Surface Treatment Method for Internal Components of Plasma Reaction Chamber and Plasma Equipment

Abstract

Surface treatment method for internal components of a plasma reaction chamber and plasma equipment of the present disclosure, the plasma equipment comprising: a reaction chamber, an air inlet communicating with the reaction chamber, and components located in the reaction chamber; and a plasma radio frequency device. The method includes: when the plasma equipment is officially operating, predicting the predicted passivation layer thickness of the current component according to the initial thickness of the passivation layer of the component, the reference passivation layer thickness increased on the component by a preset single plasma process, and the number of times the current plasma process is executed; wherein the reference passivation layer thickness is determined based on historical test data; and in response to the predicted passivation layer thickness reaching a first preset threshold, passing a passivation layer dissociation gas into the reaction chamber to perform a passivation layer thinning operation so that the thickness of the passivation layer is lower than the first preset threshold. The present disclosure can thin the passivation layer without opening the reaction chamber when the plasma process of the plasma equipment is officially operating, which is beneficial to saving manpower and material resources.

Description

Technical Field

[0001] The present disclosure relates to the technical field of plasma processing, and particularly to a surface treatment method for internal components of a plasma reaction chamber and a plasma device. Background Art

[0002] Plasma devices, especially plasma processing devices including plasma thin film deposition devices, plasma etching devices or plasma stripping devices, are widely used in the field of wafer processing.

[0003] In the related art, during the process of performing a plasma process in a plasma device, the plasma formed by the dissociation of the process gas introduced into the reaction chamber will deposit on the surface of the passivation layer in the chamber, thereby increasing the thickness of the passivation layer. When the increased thickness is relatively large, the relatively thick passivation layer is likely to flake off to form particulate matter. The particulate matter falling onto the wafer surface will cause the processed chip to be scrapped. For example, a fluorinated passivation layer is provided on the surface of the chamber wall of the plasma device reaction chamber and its internal components. However, during the plasma process, a fluorine-containing gas is used to perform plasma cleaning on the reaction chamber. During this process, the fluorine-containing gas will deposit on the surface of the components, resulting in the thickening of the fluorinated passivation layer as the usage time of the plasma device increases. When the accumulated fluorinated passivation layer is relatively thick, the fluorinated passivation layer on the surface of the components is likely to flake off to form particulate matter, and the particulate matter falling onto the wafer surface will cause the processed chip to be scrapped. At this time, it is often necessary to open the reaction chamber of the plasma device and replace the components. The replaced components will be polished and cleaned. Such a practice will cause the plasma device to lose productivity and consume a large amount of manpower and material resources. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present disclosure is to provide a surface treatment method for internal components of a plasma reaction chamber and a plasma device, which can reduce the thickness of the passivation layer without opening the reaction chamber when the plasma process of the plasma device is officially running, which is beneficial to saving manpower and material resources.

[0005] The present disclosure provides a surface treatment method for internal components in a plasma reaction chamber. The plasma device includes: a reaction chamber, an air inlet communicating with the reaction chamber, and components located in the reaction chamber; and a plasma radio frequency device. The method includes: when the plasma device is officially operating, predicting the predicted passivation layer thickness of the current component based on the initial thickness of the passivation layer of the component, the reference passivation layer thickness increased on the component by a single plasma process preset, and the number of plasma process runs currently executed; wherein the reference passivation layer thickness is determined based on historical test data; and in response to the predicted passivation layer thickness reaching a first preset threshold, thinning the passivation layer of the current component by introducing a passivation layer dissociation gas into the reaction chamber, so that the thickness of the passivation layer is lower than the first preset threshold.

[0006] According to some embodiments of the present disclosure, the determination of the reference passivation layer thickness includes the following steps: obtaining the pre-process passivation layer thickness of the component before multiple plasma processes, the post-process passivation layer thickness of the component after multiple plasma processes, and the number of test executions of the plasma process according to the historical test data; determining the reference passivation layer thickness increased on the component by a single plasma process according to the ratio of the difference between the post-process passivation layer thickness and the pre-process passivation layer thickness to the number of test executions; and / or

[0007] The surface treatment method further includes: before the plasma device is officially operating, forming a passivation layer on the surface of the component by introducing a passivation layer gas into the reaction chamber.

[0008] According to some embodiments of the present disclosure, the passivation layer is directly thinned to any non-zero thickness value lower than the first preset threshold; or

[0009] After the passivation layer is thinned to zero, a passivation layer gas is introduced into the air inlet to perform a passivation layer thickening operation on the current component, so that the current component is thickened and refurbished to form a passivation layer with a thickness lower than the first preset threshold.

[0010] According to some embodiments of the present disclosure, directly thinning the passivation layer to a preset target thickness includes the following steps: determining the target thinning thickness of the component according to the predicted passivation layer thickness and the preset target thickness; predicting the predicted thinning duration of the component according to the target thinning thickness and the reference thinning rate of the passivation layer thinning operation on the component passivation layer preset, and introducing the passivation layer dissociation gas for the predicted thinning duration into the reaction chamber, the reference thinning rate is determined based on historical test data; or

[0011] The passivation layer directly increases from zero to a preset target thickness, including the following steps: predicting the predicted thickening duration of the component according to the preset target thickness and the preset thickening operation of the passivation layer of the component, and introducing the passivation layer gas for the predicted thickening duration into the reaction chamber, where the reference thickening rate is determined based on historical test data.

[0012] According to some embodiments of the present disclosure, the determination of the reference thinning rate includes the following steps: obtaining the pre-thinning passivation layer thickness of the component before the passivation layer thinning operation, the post-thinning passivation layer thickness of the component after the passivation layer thinning operation, and the test thinning duration of the passivation layer thinning operation according to the historical test data; determining the reference thinning rate of the passivation layer thinning operation for the passivation layer of the component according to the ratio of the difference between the pre-thinning passivation layer thickness and the post-thinning passivation layer thickness to the test thinning duration; or

[0013] The determination of the reference thickening rate includes the following steps: obtaining the pre-thickening passivation layer thickness of the component before the passivation layer thickening operation, the post-thickening passivation layer thickness of the component after the passivation layer thickening operation, and the test thickening duration of the passivation layer thickening operation according to the historical test data; determining the reference thickening rate of the passivation layer thickening operation for the passivation layer of the component according to the ratio of the difference between the post-thickening passivation layer thickness and the pre-thickening passivation layer thickness to the test thickening duration.

