A method, system, device and storage medium for measuring initial sheet resistance of a thin film

Abstract

The application discloses a film forming initial square resistance measurement method, system, device and storage medium, and belongs to the technical field of resistance measurement. The method comprises the following steps: establishing a theoretical relationship formula of the initial square resistance of a film, the interval time from the film forming moment to the measurement moment, and the square resistance measurement value at the measurement moment; acquiring the interval time from the film forming moment to the preset measurement moment and the square resistance measurement value at the preset measurement moment of the film to be measured; and determining the theoretical initial square resistance value of the film to be measured according to the interval time from the film forming moment to the preset measurement moment, the square resistance measurement value at the preset measurement moment and the theoretical relationship formula. The application establishes a theoretical relationship formula of the initial square resistance of a film, the interval time from the film forming moment to the measurement moment, and the square resistance measurement value at the measurement moment. Based on the theoretical relationship formula, the initial square resistance can be obtained by acquiring the square resistance measurement value after film forming and the corresponding interval time from the film forming moment to the measurement moment, and therefore, the influence of the measurement time on the film square resistance measurement result can be reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of resistance measurement, and in particular to a method, system and device for measuring initial sheet resistance of a thin film, and a computer readable storage medium. BACKGROUND

[0002] In the semiconductor manufacturing industry, for metal thin film deposition equipment (including but not limited to physical vapor deposition (PVD), chemical vapor deposition (CVD), etc.), a certain thickness of thin film needs to be deposited, and then the sheet resistance (hereinafter referred to as sheet resistance) and thickness thereof are measured, according to which the resistance, resistivity, etc. of the thin film can be determined to monitor the process quality of the equipment. However, when the metal thin film is exposed to air, the surface layer will be oxidized, resulting in a change in the surface layer resistance, and the oxidation will continue to intensify as the exposure time increases, which is specifically manifested in that the sheet resistance of the metal thin film will continue to increase as the interval time from film formation to measurement becomes longer. In advanced technology nodes of semiconductors, the deposition thickness of some metal thin film processes is reduced to the nanometer level, and the resistance caused by the surface oxidation of such film layer accounts for a higher and higher proportion in the measurement, which brings great interference to the monitoring and determination of the quality of the thin film deposition. SUMMARY

[0003] The purpose of the present application is to provide a method, system, device and computer readable storage medium for measuring initial sheet resistance of a thin film, so as to reduce the influence of measurement time on the measurement result of the sheet resistance of the thin film.

[0004] To achieve the above-mentioned purpose, the present application provides a method for measuring initial sheet resistance of a thin film, comprising:

[0005] establishing a theoretical relationship between the initial sheet resistance of a thin film, the interval time from the film formation time to the measurement time, and the sheet resistance measurement value at the measurement time;

[0006] obtaining the interval time from the film formation time to the preset measurement time and the sheet resistance measurement value at the preset measurement time of the thin film to be measured;

[0007] determining the theoretical initial sheet resistance value of the thin film to be measured according to the interval time from the film formation time to the preset measurement time, the sheet resistance measurement value at the preset measurement time, and the theoretical relationship.

[0008] Optionally, the establishing a theoretical relationship between the initial sheet resistance of a thin film, the interval time from the film formation time to the measurement time, and the sheet resistance measurement value at the measurement time comprises:

[0009] obtaining the sheet resistance measurement values of the film samples with different thicknesses at different measurement times after the film forming time under the condition that the atmospheric environment parameters and other film characteristic parameters except thickness are unchanged, and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values;

[0010] establishing a theoretical relationship of the initial sheet resistance of the film, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time according to the sheet resistance measurement values at different measurement times, and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values.

[0011] Optionally, the obtaining the sheet resistance measurement values of the film samples with different thicknesses at different measurement times after the film forming time under the condition that the atmospheric environment parameters and other film characteristic parameters except thickness are unchanged, and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values, comprises:

[0012] obtaining the sheet resistance measurement values of the film samples with different thicknesses at different measurement times after the film forming time under the condition that the atmospheric environment parameters and other film characteristic parameters except thickness are unchanged, and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values; the interval time is greater than 10 minutes.

