Crystal Orientation Machining Method and Device

Abstract

This application relates to a crystal orientation processing method and apparatus. The crystal orientation processing method includes: controlling a moving platform on which a crystal to be processed is placed to drive the crystal to be processed to rotate to a target pose; at the target pose, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted by an X-ray diffractometer; using a cutter to perform orientation cutting on the crystal to be processed at the target pose according to the first target crystal plane to obtain an orientation cutting crystal plane; searching for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the orientation cutting crystal plane; determining a target calibration crystal direction according to the common edge between the searched second target crystal plane and the orientation cutting crystal plane, and using the cutter to perform orientation cutting on the crystal to be processed according to the determined target calibration crystal direction to obtain a target processed crystal. Through this application, the problems of long processing time and low accuracy in crystal processing are solved.

Description

Technical Field

[0001] This application relates to the technical field of crystal orientation, and particularly relates to a crystal orientation processing method and apparatus. Background Art

[0002] Anisotropy is an inherent property of crystals, manifested as differences in physical properties such as optical, electrical, and mechanical properties of crystals in different directions. Therefore, when processing crystals, the influence of crystal orientation needs to be considered, and the crystals are cut in a specific direction.

[0003] In related technologies, the crystal orientation is usually accurately calibrated by the Laue method or an orientation instrument, and then the crystal is processed using an independent laser cutting device. However, in the above methods, after the crystal orientation is completed, the crystal needs to be re-fixed to the cutting device, resulting in cumbersome operations and long processing times, making it difficult to achieve full-process automation; and errors may accumulate due to reinstallation during the transfer of the crystal from the orientation instrument to the cutting device, affecting the accuracy of the final processing.

[0004] Currently, no effective solution has been proposed for the problems of long processing time and low accuracy in crystal processing in related technologies. Summary of the Invention

[0005] Embodiments of this application provide a crystal orientation processing method and apparatus to at least solve the problems of long processing time and low accuracy in crystal processing in related technologies.

[0006] In a first aspect, embodiments of this application provide a crystal orientation processing method for a crystal orientation processing apparatus including an X-ray diffractometer, a cutter, and a moving platform; the method includes:

[0007] Controlling the moving platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to a target pose; wherein, in the target pose, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted by the X-ray diffractometer;

[0008] Using the cutter to perform orientation cutting on the crystal to be processed in the target pose according to the first target crystal plane to obtain an orientation cutting crystal plane;

[0009] Searching for a second target crystal plane in the crystal to be processed that intersects with the orientation cutting crystal plane;

[0010] Determining a target calibration crystal direction according to the common edge between the searched second target crystal plane and the orientation cutting crystal plane, and using the cutter to perform orientation cutting on the crystal to be processed according to the determined target calibration crystal direction to obtain a target processed crystal.

[0011] In some of these embodiments, the motion platform that controls the placement of the crystal to be processed drives the crystal to be processed to rotate to the target pose, including:

[0012] Controlling the X-ray diffractometer to scan the crystal to be processed driven by the motion platform at a preset first diffraction peak position; the first diffraction peak position is the diffraction peak position corresponding to the first target crystal plane;

[0013] During the scanning process, when a first detection signal for the crystal to be processed is detected, in response to the first detection signal, controlling the motion platform to stop rotating and controlling the X-ray diffractometer to stop scanning; the pose of the crystal to be processed when the motion platform stops rotating is the target pose.

[0014] In some of these embodiments, the method further includes:

[0015] Obtaining a preset crystal plane database;

[0016] Retrieving from the crystal plane database the crystal plane that matches the orientation cutting crystal plane to be cut;

[0017] When the crystal plane that matches the orientation cutting crystal plane to be cut is retrieved, determining the retrieved crystal plane that matches the orientation cutting crystal plane to be cut as the preset reference plane;

[0018] When the retrieval of the crystal plane that matches the orientation cutting crystal plane to be cut fails, retrieving from the crystal plane database the crystal plane equivalent to the orientation cutting crystal plane to be cut, and determining the preset reference plane based on the retrieved crystal plane equivalent to the orientation cutting crystal plane to be cut;

[0019] Determining the first diffraction peak position according to the preset reference plane.

[0020] In some of these embodiments, using the cutter to perform orientation cutting on the crystal to be processed in the target pose according to the first target crystal plane to obtain an orientation cutting crystal plane, including:

[0021] Controlling the cutter to perform vertical orientation cutting on the crystal to be processed according to the first target crystal plane during the process of the motion platform moving in the first horizontal direction to obtain the orientation cutting crystal plane; wherein, the first horizontal direction is perpendicular to the first target crystal plane.

[0022] In some of these embodiments, the method further includes:

[0023] When controlling the cutter to perform directional cutting in the vertical direction on the first surface of the crystal to be processed to obtain a first directionally cut crystal plane, control the moving platform to move to a specified position along a second horizontal direction. Under the specified position, again control the cutter to perform directional cutting in the vertical direction on the crystal to be processed according to the first target crystal plane during the movement of the moving platform along the first horizontal direction to obtain a second directionally cut crystal plane; wherein, the second horizontal direction is perpendicular to the first horizontal direction.

[0024] In some embodiments, the emitted beam of the cutter has a taper; the method further includes:

[0025] According to the taper of the emitted beam of the cutter, correct the tilt angle of the moving platform;

[0026] Control the moving platform to tilt based on the tilt angle, and the cutter performs directional cutting on the crystal to be processed to obtain the directionally cut crystal plane.

[0027] In some embodiments, the determining the second target crystal plane intersecting the directionally cut crystal plane inside the crystal to be processed includes:

[0028] Control the X-ray diffractometer to scan the crystal to be processed driven by the moving platform under a preset second diffraction peak position; the second diffraction peak position is the diffraction peak position corresponding to the second target crystal plane;

[0029] During the scanning process, when a second detection signal for the crystal to be processed is detected, in response to the second detection signal, control the moving platform to stop rotating and control the X-ray diffractometer to stop scanning, and determine the second target crystal plane of the crystal to be processed in the pose when the moving platform stops rotating.

