Optical device and manufacturing method thereof

Abstract

An optical device and a method of manufacturing the same are presented in which a first connection structure having a lens is used to transmit and receive an optical signal to and from the optical device. In an embodiment, the first connection structure includes a first mirror and a lens aligned with the first mirror. The first mirror and lens redirect the optical signal into and out of the optical device through an edge coupler within the optical device.

Description

Technical Field

[0001] Embodiments of the present application relate to optical devices and methods for manufacturing the same. Background Art

[0002] Electrical signaling and processing is a technology used for signal transmission and processing. In recent years, optical signaling and processing has been used in an increasing number of applications, especially due to the use of optical fiber related applications for signal transmission.

[0003] Optical signals and processing are often combined with electrical signals and processing to provide sophisticated applications. For example, optical fibers can be used for long-range signal transmission, and electrical signals can be used for short-range signal transmission and processing and control. Thus, a device is formed that integrates long-range optical components and short-range electrical components for conversion between optical and electrical signals, as well as processing of optical and electrical signals. Thus, a package may include: an optical (photonic) die including an optical device and an electronic die including an electronic device. Summary of the invention

[0004] Some embodiments of the present application provide a method for manufacturing an optical device, the method comprising: providing a first optical package; and attaching a first connecting unit to the first optical package, the first connecting unit comprising: an optical fiber array unit; a first reflector; and a first lens located in a first interval, wherein the first interval is located between the first reflector and an edge coupler in the optical package.

[0005] Some other embodiments of the present application provide a method for manufacturing an optical device, the method comprising: providing a first optical package having an edge coupler; and positioning a lens adjacent to the edge coupler, the lens being connected to a fiber array unit via a connecting rod.

[0006] Some other embodiments of the present application provide an optical device, comprising: an optical interposer having a first edge coupler; and a connecting unit attached to the optical interposer, the connecting unit comprising: an optical fiber array unit; a connecting rod connected to the optical fiber array unit; and a first lens attached to the connecting rod, the first lens being surrounded by ambient atmosphere. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0008] Figures 1 to 9 The formation of a first optical package according to some embodiments is shown.

[0009] FIG. 10A to FIG. 10B Illustrates attaching a first connection unit to a first optical package according to some embodiments.

[0010] Fig.11 Illustrates attaching an interposer substrate according to some embodiments.

[0011] Fig.12 Illustrates a top view of a first optical package and a first connection unit according to some embodiments.

[0012] FIG. 13A to FIG. 13C Illustrates a multi-level lens group according to some embodiments.

[0013] Fig.14 Illustrates bonding an electronic integrated circuit to an interposer substrate according to some embodiments.

[0014] FIG. 15A to FIG. 15C Illustrates an attachment process using a sealant according to some embodiments.

[0015] Fig.16 Illustrates a flowchart for attaching a first connection unit according to some embodiments. Detailed Description

[0016] The following disclosure provides many different embodiments or examples for implementing different features of the embodiments of the present disclosure. Specific examples of components and arrangements are described below to simplify the embodiments of the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include embodiments where the first component and the second component are in direct contact, and may also include embodiments where additional components may be formed between the first component and the second component, such that the first component and the second component may not be in direct contact. In addition, the embodiments of the present disclosure may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0017] In addition, for ease of description, spatially relative terms such as "beneath", "below", "lower", "above", "upper", etc. may be used herein to describe the relationship of one element or component to another (or other) element or component as shown in the figures. In addition to the orientation depicted in the figures, spatially relative terms are intended to encompass different orientations of the device in use or operation. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may be interpreted accordingly.

[0018] Embodiments will now be discussed with respect to certain embodiments in which a reflector structure is utilized to route incoming and outgoing optical signals between an optical fiber and an edge coupler of a first optical package, forming a compact universal photonic engine (COUPE) package with an integrated optical port and a lens / reflector module to form a COUPE-edge coupler (COUPE-EC) package on a substrate. However, the presented embodiments are intended to be illustrative and are not intended to limit the presented ideas to the precise embodiments described. Rather, the presented ideas may be incorporated into a wide variety of embodiments (including any suitable technology node, such as an N3 or N5 technology node or any suitable wafer-level process), and all such embodiments may be included within the overall scope of the disclosed embodiments.

[0019] Reference now Figure 1 , showing an optical interposer 100 ( Figure 5 The initial structure of Figure 1 In the particular embodiment shown in FIG. 1 , the optical interposer 100 is a photonic integrated circuit (PIC) and at this stage comprises a first substrate 101, a first insulating layer 103 and a first active layer 201 ( Figure 1 Not shown separately, but the following Figure 2 1 and 2. In an embodiment, at the beginning of the manufacturing process of the optical interposer 100, the first substrate 101, the first insulator layer 103, and the layer of material 105 for the first active layer 201 of the first optical component 203 may be collectively part of a silicon-on-insulator (SOI) substrate. First looking at the first substrate 101, the first substrate 101 may be a semiconductor material such as silicon or germanium, a dielectric material such as glass, or any other suitable material that allows structural support of the devices thereon.

[0020] The first insulating layer 103 may be a dielectric layer that separates the first substrate 101 from the first active layer 201 thereon, and in some embodiments may additionally serve as a portion of a cladding material surrounding a subsequently fabricated first optical component 203 (discussed further below). In embodiments, the first insulating layer 103 may be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, etc., formed using methods such as implantation (e.g., to form a buried oxide (BOX) layer) or may be deposited onto the first substrate 101 using deposition methods such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. However, any suitable material and fabrication method may be used.

[0021] The material 105 for the first active layer 201 is initially (before patterning) a conformal layer of the material of the first active layer 201 that will be used to begin fabricating the first optical component 203. In embodiments, the material 105 for the first active layer 201 may be a semi-transparent material that may be used as a core material for the desired first optical component 203, such as a semiconductor material such as silicon, germanium, silicon germanium, combinations of these, and the like, while in other embodiments, the material 105 for the first active layer 201 may be a dielectric material such as silicon nitride, and the like, but in other embodiments, the material 105 for the first active layer 201 may be a III-V material, a lithium niobate material, or a polymer. In embodiments where the material 105 for the first active layer 201 is deposited, the material 105 for the first active layer 201 may be deposited using methods such as epitaxial growth, chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, and the like. In other embodiments where the first insulating layer 103 is formed using an implantation method, the material 105 of the first active layer 201 may initially be part of the first substrate 101 before the implantation process to form the first insulating layer 103. However, the material 105 of the first active layer 201 may be formed using any suitable material and fabrication method.

