Cutting equipment for high-precision monocrystalline silicon wafer processing and cutting method thereof

Abstract

The invention relates to the technical field of monocrystalline silicon wafer processing, and provides high-precision cutting equipment for monocrystalline silicon wafer processing and a cutting method of the high-precision cutting equipment. A mounting base is fixed to the top end of the workbench, a position moving assembly is fixed to the top end of the mounting base, a clamping structure is arranged at the top end of the position moving assembly, a driving motor is installed on one side of the clamping structure, a height moving assembly is installed on one side of the top end of the workbench, and a cutting assembly is installed on one side of the height moving assembly. A tensioning assembly is arranged at the rear end of the cutting assembly, the clamping structure comprises a mounting frame, and the mounting frame is mounted on one side of the top end of the position moving assembly. According to the silicon single crystal rod slicing device, by arranging the clamping structure, when a silicon single crystal rod is sliced, the silicon single crystal rod can be preliminarily clamped through the use of the first clamping plates, and two sets of second clamping plates can be driven to move towards the middle position through the cooperative use of a bidirectional screw rod and a screw sleeve, so that the silicon single crystal rod is secondarily clamped.

Description

Technical Field

[0001] The present invention relates to the technical field of single crystal silicon wafer processing, and particularly relates to a cutting device and a cutting method for high-precision single crystal silicon wafer processing. Background Art

[0002] In recent years, with the rapid development of photovoltaic technology and micro-miniature semiconductor inverter technology, the demand for single crystal silicon wafers has been increasing continuously. Especially in the field of solar cells, single crystal silicon solar cells are favored due to their high photoelectric conversion efficiency and stable performance. At the same time, with the continuous development of the semiconductor industry, the application of single crystal silicon wafers in integrated circuit manufacturing is also becoming more and more extensive; a cutting device for single crystal silicon wafer processing is required for cutting single crystal silicon wafers;

[0003] However, there are still some problems in the traditional cutting device for single crystal silicon wafer processing during processing. When processing a single crystal silicon wafer, it is usually sliced from a single crystal silicon rod. When cutting the single crystal silicon rod, it is also necessary to clamp it to ensure that the single crystal silicon rod does not shake during the cutting process and prevent the cutting accuracy from being affected due to shaking. However, although the traditional clamping block clamping structure can clamp the single crystal silicon rod, it is very easy for the clamping to become loose due to the vibration generated during cutting during long-term operation, affecting the cutting accuracy. Therefore, a cutting device and a cutting method for high-precision single crystal silicon wafer processing are needed to solve the above problems. Summary of the Invention

[0004] The purpose of the present invention is to provide a cutting device and a cutting method for high-precision single crystal silicon wafer processing, so as to solve the defect that although the traditional clamping structure can clamp a single crystal silicon rod when slicing the single crystal silicon rod with the existing cutting device for single crystal silicon wafer processing, the clamping is very easy to become loose due to the vibration generated during cutting during long-term operation, affecting the cutting accuracy.

[0005] To solve the above technical problems, the present invention provides the following technical solution: A cutting device for high-precision single crystal silicon wafer processing, comprising a workbench and a mounting base;

[0006] A mounting base is fixed at the top of the workbench, a position moving assembly is fixed at the top of the mounting base, a clamping structure is arranged at the top of the position moving assembly, a driving motor is installed on one side of the clamping structure, and a height moving assembly is installed on one side of the top of the workbench;

[0007] A cutting component is installed on one side of the height moving component, and a tensioning component is arranged at the rear end of the cutting component. The clamping structure includes a mounting frame. A mounting frame is installed on one side of the top end of the position moving component. The bottom end of the mounting frame is fixed to the surface of the lead screw sleeve inside the position moving component. A bidirectional screw is installed inside the mounting frame. A screw sleeve is installed outside the bidirectional screw. The top end of the screw sleeve is fixed with a second clamping plate. A mounting box is fixed on one side of the mounting frame. A worm gear is installed inside the mounting box. One end of the worm gear is fixed to one end of the bidirectional screw. A worm is installed on one side of the worm gear. A handle is installed at the top end of the worm.

[0008] Preferably, a fixing block is installed on one side of the mounting frame. A slider is installed inside the fixing block. A first clamping plate is installed at the top end of the slider. A nut is installed on one side of the top end of the slider.

[0009] Preferably, a suction hole is opened on one side of the inner cavity of the first clamping plate. A movable sleeve is fixed on one side of the first clamping plate. A piston is installed inside the movable sleeve. One end of the movable sleeve on one side of the first clamping plate is installed with a fixing frame. One end of the fixing block is hinged with a connecting plate. One end of the connecting plate is hinged with one side of the piston. A fixing piece is fixed on one side of the second clamping plate.

[0010] Preferably, a telescopic spring is fixed on one side of the other end of the connecting plate. One end of the telescopic spring is fixed to one side of the first clamping plate. The telescopic spring and one side of the first clamping plate form a telescopic structure. A rubber pad is installed on the other side of the first clamping plate, and a water injection port is installed on one side.

[0011] Preferably, an external thread is arranged on the outside of the bidirectional screw, and an internal thread is arranged on the inside of the screw sleeve. A threaded connection is formed between the screw sleeve and the bidirectional screw.

[0012] Preferably, there are two groups of the second clamping plates. The two groups of second clamping plates are symmetrically distributed at the top end of the mounting frame. A connecting rod is installed on one side of the mounting seat. A connecting disc is installed at one end of the connecting rod. A cleaning sleeve is arranged on one side of the connecting rod. A cleaning cotton is installed at one end of the cleaning sleeve. A single crystal silicon rod is inserted into the cleaning sleeve.

