Detection system and detection method of photolithography machine, and photolithography machine

Abstract

The present disclosure relates to the field of semiconductor detection, and provides a detection system and detection method for a lithography machine, and a lithography machine. The detection method for the lithography machine includes: scanning the surface morphology of a wafer to obtain detection data of the wafer surface; generating a detection image based on the detection data; the detection system determines whether there is a defect in the detection image; wherein the defect refers to the difference between the first height of the outline of the wafer and the expected height of the wafer at the corresponding position not meeting a first preset range; if the defect exists, the detection system sends defect information. The detection system and detection method for the lithography machine provided by the embodiments of the present disclosure can improve the detection accuracy of wafers with abnormal surface heights that cause defocus defects in the exposure of the lithography machine.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor detection, and in particular to a detection system and a detection method for a lithography machine, and a lithography machine. Background Art

[0002] Memory is a component used to store programs and various data. Random Access Memory (RAM) commonly used in computer systems can be divided into two types: Dynamic Random Access Memory (DRAM) and Static Random Access Memory (SRAM). DRAM is a commonly used semiconductor memory device in computers, consisting of many repeated memory cells, which are constructed from semiconductor chips.

[0003] The semiconductor chip manufacturing process includes multiple steps, including wafer processing, oxidation, photolithography, etching, thin film deposition, interconnection, testing, and packaging. Photolithography is performed by a lithography machine, which uses a photochemical reaction to transfer the pattern on the photomask to the wafer surface. The alignment between the pattern on the photomask and the wafer surface directly affects the quality of the wafer product.

[0004] However, the alignment accuracy between the pattern on the mask and the surface morphology of the wafer in current lithography machines is generally poor, which can lead to subsequent defocusing or overlay errors, and thus increase the defective rate of the final wafer. Summary of the Invention

[0005] The embodiments of the present disclosure provide a detection system and a detection method for a lithography machine, and a lithography machine, which are at least beneficial for improving the detection accuracy of wafers with abnormal surface heights that cause exposure defocus defects in the lithography machine.

[0006] According to some embodiments of the present disclosure, on the one hand, an inspection method for a lithography machine is provided, comprising: scanning the surface morphology of a wafer to obtain inspection data of the wafer surface; generating an inspection image based on the inspection data; a detection system determining whether there is a defect in the inspection image; wherein the defect refers to the difference between a first height of the outline of the wafer and an expected height of the wafer at a corresponding position not meeting a first preset range; if the defect exists, the detection system sends defect information.

[0007] In some embodiments, the first preset range is 25nm~60nm; before sending the defect information, it also includes: obtaining the position of the defect while detecting the defect; the detection system determines whether the number of the defects is greater than the preset number; if the number of the defects is greater than the preset number, the detection system sends the defect information.

[0008] In some embodiments, while obtaining the position of the defect, the area data of the defect is obtained; based on the area data, the total area ratio of the defects is obtained; if the total area ratio of the defects is greater than a second preset range, the detection system sends the defect message.

[0009] In some embodiments, the preset number range is 50 to 300; the second preset range is 40% to 60%.

[0010] In some embodiments, the preset number ranges from 5 to 300.

[0011] In some embodiments, the first preset range is 20 nm to 60 nm.

[0012] In some embodiments, when scanning the surface morphology of the wafer, the wafer is divided into N areas, and sub-detection data corresponding to each area is obtained respectively; sub-detection images of each area are generated based on the sub-detection data; and the detection system determines whether the defect exists in each sub-detection image.

[0013] In some embodiments, when performing the wafer surface topography scan, the detection window of the scan is larger than the size of the wafer.

[0014] According to some embodiments of the present disclosure, on the other hand, embodiments of the present disclosure further provide a detection system for a lithography machine, which is used to execute the detection method for a lithography machine described in any one of the above embodiments, including: a scanning unit, used to execute a scanning process; a testing unit, used to obtain the detection data based on the scanning process and generate a detection image based on the detection data; a detection unit, used to determine whether there is a defect in the detection image; if the defect exists, the detection system sends defect information.