[0013] Optionally, the theoretical relationship is:

[0014] Rm=f(t,R0)=a×ln(t)+(b×R0+c)×t+d×R0+e;

[0015] wherein, R0 represents the initial sheet resistance; Rm represents the sheet resistance measurement value at the measurement time; t represents the interval time from the measurement time to the film forming time; a represents a first function related to the atmospheric environment parameters and the film characteristic parameters; b represents a second function related to the atmospheric environment parameters and the film characteristic parameters; c represents a third function related to the atmospheric environment parameters and the film characteristic parameters; d represents a fourth function related to the atmospheric environment parameters and the film characteristic parameters; e represents a fifth function related to the atmospheric environment parameters and the film characteristic parameters.

[0016] Optionally, the obtaining the sheet resistance measurement value at the preset measurement time comprises:

[0017] obtaining the sheet resistance measurement value at the preset measurement time detected by a four-probe sheet resistance tester.

[0018] To achieve the above object, the application further provides a film initial sheet resistance measurement system, which comprises:

[0019] a theoretical relationship establishing module, configured to establish a theoretical relationship of the initial sheet resistance of the film, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time;

[0020] a data acquisition module, configured to acquire the interval time from the film forming time to the preset measurement time and the sheet resistance measurement value at the preset measurement time of the film to be measured;

[0021] a theoretical initial sheet resistance value calculation module, configured to determine the theoretical initial sheet resistance value of the film to be measured according to the interval time from the film forming time to the preset measurement time, the sheet resistance measurement value at the preset measurement time, and the theoretical relationship.

[0022] Optionally, the theoretical relationship establishing module comprises:

[0023] a sample data acquisition unit, configured to acquire the sheet resistance measurement values of the film sample with different thicknesses at different measurement times after the film forming time, and the interval times from the film forming time to the measurement times corresponding to the sheet resistance measurement values, under the condition that the atmospheric environment parameters and other film characteristic parameters except the thickness are unchanged;

[0024] a theoretical relationship establishing unit, configured to establish a theoretical relationship of the initial sheet resistance of the film, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time, according to the sheet resistance measurement values at different measurement times and the interval times from the film forming time to the measurement times corresponding to the sheet resistance measurement values.

[0025] Optionally, the sample data acquisition unit is specifically configured to:

[0026] acquire the sheet resistance measurement values of the film sample with different thicknesses at different measurement times after the film forming time, and the interval times from the film forming time to the measurement times corresponding to the sheet resistance measurement values, under the condition that the atmospheric environment parameters and other film characteristic parameters except the thickness are unchanged; the interval time is greater than 10 minutes.

[0027] To achieve the above object, the application further provides a film initial sheet resistance measurement device, which comprises:

[0028] a memory, configured to store a computer program;

[0029] a processor, configured to execute the computer program to realize the steps of the film initial sheet resistance measurement method.

[0030] To achieve the above object, the application further provides a computer readable storage medium, wherein the computer readable storage medium stores a computer program, and the computer program is executed by a processor to implement the steps of the method for measuring initial sheet resistance of thin film after film formation.

[0031] The application provides a method for measuring initial sheet resistance of thin film after film formation, which comprises the following steps: establishing a theoretical relationship formula of initial sheet resistance of thin film, interval time from film formation time to measurement time and sheet resistance measurement value at the measurement time; obtaining the interval time from the film formation time to a preset measurement time and the sheet resistance measurement value at the preset measurement time of a to-be-measured thin film; and determining a theoretical initial sheet resistance value of the to-be-measured thin film according to the interval time from the film formation time to the preset measurement time, the sheet resistance measurement value at the preset measurement time and the theoretical relationship formula.

