Chemical Vapor Deposition Equipment

Abstract

This application relates to a chemical vapor deposition device, which relates to the technical field of semiconductor preparation. The chemical vapor deposition device includes a first gas inlet, a gas distribution structure, a gas inlet structure, and a carrier table. The gas distribution structure includes a bottom wall and a side wall. A plurality of through holes are provided on the bottom wall, and a first heating part surrounding the bottom wall is provided in the side wall; the gas inlet structure is arranged in the space formed by enclosing the bottom wall and the side wall. A gas channel connecting the first gas inlet and each through hole is provided in the gas inlet structure, and a second heating part surrounding the gas channel is provided in the gas inlet structure. By providing the first heating part in the side wall of the gas distribution structure and the second heating part in the gas inlet structure, the temperature distribution in the chemical vapor deposition device can be controlled by using the first heating part and the second heating part, so as to control the free molecular collision frequency of the reaction gas in different regions by adjusting the temperature, improve the uniformity of the film layer thickness, and facilitate the implementation of subsequent processes and improve the product yield.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor manufacturing, and specifically to a chemical vapor deposition device. Background Art

[0002] As a key technology in the semiconductor manufacturing process, the chemical vapor deposition process can use the reaction of gases on the wafer to generate a film layer with specific materials and functions to meet the performance requirements of semiconductor devices. The uniformity of the film layer thickness is an important indicator for measuring the growth quality of the film layer, and it has a significant impact on device performance, complex structure requirements, and mass production. Summary of the Invention

[0003] To overcome the problems existing in the related art, this application provides a chemical vapor deposition device.

[0004] According to some embodiments of this application, a chemical vapor deposition device is provided. The chemical vapor deposition device includes:

[0005] A first gas inlet;

[0006] A gas distribution structure, the gas distribution structure includes a bottom wall and a side wall disposed around the bottom wall. A plurality of through holes are provided on the bottom wall, and a first heating part surrounding the bottom wall is provided in the side wall;

[0007] An air intake structure, the air intake structure is disposed in the space formed by the enclosure of the bottom wall and the side wall. A gas passage communicating the first gas inlet and each of the through holes is provided in the air intake structure, and a second heating part surrounding the gas passage is provided in the air intake structure;

[0008] A carrier stage for carrying a wafer, and each of the through holes faces the carrier stage.

[0009] In some embodiments of this application, the first heating part includes at least one first sub-heating part embedded in the side wall, and each first sub-heating part includes a first heating coil surrounding the bottom wall; alternatively, each first sub-heating part includes at least two groups of first heating units, and each group of first heating units includes at least two first arc-shaped heating wires. Along the circumferential direction of the gas distribution structure, the first arc-shaped heating wires of different groups of first heating units are arranged at intervals and cross each other.

[0010] In some embodiments of this application, a plurality of the first sub-heating parts are provided, and the plurality of first sub-heating parts are arranged at intervals along the axial direction of the gas distribution structure.

[0011] In some embodiments of this application, the second heating part includes a plurality of second sub-heating parts embedded in the air intake structure, and the plurality of second sub-heating parts are arranged along the radial direction of the air intake structure.

[0012] In some embodiments of the present application, each of the second sub-heating parts includes at least one second heating coil surrounding the gas passage; alternatively, each of the second sub-heating parts includes at least two groups of second heating units, and each group of the second heating units includes at least two second arc-shaped heating wires. Along the circumferential direction of the air inlet structure, the second arc-shaped heating wires of different groups of second heating units are arranged at intervals and crosswise.

[0013] In some embodiments of the present application, at least one of the second sub-heating parts includes a plurality of the second heating coils, and the plurality of the second heating coils in the same second sub-heating part are arranged at intervals along the axial direction of the air inlet structure.

[0014] In some embodiments of the present application, the gas passage includes an equal-diameter section and a variable-diameter section. One end of the equal-diameter section is connected to the first air inlet, and the other end of the equal-diameter section is connected to one end of the variable-diameter section. The diameter of the variable-diameter section gradually increases from the equal-diameter section towards the bottom wall, and there is a preset interval distance between the air inlet structure and the bottom wall.

[0015] In some embodiments of the present application, the bottom wall includes a first distribution part and a second distribution part arranged in sequence from the center to the edge of the bottom wall. Among them, in the direction from the center to the edge of the bottom wall, the length of the first distribution part is less than the length of the second distribution part, the lengths of the air passing holes in the first distribution part are the same, and the lengths of the air passing holes in the second distribution part gradually decrease; or,

[0016] The bottom wall includes a first distribution part, a second distribution part, and a third distribution part arranged in sequence from the center to the edge of the bottom wall. Among them, in the direction from the center to the edge of the bottom wall, the length of the first distribution part is less than the length of the second distribution part, the lengths of the air passing holes in the first distribution part are the same, the lengths of the air passing holes in the third distribution part are the same, the lengths of the air passing holes in the first distribution part are greater than the lengths of the air passing holes in the third distribution part, and the lengths of the air passing holes in the second distribution part gradually decrease.

[0017] In some embodiments of the present application, the top surface of the first distribution part is located between the top end and the bottom end of the variable-diameter section; or,

[0018] The top surface of the first distribution part and at least part of the top surface of the second distribution part are located between the top end and the bottom end of the variable-diameter section.

[0019] In some embodiments of the present application, the first distribution part is disposed opposite to the equal-diameter section, and the diameter of the first distribution part is smaller than the diameter of the equal-diameter section; and / or,

[0020] The surface of the second distribution part close to the intake structure is parallel to the surface of the intake structure close to the gas distribution structure.

[0021] In some embodiments of the present application, the bottom wall includes the first distribution part, the second distribution part, and the third distribution part. There is a first vertical distance between the top surface of the first distribution part and the bottom end of the equal-diameter section, a second vertical distance between the top surface of the second distribution part and the pore wall of the variable-diameter section, and a third vertical distance between the top surface of the third distribution part and the pore wall of the variable-diameter section.

[0022] Wherein, the second vertical distance is greater than the first vertical distance, and the second vertical distance is greater than the third vertical distance.

[0023] The technical solutions provided by the embodiments of the present application may include the following beneficial effects: By arranging the first heating part in the side wall of the gas distribution structure and the second heating part in the intake structure, the temperature of the reaction gas entering the gas channel is increased, and the temperature difference when the reaction gas enters the chemical vapor deposition equipment and when the gas reaction occurs is reduced, so that the reaction gas always maintains a high free molecular expansion frequency during the transportation process in the chemical vapor deposition equipment, thereby improving the uniformity of the film layer thickness, and the temperature distribution in the chemical vapor deposition equipment can be controlled by using the first heating part and the second heating part. Thus, the free molecular collision frequency of the reaction gas in different regions can be controlled by adjusting the temperature, the uniformity of the film layer thickness is improved, which is beneficial to performing subsequent processes and improving the product yield.

[0024] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. Description of the Drawings

[0025] The drawings here are incorporated into the specification and form a part of this specification, showing embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application.

[0026] Figure 1 It is a schematic diagram of the film layer thickness.

[0027] Figure 2 It is a schematic diagram of a chemical vapor deposition equipment shown according to an exemplary embodiment.

