Metal ceramic heat dissipation carrier plate, manufacturing method and power semiconductor device

Abstract

The invention relates to the technical field of heat dissipation of power semiconductor devices, and provides a metal ceramic heat dissipation carrier plate, a manufacturing method and a power semiconductor device. The first bonding layer is arranged on one side of the ceramic substrate; the circuit layer is arranged on the first bonding layer; the second bonding layer is arranged on the other side of the ceramic substrate; the heat dissipation layer is arranged on the second bonding layer; the first bonding layer and the second bonding layer are formed by brazing and processing sputtering films with the surface roughness within a preset range, and the sputtering films are formed by pulse plasma sputtering. Sputtering films with the surface roughness within the preset range are formed on the two sides of the ceramic substrate through pulse plasma sputtering, and the ceramic substrate can be reliably connected with the circuit layer and the heat dissipation layer through the first bonding layer and the second bonding layer which are formed by the sputtering films through brazing machining. The reliability of combination between the ceramic substrate and the circuit layer and between the ceramic substrate and the heat dissipation layer is improved, and the structural strength and the heat dissipation performance of the metal ceramic heat dissipation carrier plate are guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of heat dissipation of power semiconductor devices, and particularly to a metal-ceramic heat dissipation carrier plate, a manufacturing method and a power semiconductor device. Background Art

[0002] With the development of power semiconductor technology, the performance of power semiconductors has been gradually improved and is widely used in different fields, such as electric vehicles, railways and other fields. The improvement of performance leads to the increase of working voltage and power, which puts forward higher requirements for heat dissipation. When a power semiconductor is operating, a large amount of heat will be generated. If the heat is not dissipated in time, the temperature will be too high, which will affect the operation stability and shorten the service life. At present, a heat dissipation carrier plate formed by a metal-ceramic structure uses a ceramic material with high thermal conductivity to absorb and transfer the heat generated by the operation of a semiconductor circuit in time, and has stronger heat dissipation performance compared with the traditional silicon substrate structure. Therefore, using a metal-ceramic heat dissipation carrier plate can effectively meet the heat dissipation requirements of power semiconductors.

[0003] However, for the existing metal-ceramic heat dissipation carrier plates, due to the characteristic differences between ceramic materials and metal materials, there are problems of insufficient connection strength between ceramics and metals and easy connection defects, such as voids existing at the bonding interface, which will lead to the performance degradation of the metal-ceramic heat dissipation carrier plate, and even the risk of separation and detachment of ceramics and metals, resulting in a significant decrease in heat dissipation performance and possible damage to the circuit formed by the metal.

[0004] Therefore, how to improve the reliability of the connection and combination between ceramics and metals in a metal-ceramic heat dissipation carrier plate is an urgent problem to be solved. Summary of the Invention

[0005] The present invention provides a metal-ceramic heat dissipation carrier plate, a manufacturing method and a power semiconductor device to solve the defect of low reliability of the connection and combination between ceramics and metals in the existing metal-ceramic heat dissipation carrier plate.

[0006] The present invention provides a metal-ceramic heat dissipation carrier plate, comprising: a ceramic substrate; a first bonding layer disposed on one side of the ceramic substrate; a circuit layer disposed on the first bonding layer; a second bonding layer disposed on the other side of the ceramic substrate; a heat dissipation layer disposed on the second bonding layer; wherein, the first bonding layer and the second bonding layer are formed by brazing a sputtering film with a surface roughness within a preset range formed by pulsed plasma sputtering.

[0007] A cermet heat dissipation carrier plate provided by the present invention, wherein the first bonding layer and the second bonding layer are formed of at least one element among titanium, zirconium, silver, copper, aluminum, chromium, nickel, niobium, and zinc.

[0008] A cermet heat dissipation carrier plate provided by the present invention, wherein the ceramic substrate is made of alumina, aluminum nitride, zirconia-reinforced alumina, or silicon nitride.

[0009] The present invention also provides a method for manufacturing a cermet heat dissipation carrier plate, including: Based on pulsed plasma sputtering, sputtering films with surface roughness within a preset range are made on both sides of the ceramic substrate to form a first sputtering film and a second sputtering film; Attach the conductive substrate to the first sputtering film and attach the heat dissipation substrate to the second sputtering film; Based on the brazing process, heat is applied to make the first sputtering film form a first bonding layer and the second sputtering film form a second bonding layer. The conductive substrate is connected to the ceramic substrate through the first bonding layer to form a conductive layer, and the heat dissipation substrate is connected to the ceramic substrate through the second bonding layer to form a heat dissipation layer; Based on the photomask process, etch the conductive layer to form a circuit layer; Perform cutting treatment according to the circuit layer to obtain a cermet heat dissipation carrier plate as described above.

