Detection system and detection method of photoetching machine, and photoetching machine

Abstract

The invention relates to the field of semiconductor detection, and provides a detection system of a photoetching machine, a detection method of the detection system and the photoetching machine, and the detection method of the photoetching machine comprises the following steps: scanning the surface morphology of a wafer to obtain detection data of the surface of the wafer; generating a detection image based on the detection data; the detection system determines whether the detection image has defects or not; wherein the defect means that the difference value between the first height of the contour of the wafer and the expected height of the wafer at the corresponding position does not conform to a first preset range; and if the defect exists, the detection system sends defect information. According to the detection system of the photoetching machine and the detection method thereof provided by the embodiment of the invention, the detection precision of the wafer with the abnormal surface height, which causes the exposure defocus defect of the photoetching machine, can be improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor detection, and particularly to a detection system and method for a lithography machine, and a lithography machine. Background Art

[0002] A memory is a memory component used to store programs and various data information. The random access memory (RAM) generally used in a computer system can be divided into two types: dynamic random access memory (DRAM) and static random access memory (SRAM). The dynamic random access memory is a commonly used semiconductor storage device in a computer, which is composed of many repeated memory cells, and the memory cells are composed of semiconductor chips.

[0003] The semiconductor chip manufacturing process includes multiple steps such as wafer processing, oxidation, lithography, etching, thin film deposition, interconnection, testing, and packaging. Among them, lithography is operated by a lithography machine. The exposure principle of the lithography machine is to print the pattern on the photomask onto the wafer surface through a photochemical reaction. The alignment quality between the pattern on the photomask and the surface morphology of the wafer directly affects the quality of the wafer product.

[0004] However, the alignment accuracy between the pattern on the photomask of the current lithography machine and the surface morphology of the wafer is average, which will further lead to subsequent defocusing or overlay error, and further lead to an increase in the defect rate of the final wafer. Summary of the Invention

[0005] Embodiments of the present disclosure provide a detection system and method for a lithography machine, and a lithography machine, which are at least beneficial to improving the detection accuracy of a surface height abnormal wafer that causes defocusing defects in the exposure of the lithography machine.

[0006] According to some embodiments of the present disclosure, on the one hand, an embodiment of the present disclosure provides a detection method for a lithography machine, including: scanning the surface topography of a wafer to obtain detection data of the wafer surface; generating a detection image based on the detection data; determining by a detection system whether there are defects in the detection image; where the defect refers to that the difference between the first height of the contour of the wafer and the expected height of the wafer at the corresponding position does not meet a first preset range; if there are defects, the detection system sends defect information.

[0007] In some embodiments, the first preset range is 25 nm to 60 nm; before sending the defect information, it further includes: when detecting the defect, obtaining the position of the defect; determining by the detection system whether the number of defects is greater than a preset number; if the number of defects is greater than the preset number, the detection system sends the defect information.

[0008] In some embodiments, while obtaining the position of the defect, area data of the defect is obtained; based on the area data, the total area ratio of the defect is obtained; if the total area ratio of the defect is greater than a second preset range, the detection system sends the defect message.

[0009] In some embodiments, the preset quantity range is 50 to 300; the second preset range is 40% to 60%.

[0010] In some embodiments, the preset quantity range is 5 to 300.

[0011] In some embodiments, the first preset range is 20 nm to 60 nm.

[0012] In some embodiments, when scanning the surface topography of the wafer, the wafer is divided into N regions, and sub-detection data corresponding to each region is obtained respectively; based on the sub-detection data, sub-detection images of each region are generated; the detection system determines whether the defect exists in each sub-detection image.

[0013] In some embodiments, when performing the surface topography scanning of the wafer, the detection window of the scanning is larger than the size of the wafer.

[0014] According to some embodiments of the present disclosure, on the other hand, the present disclosure also provides a detection system for a lithography machine, which is used to execute the detection method of the lithography machine described in any one of the above embodiments, including: a scanning unit for executing a scanning process; a testing unit for obtaining the detection data based on the scanning process and generating a detection image based on the detection data; a detection unit for determining whether a defect exists in the detection image; if the defect exists, the detection system sends defect information.

