185results about "Thermometer with A/D converters" patented technology

The invention discloses a wireless temperature measurement system based on the Internet of Things, and the system comprises the steps: S1, at least one temperature measurement node which comprises a temperature sensor, a radio frequency identification module, a local electromagnetic interference detection module, and a self-adaptive frequency hopping control module; s2, a wireless data transmission module which is electrically connected with the temperature measurement nodes and is used for transmitting temperature data and interference detection data; s3, the central processing unit receives the temperature data and the interference detection data through the wireless data transmission module, and stores and processes the temperature data and the interference detection data; and S4, the power supply module provides working electric energy for the temperature measuring nodes, the wireless data transmission module and the central processing unit. The system has the advantages of being stable in data transmission, high in anti-interference capability, wide in coverage range and high in temperature monitoring precision.

An apparatus for digitizing an optical signal comprises: an optical detector to detect an optical signal and to generate an electric signal corresponding to the optical signal; an envelope curve detector to determine the amplitude of the electric signal or a modified electric signal resulting from the electric signal, and to supply an amplitude signal corresponding to the amplitude; an analog to digital converter to digitize the amplitude signal and to supply a corresponding digitized amplitude signal; and a variable voltage source to calibrate the envelope curve detector.

The invention discloses a low-power-consumption small-area on-chip temperature sensor based on an MOS tube and a method thereof. Comprising a temperature sensing circuit and an analog-to-digital conversion circuit which are connected with each other, the temperature sensing circuit is used for generating a voltage signal related to the temperature and outputting the voltage signal to the analog-to-digital conversion circuit to achieve digital quantization of the temperature, and the output end of a CTAT branch is connected to the input end of a switched capacitor amplifier through a buffer. The output end of the switched capacitor amplifier is connected to the non-inverting input end of the comparator, the output end of the PTAT branch is connected to the inverting input end of the comparator, the output end of the comparator is connected with the input end of the successive approximation logic unit, and the output end of the successive approximation logic unit is connected to the switched capacitor amplifier. According to the temperature sensing circuit structure, the problem of power supply sensitivity existing when voltage is generated is effectively solved, reference signals do not need to be additionally generated in the quantization process, and the problem of error accumulation is avoided.

A method for determining temperature of a chip, includes generating a first voltage and a second voltage using a pair of bipolar-junction transistors, and generating a third voltage using another bipolar-junction transistor. When a most recent bit of a bitstream is a logic-zero, the difference between the first and second voltages is sampled using a switched-capacitor input-sampling circuit, and a difference between the first and second voltages is integrated, to produce a proportional-to-absolute-temperature voltage. The proportional-to-absolute-temperature voltage is quantized to produce a next bit of the bitstream. When the most recent bit of the bitstream is a logic-one, the third voltage is sampled using the switched-capacitor input-sampling circuit, and the third voltage is integrated, to produce a complementary-to-absolute-temperature voltage. The complementary-to-absolute-temperature voltage is quantized to produce a next bit of the bitstream. The bitstream is filtered and decimated to produce an output code representative of the temperature of the chip.

A temperature-sensing circuit is provided, which includes: a search-control circuit, a voltage-reference circuit, a CTAT (complementary to absolute temperature) circuit, a digital-to-analog converter (DAC) circuit, a comparison circuit, and an SAR (successive approximation register) circuit. The search-control circuit generates a reference-voltage selection signal according to a plurality of control signals. The voltage-reference circuit selects a first reference voltage from a plurality of candidate reference voltages according to the reference-voltage selection signal, and provides a second reference voltage. The CTAT circuit converts the second reference voltage into a first comparison voltage. The DAC circuit converts the first reference voltage into a second comparison voltage. The comparison circuit compares the first comparison voltage and the second comparison voltage to generate a comparison-result signal. The SAR control circuit outputs each bit of a temperature-segment signal of an operating temperature according to the comparison-result signal. The control signals include the temperature-segment signal.

The invention relates to the field of temperature acquisition systems, and discloses a high-precision sampling processing method based on multi-model temperature sensors, and the method comprises the steps: obtaining an original ADC data block of a temperature sensor, and extracting a dynamic feature fingerprint; analyzing the dynamic feature fingerprints to determine a model probability vector characterizing a known working mode and a novelty score characterizing an unknown working mode; according to the model probability vector, the estimation results of the multiple extended Kalman filters are fused through an interactive multi-model algorithm, a temperature value is obtained, and a residual sequence is generated; and updating the system model online according to the novelty score or the residual sequence. The system comprises a data acquisition and feature extraction module, a sensor state sensing module, a self-adaptive temperature estimation module and a system online evolution module. According to the method, a closed-loop processing flow with state sensing and online evolution capabilities is constructed, so that the problem that the precision of a traditional fixed model is reduced under a complex working condition is solved.