[0032] Obviously, the application establishes a theoretical relationship formula of initial sheet resistance of thin film, interval time from film formation time to measurement time and sheet resistance measurement value at the measurement time. Based on the theoretical relationship formula, the initial sheet resistance can be obtained by obtaining the sheet resistance measurement value after film formation and the interval time from the film formation time to the measurement time, so that the influence of measurement time on the sheet resistance measurement result of the thin film can be reduced, and the process quality of the equipment can be better monitored. The application further provides a system for measuring initial sheet resistance of thin film after film formation, an apparatus and a computer readable storage medium, which have the above beneficial effects. BRIEF DESCRIPTION OF DRAWINGS

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only embodiments of the application, and for those skilled in the art, other drawings can be obtained without creative labor based on the provided drawings.

[0034] Figure 1 A flow chart of a method for measuring initial sheet resistance of thin film after film formation provided by the embodiments of the application;

[0035] Figure 2 A flow chart of a method for measuring initial sheet resistance of thin film after film formation provided by the embodiments of the application;

[0036] Figure 3 A relationship diagram between sheet resistance and measurement time of metal thin film under different thickness conditions provided by the embodiments of the application;

[0037] Figure 4 A structural block diagram of a system for measuring initial sheet resistance of thin film after film formation provided by the embodiments of the application. DETAILED DESCRIPTION

[0038] To make the purposes, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort belong to the scope of protection of the present application.

[0039] Reference is made to Figure 1 , Figure 1 A flowchart of a method for measuring an initial sheet resistance of a thin film according to an embodiment of the present application is provided. The method can include:

[0040] S101: establishing a theoretical relationship of an initial sheet resistance of a thin film, an interval time from a film forming time to a measurement time, and a sheet resistance measurement value at the measurement time.

[0041] It should be noted that the thin film in the embodiments includes but is not limited to a metal thin film, and can also be applicable to a thin film that is easily oxidized by a gas.

[0042] The atmospheric composition, temperature and humidity, and pH value in a semiconductor manufacturing workshop are controlled within a very stable level. In this environment, the sheet resistance of the thin film has an approximate functional relationship with the film composition, density, lattice coefficient, thickness, and time exposed to air. The embodiments do not limit the specific manner of establishing the theoretical relationship, for example, different thicknesses of the thin film sample can be obtained under the condition that the atmospheric environment parameters and other film characteristic parameters except thickness are constant, and the sheet resistance measurement values at different measurement times after the film forming time and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values can be measured. The theoretical relationship of the initial sheet resistance of the thin film, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time can be established according to the sheet resistance measurement values at each measurement time and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values. This manner is to establish the theoretical relationship by changing only the thickness under the condition that the atmospheric environment parameters and other film characteristic parameters except thickness are constant, according to the measured multiple sets of sheet resistance measurement values and interval time data at different thicknesses.

[0043] In addition, any film characteristic parameter except thickness can be changed in the embodiments, and the atmospheric environment parameters and other film characteristic parameters except the parameter can be controlled to be constant. The sheet resistance measurement values at different measurement times after the film forming time of the thin film sample under this condition and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values can be obtained. The theoretical relationship of the initial sheet resistance of the thin film, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time can be established according to the sheet resistance measurement values at each measurement time and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement values.

[0044] The embodiment is not limited to the specific structure of the theoretical relationship, and different theoretical relationships can be obtained by using different ways of establishing the theoretical relationship. For example, when the theoretical relationship is established according to a plurality of groups of sheet resistance measurement values and interval time data under the condition of changing the thickness, the established theoretical relationship can be:

[0045] Rm=f(t,R0)=a x ln(t)+(b x R0+c) x t+d x R0+e;

[0046] wherein R0 represents an initial sheet resistance; Rm represents a sheet resistance measurement value at a measurement time; t represents an interval time from the measurement time to a film forming time; a represents a first function related to an atmospheric environment parameter and a thin film characteristic parameter; b represents a second function related to the atmospheric environment parameter and the thin film characteristic parameter; c represents a third function related to the atmospheric environment parameter and the thin film characteristic parameter; d represents a fourth function related to the atmospheric environment parameter and the thin film characteristic parameter; and e represents a fifth function related to the atmospheric environment parameter and the thin film characteristic parameter.