[0014] According to some embodiments of the present disclosure, after the passivation layer is directly thinned to zero, passivation layer gas is introduced into the air inlet to perform a passivation layer thickening operation on the current component to renovate and thicken the passivation layer of the current component; the passivation layer thickening operation further includes: when one of the pressure and the flow rate of the passivation layer gas introduced into the reaction chamber remains unchanged, the other increases or decreases stepwise with the duration of the passivation layer gas introduction; or

[0015] The passivation layer thinning operation further includes: when one of the pressure and the flow rate of the passivation layer dissociation gas introduced into the reaction chamber remains unchanged, the other increases or decreases stepwise with the duration of the passivation layer dissociation gas introduction.

[0016] According to some embodiments of the present disclosure, the component includes a liftable lifting platform;

[0017] The surface treatment method of the internal components of the plasma reaction chamber further includes: driving the lifting platform to lift or lower, so that the distance between the lifting platform and the air inlet increases or decreases stepwise, and performing a pressure increase or decrease operation and / or a flow rate increase or decrease operation at each of the distances.

[0018] According to some embodiments of the present disclosure, the component includes a spraying component communicated with the air inlet and a lifting platform located below the spraying component and capable of lifting;

[0019] The surface treatment method of the internal component of the plasma reaction chamber further includes: when the thickness of the passivation layer of the lifting platform is zero, transmitting a shielding member for shielding the upper surface of the lifting platform to the lifting platform, and continuing to introduce the passivation layer dissociation gas after shielding.

[0020] The present disclosure also provides a plasma device, including: a device main body, including a reaction chamber, an air inlet communicated with the reaction chamber, and a component located in the reaction chamber; a plasma radio frequency device provided in the device main body for forming a radio frequency electric field in the reaction chamber by radio frequency; a dissociation gas delivery unit having a dissociation gas delivery outlet communicated with the air inlet and capable of controlling the conduction / disconnection of the dissociation gas output of the dissociation gas delivery outlet; a plasma gas delivery unit having a plasma gas delivery outlet communicated with the air inlet and capable of controlling the conduction / disconnection of the plasma gas output of the plasma gas delivery outlet; and a control unit connected to the device main body, the plasma gas delivery unit, and the dissociation gas delivery unit for controlling the delivery conditions of the plasma gas delivery unit and the dissociation gas delivery unit according to the thickness of the passivation layer of the component, so as to perform the surface treatment method on the thickness of the passivation layer of the component as described above.

[0021] According to some embodiments of the present disclosure, it further includes: a passivation layer gas delivery unit having a passivation layer gas delivery outlet communicated with the air inlet, and the passivation layer gas delivery unit can control the conduction / disconnection of the passivation layer gas output of the passivation layer gas delivery outlet; the control unit is connected to the passivation layer gas delivery unit for controlling the delivery conditions of the passivation layer gas delivery unit according to the thickness of the passivation layer of the component; and / or

[0022] The component includes a liftable lifting platform located below the air inlet; the plasma device further includes a lift driving assembly, and the control unit is connected to the lift driving assembly for controlling the lifting stroke of the lifting platform by controlling the driving conditions of the lift driving assembly; and / or

[0023] The plasma device further includes an exhaust gas unit provided at the exhaust port of the device main body, and the control unit is connected to the exhaust gas unit for controlling the exhaust conditions of the exhaust gas unit; and / or

[0024] The component parts include a spraying component communicated with the air inlet and a lifting platform which is located below the spraying component and can be lifted; the equipment main body is provided with a transmission port communicated with the reaction chamber and a transmission door for opening / closing the transmission port; the plasma equipment further includes: a transmission assembly for transmitting a shielding member to the lifting platform when the transmission port is opened;

[0025] The control unit is connected to the actuator of the transmission door and the transmission assembly, and is used for controlling the opening / closing condition of the transmission door and the transmission condition of the transmission assembly.

[0026] Advantageous effects:

[0027] (1) For a surface treatment method of the internal components of a plasma reaction chamber and a plasma equipment according to the present disclosure, when the plasma process of the plasma equipment is officially running, the passivation layer can be thinned without opening the reaction chamber, which is beneficial to saving manpower and material resources.

[0028] (2) For a surface treatment method of the internal components of a plasma reaction chamber and a plasma equipment according to the present disclosure, when the plasma process of the plasma equipment is officially running, a passivation layer can be formed / thickened on the component parts without opening the reaction chamber, which is beneficial to saving manpower and material resources. Description of the drawings

[0029] Figure 1 is a schematic structural diagram of the plasma equipment according to an embodiment of the present disclosure.

[0030] Figure 2 is a schematic flow diagram of a surface treatment method of the internal components of a plasma reaction chamber according to an embodiment of the present disclosure.

[0031] Figure 3 is a schematic flow diagram for determining the reference passivation layer thickness according to an embodiment of the present disclosure.

[0032] Figure 4 is a schematic flow diagram for directly thinning the passivation layer of the component parts to a preset target thickness according to an embodiment of the present disclosure.

[0033] Figure 5 is a schematic flow diagram for determining the reference thinning rate according to an embodiment of the present disclosure.

[0034] Figure 6 is a schematic flow diagram for determining the reference thickening rate according to an embodiment of the present disclosure.

[0035] Reference numerals:

[0036] 11. Reaction chamber; 111. Air inlet; 112. Exhaust port; 113. Lifting drive assembly;

[0037] 12. Plasma radio frequency device;

[0038] 13. Components; 131. Lifting platform; 132. Spraying component;

[0039] 14. Dissociation gas delivery unit; 141. Dissociation gas delivery pipeline; 142. Dissociation control valve; 143. Dissociation gas flow detector;

[0040] 15. Plasma gas delivery unit; 151. Plasma gas delivery pipeline; 152. Plasma control valve;

[0041] 16. Exhaust gas unit; 161. Discharge pipeline; 162. Discharge valve; 163. Pressure detector;

[0042] 17. Passivation layer gas delivery unit; 171. Passivation layer gas delivery pipeline; 172. Passivation layer gas control valve; 173. Passivation layer gas flow detector. Detailed implementation manners

[0043] The following illustrates the implementation manners of the present disclosure through specific examples. Those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed in the present disclosure. The present disclosure can also be implemented or applied through different specific implementation manners. Various details in the present disclosure can also be modified or changed according to different viewpoints and application scenarios without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0044] The following takes the attached drawings as a reference and details the embodiments of the present disclosure so that those skilled in the art in the technical field to which the present disclosure belongs can easily implement it. The present disclosure can be embodied in various different forms and is not limited to the embodiments described herein.