[0013] Preferably, a filtering structure is arranged at the top end of the workbench at the bottom end of the cutting component. The filtering structure includes a filtering box. The filtering box is installed on one side of the top end of the workbench. Support frames are fixed on both sides of the top end of the filtering box. A filtering frame is installed at the middle position of the support frames. A ceramic membrane is installed inside the filtering frame. A servo motor is installed on one side of the support frame. The output end of the servo motor is connected to one side of the filtering frame.

[0014] Preferably, an extrusion disc is installed on the outer side of the output end of the servo motor. A moving block is installed inside one side of the support frame. A guiding block is installed on one side of the moving block. A connecting block is fixed to the top end of the moving block. An impact plate is installed on one side of the bottom end of the connecting block. Two reset springs are installed at both ends of one side of the bottom end of the connecting block. The bottom ends of the reset springs are fixed to the top end of the support frame. A collection plate is inserted into the interior of the filter box, and a filter plate is inserted into the bottom end of the interior of the filter box.

[0015] Preferably, there are two sets of the extrusion discs, and the two sets of extrusion discs are symmetrically distributed on the outer side of the output end of the connecting block.

[0016] Preferably, a cutting method for processing high-precision single-crystal silicon wafers includes the following steps.

[0017] S1. When cutting a single-crystal silicon wafer, first pass one end of the single-crystal silicon rod through the inside of the cleaning sleeve, and then place one end of it on the top of the mounting rack. After placing it, move the first clamping plate so that one side of the first clamping plate fits against the outer side of one end of the single-crystal silicon rod. When the first clamping plate moves, it will drive the slider to slide inside the fixed block. When the first clamping plate is in place, fix the nut on the bolt at the top end of the slider to fix the first clamping plate, thus completing the preliminary clamping of the single-crystal silicon rod.

[0018] S2. After the preliminary clamping of the single-crystal silicon rod is completed, rotate the handle. When the handle rotates, it drives the worm to rotate. When the worm rotates, it drives the bidirectional screw to rotate through the cooperation with the worm gear. When the bidirectional screw rotates, it can drive two sets of second clamping plates to move towards the middle position through the cooperation with the screw sleeves, so that one side of the second clamping plate fits against one end of the single-crystal silicon rod, completing the secondary clamping of the single-crystal silicon rod.

[0019] S3. When the second clamping plate moves to one side, it will push one end of the connecting plate to move to one side and squeeze the telescopic spring to contract. Since the middle of the connecting plate is hinged to the fixed frame, the other end of the connecting plate will move to one side. When the other end of the connecting plate moves to the other side, it will drive the piston to move inside the movable sleeve, thereby sucking the air in the inner cavity of the first clamping plate. At this time, through the use of the suction holes, a temporary sealed space can be formed between the first clamping plate and the outer side of the single-crystal silicon rod. Since the air pressure in the sealed space decreases, a pressure difference is generated with the external atmospheric pressure, and the external atmospheric pressure will firmly squeeze the single-crystal silicon rod and the first clamping plate together. After the first clamping plate completes the preliminary clamping, the rubber pad on one side of the first clamping plate will fit the surface of the single-crystal silicon rod. At this time, the staff injects water into the inside of the rubber pad through the water injection port. During vacuum adsorption, the rubber pad will be squeezed, and the water inside the rubber pad will flow out through the small holes on one side. There may be invisible unevenness or dust particles on the contact surface between the first clamping plate and the single-crystal silicon rod, resulting in air infiltration inside. The water can fill these gaps, reduce the gap between the first clamping plate and the single-crystal silicon rod, enhance the sealing performance, prevent external air from entering the inside of the first clamping plate and destroying the vacuum state, and enhance the adsorption effect, thereby realizing the multiple clamping work on the single-crystal silicon rod, making the single-crystal silicon rod not prone to random movement during the processing process, and thus improving the processing accuracy of the single-crystal silicon rod;

[0020] S4. After the single-crystal silicon rod is clamped, the external power supply starts the driving motor. After the driving motor starts, it will drive the rotation of the lead screw inside the position moving component. When the lead screw rotates, it will drive the single-crystal silicon rod at the top of the mounting frame to move to one side through the cooperation with the lead screw sleeve. The moving distance of the single-crystal silicon rod is controlled through the control panel on one side of the mounting seat. When the driving motor rotates, it will drive the connection disk to rotate through the belt. When the connection disk rotates, it will drive the connecting rod to rotate. When the connecting rod rotates, it will drive the cleaning sleeve to rotate through the belt. A limit seat is provided at the bottom end of the cleaning sleeve to make the cleaning sleeve more stable during rotation. When the cleaning sleeve rotates, it can clean impurities such as dust, oxides, and metal ions on the surface of the single-crystal silicon rod through the semiconductor blue brush inside it. The setting of the semiconductor blue brush ensures that it will not cause secondary pollution to the surface of the silicon rod due to electrostatic adsorption during cleaning. As the single-crystal silicon rod moves, the cleaning cotton can perform secondary cleaning on the cleaned single-crystal silicon rod, making the surface of the single-crystal silicon rod cleaner during cutting. Cleaning impurities such as dust, oxides, and metal ions on the surface of the silicon rod can avoid problems such as cutting surface burrs and microcracks caused by foreign object interference during the cutting process, thereby ensuring the smoothness and flatness of the silicon wafer surface and achieving the effect of high-precision processing;

