399results about "Thermometer with A/D converters" patented technology

A thermometer system and method that rapidly predict body temperature based on the temperature signals received from a temperature sensing probe when it comes into contact with the body. A nonlinear, multi-parameter curve fitting process is performed and depending on the errors in the curve fit, parameters are changed or a prediction of the temperature is made. Criteria exist for the differences between the curve fit and the temperature data. The processor switches to a Continuous Monitor State if the curve fit over a limited number of time frames is unacceptable. Determining the start time on which the measurement time frame for prediction is based is performed by tissue contact threshold coupled with a prediction time delay.

A temperature measuring device of a power semiconductor apparatus that accurately detects chip temperature even where a gradient of the measured characteristic line segment is different from a designed gradient, including a chip temperature detecting circuit that includes an A/D converter delivering a measurement value of a digital converted forward voltage across a temperature detecting diode and an operational processing unit for calibration and chip temperature calculation. In calibration processing, different known reference voltages are applied by a reference connected in place of the diode and a gradient of the line segment connecting the measurement values is calculated. The gradient is stored in a memory with an offset correction value that is one of the measurement values. A chip temperature is calculated based on a forward voltage across the diode calculated based on the measurement value and the stored values of the gradient and the offset correction value.

A circuit and method for providing temperature data indicative of a temperature measured by a temperature sensor. The circuit is coupled to the temperature sensor and configured to identify for a coarse temperature range one of a plurality of fine temperature ranges corresponding to the temperature measured by the temperature sensor and generate temperature data that is provided on an asynchronous output data path.

A system and method is provided for a high accuracy digital temperature sensor (DTS). The system includes a differential analog temperature sensor based on bipolar junctions, providing an output signal obtained as the difference between the V_BE of two bipolar junctions. This signal is converted into the digital domain and compared to N−1 threshold digital values for providing piece-wise linear error correction for the variations with temperature of the different error sources within the DTS. This system and method advantageously improve the accuracy of a DTS over an extended temperature range.

A temperature information output apparatus includes: a first comparison unit provided to match with a specific row in a pixel array unit and receiving and comparing an analog pixel signal output from a pixel and a reference signal having a ramp waveform having a predetermined inclination and a signal period; a first count unit carrying out a count operation during a count period within a reset period and a count period within a signal period; a first data output unit outputting the pixel data based on a count value obtained by the first count unit; a local voltage/temperature signal generating unit generating a local voltage and a temperature signal; a second comparison unit receiving and comparing the temperature signal and the reference signal; a second count unit carrying out a count operation during a count period within a reset period and a count period within a signal period; and a second data output unit outputting temperature data based on a count value obtained by the second count unit.

A temperature sensor device and method of sensing temperature are disclosed. The device and method include generating a reference voltage inversely correlated to the temperature, generating a plurality of analysis voltages correlated to the temperature using a reference current, comparing the reference voltage to each of the plurality of analysis voltages, and generating a temperature estimate based on the comparison. The device and method may also include a method to selectively bypass various resistors in a resistor stack used to generate the various analysis voltages. Another embodiment of the present invention comprises a semiconductor device including at least one temperature sensor according to the invention described herein. The temperature sensor and method of sensing temperature may be incorporated into a semiconductor device, which may be fabricated on a semiconductor wafer and included in an electronic system.

A temperature sensor that senses a temperature on the basis of a relaxation oscillator, includes: a bias circuit unit that outputs a bias current increasing with an increase in temperature; a capacitor voltage unit that charges a capacitor with the bias current and discharges the current when receiving a control signal; a pulse generating unit that outputs a pulse when the voltage of the capacitor is higher than a reference voltage, changes the pulse width of the pulse, and transmits the pulse corresponding to the control signal to the capacitor voltage unit; and a counter unit that counts and outputs, as a digital value, the number of pulses outputted from the pulse generating unit, on the basis of a reference frequency.

A digital temperature sensing system and method for converting a test temperature into a digital output signal are disclosed. The system comprises a temperature-to-time circuit for generating a thermally sensitive time signal of which a width varies with the test temperature; an adjustable time reference circuit for generating a time reference signal of which a width changes with the digital set value; a time comparator for generating a time comparison signal according to a width difference between the thermally sensitive time signal and the time reference signal; a logic control circuit for adjusting the digital set value of the adjustable time reference circuit according to the time comparison signal so that the width of the thermally sensitive time signal and the width of time reference signal are close enough or substantially equal.

