Preparation method of reconfigurable memristor based on nanopore structure

Abstract

The invention belongs to the field of semiconductor technology, biological film technology and neuromorphic calculation, and discloses a preparation method of a reconfigurable memristor based on a nanopore structure, which comprises the following steps: step 1, preparing a polymer solution; step 2, substrate pretreatment; 3, carrying out spin coating on the substrate by using a polymer solution; 4, preparing a nanopore polymer film layer with a nanopore structure; 5, carrying out vacuum evaporation to obtain a small-molecule resistive layer thin film; 6, evaporating a top electrode; and 7, cooling the top electrode to room temperature, and taking out the top electrode to obtain a single reconfigurable memristor device based on the nanopore structure. According to the memristor, the nanopore structure of the polymer thin film layer is used for providing a rapid channel for ion migration, and the conversion of the memristor between a resistive random access memory and a dynamic memristor is realized by changing the thickness of the thin film of the small molecule resistive random access layer; the memristor can have the advantage of efficient information storage of a resistive random access memory and the advantage of a dynamic memristor for simulating a dendritic nonlinear integration function at the same time.

Description

Technical Field

[0001] The present invention belongs to the fields of semiconductor technology, biofilm technology and neuromorphic computing, and specifically relates to a method for preparing a reconfigurable memristor based on a nanopore structure. Background Art

[0002] With the rapid development of information technology, the demand for memory is increasing. However, traditional memory technologies, such as flash memory and dynamic random access memory, face certain bottlenecks in terms of density, power consumption and performance. Therefore, researchers began to explore new memory technologies to meet this challenge. Memristor, as a new type of memory, has the advantages of low power consumption, high density, fast read and write speed and excellent durability. By applying voltage across the two ends of the memristor, the resistive material can be caused to form or break conductive filaments between the upper and lower electrodes, so that the device can switch between high resistance and low resistance states. Due to its simple structure, mature process, and compatibility with CMOS process, memristor has become one of the strong competitors for new storage technologies in the post-Moore era.

[0003] In biological neural networks, neurons are composed of dendrites, cell bodies, and axons. Dendrites are responsible for receiving input signals from other neurons and integrating them to the cell body. The active and passive characteristics of dendrites play a key role in information processing. They can not only integrate input signals nonlinearly, but also integrate spatiotemporal information and filter out irrelevant background noise. Dendrites with active characteristics can generate local dendritic spikes and perform superlinear integration of input signals, while dendrites with passive characteristics perform sublinear integration. These two dendritic characteristics effectively improve the computing power of neurons, enabling biological neural networks to handle complex tasks more flexibly and efficiently. However, the commonly used classical neuron models usually ignore the function of dendrites and rely on capacitors to integrate input information. This method cannot filter background noise and cannot simulate the nonlinear integration function of dendrites. Therefore, exploring dynamic memristors with volatility and the ability to integrate spatiotemporal information is crucial to improving the performance and development of neural networks.

[0004] In the field of neuromorphic computing research, the sandwich-structured memristor is an interface-engineered electronic device, and the core of its electrical performance regulation lies in the coordination between different interfaces. Therefore, people's research work is mainly focused on regulating and optimizing the interface of the memristor. Among them, the micro-nano structure of the film is one of the key technologies to achieve the interface regulation of the memristor. By introducing a variety of micro-nano structures such as nanopores, nanopillars, conical holes + nanofolds in the functional layer film, the ion transmission process can be significantly regulated. And the nanopore structure.

[0005] Due to its unique ability to finely control ions, it has been shown in previous digital memristors to reduce switching voltage and improve switching uniformity and durability. At the same time, nanopore structures have also shown significant advantages in the application research in the field of neuromorphic computing, especially in the nanopore structure's ability to directional transport and finely control ions, which is crucial for simulating biological nervous systems.

