A method for preparing a micro-nano layering structure with controllable layer sequence distribution

Abstract

The application discloses a micro-nano layering structure preparation method with controllable layer sequence distribution, and relates to the technical field of micro-nano layering, which forms a micro-nano layering structure by sequentially connecting at least one non-uniform layering device to an initial stacking layer; the initial stacking layer comprises at least one unit layer, the unit layer comprises at least one first layer body and at least one second layer body which are different in material, and the first layer body and the second layer body in the unit layer are arranged in an up-down staggered layering mode; the non-uniform layering device has a first shunt channel and a second shunt channel, and the initial stacking layer flows out from the corresponding first shunt outlet and second shunt outlet after being shunted at the first shunt inlet and second shunt inlet; the first shunt micro-layer and the second shunt micro-layer flow out and recombine together in an up-down layering structure. The method can realize the preparation of a micro-nano layering structure with a controllable number of layers and a controllable layer thickness, the equipment is smaller, and the flow stability is ensured.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of micro-nano layering technology, and particularly relates to a micro-nano layering structure preparation method with controllable layer sequence distribution. BACKGROUND

[0002] As a special gradient multilayer structure, the gradient micro-nano layering structure has a number of layers up to thousands or even tens of thousands, and can realize gradient variation of material composition or physical properties such as refractive index, electrical conductivity, thermal conductivity, etc. along the thickness direction by realizing gradient variation of the thickness of the single layer in the micro-nano scale, thereby having outstanding advantages in improving material performance and enhancing function, and has been used in the fields of material science, optics, structural engineering and nanotechnology.

[0003] The existing gradient micro-nano layering structure is mainly realized by a high-layer-number gradient distributor, which is provided with hundreds or thousands of slit channels, and the volume of the slit channels gradually varies, and the materials from different feeding devices are collected into the gradient micro-nano layering structure through the volume-gradually-varying slit units. Since the number of the layering structures prepared is the same as the number of the slit channels, when the number of layers exceeds 200, the device size will be large, which increases the residence time of the internal polymer melt extrusion, causes thermal degradation of the polymer and generates impurities, and in the extreme case, causes regular turbulent flow and destroys the micro-nano layering structure and the layer thickness gradient distribution, causing flow instability.

[0004] Therefore, the present application provides a high-layer-number micro-nano layering structure preparation method with controllable layer sequence distribution, which can realize controllability of the number of layers and the layer thickness, so as to solve the problems of large equipment and flow instability caused by high number of layers. SUMMARY

[0005] The present application aims to provide a micro-nano layering structure preparation method with controllable layer sequence distribution, so as to solve the problems of the prior art, realize preparation of the micro-nano layering structure with controllable number of layers and layer thickness, and make the equipment smaller, thereby ensuring flow stability.

[0006] To achieve the above object, the present application provides the following scheme:

[0007] The application provides a preparation method of a micro-nano layer structure with controllable layer sequence distribution. The method comprises the following steps: forming a micro-nano layer structure by sequentially connecting at least one non-uniform layer stacker to an initial stack layer; the initial stack layer comprises at least one unit layer, the unit layer comprises at least one first layer body and at least one second layer body, the material of the first layer body is different from that of the second layer body, and the first layer body and the second layer body in the unit layer are arranged in an alternating and staggered manner; the non-uniform layer stacker has a first shunt channel and a second shunt channel, the first shunt channel has a first shunt inlet and a first shunt outlet, and the first shunt outlet flows out a first shunt micro-layer; the second shunt channel has a second shunt inlet and a second shunt outlet, and the second shunt outlet flows out a second shunt micro-layer; the width of the first shunt micro-layer is the same as that of the second shunt micro-layer, and the height of the first shunt micro-layer is different from that of the second shunt micro-layer; the initial stack layer flows out from the corresponding first shunt outlet and second shunt outlet after being shunted at the first shunt inlet and second shunt inlet; and the first shunt micro-layer and the second shunt micro-layer flow out are recombined in an alternating and staggered manner.

[0008] Preferably, the unit layer is a plurality of unit layers, each of the unit layers is arranged in an alternating and staggered manner, and each of the first layer body and the second layer body in the initial stack layer is arranged in an alternating and staggered manner.

[0009] Preferably, the output material of the last non-uniform layer stacker is formed into the micro-nano layer structure by a twisting layer stacker; the twisting layer stacker has a first twisting channel and a second twisting channel, the first twisting channel has a first twisting inlet and a first twisting outlet, and the first twisting outlet flows out a first twisting micro-layer; the second twisting channel has a second twisting inlet and a second twisting outlet, and the second twisting outlet flows out a second twisting micro-layer; the output material of the last non-uniform layer stacker flows out from the corresponding first twisting outlet and second twisting outlet after being shunted at the first twisting inlet and second twisting inlet; and the first twisting micro-layer and the second twisting micro-layer flow out are recombined in an alternating and staggered manner; the layer arrangement of the input material of the first twisting inlet is consistent with the layer arrangement of the first twisting micro-layer as a whole after being flipped by 180°, and the layer arrangement of the input material of the second twisting inlet is consistent with the layer arrangement of the second twisting micro-layer as a whole; or, the layer arrangement of the input material of the first twisting inlet is consistent with the layer arrangement of the first twisting micro-layer as a whole, and the layer arrangement of the input material of the second twisting inlet is consistent with the layer arrangement of the second twisting micro-layer as a whole after being flipped by 180°.

