Heat medium supply device and substrate processing apparatus including same

Abstract

The present invention relates to a heat medium supply device and a substrate processing apparatus including the same, and more particularly, to a heat medium supply device for adjusting a temperature by supplying a heat medium and a substrate processing apparatus including the same. Disclosed is a heat medium supply device for supplying a heat medium to a process chamber (10) in which a processing space for substrate processing is formed, the heat medium supply device comprising: a plurality of heat medium flow path parts (100) for supplying the heat medium by being connected to the walls of the process chamber (10), which are separated from each other; and a plurality of heat medium heating units (300) that form a part of the heat medium flow path unit (100) and independently heat the heat medium supplied through the heat medium flow path unit (100).

Description

Technical Field

[0001] The present invention relates to a heat medium supply device and a substrate processing device including the same, and more particularly, to a heat medium supply device for adjusting the temperature of a process chamber main body by supplying a heat medium and a substrate processing device including the same. Background Art

[0002] Generally, a substrate processing device refers to a device that performs substrate processing such as deposition, etching, and heat treatment on a substrate using process gases and an appropriate temperature atmosphere in a sealed processing space formed in a process chamber.

[0003] In particular, heat treatment is performed to improve film characteristics such as crystallization and phase change of a predetermined film deposited on a substrate such as a silicon wafer or glass used for manufacturing semiconductors, flat panel displays, and solar cells.

[0004] A representative heat treatment process is LTPS (Low Temperature Poly Crystallization Silicon) for forming a TFT using polycrystalline silicon on a glass substrate to manufacture a high-quality display such as an AMOLED, or a process of forming and hardening polyimide on a substrate to form a flexible substrate.

[0005] In addition, when manufacturing a liquid crystal display or a thin film crystalline silicon solar cell, the heat treatment process may include a process of crystallizing amorphous silicon deposited on a substrate into polycrystalline silicon.

[0006] In addition, a problem with existing substrate processing devices is that various process gases and by-products used and generated during substrate processing condense on the inner wall surface of the process chamber having a relatively low temperature, thereby contaminating the device.

[0007] To improve this problem, existing substrate processing devices supply a heat medium to the inner wall surface of the process chamber to maintain the temperature of the inner wall surface of the process chamber at 70 degrees or more. More specifically, the heat medium is circulated in the process chamber, the heat medium supply device, and the heat exchange device, and a heat medium at an appropriate temperature is supplied to the process chamber.

[0008] However, due to the heat medium circulation structure of existing substrate processing devices, the allowable temperature of the heat medium is limited, and thus the maximum temperature required for the process in the process chamber is limited. For example, the temperature of the processing space in the process chamber cannot be raised to 550 °C or more.

[0009] More specifically, in the polyimide curing process, in order to remove the by-product solvent adhering to the inner wall of the process chamber, the internal temperature of the process chamber needs to be heated to above 550°C at a certain cycle. However, based on the heat medium circulation structure of the existing single heat exchange device, when the internal temperature of the process chamber reaches above 550°C, due to overheating of the heat medium, the process chamber may be damaged and deformed, and there is a problem that the rise in the internal temperature of the process chamber is restricted.

[0010] In addition, although multiple heat exchange devices are installed in the heat medium circulation structure, the internal temperature of the process chamber can also be heated to above 550°C. However, the cost increases and the installation area increases excessively due to the multiple heat exchange devices.

[0011] In addition, since the structure of heating the heat medium by a single heat exchange device and re-supplying it to the process chamber side is adopted, the temperatures of the heat medium supplied to each wall of the process chamber are the same, so there is a problem that the temperature cannot be controlled according to the position of the process chamber.

[0012] Moreover, the existing substrate processing device must be equipped with a heat exchange device, so the space utilization rate is low. When multiple heat exchangers are provided to control the temperature according to the position of the process chamber, the space utilization rate will be further reduced, and the maintenance frequency and cost will increase. Summary of the Invention

[0013] Technical Problems to be Solved

[0014] An object of the present invention is to provide a heat medium supply device capable of adjusting the temperature according to the position of the wall of the process chamber and a substrate processing device including the same in order to solve the above problems.

[0015] Means for Solving the Problems

[0016] The present invention is proposed to achieve the above problems. The present invention provides a heat medium supply device, which is a heat medium supply device for supplying heat medium to a process chamber 10 having a processing space for substrate processing formed therein, including: a plurality of heat medium flow path parts 100, which are respectively connected to the walls of the process chamber 10 that are distinguished from each other to supply the heat medium; a plurality of heat medium heating parts 300, which form a part of the heat medium flow path parts 100 and independently heat the heat medium supplied through the heat medium flow path parts 100.

[0017] It further includes: a heat medium supply line 210, to which a plurality of the heat medium flow path parts 100 are branched and connected, and which transfers the heat medium from the outside to the plurality of heat medium flow path parts 100.

[0018] The hot medium flow path section 100 includes: a supply flow path 110 that transfers the hot medium heated by the hot medium heating section 300 to the wall of the process chamber 10; a discharge flow path 120 that discharges the hot medium that has completed heat exchange from the wall of the process chamber 10.

[0019] The hot medium heating section 300 includes: a heating flow path section 500 in which a flow path S for the hot medium to flow is formed inside; a heater 310 that is provided in the heating flow path section 500 to heat the hot medium.

[0020] In the heating flow path section 500, the flow path S is formed in a spiral shape in the length direction.

[0021] In the heating flow path section 500, the flow path S guides the movement of the hot medium between one end and the other end of the hot medium multiple times.

[0022] The heating flow path section 500 includes: a first flow path member 510 having a discharge port 511a for discharging the hot medium formed at one end and an insertion port 512a formed at the other end; a second flow path member 520 that forms a first internal flow path S1 and at least a part of which is inserted into the first flow path member 510 through the insertion port 512a, and a second internal flow path S2 that communicates with the first internal flow path S1 is formed between the outer surface and the inner surface of the first flow path member 510.

[0023] The heating flow path section 500 includes: a cover member 530 that surrounds the outer surface of the first flow path member 510 and forms a third internal flow path S3 that communicates with the second internal flow path S2 between the outer surface of the first flow path member 510.

[0024] The second flow path member 520 includes: a second flange 521 having an introduction port 521a for introducing the hot medium formed at one end; a second extension pipe portion 522 that extends from the second flange 521 to the other end side, in which the first internal flow path S1 is formed inside, and at least a part of which is inserted into the first flow path member 510.

[0025] A plurality of first communication holes 522a for communicating the first internal flow path S1 and the second internal flow path S2 are formed on the outer peripheral surface of the other end side of the second extension pipe portion 522.

[0026] The first flow path member 510 includes: a first flange 511 having a discharge port 511a for discharging the hot medium formed at the other end; a first extension pipe portion 512 that extends from the first flange 511 to one end side, and an insertion port 512a is formed at one end for inserting at least a part of the second flow path member 520.

[0027] On the outer peripheral surface of the other end side of the first extension pipe portion 512, a plurality of second communication holes 512b communicating with the discharge port 511a are formed.

[0028] A plurality of the heaters 310 are provided outside the first flow path member 510.