[0028] Figure 3 It is a schematic diagram of the film layer thickness shown according to an exemplary embodiment.

[0029] Figure 4 It is a schematic diagram of the first sub-heating part shown according to an exemplary embodiment.

[0030] Figure 5It is a schematic diagram of a second heating part shown according to an exemplary embodiment.

[0031] Figure 6 It is a schematic diagram of a second sub - heating part shown according to an exemplary embodiment.

[0032] Figure 7 It is a schematic diagram of a gas channel and a bottom wall shown according to an exemplary embodiment.

[0033] Figure 8 It is a schematic diagram of a gas channel and a bottom wall shown according to another exemplary embodiment.

[0034] Figure 9 It is a schematic diagram of a gas channel.

[0035] Figure 10 It is a schematic diagram of a gas channel and a bottom wall shown according to another exemplary embodiment.

[0036] Figure 11 It is a schematic diagram of a bottom wall shown according to an exemplary embodiment.

[0037] Figure 12 It is a schematic diagram of a gas channel and a bottom wall shown according to another exemplary embodiment.

[0038] Figure 13 It is a schematic diagram of a bottom wall shown according to another exemplary embodiment.

[0039] Figure 14 It is a schematic diagram of a third heating part shown according to an exemplary embodiment.

[0040] In the figure:

[0041] 10 - First air inlet; 20 - Gas distribution structure; 21 - Bottom wall; 22 - Side wall; 23 - Air passing hole; 24 - First distribution part; 25 - Second distribution part; 26 - Third distribution part; 30 - First heating part; 31 - First sub - heating part; 32 - First heating unit; 33 - First arc - shaped heating wire; 40 - Air intake structure; 41 - Gas channel; 42 - Equal - diameter section; 43 - Variable - diameter section; 50 - Second heating part; 51 - Second sub - heating part; 52 - Second heating unit; 53 - Second arc - shaped heating wire; 60 - Carrying platform; 70 - Third heating part; 71 - Third sub - heating part: 80 - Second air inlet; 81 - Conical speed - adjusting structure; 90 - Air outlet; 100 - Outer shell. Detailed implementation mode

[0042] Exemplary embodiments will be described in detail herein, and examples thereof are shown in the accompanying drawings. When the following description refers to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application.

[0043] In related technologies, for example, gas-phase deposition processes such as Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) are key technologies in the semiconductor manufacturing process. They can use the reaction of gases on the wafer to generate film layers of specific materials and functions such as oxide films to meet the structural and performance requirements of semiconductor devices.

[0044] For a semiconductor structure, the uniformity of the film layer thickness formed by gas-phase deposition is an important indicator for measuring the film layer growth quality. It determines the precision of processes such as Double Patterning and Pitch Doubling for the size reduction of Dynamic Random Access Memory (DRAM), and has a significant impact on device performance, complex structure requirements, and mass production.

[0045] During gas-phase deposition, the free molecular collision frequency of reaction gases such as precursors and reactants determines the adsorption of the reaction gases on the wafer, thereby determining the growth rate of the film layer, making it the main factor affecting the film layer thickness uniformity. However, when using the gas-phase deposition equipment of related technologies for gas-phase deposition, due to the limitation of the structure of the gas-phase deposition equipment, the reaction gases have different temperatures, transmission paths, and concentrations in different regions between the gas inlet and the wafer, resulting in different free molecular collision frequencies for the reaction gases in different regions. As Figure 1 shown, when the free molecular collision frequency of the reaction gases in the central region of the wafer is lower than that of the reaction gases in the edge region, the probability and rate of free movement of gas molecules above the central region of the wafer are lower, making the reaction gases on the central region of the wafer easily react with the wafer and adsorb on the wafer. The probability and rate of free movement of gas molecules above the edge region of the wafer are higher, making the reaction gases on the edge region of the wafer not easily react with the wafer and adsorb on the wafer. As a result, the film layer thickness in the central region of the wafer is thicker, and the film layer thickness in the edge region is thinner, and the difference between the two can reach 0.5 nm, resulting in poor uniformity of the formed film layer thickness, seriously affecting the precision of subsequent processes and the product yield.

[0046] Based on this, an exemplary embodiment of the present application provides a chemical vapor deposition apparatus. By providing a first heating part in the side wall of the gas distribution structure and a second heating part in the intake structure body, the temperature of the reaction gas entering the gas channel is increased, and the temperature difference when the reaction gas enters the chemical vapor deposition apparatus and when the gas reaction occurs is reduced. This enables the reaction gas to maintain a relatively high free molecular expansion frequency during the transportation process within the chemical vapor deposition apparatus, thereby improving the uniformity of the film thickness. Moreover, the temperature distribution in the chemical vapor deposition apparatus can be controlled by using the first heating part and the second heating part. Thus, by adjusting the temperature, the free molecular collision frequency of the reaction gas in different regions can be controlled, enhancing the uniformity of the film thickness, facilitating the execution of subsequent processes, and improving the product yield.

[0047] In an exemplary embodiment, a chemical vapor deposition apparatus is provided for forming a film layer on a wafer through a chemical vapor deposition process. Referring to Figure 2 as shown, the chemical vapor deposition apparatus includes a first gas inlet 10, a gas distribution structure 20, an intake structure body 40, and a carrier stage 60. The first gas inlet 10 is used for introducing a reaction gas. For example, the chemical vapor deposition apparatus includes a housing 100, and the gas distribution structure 20, the intake structure body 40, and the carrier stage 60 are disposed within the housing 100, and the first gas inlet 10 is disposed on the housing 100. The first gas inlet 10 is used for introducing a matching reaction gas for the chemical vapor deposition process. For an atomic layer deposition process, the reaction gas includes a precursor and a reactant. The precursor used in the atomic layer deposition process may include, for example, bis(diethylamino)silane, i.e., SAM-24.

[0048] The gas distribution structure 20 includes a bottom wall 21 and a side wall 22 surrounding the bottom wall 21. A plurality of through holes 23 are provided on the bottom wall 21 of the gas distribution structure 20 for uniformly distributing the reaction gas to the surface of the wafer. The side wall 22 of the gas distribution structure 20 is fixedly connected to the housing 100 of the chemical vapor deposition apparatus to fix and support the bottom wall 21. To match the shape of the wafer, the outer edge of the projection of the bottom wall 21 on the horizontal plane, i.e., the XOZ plane, and the inner and outer edges of the projection of the side wall 22 on the horizontal plane may be circular, for example.

[0049] A first heating part 30 surrounding the bottom wall 21 is provided in the side wall 22 of the gas distribution structure 20. The first heating part 30 is used for heating the reaction gas to provide a suitable reaction temperature for the reaction gas. Exemplarily, the first heating part 30 may be a heating coil or heating wire embedded in the side wall 22, for example. The first heating part 30 is connected to the controller of the chemical vapor deposition apparatus, and the controller can adjust the heating temperature of the first heating part 30 in an automatic control or user manual control manner.

[0050] The intake structure 40 is disposed in the space enclosed by the bottom wall 21 and the side wall 22, and is located between the first intake port 10 and the gas distribution structure 20. The intake structure 40 can be fixedly connected to the housing 100 of the chemical vapor deposition equipment or the side wall 22 of the gas distribution structure 20, for example. A gas passage 41 is provided in the intake structure 40, which penetrates the intake structure 40 and connects the first intake port 10 and each through-hole 23, so that the reaction gas can be transported from the first intake port 10 to each through-hole 23 through the gas passage 41.

