Substrate processing apparatus and method for maintenance of substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus and a method for maintaining a substrate processing apparatus, and more particularly, to a substrate processing apparatus for performing substrate processing using plasma and a method for maintaining a substrate processing apparatus. The present invention discloses a substrate processing apparatus, comprising: a process chamber (100) having an opening formed at the upper part thereof; a back plate (200) coupled to the opening and forming an introduction port (201) through which gas is introduced from the outside; a cover plate (300) which is provided on the upper side of the back plate (200) so as to cover the upper part of the back plate (200), and which forms a through-hole (301); and a support part (600) which is provided on the back plate (200), passes through the through-hole (301) of the cover plate (300), and supports an object to be supported by being spaced upward from the cover plate (300).

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a maintenance method thereof, and more particularly, to a substrate processing apparatus that performs substrate processing using plasma and a maintenance method thereof. Background Art

[0002] Generally, a substrate processing apparatus forms an appropriate temperature and pressure atmosphere required for a process in a process chamber that forms a processing space, supplies a process gas, and performs substrate processing.

[0003] Regarding such a substrate processing apparatus, according to an embodiment, a plasma source is provided on its upper side, and a cleaning gas is ionized and supplied to the processing space to perform cleaning of the processing space.

[0004] To this end, in an existing substrate processing apparatus, in a state where a plasma source is integrally provided on a cover plate that is independently separated from a back plate and provided above the back plate, the plasma source and the back plate are connected by a gas flow path tube, and the gas passing through the plasma source is transferred to the back plate side.

[0005] However, there are the following problems in this case: due to the temperature rise and the vacuum atmosphere in the processing space, deformation of the back plate occurs, especially, sagging of the central portion occurs, and stress is generated in the gas flow path tube connected to the central side of the back plate.

[0006] In particular, one end of the gas flow path tube connected to the central side of the back plate is deformed as the connection portion of the back plate sags, but the plasma source connected to the other end of the gas flow path tube is fixedly coupled to another cover plate that is separated from the back plate and is in an atmospheric pressure space, so there is a problem that stress is concentrated on the gas flow path tube and it is damaged.

[0007] Furthermore, since the gas flow path tube is made of a metal material and is joined by welding, and includes an insulating portion made of a ceramic material to insulate the back plate as an electrode from the plasma source in a grounded state, there is a problem that it is easily thermally deformed and has poor brittleness and is easily damaged by stress.

[0008] Moreover, recently, with the increase in the area of the apparatus due to the enlargement of the substrate, the size of the back plate has gradually become larger, and the sag amount on the central portion side and the resulting stress on the gas flow path tube will have a greater impact, so there is a problem that the damage of the gas flow path tube becomes frequent and serious. Summary of the Invention

[0009] Technical Problem to be Solved

[0010] An object of the present invention is to provide a substrate processing apparatus and a maintenance method thereof that improve durability in order to solve the above problems.

[0011] Means for Solving the Problem

[0012] The present invention is proposed to achieve the above-mentioned object. The present invention discloses a substrate processing apparatus, including: a process chamber 100 with an opening formed at the upper part; a back plate 200 coupled to the opening to form an inlet 201 for introducing gas from the outside; a cover plate 300 spaced apart from the upper side of the back plate 200 to cover the upper part of the back plate 200 and form a through-hole 301; a support part 600 disposed on the back plate 200, passing through the through-hole 301 of the cover plate 300, and separating and supporting the object to be supported upward from the cover plate 300.

[0013] The object to be supported is a plasma generation part 400 disposed on the upper side of the cover plate 300 and radicalizing the gas to supply it to the inlet 201.

[0014] The present invention further includes: a gas pipe part 500, one end of which is connected to the inlet 201 and the other end is connected to the plasma generation part 400 to convey the gas.

[0015] The back plate 200 is applied with an RF power supply.

[0016] The gas pipe part 500 includes: a first pipe part 510 disposed at the inlet 201; a second pipe part 520 disposed at the plasma generation part 400; a pipe insulation part 530 located between the first pipe part 510 and the second pipe part 520 to electrically insulate the first pipe part 510 and the second pipe part 520.

[0017] The object to be supported is disposed on the plane spaced apart from the center of the back plate 200 toward the edge side, and the support part 600 is combined with the back plate 200 at a position on the plane closer to the center of the back plate 200 than the object to be supported.

[0018] The support part 600 includes: a support bracket 610 for supporting the object to be supported; at least one support rod 620 vertically extending from the support bracket 610 and passing through the corresponding at least one through-hole 301; at least one support coupling part 630 horizontally expanding from the end of the support rod 620 and combined with the back plate 200.

[0019] The combination position of the outermost support coupling part 630 with respect to the center of the back plate 200 is closer to the center side of the back plate 200 on the plane than the center of the object to be supported.

[0020] The planar area of the support coupling part 630 is smaller than the through-hole 301.

[0021] The present invention further includes: an insulating part 1000, disposed between the support part 600 and the backplane 200, such that the support part 600 and the backplane 200 are electrically insulated from each other.

[0022] The support part 600 includes: a shielding part 640, which expands in the horizontal direction and overlaps with the through-hole 301 on a plane.

