Intelligent manufacturing solution for wastewater treatment

Abstract

The present disclosure generally relates to methods and systems for collecting waste liquids. A system controller for controlling operation of at least a portion of a system is disclosed. The controller has a CPU. The manufacturing facility includes a first processing system in which a fluid is dispensed for processing material on a part. The first discharge tube is configured to collect the treatment fluid as a waste liquid after the part is treated. The manufacturing facility also includes a waste collection system fluidly coupled to the system discharge tube. The waste collection system has two or more valves configured to couple the system discharge tube and two or more facility discharge tubes. Each facility drain is uniquely coupled to one of the two or more valves. The CPU is configured to operate the valve between open and closed states in response to fluid entering the system drain.

Description

Technical Field

[0001]

[0013] Embodiments described herein relate generally to systems and methods for processing semiconductor substrates in electronic device manufacturing processes, and more particularly to systems for collecting wastewater and waste liquids used in semiconductor substrate manufacturing. Background Art

[0002] Manufacturing facilities utilize processing systems to manufacture high-density integrated circuits, such as semiconductor devices. For example, a chemical mechanical planarization system is a processing system used to manufacture semiconductor devices. A CMP system planarizes or polishes a layer of material deposited on a substrate. A typical CMP process includes contacting the material layer of the substrate to be planarized with a polishing pad in the presence of a polishing fluid, and moving the polishing pad, the substrate, or both, thereby generating relative movement between the surface of the material layer and the polishing pad. Material on the surface of the material layer in contact with the polishing pad is removed via a combination of chemical and mechanical activity, which is at least partially provided by the polishing fluid. Commonly used polishing fluids include slurries containing abrasive particles, such as colloids or suspensions, reactive liquid (non-abrasive) slurries, and non-abrasive or low-abrasive polishing fluids used in conjunction with fixed abrasive polishing pads having abrasive particles disposed therein.

[0003] Typically, polishing fluids are carefully designed to provide the desired chemical and mechanical polishing performance characteristics and to disperse and maintain the abrasive particles in a colloid or relatively stable suspension. Not all polishing fluids used during CMP require the same treatment, or even do not require any treatment when the polishing fluid is used and collected as waste. Some polishing fluids contain metals and other materials, so after use, the discarded polishing fluid needs to be treated, while other polishing fluids can be recycled, reused, or disposed of without treatment. When the fluids are collected after polishing, the collected fluids are treated together to remove most of the hazardous waste. However, it is expensive to treat waste fluids in this way. The waste fluid problem is not limited to CMP systems in manufacturing facilities.

[0004] Therefore, there is a need in the semiconductor device manufacturing art for improved waste fluid transport and methods of handling the same. Summary of the invention

[0005] The present disclosure generally relates to methods and systems for collecting waste liquids. A system controller for controlling the operation of at least a portion of a manufacturing facility is disclosed. The controller has a CPU. The manufacturing facility includes a first processing system in which a fluid is distributed for processing material on a part. A first discharge pipe is configured to collect the processing fluid as waste liquid after processing the part. The manufacturing facility also includes a waste collection system fluidically coupled to the system discharge pipe. The waste collection system has two or more valves that are configured to couple the system discharge pipe and two or more facility discharge pipes. Each facility discharge pipe is uniquely coupled to one of the two or more valves. The CPU is configured to operate the valve between an open and a closed state in response to the fluid entering the system discharge pipe.

[0006] In another embodiment, a method of collecting waste fluid is disclosed. The method includes dispensing a treatment fluid into a treatment system of a manufacturing facility according to a treatment recipe for treating a material on a part. The treatment fluid is removed from the treatment system as waste fluid. The waste fluid is collected using a waste collection system, wherein the waste collection system couples a valve box to two or more facility drains. The fluid waste is characterized. In response to determining a characteristic of the fluid waste, the waste fluid is directed to a first valve in the valve box coupled to a first drain.

[0007] BRIEF DESCRIPTION OF THE DRAWINGS

[0008] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are achieved, a more particular description of the present disclosure, briefly summarized above, may be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting of its scope, as the present disclosure may admit to other equally effective embodiments.

[0009] Figure 1 is a schematic side view of a treatment system configured with multiple drains for selectively removing spent fluids, according to an embodiment.

[0010] Figure 2 is a schematic diagram of a waste collection system that may be used with a drain of a treatment system, according to an embodiment.

