High-frequency module and communication device

Abstract

The invention provides a high-frequency module and a communication device, which can realize low and dwarfing of the high-frequency module. A high-frequency module (1) is provided with a mounting substrate (2) and a power amplifier (3). The mounting substrate (2) has a first main surface (21) and a second main surface (22). The first main surface (21) and the second main surface (22) face each other. The power amplifier (3) is disposed on a first main surface (21) of the mounting substrate (2), and has an RF bump (35) and a ground bump (34). The height of the ground bump (34) is higher than the height of the RF bump (35). The mounting substrate (2) has a first recess (51). The first recess (51) is formed in the first main surface (21) of the mounting substrate (2). The ground bump (34) is disposed in a first recess (51) of the mounting substrate (2).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly, to a high-frequency module including a power amplifier and a communication device including the high-frequency module. Background Art

[0002] Patent Document 1 discloses a passive on-package including a substrate having a recess. In the passive on-package described in Patent Document 1, bumps are disposed in the recess of the substrate.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2017-515295 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] However, in the conventional passive on-package described in Patent Document 1, it is difficult to reduce the height of a high-frequency module in which electronic components are disposed on a mounting substrate such as a passive on-package.

[0008] The present invention has been made in view of the above problems, and an object thereof is to provide a high-frequency module and a communication device capable of reducing the height.

[0009] Means for Solving the Problems

[0010] A high-frequency module according to one aspect of the present invention includes a mounting substrate and a power amplifier. The mounting substrate has a first main surface and a second main surface. The first main surface and the second main surface face each other. The power amplifier is disposed on the first main surface of the mounting substrate and has an RF bump and a ground bump. The height of the ground bump is higher than the height of the RF bump. The mounting substrate has a first recess. The first recess is formed on the first main surface of the mounting substrate. The ground bump is disposed in the first recess of the mounting substrate.

[0011] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module.

[0012] Effects of the Invention

[0013] According to the high-frequency module and the communication device according to the above aspect of the present invention, it is possible to reduce the height of the high-frequency module. Brief Description of the Drawings

[0014] Figure 1It is a cross-sectional view of the high-frequency module according to Embodiment 1.

[0015] Figure 2 It is a bottom view of the power amplifier of the high-frequency module as described above.

[0016] Figure 3 It is a top view of the mounting substrate of the high-frequency module as described above.

[0017] Figure 4 It is a block diagram of the communication device according to Embodiment 1.

[0018] Figure 5 It is a cross-sectional view of the high-frequency module according to Embodiment 2.

[0019] Figure 6 It is a cross-sectional view of the high-frequency module according to Embodiment 3.

[0020] Figure 7 It is a top view of the main part of the mounting substrate of the high-frequency module according to Embodiment 4.

[0021] Figure 8 A of [] is a cross-sectional view of the main part of the mounting substrate of the high-frequency module according to Embodiment 5. Figure 8 B of [] is a cross-sectional view of the main part of the mounting substrate of the high-frequency module according to Modification 1 of Embodiment 5. Figure 8 C of [] is a cross-sectional view of the main part of the mounting substrate of the high-frequency module according to Modification 2 of Embodiment 5.

[0022] Figure 9 It is a top view of the main part of the mounting substrate of the high-frequency module according to Embodiment 6.

[0023] Figure 10 It is a cross-sectional view of the high-frequency module according to Embodiment 7. Detailed implementation manners

[0024] Next, the high-frequency module 1 and the communication device 8 according to Embodiments 1 to 7 will be described with reference to the drawings. In the following embodiments and the like, the Figures 1 to 3 , Figures 5 to 10 are schematic diagrams, and the size ratios and thickness ratios of the respective structural elements in the drawings do not necessarily reflect the actual size ratios.

[0025] (Embodiment 1)

[0026] (1) High-frequency module

[0027] The structure of the high-frequency module 1 according to Embodiment 1 will be described with reference to the drawings.

[0028] As Figure 1As shown, the high-frequency module 1 according to Embodiment 1 includes a mounting substrate 2, a power amplifier 3, and a resin layer 41. The mounting substrate 2 has a first main surface 21 and a second main surface 22. The first main surface 21 and the second main surface 22 face each other. The power amplifier 3 is disposed on the first main surface 21 of the mounting substrate 2. The power amplifier 3 has a ground bump 34 and a plurality of RF bumps 35. The height of the ground bump 34 is higher than the height of the plurality of RF bumps 35. The mounting substrate 2 has a first recess 51. The first recess 51 is formed on the first main surface 21 of the mounting substrate 2. The ground bump 34 is disposed in the first recess 51 of the mounting substrate 2.

[0029] According to the high-frequency module 1 of Embodiment 1, the high-frequency module 1 can be made low-profile.

[0030] (2) Each structural element of the high-frequency module

[0031] Next, each structural element of the high-frequency module 1 according to Embodiment 1 will be described with reference to the drawings.

[0032] As Figure 1 shown, the high-frequency module 1 according to Embodiment 1 includes a mounting substrate 2, a power amplifier 3, a resin layer 41, and a plurality of external connection terminals (not shown).

[0033] (2.1) Mounting substrate

[0034] As Figure 1 shown, the mounting substrate 2 has a first main surface 21 and a second main surface 22. The first main surface 21 and the second main surface 22 face each other. More specifically, the first main surface 21 and the second main surface 22 face each other in the thickness direction D1 of the mounting substrate 2. The mounting substrate 2 is a substrate for disposing a plurality of electronic components, and is, for example, in the shape of a rectangular plate. The first main surface 21 and the second main surface 22 are, for example, rectangular. When the high-frequency module 1 is disposed on an external substrate (not shown), the second main surface 22 faces the external substrate.

[0035] The mounting substrate 2 has a plurality of dielectric layers 23 and a plurality of conductive layers. The mounting substrate 2 is, for example, a multilayer substrate having a plurality of dielectric layers 23 and a plurality of conductive layers. The plurality of dielectric layers 23 and the plurality of conductive layers are laminated in the thickness direction D1 of the mounting substrate 2.

[0036] Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 2. The plurality of conductive layers are formed in a predetermined pattern determined for each layer. The material of each conductive layer is, for example, copper.

[0037] The plurality of conductive layers includes a ground layer 64. The ground layer 64 is a layer set to ground potential (reference potential) and is provided inside the mounting substrate 2. When the high-frequency module 1 is disposed on an external substrate (e.g., a mother board), the ground layer 64 is connected to the ground of the external substrate via a via conductor or the like provided in the mounting substrate 2 and is thus maintained at ground potential (reference potential).

[0038] The mounting substrate 2 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. In addition, the mounting substrate 2 is not limited to an LTCC substrate and may be, for example, a printed circuit board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multi-layer substrate.

[0039] (2.2) Power amplifier

[0040] As Figure 1 shown, the power amplifier 3 is disposed on the first main surface 21 of the mounting substrate 2. More specifically, the power amplifier 3 is mounted on the first main surface 21 of the mounting substrate 2. The power amplifier 3 amplifies and outputs a transmission signal from the signal processing circuit 82 (see Figure 4 ).

[0041] As Figures 1 to 3 shown, the power amplifier 3 includes a main body portion 31, a plurality of electrodes 32, 33, a ground bump 34, and a plurality of RF bumps 35. The plurality of electrodes 32, 33 of the power amplifier 3 are connected to the first electrode 61 and the plurality of second electrodes 62 provided on the first main surface 21 of the mounting substrate 2 via the ground bump 34 and the plurality of RF bumps 35, whereby the power amplifier 3 is disposed on the first main surface 21 of the mounting substrate 2.

[0042] The main body portion 31 has a functional portion. The main body portion 31 is disposed on the mounting substrate 2 such that one main surface 311 of the main body portion 31 faces the mounting substrate 2 in the thickness direction D1 of the mounting substrate 2. More specifically, in a state where the power amplifier 3 is disposed on the mounting substrate 2, one main surface 311 of the main body portion 31 faces the first main surface 21 of the mounting substrate 2.

[0043] The electrode 32 is formed on one main surface 311 of the main body portion 31. In the thickness direction D1 of the mounting substrate 2, one main surface 311 of the main body portion 31 faces the mounting substrate 2. The electrode 32 is formed, for example, in a strip shape. In the example of Figure 2 , the electrode 32 is formed in a strip shape along the second direction D22.

[0044] A plurality of electrodes 33 are formed on one main surface 311 of the main body portion 31. The plurality of electrodes 33 are arranged, for example, in a manner of being disposed around the electrode 32 on one main surface 311 of the main body portion 31. For example, in the first direction D21, the plurality of electrodes 33 are disposed on both sides of the electrode 32.

[0045] The electrode 32 is an electrode for ground. In order to stabilize the ground potential, it is preferable to make the ground electrode large. Therefore, as Figure 2 and Figure 3 shown, when viewed from above in the normal direction of one main surface 311 on which the electrode 32 and the plurality of electrodes 33 are arranged, the area of the electrode 32 is larger than the area of each electrode 33. That is to say, the area of the ground electrode 32 is larger than the area of the RF signal electrode 33.

[0046] As Figure 1 shown, the ground bump 34 is a bump for connecting the ground electrode 32 to the ground layer 64 of the mounting substrate 2. The ground bump 34 is disposed on the electrode 32. The ground bump 34 is formed in a circular shape, for example. The ground bump 34 is formed of solder, for example.