[0023] The present invention further includes: a shielding plate 700, disposed between the cover plate 300 and the backplane 200 to shield the backplane 200.

[0024] The present invention further includes: a support spacer 800, disposed between the backplane 200 and the shielding plate 700 to support the shielding plate 700.

[0025] The shielding plate 700 includes: a first shielding plate 710, which forms a shielding through-hole 711 for the support part 600 to pass through and is disposed parallel to the backplane 200; a second shielding plate 720, which is disposed on the first shielding plate 710 in close contact with the outer peripheral surface of the support part 600 to cover the shielding through-hole 711.

[0026] The second shielding plate 720 includes: a pair of second rolling door members 722, 724, which are respectively located on both sides with respect to the support part 600 and are disposed on the first shielding plate 710 so as to be able to move horizontally, so as to be adjacent to or separated from the support part 600.

[0027] On the opposite surfaces of the second rolling door members 722, 724 facing the support part 600, groove parts 721 corresponding to the outer peripheral surface of the support part 600 and fastening holes 723 for being coupled to the first shielding plate 710 are respectively formed.

[0028] The fastening holes 723 have lengths in a direction corresponding to the horizontal movement direction of the second rolling door members 722, 724 on a plane.

[0029] In the cover plate 300, a cooling flow path 302 through which a heat medium flows internally is formed according to a preset mode, so as to achieve cooling through heat exchange with the outside.

[0030] The cover plate 300 is supported by being in contact with the process chamber 100 in a grounded state.

[0031] The present invention further includes: a conductive band, which is located between the object to be supported and the cover plate 300 and electrically connects the object to be supported to the ground.

[0032] The present invention further includes: a coupling jig part 900, when separating the cover plate 300 from the process chamber 100, one end is coupled to the support part 600 or the supported object, and the other end is coupled to the cover plate 300 to connect the supported object and the cover plate 300.

[0033] The coupling jig part 900 is rotatably coupled to the support part 600 in a hinge manner. In order to perform maintenance, the cover plate 300, the support part 600, and the supported object are integrally separated, and are coupled to the cover plate 300 through a fastening member 60 based on hinge rotation.

[0034] Moreover, the present invention discloses a maintenance method for a substrate processing apparatus, including the following steps: a support part coupling release step (S200), releasing the coupling between the support part 600 and the back plate 200; a coupling jig part setting step (S300), connecting the supported object or the support part 600 and the cover plate 300 through the coupling jig part 900; a cover plate separation step (S400), integrally separating the cover plate 300, the supported object, and the support part 600 from the back plate 200.

[0035] Before the support part coupling release step (S200), it further includes: a gas supply part separation step (S100), separating the gas supply part 50 coupled to the inlet 201 from the back plate 200 in order to supply process gas to the processing space S1.

[0036] Effects of the Invention

[0037] The advantages of the substrate processing apparatus of the present invention are as follows. By connecting the plasma generation part to the back plate for support, it can cope with the deformation of the back plate caused by the vacuum and heat in the processing space inside the process chamber, move the plasma generation part and the support part integrally, block the generation of stress on the gas pipeline part and the pipeline insulation part provided between the plasma generation part and the back plate, and prevent breakage.

[0038] That is, the substrate processing apparatus of the present invention has the following advantages: it can cope with the deformation of the back plate, move the plasma generation part integrally, prevent the generation of stress acting on the gas pipeline part, prevent the breakage of the gas pipeline part and the pipeline insulation part, and improve durability.

[0039] Moreover, the advantages of the substrate processing apparatus of the present invention are as follows. The plasma generation part is arranged on the back plate, and the shielding performance is maintained through the shielding plate. During maintenance, the plasma generation part and the back plate can be easily separated.

[0040] Moreover, the maintenance method of the substrate processing apparatus of the present invention has the advantage that, in the process of separating the cover plate from the process chamber for maintenance, the cover plate is connected to the plasma generation unit through the fixing jig unit, so that the cover plate, the support unit, and the plasma generation unit are separated integrally, thus facilitating maintenance. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 is a cross-sectional view schematically showing the substrate processing apparatus of the present invention.

[0042] Figure 2 shows Figure 1 an enlarged cross-sectional view of another embodiment of the support unit in the substrate processing apparatus.

[0043] Figure 3a and Figure 3b are diagrams respectively showing Figure 1 the states of the through-hole in the substrate processing apparatus being opened and in the process of being opened based on the shielding plate.

[0044] Figure 4 shows Figure 1 the state of separating the gas supply unit for maintenance in the substrate processing apparatus.

[0045] Figure 5 shows Figure 4 the state of combining the fixing jig unit for maintenance in the substrate processing apparatus.

[0046] Figure 6 shows Figure 4 the state of separating the cover plate, the support unit, and the object to be supported integrally for maintenance in the substrate processing apparatus.

[0047] Figure 7 is a sequence diagram showing the maintenance method of the substrate processing apparatus of the present invention.

[0048] (Description of Reference Numerals)

[0049] 100: Process chamber 200: Back plate

[0050] 300: Cover plate 400: Plasma generation unit

[0051] 500: Gas pipe unit 600: Support unit DETAILED DESCRIPTION OF THE INVENTION

[0052] The substrate processing apparatus of the present invention will be described below with reference to the accompanying drawings.