[0010] A method for manufacturing a cermet heat dissipation carrier plate provided by the present invention, wherein based on pulsed plasma sputtering, sputtering films with surface roughness within a preset range are made on both sides of the ceramic substrate to form a first sputtering film and a second sputtering film, including: Based on pulsed plasma sputtering, deposit a preset metal layer on both sides of the ceramic substrate to form an initial sputtering film; Based on pulsed plasma sputtering, use inert elements to bombard and etch the initial sputtering film to make the surface roughness of the initial sputtering film within a preset range, so as to form the first sputtering film and the second sputtering film on both sides of the ceramic substrate.

[0011] A method for manufacturing a cermet heat dissipation carrier plate provided by the present invention, wherein based on pulsed plasma sputtering, use inert elements to bombard and etch the initial sputtering film to make the surface roughness of the initial sputtering film within a preset range, so as to form the first sputtering film and the second sputtering film on both sides of the ceramic substrate, including: Determine the target frequency and target duty cycle of pulsed plasma sputtering according to the target surface roughness; According to the target frequency and the target duty cycle, control pulsed plasma sputtering to bombard and etch the initial sputtered film with inert elements, so as to adjust the surface roughness of the initial sputtered film to within a preset range, and form the first sputtered film and the second sputtered film.

[0012] According to a method for manufacturing a cermet heat dissipation carrier plate provided by the present invention, determining the target frequency and the target duty cycle of pulsed plasma sputtering according to the target surface roughness includes: Determine the target frequency of pulsed plasma sputtering according to the density of the target surface roughness; Determine the target duty cycle of pulsed plasma sputtering according to the refinement degree of the target surface roughness; Wherein, the density of the target surface roughness is positively correlated with the target frequency, and the refinement degree of the target surface roughness is positively correlated with the target duty cycle.

[0013] According to a method for manufacturing a cermet heat dissipation carrier plate provided by the present invention, the value range of the target frequency is 50 Hz to 5000 Hz, and the value range of the target duty cycle is 10% to 90%.

[0014] According to a method for manufacturing a cermet heat dissipation carrier plate provided by the present invention, after heating based on a brazing process to form a first bonding layer with the first sputtered film and a second bonding layer with the second sputtered film, it further includes: Add a thermal interface material layer and a heat dissipation structure on the heat dissipation layer.

[0015] The present invention also provides a power semiconductor device, including the above-mentioned cermet heat dissipation carrier plate, and further including a packaging structure that packages the cermet substrate structure therein.

[0016] A cermet heat dissipation carrier board, a manufacturing method thereof, and a power semiconductor device provided by the present invention have at least the following beneficial effects: The ceramic substrate is connected to the circuit layer through the first bonding layer and to the heat dissipation layer through the second bonding layer. The first bonding layer and the second bonding layer are formed by brazing a sputtering film formed by pulsed plasma sputtering. Based on the characteristics of pulsed plasma sputtering, there is a strong bonding force between the sputtering film and the ceramic substrate, and there will be no connection defects such as voids in the bonding between the sputtering film and the ceramic substrate, that is, the connection between the sputtering film and the ceramic substrate is firm and reliable. At the same time, based on pulsed plasma sputtering, the surface roughness of the sputtering film is processed within a preset range, so that when the sputtering film is brazed, the interfacial reaction between the sputtering film and the contact material is promoted, and the bonding force between the first bonding layer and the second bonding layer formed by the sputtering film and the contact material is improved. In this way, sputtering films with surface roughness within a preset range are formed on both sides of the ceramic substrate by pulsed plasma sputtering, and the first bonding layer and the second bonding layer formed by brazing the sputtering film can reliably connect the ceramic substrate to the circuit layer and the heat dissipation layer, improving the reliability of the bonding between the ceramic substrate and the circuit layer and the heat dissipation layer respectively, which is beneficial to ensuring the structural strength and heat dissipation performance of the cermet heat dissipation carrier board. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0018] Figure 1 It is a schematic structural diagram of an embodiment of a cermet heat dissipation carrier board provided by the present invention.