[0022] Figure 2 It is shown that once the material 105 for the first active layer 201 is prepared, the first optical component 203 for the first active layer 201 is manufactured using the material 105 for the first active layer 201. In an embodiment, the first optical component 203 of the first active layer 201 may include components such as optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), couplers (e.g., grating couplers, edge couplers of narrow waveguides with a width between about 1 nm and about 200 nm, etc.), directional couplers, optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optical converters, lasers, combinations of these, etc. However, any suitable first optical component 203 may be used.

[0023] In order to form the first active layer 201 of the first optical component 203 starting from the initial material, the material 105 for the first active layer 201 can be patterned into a desired shape of the first active layer 201 for the first optical component 203. In an embodiment, the material 105 for the first active layer 201 can be patterned using, for example, one or more photolithography masking and etching processes. However, any suitable method of patterning the material 105 for the first active layer 201 can be utilized. For some of the first optical components 203, such as waveguides or edge couplers, the patterning process can be all or at least a majority of the fabrication used to form these first optical components 203.

[0024] Figure 3 It is shown that for those components that utilize further manufacturing processes, such as Mach-Zehnder silicon photonic switches that utilize resistive heating elements, additional processing can be performed before or after patterning the material for the first active layer 201. For example, implantation processes, additional deposition and patterning processes for different materials (e.g., resistive heating elements, III-V materials for converters), combinations of all of these processes, etc. can be utilized to further assist in manufacturing various desired first optical components 203. In certain embodiments, and as Figure 3 As specifically shown in FIG. 1 , in some embodiments, epitaxial deposition of semiconductor material 301 such as germanium (for example, electrical / optical signal modulation and conversion) can be performed on patterned portions of material 105 of first active layer 201. In such embodiments, semiconductor material 301 can be epitaxially grown to help manufacture, for example, photodiodes for photoelectric converters. All such manufacturing processes and all suitable first optical components 203 can be manufactured, and all such combinations are fully intended to be included within the scope of the embodiments.

[0025] Figure 4 It is shown that once the independent first optical component 203 of the first active layer 201 has been formed, the second insulating layer 401 can be deposited to cover the first optical component 203 and provide additional cladding material. In an embodiment, the second insulating layer 401 can be a dielectric layer that separates the independent components of the first active layer 201 from each other and from the structure above, and can additionally serve as another portion of the cladding material surrounding the first optical component 203. In an embodiment, the second insulating layer 401 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations of these, etc. formed using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations of these, etc. Once the material of the second insulating layer 401 has been deposited, the material can be flattened using, for example, a chemical mechanical polishing process to flatten the top surface of the second insulating layer 401 (in an embodiment where the second insulating layer 401 is intended to completely cover the first optical component 203) or to flatten the second insulating layer 401 and the top surface of the first optical component 203. However, any suitable material and manufacturing method can be used.

[0026] Figure 5 4 shows that once the first optical component 203 of the first active layer 201 has been fabricated and the second insulating layer 401 has been formed, a first metallization layer 501 is formed to electrically connect the first active layer 201 of the first optical component 203 to the control circuit, to each other, and to subsequently attached devices ( Figure 5 Not shown, but the following Figure 6100 ). In an embodiment, the first metallization layer 501 is formed of alternating layers of dielectric material and conductive material and may be formed by any suitable process, such as deposition, damascene, dual damascene, etc. In a particular embodiment, there may be multiple metallization layers for interconnecting the various first optical components 203, but the exact number of first metallization layers 501 depends on the design of the optical interposer 100.

[0027] In addition, during the manufacture of the first metallization layer 501, one or more second optical components 503 may be formed as part of the first metallization layer 501. In some embodiments, the second optical components 503 of the first metallization layer 501 may include components such as couplers (e.g., edge couplers, grating couplers, etc.) for connecting to external signals, optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), optical modulators (e.g., Mach-Zehnder silicon photonic switches, micro-electromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optical converters, lasers, combinations of these, etc. However, any suitable optical components may be used for the one or more second optical components 503.

[0028] In an embodiment, the one or more second optical components 503 may be formed by initially depositing a material for the one or more second optical components 503. In an embodiment, the material for the one or more second optical components 503 may be a dielectric material such as silicon nitride, silicon oxide, a combination of these, or a semiconductor material such as silicon deposited using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination of these, etc. However, any suitable material and any suitable deposition method may be utilized.

[0029] Once the material for the one or more second optical components 503 has been deposited or otherwise formed, the material can be patterned into a desired shape for the one or more second optical components 503. In an embodiment, the material for the one or more second optical components 503 can be patterned using, for example, one or more photolithographic masking and etching processes. However, any suitable method of patterning the material for the one or more second optical components 503 can be utilized.

[0030] For some of the one or more second optical components 503, such as waveguides or edge couplers, the patterning process may be all or at least a majority of the fabrication used to form these components. In addition, for those components that utilize further fabrication processes, such as Mach-Zehnder silicon photonic switches that utilize resistive heating elements, additional processing may be performed before or after patterning the material for the one or more second optical components 503. For example, implantation processes, additional deposition and patterning processes for different materials, combinations of all of these processes, and the like may be utilized to further assist in fabricating various desired one or more second optical components 503. All such fabrication processes and all suitable one or more second optical components 503 may be fabricated, and all such combinations are fully intended to be included within the scope of the embodiments.

[0031] Once the one or more second optical components 503 of the first metallization layer 501 have been fabricated, a first bonding layer 505 is formed over the first metallization layer 501. In an embodiment, the first bonding layer 505 may be used for dielectric-to-dielectric and metal-to-metal bonding. According to some embodiments, the first bonding layer 505 is formed of a first dielectric material 509 such as silicon oxide, silicon nitride, etc. The first dielectric material 509 may be deposited using any suitable method, such as CVD, high density plasma chemical vapor deposition (HDPCVD), PVD, atomic layer deposition (ALD), etc. However, any suitable material and deposition process may be utilized.

[0032] Once the first dielectric material 509 has been formed, a first opening is formed in the first dielectric material 509 to expose the conductive portion of the underlying layer in preparation for forming the first bonding pad 507 in the first bonding layer 505. Once the first opening has been formed in the first dielectric material 509, the first opening can be filled with a seed layer and a plated metal to form the first bonding pad 507 in the first dielectric material 509. The seed layer can be blanket deposited on the top surface of the first dielectric material 509 and the exposed conductive portion of the underlying layer and the sidewalls of the opening and the second opening. The seed layer can include a copper layer. The seed layer can be deposited using a process such as sputtering, evaporation, or plasma enhanced chemical vapor deposition (PECVD), depending on the desired material. The plated metal can be deposited on the seed layer by a plating process such as electroplating or chemical plating. The plated metal can include copper, copper alloys, etc. The plated metal can be a filling material. A barrier layer (not shown separately) can be blanket deposited on the top surface of the first dielectric material 509 and the sidewalls of the opening and the second opening before the seed layer. The barrier layer may include titanium, titanium nitride, tantalum, tantalum nitride, or the like.