[0045] In the description of the present disclosure, the reference terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc., mean that the specific features, structures, materials, or characteristics represented in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials, or characteristics represented can be combined in any one or a group of embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of different embodiments or examples.

[0046] In addition, the terms "first" and "second" are used for illustrative purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the representations of the present disclosure, the meaning of "a group" is two or more, unless otherwise specifically defined.

[0047] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.

[0048] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" with other elements interposed therebetween. In addition, when it is said that a certain device "includes" a certain component, unless there is a particularly contrary record, it does not exclude other components, but means that other components may also be included.

[0049] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first interface and the second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms, unless the context indicates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not preclude the presence, occurrence or addition of one or a group of other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms "or" and "and / or" used herein are to be construed as inclusive, or meaning any one or any combination. Thus, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A, B and C". An exception to this definition occurs only when the combination of elements, functions, steps or operations is mutually exclusive in some way.

[0050] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the statements do not clearly indicate the contrary meaning. The meaning of "including" used in the specification is to embody specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0051] Although not defined differently, including technical terms and scientific terms used herein, all terms have the same meaning as generally understood by those skilled in the technical field to which the present disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted to have meanings consistent with relevant technical literature and the currently presented information. As long as they are not defined, they should not be over-interpreted as ideal or overly formulaic meanings.

[0052] In the related art, during the production process of a plasma device, the plasma formed by the dissociation of the process gas introduced into the reaction chamber is deposited on the surface of the passivation layer in the chamber, thereby increasing the thickness of the passivation layer. When the increased thickness is relatively large, the relatively thick passivation layer is likely to flake off to form particulate matter. The particulate matter falling onto the wafer surface can cause the processed chips to be scrapped. For example, a fluorinated passivation layer, such as an aluminum fluoride passivation layer, is provided on the inner wall of the reaction chamber of the plasma device and the surfaces of the components inside. During the plasma process, the reaction chamber is cleaned by plasma using a fluorine-containing gas. During this process, the fluorine-containing gas is deposited on the surface of the components, resulting in the thickening of the fluorinated passivation layer as the usage time of the plasma device increases. When the accumulated fluorinated passivation layer is relatively thick, the fluorinated passivation layer on the surface of the components is likely to flake off to form particulate matter, and the particulate matter falling onto the wafer surface can cause the processed chips to be scrapped. At this time, it is often necessary to open the reaction chamber of the plasma device and replace the components. The replaced components are polished and cleaned, which will cause the plasma device to lose productivity and consume a large amount of manpower and material resources.

[0053] In view of this, the present disclosure provides a surface treatment method for components inside a plasma reaction chamber and a plasma device, which can thin the passivation layer on the surface of the components without opening the reaction chamber when the plasma device is officially operating, and the operation is simple.

[0054] Figure 1 is a schematic structural diagram of a plasma device according to an embodiment of the present disclosure. Refer to Figure 1 , the plasma device of the present disclosure includes a reaction chamber 11, an air inlet 111 communicating with the reaction chamber 11, components 13 located in the reaction chamber 11, and a plasma radio frequency device 12. Among them, when the radio frequency electric field generated by the plasma radio frequency device 12 acts on the gas, the gas dissociates into a plasma state.

[0055] Figure 2 is a schematic flowchart of a surface treatment method for components inside a plasma reaction chamber according to an embodiment of the present disclosure. Refer to Figure 1 and Figure 2 , a surface treatment method for components inside a plasma reaction chamber according to an embodiment of the present disclosure includes the following steps:

[0056] Step S10: When the plasma device is running officially, predict the predicted passivation layer thickness of the component 13 based on the initial thickness of the passivation layer of the component 13, the reference passivation layer thickness increased on the component 13 by a single plasma process preset, and the number of times the current plasma process is executed. Wherein, the reference passivation layer thickness is determined based on historical test data. For example, the passivation layer can be a fluorinated passivation layer, and the plasma process can be a plasma treatment process using a fluorine-containing gas. For example, a plasma etching process, a cleaning process, or a surface modification process using a fluorine-containing gas, etc. Each time the plasma process will cause the plasma formed by the dissociation of the fluorine-containing gas to deposit on the fluorinated passivation layer, thereby increasing the thickness of the fluorinated passivation layer. However, it can be understood that the passivation layer described in the present disclosure includes but is not limited to this, and can also be a passivation layer of other materials. During the official operation stage of the plasma device, based on the initial thickness of the passivation layer of the component 13, the number of times the plasma process is executed, and the reference passivation layer thickness increased on the component 13 by each plasma process, the predicted passivation layer thickness of the component 13 after multiple official operations of the plasma process can be determined. For example, predicted passivation layer thickness = number of runs * reference passivation layer thickness + initial thickness.

[0057] Optionally, the initial thickness of the passivation layer of the component 13 can be measured actually on the component 13 by opening the reaction chamber 11 before the plasma device runs officially, for example, during the test stage of the plasma device. The reference passivation layer thickness can be determined by applying the plasma process to the plasma device multiple times during the test stage and obtaining the corresponding historical test data.

[0058] Figure 3 is a schematic flowchart of determining the reference passivation layer thickness in an embodiment of the present disclosure. Refer to Figure 1 and Figure 3 , the determination of the reference passivation layer thickness includes the following steps:

[0059] Step S1a: Obtain the pre-process passivation layer thickness of the component 13 before multiple plasma processes are implemented, the post-process passivation layer thickness of the component 13 after multiple plasma processes are implemented, and the number of test implementations of the plasma process according to the historical test data. In other words, the historical test data includes: the pre-process passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 before applying the plasma process to the plasma device multiple times, the post-process passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 after applying the plasma process to the plasma device multiple times, and the number of test implementations of the multiple plasma processes determined statistically.