[0047] The plurality of RF bumps 35 are conductive members for connecting the plurality of electrodes 33 for RF signals to the conductive layer of the mounting substrate 2. The plurality of RF bumps 35 are formed on the plurality of electrodes 33. The plurality of RF bumps 35 are formed of solder, for example.

[0048] The power amplifier 3 is an IC chip having a substrate and an amplification functional portion, for example. The substrate has a first surface and a second surface facing each other. The substrate is a gallium arsenide substrate, for example. The amplification functional portion includes at least one transistor formed on the first surface of the substrate. The amplification functional portion is a functional portion having a function of amplifying a transmission signal in a specified frequency band. The transistor is an HBT (Heterojunction Bipolar Transistor), for example. In the power amplifier 3, the power supply voltage from a power supply circuit (not shown) is applied between the collector and emitter of the HBT. The power amplifier 3 may further include, for example, a capacitor for DC blocking in addition to the amplification functional portion. The power amplifier 3 is mounted on the first main surface 21 of the mounting substrate 2 in a flip-chip mounting manner such that the first surface of the substrate faces the first main surface 21 side of the mounting substrate 2. When viewed from above in the thickness direction D1 of the mounting substrate 2, the outer peripheral shape of the power amplifier 3 is a quadrilateral shape.

[0049] (2.3) Configuration relationship between the mounting substrate and the power amplifier

[0050] As Figure 1As shown, the mounting substrate 2 has a first recess 51 and a plurality of second recesses 52. The first recess 51 is formed in the first main surface 21 of the mounting substrate 2. The first recess 51 has a bottom surface 511 and side surfaces 512. The plurality of second recesses 52 are formed in the first main surface 21 of the mounting substrate 2. Each of the plurality of second recesses 52 has a bottom surface 521 and side surfaces 522.

[0051] The mounting substrate 2 has a first electrode 61 and a plurality of second electrodes 62. The first electrode 61 is disposed in the first recess 51. More specifically, the first electrode 61 is disposed on the bottom surface 511 of the first recess 51. The plurality of second electrodes 62 are disposed in the plurality of second recesses 52. More specifically, the plurality of second electrodes 62 are disposed on the bottom surfaces 521 of the plurality of second recesses 52.

[0052] The ground bump 34 of the power amplifier 3 is disposed in the first recess 51 of the mounting substrate 2. More specifically, for the ground bump 34, the ground bump 34 is disposed in the first recess 51 such that at least a part of the ground bump 34 is received in the first recess 51.

[0053] By disposing the ground bump 34 of the power amplifier 3 in the first recess 51 of the mounting substrate 2, the height of the power amplifier 3 from the surface of the first main surface 21 of the mounting substrate 2 where the first recess 51 and the second recesses 52 are not formed can be made low, and thus the high-frequency module 1 can be made low-profile.

[0054] The plurality of RF bumps 35 of the power amplifier 3 are disposed in the plurality of second recesses 52 of the mounting substrate 2. More specifically, for each RF bump 35 of the plurality of RF bumps 35, the RF bump 35 is disposed in the second recess 52 such that at least a part of the RF bump 35 is received in the second recess 52.

[0055] By disposing the plurality of RF bumps 35 of the power amplifier 3 in the plurality of second recesses 52 of the mounting substrate 2, the height of the power amplifier 3 from the surface of the first main surface 21 of the mounting substrate 2 where the first recess 51 and the second recesses 52 are not formed can be made even lower, and thus the high-frequency module 1 can be made low-profile.

[0056] As described above, when viewed from the normal direction of one main surface 311 on which the ground bump 34 and the plurality of RF bumps 35 are disposed, the area of the ground electrode 32 is larger than the area of the RF signal electrode 33. The ground bump 34 covers the electrode 32 with a large area, and thus the area of the ground bump 34 is larger than the area of each RF bump 35. Therefore, as Figure 1 shown, in the normal direction of one main surface 311 of the power amplifier 3, that is, in the thickness direction D1 of the mounting substrate 2, the height of the ground bump 34 is higher than the height of each of the plurality of RF bumps 35.

[0057] In the thickness direction D1 of the mounting substrate 2, the first recess 51 of the mounting substrate 2 is deeper than each of the plurality of second recesses 52. Thus, the ground bumps 34 larger than each of the RF bumps 35 can be arranged in the first recess 51 deeper than each of the second recesses 52.

[0058] The mounting substrate 2 also has a plurality of via conductors 66. The plurality of via conductors 66 are, for example, columnar conductive members provided inside the mounting substrate 2. The plurality of via conductors 66 are used to electrically connect the electronic components arranged on the first main surface 21 of the mounting substrate 2 to the conductive layer of the mounting substrate 2. In addition, the plurality of via conductors 66 are used to electrically connect the conductive layer of the mounting substrate 2 to external connection terminals (not shown).

[0059] Figure 1 The illustrated via conductor 66 is connected to the first recess 51 in which the ground bump 34 is arranged. The via conductor 66 is used to electrically connect the power amplifier 3 arranged on the first main surface 21 of the mounting substrate 2 to the ground layer 64 of the mounting substrate 2.

[0060] By connecting the via conductor 66 to the first recess 51 in which the ground bump 34 is arranged, the length of the via conductor 66 can be made shorter compared to the case where the first recess 51 is not formed. Therefore, for example, the distance from the ground bump 34 to the ground layer 64 can be made shorter.

[0061] The power amplifier 3 has a main body portion 31 including a functional portion. The main body portion 31 of the power amplifier 3 is located outside the mounting substrate 2.

[0062] Thus, the strength of the mounting substrate 2 can be improved compared to the case where a recess for housing the main body portion 31 of the power amplifier 3 is formed in the mounting substrate 2.

[0063] (2.4) Resin layer

[0064] As Figure 1 shown, the resin layer 41 is arranged on the first main surface 21 of the mounting substrate 2. The resin layer 41 is in contact with the first main surface 21 of the mounting substrate 2 and covers at least a part of the power amplifier 3. Thus, the mounting substrate 2 and the power amplifier 3 can be protected.

[0065] The resin layer 41 contains resin and filler (not shown). The resin is, for example, epoxy resin. In the high-frequency module 1, the distance L1 between the main body portion 31 of the power amplifier 3 and the mounting substrate 2 is larger than the diameter of the filler contained in the resin layer 41. Thus, the resin layer 41 enters the periphery of the bumps (ground bumps 34, RF bumps 35) of the power amplifier 3. Therefore, when the high-frequency module 1 is mounted on the mother board, solder splash can be prevented. As a result, the connection reliability of the power amplifier 3 can be improved.

[0066] (2.5) External connection terminals

[0067] A plurality of external connection terminals (not shown) are arranged, for example, on the second main surface 22 of the mounting substrate 2. The plurality of external connection terminals are terminals for electrically connecting the mounting substrate 2 to an external substrate (not shown). The plurality of external connection terminals are arranged on the second main surface 22 of the mounting substrate 2 at intervals from each other.

[0068] The plurality of external connection terminals are each a flat conductive member. The material of the plurality of external connection terminals is, for example, a metal (e.g., copper, copper alloy, etc.).

[0069] Each external connection terminal is connected to an external connection electrode of the external substrate. In this specification, etc., "A (e.g., an external connection terminal) is connected to B (e.g., an external connection electrode of the external substrate)" not only means that A contacts B, but also includes the case where A is electrically connected to B via a conductor electrode, a conductor terminal, a wiring, or other circuit components, etc. The plurality of external connection terminals are connected to the external connection electrodes of the external substrate via a connection member (e.g., a solder bump) formed of a conductor, for example.

[0070] The plurality of external connection terminals include an antenna terminal, a signal input terminal, a signal output terminal, a control terminal, and a ground terminal. The antenna terminal is a terminal to which the antenna 81 (see Figure 4 ) is connected. The signal input terminal is a terminal for inputting a transmission signal (high-frequency signal) from the signal processing circuit 82 (see Figure 4 ) into the high-frequency module 1. The signal output terminal is a terminal for outputting a reception signal (high-frequency signal) from the high-frequency module 1 to the signal processing circuit 82. The control terminal is a terminal for inputting a control signal from the signal processing circuit 82 into a controller (not shown).

[0071] (3) Communication device

[0072] As Figure 4 shown, the communication device 8 includes a high-frequency module 1, an antenna 81, and a signal processing circuit 82. The communication device 8 is, for example, a portable terminal (e.g., a smart phone). In addition, the communication device 8 is not limited to a portable terminal, and may be, for example, a wearable terminal (e.g., a smart watch).

[0073] The high-frequency module 1 is configured to amplify a transmission signal (high-frequency signal) from the signal processing circuit 82 and output it to the antenna 81. In addition, the high-frequency module 1 is configured to amplify a reception signal (high-frequency signal) received by the antenna 81 and output it to the signal processing circuit 82. The high-frequency module 1 is controlled by the signal processing circuit 82, for example.

[0074] The high-frequency module 1 is, for example, a module capable of supporting the 4G (Fourth Generation Mobile Communication) standard and the 5G (Fifth Generation Mobile Communication) standard. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is a module capable of supporting carrier aggregation and dual connectivity.

[0075] In the communication device 8, the high-frequency module 1 can be electrically connected to an external substrate (not shown). The external substrate corresponds to, for example, the motherboard of a portable terminal and a communication device. In addition, the ability of the high-frequency module 1 to be electrically connected to the external substrate includes not only the case where the high-frequency module 1 is directly mounted on the external substrate, but also the case where the high-frequency module 1 is indirectly mounted on the external substrate. Further, the case where the high-frequency module 1 is indirectly mounted on the external substrate is a case where the high-frequency module 1 is mounted on another high-frequency module that is mounted on the external substrate, etc.

