Wafer double-sided thinning device and method

By designing hole-punching and thinning grinding wheels in the wafer double-sided thinning device, and combining the air supply assembly and material extraction assembly, uniform air flow overhang and vacuum adsorption are adopted to solve the impurity damage problem during wafer material removal, achieving higher quality wafer thinning.

CN120023711AActive Publication Date: 2025-05-23ZHEJIANG QIUSHI SEMICON EQUIP CO LTD +1
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Patent Information

Application Number
CN202510496819.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-04-18
Publication Date
2025-05-23
Estimated Expiration
2045-04-18

AI Technical Summary

Technical Problem

When thinning the finished product, the wafer is easily damaged by residual impurities, resulting in poor local parameters and surface quality.

Method used

A double-sided thinning device for wafers is designed. By setting holes on the first and second plates and installing thinning grinding wheels, combining the air supply assembly and the material extraction assembly, a uniform air flow top push and vacuum adsorption method is adopted to replace the traditional vacuum adsorption method, reducing damage caused by uneven force.

Benefits of technology

It effectively reduces the damage rate during wafer material removal, ensures uniform stress and surface cleaning of the processed workpiece, and improves the thinned wafer quality.

✦ Generated by Eureka AI based on patent content.

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    Figure CN120023711A_ABST
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Abstract

The invention provides a wafer double-sided thinning device and method, belongs to the technical field of wafer processing, and solves the problem that thinned finished products are easily damaged by residual impurities during taking in the prior art. The wafer double-face thinning device comprises a bearing part, a first plate body, a second plate body, a thinning assembly, an air supply assembly and a material taking assembly, the bearing part is used for radially supporting the peripheral side of a machined workpiece, the first plate body is arranged on the first side of the bearing part, a first digging hole is formed in the first plate body, the second plate body is arranged on the second side of the bearing part, and the second digging hole is formed in the second plate body. A first digging hole is formed in the first plate body, a second digging hole is formed in the second plate body, the gas supply assembly comprises gas conveying pipes and gas conveying pieces, the gas conveying pipes are at least arranged on the first plate body, the gas conveying pipes face the second plate body, the material taking assembly comprises a vacuum adsorption piece and a flow direction adjusting piece, the vacuum adsorption piece adsorbs a machined workpiece, and the flow direction adjusting piece can adjust the flow direction of gas output by the gas conveying pieces. According to the invention, the wafer and the first plate body can be cleaned during material taking, and partial bending of the wafer and abrasion of silicon powder are avoided.
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Claims

1. A wafer double-sided thinning device, characterized in that: include: A carrier (100), the carrier (100) being used to support a workpiece for processing; A first plate body (200), the first plate body (200) being arranged on a first side of the carrier (100); a second plate body (300), the second plate body (300) being arranged on a second side of the carrier (100); An air supply assembly (500), the air supply assembly (500) comprising: an air delivery pipe (510), the air delivery pipe (510) being multiple and at least arranged on the first plate body (200), the air delivery pipe (510) facing the second plate body (300); a gas delivery member (520), the gas delivery member (520) being in communication with the gas delivery pipe (510) and being used for delivering gas; and A material taking component (600), wherein the material taking component (600) comprises: A vacuum suction piece (610), the vacuum suction piece (610) having at least the freedom of movement between the first plate body (200) and the second plate body (300), a side of the vacuum suction piece (610) facing away from the second plate body (300) being connected to an air suction passage (631), the air suction passage (631) being used to suction air so that the vacuum suction piece (610) can adsorb a workpiece for processing; A flow direction adjusting member (620), wherein the flow direction adjusting member (620) comprises: a first elastic member (621), wherein the first elastic member (621) is disposed in the air exhaust passage (631) and can be deformed toward the direction where the second plate (300) is located under the air exhaust action of the air exhaust passage (631); A second elastic member (622), the second elastic member (622) is arranged on the first elastic member (621) and away from the second plate body (300), the second elastic member (622) has a first state of being deformed and bent toward the first plate body (200) and a second state of being deformed and bent toward the second plate body (300), the second elastic member (622) can switch between the first state and the second state as the first elastic member (621) is deformed to adjust the flow direction of the gas output by the gas delivery member (520).

