Self-assembled compound, perovskite solar cell, power utilization device, and power generation device

Abstract

The invention discloses a self-assembly compound, a perovskite solar cell, a power utilization device and a power generation device.The structural formula of the self-assembly compound comprises an A group and an Ar group, the A group is located at one end of the structural formula of the self-assembly compound, the Ar group is located at the other end of the structural formula of the self-assembly compound, and the A group is located at one end of the structural formula of the self-assembly compound. The A group is an oxyacid group or a corresponding salt thereof, and the Ar group comprises at least one aromatic ring functional group of an ammonium salt group or a phosphonium salt group. Through the above mode, the self-assembly compound can passivate the interface of the perovskite layer facing the hole transport layer, or passivate the interface of the hole transport layer facing the perovskite layer and the interface of the perovskite layer facing the hole transport layer at the same time, thereby reducing the interface defects, and improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

Description

Technical Field

[0001] The present application relates to the technical field of perovskite solar cells, and particularly to a self-assembled compound, a perovskite solar cell, an electrical device, and a power generation device. Background Art

[0002] A perovskite solar cell refers to a battery that uses a perovskite material as a light-absorbing layer material. Due to the significant performance advantages of perovskite materials, such as high light absorption coefficient, carrier mobility, direct and adjustable optical bandgap, perovskite solar cells have received extensive attention and developed rapidly. However, in perovskite solar cells, the hole transport interface of the perovskite layer has a large number of defects, which affect the photoelectric conversion efficiency and stability of perovskite solar cells. Summary of the Invention

[0003] In view of the above technical problems, the present application provides a self-assembled compound, a perovskite solar cell, an electrical device, and a power generation device, which can passivate the interface of the perovskite layer facing the hole transport layer to improve the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0004] The first technical solution adopted by the present application is: to provide a self-assembled compound, the structural formula of the self-assembled compound includes an A group and an Ar group. The A group is located at one end of the structural formula of the self-assembled compound, and the Ar group is located at the other end of the structural formula of the self-assembled compound. The A group is an oxygen-containing acid group or its corresponding salt, and the Ar group includes an aromatic ring functional group with at least one ammonium salt group or phosphonium salt group.

[0005] In the technical solution of the embodiment of the present application, the self-assembled compound can be used in both normal and inverted perovskite solar cells. Using the self-assembled compound as a hole transport layer or doping it into the hole transport layer can not only conduct hole transport, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer. Or, using the self-assembled compound as a passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer, and at the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite battery.

[0006] Furthermore, the structural formula of the self-assembled compound includes an A group and an Ar group. The A group is an oxyacid group or its corresponding salt, and the Ar group includes an aromatic ring functional group with at least one ammonium salt group or phosphonium salt group. When this self-assembled compound is used as a hole transport layer or doped into a hole transport layer, the ammonium salt group or phosphonium salt group can enter the lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer and reducing defects. When this self-assembled compound is used as a passivation layer between the hole transport layer and the perovskite, the oxyacid group or its corresponding salt can passivate the interface of the hole transport layer facing the perovskite layer. At the same time, the ammonium salt group or phosphonium salt group can enter the lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer and reducing defects, thus improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0007] In some embodiments, the Ar group includes at least one of the following Ar1 group - Ar22 groups:

[0008]

[0009] Wherein, the R group independently includes -H, a halogen group, -OR', -OCOR', -NHCOR', -NR' 2 , -R', a halogen-substituted -R', -SR', -PR' 2 , an ammonium salt group or a phosphonium salt group: the R' group independently includes at least one of a substituted or unsubstituted phenyl group, a thiophene group, an alkyl group with 1 - 5 carbon atoms, -H: the Y group independently includes -CR 2 -, -NR-, -O-, -SiR 2 -, -PR-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR)-, -C(=CR 2 )-: and m ranges from 1 to 3. Among them, in the Ar group, at least one R group is an ammonium salt group or a phosphonium salt group.

[0010] In the technical solution of the embodiment of the present application, the Ar group is within the above range, and at least one of the R groups is an ammonium salt group or a phosphonium salt group. The ammonium salt group or phosphonium salt group can enter the lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer and reducing defects, and improving the photoelectric conversion efficiency and stability of the perovskite battery.

[0011] In some embodiments, the ammonium salt group includes -(L) n NR' 3 X and -(L) n NR' 3 +At least one of: The phosphonium salt group includes -(L) n PR’ 3 X and -(L) n PR’ 3 + At least one of: wherein, the L group includes -CR 2 -, -NR-, -O-, -SiR 2 -, -PR-, -S-, -C(=O)-, -C(=S)-, -C(=NR)-, -C(=CR 2 )- At least one of: wherein, the Q group includes at least one of -NR-, -O-, -S-, and the Z group includes at least one of =CR-, =N-: X includes I - , Br - , Cl - , F - , CN - , OCN - , SCN - , BF 4 - and PF 6 - At least one of: n ranges from 0 to 10.

[0012] In the technical solution of the embodiment of the present application, the ammonium salt group and the phosphonium salt group taken from the above range can enter the lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer.

[0013] In some embodiments, the A group is connected to the Ar group, and the structural formula of the self-assembled compound is: Ar-A: or the A group is connected to the Ar group through the L group, and the structural formula of the self-assembled compound is: Ar-(L) q -A, wherein, q ranges from 1 to 10.

[0014] In the technical solution of the embodiment of the present application, the structural formula of the self-assembled compound has two types: Ar-A or Ar-(L) q -A. Using the self-assembled compound as the hole transport layer or doping it into the hole transport layer can not only transport holes, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer. Or, using the self-assembled compound as the passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer. At the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0015] In some embodiments, the oxyacid group includes -COOH, -PO(OH) 2 , -PHO(OH), -SO 2 (OH), -B(OH) 2 and at least one of the following.

[0016] In the technical solution of the embodiment of the present application, when the oxyacid group is within the above range, using the self-assembled compound as the hole transport layer or doping it into the hole transport layer, not only can hole transport be carried out, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer. Or, using the self-assembled compound as the passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer. At the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0017] In some embodiments, the A group is a salt corresponding to the oxyacid group, and the aromatic ring functional group of the Ar group includes at least one -(L) n NR’ 3 + or -(L) n PR’ 3 + .

[0018] In the technical solution of the embodiment of the present application, when the A group is a salt corresponding to the oxyacid group, in order to make the overall self-assembled compound electrically neutral after being connected to the Ar group, the aromatic ring functional group of the Ar group includes at least one -(L) n NR’ 3 + or -(L) n PR’ 3 + . Using the self-assembled compound as the hole transport layer or doping it into the hole transport layer, not only can hole transport be carried out, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer. Or, using the self-assembled compound as the passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer. At the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0019] In some embodiments, the salts corresponding to the oxyacid group include -COO - , -PO(OH)O - , -POO 2 2- , -PHOO - , -SO 2 O -, -B(OH)O - at least one of

[0020] In the technical solution of the embodiment of the present application, the A group is a salt corresponding to the oxygen-containing acid group within the above range, and the overall self-assembled compound after being connected to the Ar group is electrically neutral.

[0021] In some embodiments, the self-assembled compound includes at least one of the following SAM1-SAM23:

[0022]

[0023]

[0024] In the technical solution of the embodiment of the present application, the above self-assembled compound can passivate the interface of the perovskite layer facing the hole transport layer, reduce defects, and improve the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0025] The second technical solution adopted in the present application is: to provide a perovskite solar cell, the perovskite solar cell includes a passivation material, and the passivation material includes a first sub-passivation material, and the first sub-passivation material is the self-assembled compound as described above.

[0026] In the technical solution of the embodiment of the present application, using the self-assembled compound as the hole transport layer or doped in the hole transport layer can not only transport holes, but also the Ar group can passivate the interface of the perovskite layer facing the hole transport layer. Alternatively, using the self-assembled compound as the passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer, and at the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0027] In some embodiments, the perovskite solar cell includes a perovskite layer, a hole transport layer, and an electrode layer, the hole transport layer is located between the perovskite layer and the electrode layer, and the hole transport layer includes a passivation material; or the perovskite solar cell includes a perovskite layer, a hole transport layer, a passivation layer, and an electrode layer, the hole transport layer is located between the perovskite layer and the electrode layer, the passivation layer is located between the perovskite layer and the hole transport layer, and the passivation layer includes the passivation material.

[0028] In the technical solution of the embodiment of the present application, by using a self-assembled compound as a hole transport layer or doping it in the hole transport layer, not only can hole transport be carried out, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer. Or, by using the self-assembled compound as a passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer, and at the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0029] In some embodiments, the passivation material further includes a second sub-passivation material mixed with the first sub-passivation material, and the second sub-passivation material is a self-assembled compound different from the first sub-passivation material.

[0030] In the technical solution of the embodiment of the present application, by mixing the first sub-passivation material and the second sub-passivation material, interface defects can be reduced, and at the same time, the cost of the perovskite solar cell can be reduced.

[0031] In some embodiments, the thickness of the passivation layer is 0.1 - 5 nm.

[0032] The third technical solution adopted by the present application is: to provide a perovskite solar cell, which includes a hole transport layer, and the hole transport layer is the self-assembled compound described in any one of the above. In some embodiments, the thickness of the hole transport layer is 0.1 - 5 nm. In the technical solution of the embodiment of the present application, by using the self-assembled compound as the hole transport layer, not only can hole transport be carried out, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell. In the technical solution of the embodiment of the present application, when the thickness of the hole transport layer is within the above range, the hole transport layer can form a uniform film, has a suitable band gap, good film-forming property, is easy to form a single molecular layer, can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0033] The fourth technical solution adopted by the present application is: to provide an electrical device, which includes the perovskite solar cell described above.

[0034] The fifth technical solution adopted by the present application is: to provide a power generation device, which includes the perovskite solar cell described above.

[0035] Since the device of the present application includes the perovskite solar cell provided by the present application, it has at least the same advantages as the perovskite solar cell.

