Gas supply module and substrate processing apparatus including same

Abstract

The present invention relates to a gas supply module for performing substrate processing by vaporizing a supply gas and a substrate processing apparatus including the same, the substrate processing apparatus comprising: a process chamber in which a processing space is formed and an introduction port for introducing a process gas is formed; and a gas supply module that is provided in the introduction port and supplies the process gas to the processing space by gasification using ultrasonic waves, the gas supply module including: an atomization unit that receives a processing liquid from the outside, atomizes the processing liquid using ultrasonic waves, and sprays the atomized processing liquid; and a main body part which is provided between the atomization part and the process chamber, in which a gasification space communicating with the processing space is formed, and which gasifies the fluid conveyed by the atomization part into the process gas and supplies the process gas to the processing space by forming a low-pressure environment in the gasification space.

Description

Technical Field

[0001] The present invention relates to a gas supply module and a substrate processing apparatus including the same, and more particularly, to a gas supply module that performs substrate processing by gasifying and supplying a gas and a substrate processing apparatus including the same. Background Art

[0002] Generally, a vaporizer is a component that receives a raw material in a liquid state to gasify the raw material and supply it in a gaseous state to a process chamber for performing substrate processing, and gasifies the raw material in a liquid state by heating with a heater.

[0003] More specifically, an existing vaporizer includes a pipe for transporting a raw material in a liquid state, a preheating unit, a vaporizing unit, and a flow rate adjusting unit connected between the pipes. The raw material supplied through the pipe is heated by the preheating unit and transferred to the vaporizing unit, and the preheated raw material is gasified by heating the vaporizing unit, and the gas is supplied through the flow rate adjusting unit and the pipe.

[0004] In this case, the existing vaporizer has a complex structure, is difficult to maintain, the device becomes larger, and the space utilization rate is reduced. It is necessary to continuously supply heat energy to the entire device including the pipe. Due to the enlarged device, there are problems of reduced energy efficiency and increased costs.

[0005] In particular, the existing vaporizer is a component that gasifies a liquid by heating with a heater, so it is very sensitive to temperature. When the local temperature drops, condensation occurs, resulting in a decrease in vaporization performance.

[0006] In addition, the existing vaporizer is based on a liquid gasification method by heating. In terms of the device structure, there are limitations in the gas flow rate supplied by gasification, and it is impossible to achieve a large flow rate of gas supply for large-area substrate processing. Summary of the Invention

[0007] Technical Problem to be Solved

[0008] An object of the present invention is to provide a gas supply module that supplies a large flow rate of gas by gasification and a substrate processing apparatus including the same in order to solve the above problems.

[0009] Means for Solving the Problem

[0010] The present invention is proposed to achieve the object of the present invention, and discloses a gas supply module including: an atomizing unit 100 that receives a processing liquid from the outside, atomizes it using ultrasonic waves, and ejects it; a main body unit 200 that is combined with the atomizing unit 100, forms a vaporization space S2 inside, and gasifies the atomized fluid transferred by the atomizing unit 100 by forming a low-pressure environment in the vaporization space S2.

[0011] The present invention further includes: a heater unit 300, disposed on at least a part of the outer peripheral surface of the main body unit 200, for heating the vaporization space S2.

[0012] The atomization unit 100 includes: a main body unit 110, forming an internal space for receiving the processing liquid from the outside; an ultrasonic vibration unit 120, in the internal space, atomizing the processing liquid by vibration; a nozzle unit 130, located at the end of the main body unit 110, for ejecting the atomized fluid to the side of the main body unit 200.

[0013] The present invention further includes: a controller 40, controlling the vibration frequency and amplitude of the ultrasonic vibration unit 120 according to the pressure in the vaporization space S2 and the supply flow rate of the fluid ejected into the vaporization space S2.

[0014] The main body unit 200 includes: a main body body 210, one end of which is coupled to the atomization unit 100, and the other end of which is coupled to the introduction port 12 from the outside of the process chamber 10; a baffle 220, disposed inside the main body body 210, forming a plurality of through holes.