[0033] After filling the first opening, a planarization process, such as CMP, is performed to remove the seed layer and excess portions of the plated metal, thereby forming a first bonding pad 507 in the first bonding layer 505. In some embodiments, a bonding pad via (not separately shown) may also be used to connect the first bonding pad 507 to the underlying conductive portion, and to connect the first bonding pad 507 to the first metallization layer 501 through the underlying conductive portion.

[0034] In addition, the first bonding layer 505 may also include one or more third optical components 511 incorporated into the first bonding layer 505. In such an embodiment, the one or more third optical components 511 may be manufactured using similar methods and similar materials as the one or more second optical components 503 (described above), such as by waveguides and other structures formed at least in part by deposition and patterning processes, prior to depositing the first dielectric material 509. However, any suitable structures, materials, and any suitable manufacturing methods may be utilized.

[0035] Figure 6 A first bonding layer 505 is shown bonding a first semiconductor device 601 to an optical interposer 100. In some embodiments, the first semiconductor device 601 is an electronic integrated circuit (EIC, e.g., a device without optical devices) and may have a semiconductor substrate 603, a layer of active devices 605, an interconnect structure 607 thereon, a second bonding layer 609, and associated third bonding pads 611. In an embodiment, the semiconductor substrate 603 may be similar to the first substrate 101 (e.g., a semiconductor material such as silicon or silicon germanium), the active devices 605 may be transistors, capacitors, resistors, etc. formed above the semiconductor substrate 603, the interconnect structure 607 may be similar to the first metallization layer 501 (without optical components), the second bonding layer 609 may be similar to the first bonding layer 505, and the third bonding pads 611 may be similar to the first bonding pads 507. However, any suitable device may be utilized.

[0036] In an embodiment, the first semiconductor device 601 may be configured to work with the optical interposer 100 for a desired function. In some embodiments, the first semiconductor device 601 may be a high bandwidth memory (HBM) module, an xPU, a logic die, a 3DIC die, a CPU, a GPU, a SoC die, a MEMS die, a combination of these, etc. Any suitable device having any suitable function may be used, and all such devices are fully intended to be included within the scope of the embodiments.

[0037] In an embodiment, the first semiconductor device 601 and the first bonding layer 505 can be bonded using dielectric-to-dielectric and metal-to-metal bonding processes. In a specific embodiment utilizing dielectric-to-dielectric and metal-to-metal bonding processes, the process can begin by activating the surface of the second bonding layer 609 and the surface of the first bonding layer 505. As an example, activating the top surfaces of the first bonding layer 505 and the second bonding layer 609 can include dry processing, wet processing, plasma processing, exposure to an inert gas plasma, exposure to H 2 , exposure to N 2 , exposure to O 2 , combinations thereof, etc. In an embodiment using wet processing, for example, RCA cleaning may be used. In another embodiment, the activation process may include other types of processing. The activation process facilitates the bonding of the first bonding layer 505 and the second bonding layer 609.

[0038] After the activation process, the optical interposer 100 and the first semiconductor device 601 may be cleaned using, for example, chemical cleaning, and then the first semiconductor device 601 is aligned and placed in physical contact with the optical interposer 100. The optical interposer 100 and the first semiconductor device 601 are then subjected to heat treatment and contact pressure to bond the optical interposer 100 and the first semiconductor device 601. For example, the optical interposer 100 and the first semiconductor device 601 may be subjected to a pressure of about 200 kPa or less and a temperature between about 25° C. and about 250° C. to fuse the optical interposer 100 and the first semiconductor device 601. The optical interposer 100 and the first semiconductor device 601 may then be subjected to a temperature at or above the eutectic point of the material for the first bonding pad 507 and the third bonding pad 611, for example, between about 150° C. and about 650° C. to fuse the metals. In this manner, the optical interposer 100 and the first semiconductor device 601 form a dielectric-to-dielectric and metal-to-metal bonded device. In some embodiments, the bonded dies are subsequently baked, annealed, pressed, or otherwise processed to strengthen or complete the bond.

[0039] In addition, although specific processes have been described to initiate and strengthen bonding, these descriptions are intended to be illustrative and are not intended to limit the embodiments. Instead, any suitable combination of baking, annealing, pressing, or a combination of processes may be utilized. All such processes are fully intended to be included within the scope of the embodiments.

[0040] Figure 6Additionally shown, once the first semiconductor device 601 has been bonded, a first gap fill material 613 is deposited to fill the space around the first semiconductor device 601 and provide additional support. In an embodiment, the first gap fill material 613 can be a material deposited to fill and overfill the space around the first semiconductor device 601, such as silicon oxide, silicon nitride, silicon oxynitride, combinations of these, etc. However, any suitable material and deposition method can be utilized.

[0041] Once the first gap-fill material 613 has been deposited, the first gap-fill material 613 may be planarized to expose the first semiconductor device 601. In an embodiment, the planarization process may be a chemical mechanical planarization process, a grinding process, etc. However, any suitable planarization process may be utilized.

[0042] Figure 7 Attachment of the first support substrate 701 to the first semiconductor device 601 and the first gap filling material 613 is shown. In an embodiment, the first support substrate 701 may be a support material transparent to the wavelength of light desired to be used, such as silicon, and may be bonded using, for example, an adhesive ( Figure 7 However, in other embodiments, the first support substrate 701 may be bonded to the first semiconductor device 601 and the first gap filling material 613 using, for example, a bonding process. Any suitable method of attaching the first support substrate 701 may be used.

[0043] Figure 8 The first substrate 101 and optionally the first insulating layer 103 are shown removed, thereby exposing the first active layer 201 of the first optical component 203. In an embodiment, the first substrate 101 and the first insulating layer 103 may be removed using a planarization process, such as a chemical mechanical polishing process, a grinding process, one or more etching processes, combinations of these, etc. However, any suitable method may be used to remove the first substrate 101 and / or the first insulating layer 103.