The invention relates to a temperature testing device and system for testing a battery cell and a related method. In some embodiments, the temperature testing devices each include a pair of spaced apart pressure plate, test plate, and pressure clamp. The test board may include a working surface having a plurality of recesses facing a face of the battery cell to be tested, a temperature sensor in each of the plurality of recesses, and an electronic circuit in operative communication with each of the temperature sensors. In some embodiments, the pressure clamp is a constant pressure mechanism. In some embodiments, the pressure clamp is a constant gap pressure mechanism. The invention further discloses a system comprising the temperature testing device and a testing method using the temperature testing device.

In some embodiments, temperature-testing apparatuses that each include a pair of spaced-apart pressure plates, a testing plate, and a pressure fixture. The testing plate may comprise a working face with a plurality of recesses that confronts a face of the battery cell being tested, a temperature sensor in each one of the plurality of recesses, and electronic circuitry in operative communication with each of the temperature sensors. In some embodiments, the pressure fixture is a constant-pressure mechanism. In some embodiments, the pressure fixture is a constant-gap pressure mechanism. Systems containing such temperature-testing apparatuses and methods of testing with such temperature-testing apparatuses are also disclosed.

A new energy vehicle, a vehicle-mounted charging device, a temperature measurement circuit, and a temperature measurement method. The circuit comprises: a first temperature sensor (TH1), which acquires a first analog quantity temperature signal of a positive electrode connection terminal; a second temperature sensor (TH2), which acquires a second analog quantity temperature signal of a negative electrode connection terminal; a third temperature sensor (TFH), which is provided in a housing of the vehicle-mounted charging device of the new energy vehicle and acquires an analog quantity ambient temperature signal of the vehicle-mounted charging device of the new energy vehicle; an analog-to-digital conversion module (10), which correspondingly converts the first analog quantity temperature signal, the second analog quantity temperature signal, and the analog quantity ambient temperature signal into a first digital quantity temperature signal, a second digital quantity temperature signal, and a digital quantity ambient temperature signal; and a micro-control unit (20), which corrects the first digital quantity temperature signal and the second digital quantity temperature signal according to the digital quantity ambient temperature signal. The accuracy of measuring the charging temperature of the vehicle-mounted charging device of the new energy vehicle can be improved.

The invention discloses a thermistor and thermocouple compatible high-precision temperature measurement method, relates to a high-precision temperature measurement method, and constructs a hardware temperature measurement circuit. The temperature measuring circuit comprises a temperature sensor, a digital-to-analog conversion chip, a digital isolation chip and a single-chip microcomputer. The temperature sensor is composed of a thermistor and a thermocouple which are connected to the two ends of the digital-to-analog conversion chip respectively. The single-chip microcomputer is responsible for taking out temperature data in the digital-to-analog conversion chip and then taking out corresponding temperature data by matching different data processing algorithms according to the types of accessed sensors, a cold junction compensation part related to the thermocouple can be realized by using an internal temperature sensor of the digital-to-analog conversion chip, and the thermocouple and the thermal resistor are adaptive to different precision and range scenes; according to the compatible temperature measurement method provided by the invention, convenience is provided for industrial scene use, the same interface can be compatible with different types of sensors, disconnection detection and power frequency suppression functions are provided, and the compatible temperature measurement method can be applied to complex industrial high-precision temperature measurement scenes, and is high in precision and strong in anti-interference capability.

Systems, devices, and methods related to temperature sensors for electronic devices are provided. An example temperature sensor device includes analog temperature sensor circuitry to generate a plurality of voltages indicative of a temperature; an analog-to-digital converter (ADC) disposed downstream of the analog temperature sensing circuitry; switched-capacitor amplifier circuitry disposed before the ADC, the switched-capacitor amplifier circuitry comprising a single-ended amplifier to amplify the plurality of voltages with respect to a common voltage; a first switch coupled between the analog temperature sensor circuitry and the switched-capacitor amplifier circuitry to provide a sampling phase and an integration phase; and digital calculation circuitry to calculate a temperature value based on the plurality of amplified voltages.

