Air supply method for wafer growth and wafer growth equipment

Abstract

The invention discloses a gas supply method for wafer growth and wafer growth equipment, and belongs to the technical field of semiconductor manufacturing, and the gas supply method for wafer growth comprises the steps: dividing a gas supply panel for wafer growth into two first gas supply regions adjacent to a side wall and a second gas supply region located between the two first gas supply regions, during gas supply, the gas flow of the first gas supply area and the gas flow of the second gas supply area are controlled, so that the ratio of the gas flow of the first gas supply area to the gas outlet area is larger than the ratio of the gas flow of the second gas supply area to the gas outlet area, and the gas flow speed of the two sides is larger than the gas flow speed of the middle during gas supply; therefore, speed loss caused by factors such as boundary layer effect of airflow on two sides is compensated, the average speed of the airflow on two sides tends to be consistent with the average speed of the airflow in the middle, the flow distribution of reaction gas is more uniform, and the growth consistency of each part of the wafer is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and particularly to a gas supply method for wafer growth and a wafer growth device. Background Art

[0002] Semiconductors are generally prepared by chemical vapor deposition, and the reaction chamber needs to be ventilated during the preparation process. When ventilating, there is a boundary layer effect between the edge side of the reaction gas and the chamber wall, which will cause loss of the kinetic energy of the reaction gas. As the reaction gas flows, a more obvious velocity difference will appear between the middle and the edge of the reaction gas in the reaction chamber, and the phenomenon that the middle flow velocity is greater than the flow velocities on both sides will occur, resulting in a large flow difference of the reaction gas flowing through the unit area on both sides and in the middle of the susceptor, which easily leads to a rate difference in the growth reaction of the wafer, affecting the consistency of wafer growth and reducing the wafer output quality. Summary of the Invention

[0003] Object of the Invention: The object of the embodiments of this application is to provide a gas supply method for wafer growth and a wafer growth device, aiming to solve the technical problem of uneven growth caused by the flow rate difference between the middle and both sides of the susceptor in the prior art.

[0004] Technical Solution: In a first aspect, the embodiments of this application provide a gas supply method for wafer growth, including:

[0005] Providing a wafer growth device, where the wafer growth device includes:

[0006] A wafer growth platform, the wafer growth platform includes a bottom wall and a top wall, a reaction chamber located between the bottom wall and the top wall, and a side wall connecting the bottom wall and the top wall. The bottom wall or the top wall includes a susceptor capable of carrying a wafer, and the reaction chamber extends in a first direction; and,

[0007] A gas supply device, the gas supply device is arranged at one end of the wafer growth platform along the first direction. The gas supply device includes an air inlet plate facing the reaction chamber and perpendicular to the first direction. The air inlet plate includes two first gas supply regions located on the left and right sides of the air inlet plate and adjacent to the side wall, and at least one second gas supply region located between the two first gas supply regions;

[0008] Wherein, the gas supply method includes respectively controlling the gas flow rate of the first gas supply region and the gas flow rate of the second gas supply region, so that the ratio of the gas flow rate of the first gas supply region to the outlet area is greater than the ratio of the gas flow rate of the second gas supply region to the outlet area.

[0009] In some embodiments, the air inlet plate has a plurality of first air inlet holes, a plurality of second air inlet holes, and a plurality of third air inlet holes;

[0010] The gas supply method includes controlling the gas flow rates of the first air inlet hole, the second air inlet hole, and the third air inlet hole in the second gas supply area to be the same, and configured as V 2 ; controlling the gas flow rates of the first air inlet hole, the second air inlet hole, and the third air inlet hole in the first gas supply area to be the same, and configured as V 1 ; controlling the V 1 to be greater than the V 2 .