[0019] Figure 2 It is a schematic flow chart of a manufacturing method of a cermet heat dissipation carrier board provided by the present invention.

[0020] REFERENCE SIGNS: 100: ceramic substrate; 200: first bonding layer; 300: circuit layer; 400: second bonding layer; 500: heat dissipation layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0021] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following will clearly and completely describe the technical solutions in the present invention with reference to the drawings in the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

[0022] The following will describe a cermet heat dissipation carrier plate of the present invention, including: Figure 1 A ceramic substrate 100; A first bonding layer 200, disposed on one side of the ceramic substrate 100; A circuit layer 300, disposed on the first bonding layer 200; A second bonding layer 400, disposed on the other side of the ceramic substrate 100; A heat dissipation layer 500, disposed on the second bonding layer 400; Wherein, the first bonding layer 200 and the second bonding layer 400 are formed by brazing a sputtering film with a surface roughness within a preset range formed by pulsed plasma sputtering. The ceramic substrate 100 is connected to the circuit layer 300 through the first bonding layer 200 and connected to the heat dissipation layer 500 through the second bonding layer 400. The first bonding layer 200 and the second bonding layer 400 are formed by brazing a sputtering film formed by pulsed plasma sputtering. Based on the characteristics of pulsed plasma sputtering, there is a strong bonding force between the sputtering film and the ceramic substrate 100, and there will be no connection defects such as voids in the bonding between the sputtering film and the ceramic substrate, that is, the connection between the sputtering film and the ceramic substrate 100 is firm and reliable. At the same time, based on pulsed plasma sputtering, the surface roughness of the sputtering film is processed within a preset range, so that when the sputtering film is brazed, the interfacial reaction between the sputtering film and the contact material is promoted, and the bonding force between the first bonding layer 200 and the second bonding layer 400 formed by the sputtering film and the contact material is improved.

[0023] Thus, sputtering films with surface roughness within a preset range are formed on both sides of the ceramic substrate 100 by pulsed plasma sputtering. The first bonding layer and the second bonding layer respectively formed by brazing the sputtering films can reliably connect the ceramic substrate 100 to the circuit layer 300 and the heat dissipation layer 500, improve the reliability of the bonding between the ceramic substrate 100 and the circuit layer 300 and the heat dissipation layer 500 respectively, and are beneficial to ensuring the structural strength and heat dissipation performance of the cermet heat dissipation carrier plate.

[0024] Thereby, sputtering films with surface roughness within a preset range are formed on both sides of the ceramic substrate 100 by pulsed plasma sputtering. The first bonding layer and the second bonding layer respectively formed by brazing the sputtering films can reliably connect the ceramic substrate 100 to the circuit layer 300 and the heat dissipation layer 500, improve the reliability of the bonding between the ceramic substrate 100 and the circuit layer 300 and the heat dissipation layer 500 respectively, and are beneficial to ensuring the structural strength and heat dissipation performance of the cermet heat dissipation carrier plate.

[0025] Pulsed Plasma Sputtering is a Physical Vapor Deposition (PVD) technique that controls the plasma state by applying a pulsed power supply, with the advantages of high ionization rate, low thermal effect, high deposition rate, strong controllability, and low defect rate. Pulsed Plasma Sputtering can increase the ionization rate of the sputtered material, promote the densification and uniform deposition of the thin film, avoid the generation of void defects, and the short-time high-energy and instantaneous cooling characteristics reduce the thermal shock to the substrate, making it suitable for temperature-sensitive ceramic substrates 100. Moreover, Pulsed Plasma Sputtering can effectively reduce the particles and impurities generated during the sputtering process, thereby improving the uniformity and purity of the thin film. The high controllability of Pulsed Plasma Sputtering enables precise control of parameters such as the thickness of the thin film by adjusting the pulse parameters.