A thermal sensor includes a comparator having a first and second input nodes. A reference voltage generator is electrically coupled with the first input node. The reference voltage generator is configured to provide a reference voltage that is substantially temperature-independent. A temperature sensing circuit is electrically coupled with the second input node. The temperature sensing circuit is configured to provide a temperature-dependent voltage. The temperature sensing circuit includes a current mirror. A first metal-oxide-semiconductor (MOS) transistor is electrically coupled between the current mirror and ground. A first resistor is electrically coupled with the current mirror. A second MOS transistor is electrically coupled with the first resistor in series. The second MOS transistor and the first resistor are electrically coupled with the first MOS transistor in a parallel fashion.

A system and method for sensing the temperature of a device. This includes the establishment of a programmable current from an on-chip source, which in turn is used to produce a temperature dependent voltage from a temperature dependent resistive device. The temperature dependent resistive device is thermally coupled to a device for which the temperature is to be sensed. The temperature dependent voltage produced is converted to a digital value and equated to the temperature of the device.

An embodiment of a temperature sensor providing a digital signal representative of temperature comprises a measurement unit providing a first measurement current equal to the sum of at least a first current proportional to temperature and of a second current; a comparator capable of providing a comparison signal which depends on the comparison between the first current and the difference between a third current and the second current; a coding unit receiving the comparison signal and providing said digital signal; a digital-to-analog converter capable of providing the second current and the third current, said difference corresponding to the conversion of said digital signal; and a unit for providing a reference voltage.

A temperature detecting circuit is provided. The temperature detecting circuit includes a reference and detection voltage generator for generating a reference voltage corresponding to a first and a second reference current, and changing first to M-th (M being a natural number) detection currents based on first to M-th temperature detection codes to generate first to M-th detection voltages corresponding to the changed first to M-th detection currents and the second reference current; a temperature detection signal generator for comparing each of the first to M-th detection voltages with the reference voltage to generate first to M-th temperature detection signals; and a temperature detection controller for detecting an operation temperature of a semiconductor device while changing the first to M-th temperature detection codes in response to the first to M-th temperature detection signals from the temperature detection signal generator.

An environmental information measurement device includes: a power source unit; an environmental information detector; a timer; and a controller. The power source unit generates, from an electromagnetic wave received, a power source voltage to be supplied to a load. The load includes the environmental information detector, the timer, and the controller. The environmental information detector includes a detector including a circuit element having an impedance or an electrostatic capacitance that varies according to a physical amount detected under an environment at a measurement target point, and outputs a signal that varies according to a response characteristic of the detector. The timer measures a duration from the time when measurement is initiated to the time when a voltage of the signal becomes a predetermined detection voltage. The controller controls an operation of the environmental information detector.

A temperature sensor circuit has a reference voltage generator that is trimmable at two temperatures for increased accuracy. The reference voltage generation section generates a reference voltage, the level of which is trimmable. A voltage divider section is connected to receive the reference voltage from the reference voltage generation section and generate a plurality of comparison voltage levels determined by the reference voltage and a trimmable resistance. An analog-to-digital converter can then be connected to a temperature dependent voltage section to receive the temperature dependent output voltage, such as a proportional to absolute temperature type (PTAT) behavior, and connected to the voltage divider section to receive the comparison voltage levels. The analog to digital converter generates an output indicative of the temperature based upon a comparison of the temperature dependent output voltage to the comparison voltage levels.

A digital temperature sensor and a system and a method for measuring a temperature are provided. The system includes a reference signal generator including one or more resistance elements; a temperature sensor including a plurality of discrete resistance elements arranged parallel with one another; a multiplexer multiplexing the plurality of discrete resistance elements and the reference resistance element so that the plurality of discrete resistance elements sequentially distribute a power voltage together with the reference resistance element; a comparator having the voltages distributed by the reference resistance element and a discrete resistance element selected by the multiplexer; and a counter counting sequential switchings of the multiplexer. The counter information of the output level transit time of the comparator is provided to the controller, and the system obtains temperature information according to temperature change information from turn information of the discrete resistance elements according to the counter information.

A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.

A temperature detecting device includes a current source, a plurality of resistors, a binary counter, a multiplexer, a comparator and a control logic. The current source provides a PTAT current. The resistors provide m voltage signals with ascending or descending voltages. The binary counter generates a binary select signal having (n+1) bits. The m voltage signals are selectively outputted from the multiplexer as a multiplexer output signal according to the binary select signal, wherein 2ⁿ<m<2ⁿ⁺¹. The comparator is used for comparing the multiplexer output signal with a reference voltage, thereby generating a comparing signal. The control logic is for issuing the start signal. If the comparing signal has a level change, the control logic controls the binary counter to record the binary select signal as a binary temperature signal. The reference voltage does not vary with temperature.