RF tuning system with tuning circuit having impedance for setting and adjusting electrode parameters in electrostatic chuck

Abstract

A substrate processing system for processing a substrate within a processing chamber includes a source terminal, a substrate support, and a tuning circuit. The substrate support supports the substrate and has a first electrode and a second electrode that receive power from a power source through the source terminal. A tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is assigned to tune a signal provided to the first electrode. The tuning circuit has at least one of a first impedance set and a second impedance set. The first impedance group is connected in series between the first electrode and the power supply and receives a first signal from the power supply through the source terminal. The second impedance group is connected between the output of the power supply and a reference terminal and receives the first signal from the power supply through the source terminal.

Description

This application is a divisional application of an invention patent application entering the Chinese national phase of a PCT application filed on July 30, 2019, with a PCT application number of PCT / US2019 / 044113, and the applicant is "Rum Research Corporation" (national application number is 201980063428.1, and the name of the invention is "RF tuning system having an impedance tuning circuit for setting and adjusting electrode parameters in an electrostatic chuck"). CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to U.S. Patent Application No. 16 / 052,877 filed on August 2, 2018. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0002] The present invention relates to an electric supporting device utilizing electrostatic attraction, and in particular to a tuning circuit and a radio frequency (RF) electrode for clamping the electric supporting device. Background Art

[0003] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors is neither explicitly nor implicitly admitted to be prior art against the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0004] The substrate handling system may be used for etching, deposition, and / or other processing of a substrate such as a semiconductor wafer. Exemplary processes that may be performed on a substrate include, but are not limited to, a plasma enhanced chemical vapor deposition (PECVD) process, a physical vapor deposition (PVD) process, an ion implantation process, and / or other etching, deposition, and cleaning processes. For example, during an etching process, a substrate may be placed on an electrostatic chuck (ESC) in a substrate handling system and a thin film on the substrate may be etched. Summary of the invention

[0005] A substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes: a source terminal; a substrate support and a first tuning circuit. The substrate support is configured to support the substrate. The substrate support includes an electrode. The electrode includes a first electrode and a second electrode. The first electrode and the second electrode receive power from a first power supply through the source terminal. A first tuning circuit is connected to at least one of the first electrode and the second electrode. The first tuning circuit is assigned to tune one or more signals provided to the first electrode. The first tuning circuit includes at least one of a first impedance group or a second impedance group. The first impedance group is connected in series between the first electrode and the first power supply. The first impedance group receives a first signal from the first power supply through the source terminal. The one or more signals include the first signal. The second impedance group is connected between the output of the first power supply and a reference terminal. The second impedance group receives the first signal from the first power supply through the source terminal.

[0006] In other features, the first tuning circuit includes the first impedance group and the second impedance group. In other features, the substrate processing system further includes a system controller configured to adjust the values ​​of the impedances in the first impedance group and the values ​​of the impedances in the second impedance group.

[0007] In other features, the first tuning circuit adjusts the voltage, current level, phase, power level and / or frequency of the one or more signals provided to the first electrode. In other features, the first tuning circuit includes the first impedance group and the second impedance group. The second impedance group is connected between the first impedance group and the reference terminal.

[0008] In other features, the first power source includes a matching network. The matching network is connected between the first power source and the source terminal. The first tuning circuit is connected between the source terminal and the first electrode.

[0009] In other features, the first tuning circuit is not included in a matching network. In other features, no matching network is connected between the first power source and the first tuning circuit.

[0010] In other features, the substrate processing system further includes a second tuning circuit. The first tuning circuit is configured to adjust a voltage, current level, phase, power level, or frequency of the first signal provided from the first power source to the first electrode. The second tuning circuit is configured to adjust a voltage, current level, phase, power level, or frequency of the first signal provided from the first power source to the second electrode. The one or more signals include the first signal.

[0011] In other features, the substrate processing system further includes a second power supply and a second tuning circuit. The first tuning circuit is configured to adjust a voltage, current level, phase, power level, or frequency of the first signal provided from the first power supply to the first electrode. The second tuning circuit is configured to adjust a voltage, current level, phase, power level, or frequency of a second signal provided from the second power supply to the second electrode. The one or more signals include the first signal and the second signal.

[0012] In other features, the electrodes of the substrate processing system are concentrically arranged.

[0013] In other features, the substrate processing system further includes a second tuning circuit and a third tuning circuit. The electrode includes a third electrode. The first tuning circuit is connected to the first electrode and is configured to modify the first signal before the first signal is received at the first electrode. The second tuning circuit is connected to the second electrode and is configured to modify the first signal or the second signal before the first signal or the second signal is received at the second electrode. The third tuning circuit is connected to the third electrode and is configured to modify the first signal or the third signal before the first signal or the third signal is received at the third electrode. In other features, the first electrode, the second electrode, and the third electrode are concentrically arranged.

[0014] In other features, the substrate support is an electrostatic chuck. The first electrode and the second electrode are clamping electrodes and are configured to receive a clamping voltage to clamp the substrate to the substrate support. The third electrode is a biasing electrode and is configured to receive a biasing voltage. The third signal is received by the third tuning circuit from the third power supply.

[0015] In other features, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second electrode and the third electrode are bias electrodes. The second signal is received by the second tuning circuit from a second power supply.

[0016] In other features, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second electrode is a clamping electrode. The electrode includes an electrode ring. The first tuning circuit includes the first impedance group, a third impedance group, and a fourth impedance group. The first impedance group includes a first inductor and a first capacitor connected between the first clamping electrode and the first power source. The third impedance group includes a second inductor and a second capacitor connected between the electrode ring and the first power source. The fourth impedance group includes a third inductor and a third capacitor connected between the second clamping electrode and the first power source.

[0017] In other features, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second electrode is a clamping electrode. The electrode includes an electrode ring. The first tuning circuit includes the second impedance group, a third impedance group, and a fourth impedance group. The second impedance group includes a first inductor and a first capacitor connected in parallel between a first electrode terminal and the reference terminal, wherein the first electrode terminal is connected between the first clamping electrode and the first power source. The third impedance group includes a second inductor and a second capacitor connected in parallel between a second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power source. The fourth impedance group includes a third inductor and a third capacitor connected in parallel between the third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamping electrode and the first power source.

[0018] In other features, the substrate support is an electrostatic chuck. The first electrode is a clamping electrode. The second electrode is a clamping electrode. The electrode includes an electrode ring. The first tuning circuit includes the first impedance group, the second impedance group, the third impedance group, the fourth impedance group, the fifth impedance group, and the sixth impedance group. The first impedance group includes a first inductor and a first capacitor connected between the first clamping electrode and the first power supply. The third impedance group includes a second inductor and a second capacitor connected between the electrode ring and the first power supply. The fourth impedance group includes a third inductor and a third capacitor connected between the second clamping electrode and the first power supply. The second impedance group includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and the reference terminal. The first electrode terminal is connected between the first clamping electrode and the first power supply. The fifth impedance group includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the first power supply. The sixth impedance group includes a sixth inductor and a sixth capacitor connected in parallel between the third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamping electrode and the first power source.

[0019] In other features, the substrate processing system further includes a second power source connected to the first terminal, the second terminal, and the third terminal.

[0020] In other features, the substrate processing system further includes a second tuning circuit. The substrate support is an electrostatic chuck. The first electrode is a first clamping electrode. The second electrode is a second clamping electrode. The electrode includes an electrode ring. The first tuning circuit includes the first impedance group, the third impedance group, and the fourth impedance group. The second tuning circuit includes the second impedance group, the fifth impedance group, and the sixth impedance group. The first impedance group includes a first inductor and a first capacitor connected between the first clamping electrode and the first power supply. The third impedance group includes a second inductor and a second capacitor connected between the electrode ring and the second power supply. The fourth impedance group includes a third inductor and a third capacitor connected between the second clamping electrode and the first power supply. The second impedance group includes a fourth inductor and a fourth capacitor connected in parallel between the first electrode terminal and the reference terminal. The first electrode terminal is connected between the first clamping electrode and the first power supply. The fifth impedance group includes a fifth inductor and a fifth capacitor connected in parallel between the second electrode terminal and the reference terminal. The second electrode terminal is connected between the electrode ring and the second power supply. The sixth impedance group includes a sixth inductor and a sixth capacitor connected in parallel between a third electrode terminal and the reference terminal. The third electrode terminal is connected between the second clamping electrode and the first power source.

[0021] In other features, no matching network is connected between the source terminal and the electrode. In other features, power from the first power source is split to provide portions of the power to the electrodes respectively. In other features, the first impedance group and the second impedance group include variable inductance values.

[0022] In other features, the substrate processing system further includes the processing chamber, the first power supply, and a controller configured to adjust a plurality of impedances of the first impedance group and the second impedance group.

[0023] In other features, a substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes: a substrate support, a first impedance, and a second impedance. The substrate support is configured to hold the substrate, wherein the substrate support includes an electrode. The electrodes include a first electrode, a second electrode, and a third electrode. The first impedance is connected between the first electrode and the third electrode. The second impedance is connected between the second electrode and the third electrode. The first impedance is connected (i) between the first electrode and the second impedance, and (ii) between a first power source and the second impedance. The second impedance is connected (i) between the second electrode and the first impedance, and (ii) between a second power source and the first impedance. The first impedance and the second impedance are assigned to tune (i) a first signal provided by the first power source to the first electrode, and (ii) a second signal provided by the second power source to the second electrode.