[0047] It should be noted that the function values of a, b, c, d, and e are related to the composition, density, thickness, and other characteristics of the thin film and the atmospheric environment. When the atmospheric environment conditions (composition, temperature and humidity, pH, etc.) and the main characteristics of the thin film (such as composition, density, lattice coefficient, etc.) are determined, and the thickness changes little, the function values of a, b, c, d, and e can be approximately considered as constants. Therefore, the following theoretical relationship can be obtained by inversely deducing from the formula:

[0048]

[0049] In addition, it should be noted that when the theoretical relationship is established according to a plurality of groups of sheet resistance measurement values and interval time data under the condition of changing other thin film characteristic parameters except the thickness, the function values of a, b, c, d, and e change with the change of the thin film characteristic parameters. And when the changed thin film characteristic parameters change little, the function values of a, b, c, d, and e can also be approximately considered as constants.

[0050] The embodiment is not limited to obtaining sheet resistance measurement values of the thin film sample at different measurement times after the film forming time, and the way of obtaining the sheet resistance measurement values can be determined according to the selected sheet resistance measurement method. For example, it can be to obtain the sheet resistance measurement values of the thin film sample at different measurement times after the film forming time detected by the four-probe sheet resistance tester.

[0051] Further, since the sheet resistance at the film forming time cannot be guaranteed to be measured immediately after film forming, in the embodiment, the sheet resistance of the film sample of different thicknesses is measured at different time intervals after the film forming time, and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement value, under the condition that the atmospheric environment parameters and other film characteristic parameters except thickness remain unchanged.

[0052] S102: Obtain the interval time from the film forming time to the preset measurement time and the sheet resistance measurement value at the preset measurement time of the film to be measured.

[0053] The embodiment does not limit the sheet resistance measurement value at the preset measurement time, and the sheet resistance measurement value can be obtained according to the selected sheet resistance measurement method, for example, the sheet resistance measurement value at the preset measurement time detected by the four-probe sheet resistance tester.

[0054] The embodiment does not limit the specific time of the preset measurement time, which can be any time after film forming.

[0055] S103: Determine the theoretical initial sheet resistance value of the film to be measured according to the interval time from the film forming time to the preset measurement time, the sheet resistance measurement value at the preset measurement time, and the theoretical relationship.

[0056] By substituting the interval time from the film forming time to the preset measurement time and the sheet resistance measurement value at the preset measurement time into the theoretical relationship of the initial sheet resistance of the film, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time, the initial sheet resistance of the film forming can be obtained.

[0057] Based on the above embodiment, the theoretical relationship of the initial sheet resistance of the film, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time is established. Based on the theoretical relationship, the initial sheet resistance can be obtained by obtaining the sheet resistance measurement value after film forming and the corresponding interval time from the film forming time to the measurement time. Therefore, the influence of the measurement time on the sheet resistance measurement result of the film can be reduced, so that the process quality of the equipment can be better monitored.

[0058] The above film forming initial sheet resistance measurement process will be described in detail below with reference to specific examples. Figure 2 , Figure 2 A flowchart of a film forming initial sheet resistance measurement method provided by the embodiment of the present application is shown below. The process is as follows:

[0059] 1. Use the same process to make a thickness window near the process target thickness value, and deposit metal films of different thicknesses. Then, multiple sheet resistance tests are performed on these metal films with the same composition, density, lattice coefficient, etc. at different times.

[0060] 2, Based on the collected sheet resistance measurement value and the corresponding interval time from film formation time to measurement time, the empirical formula Rm = f(t, R0) = a x ln(t) + (b x R0 + c) x t + d x R0 + e is established, and then the empirical formula of the initial sheet resistance R0 of the thin film and the sheet resistance measurement value Rm and the interval time t from film formation time to measurement time is deduced:

[0061]

[0062] It should be noted that since the sheet resistance at t = 0 cannot be measured, the empirical formula Rm = f(t, R0) is obviously distorted at t = 0. In actual application, the measured sheet resistance corresponding to a short interval time (the interval time is greater than 10 minutes) after film formation is generally selected as R0, such as the sheet resistance at 30 minutes after film formation;