[0015] According to some embodiments of the present disclosure, another aspect of the present disclosure further provides a lithography machine, comprising a detection system for the lithography machine as described in the above embodiments.

[0016] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0017] The detection method of the lithography machine provided in the embodiment of the present disclosure detects whether there are defects in the detection image of the surface of the wafer, that is, compares whether the difference between the first height of the wafer contour and the preset height of the wafer at the corresponding position meets the first preset range to determine whether the contour of the wafer has defects, and then sends the defect information to the engineer based on the confirmed confirmation information, so that the defective wafers can be effectively picked out, avoiding problems with the defective wafers in the subsequent alignment process and lithography process, thereby improving the detection accuracy of wafers with abnormal surface height that cause defocus defects in the lithography machine exposure. Secondly, the height of the wafer contour is used as the comparison standard, so that while reducing the height defect threshold, the defects of the wafer will not be excessively detected to cause a decrease in yield, and the impact on the machine utilization rate and the service life of the wafer table can be minimized. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A flow chart of a detection method for a lithography machine provided in one embodiment of the present disclosure;

[0020] Figure 2 A flowchart for determining whether a detection image has defects in a detection method for a lithography machine provided in an embodiment of the present disclosure;

[0021] Figure 3 is the inspection image of the wafer;

[0022] Figure 4 It is a comparison image of the wafer;

[0023] Figure 5 for Figure 4 A partial enlarged view of point A in the middle;

[0024] Figure 6 Another flowchart for determining whether a detection image has defects in a detection method of a lithography machine provided in an embodiment of the present disclosure;

[0025] Figure 7 Another flowchart of determining whether a detection image has defects in the detection method of a lithography machine provided in an embodiment of the present disclosure;

[0026] Figure 8 This is another comparison image of the wafer. DETAILED DESCRIPTION

[0027] As can be seen from the background art, the alignment accuracy of current photolithography machines is poor.

[0028] Analysis has revealed that one of the reasons for the poor alignment accuracy of current lithography machines is that they use Focus Spot Monitor (FSM) technology for defect detection. To prevent excessively clean wafers on the machine, which could affect machine utilization and wafer table life, the FSM detection mechanism requires only defined defect conditions based on the machine type. Furthermore, the height difference between the grayscale image detected by the FSM and the actual exposure profile during the lithography process is not identical to the actual wafer surface. Consequently, some wafers that do not meet the defect conditions but are actually defective cannot be detected, leading to subsequent alignment errors.

[0029] In other words, one of the reasons why the alignment accuracy of current lithography machines is poor is that the lithography machines have poor defect detection capabilities and cannot identify defective wafers in a timely manner, which leads to problems in subsequent alignment.

[0030] The embodiments of the present disclosure provide a detection device and a detection method for a lithography machine, and a lithography machine. By detecting the height of the wafer profile to determine whether there is a defect, the detection accuracy of wafers with abnormal surface height that cause defocus defects in the lithography machine exposure can be improved.

[0031] The following describes various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in the various embodiments of the present disclosure to facilitate a better understanding of the present disclosure. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can still be implemented.

[0032] Figure 1 A flowchart of a method for detecting a lithography machine provided in one embodiment of the present disclosure.

[0033] refer to Figure 1 According to some embodiments of the present disclosure, on the one hand, an embodiment of the present disclosure provides a detection method for a lithography machine. The detection method includes: scanning the surface morphology of a wafer to obtain detection data of the wafer surface. The detection method includes: generating a detection image based on the detection data. The detection method includes: a detection system determines whether there is a defect in the detection image; wherein the defect refers to the difference between the first height of the outline of the wafer and the expected height of the wafer at the corresponding position not meeting the first preset range; if a defect exists, the detection system sends defect information.

