Film heat flow sensor based on temperature gradient
By depositing tungsten-rhenium oxide films on quad-porous hafnium oxide tubes and double-porous aluminum oxide films and using magnetron sputtering technology, the problem of poor stability of existing thermoelectric materials in ultra-high temperature environments is solved, and high-precision thermal flow density measurement is achieved.
Patent Information
- Application Number
- CN202411768730.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-05-30
AI Technical Summary
It is difficult for existing thermoelectric materials to maintain stability in ultra-high temperature environments, resulting in limited reliability and accuracy of heat flow density measurement. Traditional heat flow sensors are prone to oxidation failure at high temperatures.
Using a tungsten and rhenium film heat flow sensor based on temperature gradient, the positive tungsten film and the negative tungsten and rhenium 26 film are deposited on the four-porous hafnium oxide tube and the double-porous aluminum oxide film, and the uniformity and high quality of the film are achieved by using magnetron sputtering technology.
It realizes the structural integrity and provide stable thermal potential in extremely high temperature environments, improving the sensor's tolerance in high temperature environments and the accuracy of transient heat flow density measurement.
Smart Images
Figure CN120063513A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of test and measurement control, and particularly relates to a thin-film heat flux sensor based on temperature gradient. Background Art
[0002] The research and development background of tungsten-rhenium thin-film heat flux sensors stems from the technical requirements for measuring heat flux density in ultra-high temperature environments. Transient heat flux density measurement is crucial in applications such as aerospace, nuclear industry, wind tunnel experiments, and laser testing. Especially in these extreme environments, materials need to have extremely high temperature resistance.
[0003] In 2013, Xiao Huliang et al. from Northwestern Polytechnical University measured the heat flux on the throat wall of a solid rocket motor nozzle using an HT50-20 type Gordon heat flux meter. The maximum operating temperature of the heat flux meter reached 1873K, the response time was 0.1s, and the maximum measured heat flux was 0.5MW / m 2 ². In 2014, Sun Na et al. from Shanghai Aerospace Power Technology Research Institute successfully measured the transient temperature and heat flux density of the nozzle throat liner through the method of embedding fast-response thermocouples and solving the inverse heat conduction problem. The test results showed that the temperature peak of the measurement points closer to the inner wall was higher, and the synchronization between the transient change of the measurement point temperature and the engine operating state was better. The calculation results showed that the maximum error was 71.9%, and the maximum heat flux density was approximately 30MW / m 2 ². Although the measurement accuracy of this research is relatively high, the sensitivity of the inverse heat conduction problem method to the initial conditions and boundary conditions may lead to instability of the measurement results.
[0004] Currently common thermoelectric materials, such as nickel-chromium alloys or other ordinary metal materials, are difficult to maintain stability in ultra-high temperature environments, resulting in limited reliability and accuracy of measurements. Traditional heat flux sensors are prone to oxidation failure at temperatures above 1000°C and cannot meet the requirements of measurement accuracy. There is an urgent need for a sensing material that can maintain chemical and structural stability under extreme conditions for a long time in the measurement of heat flux density in high-temperature environments. Summary of the Invention
[0005] Based on the above technical problems, the present invention provides a tungsten-rhenium thin-film heat flux sensor based on temperature gradient to solve problems such as the limitations of the prior art in measuring heat flux density under high-temperature conditions.
[0006] To solve the above technical problems, one of the objectives of the present invention is to provide a thin-film heat flux sensor based on temperature gradient, including a hafnium oxide tube 1 with four holes, an alumina thin film 6 with two holes, a positive tungsten thin film 13, a negative tungsten-rhenium 26 thin film 11, a tungsten-rhenium 26 alloy wire 10, and a tungsten wire 9.
[0007] The four-hole hafnium oxide tube 1 has a fixed support structure. The double-hole alumina film 6, the positive tungsten film 13, and the negative tungsten rhenium 26 film 11 are fixedly installed on the four-hole hafnium oxide tube 1. The four-hole hafnium oxide tube 1 is divided into a left hole 2, a right hole 4, an upper hole 3, and a lower hole 5. The double-hole alumina film 6 is a heat insulation structure and contains a hole 7 and a hole 8;
[0008] On the upper surface of the four-hole hafnium oxide tube 1, the positive tungsten film 13 and the negative tungsten rhenium 26 film 11 are deposited at the positions of the lower hole 5 and the upper hole 3 respectively. The positive tungsten film 13 covers the lower hole 5 and is led by a tungsten wire 9, and the negative tungsten rhenium 26 film 11 covers the upper hole 3 and is led by a tungsten rhenium 26 alloy wire 10;
[0009] On the upper surface of the double-hole alumina film 6, the positive tungsten film 13 and the negative tungsten rhenium 26 film 11 are deposited at the positions of the left hole 2 and the right hole 4 respectively. The positive tungsten film 13 covers the left hole 3 and is connected by a tungsten wire 9, and the negative tungsten rhenium 26 film 11 covers the right hole 4 and is connected by a tungsten rhenium 26 alloy wire 10.
