Vaporization device for semiconductor process

Abstract

The present invention relates to a vaporizing device for a semiconductor process, comprising: a first atomizing unit for first atomizing a liquid source by using ultrasonic waves to vibrate the liquid source; a second atomization unit connected to the first atomization unit and configured to discharge the primarily atomized particles flowing in from the first atomization unit to a discharge port (orifice plate) at a carrier gas pressure to secondarily atomize the particles; and a vaporizing part which is connected to the second atomizing part and through which the secondary atomized particles flowing in from the second atomizing part pass and vaporize. Therefore, the atomization efficiency and the vaporization efficiency can be improved, the usage amount of liquid sources is reduced, and high-flow treatment is carried out.

Description

Technical Field

[0001] The present invention relates to a vaporization device for semiconductor processes, and more particularly to a vaporization device for semiconductor processes that can vaporize a liquid source more effectively. Background Art

[0002] In semiconductor processes, there is a deposition process for forming a thin film. In the deposition process, a source gas that becomes a thin film is supplied to a chamber and deposited on the surface of a wafer.

[0003] However, when the source material is in a liquid state at room temperature, it needs to be vaporized into a gas state, and a vaporization device is used at this time.

[0004] As Figure 1 shown, a conventional vaporization device 1 sprays a liquid source 2 and a carrier gas 3 together through a nozzle 4 for atomization, and then heats and vaporizes them through a vaporization chamber (not shown).

[0005] However, as described above, when atomizing the liquid source 2 by the pressure of the carrier gas 3, the size of the particles (droplets) is large, and the uniformity difference of the particles is also large, resulting in a problem of reduced vaporization efficiency.

[0006] The more the flow rate of the liquid source 2 to be vaporized increases, the more serious this problem becomes, and thus there is a problem of a decrease in the high-flow rate corresponding (processing) performance of the vaporization device 1.

[0007] In addition, the discharge port diameter of the nozzle 4 of the conventional vaporization device 1 is about 0.2 mm, which is very small, so the possibility of the discharge port being clogged by the highly viscous liquid source 2 (clogging issue) is very high.

[0008] The prior art is technical information that the inventor has or obtained in the process of deriving the present invention, and is not necessarily prior art publicly available to the general public before applying for the present invention.

[0009] Prior Art Documents

[0010] Patent Documents

[0011] (Patent Document 1) Korean Patent Publication No. 10-2124290 (authorized on June 11, 2020) Summary of the Invention

[0012] Technical Problem

[0013] In the process of solving the above problems, an object of the present invention is to provide a vaporization device for semiconductor processes that can reduce the size and uniformity difference of atomized particles, improve vaporization efficiency, facilitate high-flow rate correspondence, and prevent clogging of discharge holes.

[0014] Moreover, another object of the present invention is to provide a vaporization device for semiconductor processes that can improve the atomization efficiency and reduce the usage amount of the liquid source.

[0015] Furthermore, an object of the present invention is to provide a vaporization device for semiconductor processes that can increase the heat transfer efficiency and heat transfer amount to the source particles to be atomized, improve the vaporization performance, and perform high-flow processing.

[0016] The problems to be solved by the present invention are not limited to those mentioned above, and those of ordinary skill in the technical field to which the present invention pertains can clearly understand other technical problems to be solved that are not mentioned through the following description.

[0017] Solution to the problem

[0018] The vaporization device for semiconductor processes according to an embodiment of the present invention includes: a first atomization unit that first atomizes a liquid source by vibrating it using ultrasonic waves; a second atomization unit that is connected to the first atomization unit and discharges the primary atomized particles flowing in from the first atomization unit to an ejection port (orifice plate) under carrier gas pressure for secondary atomization; and a vaporization unit that is connected to the second atomization unit and through which the secondary atomized particles flowing in from the second atomization unit pass and are vaporized.

[0019] Inside the first atomization unit, a first atomization space for the liquid source to flow in is formed. The first atomization space has an ultrasonic vibrator, and the ultrasonic vibrator is connected to an ultrasonic controller that supplies high-frequency power.