[0030] In some embodiments, the controlling the X-ray diffractometer to scan the crystal to be processed driven by the moving platform under a preset second diffraction peak position includes:

[0031] According to the second target crystal plane to be searched, determine a preset tilt angle for the rotation of the moving platform around a first tilt axis;

[0032] Control the moving platform to be fixed at the preset tilt angle, drive the crystal to be processed to rotate around a second tilt axis, and control the X-ray diffractometer to scan the crystal to be processed driven by the moving platform under the second diffraction peak position.

[0033] Second aspect, embodiments of the present application provide a crystal orientation processing device, the device comprising: an X-ray diffractometer, a cutter, a motion platform, and a controller;

[0034] The controller is respectively connected to the X-ray diffractometer, the cutter, and the motion platform, and is configured to execute the crystal orientation processing method as described in the first aspect above.

[0035] In some embodiments, the device further comprises a housing;

[0036] The motion platform includes a rotation mechanism and a carrier; wherein, the rotation mechanism is configured to rotate about a first tilt axis and about a second tilt axis; the crystal to be processed is placed on the rotation mechanism;

[0037] The carrier is installed at the bottom inside the housing and moves along a first horizontal direction and a second horizontal direction; wherein, the first horizontal direction and the second horizontal direction are perpendicular to each other; the X-ray diffractometer and the rotation mechanism are mounted on the carrier;

[0038] The cutter is fixed at the top inside the housing.

[0039] Compared with the related art, the crystal orientation processing method and device provided by the embodiments of the present application drive the crystal to be processed to rotate to a target pose by controlling the motion platform on which the crystal to be processed is placed; wherein, at the target pose, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted by the X-ray diffractometer; the cutter is used to perform orientation cutting on the crystal to be processed at the target pose according to the first target crystal plane to obtain an orientation cutting crystal plane; search for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the orientation cutting crystal plane; according to the common edge between the searched second target crystal plane and the orientation cutting crystal plane, determine the target calibration crystal direction, and use the cutter to continue to perform orientation cutting on the crystal to be processed according to the determined target calibration crystal direction to obtain the target processed crystal.

[0040] Based on this, by controlling the motion platform, the all-round adjustment of the crystal to be processed in three-dimensional space is realized, and the target crystal plane is quickly and accurately found by using the Bragg condition; at the same time, an automatic control software is adopted to optimize the cutting path and angle of the cutter relative to the crystal to be processed according to the real-time detection data of the X-ray diffractometer, so that the entire orientation and cutting process is standardized and automated, and batch operation is recognized, thereby realizing an integrated processing method for crystal orientation and cutting, effectively improving the accuracy and efficiency of crystal processing, and solving the problems of long processing time and low accuracy in crystal processing in the related art.

[0041] Details of one or more embodiments of the present application are set forth in the following drawings and description to make other features, objects, and advantages of the present application more concise and understandable. Description of the Drawings

[0042] The drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0043] Figure 1 is a hardware structure block diagram of a terminal of a crystal orientation processing method according to an embodiment of the present application;

[0044] Figure 2 is a schematic diagram of a crystal orientation processing apparatus according to an embodiment of the present application;

[0045] Figure 3 is a flowchart of a crystal orientation processing method according to an embodiment of the present application;

[0046] Figure 4 is a flowchart of a method for directionally cutting a diamond surface according to an embodiment of the present application;

[0047] Figure 5 is a flowchart of a method for marking the crystal orientation of a diamond seed crystal according to an embodiment of the present application;

[0048] Figure 6 is a structure block diagram of a crystal orientation processing apparatus according to an embodiment of the present application. Detailed Embodiments

[0049] In order to make the objectives, technical solutions, and advantages of the present application clearer and more understandable, the present application will be described and explained below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments provided in the present application without creative efforts belong to the scope of protection of the present application. In addition, it can also be understood that although the efforts made in this development process may be complex and lengthy, for those of ordinary skill in the art related to the content disclosed in the present application, some design, manufacturing, or production changes based on the technical content disclosed in the present application are only conventional technical means and should not be understood as insufficient disclosure of the present application.

[0050] References to "embodiments" in this application mean that the specific features, structures, or characteristics described in connection with the embodiments can be included in at least one embodiment of this application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment each time, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those of ordinary skill in the art will explicitly and implicitly understand that the embodiments described in this application can be combined with other embodiments without conflict.

[0051] Unless otherwise defined, the technical terms or scientific terms involved in this application should have the ordinary meaning understood by those of ordinary skill in the technical field to which this application belongs. The words "a", "an", "one kind", "the", and the like involved in this application do not indicate a quantity limitation and can represent a singular or plural number. The terms "include", "comprise", "have" and any variations thereof involved in this application are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may further include steps or units not listed, or may further include other steps or units inherent to these processes, methods, products, or devices. The terms "connected", "coupled" and the like involved in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The term "plurality" involved in this application means greater than or equal to two. The terms "first", "second", "third", etc. involved in this application are only used to distinguish similar objects and do not represent a specific order for the objects.

[0052] The method embodiments provided in this embodiment can be executed on a terminal, a computer, or a similar computing device. Taking running on a terminal as an example, Figure 1 is a hardware structure block diagram of a terminal for a crystal orientation processing method according to an embodiment of this application. As Figure 1 shown, the terminal may include one or more ( Figure 1 only one is shown in the figure) processors 102 (the processors 102 may include, but are not limited to, processing devices such as a microprocessor MCU or a field programmable gate array FPGA) and a memory 104 for storing data. Optionally, the above terminal may further include a transmission device 106 for communication functions and an input / output device 108. Those of ordinary skill in the art can understand that Figure 1 the structure shown is only schematic and does not limit the structure of the above terminal. For example, the terminal may further include more or fewer components than those shown in Figure 1 the figure, or have a different configuration from that shown in Figure 1 the figure.