[0063] 3, Set the film formation time of the metal thin film as t1, the sheet resistance measurement time of the thin film as t2, and the sheet resistance measurement value as Rm. The formula Ro = g(t2-t1, Rm) is filled into the intelligent production system;

[0064] 4, During the sheet resistance measurement of the thin film, the intelligent production system calculates the interval time t by monitoring the film deposition time and the sheet resistance measurement time. After the measurement device (such as a four-probe sheet resistance tester) feeds back the direct sheet resistance measurement value Rm to the intelligent production system, the intelligent production system outputs R0 through the filled formula Ro = g(t2-t1, Rm). When the production monitoring system is not intelligent enough, and human resources are relatively sufficient, the initial sheet resistance R0 of the thin film can also be calculated by manual calculation (with the help of a calculator or an excel formula).

[0065] Please refer to Figure 3 , which is a TiN thin film with Ti content / N content = 1, thickness range of , deposited by PVD using the same process parameters in a semiconductor workshop with stable atmospheric environment. Multiple sheet resistance tests are performed at different times to obtain the measurement values and corresponding interval time data from film formation to measurement under different thickness conditions. Set the sheet resistance of the thin film at the interval time t = 1 hrs from film formation time to measurement time as R0, and the sheet resistance at the interval time t from film formation time to measurement time as Rm. The empirical formula obtained according to the above data is:

[0066]

[0067] Multiple pieces of TiN thin film with thickness in the range of The TiN film in the range is measured for the sheet resistance R1 (i.e., the measured value of the initial sheet resistance) at the interval time t = 1 hrs from the film forming time to the measurement time, and then the sheet resistance R2 of the film is measured at another interval time t, and then the theoretical value R0 of the initial sheet resistance is calculated = g(t, R2). In this embodiment, the error between the measured value of the initial sheet resistance and the theoretical value of the initial sheet resistance is |R0-R1| / R1<1%.

[0068] A film forming initial sheet resistance measurement system, device and computer readable storage medium provided in the embodiment of the application are introduced below, and the film forming initial sheet resistance measurement system, device and computer readable storage medium described below can be mutually corresponding to the film forming initial sheet resistance measurement method described above.

[0069] Please refer to Figure 4 , Figure 4 A structural block diagram of a film forming initial sheet resistance measurement system provided in the embodiment of the application, which can include:

[0070] The theoretical relationship establishing module 100 is configured to establish a theoretical relationship of the initial sheet resistance of the film, the interval time from the film forming time to the measurement time, and the sheet resistance measured value at the measurement time.

[0071] The data acquisition module 200 is configured to acquire the interval time from the film forming time to the preset measurement time and the sheet resistance measured value at the preset measurement time of the film to be measured.

[0072] The theoretical initial sheet resistance value calculation module 300 is configured to determine the theoretical initial sheet resistance value of the film to be measured according to the interval time from the film forming time to the preset measurement time, the sheet resistance measured value at the preset measurement time, and the theoretical relationship.

[0073] Based on the above embodiment, the theoretical relationship of the initial sheet resistance of the film, the interval time from the film forming time to the measurement time, and the sheet resistance measured value at the measurement time is established. Based on the theoretical relationship, the initial sheet resistance can be obtained by acquiring the sheet resistance measured value after film forming and the corresponding interval time from the film forming time to the measurement time. Therefore, the influence of the measurement time on the film sheet resistance measurement result can be reduced, so that the process quality of the device can be better monitored.

[0074] Based on the above embodiment, the theoretical relationship establishing module 100 can include:

[0075] The sample data acquisition unit is configured to acquire the sheet resistance measurement values of the film samples with different thicknesses at different measurement times after the film forming time, and the interval times from the film forming time to the measurement time corresponding to the sheet resistance measurement values, under the condition that the atmospheric environment parameters and other film characteristic parameters except the thickness are unchanged.

[0076] The theoretical relationship establishing unit is configured to establish a theoretical relationship of the initial sheet resistance, the interval time from the film forming time to the measurement time, and the sheet resistance measurement value at the measurement time of the thin film according to the sheet resistance measurement value at each measurement time and the interval time from the film forming time to the measurement time corresponding to the sheet resistance measurement value.