[0015] The main body body 210 includes: an upper main body body 211, located above the baffle 220, forming an upper vaporization space S21 inside; a lower main body body 212, located below the baffle 220, forming a lower vaporization space S22 inside.

[0016] The main body unit 200 further includes: an inclined portion 230, located on at least a part of the inner surface of the main body body 210, and the inner diameter gradually or stepwise decreases towards the lower side.

[0017] The inclined portion 230 is formed at a position on the inner surface of the main body body 210 adjacent to the process chamber 10, and the inner diameter of the lowermost end is the same as the inner diameter of the introduction port 12.

[0018] The main body unit 200 reduces the pressure in the vaporization space S2 to a vaporization pressure lower than the preset normal pressure to vaporize the fluid.

[0019] The vaporization pressure is less than 10 Torr.

[0020] Moreover, the present invention discloses a substrate processing apparatus, including: a process chamber 10, forming a processing space S1 inside, and forming an introduction port 12 for introducing a process gas; a gas supply module 20, disposed at the introduction port 12, for supplying the process gas to the processing space S1 by ultrasonic vaporization.

[0021] The present invention further includes: a gas diffusion part 30, which is arranged at the inlet 12 in the processing space S1 to diffuse the process gas transmitted through the inlet 12.

[0022] The gas diffusion part 30 forms a diffusion space S3 inside, and includes a plurality of side through-holes 32 formed on the side and a plurality of bottom through-holes 31 formed on the bottom.

[0023] The gas diffusion part 30 can have any one of a circular, elliptical, and polygonal shape on a plane.

[0024] In the main body part 200, the vaporization space S2 is communicated with the processing space S1, and the pressure of the vaporization space S2 is linked due to the pressure of the processing space S1.

[0025] The pressure of the processing space S1 can be maintained lower than the pressure of the vaporization space S2.

[0026] The present invention further includes: a connection pipe part 70, which is connected between an external storage tank 50 storing the processing liquid and the atomization part 100 to transmit the processing liquid.

[0027] The connection pipe part 70 includes: a connection pipe 71, which is connected between the storage tank 50 and the atomization part 100; a liquid control valve 72, which is arranged on the connection pipe 71 to control the supply flow rate of the processing liquid, and by blocking the connection pipe 71, makes the connection pipe 71 on the atomization part 100 side maintain a vacuum state and makes the connection pipe 71 on the storage tank 50 side maintain an atmospheric pressure state.

[0028] Effects of the Invention

[0029] The advantages of the gas supply module of the present invention and the substrate processing apparatus including the same are that the process gas is supplied by vaporizing the fluid atomized under ultrasonic and pressure conditions. Therefore, the structure of the gas supply module is simple and easy to maintain, and the cost can be reduced compared with the heating-based vaporization method.

[0030] The advantages of the gas supply module of the present invention and the substrate processing apparatus including the same are that the processing liquid is atomized and sprayed to be vaporized to supply the processing gas, and a large flow rate of process gas can be supplied, and sufficient process gas can be supplied for the processing of a large-area substrate.

[0031] Moreover, the advantages of the gas supply module of the present invention and the substrate processing apparatus including the same are that the pressure control in an additional gas supply module is omitted, and the processing liquid is vaporized by being linked with the pressure of the process chamber. Therefore, no additional components are required, and vaporization can be achieved only by being installed in the existing process chamber.

[0032] Moreover, the gas supply module of the present invention and the substrate processing apparatus including the same have the advantages that by heating the vaporization space in the main body portion, re-condensation after vaporization is prevented, and the process gas is uniformly diffused and injected into the process chamber through the gas diffusion portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 FIG. is a schematic view showing a schematic state of the substrate processing apparatus of the present invention.

[0034] Figure 2 FIG. shows Figure 1 an exploded perspective view of the state of the gas supply module in the substrate processing apparatus.

[0035] Figure 3 FIG. shows Figure 1 an embodiment of the diffusion portion in the substrate processing apparatus.