[0024] In other features, the first impedance is connected in series with the second impedance. In other features, the first impedance is connected between the first electrode and a third power source. The second impedance is connected between the second electrode and the third power source. In other features, the third power source is connected to the third electrode.

[0025] In other features, the substrate processing system further includes a third impedance and a fourth impedance. The third impedance is connected (i) between the first electrode and the third electrode, (ii) between the first electrode and the fourth impedance, and (iii) between the first power source and the fourth impedance. The fourth impedance is connected (i) between the second electrode and the third electrode, (ii) between the second electrode and the third impedance, and (iii) between the second power source and the third impedance. The third impedance and the fourth impedance are assigned to tune (i) the first signal provided by the first power source to the first electrode, and (ii) the second signal provided by the second power source to the second electrode.

[0026] In other features, the first impedance and the third impedance are connected in parallel between the first electrode and a third power source. The second impedance and the fourth impedance are connected in parallel between the second electrode and the third power source. In other features, the third power source is connected to the third electrode. In other features, the first impedance group and the second impedance group include variable inductance values.

[0027] In other features, the substrate processing system further comprises: the processing chamber; the first power supply; and a controller configured to adjust the impedance of the first impedance group and the second impedance group.

[0028] In other features, a method of operating a substrate processing system is provided. The method includes: selecting a process; determining a recipe including system operating parameters for the selected process; controlling an actuator to set the system operating parameters; and setting an impedance value of a first tuning circuit based on the selected process and the system operating parameters. The first tuning circuit is connected to a first electrode in a substrate support. The first tuning circuit is assigned to tune a signal provided to the first electrode. The first tuning circuit includes at least one of: a first impedance group connected in series between the first electrode and a first power supply, wherein the first impedance group receives a first signal from the first power supply, wherein the one or more signals include the first signal; or a second impedance group connected between an output of the first power supply and a reference terminal. The second impedance group receives the first signal from the first power supply. The method also includes: placing a substrate on the substrate support in a processing chamber; and performing a processing operation for the selected process includes providing power from the first power supply to electrodes in the substrate support. The electrodes include the first electrode and the second electrode. The first electrode and the second electrode receive power from the first power supply through a source terminal.

[0029] In other features, the method further comprises adjusting the impedance value of the first tuning circuit while performing the processing operation. In other features, the method further comprises while performing the processing operation: collecting sensor output data; determining one or more parameters based on the sensor output data; and adjusting the impedance value of the first tuning circuit based on the one or more parameters.

[0030] In other features, the method further comprises: determining a characteristic or property of the processing chamber; and setting the impedance value of the first tuning circuit based on the characteristic or property.

[0031] In other features, the method further comprises: determining a characteristic or property of the substrate support; and setting the impedance value of the first tuning circuit based on the characteristic or property.

[0032] In other features, the method further includes: adjusting the impedance of at least one of the first impedance group or the second impedance group to follow a corresponding trajectory based on a change in the characteristic. In other features, the method further includes calculating or determining the trajectory based on at least one of: the characteristic; the characteristic; one or more other characteristics of the substrate, the substrate support, or the processing chamber; and one or more other characteristics of the substrate, the substrate support, or the processing chamber.

[0033] In other features, the method further comprises: determining a characteristic or property of the substrate; and setting the impedance value of the first tuning circuit based on the characteristic or property.

[0034] In other features, the method further includes: supplying a clamping voltage to the first electrode via the first power source to clamp the substrate to the substrate support; supplying a bias voltage to the second electrode; and tuning the clamping voltage and the bias voltage via the first tuning circuit or the second tuning circuit. The substrate support is an electrostatic chuck. In other features, the first tuning circuit includes the first impedance and the second impedance.

[0035] In other features, the method further comprises: adjusting a value of an impedance of the first tuning circuit to tune the clamping voltage supplied to the first electrode; and adjusting a value of an impedance of the second tuning circuit to tune the bias voltage supplied to the second electrode. The substrate support is an electrostatic chuck. In other features, the method further comprises: adjusting a potential difference of the plasma between corresponding pairs of points above and across a surface of the substrate support by adjusting the value of the impedance of the first tuning circuit.

[0036] In other features, the method further includes: adjusting an impedance value in a bias RF matching network based on the impedance value of the first tuning circuit. The bias RF matching network is connected between the first power source and the first tuning circuit.

[0037] In other features, a substrate processing system for processing a substrate in a processing chamber is provided. The substrate processing system includes: a source terminal, a substrate support, a first tuning circuit and a second tuning circuit. The substrate support is configured to hold the substrate. The substrate support includes electrodes, wherein the electrodes include a first electrode and a second electrode. A first tuning circuit is connected to the first electrode and is assigned to tune the impedance of the first electrode. The first tuning circuit includes a first impedance group connected to the first electrode and ground. A second tuning circuit is connected to the second electrode and is assigned to tune the impedance of the second electrode. The second tuning circuit includes the second impedance group connected to the second electrode and the ground.

[0038] In other features, the first tuning circuit is connected in series between the first electrode and the ground. In other features, the first tuning circuit includes an inductor and a capacitor. In other features, the second tuning circuit is connected in series between the second electrode and the ground. In other features, the second tuning circuit includes an inductor and a capacitor. In other features, the first tuning circuit is connected between the first electrode and the second electrode. The first electrode and the second electrode are grounded.

[0039] In other features, the substrate processing system further includes: a third electrode connected to ground; and a third tuning circuit connected between the second electrode and the third electrode. In other features, the first tuning circuit includes a first inductor and a first capacitor. The second tuning circuit includes a second inductor and a second capacitor.

[0040] In other features, the first tuning circuit and the second tuning circuit include variable inductors. In other features, the substrate processing system further includes: the processing chamber; and a controller configured to adjust the impedance of the first impedance group and the second impedance group.

[0041] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0043] Figure 1 is a functional block diagram of an example of a substrate processing system including an ESC having electrodes and corresponding tuning circuits according to an embodiment of the present invention;

[0044] Figure 2 is a functional block diagram of an exemplary capacitive coupling circuit including a tuning circuit for a clamping electrode and a biasing electrode according to an embodiment of the present invention;

[0045] Figure 3 is a functional block diagram of an example of a capacitive coupling circuit including a tuning circuit for two clamping electrodes and a bias electrode according to an embodiment of the present invention;

[0046] Figure 4 is a functional block diagram of an example of a capacitive coupling circuit including a tuning circuit for a clamping electrode and two bias electrodes according to an embodiment of the present invention;

[0047] Figure 5 is a functional block diagram of an example of a capacitive coupling circuit including a tuning circuit for a clamping electrode and three bias electrodes according to an embodiment of the present invention;

[0048] Figure 6 is a functional block diagram of an example of a tuning circuit for a clamping electrode and a bias electrode according to an embodiment of the present invention;

[0049] Figure 7is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit being connected to a single RF power supply and comprising a series connected inductor and capacitor for two clamping electrodes and a bias electrode ring;

[0050] Figure 8 is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit connected to a single RF power supply and including parallel inductors and capacitors for two clamping electrodes and a bias electrode ring;

[0051] Fig. 9 is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit being connected to a dual RF power supply and including a series connected inductor and capacitor and a parallel connected inductor and capacitor for two clamping electrodes and a bias electrode ring;

[0052] Fig.10 is a functional block diagram of an example of two tuned circuits connected to respective RF power supplies and including series-connected inductors and capacitors or parallel-connected inductors and capacitors for two clamping electrodes and a bias electrode ring according to an embodiment of the present invention;

[0053] Fig.11 is a functional block diagram of an example of a tuning circuit according to an embodiment of the present invention, the tuning circuit comprising a capacitor and an inductor for a parallel connection of two clamping electrodes and a bias electrode ring;

[0054] Fig.12 A method of operating a substrate processing system according to an embodiment of the present invention is shown, which includes setting and adjusting the impedance value of a tuning circuit of an electrode of an electrostatic chuck; and

[0055] Fig.13 FIG. 4 is an example of a substrate support including an outer ring electrode and two inner electrodes according to an embodiment of the present invention.

[0056] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0057] In a capacitively coupled plasma (CCP) system, an RF voltage signal may be supplied to a showerhead and / or a substrate support (e.g., an electrostatic chuck or a stage) in a processing chamber to generate and maintain a plasma provided for substrate processing (e.g., a plasma provided during an etching or deposition process). For example, the substrate support may include a plurality of electrodes for receiving an RF voltage. The electrodes have respective geometric features and thus may have different sizes and shapes and may be disposed at different locations within the substrate support.

[0058] Examples listed herein include a tuning circuit for controlling the RF voltage supplied to an electrode of a substrate support. The tuning circuit includes a variable and / or fixed impedance that can be tuned for the substrate processing being performed. The RF voltage supplied to the electrode and the corresponding current can be controlled to change aspects of the generated plasma. During processing, a substrate is placed on a substrate support and one or more layers of the substrate (such as a thin film layer) can be, for example, etched or deposited. By customizing the RF voltage supplied to different electrodes, the parameters of one or more layers can be spatially changed and / or tuned across the wafer depending on the location of the electrodes. For example, the parameters of one or more layers can include uniformity values, stress values, refractive index, etching rate, deposition rate, thickness values, and / or other measured quantities of intrinsic characteristics.