[0006] In recent years, people have conducted extensive research on memristors based on nanopore structures. For example, the transition between high and low resistance states was achieved using a nanopore structure memristor stacked with Al / PVK / ITO. However, the current research on nanopore structure memristors is still mainly based on single-layer structures. The conductive filaments of single-layer nanopore structure memristors have problems of randomness and fragility, resulting in high operating voltage, small dynamic range, poor data stability, high control cost, and single working mode, which is not conducive to simulating biological nervous systems. Summary of the invention

[0007] In view of the above-mentioned problems existing in the memristor in the prior art, the present invention provides a method for preparing a reconfigurable memristor based on a nanopore structure, introduces a solution spin coating method to prepare a polymer film layer with a nanopore structure, and utilizes its nanopore structure to provide a fast channel for the migration of ions; and by changing the thickness of the small molecule resistive switching layer film prepared by vacuum evaporation technology, it is finally possible to realize the conversion of the reconfigurable memristor between a resistive memory and a dynamic memristor, so that the reconfigurable memristor can simultaneously have the advantages of efficient information storage of the resistive memory and the advantages of the nonlinear integration function of simulating dendrites of the dynamic memristor.

[0008] In order to achieve the above object, the present invention is achieved through the following technical solutions:

[0009] The present invention is a method for preparing a reconfigurable memristor based on a nanopore structure, wherein a nanopore polymer film layer is prepared on a bottom electrode, a small molecule resistive switching layer is prepared on the nanopore polymer film layer, and finally a top electrode is prepared on the small molecule resistive switching layer, and specifically comprises the following steps:

[0010] Step 1, preparing a low dielectric constant material polymer solution, and pretreating the polymer solution to obtain a completely dispersed and uniform polymer solution;

[0011] Step 2, substrate pretreatment: select a substrate, clean the substrate and dry it, and then treat the dried substrate with ultraviolet ozone;

[0012] Step 3: Spin coating the substrate treated in step 2 by solution spin coating, with the spin coater rotating at a high speed of 6000 rpm for 30 seconds.

[0013] Step 4, subjecting the sample spin-coated in step 3 to low-temperature annealing in a vacuum drying oven to obtain a nanoporous polymer film layer having a nanoporous structure;

[0014] Step 5, placing the substrate coated with the nanoporous polymer film layer into a coating chamber of a vacuum evaporation coating system, and using a quartz crystal oscillator to control the thickness of the nanoporous polymer film layer; after the vacuum evaporation is completed, cooling it to room temperature to obtain a small molecule resistive switching layer film;

[0015] Step 6: Take out the substrate in step 5 and wait for the vacuum degree in the chamber to be lower than 4.5×10 -4 After pa, the top electrode is evaporated, and due to the self-templating effect of the nanopores, the top electrode has a nanopore structure;

[0016] After the top electrode is deposited in step 7 and step 6, the top electrode in step 6 is placed in a vacuum of less than 4.5×10 -4 After cooling to room temperature in a pa environment and taking it out, a single reconfigurable memristor device based on a nanopore structure can be obtained.

[0017] A further improvement of the present invention is that in step 4, the nanopore diameter of the nanoporous polymer film layer is 400-800 nm, and the size of the pore diameter is controlled by solution spin coating.

[0018] A further improvement of the present invention is that in step 5, the thickness of the small molecule resistive switching layer film is 20 to 60 nm, and in the process of preparing the reconfigurable memristor, the thickness of the small molecule resistive switching layer film is controlled to realize the conversion of the reconfigurable memristor between the resistive memory and the dynamic memristor, so that the reconfigurable memristor exhibits different electrical characteristics and dynamic characteristics.

[0019] A further improvement of the present invention is that in step 4, the low-temperature annealing temperature is 80° C. and the annealing time is 30 minutes.

[0020] A further improvement of the present invention is that in step 5, the vacuum degree is controlled at 4×10 -4 pa~6×10 -4 pa, evaporation rate

[0021] A further improvement of the present invention is that in step 6, the top electrode is deposited by evaporating metal and using a stripe pattern mask, and the vacuum degree is controlled at 4×10 -4 pa~6×10 -4 pa, evaporation rate A quartz crystal oscillator is used to control the thickness of the top electrode to be between 60 and 80 nm.

[0022] A further improvement of the present invention is that in step 5, the small molecule resistive switching layer material is one of porphyrin, porphyrin zinc, porphyrin copper and porphyrin iron.

[0023] The present invention provides a reconfigurable memristor based on a nanopore structure, wherein the reconfigurable memristor comprises, from bottom to top, a substrate and a bottom electrode formed on the substrate, a nanopore polymer film layer, a small molecule resistive switching layer, and a top electrode, wherein a polymer film layer with a nanopore structure is provided between the bottom electrode and the small molecule resistive switching layer, and the small molecule resistive switching layer and the top electrode both present a periodically grown nanopore micro-nanostructure morphology by utilizing the self-templating effect of the nanopore polymer film layer.