[0026] It should be noted that usually, Pulsed Plasma Sputtering is mainly used to form a uniform sputtered film. In the context of this invention for the cermet combination scenario, Pulsed Plasma Sputtering is further utilized. By bombarding the uniformly sputtered film on the surface with inert elements such as argon (Ar), since inert elements like argon are difficult to react and combine, three-dimensional concave and convex structures will be etched on the surface of the sputtered film, changing the surface roughness of the sputtered film. Then, during the brazing process, the surface roughness within the preset range increases the interfacial energy, promotes the eutectic melting reaction, improves the bonding force between the sputtered film and the contact material, and can also reduce the required brazing temperature, which is beneficial for reducing production costs and avoiding the impact of excessive brazing temperature on the ceramic substrate 100, thus improving the reliability of the brazing process. In this way, on the one hand, the strong bonding force between the sputtered film and the substrate material is utilized to make the sputtered film reliably bonded to the ceramic substrate 100. On the other hand, the surface roughness of the sputtered film is used to improve the bonding force with the contact material (usually metal). After the sputtered film forms the first bonding layer 200 and the second bonding layer 400, the connection and bonding between the ceramic substrate 100 and the metal become more reliable. It can be understood that after the ceramic substrate 100 is reliably connected and bonded to the metal, the metal on one side of the ceramic substrate 100 can be further processed to form the circuit layer 300, and the metal on the other side of the ceramic substrate 100 can be used as the heat dissipation layer 500 to transfer and dissipate heat.

[0027] In some embodiments of a cermet heat dissipation carrier plate of the present invention, the first bonding layer 200 and the second bonding layer 400 are formed of at least one element selected from titanium, zirconium, silver, copper, aluminum, chromium, nickel, niobium, and zinc.

[0028] Elements such as titanium, zirconium, silver, copper, aluminum, chromium, nickel, niobium, and zinc form a sputtering film through pulsed plasma sputtering. It can be a single-element sputtering film formed by a single layer such as titanium or zirconium, or a binary sputtering film such as titanium-silver, or a ternary sputtering film such as titanium-silver-copper, or even a sputtering film of more elements. According to actual application requirements and cost conditions, appropriate elements are selected to form the sputtering film, and then after brazing processing, the first bonding layer 200 and the second bonding layer 400 are formed, achieving the effect of improving the bonding force between the ceramic substrate 100, the circuit layer 300, and the heat dissipation layer 500.

[0029] In some embodiments of a metal-ceramic heat dissipation carrier plate of the present invention, the ceramic substrate 100 is made of alumina, aluminum nitride, zirconia-reinforced alumina, or silicon nitride.

[0030] According to the different characteristics of actual application scenarios, based on the working environment conditions, the ceramic substrate 100 made of alumina, aluminum nitride, zirconia-reinforced alumina, or silicon nitride is selected. The thermal conductivity and structural strength of different materials vary. Under the condition of meeting the strength requirements of the application environment, materials with high thermal conductivity are preferably selected as much as possible to optimize the comprehensive performance of the ceramic substrate 100.

[0031] The ceramic substrate 100 requires excellent thermal conductivity and high strength, but there is a negative correlation between thermal conductivity and strength to a certain extent. For example, if the ceramic substrate 100 has a high thermal conductivity, the corresponding strength will be relatively low. Among the ceramic materials suitable for heat dissipation, aluminum nitride has the best thermal conductivity of 170 W / mk, but the strength is relatively low at 500 Mpa; the thermal conductivity of silicon nitride is 90 W / mk, but the strength is as high as 800 MPa. Therefore, based on application requirements, the appropriate ceramic substrate 100 is selected to meet the heat dissipation requirements. If the power semiconductor is in an environment without voltage or vibration influence below 600V, aluminum nitride with strong thermal conductivity can be selected; while in an environment with large voltage or current and significant vibration influence such as in automobiles and railways, silicon nitride can be selected. Although the thermal conductivity of silicon nitride is lower than that of aluminum nitride, its strength is excellent, which can ensure the stability of the metal-ceramic heat dissipation carrier plate in application scenarios such as electric vehicles, so that the module further made of the power semiconductor using the metal-ceramic heat dissipation carrier plate, such as a power module, has higher reliability.

[0032] In some embodiments of the present invention, the thickness of the ceramic substrate 100 is approximately 0.3 mm. If the thickness of the ceramic substrate 100 is too thin, the structural strength is low and it is easily damaged by thermal shock. If the thickness of the ceramic substrate 100 is too large, the heat transfer efficiency will be affected. Therefore, designing the thickness of the ceramic substrate 100 to be about 0.3 mm can balance the structural strength and the heat transfer efficiency to meet the application requirements.

[0033] According to the material of the ceramic substrate 100 and the thickness of the ceramic substrate 100, the thickness of the metal connected to both sides of the ceramic substrate 100 can be in the range of 0.3 mm to 1 mm.