[0010] Preferably, the initial stacked layers are formed into the micro-nano stacked structure after sequentially passing through at least one equal division layer stacker in series and then sequentially passing through at least one non-equal division layer stacker in series; the equal division layer stacker is used for equally dividing and multiplying the incoming material in an up-down stacked structure; the output port of the last equal division layer stacker is in communication with the input port of the first non-equal division layer stacker.

[0011] Preferably, the first shunt inlet and the second shunt inlet are located at the same position, and the first shunt inlet and the second shunt inlet are distributed left and right; the first shunt outlet and the second shunt outlet are located at the same position, and the first shunt outlet and the second shunt outlet are distributed up and down; the width of the first shunt inlet is W A , the width of the second shunt inlet is W B , the height of the first shunt inlet and the second shunt inlet is H; the width of the first shunt outlet and the width of the second shunt outlet are W, the height of the first shunt outlet is H A , and the height of the second shunt outlet is H B ; wherein W=W A +W B , and H=H A +H B .

[0012] Preferably, when the unit layer includes one first layer body and one second layer body, the raw material for forming the first layer body is supplied on the first plasticizing device, and the raw material for forming the second layer body is supplied on the second plasticizing device; the first plasticizing device and the second plasticizing device are respectively connected to the input end of the current combiner, and the output end of the current combiner is used to output the unit layer.

[0013] Preferably, the first plasticizing device and the second plasticizing device each include a melt pump and an extruder; and the rotation speed of the two melt pumps is adjustable.

[0014] Preferably, the first twisted micro-layer and the second twisted micro-layer are symmetrically distributed.

[0015] The present application has the following technical effects relative to the prior art:

[0016] The application provides a micro-nano layer stacking structure preparation method with controllable layer sequence distribution. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0018] Figure 1 The structure diagram of the non-uniform layer separator in the micro-nano layer stacking structure preparation method with controllable layer sequence distribution provided by the present application is shown in the figure.

[0019] Figure 2 The structure diagram of the twisting layer separator in the micro-nano layer stacking structure preparation method with controllable layer sequence distribution provided by the present application is shown in the figure.

[0020] Figure 3 The preparation process of the micro-nano layer stacking structure formed by the multiple non-uniform layer separators in the micro-nano layer stacking structure preparation method with controllable layer sequence distribution provided by the present application is shown in the figure.

[0021] Figure 4 The micro-nano layer stacking structure formed by the preparation process is shown in the figure. Figure 3 The layer structure shaping process of the micro-nano layer stacking structure formed by the preparation process is shown in the figure.

[0022] Figure 5 The preparation process of the micro-nano layer stacking structure formed by the multiple non-uniform layer separators and the twisting layer separator from the initial two-layer initial stacking layer in the micro-nano layer stacking structure preparation method with controllable layer sequence distribution provided by the present application is shown in the figure.

[0023] Figure 6 The micro-nano layer stacking structure formed by the preparation process is shown in the figure.Figure 5 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0024] Figure 7 For the preparation process of the micro-nano layer structure formed by the preparation process is shown in the figure; Figure 5 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0025] Figure 8 The initial stack layer of the initial multilayer in the micro-nano layer structure preparation method provided by the application is formed by a plurality of uniform layer stackers and a plurality of non-uniform layer stackers.

[0026] Figure 9 For the preparation process of the micro-nano layer structure formed by the preparation process is shown in the figure; Figure 8 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0027] Figure 10 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0028] Figure 11 The sequence distribution of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0029] Figure 12 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0030] Figure 13 The sequence distribution of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0031] Figure 14 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0032] Figure 15 The sequence distribution of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0033] Figure 16 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0034] Figure 17 The sequence distribution of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0035] Figure 18 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0036] Figure 19 The sequence distribution of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0037] Figure 20 The preparation process of the micro-nano layer structure in the micro-nano layer structure formed by the preparation process is shown in the figure;

[0038] Figure 21 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 6;

[0039] Figure 22 Preparation process corresponding to the micro-nano layer superposition structure of the specific case 7;

[0040] Figure 23 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 7;

[0041] Figure 24 Preparation process corresponding to the micro-nano layer superposition structure of the specific case 8;

[0042] Figure 25 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 8;

[0043] Figure 26 Preparation process corresponding to the micro-nano layer superposition structure of the specific case 9;

[0044] Figure 27 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 9;

[0045] Figure 28 Preparation process corresponding to the micro-nano layer superposition structure of the specific case 10;