[0024] A further improvement of the present invention is that the polymer solution in step 1 is dissolved in a low boiling point solvent with a concentration of 4 to 10 mg / ml, and the low boiling point solvent is chloroform.

[0025] A further improvement of the present invention is that: step 2, substrate pretreatment specifically includes:

[0026] Step 2.1, select a suitable substrate material, and use acetone, anhydrous ethanol, and deionized water in an ultrasonic cleaning machine for 10 minutes respectively. After the deionized water cleaning is completed, use a high-purity nitrogen gun to remove moisture from the surface of the substrate, and finally put it into an electric heating blast drying oven at 120°C for 20 minutes;

[0027] Step 2.1: subject the indium tin oxide bottom electrode dried in step 2.1 to ultraviolet ozone treatment for 10 minutes to complete the pretreatment of the substrate.

[0028] A further improvement of the present invention is that the material of the nanoporous polymer film layer in step 4 is polyvinyl carbazole, poly(2-vinylnaphthalene) polymethyl methacrylate (Poly(methylmethacrylate) or polystyrene), which serves as an ion transport layer, and the thickness of the nanoporous polymer film layer is 40 to 60 nm.

[0029] A further improvement of the present invention is that the top electrode material is aluminum, copper, silver, gold, or titanium, and is used for inputting external power supply electrical signals.

[0030] A further improvement of the present invention is that the substrate is made of a glass sheet or a highly doped silicon sheet for connecting to the ground.

[0031] The beneficial effects of the present invention are:

[0032] The reconfigurable memristor of the present invention uses a nanoporous polymer film layer prepared by a solution spin coating method to provide a fast channel for the migration of ions inside the device, which can effectively reduce the switching voltage and current of the memristor and improve the stability of the memristor. It has stable multi-level switching characteristics in multiple voltage ranges and has better performance than the memristor with micro-nano structure in the prior art.

[0033] The reconfigurable memristor of the present invention can realize the conversion between the resistive memory and the dynamic memristor through the same device structure, so that the reconfigurable memristor exhibits different electrical characteristics and dynamic characteristics, thereby being able to simultaneously meet the requirements of both resistive memory and dynamic memristor devices, and providing a method for simplifying the design of circuits that realize the synergistic effect of neurons and synapses.

[0034] The present invention naturally combines a low-temperature annealing process in the device preparation process without additional treatment and steps, thereby improving the stability of the organic memristor device and providing sufficient guarantee for the device to work in a room temperature environment. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a schematic diagram of the device structure of the reconfigurable memristor based on the nanopore structure of the present invention.

[0036] Figure 2 The AFM morphology images of porphyrin zinc films with nanopore structures of different thicknesses prepared by the vacuum evaporation coating technology of the present invention are shown.

[0037] Figure 3 This is an AFM morphology image of a 60nm thick porphyrin copper film with a nanopore structure prepared by the vacuum evaporation coating technology of the present invention.

[0038] Figure 4 This is a typical current-voltage curve of the resistive random access memory of the present invention when the thickness of the porphyrin zinc film is 20 nm.

[0039] Figure 5 It is a Set voltage distribution diagram of 100 current-voltage curves of the resistive random access memory when the thickness of the porphyrin zinc film is 20 nm.

[0040] Figure 6 It is the maintenance characteristic of the resistive random access memory for 1000s under different limiting currents when the thickness of the porphyrin zinc film is 20nm.

[0041] Figure 7 The present invention is a 50-cycle continuous current-voltage curve of the dynamic memristor when a voltage of 0V to -10V to 0V is applied when the thickness of the porphyrin zinc film is 60nm.

[0042] Figure 8It is a test curve of dynamic characteristics of the dynamic memristor with different pulse amplitudes when the thickness of the porphyrin zinc film is 60 nm.

[0043] Fig. 9 The present invention is a relaxation characteristic curve of different pulse numbers of the dynamic memristor when the thickness of the porphyrin zinc film is 60nm. Among them: 4-bottom electrode; 3-nanopore polymer film layer; 2-small molecule resistive switching layer; 1-top electrode. DETAILED DESCRIPTION

[0044] The following will disclose the embodiments of the present invention with drawings. For the purpose of clear description, many practical details will be described together in the following description. However, it should be understood that these practical details should not be used to limit the present invention. That is to say, in some embodiments of the present invention, these practical details are not necessary.

