A chemical vapor deposition method for integrated preparation of a C buffer layer and a SiC protective coating on a single crystal Si substrate

Abstract

The present invention belongs to the technical field of protective coating preparation, and specifically relates to a chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate. A thermally excited chemical vapor deposition system is adopted, an HMDSO / n-Hexane system is selected as a raw material and its ratio is controlled, a graphite rod is placed in the reaction chamber as an auxiliary carbon source, and when the working pressure is 100Pa~1000Pa and the working temperature is 1000℃~1250℃, a densely structured C buffer layer and a SiC protective coating are deposited on the surface of the single crystal Si substrate. The raw materials used in the present invention are low in price and non-toxic and harmless, and the reaction by-products are non-toxic and harmless. This method can be used to integrally prepare a C buffer layer and a SiC protective coating. The prepared coating has a dense structure and is well combined with the single crystal Si substrate, and can provide excellent corrosion protection for the single crystal Si substrate.

Description

Technical Field

[0001] The present invention belongs to the technical field of protective coating preparation, and in particular relates to a chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single-crystal Si substrate. Background Art

[0002] In semiconductor dry etching processes, silicon-based focus rings, as core components within the etching chamber, regulate plasma distribution to ensure uniform etching along the wafer edge. However, the continuous, high-density plasma bombardment and chemical corrosion from fluorine-containing gases during the etching process can cause physical and chemical damage to the surface of the silicon-based focus rings, thereby reducing the lifespan of the consumables. To extend the lifespan of silicon-based focus rings, SiC coatings can be applied. Studies have shown that applying SiC coatings to single-crystal Si substrates can increase the lifespan of silicon-based focus rings by approximately three times.

[0003] However, due to the lattice constant and thermal expansion coefficient differences between single-crystal Si and SiC reaching 20% ​​and 8%, respectively, SiC coatings directly prepared on single-crystal Si surfaces are prone to cracking and peeling. Therefore, introducing a C buffer layer between the single-crystal Si substrate and the SiC coating is of great practical significance for improving the interfacial bonding between Si and SiC. Summary of the Invention

[0004] The purpose of the present invention is to provide a chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single-crystal Si substrate, focusing on solving the problems of easy loss of single-crystal Si in an etching environment and difficulty in combining single-crystal Si and SiC.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions:

[0006] A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single-crystal Si substrate employs chemical vapor deposition technology, uses hexamethyldisiloxane (HMDSO) / n-hexane (n-Hexane) as raw materials, and a graphite rod as an auxiliary carbon source. The gas system introduced into the reaction chamber is an HMDSO / n-Hexane-H2-Ar system, and includes the following steps:

[0007] (1) HMDSO and n-Hexane are mixed in a volume ratio of 1-5:1-5, stirred evenly and used as a liquid raw material for preparing a C buffer layer and a SiC protective coating;

[0008] (2) Before depositing the C buffer layer and SiC protective coating on the single crystal Si substrate, hydrogen is introduced into the reaction chamber to etch the single crystal Si;

[0009] (3) When depositing the C buffer layer and SiC protective coating on the single crystal Si substrate, the graphite rod is placed around the single crystal Si substrate, the deposition temperature is 1000℃~1250℃, the working pressure is 100Pa~1000Pa, and the furnace is cooled after the deposition is completed.

[0010] In the chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, in step (1), HMDSO and n-Hexane are mixed in a volume ratio of 2:1, and the liquid raw material of the mixture of HMDSO and n-Hexane is fully stirred before use.

[0011] In the chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, in step (2), the hydrogen flow rate is 10-1000 sccm and the etching time is 1-10 min.

[0012] In the chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, in step (2), the hydrogen flow rate is 600 sccm and the etching time is 1 min.

[0013] The chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, in step (3), the flow rate of the liquid raw material mixed with HMDSO and n-Hexane is 0.1~10g / min, the flow rate of argon is 50~10000sccm, the flow rate of hydrogen is 10~1000sccm, the deposition temperature is 1000℃~1150℃, the working pressure is 500Pa~1000Pa, and the deposition time is 1~5h.

[0014] In the chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, in step (3), the flow rate of the liquid raw material mixed with HMDSO and n-Hexane is 1 g / min.

[0015] In the chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, in step (3), the argon flow rate is 3000 sccm and the hydrogen flow rate is 600 sccm.

[0016] In the chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, in step (3), the deposition temperature is 1150° C., the working pressure is 600 Pa, and the deposition time is 2 h.

[0017] The chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate has a thickness of 10 μm to 5 mm for the integrally deposited C buffer layer and SiC corrosion-resistant protective layer on the single crystal Si substrate.