[0046] Figure 29 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 10;

[0047] Figure 30 Preparation process corresponding to the micro-nano layer superposition structure of the specific case 11;

[0048] Figure 31 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 11;

[0049] Figure 32 Preparation process corresponding to the micro-nano layer superposition structure of the specific case 12;

[0050] Figure 33 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 12;

[0051] Figure 34 Preparation process corresponding to the micro-nano layer superposition structure of the specific case 13;

[0052] Figure 35 Sequence distribution corresponding to the micro-nano layer superposition structure of the specific case 13;

[0053] Figure 36 256-layer gradient micro-nano layer superposition film prepared by the micro-nano layer superposition structure preparation method with controllable layer sequence distribution provided by the application;

[0054] Figure 37The 512-layer gradient micro / nano stacked thin film prepared by the method for preparing micro / nano stacked structures with controllable layer sequence distribution provided by the present invention.

[0055] In the diagram: 1-First diversion channel; 2-Second diversion channel; 3-First torsion channel; 4-Second torsion channel. Detailed Implementation

[0056] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0057] The purpose of this invention is to provide a method for preparing micro / nano stacked structures with controllable layer sequence distribution, in order to solve the problems existing in the prior art, realize the preparation of micro / nano stacked structures with controllable number of layers and layer thickness, and make the equipment smaller and ensure flow stability.

[0058] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0059] Example 1

[0060] This embodiment provides a method for fabricating micro / nano-layered structures with controllable layer sequence distribution, such as... Figures 1 to 37 As shown, an initial stacked layer is passed through at least one non-uniform stacker connected in series to form a micro / nano stacked structure. The initial stacked layer includes at least one unit layer, and each unit layer includes at least one first layer and at least one second layer. The first and second layers are made of different materials, and the first and second layers in the unit layer are arranged in an alternating, vertical stack. The non-uniform stacker has a first diversion channel 1 and a second diversion channel 2. The first diversion channel 1 has a first diversion inlet and a first diversion outlet, and the first diversion outlet discharges the first diversion microlayer. The second diversion channel 2 has a second diversion inlet and a second diversion outlet, and the second diversion outlet discharges the second diversion microlayer. The first and second shunt microlayers have the same width, but their heights differ. The initial stacked layer is shunted at the first and second shunt inlets and then flows out from the corresponding first and second shunt outlets, respectively (i.e., the initial stacked layer is divided into two streams at the inlet of the non-uniform stacker; one stream flows out through the first shunt channel 1 and out through the first shunt outlet to form the first shunt microlayer, and the other stream flows out through the second shunt channel 2 and out through the second shunt outlet to form the second shunt microlayer). The outflowing first and second shunt microlayers are then recombined using the upper and lower stacked structures.

[0061] Through the design of the first shunt channel 1 and the second shunt channel 2, the initial stacked layers can be shunted, and after being separated by the first shunt channel 1 and the second shunt channel 2, each part is shaped, such as widening and thinning, so that the first shunt micro-layer and the second shunt micro-layer have a specific height difference. This makes the thickness of each layer in the micro-nano layered structure after recombination can be accurately controlled by adjusting the parameters of the shunt channel and the parameters of the initial layer, which is beneficial to prepare a structure with different layer thickness sequence distribution, that is, to form a micro-nano layered structure with specific performance requirements; the first layer body and the second layer body in the unit layer are arranged in turn in an alternating manner, which can make the initial stacked layers entering the non-uniform layering device have more rich layer structure, form different material combinations and layering sequences, and realize the regulation of multiple performances; it can realize the preparation of micro-nano layered structure through a plurality of non-uniform layering devices connected in turn, and the equipment is smaller, occupies less space, and only separates into two shunts and then recombines when passing through a single non-uniform layering device, which can ensure the stability of the flow.

[0062] Among them, the related description of the initial stacked layer is as follows:

[0063] In the optional scheme of the embodiment, preferably, as shown in Figure 4 , the unit layer is multiple, each unit layer is arranged in turn in an alternating manner, and each first layer body and each second layer body in the initial stacked layer are arranged in turn in an alternating manner (i.e., first layer body, second layer body, first layer body, …).

[0064] Specifically, taking the micro-nano layered structure for preparing an optical film as an example, the formation of the unit layer is specifically explained as follows:

[0065] In the optional scheme of the embodiment, preferably, as shown in Figure 4 , when the unit layer includes one first layer body (such as a high refractive index layer) and one second layer body (such as a low refractive index layer); the raw material for forming the first layer body is supplied on the first plasticizing device, and the raw material for forming the second layer body is supplied on the second plasticizing device; the first plasticizing device and the second plasticizing device are respectively connected to the input end of the flow combiner, and the output end of the flow combiner is used to output the unit layer.

[0066] In the optional scheme of the embodiment, preferably, as shown in Figure 3 , the first plasticizing device and the second plasticizing device each include a melt pump and an extruder (which is a prior art, and the connection and related parts not mentioned are consistent with the prior art, which will not be described in detail here) ; and the rotation speed of the two melt pumps can be adjusted.