[0045] like Figure 1 As shown, the present invention provides a reconfigurable memristor based on a nanopore structure, which includes, from bottom to top, a substrate and a bottom electrode formed on the substrate, a nanopore polymer film layer, a small molecule resistive switching layer, and a top electrode, a polymer film layer with a nanopore structure is provided between the top electrode and the small molecule resistive switching layer, and the small molecule resistive switching layer and the top electrode both present a periodically grown nanopore micro-nanostructure morphology by utilizing the self-templating effect of the nanopore polymer film layer.

[0046] Embodiment 1

[0047] Using porphyrin zinc as the small molecule resistive layer, a reconfigurable memristor with a nanopore structure was designed and prepared by a layer-by-layer stacking approach.

[0048] During the actual preparation, the laboratory room temperature was maintained at about 20°C and the indoor humidity was maintained below 30%.

[0049] Specifically, the preparation method of the reconfigurable memristor based on the nanopore structure comprises the following steps:

[0050] Step 1, prepare a polyvinyl carbazole solution with a molecular weight of Mw=90000, the solvent used is a low boiling point solvent chloroform, the solution concentration is 5 mg / ml, the prepared solution is placed at room temperature and pressure for one night, and the impurities of the solution are filtered out to obtain a completely dispersed and uniform polyvinyl carbazole solution;

[0051] Step 2: substrate pretreatment, specifically comprising the following steps:

[0052] Step 2.1. First, the bottom electrode indium tin oxide and the glass substrate are cleaned by using acetone, anhydrous ethanol, and deionized water in a 90KHz ultrasonic cleaning machine for 10 minutes each.

[0053] Step 2.2. Use a high-purity nitrogen gun to blow away the moisture on the surface of the substrate, and place it in an electric hot air drying oven preheated to 120°C for 30 minutes for drying;

[0054] Step 2.3. Place the dried substrate in a UV ozone machine for 10 minutes of UV ozone treatment.

[0055] Step 3, using a solution spin coating method to spin coat the prepared polyvinyl carbazole solution on the substrate treated in step 2 in a humid environment with a humidity of 80-85%, the spin coater speed is high speed 6000 rpm for 30 seconds, and the thickness of the nanoporous structure polyvinyl carbazole film is controlled to be about 45nm, and the film thickness is determined by a step profiler;

[0056] Step 4: subjecting the nanoporous structure polyvinyl carbazole film spin-coated in step 3 to low-temperature annealing in a vacuum drying oven to obtain a nanoporous polymer film layer with a nanoporous structure; the low-temperature annealing temperature is 80° C., and the annealing time is 30 minutes.

[0057] Step 5: Place the substrate coated with the nanoporous polyvinyl carbazole film into the coating chamber of the vacuum evaporation coating system, and control the vacuum degree at 4×10 -4 pa~6×10 -4 pa, evaporation rate A quartz crystal oscillator is used to control the thickness of the film to be between 20 and 60 nm; after the evaporation is completed, the film is annealed and cooled to room temperature to obtain porphyrin zinc films of different thicknesses; the thickness of the obtained porphyrin zinc film is determined by a step profiler;

[0058] Step 6: Take the substrate in step 5 out of the coating chamber of the vacuum evaporation coating system and wait until the vacuum degree in the chamber is lower than 4.5×10 -4 After pa, the top electrode was evaporated. The top electrode material was aluminum and the evaporation rate was By evaporating metal and using a mask, a metal aluminum layer with a nanoporous structure of about 70nm in thickness is obtained. The film thickness is measured by a step profiler. Due to the self-templating effect of the nanopores, the top electrode has a nanoporous structure.

[0059] After the top electrode is deposited in step 7 and step 6, the top electrode in step 6 is placed in a vacuum of less than 4.5×10 -4 After cooling to room temperature in a pa environment and taking it out, a single reconfigurable memristor device based on a nanopore structure can be obtained.

[0060] The reconfigurable memristor based on the nanopore structure prepared in this embodiment is Figure 1As shown in the figure, the device is prepared by a cross-stack structure. The structure from bottom to top is the bottom electrode, nanoporous polymer film layer, small molecule resistive switching layer, and metal top electrode.