[0060] Step S2a: Determine the reference passivation layer thickness increased on the component 13 by a single plasma process according to the ratio of the difference between the post-process passivation layer thickness and the pre-process passivation layer thickness to the number of test implementations, that is, reference passivation layer thickness = (post-process passivation layer thickness - pre-process passivation layer thickness) / number of test implementations.

[0061] Step S20: In response to the predicted passivation layer thickness reaching a first preset threshold, introduce a passivation layer dissociation gas into the reaction chamber 11 to perform a passivation layer thinning operation on the current component 13, so that the thickness of the passivation layer is lower than the first preset threshold. In other words, after the passivation layer dissociation gas is introduced into the reaction chamber 11, it will be activated into plasma under the action of the radio frequency electric field of the plasma radio frequency device 12, and the high-energy ions in the plasma and the reduction and replacement action of free radicals are used to thin the fluorinated passivation layer on the surface of the component 13 to below the first preset threshold.

[0062] Thus, during the formal operation of the plasma equipment, without opening the reaction chamber 11, the passivation layer inside the reaction chamber 11 can be thinned, which is conducive to saving manpower and material resources.

[0063] Optionally, the passivation layer dissociation gas includes a mixed gas of an inert gas and hydrogen, or a mixed gas of nitrogen and hydrogen. Among them, the volume flow ratio of the inert gas or nitrogen to hydrogen can be 100:1000 to 2000:100. For example, the passivation layer dissociation gas can be introduced into the reaction chamber 11 in such a way that the volume flow of the inert gas or nitrogen is 100 to 2000 sccm and the volume flow of hydrogen is 100 to 1000 sccm. Among them, the inert gas includes one or more of argon and helium. For the fluorinated passivation layer, the first preset threshold can be set to a value less than or equal to 200 um, more preferably less than or equal to 100 um, mainly because when the fluorinated passivation layer is greater than 200 um, the fluorinated passivation layer on the surface of the component 13 is prone to peeling, and the peeled particles falling on the wafer surface will cause the processed chips to be scrapped.

[0064] Based on the above surface treatment method for the internal components of the plasma reaction chamber, the present disclosure also provides a plasma equipment. Refer to Figure 1 , the plasma equipment includes a device main body, a plasma radio frequency device 12, a dissociation gas delivery unit 14, a plasma gas delivery unit 15, and a control unit.

[0065] Among them, the device main body includes a reaction chamber 11, an air inlet 111 communicated with the reaction chamber 11, and a component 13 located in the reaction chamber 11. The plasma radio frequency device 12 is provided in the device main body to supply radio frequency into the reaction chamber 11 to form a radio frequency electric field.

[0066] The dissociation gas delivery unit 14 has a dissociation gas delivery outlet for communicating with the air inlet 111, and the dissociation gas delivery unit 14 can be controlled to conduct / disconnect the output of the passivation layer dissociation gas at the dissociation gas delivery outlet. Optionally, the dissociation gas delivery unit 14 includes a dissociation gas delivery pipeline 141 and a dissociation control valve 142. The dissociation gas delivery pipeline 141 has the dissociation gas delivery outlet. The dissociation control valve 142 is provided on the dissociation gas delivery pipeline 141 and can be controlled to conduct and disconnect the output of the passivation layer dissociation gas at the dissociation gas delivery outlet.

[0067] The plasma gas delivery unit 15 has a plasma gas delivery outlet for communicating with the air inlet 111, and the plasma gas delivery unit 15 can be controlled to conduct / disconnect the output of the plasma gas at the plasma gas delivery outlet. Optionally, the plasma gas delivery unit 15 includes a plasma gas delivery pipeline 151 and a plasma control valve 152. The plasma gas delivery pipeline 151 has the plasma gas delivery outlet. The plasma control valve 152 is provided on the plasma gas delivery pipeline 151 and can be controlled to conduct and disconnect the output of the plasma gas at the plasma gas delivery outlet.

[0068] The control unit is connected to the device main body, the plasma gas delivery unit 15 and the dissociation gas delivery unit 14, and is used to control the delivery conditions of the plasma gas delivery unit 15 and the dissociation gas delivery unit 14 according to the passivation layer thickness of the components 13 in the device main body, so as to perform the surface treatment method on the passivation layer thickness of the components 13 as described in the above embodiments. For example, the control unit is used to predict the predicted passivation layer thickness of the current component 13 according to the reference passivation layer thickness increased on the component 13 by the preset single plasma process and the number of times the current plasma process runs, and in response to the predicted passivation layer thickness reaching the first preset threshold, control the plasma gas delivery unit 15 to disconnect and the dissociation gas delivery unit 14 to open, so as to introduce the passivation layer dissociation gas into the reaction chamber 11 to perform the passivation layer thinning operation on the current component 13. Optionally, the control unit is connected to the dissociation control valve 142 and is used to control the disconnection / delivery of the passivation layer dissociation gas at the dissociation gas delivery outlet by controlling the disconnection / conductance of the dissociation control valve 142. The control unit is connected to the plasma control valve 152 and is used to control the disconnection / delivery of the plasma gas at the plasma gas delivery outlet by controlling the disconnection / conductance of the plasma control valve 152.

[0069] Thus, when the thickness of the passivation layer of the component 13 is greater than the first preset threshold, which may cause the passivation layer to peel off and affect the plasma process, the plasma gas delivery unit 15 disconnects and stops delivering plasma gas, and the dissociation gas delivery unit 14 opens and starts delivering passivation layer dissociation gas into the reaction chamber 11, so as to thin the passivation layer on the component 13 without opening the reaction chamber 11, which is beneficial to saving a large amount of manpower and material resources.

[0070] Optionally, the air inlet 111 is directly above the center of the component 13. The passivation layer thinning operation further includes that, with the flow rate of the passivation layer dissociation gas being constant, the pressure in the reaction chamber 11 increases / decreases stepwise with the passing time. More specifically, at each pressure gradient, the pressure condition is maintained for the same duration. And the stepwise increase / decrease is an equally spaced successive increase / decrease, and each stepwise increase / decrease operation constitutes a pressure cycling step, and the passivation layer thinning operation has multiple pressure cycling steps. For example, at each pressure cycling step, the pressure increases successively in the directions of 100 mT, 300 mT, 500 mT, 700 mT, 900 mT and 1100 mT, and is maintained for 30 s at each pressure, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. This is mainly because when the pressure in the reaction chamber 11 changes, it can promote the flow of the passivation layer dissociation gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 is evenly distributed from the center to the edge, and further the passivation layer in different regions of the surface of the component 13 can be evenly thinned, improving the thinning uniformity.

