Reaction chamber

Abstract

The embodiment of the invention provides a reaction chamber. The reaction chamber comprises a chamber main body; the supporting assembly is arranged at the bottom of the internal space of the chamber main body and comprises a supporting surface for bearing the substrate; the target material assembly is arranged at the top of the chamber main body and comprises a target material of a source material to be deposited on the substrate; the surface of the target material is opposite to the supporting surface; the isolating ring surrounds the inner side wall of the target material and the supporting surface and is in contact with and fixed to the inner side wall of the chamber main body, and a first distance is formed between the isolating ring and the inner side wall of the target material; the first device is in contact with and fixed on the outer side wall of the chamber main body; the second device is in contact with and fixed on the outer side wall of the target material and is opposite to the first device; wherein the first device and the second device are used for generating sensing signals through receiving and transmitting signals; the sensing signal is used for representing a second distance between the center of the supporting surface and the center of the target material in an orthographic projection on the supporting surface; the second spacing is negatively correlated with the minimum value of the first spacing.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of semiconductor technology, and in particular to a reaction chamber. Background Art

[0002] Physical vapor deposition (PVD) machines are used in semiconductor manufacturing processes. There is an offset in the PVD machine when covering the chamber. For example, the offset of the upper electrode makes the distance between the target backed on the upper electrode and the shield in the chamber body too small or even zero contact, resulting in the scrapping of the substrate to be processed and the inability of the PVD machine to operate normally. Summary of the invention

[0003] In view of this, an embodiment of the present application provides a reaction chamber.

[0004] An embodiment of the present application provides a reaction chamber, which includes: a chamber body; a support assembly, which is arranged at the bottom of the internal space of the chamber body and includes a support surface for carrying a substrate; a target assembly, which is arranged at the top of the chamber body and includes a target of a source material to be deposited on the substrate; the surface of the target is arranged opposite to the support surface; an isolation ring, which surrounds the inner wall of the target and the support surface, contacts and is fixed to the inner wall of the chamber body, and has a first distance between the inner wall of the target; a first device, which contacts and is fixed to the outer wall of the chamber body; a second device, which contacts and is fixed to the outer wall of the target and is arranged opposite to the first device; wherein the first device and the second device are used to generate a sensing signal by receiving and sending signals; the sensing signal is used to characterize a second distance between the center of the support surface and the center of the target in the orthographic projection on the support surface; the second distance is negatively correlated with the minimum value of the first distance.

[0005] In some embodiments, the first device is a light emitter and the second device is a light sensor; or, the first device is a light sensor and the second device is a light emitter; wherein the light emitter is used to emit a light beam; and the light sensor is used to sense the light beam to generate a sensing signal.

[0006] In some embodiments, the reaction chamber further includes an adjustment component located outside the chamber body; the adjustment component is coupled to the target assembly and is used to drive the target assembly to move relative to the support assembly.

[0007] In some embodiments, the optical sensor is also used to generate an adjustment signal based on the second spacing being greater than a first preset threshold; wherein, the second spacing being greater than the first preset threshold indicates that the minimum value of the first spacing is less than the second preset threshold; the adjustment component is used to drive the target material component to move relative to the support component according to the received adjustment signal until the second spacing is less than or equal to the first preset threshold; wherein, the second spacing being less than or equal to the first preset threshold indicates that the minimum value of the first spacing is greater than or equal to the second preset threshold.

[0008] In some embodiments, the light sensor is also used to generate a passing signal based on the second spacing being less than or equal to a first preset threshold; the passing signal second spacing being less than or equal to the first preset threshold; wherein the second spacing being less than or equal to the first preset threshold indicates that the minimum value of the first spacing is greater than or equal to the second preset threshold.

[0009] In some embodiments, the reaction chamber includes three first devices and corresponding three second devices; the three first devices are respectively in contact with and fixed at three different first positions of the outer wall of the chamber body for determining the center of the support surface; the three second devices are respectively in contact with and fixed at three different second positions of the outer wall of the target material for determining the center of the target material.

[0010] In some embodiments, three different first positions determine that the center of the first circle coincides with the center of the support surface; and three different second positions determine that the center of the second circle coincides with the center of the target.

[0011] In some embodiments, three first devices and corresponding three second devices generate first coordinate information of the center of the supporting surface and second coordinate information of the center of the target material by sending and receiving signals; a second spacing is obtained based on the first coordinate information and the second coordinate information, as well as an offset direction between the center of the supporting surface and the center of the target material in the orthographic projection on the supporting surface.