[0010] Further, the positive tungsten film and the negative tungsten rhenium 26 film form multiple temperature measurement nodes through contact to realize the sensing function based on the temperature gradient.
[0011] Further, the deposition of both the positive tungsten film and the negative tungsten rhenium 26 film adopts the magnetron sputtering process to ensure the uniformity and high quality of the film.
[0012] Further, the double-hole alumina film prepared by the magnetron sputtering process on the surface of the four-hole hafnium oxide tube has a thickness of 1 micron.
[0013] Further, the specific process parameters are a sputtering power of 150 watts, a sputtering time of 20 minutes, a downtime of 10 minutes, and the number of cyclic sputtering times is 2 - 3 times.
[0014] Further, the specific process parameters are a sputtering power of 150 watts, a sputtering time of 40 minutes, a downtime of 20 minutes, and the number of cyclic sputtering times is 25 - 35 times. The magnetron sputtering process has high density and uniformity.
[0015] Further, the diameter of the four-hole hafnium oxide tube is 2 mm and the aperture is 0.2 mm,
[0016] Further, the outer diameter of the double-hole alumina film is 2 mm and the aperture is 0.2 mm.
[0017] One or more of the above technical solutions of the present invention have at least one or more of the following technical effects: Due to its excellent oxidation resistance and high-temperature performance, the tungsten-rhenium alloy material has significant application prospects in high-temperature heat flux sensors. The tungsten-rhenium material can not only maintain its structural integrity in an extremely high-temperature environment but also provide a stable thermoelectric potential under a temperature gradient, making it extremely attractive for high-temperature heat flux density sensing. By depositing the tungsten-rhenium material in the form of a thin film on hafnium oxide and alumina substrates and using a magnetron sputtering process to achieve precise deposition of tungsten and tungsten-rhenium 26 films, not only the tolerance of the sensor in a high-temperature environment is improved, but also high-precision measurement of transient heat flux density is achieved. Such a sensor can adapt to harsh application environments such as laser experiments, nuclear reactors, and supersonic wind tunnels, providing a new solution for accurate measurement of transient heat flux density and meeting the requirements of modern industry and scientific research for real-time monitoring under ultra-high-temperature conditions. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 : Schematic diagram of the four-hole alumina tube of the present invention;
[0019] Figure 2 : Schematic diagram of the double-hole alumina film of the present invention;
[0020] Figure 3 : Schematic diagram of the decomposition of the sensitive core of the present invention;
[0021] Figure 4 : Curve graph of test data;
[0022] Wherein: 1 - four-hole hafnium oxide tube, 2 - left hole, 4 - right hole, 3 - upper hole, 5 - lower hole, 6 - double-hole alumina film, 7 - hole 1, 8 - hole 2, 9 - tungsten wire, 10 - tungsten-rhenium 26 alloy wire, 11 - negative tungsten-rhenium 26 thin film, 12 - temperature measurement node, 13 - positive tungsten thin film. SPECIFIC EMBODIMENTS
[0023] The present invention provides an ultra-high temperature transient tungsten-rhenium thin film heat flux sensor based on temperature gradient, which includes a four-hole hafnium oxide tube, a two-hole alumina thin film, a positive tungsten thin film and a negative tungsten-rhenium 26 thin film. The four-hole hafnium oxide tube has a diameter of 2 mm and a pore diameter of 0.2 mm. The positions of the four holes are the upper hole, the lower hole, the left hole and the right hole respectively; the outer diameter of the two-hole alumina thin film is 2 mm and the pore diameter is 0.2 mm. The positive tungsten thin film and the negative tungsten-rhenium 26 thin film are sequentially deposited on the surface of the four-hole hafnium oxide tube by magnetron sputtering process. The positive tungsten thin film and the negative tungsten-rhenium 26 thin film are in contact to form a temperature measurement node. The positive tungsten thin film covers the left hole in the four-hole hafnium oxide tube, and the left hole is led by a tungsten wire; the negative tungsten-rhenium 26 thin film covers the right hole in the four-hole hafnium oxide tube, and the right hole is led by a tungsten-rhenium 26 wire. The upper hole and the lower hole are not covered. The positive tungsten thin film and the negative tungsten-rhenium 26 thin film are deposited on the surface of the two-hole alumina thin film by magnetron sputtering process. The positive tungsten thin film covers the upper hole and is led by a tungsten wire, and the negative tungsten-rhenium 26 thin film covers the lower hole and is led by a tungsten-rhenium 26 wire. This technical solution effectively realizes the measurement of ultra-high temperature transient heat transfer.