[0053] The memory 104 can be used to store computer programs, such as software programs and modules of application software, such as the computer program corresponding to the crystal orientation processing method in the embodiments of the present application. The processor 102 executes various functional applications and data processing by running the computer programs stored in the memory 104, that is, implements the above-mentioned method. The memory 104 may include a high-speed random access memory, and may further include a non-volatile memory, such as one or more magnetic storage devices, flash memories, or other non-volatile solid-state memories. In some instances, the memory 104 may further include a memory remotely disposed relative to the processor 102, and these remote memories can be connected to the terminal through a network. Examples of the above network include but are not limited to the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0054] The transmission device 106 is used to receive or send data via a network. Specific examples of the above network may include a wireless network provided by a communication provider of the terminal. In one instance, the transmission device 106 includes a network adapter (abbreviated as NIC for Network Interface Controller), which can be connected to other network devices through a base station and thus communicate with the Internet. In one instance, the transmission device 106 may be a radio frequency (abbreviated as RF) module, which is used to communicate with the Internet wirelessly.

[0055] As described in the background art, when processing semiconductor crystal raw materials into devices in the prior art, crystal orientation is required. Usually, the light image method, the conoscopic method, the Laue method or an orientation instrument is used for crystal orientation calibration. Among them, the light image method and the conoscopic method have very limited applications and poor accuracy, and it is impossible to perform directional cutting of arbitrary crystal planes. When using the Laue method or an orientation instrument for precise crystal orientation calibration, there are the following deficiencies: (1) Low efficiency of distributed operations; in the prior art, after crystal orientation is completed, the crystal needs to be fixed to the cutting device again, resulting in cumbersome operations and long time consumption; (2) Accuracy loss; during the transfer of the crystal from the orientation instrument to the cutting device, errors may accumulate due to reinstallation, affecting the accuracy of the final processing; (3) Low degree of automation; the prior art relies on manual adjustment and data recording, and it is difficult to achieve full-process automation.

[0056] Based on the above problems, this embodiment provides a crystal orientation processing method for a crystal orientation processing device including an X-ray diffractometer, a cutter, and a moving platform. Please refer to Figure 2, the rotating mechanism 24 in the motion platform can rotate about the first tilt axis and the second tilt axis. Among them, the first tilt axis refers to the axis perpendicular to the sample surface. When the rotating mechanism 24 rotates about the first tilt axis, it can drive the sample placed on the rotating mechanism 24 to rotate about the axis in the vertical direction. The tilt angle of rotation in the figure is represented by the χ angle; the second tilt axis refers to the axis in the crystal sample. When the rotating mechanism 24 rotates about the second tilt axis, it can drive the crystal sample placed on the rotating mechanism 24 to rotate about the axis in the horizontal direction. The tilt angle of rotation in the figure is represented by the φ angle. It should be understood that the rotating mechanism 24 can rotate about the second tilt axis at a fixed first tilt angle of rotation about the first tilt axis; vice versa; or it can perform arbitrary rotation actions about the first tilt axis and the second tilt axis simultaneously. In this way, a rotation control method that can flexibly change the crystal orientation in three-dimensional space is realized.

[0057] Figure 3 is a flowchart of a crystal orientation processing method according to an embodiment of the present application, as Figure 3 shown, this process includes the following steps:

[0058] Step S310, control the motion platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to the target pose; among them, at the target pose, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted by an X-ray diffractometer.

[0059] Specifically, during the search for a specific crystal plane, turn on the X-ray diffractometer and control the rotation of the motion platform; this motion platform can accurately adjust the position and angle of the crystal to be processed placed thereon. The X-ray diffractometer includes an X-ray emitter and a detector, where the X-ray emitter and the detector are respectively installed on opposite sides of the motion platform. The X-ray generator continuously emits X-rays to the continuously rotating crystal to be processed; when the X-rays irradiate the crystal, they will be scattered by the atoms or molecules in the crystal. When the Bragg's law is satisfied, that is, when the path difference between the incident wave and the reflected wave is an integer multiple of the wavelength, these waves will reinforce each other and generate a strong diffraction signal. At this time, the diffraction signal can be detected by the detector, and thus the first target crystal plane that satisfies the Bragg condition at the current rotated pose is determined.

[0060] Step S320, use a cutter to perform orientation cutting on the crystal to be processed at the target pose according to the first target crystal plane to obtain an orientation cutting crystal plane.

[0061] Once the first target crystal plane that satisfies the Bragg condition is determined, a cutter can be used to perform in-situ cutting on the crystal to be processed. Since the moving platform drives the first target crystal plane to rotate during the process of finding the first target crystal plane through the above step S310, so that the crystal moves to the target pose when the first target crystal plane is detected. In this target pose, Bragg is just the vertical plane. At this time, only need to turn on the cutter to perform vertical cutting on the crystal to be processed, and the oriented cutting plane can be cut out from the crystal surface, thus realizing the optimization of the cutting path and angle.

[0062] It should also be noted that the above cutter can be a laser cutting device or a wire cutting device. For example, for crystals with high hardness or small size, a laser cutting device can be used to cut them; while for crystals with low hardness or large size, the wire cutting device can be replaced to cut them.

[0063] Step S330, search for the second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the oriented cutting plane.