[0051] A second heating part 50 surrounding the gas passage 41 is provided in the intake structure 40. The second heating part 50 is used to heat the reaction gas, so as to provide a suitable reaction temperature for the reaction gas. Exemplarily, the second heating part 50 can be a heating coil or a heating wire embedded in the intake structure 40. The second heating part 50 is connected to the controller of the chemical vapor deposition equipment, and the controller can adjust the heating temperature of the second heating part 50 by means of automatic control or user manual control.

[0052] The carrier 60 is disposed on the side of the gas distribution structure 20 away from the intake structure 40. The carrier 60 is used to carry the wafer. Each through-hole 23 on the gas distribution structure 20 faces the carrier 60, so that the reaction gas can be evenly distributed on the surface of the wafer after passing through the gas distribution structure 20. The carrier 60 can move in the height direction, i.e., the Y direction, so that it can receive the wafer transported from the outside at a lower receiving position and move to a higher reaction position to keep the distance between the wafer and the through-hole 23 within a suitable range.

[0053] It can be understood that since the first heating part 30 and the second heating part 50 are respectively provided in the side wall 22 and the intake structure 40, the temperature of the reaction gas can be controlled by controlling the heating temperatures of the first heating part 30 and the second heating part 50. And since the first heating part 30 and the second heating part 50 correspond to different positions in the horizontal direction, i.e., the X direction, a good temperature control effect can be achieved on the reaction gas in each region in the horizontal direction, making the temperature distribution in the chemical vapor deposition equipment targeted. The free molecular collision frequency of the reaction gas is positively correlated with the temperature of the reaction gas. By controlling the temperature distribution in the chemical vapor deposition equipment, the free molecular collision frequency of the reaction gas in different regions can be adjusted from the dimension of temperature. Figure 3 It is a schematic diagram of the thickness of the film layer fabricated by using the chemical vapor deposition equipment provided in this embodiment, as Figure 3 shown. By using the chemical vapor deposition equipment provided in this embodiment, by heating the reaction gas and controlling the temperature distribution to adjust the free molecular collision frequency of the reaction gas in different regions, the thickness difference between the film layer in the central region of the wafer and the film layer in the edge region of the wafer can be greatly reduced. Refer to Figure 3, the thickness at each position from the central region to the edge region of the wafer is substantially the same, there is no obvious thickness difference region, and the maximum thickness difference can be reduced to only 40% of the related technology, effectively improving the uniformity of the film layer thickness.

[0054] Exemplarily, if the film layer has a larger thickness in the central region of the wafer and a smaller thickness in the edge region, the first heating part 30 and the second heating part 50 can be used to increase the free molecular collision frequency of the reaction gas in the central region of the wafer by temperature control to reduce the adsorption of the reaction gas in the central region, that is, reduce the deposition rate of the reaction gas on the central region of the wafer, thereby reducing the thickness difference between the central region and the edge region of the film layer. If the film layer has a smaller thickness in the central region of the wafer and a larger thickness in the edge region, the first heating part 30 and the second heating part 50 can be used to reduce the free molecular collision frequency of the reaction gas in the central region of the wafer by temperature control to increase the adsorption of the reaction gas in the central region, thereby reducing the thickness difference between the central region and the edge region of the film layer.

[0055] In this embodiment, by providing the first gas inlet 10, the gas distribution structure 20 and the gas inlet structure 40, the reaction gas can be distributed to the wafer on the carrier 60 through the gas passage 41 provided in the first gas inlet 10 and the gas inlet structure 40 and the through holes 23 in the gas distribution structure 20, so that the vapor deposition device can realize the growth of the film layer. By providing the first heating part 30 in the side wall 22 of the gas distribution structure 20 and the second heating part 50 in the gas inlet structure 40, the temperature distribution in the vapor deposition device can be controlled by using the first heating part 30 and the second heating part 50, thereby controlling the free molecular collision frequency of the reaction gas in different regions by adjusting the temperature, and further promoting the deposition rate of the reaction gas to be uniform over the entire region of the wafer, improving the uniformity of the film layer thickness, which is beneficial to performing subsequent processes and improving the product yield.

[0056] In some embodiments, referring to Figure 2 and Figure 4 as shown, the first heating part 30 includes at least one first sub-heating part 31 embedded in the side wall 22, and each first sub-heating part 31 includes a first heating coil surrounding the bottom wall 21, or each first sub-heating part 31 includes at least two groups of first heating units 32, and each group of first heating units 32 includes at least two first arc heating wires 33. Along the circumferential direction of the gas distribution structure 20, the first arc heating wires 33 of different groups of first heating units 32 are arranged at intervals and crosswise.

[0057] In some embodiments, the first heating part 30 includes one or more first sub-heating parts 31 embedded in the side wall 22. Each first sub-heating part 31 may include a first heating coil surrounding the bottom wall 21, so as to achieve the heating effect of the first sub-heating part 31 by means of the heating coil, and ensure the heating uniformity of each first sub-heating part 31 in the circumferential direction of the side wall 22 through the centrosymmetric structure of the heating coil.

[0058] In other embodiments, each first sub-heating part 31 includes at least two groups of first heating units 32. Each group of first heating units 32 includes at least two first arc heating wires 33, and the first arc heating wires 33 of different groups of first heating units 32 are arranged at intervals and crosswise in the circumferential direction of the gas distribution structure 20. When the first sub-heating part 31 works, any one or more of the first heating units 32 can be selected to be turned on, so as to achieve the heating effect of the first sub-heating part 31 by means of the arc heating wires, and ensure the heating uniformity of each first sub-heating part 31 in the circumferential direction of the side wall 22 through the arrangement of each arc heating wire.

[0059] Exemplarily, as Figure 4 shown, the first sub-heating part 31 includes three groups of first heating units 32, namely the first heating unit 32-A, the first heating unit 32-B and the first heating unit 32-C. The first heating unit 32-A, the first heating unit 32-B and the first heating unit 32-C respectively include two oppositely arranged first arc heating wires 33, namely the first arc heating wire 33-D and the first arc heating wire 33-E. When the first sub-heating part 31 works, any one of the three first heating units 32, any combination of any two of them or all three of them can be selected to be turned on.

[0060] In this embodiment, at least one first sub-heating part 31 embedded in the side wall 22 is used as the first heating part 30, and the first sub-heating part 31 is configured as a first heating coil surrounding the bottom wall 21 or at least two groups of first heating units 32, which can achieve the heating effect of the first sub-heating part 31 by means of the heating coil or the arc heating wire, and ensure the heating uniformity of each first sub-heating part 31 in the circumferential direction of the side wall 22 through the structure of the first heating coil or the arrangement of the first arc heating wires 33, further improving the control accuracy of the temperature distribution in the chemical vapor deposition equipment, facilitating the control of the free molecular collision frequency of the reaction gas in different regions, and being beneficial to improving the uniformity of the film layer thickness.

[0061] In some embodiments, a plurality of first sub-heating parts 31 are provided, and the plurality of first sub-heating parts 31 are arranged at intervals along the axial direction of the gas distribution structure 20.