[0034] The detection method of the lithography machine provided in the embodiment of the present disclosure detects whether there are defects in the detection image of the surface of the wafer, that is, compares whether the difference between the first height of the wafer contour and the preset height of the wafer at the corresponding position meets the first preset range to determine whether the contour of the wafer has defects, and then sends the defect information to the engineer based on the confirmed confirmation information, so that the defective wafers can be effectively picked out, avoiding problems with the defective wafers in the subsequent alignment process and lithography process, thereby improving the detection accuracy of wafers with abnormal surface height that cause defocus defects in the lithography machine exposure. Secondly, the height of the wafer contour is used as the comparison standard, so that while reducing the height defect threshold, the defects of the wafer will not be excessively detected to cause a decrease in yield, and the impact on the machine utilization rate and the service life of the wafer table can be minimized.

[0035] The above different disclosed embodiments will be described in detail below with reference to the relevant drawings.

[0036] refer to Figure 1 The detection method includes scanning the surface morphology of the wafer; and generating a detection image based on the detection data.

[0037] In some embodiments, a wafer refers to a wafer constituting a semiconductor chip, wherein the wafer may be a bare wafer or a wafer with a deposited film layer.

[0038] In some embodiments, an apparatus for performing a scanning process includes an exposure light source, an inspection reticle, a wafer stage, and an inspection device. A wafer is placed on the wafer stage. The inspection reticle is positioned above the wafer and has an inspection window for exposing the wafer surface. The exposure light source is used to perform scanning based on the inspection reticle, and the inspection device is used to acquire inspection data.

[0039] In some embodiments, the detection data may be the height distribution of the wafer surface, and the acquired detection image is a flatness map (also called a leveling map) of the wafer. Each flatness image may include the leveling at each corresponding position on the wafer.

[0040] In some embodiments, the defect refers to the flatness abnormality of the wafer. The flatness abnormality refers to the inconsistent horizontal heights at various positions on the wafer, or the difference in horizontal heights at different positions exceeds a preset height threshold (the preset height threshold can be set according to actual needs, and the embodiments of the present disclosure are not limited to this), or the position where the horizontal height is lower than the lower limit threshold and / or the horizontal height is higher than the upper limit threshold is called a horizontal height abnormality. In the following embodiments, the flatness abnormality is taken as an example of a position on the outline of the wafer where the horizontal height is higher than the upper limit threshold.

[0041] In some embodiments, a leveling sensor is used to scan n wafers to obtain n pieces of scanning information, such as n leveling maps. In some embodiments, these n leveling maps can be directly superimposed to obtain a flatness-enhanced image. This flatness-enhanced image can enhance irregular and inconspicuous defects scattered across the leveling maps, making flatness anomalies more obvious and easier to detect. Specifically, the level of each location in the flatness-enhanced image can be obtained, and the locations where the level exceeds an upper threshold of the level are determined. The coordinate information and corresponding level of the locations where the level exceeds the upper threshold of the level are recorded to generate a wafer spot map, which includes each wafer spot.

[0042] In some embodiments, when scanning the wafer surface topography, the scanning detection window is larger than the wafer size. This allows areas outside the wafer to be scanned, and in the subsequent comparison process, the wafer outline can be more clearly distinguished based on the height difference, thereby avoiding missed detections and false detections caused by unclear wafer outlines, thereby improving the accuracy of defect detection.

[0043] It should be noted that the difference between the scanning inspection window size and the wafer's outer contour can be set based on actual conditions, as long as the inspection window can fully expose the wafer's contour. Size refers to the diameter or maximum length of the wafer's plane; or the diameter or maximum length of the inspection window's plane.