[0021] S5. When the single crystal silicon rod moves to the bottom of the cutting assembly, the cutting assembly is started. After starting, the cutting assembly will drive the diamond wire to rotate at high speed through the motor. When the diamond wire rotates, the height moving assembly is started to drive the cutting assembly to move downward to slice the single crystal silicon rod. When slicing, an external cooling pipe can be connected to spray coolant to cool the cut part of the single crystal silicon rod. When the single crystal silicon rod produces cooling waste liquid during slicing, it will fall into the inside of the filter frame. At this time, the use of ceramic membrane can filter the cooling waste liquid. The cooling waste liquid contains diamond grinding chips generated by the wear of the diamond wire and the single crystal silicon rod. Silicon chips generated by slicing, when treating the cooling waste liquid of silicon wafer cutting, the particle size of diamond chips is usually >0.5μm and the particle size of silicon chips is <0.3μm, so the ceramic membrane has a pore size of 0.4μm, so that the diamond chips can be filtered, so that the diamond chips remain on the surface of the ceramic membrane, and the silicon chips continue to fall into the inside of the filter box and then filtered by the filter plate. The filter plate is a ceramic membrane with a pore size of 0.2μm, so the silicon chips can be filtered down, realizing the separation and filtration of diamond chips and silicon chips, and the filtered cooling waste liquid is discharged and collected through the drainage hole of the filter box for secondary utilization;

[0022] S6. When it is necessary to collect diamond grinding chips, insert the collection plate into the filter box. After the insertion is completed, start the servo motor. After starting, the servo motor will drive the filter frame to slowly flip 180°. When the filter frame rotates, the servo motor will also drive the extrusion plate to rotate 180°. When the extrusion plate rotates, it will squeeze the moving block to move upward. There is an arc on one side of the extrusion moving block, and there is also an arc on one side of the extrusion plate. Therefore, when squeezed, the moving block will move upward. When the moving block moves upward, it pushes the connecting block to move upward under the limit of the guide block. When the connecting block moves, it will drive the impact plate to move upward. When the filter frame rotates 180°, the moving block will be inserted into the middle position of the two sets of extrusion disks under the pull of the reset spring. When the reset spring is pulled back, it will pull the impact plate back to its original position and hit the two sides of the filter frame, causing the filter frame to vibrate violently, thereby vibrating the diamond chips filtered by the ceramic membrane to the surface of the collecting plate, completing the collection of the diamond chips. At this time, the collecting plate and the filter plate are pulled out to complete the separation, filtration and collection of the diamond chips and silicon chips, and finally complete the slicing of the single crystal silicon wafers.

[0023] The present invention provides a high-precision single crystal silicon wafer processing cutting device and a cutting method thereof, which have the advantages that: the single crystal silicon rod can be clamped multiple times by setting a clamping structure, so that the single crystal silicon rod will not easily move during cutting, and the diamond grinding chips and silicon chips in the cooling wastewater can be separated and filtered out by setting a filtering structure, so that the separation and filtering effect is better;

[0024] By providing a clamping structure, when slicing a single-crystal silicon rod, the first clamping plate can be used to initially clamp the single-crystal silicon rod. And through the combined use of the bidirectional screw and the screw sleeve, the two groups of second clamping plates can be driven to move towards the middle position, thereby clamping the single-crystal silicon rod for the second time;

[0025] Furthermore, when the second clamping plate moves, it will push one end of the connecting plate to move to one side, causing the other end to move to the other side, thereby driving the piston to move inside the movable sleeve, sucking the air in the inner cavity of the first clamping plate away. At this time, through the use of the suction holes, the first clamping plate can form a temporary sealed space with the outer side of the single-crystal silicon rod. Since the air pressure in the sealed space decreases, a pressure difference is generated with the external atmospheric pressure, and the external atmospheric pressure will firmly squeeze the single-crystal silicon rod and the first clamping plate together, thereby realizing the final clamping of the single-crystal silicon rod and making it difficult for the single-crystal silicon rod to move randomly during clamping, which affects the slicing accuracy;

[0026] Furthermore, when the driving motor rotates, it will drive the cleaning sleeve to rotate through the connecting rod during rotation. When the cleaning sleeve rotates, the semiconductor blue brush inside it can clean impurities such as dust, oxides, and metal ions on the surface of the single-crystal silicon rod. The setting of the semiconductor blue brush ensures that it will not cause secondary pollution to the silicon rod surface due to electrostatic adsorption during cleaning. With the movement of the single-crystal silicon rod, the use of the cleaning cotton can perform secondary cleaning on the cleaned single-crystal silicon rod, making the surface of the single-crystal silicon rod cleaner during cutting. Cleaning impurities such as dust, oxides, and metal ions on the silicon rod surface can avoid problems such as cutting surface burrs and microcracks caused by foreign object interference during the cutting process, thereby ensuring the smoothness and flatness of the silicon wafer surface and achieving the effect of high-precision processing, thus improving the cutting accuracy;

[0027] By providing a filtering structure, when recycling cooling wastewater, the ceramic membrane can be used to filter the cooling waste liquid. Since the diamond abrasives (particle size usually > 0.5μm) and silicon chips (particle size < 0.3μm), the ceramic membrane has a pore size of 0.4μm, so as to filter the diamond abrasives, leaving the diamond abrasives on the surface of the ceramic membrane, and the silicon chips continue to fall into the internal part of the filter box and are then filtered by the filter plate. The filter plate has a pore size of 0.2μm, so the silicon chips can be filtered out, realizing the separation and filtration of diamond abrasives and silicon chips, and thus completing the filtering work. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is the front three-dimensional structural schematic diagram of the present invention;