[0059] The disclosed RF power is provided by one or more RF power supplies. In one embodiment, the RF power is provided by feeding a common node RF power from a single RF power supply. The RF power provided from the common node is then provided to a plurality of different electrodes of the substrate support through respective paths. The paths include tuning circuits and / or impedances that can change the corresponding RF voltage, current level, phase, and / or frequency content. The impedances may include impedances connected in series or in parallel. Other embodiments disclosed herein include multiple power supplies, multiple nodes, and various paths.

[0060] The RF voltage and current levels provided to the plurality of electrodes in the substrate support may also be varied by adjusting the size, shape, and pattern of the plurality of electrodes. For example, the amount of RF voltage and current provided to the plasma from the annular and / or circular electrodes, the substrate processing performed using the annular and / or circular electrodes, and / or the resulting substrate properties may be varied and / or tuned by changing the radius of the electrodes.

[0061] The substrate processing system may have a number of features, characteristics and / or parameters that provide degrees of freedom that may be set and / or adjusted to control aspects of the resulting film layer on the substrate during substrate processing. For example, RF power levels, chamber geometry, use of focus rings, showerhead hole patterns, showerhead shapes, electrode patterns, gas pressures, gas compositions, etc. may be set and / or controlled to provide a resulting substrate having a target film layer composition and profile.

[0062] The disclosed examples provide another degree of freedom for tuning one or more layers of the substrate. The degree of freedom is provided by setting and / or adjusting the impedance of the tuning circuit (e.g., selecting, changing, and / or controlling capacitance, inductance, reactance, resistance, layout, etc.). The profile refers to the above parameters of one or more layers.

[0063] For example, the radial profile of the substrate can be changed by changing the metal or dielectric annular element near the circumferential edge of the substrate. This may include adjusting parameters such as gas pressure, gas flow rate, gas composition, power of RF release, frequency of RF signal provided to the electrode of the substrate support, and / or other parameters. Changing these parameters at a specific position to provide target layer characteristics (such as a specific layer thickness or shape at the circumferential edge) can change other parameters at the same position and / or other positions and / or affect other features. Therefore, these parameters do not adjust certain features independently. For another example, the circumferential edge of the substrate can be changed by using a focusing ring outside the circumferential edge of the substrate. However, the use of a focusing ring can affect the gas flow rate at the center of the substrate, which can affect the processing and thus the results at the center of the substrate. Other exemplary layer features are specific groove depth or width, distance between grooves, distance between conductive elements, layer composition, etc.

[0064] The more parameters and degrees of freedom there are in setting and controlling the tuning of the profile of one or more layers of a substrate, the more likely it is that a specific feature can be provided without negatively affecting other features. In addition, as the number of parameters and degrees of freedom increase, the number, composition, and layout (or pattern) of features that can be formed increase. The examples disclosed herein increase the flexibility of substrate film layer design and the selectivity of location-specific design, and enable substrate processing systems to provide a diverse set of features.

[0065] Figure 1 A substrate processing system 100 is shown that includes an ESC 101. The configuration of the ESC 101 can be the same or similar to any ESC disclosed herein. Figure 1 A capacitively coupled plasma (CCP) system is shown, but the embodiments disclosed herein may be applied to transformer coupled plasma (TCP) systems, electron cyclotron resonance (ECR) plasma systems, inductively coupled plasma (ICP) systems, and / or other systems including substrate supports and plasma sources. The embodiments may be applied to PVD processes, PECVD processes, chemical enhanced plasma vapor deposition (CEPVD) processes, ion implantation processes, plasma etching processes, and / or other etching, deposition, and cleaning processes.

[0066] The ESC 101 may include a top plate 102 and a bottom plate 103. Although the ESC 101 is shown as having two plates, the ESC may include a single plate. The plates 102, 103 may be formed of ceramic and / or other materials. Figure 1-5 Each ESC in 7-11 is shown as having certain features and not having other features, but each ESC can be modified to include the features disclosed herein and Figure 1-5 and any features in 7-11.

[0067] Although ESC 101 is shown mounted to the bottom of a processing chamber and is not configured to rotate, ESC 101 and other ESCs disclosed herein may be mounted at the bottom or upper portion of a processing chamber and may be configured as a spin chuck to rotate during processing of a substrate. If mounted to the upper portion of a processing chamber, the ESC may have a similar configuration to other ESCs disclosed herein but flipped upside down and may include peripheral substrate support, clamping, and / or fastening hardware.

[0068] The substrate processing system 100 includes a processing chamber 104. The ESC 101 is enclosed within the processing chamber 104. The processing chamber 104 also surrounds other components, such as an upper electrode 105, and contains an RF plasma. During operation, a substrate 107 is placed on and electrostatically clamped to the top plate 102 of the ESC 101.

[0069] By way of example only, the upper electrode 105 may include a showerhead 109 that introduces and disperses the gas. The showerhead 109 may include a rod 111, one end of which is connected to the upper surface of the processing chamber 104. The showerhead 109 is generally cylindrical and extends radially outward from the opposite end of the rod 111 at a position separated from the upper surface of the processing chamber 104. The surface of the showerhead 109 facing the substrate includes a plurality of holes through which the processing gas or the purge gas flows. Alternatively, the upper electrode 105 may include a conductive plate and the gas may be guided in other ways. One or both of the plates 102, 103 may be used as the lower electrode.

[0070] One or both of the plates 102, 103 may include a temperature control element (TCE). For example, Figure 1 A top plate 102 is shown that includes TCE 110 and can be used as a heating plate. An intermediate layer 114 is disposed between the plates 102, 103. The intermediate layer 114 can bond the top plate 102 to the bottom plate 103. For example, the intermediate layer can be formed of an adhesive material suitable for bonding the top plate 102 to the bottom plate 103. The bottom plate 103 can include one or more gas channels 115 and / or one or more coolant channels 116 for flowing a backside gas to the back side of the substrate 107 and flowing a coolant through the bottom plate 103.

[0071] The RF generation system 120 generates an RF voltage and outputs the RF voltage to the upper electrode 105 and the lower electrode (such as one or more of the plates 102, 103). One of the upper electrode 105 and the ESC 101 can be DC grounded, AC grounded, or floating potential. For example only, the RF generation system 120 can be controlled by a system controller 121 and include one or more RF generators 122 (such as a capacitively coupled plasma RF power generator, a bias power generator, and / or other RF power generators) that can generate an RF voltage, and the generated RF voltage is fed to the upper electrode 105 and / or the ESC 101 through one or more matching and distribution networks 124. For example, a first RF generator 123, a second RF generator 125, a first RF matching network 127, and a second RF matching network 129 are shown. The first RF generator 123 and the first RF matching network 127 can provide an RF voltage or can simply connect the showerhead 109 to a ground reference potential. The second RF generator 125 and the second RF matching network 129 may each or collectively be referred to as a power supply and provide RF / bias voltage to the ESC 101. In one embodiment, the first RF generator 123 and the first RF matching network 127 provide power that can ionize the gas and drive the plasma. In another embodiment, the second RF generator 125 and the second RF matching network 129 provide power that can ionize the gas and drive the plasma. One of the RF generators 123, 125 may be a high power RF generator that generates, for example, 6-10 kilowatts (kW) or more.

[0072] The second RF matching network 129 includes an impedance 128 and supplies power to RF electrodes, such as RF electrodes 131, 133 in plates 102, 103. The RF electrode may be located in one or both of plates 102, 103. The location of the RF electrode may be close to the upper surface of the ESC 101 (for example, when the ESC 101 is used as a clamping electrode) and / or located in other locations in the ESC 101 (for example, when the ESC 101 is used for bias purposes). Alternatively or additionally, the RF electrode may receive power from other power sources. For example, some of the RF electrodes may receive power from the power supply 135 instead of from the second RF matching network 129, or some of the RF electrodes may receive power from the power supply 135 in addition to receiving power from the second RF matching network 129. In some embodiments, the power supply 135 does not include a matching network and / or no matching network is provided between the power supply 135 and the RF electrode. Some of the RF electrodes may receive power from the second RF matching network 129 and / or the power supply 135 to electrostatically clamp the substrate to the top plate 102. The power supply 135 may be controlled by the system controller 121. A tuning circuit 139 may be connected between (i) the second RF matching network 129 and a corresponding electrode of the plurality of electrodes 131, 133, 137, and (ii) the power supply 135 and a corresponding electrode of the plurality of electrodes 131, 133, 137. In one embodiment, the tuning circuit 139 is disposed outside the processing chamber 104, separate from and downstream of the second RF matching network 129. An example of the tuning circuit 139 is shown in FIG. Figure 2-11 middle.

[0073] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ... and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source 132 supplies one or more precursors and mixtures thereof. The gas source 132 may also supply etching gas, carrier gas, and / or purge gas. Evaporated precursors may also be used. The gas source 132 is connected to the manifold 140 through valves 134-1, 134-2, ... and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ... and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 140 is fed to the processing chamber 104. For example only, the output of the manifold 140 is fed to the showerhead 109.

[0074] The substrate processing system 100 also includes a cooling system 141 including a temperature controller 142 connected to the TCE 110. In one embodiment, the TCE 110 is not included. Although shown separate from the system controller 121, the temperature controller 142 can be implemented as part of the system controller 121. One or more of the plates 102, 103 can include multiple temperature control zones (e.g., 4 zones, each zone including 4 temperature sensors).