[0044] In some embodiments, the first preset range is 20nm-60nm. For example, the first preset range can be 20nm-30nm, 30nm-40nm, 40nm-50nm, or 50nm-60nm. The first preset range can be 20nm, 23nm, 26nm, 31nm, 35nm, 39nm, 43nm, 47nm, 52nm, 55nm, 58nm, or 60nm. Within the above range, the first preset range can identify some contamination (such as dust or residue) on the wafer surface, and can also avoid the problem of reduced wafer yield and increased costs caused by over-inspection.

[0045] Figure 2 A flow chart for determining whether a detection image has defects in a detection method of a lithography machine provided in an embodiment of the present disclosure. Figure 2 The first preset range shown is 25 nm as an example.

[0046] Combined with reference Figure 1 and Figure 2 If the difference between the first height of the wafer outline in the detection image and the expected height of the wafer at the corresponding position is greater than 25nm, a defect message is sent, otherwise, the subsequent lithography steps are performed.

[0047] In one example, the height of a certain contour of the wafer is 38nm, and the expected height of the wafer at this location is 5nm. The difference between the two is 33nm. If this difference is greater than 25nm, the detection system will send a defect message and engineers will need to perform the next step of identification.

[0048] In another example, the height of a certain contour of the wafer is 20nm, and the expected height of the wafer at this location is 5nm. The difference between the two is 15nm. If this difference is less than 25nm, the detection system will stop working and the lithography machine will continue with the subsequent lithography steps.

[0049] Figure 3 is the inspection image of the wafer; Figure 4 It is a comparison image of the wafer; Figure 5 for Figure 4 A partial enlarged view of point A in the middle.

[0050] Combined with reference Figures 3 to 5 First, the leveling sensor is used to scan n wafers to obtain n scanning information, thereby obtaining Figure 3 The leveling map shown in the figure is then obtained based on the leveling map. Figure 4 as well as Figure 5 The comparison image shown; finally, defects with difference values ​​greater than the first preset range are identified.

[0051] Figure 6 Another flowchart for determining whether a detection image has defects in a detection method of a lithography machine provided in an embodiment of the present disclosure.

[0052] In some embodiments, before sending defect information, the following two steps are included: first, identifying defects, and second, comparing the number of defects with a preset number. Specifically, the first preset range is 25nm~60nm; Figure 6 Before sending the defect information, it also includes: obtaining the location of the defect when the defect is detected; the detection system determines whether the number of defects is greater than a preset number; if the number of defects is greater than the preset number, the detection system sends the defect information.

[0053] In some embodiments, the preset number ranges from 5 to 300. The preset number range can be 5 to 50, 50 to 100, 100 to 150, 150 to 200, 200 to 250, or 250 to 300. The preset number can be 5, 10, 25, 65, 115, 135, 146, 157, 183, 206, 224, 283, or 300. Within the preset number range, defects can be quickly and accurately identified, and defective wafers can be quickly identified, and over-inspection and false detection can be avoided. Compared with only detecting the height of the contour, the embodiment of detecting the height of the contour while counting and comparing the number with the preset number can further improve the accuracy, eliminate the probability of error in the detection device itself, and further reduce production costs.

[0054] refer to Figure 6 If the difference between the first height of the wafer outline and the expected height of the wafer at the corresponding position in the detection image is greater than 40nm, the second step is performed, otherwise, the subsequent photolithography step is performed; the second step: while obtaining the defects, the position of the defects is obtained and counted; the third step: the position and number of defects in the detection image are counted, if the number of defects is greater than 10, a defect message is sent, otherwise, the subsequent photolithography step is performed.

[0055] The second step may be performed after detecting the defects, or may be performed while obtaining the defects, obtaining the positions of the defects and counting them.

[0056] In an example, the heights of the contours of a certain part of the wafer are 38nm, 28nm, 68nm, 83nm, 69nm, 100nm, 69nm, 10nm, 110nm, 56nm, 57nm and 5nm, respectively, and the expected heights of the corresponding wafers are all 5nm. Then, there are defects in this wafer with a difference of more than 40nm, and the number is 8; if the number of defects is less than 10, the detection system stops working and the lithography machine continues with subsequent lithography steps.