[0011] Figure 3 is a schematic diagram of a controller unit configured to control a treatment system and a waste collection system according to an embodiment.

[0012] Figure 4 is a flow chart illustrating a method for collecting waste liquid from a portion of a manufacturing facility.

[0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of each embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0014]

[0011] Embodiments of the present disclosure generally provide a system for controlling waste liquid collection from a processing system used in manufacturing an electronic device fabrication process.

[0015] For example, the processing system can be a chemical mechanical polishing (CMP) system. CMP distributes a polishing fluid onto the surface of a polishing pad mounted on a rotating platform. In the presence of the polishing fluid, a substrate is pushed against the polishing pad. The distributed polishing fluid is distributed radially outward from the distribution location by the centrifugal force applied to the polishing fluid from the rotation of the platform. When the polishing fluid reaches the circumferential edge of the polishing pad, the polishing fluid generally flows into a drainage pool that surrounds the platform and extends to an area disposed below the platform. This facilitates capturing all fluid and other processing byproducts, as well as polishing byproducts associated therewith, during the CMP process and other accompanying processing activities (e.g., pad rinsing and pad conditioning activities).

[0016] A cost-effective solution is provided herein that allows waste discharge switching based on the waste characteristics of the used polishing fluid, even if the waste liquid includes one or more of copper, ozone, suspended solids, fluorides, toxic substances (e.g., GaAs), and others. Discharge switching enables protection of discharge pipe materials, economical and effective control of sub-factory components, and abatement (water flow, neutralization) of waste polishing fluid. Data management of the switching system enables estimation of waste composition and balance of materials used by the treatment system and waste collection system. Waste discharges are isolated based on the characteristics of the waste liquid. For example, waste discharges can be isolated to allow compliance treatment into corrosive and acidic discharges containing arsenic (As) and not containing As, respectively. Discharges can be further isolated based on other metals or other contaminants that require special treatment / abatement. Therefore, the cost of processing waste polishing fluid waste is reduced, enabling compliance reporting of specific wastes and reducing overall system operating costs. It should be understood that any processing system with wet applications can benefit from the disclosure below. For example, resist cleaning, other cleaning, and wet etching, to name just a few examples, all require capture of waste liquids and their disposal, recycling, treatment, and reporting. Thus, the disclosed system can be extended beyond etching, CVD, PVD, EPI cleaning, CMP, and electroplating for data collection and health monitoring.

[0017] Figure 11 is a schematic side view of a processing system configured with a plurality of drain pipes for selectively removing spent fluids. The processing system is part of a manufacturing facility. The manufacturing facility has a plurality of processing systems that can perform operations for manufacturing a variety of parts from a variety of materials. Although the processing system can be any of the various processing systems described above, for the sake of brevity, the present discussion will be limited to CMP system 100.

[0018] The CMP 100 includes a cylindrical platform 102, a polishing pad 104 secured to the platform, a substrate carrier 106, and a catch tank 122. The polishing pad 104 may be secured to the platform 102 using a pressure sensitive adhesive or other releasable technology. The substrate carrier 106 is disposed above the platform 102 such that a substrate disposed in the carrier 106 faces the polishing pad 104. The catch tank 122 is used to collect and recirculate polishing fluid from a polishing process performed on the CMP 100. During chemical mechanical processing, the substrate carrier 106 pushes the material surface of a substrate 108 disposed in the substrate carrier 106 against the polishing pad 104 while rotating about a carrier axis 110. As the rotating substrate carrier 106 sweeps back and forth from the inner diameter to the outer diameter of the platform 102, the platform 102 rotates about the platform axis 112 to partially reduce uneven wear of the polishing pad 104. In some embodiments, the polishing system 100 further includes a pad conditioner assembly (not shown) for abrading, regenerating, and removing polishing byproducts or other debris from the surface of the polishing pad 104 .

[0019] Polishing fluid, polishing fluid additives, cleaning fluid and / or deionized (DI) water are delivered from a polishing fluid source 126 to a fluid dispensing arm 114 located above the platform 102 and dispensed onto the polishing pad 104 using a nozzle 116 located in or on the fluid dispensing arm 114. The fluid dispensing arm 114 is coupled to an actuator 118 that positions the fluid dispensing arm 114 above the platform 102 by swinging the fluid dispensing arm 114 above the platform 102 when in use. The actuator 118 is disposed on a base plate 120 surrounding the platform 102. As discussed further below, the system controller 300 controls the actuator 118 and the amount of polishing fluid dispensed by the fluid dispensing arm 114 onto the polishing pad 104.