[0053] The substrate processing apparatus of the present invention is as Figure 1As shown, it includes: a process chamber 100 with an opening formed at the upper part; a back plate 200 coupled to the opening to form a gas inlet 201 for introducing gas from the outside; a cover plate 300 spaced apart and disposed above the back plate 200 to cover the upper part of the back plate 200, forming a through hole 301; a support part 600 disposed on the back plate 200, passing through the through hole 301 of the cover plate 300, and spacing and supporting an object to be supported upward from the cover plate 300.

[0054] Moreover, the substrate processing apparatus of the present invention further includes: a gas pipe part 500, one end of which is connected to the gas inlet 201, and the other end of which is connected to the plasma generation part 400 to convey the gas.

[0055] Moreover, the substrate processing apparatus of the present invention further includes: a shielding plate 700 disposed between the cover plate 300 and the back plate 200 to shield the back plate 200.

[0056] Moreover, the substrate processing apparatus of the present invention further includes: a support gasket 800 disposed between the back plate 200 and the shielding plate 700 to support the shielding plate 700.

[0057] Moreover, the substrate processing apparatus of the present invention further includes: a conductive band located between the object to be supported and the cover plate 300 to ground-connect the object to be supported.

[0058] Moreover, the substrate processing apparatus of the present invention further includes: a coupling jig part 900, when separating the cover plate 300 from the process chamber 100, one end of which is coupled to the support part 600 or the object to be supported, and the other end of which is coupled to the cover plate 300 to connect the object to be supported and the cover plate 300.

[0059] Among them, the substrate 10 to be processed is a member for performing substrate processing such as deposition and etching, and any substrate with a quadrilateral planar shape such as a substrate for LCD manufacturing, a substrate for OLED manufacturing, or a substrate for solar cell manufacturing can be used.

[0060] Moreover, the substrate processing performed by the substrate processing apparatus of the present invention is a process of performing substrate processing such as deposition and etching by applying power in a closed processing space S1. As an example, any process including a PECVD process using plasma can be adopted.

[0061] The process chamber 100 is a member with an opening formed at the upper part, and various structures can be adopted.

[0062] For example, the process chamber 100 includes: a chamber body 110 with an open upper side, forming one or more doors 140; an upper guide 120 covering the upper opening of the chamber body 110 to form a closed processing space S1.

[0063] Among them, the chamber body 110 is a member that is open at the upper side and forms more than one door 140, and according to the combination structure with other modules such as the transfer module, the planar shape can adopt various shapes.

[0064] Moreover, the chamber body 110 has a plurality of members that form process conditions for the processing space S1. For example, an exhaust system for controlling pressure, etc.

[0065] The upper cover 120 is a member that covers the opening of the chamber body 110 to form a sealed processing space S1 isolated from the outside, and can adopt various structures.

[0066] Moreover, the process chamber 100 further includes: an insulating member 130, which is located between the backplane 200 and the upper cover 120 for electrical insulation between the backplane 200 to which an RF power supply is applied and the grounded process chamber 100.

[0067] Accordingly, the process chamber 100 supports the backplane 200 to which power is applied through the insulating member 130, and is electrically insulated from the backplane 200 while the chamber body 110 and the upper cover 120 remain in a grounded state.

[0068] Moreover, the process chamber 100 has another exhaust port 40 for exhausting the processing space S1, and accordingly, exhausts the processing space S1, thereby forming a vacuum pressure atmosphere to perform substrate processing.

[0069] The substrate processing apparatus of the present invention includes: a substrate support portion 20, which is disposed in the processing space S1 at a position opposite to the backplane 200 to support the substrate 10.

[0070] That is, the substrate support portion 20 is a member that is liftably disposed in the process chamber 100 to support the substrate 10.

[0071] For example, the substrate support portion 20 includes a support plate 21 that forms a substrate placement surface for placing the substrate 10 and a support shaft 22 that is connected to the lower part of the support plate 21. The support shaft 22 is connected to an external driving portion to move the support plate 21 up and down.

[0072] In addition, the substrate support portion 20 is grounded by being electrically connected to the process chamber 100 or being electrically connected to an external ground in a state of being disposed opposite to the backplane 200. Accordingly, a potential difference is generated between it and the backplane 200, and plasma is induced in the processing space S1.

[0073] The backplane 200 is a member that is coupled to the opening and forms an inlet 201 for introducing gas from the outside, and can adopt various structures.

[0074] Among them, the inlet port 201 is a component provided with a gas pipeline section 500 described later and introducing gas from the outside through the gas pipeline section 500, which is connected to a process gas supply line (not shown in the drawings) additional to the gas supply section 50 described later. Besides introducing a cleaning gas for cleaning the processing space S1, process gas can also be introduced.

[0075] Among them, the inlet port 201 is formed at the center of the back plate 200, and the back plate 200 is applied with an RF power supply and functions as an electrode for performing a process using plasma.