[0015] According to some embodiments of the present disclosure, on the other hand, the present disclosure also provides a lithography machine, including the detection system of the lithography machine described in the above embodiments.

[0016] The technical solution provided by the embodiments of the present disclosure has at least the following advantages: The inspection method of the lithography machine provided by the embodiments of the present disclosure determines whether there are defects in the inspection image of the surface of the wafer, that is, compares whether the difference between the first height of the contour of the wafer and the preset height of the wafer at the corresponding position conforms to the first preset range, so as to determine whether there are defects in the contour of the wafer. Furthermore, according to the confirmed information, defect information is sent to the engineer, so that wafers with defects can be effectively picked out, avoiding problems in subsequent alignment processes and lithography processes for wafers with defects, thereby improving the detection accuracy of surface height abnormal wafers that cause defocus defects in lithography machine exposure. Secondly, taking the height of the contour of the wafer as the comparison standard, while narrowing the height defect threshold, it will not overly detect the defects of the wafer and cause a decrease in the yield rate. At the same time, it can minimize the impact on the machine utilization rate and the service life of the wafer stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplary illustrations do not constitute limitations on the embodiments. Unless otherwise stated, the figures in the drawings do not constitute a proportional limitation. In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the following will briefly introduce the drawings required to be used in the embodiments. Obviously, the following-described drawings are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0018] Figure 1 It is a flowchart of an inspection method of a lithography machine provided by an embodiment of the present disclosure; Figure 2 It is a flowchart of determining whether there are defects in the inspection image in the inspection method of a lithography machine provided by an embodiment of the present disclosure; Figure 3 It is the inspection image of the wafer; Figure 4 It is a comparison image of the wafer; Figure 5 It is Figure 4 The partial enlarged view at A in Figure 6 It is another flowchart of determining whether there are defects in the inspection image in the inspection method of a lithography machine provided by an embodiment of the present disclosure; Figure 7 It is yet another flowchart of determining whether there are defects in the inspection image in the inspection method of a lithography machine provided by an embodiment of the present disclosure; Figure 8 It is another comparison image of the wafer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0019] As can be seen from the background art, the current alignment accuracy of lithography machines is poor.

[0020] Analysis reveals that one of the reasons for the poor alignment accuracy of the current lithography machine is that the defect detection method adopted by the current lithography machine is the Focus Spot Monitor (FSM). Under the FSM detection mechanism of the lithography machine and in order to avoid the excessive cleanliness of the wafers on the machine platform affecting the machine utilization rate and the service life of the wafer stage, the defect conditions can only be set according to different types of lithography machines, and the grayscale images detected by the FSM are not exactly the same as the height differences between the actual exposure profile during the lithography process and the actual wafer surface. Some wafers that do not meet the defect conditions but are actually defective cannot be detected, thus leading to subsequent alignment errors.

[0021] In other words, one of the reasons for the poor alignment accuracy of the current lithography machine is that the lithography machine has poor defect detection ability and cannot identify the wafers with defects in a timely manner, thus causing problems in subsequent alignment.

[0022] The embodiments of the present disclosure provide a detection device and a detection method for a lithography machine, and a lithography machine. By detecting the height of the wafer profile to determine whether there are defects, the detection accuracy of the surface height abnormal wafers that cause the exposure defocus defects of the lithography machine can be improved.

[0023] The following will elaborate on the embodiments of the present disclosure in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that in the embodiments of the present disclosure, many technical details are presented for the reader to better understand the present disclosure. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can still be implemented.

[0024] Figure 1 It is a flowchart of a detection method for a lithography machine provided by an embodiment of the present disclosure.

[0025] Referring to Figure 1 , according to some embodiments of the present disclosure, on the one hand, the embodiments of the present disclosure provide a detection method for a lithography machine. The detection method includes: scanning the surface topography of the wafer to obtain detection data of the wafer surface. The detection method includes: generating a detection image based on the detection data. The detection method includes: the detection system determines whether there are defects in the detection image; wherein, a defect refers to that the difference between the first height of the wafer profile and the expected height of the wafer at the corresponding position does not conform to the first preset range; if there are defects, the detection system sends defect information.