[0029] Figure 2 is the top three-dimensional structural schematic diagram of the present invention;

[0030] Figure 3Schematic diagram of the upward three-dimensional structure of the present invention;

[0031] Figure 4 Schematic diagram of the front three-dimensional structure of the clamping structure of the present invention;

[0032] Figure 5 For the present invention Figure 4 Schematic diagram of the enlarged three-dimensional structure of the local part at A in

[0033] Figure 6 Schematic diagram of the front local three-dimensional structure of the clamping structure of the present invention;

[0034] Figure 7 Schematic diagram of the front local sectional three-dimensional structure of the clamping structure of the present invention;

[0035] Figure 8 For the present invention Figure 7 Schematic diagram of the enlarged three-dimensional structure of the local part at B in

[0036] Figure 9 Schematic diagram of the top three-dimensional structure of the clamping structure of the present invention;

[0037] Figure 10 Schematic diagram of the side sectional three-dimensional structure of the handle of the present invention;

[0038] Figure 11 Schematic diagram of the front three-dimensional structure of the filtering structure of the present invention;

[0039] Figure 12 Schematic diagram of the front sectional three-dimensional structure of the filtering structure of the present invention;

[0040] Figure 13 Schematic diagram of the side sectional three-dimensional structure of the filtering structure of the present invention;

[0041] Figure 14 Schematic diagram of the side three-dimensional structure of the extrusion disc of the present invention;

[0042] Figure 15 Schematic diagram of the side three-dimensional structure of the first clamping plate of the present invention.

[0043] Description of the reference numerals in the figures: 1, workbench; 2, mounting seat; 3, drive motor; 4, clamping structure; 401, mounting frame; 402, cleaning sleeve; 403, cleaning cotton; 404, connecting rod; 405, connecting disk; 406, bidirectional screw; 407, fixed block; 408, nut; 409, first clamping plate; 4010, slider; 4011, suction hole; 4012, second clamping plate; 4013, screw sleeve; 4014, fixing piece; 4015, telescopic spring; 4016, connecting plate; 4017, fixing frame; 4018, piston; 4019, movable sleeve; 4020, handle; 4021, worm gear; 4022, worm; 4023, mounting box; 5, position moving assembly; 6, filtering structure; 601, servo motor; 602, support frame; 603, connecting block; 604, return spring; 605, impact plate; 606, filtering frame; 607, ceramic membrane; 608, moving block; 609, extrusion disk; 6010, collecting plate; 6011, filter plate; 6012, guiding block; 6013, filtering box; 7, cutting assembly; 8, height moving assembly; 9, tensioning assembly; 10, rubber pad; 11, water injection port. Detailed implementation manners

[0044] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0045] Please refer to Figures 1 - 15 , a cutting device and a cutting method for high-precision single-crystal silicon wafer processing provided by the present invention, including a workbench 1 and a mounting seat 2; a mounting seat 2 is fixed on the top end of the workbench 1, a position moving assembly 5 is fixed on the top end of the mounting seat 2, a clamping structure 4 is arranged on the top end of the position moving assembly 5, a drive motor 3 is installed on one side of the clamping structure 4, and a height moving assembly 8 is installed on one side of the top end of the workbench 1; a cutting assembly 7 is installed on one side of the height moving assembly 8, and a tensioning assembly 9 is arranged at the rear end of the cutting assembly 7.

[0046] The clamping structure 4 includes a mounting bracket 401. One side of the top end of the position moving assembly 5 is provided with the mounting bracket 401. The bottom end of the mounting bracket 401 is fixed to the surface of the screw sleeve inside the position moving assembly 5. A bidirectional screw 406 is installed inside the mounting bracket 401. A screw sleeve 4013 is installed outside the bidirectional screw 406. The top end of the screw sleeve 4013 is fixed with a second clamping plate 4012. One side of the mounting bracket 401 is fixed with a mounting box 4023. A worm gear 4021 is installed inside the mounting box 4023. One end of the worm gear 4021 is fixed to one end of the bidirectional screw 406. A worm 4022 is installed on one side of the worm gear 4021. A handle 4020 is installed at the top end of the worm 4022. A fixing block 407 is installed on one side of the mounting bracket 401. A slider 4010 is installed inside the fixing block 407. A first clamping plate 409 is installed at the top end of the slider 4010. A nut 408 is installed on one side of the top end of the slider 4010. A suction hole 4011 is opened on one side of the inner cavity of the first clamping plate 409. A movable sleeve 4019 is fixed to one side of the first clamping plate 409. A piston 4018 is installed inside the movable sleeve 4019. One end of the movable sleeve 4019 on one side of the first clamping plate 409 is provided with a fixing bracket 4017. One end of the fixing block 407 is hinged with a connecting plate 4016. One end of the connecting plate 4016 is hinged to one side of the piston 4018. A fixing piece 4014 is fixed to one side of the second clamping plate 4012. One side of the other end of the connecting plate 4016 is fixed with a telescopic spring 4015. One end of the telescopic spring 4015 is fixed to one side of the first clamping plate 409. The telescopic spring 4015 and one side of the first clamping plate 409 form a telescopic structure. A rubber pad 10 is installed on the other side of the first clamping plate 409. A water injection port 11 is installed on one side of the rubber pad 10. External threads are provided on the outside of the bidirectional screw 406. Internal threads are provided on the inside of the screw sleeve 4013. A threaded connection is formed between the screw sleeve 4013 and the bidirectional screw 406. There are two groups of the second clamping plates 4012, and the two groups of the second clamping plates 4012 are symmetrically distributed at the top end of the mounting bracket 401. One side of the mounting seat 2 is provided with a connecting rod 404. One end of the connecting rod 404 is provided with a connecting disc 405. A cleaning sleeve 402 is provided on one side of the connecting rod 404. A cleaning cotton 403 is installed at one end of the cleaning sleeve 402. A single crystal silicon rod is inserted into the cleaning sleeve 402;