A system and method provide on-line, wafer-level, die-level, or package-level thermal calibration of an integrated measurement resistor with a single temperature insertion. The system includes a measurement resistor integrated on a substrate with an unknown temperature coefficient and a temperature reference sensor thermally coupled to the measurement resistor. A measurement circuit measures an indication of a resistance of the measurement resistor. An electrically-controllable integrated heat source is operated by a controller to change a temperature of the measurement resistor and the temperature reference sensor and stores values of the resistance indication and the sensed temperature corresponding to multiple temperatures of the temperature of the measurement resistor and the temperature reference sensor. The controller generates or approximates a mathematical relationship between the resistance of the measurement resistor and the temperature of the measurement resistor and the temperature reference sensor from the stored values.

The present disclosure describes embodiments of a temperature sensor with full band PSR. The temperature sensor can include a reference voltage generator, a temperature circuit, and an analog-to-digital converter (ADC). The reference voltage generator is configured to generate a reference voltage. The temperature circuit is configured to operate under a substantially constant bias current and to generate a temperature signal proportional to temperature. The ADC is electrically coupled to the reference voltage generator and the temperature circuit and configured to convert the temperature signal to a digital representation based on a sampling frequency. The ADC comprises a frequency generator configured to generate a modulation frequency having a random variation. The sampling frequency is modulated by the modulation frequency.

The present invention provides a semiconductor device comprising a storage chip and a temperature detection module for detecting a temperature of the storage chip. When the temperature detected by the temperature detection module reaches a set threshold, the storage chip is activated. The temperature detection module comprises: a temperature detection unit for detecting a temperature of the storage chip and outputting an analogue signal corresponding to the temperature; an A / D conversion module having an input terminal and an output terminal, wherein the input terminal receives the analogue signal output by the temperature detection unit, the output terminal outputs a digital signal, and the A / D conversion module is configured to convert the analogue signal output by the temperature detection unit to the digital signal. The present invention utilizes the temperature detection module to detect the temperature of the storage chip so as to provide a reference for the activation and operation of the storage chip, avoiding the activation and operation of the storage chip under low temperatures, shortening write time, and improving the stability of the storage chip write; the temperature detection module has a simple circuit structure and is easy for implementation, with a small occupied area, exerting no influence on the active area of the storage chip.

Various techniques to eliminate the error caused by variable β coupled with a series resistance in BJTs are described. Multiple known currents are applied to a terminal of the BJT and a corresponding VBE is generated. A resistor R is coupled in series with a base or emitter of the BJT and an analog-to-digital converter (ADC) is used to measure the voltage across the resistor R for each of the known currents. These voltages are used to determine ratios of β change, which are then used to determine a temperature of the BJT.

The present invention discloses an ultra-small area on-chip intelligent temperature sensor based on MOS transistors and a design method. By replacing the CWT reference source with a constant temperature with a CTAT reference source that is negatively correlated with temperature changes, quantifying the PTAT induced voltage that is positively correlated with temperature changes, and then analyzing the Taylor series of the output data temperature function, the MOS transistor parameters of the CTAT branch are configured to reduce the nonlinearity introduced by the CTAT reference source. The temperature sensor structure in the present invention accesses temperature sensing modules at different positions through switch control to read temperature information at different positions, and by multiplexing the quantization module that occupies the main area, the requirement of ultra-small area can be met. The present invention can be applied as a temperature monitoring module in fields such as on-chip systems and the Internet of Things.

Embodiments of the present disclosure relate to controlled curvature correction in a high-accuracy thermal sensor. A circuit device generates base-to-emitter voltages of two BJTs biased at different current densities, base-to-emitter voltages of BJTs biased so that the base-to-emitter voltages are complementary to absolute temperature and have curvature nonlinearity across temperature, and base-to-emitter voltages of two BJTs biased by a constant current that is independent of temperature and a current that is proportional to absolute temperature. A sampling circuit samples these voltages and provides the voltages to the input of a loop filter. The filter output is quantized to produce a bit stream. The sampling circuit: when the received bit of the bit stream is zero, causes the integration of Vbe1-Vbe2 to produce a voltage proportional to absolute temperature; when the received bit of the bit stream is one, causes the integration of Vbe2_c-Vbe_Vbe1_c to produce a negative voltage complementary to absolute temperature without nonlinearity across temperature.