[0020] The ultrasonic controller has a high-frequency power oscillation function, can adjust the power of the supplied power, and adjust the frequency of the ultrasonic waves generated in the ultrasonic vibrator.

[0021] The ultrasonic controller has a frequency scanning function of finding the optimal vibration frequency according to the flow pattern and flow rate of the liquid source, and adjusts the power of the supplied power to generate ultrasonic waves at the optimal vibration frequency.

[0022] The second atomization unit includes: a mixing space where the primary atomized particles flowing in from the first atomization unit and the carrier gas flowing in from the outside are mixed; the ejection port formed at one end of the mixing space; and a second atomization space formed at the other side of the ejection port.

[0023] The second atomization unit is formed with a tangential flow path that penetrates the second atomization unit in the tangential direction of the mixing space, and the tangential flow path is connected to a carrier gas inlet pipe.

[0024] The vaporization unit has a circular tube shape, and a cylindrical flow path structure having the same diameter as the inner diameter of the vaporization unit is inserted inside.

[0025] An external heater is provided outside the vaporization section, and an internal heater is provided inside the vaporization section.

[0026] The internal heater can be inserted and arranged inside the flow path structure.

[0027] A spiral flow path is formed on the outer peripheral surface of the flow path structure.

[0028] A disk-shaped flange is formed at the lower end of the flow path structure, and a plurality of inflow holes are formed in the radial direction above the flange. The plurality of inflow holes are connected to a discharge hole formed through the center of the flange.

[0029] The vaporization section is combined with the end plate, and a source gas discharge pipe connected to the discharge hole is formed in the center of the end plate.

[0030] Advantages of the Invention

[0031] As described above, the vaporization device for semiconductor processes according to the present invention can reduce the size and uniformity difference of atomized particles, improve the vaporization efficiency, facilitate high-flow correspondence, and prevent clogging of the ejection holes.

[0032] Moreover, the vaporization device for semiconductor processes according to the present invention can improve the atomization efficiency and reduce the usage amount of the liquid source.

[0033] Furthermore, the vaporization device for semiconductor processes according to the present invention can increase the heat transfer efficiency and heat transfer amount to the atomized source particles, improve the vaporization performance, and perform high-flow processing.

[0034] The advantages of the present invention are not limited to those mentioned above. Those of ordinary skill in the technical field to which the present invention pertains can clearly understand other advantages not mentioned through the following description. Description of the Drawings

[0035] Figure 1 It is a schematic diagram of a vaporization device for semiconductor processes according to the prior art.

[0036] Figure 2 It is a perspective view of a vaporization device for semiconductor processes according to an embodiment of the present invention.

[0037] Figure 3 It is a cross-sectional view of a vaporization device for semiconductor processes according to an embodiment of the present invention.

[0038] Figure 4 It is a diagram showing the heater installation state of a vaporization device for semiconductor processes according to an embodiment of the present invention.

[0039] Figure 5 It is along Figure 3The cross-sectional view of the V-V line is a plan view of the second atomization unit, which is a structure of the vaporization device for semiconductor processes according to an embodiment of the present invention.

[0040] Figure 6 It is a perspective view of the flow path structure, which is a structure of the vaporization device for semiconductor processes according to an embodiment of the present invention.

[0041] (Description of reference numerals)