[0047] Refer to Figures 1 - 10 and Figure 15As shown: When cutting a single-crystal silicon wafer, first pass one end of the single-crystal silicon rod through the inside of the cleaning sleeve 402, and then place one end of it on the top of the mounting frame 401. After placing it well, move the first clamping plate 409 so that one side of the first clamping plate 409 fits against the outside of one end of the single-crystal silicon rod. When the first clamping plate 409 moves, it will drive the slider 4010 to slide inside the fixed block 407. When the first clamping plate 409 is in place, fix the nut 408 on the bolt at the top of the slider 4010 to fix the first clamping plate 409, thus completing the preliminary clamping of the single-crystal silicon rod. When the preliminary clamping of the single-crystal silicon rod is completed, rotate the handle 4020. When the handle 4020 rotates, it drives the worm 4022 to rotate. When the worm 4022 rotates, it drives the bidirectional screw 406 to rotate through the cooperation with the worm gear 4021. When the bidirectional screw 406 rotates, it can drive the two second clamping plates 4012 to move towards the middle position through the cooperation with the screw sleeve 4013, so that one side of the second clamping plate 4012 fits against one end of the single-crystal silicon rod, completing the secondary clamping of the single-crystal silicon rod. When the second clamping plate 4012 moves towards one side, it will push one end of the connecting plate 4016 to move towards one side and squeeze the telescopic spring 4015 to contract. Since the middle of the connecting plate 4016 is hinged to the fixed frame 4017, the other end of the connecting plate 4016 will move towards one side. When the other end of the connecting plate 4016 moves towards the other side, it will drive the piston 4018 to move inside the movable sleeve 4019, thereby sucking the air in the inner cavity of the first clamping plate 409. At this time, through the use of the suction holes 4011, the first clamping plate 409 can form a temporary sealed space with the outside of the single-crystal silicon rod. Since the air pressure in the sealed space decreases, a pressure difference is generated with the external atmospheric pressure, and the external atmospheric pressure will firmly squeeze the single-crystal silicon rod and the first clamping plate 409 together. Since after the first clamping plate 409 completes the preliminary clamping, the rubber pad 10 on one side of the first clamping plate 409 will fit against the surface of the single-crystal silicon rod. At this time, the staff injects water into the inside of the rubber pad 10 through the water injection port 11. When the 409 vacuum adsorption occurs, the rubber pad 10 will be squeezed, and the water inside the rubber pad 10 will flow out through the small holes on one side. There may be invisible unevenness or dust particles on the contact surface between the first clamping plate 409 and the single-crystal silicon rod, resulting in air infiltration inside. The water can fill these gaps, reduce the gap between the first clamping plate 409 and the single-crystal silicon rod, enhance the sealing performance, prevent external air from entering the inside of the first clamping plate 409 and destroying the vacuum state, and enhance the adsorption effect, thereby realizing the multiple clamping work of the single-crystal silicon rod, making the single-crystal silicon rod not prone to random movement during the processing process, and thus improving the processing accuracy of the single-crystal silicon rod;

[0048] After the single-crystal silicon rod is clamped, the external power supply starts the driving motor 3. After starting, the driving motor 3 drives the rotation of the lead screw inside the position moving component 5. When the lead screw rotates, it drives the single-crystal silicon rod at the top of the mounting bracket 401 to move to one side through the cooperation with the lead screw sleeve. The distance of the movement of the single-crystal silicon rod is controlled by the control panel on one side of the mounting base 2. When the driving motor 3 rotates, it drives the connection disk 405 to rotate through the belt. When the connection disk 405 rotates, it drives the connecting rod 404 to rotate. When the connecting rod 404 rotates, it drives the cleaning sleeve 402 to rotate through the belt. A limit seat is provided at the bottom end of the cleaning sleeve 402 to make the cleaning sleeve 402 more stable during rotation. When the cleaning sleeve 402 rotates, impurities such as dust, oxides, and metal ions on the surface of the single-crystal silicon rod can be cleaned by the semiconductor blue brush inside it. The setting of the semiconductor blue brush ensures that the surface of the silicon rod will not be secondarily polluted by electrostatic adsorption during cleaning. As the single-crystal silicon rod moves, the cleaning cotton 403 can perform secondary cleaning on the cleaned single-crystal silicon rod, making the surface of the single-crystal silicon rod cleaner during cutting. Cleaning impurities such as dust, oxides, and metal ions on the surface of the silicon rod can avoid problems such as cutting surface burrs and microcracks caused by foreign object interference during the cutting process, thereby ensuring the smoothness and flatness of the silicon wafer surface and achieving the effect of high-precision processing;

[0049] A filtering structure 6 is provided at the top of the workbench 1 at the bottom end of the cutting component 7. The filtering structure 6 includes a filtering box 6013. The filtering box 6013 is installed on one side of the top of the workbench 1. Support frames 602 are fixed on both sides of the top of the filtering box 6013. A filtering frame 606 is installed at the middle position of the support frames 602. A ceramic membrane 607 is installed inside the filtering frame 606. A servo motor 601 is installed on one side of the support frame 602. The output end of the servo motor 601 is connected to one side of the filtering frame 606; An extrusion disk 609 is installed on the outer side of the output end of the servo motor 601. A moving block 608 is installed inside one side of the support frame 602. A guiding block 6012 is installed on one side of the moving block 608. A connecting block 603 is fixed at the top of the moving block 608. An impact plate 605 is installed on one side of the bottom end of the connecting block 603. Two reset springs 604 are installed at both ends of one side of the bottom end of the connecting block 603. The bottom ends of the reset springs 604 are fixed to the top of the support frame 602. A collection plate 6010 is inserted into the filtering box 6013. A filter plate 6011 is inserted into the bottom end inside the filtering box 6013; There are two groups of extrusion disks 609, and the two groups of extrusion disks 609 are symmetrically distributed on the outer side of the output end of the connecting block 603.

