Method for efficiently preparing Van der Waals integrated memristor

Abstract

The invention belongs to the technical field of electronic devices, and relates to a method for efficiently preparing a Van der Waals integrated memristor, which comprises the following steps of: (1) loading a bottom electrode and a two-dimensional material layer on the surface of a silicon wafer in sequence to obtain the silicon wafer loaded with the bottom electrode and the two-dimensional material layer in sequence; (2) spin-coating photoresist on the surface of the silicon wafer loaded with the bottom electrode and the two-dimensional material layer in sequence, and heating and curing to obtain a photoresist layer; (3) performing laser direct writing, developing and fixing on the photoresist layer to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse patterning photoresist layer; (4) spin-coating a polyvinyl alcohol solution on the surface of the anti-patterned photoresist layer, and heating and curing to obtain a patterned electrode layer; (5) removing the photoresist part in the patterned electrode layer to obtain a polyvinyl alcohol patterned electrode layer; and (6) loading a top electrode on the surface of the polyvinyl alcohol patterned electrode layer to obtain the Van der Waals integrated memristor. According to the method, the preparation efficiency and the yield of the Van der Waals integrated memristor device can be effectively improved.

Description

Technical Field

[0001] The invention belongs to the technical field of electronic devices and relates to a method for efficiently preparing a van der Waals integrated memristor device. Background Art

[0002] Van der Waals integrated memristor devices are mainly used in three directions: storage, neuromorphic computing, and logical operations. Storage includes non-volatile memory, such as computers and other devices. After shutting down, data will not be lost, and the computer can be quickly turned on to restore the state; it can also be used to build caches to speed up computer data reading and processing. It can also achieve large-capacity storage, making storage devices smaller but able to store more data. Neuromorphic computing includes: simulating brain neurons and synapses, building brain-like computers, and helping to improve performance and efficiency in artificial intelligence fields such as sentiment analysis, image recognition, reinforcement learning, and natural language processing. Logical operations include: Boolean logic operations, replacing existing digital logic circuits; and also include storage and computing integrated architecture, which directly calculates while storing data, improves processing efficiency, reduces power consumption and complexity, and is suitable for mobile devices and edge computing.

[0003] At present, the existing van der Waals integrated memristor device structure generally includes: a substrate, a bottom electrode layer, a functional layer, and a top electrode layer; the van der Waals integrated memristor device with the above structure has the problem that the electrode is easy to fall off and the performance stability is poor. Summary of the invention

[0004] The purpose of the present invention is to address the above-mentioned problems existing in the prior art and to propose a method for efficiently preparing a van der Waals integrated memristor device, which uses polyvinyl alcohol as an adhesive to avoid electrode shedding and improve the preparation efficiency and yield of the van der Waals integrated memristor device.

[0005] One object of the present invention is achieved by the following technical solutions:

[0006] A method for efficiently preparing a van der Waals integrated memristor device, comprising:

[0007] (1) sequentially loading a bottom electrode and a two-dimensional material layer on the surface of a silicon wafer, thereby obtaining a silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material layer;

[0008] (2) spin coating a photoresist on the surface of a silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material layer, and heating and curing the photoresist layer;

[0009] (3) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0010] (4) spin coating a polyvinyl alcohol solution on the surface of the reverse-patterned photoresist layer, and heating and curing the solution to obtain a patterned electrode layer;

[0011] (5) removing the photoresist portion in the patterned electrode layer to obtain a polyvinyl alcohol patterned electrode layer;

[0012] (6) A top electrode is loaded on the surface of the polyvinyl alcohol patterned electrode layer to obtain a van der Waals integrated memristor device.

[0013] Preferably, the method for preparing the silicon wafer sequentially loaded with the bottom electrode and the two-dimensional material in (1) comprises:

[0014] (11) spin coating a photoresist on the surface of the pretreated silicon wafer, and heating and curing the photoresist layer;

[0015] (12) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0016] (13) plating an electrode layer on the surface of the reverse-patterned photoresist layer, removing the reverse-patterned photoresist layer, and obtaining a silicon wafer loaded with a bottom electrode;

[0017] (14) Using tape to peel off the two-dimensional material, the two-dimensional material is directionally transferred to the bottom electrode surface of the silicon wafer loaded with the bottom electrode, thereby obtaining a silicon wafer loaded with the bottom electrode and the two-dimensional material in sequence.