[0057] In another example, the heights of the contours of a certain part of the wafer are 38nm, 28nm, 68nm, 83nm, 69nm, 90nm, 69nm, 30nm, 83nm, 56nm, 57nm and 36nm, and the expected heights of the wafers here are all 60nm. If there is no defect in the wafer with a difference of more than 40nm, the detection system ends its work and the lithography machine continues with the subsequent lithography steps.

[0058] In another example, the heights of the contours of a certain part of the wafer are 68nm, 78nm, 68nm, 83nm, 69nm, 100nm, 69nm, 60nm, 110nm, 56nm, 57nm and 5nm, respectively. The expected heights of the corresponding wafers are all 5nm. In this case, there are defects with a difference of more than 40nm between the two wafers, and the number is 11. If the number of defects is greater than 10, the detection system will send a defect message to the outside, and engineers are required to carry out the next step of identification.

[0059] It should be noted that Figure 6 The threshold range in the figure is based on the first preset range of 40 nm and the preset number of 10 as an example, but this does not constitute the threshold limitation of the embodiment of the present disclosure.

[0060] Figure 7 Another flowchart for determining whether a detection image has defects in a detection method of a lithography machine provided in an embodiment of the present disclosure.

[0061] In some embodiments, reference Figure 7 Before sending defect information, the following three steps are included: first, identifying defects; second, comparing the number of defects with a preset number; and finally, comparing the total area ratio of the defects with a second preset range. Specifically, the first preset range is 25nm to 60nm. Before sending defect information, the following steps are also included: upon detecting defects, obtaining the locations of the defects; the inspection system determines whether the number of defects exceeds the preset number; obtaining area data of the defects while obtaining the locations of the defects; and obtaining the total area ratio of the defects based on the area data. If the total area ratio of the defects exceeds the second preset range, the inspection system sends a defect message.

[0062] In some embodiments, the preset number ranges from 50 to 300. The preset number range can be 50 to 100, 100 to 150, 150 to 200, 200 to 250, or 250 to 300. The preset number can be 65, 115, 135, 146, 157, 183, 206, 224, 283, or 300.

[0063] In some embodiments, the second preset range is 40% to 60%. The second preset range can be 40% to 45%, 45% to 50%, 50% to 55%, or 55% to 60%. The preset number can be 40%, 43%, 46%, 49%, 52%, 55%, 58%, or 60%. Defects can be quickly and accurately identified within the second preset range, and wafers with defects can be quickly identified, and over-inspection and false detection can be avoided. Compared with the previous two detection methods, Figure 7The embodiment shown can further improve the accuracy by identifying defective wafers step by step through three comparison conditions, eliminate the probability of errors in the detection device itself, and further reduce production costs.

[0064] refer to Figure 7 If the difference between the first height of the wafer outline and the expected height of the wafer at the corresponding position in the detection image is greater than 60nm, then proceed to the subsequent second step, otherwise, proceed to the subsequent photolithography; the second step: while obtaining the defects, obtain the position of the defects and count them; the third step: count the position and number of defects in the detection image, if the number of defects is greater than 100, proceed to the subsequent fourth step, otherwise, proceed to the subsequent photolithography; the fourth step: obtain the total area ratio of defects; the fifth step, if the total area ratio of defects is greater than 50%, send defect information, otherwise, proceed to the subsequent photolithography step.

[0065] Among them, the second step can be performed after detecting the defects, or it can be performed while obtaining the defects, obtaining the locations of the defects and counting them; the fourth step can be performed after detecting the defects, or it can be performed while obtaining the defects, obtaining the locations of the defects and calculating the area, and summarizing them as a percentage of the total area.

[0066] Figure 8 This is another comparison image of the wafer.

[0067] In some embodiments, reference Figure 8 The calculation method of the total area ratio of defects is to define a partial area adjacent to the wafer contour as a contour area 101, and compare the height of this partial area to obtain the defects, the location of the defects and the total area of ​​the defects.