[0075] The temperature controller 142 can control the operation and thus the temperature of the TCE 110 to control the temperature of the plates 102, 103 and the substrate (e.g., substrate 107). The temperature controller 142 and / or the system controller 121 can control the flow rate of the backside gas (e.g., helium) flowing to the gas channel 115 for cooling the substrate by controlling the gas flow from one or more of the gas sources 132 to the gas channel 115. The temperature controller 142 can also communicate with the coolant assembly 146 to control the flow (pressure and flow rate of the cooling fluid) of the first coolant through the channel 116. The first coolant assembly 146 can receive the cooling fluid from a reservoir (not shown). For example, the coolant assembly 146 can include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to cause the coolant to flow through the channel 116 to cool the bottom plate 103. The temperature controller 142 can control the flow rate of the coolant and its temperature. The temperature controller 142 controls the current supplied to the TCE 110 and the pressure and flow rate of the gas and / or coolant supplied to the channels 115 and 116 based on the parameters detected by the sensors 143 and 144 in the processing chamber 104. The sensors 143 and 144 may include resistive temperature devices, thermocouples, digital temperature sensors, temperature probes, and / or other suitable temperature sensors. The sensors 143 and 144 and / or other sensors included in the substrate processing system 100 may be used to detect parameters such as temperature, gas pressure, voltage, current level, etc. During the etching process, the substrate 107 may be heated to a predetermined temperature (e.g., 120 degrees Celsius (°C)) in the presence of a high power plasma. The flow of gas and / or coolant flowing through the channels 115 and 116 reduces the temperature of the base plate 103, thereby reducing the temperature of the substrate 107 (e.g., from 120°C to 80°C).

[0076] The valve 156 and the pump 158 can be used to exhaust reactants from the processing chamber 104. The system controller 121 can control the components of the substrate processing system 100, including controlling the level of the RF power supplied, the pressure and flow rate of the gas supplied, RF matching, etc. The system controller 121 controls the state of the valve 156 and the pump 158. The robot 170 can be used to transfer the substrate to the ESC 101 and remove it from the ESC 101. For example, the robot 170 can transfer the substrate between the ESC 101 and the load lock 172. The robot 170 can be controlled by the system controller 121. The system controller 121 can control the operation of the load lock 172.

[0077] Valves, gas and / or coolant pumps, power supplies, RF generators, etc. may be referred to as actuators. TCEs, gas channels, coolant channels, etc. may be referred to as temperature adjustment elements.

[0078] The system controller 121 may control the state of the impedance of the tuning circuit 139. Examples of impedance are shown in Figure 7-11 The impedance of the tuning circuit 139 may be adjusted based on feedback signals received from sensors 143, 144, 145 and / or other sensors of one or more of the substrate support 101, the processing chamber 104, the second RF matching network 129, and / or the power supplies 125, 135. The sensor 145 may detect a voltage, current level, power level in the second RF matching network 129. Although the sensors are shown in the bottom plate 103, one or more of the sensors may be located in the top plate 102. The sensor 144 may be located at any location in the substrate support 101. The sensor 143 may be located at any location in the processing chamber 104.

[0079] The system controller 121 may also control the state of the impedance 128. The state of the impedance 128 may be set so that one or more impedances of one or more outputs of the second RF matching network 129 match the impedance seen at the input of the tuning circuit 139. The impedance seen at the input of the tuning circuit 139 is based on the impedance of the substrate support 101 and the tuning circuit 139. When adjusting the impedance of the tuning circuit 139, the system controller 121 may also adjust the impedance of the second RF matching network 129 accordingly.

[0080] Although below Figure 2-11 Although a specific number of tuning circuits, impedances, clamping electrodes, RF electrodes, and / or other elements are shown in the illustrations, any number of each may be included. In addition, although a specific arrangement of tuning circuits, impedances, clamping electrodes, and RF electrodes is shown, and they have specific sizes, shapes, and patterns, the elements described may be arranged in a different manner and have different sizes, shapes, and patterns.

[0081] Figure 2A capacitive coupling circuit 200 is shown, which includes a clamping tuning circuit 202, an RF tuning circuit 204, a clamping electrode 206, and an RF electrode 208. A cross-sectional view of a showerhead (or upper electrode) 210 and an ESC 212 is shown. The showerhead 210 may be connected to a reference potential or ground 214. In one embodiment, the showerhead 210 is composed of Figure 1 The first RF matching network 127 provides RF power. Plasma 216 is provided between the showerhead 210 and the ESC 212. A substrate 218 is placed on the ESC 212.

[0082] The clamp tuning circuit 202 may be used to control the clamp voltage, current level, phase, power level, and / or frequency provided to the clamp electrode 206. The RF tuning circuit 204 may be used to control the bias voltage, current level, power level, and / or frequency provided to the RF electrode 208. The tuning circuits 202, 204 may be configured to provide, for example, Figure 1 The second RF matching network 129 (or the first power supply), and / or Figure 1 The power supply 135 (or the second power supply) receives power P 内 , P 外 and is used to adjust the pressure drop across the plasma. This may include adjusting the Figure 1 The voltage difference between each pair of points above the surface of the substrate support 101. Figure 6 Examples of tuning circuits 202, 204 are shown. Figure 6 As shown in , the tuning circuits 202, 204 may include one or more of the impedances. The tuning circuits 202, 204 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in the tuning circuits 202, 204 are shown in Figure 7-11 The impedance may be connected in series or in parallel, may be a shunt reactance, and / or may include capacitors, inductors, resistors, reactances, transmission lines, shorted or open circuits, filter elements (or filters), and / or other impedances. For example, the clamping electrode 206 may be circular and the RF electrode 208 may be annular.

[0083] Figure 3 A capacitive coupling circuit 300 is shown, which includes a first clamping tuning circuit 302, a second clamping tuning circuit 303, an external RF tuning circuit 304, a first clamping electrode 306, a second clamping electrode 307, and an RF electrode 308. A cross-sectional view of a showerhead (or upper electrode) 310 and an ESC 312 is shown. The showerhead 310 can be connected to a reference potential or ground 314. In one embodiment, the showerhead 310 is composed of Figure 1The first RF matching network 127 provides RF power. Plasma 316 is provided between the showerhead 310 and the ESC 312. A substrate 318 is placed on the ESC 312.

[0084] The clamping tuning circuits 302, 303 may be used to control the clamping voltage, current level, power level and / or frequency provided to the clamping electrodes 306, 307. The RF tuning circuit 304 may be used to control the bias voltage, current level, power level and / or frequency provided to the RF electrode 308. The tuning circuits 302, 303, 304 may be adjusted from, for example, Figure 1 The second RF matching network 129 (or the first power supply), Figure 1 power source 135 (or a second power source) and / or receives power P from one or more other power sources 夹持1 , P 夹持2 With P 外 Tuning circuits 302, 303, 304 may be used to adjust the voltage drop across the plasma. In one embodiment, P 夹持1 Equal to P 夹持2 . Figure 6 Examples of tuning circuits 302, 303, 304 are shown. Figure 6 As shown in FIG. 1 , the tuning circuits 302, 303, 304 may include one or more of the impedances. The tuning circuits 302, 303, 304 may not include parallel impedance paths, or may include transmission lines instead of series impedance paths. Examples of impedances that may be included in the tuning circuits 302, 303, 304 are shown in FIG. Figure 7-11 The impedance may be connected in series or in parallel, may be a shunt reactance, and / or may include capacitors, inductors, resistors, reactances, transmission lines, shorted or open circuits, filter elements, and / or other impedances. For example, the clamping electrodes 306, 307 may be circular, and the RF electrode 308 may be annular.

[0085] Figure 4 A capacitive coupling circuit 400 is shown, which includes a clamping tuning circuit 402, an internal RF tuning circuit 404, an external RF tuning circuit 405, a clamping electrode 406, an internal bias electrode 408, and an external bias electrode 409. A cross-sectional view of a showerhead (or upper electrode) 410 and an ESC 412 is shown. The showerhead 410 can be connected to a reference potential or ground 414. In one embodiment, the showerhead 410 is composed of Figure 1 The first RF matching network 127 provides RF power. Plasma 416 is provided between the showerhead 410 and the ESC 412. A substrate 418 is placed on the ESC 412.

[0086] The clamping tuning circuit 402 may be used to control the clamping voltage, current level, phase, power level, and / or frequency provided to the clamping electrode 406. The RF tuning circuits 404, 405 may be used to control the bias voltage, current level, power level, and / or frequency provided to the biasing electrodes 408, 409. The tuning circuits 402, 404, 405 may be provided from, for example, Figure 1 The second RF matching network 129 (or the first power supply), Figure 1 power source 135 (or a second power source), and / or receiving power P from one or more other power sources 夹持 , P 内 , P 外 The tuning circuits 402, 404, 405 may be used to adjust the voltage drop across the plasma. Figure 6 Examples of tuning circuits 402, 404, 405 are shown. Figure 6 As shown in FIG. 1 , the tuning circuits 402, 404, 405 may include one or more of the impedances. The tuning circuits 402, 404, 405 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of impedances that may be included in the tuning circuits 402, 404, 405 are shown in FIG. Figure 7-11 The impedance may be connected in series or in parallel, may be a shunt reactance, and / or may include capacitors, inductors, resistors, reactances, transmission lines, shorted or open circuits, filter elements, and / or other impedances. For example, the clamping electrode 406 and the inner bias electrode 408 may be circular, and the outer bias electrode 409 may be annular.