[0029] The heater 310 is provided to the flow path S.

[0030] The heat medium heating unit 300 further includes: a flow velocity reducing member 320 provided in the flow path S to reduce the flow velocity of the heat medium.

[0031] The heater 310 is provided to the flow velocity reducing member 320.

[0032] The heat medium heating unit 300 further includes: a temperature sensor 330 located in the heating flow path portion 500 to measure the temperature of the flow path S.

[0033] It further includes: a flow rate adjusting unit 400 respectively located in the heat medium flow path portion 100 to independently adjust the flow rate of the heat medium.

[0034] The flow rate adjusting unit 400 is provided on the opposite side of the process chamber 10 of the heat medium heating unit 300 to transfer the heat medium to the heat medium heating unit 300 side.

[0035] It further includes: a bypass line 600 for bypassing the heat medium supplied to communicate with the flow path S in the heat medium heating unit 300.

[0036] The bypass line 600 includes: a plurality of branched bypass lines 610 respectively connected to a plurality of the heat medium heating units 300 to form a flow rate regulating valve; a main bypass line 620 connected to the plurality of branched bypass lines 610.

[0037] Moreover, the present invention discloses a substrate processing apparatus, including: a process chamber 10 with a processing space for substrate processing formed inside; a heat medium supply device 50 respectively connected to the wall bodies of the process chamber 10 that are separated from each other to supply heat medium.

[0038] It may include: a gas injection unit 20 located on one side of the process chamber 10 to inject process gas into the processing space; a gas discharge unit 30 located on the other side of the process chamber 10 to discharge the gas in the processing space.

[0039] The present invention is proposed to achieve the object of the present invention as described above, and discloses a substrate processing apparatus, including: a process chamber 10, in which a processing space for substrate processing is formed; a plurality of heat medium flow path parts 100, which are respectively connected to the wall bodies of the process chamber 10 that are distinguished from each other to supply a heat medium; a heat medium supply part 200, which adjusts at least one of the flow rate and temperature of the heat medium and supplies it to the heat medium flow path parts 100 independently of each other.

[0040] It may include: a gas injection part 20, which is located on a first wall body 11 of the wall body of the process chamber 10 and injects a process gas into the processing space.

[0041] It further includes: a gas discharge part 30, which is located on a second wall body 12 of the wall body of the process chamber 10 and discharges the gas in the processing space.

[0042] The first wall body 11 and the second wall body 12 face each other.

[0043] The heat medium supply part 200 supplies the heat medium such that the temperature rise amplitude of the first wall body 11 based on the heat medium supply is greater than the temperature rise amplitude of the remaining wall bodies other than the first wall body 11.

[0044] Compared with other wall bodies, the heat medium supply part 200 supplies the heat medium at a higher temperature to the first wall body 11 among the wall bodies of the process chamber 10.

[0045] The heat medium supply part 200 supplies the heat medium such that the temperature rise amplitude of the second wall body 12 based on the heat medium supply is less than the temperature rise amplitude of the remaining wall bodies other than the second wall body 12.

[0046] Compared with other wall bodies, the heat medium supply part 200 supplies the heat medium at a lower temperature to the second wall body 12 among the wall bodies of the process chamber 10.

[0047] Compared with other wall bodies, the heat medium supply part 200 supplies the heat medium to the first wall body 11 among the wall bodies of the process chamber 10 at a greater flow rate per unit time.

[0048] The process chamber 10 is a hexahedron, and a plurality of the heat medium flow path parts 100 are respectively connected to the first wall body 11 and the second wall body 12, and except for the first wall body 11 and the second wall body 12, a single heat medium flow path part 100 is respectively connected.

[0049] The hot medium flow path section 100 includes an upper hot medium flow path section connected to the upper side of one wall of the process chamber 10 and a lower hot medium flow path section connected to the lower side of the same wall as the upper hot medium flow path section. The hot medium supply section 200 supplies the hot medium such that the temperature rise amplitude of the upper side of the wall of the process chamber 10 based on the hot medium supply of the lower hot medium flow path section is greater than the temperature rise amplitude of the lower side of the wall of the process chamber 10 based on the hot medium supply of the upper hot medium flow path section.

[0050] The process chamber 10 is a hexahedron and includes: a front section 13 including an opening 19 for transporting a substrate into and out of the processing space and an opening and closing door 18 for opening and closing the opening 19; and a rear section formed on a side opposite to the front section 13.

[0051] In the front section 13, a heating flow path through which the hot medium flows is formed inside the opening and closing door 18, and the corresponding hot medium flow path section 100 is connected to the opening and closing door 18.

[0052] The hot medium supply section 200 supplies the hot medium such that the temperature rise amplitude of the upper surface 14 of the process chamber 10 based on the hot medium supply is less than the temperature rise amplitude of the lower surface of the process chamber 10.

[0053] The hot medium flow path section 100 includes: a supply flow path 110 for transferring the hot medium supplied through the hot medium supply section 200 to the wall of the process chamber 10; and a discharge flow path 120 for transferring the hot medium that has completed heat exchange from the wall of the process chamber 10 to the hot medium supply section 200.

[0054] In the remaining hot medium flow path sections 100 other than the hot medium flow path section 100 connected to the first wall 11 and the second wall 12, the supply flow path 110 is adjacent to the first wall 11 side, and the discharge flow path 120 is adjacent to the second wall 12 side.

[0055] The hot medium supply section 200 includes: a hot medium supply line 210 for receiving the hot medium from the outside and independently transferring the hot medium to the hot medium flow path section 100; and a hot medium discharge line 220 for receiving the hot medium from the hot medium flow path section 100 and discharging it to the outside.

[0056] The hot medium supply section 200 supplies the hot medium such that the temperature of the inner wall of the process chamber 10 is lower than the temperature of the processing space.

[0057] The hot medium supply section 200 supplies the hot medium such that the temperature of the inner wall of the process chamber 10 is maintained at 60°C or higher and 300°C or lower.

[0058] The thermal medium supply unit 200 is adjusted as follows. When the temperature of the processing space is 250 °C or lower, the flow rate and temperature of the thermal medium are increased to adjust the temperature of the inner wall of the process chamber 10. When the temperature of the processing space exceeds 250 °C, the flow rate of the thermal medium is increased and the temperature is decreased to adjust the temperature of the inner wall of the process chamber 10.

[0059] Effects of the Invention

[0060] The advantages of the thermal medium supply device of the present invention and the substrate processing device including the same are that by controlling the temperature of the thermal medium supplied to the inner wall surfaces of specific positions in the process chamber, the inner wall surfaces maintain a uniform temperature, preventing condensation of various process gases and by-products on the inner wall of the process chamber.

[0061] In particular, the advantages of the thermal medium supply device of the present invention and the substrate processing device including the same are that temperature control of each inner wall surface of the process chamber can be achieved without multiple heat exchange devices, reducing the occupied space and increasing the space utilization rate, and compensating for the temperature difference between the inner wall surfaces of the process chamber.

[0062] Moreover, the advantages of the thermal medium supply device of the present invention and the substrate processing device including the same are that the existing heat exchange device is removed to simplify the structure, improve the space utilization rate, and reduce the maintenance cost and frequency.