[0068] It should be noted that Figure 8 The length L of the middle contour area shown refers to the difference between the diameter of the wafer and the difference between the inner circle of the contour area 101 and the center of the circle. The specific range of L can be set according to actual conditions and is not limited to it in the embodiments of the present disclosure. Figure 8 The filled area in the image is the defect, and the unfilled area is not a defect.

[0069] In one example, if there are no defects in the outline area of ​​the wafer, the detection system ends its work and the lithography machine continues with the subsequent lithography steps. In another example, if there are defects in the outline area of ​​the wafer and the number of defects is 50, the detection system ends its work and the lithography machine continues with the subsequent lithography steps. In another example, if there are defects in the outline area of ​​the wafer and the number of defects is 120, and the total area of ​​defects accounts for 40%, the detection system ends its work and the lithography machine continues with the subsequent lithography steps. In another example, if there are defects in the outline area of ​​the wafer and the number of defects is 120, and the total area of ​​defects accounts for 60%, the detection system sends a defect message to the outside, and engineers are required to perform the next step of identification.

[0070] It should be noted that Figure 8 The threshold range in the figure is based on the first preset range of 60 nm, the preset number of 100 and the second preset range of 50% as an example, but this does not constitute the threshold limitation of the embodiment of the present disclosure.

[0071] In some embodiments, when scanning the wafer surface topography, the wafer is divided into N regions, and sub-inspection data corresponding to each region is obtained. A sub-inspection image of each region is generated based on the sub-inspection data. The inspection system then determines whether each sub-inspection image contains defects. This allows for segmented and partitioned inspection, which can improve the accuracy of defect detection.

[0072] The detection method of the lithography machine provided in the embodiment of the present disclosure detects whether there are defects in the detection image of the surface of the wafer, that is, compares whether the difference between the first height of the wafer contour and the preset height of the wafer at the corresponding position meets the first preset range to determine whether the contour of the wafer has defects, and then sends the defect information to the engineer based on the confirmed confirmation information, so that the defective wafers can be effectively picked out, avoiding problems with the defective wafers in the subsequent alignment process and lithography process, thereby improving the detection accuracy of wafers with abnormal surface height that cause defocus defects in the lithography machine exposure. Secondly, the height of the wafer contour is used as the comparison standard, so that while reducing the height defect threshold, the defects of the wafer will not be excessively detected to cause a decrease in yield, and the impact on the machine utilization rate and the service life of the wafer table can be minimized.

[0073] According to some embodiments of the present disclosure, on the other hand, the embodiments of the present disclosure further provide a detection system for a lithography machine, which is used to execute the detection method of any one of the above embodiments, including: a scanning unit, which is used to execute a scanning process; a testing unit, which is used to obtain detection data based on the scanning process and generate a detection image based on the detection data; a detection unit, which is used to determine whether there is a defect in the detection image; if there is a defect, the detection system sends defect information.

[0074] In some embodiments, the detection unit is further used to obtain the location and number of defects, and the detection unit is further used to determine whether the number of defects is greater than a preset number; if the number of defects is greater than the preset number, the detection system sends defect information.

[0075] In some embodiments, the detection unit is also used to obtain the location, number and total area ratio of defects, and the detection unit is also used to determine whether the number of defects is greater than a preset number and obtain the total area ratio of defects based on area data; if the total area ratio of defects is greater than a second preset range, the detection system sends a defect message.

[0076] Accordingly, according to some embodiments of the present disclosure, another aspect of the present disclosure further provides a lithography machine, comprising a detection system as described in the above embodiments.

[0077] Accordingly, according to some embodiments of the present disclosure, another aspect of the embodiments of the present disclosure further provides a terminal device, including a processor and a storage device, the storage device being used to store one or more programs; when the one or more programs are executed by the processor, the processor implements the above-mentioned detection method of the lithography machine.