[0042] 10: First atomization unit 11: Liquid source inlet pipe

[0043] 12: First atomization space 13: Ultrasonic vibrator

[0044] 14: Protrusion 15, 26, 31a, 32a, 52, 62: Bolt holes

[0045] 20: Second atomization unit 21: Carrier gas inlet pipe

[0046] 22: Tangential flow path 23: Mixing space

[0047] 24: Discharge port 25: Second atomization space

[0048] 30: Vaporization unit 31: Upper flange

[0049] 32: Lower flange 40: Flow path structure

[0050] 41: Spiral flow path 42: Inlet hole

[0051] 43: Discharge hole 44: Flange

[0052] 50: End plate 51: Source gas discharge pipe

[0053] 60: Spacer 61: Receiving hole

[0054] 71, 72: Seals 80: External heater

[0055] 81, 91: Heating wires 90: Internal heater

[0056] 100: Ultrasonic controller Detailed implementation

[0057] In the present invention, for the purpose of differentiating from the prior art, clarity, and facilitating the understanding of the technology, the drawings are exaggerated. Moreover, the following terms are defined in consideration of the functions in the present invention and may vary according to the intentions or conventions of users and operators. Therefore, these terms should be defined by the technical content throughout this specification. Additionally, the embodiments are merely illustrative matters of the structural elements disclosed in the claims of the present invention and do not limit the scope of the claims of the present invention. The scope of the claims should be interpreted based on the technical concept throughout the specification of the present invention.

[0058] Throughout the specification, when referring to a structure "including" another structure, unless there is a particularly contrary description, it means that other structures may also be included, rather than excluding other structures.

[0059] In addition, when referring to a structure "connected", "coupled", or "joined" to another structure, it not only refers to the case of "directly connected", "directly coupled", or "directly joined", but also refers to the case of "connected with other structures intervening therebetween", "coupled with other structures intervening therebetween", or "joined with other structures intervening therebetween". Conversely, when referring to a structure "directly connected", "directly coupled", or "directly joined" to another structure, it should be understood that there are no other structures in between.

[0060] In addition, when using directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends", etc., these are terms used illustratively for the orientation of the disclosed drawings. Therefore, they cannot be restrictively interpreted. When using terms such as "first", "second", etc., they are terms used to distinguish each structure and cannot be restrictively interpreted.

[0061] To more clearly illustrate the features of the embodiments of the present invention, the detailed descriptions of matters well-known to those of ordinary skill in the technical field to which the following embodiments belong will be omitted. And in the drawings, the detailed descriptions of parts irrelevant to the description of the embodiments will be omitted.

[0062] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0063] Figure 2 It is a perspective view of a vaporization device for semiconductor processes according to an embodiment of the present invention. Figure 3 It is a cross-sectional view of a vaporization device for semiconductor processes according to an embodiment of the present invention. Figure 4 It is a diagram showing the heater installation state of a vaporization device for semiconductor processes according to an embodiment of the present invention. Figure 5 It is along Figure 3 The cross-sectional view taken along the V-V line is a plan cross-sectional view of the second atomization part, which is a structure of a vaporization device for semiconductor processes according to an embodiment of the present invention. Figure 6The perspective view of the flow path structure as a structure of the vaporization device for semiconductor processes according to an embodiment of the present invention.

[0064] Refer to Figures 1 to 6 , the vaporization device for semiconductor processes according to an embodiment of the present invention includes a first atomization unit 10, a second atomization unit 20, and a vaporization unit 30.

[0065] Moreover, the vaporization device for semiconductor processes according to an embodiment of the present invention may further include a flow path structure 40, an external heater 80, and an internal heater 90.

[0066] Moreover, the vaporization device for semiconductor processes according to an embodiment of the present invention may further include an ultrasonic controller 100.

[0067] The above-mentioned first atomization unit 10 can vibrate the liquid source by using ultrasonic waves to atomize it for the first time. The above-mentioned first atomization unit 10 is an ultrasonic atomizer provided at the liquid source introduction part of the vaporization device, and various commercial products can be used. A first atomization space 12 for introducing the liquid source may be formed inside the above-mentioned first atomization unit 10. That is, a liquid source inflow pipe 11 is formed on one side of the first atomization unit 10, and the above-mentioned first atomization space 12 connected to the above-mentioned liquid source inflow pipe 11 is formed inside. An ultrasonic vibrator 13 is provided inside the above-mentioned first atomization space 12. The above-mentioned first atomization space 12 is connected to a discharge port (not shown) in the direction opposite to the above-mentioned liquid source inflow pipe 11.

[0068] Moreover, the above-mentioned ultrasonic vibrator 13 is connected to the above-mentioned ultrasonic controller 100 that supplies high-frequency power, and the above-mentioned ultrasonic controller 100 is connected to a power supply (not shown).