[0012] In some embodiments, the reaction chamber further comprises a motor located outside the chamber body; the motor is coupled to the support assembly and is used to drive the support assembly to rise and fall along the axis direction of the support surface.

[0013] An embodiment of the present application provides another reaction chamber, which includes: a chamber body; a support assembly, which is arranged at the bottom of the internal space of the chamber body and includes a support surface for carrying a substrate; a target assembly, which is arranged at the top of the chamber body and includes a target of a source material to be deposited on the substrate; the surface of the target is arranged opposite to the support surface; an isolation ring, which surrounds the surface of the target and the support surface, contacts and is fixed to the inner wall of the chamber body, and has a first spacing between the inner wall of the target; three light emitters, which are respectively in contact with and fixed to three different positions of the outer wall of the chamber body; the emission surfaces of the three light emitters are in a first plane, and the first plane is parallel to the support surface; the three different positions of the emission surfaces of the three light emitters constitute a first three-point common circle, and the center of the first three-point common circle is at the same position as the center of the support surface. The three optical sensors are respectively in contact with and fixed at three different second positions on the outer wall of the target; the receiving surfaces of the three optical sensors are in a second plane, and the second plane is parallel to the target; the three different positions of the receiving surfaces of the three optical sensors constitute a second three-point common circle, and the center of the second three-point common circle coincides with the center of the target in the orthographic projection on the supporting surface; wherein the emitting surfaces of the three light emitters are respectively arranged opposite to the corresponding receiving surfaces of the three optical sensors along the axial direction of the supporting surface; wherein the three light emitters are used to emit a light beam; the three optical sensors are used to sense the light beam to generate a sensing signal; the sensing signal is used to characterize a second spacing between the center of the supporting surface and the center of the target in the orthographic projection on the supporting surface; the second spacing is negatively correlated with the minimum value of the first spacing.

[0014] In each embodiment of the present application, a position positioning device is added, a first device is used to position the isolation ring, and a second device is used to position the target material, so as to obtain a first distance between the target material and the isolation ring. The first distance is used to characterize whether the distance between the target material and the isolation ring is too small or whether the target material and the isolation ring are in contact, so as to avoid the risk of zero-distance contact between the target material and the isolation ring, or avoid the risk of too small a distance between the target material and the isolation ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is one of the situations in which the PVD machine in the related embodiment is offset when covering the cavity;

[0016] Figure 2 This is the second case where the PVD machine in the related embodiment is offset when covering the cavity;

[0017] Figure 3 It is one of the cross-sectional schematic diagrams of the PVD machine in the embodiment of the present application;

[0018] Figure 4 The second cross-sectional schematic diagram of the PVD machine in the embodiment of the present application;

[0019] Figure 5 It is one of the top plan schematic diagrams of the support assembly and components related to the support assembly in the embodiment of the present application;

[0020] Figure 6 One of the top plan views of the target and target-related components in the embodiment of the present application

[0021] Figure 7 The second schematic top view of the support assembly and components related to the support assembly in the embodiment of the present application;

[0022] Figure 8 The second schematic top view of the target material and components related to the target material in the embodiment of the present application;

[0023] Fig. 9 The third schematic top view of the support assembly and components related to the support assembly in the embodiment of the present application;

[0024] Fig.10 This is the third schematic top view of the target material and components related to the target material in the embodiment of the present application. DETAILED DESCRIPTION

[0025] The following will combine the implementation methods and drawings of this application to clearly and completely describe the technical solutions in the implementation methods of this application. The described implementation methods are only part of the implementation methods of this application, not all of the implementation methods. Based on the implementation methods in this application, all other implementation methods obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0026] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0027] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0028] Figure 1 This is one of the situations in which the PVD machine in the related embodiment is offset when covering the cavity. Figure 2This is the second case where the PVD machine in the related embodiment is offset when covering the cavity.

[0029] refer to Figure 1 When the PVD machine is in the cover chamber, the upper electrode ( Figure 1 The target material 108 backed by the upper electrode 108 and the shielding member (or shielding ring, hereinafter referred to as the isolation ring 110) fixed in the chamber body 102 are offset, so that the first distance DD1 between the target material 108 and the isolation ring 110 is too small, for example, smaller than the range allowed by the process, so that an arc is formed between the target material 108 and the isolation ring 110, which interferes with the formation of plasma in the plasma region 118, resulting in a low yield of the substrate to be processed and the scrapping of the substrate.