[0044] Once the first substrate 101 and the first insulating layer 103 have been removed, the second active layer 801 of the fourth optical component 803 may be formed on the back side of the first active layer 201. In an embodiment, the second active layer 801 of the fourth optical component 803 may be formed using the second optical component 503 (described above with respect to the first metallization layer 501) with the first metallization layer 501. Figure 5 For example, the second active layer 801 of the fourth optical component 803 may be formed of alternating layers of a cladding material such as silicon oxide and a core material such as silicon nitride formed using deposition and patterning processes to form an optical component such as a waveguide.

[0045] In addition, in an embodiment, the fourth optical component 803 of the second active layer 801 may include an optical coupler to receive the optical signal 1017 ( Figure 8 Not seen in, but below in Fig. 10A 801 and transmits the optical signal 1017 into the second active layer 801 and transmits the optical signal 1017 out of the second active layer 801. For example, the fourth optical component 803 may include one or more edge couplers (by Figure 8 805 in the figure). The one or more first edge couplers 805 may include one or more levels of edge couplers, wherein each level of first edge couplers 805 provides a plurality of optical paths, such as between about 20 and 80 optical paths, such as 40 optical paths. However, any suitable coupler may be utilized.

[0046] Fig. 9 The formation of a first device through via (TDV) 901 and the formation of a third bonding layer 903 to form a first optical package 900 is shown, which in some embodiments is a compact universal photon engine (COUPE). In an embodiment, the first device through via 901 extends through the second active layer 801 and the first active layer 201 to provide a fast path for power, data, and ground through the optical interposer 100. In an embodiment, the first device through via 901 can be formed by initially forming a device through via opening in the optical interposer 100. The device through via opening can be formed by applying and developing a suitable photoresist (not shown) and removing the exposed portions of the second active layer 801 and the optical interposer 100.

[0047] Once the device via opening has been formed in the optical interposer 100, the device via opening may be lined with a liner. The liner may be, for example, an oxide formed from tetraethyl orthosilicate (TEOS) or silicon nitride, although any suitable dielectric material may alternatively be used. The liner may be formed using a plasma enhanced chemical vapor deposition (PECVD) process, although other suitable processes such as physical vapor deposition or thermal processes may also be used.

[0048] Once the liner has been formed along the sidewalls and bottom of the device via opening, a barrier layer (also not shown separately) can be formed, and the remainder of the device via opening can be filled with a first conductive material. The first conductive material can include copper, but other suitable materials can be utilized, such as aluminum, alloys, doped polysilicon, combinations thereof, and the like. The first conductive material can be formed by electroplating copper onto a seed layer (not shown), filling and overfilling the device via opening. Once the device via opening has been filled, excess liner, barrier layer, seed layer, and first conductive material on the outside of the device via opening can be removed by a planarization process such as chemical mechanical polishing (CMP), but any suitable removal process can be used.

[0049] Optionally, in some embodiments, once the first device via 901 has been formed, a second metallization layer ( Fig. 9 In an embodiment, the second metallization layer may be formed as described above with respect to the first metallization layer 501, such as alternating layers of dielectric material and conductive material using a damascene process, a dual damascene process, etc. In other embodiments, the second metallization layer may be formed using a plating process to form and shape the conductive material, and then cover the conductive material with a dielectric material. However, any suitable structure and manufacturing method may be utilized.

[0050] The third bonding layer 903 is formed to provide electrical connection between the optical interposer 100 and a subsequently attached device. In an embodiment, the third bonding layer 903 may be similar to the first bonding layer 505, such as having a third bonding pad 909 (similar to the first bonding pad 507) and even a fifth optical component 911 (similar to the third optical component 511). However, any suitable device may be utilized.

[0051] Fig. 9 The placement of the first external connector 913 is additionally shown, and the first external connector 913 can be formed to provide a conductive area for contact between the third bonding pad 909 and other external devices. The first external connector 913 can be a conductive bump (e.g., C4 bump, ball grid array, micro bump, etc.) or a conductive column using materials such as solder and copper. In an embodiment where the first external connector 913 is a contact bump, the first external connector 913 may include a material such as tin, or other suitable materials such as silver, lead-free tin or copper. In an embodiment where the first external connector 913 is a tin solder bump, the first external connector 913 can be formed by initially forming a tin layer by common methods such as evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the tin layer has been formed on the structure, reflow can be implemented to shape the material into a desired bump shape.

[0052] Of course, while the use of the first external connector 913 is one embodiment that can be used to provide a connection for the first optical package 900, this is intended to be illustrative and not intended to limit the embodiments. Instead, any suitable method of physically connecting, electrically connecting, and in some instances optically connecting the first optical package 900, such as dielectric to dielectric and metal to metal bonding, can also be utilized. Any suitable method of bonding the first optical package 900 can be used.

[0053] Fig. 10A The first connection unit 1000 is shown mounted to the first optical package 900. In an embodiment, the first connection unit 1000 includes a first fiber array unit 1003 and a first lens reflector module (LRM) 1001, wherein the first fiber array unit 1003 provides an inlet and an outlet for an optical signal 1017 to the first optical package 900. In an embodiment, the first fiber array unit 1003 includes a fiber array substrate material, such as glass, a plastic material, or air (in an example where a housing material is present - not separately shown). However, any suitable material may be utilized.

[0054] In the fiber array substrate material, a plurality of openings are formed for alignment of individual optical fibers. The individual optical fibers are placed into the individual openings and, if desired, can be cleaved. In certain embodiments, the optical fibers can be cleaved using a process such as laser cleaving. However, any suitable process can be used to cleave the optical fibers.

[0055] The first lens reflector module 1001 is attached to the first optical fiber array unit 1003. In an embodiment, the first lens reflector module 1001 includes a support structure 1005, and after the first lens reflector module 1001 is placed, a gap 1007 is formed or located between the support structure 1005 and the first optical package 900. In an embodiment, the support structure 1005 includes a material similar to the optical fiber array substrate material, such as a transparent medium such as glass, plastic material, silicon, metal or any other suitable transparent material, and can be formed integrally with the optical fiber array substrate material, or can be formed separately and attached to the first optical fiber array unit 1003.

[0056] A spacer 1007 is formed or located between the support structure 1005 and the first optical package 900 to allow for the location of the first lens 1013 (described further below). In an embodiment, the spacer 1007 can be formed by simply placing the first connection unit 1000 so that the support structure 1005 is located a distance away from the sidewalls of the first optical package 900.

[0057] Alternatively, in some embodiments, the spacer 1007 may be formed with the aid of a housing 1017. In an embodiment, the housing 1017 may surround the spacer 1007 so that when the first connection unit 1000 is placed, the housing 1017 provides easy positioning of the spacer 1007. The housing 1017 may be formed using a material such as glass, but any suitable material may be used.