[0050] Refer to Figures 11 - 14As shown: When the single-crystalline silicon rod moves to the bottom end of the cutting assembly 7, the cutting assembly 7 is started. After the cutting assembly 7 is started, the diamond wire is driven to rotate at high speed by a motor. When the diamond wire rotates, the height moving assembly 8 is started to drive the cutting assembly 7 to move downward to slice the single-crystalline silicon rod. During slicing, a cooling pipe can be externally connected to spray coolant to cool the cutting part of the single-crystalline silicon rod. When cooling waste liquid is generated during the slicing of the single-crystalline silicon rod, it will fall into the interior of the filter rack 606. At this time, the use of the ceramic membrane 607 can filter the cooling waste liquid. The cooling waste liquid contains diamond abrasives generated due to the wear of the diamond wire and silicon chips generated during the slicing of the single-crystalline silicon rod. When treating the cooling waste liquid from the silicon wafer cutting, the particle size of the diamond abrasives is usually >0.5μm and the particle size of the silicon chips is <0.3μm. Therefore, the ceramic membrane 607 has a pore size of 0.4μm, so that the diamond abrasives can be filtered, and the diamond abrasives remain on the surface of the ceramic membrane 607, while the silicon chips continue to fall into the interior of the filter box 6013 and are then filtered by the filter plate 6011. The filter plate 6011 is a ceramic membrane with a pore size of 0.2μm, so the silicon chips can be filtered out, realizing the separation and filtration of diamond abrasives and silicon chips. The filtered cooling waste liquid is discharged through the drain hole of the filter box 6013 for collection and secondary utilization. When the diamond abrasives need to be collected, the collection plate 6010 is inserted into the interior of the filter box 6013. After the insertion is completed, the servo motor 601 is started. After the servo motor 601 is started, it will drive the filter rack 606 to slowly turn 180°. When the filter rack 606 rotates, the servo motor 601 will also drive the extrusion disk 609 to rotate 180°. When the extrusion disk 609 rotates, it will squeeze the moving block 608 to move upward. One side of the extrusion block 608 is provided with an arc, and one side of the extrusion disk 609 is also provided with an arc. Therefore, when being squeezed, the moving block 608 will move upward. When the moving block 608 moves upward, it will push the connecting block 603 to move upward under the limit of the guiding block 6012. When the connecting block 603 moves, it will drive the impact plate 605 to move upward. When the impact plate 605 moves upward, it will drive the return spring 604 to be stretched. After the filter rack 606 rotates 180°, the moving block 608 will be inserted into the middle position between the two extrusion disks 609 under the pull-back of the return spring 604. When the return spring 604 pulls back, it will pull the impact plate 605 back to its original position and impact on both sides of the filter rack 606, violently vibrating the filter rack 606, so that the diamond abrasives filtered by the ceramic membrane 607 will vibrate and fall onto the surface of the collection plate 6010, completing the collection of the diamond abrasives. At this time, the collection plate 6010 and the filter plate 6011 are pulled out, and the separation, filtration and collection work of diamond abrasives and silicon chips can be completed, and finally the slicing work of the single-crystalline silicon wafer is completed.

[0051] Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A high-precision single crystal silicon wafer processing cutting device, characterized in that: It comprises a workbench (1) and a mounting base (2); A mounting seat (2) is fixed at the top of the workbench (1); a position moving assembly (5) is fixed at the top of the mounting seat (2); a clamping structure (4) is provided at the top of the position moving assembly (5); a driving motor (3) is installed on one side of the clamping structure (4); and a height moving assembly (8) is installed on one side of the top of the workbench (1); A cutting assembly (7) is installed on one side of the height moving assembly (8), a tensioning assembly (9) is provided at the rear end of the cutting assembly (7), the clamping structure (4) comprises a mounting frame (401), a mounting frame (401) is installed on one side of the top end of the position moving assembly (5), the bottom end of the mounting frame (401) is fixed to the surface of the inner thread sleeve of the position moving assembly (5), a bidirectional screw (406) is installed inside the mounting frame (401), and the outer side of the bidirectional screw (406) is provided with a screw threading device (406). A screw sleeve (4013) is installed, and a second clamping plate (4012) is fixed to the top of the screw sleeve (4013). A mounting box (4023) is fixed to one side of the mounting frame (401). A worm wheel (4021) is installed inside the mounting box (4023). One end of the worm wheel (4021) is fixed to one end of a bidirectional screw (406). A worm (4022) is installed on one side of the worm wheel (4021), and a handle (4020) is installed at the top of the worm (4022).

2. The high-precision single crystal silicon wafer processing cutting device according to claim 1, characterized in that: A fixing block (407) is installed on one side of the mounting frame (401), a sliding block (4010) is installed inside the fixing block (407), a first clamping plate (409) is installed on the top of the sliding block (4010), and a nut (408) is installed on one side of the top of the sliding block (4010).