[0034] A method for manufacturing a metal-ceramic heat dissipation carrier provided by the present invention will be described below. The method for manufacturing a metal-ceramic heat dissipation carrier described below can be mutually referred to and corresponded with the metal-ceramic heat dissipation carrier described above.

[0035] Reference Figure 2 , the present invention also provides a method for manufacturing a metal-ceramic heat dissipation carrier, including: S100: Based on pulsed plasma sputtering, sputtering films with surface roughness within a preset range are fabricated on both sides of the ceramic substrate 100 to form a first sputtering film and a second sputtering film; S200: Attach a conductive substrate to the first sputtering film and attach a heat dissipation substrate to the second sputtering film; S300: Heat based on a brazing process to make the first sputtering film form a first bonding layer 200 and the second sputtering film form a second bonding layer 400. The conductive substrate is connected to the ceramic substrate 100 through the first bonding layer 200 to form a conductive layer, and the heat dissipation substrate is connected to the ceramic substrate 100 through the second bonding layer 400 to form a heat dissipation layer 500; S400: Based on a photomask process, etch the conductive layer to form a circuit layer 300; S500: Perform a cutting process according to the circuit layer 300 to obtain the above-mentioned metal-ceramic heat dissipation carrier.

[0036] Using pulsed plasma sputtering, a first sputtering film is formed on one side of the ceramic substrate 100 and a second sputtering film is formed on the other side. Both the first sputtering film and the second sputtering film have a strong bonding force with the ceramic substrate 100. The surface roughness of the first sputtering film and the surface roughness of the second sputtering film are both within a preset range, so that when heating based on a brazing process, the first sputtering film is connected and combined with the attached conductive substrate, the first bonding layer 200 and the conductive layer, and the second sputtering film is connected and combined with the attached heat dissipation substrate to form a second bonding layer 400 and a heat dissipation layer 500. The conductive layer is processed through a photomask process to etch the required circuit pattern on the conductive layer, so that the conductive layer forms a circuit layer 300 to achieve the required circuit function.

[0037] Thus, through pulsed plasma sputtering, a first sputtering film and a second sputtering film with high bonding strength are formed on both sides of the ceramic substrate 100, and the surface roughness of the first sputtering film and the second sputtering film is within a preset range, preventing the surface roughness from being too small. By using the surface roughness, the bonding force between the first bonding layer 200 formed by brazing and the conductive layer and the bonding force between the second bonding layer 400 and the heat dissipation layer 500 are improved, thereby making the connection and bonding between the ceramic substrate 100, the conductive layer, and the heat dissipation layer 500 more firm and reliable.

[0038] After the conductive layer is reliably bonded to the ceramic substrate 100, the circuit layer 300 is further formed based on photomask processing. It can be understood that, in order to improve production efficiency, the initial complete circuit layer 300 includes multiple identical circuit units, and cutting processing is performed according to the circuit unit boundaries in the circuit layer 300 to divide and form the structures of multiple metal-ceramic heat dissipation carriers correspondingly. In some embodiments of the present invention, the cutting processing can be achieved by means such as laser cutting.

[0039] In some embodiments of the present invention, the conductive substrate and the heat dissipation substrate can be made of materials with excellent electrical conductivity and thermal conductivity such as silver, copper, gold, and aluminum. The conductive substrate and the heat dissipation substrate can be made of the same material or different materials, such as both using copper, or the conductive substrate using silver and the heat dissipation substrate using copper and other implementation manners.

[0040] In some embodiments of a method for manufacturing a metal-ceramic heat dissipation carrier according to the present invention, the S100 includes: Based on pulsed plasma sputtering, a preset metal layer is deposited on both sides of the ceramic substrate 100 to form an initial sputtering film; Based on pulsed plasma sputtering, the initial sputtering film is bombarded and etched with inert elements to make the surface roughness of the initial sputtering film within a preset range, so as to form the first sputtering film and the second sputtering film on both sides of the ceramic substrate 100.

[0041] First, based on pulsed plasma sputtering, elements for forming the sputtering film, such as titanium, zirconium, silver, copper, aluminum, chromium, nickel, niobium, zinc, etc., are sputter-deposited on both sides of the ceramic substrate 100 to form an initial sputtering film. Then, further using pulsed plasma sputtering, the initial sputtering film is bombarded and etched with inert elements so that a three-dimensional concave-convex structure is formed on the surface of the initial sputtering film, achieving the adjustment of the surface roughness of the initial sputtering film, increasing the surface roughness, and forming the first sputtering film and the second sputtering film on both sides of the ceramic substrate 100.