[0030] refer to Figure 2 For example, the target 108 and the isolation ring 110 have zero distance contact ( Figure 2 As shown by the dotted circle DL in the figure, the target material 108 is grounded through the isolation ring 110, and the power applied between the upper electrode (connected to the DC power supply terminal DC) and the lower electrode (connected to the ground terminal GND) cannot be output, and plasma cannot be formed in the plasma region 118, resulting in the PVD machine being unable to operate normally.

[0031] In some embodiments, the PVD machine can use positioning pins to determine the position of the upper electrode when covering the cavity to avoid excessive deviation from the upper electrode. For example, zero-distance contact between the target material and the isolation ring can be avoided. However, there is still a risk that the distance between the target material and the isolation ring is too small.

[0032] Figure 3 This is one of the cross-sectional schematic diagrams of the PVD machine in the embodiment of the present application. Figure 4 This is the second cross-sectional schematic diagram of the PVD machine in the embodiment of the present application.

[0033] The embodiment of the present application provides a first reaction chamber, which includes: a chamber body 102; a support assembly 104, which is arranged at the bottom of the internal space SP of the chamber body and includes a support surface SS1 for carrying a substrate 106; a target assembly, which is arranged at the top of the chamber body 102 and includes a target 108 of a source material to be deposited on the substrate 106; a surface SS2 of the target is arranged opposite to the support surface SS1; an isolation ring 110, which surrounds the inner side wall SS3 of the target and the support surface SS1, contacts and is fixed to the inner side wall SS5 of the chamber body, and has a first distance DD1 between the inner side wall SS3 of the target; a first device, which contacts and is fixed to the outer side wall SS6 of the chamber body; a second device, which contacts and is fixed to the outer side wall SS4 of the target and is arranged opposite to the first device; wherein the first device and the second device are used to generate a sensing signal by sending and receiving signals; the sensing signal is used to characterize a second distance DD2 between the center of the support surface SS1 and the center of the surface SS2 of the target in the orthographic projection on the support surface; the second distance DD2 is negatively correlated with the minimum value of the first distance DD1.

[0034] The surface of the target 108 located in the chamber body includes a target surface SS2 disposed opposite to the support surface SS1 , and an inner sidewall SS3 of the target disposed opposite to the isolation ring 110 .

[0035] The isolation ring 110 surrounds the support surface SS1. Figure 3 The isolating ring 110 shown directly surrounds the support surface SS1 and can also be understood as Figure 4 The projection inner spacer ring 110 on the support surface SS1 in the axial direction of the support surface is shown surrounding the support surface SS1.

[0036] The chamber body 102 has an internal space SP. The support assembly 104 and the isolation ring 110 may be disposed in the internal space SP. The space surrounded by the isolation ring 110 is used to form a plasma region 118 located between the surface SS2 of the target and the support surface SS1. For example, a high-density plasma is formed in the plasma region 118. In some embodiments, the bottom of the internal space SP of the chamber body 102 further includes an opening for the substrate 106 to enter and exit the internal space SP (see 3 and 4 in the figure). Figure 4 not shown).

[0037] The target assembly includes a target 108, a backing plate (3 and 4 in the figure) located on the target 108, and a backing plate (3 and 4 in the figure) located on the backing plate. Figure 4 The target 108 is backed on a backing plate. The target 108 contacts and is connected to the backing plate, and the backing plate can be connected to a DC power supply terminal DC.

[0038] The surface SS2 of the target and the inner side wall SS3 of the target are exposed to the inner space SP of the chamber body 102, and the surface SS2 of the target is arranged opposite to the support surface SS1 along the axis direction of the support surface. The target 108 provides a source material deposited on the substrate 106 during the PVD process. The material of the target 108 includes silicon (Si), titanium (Ti), aluminum (Al), copper (Cu), tungsten (W) or other suitable materials.

[0039] In some embodiments, the reaction chamber further includes a motor 112 located outside the chamber body 102 ; the motor 112 is coupled to the support assembly 104 and is used to drive the support assembly 104 to rise and fall along the axis direction of the support surface.

[0040] like Figure 3 As shown, the motor 112 drives the support assembly 104 to rise to a first position along the axis direction of the support surface. The first position can be understood as a position where the source material of the target material 108 is being deposited on the substrate 106. Figure 4 As shown, the motor 112 drives the support assembly 104 to descend along the axis direction of the support surface to the second position, and the second position can be understood as the position where the substrate 106 is being loaded / unloaded.