[0011] In some embodiments, the air outlet area per unit area of the air inlet plate in the first gas supply area is smaller than the air outlet area per unit area of the air inlet plate in the second gas supply area;

[0012] The gas supply method further includes: controlling the total gas flow rate per unit area of the air inlet plate in the first gas supply area to be equal to the total gas flow rate per unit area of the air inlet plate in the second gas supply area.

[0013] In some embodiments, the air outlet area per unit area of the air inlet plate in the first gas supply area is equal to the air outlet area per unit area of the air inlet plate in the second gas supply area;

[0014] The gas supply method further includes: controlling the total gas flow rate per unit area of the air inlet plate in the first gas supply area to be greater than the total gas flow rate per unit area of the air inlet plate in the second gas supply area.

[0015] In some embodiments, different reaction gases are controlled to enter the reaction chamber through different air inlet holes;

[0016] Controlling the flow rate ratio between different reaction gases in the first gas supply area and the second gas supply area to be the same;

[0017] Controlling the average concentration of the reaction gas in the first gas supply area to be less than the average concentration of the reaction gas in the second gas supply area.

[0018] In some embodiments, the bottom wall includes a pedestal capable of carrying a wafer, the air inlet plate has a first height c and a second height d greater than the first height c relative to the pedestal, the first air inlet hole and the second air inlet hole are spaced apart at the second height d, and the third air inlet hole is provided at the first height c;

[0019] The gas supply method further includes: introducing auxiliary gas into the wafer growth platform through the third air inlet hole;

[0020] Different reaction gases required for wafer growth reaction are introduced into the wafer growth platform through the first air inlet hole and the second air inlet hole respectively.

[0021] In some embodiments, the gas supply method further includes:

[0022] In the first gas supply area, the gas supply flow rate of the first air inlet hole is a; in the second gas supply area, the gas supply flow rate of the first air inlet hole is b;

[0023] Satisfying: a / b ≤ 1.5.

[0024] In some embodiments, the air inlet plate includes at least a plurality of first air inlet holes and a plurality of second air inlet holes;

[0025] In the first gas supply area, the ratio of the gas supply flow rate of the first air inlet hole to the cross-sectional area of the first air inlet hole is A;

[0026] In the second gas supply area, the ratio of the gas supply flow rate of the first air inlet hole to the cross-sectional area of the first air inlet hole is B;

[0027] Satisfying: A ≥ B;

[0028] In the first gas supply area, the ratio of the gas supply flow rate of the second air inlet hole to the cross-sectional area of the second air inlet hole is A';

[0029] In the second gas supply area, the ratio of the gas supply flow rate of the second air inlet hole to the cross-sectional area of the second air inlet hole is B';

[0030] Satisfying: A' ≥ B'.

[0031] In some embodiments, satisfying: 1 < A / B ≤ 1.5, 1 < A' / B' ≤ 1.5.

[0032] In a second aspect, an embodiment of the present application provides a wafer growth device, including: a wafer growth platform, the wafer growth platform includes a bottom wall and a top wall, a reaction cavity located between the bottom wall and the top wall, and a side wall connecting the bottom wall and the top wall, the reaction cavity extends along a first direction; and,

[0033] A gas supply device, the gas supply device is arranged at one end of the wafer growth platform along the first direction, the gas supply device includes an air inlet plate facing the reaction cavity and perpendicular to the first direction, the air inlet plate includes two first gas supply areas located on the left and right sides of the air inlet plate and adjacent to the side wall, and at least one second gas supply area located between the two first gas supply areas; and,

[0034] At least one flow control component, and the flow control component controls the intake air of each of the air supply areas by using the air supply method for wafer growth described in any one of the first aspects.