[0018] The chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate has a thickness of the C buffer layer of 1 μm to 50 μm and a thickness of the SiC corrosion-resistant protective layer of 10 μm to 200 μm.

[0019] The design idea of ​​the present invention is:

[0020] At present, the preparation of silicon carbide coatings in industrial production mostly uses methyltrichlorosilane (MTS) as raw material. Its tail gas is corrosive and requires additional tail gas treatment equipment. In addition, the preparation of SiC coatings directly on the surface of single-crystalline Si is prone to cracking and peeling. In response to the problem of tail gas pollution, the present invention starts with the raw materials, adopts chemical vapor deposition technology (CVD), and uses hexamethyldisiloxane (HMDSO) / n-hexane (n-Hexane) as the raw material system to avoid the introduction of chloride ions and the like. In response to the problem of Si-SiC interface bonding, we introduce a C buffer layer between the single-crystalline Si substrate and the SiC coating, use graphite rods as auxiliary carbon sources, and integrate the C buffer layer and SiC protective coating on the single-crystalline Si substrate to improve the interface bonding between single-crystalline Si and SiC. The introduction of the C buffer layer of the present invention provides a different interface bonding mode between the single-crystalline Si substrate and the SiC coating, which has better adaptability.

[0021] The present invention adopts the chemical vapor deposition method and uses low-cost environmentally friendly raw materials to successfully deposit a densely structured and well-bonded C buffer layer and SiC protective coating on the surface of single-crystal Si, thereby solving the demand for longer service life of silicon-based components in etching environments.

[0022] Furthermore, before depositing the C buffer layer and SiC protective coating on the single-crystalline Si substrate, the present invention introduces hydrogen into the reaction chamber to etch the single-crystalline Si. This process removes the oxide layer and contaminants from the surface of the single-crystalline Si substrate, cleaning the substrate surface while increasing surface active sites to promote precursor adsorption and surface reactions. Furthermore, the process parameters for hydrogen etching of the single-crystalline Si are specified (e.g., a hydrogen flow rate of 10-1000 sccm and an etching time of 1-10 minutes). These details play a significant role in improving coating quality, adhesion, and other properties.

[0023] Furthermore, the present invention significantly improves the coating density and interface bonding strength through the coordinated control of hydrogen etching pretreatment, specific deposition temperature of 1000℃~1250℃ and working pressure of 100Pa~1000Pa, which is superior to the performance of single-layer SiC coating in the prior art.

[0024] The advantages and beneficial effects of the present invention are:

[0025] 1. The raw materials used in the present invention are HMDSO and n-Hexane, which are inexpensive and non-toxic. The reaction by-products are non-toxic and non-corrosive, avoiding the corrosive tail gas problem of chlorine-containing raw materials and conforming to the trend of green manufacturing.

[0026] 2. This invention proposes for the first time a process for the integrated deposition of a C buffer layer and a SiC protective coating on a single-crystal Si substrate by CVD. This process, combined with a graphite rod as an auxiliary carbon source, optimizes interfacial bonding and solves the inefficiency problem caused by step-by-step deposition in traditional processes. The C buffer layer introduced in this invention can effectively improve the interfacial bonding between Si and SiC, and can achieve integrated deposition of the C buffer layer and SiC coating, greatly improving production efficiency. The prepared C buffer layer and SiC protective coating have a dense structure and are well bonded to the single-crystal Si substrate, providing excellent corrosion protection for the single-crystal Si substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is the surface morphology of the SiC protective coating prepared on the single crystal Si surface using the chemical vapor deposition process using the HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1150°C.

[0028] Figure 2 This is a cross-sectional view of a C buffer layer and SiC protective coating prepared on a single crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1150°C.

[0029] Figure 3 This is a grazing-incidence X-ray diffraction (GIXRD) pattern of a SiC protective coating deposited on a single-crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar system at a deposition temperature of 1150°C. In the figure, the abscissa (2Theta) represents the diffraction angle (°), and the ordinate (Intensity) represents the relative intensity (au).

[0030] Figure 4 This is a cross-sectional X-ray energy spectrum (EDS) diagram of a C buffer layer and SiC protective coating prepared on a single crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1150°C.

[0031] Figure 5 This is the surface morphology of the SiC protective coating prepared on the single crystal Si surface using the chemical vapor deposition process using the HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1100°C.

[0032] Figure 6This is a cross-sectional view of a C buffer layer and SiC protective coating prepared on a single crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1100°C.