[0058] The first reflector 1011 and / or other lenses (not shown separately) are located within the support structure 1005. The first reflector 1011 or the lens may be placed or formed within the support structure 1005. In an embodiment, the first reflector 1011 may include one or more single reflectors, or may include a series of one or more reflectors that are part of an integral structure (in Fig. 10A In some embodiments, the first reflector 1011 may be a 45° reflector or a prism, but any suitable orientation may be utilized.

[0059] In embodiments where the first reflector 1011 is pre-formed, the first reflector 1011 may be placed and bonded into one or more openings located within the support structure 1005. Any suitable method of placing and retaining the first reflector 1011 may be used.

[0060] In embodiments where the first reflector 1011 is formed within the support structure 1005, the first reflector 1011 may be formed by initially patterning the support structure 1005 to form a recess. In embodiments, the recess may be formed using one or more photolithography masking and etching processes, such as one or more wet etching processes or dry etching processes. However, any suitable process may be utilized.

[0061] Once the groove has been formed, the first reflector 1011 can be formed along the sidewalls of the groove. In an embodiment, the first reflector 1011 can be a single layer of a reflective material, such as aluminum copper, copper, gold, aluminum, titanium nitride, combinations of these, etc., or can be a multilayer structure, such as a Bragg reflector including alternating layers of different materials, such as alternating layers of silicon dioxide and amorphous silicon. The independent material of the first reflector 1011 can be deposited using any suitable method, such as chemical vapor deposition, physical vapor deposition, plating, combinations of these, etc., and then the independent layer can be further patterned (e.g., to remove horizontal portions of the deposited material) using, for example, photolithographic masking and etching processes. However, any suitable material and method can be used to form the first reflector 1011 along the sidewalls of the groove.

[0062] In addition, if the formation of the first reflector 1011 does not completely fill the groove, the groove can be filled and planarized. In an embodiment, the groove can be filled and / or overfilled with a material similar to the support structure 1005 deposited using a method such as chemical vapor deposition, followed by a planarization process such as a chemical mechanical polishing process. However, any suitable material and any suitable process can be utilized.

[0063] The first lens 1013 is placed within the gap 1007 and is positioned to modulate the optical signal 1017 between the first reflector 1011 and the first optical package 900. In an embodiment, the first lens 1013 can be formed using materials such as silicon, glass, combinations of these, etc. In addition, the first lens 1013 can be formed to have a diameter at least twice the mode field diameter of the waveguide of the first edge coupler 805 (e.g., about 9.8 μm). However, any suitable material, combination of materials, and dimensions can be utilized.

[0064] In an embodiment, the first lens 1013 may be housed within a glass housing of the first connection unit 1000, arranged along the Y axis, and suspended in parallel from the upper limit of the spacer 1007 using a connecting rod 1015. In an embodiment, the connecting rod 1015 may be a material similar to the fiber array substrate material, such as a transparent medium such as glass or plastic material, and may be integrally formed with the fiber array substrate material, or may be formed separately and attached to the first fiber array unit 1003. In other embodiments, the connecting rod may be a separate material and may be attached to the first fiber array unit 1003 using, for example, an adhesive. Any suitable material and any suitable attachment method may be used for the connecting rod 1015.

[0065] The first lens 1013 can be connected to the connecting rod 1015 and placed in the space 1007, wherein the first lens 1013 is surrounded by an ambient environment such as air. In an embodiment, the first lens 1013 can be connected using, for example, an adhesive material (such as glue) (not shown separately). However, any suitable material and attachment method can be used.

[0066] The first optical fiber array unit 1003 can be connected to the first optical package 900 so that the first lens 1013 is located on the edge of the first optical package 900. In certain embodiments, the first optical fiber array unit 1003 is connected using, for example, optical glue (not shown separately). However, in other embodiments, the first optical fiber array unit 1003 can be connected using a fixing bracket ( Fig. 10A Not shown, but below Fig. 15C ), pins, clamps, press fits, combinations of these, etc. Any suitable process or material may be used to connect the first optical fiber array unit 1003 to the first optical package 900.

[0067] Fig. 10B A close-up view of the relative position between the first lens 1013 and the first edge coupler 805 (located within the second active layer 801) is shown. In this particular embodiment, the first lens 1013 can be positioned at a first distance D away from the first edge coupler 805. 1 , where the first distance D 1 Less than about 5 μm. In addition, the first lens 1013 may be positioned such that the divergence angle θ is between about 5° and about 10°. However, any suitable position may be utilized.

[0068] By utilizing the first connection unit 1000 with the first fiber array unit 1003 and the first lens 1013, a first optical package 900 with an edge coupler configuration can be obtained. Therefore, for advanced packaging schemes, such as the CoWoS scheme described herein, high bandwidth can be obtained. Therefore, a better performing device can be obtained.

[0069] Now return to Fig. 10A During operation (eg, after a subsequent packaging process), the first fiber array unit 1003 receives an optical signal (at Fig. 10A The optical signal 1017 is received by the first reflector 1011 (indicated by the line labeled 1017 in FIG. 1 ), and directs the optical signal 1017 to the first reflector 1011 (using any combination of lenses and reflectors). The first reflector 1011 receives the optical signal 1017 and redirects it to the first lens 1013, which collects the optical signal 1017 and directs the optical signal 1017 to the first edge coupler 805.

[0070] The optical signal 1017 generated by the first optical package 900 can then be directed to the first lens 1013 through the first edge coupler 805, which collects the optical signal 1017 and redirects the optical signal 1017 to the first reflector 1011. The first reflector 1011 redirects the optical signal 1017 to the first fiber array unit 1003, where the optical signal 1017 enters the optical fiber and is transmitted out of the device.

[0071] Fig.11 As shown, once the first connection unit 1000 ( Fig.11 ) has been mounted on the first optical package 900, the first optical package 900 can be attached to the interposer substrate 1101, the interposer substrate 1101 is used to couple the first optical package 900 with other devices to form, for example, a chip on a wafer on a substrate Device. In an embodiment, the interposer substrate 1101 includes a semiconductor substrate, a third metallization layer, a third device through hole (TDV) (all of which are not shown for clarity), and a second external connector 1103. The semiconductor substrate may include an active layer of a doped or undoped bulk silicon or a silicon-on-insulator (SOI) substrate. Typically, the SOI substrate includes a layer of semiconductor material such as silicon, germanium, silicon germanium, SOI, silicon germanium on insulator (SGOI), or a combination thereof. Other substrates that may be used include multilayer substrates, gradient substrates, or hybrid orientation substrates.