[0020] The fluid dispensing arm 114 can dispense an acidic polishing fluid, a corrosive polishing fluid, a fluid containing metals, deionized water, or one or more other fluids for polishing the substrate 108. In addition, when polishing the substrate 108 disposed on the platform 102, material from the surface of the substrate 108 that contacts the pad 104 may be suspended and / or entrained by the polishing and / or cleaning fluid. The materials removed from the substrate 108 may include metals or other materials that are entrained in the waste fluid and require environmental considerations for reporting and / or disposal. For example, the waste fluid may require abatement, disposal as a hazardous material, or recovery and reuse. The waste collection system 200 discussed below is uniquely configured to transport a variety of different materials present in the waste polishing fluid. The waste polishing fluid is also referred to herein as spent polishing fluid.

[0021] The catch tank 122 collects the spent polishing fluid that is rotated radially outward from the rotating polishing pad 104 due to centrifugal force. The catch tank 122 surrounds the platform 102, which causes almost all of the spent polishing fluid that flows radially outward from the surface of the polishing pad 104 to be directed into the catch tank 122. The spent polishing fluid is removed from the catch tank 122 via a system drain 124. The system drain 124 can remove spent polishing fluid from the catch tank 122 using gravity or a suction pump. The system drain 124 is connected to a waste collection system, which is described below with reference to Figure 2 Further details are given.

[0022] Figure 2 is a schematic diagram of a waste collection system 200 connected to a system exhaust pipe 124 of a CMP system 280 according to an embodiment. The CMP system 280 may have one or more CMPs 100. For example, the CMP system 280 may include a first CMP station 210, a second CMP station 220, and a third CMP station 230. Each CMP station 210, 220, 230 may be configured as a single CMP 100 as described above, or as another suitable system.

[0023] The waste collection system 200 may alternatively be used to manage waste streams from other types of systems. The waste collection system 200 is gravity fed from the system drain 124. Alternatively, the waste collection system 200 may include one or more vacuum devices configured to expel waste fluid from the system drain 124 and into the waste collection system 200.

[0024] The waste collection system 200 can be coupled to one or more CMP systems 280 or other similar systems. For example, the waste collection system 200 can be coupled to the first CMP station 210, the second CMP station 220, and the third CMP station 230. The waste collection system 200 can additionally include a post-CMP substrate cleaner 290. Although not shown, the cleaner 290 includes a rinse tank and / or a scrubber for removing residual polishing fluid and / or material from the substrate 108 after one or more of the CMP stations 210, 220, 230 perform a CMP process on the substrate 108. Each station 210, 220, 230 has a corresponding system exhaust pipe 124. At Figure 2 , the system exhaust pipe 124 of the first CMP station 210 is coupled to the exhaust line 212, the system exhaust pipe 124 of the second CMP station 220 is coupled to the exhaust line 222, and the system exhaust pipe 124 of the third CMP station 230 is coupled to the exhaust line 232. In addition, the system exhaust pipe 124 of the rinse tank and / or scrubber of the cleaner 290 is coupled to the exhaust pipe 292.

[0025] The waste collection system 200 has more than one valve box 290. The exhaust lines 212, 222, 232, 292 of each CMP station 210, 220, 230 and the rinser 290 may have a corresponding valve box 290. Alternatively, two or more exhaust lines 212, 222, 232, 292 may be coupled to the same valve box 290. The valve box 290 includes a plurality of valves for separating the waste liquid entering from the exhaust lines 212, 222, 232, 292 to a selected one of the plurality of exhaust pipes 250. The plurality of exhaust pipes 250 include fluid exhaust pipes 215, 225, 235, 245. For example, the first valve 201 may direct the waste liquid entering the valve box 290 from one of the exhaust lines 212, 222, 232, 292 to the first fluid exhaust pipe 215. The second valve 202 can direct the waste liquid from one of the exhaust lines 212, 222, 232, 292 entering the valve box 290 to the second fluid exhaust pipe 225. The third valve 203 can direct the waste liquid from one of the exhaust lines 212, 222, 232, 292 to the valve box 290 to the third fluid exhaust pipe 235. In addition, the fourth valve 204 can direct the waste liquid from one of the exhaust lines 212, 222, 232, 292 to the valve box 290 to the fourth fluid exhaust pipe 245. Therefore, all CMP stations 210, 220, 230 and the cleaner 290 can be selectively connected to all four different fluid exhaust pipes 215, 225, 235, 245 through the valve box 290.