[0033] Figure 7 This is a GIXRD pattern of a SiC protective coating deposited on a single-crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar system at 1100°C. In the figure, the abscissa, 2Theta, represents the diffraction angle (°), and the ordinate, Intensity, represents the relative intensity (au).

[0034] Figure 8 This is a cross-sectional EDS image of a C buffer layer and SiC protective coating prepared on a single crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1100°C.

[0035] Figure 9 This is the surface morphology of the SiC protective coating prepared on the single crystal Si surface using the chemical vapor deposition process using the HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1200°C.

[0036] Figure 10 This is a cross-sectional view of a C buffer layer and SiC protective coating prepared on a single crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1200°C.

[0037] Figure 11 This is a GIXRD pattern of a SiC protective coating deposited on a single-crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar system at 1200°C. In the figure, the abscissa, 2Theta, represents the diffraction angle (°), and the ordinate, Intensity, represents the relative intensity (au).

[0038] Figure 12 This is a cross-sectional EDS image of a C buffer layer and SiC protective coating prepared on a single crystal Si surface using a chemical vapor deposition process using an HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1200°C. DETAILED DESCRIPTION

[0039] In the specific implementation process, the present invention proposes a chemical vapor deposition method for integrated preparation of a C buffer layer and a SiC protective coating on a single crystal Si substrate. A thermally excited chemical vapor deposition system is adopted, an HMDSO / n-Hexane-H2-Ar system is selected, and the ratio of the raw materials HMDSO and n-Hexane is controlled. The gas system introduced into the reaction chamber is selected as an HMDSO / n-Hexane-H2-Ar system. A thermally excited chemical vapor deposition system is adopted, and the HMDSO / n-Hexane system is selected as the raw material and its ratio is controlled. A graphite rod is placed in the reaction chamber as an auxiliary carbon source. When the working pressure is 100Pa~1000Pa and the working temperature is 1000℃~1250℃, a densely structured C buffer layer and SiC protective coating are integrated and deposited on the surface of the single crystal Si substrate.

[0040] The following further describes the specific embodiments of the present invention. It should be noted that the description of these embodiments is intended to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0041] The experimental methods in the following examples are conventional methods unless otherwise specified. The experimental materials used in the following examples are commercially available unless otherwise specified.

[0042] Example 1 (deposition temperature 1150°C):

[0043] In this embodiment, a chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate is as follows:

[0044] (1) HMDSO and n-Hexane were mixed in a certain volume ratio of 2:1, and then stirred thoroughly to prepare the C buffer layer and SiC protective coating.

[0045] (2) Before depositing the C buffer layer and SiC protective coating on the single crystal Si substrate, hydrogen gas was introduced into the reaction chamber to etch the single crystal Si. The hydrogen flow rate was 600 sccm and the etching time was 1 min.

[0046] (3) When depositing a C buffer layer and SiC protective coating on a single-crystal Si substrate, the flow rate of the liquid raw material mixed with HMDSO and n-Hexane was 1g / min, a graphite rod was placed around the single-crystal Si substrate, the argon flow rate was 3000sccm, the hydrogen flow rate was 600sccm, the deposition temperature was 1150℃, the working pressure was 600Pa, and the deposition time was 2h. After the deposition was completed, the furnace was cooled to room temperature. The thickness of the C buffer layer deposited on the single-crystal Si substrate was 10μm, and the thickness of the SiC protective coating was 40μm.

[0047] (4) The C buffer layer and SiC protective coating deposited on the surface of the single-crystal Si substrate have a dense structure, strong corrosion resistance, and good bonding with the single-crystal Si substrate, which can provide excellent etching protection for the single-crystal Si substrate.

[0048] Example 2 (deposition temperature 1100°C):

[0049] In this embodiment, a chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate is as follows:

[0050] (1) HMDSO and n-Hexane were mixed in a certain volume ratio of 2:1, and then stirred thoroughly to prepare the C buffer layer and SiC protective coating.

[0051] (2) Before depositing the C buffer layer and SiC protective coating on the single crystal Si substrate, hydrogen gas was introduced into the reaction chamber to etch the single crystal Si. The hydrogen flow rate was 600 sccm and the etching time was 1 min.

[0052] (3) When depositing a C buffer layer and SiC protective coating on a single-crystal Si substrate, the flow rate of the liquid raw material mixed with HMDSO and n-Hexane was 1g / min, a graphite rod was placed around the single-crystal Si substrate, the argon flow rate was 3000sccm, the hydrogen flow rate was 600sccm, the deposition temperature was 1100℃, the working pressure was 600Pa, and the deposition time was 2h. After the deposition was completed, the furnace was cooled to room temperature. The thickness of the C buffer layer deposited on the single-crystal Si substrate was 4μm, and the thickness of the SiC protective coating was 11μm.