[0018] Preferably, the two-dimensional material in (1) includes one or more of graphene, molybdenum disulfide (MoS2), tungsten diselenide (WSe2), copper indium phosphide (CIPS), copper indium phosphide (CIPS), and copper chromium phosphide (CCPS).

[0019] Preferably, the bottom electrode in (1) is a metal electrode, including one or more of a gold electrode, a platinum electrode, a copper electrode, an aluminum electrode, a silver electrode, and a copper electrode.

[0020] Preferably, the heating curing temperature in (2) and (4) is 100 to 150° C. and the curing time is 1 to 30 minutes.

[0021] Preferably, the patterned electrode layer in (3) comprises an embedded reverse-patterned photoresist layer and a polyvinyl alcohol patterned electrode layer.

[0022] Preferably, the concentration of the polyvinyl alcohol solution in (3) is 0.1 to 10 wt %.

[0023] More preferably, the concentration of the polyvinyl alcohol solution in (3) is 1 to 3 wt %.

[0024] Preferably, the polyvinyl alcohol solution in (3) is prepared by stirring polyvinyl alcohol powder and water at 60-90° C. for 0.1-6 h.

[0025] Preferably, the top electrode in (6) is a metal electrode, including one or more of a gold electrode, a platinum electrode, a copper electrode, an aluminum electrode, a silver electrode, and a copper electrode.

[0026] Preferably, in (6), the top electrode is directionally transferred to the surface of the polyvinyl alcohol patterned electrode layer through PDMS.

[0027] Preferably, the method for preparing the top electrode in (6) comprises:

[0028] (61) spin coating a photoresist on the surface of the pretreated silicon wafer, and heating and curing the photoresist layer;

[0029] (62) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0030] (63) A metal electrode layer is plated on the surface of the reverse-patterned photoresist layer, and the reverse-patterned photoresist layer is removed to obtain a top electrode.

[0031] Preferably, the heating curing temperature in (61) is 100-150°C and the time is 1-30 min.

[0032] The second object of the present invention is achieved by the following technical solutions:

[0033] A van der Waals integrated memristor device comprises a bottom electrode, a two-dimensional material layer, a polyvinyl alcohol patterned electrode layer, and a top electrode in sequence.

[0034] Preferably, the thickness of the bottom electrode is 6 to 20 nm, and the thickness of the top electrode is 6 to 20 nm.

[0035] Preferably, the bottom electrode is a metal electrode, including one or more of a gold electrode, a platinum electrode, a copper electrode, an aluminum electrode, a silver electrode, and a copper electrode.

[0036] Preferably, the method for preparing the bottom electrode comprises:

[0037] (11) spin coating a photoresist on the surface of the pretreated silicon wafer, and heating and curing the photoresist layer;

[0038] (12) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0039] (13) Plating an electrode layer on the surface of the reverse-patterned photoresist layer, removing the reverse-patterned photoresist layer, and obtaining a silicon wafer loaded with a bottom electrode.

[0040] Preferably, the thickness of the two-dimensional material layer is 10 to 200 nm.

[0041] Preferably, the two-dimensional material includes one or more of graphene, molybdenum disulfide (MoS2), tungsten diselenide (WSe2), copper indium phosphosulfide (CIPS), and copper chromium phosphosulfide (CCPS).

[0042] Preferably, the thickness of the polyvinyl alcohol patterned electrode layer is 40-300 nm.

[0043] More preferably, the thickness of the polyvinyl alcohol patterned electrode layer is 80 to 120 nm.

[0044] Preferably, the method for preparing the polyvinyl alcohol patterned electrode layer comprises:

[0045] (1) Spin-coating a photoresist on the surface of the base layer and heating and curing the photoresist layer;

[0046] (2) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0047] (3) spin coating a polyvinyl alcohol solution on the surface of the reverse-patterned photoresist layer, and heating and curing the solution to obtain a patterned electrode layer;

[0048] (4) removing the photoresist portion in the patterned electrode layer to obtain a polyvinyl alcohol patterned electrode layer.

[0049] More preferably, the base layer is a silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material layer.

[0050] Preferably, the method for preparing the top electrode comprises:

[0051] (1) spin coating a photoresist on the surface of a pretreated silicon wafer, and heating and curing the photoresist layer;

[0052] (2) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0053] (3) Plating a metal electrode layer on the surface of the reverse-patterned photoresist layer, removing the reverse-patterned photoresist layer, and obtaining a silicon wafer loaded with a top electrode.

