHEMT transistor M6 operates in the saturation region. By adjusting the gate voltage of the PHEMT transistor M6, the transconductance of the PHEMT transistor M6 can be directly changed, thereby directly changing the amplifier gain.

[0042] The above embodiments and diagrams do not limit the product form and style of the present invention. Any appropriate changes or modifications made by those of ordinary skill in the art shall be regarded as not departing from the patent scope of the present invention.

Claims

1. A low temperature sensitivity gain adjustable amplifier circuit, characterized in that: It includes a temperature sensor, a voltage conversion module, and an amplifier with adjustable gain; The temperature sensor is used to monitor the temperature of the amplifier and output a corresponding temperature voltage signal according to the temperature of the amplifier; The voltage conversion module is connected to the temperature sensor and the amplifier. The voltage conversion module is used to output a corresponding bias voltage signal to the amplifier according to the temperature voltage signal; The temperature sensor is manufactured using CMOS process, and the amplifier is manufactured using GaAs process; The temperature sensor is connected with a temperature ratio adjustment unit, and the temperature ratio adjustment unit is used to adjust the correlation between the temperature voltage signal and the temperature of the amplifier; The temperature sensor includes a resistor R3, a resistor R4, a triode Q1, a triode Q2, an operational amplifier OP2, and a current source; The areas of the triode Q1 and the triode Q2 are different, and the first output terminal and the second output terminal of the current source can output currents with the same magnitude. The first output terminal of the current source is connected to the gate and collector of the triode Q1 through the resistor R4, the second terminal of the current source is connected to the gate and collector of the triode Q2, the gate and collector of the triode Q1 are also connected to the inverting input terminal of the operational amplifier OP2 through the resistor R3, the gate and collector of the triode Q2 are also connected to the non-inverting input terminal of the operational amplifier OP2, the emitter of the triode Q1 and the emitter of the triode Q2 are connected to the ground terminal of the temperature sensor, the ground terminal of the temperature sensor is grounded, the output terminal of the operational amplifier OP2 is connected to the output terminal of the temperature sensor, and the output terminal of the temperature sensor is used to output a temperature voltage signal; The temperature ratio adjustment unit includes a variable resistor R1. The first terminal of the variable resistor R1 is connected to the inverting input terminal of the operational amplifier OP2, and the second terminal of the variable resistor R1 is connected to the output terminal of the operational amplifier OP2.

2. The low-temperature-sensitivity gain-adjustable amplifier circuit according to claim 1, characterized in that: The current source includes a MOS transistor M1, a MOS transistor M2, and an operational amplifier OP1. The parameters of the MOS transistor M1 and the MOS transistor M2 are the same. The drain of the MOS transistor M1 and the drain of the MOS transistor M2 are connected to the power supply terminal of the temperature sensor, and the power supply terminal of the temperature sensor is connected to the control power supply VDD. The gate of the MOS transistor M1 and the gate of the MOS transistor M2 are connected to the output terminal of the operational amplifier OP1. The source of the MOS transistor M1 and the non-inverting input terminal of the operational amplifier OP1 are connected to the first output terminal of the current source. The source of the MOS transistor M2 and the inverting input terminal of the operational amplifier OP1 are connected to the second output terminal of the current source.

3. The low-temperature-sensitivity gain-adjustable amplifier circuit according to claim 1, wherein: The voltage conversion module is connected with a voltage ratio adjustment unit, and the voltage ratio adjustment unit is used to adjust the correlation between the bias voltage signal and the temperature voltage signal.

4. The low-temperature-sensitivity gain-adjustable amplifier circuit according to claim 3, characterized in that: The voltage conversion module includes a resistor R5, a resistor R6, a resistor R7, and an operational amplifier OP3. The first terminal of the resistor R5 is connected to the power supply terminal of the voltage conversion module, and the power supply terminal of the voltage conversion module is connected to the control power supply VDD. The second terminal of the resistor R5 is connected to the first terminal of the resistor R6. The second terminal of the resistor R6 and the first terminal of the resistor R7 are connected to the inverting input terminal of the operational amplifier OP3. The non-inverting input terminal of the operational amplifier OP3 is connected to the input terminal of the voltage conversion module, and the input terminal of the voltage conversion module is connected to the temperature voltage signal. The output terminal of the operational amplifier OP3 and the second terminal of the resistor R7 are connected to the output terminal of the voltage conversion module, and the output terminal of the voltage conversion module is used to output a bias voltage signal; The voltage ratio adjustment unit includes a variable resistor R2. The first end of the variable resistor R2 is connected to the second end of the resistor R5 and the first end of the resistor R6, and the second end of the variable resistor R2 is grounded.