[0035] Beneficial effects: Compared with the prior art, the embodiments of the present application provide an air supply method for wafer growth and a wafer growth device. The air supply method for wafer growth includes dividing the air supply panel for wafer growth into two first air supply areas adjacent to the side wall and a second air supply area located between the two first air supply areas. When supplying air in the present application, the gas flow rate of the first air supply area and the gas flow rate of the second air supply area are controlled so that the ratio of the gas flow rate of the first air supply area to the air outlet area is greater than the ratio of the gas flow rate of the second air supply area to the air outlet area, so that the air flow velocity on both sides is greater than the air flow velocity in the middle during air supply, to make up for the velocity loss caused by factors such as the boundary layer effect of the side wall of the air flow on both sides, so that the average velocity of the air flow on both sides is consistent with the average velocity of the air flow in the middle, making the flow distribution of the reaction gas passing through the unit surface of the reaction area more uniform and improving the growth consistency of each part of the wafer.

[0036] The wafer growth device provided in the present application includes a wafer growth platform, an air supply device, and at least one flow control component. The air supply device is connected to the wafer growth platform for supplying air to the wafer growth platform. The flow control component supplies air to the wafer growth platform by using the air supply method for wafer growth in the present application. In the present application, the air supply device includes an intake plate, and the intake plate faces the wafer growth platform so that the gas enters the wafer growth platform after being shunted by the intake plate. In the present application, the intake plate includes two first air supply areas located on the left and right sides, and at least one second air supply area located between the two first air supply areas. The first air supply area faces the two side parts of the wafer growth platform, and the second air supply area faces the middle part of the wafer growth platform, so as to manage the intake air of the middle part and the two side parts of the wafer growth platform in combination with the air supply method for wafer growth in the present application, to make up for the velocity loss caused by factors such as the boundary layer effect of the side wall of the air flow on both sides, so that the average velocity of the air flow on both sides is consistent with the average velocity of the air flow in the middle, making the flow distribution of the reaction gas more uniform and improving the growth consistency of each part of the wafer. Description of the Drawings

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can be obtained according to these drawings.

[0038] Figure 1 It is a three-dimensional partial cross-sectional view of a wafer growth device provided by an embodiment of the present application;

[0039] Figure 2 A perspective view of an air inlet plate in a wafer growth device provided by an embodiment of the present application;

[0040] Figure 3 A sectional view of the three-dimensional structure of a gas supply device in a wafer growth device provided by an embodiment of the present application;

[0041] Figure 4 A gas flow velocity line diagram on one side of a susceptor close to a gas supply device in a gas supply method for wafer growth provided by an embodiment of the present application;

[0042] Figure 5 A gas flow velocity line diagram in the middle of a susceptor in a gas supply method for wafer growth provided by an embodiment of the present application;

[0043] Figure 6 A gas flow velocity line diagram on one side of a susceptor far from a gas supply device in a gas supply method for wafer growth provided by an embodiment of the present application;

[0044] Reference numerals: 100, wafer growth platform; 101, reaction chamber; 102, bottom wall; 103, top wall; 104, susceptor; 105, side wall; 200, gas supply device; 210, air inlet plate; 212, second gas supply area; 213, first gas supply area; 214, first air inlet hole; 215, second air inlet hole; 216, third air inlet hole; X, first direction; Y, second direction; Z, third direction. Detailed implementation manners

[0045] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.

[0046] The terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise stated, the meaning of "a plurality" is two or more.

[0047] In the description of the present application, it should be noted that unless otherwise clearly specified and defined, the terms "connected" and "coupled" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium, and it may be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0048] As Figure 1 shown, an embodiment of the present application provides a gas supply method for a wafer growth device. The wafer growth device includes a wafer growth platform 100 and a gas supply device 200. The wafer growth platform 100 is connected to the gas supply device 200. The wafer growth platform 100 provides a physical platform for the growth of wafers, and the gas supply device 200 is used to supply gas to the wafer growth platform 100.

[0049] As Figures 1 to 3 shown, for convenience of description, a first direction X, a second direction Y, and a third direction Z are configured for the wafer growth device. The first direction X, the second direction Y, and the third direction Z are orthogonal to each other.