[0054] Compared with the prior art, the present invention has the following beneficial effects:

[0055] 1. The method for efficiently preparing a van der Waals integrated memristor device of the present invention effectively prevents the electrode from falling off by adding a polyvinyl alcohol patterned electrode layer between the functional layer and the top electrode as an adhesive.

[0056] 2. The method for efficiently preparing van der Waals integrated memristor devices of the present invention can effectively improve the preparation efficiency and yield of van der Waals integrated memristor devices.

[0057] 3. The van der Waals integrated memristor device of the present invention has good application potential in the fields of energy saving, high-density storage, wearable flexible electronic devices, bioelectronics and medical treatment, artificial intelligence and machine learning, optoelectronics and photonics. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Figure 1 The figure is a schematic flow chart of the method for efficiently preparing a van der Waals integrated memristor device according to the present invention.

[0059] Figure 2 Optical microscope images of the bottom electrode (a), the silicon wafer loaded with the bottom electrode and the two-dimensional material layer after the two-dimensional material is transferred (b), and the van der Waals integrated memristor device (c) in Example 1 of the present invention.

[0060] Figure 3 This is an optical microscope image of the van der Waals integrated memristor device after immersion in Example 1 of the present invention.

[0061] Figure 4 The forming process diagram (a), IV cycle diagram (b), and IV characteristic diagram under different current limits (c) of the van der Waals integrated memristor device in Example 1 of the present invention are shown.

[0062] Figure 5 This is an optical microscope image of the van der Waals integrated memristor device after immersion in Example 2 of the present invention.

[0063] Figure 6 This is an optical microscope image of the van der Waals integrated memristor device after immersion in Comparative Example 1 of the present invention. DETAILED DESCRIPTION

[0064] The technical solution of the present invention is further described below through specific embodiments and drawings. It should be understood that the specific embodiments described herein are only used to help understand the present invention and are not specifically limited to the present invention. The drawings used herein are only for better illustrating the disclosed content of the present invention and do not have a limiting effect on the scope of protection.

[0065] Unless otherwise specified, the raw materials used in the embodiments of the present invention are all commonly used raw materials in the art, and the methods used in the embodiments are all conventional methods in the art.

[0066] In this article, the schematic diagram of the process of efficiently preparing van der Waals integrated memristor devices is as follows Figure 1 As shown, specifically including:

[0067] (1) sequentially loading a bottom electrode and a two-dimensional material layer on the surface of a silicon wafer, thereby obtaining a silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material layer;

[0068] (11) spin coating a photoresist on the surface of the pretreated silicon wafer, and heating and curing the photoresist layer;

[0069] (12) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0070] (13) plating an electrode layer on the surface of the reverse-patterned photoresist layer, removing the reverse-patterned photoresist layer, and obtaining a silicon wafer loaded with a bottom electrode;

[0071] (14) The two-dimensional material is peeled off using tape, and PDMS is used to directionally transfer the two-dimensional material to the bottom electrode surface of the silicon wafer loaded with the bottom electrode, thereby obtaining a silicon wafer loaded with the bottom electrode and the two-dimensional material layer in sequence.

[0072] (2) spin coating a photoresist on the surface of a silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material layer, and heating and curing the photoresist layer;

[0073] (3) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0074] (4) spin coating a polyvinyl alcohol solution on the surface of the reverse-patterned photoresist layer, and heating and curing the solution to obtain a patterned electrode layer;

[0075] (5) removing the photoresist portion in the patterned electrode layer to obtain a polyvinyl alcohol patterned electrode layer;

[0076] (6) loading a top electrode on the surface of the polyvinyl alcohol patterned electrode layer to obtain a van der Waals integrated memristor device;

[0077] The preparation method of the top electrode comprises:

[0078] (61) spin coating a photoresist on the surface of the pretreated silicon wafer, and heating and curing the photoresist layer;

[0079] (62) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer;

[0080] (63) plating a metal electrode layer on the surface of the reverse-patterned photoresist layer, removing the reverse-patterned photoresist layer, and obtaining a silicon wafer loaded with a top electrode;

[0081] (64) PDMS directionally transfers the top electrode to the surface of the polyvinyl alcohol patterned electrode layer.