[0036] The above description is only an overview of the technical solution of the present application. In order to better understand the technical means of the present application, it can be implemented according to the content of the specification. And in order to make the above and other purposes, features and advantages of the present application more obvious and understandable, specific embodiments of the present application are specifically given below. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered to be a limitation of the present application. Moreover, in all the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0038] Figure 1 is a schematic structural diagram of a perovskite solar cell according to some embodiments of the present application;

[0039] Figure 2 is a schematic structural diagram of a perovskite solar cell according to some embodiments of the present application:

[0040] Figure 3 is a schematic structural diagram of a perovskite solar cell according to some embodiments of the present application:

[0041] Figure 4 is a schematic structural diagram of a perovskite solar cell according to some embodiments of the present application:

[0042] Figure 5 is a schematic structural diagram of an electrical device according to some embodiments of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0043] Hereinafter, embodiments of the technical solution of the present application will be described in detail with reference to the drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, so they are only examples and cannot be used to limit the protection scope of the present application.

[0044] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which this application belongs: The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application: The terms "including" and "having" and any variations thereof in the specification and claims of this application and the above description of the drawings are intended to cover non-exclusive inclusion.

[0045] In the description of the embodiments of the present application, technical terms such as "first" and "second" are only used to distinguish different objects and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity, specific order or primary-secondary relationship of the indicated technical features. In the description of the embodiments of the present application, "a plurality" means more than two unless otherwise specifically defined.

[0046] Reference to "embodiments" in this document means that the specific features, structures, or characteristics described in connection with the embodiments can be included in at least one embodiment of this application. The phrase appears in various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0047] In the description of the embodiments of this application, the term "and / or" is merely a description of the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally represents an "or" relationship between the associated objects before and after.

[0048] In the description of the embodiments of this application, the term "plurality" refers to two or more (including two). Similarly, "multiple groups" refers to two or more groups (including two groups), and "multiple pieces" refers to two or more pieces (including two pieces).

[0049] Currently, due to the outstanding advantages such as high photoelectric conversion efficiency, low cost, and simple fabrication, perovskite solar cells have become solar cells with broad prospects and a research hotspot. Perovskite solar cells can be applied to lunar rovers, satellite solar panels, various sensors, detectors, as well as civilian products such as wearable electronic products and automotive power supply. Perovskite solar cells have become a power source for consumer products in many aspects. With the continuous expansion of the application fields of perovskite solar cells and the flexible foldability of perovskite solar cells, the market demand is also continuously increasing.

[0050] In existing perovskite solar cells, there are a large number of defects at the interface of the perovskite layer facing hole transport, such as grain boundaries, dislocations, vacancies, etc. The existence of these defects affects the photoelectric conversion efficiency and stability of perovskite cells.

[0051] To solve the above technical problems, this application provides a self-assembled compound. The structural formula of the self-assembled compound includes an A group and an Ar group. The A group is located at one end of the structural formula of the self-assembled compound, and the Ar group is located at the other end of the structural formula of the self-assembled compound. The A group is an oxygen-containing acid group or its corresponding salt, and the Ar group includes an aromatic ring functional group with at least one ammonium salt group or phosphonium salt group.

[0052] The self-assembled compounds of the embodiments of the present application can be used in normal and inverse perovskite solar cells. By using the self-assembled compounds as the hole transport layer or doping them into the hole transport layer, not only can hole transport be carried out, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer. Alternatively, by using the self-assembled compounds as the passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer. At the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0053] Furthermore, the structural formula of the self-assembled compound includes an A group and an Ar group. The A group is an oxygen-containing acid group or its corresponding salt, and the Ar group includes an aromatic ring functional group with at least one ammonium salt group or phosphonium salt group. When this self-assembled compound is used as the hole transport layer or doped into the hole transport layer, the ammonium salt group or phosphonium salt group can enter the lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer and reducing defects. When this self-assembled compound is used as the passivation layer between the hole transport layer and the perovskite, the oxygen-containing acid group or its corresponding salt can passivate the interface of the hole transport layer facing the perovskite layer. At the same time, the ammonium salt group or phosphonium salt group can enter the lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer and reducing defects, thus improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0054] The perovskite solar cells disclosed in the embodiments of the present application can be used in electrical devices for photoelectric conversion. The electrical devices can be, but are not limited to, mobile phones, tablets, laptop computers, electric toys, power tools, battery cars, electric vehicles, ships, spacecraft, and so on. Among them, the electric toys can include fixed or mobile electric toys, such as game consoles, electric vehicle toys, electric ship toys, and electric aircraft toys, etc. The spacecraft can include airplanes, rockets, space shuttles, and spaceships, etc.

[0055] In some embodiments, the Ar group includes at least one of the following Ar1 group - Ar22 groups:

[0056]

[0057] Among them, the R group independently includes -H, a halogen group, -OR', -OCOR', -NHCOR', -NR' 2 , -R', a halogen-substituted -R', -SR', -PR' 2 , an ammonium salt group or a phosphonium salt group. The R' group independently includes at least one of a substituted or unsubstituted phenyl group, a thiophene group, an alkyl group with 1 - 5 carbon atoms, and -H. The Y group independently includes -CR 2-, -NR-, -O-, -SiR 2 -, -PR-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR)-, -C(=CR 2 )-, at least one of them. m ranges from 1 to 3, that is, m can be 1, 2 or 3. In the Ar group, at least one R group is an ammonium salt group or a phosphonium salt group.

[0058] In the technical solution of the embodiment of the present application, the Ar group is within the above range, and at least one of the R groups is an ammonium salt group or a phosphonium salt group. The ammonium salt group or the phosphonium salt group can enter the lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer, reducing defects, and improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0059] In some embodiments, the ammonium salt group includes -(L) n NR’ 3 X and -(L) n NR’ 3 + at least one of them. The phosphonium salt group includes -(L) n PR’ 3 X and -(L) n PR’ 3 + at least one of them. The L group includes -CR 2 -, -NR-, -O-, -SiR 2 -, -PR-, -S-, -C(=O)-, -C(=S)-, -C(=NR)-, -C(=CR 2 )-, at least one of them. The Q group includes at least one of -NR-, -O-, -S-; the z group includes at least one of =CR-, =N-; X includes I - , Br - , Cl - , F - , CN - , OCN - , SCN - , BF 4 - and PF 6 - at least one of them, and n ranges from 0 to 10.

[0060] In the technical solution of the embodiment of the present application, the value of n can be 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, etc., or a range composed of any two of the above values. For example, it can be 0-2, 1-5, 3-6, 2-7, 5-9, 4-8, etc. The ammonium salt group and phosphonium salt group taken from the above range can enter the crystal lattice of the perovskite layer and promote the crystallization of the perovskite layer, thereby passivating the interface of the perovskite layer facing the hole transport layer.

[0061] In some embodiments, the A group is connected to the Ar group, and the structural formula of the self-assembled compound is: Ar-A; or the A group is connected to the Ar group through the L group, and the structural formula of the self-assembled compound is: Ar-(L) q -A, where the value of q is 1-10.

[0062] In the technical solution of the embodiment of the present application, the structural formula of the self-assembled compound has two types: Ar-A or Ar-(L) q -A, the value of q can be 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10, etc., or a range composed of any two of the above values. For example, it can be 1-2, 1-4, 2-6, 3-7, 5-9, 4-8, etc. When the structural formula is Ar-A, the A group is directly connected to the Ar group: when the structural formula is Ar-(L) q -A, the A group is connected to the Ar group through the L group.

[0063] Using the self-assembled compound as the hole transport layer or doping it into the hole transport layer can not only conduct hole transport, but the Ar group can also passivate the interface of the perovskite layer facing the hole transport layer. Or, using the self-assembled compound as the passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer. At the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0064] In some embodiments, the oxyacid group includes -COOH, -PO(OH) 2 , -PHO(OH), -SO 2 (OH), -B(OH) 2 at least one of them.

[0065] In the technical solution of the embodiment of the present application, the oxygen-containing acid group is within the above-mentioned range, and the self-assembled compound is used as the hole transport layer or is doped in the hole transport layer, which can not only carry out hole transport, but the Ar group can also passivate the interface of the perovskite layer toward the hole transport layer. Alternatively, the self-assembled compound is used as the passivation layer between the hole transport layer and the perovskite, and the A group can passivate the interface of the hole transport layer toward the perovskite layer. At the same time, the Ar group can passivate the interface of the perovskite layer toward the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite battery.

[0066] In some embodiments, the A group is a salt corresponding to an oxoacid group, and the aromatic ring functional group of the Ar group includes at least one -(L) n NR' 3 + or -(L) n PR' 3 + .

[0067] In the technical solution of the embodiment of the present application, when the A group is a salt corresponding to an oxyacid group, in order to make the self-assembled compound connected with the Ar group present electrical neutrality as a whole, the aromatic ring functional group of the Ar group includes at least one -(L) n NR' 3 + or -(L) n PR' 3 + Using the self-assembled compound as a hole transport layer or doping it in the hole transport layer can not only carry out hole transport, but the Ar group can also passivate the interface of the perovskite layer toward the hole transport layer. Alternatively, using the self-assembled compound as a passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer toward the perovskite layer, and at the same time, the Ar group can passivate the interface of the perovskite layer toward the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite cell.

[0068] In some embodiments, the salt corresponding to the oxoacid group includes -COO - 、-PO(OH)O - 、-POO 2 2- ,-PHOO - 、-SO 2 O - 、-B(OH)O - at least one of .

[0069] In the technical solution of the embodiment of the present application, the A group is a salt corresponding to the oxygen-containing acid group within the above range, and the self-assembled compound after connecting with the Ar group is electrically neutral as a whole.

[0070] The second technical solution adopted in this application is: to provide a perovskite solar cell 100, which includes a passivation material, and the passivation material includes a first sub-passivation material, and the first sub-passivation material is the self-assembled compound as described above.