[0036] Figure 4 FIG. shows Figure 1 another embodiment of the diffusion portion in the substrate processing apparatus.

[0037] Figure 5 FIG. is a graph (F1) showing the gas supply flow rate of the gas supply module based on the existing substrate processing apparatus and a graph (F2) showing the gas supply flow rate of the gas supply module based on the substrate processing apparatus of the present invention.

[0038] (Description of Reference Numerals)

[0039] 10: Process chamber 20: Gas supply module

[0040] 30: Gas diffusion portion 100: Atomization portion

[0041] 200: Main body portion 300: Heater portion DETAILED DESCRIPTION

[0042] Hereinafter, the gas supply module of the present invention and the substrate processing apparatus including the same will be described in detail with reference to the drawings.

[0043] The substrate processing apparatus of the present invention, as Figure 1 shown, includes: a process chamber 10, in which a processing space S1 is formed, and an inlet 12 for introducing a process gas is formed; a gas supply module 20, disposed at the inlet 12, and supplying the process gas to the processing space S1 by vaporization using ultrasonic waves.

[0044] Moreover, the substrate processing apparatus of the present invention further includes: a gas diffusion portion 30, disposed in the processing space S1 at the inlet 12, and diffusing the process gas transmitted through the inlet 12.

[0045] In addition, the substrate processing apparatus of the present invention includes a connection pipe portion 70 that connects an external storage tank 50 storing a processing liquid to an atomizing portion 100 and conveys the processing liquid.

[0046] The substrate, which is the object to be processed, is a member that performs substrate processing such as etching and deposition, and any substrate such as a substrate for semiconductor manufacturing, a substrate for LCD manufacturing, a substrate for OLED manufacturing, a substrate for solar cell manufacturing, and a transparent glass substrate can be used.

[0047] The process chamber 10 is a member that forms a processing space S1 inside and forms an inlet 12 for introducing a process gas, and can adopt various structures.

[0048] As an example, the process chamber 10 is a single member integrally formed by an upper surface, a lower surface, and side surfaces, and is a member having an inlet 12 formed on the upper surface and provided with a gas supply module 20.

[0049] Moreover, as another example, the process chamber 10 includes a chamber body with an upper opening and an upper inlet detachably coupled to the opening of the chamber body. The upper inlet has an inlet 12 formed thereon and is provided with a gas supply module 20.

[0050] The chamber body is a member provided with a substrate support portion and the like, and can adopt various structures. One or more doors are formed on the inner side wall of the processing space S1 for introducing and discharging the substrate.

[0051] The upper inlet is a member that covers the opening of the chamber body and forms a sealed processing space S1 together with the chamber body, and can adopt any structure.

[0052] For example, the upper inlet can adopt various structures such as a frame shape having an opening at the center portion, so that the gas supply module 20 can be provided.

[0053] The substrate support portion is a member provided on the lower side of the processing space S1 in the process chamber 10 to support the substrate, and can adopt various structures.

[0054] For example, the substrate support portion 20 includes a substrate placement portion for placing the substrate and a support shaft provided on the lower side of the substrate placement portion to move the substrate placement portion up and down.

[0055] In order to introduce and remove the substrate through the door, the substrate support portion is movably provided up and down. Furthermore, in order to control the temperature such as heating or cooling the substrate, temperature control components such as a heater can also be provided.

[0056] In addition, an exhaust port 11 connected to an external pump 60 is provided on the bottom surface of the process chamber 10, so as to exhaust the processing space S1 and adjust the pressure of the processing space S1.

[0057] Among them, the process chamber 10 evacuates the processing space S1 through an external pump 60. In particular, the processing space S1 is made to form a vacuum state to form a process atmosphere. Furthermore, the vaporization space S2 of the gas supply module 20 described later is made to form a low pressure below atmospheric pressure, especially a vacuum pressure, so as to guide vaporization.