[0071] Optionally, the device body is further provided with an exhaust port 112 communicating with the reaction chamber 11, and the plasma device further includes an exhaust gas unit 16. The exhaust gas unit 16 is disposed at the exhaust port 112, and the control unit is connected to the exhaust gas unit 16 for controlling the exhaust condition of the exhaust gas unit 16 to implement the above-described pressure condition on the pressure in the reaction chamber 11. For example, the exhaust gas unit 16 includes an exhaust pipeline 161, an exhaust valve 162, and a pressure detector 163. The exhaust pipeline 161 communicates with the exhaust port 112 for discharging gas to relieve pressure. The exhaust valve 162 is disposed at the exhaust port 112. The pressure detector 163, such as a pressure gauge, is disposed on the exhaust pipeline 161 for detecting the pressure of the exhaust pipeline 161 to determine the pressure in the reaction chamber 11. The control unit is connected to the exhaust valve 162 and the pressure detector 163 for controlling the opening degree of the exhaust valve 162 according to the pressure detection result of the pressure detector 163 to control the pressure in the reaction chamber 11. For example, when the detection result of the pressure detector 163 is relatively large, the opening degree of the exhaust valve 162 is controlled to become larger, thereby correspondingly reducing the pressure in the reaction chamber 11. When the detection result of the pressure detector 163 is relatively small, the opening degree of the exhaust valve 162 is controlled to become smaller, thereby correspondingly increasing the pressure in the reaction chamber 11.

[0072] Optionally, the inlet port 111 is directly above the center of the component 13. The passivation layer thinning operation further includes that, with the pressure in the reaction chamber 11 remaining unchanged, the flow rate of the passivation layer dissociation gas increases / decreases stepwise with the passing time. More specifically, at each flow rate gradient, the flow rate condition is maintained for the same duration. And the stepwise increase / decrease is an equally spaced successive increase / decrease, and each stepwise increase / decrease operation constitutes a flow rate cycle step, and the passivation layer thinning operation has multiple flow rate cycle steps. When the flow rate in the reaction chamber 11 changes, it can promote the flow of the passivation layer dissociation gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 from the center to the edge is evenly distributed, and further the passivation layer in different regions of the surface of the component 13 from the center to the edge can be evenly thinned, improving the thinning uniformity.

[0073] Optionally, the dissociation gas delivery unit 14 further includes a dissociation gas flow detector 143, such as a first flow meter, which is provided on the dissociation gas delivery pipeline 141. The control unit is connected to the dissociation control valve 142 and the dissociation gas flow detector 143, and is configured to control the opening degree of the dissociation control valve 142 according to the flow detection result of the dissociation gas flow detector 143, so as to control the flow rate of the passivation layer dissociation gas introduced. For example, when the detection result of the dissociation gas flow detector 143 is large, the opening degree of the dissociation control valve 142 is controlled to become smaller, thereby correspondingly reducing the flow rate of the passivation layer dissociation gas introduced. When the detection result of the dissociation gas flow detector 143 is small, the opening degree of the dissociation control valve 142 is controlled to become larger, thereby correspondingly increasing the flow rate of the passivation layer dissociation gas introduced.

[0074] Optionally, the component 13 includes a lift platform 131 that is located below the air inlet 111 and can be lifted. The passivation layer thinning operation further includes driving the lift platform 131 to lift and lower, so that the distance between the lift platform 131 and the air inlet 111 increases / decreases step by step, and the aforementioned pressure increase / decrease operation and / or flow rate increase / decrease operation are performed at each such distance. More specifically, at each distance gradient, the distance condition is maintained for the same duration. And the step-by-step increase / decrease is an equal-distance sequential increase / decrease, and each step-by-step increase / decrease operation constitutes a distance cycle step, and the passivation layer thinning operation has multiple distance cycle steps. For example, in each distance cycle step, the distance increases sequentially in the direction of 15 mm, 20 mm, 25 mm to 30 mm, and is maintained for 30 s at each distance, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. Exemplarily, the lift platform 131 can be a temperature-controlled platform for supporting the wafer and controlling the temperature of the wafer during processing, such as a heating platform, and the heating platform can move in the up and down direction under the drive of the lift drive assembly 113 to perform lifting. The reason for the above setting is that when the lift platform 131 in the reaction chamber 11 is lifted and lowered, it can promote the flow of the gas in the reaction chamber 11 and is also beneficial to improving the thinning uniformity of the lift platform 131.

[0075] Optionally, the device body further includes a lifting drive assembly 113. The lifting drive assembly 113 is connected to the lifting platform 131 and is used to control the lifting of the lifting platform 131. The control unit is connected to the lifting drive assembly 113 and is used to change the distance between the lifting platform 131 and the air inlet 111 by controlling the lifting stroke of the lifting drive assembly 113 as described in the above embodiments. Exemplarily, the lifting drive assembly 113 includes a motor and a lead screw component. The motor is connected to the lead screw component, and the lead screw component is connected to the lifting platform 131 and is used to drive the lifting platform 131 to lift under the drive of the motor. The control unit is connected to the motor and is used to control the lifting stroke by controlling the number of rotation turns of the motor.

[0076] Optionally, in some examples, the passivation layer is directly thinned to any non-zero thickness value lower than the first preset threshold. Thus, when the passivation layer is directly thinned to any non-zero thickness value lower than the first preset threshold, the passivation layer of the component 13 after thinning can still play a role, and the original passivation layer on the component 13 can be reused, which is beneficial to saving materials.

[0077] Figure 4 It is a schematic flowchart of directly thinning the passivation layer of the component in the embodiment of the present disclosure. Refer to Figure 4 , directly thinning the passivation layer to a preset target thickness includes the following steps:

[0078] Step S21: Determine the target thinning thickness of the component 13 according to the predicted passivation layer thickness and the preset target thickness. For example, the target thinning thickness = (predicted passivation layer thickness - preset target thickness).