[0026] Each fluid discharge pipe 215, 225, 235, 245 is configured to transport a specific waste stream. For example, fluid discharge pipe 1 (FD1) 215 can be designated to transport acidic waste without metals such as arsenic (As). Fluid discharge pipe 2 (FD2) 225 can be designated to transport corrosive waste without metals such as arsenic (As). Fluid discharge pipe 3 (FD3) 235 can be designated to transport acidic waste with metals such as arsenic (As). Fluid discharge pipe 4 (FD4) 245 can be designated to transport corrosive waste with metals such as arsenic (As). In this way, the waste stream flowing to each fluid discharge pipe 215, 225, 235, 245 can be characterized, reduced and / or disposed of according to the needs of the specific waste. In addition, each fluid discharge pipe 215, 225, 235, 245 can be metered for reporting or other purposes. Thus, in operation, similar waste fluids from all stations 210 , 220 , 230 and the washer 290 may be collected in a common and appropriate one of the plurality of drain pipes 250 .

[0027] refer to Figure 3 , Figure 3 is a schematic diagram of a system controller 300 configured to control the waste collection system 200. The system controller 300 may control or communicate with a portion of a manufacturing facility. The system controller 300 communicates with the polishing system 100 and the waste collection system 200. The system controller 300 includes a programmable central processing unit, such as a CPU 302, which is operable with a memory 304 (e.g., non-volatile memory) and support circuits 306. The support circuits 306 are coupled to the CPU 302 in a conventional manner and include caches, clock circuits, input / output subsystems, power supplies, etc. The combination thereof is coupled to various components of the polishing system 100. The CPU 302 is one of any form of general purpose computer processor used in an industrial environment, such as a programmable logic controller (PLC), for communicating with various components and sub-processors of the polishing system 100. The memory 304 coupled to the CPU 302 is non-transitory and is typically one or more readily available memories such as random access memory (RAM), read only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage.

[0028] The memory 304 is in the form of a computer-readable storage medium (e.g., non-volatile memory) containing instructions that, when executed by the CPU 302, facilitate the operation of the polishing system 100. The instructions in the memory 304 are in the form of a program product, such as a program that implements the method of the present disclosure. The CPU 302 is also configured to include sensors and machine learning capabilities. The sensors of the CPU 302 can be configured to characterize the polishing fluid waste, such as pH level, oxygen level, and nitric acid level, among others. The machine learning capability can optimize the switching of the drain pipe 250 based on the waste characteristics and the treatment recipe.

[0029] The memory 304 is configured to store a plurality of instructions for running operations on the polishing system 100 and the waste collection system 200. For example, the memory 304 may store instructions for providing a first polishing recipe for removing a layer of material on a substrate. The memory 304 may store instructions indicating the substrate material and the fluids used during processing. The memory 304 may store information for the flow of the first and second polishing fluids for when to switch from the first polishing fluid to the second polishing fluid or from the second polishing fluid to the first polishing fluid. The memory may store instructions for characterizing fluid waste and controlling the waste collection system 200. In addition, the memory 304 may store instructions for how to manage waste collection in the event of a power or instrument connection failure.

[0030] The program code may conform to any of many different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program of the program product defines the functions of the embodiments (including the methods described herein).

[0031] Illustrative computer-readable storage media include, but are not limited to: (i) non-writable storage media on which information is permanently stored (e.g., a read-only memory device within a computer, such as a CD-ROM disk that can be read by a CD-ROM drive, flash memory, ROM chip, or any type of solid-state non-volatile semiconductor memory); and (ii) writable storage media on which information is stored that can be changed (e.g., a floppy disk within a floppy disk drive or hard drive, or any type of solid-state random access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure. In some embodiments, the methods described herein, or portions thereof, are performed by one or more application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other types of hardware implementations. In some other embodiments, the polishing pad manufacturing methods described herein are performed by a combination of software routines, ASICs, FPGAs, and / or other types of hardware implementations.