[0071] In the technical solution of the embodiment of this application, using the self-assembled compound as the hole transport layer or doping it into the hole transport layer can not only transport holes, but also the Ar group can passivate the interface of the perovskite layer facing the hole transport layer. Or, using the self-assembled compound as the passivation layer between the hole transport layer and the perovskite, the A group can passivate the interface of the hole transport layer facing the perovskite layer, and at the same time, the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, which can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite battery.

[0072] It should be noted that the self-assembled compound provided in this application is applicable not only to the inverted perovskite solar cell, but also to the normal perovskite solar cell. The following takes the inverted perovskite solar cell as an example for introduction:

[0073] Refer to Figure 1 , the perovskite solar cell 100 includes a first electrode layer 12, a hole transport layer 13, a perovskite layer 11, an electron transport layer 14, and a second electrode layer 15 arranged in sequence.

[0074] The first electrode layer 12 includes but is not limited to the following materials: FTO, ITO, AZO, BZO, IZO, etc. The thickness of the first electrode layer 12 is 10-1000 nm, and it can be 10 nm, 55 nm, 103 nm, 358 nm, 480 nm, 650 nm, 890 nm, 1000 nm, etc., or a range composed of any two of the above values. For example, it can be 10-20 nm, 60-150 nm, 100-520 nm, 400-790 nm, 28-900 nm, 200-980 nm, etc.

[0075] The passivation material can be used as the hole transport layer 13 or doped into the hole transport layer 13, which can not only transport holes, but also passivate the interface of the perovskite layer 11 facing the hole transport layer 13.

[0076] When doping a passivation material into the hole transport layer 13, the hole transport layer 13 can be a metal oxide, and the metal oxide includes but is not limited to the following materials: nickel oxide, molybdenum oxide, tungsten oxide, etc. The thickness of the metal oxide is 10 - 100 nm, and can be 10 nm, 21 nm, 35 nm, 43 nm, 56 nm, 67 nm, 89 nm, 100 nm, etc., or a range composed of any two of the above values. For example, it can be 10 - 20 nm, 16 - 90 nm, 25 - 95 nm, 46 - 99 nm, 10 - 90 nm, 80 - 100 nm, etc.

[0077] The chemical formula of the perovskite layer 11 satisfies the general formula of perovskite solar cells ABX 3 or A 2 CDX 6 , where A, B, C, and D are different cations, and X is an anion. A includes inorganic or organic or organic - inorganic hybrid cations, and can be at least one of MA + , FA + , Cs + ; B includes inorganic or organic or organic - inorganic hybrid cations, and can be at least one of Pb 2+ , Sn 2+ ; C includes inorganic or organic or organic - inorganic hybrid cations, and is commonly Ag + , Cu + , Au + , FA + , GA + ; D includes inorganic or organic or organic - inorganic hybrid cations, and can be at least one of Bi 3+ , Sb 3+ , and In 3+ ; X includes inorganic or organic or organic - inorganic hybrid anions, and can be at least one of Cl - , Br - , I - .

[0078] In some embodiments, the band gap of the perovskite layer 11 is 1.20 - 2.30 eV.

[0079] In some embodiments, the thickness of the perovskite layer 11 is 200 - 1000 nm, and can be 200 nm, 280 nm, 350 nm, 358 nm, 480 nm, 650 nm, 890 nm, 1000 nm, etc., or a range composed of any two of the above values. For example, it can be 200 - 980 nm, 250 - 350 nm, 360 - 520 nm, 400 - 790 nm, 290 - 900 nm, 400 - 980 nm, etc.

[0080] The electron transport layer 14 includes at least one of the following materials and their derivatives and materials obtained by doping or passivation: [6,6]-phenyl C 61 methyl butyrate (PC 61 BM), [6,6]-phenyl C 71 methyl butyrate (PC 71 BM), fullerene C 60 (C 60 ), fullerene C 70 (C 70 ), tin dioxide (SnO 2 ), zinc oxide (ZnO), perylene diimide (PDI) materials, naphthalene diimide (NDI) materials, etc. The thickness of the electron transport layer 14 is 5 - 100 nm, and can be 5 nm, 24 nm, 33 nm, 42 nm, 57 nm, 65 nm, 91 nm, 100 nm, etc., or a range composed of any two of the above values. For example, it can be 5 - 20 nm, 16 - 90 nm, 23 - 95 nm, 45 - 99 nm, 10 - 90 nm, 80 - 99 nm, etc.

[0081] In some embodiments, the perovskite solar cell 100 may also not include the electron transport layer 14.

[0082] The material of the second electrode layer 15 is an organic or inorganic or organic-inorganic hybrid conductive material, including but not limited to the following materials: Ag, Cu, C, Au, Al, ITO, AZO, BZO, IZO, etc. The thickness of the second electrode layer 15 is 10 - 1000 nm, and can be 10 nm, 240 nm, 355 nm, 390 nm, 480 nm, 680 nm, 800 nm, 1000 nm, etc., or a range composed of any two of the above values. For example, it can be 10 - 980 nm, 210 - 350 nm, 340 - 530 nm, 410 - 790 nm, 240 - 900 nm, 400 - 980 nm, etc.

[0083] Referring to Figure 2 , there may also be a blocking layer 16 between the electron transport layer 14 and the second electrode layer 15. The valence band of the blocking layer 16 is relatively low, which can effectively block the transport of holes and reduce the energy loss caused by charge recombination. The blocking layer 16 includes but not limited to the following materials: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), SnO 2 , ZnO, CeO xetc. The thickness of the blocking layer 16 is 0.5 - 20 nm, and it can be 0.5 nm, 1.6 nm, 3.4 nm, 6.6 nm, 8.6 nm, 9.8 nm, 14.6 nm, 20 nm, etc., or a range composed of any two of the above values. For example, it can be 0.5 - 14.6 nm, 2.6 - 13.5 nm, 3.2 - 8.6 nm, 12 - 19.6 nm, 14.6 - 17.8 nm, 15.6 - 19 nm, etc.

[0084] When using the passivation material as the hole - transporting layer 13 or doping the passivation material into the hole - transporting layer 13, the self - assembled compound is dissolved in an organic solvent to form a self - assembled precursor solution, or mixed in the hole - transporting layer precursor solution, and is covered on the surface of the first electrode layer 12 by spin - coating, spraying, blade - coating, slot - die coating, or roll - to - roll printing. Or the first electrode layer 12 is immersed in the above - mentioned precursor solution, and the self - assembled compound self - assembles on the surface of the first electrode layer 12 to form a film layer. The solvent for dissolving the self - assembled compound can be methanol, isopropanol, ethanol, chlorobenzene, etc., and the concentration is 0.1 - 10 mg / mL. After the self - assembled compound is prepared on the surface of the first electrode layer 12, the solvent can be removed by annealing or in a vacuum.

[0085] Refer to Figure 3 , the perovskite solar cell 100 includes a first electrode layer 12, a hole - transporting layer 13, a passivation layer 10, a perovskite layer 11, an electron - transporting layer 14, and a second electrode layer 15 arranged in sequence.

[0086] The passivation layer 10 is disposed between the perovskite layer 11 and the hole - transporting layer 13, and is used to passivate the interface of the hole - transporting layer 13 facing the perovskite layer 11 and the interface of the perovskite layer 13 facing the hole - transporting layer 13.

[0087] The first electrode layer 12, the perovskite layer 11, the electron - transporting layer 14, and the second electrode layer 15 can refer to the content described above and will not be elaborated here.

[0088] The hole - transporting layer 13 can be a metal oxide, and the metal oxide includes but is not limited to the following materials: nickel oxide, molybdenum oxide, tungsten oxide, etc. The thickness of the metal oxide is 10 - 100 nm, and it can be 10 nm, 21 nm, 35 nm, 43 nm, 56 nm, 67 nm, 89 nm, 100 nm, etc., or a range composed of any two of the above values. For example, it can be 10 - 20 nm, 16 - 90 nm, 25 - 95 nm, 46 - 99 nm, 10 - 90 nm, 80 - 100 nm, etc.

[0089] In some embodiments, the perovskite solar cell 100 may also not include the electron - transporting layer 14.

[0090] When the passivation layer 10 is disposed between the perovskite layer 11 and the hole transport layer 13, the self-assembled compound is dissolved in an organic solvent to form a self-assembled precursor solution, which is coated on the surface of the hole transport layer 13 by means of spin coating, spraying, doctor blading, slot die coating, or roll-to-roll printing. Alternatively, the substrate having the hole transport layer 13 and the first electrode layer 12 is immersed in the self-assembled precursor solution, and the self-assembled compound self-assembles on the surface of the hole transport layer 13 to form a film layer. The solvent for dissolving the self-assembled compound can be methanol, isopropanol, ethanol, chlorobenzene, etc., and the concentration is 0.1-10 mg / mL. After the self-assembled compound is prepared on the surface of the hole transport layer 13, the solvent can be removed by annealing or vacuum.

[0091] Referring to Figure 4 , a blocking layer 16 may further exist between the electron transport layer 14 and the second electrode layer 15.

[0092] In some embodiments, the passivation material further includes a second sub-passivation material mixed with the first sub-passivation material, and the second sub-passivation material is a self-assembled compound different from the first sub-passivation material.

[0093] Using the first sub-passivation material and the second sub-passivation material mixed as the passivation material can reduce interface defects and, at the same time, reduce the cost of the perovskite solar cell 100.

[0094] The second sub-passivation material is a self-assembled compound different from the first sub-passivation material. The molecular structures of some self-assembled compounds of the second sub-passivation material are listed as follows:

[0095]

[0096] It should be noted that the second sub-passivation material is not limited to the above four. The second sub-passivation material can be a self-assembled compound prepared by oneself and different from the first sub-passivation material or a self-assembled compound purchased through commercial channels and different from the first sub-passivation material.