[0069] The above-mentioned ultrasonic controller 100 applies high-frequency power to the above-mentioned ultrasonic vibrator 13, and the above-mentioned ultrasonic vibrator 13 converts the high-frequency power into mechanical vibration to generate ultrasonic waves. The liquid source (TEOS, TMA, TiCl4, etc.) flowing into the above-mentioned liquid source inflow pipe 11 is atomized into fine particles (droplets) by the above-mentioned ultrasonic waves in the above-mentioned first atomization space 12 and discharged to the above-mentioned second atomization unit 20.

[0070] As described above, the particles of the liquid source atomized for the first time by ultrasonic waves are much smaller in size and have excellent particle size uniformity compared to the particles atomized solely by the carrier gas pressure in the past, which is beneficial for vaporization.

[0071] The above-mentioned ultrasonic controller 100 basically has a high-frequency power oscillation function, adjusts (range adjustment can be set) the power of the supplied power (Power, working efficiency (W)), and adjusts the frequency of the ultrasonic waves generated in the above-mentioned ultrasonic vibrator 13.

[0072] Furthermore, the above ultrasonic controller 100 has a frequency scan function to find the optimal vibration frequency based on the flow pattern and flow rate of the above liquid source. Therefore, the power of the supplied electricity can be adjusted according to the flow pattern and flow rate of the above liquid source to generate ultrasonic waves at the optimal frequency with the maximum atomization efficiency, maximizing the atomization efficiency.

[0073] The above second atomization unit 20 is connected to the discharge end side of the above first atomization unit 10. The above second atomization unit 20 high-pressure sprays the source particles that are first atomized and discharged in the above first atomization unit 10 through the discharge port (orifice plate) 24 by the pressure of the carrier gas flowing in from the outside to perform secondary atomization.

[0074] For this purpose, the above second atomization unit 20 may include: a mixing space 23 where the primary atomized particles flowing in from the above first atomization unit 10 and the carrier gas flowing in from the outside are mixed; the discharge port 24 formed at one end of the above mixing space 23; and a second atomization space 25 formed at the other side of the above discharge port 24. That is, inside the above second atomization unit 20, the above mixing space 23 is formed in the central part, the above second atomization space 25 is formed below the above mixing space 23, and the above discharge port 24 is formed between the above mixing space 23 and the above second atomization space 25. The latter half of the above mixing space 23 (the lower half of the figure), that is, the part before the above discharge port 24, has a shape with a gradually narrowing diameter along the fluid flow direction, and the part after the above discharge port 24 has a shape with a gradually widening diameter again. In this way, in the part where the diameter widens after passing through the above discharge port 24, a sharp pressure drop causes secondary atomization to occur. The part after the above discharge port 24 and the diffusion space formed at the inlet end side of the above vaporization unit 30 are collectively referred to as the above second atomization space 25.

[0075] On the other hand, a tangential flow path 22 that penetrates the body of the above second atomization unit 20 is formed in the tangential direction of the above mixing space 23 (the flat cross-sectional shape is circular) at the inlet side part of the above mixing space 23, and the inlet side of the above tangential flow path 22 is connected to the carrier gas inlet pipe 21.

[0076] Therefore, the carrier gas flowing in through the above carrier gas inlet pipe 21 flows into the above mixing space 23 from the inlet side part of the above mixing space 23 to the above tangential direction of the inner circumferential surface through the above tangential flow path 22. Therefore, the above carrier gas forms a swirl inside the above mixing space 23, whereby the primary atomized particles flowing from the above first atomization unit 10 to the above second atomization unit 20 are evenly diffused and mixed throughout the above mixing space 23.

[0077] Thereafter, the primary atomized particles are discharged at high speed through the above-mentioned discharge port 24 into the above-mentioned second atomization space 25 by means of a carrier gas, and secondary atomization is achieved through a sharp pressure drop, resulting in finer particles.

[0078] As described above, the source particles atomized into fine particles by ultrasonic waves in the above-mentioned first atomization unit 10 pass through the above-mentioned discharge port 24 of the above-mentioned second atomization unit 20 in a uniformly mixed state, so that the phenomenon of the above-mentioned discharge port 24 being blocked by the above-mentioned liquid source does not occur.