[0032] The controller 300 may perform the selection of the appropriate one of the plurality of drains 250 for a particular waste fluid. The controller 300 may monitor the stations 210, 220, 230 and the cleaner 290 for the particular fluid being used and the material being polished / cleaned. For example, the controller 300 may monitor the polishing recipe being run by the CMP 100 to properly connect the appropriate fluid drains 215, 225, 235, 245 to each station 210, 220, 230 and the cleaner 290. It should be understood that each station 210, 220, 230 and the cleaner 290 is connected to one of the fluid drains 215, 225, 235, 245 corresponding to the waste fluid, and therefore, more than one station 210, 220, 230 and the cleaner 290 may be coupled to the same drain 250. In operation, the controller 300 issues instructions for polishing a substrate on the CMP 100 and collecting fluid waste with the waste collection system 200.

[0033] refer to Figure 4 , Figure 44 is a flow chart illustrating a method for collecting waste fluid from CMP 100 in waste collection system 200. A substrate is introduced into CMP 100 for polishing. The substrate is placed on a polishing pad of the CMP system. The substrate may have an associated recipe stored in a controller. The recipe provides instructions for removing all or part of a material layer of the substrate by the CMP system. The recipe may be unique to a substrate, a group of substrates, or an operation. In operation 410, the controller monitors a processing fluid dispensed into a processing system of a manufacturing facility according to a processing recipe for treating a material on a part. For example, a first polishing fluid is dispensed onto a surface of a polishing pad. The controller directs a first polishing fluid of one or more polishing or cleaning fluids to be introduced into the processing system via a fluid dispensing arm for polishing and / or cleaning the substrate. The polishing fluid may be acidic or corrosive. The polishing fluid may additionally contain a metalloid, such as arsenic, or other material for removing material from a substrate during polishing.

[0034] At operation 420, the controller monitors the treatment fluid removed as waste from the treatment system. For example, during polishing, the substrate is pressed against the surface of the polishing pad while rotating the platform, on which the polishing pad is disposed. The first polishing fluid helps remove material from the surface of the substrate. The spent polishing fluid may contain particles removed from the substrate during polishing. The spent or spent polishing fluid carries impurities removed from the substrate, such as metals, such as cobalt, molybdenum, titanium, etc., or silicon-containing materials and other impurities. The spent polishing fluid with impurities is removed from the CMP via a drain pipe.

[0035] At operation 430, the controller directs the collection of waste fluid using a waste collection system. The waste collection system includes a valve box coupled to two or more facility drains. The controller is configured to operate each valve in the valve box between an open and a closed state. Used polishing fluid is removed from the polishing system via a drain of a treatment system coupled to the valve box. The valve box has a first valve of a plurality of valves, wherein each valve is uniquely coupled to a separate facility drain.

[0036] At operation 440, characteristics of fluid waste removed from the substrate processing system, collected via a waste collection system coupled to a plurality of facility drains, are determined. The controller may determine the characteristics of the waste fluid based on the polishing fluid and the material removed from the substrate. The characteristics may be determined by extracting information from the polishing recipe of the substrate. Alternatively, the spent polishing fluid may be analyzed with a sensor for detecting pH and / or other chemical properties of the spent polishing fluid.

[0037] For example, the controller may monitor the slurry type. The slurries may have assigned numeric codes, such as 1 for acidic metals, 2 for alkaline metals, 3 for acidic non-metals, and 4 for alkaline non-metals. For chemicals that are not otherwise classified, such as deionized water, the slurry may be additionally assigned a 0. The flow rate of each slurry material is monitored, as well as the status of the cleaner / CMP. For example, the CMP may be processing, paused, stopped, in a fault state, or idle.

[0038] Additionally, the slurry waste may contain particles removed from the substrate. For example, copper, ozone, solids, fluorides, toxic materials (GaAs), etc. The CMP / cleaner is provided with a polishing operation that removes a layer of material in the recipe. The controller can then determine the characteristics of the slurry waste that will enter the CMP drain by knowing the slurry used and the material removed from the substrate.