[0097] In some embodiments, the thickness of the passivation layer 10 is 0.1 - 5 nm. The thickness of the passivation layer can be 0.1 nm, 0.2 nm, 0.35 nm, 0.5 nm, 0.8 nm, 0.92 nm, 1.0 nm, 1.1 nm, 1.5 nm, 2.0 nm, 2.75 nm, 2.8 nm, 3.0 nm, 3.1 nm, 3.51 nm, 3.75 nm, 3.9 nm, 4.0 nm, 4.2 nm, 4.3 nm, 4.5 nm, 4.75 nm, 5 nm, etc., or a range composed of any two of the above values. For example, it can be 0.1 - 0.8 nm, 1.0 - 3.75 nm, 1.1 - 4.2 nm, 0.35 - 2.8 nm, 0.2 - 3.0 nm, 3.1 - 3.51 nm, 3.9 - 4.3 nm, 0.92 - 4.75 nm, 2.75 - 5 nm, etc. In the technical solution of the embodiment of the present application, when the thickness of the passivation layer 10 is within the above range, the passivation layer 10 can form a uniform film, has a suitable bandgap, good film-forming property, is easy to form a monolayer, can reduce interface defects, so that when the passivation layer 10 provided by the present application is applied to the perovskite solar cell 100, the photoelectric conversion efficiency and stability of the perovskite solar cell 100 can be improved.

[0098] The present application also provides a perovskite solar cell, which includes a hole transport layer, and the hole transport layer is the self-assembled compound described in any one of the above. In some embodiments, the thickness of the hole transport layer is 0.1 - 5 nm. Using the self-assembled compound as the hole transport layer can not only transport holes, but also the Ar group can passivate the interface of the perovskite layer facing the hole transport layer, can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell. In the technical solution of the embodiment of the present application, when the thickness of the hole transport layer is within the above range, the hole transport layer can form a uniform film, has a suitable bandgap, good film-forming property, is easy to form a monolayer, can reduce interface defects, thereby improving the photoelectric conversion efficiency and stability of the perovskite solar cell. The thickness of the hole transport layer can be 0.1 nm, 0.3 nm, 0.36 nm, 0.7 nm, 0.9 nm, 0.91 nm, 1.1 nm, 1.4 nm, 1.7 nm, 2.3 nm, 2.7 nm, 2.89 nm, 3.2 nm, 3.42 nm, 3.53 nm, 3.85 nm, 3.92 nm, 4.1 nm, 4.3 nm, 4.4 nm, 4.6 nm, 4.85 nm, 5 nm, etc., or a range composed of any two of the above values. For example, it can be 0.1 - 0.9 nm, 0.9 - 3.65 nm, 3.65 - 4.2 nm, 4.2 - 5 nm, etc.

[0099] Refer to Figure 5, this application also provides an electrical device 1000, including the perovskite solar cell 100 as described above.

[0100] In this application, the perovskite solar cell serves as the power source of the above-mentioned electrical device 1000 to supply power to it: alternatively, the perovskite solar cell 100 can serve as the energy storage unit of the above-mentioned electrical device 1000. Exemplarily, the electrical device 1000 can be a lighting element, a display element, a vehicle, etc.

[0101] This application also provides a power generation device, which includes the perovskite solar cell 100 as described above and can be used for power generation.

[0102] In order to make the technical problems, technical solutions, and beneficial effects solved by the embodiments of this application clearer, the following will be further described in detail in combination with the embodiments and the drawings. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and in no way constitutes a limitation on this application and its application. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.

[0103] Self-assembled compound application method 1:

[0104] The passivation material serves as the hole transport layer 13. The passivation material includes a first sub-passivation material or the passivation material includes a first sub-passivation material and a second sub-passivation material, and the first sub-passivation material is the self-assembled compound as described above.

[0105] Use the first sub-passivation material as the hole transport layer 13, or use the mixture of the first sub-passivation material and the second sub-passivation material as the hole transport layer 13. The self-assembled precursor solution is a solution in which the passivation material is dissolved. Refer to Figure 2 , including the following steps:

[0106] Step 1: Etch and clean the substrate of the first electrode layer 12, and dry it for standby;

[0107] Step 2: Cover the clean substrate of the first electrode layer 12 with the self-assembled precursor solution, and remove the solvent by annealing or vacuum to obtain a self-assembled compound layer, that is, the hole transport layer 13;

[0108] Step 3: Prepare the perovskite layer 11 on the hole transport layer 13, and set it aside;

[0109] Step 4: Prepare the electron transport layer 14 and the blocking layer 16 on the perovskite layer 11, and set it aside;

[0110] Step 5: Prepare the second electrode layer 15 on the electron transport layer 14, and perform edge cleaning and testing.

[0111] Self-assembled compound application method 2:

[0112] The passivation material is used to form a passivation layer 10 between the perovskite layer 11 and the hole transport layer 13. The hole transport layer 13 can be NiO x , the passivation material includes a first sub-passivation material or the passivation material includes a first sub-passivation material and a second sub-passivation material, and the first sub-passivation material is the self-assembled compound as described above.

[0113] Use the first sub-passivation material as the passivation layer 10, or use the mixture of the first sub-passivation material and the second sub-passivation material as the passivation layer 10. The self-assembled precursor solution is a solution in which the passivation material is dissolved. Refer to Figure 4 , including the following steps:

[0114] Step 1: Etch and clean the substrate of the first electrode layer 12, and dry it for standby;

[0115] Step 2: Cover NiO x on the clean substrate of the first electrode layer 12 to obtain NiO x film, that is, form the hole transport layer 13;

[0116] Step 3: Cover the self-assembled precursor solution on the hole transport layer 13, and remove the solvent by annealing or vacuum to obtain a self-assembled compound layer, that is, the passivation layer 10;

[0117] Step 4: Prepare the perovskite layer 11 on the passivation layer 10, and set it aside;

[0118] Step 5: Prepare the electron transport layer 14 and the blocking layer 16 on the perovskite layer 11, and set it aside;

[0119] Step 6: Prepare the second electrode layer 15 on the electron transport layer 14, and perform edge cleaning and testing.

[0120] Example 1

[0121] (1) Take 20 pieces of FTO conductive glass with a specification of 2.0 cm × 2.0 cm, and remove 0.35 cm of FTO from both ends by laser etching to expose the glass substrate.

[0122] (2) Ultrasonically clean the etched FTO conductive glass several times with water, acetone, and isopropanol in sequence.

[0123] (3) Dry the solvent of the FTO conductive glass with a nitrogen gun and put it into an ultraviolet ozone machine for further cleaning.

[0124] (4) A methanol solution (10 mg / mL) of nickel oxide nanoparticles (Xi'an Baolaitai Company) was spin-coated on the surface of FTO conductive glass at 2000 rpm, and the solvent was removed by vacuum or annealing to form a 30-nm-thick nickel oxide (NiOx) film.

[0125] (5) The self-assembled compound SAM1 was dissolved in methanol to obtain a self-assembled precursor solution (0.3 mg / mL). The self-assembled precursor solution was spin-coated on the surface of the nickel oxide film at 3000 rpm, and a 2.5-nm-thick self-assembled compound layer was obtained by vacuum pumping or annealing.

[0126] Among them, the preparation method of the self-assembled compound SAM1 is as follows:

[0127] Process 1: Compound 1 (1 mmol) was dissolved in N,N-dimethylformamide (DMF, 10 mL), and the temperature was lowered to 0 °C. Di-tert-butyl dicarbonate (Boc 2 O, 3.6 mmol) was slowly added dropwise to the solution. After reacting for 24 h, it was separated by a silica gel chromatography column to obtain Compound 2 with a yield of about 75%. The 1H NMR spectrum of Compound 2 was: 1H NMR (400 MHz, DMSO-d 6 ) δ 11.66 (s, 1H), 9.88 (s, 2H), 7.83 - 7.78 (m, 4H), 7.68 (d, J = 7.2 Hz, 2H), 1.49 (s, 18H).

[0128]

[0129] Process 2: Compound 2 (1 mmol), Compound 3 (8 mL), 50% aqueous potassium hydroxide solution (KOH(aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol) were mixed together. After heating at 70 °C for 20 hours under nitrogen protection, it was separated by a silica gel chromatography column to obtain Compound 4 with a yield of about 83%. The 1H NMR spectrum of Compound 4 was measured as: 1H NMR (400 MHz, DMSO-d 6) δ 9.88 (s, 2H), 7.95 (s, 2H), 7.83 - 7.78 (d, J = 7.2 Hz, 2H), 7.68 (d, J = 7.2 Hz, 2H), 4.18 - 4.14 (m, 2H), 3.16 - 3.13 (m.2H), 1.82 - 1.74 (m, 4H), 1.49 (s, 18H).

[0130]

[0131] Process 3: Compound 4 (0.8 mmol), triethyl phosphite (P(OEt) 3, 10 mL) were blended. After heating at 180 °C for 12 hours under nitrogen protection, triethyl phosphite was removed by vacuum distillation. The crude product was blended with tributylbromosilane (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). After stirring at room temperature for 20 hours under nitrogen protection, the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours, then deionized water (1 mL) was added to precipitate solid powder. After filtration, it was dissolved in ethanol, and 55% hydroiodic acid aqueous solution (1 mL) was added dropwise. After stirring for 3 h, 200 mL of ether was added and filtered to obtain SAM1 with a yield of about 45%. The proton nuclear magnetic resonance spectrum of SAM1 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.31 (s, 6H), 7.46 (d, J = 7.2 Hz, 2H), 7.10 (s, 2H), 6.86 (d, J = 7.2 Hz, 2H), 4.18 - 4.15 (m, 2H), 1.74 - 1.66 (m, 4H), 1.28 - 1.24 (m, 2H).