[0076] (3.1) Antenna

[0077] The antenna 81 is connected to an antenna terminal (not shown) of the high-frequency module 1. The antenna 81 has a transmission function of radiating a transmission signal output from the high-frequency module 1 through radio waves, and a reception function of receiving a reception signal as radio waves from the outside and outputting it to the high-frequency module 1.

[0078] (3.2) Signal processing circuit

[0079] The signal processing circuit 82 is connected to the high-frequency module 1. The signal processing circuit 82 processes the high-frequency signal passing through the high-frequency module 1. More specifically, the signal processing circuit 82 is configured to perform signal processing on the reception signal received from the high-frequency module 1. In addition, the signal processing circuit 82 is configured to perform signal processing on the transmission signal output to the high-frequency module 1.

[0080] The signal processing circuit 82 includes a baseband signal processing circuit 83 and an RF signal processing circuit 84.

[0081] The baseband signal processing circuit 83 is, for example, a BBIC (Baseband Integrated Circuit).

[0082] The baseband signal processing circuit 83 performs prescribed signal processing on signals from outside the signal processing circuit 82. More specifically, the baseband signal processing circuit 83 generates a transmission signal based on a baseband signal (such as a voice signal and an image signal) from outside the signal processing circuit 82, and outputs the generated transmission signal to the RF signal processing circuit 84.

[0083] The baseband signal processing circuit 83 performs prescribed signal processing on the signals from the RF signal processing circuit 84. More specifically, the baseband signal processing circuit 83 outputs the received signal received from the RF signal processing circuit 84 to the outside. The received signal processed by the baseband signal processing circuit 83 is used, for example, as an image signal for image display or as a voice signal for a call.

[0084] The RF signal processing circuit 84 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals (transmission signals and received signals).

[0085] The RF signal processing circuit 84 performs signal processing on the transmission signal output from the baseband signal processing circuit 83, and outputs the transmission signal after the signal processing to the high-frequency module 1. Specifically, the RF signal processing circuit 84 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 83, and outputs the transmission signal after the signal processing to the transmission path of the high-frequency module 1.

[0086] The RF signal processing circuit 84 performs signal processing on the received signal output from the high-frequency module 1, and outputs the received signal after the signal processing to the baseband signal processing circuit 83. Specifically, the RF signal processing circuit 84 performs signal processing such as down-conversion on the received signal output from the reception path of the high-frequency module 1, and outputs the received signal after the signal processing to the baseband signal processing circuit 83.

[0087] (4) Effects

[0088] In the high-frequency module 1 according to the first embodiment, the ground bump 34 of the power amplifier 3 is disposed in the first recess 51 of the mounting substrate 2. Thereby, the height of the power amplifier 3 from the surface of the first main surface 21 of the mounting substrate 2 where the first recess 51 and the second recess 52 are not formed can be made low, and thus the high-frequency module 1 can be made low-profile.

[0089] In the high-frequency module 1 according to the first embodiment, the first recess 51 is formed in the mounting substrate 2. Thereby, the distance between the power amplifier 3 and the wiring conductors or wiring elements built in the mounting substrate 2 can be made shorter than the case where the first recess 51 is not formed.

[0090] In the high-frequency module 1 according to Embodiment 1, the ground bump 34 is disposed in the first recess 51 of the mounting substrate 2, and the RF bump 35 is disposed in the second recess 52 of the mounting substrate 2. Thereby, the height of the power amplifier 3 from the surface of the first main surface 21 of the mounting substrate 2 where the first recess 51 and the second recess 52 are not formed can be made lower, and thus the high-frequency module 1 can be further miniaturized in height.

[0091] In the high-frequency module 1 according to Embodiment 1, the second recess 52 is formed in the mounting substrate 2. Thereby, compared with the case where the second recess 52 is not formed, the distance between the power amplifier 3 and the wiring conductor or the wiring element built in the mounting substrate 2 can be made shorter.

[0092] In the high-frequency module 1 according to Embodiment 1, the via conductor 66 is provided in the first recess 51 where the ground bump 34 is disposed. Thereby, compared with the case where the first recess 51 is not formed, the length of the via conductor 66 can be made shorter, and thus, for example, the distance from the ground bump 34 to the ground layer 64 of the mounting substrate 2 can be made shorter.

[0093] In the high-frequency module 1 according to Embodiment 1, the resin layer 41 that is in contact with the first main surface 21 of the mounting substrate 2 and covers at least a part of the power amplifier 3 is provided. Thereby, the mounting substrate 2 and the power amplifier 3 can be protected.

[0094] In the high-frequency module 1 according to Embodiment 1, the distance L1 between the main body portion 31 of the power amplifier 3 and the mounting substrate 2 is larger than the diameter of the filler contained in the resin layer 41. Thereby, the resin layer 41 enters the periphery of the bump of the power amplifier 3, and thus, when the high-frequency module 1 is mounted on the mother board, solder splash can be prevented. As a result, the connection reliability of the power amplifier 3 can be improved.

[0095] In the high-frequency module 1 according to Embodiment 1, the main body portion 31 of the power amplifier 3 is located outside the mounting substrate 2. Thereby, compared with the case where a recess for accommodating the main body portion 31 of the power amplifier 3 is formed in the mounting substrate 2, the strength of the mounting substrate 2 can be improved.

[0096] According to the high-frequency module 1 according to Embodiment 1, even when power amplifiers 3 having different sizes are disposed on the mounting substrate 2, the high-frequency module 1 can be miniaturized in height only by processing the mounting substrate 2. In other words, by only performing the process of forming the first recess 51 and the second recess 52 in the mounting substrate 2, the high-frequency module 1 can be miniaturized in height.

[0097] In the high-frequency module 1 according to Embodiment 1, the ground bump 34 is disposed in the first recess 51, and at least a part of the solder of the ground bump 34 fills the first recess 51. Thus, compared with the case where the ground bump 34 is not disposed in the first recess 51, the sum of the thickness of the mounting substrate 2 and the thickness of the ground bump 34 can be increased, and thus the strength of the mounting substrate 2 can be improved.

[0098] In the high-frequency module 1 according to Embodiment 1, the RF bump 35 is disposed in the second recess 52, and at least a part of the solder of the RF bump 35 fills the second recess 52. Thus, compared with the case where the RF bump 35 is not disposed in the second recess 52, the sum of the thickness of the mounting substrate 2 and the thickness of the RF bump 35 can be increased, and thus the strength of the mounting substrate 2 can be improved.

[0099] In the high-frequency module 1 according to Embodiment 1, the first recess 51 and the second recess 52 are formed in the mounting substrate 2, and the ground bump 34 and the RF bump 35 protruding from one main surface 311 of the main body portion 31 are provided on the power amplifier 3. Thus, the unevenness of the first main surface 21 of the mounting substrate 2 on which the power amplifier 3 is disposed can be reduced.

[0100] In the high-frequency module 1 according to Embodiment 1, the first recess 51 and the second recess 52 are present in the mounting substrate 2. Thus, the amount of self-alignment action generated when the solder of the ground bump 34 and the plurality of RF bumps 35 melts can be limited within the first recess 51 and the second recess 52, and thus the mountability of the power amplifier 3 to the mounting substrate 2 can be improved.

[0101] In the high-frequency module 1 according to Embodiment 1, the first recess 51 and the second recess 52 are formed in the mounting substrate 2. Thus, compared with the case where the first recess 51 and the second recess 52 are not formed, the thickness of the mounting substrate 2 can be increased while maintaining the height of the high-frequency module 1, and thus the strength of the mounting substrate 2 can be improved.

[0102] In the communication device 8 according to Embodiment 1, in the high-frequency module 1, the ground bump 34 of the power amplifier 3 is disposed in the first recess 51 of the mounting substrate 2. Thus, the high-frequency module 1 can be made low-profile.

[0103] (5) Modification

[0104] Next, a modification of Embodiment 1 will be described.

[0105] (5.1) Modification 1

[0106] The high-frequency module 1 according to Modification 1 of Embodiment 1 includes a mounting substrate 2, a power amplifier 3, a resin layer 41, a plurality of external connection terminals (not shown), and a shielding layer (not shown).

[0107] The shielding layer covers at least a part of the resin layer 41 and the mounting substrate 2. More specifically, the shielding layer covers one main surface and the outer peripheral surface of the resin layer 41 and the outer peripheral surface of the mounting substrate 2. One main surface of the resin layer 41 is the main surface of the resin layer 41 on the side opposite to the mounting substrate 2 side.

[0108] The shielding layer has conductivity. More specifically, the shielding layer has a multilayer structure formed by laminating a plurality of metal layers. The metal layer contains one or more metals. In addition, the shielding layer is not limited to the above multilayer structure and may also be a single metal layer.

[0109] The shielding layer is provided, for example, for the purpose of electromagnetic shielding inside and outside the high-frequency module 1. The shielding layer is in contact with at least a part of the ground layer of the mounting substrate 2. Thereby, the potential of the shielding layer can be made the same as the potential of the ground layer.

[0110] The shielding layer covers at least a part of the main surface of the power amplifier 3. The shielding layer may also be connected to the main surface of the power amplifier 3 by contact, for example.

[0111] (5.2) Variant Example 2

[0112] In the high-frequency module 1 according to Variant Example 2 of Embodiment 1, the distance L1 (see Figure 1 ) between the main body portion 31 of the power amplifier 3 and the mounting substrate 2 is smaller than the diameter of the filler contained in the resin layer 41.