[0042] The inert elements used to adjust the surface roughness can be implemented by using elements such as argon that are difficult to combine with the initial sputtering film.

[0043] Considering process processing costs such as the consumption of the sputtering target, thermal conductivity, internal residual stress related to the sputtering film and thickness, and the time-consuming of sputtering processing, etc., the thickness of the first sputtering film and the thickness of the second sputtering film can be in the range of 1 µm to 3 µm. For a single-component sputtering film or a binary-component sputtering film, a smaller thickness can be taken.

[0044] It should be emphasized that as the thickness of the initial sputtering film increases, the internal residual stress will also increase accordingly. By bombarding and etching the initial sputtering film with inert elements, the internal residual stress in the initial sputtering film can be offset, avoiding the degradation of the performance of the sputtering film caused by the internal residual stress, which is beneficial to improving the performance of the first sputtering film and the second sputtering film.

[0045] During subsequent brazing processing, the surface roughness of the first sputtering film and the second sputtering film is within a preset range, which increases the interfacial energy between the bonded conductive substrate and heat dissipation substrate, promotes the eutectic reaction to improve the bonding force, and can reduce the brazing temperature required for bonding, which is beneficial to reducing production costs and avoiding the influence of too high brazing temperature on the ceramic substrate 100, and improving the reliability of brazing processing.

[0046] In some embodiments of a method for manufacturing a cermet heat dissipation carrier plate according to the present invention, based on pulsed plasma sputtering, using inert elements to bombard and etch the initial sputtering film to make the surface roughness of the initial sputtering film within a preset range, so as to form the first sputtering film and the second sputtering film on both sides of the ceramic substrate 100, including: Determine the target frequency and target duty cycle of pulsed plasma sputtering according to the target surface roughness; According to the target frequency and the target duty cycle, control pulsed plasma sputtering to make inert elements bombard and etch the initial sputtering film, so as to adjust the surface roughness of the initial sputtering film to within a preset range, and form the first sputtering film and the second sputtering film.

[0047] In the process of bombarding and etching an initial sputtered film with inert elements to adjust the surface roughness, by controlling the frequency and duty factor of pulsed plasma sputtering, the density and energy of bombarding the inert elements on the initial sputtered film can be correspondingly controlled. The higher the frequency of pulsed plasma sputtering, the shorter the interval of emitted electrons, and thus the more plasma formed by ionizing inert elements, and the greater the density of bombarding the initial sputtered film. The greater the duty factor of pulsed plasma sputtering, the higher the electron energy of the emitted electrons, making it easier for inert elements to be ionized and have higher energy. The plasma formed by higher-energy inert elements bombards the initial sputtered film with a greater etching depth, which can correspondingly increase the surface roughness. Thus, based on the target surface roughness, the target frequency and target duty factor of pulsed plasma sputtering are correspondingly determined, facilitating the surface roughness of the first sputtered film and the surface roughness of the second sputtered film to be within a preset range, that is, close to the target surface roughness, to meet the requirements of subsequent brazing to improve the bonding force.

[0048] In some embodiments of a method for manufacturing a cermet heat dissipation carrier plate according to the present invention, the determining the target frequency and target duty factor of pulsed plasma sputtering according to the target surface roughness includes: Determining the target frequency of pulsed plasma sputtering according to the density of the target surface roughness; Determining the target duty factor of pulsed plasma sputtering according to the refinement degree of the target surface roughness; Wherein, the density of the target surface roughness is positively correlated with the target frequency, and the refinement degree of the target surface roughness is positively correlated with the target duty factor.

[0049] The surface roughness can be considered to be determined by the density of the three-dimensional uneven structure and the refinement degree. The density refers to the number of unevennesses per unit area, and the refinement degree refers to the height difference of the unevennesses. The number of unevennesses per unit area is related to the number of bombarding plasmas formed by inert elements. Therefore, the target frequency of pulsed plasma sputtering is determined according to the density of the target surface roughness; the height difference of the unevennesses is related to the bombarding depth of the plasmas formed by inert elements, that is, related to the energy of the plasmas formed by inert elements. Therefore, the target duty factor of pulsed plasma sputtering is determined according to the refinement degree of the target surface roughness. Thus, the working parameters of pulsed plasma sputtering can be accurately controlled to more precisely make the surface roughness of the first sputtered film and the surface roughness of the second sputtered film within a preset range, close to the required target surface roughness.