[0132]

[0133] (6) Preparation of perovskite layer: Lead iodide (726 mg), formamidinium iodide (240 mg), cesium iodide (19 mg), and lead bromide (11 mg) were weighed and dissolved in 1 mL of a mixed solution of DMF and DMSO (volume ratio 4:1). After stirring for 3 h, it was filtered through a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. The perovskite precursor solution was spin-coated on the obtained self-assembled compound layer at 3000 rpm / s and annealed at 100 °C for 30 min, then cooled to room temperature. The active substance of the perovskite layer was the CsFA system.

[0134] (7) On the perovskite layer, a 30-nm-thick electron transport layer PC 61 BM ([6,6]-phenyl-C 61 -butyric acid methyl ester) was spin-coated at 1500 rpm / s and annealed at 100 °C for 10 min. Immediately thereafter, a 5-nm-thick hole blocking layer BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) was spin-coated at 5000 rpm / s.

[0135] (8) The obtained substrate was placed in an evaporation coater to evaporate a metal electrode Cu with a thickness of 100 nm, and the obtained battery device was labeled as Battery 1.

[0136] Example 2

[0137] Same as Example 1, except that self-assembled compound SAM2 was used in step (5). The obtained battery device was labeled as Battery 2.

[0138] ​Among them, the preparation method of the self-assembled compound SAM2 is as follows:

[0139] Process 1: Process 1 of Example 2 is the same as Process 1 of Example 1.

[0140] Process 2: Mix compound 2 (1 mmol), potassium carbonate (K 2 CO 3 , 1.5 mmol), copper(I) iodide (CuI, 2 mmol), compound 5 (1.1 mmol), and DMF (10 mL). After heating at 125 °C for 20 hours under nitrogen protection, separate by silica gel chromatography column to obtain compound 6 with a yield of about 83%. The 1H NMR spectrum of compound 6 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.88 (s, 2H), 8.08 (s, 2H), 7.88 (d, J = 7.2 Hz, 2H), 7.68 (d, J = 7.2 Hz, 2H), 7.49 (d, J = 7.2 Hz, 2H), 7.29 (d, J = 7.2 Hz, 2H), 3.66 - 3.61 (m, 2H), 3.08 - 3.03 (m, 2H), 1.49 (s, 18H).

[0141]

[0142] Process 3: Process 3 of Example 2 is similar to Process 3 of Example 1, where compound 4 is replaced by compound 6. After reaction treatment, SAM2 is obtained with a yield of about 35%. The 1H NMR spectrum of SAM2 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.31 (s, 6H), 8.08 (s, 2H), 7.88 (d, J = 7.2 Hz, 2H), 7.68 (d, J = 7.2 Hz, 2H), 7.49 (d, J = 7.2 Hz, 2H), 7.29 (d, J = 7.2 Hz, 2H), 2.83 - 2.79 (m, 2H), 2.03 - 2.00 (m, 2H).

[0143]

[0144] Example 3

[0145] Same as Example 1, but in step (5), the self-assembled compound SAM3 is used. The obtained battery device is labeled as Battery 3.

[0146] Among them, the preparation method of the self-assembled compound SAM3 is as follows:

[0147] Similar to the synthesis in Example 1, the differences are as follows:

[0148] Process 1: Replace compound 1 in Example 1 with compound 7. After the reaction, purify to obtain compound 8 with a yield of approximately 75%. The 1H NMR spectrum of compound 8 is as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 11.66 (s, 1H), 9.86 (s, 2H), 8.97 (d, J = 7.2 Hz, 2H), 8.12 (d, J = 7.2 Hz, 2H), 7.59 - 7.50 (m, 4H), 6.71 (s, 2H), 1.49 (s, 18H).

[0149]

[0150] Process 2: Replace compound 2 in Example 1 with compound 8. After the reaction, purify to obtain compound 9 with a yield of approximately 84%. The 1H NMR spectrum of compound 9 is measured as: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.86 (s, 2H), 8.97 (d, J = 7.2 Hz, 2H), 8.12 (d, J = 7.2 Hz, 2H), 7.59 - 7.50 (m, 4H), 6.59 (s, 2H), 4.18 - 4.14 (m, 2H), 3.54 - 3.50 (m, 2H), 1.82 - 1.74 (m, 4H), 1.49 (s, 18H).

[0151]

[0152] Process 3: Replace compound 4 in Example 1 with compound 9. After reaction treatment, obtain SAM3 with a yield of approximately 45%. The 1H NMR spectrum of SAM3 is measured as: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.97 (d, J = 7.2 Hz, 2H), 8.31 (s, 6H), 8.12 (d, J = 7.2 Hz, 2H), 7.59 (d, J = 7.2 Hz, 2H), 7.28 (d, J = 7.2 Hz, 2H), 7.02 (s, 2H), 4.18 - 4.14 (m, 2H), 1.73 - 1.69 (m, 4H), 1.26 - 1.23 (m, 2H).

[0153]

[0154] Example 4

[0155] Same as Example 1, except that in step (5), self-assembled compound SAM4 is used. The obtained battery device is labeled as Battery 4.

[0156] Among them, the preparation method of the self-assembled compound SAM4 is as follows:

[0157] Similar to the synthesis in Example 1, the differences are as follows:

[0158] Process 1: Replace compound 1 in Example 1 with compound 10. After the reaction and purification, compound 11 is obtained with a yield of about 77%. The 1H NMR spectrum of compound 11 is as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.88 (s, 2H), 7.48 (d, J = 7.2 Hz, 4H), 7.28 (d, J = 7.2 Hz, 4H), 7.22 (s, 2H), 1.49 (s, 18H).

[0159]

[0160] Process 2: Mix compound 11 (1 mmol), sodium tert-butoxide (t-BuONa, 2 mmol), tris(dibenzylideneacetone)dipalladium (Pd 2 (dba) 3 , 5% mmol), tert-butylphosphine (t-Bu 3 P, 10% mmol), compound 5 (1.5 mmol), and toluene (10 mL). After heating at 110 °C for 20 hours under nitrogen protection, it is separated by a silica gel chromatography column to obtain compound 12 with a yield of about 78%. The 1H NMR spectrum of compound 12 is measured as: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.88 (s, 2H), 7.48 (d, J = 7.2 Hz, 4H), 7.28 (d, J = 7.2 Hz, 4H), 7.18 (d, J = 7.2 Hz, 2H), 7.03 (d, J = 7.2 Hz, 2H), 3.66 - 3.60 (m, 2H), 2.96 - 2.90 (m, 2H), 1.49 (s, 18H).

[0161]

[0162] Process 3: Replace compound 4 in Example 1 with compound 12. After reaction treatment, SAM4 is obtained with a yield of about 45%. The 1H NMR spectrum of SAM4 is measured as: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.33 (s, 6H), 7.18 (d, J = 7.2 Hz, 6H), 7.03 (d, J = 7.2 Hz, 2H), 6.96 (d, J = 7.6 Hz, 4H), 2.69 - 2.62 (m, 2H), 2.03 - 1.97 (m, 2H).

[0163] Example 5

[0164] Same as Example 1, except that in step (5), self-assembled small molecule SAM5 is used. The obtained battery device is labeled as Battery 5.

[0165] Among them, the preparation method of the self-assembled compound SAM5 is as follows:

[0166] Process 1: Blend Compound 13 (1 mmol), Compound 3 (8 mL), 50% aqueous potassium hydroxide solution (KOH(aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol). After heating at 70 °C for 20 hours under nitrogen protection, separate it through a silica gel chromatography column to obtain Compound 14, with a yield of about 86%. The 1H NMR spectrum of Compound 14 was measured as: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.86 (s, 2H), 7.71 (d, J = 7.2 Hz, 2H), 7.29 (d, J = 7.2 Hz, 2H), 4.18 - 4.14 (m, 2H), 3.54 - 3.50 (m, 2H), 1.82 - 1.74 (m, 4H).

[0167]

[0168] Process 2: Blend Compound 14 (1 mmol) and triethyl phosphite (P(OEt) 3 , 10 mL). After heating at 180 °C for 12 hours under nitrogen protection, remove triethyl phosphite by vacuum distillation. Blend the crude product with tributylbromosilane (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). After stirring at room temperature for 20 hours under nitrogen protection, remove the solvent. Add methanol (5 mL) and stir for 12 hours, then add deionized water (1 mL). A solid powder precipitates. After filtration, obtain Compound 15, with a yield of about 55%. The 1H NMR spectrum of Compound 15 was measured as: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.86 (s, 2H), 7.71 (d, J = 7.2 Hz, 2H), 7.29 (d, J = 7.2 Hz, 2H), 4.18 - 4.14 (m, 2H), 1.73 - 1.69 (m, 4H), 1.26 - 1.23 (m, 2H).

[0169]

[0170] Process 3: Blend Compound 15 (1 mmol), triphenylphosphine (3.6 mmol), potassium hydroxide (KOH, 5 mmol), and nickel bromide (NiBr 2, (10% mmol) was dissolved in DMF (15 mL). After stirring for 24 h, it was filtered through diatomaceous earth. The filtrate was poured into ether to produce a precipitate. After filtration, SAM5 was obtained. The 1H NMR spectrum of SAM5 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.77 (d, J = 7.2 Hz, 2H), 7.42 - 7.33 (m, 34H), 4.18 - 4.14 (m, 2H), 1.73 - 1.69 (m, 4H), 1.26 - 1.23 (m, 2H).

[0171]

[0172] Example 6

[0173] Same as Example 1, except that in step (5), the self-assembled small molecule SAM6 was used. The obtained battery device was labeled as Battery 6.

[0174] Among them, the preparation method of the self-assembled compound SAM6 is as follows:

[0175] Process 1: Compound 16 (1 mmol) and triethyl phosphite (P(OEt) 3 , 10 mL) were blended. After heating at 180 °C for 12 h under nitrogen protection, triethyl phosphite was removed by vacuum distillation. The crude product was blended with tributyl bromosilane (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). After stirring at room temperature for 20 h under nitrogen protection, the solvent was removed. Methanol (5 mL) was added and stirred for 12 h. Deionized water (1 mL) was added, and a solid powder was precipitated. After filtration, Compound 17 was obtained with a yield of about 55%. The 1H NMR spectrum of Compound 17 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.38 (d, J = 7.2 Hz, 4H), 7.18 (d, J = 7.2 Hz, 2H), 7.10 - 7.00 (m, 6H), 2.68 - 2.64 (m, 2H), 2.06 - 2.03 (m, 2H).