[0063] In particular, the advantages of the thermal medium supply device of the present invention and the substrate processing device including the same are that while removing the existing heat exchange device, the thermal medium circulation structure is changed to a simple supply and discharge mode, there is no upper temperature limit for substrate processing, and substrate processing can be performed at a temperature of 550 °C or higher.

[0064] Furthermore, the advantages of the thermal medium supply device of the present invention and the substrate processing device including the same are that the heat exchange time of the heated and supplied thermal medium is increased, the heat exchange efficiency is improved, and the thermal medium can be heated with relatively less energy.

[0065] Moreover, the advantages of the thermal medium supply device of the present invention and the substrate processing device including the same are that before supplying the already heated thermal medium, the flow rate of the thermal medium before supply can be precisely adjusted through a bypass. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] Figure 1 is a perspective view showing the substrate processing device of the present invention.

[0067] Figure 2 Schematically shows Figure 1 the connection relationship between the thermal medium supply unit and the process chamber in the substrate processing device.

[0068] Figure 3 It is a diagram showing Figure 1 the state of the heat medium supply device in the substrate processing apparatus.

[0069] Figure 4 It is a diagram showing Figure 3 the exploded perspective view of the structure of the heat medium heating unit in the substrate processing apparatus.

[0070] Figure 5 It is a diagram showing Figure 3 the internal state of the substrate processing apparatus with the heater of the heat medium heating unit removed.

[0071] Figure 6 It is a diagram showing Figure 3 the cross-sectional view of the heat medium heating unit in the substrate processing apparatus.

[0072] (Description of reference numerals)

[0073] 100: Heat medium flow path unit

[0074] 300: Heat medium heating unit

[0075] 400: Flow rate control unit Detailed implementation mode

[0076] The heat medium supply device of the present invention and the substrate processing apparatus including the same will be described below with reference to the drawings.

[0077] The substrate processing apparatus of the present invention Figure 1 As shown, it includes: a process chamber 10, in which a processing space for substrate processing is formed; a plurality of heat medium flow path units 100, which are respectively connected to the wall bodies of the process chamber 10 that are distinguished from each other to supply a heat medium; a heat medium supply unit 200, which adjusts at least one of the flow rate and temperature of the heat medium and supplies it to the heat medium flow path unit 100 independently of each other.

[0078] Moreover, the substrate processing apparatus of the present invention includes: a gas injection unit 20, which is located in the first wall body 11 of the wall body of the process chamber 10 and injects a process gas into the processing space.

[0079] Moreover, the substrate processing apparatus of the present invention further includes: a gas discharge unit 30, which is located in the second wall body 12 of the wall body of the process chamber 10 and discharges the gas in the processing space.

[0080] Moreover, the substrate processing apparatus of the present invention further includes: a support frame 40, which is provided with the heat medium supply device 50 described later and is used to support the process chamber 10.

[0081] Herein, the wall body refers to a structure for forming a closed processing space inside the process chamber 10, including the bottom and the top.

[0082] Moreover, the process gas of the present invention is a general term for the gases used in the substrate processing process. More specifically, it is a general term for the purge gas for discharging the processing gas for substrate processing, various fumes that may be generated during the process, and various by-products generated by the fumes.

[0083] The substrate 1 to be processed in the present invention includes all substrates such as substrates for display devices such as LEDs and LCDs, semiconductor substrates, and solar cell substrates.

[0084] In addition, the substrate processing process of the substrate processing device of the present invention has the meaning of including a deposition process, an etching process, a heat treatment process, etc. In particular, it may include a process for removing impurities from the substrate 1.

[0085] And, the heat medium is a fluid that moves along the heating flow path formed in the wall of the process chamber 10 and performs heat exchange with the processing space and the inner wall of the process chamber 10 to adjust the temperature of the inner wall of the process chamber 10, and cooling water (Process Clling Water, PCW) can be used.

[0086] In addition, as another example, the heat medium is CDA (Clean Dry Air), and inert gases such as nitrogen or argon can be used.

[0087] The process chamber 10 is a component in which a processing space for substrate processing is formed inside, and various structures can be adopted.

[0088] That is, the process chamber 10 is a component in which an opening 19 for introducing and discharging the substrate 1 is formed in the front and a processing space for processing the substrate 1 is formed inside, and various structures can be adopted.

[0089] For example, the process chamber 10 includes a chamber body in which a processing space is formed inside and an opening / closing door 18 for opening and closing the opening 19 formed in the chamber body.

[0090] The chamber body is a component in which a processing space is formed inside and an opening 19 for introducing and discharging the substrate 1 is formed in the front, and the substrate 1 is transported into and out of the inside by opening and closing the opening / closing door 18.

[0091] In addition, the chamber body is formed as a hexahedron with a length in the vertical direction to process a plurality of substrates 1, and an opening 19 for transporting the substrate 1 in and out is formed on the front side.

[0092] More specifically, the chamber body Figure 1 and Figure 2As shown, an opening 19 for loading and unloading a plurality of substrates 1 in the vertical direction is formed in the front side of the front surface. As another example, corresponding to the loading and unloading of more than a plurality of substrates 1 while being separated from each other in the vertical direction, a plurality of grooves (not shown in the drawings) are formed in the vertical direction.

[0093] In addition, in order to prevent various process gases and by-products from condensing on the inner wall side with a relatively low temperature due to substrate processing in the processing space, the process chamber 10 maintains an appropriate temperature by means of a heat medium supplied to the wall body by a heat medium supply unit 200 described later.

[0094] More specifically, in the process chamber 10, in order to keep the temperature of the wall body at 70 °C or higher, a flow path for the heat medium to flow is formed inside the wall body so that the heat medium supplied by the heat medium supply unit 200 flows.

[0095] As an example, the process chamber 10 is a hexahedron, including an opening 19 for loading and unloading substrates into and out of the processing space, a front surface portion 13 including an opening and closing door 18 for opening and closing the opening 19, and a rear surface portion formed on a surface opposite to the front surface portion 13.

[0096] Furthermore, the process chamber 10 further includes a first wall body 11 and a second wall body 12 that form side surfaces together with the front surface portion 13 and the rear surface portion. Among them, with the front as a reference, the first wall body 11 forms the left side surface, and the second wall body 12 forms the right side surface.

[0097] Moreover, since the process chamber 10 forms an upper surface 14 and a lower surface to form a closed processing space, it can be formed as a hexahedron.

[0098] Among them, as described above, in the process chamber 10, heating flow paths for independently flowing heat medium are respectively formed in the front surface portion 13, the rear surface portion, the first wall body 11, the second wall body 12, the upper surface 14, and the lower surface. Accordingly, an appropriate temperature is maintained to prevent the condensation of various by-products, organic substances, and process gases on the inner surface.

[0099] The front surface portion 13 is formed by the opening 19 and the opening and closing door 18. A heating flow path for the heat medium to flow is formed in the opening and closing door 18, and a corresponding heat medium flow path portion 100 is connected to the opening and closing door 18.