[0064] After the oriented cutting plane on the crystal surface is automatically scanned, detected and cut out by the crystal orientation processing device, crystal orientation calibration is performed on the crystal with the current surface oriented and the side orientation unknown. Since the crystal orientation cannot be detected by the X-ray diffractometer, in this embodiment, it is necessary to determine it by means of the second target crystal plane that intersects with the oriented cutting plane in the crystal and has a common edge. Among them, this common edge is the crystal orientation to be calibrated (i.e., the target calibration crystal orientation).

[0065] Specifically, similar to the process of finding the first target crystal plane in the above step S310, in this step, the moving platform can also be controlled to drive the crystal to be processed to rotate, and the X-ray diffractometer scans the continuously rotating crystal to be processed until a signal is detected. At this time, the second target crystal plane to be searched is determined. It should be understood that the crystal planes found in step S330 and step S310 are different because the X-ray diffractometer scans and detects the crystal at different scanning angles; for example, when the X-ray diffractometer is fixed at the scanning angle corresponding to the first target crystal plane, the first target crystal plane is detected; when the X-ray diffractometer is fixed at the scanning angle corresponding to the second target crystal plane, the second target crystal plane is detected.

[0066] Step S340, determine the target calibration crystal orientation according to the common edge between the searched second target crystal plane and the oriented cutting plane, and use the cutter to continue to perform oriented cutting on the crystal to be processed according to the determined target calibration crystal orientation to obtain the target processed crystal.

[0067] After cutting is completed, a target processed crystal with a specific crystal orientation and shape will be obtained; this target processed crystal can be used for subsequent experiments, production, or applications. It should also be understood that during the above crystal processing process, the user only needs to input the crystal planes to be searched for and cut, as well as the placement of the crystal, and the crystal orientation processing device can adaptively complete the crystal plane search and cutting of the crystal to be processed, realizing an integrated processing process for cutting specific crystal planes and crystal orientations of the crystal.

[0068] In the above crystal orientation processing method, the movement platform is controlled to achieve the full - range adjustment of the crystal to be processed in three - dimensional space, and the Bragg condition is used to quickly and accurately find the target crystal plane; at the same time, an automated control software is adopted to optimize the cutting path and angle of the cutter relative to the crystal to be processed according to the real - time detection data of the X - ray diffractometer, making the entire orientation and cutting process standardized and automated. Thus, an integrated processing method for crystal orientation and cutting is realized, without the need to refix the crystal to the cutting device after crystal orientation is completed, and the accuracy loss that may be caused by reinstallation during the transfer of the crystal from the orientator to the cutting device is avoided, effectively improving the accuracy and efficiency of crystal processing, and solving the problems of long processing time and low accuracy in crystal processing in related technologies.

[0069] In some of the embodiments, controlling the movement platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to the target pose further includes the following steps:

[0070] Controlling the X - ray diffractometer to scan the crystal to be processed driven by the movement platform at a preset first diffraction peak position; the first diffraction peak position is the diffraction peak position corresponding to the first target crystal plane; during the scanning process, when a first detection signal for the crystal to be processed is detected, in response to the first detection signal, controlling the movement platform to stop rotating and controlling the X - ray diffractometer to stop scanning; the pose of the crystal to be processed when the movement platform stops rotating is the target pose.

[0071] The above - mentioned first diffraction peak position refers to the angular deflection position of the X - ray diffractometer relative to the crystal to be processed where the first target crystal plane in the crystal to be processed can be detected. Taking Figure 2 as an example, the movement platform includes a bearing table 23, and the X - ray generator 21 and the detector 22 in the X - ray diffractometer are respectively mounted on opposite sides of the bearing table 23. The angle of horizontal rotation of the X - ray generator 21 around the center point of the bearing table 23 is the ω angle, and the angle of horizontal rotation of the detector 22 around the center point of the bearing table 23 is the 2θ angle. At this time, if it is necessary to detect the (004) crystal plane, the deflection angle ω of the X - ray generator 21 needs to be fixed at 59.76°, and the deflection angle 2θ of the detector 22 needs to be fixed at 119.52°; where 2θ = 119.52° and ω = 59.76° are the above - determined first diffraction peak positions.

[0072] Next, control the X-ray detector to start scanning the crystal to be processed at a preset first diffraction peak position. During the scanning process, the X-ray passes through the crystal and diffracts, and the diffraction signal is captured by the detector and converted into an electrical signal. During the scanning process, the detector detects and records the diffraction signal in real time. When a signal matching the first diffraction peak position is detected, it is considered that the diffraction peak corresponding to the first target crystal plane has been found. At this time, a first detection signal is generated as a response, controlling the moving platform to immediately stop rotating and simultaneously controlling the X-ray diffractometer to stop scanning; this is to ensure that after finding the accurate position of the first target crystal plane, the current pose of the crystal can be maintained unchanged. Therefore, when the moving platform stops rotating, the pose of the crystal to be processed is the target pose. This target pose is the key position that needs to be maintained during the subsequent cutting process.

[0073] After determining the target pose, a cutter can be used to cut the crystal along a specific direction to obtain a processed crystal with the required crystal plane cut on its surface. In this embodiment, the X-ray diffractometer is placed horizontally. When the X-ray emitted by the X-ray diffractometer is incident on the crystal at a specific angle, a reflection plane, that is, the Bragg plane, is formed by reflection on the first target crystal plane; this Bragg plane is a vertical plane. Based on this, when the moving platform stops rotating, for the crystal to be processed in the target pose, only need to control the cutter to open and perform in-situ cutting in the vertical direction on the surface of the crystal to be processed, which is simple to operate.

[0074] Through the above embodiments, by using the method combining the X-ray diffractometer and the moving platform, the target pose of the crystal to be processed can be accurately located; this process requires precise control and real-time detection feedback to ensure that the target pose of the crystal can be accurately found and maintained, thereby optimizing the cutting path.