[0176]

[0177] Process 2: Compound 17 (1 mmol), triphenylphosphine (3.6 mmol), potassium hydroxide (KOH, 5 mmol), nickel bromide (NiBr 2, (10% mmol) was dissolved in DMF (15 mL). After stirring for 24 h, it was filtered through diatomaceous earth. The filtrate was poured into ether to form a precipitate. After filtration, a white solid was obtained. Subsequently, it was passed through an ion exchange column of potassium thiocyanate (KSCN). After removing the solvent, SAM6 was obtained with a yield of 28%. The 1H NMR spectrum of SAM6 was measured as follows: 1H NMR (400 MHz, DMSO-6) δ 7.77 (d, J = 7.2 Hz, 2H), 7.49 - 7.29 (m, 38H), 2.83 - 2.79 (m, 2H), 2.04 - 2.00 (m, 2H).

[0178]

[0179] Example 7

[0180] Same as Example 1, except that in step (5), self-assembled small molecule SAM7 was used. The obtained battery device was labeled as Battery 7.

[0181] Among them, the preparation method of the self-assembled compound SAM7 is as follows:

[0182] Process 1: Compound 18 (1 mmol), Compound 19 (1.1 mmol), and KOH (3 mmol) were dissolved in DMF (10 mL). After heating at 145 °C for 24 h, the supernatant was taken and poured into 200 mL of ether. The precipitated solid was recrystallized with ethanol to obtain SAM7 with a yield of about 35%. The 1H NMR spectrum of SAM7 was obtained as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.22 (d, J = 7.2 Hz, 2H), 7.15 (d, J = 7.2 Hz, 6H), 7.02 (d, J = 7.2 Hz, 4H), 3.72 (s, 18H), 2.84 - 2.80 (m, 2H), 2.04 - 1.99 (m, 2H).

[0183]

[0184] Example 8

[0185] Same as Example 1, except that in step (5), self-assembled small molecule SAM8 was used. The obtained battery device was labeled as Battery 8.

[0186] Among them, the preparation method of the self-assembled compound SAM8 is as follows:

[0187] Similar to the synthesis in Example 1, the difference is that:

[0188] Process 1: Replace compound 1 in Example 1 with compound 20, and after the reaction, purify to obtain compound 21 with a yield of approximately 64%. The 1H NMR spectrum of compound 21 is as follows: 1H NMR (400 MHz, DMSO-d6) δ 10.64 (s, 1H), 9.88 (s, 2H), 7.70 (s, 2H), 7.38 (d, J = 7.2 Hz, 2H), 7.27 (d, J = 7.2 Hz, 2H), 1.69 (s, 6H), 1.49 (s, 18H).

[0189]

[0190] Process 2: Replace compound 2 in Example 1 with compound 21, and after the reaction, purify to obtain compound 22 with a yield of approximately 71%. The measured 1H NMR spectrum of compound 22 is as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.88 (s, 2H), 7.70 (s, 2H), 7.38 (d, J = 7.2 Hz, 2H), 7.27 (d, J = 7.2 Hz, 2H), 4.18 - 4.14 (m, 2H), 3.54 - 3.50 (m, 2H), 1.82 - 1.74 (m, 4H), 1.69 (s, 6H), 1.49 (s, 18H).

[0191]

[0192] Process 3: Blend 22 (1 mmol) and triethyl phosphite (P(OEt) 3 , 10 mL), heat at 180 °C for 12 hours under nitrogen protection, then remove triethyl phosphite by vacuum distillation. Blend the crude product with tributylbromosilane (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL), stir at room temperature for 20 hours under nitrogen protection, then remove the solvent. Add methanol (5 mL) and stir for 12 hours, then add deionized water (1 mL) to precipitate a solid powder. Subsequently, dissolve the solid powder in DMF (10 mL), add bromoethane (3 mmol), K 2 CO 3 (2 mmol), stir for 24 h, then pour the supernatant into ether to precipitate a solid powder, which is SAM8. The measured 1H NMR spectrum of SAM8 is as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.17 (d, J = 7.2 Hz, 2H), 6.86 (d, J = 7.2 Hz, 4H), 3.95 - 3.91 (m, 2H), 3.30 - 3.26 (m, 12H), 1.66 - 1.49 (m, 4H), 1.28 - 1.24 (m, 20H).

[0193]

[0194] Example 9

[0195] Same as Example 1, except that in step (5), the self-assembled small molecule SAM9 is used. The obtained battery device is labeled as Battery 9.

[0196] Among them, the preparation method of the self-assembled compound SAM9 is as follows:

[0197] Similar to the synthesis in Example 1, the differences are as follows:

[0198] Process 1: Compound 1 in Example 1 is replaced with Compound 23. After the reaction, Compound 24 is obtained by purification, and the yield is about 75%. The 1H NMR spectrum of Compound 24 is: 1H NMR (400 MHz, DMSO-d 6 ) δ 11.12 (s, 1H), 8.18 (s, 2H), 6.75 (s, 2H), 4.51 (s, 4H), 1.42 (s, 18H).

[0199] Process 2: Compound 2 in Example 1 is replaced with Compound 24. After the reaction, Compound 25 is obtained by purification, and the yield is about 84%. The measured 1H NMR spectrum of Compound 25 is: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.18 (s, 2H), 6.75 (s, 2H), 4.51 (s, 4H), 4.18 - 4.14 (m, 2H), 3.56 - 3.51 (m, 2H), 1.82 - 1.74 (m, 4H), 1.42 (s, 18H).

[0200]

[0201] Process 3: Compound 3 in Example 1 is replaced with Compound 25. After the reaction treatment, SAM9 is obtained, and the yield is about 28%. The measured 1H NMR spectrum of SAM9 is: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.31 (s, 6H), 6.75 (s, 2H), 4.86 (s, 4H) 4.18 - 4.14 (m, 2H), 1.73 - 1.69 (m, 4H), 1.26 - 1.23 (m, 2H).

[0202]

[0203] Example 10

[0204] Same as Example 1, except that in step (5), the self-assembled small molecule SAM10 is used. The obtained battery device is labeled as Battery 10.

[0205] Among them, the preparation method of the self-assembled compound SAM10 is as follows:

[0206] Process 1: Blend compound 26 (1 mmol) and triethyl phosphite (P(OEt) 3 , 10 mL), heat at 180 °C for 12 hours under nitrogen protection, then remove triethyl phosphite by vacuum distillation. Blend the crude product with tributylbromosilane (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL), stir at room temperature for 20 hours under nitrogen protection, then remove the solvent. Add methanol (5 mL), stir for 12 hours, then add deionized water (1 mL). A solid powder precipitates. After filtration, it is dissolved in ethanol, 55% aqueous hydroiodic acid solution (1 mL) is added dropwise, stirred for 3 h, then 200 mL of ether is added and filtered to obtain SAM10 with a yield of about 45%. The 1H NMR spectrum of SAM10 is as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.31 (s, 6H), 7.36 (s, 2H), 7.25 (s, 3H), 4.86 (s, 4H), 4.07 - 4.03 (m, 2H), 1.99 - 1.95 (m, 2H), 1.67 - 1.63 (m, 2H).

[0207]

[0208] Example 11

[0209] Same as Example 1, except that the self-assembled small molecule SAM11 is used in step (5). The obtained battery device is labeled as Battery 11.

[0210] Among them, the preparation method of the self-assembled compound SAM11 is as follows:

[0211] Process 1: Dissolve compound 27 (1 mmol) in N,N-dimethylformamide (DMF, 10 mL), lower the temperature to 0 °C, and slowly add di-tert-butyl dicarbonate (Boc 2 O, 3.6 mmol) dropwise to the solution. After reacting for 24 h, separate to obtain compound 28 by silica gel column chromatography with a yield of about 77%. The 1H NMR spectrum of compound 28 is as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 11.66 (s, 1H), 9.86 (s, 2H), 8.97 (d, J = 7.2 Hz, 2H), 8.12 (d, J = 7.2 Hz, 2H), 7.59 - 7.50 (m, 4H), 6.71 (s, 2H), 1.49 (s, 18H).

[0212]

[0213] Process 2: Dissolve compound 28 (1 mmol) in tetrahydrofuran (10 mL). Dropwise add n-butyllithium (2.5 M, 0.5 mL) at -78 °C. After stirring at low temperature for 2 h, dropwise add compound 29 (1.3 mmol). After reacting for 12 h, pour the reaction mixture into 50 mL of water and extract with dichloromethane (3 × 50 mL). The crude product obtained after removing the solvent is dissolved in tetrahydrofuran (5 mL), and 55% aqueous hydroiodic acid solution (0.5 mL) is dropwise added. After reacting for 5 h, pour the reaction mixture into ether (200 mL), and filter the solid to obtain SAM11 with a yield of about 44%. The 1H NMR spectrum of SAM11 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.71 (d, J = 7.2 Hz, 2H), 7.23 - 7.16 (m, 12H), 6.96 (d, J = 7.2 Hz, 4H).

[0214]

[0215] Example 12

[0216] Same as Example 1, except that in step (5), self-assembled small molecule SAM12 was used. The obtained battery device was labeled as Battery 12.

