117results about "Thermometer with A/D converters" patented technology

The invention discloses a wireless temperature measurement system based on the Internet of Things, and the system comprises the steps: S1, at least one temperature measurement node which comprises a temperature sensor, a radio frequency identification module, a local electromagnetic interference detection module, and a self-adaptive frequency hopping control module; s2, a wireless data transmission module which is electrically connected with the temperature measurement nodes and is used for transmitting temperature data and interference detection data; s3, the central processing unit receives the temperature data and the interference detection data through the wireless data transmission module, and stores and processes the temperature data and the interference detection data; and S4, the power supply module provides working electric energy for the temperature measuring nodes, the wireless data transmission module and the central processing unit. The system has the advantages of being stable in data transmission, high in anti-interference capability, wide in coverage range and high in temperature monitoring precision.

The invention discloses a low-power-consumption small-area on-chip temperature sensor based on an MOS tube and a method thereof. Comprising a temperature sensing circuit and an analog-to-digital conversion circuit which are connected with each other, the temperature sensing circuit is used for generating a voltage signal related to the temperature and outputting the voltage signal to the analog-to-digital conversion circuit to achieve digital quantization of the temperature, and the output end of a CTAT branch is connected to the input end of a switched capacitor amplifier through a buffer. The output end of the switched capacitor amplifier is connected to the non-inverting input end of the comparator, the output end of the PTAT branch is connected to the inverting input end of the comparator, the output end of the comparator is connected with the input end of the successive approximation logic unit, and the output end of the successive approximation logic unit is connected to the switched capacitor amplifier. According to the temperature sensing circuit structure, the problem of power supply sensitivity existing when voltage is generated is effectively solved, reference signals do not need to be additionally generated in the quantization process, and the problem of error accumulation is avoided.

The invention relates to the field of temperature acquisition systems, and discloses a high-precision sampling processing method based on multi-model temperature sensors, and the method comprises the steps: obtaining an original ADC data block of a temperature sensor, and extracting a dynamic feature fingerprint; analyzing the dynamic feature fingerprints to determine a model probability vector characterizing a known working mode and a novelty score characterizing an unknown working mode; according to the model probability vector, the estimation results of the multiple extended Kalman filters are fused through an interactive multi-model algorithm, a temperature value is obtained, and a residual sequence is generated; and updating the system model online according to the novelty score or the residual sequence. The system comprises a data acquisition and feature extraction module, a sensor state sensing module, a self-adaptive temperature estimation module and a system online evolution module. According to the method, a closed-loop processing flow with state sensing and online evolution capabilities is constructed, so that the problem that the precision of a traditional fixed model is reduced under a complex working condition is solved.

A system and method provide on-line, wafer-level, die-level, or package-level thermal calibration of an integrated measurement resistor with a single temperature insertion. The system includes a measurement resistor integrated on a substrate with an unknown temperature coefficient and a temperature reference sensor thermally coupled to the measurement resistor. A measurement circuit measures an indication of a resistance of the measurement resistor. An electrically-controllable integrated heat source is operated by a controller to change a temperature of the measurement resistor and the temperature reference sensor and stores values of the resistance indication and the sensed temperature corresponding to multiple temperatures of the temperature of the measurement resistor and the temperature reference sensor. The controller generates or approximates a mathematical relationship between the resistance of the measurement resistor and the temperature of the measurement resistor and the temperature reference sensor from the stored values.

The present disclosure describes embodiments of a temperature sensor with full band PSR. The temperature sensor can include a reference voltage generator, a temperature circuit, and an analog-to-digital converter (ADC). The reference voltage generator is configured to generate a reference voltage. The temperature circuit is configured to operate under a substantially constant bias current and to generate a temperature signal proportional to temperature. The ADC is electrically coupled to the reference voltage generator and the temperature circuit and configured to convert the temperature signal to a digital representation based on a sampling frequency. The ADC comprises a frequency generator configured to generate a modulation frequency having a random variation. The sampling frequency is modulated by the modulation frequency.