[0082] Example 1

[0083] In this embodiment, the van der Waals integrated memristor device includes, in sequence, an Au bottom electrode (10 nm), a two-dimensional material copper indium phosphorus sulfide layer (67 nm), a polyvinyl alcohol patterned electrode layer (100 nm), and an Au top electrode (10 nm).

[0084] A method for efficiently preparing a van der Waals integrated memristor device, comprising:

[0085] (1) The silicon wafer is ultrasonically immersed in acetone and isopropanol in sequence to obtain a pretreated silicon wafer; then, AZ5214 photoresist is spin-coated on the surface of the pretreated silicon wafer using a Xirui coating machine, and the process is run for 30 seconds under yellow light at a rotation speed of 3000 rpm and an acceleration of 1500 rpm / s; then, the photoresist layer is heated and cured at 120° C. for 3 minutes to obtain a photoresist layer; a preset electrode pattern is obtained on the photoresist layer by laser direct writing, UV development for 10 seconds, and fixing in a fixing solution for 1 second; the undeveloped photoresist is removed to obtain a reverse-patterned photoresist layer; and an electron beam evaporation instrument is used on the surface of the reverse-patterned photoresist layer at 6×10 -3 The Au electrode layer was plated at a vacuum degree of 1500w, a power of 1500w, and an evaporation rate of 25 angstroms. The anti-patterned photoresist layer was removed by soaking in acetone for 15 minutes and washing with isopropanol to obtain a silicon wafer loaded with a bottom electrode. The two-dimensional material copper indium phosphorus sulfur CIPS was mechanically peeled off using tape, and the two-dimensional material was directionally transferred to the surface of the bottom electrode using a high-precision transfer platform through PDMS to obtain a silicon wafer loaded with a bottom electrode and a two-dimensional material layer in sequence.

[0086] (2) Spin coating Z5214 photoresist on the surface of the silicon wafer loaded with the bottom electrode and the two-dimensional material layer in sequence, and running under yellow light at a rotation speed of 3000 rpm and an acceleration of 1500 rpm / s for 30 seconds; then heating and curing at 120° C. for 3 minutes to obtain a photoresist layer;

[0087] (3) obtaining a preset electrode pattern on the photoresist layer by laser direct writing, UV development for 10 seconds, and fixing in a fixing solution for 2 seconds; removing the undeveloped photoresist by acetone immersion to obtain a reverse-patterned photoresist layer;

[0088] (4) spin coating a polyvinyl alcohol solution with a concentration of 1 wt % on the surface of the reverse patterned photoresist layer, and heating and curing at 120° C. for 3 min to obtain a patterned electrode layer;

[0089] (5) removing the photoresist portion of the patterned electrode layer by soaking in acetone for 15 min, washing with ethanol, and washing with water to obtain a polyvinyl alcohol patterned electrode layer;

[0090] (6) The silicon wafer is ultrasonically immersed in acetone and isopropanol in sequence to obtain a pretreated silicon wafer; then, AZ5214 photoresist is spin-coated on the surface of the pretreated silicon wafer using a Xirui coating machine, and the process is run for 30 seconds at a rotation speed of 3000 rpm and an acceleration of 1500 rpm / s under yellow light; then, the photoresist layer is heated and cured at 120° C. for 3 minutes to obtain a photoresist layer; a preset electrode pattern is obtained on the photoresist layer by laser direct writing, UV development for 10 seconds, and fixing in a fixing solution for 1 second; the undeveloped photoresist is removed to obtain a reverse-patterned photoresist layer; and an electron beam evaporation instrument is used on the surface of the reverse-patterned photoresist layer at 6×10 -3The Au electrode layer (10 nm) was plated at a vacuum degree of 1500 W, a power of 1500 W, and an evaporation rate of 25 angstroms. The reverse patterned photoresist layer was removed by soaking in acetone for 15 min and washing with isopropanol to obtain a silicon wafer loaded with a top electrode.

[0091] The top electrode was directionally transferred to the surface of the polyvinyl alcohol patterned electrode layer using a high-precision transfer platform through PDMS, and heated at 120°C for 2 minutes to obtain a van der Waals integrated memristor device.

[0092] Figure 2 Optical microscope images of the bottom electrode (a), the silicon wafer loaded with the bottom electrode and the two-dimensional material layer after the two-dimensional material is transferred (b), and the van der Waals integrated memristor device (c) in this embodiment.