[0058] That is, in a state where the processing space S1 in the process chamber 10 and the vaporization space S2 in the main body 200 of the gas supply module 20 communicate with each other, through the exhaust port 11 connected to the external pump 60, the processing space S1 is made to form a vacuum state, and the vaporization space S2 is decompressed to guide it to form a vacuum state. Accordingly, in the vaporization space S2, the fluid ejected by being atomized by the atomization unit 100 is vaporized. A detailed description thereof will be given later.

[0059] The gas diffusion unit 30 is a member provided at the introduction port 12 in the processing space S1 to diffuse the process gas transmitted through the introduction port 12, and various structures can be adopted.

[0060] As an example, the gas diffusion unit 30 is a plate having a plurality of through jet holes, and is disposed in the processing space S1 so as to overlap the introduction port 12 on a plane.

[0061] And, as another example, the gas diffusion unit 30 is a member provided on the ceiling surface of the process chamber 10 with the introduction port 12 inside to form a diffusion space S3, and may have side surfaces and a bottom surface.

[0062] Among them, the gas diffusion unit 30 forms a diffusion space S3 inside, and includes a plurality of side through holes 32 formed on the side surfaces and a plurality of bottom through holes 31 formed on the lower surface. In addition to the lower surface, a plurality of side through holes 32 for diffusing and jetting gas may also be formed on the side surfaces.

[0063] Among them, the gas diffusion unit 30 has any one of a circular, elliptical, and polygonal shape on a plane, and its shape corresponds to the plane shape of the introduction port 12 or the plane shape of the process chamber 10.

[0064] As an example, the gas diffusion unit 30 is as Figure 3 shown, presenting a quadrilateral on a plane. Overall, it is a hexahedron shape with the upper surface omitted. As another example, as Figure 4 shown, presenting a circular shape on a plane. Overall, it is a cylindrical shape with the upper surface omitted.

[0065] The connection pipe unit 70 can be a member that connects an external storage tank 50 storing a processing liquid and the atomization unit 100 of the gas supply module 20 described later to transmit the processing liquid.

[0066] Among them, the processing liquid is a liquid that is vaporized into a process gas for substrate processing of the present invention. For example, it is water (H 2 O).

[0067] The connection pipe portion 70 may be a member that connects between a storage tank 50 storing an external processing liquid and a gas supply module 20 and forms a flow path for the processing liquid to flow, and transfers the processing liquid to the gas supply module 20.

[0068] For example, the connection pipe portion 70 includes: a connection pipe 71 that connects between the storage tank 50 and the atomizing portion 100; a liquid control valve 72 that is provided in the connection pipe 71 to control the supply flow rate of the processing liquid, and by blocking the connection pipe 71, the connection pipe 71 on the atomizing portion 100 side is maintained in a vacuum state, and the connection pipe 71 on the storage tank 50 side is maintained in an atmospheric pressure state.

[0069] In addition, the connection pipe portion 70 further includes: an opening / closing valve 73 that is adjacent to the storage tank 50 side in the connection pipe 71 and supplies or blocks the processing liquid by opening or blocking the connection pipe 71.

[0070] The connection pipe 71 is a member that connects between the storage tank 50 and the atomizing portion 100, and a flow path for the processing liquid to flow can be formed inside.

[0071] The liquid control valve 72 is a member that is provided in the connection pipe 71 to control the supply flow rate of the processing liquid.

[0072] That is, the liquid control valve 72 appropriately adjusts the supply flow rate of the processing liquid by adjusting the opening degree of the connection pipe 71. Accordingly, after vaporization, the supply flow rate of the process gas is controlled.

[0073] Therefore, compared with the existing member for controlling the supply flow rate of the vaporized process gas, the liquid control valve 72 adjusts the flow rate of the liquid before vaporization to control the supply flow rate of the process gas, and has the advantages of improving the control accuracy and being easy to control.

[0074] In addition, in the blocked state, with the liquid control valve 72 as a reference, the connection pipe 71 at the rear end, that is, the connection pipe 71 on the gas supply module 20 side, is maintained in a vacuum state, and the connection pipe 71 at the front end, that is, the connection pipe 71 on the storage tank 50 side, is maintained in an atmospheric pressure state.