[0041] In some embodiments, the motor 112 may be mechanically coupled to the support assembly 104 via a lift assembly 111 at least partially disposed within the chamber body 102 .

[0042] In some embodiments, the reaction chamber further includes a sealing assembly 114 disposed between the target 108 and the chamber body 102 , and the sealing assembly 114 is used to prevent vacuum leakage between the target 108 and the chamber body 102 in the inner space SP.

[0043] In some embodiments, the reaction chamber further includes a ground shield 116 that contacts both the isolation ring 110 and the chamber body 102. Figure 3 The ground shield 116 extends to contact the support assembly 104, and the isolation ring 110, the ground shield 116, and the support assembly 104 cooperate to form an integral component of the extended contact, which surrounds the reaction space AP for forming the plasma region 118, and the integral component can prevent the plasma from leaving the reaction space AP.

[0044] Figure 5 This is one of the top plan schematic diagrams of the support assembly and components related to the support assembly in an embodiment of the present application. Figure 6 This is one of the top plan schematic diagrams of the target material and components related to the target material in the embodiments of the present application. Figure 7 This is the second schematic top view of the support assembly and components related to the support assembly in the embodiment of the present application. Figure 8This is a second top plan view of the target and target-related components in the embodiment of the present application. It should be noted that in order to clearly show the relative positional relationship between the support assembly and the target, Figure 5 , Figure 7 and Fig. 9 The outer contours of the chamber body and the outer contours of the support surface are shown. Figure 6 , Figure 8 and Fig.10 The outer contour of the target is displayed, and the outer contour of the surface of the target is displayed in perspective.

[0045] In some embodiments, the first device is a light emitter and the second device is a light sensor; or, the first device is a light sensor and the second device is a light emitter; wherein the light emitter is used to emit a light beam; and the light sensor is used to sense the light beam to generate a sensing signal.

[0046] The light emitter may include a vertical surface emitting laser (VSCEL) or an infrared ray light emitting diode (IR LED).

[0047] The light sensor may be an optical detector that senses and detects the laser light emitted by the light emitter and then converts the light signal into an electrical signal. The light sensor may include a single or multiple photodiodes.

[0048] refer to Figure 3 , Figure 5 and Figure 6 , the light emitter 201 contacts and is fixed to the outer wall SS6 of the chamber body. Since the support assembly 104 and the chamber body 102 are relatively fixed in an XY plane parallel to the support surface SS1, the light emitter 201 fixed to the outer wall SS6 of the chamber body can be used to locate the coordinates of the support surface SS1 of the support assembly 104, for example, the coordinates of the center of the support surface SS1. The light sensor 301 contacts and is fixed to the outer wall SS4 of the target. The light sensor 301 fixed to the outer wall SS4 of the target can be used to locate the coordinates of the surface SS2 of the target, for example, the coordinates of the center of the surface SS2 of the target.

[0049] The light emitter 201 and the light sensor 301 are arranged opposite to each other along the axial direction of the supporting surface SS1. The light emitter 201 is used to emit a light beam LB in a certain wavelength range, and the light sensor 301 is used to sense the light beam LB to generate a sensing signal. The sensing signal is used to determine the physical characteristics between the light emitter 201 and the light sensor 301, for example, to determine the relative position information between the light emitter 201 and the light sensor 301.

[0050] In some embodiments, the sensing signal includes coordinate information of the target 108 and coordinate information of the support assembly 104, as well as offset information between the coordinates of the target 108 and the coordinates of the support assembly 104, the offset information including information on the offset direction and information on the offset amount. For example, the offset amount information is represented by a second distance DD2 between the center of the support surface SS1 and the center of the target surface SS2 in the orthographic projection on the support surface, and the offset direction information is represented by the direction in which the center of the support surface SS1 points to the center of the target surface SS2. When the PVD machine is in the cover chamber, for example, when the target is replaced, along with the end cover (the mechanical bearing component of the target), Figure 3 and Figure 4 The light emitter 201 is fixed to the outer wall SS6 of the chamber body and is fixed to the chamber body 102. Since the light emitter 201 is more precise, compared with the light sensor 301 which moves with the opening and closing of the end cover, the light emitter 201 remains fixed, thus avoiding unnecessary damage to the light emitter 201 due to the opening and closing movement, which is more conducive to the maintenance and care of the light emitter 201.