[0077] Based on the above embodiments, the sample data acquisition unit is specifically configured to:

[0078] Under the condition that the atmospheric environment parameters and other thin film characteristic parameters except for the thickness remain unchanged, the sheet resistance measurement values of the thin film samples with different thicknesses at different measurement times after the film forming time and the interval times from the film forming time to the measurement times corresponding to the sheet resistance measurement values are acquired, and the interval times are greater than 10 minutes.

[0079] Based on the above embodiments, the theoretical relationship in the theoretical relationship establishing unit can be:

[0080] Rm=f(t,R0)=a×ln(t)+(b×R0+c)×t+d×R0+e;

[0081] wherein R0 represents the initial sheet resistance, Rm represents the sheet resistance measurement value at the measurement time, t represents the interval time from the measurement time to the film forming time, a represents a first function related to the atmospheric environment parameters and the thin film characteristic parameters, b represents a second function related to the atmospheric environment parameters and the thin film characteristic parameters, c represents a third function related to the atmospheric environment parameters and the thin film characteristic parameters, d represents a fourth function related to the atmospheric environment parameters and the thin film characteristic parameters, and e represents a fifth function related to the atmospheric environment parameters and the thin film characteristic parameters.

[0082] Based on the above embodiments, the data acquisition module 200 is specifically configured to acquire the interval time from the film forming time to the preset measurement time of the thin film to be measured and the sheet resistance measurement value at the preset measurement time detected by the four-probe sheet resistance tester.

[0083] Based on the above embodiments, the present application further provides a thin film film forming initial sheet resistance measurement device, which comprises a memory and a processor, wherein the memory is configured to store a computer program, and the processor is configured to implement the steps of the thin film film forming initial sheet resistance measurement method described in the above embodiments when executing the computer program. Of course, the thin film film forming initial sheet resistance measurement device can also include various necessary network interfaces, power supplies and other components, etc.

[0084] The application further provides a computer readable storage medium, and the computer readable storage medium stores a computer program. The computer program is executed by a processor to implement the steps of the film forming initial sheet resistance measurement method described in the above embodiments. The storage medium can include a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various storage medium capable of storing program codes.

[0085] The principles and implementation manners of the application are described by using specific examples in the present application, and the embodiments are in a progressive relationship. Each embodiment mainly describes the difference from other embodiments, and the same or similar parts of each embodiment can be referred to each other. For the system disclosed in the embodiments, the corresponding method part can be referred to. The above embodiment description is only used to help understand the method of the application and its core idea. For ordinary skilled in the art, some improvements and modifications can be made to the application without departing from the principles of the application, and these improvements and modifications also fall within the protection scope of the claims of the application.

[0086] It should be further noted that the relative terms, such as first and second, in the present specification are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between the entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of another same element in the process, method, article or device including the element.

Claims

1. A method for measuring the initial sheet resistance of a thin film, characterized in that, include: Establish a theoretical relationship between the initial sheet resistance of the thin film, the interval between the film formation time and the measurement time, and the sheet resistance measurement value at the measurement time; Obtain the interval between the film formation time and the preset measurement time of the thin film to be tested, and the sheet resistance measurement value at the preset measurement time; The theoretical initial sheet resistance value of the film under test is determined based on the interval between the film formation time and the preset measurement time, the sheet resistance measurement value at the preset measurement time, and the theoretical formula.

2. The method for measuring the initial sheet resistance of thin film formation according to claim 1, characterized in that, The theoretical relationship between the initial sheet resistance of the thin film, the interval between the film formation time and the measurement time, and the sheet resistance measurement value at the measurement time includes: Under the condition that atmospheric environmental parameters and other thin film characteristic parameters except thickness remain unchanged, the sheet resistance measurement values ​​of thin film samples with different thicknesses at different measurement times after the film formation time, and the interval time from the film formation time to the measurement time corresponding to the sheet resistance measurement value; Based on the sheet resistance measurement value at each measurement time and the interval time from the film formation time to the measurement time corresponding to the sheet resistance measurement value, a theoretical relationship is established between the initial sheet resistance of the thin film, the interval time from the film formation time to the measurement time, and the sheet resistance measurement value at the measurement time.