[0113] According to the high-frequency module 1 according to Variant Example 2 of Embodiment 1, further downsizing of the high-frequency module 1 can be achieved.

[0114] (5.3) Variant Example 3

[0115] In the high-frequency module 1 according to Variant Example 3 of Embodiment 1, the resin layer 41 does not contain a filler. The resin layer 41 contains, for example, only resin without a filler.

[0116] In the high-frequency module 1 according to each of the above variant examples, the same effects as those of the high-frequency module 1 according to Embodiment 1 are also achieved.

[0117] (Embodiment 2)

[0118] The high-frequency module 1 according to Embodiment 2 is different from the high-frequency module 1 according to Embodiment 1 (see Figure 1 ) in the following aspect: As Figure 5 shown, the first recess 51 of the mounting substrate 2 is continuous with a plurality of second recesses 52. In addition, for the high-frequency module 1 according to Embodiment 2, the same structural elements as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and the description thereof is omitted.

[0119] (1) Structure

[0120] In the mounting substrate 2 of Embodiment 2, as Figure 5 shown, the first recess 51 is continuous with a plurality of second recesses 52.

[0121] In a state where the first recess 51 is continuous with the plurality of second recesses 52, the depth of the first recess 51 is deeper than the depth of each second recess 52. That is, a height difference is formed near the boundary between the first recess 51 and each second recess 52.

[0122] In addition, regarding the mounting substrate 2 of Embodiment 2, the same structures and functions as those of the mounting substrate 2 of Embodiment 1 (refer to Figure 1 ) are omitted from description.

[0123] (2) Effects

[0124] In the high-frequency module 1 according to Embodiment 2, in the mounting substrate 2, the first recess 51 is continuous with the plurality of second recesses 52. Thus, there is no need to form a wall between the first recess 51 and each second recess 52, and therefore, the first recess 51 and the plurality of second recesses 52 can be easily formed.

[0125] In the high-frequency module 1 according to Embodiment 2, in the mounting substrate 2, the first recess 51 is continuous with the plurality of second recesses 52. Thus, even when the distance between two electrodes 32 and 33 adjacent to each other in the planar direction (for example, the first direction D21 and the second direction D22) of one main surface 311 of the power amplifier 3 is short, that is, even when the distance between the ground bump 34 and the RF bump 35 is short, the first recess 51 and each second recess 52 can be formed.

[0126] (3) Modification Example

[0127] Next, a modification example of Embodiment 2 will be described.

[0128] The high-frequency module 1 according to the modification example of Embodiment 2, like the high-frequency module 1 according to Modification Example 1 of Embodiment 1, further includes a shielding layer (not shown).

[0129] In the high-frequency module 1 according to the above modification example, the same effects as those of the high-frequency module 1 according to Embodiment 2 are also achieved.

[0130] (Embodiment 3)

[0131] The high-frequency module 1 according to Embodiment 3 is different from the high-frequency module 1 according to Embodiment 1 (refer to Figure 1 ) in the following aspect: As Figure 6 shown, a plurality of second recesses 52 of the mounting substrate 2 (refer to Figure 1)Does not exist. In addition, regarding the high-frequency module 1 related to Embodiment 3, the same structural elements as those of the high-frequency module 1 related to Embodiment 1 are marked with the same reference numerals and their description is omitted.

[0132] (1) Structure

[0133] In the mounting substrate 2 of Embodiment 3, as Figure 6 shown, a plurality of second recesses 52 are not provided (see Figure 1 ).

[0134] A plurality of second electrodes 62 of Embodiment 3 are arranged in a portion of the first main surface 21 of the mounting substrate 2 where no recess is formed.

[0135] A plurality of RF bumps 35 are arranged on the plurality of second electrodes 62. That is, the plurality of RF bumps 35 are arranged in a portion of the first main surface 21 of the mounting substrate 2 where no recess is formed.

[0136] In addition, regarding the mounting substrate 2 of Embodiment 3, the description of the same structure and function as those of the mounting substrate 2 of Embodiment 1 (see Figure 1 ) is omitted.

[0137] (2) Effect

[0138] In the high-frequency module 1 related to Embodiment 3, a plurality of second recesses 52 are not provided. Thus, the process of forming recesses in the mounting substrate 2 can be simplified.

[0139] (3) Modification

[0140] Next, a modification of Embodiment 3 will be described.

[0141] The high-frequency module 1 related to the modification of Embodiment 3, similar to the high-frequency module 1 related to the modification of Embodiment 1, further includes a shielding layer (not shown).

[0142] In the high-frequency module 1 related to the above modification, the same effect as that of the high-frequency module 1 related to Embodiment 3 is also achieved.

[0143] (Embodiment 4)

[0144] The high-frequency module 1 related to Embodiment 4 is different from the high-frequency module 1 related to Embodiment 1 (see Figure 1 ) in the following aspect: as Figure 7 shown, the side surfaces 512 of the first recess 51 and the side surfaces 522 of the second recess 52 of the mounting substrate 2 are curved surfaces. In addition, regarding the high-frequency module 1 related to Embodiment 4, the same structural elements as those of the high-frequency module 1 related to Embodiment 1 are marked with the same reference numerals and their description is omitted.

[0145] (1) Structure

[0146] In the mounting substrate 2 of Embodiment 4, the side surface 512 of the first recess 51 is a curved surface when viewed from above in the thickness direction D1 of the mounting substrate 2.

[0147] In addition, in the mounting substrate 2 of Embodiment 4, as Figure 7 shown, the side surface 522 of the second recess 52 is a curved surface when viewed from above in the thickness direction D1 of the mounting substrate 2.

[0148] Furthermore, regarding the mounting substrate 2 of Embodiment 4, the same structures and functions as those of the mounting substrate 2 of Embodiment 1 (refer to Figure 1 ) are omitted from description.

[0149] (2) Effects

[0150] In the high-frequency module 1 according to Embodiment 4, the side surface 512 of the first recess 51 is a curved surface when viewed from above in the thickness direction D1 of the mounting substrate 2. Thus, the shape of the first recess 51 can be made close to the shape of the ground bump 34. Therefore, when the power amplifier 3 is arranged on the mounting substrate 2, the self-alignment amount of the solder can be suppressed within the range of the first recess 51. As a result, the mountability of the power amplifier 3 to the mounting substrate 2 can be improved. That is, the mounting deviation of the power amplifier 3 can be reduced.

[0151] In the high-frequency module 1 according to Embodiment 4, the side surface 522 of the second recess 52 is a curved surface when viewed from above in the thickness direction D1 of the mounting substrate 2. Thus, the shape of the second recess 52 can be made close to the shape of the RF bump 35. Therefore, when the power amplifier 3 is arranged on the mounting substrate 2, the self-alignment amount of the solder can be suppressed within the range of the second recess 52. As a result, the mountability of the power amplifier 3 to the mounting substrate 2 can be improved. That is, the mounting deviation of the power amplifier 3 can be reduced.

[0152] (3) Modification Examples

[0153] Hereinafter, modification examples of Embodiment 4 will be described.

[0154] (3.1) Modification Example 1

[0155] In the high-frequency module 1 according to Modification Example 1 of Embodiment 4, among the side surface 512 of the first recess 51 and the side surfaces 522 of the plurality of second recesses 52 of the mounting substrate 2, only the side surface 512 of the first recess 51 is a curved surface.

[0156] In the high-frequency module 1 according to Modification Example 1 of Embodiment 4, the mountability of the power amplifier 3 to the mounting substrate 2 can also be improved.

[0157] (3.2) Modification Example 2

[0158] In the high-frequency module 1 according to the second modification of Embodiment 4, among the side surfaces 512 of the first recess 51 and the side surfaces 522 of the plurality of second recesses 52 of the mounting substrate 2, only the side surfaces 522 of the plurality of second recesses 52 are curved surfaces. Further, it may be that not all of the plurality of second recesses 52 but the side surfaces 522 of some of the plurality of second recesses 52 are curved surfaces.

[0159] In the high-frequency module 1 according to the second modification of Embodiment 4, the mountability of the power amplifier 3 to the mounting substrate 2 can also be improved.

[0160] In short, it is sufficient that at least one of the side surfaces 512 and 522 of the first recess 51 and the plurality of second recesses 52 of the mounting substrate 2 is a curved surface when viewed from above in the thickness direction D1 of the mounting substrate 2.

[0161] In the high-frequency module 1 according to each of the above modifications, the same effects as those of the high-frequency module 1 according to Embodiment 4 are also achieved.

[0162] (Embodiment 5)

[0163] The high-frequency module 1 according to Embodiment 5 is different from the high-frequency module 1 according to Embodiment 1 (refer to Figure 1 ) in the following respect: as shown in A of Figure 8 , side electrodes 63 are formed on the side surfaces 512 of the first recess 51 and the side surfaces 522 of the plurality of second recesses 52. Further, for the high-frequency module 1 according to Embodiment 5, the same structural elements as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and the description thereof is omitted.

[0164] (1) Structure

[0165] As shown in A of Figure 8 , the mounting substrate 2 of Embodiment 5 further includes side electrodes 63. The side electrodes 63 are formed on the side surfaces 512 of the first recess 51. In addition, the side electrodes 63 are formed on the side surfaces 522 of the second recesses 52. Further, for the mounting substrate 2 of Embodiment 5, the description of the same structures and functions as those of the mounting substrate 2 of Embodiment 1 (refer to Figure 1 ) is omitted.