[0062] As described above, the first heating part 30 includes at least one first sub-heating part 31, such as Figure 2As shown, when there are multiple first sub-heating parts 31, the multiple first sub-heating parts 31 are arranged at intervals along the axial direction of the gas distribution structure 20, i.e., the Y direction, so that different first sub-heating parts 31 correspond to different positions in the axial direction of the gas distribution structure 20, and can achieve a good temperature control effect on the reaction gas in each area in this axial direction, making the temperature distribution of the vapor deposition equipment in the axial direction of the gas distribution structure 20 uniform. Exemplarily, three first sub-heating parts 31 are provided, and each first sub-heating part 31 is a first heating coil, and the interval distances between adjacent first sub-heating parts 31 are the same.

[0063] In this embodiment, when there are multiple first sub-heating parts 31, arranging the multiple first sub-heating parts 31 at intervals along the axial direction of the gas distribution structure 20 can ensure the heating uniformity of the first heating part 30 in the axial direction of the gas distribution structure 20, further improving the control accuracy of the temperature distribution in the vapor deposition equipment, facilitating the control of the free molecular collision frequency of the reaction gas in different areas, and being beneficial to improving the uniformity of the film layer thickness.

[0064] In some embodiments, referring to Figure 2 and Figure 5 As shown, the second heating part 50 includes multiple second sub-heating parts 51 embedded in the air inlet structure 40, and the multiple second sub-heating parts 51 are arranged along the radial direction of the air inlet structure 40.

[0065] The second heating part 50 includes multiple second sub-heating parts 51 embedded in the air inlet structure 40, and the multiple second sub-heating parts 51 are arranged along the radial direction of the air inlet structure 40, i.e., the X direction and the Z direction, so that different second sub-heating parts 51 correspond to different positions in the radial direction of the air inlet structure 40, and can achieve a good temperature control effect on the reaction gas in each area in this radial direction, facilitating the matching of the temperature distribution of the vapor deposition equipment in the radial direction of the air inlet structure 40 with the film layer thickness control requirements.

[0066] Exemplarily, as Figure 5As shown in the figure, the second heating unit 50 includes three second sub-heating units 51, namely, second sub-heating unit 51-A, second sub-heating unit 51-B, and second sub-heating unit 51-C. The second sub-heating unit 51-A, second sub-heating unit 51-B, and second sub-heating unit 51-C are arranged in sequence from the center to the edge in the radial direction of the intake structure 40. The widths of the heating areas corresponding to the second sub-heating unit 51-A, second sub-heating unit 51-B, and second sub-heating unit 51-C in the radial direction of the intake structure 40 are the same. When the thickness of the film layer in the central area of the wafer is greater than the thickness of the film layer in the edge area of the wafer, and it is necessary to use the second heating unit 50 to reduce the thickness difference between the central area and the edge area of the film layer on the wafer, the heating temperatures of the second sub-heating unit 51-A, second sub-heating unit 51-B, and second sub-heating unit 51-C can be set to 305 °C, 303 °C, and 300 °C respectively, so as to increase the free molecular collision frequency of the reaction gas in the central area of the wafer by increasing the temperature, thereby reducing the adsorption of the reaction gas on the central area of the wafer, that is, reducing the deposition rate of the reaction gas on the central area of the wafer.

[0067] In this embodiment, multiple second sub-heating units 51 embedded in the intake structure 40 are used as the second heating unit 50, and the multiple second sub-heating units 51 are arranged along the radial direction of the intake structure 40, which is convenient for controlling the temperature distribution in the radial direction of the intake structure 40 of the chemical vapor deposition equipment to match the film thickness control requirements, further improving the control accuracy of the temperature distribution in the chemical vapor deposition equipment, thereby controlling the free molecular collision frequency of the reaction gas in different regions, which is beneficial to improving the uniformity of the film thickness.

[0068] In some embodiments, referring to Figure 2 and Figure 6 As shown in the figure, each second sub-heating unit 51 includes at least one second heating coil surrounding the gas channel 41, or each second sub-heating unit 51 includes at least two groups of second heating units 52, and each group of second heating units 52 includes at least two second arc-shaped heating wires 53. Along the circumferential direction of the intake structure 40, the second arc-shaped heating wires 53 of different groups of second heating units 52 are arranged at intervals and crosswise.

[0069] Each second sub-heating unit 51 may include one or more second heating coils surrounding the gas channel 41, so as to achieve the heating effect of the second sub-heating unit 51 in the form of heating coils, and ensure the heating uniformity of each second sub-heating unit 51 in the circumferential direction of the intake structure 40 through the centrosymmetric structure of the heating coils.

[0070] Alternatively, each second sub-heating part 51 includes at least two groups of second heating units 52. Each group of second heating units 52 includes at least two second arc-shaped heating wires 53, and the second arc-shaped heating wires 53 of different groups of second heating units 52 are arranged at intervals and crosswise along the circumferential direction of the air intake structure 40. When the second sub-heating part 51 works, any one or more of the second heating units 52 can be selected to achieve the heating effect of the second sub-heating part 51 in the way of arc-shaped heating wires, and the heating uniformity of each second sub-heating part 51 in the circumferential direction of the air intake structure 40 is ensured by the arrangement of each arc-shaped heating wire.

[0071] Exemplarily, as Figure 6 shown, the second sub-heating part 51 includes three groups of second heating units 52, namely, second heating unit 52-A, second heating unit 52-B, and second heating unit 52-C. The second heating unit 52-A, the second heating unit 52-B, and the second heating unit 52-C respectively include two oppositely arranged second arc-shaped heating wires 53, namely, second arc-shaped heating wire 53-D and second arc-shaped heating wire 53-E. When the second sub-heating part 51 works, any one of the three second heating units 52, any combination of any two of them, or all three of them can be selected to be turned on.

[0072] In this embodiment, configuring the second sub-heating part 51 as a second heating coil or at least two groups of second heating units 52 surrounding the gas passage 41 can achieve the heating effect of the second sub-heating part 51 in the way of a heating coil or arc-shaped heating wires, and ensure the heating uniformity of each second sub-heating part 51 in the circumferential direction of the air intake structure 40 through the structure of the second heating coil or the arrangement of the second arc-shaped heating wires 53, further improving the control accuracy of the temperature distribution in the vapor deposition equipment, facilitating the control of the free molecular collision frequency of the reaction gas in different regions, and being beneficial to improving the uniformity of the film layer thickness.

[0073] In some embodiments, at least one second sub-heating part 51 includes a plurality of second heating coils, and the plurality of second heating coils in the same second sub-heating part 51 are arranged at intervals along the axial direction of the air intake structure 40.

[0074] As described above, the second heating part 50 includes at least one second sub-heating part 51, such as Figure 2As shown, when each second sub-heating unit 51 includes a plurality of second heating coils, the plurality of second heating coils in the same second sub-heating unit 51 are arranged at intervals along the axial direction of the intake structure 40, i.e., the Y direction, such that different second heating coils in the same second sub-heating unit 51 correspond to different positions in the axial direction of the intake structure 40, which can achieve a good temperature control effect on the reaction gas in each region in this axial direction, making the temperature distribution of the vapor deposition apparatus in the axial direction of the intake structure 40 uniform. Exemplarily, the second heating unit 50 includes three second sub-heating units 51 arranged radially along the intake structure 40, and each second sub-heating unit 51 includes two second heating coils arranged at intervals along the axial direction of the intake structure 40.