[0079] Step S22: Predict the predicted thinning duration of the passivation layer of the component 13 according to the target thinning thickness and the reference thinning rate of the passivation layer thinning operation preset for the component 13. The reference thinning rate is determined based on historical test data. For example, the predicted thinning duration = target thinning thickness / reference thinning rate, and a passivation layer dissociation gas for the predicted thinning duration is introduced into the reaction chamber 11.

[0080] Thus, the present disclosure can control the thinning thickness of the passivation layer by controlling the predicted thinning duration, that is, the introduction duration of the passivation layer dissociation gas, so that the passivation layer after thinning can reach the preset target thickness.

[0081] Optionally, the control unit is connected to the dissociation gas delivery unit 14, and is configured to determine a target thinning thickness of the component 13 according to the predicted passivation layer thickness and a preset target thickness, and predict a predicted thinning duration of the component 13 according to the target thinning thickness and a preset passivation layer thinning operation for the reference thinning rate of the passivation layer of the component 13, and control a delivery duration of the dissociation gas delivery unit 14 according to the predicted thinning duration, so that the passivation layer can reach the target thickness after thinning. For example, the control unit is connected to the dissociation control valve 142, and is configured to control an opening duration of the dissociation control valve 142 according to the predicted thinning duration, so that the passivation layer can reach the target thickness after thinning.

[0082] Optionally, the reference thinning rate can be determined by applying the passivation layer thinning operation to the plasma device during a test phase of the plasma device and obtaining corresponding historical test data.

[0083] Figure 5 is a schematic flow chart of determining the reference thinning rate of an embodiment of the present disclosure. Refer to Figure 5 , the determination of the reference thinning rate includes the following steps:

[0084] Step S1b: Obtain a pre-thinning passivation layer thickness of the component 13 before the passivation layer thinning operation, a post-thinning passivation layer thickness of the component 13 after the passivation layer thinning operation, and a test thinning duration of the passivation layer thinning operation according to the historical test data. In other words, the historical test data includes: the pre-thinning passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 before applying the passivation layer thinning operation to the plasma device, the post-thinning passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 after applying the passivation layer thinning operation to the plasma device, and the test thinning duration (the passivation layer dissociation gas introduction duration) of the passivation layer thinning operation determined by statistical timing.

[0085] Step S2b: Determine the reference thinning rate of the passivation layer of the component 13 for the passivation layer thinning operation according to a ratio of a difference between the pre-thinning passivation layer thickness and the post-thinning passivation layer thickness to the test thinning duration. For example, the reference thinning rate = (pre-thinning passivation layer thickness - post-thinning passivation layer thickness) / test thinning duration.

[0086] Optionally, when it is required to thin the passivation layer to zero, according to the above reference thinning rate, the predicted thinning duration = predicted passivation layer thickness / reference thinning rate. Therefore, the present disclosure only needs to ensure that the predicted thinning duration is greater than or equal to the predicted passivation layer thickness / reference thinning rate to ensure that the passivation layer can be thinned to zero. The control unit is connected to the dissociation gas delivery unit 14 and is configured to make the thickness of the passivation layer after thinning zero by controlling the delivery duration of the dissociation gas delivery unit 14 to be greater than or equal to the predicted passivation layer thickness / reference thinning rate. For example, the control unit is connected to the dissociation control valve 142 and is configured to make the thickness of the passivation layer after thinning zero by controlling the opening duration of the dissociation control valve 142 to be greater than or equal to the predicted passivation layer thickness / reference thinning rate.

[0087] Optionally, referring to Figure 1 , the component 13 includes a spraying component 132 communicating with the air inlet 111 and a lifting platform 131 located below the spraying component 132 and capable of lifting. Exemplarily, the spraying component 132 includes a plurality of spray heads, and the plurality of spray heads are arranged at intervals in the transverse direction. The surface treatment method of the internal components of the plasma reaction chamber further includes: when the thickness of the passivation layer on the lifting platform 131 is zero, transmitting a shielding member for shielding the upper surface of the lifting platform 131 to the lifting platform 131 and continuing to introduce the passivation layer dissociation gas after shielding. Optionally, the plasma device is provided with a transmission port communicating with the reaction chamber 11, and a transmission door for opening / closing the transmission port is provided at the transmission port, and the transmission port can be used to transmit wafers / shielding members to the lifting platform 131 of the reaction chamber 11.

[0088] Optionally, the device body is provided with a transmission port communicating with the reaction chamber 11 and a transmission door for opening / closing the transmission port. The plasma device further includes a transmission component, such as a robot arm. The transmission component is configured to transmit the shielding member above the lifting platform 131 when the transmission port is opened. For example, the control unit is connected to the actuator of the transmission door and the transmission component, and is configured to control the opening / closing condition of the transmission door and the transmission condition of the transmission component to implement the above-described transmission of the shielding member. For example, the control unit is configured to control the transmission door to open according to the delivery duration of the dissociation gas delivery unit 14 being greater than the predicted passivation layer thickness / reference thinning rate, and control the transmission component to transmit the shielding member through the opened transmission port above the lifting platform 131 and shield the lifting platform 131.

[0089] It is understandable that during the process of introducing the passivation layer dissociation gas into the reaction chamber 11, since the passivation layer dissociation gas is ejected directly towards the lifting platform 131 after being ejected from the spraying component 132, and during the process of removing the passivation layer material on the surface of the lifting platform 131 to zero, the materials (AlF x and Al) on the surface of the lifting platform 131 will be sputtered onto the spraying component 132 due to the bombardment effect. Therefore, after the thickness of the passivation layer on the lifting platform 131 reaches zero, a shielding member can be transferred into the reaction chamber 11 to shield the upper surface of the lifting platform 131, and the passivation layer dissociation gas can continue to be introduced, so that the fluorinated passivation layer material sputtered onto the spraying component 132 can finally be dissociated completely, and the lifting platform 131 will not be overly thinned.

[0090] Optionally, the shielding member is made of a corrosion-resistant material, such as a ceramic plate (Al2O3, AlN ceramic plate). Thus, the shielding member is difficult to be dissociated by the passivation layer dissociation gas, and has a good shielding and protection effect on the lifting platform 131.