[0166] (2) Effect

[0167] In the high-frequency module 1 according to Embodiment 5, a first electrode 61 is formed on the bottom surface 511 of the first recess 51, and a side electrode 63 is formed on the side surface 512 of the first recess 51. Thereby, the contact area between the ground bump 34 of the power amplifier 3 and the electrodes (the first electrode 61 and the side electrode 63) in the first recess 51 can be increased, and thus the bonding strength between the ground bump 34 and the electrodes in the first recess 51 can be improved. As a result, the mountability of the power amplifier 3 to the mounting substrate 2 can be improved.

[0168] In the high-frequency module 1 according to Embodiment 5, a side electrode 63 is formed on the side surface 512 of the first recess 51. Thereby, wiring can be extended from the side surface 512 of the first recess 51, and thus the degree of freedom of wiring can be improved.

[0169] In the high-frequency module 1 according to Embodiment 5, a second electrode 62 is formed on the bottom surface 521 of the second recess 52, and a side electrode 63 is formed on the side surface 522 of the second recess 52. Thereby, the contact area between the RF bump 35 of the power amplifier 3 and the electrodes (the second electrode 62 and the side electrode 63) in the second recess 52 can be increased, and thus the bonding strength between the RF bump 35 of the power amplifier 3 and the electrodes in the second recess 52 can be improved. As a result, the mountability of the power amplifier 3 to the mounting substrate 2 can be improved.

[0170] In the high-frequency module 1 according to Embodiment 5, a side electrode 63 is formed on the side surface 522 of the second recess 52. Thereby, wiring can be extended from the side surface 522 of the second recess 52, and thus the degree of freedom of wiring can be improved.

[0171] (3) Variation

[0172] Next, a variation of Embodiment 5 will be described.

[0173] (3.1) Variation 1

[0174] In the high-frequency module 1 according to Variation 1 of Embodiment 5, as Figure 8 shown in B of, the mounting substrate 2 has a wiring pattern conductor 65. The wiring pattern conductor 65 is provided on the first main surface 21 of the mounting substrate 2 so as to be continuous with the side electrode 63.

[0175] In the high-frequency module 1 according to Variation 1 of Embodiment 5, a side electrode 63 is formed on at least one of the side surfaces 512 and 522 of the first recess 51 and the second recess 52. Thereby, wiring can be extended from the side surfaces 512 and 522 of the recesses (the first recess 51 and the second recess 52), and thus the degree of freedom of wiring can be improved.

[0176] (3.2) Variation 2

[0177] In the high-frequency module 1 according to the second modification of Embodiment 5, as shown in Figure 8 C of, the mounting substrate 2 has a via conductor 66 and a plurality of wiring pattern conductors 671, 672.

[0178] The via conductor 66 connects the first electrode 61 to the wiring pattern conductor 671. The wiring pattern conductor 672 is connected to the side electrode 63. The wiring pattern conductor 672 extends from the side electrode 63 in a direction orthogonal to the thickness direction D1 of the mounting substrate 2. In addition, the via conductor 66 may also be a conductor that connects the second electrode 62 to the wiring pattern conductor 671.

[0179] In the high-frequency module 1 according to the second modification of Embodiment 5, side electrodes 63 are formed on the side surfaces 512, 522 of at least one of the first recess 51 and the second recess 52. Thus, wiring can be extended from the side surfaces 512, 522 of the recesses (the first recess 51, the second recess 52), and therefore the degree of freedom of wiring can be improved.

[0180] (3.3) Second modification

[0181] In the high-frequency module 1 according to the third modification of Embodiment 5, side electrodes 63 are formed only on the side surfaces 512 of the plurality of first recesses 51 and the side surfaces 522 of the plurality of second recesses 52. In addition, it may be that side electrodes 63 are formed not on all of the plurality of first recesses 51 but on the side surfaces 512 of a part of the plurality of first recesses 51.

[0182] In the high-frequency module 1 according to the third modification of Embodiment 5, the degree of freedom of wiring can also be improved.

[0183] (3.4) Fourth modification

[0184] In the high-frequency module 1 according to the fourth modification of Embodiment 5, side electrodes 63 are formed only on the side surfaces 522 of the plurality of second recesses 52 and the side surfaces 512 of the plurality of first recesses 51. In addition, it may be that side electrodes 63 are formed not on all of the plurality of second recesses 52 but on the side surfaces 522 of a part of the plurality of second recesses 52.

[0185] In the high-frequency module 1 according to the fourth modification of Embodiment 5, the degree of freedom of wiring can also be improved.

[0186] In short, it is sufficient that the mounting substrate 2 has side electrodes 63 formed on the side surfaces 512, 522 of at least one of the first recess 51 and the second recess 52.

[0187] In the high-frequency module 1 according to each of the above-described modified examples, the same effects as those of the high-frequency module 1 according to the fifth embodiment are also achieved.

[0188] (Embodiment 6)

[0189] The high-frequency module 1 according to Embodiment 6 is different from the high-frequency module 1 according to Embodiment 1 (refer to Figure 1 ) in the following aspects: As Figure 9 shown, wiring pattern conductors 68 are formed in the first recess 51 and the plurality of second recesses 52 of the mounting substrate 2. In addition, for the high-frequency module 1 according to Embodiment 6, the same structural elements as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals and their description is omitted.

[0190] (1) Structure

[0191] As Figure 9 shown, the mounting substrate 2 of Embodiment 6 has a plurality of wiring pattern conductors 68. The wiring pattern conductors 68 are formed in the first recess 51. More specifically, the wiring pattern conductors 68 are formed on the bottom surface 511 of the first recess 51. In addition, as Figure 9 shown, the wiring pattern conductors 68 are formed in each of the plurality of second recesses 52 of the plurality of second recesses 52. More specifically, the wiring pattern conductors 68 are formed on the bottom surface 521 of each of the plurality of second recesses 52. In addition, for the mounting substrate 2 of Embodiment 6, the same structures and functions as those of the mounting substrate 2 of Embodiment 1 (refer to Figure 1 ) are omitted from description.

[0192] (2) Effects

[0193] In the high-frequency module 1 according to Embodiment 6, the wiring pattern conductors 68 are formed in at least one of the first recess 51 and the plurality of second recesses 52. Thereby, the degree of freedom of wiring can be increased.

[0194] (3) Modified Examples

[0195] Next, modified examples of Embodiment 6 will be described.

[0196] (3.1) Modified Example 1

[0197] In the high-frequency module 1 according to Modified Example 1 of Embodiment 6, the wiring pattern conductors 68 are formed only in the plurality of first recesses 51 among the plurality of first recesses 51 and the plurality of second recesses 52 of the mounting substrate 2. In addition, it may be that the wiring pattern conductors 68 are formed not in all of the plurality of first recesses 51 but in a part of the plurality of first recesses 51.

[0198] In the high-frequency module 1 according to the first modification of Embodiment 6, the degree of freedom in wiring can also be increased.

[0199] (3.2) Second modification

[0200] In the high-frequency module 1 according to the second modification of Embodiment 6, wiring pattern conductors 68 are formed only in the plurality of second recesses 52 among the plurality of first recesses 51 and the plurality of second recesses 52 of the mounting substrate 2. Alternatively, the wiring pattern conductors 68 may be formed not in all of the plurality of second recesses 52 but in a part of the plurality of second recesses 52.

[0201] In the high-frequency module 1 according to the second modification of Embodiment 6, the degree of freedom in wiring can also be increased.

[0202] In short, it is sufficient that the mounting substrate 2 has the wiring pattern conductors 68 in at least one of the first recess 51 and the second recess 52.

[0203] (3.3) Third modification

[0204] In the high-frequency module 1 according to the third modification of Embodiment 6, the number of the wiring pattern conductors 68 provided in the first recess 51 is not limited to two, and may be one, or may be three or more. The number of the wiring pattern conductors 68 provided in the plurality of second recesses 52 is not limited to two, and may be one, or may be three or more.

[0205] In the high-frequency module 1 according to the above modifications, the same effects as those of the high-frequency module 1 according to Embodiment 6 are also achieved.

[0206] (Embodiment 7)

[0207] The high-frequency module 1 according to Embodiment 7 is different from the high-frequency module 1 according to Embodiment 1 (see Figure 1 ) in the following respect: as Figure 10 shown, it has a double-sided mounting structure. In addition, for the structural elements of the high-frequency module 1 according to Embodiment 7 that are the same as those of the high-frequency module 1 according to Embodiment 1, the same reference numerals are used and the description thereof is omitted.

[0208] (1) Structure

[0209] As Figure 10 shown, the high-frequency module 1 according to Embodiment 7 includes a mounting substrate 2, a power amplifier 3, electronic components 7, a plurality of resin layers 41 and 42, and a plurality of external connection terminals (not shown).

[0210] (1.1) Mounting substrate

[0211] As Figure 10As shown, the mounting substrate 2 of Embodiment 7 has a first main surface 21 and a second main surface 22. The mounting substrate 2 is a double-sided mounting substrate on which electronic components are mounted on the first main surface 21 and the second main surface 22, respectively.

[0212] (1.2) Electronic component

[0213] As Figure 10 shown, the electronic component 7 is disposed on the second main surface 22 of the mounting substrate 2. The electronic component 7 is, for example, an IC (Integrated Circuit) component. In addition, it may be that a part of the electronic component 7 is disposed on the second main surface 22 of the mounting substrate 2, and the remaining part of the electronic component 7 is mounted inside the mounting substrate 2. In short, the electronic component 7 is located on the side closer to the second main surface 22 of the mounting substrate 2 than to the first main surface 21, and at least has a part mounted on the second main surface 22.