[0067] Specifically, by adjusting the rotation speed ratio of the two melt pumps, the layer thickness ratio of the required first layer body and the second layer body can be controlled.

[0068] Specifically, regarding the number of layers of the unit layer, the following various cases can be included but are not limited to: ① the first case: the unit layer is a 2-layer structure formed by stacking the first layer body and the second layer body one above the other; ② the second case: the unit layer is a 4-layer structure formed by stacking the first layer body and the second layer body one above the other in turn.

[0069] Among them, the related setting of the non-uniform layer stacker is as follows:

[0070] Specifically, the first shunt channel 1 and the second shunt channel 2 are staggered in an overpass manner, and the entrances of the two are distributed in parallel on the left and right, while the exits are distributed in parallel on the top and bottom.

[0071] In the optional scheme of the present embodiment, as shown in Figure 1 , the first shunt inlet and the second shunt inlet are located at the same position, and the first shunt inlet and the second shunt inlet are distributed on the left and right; the first shunt outlet and the second shunt outlet are located at the same position, and the first shunt outlet and the second shunt outlet are distributed on the top and bottom; the width of the first shunt inlet is W A , the width of the second shunt inlet is W B , the height of the first shunt inlet and the second shunt inlet is H; the width of the first shunt outlet and the width of the second shunt outlet are W, the height of the first shunt outlet is H A , and the height of the second shunt outlet is H B ; wherein W=W A +W B , H=H A +H B . The spatial volume of the first shunt channel 1 is V A , and the spatial volume of the second shunt channel 2 is V B , V A / V B =R. (V A corresponding to the entrance and exit size of the first shunt channel 1 / first torsion channel 3, V B corresponding to the entrance and exit size of the second shunt channel 2 / second torsion channel 4, that is, R is associated with the entrance and exit size of the first shunt channel 1 and the second shunt channel 2 (or the first torsion channel 3 and the second torsion channel 4), and the focus is on the principle of its formation. The data settings can be set according to the required results) Through the setting of the above related parameters of the non-uniform layer stacker, the required layer structure of the output result can be realized, thereby realizing the controllability of the output result.

[0072] When an initial stack of m layers (m≥2) flows through a non-uniform stacker, it is cut into two stacks A and B with different widths at the inlet end. As they flow forward in their respective channels, they widen and thin, and then merge and overlap again in the thickness direction at the outlet end to form a stack C containing stacks A and B. The thickness ratio of the inner stacks A and B is R, and the number of layers in stack C is 2m.

[0073] When an initial stack of m layers (m≥2) flows through n non-uniform stackers with different R values ​​connected in series, a stack of mx2 layers can be formed. n And possess 2 n A micro / nano stacked structure with varying thickness distribution of stacked layers, preferably, when n non-uniformly stacked devices are connected in series according to their R values ​​from largest to smallest or smallest to largest, can achieve 2 n Gradient control of layer stacking thickness.

[0074] The following are the settings instructions for the twisted stacker:

[0075] Among the optional solutions in this embodiment, the more preferred one is as follows: Figure 2 , Figures 5 to 7 As shown, the output material of the last non-uniform stacker forms a micro / nano stacked structure after passing through a torsion stacker; the torsion stacker has a first torsion channel 3 and a second torsion channel 4. The first torsion channel 3 has a first torsion inlet and a first torsion outlet, and the first torsion microlayer flows out from the first torsion outlet; the second torsion channel 4 has a second torsion inlet and a second torsion outlet, and the second torsion microlayer flows out from the second torsion outlet; the output material of the last non-uniform stacker is split at the first torsion inlet and the second torsion inlet and flows out from the corresponding first torsion outlet and the second torsion outlet respectively; the outflowing first torsion microlayer and the outflowing second torsion microlayer recombined together with the upper and lower stacked structures; the... The layer arrangement of the input material at the first twist inlet is consistent with the layer arrangement of the first twist micro-layer after being rotated 180° (this refers to the consistency of the layer arrangement type, such as the layer structure arrangement of the input material at the first twist inlet being ABABAB.....B, and its layer structure arrangement after being rotated 180° being BABA......A), and the layer arrangement of the input material at the second twist inlet is consistent with the layer arrangement of the second twist micro-layer; or, the layer arrangement of the input material at the first twist inlet is consistent with the layer arrangement of the first twist micro-layer, and the layer arrangement of the input material at the second twist inlet is consistent with the layer arrangement of the second twist micro-layer after being rotated 180°.

[0076] Specifically, the twisted stacker is formed by rotating one of the channels (first diversion channel 1 or second diversion channel 2) by 180° based on the non-uniform stacker structure. For illustration purposes, as shown below... Figure 2As shown, the symbols representing the channel dimensions of the twisted stacker are consistent with those representing the channel dimensions of the non-uniform stacker.