[0061] Figure 2 a and Figure 2 b is an atomic force microscope (AFM) morphology image of a 20 nm thick nanoporous structure porphyrin zinc film prepared by vacuum evaporation technology in the example, with a roughness Rq=3.58 nm, and an average pore size of the nanopores in the film is about 600-800 nm.

[0062] Figure 2 c and Figure 2 d is an atomic force microscope (AFM) morphology image of a 60 nm thick nanoporous structure porphyrin zinc film prepared by vacuum evaporation technology in the same embodiment, the root mean square roughness Rq=6.30 nm, and the average pore size of the nanopores in the film is about 400-600 nm.

[0063] It can be seen that due to the conformal growth characteristics of the film during vacuum evaporation, the porphyrin zinc film on the nanoporous structure polyvinyl carbazole film still has the morphological characteristics of the nanoporous structure film.

[0064] The relevant performance tests of the reconfigurable memristor based on the nanopore structure are as follows:

[0065] Figure 4 The typical current-voltage characteristic curve of the resistive random access memory based on 20nm thick porphyrin zinc film under 4V positive voltage and -4V negative voltage scanning under 0.05V step voltage and 200μA limiting current test conditions. It can be seen from the figure that the device is a resistive random access memory, the current level increases or decreases abruptly, and the current-voltage curve is stable. The curve has obvious Set and Reset processes, and the switching ratio is greater than 10 2 .

[0066] Figure 5 This is the distribution diagram of the Set voltage in the current-voltage characteristic curve of the resistive memory based on 20nm thick porphyrin zinc film under 100 consecutive scans of 4V positive voltage and -4V negative voltage under the test conditions of 0.05V step voltage and 200μA limiting current. The inset is the distribution histogram of the Set voltage. It can be seen from the figure that the Set voltage is concentrated in 1-1.5V in 100 consecutive cycles, indicating that the resistive memory has stable switching characteristics.

[0067] Figure 6 The 1000s maintenance characteristics of the resistive random access memory based on the 20nm thick porphyrin zinc film under different limiting currents, the read pulse is 1V, 100ms, and the bottom row represents the high resistance state (HRS), such as Figure 6As shown, there are at least 8 conductance levels that can remain stable.

[0068] Figure 7 This is the current-voltage characteristic curve of a dynamic memristor based on a 60nm thick porphyrin zinc film under 50 consecutive 0V~-10V~0V negative voltage scans. Under the 0.05V step voltage test condition, the current increases with the increase in the number of scans, and the current-voltage curve is stable. The dynamic current switching ratio is about 4600 times, which is much higher than the current switching ratio of current dynamic memristors.

[0069] Figure 8 The dynamic characteristic test curve of the dynamic memristor based on the 60nm thick porphyrin zinc film under different pulse amplitudes, the input pulse is -8V, -9V, -10V, -11V, -12V, 500ms, the read pulse is -2V, 2000ms, and the illustration is the relaxation curve corresponding to the different pulse amplitudes. Figure 8 As shown, the relaxation changes corresponding to pulses of different amplitudes are different, highlighting the dynamic memristor's ability to finely control pulse currents of different amplitudes.

[0070] Fig. 9 The relaxation characteristic curve of the dynamic memristor based on 60nm thick porphyrin zinc film under different numbers of voltage pulses, the input pulse is -12V, 200ms, the read pulse is -2V, 50ms, and the inset is the t1 value fitting curve corresponding to different curves. Fig. 9 As shown, different numbers of continuous pulses result in different relaxation changes under different stimulus accumulations. The adjustability of relaxation time under different pulse conditions greatly enriches the complexity of dynamic memristors in realizing reserve pool computing applications.

[0071] Embodiment 2

[0072] The preparation process of the nanoporous structure reconfigurable memristor using porphyrin copper as the small molecule resistive switching layer is the same as that of Example 1 except that the materials selected in the vacuum evaporation film preparation system are different. The thickness of the nanoporous porphyrin copper film is controlled to be about 60 nm, and the film thickness is determined by a step profiler.