[0078] The processor can be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or any conventional processor. The so-called processor is the control center of the test equipment, connecting various parts of the entire test equipment using various interfaces and lines.

[0079] The storage device can be used to store computer programs and / or modules. The processor implements various functions of the terminal device by running or executing the computer programs and / or modules stored in the storage device and accessing the data stored in the storage device. The storage device may mainly include a program storage area and a data storage area. The program storage area may store an operating system, at least one application required for a function, etc.; the data storage area may store data created based on the use of the terminal device, etc. In addition, the storage device may include high-speed random access memory and non-volatile memory, such as a hard disk, internal memory, a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, at least one disk storage device, a flash memory device, or other volatile solid-state storage device.

[0080] Among them, if the module / unit integrated in the detection system of the lithography machine is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the present disclosure implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in at least one computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor. Among them, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form, etc. Computer-readable media may include: any entity or device that can carry computer program code, recording medium, U disk, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), electrical carrier signal, telecommunication signal and software distribution medium, etc.

[0081] It should be noted that the embodiments of the devices and apparatuses described above are merely illustrative. The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of the modules may be selected based on actual needs to achieve the objectives of the embodiments of the present disclosure.

[0082] Those skilled in the art will appreciate that the above-described embodiments are specific examples for implementing the present disclosure, and that in actual applications, various changes in form and detail may be made thereto without departing from the spirit and scope of the present disclosure. Any person skilled in the art may make changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be subject to the scope defined in the claims.

Claims

1. A method for detecting a lithography machine, characterized in that: include: Scanning the surface topography of the wafer to obtain detection data of the wafer surface; The detection data is a first height of the profile of the wafer surface; Generate a detection image based on the detection data; the detection image is a flatness image of the wafer, and the flatness image includes the horizontal height at each position on the wafer; The inspection system determines whether there is a defect in the inspection image; wherein the defect refers to a difference between a first height of the outline of the wafer and an expected height of the wafer at a corresponding position not meeting a first preset range; The first preset range is 20nm~60nm; before sending the defect information, the method further includes: When the defect is detected, obtaining the position of the defect and the area data of the defect; The detection system determines whether the number of the defects is greater than a preset number; if the number of the defects is greater than the preset number, the detection system sends the defect information; Obtaining a total area ratio of the defects based on the area data; If the total area ratio of the defects is greater than a second preset range, the detection system sends the defect message.

2. The detection method of the lithography machine according to claim 1, characterized in that: The preset number range is 50 to 300; the second preset range is 40% to 60%.

3. The detection method of the lithography machine according to claim 1, characterized in that: The preset quantity ranges from 5 to 300.

4. The detection method of the lithography machine according to claim 1, characterized in that: The first preset range is 25nm~60nm.

5. The detection method of the lithography machine according to claim 1, characterized in that: When scanning the surface morphology of the wafer, the wafer is divided into N areas, and sub-detection data corresponding to each area is obtained respectively; sub-detection images of each area are generated based on the sub-detection data; and the detection system determines whether the defect exists in each sub-detection image.

6. The detection method of the lithography machine according to claim 1, characterized in that: When performing the wafer surface topography scan, the scanning detection window is larger than the size of the wafer.

7. A detection system for a lithography machine, configured to execute the detection method for a lithography machine according to any one of claims 1 to 6, characterized in that: include: A scanning unit, configured to perform a scanning process; a testing unit, configured to acquire the detection data based on a scanning process and generate a detection image based on the detection data; The detection data is the first height of the profile of the wafer surface; the detection image is a flatness image of the wafer, and the flatness of 25nm~60nm includes the horizontal heights at various positions on the corresponding wafer; The detection unit is used to determine whether there is a defect in the detection image; if the defect exists, the detection system sends defect information.

8. A photolithography machine, characterized in that: A detection system comprising the lithography machine as described in claim 7.

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