[0075] In this embodiment, when at least one second sub-heating unit 51 includes a plurality of second heating coils, arranging the plurality of second heating coils in the same second sub-heating unit 51 at intervals along the axial direction of the intake structure 40 can ensure the heating uniformity of the second heating unit 50 in the axial direction of the intake structure 40, further improving the control precision of the temperature distribution in the vapor deposition apparatus, facilitating the control of the free molecular collision frequency of the reaction gas in different regions, and being beneficial to improving the uniformity of the film layer thickness.

[0076] In some embodiments, referring to Figure 7 or Figure 8 As shown, the gas passage 41 includes an equal-diameter section 42 and a variable-diameter section 43. One end of the equal-diameter section 42 is connected to the first intake port 10, and the other end of the equal-diameter section 42 is connected to one end of the variable-diameter section 43. The diameter of the variable-diameter section 43 gradually increases from the equal-diameter section 42 towards the bottom wall 21, and there is a preset interval distance between the intake structure 40 and the bottom wall 21.

[0077] In one embodiment, as Figure 9 shown, the gas passage 41 has an equal-diameter structure, and the length of the transmission path of the reaction gas in the central region from the first intake port 10 to the bottom wall 21, i.e., Figure 9 the A region shown, is much smaller than the length of the transmission path of the reaction gas in the edge region from the first intake port 10 to the bottom wall 21, i.e., Figure 9 the B region shown, resulting in a lower concentration of the reaction gas at the edge region in the radial direction of the bottom wall 21. Consequently, the difference in the free molecular collision frequency of the reaction gas at the edge region of the bottom wall 21 and that at the central region of the bottom wall 21 is relatively large. Since the central region and the edge region of the bottom wall 21 correspond to the central region and the edge region of the wafer respectively, the difference in the film layer thickness between the central region and the edge region of the wafer is relatively large.

[0078] In another embodiment, as Figure 7 and Figure 8As shown, the gas passage 41 provided in the intake structure 40 can be divided into an equal-diameter section 42 and a variable-diameter section 43. The two ends of the equal-diameter section 42 are respectively connected to the first intake port 10 and one end of the variable-diameter section 43. The reaction gas can be transported from the first intake port 10 through the equal-diameter section 42 to the variable-diameter section 43. The diameter D1 of the equal-diameter section 42 is always the same, and the diameter D2 of the variable-diameter section 43 gradually increases from the equal-diameter section 42 towards the bottom wall 21 of the gas distribution structure 20, so that the cross-sectional area of the equal-diameter section 42 of the gas passage 41 remains unchanged in the cross-section parallel to the XOZ plane, and the cross-sectional area of the variable-diameter section 43 of the gas passage 41 gradually increases from the equal-diameter section 42 towards the bottom wall 21 of the gas distribution structure 20 in the cross-section parallel to the XOZ plane.

[0079] Exemplarily, as Figure 7 shown, the diameter D2 of the end of the variable-diameter section 43 connected to the equal-diameter section 42 is the same as the diameter D1 of the equal-diameter section 42, and the diameter D2 of the end of the variable-diameter section 43 far from the equal-diameter section 42 is the same as the diameter D3 of the intake structure 40. Or, as Figure 8 shown, the diameter D2 of the end of the variable-diameter section 43 connected to the equal-diameter section 42 is the same as the diameter D1 of the equal-diameter section 42, and the diameter D2 of the end of the variable-diameter section 43 far from the equal-diameter section 42 is smaller than the diameter D3 of the intake structure 40.

[0080] There is a preset interval distance between the intake structure 40 and the bottom wall 21, so that there is an interval space between the gas passage 41 and the bottom wall 21, preventing the reaction gas from forming a "dead corner" at the outermost edge of the bottom wall 21, and at the same time increasing the flow space of the reaction gas. After passing through the gas passage 41, the reaction gas can move evenly into the entire interval space, and then the reaction gas is evenly distributed to the surface of the wafer through the gas distribution structure 20.

[0081] By providing the equal-diameter section 42 and the variable-diameter section 43 in the gas passage 41, the transmission path of the reaction gas between the first intake port 10 and the edge region of the bottom wall 21 can be shortened by using the variable-diameter section 43 with a gradually increasing diameter, so as to increase the concentration of the reaction gas at the edge region of the bottom wall 21. The free molecular collision frequency of the reaction gas can be controlled from the dimensions of the transmission path and the gas concentration, thereby further improving the uniformity of the film thickness.

[0082] In this embodiment, the gas passage 41 is provided as the equal-diameter section 42 and the variable-diameter section 43, and a preset interval distance is provided between the gas passage 41 and the bottom wall 21, changing the gas transmission path of the reaction gas between different regions in the radial direction between the first intake port 10 and the bottom wall 21, reducing the concentration difference of the reaction gas between different regions in the radial direction of the bottom wall 21. The free molecular collision frequency of the reaction gas in different regions can be controlled from the dimensions of the transmission path and the gas concentration, further improving the uniformity of the film thickness, which is beneficial to performing subsequent processes and improving the product yield.

[0083] In some embodiments, referring to Figure 10 and Figure 11 as shown, the bottom wall 21 includes a first distribution portion 24 and a second distribution portion 25 arranged in sequence from the center to the edge of the bottom wall. That is, in the X direction, the second distribution portion 25 is located outside the first distribution portion 24, and the second distribution portion 25 surrounds the first distribution portion 24. In the direction from the center to the edge of the bottom wall 21 (X direction), the length of the first distribution portion 24 is less than the length of the second distribution portion 25. Referring to Figure 10 , the center of the bottom wall is F. In the direction from the center F of the bottom wall 21 to the edge, the length of the first distribution portion 24 is L1, and the length of the second distribution portion 25 is L2, and L2 is greater than L1. In the first distribution portion 24, the lengths of the respective through-holes 23 are the same. In the second distribution portion 25, in the direction from the center to the edge of the bottom wall 21, the length of the through-hole 23 gradually decreases. That is, in the second distribution portion 25, the closer the through-hole 23 is to the edge of the bottom wall 21, the smaller its length.

[0084] By setting the bottom wall 21 as the first distribution portion 24 and the second distribution portion 25, the respective through-holes 23 have lengths that match their positions on the bottom wall 21. The transmission path of the reaction gas in the through-hole 23 remains unchanged first and then gradually decreases along the direction from the center to the edge of the bottom wall 21. The lengths of the through-holes 23 in the central region of the bottom wall 21 are larger, and the lengths of the through-holes 23 in the edge region of the bottom wall 21 are smaller. By increasing the transmission path of the reaction gas in the through-holes 23 in this central region, the reaction gas in different regions can flow to the surface of the wafer substantially simultaneously, and the free molecular collision frequency of the reaction gas in different regions can be controlled from the dimension of the transmission path, thereby further improving the uniformity of the film thickness.