[0050] As Figure 1 shown, the wafer growth platform 100 includes a bottom wall 102, a top wall 103, a reaction cavity 101 located between the bottom wall 102 and the top wall 103, and side walls 105 connecting the bottom wall 102 and the top wall 103. The reaction cavity 101 extends along the first direction X. The bottom wall 102 and the top wall 103 are arranged at the bottom and top of the reaction cavity 101 along the third direction Z. The bottom wall 102 includes a base 104 capable of carrying wafers. The wafer-carrying surface of the base 104 faces the reaction cavity 101. Two side walls 105 are provided, and the two side walls 105 are arranged at the side of the reaction cavity 101 along the second direction Y. In other embodiments, the base 104 may also be arranged in a "face-down" form, that is, the top wall 103 includes the aforementioned base 104, and the wafer-carrying surface of the base 104 is arranged downward to face the reaction cavity 101.

[0051] As Figures 1 to 3As shown, the gas supply device 200 is arranged at one end of the wafer growth platform 100 along the first direction X. The gas supply direction of the gas supply device 200 is the first direction X. The gas supply device 200 includes an air inlet plate 210 facing the reaction cavity 101 and perpendicular to the first direction X. The air inlet plate 210 includes a plurality of gas supply areas arranged along the second direction Y to supply gas to both sides and the middle of the base 104 respectively. The plurality of gas supply areas include two first gas supply areas 213 located on the left and right sides of the air inlet plate 210 and adjacent to the two side walls 105 respectively. The two first gas supply areas 213 are used to supply gas to the two side edges of the base 104 to meet the gas supply requirements of the side edges of the base 104; and at least one second gas supply area 212 located between the two first gas supply areas 213. The second gas supply area 212 is used to supply gas to the middle of the base 104 to meet the gas supply requirements of the middle of the base 104. In response to the technical problem that the gas flow velocity in the side area is less than that in the middle area due to the boundary layer effect with the side wall 105, the gas supply to the middle and both sides of the base 104 is managed separately, so that the average gas flow velocities on both sides and in the middle of the base 104 are uniform, improving the consistency of wafer growth between different areas of the base 104 and improving the wafer output quality.

[0052] Specifically, the gas supply method includes: providing at least one flow control component to independently control the gas flow states of the first gas supply area 213 and the second gas supply area 212 through the flow control component.

[0053] As Figures 4 to 6 shown, the flow controller controls the gas flow rate of the first gas supply area 213 and the gas flow rate of the second gas supply area 212, so that the ratio of the gas flow rate of the first gas supply area 213 to the gas outlet area is greater than the ratio of the gas flow rate of the second gas supply area 212 to the gas outlet area. When supplying gas to the base 104, the gas in the first gas supply area 213 has a higher gas flow velocity when flowing out of the gas supply device 200 to make up for the velocity loss caused by the boundary layer effect between the first gas supply area 213 and the side wall 105, so that the gas flow velocities in the first gas supply area 213 and the second gas supply area 212 tend to be consistent at the central cross-section of the base 104. At the same time, the attenuation performance of the gas flow velocities on the front and rear sides of the base 104 along the first direction X is consistent, so that the overall performance of the gas flow field where the base 104 is located is consistent, facilitating the control of the process.

[0054] As Figures 1 to 3As shown, in some embodiments, to achieve gas distribution in the gas supply area, the intake plate 210 has a plurality of first intake holes 214, a plurality of second intake holes 215, and a plurality of third intake holes 216, and a plurality of first intake holes 214, a plurality of second intake holes 215, and a plurality of third intake holes 216 are provided in both the first gas supply area 213 and the second gas supply area 212, so as to introduce gases with different functions and types into different areas in the reaction chamber 101. For example, the introduced gases may include, but are not limited to, reaction gases and auxiliary gases. The auxiliary gas may be a parasitic reaction inhibition gas or a catalytic gas.