[0091] In some other examples, after the passivation layer is thinned to zero, a passivation layer gas is introduced into the air inlet 111 to perform an operation of thickening the passivation layer of the current component 13, so that the current component 13 is thickened and refurbished to form a passivation layer with a thickness lower than the first preset threshold. Optionally, the passivation layer gas includes fluorine-containing gases such as NF3, and the volume flow rate of the fluorine-containing gas can be 200 sccm. When the passivation layer gas is introduced into the reaction chamber 11, it will be activated into plasma under the action of the radio frequency electric field of the plasma radio frequency device 12, and the plasma is used to deposit on the passivation layer surface of the component 13, so that the passivation layer of the component 13 is thickened without opening the reaction chamber 11.

[0092] Thus, a new passivation layer is formed on the surface of the component 13, and the passivation layer material formed by refurbishment ages slowly, and has better stability and reliability.

[0093] Meanwhile, it is worth mentioning that for the passivation layer of the component 13 of the present disclosure, the plasma device can be in an initial state after assembly, and the component 13 already has a passivation layer on its surface, or in an initial state after assembly, the component 13 does not have a passivation layer formed on its surface. Therefore, before the reaction chamber 11 is opened and the plasma device operates, a passivation layer can also be formed on the surface of the component by introducing the passivation layer gas into the reaction chamber 11, and then the plasma process can be performed using the plasma device.

[0094] Optionally, the plasma device further includes a passivation layer gas delivery unit 17. The passivation layer gas delivery unit 17 has a passivation layer gas delivery outlet communicating with the air inlet 111, and the passivation layer gas delivery unit 17 can be controlled to conduct / disconnect the passivation layer gas output of the passivation layer gas delivery outlet. The control unit is connected to the passivation layer gas delivery unit 17 and is configured to control the delivery of the passivation layer gas delivery unit 17 according to the passivation layer thickness of the components 13 in the device body. For example, the control unit is configured to control the dissociation gas delivery unit 14 to disconnect according to the delivery duration of the dissociation gas delivery unit 14 being greater than or equal to the predicted passivation layer thickness / reference thinning rate, and control the passivation layer gas delivery unit 17 to open to introduce passivation layer gas into the air inlet 111 to perform the passivation layer thickening operation on the current component 13.

[0095] Optionally, the passivation layer gas delivery unit 17 includes a passivation layer gas delivery pipeline 171 and a passivation layer gas control valve 172. The passivation layer gas delivery pipeline 171 has the passivation layer gas delivery outlet. The passivation layer gas control valve 172 is provided on the passivation layer gas delivery pipeline 171 and can be controlled to conduct and disconnect the passivation layer gas output of the passivation layer gas delivery outlet. The control unit is connected to the dissociation control valve 142 and the passivation layer gas control valve 172, and is configured to control the dissociation control valve 142 to disconnect according to the opening duration of the dissociation control valve 142 being greater than or equal to the predicted passivation layer thickness / reference thinning rate, and control the passivation layer gas control valve 172 to open to introduce passivation layer gas into the air inlet 111 to perform the passivation layer thickening operation on the current component 13.

[0096] Optionally, after the passivation layer is thinned to zero, the passivation layer directly thickens from zero to a preset target thickness, including the following steps: predicting the predicted thickening duration of the component 13 according to the preset target thickness and the reference thickening rate of the passivation layer of the component 13 in the preset passivation layer thickening operation, and introducing the passivation layer gas for the predicted thickening duration into the reaction chamber 11, and the reference thickening rate is determined based on historical test data.

[0097] Thus, the present disclosure can control the thickness of the thickened passivation layer by controlling the predicted thickening duration, that is, the introduction duration of the passivation layer gas, so that the passivation layer can reach the target thickness after thickening from zero.

[0098] Optionally, the control unit is connected to the passivation layer gas delivery unit 17, and is configured to predict the predicted thickening duration of the component 13 based on the preset target thickness and the preset passivation layer thickening operation for the passivation layer of the component 13. For example, the predicted thickening duration = the preset target thickness / the reference thickening rate, and control the delivery duration of the passivation layer gas delivery unit 17 according to the predicted thickening duration. For example, the control unit controls the opening duration of the passivation layer gas control valve 172 according to the predicted thickening duration, so that the passivation layer after thickening can reach the target thickness.

[0099] Optionally, the reference thickening rate can be determined by applying the passivation layer thickening operation to the plasma device during the test phase of the plasma device and obtaining the corresponding historical test data.

[0100] Figure 6 is a schematic flow chart of determining the reference thickening rate of the embodiments of the present disclosure. Refer to Figure 6 , the determination of the reference thickening rate includes the following steps:

[0101] Step S1c: Obtain the pre-thickening passivation layer thickness of the component 13 before the passivation layer thickening operation, the post-thickening passivation layer thickness of the component 13 after the passivation layer thickening operation, and the test thickening duration of the passivation layer thickening operation according to the historical test data. In other words, the historical test data includes: the pre-thickening passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 before applying the passivation layer thickening operation to the plasma device, the post-thickening passivation layer thickness of the component 13 determined by actually measuring by opening the reaction chamber 11 after applying the passivation layer thickening operation to the plasma device, and the test thickening duration (the passivation layer gas introduction duration) of the passivation layer thickening operation determined by statistical timing.

[0102] Step S2c: Determine the reference thickening rate of the passivation layer thickening operation for the passivation layer of the component 13 according to the ratio of the difference between the pre-thickening passivation layer thickness and the post-thickening passivation layer thickness to the test thickening duration. For example, the reference thickening rate = (post-thickening passivation layer thickness - pre-thickening passivation layer thickness) / test thickening duration.