[0085] When the gas channel 41 is set as the equal-diameter section 42 and the variable-diameter section 43, the surface of the second distribution portion 25 close to the intake structure body 40 can also cooperate with the surface of the variable-diameter section 43 close to the bottom wall 21 to form a uniform spacer space between the intake structure body 40 and the bottom wall 21, so that the concentrations of the reaction gas in different regions of the spacer space are substantially the same, and the free molecular collision frequency of the reaction gas can be controlled from the dimension of the gas concentration, thereby further improving the uniformity of the film thickness.

[0086] In this embodiment, the bottom wall 21 is set as the first distribution part 24 and the second distribution part 25, and the lengths of the air holes 23 in the first distribution part 24 are the same. The lengths of the air holes 23 in the second distribution part 25 gradually decrease from the center of the bottom wall 21 towards the edge, so that each air hole 23 has a length matching its position on the bottom wall 21. The reaction gas in different regions can flow towards the surface of the wafer substantially simultaneously, controlling the free molecular collision frequency of the reaction gas from the dimensions of the reaction gas transmission path and gas concentration, and further improving the uniformity of the film thickness.

[0087] In other embodiments, referring to Figure 12 and Figure 13 as shown, the bottom wall 21 includes a first distribution part 24, a second distribution part 25, and a third distribution part 26 arranged in sequence from the center of the bottom wall 21 towards the edge. In the direction from the center of the bottom wall 21 towards the edge, the length of the first distribution part 24 is less than the length of the second distribution part 25. For the description of the lengths of the first distribution part 24 and the second distribution part 25, reference can be made to Figure 10 , which will not be elaborated here. The lengths of the air holes 23 in the first distribution part 24 are the same, the lengths of the air holes 23 in the third distribution part 26 are the same, and the length of the air holes 23 in the first distribution part 24 is greater than the length of the air holes 23 in the third distribution part 26. In the direction from the center of the bottom wall 21 towards the edge, the lengths of the air holes 23 in the second distribution part 25 gradually decrease.

[0088] As Figure 12 and Figure 13 shown, in the direction from the center of the bottom wall 21 towards the edge, the first distribution part 24, the second distribution part 25, and the third distribution part 26 are arranged in sequence, that is, in the X direction, the third distribution part 26 is located outside the first distribution part 24, and the second distribution part 25 is located between the first distribution part 24 and the third distribution part 26. The second distribution part 25 surrounds the first distribution part 24, and the third distribution part 26 surrounds the second distribution part 25. In the first distribution part 24, the lengths of the air holes 23 are the same. In the third distribution part 26, the lengths of the air holes 23 are the same, and the length of the air holes 23 in the first distribution part 24 is greater than the length of the air holes 23 in the third distribution part 26. In the second distribution part 25, in the direction from the center of the bottom wall 21 towards the edge, the lengths of the air holes 23 gradually decrease, that is, in the second distribution part 25, the closer the air hole 23 is to the third distribution part 26, the smaller its length.

[0089] By setting the bottom wall 21 as the first distribution portion 24, the second distribution portion 25, and the third distribution portion 26, each gas passage hole 23 has a length that matches its position on the bottom wall 21. The transport path of the reaction gas in the gas passage hole 23 remains unchanged from the center to the edge of the bottom wall 21 first, then gradually decreases, and finally remains unchanged. The length of the gas passage hole 23 in the central region of the bottom wall 21 is larger, and the length of the gas passage hole 23 in the edge region of the bottom wall 21 is smaller, increasing the transport path of the reaction gas in the gas passage hole 23 in this central region, so that the reaction gases in different regions can flow to the surface of the wafer substantially simultaneously, and the free molecular collision frequency of the reaction gases in different regions can be controlled from the dimension of the transport path, thereby further improving the uniformity of the film thickness.

[0090] When the gas channel 41 is set as the equal-diameter section 42 and the variable-diameter section 43, the surface of the second distribution portion 25 close to the intake structure body 40 can also cooperate with the surface of the variable-diameter section 43 close to the bottom wall 21 to form a uniform spacer space between the intake structure body 40 and the bottom wall 21, so that the concentrations of the reaction gases in different regions of the spacer space are approximately the same, and the free molecular collision frequency of the reaction gases can be controlled from the dimension of the gas concentration, thereby further improving the uniformity of the film thickness.

[0091] In this embodiment, the bottom wall 21 is set as the first distribution portion 24, the second distribution portion 25, and the third distribution portion 26, and the lengths of the gas passage holes 23 in the first distribution portion 24, the second distribution portion 25, and the third distribution portion 26 are respectively configured so that each gas passage hole 23 has a length that matches its position on the bottom wall 21, and the reaction gases in different regions can flow to the surface of the wafer substantially simultaneously, controlling the free molecular collision frequency of the reaction gases from the dimensions of the transport path and the gas concentration of the reaction gases, and further improving the uniformity of the film thickness.

[0092] In some embodiments, the top surface of the first distribution portion 24 is located between the top end and the bottom end of the variable-diameter section 43, or at least a part of the top surface of the first distribution portion 24 and the top surface of the second distribution portion 25 are located between the top end and the bottom end of the variable-diameter section 43.

[0093] Such as Figure 10 and Figure 12As shown, when the gas distribution structure 20 includes at least a first distribution portion 24 and a second distribution portion 25, at least a part of the first distribution portion 24 of the bottom wall 21 can extend into the reduced-diameter section 43 of the intake structure body 40, so that the top surface of the first distribution portion 24 is located between the top end and the bottom end of the reduced-diameter section 43. Also, at least a part of the first distribution portion 24 and at least a part of the second distribution portion 25 of the bottom wall 21 can be extended into the reduced-diameter section 43 of the intake structure body 40 together, so that the top surface of the first distribution portion 24 and at least a part of the top surface of the second distribution portion 25 are located between the top end and the bottom end of the reduced-diameter section 43, thereby enabling the intake structure body 40 and the bottom wall 21 to have overlapping parts in the axial direction, i.e., the Y direction, of the two. When at least a part of the first distribution portion 24 or at least a part of the first distribution portion 24 and at least a part of the second distribution portion 25 are located in the reduced-diameter section 43, the intake structure body 40 and the bottom wall 21 can cooperate with each other. By adjusting at least one of the structural forms of the reduced-diameter section 43 and the bottom wall 21, the transmission path and gas concentration of the reaction gas between the intake structure body 40 and the bottom wall 21 can be greatly changed, facilitating the control of the free molecular collision frequency of the reaction gas in different regions.

[0094] In this embodiment, the top surface of the first distribution portion 24 is arranged between the top end and the bottom end of the reduced-diameter section 43, or the top surface of the first distribution portion 24 and at least a part of the top surface of the second distribution portion 25 are arranged between the top end and the bottom end of the reduced-diameter section 43, so that the intake structure body 40 and the bottom wall 21 cooperate with each other, and the transmission path and gas concentration of the reaction gas between the intake structure body 40 and the bottom wall 21 can be adjusted by designing the structural forms of the reduced-diameter section 43 and the bottom wall 21, thereby controlling the free molecular collision frequency of the reaction gas in different regions, which is beneficial to controlling the uniformity of the film layer thickness.

[0095] In some embodiments, the first distribution portion 24 is arranged opposite to the equal-diameter section 42, and the diameter of the first distribution portion 24 is smaller than the diameter of the equal-diameter section 42.