[0026] The inspection method of the lithography machine provided by the embodiments of the present disclosure determines whether there are defects in the inspection image of the surface of the wafer, that is, compares whether the difference between the first height of the contour of the wafer and the preset height of the wafer at the corresponding position meets the first preset range, so as to determine whether there are defects in the contour of the wafer. Furthermore, according to the confirmed information, defect information is sent to the engineer, so that wafers with defects can be effectively picked out, avoiding problems in subsequent alignment processes and lithography processes for defective wafers, thereby improving the detection accuracy of surface height abnormal wafers that cause defocus defects in lithography machine exposure. Secondly, taking the height of the contour of the wafer as the comparison standard, while reducing the height defect threshold, it will not overly detect the defects of the wafer and cause a decrease in the yield rate. At the same time, the impact on the machine utilization rate and the service life of the wafer stage can be minimized.

[0027] The following will describe the above different disclosed embodiments in detail with reference to the relevant drawings.

[0028] Reference Figure 1 , the inspection method includes scanning the surface topography of the wafer; and generating an inspection image based on the inspection data.

[0029] In some embodiments, the wafer refers to the wafer that constitutes a semiconductor chip. Among them, the wafer can be a bare wafer or a wafer with a deposited film layer.

[0030] In some embodiments, the device for performing the scanning process includes: an exposure light source, a detection mask, a wafer stage, and a detection device. The wafer is placed on the wafer stage. The detection mask is located above the wafer, and the detection mask has a detection window for exposing the surface of the wafer. The exposure light source is used to perform scanning based on the detection mask, and the detection device is used to obtain detection data.

[0031] In some embodiments, the detection data can be the height distribution of the wafer surface, and the obtained inspection image is a flatness image of the wafer (flatness map, which can also be called a leveling map), and each flatness image can include the horizontal height (leveling) at each position on the corresponding wafer.

[0032] In some embodiments, a defect refers to an abnormal flatness of the wafer. An abnormal flatness means that the horizontal heights at each position on the wafer are inconsistent, or the difference in horizontal heights at different positions exceeds a preset height threshold (this preset height threshold can be set according to actual needs, and the embodiments of the present disclosure do not limit this), or a position where the horizontal height is lower than the lower limit threshold of the horizontal height and / or higher than the upper limit threshold of the horizontal height is called an abnormal horizontal height. In the following embodiments, an example is given where the abnormal flatness is that there is a position on the contour of the wafer where the horizontal height is higher than the upper limit threshold of the horizontal height.

[0033] In some embodiments, n scanning information is obtained by scanning n wafers through a leveling sensor, such as n leveling maps. In some embodiments, these n leveling maps can be directly superimposed to obtain a flatness-enhanced image, which can enhance irregular and unobvious defects scattered in each leveling map, making flatness anomalies more obvious and easier to detect. Specifically, the height levels at various positions in the flatness-enhanced image can be obtained, the positions where the height levels are higher than the upper height threshold can be determined, the coordinate information of the positions where the height levels are higher than the upper height threshold and their corresponding height levels can be recorded, and a wafer spot map is generated, which includes various wafer spots.

[0034] In some embodiments, when scanning the surface topography of a wafer, the detection window for scanning is larger than the size of the wafer. In this way, areas outside the wafer can also be scanned, and then in subsequent comparison processes, the outline of the wafer can be more clearly distinguished based on the height difference, thereby avoiding situations such as missed detection and false detection caused by unclear outlines of the wafer, and thus improving the accuracy of defect detection.

[0035] It should be noted that the difference between the size of the detection window for scanning and the size of the outer contour of the wafer can be set according to the actual situation, as long as the detection window can completely expose the contour of the wafer. The size refers to the diameter or the maximum length of the plane where the wafer is located; or the diameter or the maximum length of the plane of the detection window.