[0072] Optionally, a first active device (not shown separately) may be added to the semiconductor substrate. The first active device includes a variety of active and passive devices that may be used to generate the desired structural and functional requirements for the design of the semiconductor substrate, such as capacitors, resistors, inductors, etc. The first active device may be formed in or on the semiconductor substrate using any suitable method.

[0073] The third metallization layer is formed over the semiconductor substrate and the first active device of the interposer substrate 1101 and is designed to connect the various devices to form a functional circuit. In an embodiment, the third metallization layer of the interposer substrate 1101 is formed of alternating layers of dielectric materials (e.g., low-k dielectric materials, very low-k dielectric materials, ultra-low-k dielectric materials, combinations of these, etc.) and conductive materials, and can be formed by any suitable process (such as deposition, damascene, dual damascene, etc.). However, any suitable material and process may be utilized.

[0074] In addition, at any desired point in the manufacturing process, a second TDV can be formed within one or more layers of the semiconductor substrate and (if desired) the third metallization layer to provide an electrical connection from the front side of the semiconductor substrate to the back side of the semiconductor substrate. In an embodiment, the second TDV can be formed by initially forming a through device via (TDV) opening in any one of the semiconductor substrate and (if desired) the third metallization layer above (e.g., after the desired third metallization layer has been formed, but before the next third metallization layer above is formed). The TDV opening can be formed by applying and developing a suitable photoresist and removing portions of the underlying material exposed to a desired depth. The TDV opening can be formed to extend into the semiconductor substrate to a depth greater than the final desired height of the semiconductor substrate.

[0075] Once the TDV opening has been formed in the semiconductor substrate and / or any third metallization layer, the TDV opening may be lined with a liner. The liner may be an oxide formed, for example, from tetraethyl orthosilicate (TEOS) or silicon nitride, but any suitable dielectric material may be used. The liner may be formed using a plasma enhanced chemical vapor deposition (PECVD) process, but other suitable processes may be used, such as physical vapor deposition or thermal processes.

[0076] Once the liner has been formed along the sidewalls and bottom of the TDV opening, a barrier layer can be formed and the remainder of the TDV opening can be filled with a first conductive material. The first conductive material can include copper, but other suitable materials such as aluminum, alloys, doped polysilicon, combinations thereof, etc. can be utilized. The first conductive material can be formed by electroplating copper onto the seed layer, filling and overfilling the TDV opening. Once the TDV opening has been filled, the excess liner, barrier layer, seed layer, and first conductive material outside the TDV opening can be removed by a planarization process such as chemical mechanical polishing (CMP), but any suitable removal process can be used.

[0077] Once the TDV opening has been filled, the semiconductor substrate may be thinned until the second TDV has been exposed. In an embodiment, the semiconductor substrate may be thinned using, for example, a chemical mechanical polishing process, a grinding process, etc. Further, once exposed, the second TDV may be recessed using, for example, one or more etching processes (such as a wet etching process) to recess the semiconductor substrate such that the second TDV extends out of the semiconductor substrate.

[0078] In an embodiment, the second external connector 1103 can be placed and can be, for example, a ball grid array (BGA) including a eutectic material such as solder, but any suitable material can be used. Optionally, an under-bump metallization layer or an additional metallization layer can be utilized between the third metallization layer and the second external connector 1103. In an embodiment where the second external connector 1103 is a solder bump, the second external connector 1103 can be formed using a ball drop method, such as a direct ball drop process. In another embodiment, the solder bump can be formed by initially forming a tin layer by any suitable method such as evaporation, electroplating, printing, solder transfer, and then implementing reflow to shape the material into a desired bump shape. Once the second external connector 1103 has been formed, testing can be implemented to ensure that the structure is suitable for further processing.

[0079] Once the interposer substrate 1101 has been formed, the first optical package 900 can be attached to the interposer substrate 1101. In an embodiment, the first optical package 900 can be attached to the interposer substrate 1101 by aligning the first external connector 913 with the conductive portion of the interposer substrate 1101. Once aligned and in physical contact, the first external connector 913 is reflowed by increasing the temperature of the first external connector 913 above the eutectic point of the first external connector 913, thereby transforming the material of the first external connector 913 into a liquid phase. Once reflowed, the temperature is reduced to transform the material of the first external connector 913 back into a solid phase, thereby bonding the first optical package 900 to the interposer substrate 1101.

[0080] Optionally, a first underfill material (not shown separately) may be placed. The first underfill material may reduce stress and protect joints created by reflow of the first external connector 913. The first underfill material may be formed by a capillary flow process after the first optical package 900 has been attached.

[0081] Fig.11 The second semiconductor device 1105 is additionally shown bonded to the interposer substrate 1101. In some embodiments, the second semiconductor device 1105 is an electronic integrated circuit (EIC), such as an XPU device. Of course, although the second semiconductor device 1105 is an XPU device in one embodiment, the embodiment is not limited to the second semiconductor device 1105 being an XPU device. Instead, the second semiconductor device 1105 can be any suitable semiconductor device, such as a processor die, a memory die, or other types of functional dies. In a particular embodiment, the second semiconductor device 1105 can be a logic die, a 3DIC die, a CPU, a GPU, a SoC die, a MEMS die, an HBM die, a combination of these, and the like. Any suitable device having any suitable function can be used, and all such devices are fully intended to be included within the scope of the embodiment.

[0082] In an embodiment, the second semiconductor device 1105 can be bonded to the interposer substrate 1101 using, for example, a third external connection 1107. The third external connection 1107 can be a conductive bump (e.g., a ball grid array, a microbump, etc.) or a conductive column using a material such as solder and copper. In an embodiment where the third external connection 1107 is a contact bump, the third external connection 1107 can include a material such as tin, or other suitable materials such as silver, lead-free tin, or copper. In an embodiment where the third external connection 1107 is a tin solder bump, the third external connection 1107 can be formed by initially forming a tin layer by common methods such as evaporation, electroplating, printing, solder transfer, ball placement, etc. Once the tin layer has been formed on the structure, reflow can be implemented to shape the material into a desired bump shape.

[0083] Furthermore, once the third external connection 1107 has been placed, the second semiconductor device 1105 is aligned with the interposer substrate 1101. Once aligned and in physical contact, the third external connection 1107 is reflowed by increasing the temperature of the third external connection 1107 above the eutectic point of the third external connection 1107, thereby transforming the material of the third external connection 1107 into a liquid phase. Once reflowed, the temperature is reduced to transform the material of the third external connection 1107 back into a solid phase, thereby bonding the second semiconductor device 1105 to the interposer substrate 1101.