[0096] As Figure 10 and Figure 12 shown, the first distribution portion 24 is arranged opposite to the equal-diameter section 42, that is, the first distribution portion 24 and the equal-diameter section 42 are respectively arranged at the axial centers of the bottom wall 21 and the intake structure body 40, and the diameter of the first distribution portion 24 in the X direction of the bottom wall 21 is smaller than the diameter of the equal-diameter section 42 in the axial direction of the intake structure body 40, so that the projection of the first distribution portion 24 on the XOZ plane is within the projection range of the equal-diameter section 42 on the XOZ plane.

[0097] Through the above setting method, a transmission path for reaction gas with a relatively stable gas flow cross-sectional area can be formed between the intake structure 40 and the bottom wall 21, and when the first distribution portion 24 is located within the variable-diameter section 43, it can be avoided that the diameter of the first distribution portion 24 is too long, resulting in too small a gas flow cross-sectional area, and further causing the flow rate of the reaction gas to fail to meet the requirements of the vapor deposition process.

[0098] In this embodiment, by relatively arranging the first distribution portion 24 with the equal-diameter section 42 and making the diameter of the first distribution portion 24 smaller than the diameter of the equal-diameter section 42, it is convenient to form a transmission path for reaction gas with a relatively stable gas flow cross-sectional area between the intake structure 40 and the bottom wall 21, and avoid that the gas flow cross-sectional area is too small, resulting in the flow rate of the reaction gas not meeting the requirements of the vapor deposition process, ensuring that the spacing space between the intake structure 40 and the bottom wall 21 can meet the requirements of the vapor deposition process and is conducive to improving the uniformity of the film layer thickness.

[0099] In some other embodiments, the surface of the second distribution portion 25 close to the intake structure 40 is parallel to the surface of the intake structure 40 close to the gas distribution structure 20.

[0100] Such as Figure 10 and Figure 12 shown, the surface C of the second distribution portion 25 close to the intake structure 40, that is, the surface close to the intake structure 40, and the surface D of the intake structure 40 close to the gas distribution structure 20 are set to be parallel to each other, so that the surface of the second distribution portion 25 close to the intake structure 40 can also cooperate with the surface of the variable-diameter section 43 close to the bottom wall 21 to form a transmission path for reaction gas with a relatively stable gas flow cross-sectional area between the intake structure 40 and the bottom wall 21. Exemplarily, the angle between the surface C of the second distribution portion 25 close to the intake structure 40 and the XOZ plane is set as α, and α can be greater than or equal to 45° for example, and the angle β between the surface D of the intake structure 40 close to the gas distribution structure 20 and the XOZ plane is set to be the same as the angle α.

[0101] In this embodiment, by setting the surface of the second distribution portion 25 close to the intake structure 40 and the surface of the intake structure 40 close to the gas distribution structure 20 to be parallel to each other, a transmission path for reaction gas with a relatively stable gas flow cross-sectional area is formed between the intake structure 40 and the bottom wall 21, and the free molecular collision frequency of the reaction gas can be controlled from the dimensions of the transmission path of the reaction gas and the gas concentration, thereby further improving the uniformity of the film layer thickness.

[0102] In some other embodiments, the first distribution portion 24 may be disposed opposite to the equal-diameter section 42, and the diameter of the first distribution portion 24 may be made smaller than that of the equal-diameter section 42. At the same time, the surface of the second distribution portion 25 close to the intake structure body 40 and the surface of the intake structure body 40 close to the gas distribution structure 20 are arranged to be parallel to each other, which can further ensure the stability and uniformity of the transmission path of the reaction gas, and more precisely control the free molecule collision frequency of the reaction gas, thereby further improving the uniformity of the film thickness.

[0103] In some embodiments, the bottom wall 21 includes a first distribution portion 24, a second distribution portion 25, and a third distribution portion 26. There is a first vertical distance between the top surface of the first distribution portion 24 and the bottom end of the equal-diameter section 42, a second vertical distance between the top surface of the second distribution portion 25 and the hole wall of the variable-diameter section 43, and a third vertical distance between the top surface of the third distribution portion 26 and the hole wall of the variable-diameter section 43. Among them, the second vertical distance is greater than the first vertical distance and the third vertical distance.

[0104] As Figure 12 shown, when the bottom wall 21 includes the first distribution portion 24, the second distribution portion 25, and the third distribution portion 26, along the axial direction of the intake structure body 40, i.e., the Y direction, there is a first vertical distance H1 between the top surface of the first distribution portion 24 and the bottom end of the equal-diameter section 42, i.e., the end close to the bottom wall 21, a second vertical distance H2 between the top surface of the second distribution portion 25 and the hole wall of the variable-diameter section 43, and a third vertical distance H3 between the top surface of the third distribution portion 26 and the hole wall of the variable-diameter section 43, and the second vertical distance H2 is greater than both the first vertical distance H1 and the third vertical distance H3 at the same time.

[0105] In this embodiment, by setting the second vertical distance H2 among the first vertical distance H1, the second vertical distance H2, and the third vertical distance H3 to be the largest among the three, more gas can flow to the third distribution portion 26, ensuring that there is a sufficient concentration of reaction gas in the edge region of the wafer, so as to reduce the thickness difference of the film layer between the edge region and the central region of the wafer and improve the uniformity of the film thickness.

[0106] In some embodiments, a third heating portion 70 is provided in the carrier 60. The third heating portion 70 includes a plurality of third sub-heating portions 71 embedded in the carrier 60, and the plurality of third sub-heating portions 71 are arranged radially along the carrier 60.

[0107] As Figure 2As shown, a third heating unit 70 is further provided in the carrier 60. The third heating unit 70 is used to heat the wafer on the carrier 60, so as to provide a suitable reaction temperature for the wafer. The third heating unit 70 includes a plurality of third sub-heating units 71 embedded in the carrier 60. The third sub-heating unit 71 can be, for example, a third heating coil, so as to achieve the heating effect of the third sub-heating unit 71 by means of the heating coil. The plurality of third sub-heating units 71 are arranged along the radial direction of the carrier 60, i.e., the X direction and the Z direction, such that different third sub-heating units 71 correspond to different positions in the radial direction of the carrier 60, and can achieve a good temperature control effect on the wafers in each region in the radial direction, which is convenient for controlling the temperature distribution in the radial direction of the carrier 60 of the chemical vapor deposition equipment to match the requirements of the film thickness control.

[0108] Exemplarily, as Figure 14 shown, when it is necessary to use the third heating unit 70 to reduce the thickness difference between the center region and the edge of the film on the wafer, two third sub-heating units 71 arranged along the radial direction of the carrier 60, i.e., the third sub-heating unit 71-A and the third sub-heating unit 71-B, can be set, and the heating temperatures of the third sub-heating unit 71-A and the third sub-heating unit 71-B are set to 305 °C and 300 °C respectively, so as to increase the free molecular collision frequency of the reaction gas in the center region of the wafer by increasing the temperature, thereby reducing the adsorption of the reaction gas on the center region of the wafer.