[0036] In some embodiments, the first preset range is 20nm to 60nm. For example, the first preset range can be 20nm to 30nm, 30nm to 40nm, 40nm to 50nm, or 50nm to 60nm. The first preset range can be 20nm, 23nm, 26nm, 31nm, 35nm, 39nm, 43nm, 47nm, 52nm, 55nm, 58nm, or 60nm. When the first preset range is within the above range, some contaminants (such as dust or residues) on the wafer surface can be identified, and the problem of increased cost caused by the decrease in the yield of the wafer due to over-inspection can also be avoided.

[0037] Figure 2 This is a flowchart for determining whether there are defects in the detection image in the detection method of a lithography machine provided by an embodiment of the present disclosure. Taking Figure 2 the first preset range shown as 25nm as an example.

[0038] With reference toFigure 1 and Figure 2 If the difference between the first height of the wafer contour in the detected image and the expected height of the wafer at the corresponding position is greater than 25 nm, a defect message is sent; otherwise, the subsequent lithography step is performed.

[0039] In one example, the height of a certain contour of the wafer is 38 nm, and the expected height of the wafer at this corresponding position is 5 nm. Then the difference between the two is 33 nm. Since this difference is greater than 25 nm, the detection system sends out a defect message, and the engineer needs to perform the next discrimination work.

[0040] In another example, the height of a certain contour of the wafer is 20 nm, and the expected height of the wafer at this corresponding position is 5 nm. Then the difference between the two is 15 nm. Since this difference is less than 25 nm, the detection system ends the work, and the lithography machine continues the subsequent lithography step.

[0041] Figure 3 is the detection image of the wafer; Figure 4 is a comparison image of the wafer; Figure 5 is Figure 4 the partial enlarged view of area A in

[0042] With reference to Figures 3 to 5 , first, n wafers are scanned by a leveling sensor to obtain n scan information, so as to obtain a leveling map as shown in Figure 3 ; then, based on the leveling map, comparison images as shown in Figure 4 and Figure 5 are obtained; finally, defects with a difference greater than the first preset range are identified.

[0043] Figure 6 is another flowchart for determining whether there are defects in the detection image in the detection method of the lithography machine provided by an embodiment of the present disclosure.

[0044] In some embodiments, before sending the defect information, the following two steps are included: first, identifying the defects, and second, comparing the number of defects with a preset quantity. Specifically, the first preset range is 25 nm to 60 nm; with reference to Figure 6 , before sending the defect information, it also includes: when a defect is detected, obtaining the position of the defect; the detection system determines whether the number of defects is greater than the preset quantity; if the number of defects is greater than the preset quantity, the detection system sends the defect information.

[0045] In some embodiments, the preset quantity range is from 5 to 300. The preset quantity range can be from 5 to 50, from 50 to 100, from 100 to 150, from 150 to 200, from 200 to 250, or from 250 to 300. The preset quantity can be 5, 10, 25, 65, 115, 135, 146, 157, 183, 206, 224, 283, or 300. Defects can be quickly and accurately identified within the preset quantity range, and wafers with defects can be quickly identified, and over-inspection and mis-inspection can be avoided. Compared with only detecting the height of the contour, the embodiment of counting while detecting the height of the contour and comparing the quantity with the preset quantity can further improve the accuracy rate, eliminate the probability of errors in the detection device itself, and can further reduce the production cost.

[0046] Reference Figure 6 , if the difference between the first height of the wafer contour and the expected height of the wafer at the corresponding position in the detected image is greater than 40 nm, then the second step is performed; otherwise, the subsequent lithography step is performed; Second step: while obtaining the defect, obtain the position of the defect and count; Third step: in the detected image, count the position and quantity of the defects. If the number of defects is greater than 10, a defect message is sent; otherwise, the subsequent lithography step is performed.

[0047] Among them, the second step can be performed after detecting the defect, or can obtain the position of the defect and count while obtaining the defect.