A new energy vehicle, a vehicle-mounted charging device, a temperature measurement circuit, and a temperature measurement method. The circuit comprises: a first temperature sensor (TH1), which acquires a first analog quantity temperature signal of a positive electrode connection terminal; a second temperature sensor (TH2), which acquires a second analog quantity temperature signal of a negative electrode connection terminal; a third temperature sensor (TFH), which is provided in a housing of the vehicle-mounted charging device of the new energy vehicle and acquires an analog quantity ambient temperature signal of the vehicle-mounted charging device of the new energy vehicle; an analog-to-digital conversion module (10), which correspondingly converts the first analog quantity temperature signal, the second analog quantity temperature signal, and the analog quantity ambient temperature signal into a first digital quantity temperature signal, a second digital quantity temperature signal, and a digital quantity ambient temperature signal; and a micro-control unit (20), which corrects the first digital quantity temperature signal and the second digital quantity temperature signal according to the digital quantity ambient temperature signal. The accuracy of measuring the charging temperature of the vehicle-mounted charging device of the new energy vehicle can be improved.

Various techniques are described to accurately measure a ratio between the two currents supplied by a current source in a BJT temperature sensor. In an approach, a resistor is included between the current source and the emitter terminal of the BJT. An analog-to-digital converter (ADC) measures the voltage across the resistor R for each of the two currents. These voltages are used to determine current ratios, which are then used to determine a temperature of the BJT. The techniques are not limited to use with BJTs and are applicable to other semiconductor devices including diodes.

Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference ΔVref between the reference voltage of the band gap reference circuit at a predetermined temperature and a median value of the reference voltages of the plurality of samples, a difference ΔVptat between the absolute temperature proportional voltage of the band gap reference circuit at a predetermined temperature and a median value of the absolute temperature proportional voltages of the plurality of samples is calculated.

The present invention discloses a platinum resistance temperature measurement circuit and method. The circuit has the function of eliminating parasitic thermoelectric potential. The circuit includes an analog-to-digital conversion chip, a first single-pole double-throw switch, a second single-pole double-throw switch, a reference circuit, a circuit to be measured, and a microcontroller. The circuit to be measured includes a platinum resistor, a first voltage follower, and a second voltage follower. One end of the first voltage follower and the second voltage follower are respectively connected to the two ends of the platinum resistor, and the other ends of the first voltage follower and the second voltage follower are respectively connected to the two input ends of the analog-to-digital conversion chip. The reference circuit includes a reference resistor, which is connected in series with the platinum resistor, and the two ends of the reference resistor are respectively connected to the two reference input ends of the analog-to-digital conversion chip. Through this temperature measurement circuit and method, the influence of parasitic thermoelectric potential on the platinum resistor temperature measurement circuit can be effectively eliminated, thereby improving the accuracy of temperature measurement.

One temperature sensor module (100), comprising: a temperature sensor element (1) whose resistance value changes according to the temperature of a target medium; and a signal processing circuit (2) which is connected to the temperature sensor element (1) and which outputs an electrical signal which correlates with the resistance value of the temperature sensor element (1), wherein the signal processing circuit (2) comprises a series connection resistor (3) which is connected in series with the temperature sensor element (1) and whose resistance value changes according to a command signal that has been transmitted, a temperature detection circuit (4) that detects and outputs a temperature of the signal processing circuit (2), a first analog-to-digital conversion circuit (5) that converts an output signal from the temperature detection circuit (4) into a digital signal and outputs the digital signal a memory (7) which stores a series connection resistance data element about a relationship between a temperature and the resistance value of the series connection resistor (3), a digital signal processing circuit (6) which uses the series connection resistor data element stored in the memory (7) to calculate a digital command signal on the basis of the digital signal indicating the temperature of the signal processing circuit (2) in order to maintain the resistance value of the series connection resistor (3) at a constant value, and outputs the digital command signal, and a digital-to-analog conversion circuit (8) that converts the digital command signal into an analog command signal and outputs the analog command signal to the series connection resistor (3).

Embodiments of this disclosure relate to analog-to-digital converter circuits, corresponding systems, and methods. In one embodiment, a circuit includes N sensing channels. Each channel includes a pair of first primary sensing nodes and second redundant sensing nodes. N analog-to-digital converters (ADCs) are coupled to the first sensing nodes, wherein digital processing circuitry is coupled to the N ADCs. A pair of multiplexers are coupled to the second sensing nodes and to the N ADCs, wherein another ADC is coupled to the output of the second multiplexer. Error checking circuitry is coupled to the output of the second multiplexer, and the other ADC compares a first digital value with a second digital value at each of a series of N time windows, the digital value being generated by a digital conversion of an analog sensing signal at one of the first sensing nodes and an analog sensing signal at a second sensing node paired with the selected first sensing node.