[0076] In addition, the substrate processing apparatus of the present invention further includes: a spray plate 30, which is disposed at a distance downward from the back plate 200 and forms a plurality of spray holes.

[0077] Among them, the spray plate 30 is parallel to the bottom surface of the back plate 200 and is spaced apart at a certain interval, and a diffusion space S2 is formed therebetween and the back plate 200. Accordingly, the diffusion of various gases such as process gas and cleaning gas introduced through the inlet port 201 is induced.

[0078] The cover plate 300 is a component that is disposed at a distance above the back plate 200 to cover the upper part of the back plate 200 and forms a through hole 301, and various structures can be adopted.

[0079] For example, the cover plate 300 is supported by contacting the process chamber 100 in a grounded state. More specifically, as Figure 1 shown, it is fastened to the upper guide member 120 through a fastening member to cover the upper side of the back plate 200, protecting the internal components, and various practical components can be provided thereon.

[0080] Among them, in the cover plate 300, a cooling flow path 302 through which a heat medium flows internally is formed according to a preset mode to achieve cooling through heat exchange with the outside. Accordingly, during the process of supplying high-temperature gas, cooling of various components such as the plasma generation section 400, the shielding plate 700, and the gas supply section 50 described later can also be performed.

[0081] And, a through hole 301 through which the support portion 600 described later passes is formed in the cover plate 300, blocking the upper surface of the back plate 200 from being exposed to the outside and guiding the connection between the object to be supported and the back plate 200.

[0082] In addition, as a vacuum pressure atmosphere or a high-temperature atmosphere is formed in the aforementioned processing space S1, with the edge of the back plate 200 being supported and fixed, the unsupported central side sags and deforms. When the object to be supported is fixedly arranged at a fixed position, the gas pipeline section 500 connected between the object to be supported and the back plate 200 may be damaged.

[0083] In order to improve this problem, the support object and the back plate 200 are combined through the support part 600 described later, so that the position of the support object deforms together with the deformation of the back plate 200, preventing breakage of the gas pipe part 500 and the surrounding components due to stress.

[0084] Among them, the support object described later can be any component as long as it is supported by the support part 600 and can be arranged on the upper side of the cover plate 300. Hereinafter, the plasma generation part 400 that supplies the radicalized gas to the inlet 201 on the upper side of the cover plate 300 will be described as an example.

[0085] The plasma generation part 400 can be arranged at intervals from the center of the back plate 200 on the plane to the edge side, and at least one can be arranged. If necessary, multiple can be arranged.

[0086] In addition, the plasma generation part 400 is a component that radicalizes the cleaning gas for cleaning the processing space S1 and supplies it. It is supported by the support part 600 described later, moves together with the deformation of the back plate 200, and is connected to the inlet 201 through the gas pipe part 500.

[0087] The gas pipe part 500 is a component that connects one end to the inlet 201 and the other end to the plasma generation part 400 to transfer gas, and various structures can be adopted.

[0088] For example, as shown in Figure 2 , the gas pipe part 500 includes: a first pipe part 510 arranged at the inlet 201; a second pipe part 520 arranged at the plasma generation part 400; and a pipe insulation part 530 located between the first pipe part 510 and the second pipe part 520 to electrically insulate the first pipe part 510 and the second pipe part 520.

[0089] That is, the gas pipe part 500 is combined with the plasma generation part 400 to connect the inlet 201, and further connects the processing space S1 and the plasma generation part 400 to transfer the ionized cleaning gas. It also performs electrical insulation between the back plate 200 to which power is applied and the plasma generation part 400 and the support part 600 in the grounded state through the pipe insulation part 530.

[0090] In addition, the gas pipe part 500 is not only a component of the gas supply part 50 described later, but also can transfer the cleaning gas transferred from the plasma generation part 400 and connect to the process gas supply line to transfer the process gas.

[0091] Among them, regarding the gas pipeline part 500, the aforementioned first pipeline part 510 and second pipeline part 520 are made of metal, more specifically, made of aluminum, and are relatively fragile due to thermal deformation. The pipeline insulation part 530, which is the connection point to the plasma generation part 400, is made of ceramic to achieve electrical insulation. Therefore, it has poor brittleness and is easily damaged due to stress. Through the support part 600 described later, the position deformation of the plasma generation part 400 sagging based on the backplane 200 is prevented from being damaged.

[0092] The support part 600 is a member that is provided on the backplane 200 and penetrates through the through-hole 301 of the cover plate 300 to support the object to be supported upward from the cover plate 300, and various structures can be adopted.

[0093] That is, the support part 600, as Figure 2 shown, penetrates through the through-hole 301 formed in the cover plate 300, so that the plasma generation part 400 is independent of the cover plate 300, that is, supported upward and separated, and is combined with the backplane 200 to connect the plasma generation part 400 and the backplane 200.

[0094] Among them, the support part 600 is closer to the center position of the backplane 200 than the position of the object to be supported on the backplane 200 in the plane and is combined with the backplane 200.

[0095] That is, considering that the backplane 200 sags more severely closer to the center side, the support part 600 is combined with the backplane 200 at a position adjacent to the center of the backplane 200 to guide the plasma generation part 400 to move corresponding to the deformation amount of the backplane 200.