[0048] In one example, the heights of a certain contour of the wafer are 38 nm, 28 nm, 68 nm, 83 nm, 69 nm, 100 nm, 69 nm, 10 nm, 110 nm, 56 nm, 57 nm, and 5 nm respectively, and the expected height of the wafer at this position is 5 nm. Then there are defects with a difference greater than 40 nm between the two, and the number is 8; the number of defects is less than 10, so the detection system ends its work, and the lithography machine continues the subsequent lithography step.

[0049] In another example, the heights of a certain contour of the wafer are 38 nm, 28 nm, 68 nm, 83 nm, 69 nm, 90 nm, 69 nm, 30 nm, 83 nm, 56 nm, 57 nm, and 36 nm respectively, and the expected height of the wafer at this position is 60 nm. Then there are no defects with a difference greater than 40 nm between the two, so the detection system ends its work, and the lithography machine continues the subsequent lithography step.

[0050] In another example, the heights of a certain contour of the wafer are 68nm, 78nm, 68nm, 83nm, 69nm, 100nm, 69nm, 60nm, 110nm, 56nm, 57nm, and 5nm respectively, and the expected height of the wafer at this location is 5nm. Then, there are defects with a difference greater than 40nm between the two, and the number is 11. Since the number of defects is greater than 10, the detection system sends out a defect message, and engineers need to perform the next discrimination work.

[0051] It should be noted that Figure 6 the threshold range in

[0052] Figure 7 is taken as an example with the first preset range being 40nm and the preset quantity being 10, but this does not constitute the threshold limitation of the embodiments of the present disclosure.

[0053] In some embodiments, before Figure 7 sending the defect information, the following three steps are included: First, identify the defects. Second, compare the number of defects with the preset quantity. Finally, compare the total area ratio of the defects with the second preset range. Specifically, the first preset range is 25nm - 60nm. Before sending the defect information, it also includes: when detecting the defects, obtaining the positions of the defects; the detection system determines whether the number of defects is greater than the preset quantity; when obtaining the positions of the defects, obtaining the area data of the defects; obtaining the total area ratio of the defects based on the area data; if the total area ratio of the defects is greater than the second preset range, the detection system sends a defect message.

[0054] In some embodiments, the preset quantity range is 50 - 300. The preset quantity range can be 50 - 100, 100 - 150, 150 - 200, 200 - 250, or 250 - 300. The preset quantity can be 65, 115, 135, 146, 157, 183, 206, 224, 283, or 300.

[0055] In some embodiments, the second preset range is 40% - 60%. The second preset range can be 40% - 45%, 45% - 50%, 50% - 55%, or 55% - 60%. The preset quantity can be 40%, 43%, 46%, 49%, 52%, 55%, 58%, or 60%. Defects can be quickly and accurately identified within the second preset range, wafers with defects can be quickly identified, and over - inspection and mis - inspection can be avoided. Compared with the previous two detection methods, Figure 7The illustrated embodiment can further improve the accuracy by identifying defective wafers step by step through three comparison conditions, eliminate the probability of errors in the detection device itself, and further reduce production costs.

[0056] Reference Figure 7 , if the difference between the first height of the wafer contour and the expected height of the wafer at the corresponding position in the detected image is greater than 60 nm, the subsequent second step is carried out; otherwise, the subsequent lithography is carried out. Second step: While acquiring the defect, acquire the position of the defect and count it. Third step: Statistically analyze the position and quantity of the defects in the detected image. If the number of defects is greater than 100, the subsequent fourth step is carried out; otherwise, the subsequent lithography is carried out. Fourth step: Obtain the proportion of the total area of the defects. Fifth step, if the proportion of the total area of the defects is greater than 50%, send the defect information; otherwise, carry out the subsequent lithography step.

[0057] Among them, the second step can be carried out after detecting the defect, or while acquiring the defect, acquire the position of the defect and count it; the fourth step can be carried out after detecting the defect, or while acquiring the defect, acquire the position of the defect and calculate the area, and summarize it into the proportion of the total area.

[0058] Figure 8 is another comparison image of the wafer.

[0059] In some embodiments, reference Figure 8 , the calculation method of the proportion of the total area of the defects refers to defining a partial area adjacent to the wafer contour as the contour area 101, comparing the heights of this partial area, and acquiring the defects, the positions of the defects, and the total area of the defects.