[0214] The electronic component 7 has a main body portion 71, a plurality of electrodes 72, and a plurality of bumps 73. The plurality of electrodes 72 of the electronic component 7 are connected to a plurality of third electrodes 69 provided on the second main surface 22 of the mounting substrate 2 via the plurality of bumps 73, whereby the electronic component 7 is disposed on the second main surface 22 of the mounting substrate 2.

[0215] The main body portion 71 has a functional portion. The main body portion 71 is disposed on the mounting substrate 2 such that one main surface 711 of the main body portion 71 faces the mounting substrate 2 in the thickness direction D1 of the mounting substrate 2. More specifically, in a state where the electronic component 7 is disposed on the mounting substrate 2, one main surface 711 of the main body portion 71 faces the second main surface 22 of the mounting substrate 2.

[0216] The plurality of electrodes 72 are formed on one main surface 711 of the main body portion 71. The plurality of electrodes 72 are provided, for example, in a separated manner on one main surface 711 of the main body portion 71.

[0217] The plurality of bumps 73 are bumps for connecting the plurality of electrodes 72 to the conductive layer of the mounting substrate 2. The plurality of bumps 73 are disposed on the plurality of electrodes 72. Each bump 73 is formed in a circular shape, for example. Each bump 73 is formed of solder, for example.

[0218] When the electronic component 7 is an IC component, the electronic component 7 includes, for example, a low-noise amplifier and a switch. When viewed from the thickness direction D1 of the mounting substrate 2, the outer peripheral shape of the electronic component 7 is a quadrilateral shape.

[0219] The low-noise amplifier has an input terminal and an output terminal. The low-noise amplifier amplifies the received signal input to the input terminal and outputs it from the output terminal. The input terminal of the low-noise amplifier is connected to the common terminal of the switch via an input matching circuit. The output terminal of the low-noise amplifier is connected to the signal output terminal. Accordingly, the output terminal of the low-noise amplifier is connected to the signal processing circuit 82 via the signal output terminal.

[0220] The switch has a common terminal and a plurality of selection terminals. The switch is controlled by a controller (not shown). The switch switches the connection state between the common terminal and the plurality of selection terminals according to a control signal from the controller.

[0221] As an example of the switch included in the IC component, there are a first switch, a second switch, and a third switch.

[0222] The first switch is an antenna switch connected to an antenna terminal (not shown). The common terminal is connected to the antenna terminal. An antenna (not shown) is connected to the antenna terminal. The selection terminals are connected to, for example, a transmit filter (not shown) or a receive filter (not shown). The first switch is a switch capable of connecting at least one or more of the plurality of selection terminals to the common terminal. The first switch is, for example, a switch capable of performing one-to-one connection and one-to-many connection.

[0223] The second switch is, for example, a band selection switch for switching signal paths for a plurality of transmission signals having different communication bands. The second switch has a common terminal and a plurality of selection terminals. The common terminal is connected to the power amplifier 3. The selection terminals are connected to the transmit filter. The second switch is a switch capable of connecting at least one or more of the plurality of selection terminals to the common terminal. The second switch is, for example, a switch capable of performing one-to-one connection and one-to-many connection.

[0224] The third switch has a common terminal and a plurality of selection terminals. The common terminal is connected to the low-noise amplifier via an input matching circuit. The selection terminals are connected to the receive filter. The third switch is a switch capable of connecting at least one or more of the plurality of selection terminals to the common terminal. The third switch is, for example, a switch capable of performing one-to-one connection and one-to-many connection.

[0225] (1.3) Configuration relationship of the mounting substrate, power amplifier, and electronic components

[0226] As Figure 10 shown, the mounting substrate 2 has a first recess 51, a plurality of second recesses 52, and a plurality of third recesses 53. The plurality of third recesses 53 are formed on the second main surface 22 of the mounting substrate 2. Each of the plurality of third recesses 53 has a bottom surface 531 and a side surface 532. Similar to the first recess 51 and the plurality of second recesses 52 of the first embodiment (refer to Figure 1)Similarly, the first concave portion 51 and the plurality of second concave portions 52 are formed on the first main surface 21 of the mounting substrate 2.

[0227] The mounting substrate 2 has a first electrode 61, a plurality of second electrodes 62, and a plurality of third electrodes 69. The plurality of third electrodes 69 are disposed on the bottom surface 531 of the plurality of third concave portions 53. Similar to the first electrode 61 and the plurality of second electrodes 62 of the first embodiment (refer to Figure 1 ) the first electrode 61 is disposed on the bottom surface 511 of the first concave portion 51, and the plurality of second electrodes 62 are disposed on the bottom surfaces 521 of the plurality of second concave portions 52.

[0228] The plurality of bumps 73 of the electronic component 7 are disposed in the plurality of third concave portions 53 of the mounting substrate 2. More specifically, for each of the plurality of bumps 73, the bump 73 is disposed in the third concave portion 53 such that at least a part of the bump 73 is received in the third concave portion 53.

[0229] By disposing the plurality of bumps 73 of the electronic component 7 in the plurality of third concave portions 53 of the mounting substrate 2, the height of the electronic component 7 from the surface of the second main surface 22 of the mounting substrate 2 where the plurality of third concave portions 53 are not formed can be made low, and thus the high-frequency module 1 can be made low-profile.

[0230] In the mounting substrate 2 of the seventh embodiment, when viewed from above in the thickness direction D1 of the mounting substrate 2, at least one of the plurality of third concave portions 53 overlaps with the second concave portion 52. In Figure 10 In the example, when viewed from above in the thickness direction D1 of the mounting substrate 2, the central third concave portion 53 among the three third concave portions 53 overlaps with the left second concave portion 52 among the two second concave portions 52.

[0231] Further, in the mounting substrate 2 of the seventh embodiment, when viewed from above in the thickness direction D1 of the mounting substrate 2, at least one of the plurality of third concave portions 53 overlaps with the first concave portion 51. In Figure 10 In the example, when viewed from above in the thickness direction D1 of the mounting substrate 2, the rightmost third concave portion 53 among the three third concave portions 53 overlaps with the first concave portion 51.

[0232] (1.4) Resin layer

[0233] As Figure 10 shown, the resin layer 41 is disposed on the first main surface 21 of the mounting substrate 2. The resin layer 41 is in contact with the first main surface 21 of the mounting substrate 2 and covers at least a part of the power amplifier 3. Thereby, the mounting substrate 2 and the power amplifier 3 can be protected.

[0234] The resin layer 41 contains a resin and a filler (not shown). The resin is, for example, an epoxy resin. In the high-frequency module 1, the distance L1 between the main body 31 of the power amplifier 3 and the mounting substrate 2 is larger than the diameter of the filler contained in the resin layer 41. As a result, the resin layer 41 enters the periphery of the bumps (ground bump 34, RF bump 35) of the power amplifier 3. Therefore, when the high-frequency module 1 is mounted on the motherboard, solder splash can be prevented. As a result, the connection reliability of the power amplifier 3 can be improved.

[0235] As Figure 10 shown, the resin layer 42 is disposed on the second main surface 22 of the mounting substrate 2. The resin layer 42 covers at least a part of each of a plurality of electronic components (including the electronic component 7) disposed on the second main surface 22 of the mounting substrate 2. More specifically, the resin layer 42 covers the outer peripheral surface of each electronic component and the main surface of each electronic component on the side opposite to the mounting substrate 2 side. The resin layer 42 contains a resin. The resin is, for example, an epoxy resin. In addition, the resin layer 42 may contain a filler in addition to the resin. The material of the resin layer 42 may be the same as or different from the material of the resin layer 41.

[0236] As Figure 10 shown, the resin layer 42 is disposed on the second main surface 22 of the mounting substrate 2. The resin layer 42 is in contact with the second main surface 22 of the mounting substrate 2 and covers at least a part of the electronic component 7. Thereby, the mounting substrate 2 and the electronic component 7 can be protected.

[0237] The resin layer 42 contains a resin and a filler (not shown). The resin is, for example, an epoxy resin. In the high-frequency module 1, the distance L2 between the main body 71 of the electronic component 7 and the mounting substrate 2 is larger than the diameter of the filler contained in the resin layer 42. As a result, the resin layer 42 enters the periphery of the bump 73 of the electronic component 7. Therefore, when the high-frequency module 1 is mounted on the motherboard, solder splash can be prevented. As a result, the connection reliability of the electronic component 7 can be improved.

[0238] (1.5) External connection terminals

[0239] A plurality of external connection terminals (not shown) are, for example, disposed on the second main surface 22 of the mounting substrate 2. The plurality of external connection terminals are arranged on the second main surface 22 of the mounting substrate 2 at intervals from each other.

[0240] The plurality of external connection terminals are each a columnar (for example, cylindrical) conductive member. The material of the plurality of external connection terminals is, for example, a metal (for example, copper, copper alloy, etc.). The front end portion of each of the plurality of external connection terminals may also include a gold plating layer, for example.

[0241] (2) Effects

[0242] In the high-frequency module 1 according to Embodiment 7, an electronic component 7 is disposed on the second main surface 22 of the mounting substrate 2. Thereby, the mounting efficiency of the high-frequency module 1 can be improved.