5. The low-temperature-sensitivity gain-adjustable amplifier circuit according to claim 1 or 4, characterized in that: The amplifier includes a resistor R8, a capacitor C1, a capacitor C2, a capacitor C3, an inductor L1, an inductor L2, a PHEMT transistor M3, and a PHEMT transistor M4. The first end of the inductor L1 is connected to the first DC bias terminal of the amplifier, and the first DC bias terminal of the amplifier is used to access a bias voltage signal. The second end of the inductor L1 and the first end of the capacitor C2 are connected to the gate of the PHEMT transistor M3. The second end of the capacitor C2 is connected to the input terminal of the amplifier. The source of the PHEMT transistor M3 is connected to the first end of the resistor R8 and the first end of the capacitor C1. The second end of the resistor R8 and the second end of the capacitor C1 are connected to the ground terminal of the amplifier, and the ground terminal of the amplifier is grounded. The drain of the PHEMT transistor M3 is connected to the source of the PHEMT transistor M4. The gate of the PHEMT transistor M4 is connected to the second DC bias terminal of the amplifier, and the second DC bias terminal of the amplifier is used to access a DC bias voltage VG. The drain of the PHEMT transistor M4 is connected to the first end of the inductor L2 and the first end of the capacitor C3. The second end of the inductor L2 is connected to the power supply terminal of the amplifier, and the power supply terminal of the amplifier accesses a control power supply VDD. The second end of the capacitor C3 is connected to the output terminal of the amplifier.

6. The low-temperature-sensitivity gain-adjustable amplifier circuit according to claim 3, characterized in that: The voltage conversion module includes a MOS transistor M5. The drain of the MOS transistor M5 is connected to the power supply terminal of the voltage conversion module, and the power supply terminal of the voltage conversion module accesses a control power supply VDD. The gate of the MOS transistor M5 is connected to the input terminal of the voltage conversion module, and the input terminal of the voltage conversion module accesses a temperature voltage signal. The source of the MOS transistor M5 is connected to the output terminal of the voltage conversion module, and the output terminal of the voltage conversion module is used to output a bias voltage signal. The voltage ratio adjustment unit includes a variable resistor R10. The first end of the variable resistor R10 is connected to the source of the MOS transistor M5, and the second end of the variable resistor R10 is grounded.

7. The low-temperature-sensitivity gain-adjustable amplifier circuit according to claim 1 or 6, characterized in that: The amplifier includes a resistor R11, a capacitor C4, a capacitor C5, a capacitor C6, an inductor L3, an inductor L4, and a PHEMT transistor M6. The first end of the inductor L3 is connected to the DC bias terminal of the amplifier, and the DC bias terminal of the amplifier is used to access a bias voltage signal. The second end of the inductor L3 and the first end of the capacitor C5 are connected to the gate of the PHEMT transistor M6. The second end of the capacitor C5 is connected to the input terminal of the amplifier. The source of the PHEMT transistor M6 is connected to the first end of the resistor R11 and the first end of the capacitor C4. The second end of the resistor R11 and the second end of the capacitor C4 are connected to the ground terminal of the amplifier, and the ground terminal of the amplifier is grounded. The drain of the PHEMT transistor M6 is connected to the first end of the inductor L4 and the first end of the capacitor C6. The second end of the inductor L4 is connected to the power supply terminal of the amplifier, and the power supply terminal of the amplifier accesses a control power supply VDD. The second end of the capacitor C6 is connected to the output terminal of the amplifier.

8. The low-temperature-sensitivity gain-adjustable amplifier circuit according to claim 1 or 3, characterized in that: The voltage conversion module is manufactured using a CMOS process.

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