[0084] Optionally, an underfill material (not shown separately) may be placed. The underfill material may reduce stress and protect the joints created by the reflow of the third external connection 1107 and the first external connection 913. The underfill material may be formed by a capillary flow process after attaching the first optical package 900 and the second semiconductor device 1105.

[0085] Once the second semiconductor device 1105 and the first optical package 900 have been bonded to the interposer substrate 1101, the interposer substrate 1101 can be bonded to the second substrate 1109 with, for example, the second external connector 1103. In an embodiment, the second substrate 1109 can be a packaging substrate, which can be a printed circuit board (PCB), etc. The second substrate 1109 can include one or more dielectric layers and conductive components, such as wires and vias. In some embodiments, the second substrate 1109 can include vias, active devices, passive devices, etc. The second substrate 1109 can also include conductive pads formed at the upper and lower surfaces of the second substrate 1109.

[0086] The second external connectors 1103 may be aligned with corresponding conductive connections on the second substrate 1109. Once aligned, the second external connectors 1103 may then be reflowed to bond the second substrate 1109 to the interposer substrate 1101. However, any suitable bonding process may be used to connect the interposer substrate 1101 to the second substrate 1109.

[0087] In addition, the second substrate 1109 can be prepared for further connection by placing a fourth external connection (not shown separately) on the side of the second substrate 1109 opposite the first optical package 900. In an embodiment, the fourth external connection can be formed using a process and materials similar to the second external connection 1103. However, any suitable materials and processes can be utilized.

[0088] Fig.12A top view of an OOI device having a second substrate 1109 and an interposer substrate 1101, a second semiconductor device 1105, a first optical package 900, and a first connection unit 1000 is shown. In an embodiment, there may be a plurality of first optical packages 900 connected to a corresponding plurality of first connection units 1000, such as eight first optical packages 900 connected to eight first connection units 1000. However, any suitable number may be utilized.

[0089] In addition, as can be seen in this view, the first optical package 900 can be spaced apart from the second semiconductor device 1105 to minimize delay and improve the overall performance of the device. In a particular embodiment, the first optical package 900 can each be spaced apart from the second semiconductor device 1105 by a second distance D less than about 100 μm. 2 However, any suitable distance may be utilized.

[0090] By using the first connection unit 1000 with the first optical package 900, the interposer substrate 1101 and the second substrate 1109, an optical device on an interposer (OOI) with an edge coupler can be obtained. Therefore, a COUPE with an edge coupler (COUPE-EC) can provide enhanced bandwidth. In addition, this is obtainable for advanced packaging solutions such as CoWoS solutions.

[0091] Fig.13A Another embodiment is shown, where instead of positioning one or more of the first lenses 1013 to send and receive optical signals 1017 only to the second active layer 801, there may be a lens positioned to also send optical signals 1017 to the first active layer 201 (e.g., Fig.13A ), edge couplers within the first metallization layer 501 and / or the first bonding layer 505 (in Fig.13A 1003) and receives the optical signal 1017 from the edge coupler located in the first active layer 201, the first metallization layer 501 and / or the first bonding layer 505. In this embodiment, the second lens 1301 can be similar to the first lens 1013, such as connected by a connecting rod 1015, but located at a different distance from the first optical fiber array unit 1003. However, any suitable lens and any suitable connection method can be utilized.

[0092] Fig. 13BA plurality of first lenses 1013 and second lenses 1301 are shown. In the illustrated embodiment, the first lenses 1013 (e.g., lenses located in the lower level of the first connection unit 1000) are vertically aligned with the second lenses 1301 (e.g., lenses located in the upper level of the first connection unit 1000). In addition, in this aligned embodiment, the first reflectors 1011 may also be similarly aligned with each other to align with the first lenses 1013 and the second lenses 1301.

[0093] Fig. 13C Another embodiment is shown, in which the first lens 1013 and the second lens 1301 are not as described above. Fig. 13B In the embodiment described above, the first reflectors 1011 are aligned with each other as described above, but are offset to be misaligned with each other. In addition, in this misaligned embodiment, the first reflectors 1011 can also be misaligned with each other to be aligned with the first lens 1013 and the second lens 1301. Any suitable arrangement of the first lens 1013 and the second lens 1301 can be used.

[0094] Fig.14 Another embodiment is shown, in which the first connection unit 1000 is attached to the optical intermediary layer 100 (in Fig.14 1, but includes a second active layer 801 and a first external connection 913). However, in this embodiment, the first semiconductor device 601 is not connected to the optical interposer 100. Instead, the first semiconductor device 601 is connected to the interposer substrate 1101 (via, for example, a fourth external connection 1401 similar to the third external connection 1107) and communicates with the optical interposer 100 through the interposer substrate 1101. In addition, in this embodiment, the second semiconductor device 1105 can be bonded to the second substrate 1109 instead of the interposer substrate 1101.

[0095] FIG. 15A to FIG. 15C Yet another embodiment is shown in which the first optical package 900 is connected to the interposer substrate 1101, but in which the first optical package 900 is connected after the sealing process. In this embodiment, the second semiconductor device 1105 is bonded to the interposer substrate 1101 along with the third semiconductor device 1501 (which may be similar to the second semiconductor device 1105). In addition, the second semiconductor device 1105 and the third semiconductor device 1501 may be connected through the interposer substrate 1101 through, for example, a local silicon interconnect (LSI) die 1503 located within a metallization layer of the interposer substrate 1101. However, any suitable connection may be utilized.

[0096] Furthermore, in this embodiment, before sealing, first connectors 1505 may be formed on the interposer substrate 1101. In an embodiment, the first connectors 1505 may be conductive pillars, such as copper pillars, but any suitable connectors may be utilized, such as solder connectors or combinations of connectors.

[0097] Once the second semiconductor device 1105 and the third semiconductor device 1501 have been attached, and the first connector 1505 has been formed, the second semiconductor device 1105, the third semiconductor device 1501, and the first connector 1505 are sealed with a sealant 1507. In an embodiment, the sealant 1507 can be a material such as a molding compound placed using an injection molding process. Once in place, the molding compound can be cured and planarized. However, any suitable material and process can be used.

[0098] Fig. 15B The sealant 1507 is trimmed and an opening is formed through the sealant 1507 to expose the first connector 1505. In an embodiment, the opening can be made using a saw (in Fig. 15B The opening may be formed by a dotted box (indicated by the dotted box labeled 1509) or may be formed using one or more masking and etching processes. However, any suitable method of forming an opening may be utilized.