[0100] Furthermore, in order to be opposite to the front surface portion 13 and to approach the processing space for maintenance and the like, a rear opening (not shown in the drawings) and a rear door (not shown in the drawings) may be formed on the rear surface portion. Among them, a heating flow path is also formed in the rear door together with the aforementioned front surface portion 13, and the heat medium flow path portion 100 may be connected to the rear door.

[0101] The gas injection unit 20 is a member that is located in the first wall body 11 of the wall body of the process chamber 10 and injects process gas into the processing space, and various structures can be adopted.

[0102] That is, the gas injection unit 20 is disposed on the first wall 11 of the chamber body such that the processing space and the external gas supply device communicate with each other, and the process gas supplied by the gas supply device is injected into the processing space.

[0103] For example, the gas injection unit 20 may include a plurality of nozzles communicating with the processing space on the side of the process chamber 10, a main pipe 21 to which the plurality of nozzles are commonly connected, and a connecting pipe 22 connected to the main pipe 21.

[0104] The gas discharge unit 30 is a member that is located on the second wall 12 of the wall of the process chamber 10 and discharges the gas in the processing space, and various structures can be adopted.

[0105] That is, in order to communicate the processing space with the external gas exhaust device, i.e., the exhaust pump, the gas discharge unit 30 is disposed on the second wall of the chamber body, i.e., the side opposite to the first wall 11, so as to discharge the process gas and various by-products in the processing space.

[0106] For example, the gas discharge unit 30 may include: a plurality of exhaust ports that communicate with the processing space on the second wall of the process chamber 10; a main exhaust pipe 31 to which the plurality of exhaust ports are commonly connected; and a connecting exhaust pipe 32 connected to the main exhaust pipe 31.

[0107] The support frame 40 is a member that disposes the heat medium supply device 50 and supports the process chamber 10, and various structures can be adopted.

[0108] That is, the support frame 40 is a member that supports the process chamber 10, forms a space below the process chamber 10, and the heat medium supply device 50 described later can be disposed therein.

[0109] In addition, as described above, in the substrate processing apparatus of the present invention, various members such as the gas injection unit 20, the gas discharge unit 30, and the opening / closing door 18 are disposed at various positions of the process chamber 10, and it is necessary to independently adjust the temperature and flow rate of the heat medium at each position of the wall of the process chamber 10.

[0110] More specifically, the first wall 11 provided with the gas injection unit 20 that continuously supplies a relatively low-temperature process gas has a lower temperature than other positions, and the second wall 12 provided with the gas discharge unit 30 has a relatively higher temperature.

[0111] Furthermore, the relatively low-temperature process gas moves to the lower side of the process chamber 10 in the processing space, and the relatively high-temperature process gas moves to the upper side 14 of the process chamber 10 in the processing space. The relative temperature of the upper side 14 is higher, and the relative temperature of the lower side is lower.

[0112] Therefore, the temperature and flow rate of the heat medium can be independently adjusted according to each position of the process chamber 10.

[0113] For this purpose, the heat medium flow path part 100 may be a member that supplies the heat medium by being respectively connected to the walls of a plurality of process chambers 10 that are distinguished from each other.

[0114] That is, the heat medium flow path part 100 may be a member that supplies the heat medium supplied by a heat medium supply part 200 described later to the process chamber 10 and discharges the heat medium that has completed heat exchange in the process chamber 10 to the heat medium supply part 200 side.

[0115] For example, the heat medium flow path part 100 may include: a supply flow path 110 that transfers the heat medium supplied by the heat medium supply part 200 to the wall of the process chamber 10; a discharge flow path 120 that transfers the heat medium that has completed heat exchange from the wall of the process chamber 10 to the heat medium supply part 200.

[0116] That is, the supply flow path 110 may be a member that is connected between the heat medium supply part 200 and the process chamber 10 to supply the heat medium, and is respectively provided on the walls of the process chamber 10 that are distinguished from each other to form a plurality of them.

[0117] And, the discharge flow path 120 is a member that transfers the heat medium that has completed heat exchange from the wall of the process chamber 10 to the heat medium supply part 200. Like the supply flow path 110, it is respectively provided on the walls of the process chamber 10 that are distinguished from each other to form a plurality of them.

[0118] That is, taking the hexahedral process chamber 10 as an example, at least six of the heat medium flow path parts 100 corresponding to each wall may be provided. The first wall 11 with a relatively high or low temperature and a relatively high necessity for temperature control of the gas injection part 20 and the second wall 12 with a gas discharge part 30 may be provided.

[0119] That is, as shown in the heat medium flow path part 100 Figure 2 , a plurality of them are respectively connected to the first wall 11 and the second wall 12. The remaining parts other than the first wall 11 and the second wall 12 are respectively connected singly. For the hexahedral process chamber 10, the first wall 11 and the second wall 12 respectively have two heat medium flow path parts 100, and the remaining parts have one heat medium flow path part 100, and a total of eight heat medium flow path parts 100 are provided.

[0120] In addition, the relative temperature of the first wall 11 is relatively low and the relative temperature of the second wall 12 is relatively high. The front part 13, the rear part, the upper surface 14 and the lower surface adjacent to the first wall 11 and the second wall 12 will also be affected by them. Therefore, appropriate temperature compensation is required.

[0121] Therefore, at a position where the remaining heat medium flow path portions 100 other than the heat medium flow path portion 100 connected to the first wall body 11 and the second wall body 12 are adjacent to the relatively lower temperature first wall body 11, a supply flow path 110 for supplying the heat medium before heat exchange is provided, and at a position adjacent to the relatively higher temperature second wall body 12, a discharge flow path 120 for discharging the heat medium that has undergone a certain degree of heat exchange is provided.

[0122] That is, among the remaining heat medium flow path portions 100 other than the heat medium flow path portion 100 connected to the first wall body 11 and the second wall body 12, the supply flow path 110 is adjacent to the first wall body 11 side, and the discharge flow path 120 is adjacent to the second wall body 12 side.

[0123] The heat medium supply portion 200 is a component that supplies the heat medium to the heat medium flow path portion 100 independently by adjusting at least one of the flow rate and temperature of the heat medium, and can adopt various structures.

[0124] That is, the heat medium supply portion 200 can be a component that supplies the heat medium to the plurality of heat medium flow path portions 100 independently by adjusting at least one of the flow rate and temperature of the heat medium due to the necessity of independently controlling the temperature of the heat medium at each position of the wall body of the process chamber 10 described above.

[0125] For example, a process gas at a low temperature is supplied through the gas injection portion 20. In order to compensate for the temperature of the relatively lower temperature first wall body 11, the heat medium supply portion 200 supplies the heat medium such that the temperature rise amplitude of the first wall body 11 based on the heat medium supply is greater than the temperature rise amplitude of the remaining wall bodies other than the first wall body 11.

[0126] Therefore, the heat medium supply portion 200 can supply a heat medium at a higher temperature to the first wall body 11 among the wall bodies of the process chamber 10 than the remaining portions. More specifically, it is set such that the temperature of the heat medium discharged through the discharge flow path 120 of the heat medium flow path portion 100 corresponding to the first wall body 11 is maintained at 60°C, and the temperature of the remaining heat medium is maintained at a temperature lower than 60°C.