[0075] In some of these embodiments, the above crystal orientation processing method may further include the following steps:

[0076] Obtain a preset crystal plane database; retrieve from the crystal plane database the crystal plane that matches the oriented cutting crystal plane to be cut; in the case where a crystal plane that matches the oriented cutting crystal plane to be cut is retrieved, determine the retrieved crystal plane that matches the oriented cutting crystal plane to be cut as the preset reference plane; in the case where the retrieval of the crystal plane that matches the oriented cutting crystal plane to be cut fails, retrieve from the crystal plane database the crystal plane equivalent to the oriented cutting crystal plane to be cut, and determine the preset reference plane based on the retrieved crystal plane equivalent to the oriented cutting crystal plane to be cut; according to the preset reference plane, determine the first diffraction peak position.

[0077] The above crystal plane database is used to store crystal plane data that can observe diffraction behavior satisfying Bragg's condition, including crystal planes and diffraction data matching the crystal planes, etc. If the oriented cutting crystal plane to be queried cannot be retrieved from the crystal plane database, it indicates that the current oriented cutting crystal plane to be cut belongs to an extinction plane or a high-index diffraction plane. For high-index diffraction crystal planes, additional complex mathematical calculations and manual adjustments are required for cutting, resulting in poor practicality. If the oriented cutting crystal plane is an extinction crystal plane, it is difficult to observe diffraction behavior satisfying Bragg's condition, thereby affecting crystal orientation and cutting.

[0078] To improve the above problems, when the oriented cutting crystal plane to be cut cannot be retrieved from the crystal plane database, that is, it indicates that the oriented cutting crystal plane to be cut is an extinction plane or a high-index crystal plane. At this time, a preset reference plane equivalent to the oriented cutting crystal plane can be retrieved and determined from the crystal plane database. For example, if the (001) crystal plane of a diamond crystal is an extinction plane, then during actual processing, the (004) crystal plane equivalent to this crystal plane searched from the database can be input into the program, the (004) crystal plane can be determined as the preset reference plane, and the position of the first diffraction peak that can detect this preset reference plane can be determined, so that the above crystal orientation processing device can respond to the input (004) crystal plane and execute the subsequent integrated orientation and cutting process using the steps described in any of the above embodiments.

[0079] In addition, if the software or tool can retrieve a crystal plane in the crystal plane database that matches the oriented cutting crystal plane to be cut, then the processing process is relatively simple: the retrieved matching crystal plane can be directly determined as the preset reference plane. In this case, since a crystal plane to be cut that can observe diffraction behavior satisfying Bragg's condition has been found, there is no need to further search for an equivalent crystal plane or perform other complex analyses.

[0080] Through the above embodiments, precise cutting can be achieved for any high-index crystal plane or extinction plane, effectively expanding the applicable range of crystal processing.

[0081] On the other hand, please refer to Figure 2 , the rotation mechanism of the moving platform can rotate around a first tilt axis perpendicular to the surface of the sample, and the rotation angle range is 0° to 89°; based on this consideration, when determining the preset reference plane, the angle between the preset reference plane and the surface of the crystal to be processed can also be combined to determine the preset reference plane; specifically, obtain a recommended reference plane equivalent to the oriented cutting crystal plane from the crystal plane database; calculate the angle between the recommended reference plane and the surface of the crystal to be processed, and screen out the reference planes with angles within the preset angle range (such as 0° to 89°) as the above preset reference planes. Considering the angle can effectively avoid the problem that the crystal plane to be searched exceeds the rotation range of the moving platform, resulting in the crystal plane not being observable, and further improve the reliability of the crystal orientation processing method.

[0082] In some of these embodiments, the above-mentioned use of a cutter to perform directional cutting on a crystal to be processed in a target pose according to a first target crystal plane to obtain a directionally cut crystal plane may further include the following steps:

[0083] Control the cutter to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the moving platform along the first horizontal direction, so as to obtain a directionally cut crystal plane; wherein, the first horizontal direction is a horizontal direction perpendicular to the first target crystal plane.

[0084] More specifically, in the above-mentioned crystal directional processing device, the moving platform further includes a carrying platform; please refer to Figure 2 , the carrying platform 23 can move along the first horizontal direction (X-axis) and the second horizontal direction (Y-axis), so that the entire moving platform drives the crystal to be processed placed thereon to move in these two directions on the horizontal plane. Then, during the directional cutting of the crystal to be processed, the position of the cutter 25 can be kept fixed, and the carrying platform 23 drives the crystal to be processed to move along the X-axis. During this process, the cutter 25 emits a laser beam in the vertical direction at its fixed position to the crystal to be processed, thereby realizing the vertical directional cutting of the crystal to be processed.

[0085] In some of these embodiments, the above-mentioned crystal directional processing method further includes the following steps:

[0086] In the case of controlling the cutter to perform vertical directional cutting on the first surface of the crystal to be processed to obtain a first directionally cut crystal plane, control the moving platform to move along the second horizontal direction to a specified position. At the specified position, again control the cutter to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the moving platform along the first horizontal direction, so as to obtain a second directionally cut crystal plane; wherein, the second horizontal direction is a horizontal direction perpendicular to the first horizontal direction.

[0087] Wherein, after a directionally cut crystal plane is cut out on one surface of the crystal to be processed, control the carrying platform in the moving platform to drive the crystal to be processed to move along the second horizontal direction (Y-axis) so that the other surface of the crystal to be processed is aligned with the cutter, and then control the carrying platform to drive the crystal to be processed to move along the X-axis, and at the same time turn on the cutter to perform in-situ cutting on the crystal to be processed moving along the X-axis.

[0088] Through the above embodiments, a software-controlled four-axis moving platform is provided, thereby realizing the omnidirectional adjustment of the crystal to be processed in three-dimensional space and making the operation process of crystal cutting and processing more convenient.