[0099] Fig. 15C 15. As shown, once the first connector 1505 has been exposed, the first optical package 900 can be connected to the first connector 1505. In an embodiment, the first optical package 900 can be as described above with respect to Fig.11 The bonding may be performed as described (eg, by using first external connector 913). However, any suitable bonding process may be utilized.

[0100] In addition, the first connection unit 1000 having the first optical fiber array unit 1003 and the first lens reflector module (LRM) 1001 and the first lens 1013 (in Fig. 15C 1000) is attached to the first optical package 900. In one embodiment, the first optical fiber array unit 1003 and the first LRM 1001 of the first connection unit 1000 are attached to each other before the first optical package 900 is placed, while in other embodiments, the first optical fiber array unit 1003 and the first LRM 1001 of the first connection unit 1000 are attached to each other after the first optical package 900 is placed.

[0101] In certain embodiments, the first connection unit 1000 may be connected using an adhesive 1509. In an embodiment, the adhesive 1509 may be used to help bond the first optical fiber array unit 1003 to, for example, the first support substrate 701 (in Fig. 15CHowever, any suitable method of bonding the first optical fiber array unit 1003 may be utilized.

[0102] Fig.16 Another embodiment of the above process of attaching a first connection unit 1000 having a first optical fiber array unit 1003 and a first lens reflector module 1001 is shown. In this embodiment, in a first step 1601, the first optical fiber array unit 1003 of the first connection unit 1000 is first aligned with a first optical package 900 (e.g., a COUPE). In a second step 1603, the first connection unit 1000 having the first optical fiber array unit 1003 and the first lens reflector module 1001 is temporarily attached to the first optical package 900 using, for example, a fixing bracket. In a third step 1605, the first connection unit 1000 having the first optical fiber array unit 1003 and the first lens reflector module 1001 is separated from the fixing bracket, and the remaining part of the packaging process is performed (e.g., the above description of Figures 1 to 15C In a fourth step 1607, once the remainder of the packaging process has been performed, the first connection unit 1000 having the first optical fiber array unit 1003 and the first lens reflector module 1001 can be reattached to the fixing bracket to connect the first connection unit 1000 with the first optical package 900. However, any suitable steps in any suitable order may be utilized.

[0103] By utilizing the first connection unit 1000 and the first lens 1013 with the first fiber array unit 1003 as described herein, a first optical package 900 having an edge coupler configuration and not using a lower performing grating coupler can be obtained. Thus, advanced packaging solutions such as CoWoS can be obtained, which can achieve higher bandwidths than can be obtained using grating couplers. With such higher bandwidths, overall better performance can be obtained for such devices.

[0104] In an embodiment, a method for manufacturing an optical device, the method comprising: providing a first optical package; and attaching a first connection unit to the first optical package, the first connection unit comprising: a fiber array unit; a first reflector; and a first lens, located in a first interval, wherein the first interval is located between the first reflector and an edge coupler in the optical package. In an embodiment, the first connection unit also includes a second lens located at a different distance from the fiber array unit than the first reflector. In an embodiment, the first lens is aligned with the second lens. In an embodiment, the first lens is not aligned with the second lens. In an embodiment, the method also includes bonding the first optical package to an interposer substrate. In an embodiment, bonding the first optical package comprises bonding the first optical package to a conductive post sealed in a sealant. In an embodiment, the first lens is connected to the fiber array unit via a connecting rod.

[0105] In another embodiment, a method of manufacturing an optical device includes: providing a first optical package having an edge coupler; and positioning a lens adjacent to the edge coupler, the lens being connected to a fiber array unit by a connecting rod. In an embodiment, the fiber array unit is attached to a lens reflector material, and wherein the first reflector is located within the lens reflector material. In an embodiment, the first optical package includes an electronic integrated circuit bonded to an optical interposer. In an embodiment, the method further includes: bonding the first optical package to an interposer substrate; and bonding the semiconductor device to the interposer substrate. In an embodiment, the method further includes: separating the fiber array unit from the first optical package; connecting the first optical package to the interposer substrate; and reattaching the fiber array unit to the first optical package after connecting the first optical package. In an embodiment, the method further includes: removing the sealant to expose the conductive post; and bonding the first optical package to the conductive post. In an embodiment, the method further includes positioning a second lens adjacent to a second edge coupler, the second lens being misaligned with the lens.

[0106] In yet another embodiment, the optical device comprises: an optical interposer having a first edge coupler; and a connection unit attached to the optical interposer, the connection unit comprising: a fiber array unit; a connecting rod connected to the fiber array unit; and a first lens attached to the connecting rod, the first lens being surrounded by an ambient atmosphere. In an embodiment, the connection unit further comprises a reflector aligned with the first lens and the first edge coupler. In an embodiment, the connection unit further comprises a second lens, the first lens and the second lens being located at different distances from the fiber array unit. In an embodiment, the first lens is aligned with the second lens. In an embodiment, the first lens is not aligned with the second lens. In an embodiment, the optical device further comprises: an interposer substrate bonded to the optical interposer; and a semiconductor device bonded to the interposer substrate.

[0107] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A method for manufacturing an optical device, the method comprising: providing a first optical package; as well as Attaching a first connection unit to the first optical package, the first connection unit comprising: Optical fiber array unit; a first reflector; and A first lens is located in a first spacer, wherein the first spacer is located between the first reflector and an edge coupler in the optical package.

2. The method according to claim 1, wherein: The first connection unit further includes a second lens located at a different distance from the optical fiber array unit than the first reflector.

3. The method according to claim 2, wherein: The first lens is aligned with the second lens.

4. The method according to claim 1, wherein: The first lens is misaligned with the second lens. 5 . The method of claim 1 , further comprising bonding the first optical package to an interposer substrate.

6. The method according to claim 5, wherein: Bonding the first optical package includes bonding the first optical package to conductive posts encapsulated within an encapsulant.

7. The method according to claim 1, wherein: The first lens is connected to the optical fiber array unit through a connecting rod.

8. A method for manufacturing an optical device, the method comprising: providing a first optical package having an edge coupler; as well as A lens is positioned adjacent to the edge coupler, the lens being connected to the fiber array unit via a connecting rod.

9. The method according to claim 8, wherein: The fiber array unit is attached to a lens reflector material, and wherein the first reflector is located within the lens reflector material.

10. An optical device comprising: an optical interposer having a first edge coupler; as well as A connection unit, attached to the optical intermediary layer, the connection unit comprising: Optical fiber array unit; a connecting rod connected to the optical fiber array unit; and A first lens is attached to the connecting rod, the first lens being surrounded by ambient atmosphere.

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