[0243] In the high-frequency module 1 according to Embodiment 7, the bumps 73 of the electronic component 7 are disposed in the third recess 53 of the mounting substrate 2. Thereby, recesses (first recess 51, second recess 52, third recess 53) are formed on both the first main surface 21 side and the second main surface 22 side of the mounting substrate 2, and bumps (ground bumps 34, RF bumps 35, bumps 73 of the electronic component 7) are disposed in the recesses. Therefore, the high-frequency module 1 can be further miniaturized.

[0244] In the high-frequency module 1 according to Embodiment 7, the first recess 51, the second recess 52, and the third recess 53 are formed in the mounting substrate 2. Thereby, compared with the case where the first recess 51, the second recess 52, and the third recess 53 are not formed, the distance between the RF bumps 35 of the power amplifier 3 and the bumps 73 of the electronic component 7 can be shortened, and thus the wiring length can be shortened. As a result, the loss of the wiring can be reduced.

[0245] In the high-frequency module 1 according to Embodiment 7, the third recess 53 overlaps with the second recess 52 in the thickness direction D1 of the mounting substrate 2. Thereby, the distance between the RF bumps 35 of the power amplifier 3 and the bumps 73 of the electronic component 7 can be made shorter. Thereby, the loss of the wiring can be further reduced.

[0246] In the high-frequency module 1 according to Embodiment 7, the first recess 51, the second recess 52, and the third recess 53 are formed in the mounting substrate 2. Thereby, compared with the case where the first recess 51, the second recess 52, and the third recess 53 are not formed in the mounting substrate 2, the thickness of the mounting substrate 2 can be increased while maintaining the height of the high-frequency module 1. Therefore, the strength of the mounting substrate 2 can be improved.

[0247] (3) Variation

[0248] Next, a variation of Embodiment 7 will be described.

[0249] (3.1) Variation 1

[0250] The high-frequency module 1 according to Variation 1 of Embodiment 7 includes a mounting substrate 2, a power amplifier 3, an electronic component 7, a plurality of resin layers 41 and 42, a plurality of external connection terminals (not shown), and a shielding layer (not shown).

[0251] The shielding layer covers at least a part of resin layers 41 and 42 and the mounting substrate 2. More specifically, the shielding layer covers one main surface and the outer peripheral surface of resin layer 41, the outer peripheral surface of mounting substrate 2, and the outer peripheral surface of resin layer 42. One main surface of resin layer 41 is the main surface of resin layer 41 on the side opposite to the mounting substrate 2 side. In addition, regarding the shielding layer of Modification 1 of Embodiment 7, the description of the same structure and function as the shielding layer of Modification 1 of Embodiment 1 is omitted.

[0252] (3.2) Modification 2

[0253] In the high-frequency module 1 according to Modification 2 of Embodiment 7, the electronic component 7 is not an IC component including a low-noise amplifier and a switch, but is a component other than the IC component. For example, the electronic component 7 may also be only a low-noise amplifier, or may be only a switch.

[0254] In the high-frequency module 1 according to each of the above modifications, the same effects as those of the high-frequency module 1 according to Embodiment 7 are also achieved.

[0255] The embodiments and modifications described above are only a part of the various embodiments and modifications of the present invention. In addition, the embodiments and modifications only need to be able to achieve the object of the present invention, and various changes can be made according to design and the like.

[0256] (Embodiment)

[0257] This specification discloses the following embodiments.

[0258] The high-frequency module (1) according to the first embodiment includes a mounting substrate (2) and a power amplifier (3). The mounting substrate (2) has a first main surface (21) and a second main surface (22). The first main surface (21) and the second main surface (22) face each other. The power amplifier (3) is disposed on the first main surface (21) of the mounting substrate (2), and has an RF bump (35) and a ground bump (34). The height of the ground bump (34) is higher than the height of the RF bump (35). The mounting substrate (2) has a first recess (51). The first recess (51) is formed on the first main surface (21) of the mounting substrate (2). The ground bump (34) is disposed in the first recess (51) of the mounting substrate (2).

[0259] According to the high-frequency module (1) according to the first embodiment, the high-frequency module (1) can be made low-profile.

[0260] According to the high-frequency module (1) according to the first embodiment, compared with the case where the first recess (51) is not formed, the distance between the power amplifier (3) and the wiring conductors or wiring elements built in the mounting substrate (2) can be shortened.

[0261] In the high-frequency module (1) according to the second mode, in accordance with the first mode, the mounting substrate (2) further has a second recess (52). The second recess (52) is formed on the first main surface (21) of the mounting substrate (2). The RF bumps (35) of the power amplifier (3) are disposed in the second recess (52) of the mounting substrate (2).

[0262] According to the high-frequency module (1) according to the second mode, the height of the power amplifier (3) from the surface of the first main surface (21) of the mounting substrate (2) where neither the first recess (51) nor the second recess (52) is formed can be made low, so that the high-frequency module (1) can be made low-profile.

[0263] According to the high-frequency module (1) according to the second mode, the distance between the power amplifier (3) and the wiring conductors or wiring elements built in the mounting substrate (2) can be made shorter than in the case where the second recess (52) is not formed.

[0264] In the high-frequency module (1) according to the third mode, in accordance with the second mode, the first recess (51) and the second recess (52) are continuous.

[0265] According to the high-frequency module (1) according to the third mode, there is no need to form a wall between the first recess (51) and the second recess (52), so that the first recess (51) and the second recess (52) can be easily formed.

[0266] According to the high-frequency module (1) according to the third mode, even when the distance between two adjacent electrodes (32, 33) of the power amplifier (3) is short, that is, even when the distance between the ground bumps (34) and the RF bumps (35) is short, the first recess (51) and the second recess (52) can be formed.

[0267] In the high-frequency module (1) according to the fourth mode, in accordance with the second mode, the side surface (522) of the second recess (52) of the mounting substrate (2) is a curved surface when viewed from above in the thickness direction (D1) of the mounting substrate (2).

[0268] According to the high-frequency module (1) according to the fourth mode, the shape of the second recess (52) can be made close to the shape of the RF bumps (35). Therefore, when the power amplifier (3) is disposed on the mounting substrate (2), the self-alignment amount of the solder can be suppressed within the range of the second recess (52). As a result, the mountability of the power amplifier (3) to the mounting substrate (2) can be improved. That is, the mounting deviation of the power amplifier (3) can be reduced.

[0269] In the high-frequency module (1) according to the fifth mode, according to the second mode, the mounting substrate (2) has a wiring pattern conductor (68). The wiring pattern conductor (68) is formed in at least one of the first recess (51) and the second recess (52).

[0270] According to the high-frequency module (1) according to the fifth mode, the degree of freedom of wiring can be improved.

[0271] In the high-frequency module (1) according to the sixth mode, according to the second mode, the mounting substrate (2) has a side electrode (63). The side electrode (63) is formed on the side surface (522) of the second recess (52).

[0272] According to the high-frequency module (1) according to the sixth mode, the contact area between the RF bump (35) of the power amplifier (3) and the electrode in the second recess (52) can be made large, so that the bonding strength between the RF bump (35) of the power amplifier (3) and the electrode in the second recess (52) can be improved. As a result, the mountability of the power amplifier (3) to the mounting substrate (2) can be improved.

[0273] According to the high-frequency module (1) according to the sixth mode, wiring can be extended from the side surface (522) of the second recess (52), so that the degree of freedom of wiring can be improved.

[0274] In the high-frequency module (1) according to the seventh mode, according to the first mode, the RF bump (35) of the power amplifier (3) is arranged in a portion of the first main surface (21) of the mounting substrate (2) where no recess is formed.

[0275] According to the high-frequency module (1) according to the seventh mode, the process of forming a recess in the mounting substrate (2) can be simplified.

[0276] In the high-frequency module (1) according to the eighth mode, according to any one of the first mode to the seventh mode, the mounting substrate (2) has a via conductor (66). The via conductor (66) is connected to the first recess (51) in which the ground bump (34) is arranged.

[0277] According to the high-frequency module (1) according to the eighth mode, compared with the case where the first recess (51) is not formed, the length of the via conductor (66) can be made short. Therefore, for example, the distance between the ground bump (34) and the ground layer (64) of the mounting substrate (2) can be made short.

[0278] In the high-frequency module (1) according to the ninth mode, according to any one of the first mode to the eighth mode, the side surface (512) of the first recess (51) of the mounting substrate (2) is a curved surface when viewed from the thickness direction (D1) of the mounting substrate (2).

[0279] According to the high-frequency module (1) related to the ninth aspect, the shape of the first recess (51) can be made close to the shape of the ground bump (34). Therefore, when the power amplifier (3) is arranged on the mounting substrate (2), the self-alignment amount of the solder can be suppressed within the range of the first recess (51). As a result, the mountability of the power amplifier (3) to the mounting substrate (2) can be improved. That is, the mounting deviation of the power amplifier (3) can be reduced.

[0280] In the high-frequency module (1) related to the tenth aspect, according to any one of the first to ninth aspects, the mounting substrate (2) has side electrodes (63). The side electrodes (63) are formed on the side surface (512) of the first recess (51).

[0281] According to the high-frequency module (1) related to the tenth aspect, the contact area between the ground bump (34) of the power amplifier (3) and the electrode within the first recess (51) can be made large. Therefore, the bonding strength between the ground bump (34) and the electrode within the first recess (51) can be improved. As a result, the mountability of the power amplifier (3) to the mounting substrate (2) can be improved.