[0127] Moreover, a high-temperature process gas heated according to the temperature of the processing space is discharged through the gas discharge portion 30. In order to compensate for the temperature of the relatively higher temperature second wall body 12, the heat medium supply portion 200 supplies the heat medium such that the temperature rise amplitude of the second wall body 12 based on the heat medium supply is less than the temperature rise amplitude of the remaining wall bodies other than the second wall body 12.

[0128] In particular, compared with the first wall, the heat medium supply unit 200 supplies the second wall 12 with a heat medium at a lower temperature. More specifically, it is set such that the temperature of the heat medium discharged through the discharge flow path 120 of the heat medium flow path unit 100 corresponding to the second wall 12 is maintained at 50°C, and the temperature of the remaining heat medium is maintained at a temperature higher than 50°C.

[0129] In addition, the heat medium supply unit 200 supplies the heat medium to the first wall 11 in a relatively larger amount per unit time compared to other walls of the process chamber 10 to increase the total amount of heat exchange with the walls of the process chamber 10.

[0130] For example, the heat medium supply unit 200 supplies the heat medium through a plurality of heat medium flow path units 100 connected to the first wall 11 at a flow rate greater than the flow rate per unit time of the heat medium supplied to the remaining walls.

[0131] And, as another example, considering that the process gas at a relatively higher temperature is adjacent to the upper surface 14 side and the process gas at a relatively lower temperature is adjacent to the lower surface side of the processing space, the heat medium supply unit 200 supplies the heat medium such that the temperature rise amplitude of the upper surface 14 of the process chamber 10 based on the heat medium supply is less than the temperature rise amplitude of the lower surface of the process chamber 10.

[0132] For example, the heat medium supply unit 200 supplies a heat medium at a higher temperature to the lower surface compared to the upper surface 14 of the process chamber 10.

[0133] And, the heat medium supply unit 200 supplies the heat medium to the lower surface at a relatively larger flow rate per unit time compared to the upper surface 14 of the process chamber 10.

[0134] In addition, as another example, on one wall of the process chamber 10, a plurality of heat medium flow path units 100, i.e., supply flow paths 110, are connected to supply the heat medium independently.

[0135] That is, on the upper side of one wall of the process chamber 10, an upper heat medium flow path unit is connected to supply the heat medium, and for the same wall, a lower heat medium flow path unit is connected to supply the heat medium on the lower side.

[0136] Among them, the heat medium supplied through the upper heat medium flow path unit moves along the heating flow path formed on the upper side of one wall of the process chamber 10, and the heat medium supplied through the lower heat medium flow path unit moves along the heating flow path formed on the lower side of the same wall of the process chamber 10.

[0137] In this case, in the processing space, the high-temperature process gas is located on the upper side and the relatively low-temperature process gas is located on the lower side, and different temperature compensations are required.

[0138] Therefore, the heat medium supply unit 200 supplies the heat medium such that the temperature rise amplitude on the upper side of the wall of the process chamber 10 based on the heat medium supply through the lower heat medium flow path unit is greater than the temperature rise amplitude on the lower side of the wall of the process chamber 10 based on the heat medium supply through the upper heat medium flow path unit.

[0139] More specifically, the heat medium supply unit 200 supplies the heat medium such that the temperature of the heat medium supplied to the lower heat medium flow path unit is greater than the temperature of the heat medium supplied to the upper heat medium flow path unit, and can be supplied at different flow rates as needed.

[0140] Moreover, the heat medium supply unit 200 can supply the heat medium by adjusting at least one of the flow rate and temperature of the heat medium, so that the inner wall temperature of the process chamber 10 is maintained between 60°C and 300°C.

[0141] Accordingly, when the inner wall temperature of the process chamber 10 is maintained within the range of 60°C to 300°C, various by-products on the inner wall of the process chamber 10 can be prevented from condensing, and deformation of the wall of the process chamber 10 can also be prevented.

[0142] In this case, the heat medium supply unit 200 supplies the heat medium such that the inner wall temperature of the process chamber 10 is lower than the temperature of the processing space, thereby adjusting the inner wall temperature of the process chamber 10.

[0143] More specifically, when the inner wall temperature of the process chamber 10 is 60°C or lower, there is a problem that process gases and by-products condense on the inner wall to generate a large amount of particulate matter. When the inner wall temperature of the process chamber 10 exceeds 300°C, there is a problem of deformation of the wall of the process chamber 10. Therefore, it is necessary to keep the inner wall temperature of the process chamber 10 within the range of 60°C to 300°C.

[0144] Moreover, when the temperature of the processing space is 250°C or lower, the heat medium supply unit 200 increases the flow rate and temperature of the heat medium to adjust the inner wall temperature of the process chamber 10. When the temperature of the processing space exceeds 250°C, the heat medium supply unit 200 increases the flow rate of the heat medium and decreases the temperature to adjust the inner wall temperature of the process chamber 10.

[0145] More specifically, to increase the temperature of the heat medium, the power of the heat medium heating unit 300 described later is adjusted. Among them, the lower the power, the more beneficial it is. When the temperature of the processing space exceeds 250°C and the inner wall of the process chamber 10 remains at a relatively high temperature, the power is reduced using the temperature of the processing space to reduce the temperature of the heat medium and increase the flow rate, thereby adjusting the inner wall temperature of the process chamber 10.

[0146] Among them, the inner wall temperature of the process chamber 10 can also be adjusted by increasing the power and simultaneously increasing the temperature and flow rate of the heat medium.

[0147] In addition, when the temperature of the processing space is below 250°C, the inner wall of the process chamber 10 is at a relatively low temperature. The power for heating the heat medium is increased and the flow rate is simultaneously increased to adjust the temperature of the inner wall of the process chamber 10.

[0148] In addition, the heat medium supply unit 200 supplies the heat medium from the outside and discharges it, rather than circulating the supplied heat medium and supplying it again. For example, it may include: a heat medium supply line 210 that receives the heat medium from the outside and independently transfers the heat medium to the heat medium flow path unit 100; a heat medium discharge line 220 that receives the heat medium from the heat medium flow path unit 100 and discharges it to the outside.

[0149] That is, the heat medium supply unit 200 receives the heat medium through an external heat medium supply source, heats it at an appropriate flow rate and appropriate temperature, and independently supplies it to each heat medium flow path unit 100. For this purpose, it may include a heat medium supply line 210 that receives the heat medium from the outside and a heat medium discharge line 220 that is connected to each discharge flow path 120 of the heat medium flow path unit 100 and discharges the heat medium to the outside.

[0150] Moreover, the heat medium supply line 210 and the heat medium discharge line 220 are respectively connected in a bifurcated manner to a plurality of supply flow paths 110 and a plurality of discharge flow paths 120.

[0151] Next, a heat medium supply device for supplying a heat medium to the aforementioned substrate processing device will be described with reference to the accompanying drawings.

[0152] In addition, the same parts as those described above are omitted below, so the same content as described above can be applied.

[0153] The heat medium supply device of the present invention, as Figure 3 shown, includes: a plurality of heat medium flow path units 100, which are respectively connected to the wall bodies of the process chamber 10 that are distinguished from each other to supply the heat medium; a plurality of heat medium heating units 300, which form a part of the heat medium flow path units 100 and independently heat the heat medium supplied through the heat medium flow path units 100.