[0077] Specifically, when the first and second torsional microlayers are symmetrically distributed, the torsional stacker is a symmetrical torsional stacker. That is, the output material of the last non-uniform stacker is divided into two identical streams. Each stream is output through the first torsional channel 3 and the second torsional channel 4 respectively. The output material is actually two identical structures, except that one of them is output in the form of being rotated 180° after passing through the corresponding flipping channel.

[0078] Specifically, when the torsion stacker is a symmetrical torsion stacker, the inlet and outlet dimensions of the two fishtail-shaped channels, the first torsion channel 3 and the second torsion channel 4, are the same. One of the channels (the first torsion channel 3 or the second torsion channel 4) is twisted 180 degrees along the flow direction. When a micro-nano stacked structure with multiple layers of distributed thickness flows through the symmetrical torsion stacker, it is cut into two layers X and Y with the same width and height at the inlet end. When the two flow forward in their respective channels, they achieve widening and thinning, and then merge and overlap again in the thickness direction at the outlet end to form a layer Z containing layers X and Y. In this case, the layers in the torsion channel undergo a 180-degree symmetrical flip, forming a micro-nano stacked structure with a symmetrical distribution of layer thickness. Preferably, when a micro-nano stacked melt with a gradually changing layer thickness passes through the symmetrical torsion stacker, a micro-nano stacked structure with a gradient of layer thickness and a symmetrical distribution can be prepared.

[0079] The following are the settings instructions for the uniform stacker:

[0080] Among the optional solutions in this embodiment, the more preferred one is as follows: Figure 8 As shown, the initial stacked layer passes through at least one uniform stacker connected in series and then through at least one non-uniform stacker connected in series to form a micro-nano stacked structure; the uniform stacker is used to evenly distribute and multiply the incoming material through the upper and lower stacked structures; the output port of the last uniform stacker is connected to the input port of the first non-uniform stacker.

[0081] Specifically, the equalization stacker is an existing device used to equally divide the input material and output the same layer structure, which is then reassembled in an up-and-down stacking manner to achieve the equalization and multiplication of the material's layer structure. It is existing equipment and technology, and will not be elaborated on further here.

[0082] Regarding the combination method:

[0083] Specifically, on the basis of preparing micro-nano layer structure by multiple non-uniform layer stackers, the following three combination methods can be derived, including but not limited to: ① The first kind: multiple non-uniform layer stackers cooperate with a twist layer stacker; ② The second kind: multiple uniform layer stackers cooperate with multiple non-uniform layer stackers; ③ The third kind: multiple uniform layer stackers cooperate with multiple non-uniform layer stackers and twist layer stackers in turn.

[0084] Among them, other related explanations:

[0085] Specifically, the micro-nano layer structure preparation method with controllable layer sequence distribution provided by the embodiment can be used to introduce the corresponding layer sequence arrangement micro-nano layer structure in high polymer film, sheet, pipe and hollow container; such as can be used with blown film forming technology to form gradient micro-nano layer stacked blown film preparation; can be used with blow molding technology to form gradient micro-nano layer stacked hollow product blow molding; can be used with casting / rolling technology to form gradient micro-nano layer stacked sheet / film material casting / rolling preparation.

[0086] Specific case 1:

[0087] This case discloses a micro-nano layer structure preparation method with controllable gradient layer sequence distribution, and its preparation process and layer structure distribution are as shown in Figure 10 and Figure 11 Two extruders (i.e. the extruders of the corresponding first plasticizing device and the second plasticizing device, the same meaning is used in the following cases, and will not be repeated) of A and B are fed through a flow combiner to form an initial 2-layer structure (i.e. unit layer, the same meaning is used in the following cases, and will not be repeated), and then sequentially flow through four 1:1 uniform layer stackers in series to form an initial 32-layer uniform layer stack, and then the 32-layer melt stack flows through five non-uniform layer stackers with increasing division ratios in turn, i.e. non-uniform layer stacker 1 (0.92 / 1, i.e. R value), non-uniform layer stacker 2 (0.85 / 1), non-uniform layer stacker 3 (0.72 / 1), non-uniform layer stacker 4 (0.51 / 1), and non-uniform layer stacker 5 (0.26 / 1), to form a 32-layer thickness distribution, a total of 1024 layers of gradient micro-nano layer structure with 32 layers in each layer thickness distribution.

[0088] Specific case 2

[0089] This case discloses a micro-nano layer structure preparation method with controllable gradient layer sequence distribution, and its preparation process and layer structure distribution are as shown in Figure 12 and Figure 13As shown in the drawings. Two A, B extruders feed through the current collector to form the initial 2-layer structure, sequentially flow through 4 series of non-uniform layer stackers to form the initial 32-layer non-uniform structure, and the 32-layer gradient layer thickness melt stack flows through 5 non-uniform layer stackers with increasing division ratios, i.e. non-uniform layer stacker 1 (0.92 / 1), non-uniform layer stacker 2 (0.85 / 1), non-uniform layer stacker 3 (0.72 / 1), non-uniform layer stacker 4 (0.51 / 1), and non-uniform layer stacker 5 (0.26 / 1), to obtain a gradient micro-nano layer stack structure with a total number of 1024 layers and a uniform and gradually changing layer thickness, which eliminates the gradient steps caused by the previous uniform distribution process.