3. The method for measuring the initial sheet resistance of thin film formation according to claim 2, characterized in that, Under the condition that the atmospheric environmental parameters and other thin film characteristic parameters except thickness remain unchanged, the sheet resistance measurement values ​​of thin film samples with different thicknesses at different measurement times after the film formation time, and the interval time from the film formation time to the measurement time corresponding to the sheet resistance measurement value, include: Under the condition that the atmospheric environmental parameters and other film characteristic parameters except the thickness remain unchanged, the sheet resistance measurement values ​​of film samples with different thicknesses at different measurement times after the film formation time, and the interval time from the film formation time to the measurement time corresponding to the sheet resistance measurement value; the interval time is greater than 10 minutes.

4. The method for measuring the initial sheet resistance of thin film formation according to claim 2, characterized in that, The theoretical relation is as follows: Rm= f(t,R0)=a×ln(t)+(b×R0+c) ×t+d×R0+e; Wherein, R0 represents the initial sheet resistance; Rm represents the sheet resistance measurement value at the measurement time; t represents the interval time from the measurement time to the film formation time; a represents a first function related to the atmospheric environment parameters and the film characteristic parameters; b represents a second function related to the atmospheric environment parameters and the film characteristic parameters; c represents a third function related to the atmospheric environment parameters and the film characteristic parameters; d represents a fourth function related to the atmospheric environment parameters and the film characteristic parameters; and e represents a fifth function related to the atmospheric environment parameters and the film characteristic parameters.

5. The method for measuring the initial sheet resistance of thin film formation according to claim 1, characterized in that, The step of obtaining the sheet resistance measurement value at the preset measurement time includes: Obtain the sheet resistance measurement value at the preset measurement time detected by the four-probe sheet resistance tester.

6. A system for measuring the initial sheet resistance of thin film formation, characterized in that, include: The theoretical relationship establishment module is used to establish the theoretical relationship between the initial sheet resistance of the thin film, the interval between the film formation time and the measurement time, and the sheet resistance measurement value at the measurement time. The data acquisition module is used to acquire the interval between the film formation time and the preset measurement time of the film to be tested, and the sheet resistance measurement value at the preset measurement time. The theoretical initial sheet resistance calculation module is used to determine the theoretical initial sheet resistance of the film under test based on the interval between the film formation time and the preset measurement time, the sheet resistance measurement value at the preset measurement time, and the theoretical relationship.

7. The thin film initial sheet resistance measurement system according to claim 6, characterized in that, The theoretical relation establishment module includes: The sample data acquisition unit is used to acquire, under the condition that atmospheric environmental parameters and other thin film characteristic parameters other than thickness remain unchanged, the sheet resistance measurement values ​​of thin film samples with different thicknesses at different measurement times after the film formation time, and the interval time from the film formation time to the measurement time corresponding to the sheet resistance measurement value. The theoretical relationship establishment unit is used to establish theoretical relationships between the initial sheet resistance of the thin film, the interval between the film formation time and the measurement time, based on the sheet resistance measurement value at each measurement time and the interval between the film formation time and the measurement time corresponding to the sheet resistance measurement value.

8. The thin film initial sheet resistance measurement system according to claim 7, characterized in that, The sample data acquisition unit is specifically used for: Under the condition that the atmospheric environmental parameters and other film characteristic parameters except the thickness remain unchanged, the sheet resistance measurement values ​​of film samples with different thicknesses at different measurement times after the film formation time, and the interval time from the film formation time to the measurement time corresponding to the sheet resistance measurement value; the interval time is greater than 10 minutes.

9. A device for measuring the initial sheet resistance of thin film formation, characterized in that, include: Memory, used to store computer programs; A processor, configured to execute the computer program to implement the steps of the method for measuring the initial sheet resistance of thin film as described in any one of claims 1 to 5.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program that, when executed by a processor, implements the steps of the method for measuring the initial sheet resistance of thin film as described in any one of claims 1 to 5.

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