[0055] As Figures 4 to 6 shown, in this embodiment, the gas supply method further includes controlling the gas flow rates of the first intake holes 214, the second intake holes 215, and the third intake holes 216 in the second gas supply area 212 to be the same and configured as V 2 ; controlling the gas flow rates of the first intake holes 214, the second intake holes 215, and the third intake holes 216 in the first gas supply area 213 to be the same and configured as V 1 ; controlling V 1 to be greater than V 2 to make up for the velocity loss caused by the boundary layer effect of the first gas supply area 213 with the side wall 105, so that the gas flow rates in the first gas supply area 213 and the second gas supply area 212 tend to be the same when reaching the central section of the base 104. At the same time, the attenuation performance of the gas flow rates on the front and rear sides of the base 104 along the first direction X tends to be the same, so that the overall performance of the gas flow field where the base 104 is located is consistent, facilitating process control.

[0056] As Figures 1 to 6 shown, in some embodiments, the gas outlet area per unit area of the intake plate 210 in the first gas supply area 213 is smaller than the gas outlet area per unit area of the intake plate 210 in the second gas supply area 212, so that under the same gas outlet flow rate, the ratio of the gas outlet flow rate to the gas outlet area in the first gas supply area 213 is greater than the ratio of the gas outlet flow rate to the gas outlet area in the second gas supply area 212, that is, the gas flow rate in the first gas supply area 213 is greater than the gas flow rate in the second gas supply area 212, to make up for the velocity loss of the gas flowing out of the first gas supply area 213 due to the boundary layer effect with the side wall.

[0057] In this embodiment, while controlling the flow rate difference, the total gas flow rate per unit area of the intake plate 210 in the first gas supply area 213 can also be controlled to be equal to the total gas flow rate per unit area of the intake plate 210 in the second gas supply area 212.

[0058] As Figures 1 to 3As shown, in some embodiments, the gas outlet area per unit area of the intake plate 210 in the first gas supply region 213 is equal to the gas outlet area per unit area of the intake plate 210 in the second gas supply region 212;

[0059] As Figures 4 to 6 shown, in this embodiment, the gas supply method further includes controlling the total gas flow rate per unit area of the intake plate 210 in the first gas supply region 213 to be greater than the total gas flow rate per unit area of the intake plate 210 in the second gas supply region 212, so that the gas supply flow rate in the first gas supply region 213 is higher than that in the second gas supply region 212, to compensate for the velocity loss of the gas flowing out of the first gas supply region 213 and the side wall 105 due to the boundary layer effect.

[0060] In some embodiments, the gas supply method further includes: controlling different reaction gases and auxiliary gases to enter the reaction chamber 101 through the first intake hole 214, the second intake hole 215, and / or the third intake hole 216; controlling the same flow rate ratio between different reaction gases in the first gas supply region 213 and the second gas supply region 212, so that the flow rate ratio of the reaction gas and the auxiliary gas in the mixed gas flowing out of the first gas supply region 213 and the second gas supply region 212 is the same, in order to control the flow rate ratio of the mixed gas in the entire reaction chamber 101 to remain unchanged;

[0061] Since in the specific process, the depletion phenomenon of the reaction gas at the central position of the susceptor 104 is more prominent than that at the edge position of the susceptor 104 close to the side wall 105, in a further embodiment, the gas supply method further includes: controlling the average concentration of the reaction gas in the first gas supply region 213 to be less than the average concentration of the reaction gas in the second gas supply region 212, so as to reduce the total flow rate of the reaction gas flowing through the edge position of the susceptor 104 close to the side wall 105 and lower the reaction rate of the reaction gas at the position of the susceptor 104 close to the side wall 105 under the condition that the overall gas flow field where the susceptor 104 is located is consistent, to balance the film thickness non-uniformity phenomenon caused by the depletion phenomenon, improve the growth consistency of the wafers on the side and in the middle of the susceptor 104, and improve the wafer out-of-film quality; further, controlling the gas concentration difference between the central region and the two side regions of the susceptor 104 not to be higher than 1.1 times.