[0039] At operation 450, in response to determining the characteristics of the fluid waste, the waste liquid is directed by the controller to a first valve in the valve box coupled to a first facility drain pipe. The controller can operate one or more values ​​in the valve box to open the first valve while closing the remaining valves. Based on the characteristics of the waste liquid, the spent waste liquid is directed to a first facility drain pipe among a plurality of facility drain pipes via the first valve. For example, waste liquid characterized as corrosive metals will be directed to a facility drain pipe suitable for collecting corrosive metal waste. Similarly, waste liquid characterized as acidic metals will be directed to a facility drain pipe suitable for collecting acidic metal waste.

[0040] Each of these facility drains is configured to accept a specific waste type. The first facility drain is configured to accept all waste streams of a specific characteristic, such as corrosive wastes with metals. In this way, only similar wastes are collected in the same facility drain. For example, the controller can operate valves to specific drains based on chemical, pH, and particles, as shown in Table 1:

[0041]

[0042] When switching the valve to a different facility drain, a reaction and delay time can be provided to prevent waste streams with different characteristics or that are less hazardous from entering the wrong drain. For example, the controller can operate the valve to direct acidic waste streams with semi-metals (e.g., arsenic) to the appropriate drain earlier than the waste stream is expected to reach the valve box, and similarly maintain the valve configured to direct the fluid to the facility drain for a short period of time after the fluid stops being dispensed onto the CMP to ensure that all waste is collected.

[0043] The controller may include a default action that specifies a default facility drain. For example, facility drain FD4 configured as an acidic metal-containing drain may be used during a communication interruption with the tool. In this way, the unknown characteristics of the waste stream are treated with the utmost care and prevented from being inadvertently sent for recycling or reused in a harmful or otherwise hazardous manner.

[0044] The controller may further prepare reports on the amount of waste entering the first facility drain; the second facility drain; the third facility; and the fourth facility drain. These reports may be used for environmental compliance, waste reduction analysis, or other purposes.

[0045] Waste characterization becomes very complex for manufacturing facilities. Advantageously, the above-described apparatus and method provide a cost-effective solution for waste management by allowing waste discharge switching based on several characteristics of the waste, and even providing a fail-safe solution. This enables cost-effective control of discharge pipe material protection and sub-plant components, reduction (water flow, neutralization), and data management, waste composition estimation and material balance, all of which enable the cost of waste treatment to be reduced. In addition, proper characterization of the waste provides knowledge for personnel to safely transport the waste. Material balance can be determined by tools and chemical facilities. Estimation of wastewater composition, including comparison with sensors to detect drift and other changes. This further enables detection of abnormal consumption, such as abnormal consumption caused by faulty valves or leaks.

[0046] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope of the same is determined by the claims which follow.

Claims

1. A system controller configured to control the operation of at least a portion of a manufacturing facility, the system controller include: a CPU configured to control the operation of at least a portion of the manufacturing facility, the CPU being in communication with: A first processing system, the first processing system comprising: a catch basin sized to capture a process fluid dispensed within the process system for treating material on a part; and a first system drain disposed within the capture tank, wherein the first system drain is configured to collect the process fluid as waste after processing the part; and The CPU is configured to control a waste collection system fluidly coupled to the first system drain, wherein the waste collection system comprises: a valve box having two or more valves, the valve box configured to be coupled to the first system drain and two or more facility drains, wherein each facility drain is uniquely coupled to one of the two or more valves; and Wherein the CPU is configured to operate the two or more valves between open and closed states in response to characteristics of the waste fluid entering the first system drain.

2. The system controller of claim 1, wherein the waste collection system has four facility drains coupled to respective valves, each respective valve being operable between an open and a closed state by the controller.

3. The system controller of claim 2, wherein the waste collection system further include: a first facility discharge pipe configured to receive waste stream from the first system discharge pipe, the waste stream characterized by the controller as acidic and metalliferous; a second facility discharge pipe configured to receive a fluid from the discharge pipe, the fluid characterized by the controller as corrosive metal-containing; a third facility drain configured to receive a fluid from the drain, the fluid characterized by the controller as a metal-free acid; as well as A fourth facility drain is configured to receive a fluid from the drain, the fluid characterized by the controller as corrosive and metal-free.

4. The system controller of claim 3, wherein the CPU is configured to: operating a first valve coupling the first drain to the first facility drain between open and closed states; a second valve operating between open and closed states to couple the first discharge conduit to the second facility discharge conduit; operating a third valve coupling the first discharge conduit to the third facility discharge conduit between open and closed states; as well as A fourth valve is operated between open and closed states to couple the first discharge conduit to the fourth facility discharge conduit.