[0050] In some embodiments of the present invention, the sputtering time of pulsed plasma sputtering can also be determined according to the thickness of the initial sputtered film.

[0051] In some embodiments of a method for manufacturing a cermet heat dissipation carrier plate according to the present invention, the value range of the target frequency is from 50 Hz to 5000 Hz, and the value range of the target duty cycle is from 10% to 90%.

[0052] When the thickness of the initial sputtered film is relatively low, pulse plasma sputtering working parameters with a low frequency and a low duty cycle can be adopted, such as a duty cycle below 50%; when the thickness of the initial sputtered film is relatively large, pulse plasma sputtering working parameters with a high frequency and a high duty cycle can be adopted, such as a duty cycle above 50%, so as to offset the residual stress generated inside the thick layer of the initial sputtered film to a certain extent and avoid the problem of deterioration of the film characteristics caused thereby.

[0053] In some embodiments of a method for manufacturing a cermet heat dissipation carrier plate according to the present invention, after the step S300, the method further includes: Adding a thermal interface material layer and a heat dissipation structure on the heat dissipation layer 500.

[0054] Adding a heat dissipation interface material and a heat dissipation structure on the heat dissipation layer 500 to further improve the heat dissipation performance. The heat absorbed by the heat dissipation layer 500 from the ceramic substrate 100 is transferred to the heat dissipation structure through the thermal interface material, so as to efficiently dissipate heat through the heat dissipation structure.

[0055] In some embodiments of the present invention, the heat dissipation structure may be a water-cooled or air-cooled cooling pin.

[0056] A power semiconductor device provided by the present invention will be described below. The power semiconductor device described below can be correspondingly referred to the cermet heat dissipation carrier plate and the method for manufacturing a cermet heat dissipation carrier plate described above.

[0057] The present invention further provides a power semiconductor device, which includes the above-mentioned cermet heat dissipation carrier plate and further includes a packaging structure that packages the metal ceramic substrate 100 therein.

[0058] The encapsulation structure encapsulates the above-mentioned cermet heat dissipation carrier board. In the structure of the cermet heat dissipation carrier board, the ceramic substrate 100 is connected to the circuit layer 300 through the first bonding layer 200 and is connected to the heat dissipation layer 500 through the second bonding layer 400. The first bonding layer 200 and the second bonding layer 400 are formed by brazing the sputtering film formed by pulsed plasma sputtering. Based on the characteristics of pulsed plasma sputtering, there is a strong bonding force between the sputtering film and the ceramic substrate 100, and there will be no connection defects such as voids in the bonding between the sputtering film and the ceramic substrate, that is, the connection between the sputtering film and the ceramic substrate 100 is firm and reliable. At the same time, based on pulsed plasma sputtering, the surface roughness of the sputtering film is processed within a preset range, so that when the sputtering film is brazed, the interfacial reaction between the sputtering film and the contact material is promoted, and the bonding force between the first bonding layer 200 and the second bonding layer 400 formed by the sputtering film and the contact material is improved.

[0059] Therefore, sputtering films with surface roughness within a preset range are formed on both sides of the ceramic substrate 100 by pulsed plasma sputtering, and the first bonding layer and the second bonding layer respectively formed by brazing the sputtering film can reliably connect the ceramic substrate 100 to the circuit layer 300 and the heat dissipation layer 500, improving the reliability of the bonding between the ceramic substrate 100 and the circuit layer 300 and the heat dissipation layer 500 respectively, which is beneficial to ensuring the structural strength and heat dissipation performance of the cermet heat dissipation carrier board, and further improving the heat dissipation of the power semiconductor device, which is beneficial to enhancing the overall performance of the power semiconductor device.

[0060] In the description of the present invention, it should be understood that the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present invention, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0061] In the description of this specification, the description with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0062] All actions of obtaining signals, information or data in this application are carried out on the premise of complying with the corresponding data protection regulations and policies of the location and with the authorization given by the owner of the corresponding device.