2. The wafer double-sided thinning device according to claim 1, characterized in that: The elastic modulus of the first elastic member (621) is greater than the elastic modulus of the second elastic member (622); In the first state, the second elastic member (622) and the portion facing the first plate body (200) are deformed to form a raised positive flow guide portion (622a), and the edge of the positive flow guide portion (622a) extends in the direction of the second plate body (300); In the second state, the second elastic member (622) and the portion facing the first plate body (200) are deformed to form a concave reverse flow guide portion (622b), and the edge of the reverse flow guide portion (622b) extends in the direction of the first plate body (200).

3. The wafer double-sided thinning device according to claim 1, characterized in that: The material picking assembly (600) also includes a material picking rack (630), and the vacuum adsorption component (610) is provided on the side of the material picking rack (630) close to the second plate body (300), and the exhaust air duct (631) is formed in the material picking rack (630). The material picking rack (630) is provided with an exhaust component (632), and the exhaust component (632) is communicated with the exhaust air duct (631).

4. The wafer double-sided thinning device according to claim 3, characterized in that: The material taking frame (630) is provided with a second elastic member (622), and the second elastic member (622) comprises: a fixing portion (6221), the fixing portion (6221) being located at an outer edge of the second elastic member (622); The elastic portion (6222) is circumferentially surrounded by the fixed portion (6221), and the elastic modulus of the fixed portion (6221) is much greater than the elastic modulus of the elastic portion (6222).

5. The wafer double-sided thinning device according to claim 3, characterized in that: The material taking frame (630) is provided with an annular support portion (633), and the second elastic member (622) is arranged on the annular support portion (633). A closed cavity (634) is formed between the annular support portion (633), the second elastic member (622) and the first elastic member (621).

6. The wafer double-sided thinning device according to claim 1, characterized in that: The surface of the first plate body (200) facing the second plate body (300) comprises: A first area (220), the first area (220) is used to face the second elastic member (622); a second zone (230), the second zone (230) circumferentially surrounding the first zone (220); The distribution density of the gas delivery pipes (510) in the first zone (220) is greater than the distribution density of the gas delivery pipes (510) in the second zone (230).

7. The wafer double-sided thinning device according to claim 1, characterized in that: A driving mechanism (700) is provided on the outside of the first plate body (200), and the driving mechanism (700) acts on the first plate body (200) to drive the first plate body (200) to move. An air pressure sensor (635) is provided in the air exhaust passage (631), and the air pressure sensor (635) is respectively connected to the driving mechanism (700) and the air transmission component (520) for communication.

8. The wafer double-sided thinning device according to claim 1, characterized in that: The width of the material taking rack (630) is less than one fifth of the diameter of the second plate body (300), and the thickness of the material taking rack (630) is less than one quarter of the thickness of the second plate body (300).

9. A wafer double-sided thinning method, applied to the wafer double-sided thinning device according to any one of claims 1 to 8, characterized in that: The following steps are involved: Obtaining completion instructions for thinning of the workpiece; Based on the completion instruction, the gas delivery component (520) is started to deliver gas to push the workpiece to abut against the second plate body (300), and the first plate body (200) is controlled to move in a direction away from the workpiece; The vacuum suction member (610) is driven to move to abut against the workpiece to perform a vacuum operation on the vacuum flow channel (631); The air exhaust passage (631) is controlled to switch the second elastic member (622) from the second state to the first state.

10. The wafer double-sided thinning method according to claim 9, characterized in that: The following steps are also included: Acquiring image information of a surface of the first plate body (200) close to the second plate body (300); Based on the image information, the distance between the first plate (200) and the second elastic member (622) and / or the deformation state of the second elastic member (622) are controlled.

Citation Information

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