[0051] In other embodiments, reference Figure 7 , the optical sensor 301 contacts and is fixed to the outer wall SS6 of the chamber body, and is used to locate the coordinates of the support surface SS1 of the support assembly 104; Figure 8 The light emitter 201 contacts and is fixed to the outer wall SS4 of the target material to locate the coordinates of the surface SS2 of the target material. Figure 7 and Figure 8 The cross-sectional view of the corresponding reaction chamber can be referred to as Figure 3 and Figure 4 The light emitter 201 and the light sensor 301 are shown interchangeably for ease of understanding.

[0052] In some embodiments, the outer contour of the chamber body 102 is larger than the outer contour of the target assembly, and the first device is fixed to the outer side wall SS6 of the chamber body. The first device can be fixed to the outer side wall SS4 of the target assembly through an extension component to ensure that the first device and the second device are arranged relative to each other in the axial direction of the support surface SS1. Figure 3 and Figure 4 The outer contour of the chamber body 102 is larger than the outer contour of the target assembly, the light emitter 201 can be fixed to the outer wall SS6 of the chamber body through the extension component 200, and the light sensor 301 can be fixed to the outer wall SS4 of the target through the extension component 300 to ensure that the emitting surface of the light emitter 201 and the receiving surface of the light sensor 301 are relatively arranged in the axial direction of the support surface SS1.

[0053] In some embodiments, the reaction chamber includes a plurality of first devices and a corresponding plurality of second devices. For example, the reaction chamber includes two first devices and two corresponding second devices, and the greater the number of combinations of the first devices and the corresponding two second devices, the more conducive it is to obtain more sufficient information for determining the support surface SS1 and the surface SS2 of the positioning target.

[0054] In some embodiments, the reaction chamber further includes a regulating component ( Figure 3 and Figure 4 The adjusting assembly is coupled to the target assembly and is used to drive the target assembly to move relative to the supporting assembly.

[0055] In some embodiments, the adjustment assembly includes a transmission device mechanically coupled to the target assembly ( Figure 3 and Figure 4 (not shown). The transmission device can realize translation in a plane or rotation around an axis, for example, translation in the X direction in the XY plane, or rotation around the Z axis.

[0056] The adjustment component can adjust the relative displacement between the surface SS2 of the target material and the support surface SS1, and can also adjust the parallelism between the surface SS2 of the target material and the support surface SS1.

[0057] In some embodiments, the adjustment component can drive the target assembly to move relative to the support assembly along two mutually orthogonal directions (e.g., X direction and Y direction). In an optional embodiment, the adjustment component can drive the target assembly to rotate relative to the support assembly around one direction (e.g., X direction or Y direction). For example, when it is detected that the surface SS2 of the target is not parallel to the support surface SS1 or the angle between them is greater than a threshold value (the parallelism between the surface SS2 of the target and the support surface SS1 is unqualified), the adjustment component can drive the target assembly to rotate around one direction until the surface SS2 of the target is parallel to the support surface SS1 or the angle between them is less than or equal to the threshold value. The threshold value can be set according to actual needs, for example, the threshold value is 0.05 degrees.

[0058] In some embodiments, the optical sensor is also used to generate an adjustment signal based on the second spacing being greater than a first preset threshold; wherein, the second spacing being greater than the first preset threshold indicates that the minimum value of the first spacing is less than the second preset threshold; the adjustment component is used to drive the target material component to move relative to the support component according to the received adjustment signal until the second spacing is less than or equal to the first preset threshold; wherein, the second spacing being less than or equal to the first preset threshold indicates that the minimum value of the first spacing is greater than or equal to the second preset threshold.

[0059] The first preset threshold value can be set according to actual needs, or it can be a default value, which can be summarized through experience or obtained through simulation experiments. Exemplarily, the second spacing being greater than the first preset threshold value can be understood as a deviation in the position between the target assembly and the support assembly, and the deviation exceeds the range allowed by the process. The position between the target assembly and the support assembly needs to be adjusted to eliminate or reduce the deviation, so that the second spacing is within the range allowed by the process, that is, the second spacing is less than or equal to the first preset threshold value.

[0060] Since the isolation ring 110 is fixed to the inner wall of the chamber body 102, the relative positional relationship between the target assembly and the support assembly can also substantially reflect the relative positional relationship between the target assembly and the isolation ring 110. Exemplarily, the first spacing being less than the second preset threshold value can be understood as a deviation between the position of the target assembly and the isolation ring 110, which exceeds the range allowed by the process, and the position between the target assembly and the isolation ring 110 needs to be adjusted to eliminate or reduce the deviation, so that the first spacing is within the range allowed by the process, that is, the first spacing is greater than or equal to the second preset threshold value.