[0075] The opening / closing valve 73 is a member that is adjacent to the storage tank 50 side in the connection pipe 71 and supplies or blocks the processing liquid by opening or blocking the connection pipe 71, and various structures can be adopted.

[0076] That is, the opening and closing valve 73 is located at the position adjacent to the front end of the liquid control valve 72 in the connection pipe 71, i.e., on the side of the storage tank 50, and supplies or blocks the processing liquid by opening or blocking.

[0077] The gas supply module 20 is a component provided at the inlet 12 and supplies the process gas to the processing space S1 by vaporizing it using ultrasonic waves, and various structures can be adopted.

[0078] That is, the gas supply module 20 vaporizes the processing liquid into the process gas by using ultrasonic waves and pressure, rather than the existing heating-based method, and supplies it to the processing space S1.

[0079] The gas supply module of the present invention will be described in detail below with reference to the accompanying drawings.

[0080] The gas supply module of the present invention is as Figure 2 shown. As the gas supply module of the substrate processing apparatus, the substrate processing apparatus includes: a process chamber 10, which forms a processing space S1 inside and forms an inlet 12 for introducing the process gas; a gas supply module 20, which is provided at the inlet 12 and supplies the process gas to the processing space S1 by vaporizing it using ultrasonic waves. The gas supply module includes: an atomizing unit 100, which receives the processing liquid from the outside and atomizes and sprays it using ultrasonic waves; a main body unit 200, which is provided between the atomizing unit 100 and the process chamber 10, and forms a vaporization space S2 communicating with the processing space S1 inside. By making the vaporization space S2 form a low-pressure environment, the fluid transmitted by the atomizing unit 100 is vaporized into the process gas and supplied to the processing space S1.

[0081] Moreover, the gas supply module of the present invention further includes: a heater unit 300, which is provided on at least a part of the outer peripheral surface of the main body unit 200 to heat the vaporization space S2.

[0082] The atomizing unit 100 is a component that receives the processing liquid from the outside and atomizes and sprays it using ultrasonic waves, and various structures can be adopted.

[0083] That is, the atomizing unit 100 is combined with the connection pipe 71 of the aforementioned connection pipe unit 70 to receive the processing liquid, and uses ultrasonic waves to atomize the received processing liquid.

[0084] For example, the atomizing unit 100 includes: a main body portion 110, which forms an internal space for receiving the processing liquid from the outside; an ultrasonic vibration portion 120, which atomizes the processing liquid by vibrating in the internal space; and a nozzle portion 130, which is located at the end of the main body portion 110 and sprays the atomized fluid to the side of the main body unit 200.

[0085] The main body part 110 is a component that combines with the connection pipe part 70 at the upper end to receive the processing liquid, forms an internal space inside to accommodate the received processing liquid.

[0086] The ultrasonic vibration part 120 is a component that generates ultrasonic waves through vibration in the internal space to atomize the processing liquid, and various structures can be adopted.

[0087] That is, the ultrasonic vibration part 120 is composed of a piezoelectric element, is applied with control power based on the control signal of the controller described later, vibrates at a vibration frequency of 40 to 80 kHz to generate ultrasonic waves, and thereby atomizes the processing liquid in the internal space, that is, thinly atomizes it.

[0088] The nozzle part 130 is at the end of the main body part 110, more specifically at the lower end, and at least a part is located on the side of the vaporization space S2 of the main body part 100 described later to spray the fluid atomized by the ultrasonic vibration part 120 to the side of the vaporization space S2 of the main body part 100.

[0089] In addition, the gas supply module of the present invention has a controller 40 that controls the vibration frequency and amplitude of the ultrasonic vibration part 120 according to the pressure in the vaporization space S2 and the supply flow rate of the fluid sprayed into the vaporization space S2. Among them, the controller 40 transmits a control signal for controlling the ultrasonic vibration part 120 to guide the control of the power supplied to the ultrasonic vibration part 120.