[0087] Figure 5 A capacitive coupling circuit 500 is shown, which includes a clamping tuning circuit 502, a first internal RF tuning circuit 504, a second internal tuning circuit 505, an external RF tuning circuit 506, a clamping electrode 507, a first internal bias electrode 508, a second internal bias electrode 509, and an external bias electrode 510. A cross-sectional view of a showerhead (or upper electrode) 511 and an ESC 512 is shown. The showerhead 511 can be connected to a reference potential or ground 514. In one embodiment, the showerhead 511 is composed of Figure 1 The first RF matching network 127 provides RF power. Plasma 516 is provided between the showerhead 511 and the ESC 512. A substrate 518 is placed on the ESC 512.

[0088] The clamping tuning circuit 502 may be used to control the clamping voltage, current level, power level and / or frequency provided to the clamping electrode 507. The RF tuning circuits 504, 505, 506 may be used to control the bias voltage, current level, phase, power level and / or frequency provided to the biasing electrodes 508, 509, 510. The tuning circuits 502, 504, 505, 506 may be provided, for example, Figure 1 The second RF matching network 129 (or the first power supply), Figure 1 power source 135 (or a second power source), and / or receiving power P from one or more other power sources 夹持 , P 内1 , P 内2 , P 外 The tuning circuits 502, 504, 505, 506 may be used to adjust the voltage drop across the plasma. Figure 6 Examples of tuning circuits 502, 504, 505, 506 are shown. Figure 6 As shown in FIG. 1 , the tuning circuits 502, 504, 505, 506 may include one or more of the impedances. The tuning circuits 502, 504, 505, 506 may not include a parallel impedance path, or may include a transmission line instead of a series impedance path. Examples of impedances that may be included in the tuning circuits 502, 504, 505, 506 are shown in FIG. Figure 7-11 The impedance may be connected in series or in parallel, may be a shunt reactance, and / or may include capacitors, inductors, resistors, reactances, transmission lines, shorted or open circuits, filter elements, and / or other impedances. For example, the clamping electrode 507 and the biasing electrodes 508, 509 may be circular, and the external biasing electrode 510 may be annular.

[0089] Figure 6 A tuning circuit 600 is shown for an electrode (or load) 602 (eg, a clamping electrode or a biasing electrode). The tuning circuit 600 may replace Figure 2-5 Any one of the tuning circuits 202, 204, 302, 304, 305, 402, 404, 405, 502, 504, 505 and 506. Figure 9-10 An example of a tuning circuit 600 is shown in FIG. The tuning circuit 600 may be powered by an RF power source 604 (e.g. Figure 1 The tuning circuit 600 may include a series impedance path 605 and a series impedance group 606 and a parallel impedance path 607 and a parallel impedance group 608. The series impedance group 606 includes one or more impedances 609 connected in series between the RF power source 604 and the load 602. The series impedance group 606 and the one or more impedances 609 are connected between the load 602 and a source terminal 610. The source terminal 610 is connected to the RF power source 604. The parallel impedance group 608 is connected between (i) the source terminal 610 connected between the RF power source 604 and the series impedance group 606 and (ii) a reference terminal or ground 612. The parallel impedance group 608 may include one or more impedances 613 connected in parallel between the source terminal 610 and the reference terminal 612.

[0090] One or more of the impedances 609, 613 may be fixed impedances. Additionally or alternatively, one or more of the impedances 609, 613 may be variable impedances that may be adjusted by Figure 1 The system controller 121 adjusts the current based on, for example, the current processing recipe; the current operating parameters; the measured parameters, and / or based on one or more sensors (such as Figure 1 and / or characteristics and / or properties of the processing system, ESC, and substrate.

[0091] Although in the following Figure 7-11 Certain impedances are shown, but others may be included. Impedances may include "stray" inductance from wires and / or other conductive circuit elements.

[0092] Figure 7 The tuning circuit 700 is shown to be connected to a single RF power supply 702. The tuning circuit 700 includes inductors L1-L3 and capacitors C1-C3 connected in series for two clamping electrodes 706, 708 and a biasing electrode ring 710. The RF power supply 702 may be similar to Figure 1 The RF power supply 702 is operated in the manner of the power supplies 129, 135 and can be connected to a reference terminal or ground 711. In one embodiment (referred to as a grounded platform configuration), the RF power supply 702 is not included and the capacitors C1-C3 are connected to ground 711.

[0093] exist Figure 7 , a cross-sectional view of the plurality of electrodes 706, 708, 710 is shown. The plurality of electrodes 706, 708, 710 may be arranged concentrically. L1 and C1 are connected in series between (i) the RF power source 702 and the common terminal 712 and (ii) the first inner clamping electrode 706. L2 and C2 are connected in series between (i) the RF power source 702 and the common (or source) terminal 712 and (ii) the central terminal 714, which is connected to two points on the bias electrode ring 710. L3 and C3 are connected in series between (i) the RF power source 702 and the common terminal 712 and (ii) the second inner clamping electrode 708.

[0094] Inductors L1-L3 and capacitors C1-C3 may have fixed values ​​or may be formed as described above. Figure 1 The variable device is controlled by the system controller 121. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be included in the tuned circuit 700.

[0095] Figure 7 An example is provided when power is provided to a common node (or terminal) and split to provide power to multiple electrodes. The impedance of each path of each electrode can be changed by the impedance (or inductance and capacitance connected in series) in the corresponding path.

[0096] Figure 8 The tuning circuit 800 is shown to be connected to a single RF power supply 802. The tuning circuit 800 includes shunt inductors L1-L3 and shunt capacitors C1-C3 for two clamping electrodes 804, 806 and a bias electrode ring 808. The RF power supply 802 may be similar to Figure 1 The RF power source 802 is connected to a common (or source) terminal 812 which is connected to the clamping electrodes 802, 806 and to a central terminal 814.

[0097] In one embodiment (referred to as a ground platform configuration), an RF power source 802 is not included and terminal 812 is connected to ground 811. When terminal 812 is connected to ground 811, one or more series-connected impedances may be connected between (i) node 820 and ground 811, (ii) node 822 and ground 811, and / or node 824 and ground 811. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may occur, for example, when RF power is provided to the corresponding showerhead.

[0098] A cross-sectional view of electrodes 802, 806, 808 is shown. Electrodes 802, 806, 808 may be arranged concentrically. L1 and C1 are connected in parallel between a first terminal 820 and ground 811. The first terminal 820 is connected between a common terminal 812 and the first clamping electrode 802. L2 and C2 are connected in parallel between a second terminal 822 and ground 811. The second terminal 822 is connected between the common terminal 812 and the first clamping electrode 802. L3 and C3 are connected in parallel between a third terminal 824 and ground 811. The third terminal 824 is connected between the common terminal 812 and the second clamping electrode 806.

[0099] Inductors L1-L3 and capacitors C1-C3 may have arbitrary and / or predetermined fixed values, or may be formed by the above-mentioned Figure 1 Variable devices controlled by the system controller 121. Although inductors L1-L3 and capacitors C1-C3 are shown, other impedances may be included in the tuned circuit 800.

[0100] Figure 8 When power is provided to a common node and shunted to provide power to multiple electrodes, the impedance of each path of each electrode can be changed by connecting the shunt impedance (or shunt inductance and capacitance) to the corresponding path.

[0101] Fig. 9A tuning circuit 900 is shown connected to dual RF power supplies 902, 904. The tuning circuit 900 includes series connected inductors L1-L3 and capacitors C1-C3 and shunt inductors L4-L6 and capacitors C4-C6 for two clamping electrodes 906, 908 and a bias electrode ring 910. The RF power supplies 902, 904 can be connected in a manner similar to Figure 1 The RF power supplies 902, 904 are connected to a common (or source) terminal 912 and may provide power at the same frequency or at different frequencies.

[0102] In one embodiment (referred to as a ground platform configuration), RF power supplies 902, 904 are not included, and terminal 912 is connected to ground 911. When terminal 912 is connected to ground 911, one or more series-connected impedances may be connected between (i) node 920 and ground 911, (ii) node 922 and ground 911, and / or node 924 and ground 911. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may occur, for example, when RF power is provided to the corresponding showerhead.

[0103] Inductor L1 and capacitor C1 are connected in series between common terminal 912 and first clamping electrode 906, and inductor L2 and capacitor C2 are connected in series between center terminal 914 and common terminal 912. The center terminal is connected to two points on bias electrode ring 910.

[0104] A cross-sectional view of a plurality of electrodes 906, 908, 910 is shown. The plurality of electrodes 906, 908, 910 may be arranged concentrically. L4 is connected in parallel with C4 between a first terminal 920 and ground 911. The first terminal 920 is connected between capacitor C1 and a common terminal 912. L5 is connected in parallel with C5 between a second terminal 922 and ground 911. The second terminal 922 is connected between capacitor C2 and the common terminal 912. L6 is connected in parallel with C6 between a third terminal 924 and ground 911. The third terminal 924 is connected between capacitor C3 and the common terminal 912.

[0105] The inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values ​​or may be as described above. Figure 1 Variable devices controlled by the system controller 121. Although inductors L1-L6 and capacitors C1-C6 are shown, the tuned circuit 900 may include other impedances. L4-L6 and C4-C6 may be any network that may not include inductors and / or capacitors.