[0061] In some embodiments, the light sensor is also used to generate a passing signal based on the second spacing being less than or equal to a first preset threshold; the passing signal second spacing being less than or equal to the first preset threshold; wherein the second spacing being less than or equal to the first preset threshold indicates that the minimum value of the first spacing is greater than or equal to the second preset threshold.

[0062] Exemplarily, by the signal characterizing that the second spacing is less than or equal to the first preset threshold, it can be understood that the positional relationship between the target assembly and the isolation ring is within the range allowed by the process, and subsequent steps can be performed without intervention of the adjustment assembly.

[0063] Fig. 9 This is the third schematic top view of the support assembly and components related to the support assembly in the embodiment of the present application. Fig.10 This is the third schematic top view of the target material and components related to the target material in the embodiment of the present application.

[0064] In some embodiments, the reaction chamber includes three first devices and corresponding three second devices; the three first devices are respectively in contact with and fixed at three different first positions of the outer wall of the chamber body for determining the center of the support surface; the three second devices are respectively in contact with and fixed at three different second positions of the outer wall of the target material for determining the center of the target material.

[0065] In some embodiments, a light sensor is installed in any three directions of the front, rear, left and right directions of the target material, and correspondingly, a light emitter is installed in any three directions of the front, rear, left and right directions of the chamber body.

[0066] refer to Figure 3 , Fig. 9 and Fig.10 , the reaction chamber includes three first devices and corresponding three second devices, the three first devices can determine the plane where the support surface SS1 is located, and the three second devices can determine the plane where the surface SS2 of the target material is located. For example, the three first devices are abstracted as 3 points, and the 3 points can determine a plane, that is, the minimum number of first devices for determining the plane where the support surface SS1 is located is three. In an optional embodiment, more than three first devices and a corresponding number of second devices can be set to obtain more sufficient information for determining the plane where the support surface SS1 is located and the plane where the surface SS2 of the target material is located.

[0067] Preferably, the plane determined by the position information of the three different first positions is parallel to the support surface. Since the chamber body and the support surface are relatively fixed, the position information of the three different first positions is converted to obtain the position information of the support surface; the plane determined by the position information of the three different second positions is parallel to the surface of the target material. After conversion, the position information of the three different second positions is obtained. Preferably, the plane determined by the three different first positions is coplanar with the support surface. Since the chamber body and the support surface are relatively fixed, the position information of the three different first positions is converted to obtain the position information of the center of the support surface; the plane determined by the three different second positions is coplanar with the surface of the target material. After conversion, the position information of the three different second positions is obtained to obtain the position information of the center of the surface of the target material.

[0068] In some embodiments, the first center of the circle determined by the three different first positions coincides with the center of the support surface; the second center of the circle determined by the three different second positions coincides with the center of the target. In this way, the center of the circle determined by the position information of the three different first positions can be equivalent to the center of the surface of the target without conversion.

[0069] In some embodiments, three first devices and corresponding three second devices generate first coordinate information of the center of the supporting surface and second coordinate information of the center of the target material by sending and receiving signals; a second spacing is obtained based on the first coordinate information and the second coordinate information, as well as an offset direction between the center of the supporting surface and the center of the target material in the orthographic projection on the supporting surface.

[0070] Exemplarily, the first device is a light emitter, and the second device is a light sensor. Light beams are emitted by three light emitters, and light beams are received by three light sensors to sense and collect coordinate information. The coordinates (X1, Y1), coordinates (X2, Y2), and coordinates (X3, Y3) collected by the three light sensors are calculated by the formula (X1-X0)^2+(Y1-Y0)^2=R^2(X2-X0)^2+(Y2-Y0)^2=R^2(X3-X0)^2+(Y3-Y0)^2=R^2 to calculate the center coordinates (X0, Y0) of the surface of the target. By comparing the center coordinates (X0, Y0) of the surface of the target with the center coordinates (X_default, Y_default) of the support surface, it is determined whether the center of the surface of the target and the center of the support surface are in a coincidence state or in an offset state. If in an offset state, the offset direction and offset amount of the surface of the target and the support surface can be calculated by the formula, and an adjustment signal can be generated.