[0062] As Figure 1 shown, in some embodiments, the bearing surface of the susceptor 104 is parallel to the gas supply direction, so that the reaction gas and / or the auxiliary gas can sweep across the wafer surface to complete the growth reaction. The intake plate 210 has a first height c and a second height d greater than the first height c relative to the susceptor 104. The first intake hole 214 and the second intake hole 215 are spaced apart at the second height d, and the third intake hole 216 is provided at the first height c;

[0063] In this embodiment, the gas supply method further includes: introducing auxiliary gas into the wafer growth platform 100 through the third gas inlet hole 216. The auxiliary gas can be a parasitic reaction inhibiting gas or a catalytic gas. Since the first height c is closer to the growth surface of the wafer on the susceptor 104 than the second height d, when introducing the parasitic reaction inhibiting gas into the growth surface of the wafer through the third gas inlet hole 216 provided at the first height c, the parasitic reaction on the epitaxial surface of the wafer can be reduced, and the film formation quality and reaction rate can be improved.

[0064] In this embodiment, different reaction gases required for wafer growth are introduced into the wafer growth platform 100 through the first gas inlet hole 214 and the second gas inlet hole 215 respectively.

[0065] In some embodiments, the gas supply method further includes: in the first gas supply area 213, the gas supply flow rate of the first gas inlet hole 214 is a; in the second gas supply area 212, the gas supply flow rate of the first gas inlet hole 214 is b. To prevent turbulent flow from occurring at the junction of the first gas supply area 213 and the second gas supply area 212 and enable the gas flow to pass over the susceptor 104 in a stable and smooth laminar flow, the value of a / b should not be too large. In this application, it satisfies: a / b ≤ 1.5.

[0066] In this embodiment, the value of a / b can also be selected as any value between 1 and 1.5, such as 1.1, 1.2, 1.3, or 1.4 according to engineering requirements.

[0067] In some embodiments, in the first gas supply area 213, the ratio of the gas supply flow rate of the first gas inlet hole 214 to the cross-sectional area of the first gas inlet hole 214 is A; in the second gas supply area 212, the ratio of the gas supply flow rate of the first gas inlet hole 214 to the cross-sectional area of the first gas inlet hole 214 is B; it satisfies: A ≥ B; and 1 < A / B ≤ 1.5.

[0068] In some embodiments, in the first gas supply area 213, the ratio of the gas supply flow rate of the second gas inlet hole 215 to the cross-sectional area of the second gas inlet hole 215 is A'; in the second gas supply area 212, the ratio of the gas supply flow rate of the second gas inlet hole 215 to the cross-sectional area of the second gas inlet hole 215 is B'; it satisfies: A' ≥ B'; and 1 < A' / B' ≤ 1.5.

[0069] As Figures 1 to 3 shown, this application also provides a wafer growth device for implementing the gas supply method for wafer growth in this application. The wafer growth device includes a wafer growth platform 100 and a gas supply device 200. The wafer growth platform 100 is connected to the gas supply device 200. The wafer growth platform 100 provides a physical platform for the growth of the wafer, and the gas supply device 200 is used to supply gas to the wafer growth platform 100.

[0070] As Figures 1 to 3As shown, for ease of description, a first direction X, a second direction Y, and a third direction Z are configured for the wafer growth device, and the first direction X, the second direction Y, and the third direction Z are orthogonal to each other.

[0071] As Figure 1 shown, in some embodiments, the wafer growth platform 100 includes a bottom wall 102 and a top wall 103, a reaction cavity 101 located between the bottom wall 102 and the top wall 103, and side walls 105 connecting the bottom wall 102 and the top wall 103. The reaction cavity 101 extends along the first direction X, the bottom wall 102 and the top wall 103 are arranged at the bottom and top of the reaction cavity 101 along the third direction Z, two side walls 105 are provided, and the two side walls 105 are sequentially arranged at the sides of the reaction cavity 101 along the second direction Y.