[0217] Among them, the preparation method of the self-assembled compound SAM12 is as follows:

[0218] Similar to the synthesis in Example 4, the differences are as follows:

[0219] Process 2: Replace compound 5 in Example 4 with compound 30. After the reaction, the product was purified to obtain compound 31 with a yield of about 84%. The 1H NMR spectrum of compound 31 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.88 (s, 2H), 8.42 (d, J = 7.2 Hz, 1H), 7.97 (d, J = 7.2 Hz, 1H), 7.55 (d, J = 7.2 Hz, 2H), 7.48 (d, J = 7.2 Hz, 2H), 7.37 (d, J = 7.2 Hz, 4H), 7.28 (d, J = 7.2 Hz, 4H), 6.59 (s, 2H), 4.33 - 4.26 (m, 2H), 1.49 (s, 18H), 1.33 - 1.27 (m, 3H).

[0220]

[0221] Procedure 3: Add 31 (1 mmol) of the compound, tetrahydrofuran (THF, 5 mL), ethanol (EtOH, 3 mL), and sodium hydroxide solution (2 M, 5 mL). After heating and reacting for 20 h, add aqueous hydroiodic acid solution (3 mL) of 55% to acidify, filter the precipitate to obtain SAM12, with a yield of approximately 85%. The proton nuclear magnetic resonance spectrum of SAM12 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 12.75 (s, 1H), 8.58 (d, J = 7.2 Hz, 1H), 8.07 (d, J = 7.2 Hz, 1H), 7.55 (d, J = 7.2 Hz, 2H), 7.37 (d, J = 7.2 Hz, 2H), 7.25 - 7.16 (m, 12H), 6.90 (d, J = 7.2 Hz, 4H).

[0222]

[0223] Example 13

[0224] Same as Example 1, except that in step (5), self-assembled small molecule SAM13 was used. The obtained battery device was labeled as Battery 13.

[0225] Among them, the preparation method of the self-assembled compound SAM13 is as follows:

[0226] Similar to the synthesis in Example 12, the differences are as follows:

[0227] Procedure 2: Replace compound 30 in Example 12 with compound 32. After the reaction, compound 33 was purified to obtain a yield of approximately 82%. The proton nuclear magnetic resonance spectrum of compound 33 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.88 (s, 2H), 7.84 (d, J = 7.2 Hz, 2H), 7.48 (d, J = 7.2 Hz, 4H), 7.37 (d, J = 7.2 Hz, 2H), 7.28 (d, J = 7.2 Hz, 4H), 6.99 (d, J = 7.2 Hz, 2H), 4.38 - 4.31 (m, 2H), 1.49 (s, 18H), 1.37 - 1.29 (m, 3H).

[0228]

[0229] Procedure 3: Replace compound 31 in Example 12 with compound 33. After the reaction, SAM13 was purified to obtain a yield of approximately 84%. The proton nuclear magnetic resonance spectrum of SAM13 was measured as follows: 1H NMR (400 MHz, DMSO-d 6)δ 13.40 (s, 1H), 8.03 - 7.98 (m, 2H), 7.37 (d, J = 7.2 Hz, 2H), 7.23 - 7.15 (m, 10H), 7.01 - 6.93 (m, 6H).

[0230]

[0231] Example 14

[0232] Same as Example 1, except that in step (5), self-assembled small molecule SAM14 was used. The obtained battery device was labeled as Battery 14.

[0233] Among them, the preparation method of the self-assembled compound SAM14 is as follows:

[0234] Similar to the synthesis in Example 4, the differences are as follows:

[0235] Process 2: Compound 5 in Example 4 was replaced with Compound 34, and after reaction and purification, Compound 35 was obtained with a yield of about 84%. The 1H NMR spectrum of Compound 35 was measured as: 1H NMR (400 MHz, DMSO-d 6 )δ 9.88 (s, 2H), 7.48 (d, J = 7.2 Hz, 4H), 7.32 - 7.22 (m, 5H), 6.87 - 6.82 (m, 1H), 3.66 - 3.60 (m, 2H), 2.96 - 2.90 (m, 2H), 1.49 (s, 18H).

[0236]

[0237] Process 3: Compound 12 in Example 4 was replaced with Compound 35, and after reaction treatment, SAM14 was obtained with a yield of about 25%. The 1H NMR spectrum of SAM14 was measured as: 1H NMR (400 MHz, DMSO-d 6 )δ 7.32 - 7.20 (m, 11H), 6.96 (d, J = 7.2 Hz, 4H), 6.87 - 6.78 (m, 1H), 2.71 - 2.67 (m, 4H), 2.03 - 1.99 (m, 2H).

[0238]

[0239] Example 15

[0240] Same as Example 1, except that in step (5), self-assembled small molecule SAM15 was used. The obtained battery device was labeled as Battery 15.

[0241] Among them, the preparation method of the self-assembled compound SAM15 is as follows:

[0242] Similar to the synthesis in Example 12, the difference is as follows:

[0243] Process 2: Replace compound 30 in Example 12 with compound 36. After the reaction, compound 37 was obtained by purification with a yield of about 82%. The 1H NMR spectrum of compound 37 is as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 9.88 (s, 2H), 8.21 (s, 2H), 8.02 (d, J = 7.2 Hz, 2H), 7.80 - 7.75 (m, 4H), 7.67 (d, J = 7.2 Hz, 2H), 7.55 (d, J = 7.2 Hz, 2H), 7.48 (d, J = 7.2 Hz, 4H), 7.37 (d, J = 7.2 Hz, 2H), 7.28 (d, J = 7.2 Hz, 4H), 4.32 - 4.28 (m, 2H), 1.49 (s, 18H), 1.33 - 1.29 (m, 3H).

[0244]

[0245] Process 3: Replace compound 31 in Example 12 with compound 37. After the reaction, SAM15 was obtained by purification with a yield of about 89%. The 1H NMR spectrum of SAM15 was measured as follows: 1H NMR (400 MHz, DMSO-d 6) δ 12.71 (s, 1H), 8.21 (s, 2H), 8.01 (d, J = 7.2 Hz, 2H), 7.85 - 7.80 (m, 4H), 7.67 (d, J = 7.2 Hz, 2H), 7.39 - 7.33 (m, 6H), 7.23 (s, 6H), 7.00 - 6.96 (m, 4H).

[0246]

[0247] Example 16

[0248] Same as Example 1, except that in step (5), the self-assembled small molecule SAM16 was used. The obtained battery device was labeled as Battery 16.

[0249] Among them, the preparation method of the self-assembled compound SAM16 is as follows:

[0250] Dissolve compound 38 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL). After the reaction, the solution was poured into diethyl ether and the precipitate was filtered to obtain SAM16 with a yield of about 85%. The 1H NMR spectrum of SAM16 was measured as follows: 1H NMR (400 MHz, DMSO-d 6)δ8.31 (s, 3H), 7.05 (s, 4H), 3.69 - 3.63 (m, 2H), 3.31 - 3.27 (m, 2H), 2.83 - 2.79 (m, 2H), 2.03 - 1.98 (m, 2H).

[0251]

[0252] Example 17

[0253] Same as Example 1, except that in step (5), self-assembled small molecule SAM17 was used. The obtained battery device was labeled as Battery 17.

[0254] Among them, the preparation method of the self-assembled compound SAM17 is as follows:

[0255] Dissolve compound 39 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL), pour the reaction solution into diethyl ether and filter the precipitate to obtain SAM17, with a yield of about 78%. The 1H NMR spectrum of SAM17 was measured as: 1H NMR (400 MHz, DMSO-d 6 )δ8.33 (s, 3H), 7.93 (d, J = 7.2 Hz, 2H), 7.61 - 7.57 (m, 2H), 6.96 (d, J = 7.2 Hz, 2H), 3.75 - 3.71 (m, 2H), 3.70 - 3.65 (m, 2H), 3.27 - 3.23 (m, 2H), 2.05 - 1.99 (m, 2H).

[0256]

[0257] Example 18

[0258] Same as Example 1, except that in step (5), self-assembled small molecule SAM18 was used. The obtained battery device was labeled as Battery 18.

[0259] Among them, the preparation method of the self-assembled compound SAM18 is as follows:

[0260] Dissolve compound 40 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL), pour the reaction solution into diethyl ether and filter the precipitate to obtain SAM18, with a yield of about 78%. The 1H NMR spectrum of SAM18 was measured as: 1H NMR (400 MHz, DMSO-d 6)δ 8.32 (s, 3H), 7.78 (d, J = 7.2 Hz, 2H), 7.54 (s, 2H), 7.40 (d, J = 7.2 Hz, 2H), 3.67 - 3.62 (m, 2H), 3.43 - 3.37 (m, 2H), 2.97 - 2.93 (m, 2H), 2.03 - 1.98 (m, 2H).

[0261]

[0262] Example 19

[0263] Same as Example 1, except that in step (5), self-assembled small molecule SAM19 was used. The obtained battery device was labeled as Battery 19.

[0264] Among them, the preparation method of the self-assembled compound SAM19 is as follows:

[0265] Dissolve compound 41 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL), pour the reaction solution into diethyl ether and filter the precipitate to obtain SAM19, with a yield of about 87%. The 1H NMR spectrum of SAM19 was measured as: 1H NMR (400 MHz, DMSO-d 6 )δ 8.37 (s, 3H), 6.85 - 6.80 (m, 2H), 4.86 (s, 2H), 3.11 - 3.05 (m, 2H), 1.95 - 1.90 (m, 2H).

[0266]

[0267] Example 20

[0268] Same as Example 1, except that in step (5), self-assembled small molecule SAM20 was used. The obtained battery device was labeled as Battery 20.

[0269] Among them, the preparation method of the self-assembled compound SAM20 is as follows:

[0270] Dissolve compound 42 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL), pour the reaction solution into diethyl ether and filter the precipitate to obtain SAM20, with a yield of about 65%. The 1H NMR spectrum of SAM20 was measured as: 1H NMR (400 MHz, DMSO-d 6 )δ 8.31 (s, 3H), 6.79 (s, 2H), 3.59 - 3.53 (m, 4H), 3.11 - 3.07 (m, 2H), 1.93 - 1.89 (m, 2H).