5. The system controller of claim 3, the CPU further in communication with a second treatment system configured similarly to the first treatment system and having a second system drain fluidly coupled to the waste collection system.

6. The system controller of claim 3, wherein the CPU is configured to characterize the waste liquid entering the first system drain, and if the waste liquid is an acid containing metals, the CPU operates to direct the waste liquid only into the first facility drain.

7. The system controller of claim 3, wherein the CPU is configured to characterize the fluid entering the first system drain, and if the fluid cannot be characterized, the CPU operates to direct the waste fluid only into the first facility drain.

8. A method of collecting waste liquid from a portion of a manufacturing facility, the method include: determining characteristics of the waste fluid removed from a substrate processing system, the waste fluid collected via a waste collection system coupled to a plurality of facility drains; as well as In response to determining the characteristic of the fluid waste, the controller is caused to direct the waste fluid to a first drain of the plurality of facility drains that is suitable for conveying the waste fluid.

9. The method of claim 8, wherein the waste collection system further comprises: include: a first facility discharge pipe of the plurality of facility discharge pipes, the first facility discharge pipe being configured to receive a waste stream characterized as acidic metalliferous; a second facility discharge pipe of the plurality of facility discharge pipes, the second facility discharge pipe being configured to receive a waste stream characterized as corrosive metal-bearing; a third facility drain of the plurality of facility drains, the third facility drain being configured to drain a waste stream characterized as a metal-free acid; and A fourth facility drain of the plurality of facility drains is configured to receive a waste stream characterized as corrosive and metal-free.

10. The method of claim 9, wherein the controller determines the characteristics of the waste fluid using the fluid used in a recipe run on the substrate processing system and material from a substrate carried away from the waste fluid after processing.

11. The method of claim 10, wherein the waste stream that cannot be characterized is placed in the first facility drain.

12. The method according to claim 10, further comprising: include: The waste stream is directed to the first drain under a fail-safe condition, wherein the controller operates to open a valve in a configuration to direct the waste stream to the first facility drain.

13. The method of claim 9, further comprising: include: Reporting entry into the first facility discharge pipe; the second facility drain; the third facility drain; and the fourth facility drain.

14. The method of claim 9, further comprising: include: Delay the switch to one or more facility drains to prevent waste streams of different characteristics or less hazardous from entering the wrong drain.

15. A non-transitory computer-readable storage medium comprising a program product, the program product being configured when executed to cause a method of collecting waste liquid from a manufacturing facility to be performed, the method include: determining characteristics of the waste fluid removed from a substrate processing system, the waste fluid collected via a waste collection system coupled to a plurality of facility drains; as well as In response to determining the characteristic of the fluid waste, the waste fluid is directed to a first drain of the plurality of facility drains adapted to transport the waste fluid.

16. The non-transitory computer readable storage medium of claim 15, wherein the waste collection system further comprises: include: a first facility discharge pipe of the plurality of facility discharge pipes, the first facility discharge pipe being configured to receive a waste stream characterized as acidic metalliferous; a second facility discharge pipe of the plurality of facility discharge pipes, the second facility discharge pipe being configured to receive a waste stream characterized as corrosive metal-bearing; a third facility drain of the plurality of facility drains, the third facility drain being configured to drain a waste stream characterized as a metal-free acid; and A fourth facility drain of the plurality of facility drains is configured to receive a waste stream characterized as corrosive and metal-free.

17. The non-transitory computer readable storage medium of claim 16, wherein the fluid used in a recipe run on a substrate processing system and the material from the substrate carried away from the waste fluid after processing determine the characteristics of the waste fluid.

18. The non-transitory computer readable storage medium of claim 17, wherein the waste fluid that cannot be characterized is placed in the first facility drain.

19. The non-transitory computer readable storage medium of claim 17, further comprising: include: The waste stream is directed to the first drain under a fail-safe condition, wherein the controller operates to open a valve in a configuration to direct the waste stream to the first facility drain.

20. The non-transitory computer readable storage medium of claim 16, further comprising: include: Reporting entry into the first facility discharge pipe; the second facility discharge pipe; the third facility discharge pipe; and the amount of fluid waste discharged from the fourth facility discharge pipe.

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