[0096] Accordingly, the support part 600 makes the sag at the center of the backplane 200 connected to the gas pipeline part 500 and the deformation amount between the combination positions of the plasma generation part 400 connected to the gas pipeline part 500 similar based on the gas pipeline part 500, thereby preventing the gas pipeline part 500 from being damaged.

[0097] For this purpose, the support part 600 is arranged such that the combination position of the outermost support combination part 630 with the backplane 200 based on the center of the backplane 200 is closer to the center side of the backplane 200 than the center of the object to be supported on the plane.

[0098] In particular, when there are multiple support combination parts 630, among the multiple combination positions with the backplane 200, the combination position located on the outermost contour from the center of the backplane 200 is also closer to the center side of the backplane 200 than the center of the plasma generation part 400 on the plane.

[0099] As an example, the support portion 600 includes: a support bracket 610 for supporting a supported object; at least one support rod 620 vertically extending from the support bracket 610 and passing through the corresponding at least one through-hole 301; and at least one support coupling portion 630 horizontally expanding from the end of the support rod 620 and coupled to the back plate 200.

[0100] That is, the support portion 600 supports the supported object, i.e., the plasma generation portion 400, through the support bracket 610 horizontally extending at the upper end of the support rod 620 passing through the through-hole 301, and is coupled to the back plate 200 through the support coupling portion 630 horizontally extending at the lower end.

[0101] The support rod 620 and the support coupling portion 630 may have multiple ones relative to a single support bracket 610 as Figure 2 shown.

[0102] Moreover, the planar area of the support coupling portion 630 is smaller than that of the through-hole 301, and the support portion 600 is provided through the cover plate 300.

[0103] In addition, the support coupling portion 630 is directly fastened to the back plate 200 through another fastening member, or as another example, as Figure 2 shown, in a state of being provided in contact with the insulation portion 1000 described later, it is coupled through the insulation portion 1000 and the fastening member.

[0104] Among them, the insulation portion 1000 is a member provided between the support portion 600 and the back plate 200 to electrically insulate the support portion 600 and the back plate 200.

[0105] That is, for electrical insulation between the back plate 200 to which power is applied and the support portion 600 and the plasma generation portion 400 in a grounded state, the insulation portion 1000 is provided between the back plate 200 and the support coupling portion 630, whereby electrical insulation is achieved between the back plate 200 and the support portion 600.

[0106] In addition, in this case, during the maintenance described later, the insulation portion 1000 is provided on the upper surface of the back plate 200 in a state where the coupling with the support coupling portion 630 is released to maintain the coupling with the back plate 200.

[0107] Moreover, the support portion 600 further includes: a shielding portion 640 horizontally expanding and overlapping the through-hole 301 on a plane.

[0108] The shielding part 640 is formed by extending horizontally from the support rod 620 to block the electromagnetic field generated by the back plate 200 to which power is applied from affecting the plasma generating part 400 and the supporting part 600 through the through hole 301 , and overlaps at least a part of the through hole 301 in a plane.

[0109] Wherein, the shielding portion 640 is as follows Figure 2 As shown, it is located on the support rod 620 adjacent to the lower portion of the second shielding plate 720 described later, and therefore has the advantage of effectively blocking the electromagnetic field entering through the through hole 301 .

[0110] Furthermore, the shielding portion 640 is disposed at the lower portion of the second shielding plate 720. As the back plate 200 droops, the support portion 600 and the plasma generating portion 400 move downward to prevent interference with the second shielding plate 720. Since it is disposed at a position adjacent to the lower portion of the second shielding plate 720, even if it is linked to the drooping of the back plate 200 and partially droops downward, it can block the radiation of the electromagnetic field entering through the through-hole 301.

[0111] Furthermore, a plurality of shielding portions 640 may be provided along the length direction of the support rod 620 .

[0112] The shielding plate 700 is as follows Figure 2 As shown, it is a component that is disposed between the cover plate 300 and the back plate 200 to shield the back plate 200, and a variety of structures can be adopted.

[0113] That is, the shielding plate 700 , like the aforementioned shielding portion 640 , is a component disposed between the cover plate 300 and the back plate 200 to shield the back plate 200 in order to block the influence of the electromagnetic field radiated from the back plate 200 to which power is applied on the cover plate 300 and various practical tools on the upper side of the cover plate 300 .

[0114] To this end, the shielding plate 700 is as follows Figure 3a and Figure 3b As shown, it includes: a first shielding plate 710, which forms a shielding through-hole 711 for the support part 600 to pass through and is parallel to the back plate 200; a second shielding plate 720, which is close to the outer peripheral surface of the support part 600 and is arranged on the first shielding plate 710 to cover the shielding through-hole 711.

[0115] The first shielding plate 710 is a plate member parallel to the cover plate 300 , and may be a member that forms a shielding through-hole 711 for the support rod 620 to pass through at a position corresponding to the through-hole 301 to shield the back plate 200 .

[0116] Even with this first shielding plate 710, the electromagnetic field can radiate upward through the support rod 620 and the shielding through-hole 711. Therefore, a second shielding plate 720 is further included, which is disposed in close contact with the outer peripheral surface of the support rod 620 to cover the shielding through-hole 711.