[0090] Specific case 3

[0091] The present case discloses a micro-nano layer stack structure preparation method with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in Figure 14 and Figure 15 As shown in the drawings. Two A, B extruders feed through the current collector to form the initial 2-layer structure, sequentially flow through 4 series of non-uniform layer stackers a, b, c, d to form the initial 32-layer layer thickness gradient structure, and the 32-layer gradient layer thickness melt stack flows through 5 non-uniform layer stackers with increasing division ratios, i.e. non-uniform layer stacker 1 (0.92 / 1), non-uniform layer stacker 2 (0.85 / 1), non-uniform layer stacker 3 (0.72 / 1), non-uniform layer stacker 4 (0.51 / 1), and non-uniform layer stacker 5 (0.26 / 1), to obtain a multi-layer melt with a total number of 1024 layers and a uniform and gradually changing layer thickness, and then flow through a twisting layer stacker. The multi-layer melt is twisted by 180° in the flow channel of the twisting layer stacker and doubled, forming a gradient micro-nano layer stack structure with a total number of 2048 layers and a uniform and gradually changing layer thickness symmetrically distributed.

[0092] Specific case 4

[0093] The present case discloses a micro-nano layer stack structure preparation method with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in Figure 16 and Figure 17 As shown in the drawings. Two A, B extruders feed through the current collector to form the initial 2-layer structure, sequentially flow through 4 series of non-uniform layer stackers a, b, c, d to form the initial 32-layer layer thickness gradient structure, and the 32-layer gradient layer thickness melt stack flows through 5 non-uniform layer stackers with increasing division ratios, i.e. non-uniform layer stacker 1 (0.92 / 1), non-uniform layer stacker 2 (0.85 / 1), non-uniform layer stacker 3 (0.72 / 1), non-uniform layer stacker 4 (0.51 / 1), and non-uniform layer stacker 5 (0.26 / 1), to obtain a multi-layer melt with a total number of 1024 layers and a uniform and gradually changing layer thickness, and then flow through a twisting layer stacker. The multi-layer melt is twisted by 180° in the flow channel of the twisting layer stacker and doubled, forming a gradient micro-nano layer stack structure with a total number of 2048 layers and a uniform and gradually changing layer thickness symmetrically distributed.

[0094] Specific case 5

[0095] The present case discloses a micro-nano layer stack structure preparation method with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in Figure 18and Figure 19 The two A and B extruders supply materials through the flow combiner to form an initial 2-layer equal-thickness structure, and the two-layer melt flows through five non-uniform layer stackers with increasing division ratios in sequence, i.e., non-uniform layer stacker 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.92 / 1), non-uniform layer stacker 4 (0.84 / 1), and non-uniform layer stacker 5 (0.90 / 1) to form each layer thickness distribution of 2 layers, with a gradient ratio of 1.5, a 64-layer linear step gradient micro-nano layer stack structure with 32 layer thickness distributions.

[0096] Specific case 6

[0097] The present case discloses a micro-nano layer stack structure preparation method with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in Figure 20 and Figure 21 The two A and B extruders supply materials through the flow combiner to form an initial 2-layer equal-thickness structure, and the two-layer melt flows through five non-uniform layer stackers with increasing division ratios in sequence, i.e., non-uniform layer stacker 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.92 / 1), non-uniform layer stacker 4 (0.84 / 1), and non-uniform layer stacker 5 (0.55 / 1) to form each layer thickness distribution of 2 layers, with a gradient ratio of 2.7, a 64-layer linear step gradient micro-nano layer stack structure with 32 layer thickness distributions.

[0098] Specific case 7

[0099] The present case discloses a micro-nano layer stack structure preparation method with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in Figure 22 and Figure 23 The two A and B extruders supply materials through the flow combiner to form an initial 2-layer equal-thickness structure, and the two-layer melt flows through five non-uniform layer stackers with increasing division ratios in sequence, i.e., non-uniform layer stacker 1 (0.99 / 1), non-uniform layer stacker 2 (0.97 / 1), non-uniform layer stacker 3 (0.92 / 1), non-uniform layer stacker 4 (0.84 / 1), and non-uniform layer stacker 5 (0.90 / 1) to form each layer thickness distribution of 2 layers, with a gradient ratio of 1.5, a 64-layer linear step gradient micro-nano layer stack structure with 32 layer thickness distributions.