To provide a semiconductor module capable of outputting a signal indicating a temperature to the outside.SOLUTION: A semiconductor module comprises: first and second terminals; a drive circuit which includes n pairs of power source-side first switching elements and ground-side second switching elements; at least one temperature sensor which detects a temperature of at least one switching element in the n pairs of first and second switching elements; a control circuit which controls switching of the n pairs of first and second switching elements; and an output circuit which outputs a signal indicating the temperature via the first and second terminals.SELECTED DRAWING: Figure 1

A system may include a device configured to be implanted within a recipient and that includes an integrated circuit. The integrated circuit may include a first node configured to provide a bandgap reference voltage and a second node configured to provide a CTAT voltage. The first node may be coupled to a first input of an ADC and the second node may be coupled to a second input of the ADC. The system may also include a processor communicatively coupled to an output of the ADC. The processor may be configured to determine, based on the output of the ADC, the CTAT voltage. The processor may be further configured to determine, based on the CTAT voltage, a temperature of the device.

The described technology is generally directed towards an electrical current based temperature sensor and temperature information digitizer, referred to herein as a “temperature digitizer”. The temperature digitizer can include a sensor core, a digital to analog converter, a current comparator, and a processor. The processor can be configured to perform multiple current comparisons using the sensor core, digital to analog converter, and current comparator, and the processor can generate a digital code that reflects the results of the multiple current comparisons. The digital code represents the temperature.

The present disclosure relates to a method for implementing a VPTAT multiplier in a high-precision thermal sensor. A temperature sensing circuit and a switched capacitor circuit selectively sample ΔVbe and Vbe voltages and provide the sampled voltages to the input of an integrator. A quantization circuit quantizes the output of the integrator to generate a bit stream. When the latest bit of the bit stream is a logic zero, the operation includes sampling and integrating ΔVbe a first given number of times to generate a voltage proportional to the absolute temperature. When the latest bit of the bit stream is a logic one, the operation includes sampling and integrating Vbe a second given number of times to generate a voltage complementary to the absolute temperature. A low-pass filter and a decimator filter and decimate the bit stream generated by the quantization circuit to generate a signal indicating the temperature of a chip in which the temperature sensing circuit is integrated.

Apparatuses, systems, and methods for temperature sensors are provided, including temperatures sensors using a controlled oscillator. An exemplary temperature sensor may comprise: a clock generating circuit comprising: a bandgap circuit to generate a first input signal that varies based on a temperature; a first controlled oscillator configured to receive the first input signal and generate a first clock signal; a first counter configured to receive the first clock signal and a first enable signal, wherein the first counter generates a first count signal based on the first clock signal and the first enable signal; a processor and a non-transitory memory including computer coded instructions, the computer coded instructions, with the processor, cause the processor to: determine the temperature based at least on the first count signal; and generate a temperature signal based at least on the temperature, wherein the temperature signal is a binary signal.

The present disclosure relates to a high precision temperature measurement circuit capable of easy calibration. Sensing calibration techniques are disclosed for permanently recording a calibration value of a measured value when manufacturing a temperature measurement circuit. An ambient simulation calibration circuit element configured to generate a calibration current simulating an ambient temperature is added to the temperature measurement circuit. The environmental simulation calibration circuit element operates to vary an output current of the temperature sensing circuit by an amount according to an ambient temperature in accordance with a set state value input from an external calibration device during plant calibration. During factory calibration, an external calibration device calculates a calibration value from an output value measured when changing a setting state of an environmental simulation calibration circuit element, and sets the calibration value in a temperature measurement circuit.

A wearable environmental sensor device (100) includes a temperature / humidity sensor (2) disposed on an wall surface of a housing (1) which is exposed to an environment and configured to measure ambient environmental information around a living body and a protective structure (1c) formed around the temperature / humidity sensor (2). The temperature / humidity sensor (2) is disposed, directly or via a support structure, on or over the wall surface of the housing (1) which is exposed to an environment, wherein the wall surface faces substantially downward from the living body when the wearable environmental sensor device (100) is attached to the living body and the living body is in a standing posture. The protective structure (1c) has respective ventilation holes (10-1, 10-3, 10-4) provided in two or more pairs of opposed surfaces thereof each facing in a direction other than a vertical direction of the living body when the wearable environmental sensor device (100) is attached to the living body and the living body is in the standing posture.