[0090] Among them, the controller 40 forms a condition that it is easier to vaporize when the pressure in the vaporization space S2 is lower, and can be controlled to relatively reduce the vibration frequency of the ultrasonic vibration part 120 to increase the energy efficiency. Because it is not easy to vaporize when the pressure in the vaporization space S2 is relatively large, the vibration frequency of the ultrasonic vibration part 120 can be relatively increased.

[0091] And, the controller 40 can be controlled as follows: in order to increase the supply flow rate of the fluid supplied to the vaporization space S2, the amplitude of the ultrasonic vibration part 120 is increased, and in order to reduce the supply flow rate of the fluid supplied to the vaporization space S2, the amplitude of the ultrasonic vibration part 120 is reduced.

[0092] In addition, the atomization part 100 is a component whose internal space is connected to the vaporization space S2 of the main body part 200 described later, can form a low-pressure atmosphere in linkage with the generation of the vacuum pressure in the vaporization space S2, but accommodates the processing liquid and is farther from the processing space S1 than the vaporization space S2, so it maintains a relatively higher pressure than the vaporization space S2.

[0093] The main body 200 is a component that is disposed between the atomization unit 100 and the process chamber 10, and an evaporation space S2 that communicates with the processing space S1 is formed inside. By creating a low-pressure environment in the evaporation space S2, the fluid transmitted from the atomization unit 100 is vaporized into a process gas and supplied to the processing space S1.

[0094] As an example, the main body 200 is correspondingly formed at the inlet 12 on the upper surface of the aforementioned process chamber 10 and is coupled to the upper side of the process chamber 10. The upper end is coupled to the aforementioned atomization unit 100, and an opening 201 is formed through which the nozzle portion 130 penetrates to inject the fluid into the evaporation space S2.

[0095] For example, as shown in Figure 2 , the main body 200 includes: a main body body 210, one end of which is coupled to the atomization unit 100, and the other end is coupled to the inlet 12 from the outside of the process chamber 10; a baffle 220, which is disposed inside the main body body 210 and forms a plurality of through holes.

[0096] In addition, the main body 200 further includes: an inclined portion 230, which is located at at least a part of the inner surface of the main body body 210, and the inner diameter gradually or stepwise decreases towards the lower side.

[0097] The main body body 210 is a component whose upper end is coupled to the atomization unit 100 and whose lower end is coupled to the inlet 12 on the upper surface of the process chamber 10.

[0098] As an example, the main body body 210 has an integrated single structure, an evaporation space S2 is formed inside, and a baffle 220 is provided.

[0099] In addition, as another example, the main body body 210 includes: an upper main body body 211, which is located above the baffle 220 and forms an upper evaporation space S21 inside; a lower main body body 212, which is located below the baffle 220 and forms a lower evaporation space S22 inside.

[0100] Among them, the upper main body body 211 is a component whose lower surface is open, is provided with an open baffle 220, and is coupled to the baffle 220 through a flange, and an upper evaporation space S21 can be formed inside.

[0101] Among them, the upper evaporation space S21 is pressure-linked with the subsequent processing space S1 and can maintain a vacuum pressure state. As the fluid atomized and ejected through the nozzle portion 130 is exposed to the vacuum pressure atmosphere, the vaporization will become active.

[0102] The lower main body body 212 is a component whose upper surface is open, a baffle 220 is provided on the upper part, and a discharge port corresponding to the inlet 12 is formed on the lower surface.

[0103] Among them, the lower main body 212 is combined with the baffle 220 and the upper surface of the process chamber 10 through flanges on the upper and lower surfaces respectively. Among them, the inlet 12 corresponds to the outlet, and the process gas discharged through the outlet is sprayed into the processing space S1 through the inlet 12 and the diffusion part 30.

[0104] In addition, the lower main body 212 can form a lower gasification space S22 inside, and the lower gasification space S22 keeps a certain degree of temperature inside through the heater part 300 described later to prevent the re-condensation of the process gas transferred through gasification.