[0053] (4) The C buffer layer and SiC protective coating deposited on the surface of the single-crystal Si substrate have a dense structure, strong corrosion resistance, and good bonding with the single-crystal Si substrate, which can provide excellent etching protection for the single-crystal Si substrate.

[0054] Example 3 (deposition temperature 1200°C):

[0055] In this embodiment, a chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate is as follows:

[0056] (1) HMDSO and n-Hexane were mixed in a certain volume ratio of 2:1, and then stirred thoroughly to prepare the C buffer layer and SiC protective coating.

[0057] (2) Before depositing the C buffer layer and SiC protective coating on the single crystal Si substrate, hydrogen gas was introduced into the reaction chamber to etch the single crystal Si. The hydrogen flow rate was 600 sccm and the etching time was 1 min.

[0058] (3) When depositing a C buffer layer and SiC protective coating on a single-crystal Si substrate, the flow rate of the liquid raw material mixed with HMDSO and n-Hexane was 1 g / min, a graphite rod was placed around the single-crystal Si substrate, the argon flow rate was 3000 sccm, the hydrogen flow rate was 600 sccm, the deposition temperature was 1200°C, the working pressure was 600 Pa, and the deposition time was 2 h. After the deposition was completed, the furnace was cooled to room temperature. The thickness of the SiC protective coating deposited on the single-crystal Si substrate was 120 μm.

[0059] (4) The SiC protective coating deposited on the surface of the single-crystal Si substrate has a dense structure and strong corrosion resistance, but there are many holes at the interface with the single-crystal Si substrate, which can provide a certain etching protection for the single-crystal Si substrate.

[0060] like Figure 1 As shown in Example 1, the surface morphology of the SiC protective coating prepared on the single crystal Si surface by chemical vapor deposition process using HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1150°C is shown. Figure 1 It can be seen that the surface roughness of the prepared SiC protective coating is very small and the arrangement is dense, with almost no defects such as holes and cracks.

[0061] like Figure 2 As shown in Example 1, a cross-sectional view of a C buffer layer and a SiC protective coating prepared on a single crystal Si surface at a deposition temperature of 1150° C. using a chemical vapor deposition process using a HMDSO / n-Hexane-H2-Ar raw material system is shown. Figure 2 It can be seen that the prepared C buffer layer and SiC protective coating have dense structures, good interface bonding, and almost no defects such as holes and cracks.

[0062] like Figure 3 As shown in Example 1, the GIXRD patterns of the C buffer layer and SiC protective coating prepared on the single crystal Si surface by chemical vapor deposition process using HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1150°C are shown. Figure 3It can be seen that the diffraction peaks appearing in the figure are all diffraction peaks of 3C-SiC, and the (111) plane is the preferred orientation.

[0063] like Figure 4 As shown in the cross-sectional EDS diagram of the C buffer layer and SiC protective coating prepared on the single crystal Si surface by chemical vapor deposition process using HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1150°C in Example 1, Figure 4 It can be seen that the thickness of the prepared C buffer layer is 10 μm and the thickness of the SiC coating is 40 μm.

[0064] like Figure 5 As shown in Example 2, the surface morphology of the SiC protective coating prepared on the single crystal Si surface by chemical vapor deposition process using HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1100°C is shown. Figure 5 It can be seen that the surface roughness of the prepared SiC protective coating is very small and the arrangement is dense, with almost no defects such as holes and cracks.

[0065] like Figure 6 As shown, in Example 2, a cross-sectional view of a C buffer layer and a SiC protective coating are prepared on a single crystal Si surface using a chemical vapor deposition process using a HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1100°C. Figure 6 It can be seen that the prepared C buffer layer and SiC protective coating have dense structures, good interface bonding, and almost no defects such as holes and cracks.

[0066] like Figure 7 As shown in Example 2, the GIXRD patterns of the C buffer layer and SiC protective coating prepared on the single crystal Si surface by chemical vapor deposition process using HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1100°C are shown. Figure 7 It can be seen that there is no obvious diffraction peak in the figure, which indicates that the SiC protective coating is amorphous.

[0067] like Figure 8 As shown in the cross-sectional EDS diagram of Example 2, a C buffer layer and a SiC protective coating were prepared on a single crystal Si surface using a chemical vapor deposition process using a HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1100°C. Figure 8 It can be seen that the thickness of the prepared C buffer layer is 4 μm and the thickness of the SiC coating is 11 μm.