The present invention provides a semiconductor device comprising a storage chip and a temperature detection module for detecting a temperature of the storage chip. When the temperature detected by the temperature detection module reaches a set threshold, the storage chip is activated. The temperature detection module comprises: a temperature detection unit for detecting a temperature of the storage chip and outputting an analogue signal corresponding to the temperature; an A / D conversion module having an input terminal and an output terminal, wherein the input terminal receives the analogue signal output by the temperature detection unit, the output terminal outputs a digital signal, and the A / D conversion module is configured to convert the analogue signal output by the temperature detection unit to the digital signal. The present invention utilizes the temperature detection module to detect the temperature of the storage chip so as to provide a reference for the activation and operation of the storage chip, avoiding the activation and operation of the storage chip under low temperatures, shortening write time, and improving the stability of the storage chip write; the temperature detection module has a simple circuit structure and is easy for implementation, with a small occupied area, exerting no influence on the active area of the storage chip.

Various techniques to eliminate the error caused by variable β coupled with a series resistance in BJTs are described. Multiple known currents are applied to a terminal of the BJT and a corresponding VBE is generated. A resistor R is coupled in series with a base or emitter of the BJT and an analog-to-digital converter (ADC) is used to measure the voltage across the resistor R for each of the known currents. These voltages are used to determine ratios of β change, which are then used to determine a temperature of the BJT.

A new energy vehicle, a vehicle-mounted charging device, a temperature measurement circuit, and a temperature measurement method. The circuit comprises: a first temperature sensor (TH1), which acquires a first analog quantity temperature signal of a positive electrode connection terminal; a second temperature sensor (TH2), which acquires a second analog quantity temperature signal of a negative electrode connection terminal; a third temperature sensor (TFH), which is provided in a housing of the vehicle-mounted charging device of the new energy vehicle and acquires an analog quantity ambient temperature signal of the vehicle-mounted charging device of the new energy vehicle; an analog-to-digital conversion module (10), which correspondingly converts the first analog quantity temperature signal, the second analog quantity temperature signal, and the analog quantity ambient temperature signal into a first digital quantity temperature signal, a second digital quantity temperature signal, and a digital quantity ambient temperature signal; and a micro-control unit (20), which corrects the first digital quantity temperature signal and the second digital quantity temperature signal according to the digital quantity ambient temperature signal. The accuracy of measuring the charging temperature of the vehicle-mounted charging device of the new energy vehicle can be improved.

Various techniques are described to accurately measure a ratio between the two currents supplied by a current source in a BJT temperature sensor. In an approach, a resistor is included between the current source and the emitter terminal of the BJT. An analog-to-digital converter (ADC) measures the voltage across the resistor R for each of the two currents. These voltages are used to determine current ratios, which are then used to determine a temperature of the BJT. The techniques are not limited to use with BJTs and are applicable to other semiconductor devices including diodes.

Before a temperature characteristic of a band gap reference circuit is tested, temperature dependencies of a reference voltage and an absolute temperature proportional voltage for a plurality of samples are measured. When the temperature characteristic is tested, based on a difference ΔVref between the reference voltage of the band gap reference circuit at a predetermined temperature and a median value of the reference voltages of the plurality of samples, a difference ΔVptat between the absolute temperature proportional voltage of the band gap reference circuit at a predetermined temperature and a median value of the absolute temperature proportional voltages of the plurality of samples is calculated.

The present invention discloses a platinum resistance temperature measurement circuit and method. The circuit has the function of eliminating parasitic thermoelectric potential. The circuit includes an analog-to-digital conversion chip, a first single-pole double-throw switch, a second single-pole double-throw switch, a reference circuit, a circuit to be measured, and a microcontroller. The circuit to be measured includes a platinum resistor, a first voltage follower, and a second voltage follower. One end of the first voltage follower and the second voltage follower are respectively connected to the two ends of the platinum resistor, and the other ends of the first voltage follower and the second voltage follower are respectively connected to the two input ends of the analog-to-digital conversion chip. The reference circuit includes a reference resistor, which is connected in series with the platinum resistor, and the two ends of the reference resistor are respectively connected to the two reference input ends of the analog-to-digital conversion chip. Through this temperature measurement circuit and method, the influence of parasitic thermoelectric potential on the platinum resistor temperature measurement circuit can be effectively eliminated, thereby improving the accuracy of temperature measurement.