[0117] Among them, as shown in Figure 3a the second shielding plate 720 includes a pair of second rolling door members 722, 724, which are respectively located on both sides with respect to the support portion 600, and are disposed on the first shielding plate 710 so as to be able to move horizontally, and are adjacent to or separated from the support portion 600.

[0118] Among them, with respect to the pair of second rolling door members 722, 724, on the opposite surfaces facing the support portion 600, groove portions 721 are formed corresponding to the outer peripheral surface of the support portion 600, and are in close contact with the support rod 620 to cover the shielding through-hole 711.

[0119] Moreover, the pair of second rolling door members 722, 724 can be adjacent to each other in order to release the engagement of the support coupling portion 630 for maintenance or as needed later, and can slide in the horizontal direction to open at least a part of the shielding through-hole 711.

[0120] For this purpose, as shown in Figure 3a the second rolling door members 722, 724 are, in the normal case, fixed to the ends of fastening holes 723 formed in an elongated hole shape in order to have a length in the direction corresponding to the horizontal movement direction.

[0121] Moreover, the second rolling door members 722, 724, according to maintenance and other needs, as shown in Figure 3b release the complete engagement of the fastening members and slide along the length direction of the fastening holes 723 to guide at least a part of the shielding through-hole 711 to be exposed on the plane.

[0122] Among them, the fastening holes 723 are in an elliptical shape, and the major axis corresponds to the moving direction of the second rolling door members 722, 724.

[0123] In addition, as shown in Figure 1 the shielding plate 700 is coupled to the cover plate 300 through another fastening shaft or a gasket coupled therebetween. When the cover plate 300 is separated for maintenance later, it moves simultaneously as a whole with the cover plate 300, the support portion 600, and the plasma generation portion 400.

[0124] The support gasket 800 is a member disposed between the back plate 200 and the shielding plate 700 to support the shielding plate 700, and can adopt various structures.

[0125] As an example, a plurality of the support spacers 800 are fixedly coupled to the bottom surface of the shielding plate 700, are disposed on the back plate 200, and support the shielding plate 700. More specifically, they can support the bottom surface of the first shielding plate 710. Among them, the support spacers 800 are made of an electrically insulating material.

[0126] And, as another example, a plurality of the support spacers 800 are fixedly coupled to the back plate 200 and can also support the bottom surface of the first shielding plate 710.

[0127] In addition, in order to support the electrical connection between the object to be supported, i.e., the plasma generation unit 400 and the cover plate 300, a conductive band that ground-connects the plasma generation unit 400 and the cover plate 300 and forms a grounding path may also be provided.

[0128] The coupling fixture portion 900 is a member that, when separating the cover plate 300 from the process chamber 100, is coupled to the support portion 600 or the object to be supported at one end and is coupled to the cover plate 300 at the other end to connect the object to be supported and the cover plate 300, and can adopt various structures.

[0129] As an example, the coupling fixture portion 900 is a detachable additional component, is not provided in a normal state, and is only provided to connect the support portion 600 or the plasma generation unit 400 and the cover plate 300 when it is necessary to separate the cover plate 300 and the plasma generation unit 400, such as during maintenance, so as to integrally separate the plasma generation unit 400, the cover plate 300, and the shielding plate 700 from the back plate 200 and the process chamber 100.

[0130] And, as another example, as shown in Figures 4 to 6 the coupling fixture portion 900 can be hinge-rotatably coupled to the support portion 600, and for maintenance, it can be integrally separated from the cover plate 300, the support portion 600, and the object to be supported by hinge rotation, and can also be coupled to the cover plate 300 through a fastening member 60.

[0131] That is, in a normal state, the coupling fixture portion 900 is hinge-coupled to the support portion 600 or the plasma generation unit 400 to block the connection between the support portion 600 and the cover plate 300, and is stored in a folded state in a hinge rotation state or a coupled state. During maintenance, it is hinge-rotated or unfolded and is coupled to the cover plate 300 through a fastening member 60 to integrally connect the cover plate 300 and the plasma generation unit 400.

[0132] That is, for the maintenance of the components of the gas injection portion including the internal processing space S1 or the back plate 200 of the substrate processing apparatus of the present invention, it is necessary to separate the upper components. However, considering the installation height and operation efficiency of the process chamber 100, it is necessary to integrally separate the object to be supported, i.e., the plasma generation unit 400, the cover plate 300, and the shielding plate 700.

[0133] For this, a maintenance method of the substrate processing apparatus of the present invention will be described in detail below with reference to the accompanying drawings.

[0134] The maintenance method of the substrate processing apparatus of the present invention is as Figure 7 shown, and includes the following steps: a support part coupling release step (S200) of releasing the coupling between the support part 600 and the back plate 200; a coupling jig part setting step (S300) of connecting the object to be supported or the support part 600 and the cover plate 300 through the coupling jig part 900; a cover plate separation step (S400) of integrally separating the cover plate 300, the object to be supported, and the support part 600 from the back plate 200.