[0068] like Figure 9As shown in Example 3, the surface morphology of the SiC protective coating prepared on the single crystal Si surface by chemical vapor deposition process using HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1200°C is shown. Figure 9 It can be seen that the surface roughness of the prepared SiC protective coating is very small and the arrangement is dense, with almost no defects such as holes and cracks.

[0069] like Figure 10 As shown in Example 3, a cross-sectional view of a SiC protective coating prepared on a single crystal Si surface using a chemical vapor deposition process using a HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1200°C is shown. Figure 10 It can be seen that the prepared SiC protective coating has a dense structure, but there are many holes at the interface between it and the single crystal Si substrate.

[0070] like Figure 11 As shown in Example 3, the GIXRD pattern of the SiC protective coating prepared on the single crystal Si surface by chemical vapor deposition process using HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1200°C is shown. Figure 11 It can be seen that the diffraction peaks appearing in the figure are all diffraction peaks of 3C-SiC, and the (111) plane is the preferred orientation.

[0071] like Figure 12 As shown in the cross-sectional EDS diagram of Example 3, a C buffer layer and a SiC protective coating were prepared on a single crystal Si surface using a chemical vapor deposition process using a HMDSO / n-Hexane-H2-Ar raw material system at a deposition temperature of 1200°C. Figure 12 It can be seen that the thickness of the prepared SiC coating is 120 μm.

[0072] The results of the embodiment show that the present invention adopts a chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate. The C buffer layer and SiC protective coating prepared on the single crystal Si have strong corrosion resistance, a dense structure, and are well bonded to the single crystal Si substrate, and can provide excellent anti-etching effect on the single crystal Si substrate.

Claims

1. A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate, characterized in that: Chemical vapor deposition technology is used, with hexamethyldisiloxane HMDSO / n-hexane n-Hexane as raw materials, graphite rods as auxiliary carbon sources, and the gas system introduced into the reaction chamber is selected from the HMDSO / n-Hexane-H2-Ar system, including the following steps: (1) HMDSO and n-Hexane are mixed in a volume ratio of 1-5:1-5, stirred evenly and used as a liquid raw material for preparing a C buffer layer and a SiC protective coating; (2) Before depositing the C buffer layer and SiC protective coating on the single crystal Si substrate, hydrogen is introduced into the reaction chamber to etch the single crystal Si. The hydrogen flow rate is 10-1000 sccm and the etching time is 1-10 min. The oxide layer and pollutants on the surface of the single crystal Si substrate are removed, the substrate surface is cleaned, and the surface active sites are increased to promote the adsorption and surface reaction of the precursor. (3) When depositing the C buffer layer and SiC protective coating on the single crystal Si substrate, a graphite rod is placed around the single crystal Si substrate, the flow rate of the liquid raw material mixed with HMDSO and n-Hexane is 0.1~10g / min, the argon flow rate is 50~10000sccm, the hydrogen flow rate is 10~1000sccm, the deposition temperature is 1000℃~1150℃, the working pressure is 500Pa~1000Pa, the deposition time is 1~5h, and the furnace is cooled after the deposition is completed. A dense C buffer layer and SiC protective coating are deposited on the surface of the single crystal Si substrate in an integrated manner.

2. A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate according to claim 1, characterized in that: In step (1), HMDSO and n-Hexane are mixed in a volume ratio of 2:1, and the liquid raw material of the mixture of HMDSO and n-Hexane is fully stirred before use.

3. A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate according to claim 1, characterized in that: In step (2), the hydrogen flow rate is 600 sccm and the etching time is 1 min.

4. A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate according to claim 1, characterized in that: In step (3), the flow rate of the liquid raw material mixed with HMDSO and n-Hexane is 1 g / min.

5. The chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate according to claim 1, characterized in that: In step (3), the argon flow rate is 3000 sccm and the hydrogen flow rate is 600 sccm.

6. A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate according to claim 1, characterized in that: In step (3), the deposition temperature is 1150°C, the working pressure is 600 Pa, and the deposition time is 2 h.

7. A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate according to claim 1, characterized in that: The thickness of the C buffer layer and the SiC corrosion-resistant protective layer deposited integrally on the single crystal Si substrate is 10 μm to 5 mm.

8. A chemical vapor deposition method for integrally preparing a C buffer layer and a SiC protective coating on a single crystal Si substrate according to claim 7, characterized in that: The thickness of the C buffer layer is 1 μm to 50 μm, and the thickness of the SiC corrosion-resistant protective layer is 10 μm to 200 μm.

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