[0079] The above-mentioned vaporization unit 30 is connected to the above-mentioned second atomization unit 20, and the secondary atomized particles flowing in from the above-mentioned second atomization unit 20 can pass through it and be vaporized.

[0080] That is, the above-mentioned vaporization unit 30 is connected to the outlet end side of the above-mentioned second atomization unit 20. The above-mentioned vaporization unit 30 is a circular tubular member, and circular flanges 31 and 32 are respectively formed at both ends thereof. The above-mentioned flow path structure 40 having a cylindrical shape with the same diameter as the inner diameter of the above-mentioned vaporization unit 30 can be inserted into the inside of the above-mentioned vaporization unit 30.

[0081] The inside of the above-mentioned vaporization unit 30 is simply formed as a free space, and the finely atomized source particles can be vaporized toward the outlet (source gas discharge pipe 51) side. Heaters 80 and 90 can be provided as a vaporization heat supply unit for more active vaporization. The heaters 80 and 90 will be described later.

[0082] The above-mentioned flow path structure 40 is a member inserted into the inside of the above-mentioned vaporization unit 30 to form a moving path for the atomized particles mixed with the carrier gas, that is, a flow path, which is also a structure that can achieve more effective heat transfer and double the vaporization performance.

[0083] The above-mentioned flow path structure 40 is a cylindrical member having the same diameter as the inner diameter of the above-mentioned vaporization unit 30, and a circular plate-shaped flange 44 is formed at the lower end, that is, the outlet side end.

[0084] A spiral-shaped flow path, that is, a spiral flow path 41, is formed on the outer peripheral surface of the above-mentioned flow path structure 40 over the entire length direction. When the above-mentioned flow path structure 40 is inserted into the inside of the above-mentioned vaporization unit 30, the inlet side end of the above-mentioned spiral flow path 41 is connected to the above-mentioned second atomization space 25. In the set state, the outer peripheral surface of the above-mentioned flow path structure 40 is in close contact with the inner peripheral surface of the above-mentioned vaporization unit 30, and the carrier gas including the atomized particles moves along the above-mentioned spiral flow path 41.

[0085] Near the outlet side end of the above-described flow path structure 40, that is, a plurality of inflow holes 42 are formed in the upper part of the above-described flange 44 in the radial direction, and the plurality of inflow holes 42 are connected to a discharge hole 43 formed through the center of the above-described flange 44. Therefore, the gas flowing along the above-described spiral flow path 41 is discharged to the outside of the above-described flow path structure 40 through the above-described inflow holes 42 and the above-described discharge hole 43.

[0086] A end plate 50 is fastened to the outlet end side flange (lower flange 32) of the above-described vaporization unit 30. The above-described end plate 50 closes the outlet side opening of the above-described vaporization unit 30, seals the inside of the above-described vaporization unit 30 from the outside, and prevents the above-described flow path structure 40 from detaching from the outside of the above-described vaporization unit 30. And, a source gas discharge pipe 51 is formed at the center of the outer side surface of the above-described end plate 50, and in the installed state, the above-described source gas discharge pipe 51 is connected to the above-described discharge hole 43 of the above-described flow path structure 40.

[0087] Therefore, the source gas that has changed from the atomized particles to the gas state through the above-described vaporization unit 30 can be discharged through the above-described source gas discharge pipe 51.

[0088] As described above, the secondary atomized particles flowing from the above-described second atomization unit 20 into the above-described vaporization unit 30 and the carrier gas together follow the above-described spiral flow path 41 of the above-described flow path structure 40 via a long path. At this time, heat transferred from the above-described heaters 80, 90 provided inside and outside the above-described vaporization unit 30 is absorbed and vaporized. That is, the secondary atomized particles absorb a sufficient amount of vaporization heat while moving a long path, and thus can be completely vaporized without leaving particles in the droplet state.