[0089] In some of these embodiments, the emitted beam of the above-mentioned cutter has a taper; the above-mentioned crystal directional processing method further includes:

[0090] According to the taper of the emitted light beam of the cutter, correct the tilt angle of the moving platform; control the moving platform to tilt based on this tilt angle, and use the cutter to perform directional cutting on the crystal to be processed to obtain a directionally cut crystal plane.

[0091] When a laser cutter is used, the laser beam emitted by the cutter has a certain taper, which will cause the surface of the crystal to be processed to have a certain inclination accordingly, resulting in the deviation of the cut crystal plane. Therefore, in this embodiment, the tilt angle required for the current moving platform can be determined according to the taper data of the laser emission beam itself, and the moving platform is controlled to continue to perform a small amount of rotational movement along the first tilt axis according to this tilt angle, so as to achieve correction. Finally, the inclination is kept unchanged at the corrected angle, and the cutter is used to perform in-situ cutting on the crystal to be processed, so that the cut plane is an accurate directionally cut crystal plane, effectively reducing the influence of the laser beam taper on the cutting accuracy.

[0092] In some of the embodiments, determining the second target crystal plane intersecting the directionally cut crystal plane inside the crystal to be processed includes the following steps:

[0093] Control the X-ray diffractometer to scan the crystal to be processed driven by the moving platform at a preset second diffraction peak position; the second diffraction peak position is the diffraction peak position corresponding to the second target crystal plane; during the scanning process, when a second detection signal for the crystal to be processed is detected, in response to the second detection signal, control the moving platform to stop rotating and control the X-ray diffractometer to stop scanning, and determine the second target crystal plane of the crystal to be processed at the pose when the moving platform stops rotating.

[0094] Among them, during the process of cutting the side of the crystal to be processed or marking the crystal orientation, it is necessary to find the second target crystal plane. Taking the (202) crystal plane as an example for the selection of the second target crystal plane, set the ω and 2θ angles of the X-ray diffractometer at the position of (37.65°, 75.30°), which is also the above-mentioned second diffraction peak position. At this position, control the X-ray diffractometer to continuously scan the gradually rotating crystal to be processed until a reflection signal is detected, and at this time, the second target crystal plane is determined.

[0095] In some of the embodiments, controlling the X-ray diffractometer to scan the crystal to be processed driven by the moving platform at a preset second diffraction peak position includes the following steps:

[0096] Determine a preset tilt angle for the rotation of the motion platform about the first tilt axis according to the second target crystal plane to be searched; control the motion platform to be fixed at the preset tilt angle and drive the crystal to be processed to rotate about the second tilt axis, and control the X-ray diffractometer to scan the crystal to be processed driven by the motion platform at the position of the second diffraction peak.

[0097] More specifically, the above preset tilt angle is determined according to the included angle between the second target crystal plane and the orientation cutting crystal plane. For example, if the included angle between the second target crystal plane and the orientation cutting crystal plane is 45°, then the preset tilt angle χ angle for the rotation of the motion platform about the first tilt axis is set to 45°, that is, the tilt plane for the rotation about the first tilt axis forms a 45° angle with the horizontal plane. At the same time, the φ angle for the rotation about the second tilt axis is changed within the range of 0° to 360° without change. Therefore, no matter when the X-ray diffractometer detects the reflection signal, the χ angle of the pose where the crystal to be processed rotates remains unchanged, and only the φ angle changes. And the common edge between the second target crystal plane and the orientation cutting, that is, the target calibration crystal direction, then the crystal plane to be finally cut is inclined at the same angle as the included angle between the above two crystal planes with respect to this common edge. Also, since the motion platform has been set to tilt at the preset angle according to this included angle, based on the above analysis, the crystal plane to be finally cut is exactly the horizontal plane. Therefore, at this time, the cutter only needs to cut the crystal to be processed horizontally.

[0098] Through the above embodiments, the tilt angle of the motion platform is determined according to the angle between the crystal planes, and a simple geometric relationship among the X-ray diffractometer, the motion platform and the cutter is constructed, so that finally the cutter only needs to cut the crystal to be processed in place in a specific direction, thereby effectively optimizing the cutting path.

[0099] The following specifically describes the crystal orientation processing method of the present application in combination with specific embodiments. Taking the (001) crystal plane of a diamond seed crystal with an unknown surface orientation of (10×10×10) mm 3 and the

[001] crystal direction marker as an example, please refer to Figure 4 , the process of orientation cutting the (001) crystal plane on the diamond surface includes the following steps:

[0100] Step S401, place the diamond seed crystal to be cut and calibrate the XRD optical path. Among them, fix the diamond seed crystal with an unknown orientation on the sample stage and calibrate the XRD optical path to ensure that the sample is parallel to the X-ray incident direction. At this time, the sample surface is parallel to the Bragg plane.

[0101] Step S402: Search for the (004) crystal plane. Specifically, it is similar to making a (004) diffraction pole figure of an unknown surface orientation, with the difference that the purpose of this step is to make the Bragg plane the (004) crystal plane inside the crystal by adjusting the χ-axis and φ-axis; among them, the (004) crystal plane is equivalent to the (001) crystal plane, and the (004) crystal plane is a non-extinction plane. More specifically, fix the ω and 2θ axes of the X-ray diffractometer at the diffraction peak position of diamond (004) (2θ is 119.52°, ω is 59.76°), set the rotation angle range around the χ-axis to 0° to 89° (if the included angle between the seed crystal surface and the (004) crystal plane exceeds this value, other equivalent non-extinction crystal planes can be selected), and the rotation angle range around the φ-axis to 0° to 360°; thus, the diamond seed crystal tilts in incremental steps within the χ-axis scanning range and rotates a full 360° at each step within the φ-axis rotation range. When the (004) crystal plane tilts and rotates to the Bragg plane, diffraction will occur. Therefore, when the detector detects the diffraction signal, the scanning ends.