[0135] Moreover, before the support part coupling release step (S200) of the maintenance method of the substrate processing apparatus of the present invention, it further includes: a gas supply part separation step (S100) of separating the gas supply part 50 coupled to the inlet 201 from the back plate 200 in order to supply process gas to the processing space S1.

[0136] The gas supply part separation step (S100) is a step of separating the gas supply part 50 coupled to the inlet 201 for supplying process gas to the processing space S1 from the back plate 200 before the support part coupling release step (S200).

[0137] That is, the gas supply part separation step (S100) is a step of separating the gas supply part 50 including the gas pipe part 500 provided on the upper side of the cover plate 300 to release the coupling between the plasma generation part 400 and the gas pipe part 500.

[0138] Accordingly, in the gas supply part separation step (S100), the inlet 201 can be exposed on the upper side to ensure various operation spaces required for separating the cover plate 300 described later.

[0139] The support part coupling release step (S200) is as Figure 4 shown, and can be a step of releasing the coupling between the support part 600 and the back plate 200.

[0140] More specifically, the support part coupling release step (S200) is a step of releasing the fastening member between the support coupling part 630 and the insulating part 1000 to release the connection between the plasma generation part 400 and the support part 600 and the back plate 200.

[0141] Therefore, in the support unit coupling release step (S200), the second rolling door members 722 and 724 are horizontally moved in a direction away from the support rod 620 to open the shielding through-hole 711, and the fastening member fastened to the support coupling part 630 through the through-hole 301 and the shielding through-hole 711 is released, thereby releasing the coupling of the support unit 600.

[0142] The coupling jig unit setting step (S300) is as Figure 5 shown, and it is a step of connecting between the object to be supported or the support unit 600 and the cover plate 300 through the coupling jig unit 900 after the support unit coupling release step (S200).

[0143] For example, in the coupling jig unit setting step 300, if it is a detachable coupling jig unit 900, one end of the separately stored coupling jig unit 900 is coupled to the plasma generation unit 400 or the support unit 600 and the other end is coupled to the cover plate 300 to integrally connect the cover plate 300 and the plasma generation unit 400.

[0144] And, as another example, in the coupling jig unit setting step (S300), if it is a hinge-rotatable or foldable coupling jig unit 900, the coupling jig unit 900 is coupled to the cover plate 300 by hinge rotation or unfolding to integrally connect the cover plate 300 and the plasma generation unit 400.

[0145] The cover plate separation step (S400) is as Figure 6 shown, and it is a step of integrally separating the cover plate 300, the object to be supported, i.e., the plasma generation unit 400, and the support unit 600 from the back plate 200 in a state where the cover plate 300 and the plasma generation unit 400 are integrally connected.

[0146] That is, in the cover plate separation step (S400), in a state where the cover plate 300 and the plasma generation unit 400 are integrally connected through the coupling jig unit 900, the cover plate 300 is evenly lifted upward in a plane to integrally separate the cover plate 300, the plasma generation unit 400, and the support unit 600 from the back plate 200.

[0147] In addition, in this case, as described above, in the cover plate separation step (S400), the cover plate 300 and the shielding plate 700, more specifically, the first shielding plate 710 and the cover plate 300 are integrally coupled through a fastening shaft or a gasket therebetween, and the shielding plate 700 can be integrally separated.

[0148] Accordingly, in the cover plate separation step (S400), the cover plate 300, the support unit 600, the plasma generation unit 400, and the shielding plate 700 can be integrally separated from the back plate 200 and the process chamber 100.

[0149] After the cover plate separation step (S400), a maintenance step (S500) may be performed to perform maintenance on the processing space S1 or various components including the back plate 200 in a state where the back plate 200 is exposed on the upper side.

[0150] The above is only an illustration of a part of the preferred embodiments that the present invention can implement. As is well known, the scope of the present invention should not be limited to the above embodiments, and the technical idea of the present invention described above and its fundamental technical idea are all included within the scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, comprising: a process chamber (100) having an opening formed at an upper portion thereof; a back plate (200) coupled to the opening to form an inlet (201) for introducing gas from the outside; a cover plate (300) spaced apart from an upper side of the back plate (200) to cover an upper portion of the back plate (200) and forming a through hole (301); a support portion (600) disposed on the back plate (200), passing through the through hole (301) of the cover plate (300), and spacing and supporting an object to be supported upward from the cover plate (300).

2. The substrate processing apparatus according to claim 1, characterized in that, the object to be supported is a plasma generating unit (400) disposed on an upper side of the cover plate (300) and radicalizing the gas to supply the gas to the inlet (201).

3. The substrate processing apparatus according to claim 2, characterized in that, further comprising: a gas pipe portion (500) having one end connected to the inlet (201) and the other end connected to the plasma generating unit (400) to transfer the gas.

4. The substrate processing apparatus according to claim 1, characterized in that, the back plate (200) is applied with an RF power source.

5. The substrate processing apparatus according to claim 3, characterized in that, the gas pipe portion (500) includes: a first pipe portion (510) disposed at the inlet (201); a second pipe portion (520) disposed at the plasma generating unit (400); and a pipe insulating portion (530) located between the first pipe portion (510) and the second pipe portion (520) to electrically insulate the first pipe portion (510) and the second pipe portion (520).