[0093] The obtained van der Waals integrated memristor device was immersed in acetone for 1 min, then immersed in 95% ethanol and water for 5 s, taken out, and observed under an optical microscope. Figure 3 This is an optical microscope image of the van der Waals integrated memristor device after immersion in this embodiment. The electrodes are not detached, which proves that the integrity of the van der Waals integrated memristor device in this embodiment is good.

[0094] The performance of the van der Waals integrated memristor device was tested. Figure 4 It can be seen that (a) a larger voltage is applied to form a conductive channel during the forming process; (b) the performance of the van der Waals integrated memristor device is relatively stable with a window ratio of 10 after 100 cycles of stable cycling under a current limit of 1uA. -4 ; (c) The performance diagram of the van der Waals integrated memristor device under different current limiting conditions was tested, proving that the van der Waals integrated memristor device can change between high and low resistance states, with stable performance and low power consumption.

[0095] Example 2

[0096] In this embodiment, the van der Waals integrated memristor device includes a Pt bottom electrode (10 nm), a two-dimensional material graphene layer (90 nm), a polyvinyl alcohol patterned electrode layer (100 nm), and a Pt top electrode (10 nm) in sequence.

[0097] A van der Waals integrated memristor device was manufactured according to the method in Example 1.

[0098] The obtained van der Waals integrated memristor device was immersed in acetone for 1 min, then immersed in 95% ethanol and water for 5 s, taken out, and observed under an optical microscope. Figure 5 This is an optical microscope image of the van der Waals integrated memristor device after immersion in this embodiment. The electrodes are not detached, which proves that the integrity of the van der Waals integrated memristor device in this embodiment is good.

[0099] Example 3

[0100] Compared with Example 1, the difference is that the concentration of the polyvinyl alcohol solution is 2 wt %.

[0101] The obtained van der Waals integrated memristor device was immersed in acetone for 1 min, and then immersed in 95% ethanol and water for 5 s respectively. After being taken out and observed under an optical microscope, it was found that the electrode was basically not detached.

[0102] Example 4

[0103] Compared with Example 1, the difference is that the concentration of the polyvinyl alcohol solution is 0.5 wt %.

[0104] The obtained van der Waals integrated memristor device was immersed in acetone for 1 min, and then immersed in 95% ethanol and water for 5 s respectively. After being taken out and observed under an optical microscope, it was found that the electrode was basically not detached.

[0105] Example 5

[0106] Compared with Example 1, the difference is that the thickness of the polyvinyl alcohol patterned electrode layer is 180 nm.

[0107] The obtained van der Waals integrated memristor device was immersed in acetone for 1 min, and then immersed in 95% ethanol and water for 5 s respectively. After being taken out and observed under an optical microscope, it was found that the electrode was basically not detached.

[0108] Example 6

[0109] Compared with Example 1, the difference is that the thickness of the polyvinyl alcohol patterned electrode layer is 50 nm.

[0110] The obtained van der Waals integrated memristor device was immersed in acetone for 1 min, and then immersed in 95% ethanol and water for 5 s respectively. After being taken out and observed under an optical microscope, the electrode was partially detached.

[0111] Comparative Example 1

[0112] Compared with Example 1, the difference is that there is no polyvinyl alcohol patterned electrode layer.

[0113] The obtained van der Waals integrated memristor device was immersed in acetone for 5 seconds, then immersed in 95% ethanol and water for 5 seconds, taken out, and observed under an optical microscope. Figure 6 This is an optical microscope image of the van der Waals integrated memristor device after immersion in this comparative example, and most of the electrodes have fallen off.

[0114] In summary, the method for efficiently preparing van der Waals integrated memristor devices of the present invention effectively prevents the electrode from falling off by adding a polyvinyl alcohol patterned electrode layer between the functional layer and the top electrode as an adhesive; and the method for efficiently preparing van der Waals integrated memristor devices of the present invention can effectively improve the preparation efficiency and yield of van der Waals integrated memristor devices.

[0115] The various aspects, embodiments, and features of the present invention should be considered to be illustrative in all aspects and not limiting of the present invention, the scope of which is defined solely by the claims. Other embodiments, modifications, and uses will be apparent to those skilled in the art without departing from the spirit and scope of the claimed invention.

[0116] In the preparation method of the present invention, the order of each step is not limited to the order listed. For those skilled in the art, without creative work, the order of each step is also within the protection scope of the present invention. In addition, two or more steps or actions can be performed simultaneously.