[0089] The above-described heaters 80, 90 may include an external heater 80 provided outside the above-described vaporization unit 30 and an internal heater 90 provided inside the above-described vaporization unit 30. The above-described internal heater 90 may be inserted and provided inside the above-described flow path structure 40. The above-described external heater 80 is basically provided, and the above-described internal heater 90 may be further applied as needed. Hot wires 81, 91 that generate heat by supplying power are respectively provided inside the above-described external heater 80 and the above-described internal heater 90 to generate heat, and the generated heat is transferred to the source particles secondarily atomized by the above-described vaporization unit 30 to provide vaporization heat.

[0090] As described above, heat is generated both inside and outside the vaporization unit 30, and sufficient heat is supplied to the entire inner space of the above-described vaporization unit 30 to smoothly transfer the vaporization heat to the secondary atomized source particles flowing through the inside of the above-described vaporization unit 30 to actively achieve vaporization.

[0091] Although the above-mentioned respective components are not shown in the drawings, they can be assembled with bolts and nuts. The above-mentioned respective components are in the shape of a circular plate or a cylinder, and a circular plate-shaped flange is formed at the connecting end of the cylindrical component. Therefore, bolt holes 15, 26, 31a, 32a, 52 are formed in the flange of the first atomization unit 10, the entire body of the second atomization unit 20, the upper flange 31 and the lower flange 32 of the vaporization unit 30, and the end plate 50 in a manner corresponding to the corresponding components, and nuts can be tightened on the bolts passing through them for bonding. This bonding structure is only an example, and various assembly structures can be applied.

[0092] Moreover, as in the first atomization unit 10 mentioned above, when a circular protrusion 14 is formed at the connecting portion, there is a free space equivalent to the length of the protrusion 14 between the component to be bonded (the second atomization unit 20). In order to fill this space, a circular plate-shaped spacer 60 can be used.

[0093] The above-mentioned spacer 60 is interposed between the first atomization unit 10 and the second atomization unit 20, and a receiving hole 61 for receiving the protrusion 14 is formed in the center. Bolt holes 62 are also formed at positions of the spacer 60 corresponding to the bolt holes 15, 26, 31a, 32a, 52.

[0094] Furthermore, seals 71, 72 for preventing gas leakage can be provided between the first atomization unit 10 and the spacer 60 and between the spacer 60 and the second atomization unit 20. Although not shown in the drawings, seals or sealing rings can also be provided between the components connected to the upper flange 31 and the lower flange 32 of the vaporization unit 30.

[0095] As described above, for the vaporization device for semiconductor processes according to the embodiments of the present invention, the introduced liquid source is first atomized in the first atomization unit 10 using ultrasonic vibration, and is second atomized in the second atomization unit 20 by means of the carrier gas pressure. When atomized for the first time using ultrasonic waves, it has become a state with smaller and more uniform particles compared to the past. By second atomizing it by means of the pressure of the above-mentioned carrier gas, the liquid source is in a state of very fine and uniformly sized particles. This is very beneficial for vaporization.

[0096] In particular, in the first atomization unit 10, the ultrasonic controller 100 is used to achieve optimal frequency scanning. Regardless of the changes in the type and flow rate of the liquid source, atomization is always achieved with the best efficiency, and a larger amount of the liquid source can be atomized in a better state (a state with small particle size and excellent size uniformity), which also helps to improve the vaporization efficiency.

[0097] Further, the second atomization unit 20 described above forms the conical mixing space 23, and the carrier gas flows in at a high pressure and high speed through the tangential flow path 22 formed in the tangential direction, so that a strong vortex is formed in the mixing space 23, and the atomized particles flowing from the first atomization unit 10 to the second atomization unit 20 are uniformly mixed into the carrier gas as a whole.

[0098] As described above, the flow in the state of uniformly mixing the source material with small particle size and excellent particle uniformity flows into the vaporization unit 30, flows along the spiral flow path 41 for a long path, and at this time, receives a sufficient amount of heat from the external heater 80 and the internal heater 90, so that the atomized particles are vaporized without residue, greatly improving the vaporization efficiency and vaporization performance.

