Bank protection agent for assisting in etching IC (integrated circuit) carrier board circuit

By adding specific ingredients of the bank guard to the etching liquid, the problems of side walls tilting and uneven when etching the IC carrier plate line are solved, and the smoothness of the line edges is achieved.

CN120026326APending Publication Date: 2025-05-23ZHUHAI WEIZHIHUA NEW MATERIALS CO LTD
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Patent Information

Application Number
CN202510207080.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-25
Publication Date
2025-05-23

AI Technical Summary

Technical Problem

When etching the IC carrier board line, the existing etching liquid will cause the line side wall to be inclined and uneven, resulting in side erosion.

Method used

A shore guard agent assisting the etching of IC carrier circuits is used, and its components include organic acids, cerium nitrate ammonium salts, zinc salts, imidazole compounds, pyridine compounds and polyamines. By adding them to the etching liquid, the etching process is adjusted to avoid side etching.

Benefits of technology

It effectively avoids the surface unevenness and shape deviation of the IC carrier plate line etching edges, ensuring the flatness of the line side walls.

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Abstract

The invention discloses a bank protection agent for auxiliary etching of an IC (integrated circuit) substrate circuit, and the bank protection agent comprises the following raw materials by volume: 5-10 g of organic acid, 5-10 g of ceric ammonium nitrate, 5-8 g of zinc salt, 5-10 g of imidazole compound, 8-10 g of pyridine compound, 10-20 g of polyamine and the balance of water. After the bank protection agent designed by the invention is added into the etching solution for etching, the problems of uneven surface and shape deviation of the etched edge of the IC carrier board circuit are solved.
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Description

Technical Field

[0001] The invention relates to a shore protection agent for assisting etching of IC carrier circuits. Background Art

[0002] The principle of the traditional IC substrate circuit etching liquid is that the excess copper of the substrate copper clad board after the circuit is formed is etched away with the etching liquid to form the circuit; when etching the IC substrate circuit, it is hoped that the etching direction is perpendicular to the IC substrate circuit, but the existing etching liquid etches in all directions during the etching process. As the etching proceeds, the copper on the side wall of the circuit edge is etched away, causing the side wall of the circuit to be tilted and uneven, resulting in side etching; in summary, how to avoid the side etching phenomenon has become a problem that needs to be solved urgently. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a shore protection agent for assisting etching of IC carrier circuits.

[0004] In order to solve the above-mentioned technical problems, the present invention adopts the following technical solutions:

[0005] A shore protection agent for assisting etching of IC carrier circuits, with a volume calculated as 1L, and raw material components including: 5-10g of organic acid, 5-10g of cerium ammonium nitrate salt, 5-8g of zinc salt, 5-10g of imidazole compound, 8-10g of pyridine compound, 10-20g of polyamine, and the balance of water.

[0006] Preferably, the organic acid is methanesulfonic acid or formic acid.

[0007] Preferably, the zinc salt is zinc sulfate or zinc chloride.

[0008] Preferably, the imidazole compound is benzimidazole.

[0009] Preferably, the pyridine compound is 2-2-bipyridine.

[0010] Preferably, the polyamine is diethanolamine or triethylamine.

[0011] The beneficial effects of the present invention are:

[0012] After the etching liquid is added with the revetment agent designed in the present application for etching, the etching edge of the IC carrier circuit will not have the problem of surface unevenness and shape deviation. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0014] Figure 1This is a schematic diagram of the effect of etching the IC substrate circuit with a conventional etching solution;

[0015] Figure 2 This is a schematic diagram of the effect of etching the IC substrate circuit after adding the shore protection agent of the present application to the etching solution. DETAILED DESCRIPTION

[0016] References to embodiments of the present invention will now be provided in detail, one or more examples of which are described below. Each example is provided as an explanation rather than a limitation of the present invention. In fact, it will be apparent to those skilled in the art that various modifications and variations may be made to the present invention without departing from the scope or spirit of the present invention. For example, a feature illustrated or described as part of one embodiment may be used in another embodiment to produce a further embodiment.