[0060] It should be noted that Figure 8 the radial length L of the contour area shown refers to the difference between the diameter of the wafer and the difference between the inner circle of the contour area 101 and the center of the circle. The specific range of L can be set according to the actual situation, and the embodiments of the present disclosure do not limit it. Figure 8 The filled area in

[0061] In one example, if there are no defects in the contour area of the wafer, the detection system ends its operation and the lithography machine continues with the subsequent lithography steps. In another example, if there are defects in the contour area of the wafer and the number of defects is 50, the detection system ends its operation and the lithography machine continues with the subsequent lithography steps. In yet another example, if there are defects in the contour area of the wafer, the number of defects is 120, and the total area ratio of the defects is 40%, the detection system ends its operation and the lithography machine continues with the subsequent lithography steps. In still another example, if there are defects in the contour area of the wafer, the number of defects is 120, and the total area ratio of the defects is 60%, the detection system sends out a defect message and an engineer is required to perform the next discrimination work.

[0062] It should be noted that Figure 8 the threshold range in [reference] takes the first preset range as 60 nm, the preset quantity as 100, and the second preset range as 50% as an example, but this does not constitute the threshold limitation of the embodiments of the present disclosure.

[0063] In some embodiments, when scanning the surface topography of the wafer, the wafer is divided into N regions, and sub-detection data corresponding to each region is obtained respectively; sub-detection images of each region are generated based on the sub-detection data; the detection system determines whether there are defects in each sub-detection image. In this way, detection can be carried out in segments and regions, which can improve the accuracy of defect detection.

[0064] The detection method of the lithography machine provided by the embodiments of the present disclosure determines whether there are defects in the detection image of the surface of the wafer, that is, compares whether the difference between the first height of the contour of the wafer and the preset height of the wafer at the corresponding position conforms to the first preset range, so as to determine whether there are defects in the contour of the wafer. Furthermore, according to the confirmed information, defect information is sent to the engineer, so that wafers with defects can be effectively picked out, avoiding problems in subsequent alignment processes and lithography processes for wafers with defects, thereby improving the detection accuracy of wafers with abnormal surface heights that cause defocusing defects in lithography machine exposure. Secondly, taking the height of the contour of the wafer as the comparison standard, while narrowing the height defect threshold, it will not overly detect the defects of the wafer and cause a decrease in yield, and at the same time, it can minimize the impact on the machine utilization rate and the service life of the wafer stage.

[0065] According to some embodiments of the present disclosure, on the other hand, the embodiments of the present disclosure further provide a detection system for a lithography machine, which is used to execute the detection method in any one of the above embodiments, including: a scanning unit for executing a scanning process; a testing unit for obtaining detection data based on the scanning process and generating a detection image based on the detection data; a detection unit for determining whether there are defects in the detection image; if there are defects, the detection system sends defect information.

[0066] In some embodiments, the detection unit is further configured to obtain the location and quantity of the defects, and the detection unit is further configured to determine whether the quantity of the defects is greater than a preset quantity; if the quantity of the defects is greater than the preset quantity, the detection system sends defect information.

[0067] In some embodiments, the detection unit is further configured to obtain the location, quantity, and total area ratio of the defects, and the detection unit is further configured to determine whether the quantity of the defects is greater than a preset quantity and obtain the total area ratio of the defects based on area data; if the total area ratio of the defects is greater than a second preset range, the detection system sends a defect message.

[0068] Correspondingly, according to some embodiments of the present disclosure, on the other hand, the present disclosure also provides a lithography machine including the detection system as described in the above embodiments.

[0069] Correspondingly, according to some embodiments of the present disclosure, on yet another aspect, the present disclosure also provides a terminal device including a processor and a storage device, the storage device being configured to store one or more programs; when the one or more programs are executed by the processor, the processor implements the detection method of the lithography machine as described above.

[0070] The processor may be a central processing unit (CPU), or may also be other general-purpose processors, digital signal processors (DSPs), application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc. The so-called processor is the control center of the test device, connecting various parts of the entire test device through various interfaces and lines.