[0024] Next, in combination with the embodiments of the present invention and the drawings, the technical solutions in the embodiments of the present invention will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present invention.
[0025] A tungsten-rhenium thin film heat flux sensor based on temperature gradient, as Figures 1-3 shown. It includes a four-hole hafnium oxide tube 1, a two-hole alumina thin film 6, a positive tungsten thin film 13, and a negative tungsten-rhenium 26 thin film 11. The four-hole hafnium oxide tube 1 is a fixed support structure, and the alumina thin film structure and the sensitive thin film electrode are fixedly installed on the four-hole hafnium oxide tube 1. The four-hole hafnium oxide tube 1 is divided into a left hole 2, a right hole 4, an upper hole 3, and a lower hole 5. The two-hole alumina thin film 6 is a heat insulation structure, and the two-hole alumina thin film 6 contains a hole 7 and a hole 8.
[0026] The outer diameter of the four-hole hafnium oxide tube 1 is 2 mm, and the diameters of the left hole 2, the right hole 4, the upper hole 3, and the lower hole 5 are designed to be 0.2 mm. The four-hole hafnium oxide tube 1 is used to provide stable structural support. Its pore diameter is 0.2 mm, and the size and position design ensure the effective contact of the positive tungsten thin film 13 and the negative tungsten-rhenium 26 thin film 11.
[0027] The thickness of the two-hole alumina thin film is 1 μm, the outer diameter is 2 mm, and the pore diameters of the hole 7 and the hole 8 are 0.2 mm.
[0028] The upper hole 3 of the four-hole hafnium oxide tube is filled with a tungsten-rhenium 26 alloy wire 10, and the lower hole 5 is filled with a tungsten wire 9.
[0029] On the upper surface of the four-hole hafnium oxide tube 1, a positive tungsten thin film 13 and a negative tungsten rhenium 26 thin film 11 are respectively deposited by magnetron sputtering. The positive tungsten thin film 13 covers the lower hole 5 and is led by a tungsten wire 9, and the negative tungsten rhenium 26 thin film 11 covers the upper hole 3 and is led by a tungsten rhenium 26 alloy wire 10. The positive tungsten thin film 13 and the negative tungsten rhenium 26 thin film 11 form a temperature measurement node 12. The specific process parameters are as follows: sputtering power 150 watts, sputtering time 20 minutes, downtime 10 minutes, and the number of cyclic sputtering times is 2 - 3 times.
[0030] An alumina thin film 6 is prepared on the upper surface of the four-hole hafnium oxide tube 1 by magnetron sputtering. The specific process parameters are as follows: sputtering power 150 watts, sputtering time 40 minutes, downtime 20 minutes, and the number of cyclic sputtering times is 25 - 35 times. The magnetron sputtering process has high density and uniformity. On the upper surface of the four-hole hafnium oxide tube, a double-hole alumina thin film covers the left hole 2 and the right hole 4 regions to form an additional thermal insulation layer.
[0031] A tungsten wire 9 is inserted into the left hole 2 of the four-hole hafnium oxide tube, and a tungsten rhenium 26 alloy wire 10 is inserted into the right hole 4.
[0032] On the upper surface of the double-hole alumina thin film, a positive tungsten thin film 13 and a negative tungsten rhenium 26 thin film 11 are sputtered at the positions of the left hole 3 and the right hole 4 respectively. The deposition of both thin films uses the magnetron sputtering process to ensure the uniformity and high quality of the thin films. The specific process parameters are as follows: sputtering power 150 watts, sputtering time 20 minutes, downtime 10 minutes, and the number of cyclic sputtering times is 2 - 3 times. In the left hole 3 region, the positive tungsten thin film 13 covers and is connected to the tungsten wire 9; in the right hole 4 region, the negative tungsten rhenium 26 thin film 11 covers and is connected to the tungsten rhenium 26 alloy wire 10. A temperature measurement node 12 is formed at the contact of the positive tungsten thin film 13 and the negative tungsten rhenium 26 thin film 11.