[0154] Moreover, the heat medium supply device of the present invention may further include: a flow rate adjustment unit 400, which is respectively located in the heat medium flow path units 100 and independently adjusts the flow rate of the heat medium.

[0155] Moreover, the heat medium supply device of the present invention further includes: a bypass line 600, which allows the heat medium supplied to communicate with the inner flow path S of the heat medium heating unit 300 to bypass.

[0156] The heat medium flow path units 100 are components that are respectively connected to the wall bodies of the process chamber 10 that are distinguished from each other to supply the heat medium, and there are a plurality of them corresponding to each wall body.

[0157] The heat medium heating unit 300 is a component that forms a part of the heat medium flow path unit 100 and independently heats the heat medium supplied through the heat medium flow path unit 100, and can adopt various structures.

[0158] Among them, the heat medium heating unit 300 is a component that forms a part of the heat medium flow path unit 100, and there are multiple ones corresponding to multiple heat medium flow path units 100.

[0159] For example, the heat medium heating unit 300 includes: a heating flow path unit 500, with a flow path S for the heat medium to flow formed inside; a heater 310, which is arranged in the heating flow path unit 500 to heat the heat medium.

[0160] Moreover, the heat medium heating unit 300 further includes: a flow rate reducing component 320, which is arranged in the flow path S to reduce the flow rate of the heat medium.

[0161] Moreover, the heat medium heating unit 300 further includes: a temperature sensor 330, which is used to measure the temperature of the flow path S.

[0162] The heating flow path unit 500 is a component with a flow path S for the heat medium to flow formed inside, and can adopt various structures.

[0163] That is, a flow path S is formed inside the heating flow path unit 500 to form a part of the heat medium transfer path formed through the heat medium flow path unit 100, guide the movement of the heat medium, and transfer the heat based on the heater 310 to the heat medium.

[0164] Among them, the heating flow path unit 500 forms the flow path S to be longer than the straight line length of the heat medium heating unit 300, so as to increase the heat transfer time and heat exchange area to the heat medium based on the heater 310.

[0165] For example, in the heating flow path unit 500, the flow path S is formed in a spiral shape in the length direction. As another example, the flow path S guides the movement multiple times between one end and the other end of the heat medium.

[0166] As an example, the heating flow path unit 500 Figure 4 As shown, includes: a first flow path component 510 and a second flow path component 520, which form a part of the flow path S inside by being combined with each other; a cover component 530, which surrounds the outside of the first flow path component 510 and forms the remaining part of the flow path S between the outside of the first flow path component 510.

[0167] The first flow path component 510 is a component with a second internal flow path S2 formed between it and the second flow path component 520 by being inserted into the second flow path component 520 inside, and can adopt various structures.

[0168] That is, the first flow path component 510 is a component into which at least a part of the second flow path component 520 described later is inserted, and a second internal flow path S2 is formed between the first flow path component 510 and the second flow path component 520. The other end forms a discharge port 511a for discharging the heat medium, and one end forms an insertion port 512a for inserting the second flow path component 520.

[0169] For example, the first flow path component 510 includes: a first flange 511, the other end of which forms a discharge port 511a for discharging the heat medium; and a first extension pipe portion 512 that extends from the first flange 511 toward one end side, and one end of which forms an insertion port 512a for inserting at least a part of the second flow path component 520.

[0170] The first flange 511 is a component whose other end forms a discharge port 511a for discharging the heat medium and is connected to the aforementioned heat medium flow path portion 100.

[0171] Among them, the discharge port 511a communicates with the heat medium flow path portion 100 connected to the first flange 511, and communicates with a second communication hole 512b described later to communicate with a third internal flow path S3 formed between the cover portion 530 and the first flow path component 510.

[0172] Among them, the discharge port 511a Figure 5 As shown, as the first extension pipe portion 512 is isolated from the first flange 511, it is not directly connected to the second internal flow path S2 and the first internal flow path S1 formed by inserting the second flow path component 520 into the first extension pipe portion 512, and they are separated from each other.

[0173] The first extension pipe portion 512 is a component that extends from the first flange 511 toward one end side, and one end of which forms an insertion port 512a for inserting at least a part of the second extension pipe portion 522 of the second flow path component 520 described later.

[0174] Among them, as at least a part of the second flow path component 520 is inserted into the first extension pipe portion 512, a second internal flow path S2 is formed between the first extension pipe portion 512 and the second flow path component 520. Among them, the second internal flow path S2 can communicate with the first internal flow path S1 and the third internal flow path S3 described later. Therefore, the total length of the flow path S of the heat medium can be increased, and the heat exchange contact area and time of the heat medium can be increased.

[0175] Among them, in the first extension pipe portion 512, on the outer peripheral surface of the other end side, that is, on the outer peripheral surface adjacent to the first flange 511, a plurality of second communication holes 512b for communicating with the discharge port 511a are formed. Accordingly, the third internal flow path S3 and the discharge port 511a are communicated, and the heat medium that has passed through the flow path S is guided to move to the heat medium flow path portion 100 through the discharge port 511a.

[0176] In addition, the interior of the first extension pipe portion 512 is formed separately from the discharge port 511a formed in the first flange 511, so that the heat medium guided through the second flow path member 520 and moving through the first internal flow path S1 does not directly move to the discharge port 511a side but moves to the discharge port 511a through the second internal flow path S2 and the third internal flow path S3.

[0177] The second flow path member 520 is a member at least a part of which is inserted into the first flow path member 520 and in which the first internal flow path S1 is formed, and various structures can be adopted.

[0178] That is, the second flow path member 520 is a member that forms the first internal flow path S1 and at least a part of which is inserted into the first flow path member 510 through the insertion port 512a, and a second internal flow path S2 communicating with the first internal flow path S1 is formed between the outer surface and the inner surface of the first flow path member 510.

[0179] For example, the second flow path member 520 may include: a second flange 521 having an inlet port 521a for introducing a heat medium formed at one end; a second extension pipe portion 522 extending from the second flange 521 toward the other end side and having the first internal flow path S1 formed therein, and at least a part of which is inserted into the first flow path member 510.

[0180] The second flange 521 is a member having an inlet port 521a for introducing a heat medium formed at one end, and is connected to the heat medium flow path portion 100 to introduce the heat medium into the flow path S through the inlet port 521a.

[0181] The second extension pipe portion 522 is a member formed by extending from the second flange 521 toward the first flow path member 510 side and having the first internal flow path S1 communicating with the inlet port 521a formed therein to allow the heat medium to move.

[0182] Among them, at least a part of the second extension pipe portion 522 is inserted into the first extension pipe portion 512 through the insertion port 512a, so that a second internal flow path S2 is formed between the second extension pipe portion 522 and the first extension pipe portion 510.

[0183] Therefore, the heat medium introduced through the inlet port 521a moves along the first internal flow path S1, passes through the first communication hole 522a described later, and moves along the second internal flow path S2.