[0105] Moreover, the lower main body 212 functions as a buffer space between the upper gasification space S21 that generates the gasification of most of the fluid and the processing space S1, preventing the supply to the processing space S1 in a state of fine mist particles that have not been gasified, and providing a space where the fluid can be completely gasified.

[0106] The baffle 220 is a member provided inside the main body 210 and forming a plurality of through holes, which can guide the diffusion of the process gas generated by gasification in the gasification space S2.

[0107] Among them, the baffle 220 is plate-shaped, horizontally arranged between the aforementioned upper main body 211 and the lower main body 212, and forms a plurality of through holes in the vertical direction to diffuse and transfer the process gas.

[0108] The inclined part 230 is a member located in at least a part of the inner surface of the main body 210 and having a gradually or stepwise decreasing inner diameter towards the lower side.

[0109] For example, the inclined part 230 can be a member located on the lower side of the lower main body 212, protruding more towards the inner surface side towards the lower side and having a gradually decreasing inner diameter. Among them, the inclined part 230 is formed at a position on the inner surface of the main body 210 adjacent to the process chamber 10, and the inner diameter of the lowermost end is the same as the inner diameter of the inlet 12.

[0110] In addition, the main body part 200 keeps the pressure in the gasification space S2 in a low-pressure state lower than the preset normal pressure gasification pressure, and gasifies the fluid sprayed from the nozzle part 130 in a particulate fluid state.

[0111] That is, in a particulate liquid state, using the state variation of phase change from a liquid state to a gas state based on pressure conditions, through the pressure atmosphere of the gasification space S2 in a vacuum pressure state, the gasification of the liquid transferred in a fine mist form is guided.

[0112] Among them, the gasification pressure is a vacuum pressure, less than 10 Torr, and more preferably, less than 1 Torr.

[0113] In addition, the main body portion 200 can cause a linked movement of the vaporization space S2 based on the pressure of the processing space S1 of the foregoing process chamber 10 to guide a vacuum pressure atmosphere for vaporization, wherein the vaporization space S2 maintains the same pressure as the processing space S1 or maintains a pressure lower than that of the vaporization space S2.

[0114] The heater portion 300 is a component disposed on at least a part of the outer peripheral surface of the main body portion 200 to heat the vaporization space S2, and various structures can be adopted.

[0115] That is, the heater portion 300 is disposed on the main body portion 200, and more specifically, disposed on the outer peripheral surface of at least one of the upper main body body 211, the lower main body body 212, and the baffle 220 to perform heating and prevent the vaporized process gas in the vaporization space S2 from re-condensing.

[0116] The gas supply module of the present invention is as Figure 5 shown. Compared with the existing gas supply module, the supply flow rate per unit time can be greatly increased. More specifically, the experimental results show that when using the existing gas supply module and the substrate processing device, the first supply flow rate F1 is limited to about 10 ml per minute, but when using the gas supply module and the substrate processing device of the present invention, the second supply flow rate F2 reaches about 30 ml per minute, and the supply flow rate increases significantly by more than 3 times.

[0117] Accordingly, the gas supply module of the present invention can provide a significantly increased supply flow rate compared with the existing device, and accordingly, an unrestricted large-capacity gas supply can be achieved.

[0118] A part of the preferred embodiments that can be realized by the present invention has been described above. Therefore, as described above, the scope of the present invention should not be limited to the above embodiments, and the technical idea of the present invention described above and its fundamental technical idea are all included within the scope of the present invention.

Claims

1. A gas supply module, characterized in that, it includes: An atomizing part (100) that receives a processing liquid from the outside and atomizes and sprays it using ultrasonic waves; A main body part (200) that is combined with the atomizing part (100), forms a gasification space (S2) inside, and gasifies the atomized fluid transmitted by the atomizing part (100) by creating a low-pressure environment in the gasification space (S2).

2. The gas supply module according to claim 1, characterized in that, it further includes: A heater part (300) provided on at least a part of the outer peripheral surface of the main body part (200) to heat the gasification space (S2).