[0271]

[0272] Example 21

[0273] Same as Example 1, except that in step (5), self-assembled small molecule SAM21 is used. The resulting battery device is labeled as Battery 21.

[0274] Among them, the preparation method of the self-assembled compound SAM21 is as follows:

[0275] Dissolve compound 43 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL), pour the reaction solution into diethyl ether and filter the precipitate to obtain SAM21, with a yield of about 88%. The 1H NMR spectrum of SAM21 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 7.77 (d, J = 7.2 Hz, 2H), 7.62 (d, J = 7.2 Hz, 2H), 7.32 - 7.28 (m, 5H), 7.19 (d, J = 7.2 Hz, 2H), 7.05 (s, 4H), 2.83 - 2.79 (m, 2H), 2.03 - 1.98 (m, 2H).

[0276]

[0277] Example 22

[0278] Same as Example 1, except that in step (5), self-assembled small molecule SAM22 is used. The resulting battery device is labeled as Battery 22.

[0279] Among them, the preparation method of the self-assembled compound SAM22 is as follows:

[0280] Dissolve compound 44 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL), pour the reaction solution into diethyl ether and filter the precipitate to obtain SAM22, with a yield of about 57%. The 1H NMR spectrum of SAM22 was measured as follows: 1H NMR (400 MHz, DMSO-d6) δ 8.33 (s, 3H), 7.47 - 7.44 (m, 2H), 6.87 - 6.84 (m, 2H), 4.86 (s, 2H), 3.09 - 3.03 (m, 2H), 1.95 - 1.90 (m, 2H).

[0281]

[0282] Example 23

[0283] Same as Example 1, except that in step (5), self-assembled small molecule SAM23 is used. The resulting battery device is labeled as Battery 23.

[0284] Among them, the preparation method of the self-assembled compound SAM23 is as follows:

[0285] Dissolve compound 45 (1 mmol) in THF (5 mL), slowly add dropwise 55% aqueous hydroiodic acid solution (1 mL). After the reaction, pour the solution into diethyl ether and filter the precipitate to obtain SAM23 with a yield of about 75%. The 1H NMR spectrum of SAM23 was measured as follows: 1H NMR (400 MHz, DMSO-d 6 ) δ 8.31 (s, 3H), 7.77 (d, J = 7.2 Hz, 2H), 7.34 - 7.28 (m, 3H), 6.83 (d, J = 7.2 Hz, 2H), 4.89 - 4.83 (m, 2H), 2.83 - 2.79 (m, 2H), 2.03 - 1.98 (m, 2H).

[0286]

[0287] Example 24

[0288] Same as Example 1, but step (4) is removed, and the self-assembled compound SAM1 is set on the FTO surface to obtain a battery device labeled as Battery 24.

[0289] Example 25

[0290] Same as Example 6, but step (4) is removed, and the self-assembled compound SAM6 is set on the FTO surface to obtain a battery device labeled as Battery 25.

[0291] Example 26

[0292] Same as Example 10, but step (4) is removed, and the self-assembled compound SAM10 is set on the FTO surface to obtain a battery device labeled as Battery 26.

[0293] Example 27

[0294] Same as Example 1, but in step (5), the self-assembled compound SAM1 and 4PACz (4-(9-carbazolyl)butylphosphonic acid, mass ratio 1:1) are co-dissolved in methanol (total concentration of 0.3 mg / mL) to prepare a mixed self-assembled compound thin film, and a battery device labeled as Battery 27 is obtained.

[0295] Comparative Example 1

[0296] Same as Example 1, but in step (5), the self-assembled compound SAM1 is not spin-coated. A battery device labeled as Battery 28 is obtained.

[0297] Comparative Example 2

[0298] Same as Example 1, but in step (5), the self-assembled compound 4PACz is used. A battery device labeled as Battery 29 is obtained.

[0299] Comparative Example 3

[0300] Same as Comparative Example 2, but step (4) is removed, and the self-assembled compound 4PACz is disposed on the FTO surface to obtain a battery device labeled as Battery 30.

[0301] The batteries 1 - 30 obtained from the above Examples 1 - 27 and Comparative Examples 1 - 3 were subjected to battery performance tests to obtain Table 1. Among them, for the testing (I-V testing) of perovskite solar cells, a solar simulator of Guangyan was used, and the test was carried out in accordance with the national standard IEC61215. The intensity of the light was calibrated with a crystalline silicon solar cell to reach one sun intensity, AM 1.5. The battery was connected to a digital source meter, and its photoelectric conversion efficiency was measured under illumination. The optimal efficiency is the highest efficiency after the device is naturally aged for 1 - 10 days, and the efficiency on the 30th day is the device efficiency after the device is stored in the dark state under nitrogen.

[0302] Table 1 Battery Performance Test (I-V Test)

[0303]

[0304]

[0305] From the relevant data in Table 1, it can be seen that the batteries 1 - 27 in Examples 1 - 27 all used self-assembled compounds containing ammonium salt groups or phosphonium salt groups, and the optimal efficiency and the efficiency on the 30th day were both higher than those of the batteries 28 - 30 in Comparative Examples 1 - 3, indicating that the self-assembled compounds of the present application can be applied to perovskite solar cells to improve the photoelectric conversion efficiency and stability of perovskite solar cells.

[0306] The above are only the implementation manners of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be included in the patent protection scope of the present application by the same token.

Claims

1. A self-assembled compound, characterized in that, the structural formula of the self-assembled compound includes an A group and an Ar group. The A group is located at one end of the structural formula of the self-assembled compound, and the Ar group is located at the other end of the structural formula of the self-assembled compound. The A group is an oxygen-containing acid group or its corresponding salt, and the Ar group includes an aromatic ring functional group with at least one ammonium salt group or phosphonium salt group.

2. The self-assembled compound according to claim 1, characterized in that, the Ar group includes at least one of the following Ar1 group - Ar22 groups: wherein the R groups independently include -H, a halogen group, -OR', -OCOR', -NHCOR', -NR' 2 , -R', a halogen-substituted -R', -SR', -PR' 2 , the ammonium salt group or the phosphonium salt group; the R' group independently includes at least one of a substituted or unsubstituted phenyl group, a thiophene group, an alkyl group with 1 - 5 carbon atoms, and -H; The Y group independently includes -CR 2 -, -NR-, -O-, -SiR 2 -, -PR-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR)-, -C(=CR 2 )-; and m ranges from 1 to 3; wherein, in the Ar group, at least one of the R groups is the ammonium salt group or the phosphonium salt group.

3. The self-assembled compound according to claim 2, characterized in that, The ammonium salt group includes -(L) n NR’ 3 X and -(L) n NR’ 3 + at least one of; the phosphonium salt group includes -(L) n PR’ 3 X and -(L) n PR’ 3 + at least one of; wherein the L groups independently include -CR 2 -, -NR-, -O-, -SiR 2 -, -PR-, -S-, -C(=O)-, -C(=S)-, -C(=NR)-, -C(=CR 2 )-, at least one of; wherein the Q groups independently include at least one of -NR-, -O-, -S-; the Z groups independently include at least one of =CR–, =N–; X independently includes I - , Br - , Cl - , F - , CN - , OCN - , SCN - , BF 4 - and PF 6 - at least one of; and n ranges from 0 to 10.

4. The self-assembled compound according to claim 3, characterized in that, the A group is connected to the Ar group, and the structural formula of the self-assembled compound is: Ar - A; or The A group is connected to the Ar group through the L group, and the structural formula of the self-assembled compound is: Ar-(L) q -A, where q ranges from 1 to 10.

5. The self-assembled compound according to any one of claims 1 - 4, characterized in that, The oxygen-containing acid groups include -COOH, -PO(OH) 2 , -PHO(OH), -SO 2 (OH), -B(OH) 2 and at least one of them.

6. The self-assembled compound according to any one of claims 1 - 5, characterized in that, The A group is a salt corresponding to the oxyacid group, and the aromatic ring functional group of the Ar group includes at least one -(L) n NR’ 3 + or -(L) n PR’ 3 + 。 7. The self-assembled compound according to any one of claims 1 - δ, characterized in that, The salts corresponding to the oxygen-containing acid groups include at least one of -COO-, -PO(OH)O-, -POO 2 2- , -PHOO - , -SO 2 O - , -B(OH)O-.

8. The self-assembled compound according to any one of claims 1 - 7, characterized in that, the self-assembled compound includes at least one of the following SAM1 - SAM23:

9. A perovskite solar cell, characterized in that, the perovskite solar cell includes a passivation material, and the passivation material includes a first sub-passivation material, and the first sub-passivation material is the self-assembled compound according to any one of claims 1 - 8.

10. The perovskite solar cell according to claim 9, characterized in that, the perovskite solar cell includes a perovskite layer, a hole transport layer, and an electrode layer. The hole transport layer is located between the perovskite layer and the electrode layer, and the hole transport layer includes the passivation material; or the perovskite solar cell includes a perovskite layer, a hole transport layer, a passivation layer, and an electrode layer. The hole transport layer is located between the perovskite layer and the electrode layer, and the passivation layer is located between the perovskite layer and the hole transport layer, and the passivation layer includes the passivation material.

11. The perovskite solar cell according to claim 9 or 10, characterized in that, the passivation material further includes a second sub-passivation material mixed with the first sub-passivation material, and the second sub-passivation material is a self-assembled compound different from the first sub-passivation material.

12. The perovskite solar cell according to claim 11, characterized in that, the thickness of the passivation layer is 01 - 5 nm.

13. A perovskite solar cell, characterized in that, the perovskite solar cell includes a hole transport layer, and the hole transport layer is the self-assembled compound according to any one of claims 1 - 8.

14. The perovskite solar cell according to claim 13, characterized in that, The thickness of the hole transport layer is 01 - 5 nm.

15. An electrical device, characterized in that it includes the perovskite solar cell according to any one of claims 9 - 14.

16. A power generation device, characterized in that it includes the perovskite solar cell according to any one of claims 9 - 14.

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