3. The high-precision single crystal silicon wafer processing cutting device according to claim 2, characterized in that: A suction hole (4011) is provided on one side of the internal cavity of the first clamping plate (409), a loop (4019) is fixed on one side of the first clamping plate (409), a piston (4018) is installed inside the loop (4019), a fixing frame (4017) is installed on one end of the loop (4019) on one side of the first clamping plate (409), a connecting plate (4016) is hinged on one end of the fixing block (407), one end of the connecting plate (4016) is hinged to one side of the piston (4018), and a fixing plate (4014) is fixed on one side of the second clamping plate (4012).

4. The high-precision single crystal silicon wafer processing cutting device according to claim 3, characterized in that: A telescopic spring (4015) is fixed to one side of the other end of the connecting plate (4016), one end of the telescopic spring (4015) is fixed to one side of the first clamping plate (409), the telescopic spring (4015) and one side of the first clamping plate (409) form a telescopic structure, a rubber pad (10) is installed on the other side of the first clamping plate (409), and a water injection port (11) is installed on one side of the rubber pad (10).

5. The high-precision single crystal silicon wafer processing cutting device according to claim 1, characterized in that: The outer side of the bidirectional screw (406) is provided with an external thread, and the inner side of the screw sleeve (4013) is provided with an internal thread, so that a threaded connection is formed between the screw sleeve (4013) and the bidirectional screw (406).

6. The high-precision single crystal silicon wafer processing cutting device according to claim 1, characterized in that: The second clamping plates (4012) are provided in two groups, and the two groups of the second clamping plates (4012) are symmetrically distributed at the top of the mounting frame (401); a connecting rod (404) is installed on one side of the mounting seat (2); a connecting plate (405) is installed at one end of the connecting rod (404); a cleaning sleeve (402) is provided on one side of the connecting rod (404); a cleaning cotton (403) is installed at one end of the cleaning sleeve (402); and a single crystal silicon rod is inserted into the interior of the cleaning sleeve (402).

7. The high-precision single crystal silicon wafer processing cutting device according to claim 1, characterized in that: A filtering structure (6) is provided at the top of the workbench (1) at the bottom end of the cutting assembly (7), and the filtering structure (6) comprises a filtering box (6013), and the filtering box (6013) is installed on one side of the top of the workbench (1), and a supporting frame (602) is fixed on both sides of the top of the filtering box (6013), and a filtering frame (606) is installed at the middle position of the supporting frame (602), and a ceramic membrane (607) is installed inside the filtering frame (606), and a servo motor (601) is installed on one side of the supporting frame (602), and the output end of the servo motor (601) is connected to one side of the filtering frame (606).

8. The high-precision single crystal silicon wafer processing cutting device according to claim 7, characterized in that: An extrusion disk (609) is installed on the outer side of the output end of the servo motor (601), a moving block (608) is installed inside one side of the support frame (602), a guide block (6012) is installed on one side of the moving block (608), a connecting block (603) is fixed on the top of the moving block (608), an impact plate (605) is installed on one side of the bottom end of the connecting block (603), return springs (604) are installed on both ends of one side of the bottom end of the connecting block (603), the bottom end of the return spring (604) is fixed to the top of the support frame (602), a collecting plate (6010) is inserted into the interior of the filter box (6013), and a filter plate (6011) is inserted into the bottom end of the interior of the filter box (6013).

9. The high-precision single crystal silicon wafer processing cutting device according to claim 8, characterized in that: Two groups of the extrusion discs (609) are provided, and the two groups of the extrusion discs (609) are symmetrically distributed on the outer side of the output end of the connection block (603).