[0282] According to the high-frequency module (1) related to the tenth aspect, wiring can be extended from the side surface (512) of the first recess (51). Therefore, the degree of freedom of the wiring can be improved.

[0283] According to any one of the third to tenth aspects, the high-frequency module (1) related to the eleventh aspect further includes an electronic component (7). The electronic component (7) is arranged on the second main surface (22) of the mounting substrate (2) and has a bump (73).

[0284] According to the high-frequency module (1) related to the eleventh aspect, the mounting efficiency of the high-frequency module (1) can be improved.

[0285] In the high-frequency module (1) related to the twelfth aspect, according to the eleventh aspect, the mounting substrate (2) further has a third recess (53). The third recess (53) is formed on the second main surface (22). The bump (73) of the electronic component (7) is arranged in the third recess (53) of the mounting substrate (2).

[0286] According to the high-frequency module (1) related to the twelfth aspect, recesses (the first recess 51, the second recess 52, the third recess 53) are formed on both the first main surface (21) side and the second main surface (22) side of the mounting substrate (2), and bumps (the ground bump 34, the RF bump 35, the bump 73 of the electronic component 7) are arranged in the recesses. Therefore, the high-frequency module (1) can be further miniaturized.

[0287] According to the high-frequency module (1) related to the twelfth mode, compared with the case where the first recess (51), the second recess (52), and the third recess (53) are not formed, the distance between the RF bump (35) of the power amplifier (3) and the bump (73) of the electronic component (7) can be shortened, so that the wiring length can be shortened. As a result, the loss of the wiring can be reduced.

[0288] In the high-frequency module (1) related to the thirteenth mode, according to the twelfth mode, the mounting substrate (2) further has a second recess (52). The second recess (52) is formed on the first main surface (21) of the mounting substrate (2). The RF bump (35) of the power amplifier (3) is disposed in the second recess (52) of the mounting substrate (2). When viewed from above in the thickness direction (D1) of the mounting substrate (2), the third recess (53) of the mounting substrate (2) overlaps with the second recess (52) of the mounting substrate (2).

[0289] According to the high-frequency module (1) related to the thirteenth mode, the distance between the RF bump (35) of the power amplifier (3) and the bump (73) of the electronic component (7) can be made shorter. Thereby, the loss of the wiring can be further reduced.

[0290] According to any one of the first mode to the thirteenth mode, the high-frequency module (1) related to the fourteenth mode further includes a resin layer (41). The resin layer (41) is in contact with the first main surface (21) of the mounting substrate (2) and covers at least a part of the power amplifier (3).

[0291] According to the high-frequency module (1) related to the fourteenth mode, the mounting substrate (2) and the power amplifier (3) can be protected.

[0292] In the high-frequency module (1) related to the fifteenth mode, according to the fourteenth mode, the resin layer (41) contains a filler. The distance (L1) between the power amplifier (3) and the mounting substrate (2) is larger than the diameter of the filler contained in the resin layer (41).

[0293] According to the high-frequency module (1) related to the fifteenth mode, the resin layer (41) enters the periphery of the bump of the power amplifier (3). Therefore, when the high-frequency module (1) is mounted on the mother board, solder splash can be prevented. As a result, the connection reliability of the power amplifier (3) can be improved.

[0294] In the high-frequency module (1) related to the sixteenth mode, according to the fourteenth mode, the resin layer (41) contains a filler. The distance (L1) between the power amplifier (3) and the mounting substrate (2) is smaller than the diameter of the filler contained in the resin layer (41).

[0295] According to the high-frequency module (1) related to the sixteenth aspect, the high-frequency module (1) can be further miniaturized in height.

[0296] According to any one of the fourteenth to sixteenth aspects, the high-frequency module (1) related to the seventeenth aspect further includes a shielding layer. The shielding layer covers at least a part of the resin layer (41) and the mounting substrate (2). The mounting substrate (2) has a ground layer (64). The shielding layer is in contact with at least a part of the ground layer (64).

[0297] According to the high-frequency module (1) related to the seventeenth aspect, the potential of the shielding layer can be made the same as the potential of the ground layer (64).

[0298] In the high-frequency module (1) related to the eighteenth aspect, according to any one of the first to seventeenth aspects, the power amplifier (3) further includes a main body portion (31) including a functional portion. The main body portion (31) of the power amplifier (3) is located outside the mounting substrate (2).

[0299] According to the high-frequency module (1) related to the eighteenth aspect, compared with the case where a recess for accommodating the main body portion (31) of the power amplifier (3) is formed in the mounting substrate (2), the strength of the mounting substrate (2) can be improved.

[0300] The communication device (8) related to the nineteenth aspect includes the high-frequency module (1) according to any one of the first to eighteenth aspects and a signal processing circuit (82). The signal processing circuit (82) is connected to the high-frequency module (1).

[0301] According to the communication device (8) related to the nineteenth aspect, the high-frequency module (1) can be miniaturized in height.

[0302] Explanation of Reference Numerals

[0303] 1: High-frequency module; 2: Mounting substrate; 21: First main surface; 22: Second main surface; 23: Dielectric layer; 3: Power amplifier; 31: Main body portion; 311: One main surface; 32, 33: Electrodes; 34: Ground bump; 35: RF bump; 41, 42: Resin layers; 51: First recess; 511: Bottom surface; 512: Side surface; 52: Second recess; 521: Bottom surface; 522: Side surface; 53: Third recess; 531: Bottom surface; 532: Side surface; 61: First electrode; 62: Second electrode; 63: Side electrode; 64: Ground layer; 65, 671, 672, 68: Wiring pattern conductors; 66: Via conductor; 69: Third electrode; 7: Electronic component; 71: Main body portion; 711: One main surface; 72: Electrode; 73: Bump; 8: Communication device; 81: Antenna; 82: Signal processing circuit; 83: Baseband signal processing circuit; 84: RF signal processing circuit; L1, L2: Distance; D1: Thickness direction; D21: First direction; D22: Second direction.

Claims

1. A high frequency module, comprising: A mounting substrate having a first main surface and a second main surface facing each other; and A power amplifier is arranged on the first main surface of the mounting substrate, and has a radio frequency bump (RF bump) and a ground bump, wherein the height of the ground bump is higher than the height of the RF bump. in, The mounting substrate has a first recessed portion, and the first recessed portion is formed on the first main surface of the mounting substrate. The ground bump is disposed in the first recess of the mounting substrate.

2. The high frequency module according to claim 1, wherein: The mounting substrate further includes a second recessed portion formed on the first main surface of the mounting substrate. The RF bump of the power amplifier is arranged in the second recess of the mounting substrate.

3. The high frequency module according to claim 2, wherein: The first recessed portion is continuous with the second recessed portion.

4. The high frequency module according to claim 2, wherein: The side surface of the second recessed portion of the mounting substrate is a curved surface when viewed in plan from the thickness direction of the mounting substrate.

5. The high frequency module according to claim 2, wherein: The mounting substrate includes a wiring pattern conductor formed in at least one of the first recess and the second recess.

6. The high frequency module according to claim 2, wherein: The mounting substrate has a side surface electrode formed on a side surface of the second recess.

7. The high frequency module according to claim 1, wherein: The RF bump of the power amplifier is arranged on a portion of the first main surface of the mounting substrate where no recess is formed.

8. The high frequency module according to any one of claims 1 to 7, wherein: The mounting substrate includes a via conductor connected to the first recessed portion where the ground bump is arranged.

9. The high frequency module according to any one of claims 1 to 8, wherein: The side surface of the first recessed portion of the mounting substrate is a curved surface when viewed in plan from the thickness direction of the mounting substrate.

10. The high frequency module according to any one of claims 1 to 9, wherein: The mounting substrate has a side surface electrode formed on a side surface of the first recessed portion.

11. The high frequency module according to any one of claims 3 to 10, wherein: An electronic component is further provided. The electronic component is arranged on the second main surface of the mounting substrate and has a bump.

12. The high frequency module according to claim 11, wherein: The mounting substrate further includes a third recessed portion formed on the second main surface. The bump of the electronic component is arranged in the third recess of the mounting substrate.

13. The high frequency module according to claim 12, wherein: The mounting substrate further includes a second recessed portion formed on the first main surface of the mounting substrate. The RF bump of the power amplifier is arranged in the second recess of the mounting substrate, The third recessed portion of the mounting substrate overlaps with the second recessed portion of the mounting substrate when viewed in plan from the thickness direction of the mounting substrate.

14. The high frequency module according to any one of claims 1 to 13, wherein: A resin layer is further provided, the resin layer being in contact with the first main surface of the mounting substrate and covering at least a portion of the power amplifier.

15. The high frequency module according to claim 14, wherein: The resin layer contains a filler, A distance between the power amplifier and the mounting substrate is larger than a diameter of the filler contained in the resin layer.

16. The high frequency module according to claim 14, wherein: The resin layer contains a filler, A distance between the power amplifier and the mounting substrate is smaller than a diameter of the filler included in the resin layer.

17. The high frequency module according to any one of claims 14 to 16, wherein: further comprising a shielding layer, the shielding layer covering the resin layer and at least a portion of the mounting substrate, The mounting substrate has a ground layer, The shielding layer contacts at least a portion of the formation.

18. The high frequency module according to any one of claims 1 to 17, wherein: The power amplifier also has a main body including a functional part, The main body of the power amplifier is located outside the mounting substrate.

19. A communication device comprising: The high frequency module according to any one of claims 1 to 18; and The signal processing circuit is connected to the high frequency module.

Images