[0117] Finally, it should be noted that the specific embodiments described herein are merely examples of the present invention, and are not intended to limit the implementation methods of the present invention. A person skilled in the art of the present invention may make various modifications or supplements to the specific embodiments described, or replace them in a similar manner. It is not necessary and impossible to provide all examples of all implementation methods here. However, these obvious changes or modifications derived from the essential spirit of the present invention still fall within the scope of protection of the present invention, and interpreting them as any additional limitation is contrary to the spirit of the present invention.

Claims

1. A method for efficiently preparing a van der Waals integrated memristor device, characterized in that: The method comprises: (1) sequentially loading a bottom electrode and a two-dimensional material layer on the surface of a silicon wafer, thereby obtaining a silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material layer; (2) spin coating a photoresist on the surface of a silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material layer, and heating and curing the photoresist layer; (3) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern, and removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer; (4) spin coating a polyvinyl alcohol solution on the surface of the reverse-patterned photoresist layer, and heating and curing the solution to obtain a patterned electrode layer; (5) removing the photoresist portion in the patterned electrode layer to obtain a polyvinyl alcohol patterned electrode layer; (6) A top electrode is loaded on the surface of the polyvinyl alcohol patterned electrode layer to obtain a van der Waals integrated memristor device.

2. The method for efficiently preparing a van der Waals integrated memristor device according to claim 1, characterized in that: The method for preparing the silicon wafer sequentially loaded with a bottom electrode and a two-dimensional material in (1) comprises: (11) spin coating a photoresist on the surface of the pretreated silicon wafer, and heating and curing the photoresist layer; (12) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer; (13) plating an electrode layer on the surface of the reverse-patterned photoresist layer, removing the reverse-patterned photoresist layer, and obtaining a silicon wafer loaded with a bottom electrode; (14) Using tape to peel off the two-dimensional material, the two-dimensional material is directionally transferred to the bottom electrode surface of the silicon wafer loaded with the bottom electrode, thereby obtaining a silicon wafer loaded with the bottom electrode and the two-dimensional material in sequence.

3. The method for efficiently preparing a van der Waals integrated memristor device according to claim 1, characterized in that: (1) The two-dimensional material includes one or more of graphene, molybdenum disulfide, tungsten diselenide, copper indium phosphide, strontium titanate, copper indium phosphide, and copper chromium phosphide.

4. The method for efficiently preparing a van der Waals integrated memristor device according to claim 1, characterized in that: The patterned electrode layer in (3) comprises an embedded reverse patterned photoresist layer and a polyvinyl alcohol patterned electrode layer.

5. The method for efficiently preparing a van der Waals integrated memristor device according to claim 1, characterized in that: The concentration of the polyvinyl alcohol solution in (3) is 0.1-10 wt %.

6. The method for efficiently preparing a van der Waals integrated memristor device according to claim 1, characterized in that: The heating curing temperature in (2) and (4) is 100-150° C. and the curing time is 1-30 minutes.

7. The method for efficiently preparing a van der Waals integrated memristor device according to claim 1, characterized in that: The top electrode in (6) is transferred to the surface of the polyvinyl alcohol patterned electrode layer through PDMS; the top electrode in (6) is a metal electrode, including one or more of a gold electrode, a platinum electrode, a copper electrode, an aluminum electrode, a silver electrode, and a copper electrode.

8. The method for efficiently preparing a van der Waals integrated memristor device according to claim 1, characterized in that: The method for preparing the top electrode in (6) comprises: (61) spin coating a photoresist on the surface of the pretreated silicon wafer, and heating and curing the photoresist layer; (62) directly writing, developing, and fixing the photoresist layer with a laser to obtain a preset electrode pattern; removing the undeveloped photoresist to obtain a reverse-patterned photoresist layer; (63) A metal electrode layer is plated on the surface of the reverse-patterned photoresist layer, and the reverse-patterned photoresist layer is removed to obtain a top electrode.

9. A van der Waals integrated memristor device, characterized in that: The device is prepared by the method for efficiently preparing a van der Waals integrated memristor device according to any one of claims 1 to 8.

10. The van der Waals integrated memristor device according to claim 9, characterized in that: The van der Waals integrated memristor device includes a bottom electrode, a two-dimensional material layer, a polyvinyl alcohol patterned electrode layer, and a top electrode in sequence.

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