[0106] Fig.10Two tuning circuits 1000, 1002 are shown that can be connected to respective RF power supplies 1004, 1006. The first tuning circuit 1000 includes series-connected inductors L1, L3 and capacitors C1, C3 and shunt inductors L4, L6 and capacitors C4, C6 for two clamping electrodes 1010, 1012. The second tuning circuit 1002 includes series-connected inductors L2 and capacitors C2 and shunt inductors L5 and capacitors C5 for biasing electrode ring 1014. The RF power supplies 1004, 1006 can be similar to Figure 1 The RF power source 1004 is connected to a common (or source) terminal 1018, which is connected to C1, C3, C4, C6, L4, L6. The RF power source 1006 is connected to a central terminal 1020 through C2 and L2. The RF power sources 1004, 1006 can provide power at the same frequency or different frequencies.

[0107] Inductor L1 and capacitor C1 are connected in series between common terminal 1018 and first clamping electrode 1010. Inductor L2 and capacitor C2 are connected in series between center terminal 1020 and RF power source 1006. Center terminal 1020 is connected to two points on bias electrode ring 1014.

[0108] A cross-sectional view of a plurality of electrodes 1010, 1012, 1014 is shown. The electrodes 1010, 1012, 1014 may be arranged concentrically. L4 is connected in parallel with C4 between a first terminal 1030 and ground 1016. The first terminal 1030 is connected between capacitor C1 and a common terminal 1018. L5 is connected in parallel with C5 between a second terminal 1032 and ground 1016. The second terminal 1032 is connected between capacitor C2 and a common terminal 1018. L6 is connected in parallel with C6 between a third terminal 1034 and ground 1016. The third terminal 1034 is connected between capacitor C3 and a common terminal 1018.

[0109] The inductors L1-L6 and capacitors C1-C6 may have arbitrary and / or predetermined fixed values ​​or may be as described above. Figure 1 Variable devices controlled by the system controller 121. Although inductors L1-L6 and capacitors C1-C6 are shown, other impedances may be included in the tuned circuit 1000. L4-L6 and C4-C6 may be any network that may not include inductors and / or capacitors.

[0110] In one embodiment, RF power source 1004 is not included, and terminal 1018 is connected to ground 1016. In another embodiment, RF power source 1006 is not included, and terminal 1032 is connected to ground 1016. In yet another embodiment, neither RF power source 1004, 1006 is included, and both terminals 1018 and 1032 are connected to ground 1016. When terminal 1018 and / or terminal 1032 are connected to ground 1016, one or more series-connected impedances may be connected between (i) node 1030 and ground 1016, (ii) node 1034 and ground 1016, and / or node 1032 and ground 1016. The one or more series-connected impedances may be similar to impedances L1-L3 and C1-C3, or may include other impedances. This may occur, for example, when RF power is provided to a corresponding showerhead.

[0111] Fig.11 A tuning circuit 1100 is shown, comprising capacitors C1, C2 and inductors L1, L2 connected in parallel for two clamping electrodes 1102, 1104 and a biasing electrode ring 1106. The electrodes 1102, 1104, 1106 may be arranged concentrically. Capacitors C1 and C2 are connected in series (i) between the clamping electrodes 1102, 1104, and (ii) between power supply terminals 1110, 1112. Inductors L1, L2 are connected in parallel with capacitors C1, C2, respectively, and in series (i) between the clamping electrodes 1102, 1104, and (ii) between the power supply terminals 1110, 1112. Central terminals 1114, 1116 are connected between capacitors C1, C2 and between inductors L1, L2, respectively. Central terminals 1114, 1116 are connected to two of the following: (i) two points on the bias electrode ring 1106, and (ii) a third (or central) power terminal 1118. Power terminals 1110, 1112 are connected to the clamping electrodes 1102, 1104, respectively. Power terminals 1110, 1112, 1118 can be connected to respective power sources. In one embodiment, one or more of the power terminals 1110, 1112, 1118 are not connected to an RF power source but are connected to a reference terminal or ground.

[0112] The inductors L1-L2 and capacitors C1-C2 may have arbitrary and / or predetermined fixed values ​​or may be formed by the above-mentioned Figure 1 The inductors L1-L2 and capacitors C1-C2 are variable devices controlled by the system controller 121. Although inductors L1-L2 and capacitors C1-C2 are shown, other impedances may be included in the tuned circuit 1100. Inductors L1-L2 and capacitors C1-C2 are coupling elements connected between the electrodes to provide power at multiple frequencies to each electrode.

[0113] The tuning circuit 1100 can be used with Figure 3 ,5 For example, capacitors C1, C2 and inductors L1, L2 can be connected similarly to: Figure 3 Electrodes 306, 307 and an electrode ring 308; Figure 5 Electrodes 508, 509 and an electrode ring 510; Figure 7 Electrodes 706, 708 and an electrode ring 710; Figure 8 Electrodes 802, 806 and an electrode ring 808; Fig. 9 Electrodes 906, 908 and an electrode ring 910; and Fig.10 Electrodes 1010 , 1012 and electrode ring 1014 .

[0114] exist Figure 2-11 In the above example, if power of multiple frequencies is provided, the path to a specific electrode may include a frequency-dependent filter element to provide power of a specific frequency to the electrode. The above impedance may include a frequency-dependent filter element. In addition, the power provided to different electrodes may be provided by separate (or different) power supplies operating at the same frequency or different frequencies, so that the power provided by the power supplies has the same frequency or different frequencies. Figure 9-10 An example is shown in which multiple power supplies are included. Alternatively, one or more of the power supplies may not be included, and the corresponding terminals (such as terminals 912, 1018, 1032) may be connected to a reference terminal or ground.

[0115] Fig.12 An exemplary method of operating a substrate processing system is shown, which includes setting and adjusting the impedance value of a tuning circuit for an electrode of an electrostatic chuck. Although the following operations are mainly directed to Figure 1-11 The operation is described in detail with reference to the embodiment of the present invention, but the operation can be easily modified to apply to other embodiments of the present invention. The operation can be performed repeatedly. The operation can be performed, for example, by Figure 1 The system controller 121 performs.

[0116] The method may begin at 1200. At 1202, a process to be performed is selected. Exemplary processes are cleaning processes, etching processes, deposition processes, annealing processes, etc. At 1204, a recipe including system operating parameters is determined for the selected process to be performed. Exemplary system operating parameters are: gas pressure and flow rate; temperature of the process chamber, ESC, and substrate; RF bias voltage; clamping voltage; electrode voltage, current level, power level and / or frequency, etc.

[0117] At 1206, characteristics and / or properties of the process chamber, the ESC, and the substrate are determined. Exemplary characteristics and properties are process chamber geometry, composition of the ESC, heating and cooling characteristics of the ESC (e.g., heating and cooling rates), dimensions of the ESC, composition of the substrate, materials of the ESC and / or substrate, etc.

[0118] At 1208, the system controller 121 may set system operating parameters. This may include controlling the operation of the actuators described above. At 1210, an impedance value of the tuning circuit is set based on the selected process, recipe, and system operating parameters. The impedance value may also be set based on features and / or characteristics of the processing chamber, ESC, and / or substrate, or the impedance value may alternatively be set based on features and / or characteristics of the processing chamber, ESC, and / or substrate. For example, a lookup table may be stored in a memory of the system controller 121 and / or accessed by the system controller 121 to associate impedance values ​​with other parameters, features, and / or characteristics described therein. As described above, the system controller 121 may also set the impedance 128 of the second RF matching network 129.

[0119] At 1212, the substrate may be placed on the ESC. This may include providing a clamping voltage to clamp the substrate to the ESC. At 1214, a processing operation is performed. Exemplary processing operations are cleaning operations, gas flows, plasma flows and excitations, etching operations, deposition operations, annealing operations, post-annealing operations, cleaning the process chamber, and the like.

[0120] While performing operation 1212, operations 1216, 1218, 1220, 1222 may be performed. At 1216, a sensor output signal is monitored, the sensor output signal comprising sensor output data of the substrate processing system. This may include Figure 1 The sensors 143, 144, 145 receive signals. At 1218, parameters may be determined based on sensor output signals, data, and / or corresponding measurements, such as temperature, gas pressure, voltage, current level, power level, etc., from the sensors 143, 144, 145 and / or other sensors.

[0121] At 1220, the system controller 121 may decide whether to adjust the impedance value of the tuning circuit based on the measured values ​​and / or the determined parameters. The decision may be based on the selected process, recipe, system operating parameters and / or characteristics and / or properties of the processing chamber, ESC, and / or substrate. The characteristics may change dynamically. In one embodiment, the impedance value is adjusted based on the change in the characteristic to follow a predetermined trajectory. The predetermined trajectory may be, for example, a curve stored in a memory. A table may be stored in the memory to associate the impedance value with other values ​​and parameters. If one or more impedance values ​​are to be changed, operation 1222 is performed, otherwise operation 1216 may be performed. In one embodiment, the power supplied to one or more electrodes is modulated by changing the value of the corresponding impedance. This may change stress, thickness, uniformity, refractive index, etch rate, deposition rate, and / or other intrinsic values ​​and / or profile parameters of the substrate.

[0122] At 1222, the system controller 121 adjusts one or more impedance values ​​of the tuning circuit, for example, by changing the inductance, capacitance, impedance, and / or resistance of the one or more impedances. The adjustment (or amount of adjustment) may be based on measured and / or determined parameters, selected processes, recipes, system operating parameters, and / or characteristics and / or properties of the processing chamber, ESC, and / or substrate. The system controller 121 may also adjust the impedance 128 of the second RF matching network 129 as described above. After operation 1222, operation 1216 may be performed.