10. A high-precision single crystal silicon wafer cutting method according to claim 1, comprising the following steps, characterized in that: S1. When cutting a single crystal silicon wafer, first pass one end of the single crystal silicon rod through the inside of the cleaning sleeve 402, and then place one end of the single crystal silicon rod on the top of the mounting frame 401. After placing it, move the first clamping plate 409 so that one side of the first clamping plate 409 is attached to the outer side of one end of the single crystal silicon rod. When the first clamping plate 409 moves, it will drive the slider 4010 to slide inside the fixed block 407. When the first clamping plate 409 is attached, fix the nut 408 on the bolt at the top of the slider 4010 to fix the first clamping plate 409, thereby completing the preliminary clamping of the single crystal silicon rod. S2. After the initial clamping of the single crystal silicon rod is completed, the handle 4020 is turned. The handle 4020 drives the worm 4022 to rotate when it is turned. The worm 4022 drives the bidirectional screw 406 to rotate by cooperating with the worm wheel 4021 when it is rotated. The bidirectional screw 406 drives the two sets of second clamping plates 4012 to move to the middle position by cooperating with the screw sleeve 4013 when it is rotated, so that one side of the second clamping plate 4012 is attached to one end of the single crystal silicon rod, thereby completing the secondary clamping of the single crystal silicon rod; S3. When the second clamping plate 4012 moves to one side, it will push one end of the connecting plate 4016 to move to one side and squeeze the telescopic spring 4015 to contract. Since the middle of the connecting plate 4016 is hinged to the fixing frame 4017, the other end of the connecting plate 4016 will move to one side. When the other end of the connecting plate 4016 moves to the other side, it will drive the piston 4018 to move inside the loop 4019, thereby sucking away the air in the internal cavity of the first clamping plate 409. At this time, the first clamping plate 409 can form a temporary closed space with the outside of the single crystal silicon rod through the use of the suction hole 4011. Since the air pressure in the closed space is reduced, a pressure difference is generated between it and the external atmospheric pressure. The external atmospheric pressure will firmly squeeze the single crystal silicon rod and the first clamping plate 409 together. After 409 completes the initial clamping, the rubber pad 10 on one side of the first clamping plate 409 will fit with the surface of the single crystal silicon rod. At this time, the staff will inject water into the rubber pad 10 through the water injection port 11. When 409 is vacuum adsorbed, the rubber pad 10 will be squeezed, so that the water inside the rubber pad 10 will flow out through the small hole on one side. There may be bumps or dust particles invisible to the naked eye on the contact surface between the first clamping plate 409 and the single crystal silicon rod, causing air to penetrate into the interior. Water can fill these gaps, reduce the gap between the first clamping plate 409 and the single crystal silicon rod, enhance the sealing, prevent external air from entering the first clamping plate 409 to destroy the vacuum state, and enhance the adsorption effect, thereby realizing multiple clamping of the single crystal silicon rod, making it difficult for the single crystal silicon rod to move during the processing, thereby improving the processing accuracy of the single crystal silicon rod; S4. When the single crystal silicon rod is clamped, the external power supply starts the driving motor 3. After starting, the driving motor 3 will drive the internal screw of the position moving component 5 to rotate. When the screw rotates, it will move the single crystal silicon rod on the top of the mounting frame 401 to one side through the cooperation with the screw sleeve. The moving distance of the single crystal silicon rod is controlled by the control panel on the side of the mounting seat 2. When the driving motor 3 rotates, it will drive the connecting disk 405 to rotate through the belt. When the connecting disk 405 rotates, it will drive the connecting rod 404 to rotate. When the connecting rod 404 rotates, it will drive the cleaning sleeve 402 to rotate through the belt. A limited position seat is set at the bottom end of the cleaning sleeve 402, so that the cleaning sleeve 402 can be more stable when rotating. The cleaning sleeve 402 is more stable. When the cleaning sleeve 402 rotates, the semiconductor blue brush inside it can clean the dust, oxides, metal ions and other impurities on the surface of the single crystal silicon rod. The semiconductor blue brush is set so that it will not pollute the surface of the silicon rod again due to electrostatic adsorption during cleaning. As the single crystal silicon rod moves, the cleaning cotton 403 can perform secondary cleaning on the cleaned single crystal silicon rod, so that the surface of the single crystal silicon rod is cleaner when cutting. Cleaning the dust, oxides, metal ions and other impurities on the surface of the silicon rod can avoid problems such as burrs and micro cracks on the cut surface caused by interference from foreign matter during the cutting process, thereby ensuring the smoothness and flatness of the silicon wafer surface and achieving high-precision processing effects; S5. When the single crystal silicon rod moves to the bottom of the cutting assembly 7, the cutting assembly 7 is started. After starting, the cutting assembly 7 drives the diamond wire to rotate at high speed through the motor. When the diamond wire rotates, the height moving assembly 8 is started to drive the cutting assembly 7 to move downward to slice the single crystal silicon rod. When slicing, an external cooling pipe can be connected to spray coolant to cool the cut part of the single crystal silicon rod. When the single crystal silicon rod generates cooling waste liquid during slicing, it will fall into the inside of the filter frame 606. At this time, the use of ceramic membrane 607 can filter the cooling waste liquid. The cooling waste liquid contains diamond chips generated by the wear of the diamond wire and silicon generated by the single crystal silicon rod during slicing. When the cooling waste liquid of silicon wafer cutting is treated, the particle size of diamond grinding chips is usually >0.5μm and the particle size of silicon grinding chips is <0.3μm, so the ceramic membrane 607 has a pore size of 0.4μm, so that the diamond grinding chips can be filtered, so that the diamond grinding chips remain on the surface of the ceramic membrane 607, and the silicon grinding chips continue to fall into the interior of the filter box 6013, and then are filtered by the filter plate 6011. The filter plate 6011 is a ceramic membrane with a pore size of 0.2μm, so the silicon grinding chips can be filtered out, and the diamond grinding chips and silicon grinding chips can be separated and filtered. The filtered cooling waste liquid is discharged and collected through the drainage hole of the filter box 6013 for secondary utilization; S6. When it is necessary to collect diamond grinding chips, the collection plate 6010 is inserted into the interior of the filter box 6013. After the insertion is completed, the servo motor 601 is started. After starting, the servo motor 601 will drive the filter frame 606 to slowly flip 180°. When the filter frame 606 is rotating, the servo motor 601 will also drive the extrusion plate 609 to rotate 180°. One side of the extrusion moving block 608 is provided with an arc, and one side of the extrusion plate 609 is also provided with an arc, so when it is squeezed, the moving block 608 will move upward. When the extrusion plate 609 rotates, it will squeeze the moving block 608 to move upward. When the moving block 608 moves upward, it pushes the connecting block 603 to move upward under the limit of the guide block 6012. When the connecting block 603 moves, it will drive the collision The impact plate 605 moves upward, and when moving upward, the impact plate 605 will drive the return spring 604 to stretch. When the filter frame 606 rotates 180°, the moving block 608 will be inserted into the middle position of the two sets of extrusion disks 609 under the pullback of the return spring 604. When the return spring 604 is pulled back, it will pull the impact plate 605 back to its original position and hit the two sides of the filter frame 606, causing the filter frame 606 to vibrate violently, thereby vibrating the diamond chips filtered by the ceramic membrane 607 to fall onto the surface of the collection plate 6010, completing the collection of the diamond chips. At this time, the collection plate 6010 and the filter plate 6011 are pulled out to complete the separation, filtration and collection of the diamond chips and silicon chips, and finally complete the slicing of the single crystal silicon wafers.

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