[0100] Specific case 8

[0101] The present case discloses a micro-nano layer stack structure preparation method with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in Figure 24 and Figure 25As shown. A, B two extruders feed through the current collector to form the initial 2 layers of equal thickness structure, 2 layers of melt flow through 5 non-uniform layering devices with increasing proportion of 1 (0.95 / 1), non-uniform layering device 2 (0.90 / 1), non-uniform layering device 3 (0.82 / 1), non-uniform layering device 4 (0.66 / 1), non-uniform layering device 5 (0.45 / 1) to form each layer thickness distribution 2 layers, gradient ratio 4.9 with 32 layer thickness distribution of 64 layers of melt, and then flow through the twist layering device The multi-layer melt is twisted by 180° in the twist layering device flow channel and multiplied to form a gradient micro-nano layering structure with a total number of 128 layers and a symmetric distribution of layer thickness.

[0102] Specific case 9

[0103] This case discloses a method for preparing a gradient layer sequence distribution controllable micro-nano layering structure, and the preparation process and layer structure distribution are as shown in Figure 26 and Figure 27 As shown. A, B two extruders feed through the current collector to form the initial 2 layers of equal thickness structure, 2 layers of melt flow through 5 non-uniform layering devices with increasing proportion of 1 (0.95 / 1), non-uniform layering device 2 (0.90 / 1), non-uniform layering device 3 (0.82 / 1), non-uniform layering device 4 (0.66 / 1), non-uniform layering device 5 (0.45 / 1) to form each layer thickness distribution 2 layers, gradient ratio 4.9 with 32 layer thickness distribution of 64 layers of melt, and then flow through the twist layering device The multi-layer melt is twisted by 180° in the twist layering device flow channel and multiplied to form a gradient micro-nano layering structure with a total number of 128 layers and a symmetric distribution of layer thickness.

[0104] Specific case 10

[0105] This case discloses a method for preparing a gradient layer sequence distribution controllable micro-nano layering structure, and the preparation process and layer structure distribution are as shown in Figure 28 and Figure 29 As shown. A, B two extruders feed through the current collector to form the initial 2 layers of equal thickness structure, 2 layers of melt flow through 5 non-uniform layering devices with increasing proportion of 1 (0.95 / 1), non-uniform layering device 2 (0.90 / 1), non-uniform layering device 3 (0.82 / 1), non-uniform layering device 4 (0.66 / 1), non-uniform layering device 5 (0.45 / 1) to form each layer thickness distribution 2 layers, gradient ratio 4.9 with 32 layer thickness distribution of 64 layers of melt, and then flow through the twist layering device The multi-layer melt is twisted by 180° in the twist layering device flow channel and multiplied to form a gradient micro-nano layering structure with a total number of 128 layers and a symmetric distribution of layer thickness.

[0106] Specific case 11

[0107] This case discloses a method for preparing a gradient layer sequence distribution controllable micro-nano layering structure, and the preparation process and layer structure distribution are as shown in Figure 30 and Figure 31As shown in the figure. Two extruders A and B supply materials through the current collector to form an initial 2-layer non-equal-thickness structure, and the 2-layer melt flows through 2 non-uniform layering devices to form an 8-layer melt stack with a small gradient, and then flows through 5 non-uniform layering devices 1 (0.95 / 1), non-uniform layering device 2 (0.90 / 1), non-uniform layering device 3 (0.82 / 1), non-uniform layering device 4 (0.66 / 1), and non-uniform layering device 5 (0.45 / 1) with increasing segmentation ratios to form a gradient ratio of 4.9, a total of 256 layers of gradient micro-nano layering structure with uniform layer thickness and nonlinear gradient, eliminating the gradient steps caused by the previous uniform distribution process.

[0108] Specific case 12

[0109] The present case discloses a method for preparing a micro-nano layering structure with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in the figures. Figure 32 and Figure 33 As shown in the figure. Two extruders A and B supply materials through the current collector to form an initial 2-layer non-equal-thickness structure, and the 2-layer melt flows through 2 non-uniform layering devices to form an 8-layer melt stack with a small gradient, and then flows through 5 non-uniform layering devices 1 (0.95 / 1), non-uniform layering device 2 (0.90 / 1), non-uniform layering device 3 (0.82 / 1), non-uniform layering device 4 (0.66 / 1), and non-uniform layering device 5 (0.45 / 1) with increasing segmentation ratios to form a gradient ratio of 4.9, a total of 256 layers of gradient micro-nano layering structure with uniform layer thickness and nonlinear gradient, eliminating the gradient steps caused by the previous uniform distribution process.

[0110] Specific case 13

[0111] The present case discloses a method for preparing a micro-nano layering structure with controllable gradient layer sequence distribution, and the preparation process and layer structure distribution are as shown in the figures. Figure 34 and Figure 35 As shown in the figure. Two extruders A and B supply materials through the current collector to form an initial 2-layer non-equal-thickness structure, and the 2-layer melt flows through 2 non-uniform layering devices to form an 8-layer melt stack with a small gradient, and then flows through 5 non-uniform layering devices 1 (0.95 / 1), non-uniform layering device 2 (0.90 / 1), non-uniform layering device 3 (0.82 / 1), non-uniform layering device 4 (0.66 / 1), and non-uniform layering device 5 (0.45 / 1) with increasing segmentation ratios to form a gradient ratio of 4.9, a total of 256 layers of gradient micro-nano layering structure with uniform layer thickness and nonlinear gradient, eliminating the gradient steps caused by the previous uniform distribution process.