One temperature sensor module (100), comprising: a temperature sensor element (1) whose resistance value changes according to the temperature of a target medium; and a signal processing circuit (2) which is connected to the temperature sensor element (1) and which outputs an electrical signal which correlates with the resistance value of the temperature sensor element (1), wherein the signal processing circuit (2) comprises a series connection resistor (3) which is connected in series with the temperature sensor element (1) and whose resistance value changes according to a command signal that has been transmitted, a temperature detection circuit (4) that detects and outputs a temperature of the signal processing circuit (2), a first analog-to-digital conversion circuit (5) that converts an output signal from the temperature detection circuit (4) into a digital signal and outputs the digital signal a memory (7) which stores a series connection resistance data element about a relationship between a temperature and the resistance value of the series connection resistor (3), a digital signal processing circuit (6) which uses the series connection resistor data element stored in the memory (7) to calculate a digital command signal on the basis of the digital signal indicating the temperature of the signal processing circuit (2) in order to maintain the resistance value of the series connection resistor (3) at a constant value, and outputs the digital command signal, and a digital-to-analog conversion circuit (8) that converts the digital command signal into an analog command signal and outputs the analog command signal to the series connection resistor (3).

Embodiments of this disclosure relate to analog-to-digital converter circuits, corresponding systems, and methods. In one embodiment, a circuit includes N sensing channels. Each channel includes a pair of first primary sensing nodes and second redundant sensing nodes. N analog-to-digital converters (ADCs) are coupled to the first sensing nodes, wherein digital processing circuitry is coupled to the N ADCs. A pair of multiplexers are coupled to the second sensing nodes and to the N ADCs, wherein another ADC is coupled to the output of the second multiplexer. Error checking circuitry is coupled to the output of the second multiplexer, and the other ADC compares a first digital value with a second digital value at each of a series of N time windows, the digital value being generated by a digital conversion of an analog sensing signal at one of the first sensing nodes and an analog sensing signal at a second sensing node paired with the selected first sensing node.

To provide a semiconductor module capable of outputting a signal indicating a temperature to the outside.SOLUTION: A semiconductor module comprises: first and second terminals; a drive circuit which includes n pairs of power source-side first switching elements and ground-side second switching elements; at least one temperature sensor which detects a temperature of at least one switching element in the n pairs of first and second switching elements; a control circuit which controls switching of the n pairs of first and second switching elements; and an output circuit which outputs a signal indicating the temperature via the first and second terminals.SELECTED DRAWING: Figure 1

A system may include a device configured to be implanted within a recipient and that includes an integrated circuit. The integrated circuit may include a first node configured to provide a bandgap reference voltage and a second node configured to provide a CTAT voltage. The first node may be coupled to a first input of an ADC and the second node may be coupled to a second input of the ADC. The system may also include a processor communicatively coupled to an output of the ADC. The processor may be configured to determine, based on the output of the ADC, the CTAT voltage. The processor may be further configured to determine, based on the CTAT voltage, a temperature of the device.

The described technology is generally directed towards an electrical current based temperature sensor and temperature information digitizer, referred to herein as a “temperature digitizer”. The temperature digitizer can include a sensor core, a digital to analog converter, a current comparator, and a processor. The processor can be configured to perform multiple current comparisons using the sensor core, digital to analog converter, and current comparator, and the processor can generate a digital code that reflects the results of the multiple current comparisons. The digital code represents the temperature.

The present disclosure relates to a method for implementing a VPTAT multiplier in a high-precision thermal sensor. A temperature sensing circuit and a switched capacitor circuit selectively sample ΔVbe and Vbe voltages and provide the sampled voltages to the input of an integrator. A quantization circuit quantizes the output of the integrator to generate a bit stream. When the latest bit of the bit stream is a logic zero, the operation includes sampling and integrating ΔVbe a first given number of times to generate a voltage proportional to the absolute temperature. When the latest bit of the bit stream is a logic one, the operation includes sampling and integrating Vbe a second given number of times to generate a voltage complementary to the absolute temperature. A low-pass filter and a decimator filter and decimate the bit stream generated by the quantization circuit to generate a signal indicating the temperature of a chip in which the temperature sensing circuit is integrated.

Apparatuses, systems, and methods for temperature sensors are provided, including temperatures sensors using a controlled oscillator. An exemplary temperature sensor may comprise: a clock generating circuit comprising: a bandgap circuit to generate a first input signal that varies based on a temperature; a first controlled oscillator configured to receive the first input signal and generate a first clock signal; a first counter configured to receive the first clock signal and a first enable signal, wherein the first counter generates a first count signal based on the first clock signal and the first enable signal; a processor and a non-transitory memory including computer coded instructions, the computer coded instructions, with the processor, cause the processor to: determine the temperature based at least on the first count signal; and generate a temperature signal based at least on the temperature, wherein the temperature signal is a binary signal.