[0073] Figure 3 a and Figure 3 b is an atomic force microscope (AFM) morphology image of a 60 nm thick nanoporous structure porphyrin copper film prepared by vacuum evaporation technology in Example, with a roughness Rq=7.13 nm, and an average pore size of the nanopores in the film of about 500-700 nm;

[0074] In Example 2, the AFM characterization analysis of the porphyrin copper prepared after the material of the vacuum evaporation film preparation system is set to porphyrin copper is as follows: Figure 3 As shown, Figure 2 The porphyrin zinc film prepared in the same vacuum evaporation film preparation system still has nanopores and the pore size of the nanopores has only increased by about 100nm, which is almost the same as the result of the AFM characterization analysis of porphyrin zinc. Therefore, the small molecule resistive layer can stably present a periodically grown nanopore micro-nanostructure morphology by utilizing the self-templating effect of the nanoporous polymer film layer, proving the controllability of the nanopores in the device film.

[0075] The above is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any technician in the relevant technical field, without departing from the scope of the technical solution of the present invention, makes any form of equivalent replacement or modification to the technical solution and technical content disclosed in the present invention, which does not depart from the content of the technical solution of the present invention and still falls within the protection scope of the present invention.

Claims

1. A method for preparing a reconfigurable memristor based on a nanopore structure, preparing a nanopore polymer film layer on a bottom electrode, preparing a small molecule resistive switching layer on the nanopore polymer film layer, and finally preparing a top electrode on the small molecule resistive switching layer, characterized in that: The preparation method of the reconfigurable memristor specifically comprises the following steps: Step 1, preparing a low dielectric constant material polymer solution, and pretreating the polymer solution to obtain a completely dispersed and uniform polymer solution; Step 2, substrate pretreatment: select a substrate, clean the substrate and dry it, and then treat the dried substrate with ultraviolet ozone; Step 3, using the polymer solution to perform spin coating on the substrate treated in step 2 by solution spin coating, with the spin coater rotating at a high speed of 6000 rpm for 30 seconds; Step 4, subjecting the sample spin-coated in step 3 to low-temperature annealing in a vacuum drying oven to obtain a nanoporous polymer film layer having a nanoporous structure; Step 5, placing the substrate coated with the nanoporous polymer film layer into a coating chamber of a vacuum evaporation coating system, and using a quartz crystal oscillator to control the thickness of the nanoporous polymer film layer; after the vacuum evaporation is completed, cooling it to room temperature to obtain a small molecule resistive switching layer film; Step 6: Take out the substrate in step 5 and wait for the vacuum degree in the chamber to be lower than 4.5×10 -4 After pa, the top electrode is evaporated, and due to the self-templating effect of the nanopores, the top electrode has a nanopore structure; After the top electrode is deposited in step 7 and step 6, the top electrode in step 6 is placed in a vacuum of less than 4.5×10 -4 By cooling it to room temperature in an environment of pa and taking it out, a single reconfigurable memristor device based on a nanopore structure can be obtained.

2. The method for preparing a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 4, the nanopore diameter of the nanoporous polymer film layer is 400-800 nm, and the size of the pore diameter is controlled by solution spin coating.

3. The method for preparing a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 5, the thickness of the small molecule resistive switching layer film is 20 to 60 nm. During the preparation of the reconfigurable memristor, the thickness of the small molecule resistive switching layer film is controlled to realize the conversion of the reconfigurable memristor between resistive memory and dynamic memristor, so that the reconfigurable memristor exhibits different electrical and dynamic characteristics.

4. The method for preparing a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 4, the low-temperature annealing temperature is 80° C. and the annealing time is 30 minutes.

5. The method for preparing a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 5, the vacuum degree is controlled at 4×10 -4 pa~6×10 -4 pa, evaporation rate 6. The method for preparing a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 6, the top electrode is deposited by evaporating metal and using a stripe pattern mask, and the vacuum degree is controlled at 4×10 -4 pa~6×10 -4 pa, evaporation rate A quartz crystal oscillator is used to control the thickness of the top electrode to be between 60 and 80 nm.

7. The method for preparing a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 5, the small molecule resistive switching layer material is one of porphyrin, porphyrin zinc, porphyrin copper, and porphyrin iron.

8. The method for preparing a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: A reconfigurable memristor based on a nanopore structure is obtained by the preparation method of the reconfigurable memristor. The reconfigurable memristor includes, from bottom to top, a substrate and a bottom electrode formed on the substrate, a nanopore polymer film layer, a small molecule resistive switching layer, and a top electrode. A polymer film layer with a nanopore structure is provided between the bottom electrode and the small molecule resistive switching layer. The small molecule resistive switching layer and the top electrode both present a periodically grown nanopore micro-nanostructure morphology by utilizing the self-templating effect of the nanopore polymer film layer.

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