[0109] In this embodiment, the plurality of third sub-heating units 71 embedded in the carrier 60 are used as the third heating unit 70, and the plurality of third sub-heating units 71 are arranged along the radial direction of the carrier 60, which is convenient for controlling the temperature distribution in the radial direction of the carrier 60 of the chemical vapor deposition equipment to match the requirements of the film thickness control, further improving the control accuracy of the temperature distribution in the chemical vapor deposition equipment, thereby controlling the free molecular collision frequency of the reaction gas in different regions, which is beneficial to improving the uniformity of the film thickness.

[0110] In some embodiments, as Figure 2 shown, the chemical vapor deposition equipment further includes a second gas inlet 80 and an air outlet 90. The second gas inlet 80 is used to introduce a non-reactive gas (such as argon), and the non-reactive gas is used to sweep the residual reaction gas after the film is formed. The air outlet 90 is used to discharge the non-reactive gas and the residual reaction gas. A conical speed regulation structure 81 is provided at the second gas inlet 80. The conical speed regulation structure 81 can move axially relative to the second gas inlet 80 to adjust the flow area of the second gas inlet 80, thereby realizing the flow rate regulation of the non-reactive gas. Exemplarily, in the Figure 2 shown embodiment, the downward movement of the conical speed regulation structure 81 can reduce the flow rate of the non-reactive gas, and the upward movement of the conical speed regulation structure 81 can increase the flow rate of the non-reactive gas.

[0111] It should be noted that, in order to improve the uniformity of the film layer thickness, when forming a film layer on a wafer using the above-mentioned chemical vapor deposition equipment, the temperature of the reaction gas before being introduced into the chemical vapor deposition equipment can also be adjusted, or the flow rate of the non-reaction gas can be adjusted, so as to control the free molecular collision frequency of the reaction gas and thus control the thickness of the film layer. Exemplarily, for example, the storage temperature of the storage device of the reaction gas connected to the first gas inlet 10 can be increased to increase the free molecular collision frequency of the reaction gas by increasing the temperature, thereby reducing the adsorption of the reaction gas by the wafer. The flow rate of the non-reaction gas can also be reduced to reduce the scavenging rate of the reaction gas in the edge region, thereby increasing the thickness of the film layer in the edge region of the wafer.

[0112] Those skilled in the art will readily conceive of other embodiments of the present application upon considering the specification and practicing the application herein. The present application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of the present application and include known common knowledge or conventional technical means in the technical field not disclosed in the present application. The specification and examples are only to be considered exemplary.

[0113] It should be understood that the present application is not limited to the exact structures described above and shown in the drawings, and various modifications and changes can be made without departing from its scope.

Claims

1. A vapor deposition device, characterized in that, The vapor deposition equipment includes: A first air inlet; A gas distribution structure, the gas distribution structure includes a bottom wall and a side wall arranged around the bottom wall, a plurality of through holes are arranged on the bottom wall, and a first heating part surrounding the bottom wall is arranged in the side wall; An air inlet structure, the air inlet structure is arranged in the space formed by enclosing the bottom wall and the side wall, a gas channel connecting the first air inlet and each of the through holes is arranged in the air inlet structure, and a second heating part surrounding the gas channel is arranged in the air inlet structure; A carrier stage for carrying a wafer, and each of the through holes faces the carrier stage; The first heating part and the second heating part are in different positions in the horizontal direction; The second heating part includes a plurality of second sub-heating parts embedded in the air inlet structure, and the plurality of second sub-heating parts are arranged radially along the air inlet structure; The first heating part and the plurality of second sub-heating parts are used to control the free molecular collision frequency of the reaction gas in the corresponding area.

2. The vapor deposition apparatus according to claim 1, wherein The first heating part includes at least one first sub-heating part embedded in the side wall, and each first sub-heating part includes a first heating coil surrounding the bottom wall; or, each first sub-heating part includes at least two groups of first heating units, and each group of first heating units includes at least two first arc-shaped heating wires, and along the circumferential direction of the gas distribution structure, the first arc-shaped heating wires of different groups of first heating units are arranged at intervals and crosswise.

3. The vapor deposition apparatus according to claim 2, wherein A plurality of the first sub-heating parts are arranged at intervals along the axial direction of the gas distribution structure.

4. The vapor deposition apparatus according to claim 1, wherein Each of the second sub-heating parts includes at least one second heating coil surrounding the gas channel; or, each of the second sub-heating parts includes at least two groups of second heating units, and each group of second heating units includes at least two second arc-shaped heating wires, and along the circumferential direction of the air inlet structure, the second arc-shaped heating wires of different groups of second heating units are arranged at intervals and crosswise.

5. The vapor deposition apparatus according to claim 4, characterized in that, At least one of the second sub-heating parts includes a plurality of the second heating coils, and the plurality of second heating coils in the same second sub-heating part are arranged at intervals along the axial direction of the air inlet structure.

6. The vapor deposition apparatus according to any one of claims 1 to 5, characterized in that, The gas channel includes an equal-diameter section and a variable-diameter section, one end of the equal-diameter section is connected to the first air inlet, the other end of the equal-diameter section is connected to one end of the variable-diameter section, the diameter of the variable-diameter section gradually increases from the equal-diameter section towards the bottom wall, and a preset interval distance is provided between the air inlet structure and the bottom wall.

7. The vapor deposition apparatus according to claim 6, wherein The bottom wall includes a first distribution part and a second distribution part arranged in sequence from the center to the edge of the bottom wall. Among them, in the direction from the center to the edge of the bottom wall, the length of the first distribution part is less than the length of the second distribution part, the lengths of the through holes in the first distribution part are the same, and the lengths of the through holes in the second distribution part gradually decrease; or, The bottom wall includes a first distribution portion, a second distribution portion, and a third distribution portion arranged in sequence from the center to the edge of the bottom wall. Among them, in the direction from the center to the edge of the bottom wall, the length of the first distribution portion is less than the length of the second distribution portion. The lengths of the air holes in the first distribution portion are the same, the lengths of the air holes in the third distribution portion are the same, the length of the air holes in the first distribution portion is greater than the length of the air holes in the third distribution portion, and the lengths of the air holes in the second distribution portion gradually decrease.

8. The vapor deposition apparatus according to claim 7, wherein The top surface of the first distribution portion is located between the top end and the bottom end of the reduced-diameter section; or, The top surface of the first distribution portion and at least a part of the top surface of the second distribution portion are located between the top end and the bottom end of the reduced-diameter section.

9. The vapor deposition apparatus according to claim 7, characterized in that, The first distribution portion is disposed opposite to the equal-diameter section, and the diameter of the first distribution portion is smaller than the diameter of the equal-diameter section; and / or, The surface of the second distribution portion close to the air inlet structure is parallel to the surface of the air inlet structure close to the gas distribution structure.

10. The vapor deposition apparatus according to claim 7, wherein The bottom wall includes the first distribution portion, the second distribution portion, and the third distribution portion. There is a first vertical distance between the top surface of the first distribution portion and the bottom end of the equal-diameter section, a second vertical distance between the top surface of the second distribution portion and the hole wall of the reduced-diameter section, and a third vertical distance between the top surface of the third distribution portion and the hole wall of the reduced-diameter section; Among them, the second vertical distance is greater than the first vertical distance, and the second vertical distance is greater than the third vertical distance.

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