[0072] As Figures 1 to 3 shown, in some embodiments, the gas supply device 200 is arranged at one end of the wafer growth platform 100 along the first direction X, the gas supply direction of the gas supply device 200 is the first direction X, the gas supply device 200 includes an air inlet plate 210 facing the reaction cavity 101 and perpendicular to the first direction X, and the air inlet plate 210 includes a plurality of gas supply areas arranged along the second direction Y so as to supply gas to both sides and the middle of the base 104 respectively. The plurality of gas supply areas include two first gas supply areas 213 located on the left and right sides of the air inlet plate 210 and adjacent to the two side walls 105 respectively, and the two first gas supply areas 213 are used to supply gas to the two side edges of the base 104 to meet the gas supply requirements of the side edges of the base 104; and at least one second gas supply area 212 located between the two first gas supply areas 213, and the second gas supply area 212 is used to supply gas to the middle of the base 104 to meet the gas supply requirements of the middle of the base 104. In view of the technical problem that the gas flow velocity in the side area is less than that in the middle area due to the boundary layer effect with the side wall 105, the gas supply to the middle of the base 104 and the gas supply to both sides are managed separately, so that the average gas flow velocities on both sides and in the middle are uniform, the consistency of wafer growth in different areas of the base 104 is improved, and the wafer output quality is improved.

[0073] In some embodiments, the wafer growth device further includes at least one flow control component, and the flow control component independently controls the air intake of each gas supply area by using the gas supply method for wafer growth provided in this application.

[0074] The above has introduced in detail a gas supply method for wafer growth and a wafer growth device provided in the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A gas supply method for wafer growth, characterized in that, a wafer growth device is provided, and the wafer growth device includes: a wafer growth platform (100), the wafer growth platform (100) includes a bottom wall (102), a top wall (103), a reaction cavity (101) located between the bottom wall (102) and the top wall (103), and side walls (105) connecting the bottom wall (102) and the top wall (103), the bottom wall (102) or the top wall (103) includes a base (104) capable of carrying a wafer, and the reaction cavity (101) extends along a first direction (X); and, a gas supply device (200), the gas supply device (200) is arranged at one end of the wafer growth platform (100) along the first direction (X), the gas supply device (200) includes an air inlet plate (210) facing the reaction cavity (101) and perpendicular to the first direction (X), the air inlet plate (210) includes two first gas supply areas (213) located on the left and right sides of the air inlet plate (210) and adjacent to the side walls (105), and at least one second gas supply area (212) located between the two first gas supply areas (213); wherein, the gas supply method includes respectively controlling the gas flow rates of the first gas supply area (213) and the second gas supply area (212) such that the ratio of the gas flow rate of the first gas supply area (213) to the gas outlet area is greater than the ratio of the gas flow rate of the second gas supply area (212) to the gas outlet area.

2. The gas supply method for wafer growth according to claim 1, characterized in that, the air inlet plate (210) has a plurality of first air inlet holes (214), a plurality of second air inlet holes (215), and a plurality of third air inlet holes (216); The air supply method includes controlling the air supply flow rates of the first air inlet hole (214), the second air inlet hole (215), and the third air inlet hole (216) in the second air supply area (212) to be the same, and configuring it as V 2 ; controlling the air supply flow rates of the first air inlet hole (214), the second air inlet hole (215), and the third air inlet hole (216) in the first air supply area (213) to be the same, and configuring it as V 1 ; controlling the V 1 to be greater than the V 2 .

3. The gas supply method for wafer growth according to claim 2, characterized in that, the gas outlet area per unit area of the air inlet plate (210) in the first gas supply area (213) is smaller than the gas outlet area per unit area of the air inlet plate (210) in the second gas supply area (212); the gas supply method further includes: controlling the total gas flow rate per unit area of the air inlet plate (210) in the first gas supply area (213) to be equal to the total gas flow rate per unit area of the air inlet plate (210) in the second gas supply area (212).