[0071] In some embodiments, if the center of the target surface coincides with the center of the support surface, the three optical sensors will not generate an alarm message. If the center of the target surface coincides with the center of the support surface or not, the three optical sensors will generate an alarm message and generate an adjustment signal, which is used to adjust the position of the center of the target surface and the center of the support surface until the center of the target surface coincides with the center of the support surface, and the three optical sensors will not generate an alarm message.

[0072] refer to Fig. 9 and Fig.10The embodiment of the present application provides a second reaction chamber, which comprises: a chamber body 102; a support assembly 104, which is arranged at the bottom of the internal space SP of the chamber body, and includes a support surface SS1 for carrying a substrate 106; a target assembly, which is arranged at the top of the chamber body 102, and includes a target 108 of a source material to be deposited on the substrate 106; a surface SS2 of the target is arranged opposite to the support surface SS1; an isolation ring 110, which surrounds the inner side wall SS3 of the target and the support surface SS1, and contacts and is fixed to the chamber body. The inner wall SS5 of the chamber body is provided with a first spacing DD1 from the inner wall SS3 of the target material; the three light emitters 201, 202, 203 are respectively in contact with and fixed at three different positions of the outer wall SS6 of the chamber body; the emission surfaces of the three light emitters 201, 202, 203 are in a first plane, and the first plane is parallel to the support surface; the three different positions of the emission surfaces of the three light emitters 201, 202, 203 constitute a first three-point common circle, and the center of the first three-point common circle and the center of the support surface are on the support surface. The three optical sensors 301, 302, 303 are respectively in contact with and fixed at three different second positions of the outer wall of the target; the receiving surfaces of the three optical sensors 301, 302, 303 are in the same second plane, and the second plane is parallel to the surface of the target; the three different positions of the receiving surfaces of the three optical sensors 301, 302, 303 constitute a second three-point common circle, and the center of the second three-point common circle coincides with the center of the target in the orthographic projection on the support surface; wherein the three light emitters 201, 2 The emitting surfaces of 02 and 203 are respectively arranged opposite to the receiving surfaces of the corresponding three optical sensors 301, 302, 303 along the axial direction of the supporting surface; wherein, the three light emitters 201, 202, 203 are used to emit a light beam; the three optical sensors 301, 302, 303 are used to sense the light beam to generate a sensing signal; the sensing signal is used to characterize the second distance DD2 between the center of the supporting surface and the center of the target material in the orthographic projection on the supporting surface; the second distance DD2 is negatively correlated with the minimum value of the first distance DD1.

[0073] In each embodiment of the present application, by adding a position positioning device, a first device is used to position the isolation ring, and a second device is used to position the target, so as to obtain a first spacing between the target and the isolation ring. The first spacing is used to characterize whether the spacing between the target and the isolation ring is too small or whether the target and the isolation ring are in contact, so as to avoid the risk of zero-distance contact between the target and the isolation ring, or to avoid the risk of too small spacing between the target and the isolation ring. Exemplarily, when the PVD machine is offset during the cavity cover, the first spacing between the target and the isolation ring is too small or the target and the isolation ring are in contact, and it is considered that there is a deviation in the relative position between the target and the isolation ring. The first spacing between the target and the isolation ring is adjusted by adjusting the component to eliminate or reduce the deviation, so that the first spacing is within the range allowed by the process, so as to avoid the formation of an arc between the target and the isolation ring, which may lead to a low yield of the substrate to be processed and the scrapping of the substrate, or avoid the target being grounded through the isolation ring, which may cause the PVD machine to fail to operate normally.

[0074] The above description is only a preferred implementation mode of the present application, and does not limit the protection scope of the present application. All equivalent structural changes made by using the contents of the present application specification and drawings under the inventive concept of the present application, or directly / indirectly applied in other related technical fields are included in the protection scope of the present application.

Claims

1. A reaction chamber, characterized in that: include: Chamber body; a support assembly, disposed at the bottom of the interior space of the chamber body, comprising a support surface for carrying a substrate; a target assembly, disposed on the top of the chamber body, comprising a target of a source material to be deposited on a substrate; a surface of the target being disposed opposite to the support surface; an isolation ring, surrounding the inner side wall of the target and the support surface, contacting and fixed to the inner side wall of the chamber body, and having a first distance between the isolation ring and the inner side wall of the target; A first component, contacting and fixed to the outer side wall of the chamber body; A second device, contacting and fixed to the outer side wall of the target material, and arranged opposite to the first device; Among them, the first device and the second device are used to generate a sensing signal by sending and receiving signals; the sensing signal is used to characterize a second distance between the center of the supporting surface and the center of the target material within the orthographic projection on the supporting surface; the second distance is negatively correlated with the minimum value of the first distance.