3. The gas supply module according to claim 1, characterized in that, The atomizing part (100) includes: A main body part (110) that forms an internal space for receiving the processing liquid from the outside; An ultrasonic vibration part (120) that atomizes the processing liquid by vibrating in the internal space; A nozzle part (130) located at the end of the main body part (110) that sprays the atomized fluid to the side of the main body part (200).

4. The gas supply module according to claim 3, characterized in that, it further includes: A controller (40) that controls the vibration frequency and amplitude of the ultrasonic vibration part (120) according to the pressure of the gasification space (S2) and the supply flow rate of the fluid sprayed into the gasification space (S2).

5. The gas supply module according to claim 1, characterized in that, The main body part (200) includes: A main body body (210) whose one end is combined with the atomizing part (100) and the other end is combined with the inlet (12) from the outside of the process chamber (10); A baffle (220) provided inside the main body body (210) that forms a plurality of through holes.

6. The gas supply module according to claim 5, characterized in that, The main body body (210) includes: An upper main body body (211) located on the upper side with respect to the baffle (220) and forms an upper gasification space (S21) inside; A lower main body body (212) located on the lower side with respect to the baffle (220) and forms a lower gasification space (S22) inside.

7. The gas supply module according to claim 5, characterized in that, The main body part (200) further includes: An inclined part (230) located on at least a part of the inner surface of the main body body (210), and the inner diameter gradually or stepwise decreases towards the lower side.

8. The gas supply module according to claim 7, characterized in that, The inclined part (230) is formed at a position on the inner surface of the main body body (210) adjacent to the process chamber (10), and the inner diameter of the lowermost end is the same as the inner diameter of the inlet (12).

9. The gas supply module according to claim 1, characterized in that, The main body part (200) reduces the pressure of the gasification space (S2) to a gasification pressure lower than the preset normal pressure to perform gasification of the fluid.

10. The gas supply module according to claim 9, characterized in that, The vaporization pressure is less than 10 Torr.

11. A substrate processing apparatus, characterized in that it includes: A process chamber (10) forms a processing space (S1) inside and has an inlet (12) for introducing a process gas; The gas supply module (20) according to any one of claims 1 to 10 is disposed at the inlet (12) and supplies the process gas to the processing space (S1) by vaporizing the process gas using ultrasonic waves.

12. The substrate processing apparatus according to claim 11, characterized in that it further includes: a gas diffusion part (30), which is disposed at the inlet (12) inside the processing space (S1) and diffuses the process gas transmitted through the inlet (12).

13. The substrate processing apparatus according to claim 12, characterized in that The gas diffusion part (30) forms a diffusion space (S3) inside and includes a plurality of side through-holes (32) formed on the side and a plurality of bottom through-holes (31) formed on the bottom.

14. The substrate processing apparatus according to claim 12, characterized in that The gas diffusion part (30) has any one of a circular, elliptical, and polygonal shape on a plane.

15. The substrate processing apparatus according to claim 11, characterized in that In the main body part (200), the vaporization space (S2) communicates with the processing space (S1), and the pressure of the vaporization space (S2) is linked to the pressure of the processing space (S1).

16. The substrate processing apparatus according to claim 11, characterized in that The pressure of the processing space (S1) is maintained lower than the pressure of the vaporization space (S2).

17. The substrate processing apparatus according to claim 11, characterized in that it further includes: a connection pipe part (70) that connects an external storage tank (50) storing the processing liquid and the atomization part (100) and transmits the processing liquid.

18. The substrate processing apparatus according to claim 17, characterized in that The connection pipe part (70) includes: a connection pipe (71) that connects between the storage tank (50) and the atomization part (100); a liquid control valve (72) that is disposed on the connection pipe (71) to control the supply flow rate of the processing liquid, and by blocking the connection pipe (71), the connection pipe (71) on the atomization part (100) side is maintained in a vacuum state, and the connection pipe (71) on the storage tank (50) side is maintained in an atmospheric pressure state.

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