[0017] Therefore, it is intended that the present invention covers such modifications and variations that fall within the scope of the appended claims and their equivalents. Other objects, features and aspects of the present invention are disclosed in or are obvious from the following detailed description. Those of ordinary skill in the art will appreciate that this discussion is only a description of exemplary embodiments and is not intended to limit the broader aspects of the present invention.

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0019] Except as shown in the operating examples or otherwise indicated, all numbers used in the specification and claims to indicate the amount of ingredients, physicochemical properties, etc. are understood to be adjusted by the term "about" in all cases. For example, therefore, unless otherwise indicated, the numerical parameters listed in the above specification and the attached claims are approximate values, and those skilled in the art can use the teachings disclosed herein to seek to obtain the desired properties and appropriately change these approximate values. The use of numerical ranges expressed as endpoints includes all numbers within the range and any range within the range, for example, 1 to 5 includes 1, 1.1, 1.3, 1.5, 2, 2.75, 3, 3.80, 4 and 5, etc.

[0020] Experimental recipe examples

[0021]

[0022]

[0023] The method of use is as follows: taking Example 1 as an example, the shore protection agent prepared in Example 1 is added to the etching solution, and the added amount ratio is 2-10 ml of the shore protection agent is added to 1L of the etching solution. After stirring evenly, the IC substrate circuit is etched.

[0024]

[0025] Taking experimental group 2 as an example, after adding copper chloride, hydrochloric acid, sodium chloride, and the components of the shore protection agent designed in this application, add water to 1L and stir evenly, and then spray the IC substrate circuit. Figure 1 This is the effect diagram of the IC substrate circuit etched by conventional etching solution without adding revetment agent. Figure 1 As can be seen in Figure 1 The etched edge of part A in FIG. 1 is uneven. Figure 2 The effect diagram of the IC substrate circuit etched by adding the shore protection agent of the present application to the etching liquid, from Figure 2 It can be seen from the B part that the etching edge is relatively flat. After the etching liquid is added with the revetment agent designed in the present application for etching, the etching edge of the IC carrier circuit will not have the problem of surface unevenness and shape deviation.

[0026] In the above technical solution, formic acid can be selected as the organic acid, zinc chloride can be selected as the zinc salt, and triethylamine can be selected as the polyamine.

[0027] Although the present invention is described in detail with reference to the above embodiments, it is obvious to those skilled in the art through this disclosure that various changes or modifications may be made to the present invention without departing from the principle and spirit of the present invention defined by the claims. Therefore, the detailed description of the embodiments of the present disclosure is only used to explain, not to limit the present invention, but the scope of protection is limited by the content of the claims.

Claims

1. A shore protection agent for assisting etching of IC substrate circuits, characterized in that: The volume is calculated based on 1L, and the raw material components include: 5-10g of organic acid, 5-10g of cerium ammonium nitrate salt, 5-8g of zinc salt, 5-10g of imidazole compound, 8-10g of pyridine compound, 10-20g of polyamine, and the balance of water.

2. A shore protection agent for assisting etching of IC substrate circuits according to claim 1, characterized in that: The organic acid is methanesulfonic acid or formic acid.

3. A shore protection agent for assisting etching of IC substrate circuits according to claim 1, characterized in that: The zinc salt is zinc sulfate or zinc chloride.

4. A shore protection agent for assisting etching of IC substrate circuits according to claim 1, characterized in that: The imidazole compound is benzimidazole.

5. A shore protection agent for assisting etching of IC substrate circuits according to claim 1, characterized in that: The pyridine compound is 2-2-bipyridine.

6. A shore protection agent for assisting etching of IC substrate circuits according to claim 1, characterized in that: The polyamine is diethanolamine or triethylamine.