[0063] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A metal ceramic heat dissipation carrier, characterized in that: include: Ceramic substrate (100); A first bonding layer (200) is disposed on one side of the ceramic substrate (100); A circuit layer (300) is disposed on the first bonding layer (200); A second bonding layer (400) is disposed on the other side of the ceramic substrate (100); A heat dissipation layer (500) is disposed on the second bonding layer (400); The first bonding layer (200) and the second bonding layer (400) are formed by brazing a sputtered film having a surface roughness within a preset range formed by pulsed plasma sputtering.

2. A metal ceramic heat dissipation carrier according to claim 1, characterized in that: The first bonding layer (200) and the second bonding layer (400) are formed of at least one element selected from the group consisting of titanium, zirconium, silver, copper, aluminum, chromium, nickel, niobium and zinc.

3. The metal ceramic heat dissipation carrier according to claim 1, characterized in that: The ceramic substrate (100) is made of alumina, aluminum nitride, zirconium oxide reinforced alumina or silicon nitride.

4. A method for manufacturing a metal ceramic heat dissipation carrier, characterized in that: include: Based on pulsed plasma sputtering, sputtered films with surface roughness within a preset range are produced on both sides of a ceramic substrate (100) to form a first sputtered film and a second sputtered film; Laying a conductive substrate on the first sputtered film and laminating a heat dissipation substrate on the second sputtered film; Heating is performed based on a brazing process, so that the first sputtered film forms a first bonding layer (200) and the second sputtered film forms a second bonding layer (400), the conductive substrate is connected to the ceramic substrate (100) via the first bonding layer (200) to form a conductive layer, and the heat dissipation substrate is connected to the ceramic substrate (100) via the second bonding layer (400) to form a heat dissipation layer (500); Based on a photomask process, etching the conductive layer to form a circuit layer (300); A cutting process is performed on the circuit layer (300) to obtain a metal ceramic heat dissipation carrier according to any one of claims 1 to 3.

5. The method for manufacturing a metal ceramic heat dissipation carrier according to claim 4, characterized in that: The method comprises: producing sputtering films with a surface roughness within a preset range on both sides of a ceramic substrate (100) based on pulsed plasma sputtering to form a first sputtering film and a second sputtering film, comprising: Based on pulse plasma sputtering, a preset metal layer is deposited on both sides of the ceramic substrate (100) to form an initial sputtering film; Based on pulse plasma sputtering, the initial sputtered film is bombarded and etched using an inert element so that the surface roughness of the initial sputtered film is within a preset range, thereby forming the first sputtered film and the second sputtered film on both sides of the ceramic substrate (100).

6. A method for manufacturing a metal ceramic heat dissipation carrier according to claim 5, characterized in that: The method comprises: based on pulse plasma sputtering, using an inert element to bombard and etch the initial sputtered film, so that the surface roughness of the initial sputtered film is within a preset range, so as to form the first sputtered film and the second sputtered film on both sides of the ceramic substrate (100), comprising: According to the target surface roughness, the target frequency and target duty cycle of pulsed plasma sputtering are determined; According to the target frequency and the target duty cycle, pulsed plasma sputtering is controlled to allow the inert elements to bombard and etch the initial sputtered film, so as to adjust the surface roughness of the initial sputtered film to a preset range, thereby forming the first sputtered film and the second sputtered film.

7. A method for manufacturing a metal ceramic heat dissipation carrier according to claim 6, characterized in that: Determining the target frequency and target duty cycle of pulsed plasma sputtering according to the target surface roughness includes: Determining the target frequency of pulsed plasma sputtering according to the density of the target surface roughness; Determining the target duty cycle of pulsed plasma sputtering according to the refinement degree of the target surface roughness; The density of the target surface roughness is positively correlated with the target frequency, and the refinement degree of the target surface roughness is positively correlated with the target duty cycle.

8. A method for manufacturing a metal ceramic heat dissipation carrier according to claim 6 or 7, characterized in that: The target frequency ranges from 50 Hz to 5000 Hz, and the target duty cycle ranges from 10% to 90%.

9. The method for manufacturing a metal ceramic heat dissipation carrier according to claim 4, characterized in that: After heating is performed based on the brazing process so that the first sputtered film forms a first bonding layer (200) and the second sputtered film forms a second bonding layer (400), the method further comprises: A thermal interface material layer and a heat dissipation structure are added on the heat dissipation layer (500).

10. A power semiconductor device, characterized in that: It comprises a metal ceramic heat dissipation carrier according to any one of claims 1 to 3, and also comprises a packaging structure, wherein the packaging structure encapsulates the metal ceramic substrate (100) structure.

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