[0123] At 1224, the system controller 121 determines whether to modify the current process or perform another process. If the current process is to be modified or another process is to be performed, operation 1202 may be performed. If the current process is not to be modified and further processing is not desired, the method may end at 1226.

[0124] The above operations may represent illustrative examples. Depending on the application, the operations may be performed sequentially, synchronously, simultaneously, continuously, during overlapping time periods, or in a different order. In addition, any of the operations may not be performed or may be skipped depending on the progress and / or sequence of events.

[0125] Fig.13 An example of a substrate support 1300 is shown, which includes an outer ring electrode 1302 and two inner electrodes 1304, 1306. Figure 3 , 5As shown in FIGS. 7-11, electrodes 1302, 1304, 1306 are provided as examples of two inner electrodes and an outer ring electrode. The inner electrodes 1304, 1306 may be "D" shaped electrodes and arranged radially inwardly toward the outer ring electrode 1302. Gaps 1308 and 1310 exist between the inner electrodes 1304, 1306 and the outer ring electrode 1302. The outer ring electrode 1302 may include an outer ring 1311 and a linear central member 1312 extending between the inner electrodes 1304, 1306. Gaps 1314 and 1316 may exist between the inner electrodes 1304, 1306 and the central member 1312. The central member 1312 extends between the inner electrodes 1304, 1306 and passes through the middle region 1320 of the outer ring 1311 to evenly divide the middle region 1320 into two. In one embodiment, power is provided to the outer ring electrode 1302 at the center of the central member 1312. Power may be provided to portions of the inner electrodes 1304 , 1306 near the center of the central member 1312 .

[0126] The above example provides an RF tuning system including a tuning circuit having an impedance for setting and adjusting parameters of electrodes in an electrostatic chuck and / or other pedestals (or substrate supports). The pedestal may not be an electrostatic chuck. This provides spatial tuning of the power delivered to the plasma in a processing chamber (such as a PECVD reactor). The example provides new control parameters for film deposition and uniformity. As an example including an outer annular electrode and an inner circular electrode, the relative density of the plasma near the outer periphery of the substrate can be changed by modulating the power supplied to the electrode. As described above, this can be accomplished by modulating (or adjusting) the corresponding impedance. Unlike changing gas parameters or overall power, modulating the power supplied to the electrode does not necessarily change the global parameters that affect the entire substrate, which enables the selected area of ​​the film of the substrate (such as the circumferential edge of the film of the substrate) to be changed. This is different from conventional techniques that include using metal or dielectric rings to change the outside of the plasma, which can cause changes in gas flow and thus cause global effects, thereby changing the film in the substrate film beyond the circumferential edge of the film.

[0127] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not clearly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0128] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0129] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools and / or load locks connected to or connected to a specific system through an interface.

[0130] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing specific processing on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0131] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., processing and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control processing on the chamber.

[0132] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0133] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A substrate processing system for processing a substrate in a processing chamber, the substrate processing system comprising: A source terminal; A substrate support configured to support the substrate, the substrate support including a first electrode and a second electrode, and the first electrode and the second electrode receiving power from a first power source through the source terminal; And A first tuning circuit connected to at least one of the first electrode and the second electrode, wherein the first tuning circuit is allocated to tune a first signal provided to the first electrode, and the first tuning circuit includes at least one of the following: A first impedance group connected in series between the first electrode and the first power source, the first impedance group receiving the first signal from the first power source through the source terminal, or A second impedance group connected between an output of the first power source and a reference terminal, the second impedance group receiving the first signal from the first power source through the source terminal, Wherein no matching network is connected between the first power source and the first tuning circuit.

2. A substrate processing system for processing a substrate in a processing chamber, the substrate processing system comprising: A source terminal; A substrate support configured to support the substrate, wherein the substrate support includes a first electrode and a second electrode, and the first electrode and the second electrode receiving power from a first power source through the source terminal; A first tuning circuit connected to at least one of the first electrode and the second electrode and allocated to tune a first signal provided to the first electrode, the first tuning circuit being configured to adjust a voltage, current level, phase, power level, or frequency of the first signal provided from the first power source to the first electrode, and the first tuning circuit includes at least one of the following: A first impedance group connected in series between the first electrode and the first power source, wherein the first impedance group receives the first signal from the first power source through the source terminal, or A second impedance group connected between an output of the first power source and a reference terminal, wherein the second impedance group receives the first signal from the first power source through the source terminal; And A second tuning circuit configured to adjust a voltage, current level, phase, power level, or frequency of the first signal provided from the first power source to the second electrode.

3. A substrate processing system for processing a substrate in a processing chamber, the substrate processing system comprising: A source terminal; A substrate support configured to support the substrate, the substrate support including a first electrode and a second electrode, and the first electrode and the second electrode receiving power from a first power source through the source terminal; A first tuning circuit connected to at least one of the first electrode and the second electrode, the first tuning circuit being assigned to tune a first signal and a second signal provided to the first electrode, the first tuning circuit being configured to adjust a voltage, current level, phase, power level, or frequency of the first signal provided from the first power supply to the first electrode, and the first tuning circuit including at least one of the following: A first impedance group connected in series between the first electrode and the first power supply, the first impedance group receiving the first signal from the first power supply through the source terminal, or A second impedance group connected between an output of the first power supply and a reference terminal, the second impedance group receiving the first signal from the first power supply through the source terminal; And A second power supply and a second tuning circuit, the second tuning circuit being configured to adjust a voltage, current level, phase, power level, or frequency of the second signal provided from the second power supply to the second electrode.

4. A substrate processing system for processing a substrate in a processing chamber, the substrate processing system including: A source terminal; An electrostatic chuck configured to support the substrate, wherein the electrostatic chuck includes a first clamping electrode, a second clamping electrode, and an electrode ring, and the first clamping electrode and the second clamping electrode receive power from a first power supply through the source terminal; A first tuning circuit connected to at least one of the first clamping electrode and the second clamping electrode, the first tuning circuit being assigned to tune a first signal provided to the first clamping electrode, and the first tuning circuit including at least one of the following: A first impedance group connected in series between the first clamping electrode and the first power supply, the first impedance group receiving the first signal from the first power supply through the source terminal, or A second impedance group connected between an output of the first power supply and a reference terminal, the second impedance group receiving the first signal from the first power supply through the source terminal; wherein the first tuning circuit includes the first impedance group, a third impedance group, and a fourth impedance group, the first impedance group including a first inductor and a first capacitor connected between the first clamping electrode and the first power supply; the third impedance group including a second inductor and a second capacitor connected between the electrode ring and the first power supply, and the fourth impedance group including a third inductor and a third capacitor connected between the second clamping electrode and the first power supply.

5. A substrate processing system for processing a substrate in a processing chamber, the substrate processing system including: A substrate support configured to support the substrate, wherein the substrate support includes a plurality of electrodes; A plurality of tuning circuits respectively connected to the plurality of electrodes; And A first power supply connected to the plurality of tuning circuits and supplying power to the plurality of electrodes through an output of the first power supply and the plurality of tuning circuits.

6. The substrate processing system according to claim 5, wherein each of the plurality of tuning circuits includes a plurality of impedance groups.

7. The substrate processing system according to claim 5, wherein: at least one of the plurality of tuning circuits includes a series impedance group and a parallel impedance group; the series impedance group includes a first impedance, and the first impedance is connected in series with a second impedance; and; the parallel impedance group includes a third impedance, and the third impedance is connected in parallel with a fourth impedance group.

8. The substrate processing system according to claim 5, wherein at least one of the plurality of tuning circuits includes an impedance group that is connected to the output of the first power supply at a first end and to a reference terminal at a second end.

9. The substrate processing system according to claim 5, wherein the plurality of electrodes are concentrically arranged.

10. A substrate processing system for processing a substrate in a processing chamber, the substrate processing system comprising: a substrate support configured to support the substrate, the substrate support including a first one or more electrodes; and a first tuning circuit connected to the first one or more electrodes and a ground reference terminal, and the first tuning circuit includes: a series impedance group including a first impedance and a second impedance connected in series with the first impedance, and a parallel impedance group connected to the series impedance group, and the parallel impedance group includes a third impedance and a fourth impedance connected in parallel with the third impedance.

11. The substrate processing system according to claim 10, wherein the series impedance group is connected between the first one or more electrodes and the parallel impedance group.

12. The substrate processing system according to claim 10, wherein the first tuning circuit is connected in series with the first one or more electrodes and the ground reference terminal.

13. The substrate processing system according to claim 10, wherein the parallel impedance group is connected in series with the series impedance group.

14. The substrate processing system according to claim 10, wherein: the first one or more electrodes include a first electrode and a second electrode; and the first tuning circuit is connected to the first electrode and the second electrode.

15. The substrate processing system according to claim 10, further comprising a second tuning circuit, wherein: the substrate support includes a second one or more electrodes; and the second tuning circuit is connected to the second one or more electrodes and the ground reference terminal, and the second tuning circuit includes: a series impedance group including a first impedance and a second impedance connected in series with the first impedance of the second tuning circuit, and a parallel impedance group connected to the series impedance group of the second tuning circuit, and the parallel impedance group includes a third impedance and a fourth impedance connected in parallel with the third impedance of the second tuning circuit.