[0099] As described above, the atomization efficiency and vaporization efficiency of the vaporization device for semiconductor processes according to the embodiments of the present invention are very excellent, so the usage amount of the liquid source is reduced, the cost-saving effect is achieved, and the advantage of high-flow processing can be achieved.

[0100] As described above, the vaporization device for semiconductor processes according to the present invention can reduce the size and uniformity difference of atomized particles, improve the vaporization efficiency, is conducive to high-flow response, prevent the clogging of the discharge holes, can improve the atomization efficiency, reduce the usage amount of the liquid source, can increase the heat transfer efficiency and heat transfer amount to the source particles to be atomized, improve the vaporization performance, and perform high-flow processing.

[0101] As described above, the present invention has been described with reference to the embodiments shown in the drawings, but this is only an illustration, and it should be understood that various modifications and equivalent other embodiments can be made according to the common knowledge in the technical field. Therefore, the true technical protection scope of the present invention should be based on the appended claims and be defined according to the specific content of the above invention.

[0102] Industrial Applicability

[0103] The present invention relates to a vaporization device for semiconductor processes, and can be used in all industrial fields that require the vaporization of various liquid substances.

Claims

1. A vaporization device for semiconductor process, characterized in that: include: A first atomization section, which utilizes ultrasonic waves to vibrate a liquid source for the first atomization; A second atomizing section is connected to the first atomizing section and discharges the primary atomized particles flowing from the first atomizing section to a discharge port (orifice plate) by carrier gas pressure to perform a second atomization; and The vaporization part is connected to the second atomization part, and the secondary atomization particles flowing in from the second atomization part pass through the vaporization part and are vaporized.

2. The semiconductor process vaporization device according to claim 1, characterized in that: A first atomizing space is formed inside the first atomizing portion so that the liquid source flows in. The first atomizing space has an ultrasonic vibrator. The ultrasonic vibrator is connected to an ultrasonic controller that supplies high-frequency power.

3. The semiconductor process evaporation device according to claim 2, characterized in that: The ultrasonic controller has a high-frequency power oscillation function and can adjust the power of the supplied power to adjust the frequency of the ultrasonic wave generated by the ultrasonic vibrator.

4. The semiconductor process vaporization device according to claim 3, characterized in that: The ultrasonic controller has a frequency scanning function for finding the best vibration frequency according to the flow pattern and flow rate of the liquid source, and adjusts the power of the supplied electricity to generate ultrasonic waves at the best vibration frequency.

5. The semiconductor process vaporization device according to claim 1, characterized in that: The second atomization unit comprises: A mixing space for mixing the primary atomized particles flowing in from the first atomizing section and the carrier gas flowing in from the outside; The discharge port is formed at one end of the mixing space; and The second atomization space is formed at the other side of the discharge port.

6. The semiconductor process vaporization device according to claim 5, characterized in that: The second atomizing section is formed with a tangential flow path penetrating the second atomizing section in a tangential direction of the mixing space, and the tangential flow path is connected to the carrier gas inlet pipe.

7. The semiconductor process vaporization device according to claim 1, characterized in that: The vaporization portion is in the shape of a circular tube, and a cylindrical flow path structure having the same diameter as the inner diameter of the vaporization portion is inserted into the inside.

8. The semiconductor process vaporization device according to claim 7, characterized in that: An external heater is provided on the outer side of the vaporization portion, and an internal heater is provided on the inner side of the vaporization portion.

9. The semiconductor process vaporization device according to claim 8, characterized in that: The internal heater is inserted into the flow path structure.

10. The semiconductor process vaporization device according to claim 8, characterized in that: A spiral flow path is formed on the outer peripheral surface of the flow path structure.

11. The semiconductor process vaporization device according to claim 8, characterized in that: A disc-shaped flange is formed at the lower end of the flow path structure. A plurality of inflow holes are formed in the upper portion of the flange in the radial direction. The plurality of inflow holes are connected to a discharge hole formed through the center of the flange.

12. The semiconductor process vaporization device according to claim 11, characterized in that: The vaporization portion is combined with the end plate, and a source gas exhaust pipe connected to the exhaust hole is formed at the center of the end plate.

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