[0071] The storage device can be used to store computer programs and / or modules. By running or executing the computer programs and / or modules stored in the storage device, and by invoking the data stored in the storage device, the processor can implement various functions of the terminal device. The storage device mainly includes a program storage area and a data storage area. Among them, the program storage area can store the operating system, application programs required for at least one function, etc.; the data storage area can store the data created according to the use of the terminal device, etc. In addition, the storage device can include high-speed random access memory, and can also include non-volatile memory, such as a hard disk, memory, plug-in hard disk, smart media card (SMC), secure digital (SD) card, flash card, at least one magnetic disk storage device, flash memory device, or other volatile solid-state storage devices.

[0072] Among them, if the modules / units integrated in the detection system of the lithography machine are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on such an understanding, to implement all or part of the processes in the above-mentioned embodiment methods of the present disclosure, it can also be completed by instructing relevant hardware through a computer program. The computer program can be stored in at least one computer-readable storage medium. When the computer program is executed by a processor, the steps of the above-mentioned various method embodiments can be implemented. Among them, the computer program includes computer program code, and the computer program code can be in the form of source code, object code, executable file, or some intermediate form, etc. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording medium, USB flash drive, mobile hard disk, magnetic disk, optical disc, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signal, telecommunication signal, and software distribution medium, etc.

[0073] It should be noted that the above-described embodiments of the devices and apparatuses are only illustrative. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place, or may be distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of the embodiments of the present disclosure.

[0074] Those of ordinary skill in the art can understand that the above embodiments are specific examples for implementing the present disclosure. In actual applications, various changes can be made in form and details without departing from the spirit and scope of the present disclosure. Any person skilled in the art can make their respective changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the scope defined by the claims.

Claims

1. A method for detecting a lithography machine, characterized in that: include: Scanning the surface morphology of the wafer to obtain detection data of the wafer surface; generating a detection image based on the detection data; The detection system determines whether there is a defect in the detection image; wherein the defect refers to that the difference between the first height of the outline of the wafer and the expected height of the wafer at the corresponding position does not meet the first preset range; If the defect exists, the detection system sends defect information.

2. The detection method of the lithography machine according to claim 1, characterized in that: The first preset range is 25nm~60nm; before sending the defect information, the method further includes: When the defect is detected, obtaining the position of the defect; The detection system determines whether the number of the defects is greater than a preset number; if the number of the defects is greater than the preset number, the detection system sends the defect information.

3. The detection method of the lithography machine according to claim 2, characterized in that: While obtaining the position of the defect, the area data of the defect is obtained; based on the area data, the total area ratio of the defects is obtained; if the total area ratio of the defects is greater than a second preset range, the detection system sends the defect message.

4. The detection method of the lithography machine according to claim 3, characterized in that: The preset number range is 50 to 300; the second preset range is 40% to 60%.

5. The detection method of the lithography machine according to claim 2, characterized in that: The preset quantity ranges from 5 to 300.

6. The detection method of the lithography machine according to claim 1, characterized in that: The first preset range is 20nm~60nm.

7. The detection method of a lithography machine according to claim 1, characterized in that: When scanning the surface morphology of the wafer, the wafer is divided into N areas, and sub-detection data corresponding to each area is obtained respectively; sub-detection images of each area are generated based on the sub-detection data; and the detection system determines whether the defect exists in each sub-detection image.

8. The detection method of a lithography machine according to claim 1, characterized in that: When performing the wafer surface topography scanning, the scanning detection window is larger than the size of the wafer.

9. A detection system for a lithography machine, used to execute the detection method for a lithography machine according to any one of claims 1 to 8, characterized in that: include: A scanning unit, for performing a scanning process; A testing unit, configured to obtain the detection data based on a scanning process and generate a detection image based on the detection data; A detection unit, used to determine whether there is a defect in the detection image; If the defect exists, the detection system sends defect information.

10. A photolithography machine, characterized in that: A detection system comprising a lithography machine as described in claim 9.

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