[0102] Step S403: Turn on the laser cutter to cut the (004) crystal plane of one surface of the diamond seed crystal. Among them, since the Bragg plane is just a vertical plane, at this time, the laser cutter cuts vertically along the X-axis, and the (004) crystal plane of the diamond seed crystal can be cut out exactly. In addition, usually, the laser beam has a taper, which can be corrected by tilting the χ-axis to ensure that the cut plane is an accurate (004) crystal plane.

[0103] Step S404: Cut the (004) crystal planes on both the upper and lower surfaces of the diamond seed crystal. After one (004) plane is cut out, move the motion platform along the Y-axis and cut again, and the (004) crystal planes can be cut on both the upper and lower surfaces of the seed crystal. Since the (004) crystal plane is equivalent to the (001) crystal plane, at this time, it can be regarded as cutting the (001) crystal plane on the seed crystal surface.

[0104] Next, mark the crystal orientation of the diamond seed crystal to complete the crystal processing. Please refer to Figure 5 The crystal orientation calibration process of this diamond seed crystal includes the following steps:

[0105] Step S501: Change the placement orientation of the diamond seed crystal and calibrate the XRD optical path. Among them, take out the diamond seed crystal with the surface of the (001) crystal plane and unknown side orientation cut out by the above steps S401 to S404, fix the (001) crystal plane parallel to the motion platform, calibrate the XRD optical path to ensure that the seed crystal sample is parallel to the X-ray incident direction, and at this time, the sample surface is parallel to the Bragg plane.

[0106] Step S502: Search for the (202) crystal plane. Specifically, set the ω and 2θ axes of the X-ray diffractometer at the diffraction positions of diamond (202) (2θ is 75.30° and ω is 37.65°), tilt the χ axis by 45°, this value is the angle between the (202) crystal plane and the (004) crystal plane, and then perform an azimuthal scan (φ-scan) of the 202 crystal plane within the seed crystal plane. Since the in-plane (202) crystal plane and the out-of-plane (004) crystal plane are at 45 degrees along the

[100] crystal direction, when the

[100] crystal direction is made horizontal by rotating the φ axis, the detector can detect the reflection signal of the 202 crystal plane, and at this time, the XRD scanning work ends.

[0107] Step S503: Mark the

[001] crystal direction on the surface of the seed crystal. Among them, rotate the moving platform to the horizontal direction, at this time, the direction in which the carrying platform moves along the X axis is parallel to the

[001] crystal direction; turn on the laser cutter, align the focus to the surface of the seed crystal, and cut horizontally along the X axis. At this time, the (001) crystal plane on the side of the diamond seed crystal can be cut directionally, that is, the

[001] crystal direction on the surface of the seed crystal is calibrated.

[0108] It should be noted that the steps shown in the above process or the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although the logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in a different order than here.

[0109] This embodiment also provides a crystal orientation processing device. Figure 6 It is a structural block diagram of a crystal orientation processing device according to an embodiment of the present application, as Figure 6 shown. The device includes: an X-ray diffractometer 61, a cutter 25, a moving platform 63, and a controller 64; the controller 64 is respectively connected to the X-ray diffractometer 61, the cutter 25, and the moving platform 63, and is used to execute the crystal orientation processing method described in any of the above embodiments. Among them, the controller 64 can be a control device such as a chip or a single-chip microcomputer installed in the crystal orientation processing device, or a device such as a computer communicatively connected to each component in the crystal orientation processing device.

[0110] In some of these embodiments, the above crystal orientation processing device further includes a housing; the moving platform includes a rotating mechanism and a carrying platform; among them, the rotating mechanism is used to rotate around a first tilt axis and around a second tilt axis; the crystal to be processed is placed on the rotating mechanism; the carrying platform is installed at the bottom inside the housing and moves along a first horizontal direction and a second horizontal direction; among them, the first horizontal direction and the second horizontal direction are perpendicular to each other; the X-ray diffractometer and the rotating mechanism are mounted on the carrying platform. For example, the carrying platform can move along the first horizontal direction or the second horizontal direction through the moving track at the bottom of the housing.

[0111] The above cutter is fixed at the top inside the housing. Taking the laser cutter as an example of the cutter, the laser cutter fixed at the top inside the housing emits a laser beam towards the crystal to be processed below, and the cutting is completed.

[0112] This embodiment also provides an electronic device, including a memory and a processor. A computer program is stored in the memory, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0113] Optionally, the above electronic device may further include a transmission device and an input / output device. Among them, the transmission device is connected to the above processor, and the input / output device is connected to the above processor.

[0114] Optionally, in this embodiment, the above processor may be configured to execute the following steps through a computer program:

[0115] S1, control the moving platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to the target pose; wherein, in the target pose, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted by an X-ray diffractometer.

[0116] S2, use the cutter to perform directional cutting on the crystal to be processed in the target pose according to the first target crystal plane to obtain a directionally cut crystal plane.

[0117] S3, search for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the directionally cut crystal plane.

[0118] S4, determine the target calibration crystal orientation according to the common edge between the searched second target crystal plane and the directionally cut crystal plane, and use the cutter to continue to perform directional cutting on the crystal to be processed according to the determined target calibration crystal orientation to obtain the target processed crystal.

[0119] It should be noted that the specific examples in this embodiment may refer to the examples described in the above embodiments and optional implementation manners, and will not be elaborated herein.

[0120] In addition, in combination with the crystal orientation processing method in the above embodiments, the embodiments of the present application can be implemented by providing a storage medium. A computer program is stored on the storage medium; when the computer program is executed by a processor, any one of the crystal orientation processing methods in the above embodiments is implemented.

[0121] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memories. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in the present application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., and are not limited thereto. The processors involved in the embodiments provided in the present application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, etc., and are not limited thereto.