4. The gas supply method for wafer growth according to claim 2, characterized in that, the gas outlet area per unit area of the air inlet plate (210) in the first gas supply area (213) is equal to the gas outlet area per unit area of the air inlet plate (210) in the second gas supply area (212); the gas supply method further includes: controlling the total gas flow rate per unit area of the air inlet plate (210) in the first gas supply area (213) to be greater than the total gas flow rate per unit area of the air inlet plate (210) in the second gas supply area (212).

5. The gas supply method for wafer growth according to claim 2, characterized in that, Control different reaction gases to enter the reaction chamber (101) through different air inlets; Control the same flow rate ratio between different reaction gases in the first gas supply area (213) and the second gas supply area (212); Control the average concentration of the reaction gas in the first gas supply area (213) to be less than the average concentration of the reaction gas in the second gas supply area (212).

6. The gas supply method for wafer growth according to claim 2, wherein, the bottom wall (102) includes a base (104) capable of carrying a wafer, the air inlet plate (210) has a first height c and a second height d greater than the first height c relative to the base (104), the first air inlets (214) and the second air inlets (215) are spaced apart and arranged at the second height d, and the third air inlet (216) is arranged at the first height c; the gas supply method further includes: introducing auxiliary gas into the wafer growth platform (100) through the third air inlet (216); introducing different reaction gases required for wafer growth reaction into the wafer growth platform (100) through the first air inlet (214) and the second air inlet (215) respectively.

7. The gas supply method for wafer growth according to claim 2, wherein, the gas supply method further includes: in the first gas supply area (213), the gas supply flow rate of the first air inlet (214) is a; in the second gas supply area (212), the gas supply flow rate of the first air inlet (214) is b; satisfying: a / b ≤ 1.

5.

8. The gas supply method for wafer growth according to claim 1, wherein, the air inlet plate (210) includes at least a plurality of first air inlets (214) and a plurality of second air inlets (215); in the first gas supply area (213), the ratio of the gas supply flow rate of the first air inlet (214) to the cross-sectional area of the first air inlet (214) is A; in the second gas supply area (212), the ratio of the gas supply flow rate of the first air inlet (214) to the cross-sectional area of the first air inlet (214) is B; satisfying: A ≥ B; in the first gas supply area (213), the ratio of the gas supply flow rate of the second air inlet (215) to the cross-sectional area of the second air inlet (215) is A'; in the second gas supply area (212), the ratio of the gas supply flow rate of the second air inlet (215) to the cross-sectional area of the second air inlet (215) is B'; satisfying: A' ≥ B'.

9. The gas supply method for wafer growth according to claim 8, wherein, satisfying: 1 < A / B ≤ 1.5, 1 < A' / B' ≤ 1.

5.

10. A wafer growth device, wherein, comprising: A wafer growth platform (100), the wafer growth platform (100) comprising a bottom wall (102), a top wall (103), a reaction chamber (101) located between the bottom wall (102) and the top wall (103), and side walls (105) connecting the bottom wall (102) and the top wall (103), the reaction chamber (101) extending along a first direction (X); and, A gas supply device (200), the gas supply device (200) being disposed at one end of the wafer growth platform (100) along the first direction (X), the gas supply device (200) including an air inlet plate (210) facing the reaction chamber (101) and perpendicular to the first direction (X), the air inlet plate (210) including two first gas supply regions (213) located on the left and right sides of the air inlet plate (210) and adjacent to the side walls (105), and at least one second gas supply region (212) located between the two first gas supply regions (213); And, At least one flow control component, the flow control component controlling the intake air of each gas supply region by using the gas supply method for wafer growth as described in any one of claims 1-9.

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