The present disclosure relates to a high precision temperature measurement circuit capable of easy calibration. Sensing calibration techniques are disclosed for permanently recording a calibration value of a measured value when manufacturing a temperature measurement circuit. An ambient simulation calibration circuit element configured to generate a calibration current simulating an ambient temperature is added to the temperature measurement circuit. The environmental simulation calibration circuit element operates to vary an output current of the temperature sensing circuit by an amount according to an ambient temperature in accordance with a set state value input from an external calibration device during plant calibration. During factory calibration, an external calibration device calculates a calibration value from an output value measured when changing a setting state of an environmental simulation calibration circuit element, and sets the calibration value in a temperature measurement circuit.

The disclosure relates to a temperature sensor circuit comprising: a PTAT voltage circuit; a reference current source; a capacitor; a reset switch connected across the capacitor; a comparator configured to compare a voltage across the capacitor to the PTAT voltage and provide a comparator output; a counter circuit configured to increment or decrement an output word depending on the comparator output (U / D), and repeatedly perform the sequential steps of: i) providing a reset signal to momentarily close the reset switch to discharge the capacitor; ii) counting a number of clock cycles corresponding to the output word while the capacitor is charged by the reference current source; and iii) incrementing or decrementing the output word depending on the comparator output, wherein, after repeating the sequential steps, the output word converges to a value corresponding to a temperature of the PTAT voltage circuit.

The application provides a four-wire temperature acquisition and self-checking circuit, which comprises a constant current source generation circuit, a constant current source detection circuit, a first operational amplifier conditioning circuit, a second operational amplifier conditioning circuit, a four-wire temperature acquisition unit and an ADC data conversion and communication control unit; the ADC data conversion and communication control unit comprises an ADC conversion chip A3 for outputting and inputting a reference voltage VREF; the constant current I_TEMP output by the constant current source generation circuit flows through the sampling resistor R10 and the four-wire temperature acquisition unit, and the voltage generated across the sampling resistor R10 is input to the constant current source detection circuit to output the voltage TEMP_V to the ADC conversion chip A3; when the I_TEMP flows through the four-wire temperature measuring element RT in the four-wire temperature acquisition unit, the voltage generated across the four-wire temperature measuring element RT is input to the first operational amplifier conditioning circuit and the second operational amplifier conditioning circuit respectively, and then the stable voltages TEMP_VA and TEMP_VB are output to the ADC conversion chip A3 respectively. The application can improve the temperature measuring precision and the accuracy of detecting the voltages of the circuits, and ensure the normal operation of the system in the case of one-side fault.

An integrated circuit includes a current source, a diode device, a switching circuit, an analog-to-digital converter, and a processing circuit. The current source provides a reference current. The switching circuit causes the diode device to provide a first diode having a first size to receive the reference current during a first period of time, and additionally causes the diode device to provide a second diode having a second size to receive the reference current during a second period of time. The analog-to-digital converter converts a first voltage across the first diode to a first diode voltage value, and converts a second voltage across the second diode to a second diode voltage value. The processing circuit performs an arithmetic operation on the first and second diode voltage values to generate a digital bandgap value.

The invention discloses a goaf temperature monitoring device and method and a readable storage medium, and belongs to the field of goaf temperature monitoring. The problems that the signal transmission distance of an existing goaf temperature monitoring device is limited, signals are prone to being shielded, and the signal conversion precision is not high are solved. According to the technical scheme, the goaf temperature monitoring device comprises a sound collector and a drill hole formed in a goaf, a hole protection steel pipe is placed in the drill hole, a temperature monitoring device is arranged on the hole protection steel pipe, the sound collector is electrically connected with an upper computer, and the upper computer is electrically connected with the sound collector. According to the goaf temperature monitoring method, the goaf temperature monitoring device is adopted, the risk that a steel pipe shields signals is effectively avoided, it is ensured that the signals are not lost in the transmission process, and the accuracy of monitored temperature is improved; the goaf temperature monitoring method is executed when a computer program is operated; the method is applied to goaf temperature monitoring.