[0112] In the present application, specific examples are applied to illustrate the principles and implementation methods of the present application. The above examples are only used to help understand the method and core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, the specific implementation method and application range will be changed. In summary, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A method for fabricating micro / nano stacked structures with controllable layer sequence distribution, characterized in that: The initial stack layer is formed into a micro-nano layer stack structure through at least one non-uniform layer stacker in series; The initial stack layer includes at least one unit layer, the unit layer includes at least one first layer body and at least one second layer body, the material of the first layer body is different from that of the second layer body, and the first layer body and the second layer body in the unit layer are arranged in an alternating stack structure; The non-uniform layer stacker has a first shunt channel and a second shunt channel, the first shunt channel has a first shunt inlet and a first shunt outlet, and the first shunt outlet flows out the first shunt micro-layer; The second shunt channel has a second shunt inlet and a second shunt outlet, and the second shunt outlet flows out the second shunt micro-layer; The first shunt micro-layer and the second shunt micro-layer have the same width, and the height of the first shunt micro-layer is different from that of the second shunt micro-layer; The initial stack layer is divided into the first shunt outlet and the second shunt outlet at the first shunt inlet and the second shunt inlet; The first shunt micro-layer and the second shunt micro-layer are recombined in an alternating stack structure; The first shunt inlet and the second shunt inlet are located at the same position, and the first shunt inlet and the second shunt inlet are distributed left and right; The first shunt outlet and the second shunt outlet are located at the same position, and the first shunt outlet and the second shunt outlet are distributed up and down; The width of the first shunt inlet is W A The width of the second shunt inlet is W B The height of the first shunt inlet and the second shunt inlet is H The width of the first shunt outlet and the width of the second shunt outlet are both W, the height of the first shunt outlet is H A , and the height of the second shunt outlet is H B . where W = W A + W B , H = H A + H B .

2. The method for preparing the micro-nano layer structure with controllable layer sequence distribution according to claim 1, characterized in that: The unit layer is a plurality of unit layers, each unit layer is arranged in an alternating stack structure, and each first layer body and each second layer body in the initial stack layer are arranged in an alternating stack structure.

3. The method for preparing the micro-nano layer structure with controllable layer sequence distribution according to claim 1, characterized in that: The output material of the last non-uniform layer stacker is formed into the micro-nano layer stack structure through a twist layer stacker; The twist layer stacker has a first twist channel and a second twist channel, the first twist channel has a first twist inlet and a first twist outlet, and the first twist outlet flows out the first twist micro-layer; the second twist channel has a second twist inlet and a second twist outlet, and the second twist outlet flows out the second twist micro-layer; the output material of the last non-uniform layer stacker is divided into the first twist outlet and the second twist outlet at the first twist inlet and the second twist inlet; the first twist micro-layer and the second twist micro-layer are recombined in an alternating stack structure; The layer arrangement of the input material of the first twist inlet is flipped by 180° and is consistent with the layer arrangement of the first twist micro-layer as a whole, and the layer arrangement of the input material of the second twist inlet is consistent with the layer arrangement of the second twist micro-layer as a whole; Or, the layer arrangement of the input material of the first twist inlet is consistent with the layer arrangement of the first twist micro-layer as a whole, and the layer arrangement of the input material of the second twist inlet is flipped by 180° and is consistent with the layer arrangement of the second twist micro-layer as a whole.

4. The method for preparing the micro-nano layer structure with controllable layer sequence distribution according to claim 1, characterized in that: The initial layer stack is sequentially passed through at least one uniform layer stacker in series and then sequentially passed through at least one non-uniform layer stacker in series to form the micro-nano layer stack structure. The uniform layer stacker is used to multiply the incoming material in an up-down layer stack structure; The output port of the last uniform layer stacker is in communication with the input port of the first non-uniform layer stacker.

5. The method for preparing the micro-nano layer structure with controllable layer sequence distribution according to claim 1, wherein: When the unit layer comprises one first layer body and one second layer body, the raw material for forming the first layer body is supplied to a first plasticizing device, and the raw material for forming the second layer body is supplied to a second plasticizing device; the first plasticizing device and the second plasticizing device are respectively connected to the input end of a flow combiner, and the output end of the flow combiner is used to output the unit layer.

6. The method for preparing the micro-nano layer structure with controllable layer sequence distribution according to claim 5, wherein: The first plasticizing device and the second plasticizing device each comprise a melt pump and an extruder; and the rotation speed of the two melt pumps is adjustable.

7. The method for fabricating micro / nano stacked structures with controllable layer sequence distribution according to claim 3, characterized in that: The first twisted micro-layer and the second twisted micro-layer are symmetrically distributed.

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