6. The substrate processing apparatus according to claim 1, characterized in that, the object to be supported is disposed spaced apart from a center of the back plate (200) toward an edge side on a plane, and the support portion (600) is coupled to the back plate (200) at a position closer to the center of the back plate (200) than the object to be supported on the plane.

7. The substrate processing apparatus according to claim 1, characterized in that, the support portion (600) includes: a support bracket (610) for supporting the object to be supported; at least one support rod (620) vertically extending from the support bracket (610) and passing through the corresponding at least one through hole (301); and at least one support coupling portion (630) horizontally expanding from an end of the support rod (620) and coupled to the back plate (200).

8. The substrate processing apparatus according to claim 7, characterized in that, a coupling position of the outermost support coupling portion (630) with respect to the center of the back plate (200) is closer to the center side of the back plate (200) than the center of the object to be supported on the plane.

9. The substrate processing apparatus according to claim 7, characterized in that, a planar area of the support coupling portion (630) is smaller than the through hole (301).

10. The substrate processing apparatus according to claim 1, characterized in that, further comprising: an insulating portion (1000) disposed between the support portion (600) and the back plate (200) to electrically insulate the support portion (600) and the back plate (200).

11. The substrate processing apparatus according to claim 7, characterized in that, the support portion (600) includes: a shielding portion (640) formed to expand in the horizontal direction and overlapping the through-hole (301) on a plane.

12. The substrate processing apparatus according to claim 4, characterized in that, further comprising: a shielding plate (700) disposed between the cover plate (300) and the back plate (200) to shield the back plate (200).

13. The substrate processing apparatus according to claim 12, characterized in that, further comprising: a support spacer (800) disposed between the back plate (200) and the shielding plate (700) to support the shielding plate (700).

14. The substrate processing apparatus according to claim 12, characterized in that, the shielding plate (700) includes: a first shielding plate (710) formed with a shielding through-hole (711) for the support portion (600) to pass through and disposed parallel to the back plate (200); a second shielding plate (720) disposed on the first shielding plate (710) in close contact with the outer peripheral surface of the support portion (600) to cover the shielding through-hole (711).

15. The substrate processing apparatus according to claim 14, characterized in that, the second shielding plate (720) includes: a pair of second rolling door members (722, 724) respectively located on both sides with the support portion (600) as a reference and movably disposed horizontally on the first shielding plate (710) to be adjacent to or separated from the support portion (600).

16. The substrate processing apparatus according to claim 15, characterized in that, the second rolling door members (722, 724) respectively form a groove portion (721) corresponding to the outer peripheral surface of the support portion (600) and a fastening hole (723) coupled to the first shielding plate (710) on the opposite surface facing the support portion (600).

17. The substrate processing apparatus according to claim 16, characterized in that, the fastening hole (723) has a length in a direction corresponding to the horizontal movement direction of the second rolling door members (722, 724) on a plane.

18. The substrate processing apparatus according to claim 1, characterized in that, in the cover plate (300), a cooling flow path (302) through which a heat medium flows internally is formed in a preset pattern to achieve cooling through heat exchange with the outside.

19. The substrate processing apparatus according to claim 1, characterized in that, the cover plate (300) is supported by contacting the process chamber (100) in a grounded state.

20. The substrate processing apparatus according to claim 19, characterized in that, The present invention further includes: a conductive band, which is located between the supported object and the cover plate (300) to ground-connect the supported object.

21. The substrate processing apparatus according to claim 1, wherein, it further includes: a coupling jig part (900), when separating the cover plate (300) from the process chamber (100), one end is coupled to the support part (600) or the supported object, and the other end is coupled to the cover plate (300) to connect the supported object and the cover plate (300).

22. The substrate processing apparatus according to claim 21, wherein, the coupling jig part (900) is rotatably coupled to the support part (600) in a hinge manner, and in order to perform maintenance, the cover plate (300), the support part (600) and the supported object are integrally separated, and are coupled to the cover plate (300) through a fastening member (60) based on hinge rotation.

23. A maintenance method for a substrate processing apparatus, wherein, the apparatus includes: a process chamber (100) with an opening formed in the upper part; a back plate (200), which is coupled to the opening to form an inlet (201) for introducing gas from the outside; a cover plate (300), which is spaced above the back plate (200) to cover the upper part of the back plate (200) and forms a through-hole (301); a support part (600), which is provided on the back plate (200), penetrates the through-hole (301) of the cover plate (300), and separates and supports the supported object upward from the cover plate (300), the maintenance method includes the following steps: a support part coupling release step (S200), releasing the coupling between the support part (600) and the back plate (200); a coupling jig part setting step (S300), connecting between the supported object or the support part (600) and the cover plate (300) through the coupling jig part (900); a cover plate separation step (S400), integrally separating the cover plate (300), the supported object and the support part (600) from the back plate (200).

24. The maintenance method for a substrate processing apparatus according to claim 23, wherein, before the support part coupling release step (S200), it further includes: a gas supply part separation step (S100), separating the gas supply part (50) coupled to the inlet (201) from the back plate (200) in order to supply process gas to the processing space (S1).

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