[0184] In addition, the second extension pipe portion 522 Figure 5 As shown, a plugging structure with the end on the first flow path member 510 side closed can be adopted. As another example, while adopting an open structure, it is in contact with the inside of the first extension pipe portion 512 and closed. In this case, in order to connect the first internal flow path S1 and the second internal flow path S2, a plurality of first communication holes 522a are formed on the outer peripheral surface of the other end side.

[0185] Further, as another example, the second extension pipe portion 522 has a structure in which the first communication hole 522a is omitted and the end on the side of the first flow path member 510 is open, so that an open state is maintained inside the first extension pipe portion 512, and the second internal flow path S2 and the first internal flow path S1 communicate with each other.

[0186] The cover member 530 is a member that is provided so as to surround the outer surface of the first flow path member 510 and forms a third internal flow path S3 that communicates with the second internal flow path S2 between the cover member 530 and the outer surface of the first flow path member 510, and various structures can be adopted.

[0187] That is, the cover member 530 is a member that is provided so as to surround the outer surface of the first flow path member 510 between the first flange 511 and the second flange 521 and forms a third internal flow path S3 between the cover member 530 and the outer surface of the first flow path member 510.

[0188] Among them, the third internal flow path S3 Figure 5 As shown, the end of the first extension pipe portion 512 is spaced apart from the second flange 521 at a certain interval and communicates with the second internal flow path S2. As another example, another third communication hole is formed on the outer peripheral surface of the end on the second flange 521 side of the first extension pipe portion 512.

[0189] In addition, the movement of the heat medium based on the aforementioned heating flow path portion 500 is described below.

[0190] The heating flow path portion 500 Figure 4 and Figure 5 As shown, in a state where the heat medium is introduced through the introduction port 521a, it moves along the first internal flow path S1 formed inside the second extension pipe portion 522 to the side of the first flow path member 510, then passes through the first communication hole 522a, moves along the second internal flow path S2 to the side of the second flow path member 520, and then moves to the third internal flow path S3 through the gap between the end of the first extension pipe portion 512 and the second flange 521.

[0191] Moving along the third internal flow path S3, it moves to the side of the first flow path member 510 again, passes through the second communication hole 512b, and is discharged from the heating flow path portion 500 through the discharge port 511a. During this process, it is heated through heat exchange with the heater 310 described later.

[0192] The heater 310 is a member that is provided in the heating flow path portion 500 and heats the heat medium, and various structures can be adopted.

[0193] For example, a plurality of the heaters 310 can be provided on the outer surface of the first flow path member 510. More specifically, a plurality of heaters 310 are provided in the third internal flow path S3 that has a length in the longitudinal direction of the heating flow path portion 500 and is between the outer surface of the first flow path member 510 and the cover member 530.

[0194] That is, the heater 310 is disposed in the flow path S and exposed to the heat medium. Accordingly, when the heat medium moves in the first internal flow path S1 and the second internal flow path S2, heat exchange is indirectly performed, and when it moves in the third internal flow path S3, heat exchange is directly performed.

[0195] In addition, the heater 310 is disposed in the third internal flow path S3 with a flow velocity reducing member 320 described below.

[0196] The flow velocity reducing member 320 is a member that is disposed in the flow path S to reduce the flow velocity of the heat medium. In particular, it is disposed in the flow path S to reduce the flow velocity of the heat medium by physical interference with the heat medium, increase the heat exchange time with the heater 310, and improve the thermal efficiency.

[0197] More specifically, the flow velocity reducing member 320 may include a first flow velocity reducing member 321 that protrudes radially from the outer peripheral surface of the first extension pipe portion 512 and a second flow velocity reducing member 322 that protrudes radially from the outer peripheral surface of the second extension pipe portion 522.

[0198] The first flow velocity reducing member 321 is a member that protrudes radially from the outer peripheral surface of the first extension pipe portion 512, and a plurality of them are provided at intervals along the length direction of the first extension pipe portion 512.

[0199] Among them, a plurality of the first flow velocity reducing members 321 are provided at the same interval or at different intervals.

[0200] In addition, the first flow velocity reducing member 321 is a member that protrudes radially from the first extension pipe portion 512, and a corresponding groove is formed so as to be able to accommodate the aforementioned heater 310.

[0201] The second flow velocity reducing member 322 is a member that protrudes radially from the outer peripheral surface of the second extension pipe portion 522, and a plurality of them are provided at intervals along the length direction of the second extension pipe portion 522.

[0202] Among them, a plurality of the second flow velocity reducing members 322 are provided at the same interval or at different intervals. Figure 6 As shown, it is formed at a position adjacent to the inner peripheral surface of the first extension pipe portion 512 to minimize the passage area of the heat medium, thereby reducing the flow velocity of the heat medium.

[0203] The temperature sensor 330 is a member that measures the temperature of the flow path S, and various structures can be adopted.

[0204] Among them, the temperature sensor 330 is provided through the outer peripheral surface of the cover member 530 so as to be able to measure the temperature of the internal flow path S3. Accordingly, the temperature of the heat medium supply for performing precise temperature control of the heat medium can be measured.

[0205] The flow rate adjusting unit 400 is a component located in a plurality of heat medium flow path units 100 for independently adjusting the flow rate of the heat medium, and various structures can be adopted.

[0206] For example, the flow rate adjusting unit 400 is respectively located in the heat medium flow path units 100 formed by branching from the aforementioned heat medium supply line 210, supplies and isolates the heat medium by opening or isolating the heat medium flow path units 100, and further adjusts the supply flow rate of the heat medium by adjusting the opening degree.

[0207] Among them, the flow rate adjusting unit 400 is provided at the rear end of the heat medium heating unit 300 with respect to the process chamber 10, that is, on the side opposite to the process chamber 10 of the heat medium heating unit 300, and can transfer the heat medium with the adjusted flow rate to the side of the heat medium heating unit 300.

[0208] Accordingly, the flow rate adjusting unit 400 can minimize damage and improve durability by preventing the exposure of the heated heat medium.

[0209] The bypass line 600 is a component for bypassing the heat medium supplied by being communicated with the internal flow path S in the heat medium heating unit 300, and various structures can be adopted.

[0210] For example, the bypass line 600 includes: a plurality of branched bypass lines 610 respectively connected to a plurality of heat medium heating units 300, forming isolation valves and flow rate regulating valves; a main bypass line 620 connected to the plurality of branched bypass lines 610.

[0211] That is, the bypass line 600 forms branched bypass lines 610 and is connected to the heat medium heating unit 300, especially the cover member 530, to be communicated with the third internal flow path S3, and includes a main bypass line 620 connecting the plurality of branched bypass lines 610, and discharges the heat medium bypassed and transferred through the branched bypass lines 610.

[0212] In addition, the branched bypass line 610 has additional isolation valves or flow rate regulating valves, and can adjust whether the heat medium is bypassed and the bypass flow rate. Accordingly, precise flow rate adjustment of the heat medium transferred to the heat medium flow path unit 100 can be performed.

[0213] The above only illustrates some preferred embodiments that the present invention can achieve. As is well known, the scope of the present invention is not limited to the above embodiments, and the technical ideas described above and their fundamental technical ideas of the present invention are all included within the scope of the present invention.