Provided in the present invention are a method and system for correcting a temperature error curve of a digital temperature sensor, the method comprising: using a digital temperature sensor to acquire an actual digital temperature output; and using a first-order delta-sigma ADC curve correction parameter table embedded in the digital temperature sensor to correct a temperature error curve of the actual temperature output. Using the first-order delta-sigma ADC curve correction parameter table embedded in the digital temperature sensor to correct the temperature error curve of the actual temperature output comprises: on the basis of the curve correction parameter table in the first-order delta-sigma ADC, selecting an ADC conversion period corresponding to a pre-determined interval in which a measured temperature is located, and correcting a temperature curve slope of the current temperature interval by means of the ADC conversion period; and then selecting a translation parameter of the current temperature interval on the basis of the curve correction parameter table in the first-order delta-sigma ADC, so as to translate an error into a preset range of 0, thus implementing temperature error curve correction for the digital temperature sensor.

A circuit optimization method and system for a digital domain correction of a temperature sensor is provided. The method includes: subjecting negative temperature coefficient voltages Vbep and Vben to a switch timing control, thereby generating a corresponding negative temperature coefficient voltage Vbep and positive temperature coefficient voltage Dvbe as inputs into an operational transconductance amplifier (OTA) that serves as a core circuit of a Sigam-Delt analog-to-digital converter (ADC); and generating, by a switch sampling circuit, Vintx by integrating; inputting the Vintx into a comparator (CMP) to acquire a final ADC output; and sending a feedback through a digital domain to an analog domain control switch logic. The circuit optimization method intelligently finds the optimal temperature factor of different processes through the digital domain correction, thereby acquiring the desired ratio value more accurately. Meanwhile, the circuit optimization method reduces the trim circuit to be implemented in the analog domain.

An integrated circuit includes a current source, a diode device, a switch circuit, an analog-to-digital converter (ADC), and a processing circuit. The current source provides a reference current. The switch circuit enables the diode device to provide a first diode with a first size for receiving the reference current during a first interval, and enables the diode device to provide a second diode with a second size for receiving the reference current during a second interval. The ADC converts a first voltage across the first diode into a first diode voltage value, and converts a second voltage across the second diode into a second diode voltage value. The processing circuit performs an arithmetic operation upon the first diode voltage value and the second diode voltage value to generate a digital bandgap value.

The invention discloses a multi-point temperature acquisition method, which comprises the following steps of: firstly, sampling the temperature of a single point, outputting a corresponding analog signal, entering a comparator, and if an external analog signal is lower than the temperature of the point, enabling an LED (Light Emitting Diode) lamp to shine and vice versa; then, amplification or attenuation gain adjustment is carried out on the collected temperature analog signals, multi-point parallel connection is adopted, and after passing through a comparator, the LED lamp at the point with the highest temperature can emit light; afterwards, signals output by a plurality of module acquisition differential amplifiers pass through an emitter follower and then are transmitted to a host output signal interface, the signals are transmitted to a main control chip through a shielding cable, and the actual highest point temperature is displayed in a digital mode. The intelligent temperature control system has remarkable benefits in the aspects of improving the temperature control accuracy, enhancing the system reliability, optimizing the heat dissipation design, realizing intelligent temperature control, prolonging the service life of equipment, improving the user experience and the like.

Various techniques to eliminate the error caused by variable β coupled with a series resistance in BJTs are described. Multiple known currents are applied to a terminal of the BJT and a corresponding VBE is generated. A resistor R is coupled in series with a base or emitter of the BJT and an analog-to-digital converter (ADC) is used to measure the voltage across the resistor R for each of the known currents. These voltages are used to determine ratios of β change, which are then used to determine a temperature of the BJT.

Disclosed is sensing calibration technology for permanently recording a calibration value of a measurement value when a temperature measurement circuit is manufactured. An environment emulating calibration circuit element configured to generate a calibration current emulating an environmental temperature is added to the temperature measurement circuit. The environment emulating calibration circuit element operates to change an output current of a temperature sensing circuit by the amount of change according to the environmental temperature according to a set state value input from an calibration device during factory calibration. During factory calibration, the external calibration device calculates a calibration value from output values measured while changing a set state of the environment emulating calibration circuit element and sets the calibration value in the temperature measurement circuit.