[0033] This tungsten rhenium thin film heat flux sensor based on temperature gradient can accurately measure the heat flux change in a high-temperature environment. Through the contact points of the positive and negative tungsten thin films and the tungsten rhenium 26 thin film, the sensor can generate a measurable voltage signal according to the change of the temperature gradient. The design of the four-hole hafnium oxide tube and the deposition process of the tungsten thin film and the tungsten rhenium 26 thin film ensure the high sensitivity, stability and long life of the sensor.
[0034] This heat flux sensor is suitable for heat flux measurement in high-temperature environments, such as aerospace, nuclear industry, wind tunnel experiments, laser testing and other application fields. Through accurate temperature gradient measurement, this sensor can provide reliable data support for heat flux analysis, energy efficiency evaluation and optimization of temperature control systems.
[0035] For the measurement of high-temperature and high-pressure gas temperature in the present invention, during the test process, the sensor responds normally, and the test data is as Figure 4 shown.
[0036] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the embodiments of the present invention. Thus, if these modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these changes and modifications.
Claims
1. A thin film heat flow sensor based on temperature gradient, characterized in that: It comprises a four-hole hafnium oxide tube (1), a double-hole aluminum oxide film (6), a positive electrode tungsten film (13), a negative electrode tungsten-rhenium 26 film (11), a tungsten-rhenium 26 alloy wire (10) and a tungsten wire (9). The four-hole hafnium oxide tube (1) is a fixed support structure, the double-hole aluminum oxide film (6), the positive electrode tungsten film (13) and the negative electrode tungsten-rhenium-26 film (11) are fixedly installed on the four-hole hafnium oxide tube (1), the four-hole hafnium oxide tube (1) is divided into a left hole (2), a right hole (4), an upper hole (3) and a lower hole (5), the double-hole aluminum oxide film (6) is a heat-insulating structure, and the double-hole aluminum oxide film (6) contains a hole (7) and a hole (8); A positive electrode tungsten film (13) and a negative electrode tungsten-rhenium-26 film (11) are deposited on the upper surface of the four-hole hafnium oxide tube (1) at the positions of the lower hole (5) and the upper hole (3), respectively; the positive electrode tungsten film (13) covers the lower hole (5) and is led by a tungsten wire (9); and the negative electrode tungsten-rhenium-26 film (11) covers the upper hole (3) and is led by a tungsten-rhenium-26 alloy wire (10); A positive tungsten film (13) and a negative tungsten-rhenium 26 film (11) are deposited on the upper surface of the double-porous alumina film (6) at the positions of the left hole (2) and the right hole (4), respectively; the positive tungsten film (13) covers the left hole (3) and is connected via a tungsten wire (9); the negative tungsten-rhenium 26 film (11) covers the right hole (4) and is connected via a tungsten-rhenium 26 alloy wire (10).
2. The thin film heat flow sensor based on temperature gradient according to claim 1, characterized in that: The positive electrode tungsten film and the negative electrode tungsten rhenium 26 film form a plurality of temperature measurement nodes through contact, which are used to realize the sensing function based on the temperature gradient.
3. The thin film heat flow sensor based on temperature gradient according to claim 1, characterized in that: The deposition of the positive electrode tungsten film and the negative electrode tungsten rhenium 26 film both adopts a magnetron sputtering process to ensure the uniformity and high quality of the film.
4. The thin film heat flow sensor based on temperature gradient according to claim 1, characterized in that: The double-hole aluminum oxide film on the surface of the four-hole hafnium oxide tube is prepared by a magnetron sputtering process, and its thickness is 1 micron.
5. The thin film heat flow sensor based on temperature gradient according to claim 3, characterized in that: The specific process parameters are: sputtering power of 150 watts, sputtering time of 20 minutes, downtime of 10 minutes, and sputtering cycle number of 2-3 times.
6. The thin film heat flow sensor based on temperature gradient according to claim 4, characterized in that: The specific process parameters are: sputtering power of 150 watts, sputtering time of 40 minutes, downtime of 20 minutes, and number of sputtering cycles of 25-35 times. The magnetron sputtering process has high density and uniformity.
7. The thin film heat flow sensor based on temperature gradient according to claim 1, characterized in that: The four-hole hafnium oxide tube has a diameter of 2 mm and a hole diameter of 0.2 mm.
8. The thin film heat flow sensor based on temperature gradient according to claim 1, characterized in that: The outer diameter of the double-porous alumina film is 2 mm and the pore size is 0.2 mm.