16. A substrate processing system for processing a substrate in a processing chamber, the substrate processing system comprising: a substrate support configured to support the substrate, the substrate support including a first one or more electrodes and a second one or more electrodes; One or more tuning circuits connected to the one or more first electrodes; A first power supply connected to the one or more first tuning circuits and supplying power to the one or more first electrodes through the output of the first power supply and the one or more first tuning circuits; And A second one or more tuning circuits connected to the second one or more electrodes and a ground reference terminal.

17. The substrate processing system according to claim 16, Wherein: The one or more first tuning circuits include: A first tuning circuit connected to a first electrode, and A second tuning circuit connected to a second electrode; The one or more first electrodes include the first electrode and the second electrode; And The first power supply supplies power to the first tuning circuit and the second tuning circuit through the output of the first power supply.

18. The substrate processing system according to claim 16, wherein each of the one or more first tuning circuits includes a plurality of impedance groups.

19. A substrate processing system for processing a substrate, the substrate processing system comprising: An electrostatic chuck configured to support the substrate, wherein the electrostatic chuck includes a first clamping electrode and an RF electrode; A clamping tuning circuit connected to at least the first clamping electrode and connected between a source terminal and the first clamping electrode, wherein the clamping tuning circuit includes one or both of the following: (i) a first impedance group connected in series between the first clamping electrode and a first power supply, and (ii) a second impedance group connected between the first power supply and a reference terminal; and The first power supply is connected to the clamping tuning circuit, Wherein the first clamping electrode is configured to receive power from the first power supply through the source terminal and the clamping tuning circuit.

20. The substrate processing system according to claim 19, wherein the electrostatic chuck further includes a second clamping electrode, and wherein the clamping tuning circuit is connected to one or both of the first clamping electrode and the second clamping electrode.

21. The substrate processing system according to claim 20, wherein the clamping tuning circuit is configured to control one or more of the following: the voltage, current level, phase, power level, and frequency of a signal provided to one or both of the first clamping electrode and the second clamping electrode.

22. The substrate processing system according to claim 19, wherein the first power supply is configured to supply power to a matching network, and wherein the matching network is connected between the first power supply and the source terminal.

23. The substrate processing system according to claim 19, wherein the clamping tuning circuit includes the first impedance group and the second impedance group.

24. The substrate processing system according to claim 19, further comprising: An RF tuning circuit connected to at least the RF electrode, wherein the RF electrode is configured to receive power from a second power supply through a central terminal or from the first power supply through the source terminal.

25. A substrate processing system for processing a substrate, the substrate processing system comprising: An electrostatic chuck configured to support the substrate, wherein the electrostatic chuck includes a clamping electrode and an RF electrode; An RF tuning circuit connected to at least the RF electrode and connected between a central terminal and the RF electrode, wherein the RF tuning circuit includes one or both of the following: (i) a first impedance group connected in series between the first clamping electrode and the first power supply, and (ii) a second impedance group connected between the first power supply and a reference terminal; And A first power supply connected to the RF tuning circuit, wherein the RF electrode is configured to receive power from the first power supply through the central terminal and the RF tuning circuit.

26. The substrate processing system according to claim 25, wherein the RF electrode includes an inner bias electrode and an outer bias electrode, and wherein the RF tuning circuit is connected to one or both of the inner bias electrode and the outer bias electrode.

27. The substrate processing system according to claim 26, wherein the RF tuning circuit is configured to control one or more of the following: the bias voltage, current level, power level, and frequency of a signal provided to one or both of the inner bias electrode and the outer bias electrode.

28. The substrate processing system according to claim 25, wherein the first power supply is configured to supply power to a matching network, and wherein the matching network is connected between the first power supply and the central terminal.

29. The substrate processing system according to claim 25, wherein the RF tuning circuit includes the first impedance group and the second impedance group.

30. The substrate processing system according to claim 25, further comprising: A clamping tuning circuit connected to at least the clamping electrode, wherein the clamping electrode is configured to receive power from a second power supply and a source terminal, or from the first power supply and the central terminal.

31. A substrate processing system for processing a substrate, the substrate processing system comprising: An electrostatic chuck configured to support the substrate, wherein the electrostatic chuck includes a clamping electrode and an RF electrode; An RF tuning circuit connected to at least the RF electrode and connected between a central terminal and the RF electrode; A clamping tuning circuit connected to at least the clamping electrode and connected between a source terminal and the first clamping electrode; And A first power supply connected to one or both of the RF tuning circuit and the clamping tuning circuit, and the first power supply is configured to supply power to one or both of the RF electrode and the clamping electrode through one or both of the source terminal and the central terminal and one or both of the clamping tuning circuit and the RF tuning circuit.

32. The substrate processing system according to claim 31, further comprising: A second power supply connected to the clamping electrode and configured to supply power to the clamping electrode, wherein the first power supply is connected to the RF electrode and configured to supply power to the RF electrode.

33. The substrate processing system according to claim 31, wherein each of the RF tuning circuit and the chuck tuning circuit includes a plurality of impedance groups.

34. A substrate processing system for processing a substrate, the substrate processing system comprising: An electrostatic chuck configured to support the substrate, wherein the electrostatic chuck includes a first chucking electrode, a second chucking electrode, and an RF electrode, wherein the first chucking electrode is configured to receive power from a first power supply through a source terminal; and A chuck tuning circuit connected to at least the first chucking electrode, wherein the chuck tuning circuit includes one or both of the following: (i) a first impedance group connected in series between the first chucking electrode and the first power supply, and (ii) a second impedance group connected between the first power supply and a reference terminal, wherein the chuck tuning circuit is connected to one or both of the first chucking electrode and the second chucking electrode.

35. A substrate processing system for processing a substrate, the substrate processing system comprising: An electrostatic chuck configured to support the substrate, wherein the electrostatic chuck includes a chucking electrode and an RF electrode, wherein the RF electrode includes an inner bias electrode and an outer bias electrode, wherein the RF electrode is configured to receive power from a first power supply through the central terminal; and An RF tuning circuit connected to at least the RF electrode, wherein the RF tuning circuit includes one or both of the following: (i) a first impedance group connected in series between the first chucking electrode and the first power supply, and (ii) a second impedance group connected between the first power supply and a reference terminal, wherein the RF tuning circuit is connected to one or both of the inner bias electrode and the outer bias electrode.

36. A substrate processing system for processing a substrate, the substrate processing system comprising: An electrostatic chuck configured to support the substrate, wherein the electrostatic chuck includes a chucking electrode and an RF electrode; An RF tuning circuit connected to at least the RF electrode; A chuck tuning circuit connected to at least the chucking electrode; A first power supply connected to one or both of the RF tuning circuit and the chuck tuning circuit, and the first power supply is configured to supply power to one or both of the RF electrode and the chucking electrode; And A second power supply connected to the chucking electrode and configured to supply power to the chucking electrode, wherein the first power supply is connected to the RF electrode and configured to supply power to the RF electrode.

37. A substrate support, comprising: An electrostatic chuck configured to support a substrate, wherein the electrostatic chuck includes a first chucking electrode, a second chucking electrode, and an RF electrode; A first chuck tuning circuit electrically connected to the first chucking electrode; A second chuck tuning circuit electrically connected to the second chucking electrode; An RF tuning circuit electrically connected to the RF electrode; And A first power supply configured to supply power to at least one of the RF electrode, the first chucking electrode, and the second chucking electrode.

38. The substrate support according to claim 37, wherein the RF tuning circuit is configured to control one or more of the following: the bias voltage, current level, power level, and frequency provided to the RF electrode.

39. A substrate support comprising: An electrostatic chuck configured to support a substrate, wherein the electrostatic chuck includes a clamping electrode, an inner bias electrode, and an outer bias electrode; A clamping tuning circuit electrically connected to the clamping electrode; An inner RF tuning circuit electrically connected to the inner bias electrode; An outer RF tuning circuit electrically connected to the outer bias electrode; And A first power supply configured to supply power to at least one of the inner bias electrode, the outer bias electrode, and the clamping electrode.

40. A substrate support comprising: An electrostatic chuck configured to support a substrate, wherein the electrostatic chuck includes a clamping electrode, a first inner bias electrode, a second inner bias electrode, and an outer bias electrode; A clamping tuning circuit electrically connected to the clamping electrode; A first inner RF tuning circuit electrically connected to the first inner bias electrode; A second inner RF tuning circuit electrically connected to the second inner bias electrode; An outer RF tuning circuit electrically connected to the outer bias electrode; And A first power supply configured to supply power to at least one of the clamping electrode, the first inner bias electrode, the second inner bias electrode, and the outer bias electrode.

41. A substrate support comprising: An electrostatic chuck configured to support a substrate, wherein the electrostatic chuck includes a first inner clamping electrode, a second inner clamping electrode, and an outer RF electrode; A tuning circuit electrically connected to the first inner clamping electrode, the second inner clamping electrode, and the outer RF electrode; A common terminal, wherein the first inner clamping electrode and the second inner clamping electrode are electrically connected to the tuning circuit through the common terminal; A central terminal, wherein the outer RF electrode is electrically connected to the tuning circuit through the central terminal; And A first power supply, wherein the first power supply is configured to supply power to at least one of the first inner clamping electrode, the second inner clamping electrode, and the outer RF electrode.

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