2. The reaction chamber according to claim 1, characterized in that: The first device is a light emitter, and the second device is a light sensor; or, the first device is a light sensor, and the second device is a light emitter; The light emitter is used to emit a light beam; and the light sensor is used to sense the light beam to generate the sensing signal.

3. The reaction chamber according to claim 2, characterized in that: The reaction chamber further comprises an adjusting component located outside the chamber body; the adjusting component is coupled to the target component and is used to drive the target component to move relative to the supporting component.

4. The reaction chamber according to claim 3, characterized in that: The optical sensor is further used to generate an adjustment signal according to the second distance being greater than a first preset threshold; wherein the second distance being greater than the first preset threshold indicates that the minimum value of the first distance is less than the second preset threshold; The adjustment component is used to drive the target material component to move relative to the support component according to the received adjustment signal until the second distance is less than or equal to the first preset threshold; wherein, the second distance is less than or equal to the first preset threshold, indicating that the minimum value of the first distance is greater than or equal to the second preset threshold.

5. The reaction chamber according to claim 3, characterized in that: The optical sensor is also used to generate a passing signal according to the second distance being less than or equal to a first preset threshold; the passing signal means that the second distance is less than or equal to the first preset threshold; wherein, the second distance being less than or equal to the first preset threshold indicates that the minimum value of the first distance is greater than or equal to the second preset threshold.

6. The reaction chamber according to claim 1, characterized in that: The reaction chamber comprises three of the first devices and corresponding three of the second devices; The three first components are respectively in contact with and fixed to three different first positions of the outer side wall of the chamber body, so as to determine the center of the support surface; The three second devices are respectively in contact with and fixed at three different second positions of the outer side wall of the target material, so as to determine the center of the target material.

7. The reaction chamber according to claim 6, characterized in that: Three different first positions determine that the center of a first circle coincides with the center of the support surface; three different second positions determine that the center of a second circle coincides with the center of the target.

8. The reaction chamber according to claim 6, characterized in that: The three first devices and the corresponding three second devices generate first coordinate information of the center of the support surface and second coordinate information of the center of the target material by sending and receiving signals; The second distance and the offset direction between the center of the support surface and the center of the target material in the orthographic projection on the support surface are obtained according to the first coordinate information and the second coordinate information.

9. The reaction chamber according to claim 1, characterized in that: The reaction chamber further comprises a motor located outside the chamber body; the motor is coupled to the support assembly and is used to drive the support assembly to rise and fall along the axis direction of the support surface.

10. A reaction chamber, characterized in that: include: Chamber body; a support assembly, disposed at the bottom of the interior space of the chamber body, comprising a support surface for carrying a substrate; a target assembly, disposed on the top of the chamber body, comprising a target of a source material to be deposited on a substrate; a surface of the target being disposed opposite to the support surface; an isolation ring, surrounding the surface of the target and the support surface, contacting and fixed to the inner wall of the chamber body, and having a first distance between the isolation ring and the inner wall of the target; Three light emitters are respectively in contact with and fixed at three different positions of the outer side wall of the chamber body; the emission surfaces of the three light emitters are in a first plane, and the first plane is parallel to the support surface; the three different positions of the emission surfaces of the three light emitters constitute a first three-point common circle, and the center of the first three-point common circle coincides with the center of the support surface in the orthographic projection on the support surface; Three optical sensors are respectively in contact with and fixed at three different second positions of the outer wall of the target; the receiving surfaces of the three optical sensors are in a second plane, and the second plane is parallel to the surface of the target; the three different positions where the receiving surfaces of the three optical sensors are located constitute a second three-point common circle, and the center of the second three-point common circle coincides with the center of the target in the orthographic projection on the support surface; Wherein, the emitting surfaces of the three light emitters are respectively arranged opposite to the receiving surfaces of the corresponding three light sensors along the axial direction of the supporting surface; Among them, the three light emitters are used to emit a light beam; the three light sensors are used to sense the light beam to generate a sensing signal; the sensing signal is used to characterize a second distance between the center of the supporting surface and the center of the target material within the orthographic projection on the supporting surface; the second distance is negatively correlated with the minimum value of the first distance.

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