Claims

1. A thermal medium supply device, which is a thermal medium supply device for supplying a thermal medium to a process chamber (10) having a process space for substrate processing formed therein. Characterized in that: It includes: A plurality of thermal medium flow path parts (100), which are respectively connected to the wall bodies of the process chamber (10) that are distinguished from each other to supply the thermal medium; A plurality of thermal medium heating parts (300), which form a part of the thermal medium flow path part (100) and independently heat the thermal medium supplied through the thermal medium flow path part (100).

2. The thermal medium supply device according to claim 1, Characterized in that: It further includes: A thermal medium supply line (210), to which a plurality of the thermal medium flow path parts (100) are branched and connected, and which transfers the thermal medium from the outside to the plurality of thermal medium flow path parts (100).

3. The thermal medium supply device according to claim 1, Characterized in that: The thermal medium heating part (300) includes: a heating flow path part (500) with a flow path (S) for the thermal medium formed therein; a heater (310), which is arranged in the heating flow path part (500) to heat the thermal medium.

4. The thermal medium supply device according to claim 3, Characterized in that: In the heating flow path part (500), the flow path (S) is formed in a spiral shape in the length direction.

5. The thermal medium supply device according to claim 3, Characterized in that: In the heating flow path part (500), the flow path (S) guides the movement of the thermal medium between one end and the other end of the thermal medium multiple times.

6. The thermal medium supply device according to claim 3, Characterized in that: The heating flow path part (500) includes: a first flow path component (510), with a discharge port (511a) for discharging the thermal medium formed at one end and an insertion port (512a) formed at the other end; a second flow path component (520), which forms a first internal flow path (S1) and at least a part of which is inserted into the first flow path component (510) through the insertion port (512a), and forms a second internal flow path (S2) that communicates with the first internal flow path (S1) between the outer surface and the inner surface of the first flow path component (510).

7. The thermal medium supply device according to claim 6, Characterized in that: The heating flow path part (500) includes: a cover component (530), which surrounds the outer surface of the first flow path component (510) and forms a third internal flow path (S3) that communicates with the second internal flow path (S2) between the outer surface of the first flow path component (510).

8. The thermal medium supply device according to claim 6, Characterized in that: The second flow path component (520) includes: a second flange (521), with an inlet port (521a) for introducing the thermal medium formed at one end; a second extension pipe part (522), which extends from the second flange (521) to the other end side, with the first internal flow path (S1) formed therein, and at least a part of which is inserted into the first flow path component (510).

9. The thermal medium supply device according to claim 6, Characterized in that: The first flow path component (510) includes: a first flange (511), with a discharge port (511a) formed at the other end for discharging the heat medium; a first extension pipe portion (512), extending from the first flange (511) towards one end side, and an insertion port (512a) formed at one end for inserting at least a part of the second flow path component (520).

10. The heat medium supply device according to claim 6, wherein, a plurality of the heaters (310) are provided outside the first flow path component (510).

11. The heat medium supply device according to claim 3, wherein, the heater (310) is provided to the flow path (S).

12. The heat medium supply device according to claim 3, wherein, the heat medium heating unit (300) further includes: a flow velocity reducing component (320), provided in the flow path (S) to reduce the flow velocity of the heat medium.

13. The heat medium supply device according to claim 1, wherein, it further includes: a flow rate adjusting unit (400), respectively located in the heat medium flow path unit (100) to independently adjust the flow rate of the heat medium.

14. The heat medium supply device according to claim 13, wherein, the flow rate adjusting unit (400) is provided on the opposite side of the process chamber (10) of the heat medium heating unit (300) to transfer the heat medium to the heat medium heating unit (300) side.

15. The heat medium supply device according to claim 3, wherein, it further includes: a bypass line (600), for bypassing the heat medium supplied by being communicated with the flow path (S) in the heat medium heating unit (300).

16. A substrate processing device, wherein, it includes: a process chamber (10), with a processing space for substrate processing formed inside; a plurality of heat medium flow path units (100), respectively connected to the wall bodies of the process chamber (10) which are distinguished from each other to supply heat medium; a heat medium supply unit (200), adjusting at least one of the flow rate and temperature of the heat medium and independently supplying it to the heat medium flow path unit (100).

17. The substrate processing device according to claim 16, wherein, it includes: a gas injection unit (20), located on the first wall body (11) of the wall body of the process chamber (10), for injecting process gas into the processing space; a gas discharge unit (30), located on the second wall body (12) of the wall body of the process chamber (10) to discharge the gas in the processing space.

18. The substrate processing device according to claim 17, wherein, the heat medium supply unit (200) supplies the heat medium such that the temperature rise amplitude of the first wall body (11) based on the heat medium supply is greater than the temperature rise amplitude of the remaining wall bodies other than the first wall body (11).

19. The substrate processing device according to claim 17, wherein, The heat medium supply unit (200) supplies the heat medium such that the temperature increase rate of the second wall (12) based on the heat medium supply is less than the temperature increase rate of the remaining walls other than the second wall (12).

20. The substrate processing apparatus according to claim 17, wherein, the process chamber (10) is a hexahedron, a plurality of the heat medium flow path parts (100) are respectively connected to the first wall (11) and the second wall (12), and a single heat medium flow path part (100) is connected to each part other than the first wall (11) and the second wall (12).

21. The substrate processing apparatus according to claim 16, wherein, the heat medium flow path part (100) includes an upper heat medium flow path part connected to the upper side of one wall of the process chamber (10) and a lower heat medium flow path part connected to the lower side of the same wall as the upper heat medium flow path part, the heat medium supply unit (200) supplies the heat medium such that the temperature increase rate of the upper side of the wall of the process chamber (10) based on the heat medium supply of the lower heat medium flow path part is greater than the temperature increase rate of the lower side of the wall of the process chamber (10) based on the heat medium supply of the upper heat medium flow path part.

22. The substrate processing apparatus according to claim 16, wherein, the heat medium supply unit (200) supplies the heat medium such that the temperature increase rate of the upper surface (14) of the process chamber (10) based on the heat medium supply is less than the temperature increase rate of the lower surface of the process chamber (10).

23. The substrate processing apparatus according to claim 17, wherein, the heat medium flow path part (100) includes: a supply flow path (110) that transfers the heat medium supplied by the heat medium supply unit (200) to the wall of the process chamber (10); a discharge flow path (120) that transfers the heat medium that has completed heat exchange from the wall of the process chamber (10) to the heat medium supply unit (200), among the remaining heat medium flow path parts (100) other than the heat medium flow path parts (100) connected to the first wall (11) and the second wall (12), the supply flow path (110) is adjacent to the first wall (11) side, and the discharge flow path (120) is adjacent to the second wall (12) side.

24. The substrate processing apparatus according to claim 16, wherein, the heat medium supply unit (200) includes: a heat medium supply line (210) that receives the heat medium from the outside and independently transfers the heat medium to the heat medium flow path parts (100); a heat medium discharge line (220) that receives the heat medium from the heat medium flow path parts (100) and discharges it to the outside.

25. The substrate processing apparatus according to claim 16, wherein, the heat medium supply unit (200) supplies the heat medium such that the temperature of the inner wall of the process chamber (10) is lower than the temperature of the processing space.

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