[0122] Those skilled in the art should understand that the technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as falling within the scope described in this specification.

[0123] The above embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A crystal orientation processing method, characterized in that, A crystal orientation processing apparatus for including an X-ray diffractometer, a cutter, and a motion platform; the method includes: Controlling the motion platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to a target pose; wherein, in the target pose, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted by the X-ray diffractometer; Using the cutter to perform orientation cutting on the crystal to be processed in the target pose according to the first target crystal plane to obtain an orientation cutting crystal plane; wherein, when the X-ray diffractometer is placed horizontally and the X-ray emitted by the X-ray diffractometer is incident on the crystal to be processed, a Bragg plane is formed by reflection on the first target crystal plane, and the Bragg plane is a vertical plane. At this time, control the cutter to open and perform in-situ cutting in the vertical direction on the surface of the crystal to be processed; Search for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the orientation cutting crystal plane; According to the common edge between the searched second target crystal plane and the orientation cutting crystal plane, determine the target calibration crystal direction, and use the cutter to perform orientation cutting on the crystal to be processed according to the determined target calibration crystal direction to obtain the target processed crystal.

2. The crystal orientation processing method according to claim 1, characterized in that The controlling the motion platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to a target pose includes: Controlling the X-ray diffractometer to scan the crystal to be processed driven by the motion platform under a preset first diffraction peak position; the first diffraction peak position is the diffraction peak position corresponding to the first target crystal plane; During the scanning process, when a first detection signal for the crystal to be processed is detected, in response to the first detection signal, control the motion platform to stop rotating and control the X-ray diffractometer to stop scanning; the pose of the crystal to be processed when the motion platform stops rotating is the target pose.

3. The crystal orientation processing method according to claim 2, characterized in that, The method further includes: Obtaining a preset crystal plane database; Retrieving a crystal plane matching the orientation cutting crystal plane to be cut from the crystal plane database; When the crystal plane matching the orientation cutting crystal plane to be cut is retrieved, determining the retrieved crystal plane matching the orientation cutting crystal plane to be cut as a preset reference plane; When the retrieval of the crystal plane matching the orientation cutting crystal plane to be cut fails, retrieving a crystal plane equivalent to the orientation cutting crystal plane to be cut from the crystal plane database, and determining the preset reference plane based on the retrieved crystal plane equivalent to the orientation cutting crystal plane to be cut; Determining the first diffraction peak position according to the preset reference plane.

4. The crystal orientation processing method according to claim 1, wherein The using the cutter to perform orientation cutting on the crystal to be processed in the target pose according to the first target crystal plane to obtain an orientation cutting crystal plane includes: Controlling the cutter to perform vertical direction orientation cutting on the crystal to be processed according to the first target crystal plane during the process of the motion platform moving in a first horizontal direction to obtain the orientation cutting crystal plane; wherein, the first horizontal direction is perpendicular to the first target crystal plane.

5. The crystal orientation processing method according to claim 4, wherein The method further includes: When controlling the cutter to perform vertical-directional cutting on the first surface of the crystal to be processed to obtain a first directionally cut crystal plane, controlling the moving platform to move to a specified position along a second horizontal direction. At the specified position, again controlling the cutter to perform vertical-directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the moving platform along the first horizontal direction, so as to obtain a second directionally cut crystal plane; wherein, the second horizontal direction is perpendicular to the first horizontal direction.

6. The crystal orientation processing method according to claim 4, characterized in that, The emitted light beam of the cutter has a taper; the method further includes: Correcting the tilt angle of the moving platform according to the taper of the emitted light beam of the cutter; Controlling the moving platform to tilt based on the tilt angle, and the cutter performs directional cutting on the crystal to be processed to obtain the directionally cut crystal plane.

7. The crystal orientation processing method according to claim 1, characterized in that, Searching for a second target crystal plane in the crystal to be processed; There is a common edge between the second target crystal plane and the directionally cut crystal plane, including: Controlling the X-ray diffractometer to scan the crystal to be processed driven by the moving platform at a preset second diffraction peak position; The second diffraction peak position is the diffraction peak position corresponding to the second target crystal plane; During the scanning process, when a second detection signal for the crystal to be processed is detected, in response to the second detection signal, controlling the moving platform to stop rotating and controlling the X-ray diffractometer to stop scanning, and determining the second target crystal plane of the crystal to be processed at the pose when the moving platform stops rotating.

8. The crystal orientation processing method according to claim 7, wherein The controlling the X-ray diffractometer to scan the crystal to be processed driven by the moving platform at a preset second diffraction peak position includes: Determining a preset tilt angle for the rotation of the moving platform around a first tilt axis according to the second target crystal plane to be searched; Controlling the moving platform to be fixed at the preset tilt angle and drive the crystal to be processed to rotate around a second tilt axis, and controlling the X-ray diffractometer to scan the crystal to be processed driven by the moving platform at the second diffraction peak position.

9. A crystal orientation processing device, characterized in that, The device includes: an X-ray diffractometer, a cutter, a moving platform, and a controller; The controller is respectively connected to the X-ray diffractometer, the cutter, and the moving platform, and is used to execute the crystal directional processing method according to any one of claims 1 to 8.

10. The crystal orientation processing device according to claim 9, characterized in that, The device further includes a housing; The moving platform includes a rotating mechanism and a carrying platform; wherein, the rotating mechanism is used to rotate around a first tilt axis and rotate around a second tilt axis; the crystal to be processed is placed on the rotating mechanism; The carrying platform is installed at the bottom inside the housing and moves along a first horizontal direction and a second horizontal direction; wherein, the first horizontal direction and the second horizontal direction are perpendicular to each other; the X-ray diffractometer and the rotating mechanism are mounted on the carrying platform; The cutter is fixed at the top inside the housing.

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