[0103] Optionally, the air inlet 111 is located directly above the center of the component 13. The passivation layer thickening operation further includes that, with the flow rate of the passivation layer gas remaining unchanged, the pressure in the reaction chamber 11 increases / decreases stepwise with the passing time. More specifically, at each pressure gradient, the pressure condition is maintained for the same duration. And the stepwise increase / decrease is an equal-spacing sequential increase / decrease, and each stepwise increase / decrease operation constitutes a pressure cycle step, and the passivation layer thickening operation has multiple pressure cycle steps. For example, in each pressure cycle step, the pressure increases sequentially in the direction of 1000 mT, 1200 mT, 1400 mT, 1600 mT, 1800 mT, 2000 mT, and is maintained for 30 s at each pressure, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. This is mainly because when the pressure in the reaction chamber 11 changes, it can promote the flow of the gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 from the center to the edge is evenly distributed, and then the passivation layer in different regions of the surface of the component 13 from the center to the edge can be thickened evenly, improving the thickening uniformity. At the same time, it can be understood that when the passivation layer gas is introduced, the pressure condition in the reaction chamber 11 can also be achieved by controlling the exhaust condition of the exhaust gas unit 16 by the control unit.

[0104] Optionally, the air inlet 111 is located directly above the center of the component 13. The passivation layer thickening operation further includes that, with the introduction pressure of the passivation layer gas remaining unchanged, the flow rate of the passivation layer gas increases / decreases stepwise with the passing time. More specifically, at each flow rate gradient, the flow rate condition is maintained for the same duration. And the stepwise increase / decrease is an equal-spacing sequential increase / decrease, and each stepwise increase / decrease operation constitutes a flow rate cycle step, and the passivation layer thickening operation has multiple flow rate cycle steps. For example, in each flow rate cycle step, the flow rate increases sequentially in the direction of 200 sccm, 300 sccm, 400 sccm, 500 sccm, 600 sccm, 700 sccm, 800 sccm, 900 sccm, and is maintained for 30 s at each flow rate, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. This is mainly because when the flow rate of the passivation layer gas changes, it can promote the flow of the passivation layer gas in the reaction chamber 11, especially the horizontal movement, so that the plasma density in different regions of the horizontal surface of the component 13 from the center to the edge is evenly distributed, and then the passivation layer in different regions of the surface of the component 13 from the center to the edge can be thickened evenly.

[0105] Optionally, refer toFigure 1 The passivation layer gas delivery unit 17 further includes a passivation layer gas flow rate detector 173, such as a second flowmeter, and the passivation layer gas flow rate detector 173 is provided on the passivation layer gas delivery pipeline 171. The control unit is connected to the passivation layer gas control valve 172 and the passivation layer gas flow rate detector 173, and is configured to control the opening degree of the passivation layer gas control valve 172 according to the flow rate detection result of the passivation layer gas flow rate detector 173, so as to control the inlet flow rate of the passivation layer gas. For example, when the detection result of the passivation layer gas flow rate detector 173 is large, the opening degree of the passivation layer gas control valve 172 is controlled to become smaller, thereby correspondingly reducing the inlet flow rate of the passivation layer gas. When the detection result of the passivation layer gas flow rate detector 173 is small, the opening degree of the passivation layer gas control valve 172 is controlled to become larger, thereby correspondingly increasing the inlet flow rate of the passivation layer gas.

[0106] Optionally, the component 13 includes a lift platform 131 that is located below the air inlet 111 and can be lifted. The passivation layer thickening operation further includes driving the lift platform 131 to lift or lower, so that the distance between the lift platform 131 and the air inlet 111 increases or decreases step by step, and the aforementioned pressure increase / decrease operation and / or flow rate increase / decrease operation is performed at each such distance. More specifically, at each such distance gradient, the distance condition is maintained for the same duration. And the step-by-step increase / decrease is an equal-distance sequential increase / decrease, and each step-by-step increase / decrease operation constitutes a distance cycle step, and the passivation layer thickening operation has multiple distance cycle steps. For example, in each such distance cycle step, the distance increases sequentially in the direction of 15 mm, 20 mm, 25 mm to 30 mm, and is maintained for 30 s at each distance, and then this process is repeated in the next cycle, and the cycle is repeated 10 times. When the lift platform 131 in the reaction chamber 11 is lifted or lowered, it can promote the flow of the gas in the reaction chamber 11, and is also beneficial to improving the thickness uniformity of the lift platform 131. At the same time, it can be understood that when the lift platform 131 is lifted or lowered, the distance condition between the lift platform 131 and the air inlet 111 can also be realized by the control unit controlling the lift stroke of the lift drive assembly 113.

[0107] The above embodiments merely illustrate the principles and effects of the present disclosure, rather than limiting the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A surface treatment method for internal components of a plasma reaction chamber, characterized in that, The plasma device includes: a reaction chamber, an air inlet communicating with the reaction chamber, and components located in the reaction chamber; and a plasma radio frequency device; including: When the plasma device is officially operating, predicting the predicted passivation layer thickness of the current component based on the initial thickness of the passivation layer of the component, the reference passivation layer thickness increased on the component by a preset single plasma process, and the number of times the current plasma process is executed; wherein, the reference passivation layer thickness is determined based on historical test data; and In response to the predicted passivation layer thickness reaching a first preset threshold, thinning the passivation layer of the current component by introducing a passivation layer dissociation gas into the reaction chamber, so that the thickness of the passivation layer is lower than the first preset threshold; wherein, the passivation layer thinning operation further includes: when one of the pressure in the reaction chamber and the flow rate of the passivation layer dissociation gas introduced is unchanged, the other increases / decreases step by step with the duration of the passivation layer dissociation gas introduced, and each step-by-step increase / decrease operation constitutes a cycle step.

2. The surface treatment method of the internal component of the plasma reaction chamber according to claim 1, wherein The determination of the reference passivation layer thickness includes the following steps: obtaining the pre-process passivation layer thickness of the component before multiple plasma processes, the post-process passivation layer thickness of the component after multiple plasma processes, and the number of test executions of the plasma process according to the historical test data; determining the reference passivation layer thickness increased on the component by a single plasma process according to the ratio of the difference between the post-process passivation layer thickness and the pre-process passivation layer thickness to the number of test executions; and / or The surface treatment method further includes: before the plasma device is officially operating, forming a passivation layer on the surface of the component by introducing a passivation layer gas into the reaction chamber.

3. The surface treatment method of the internal component of the plasma reaction chamber according to claim 1, wherein, The passivation layer is directly thinned to any non-zero thickness value lower than the first preset threshold; Or After the passivation layer is thinned to zero, introducing a passivation layer gas into the air inlet to perform a passivation layer thickening operation on the current component, so that the current component is thickened and refurbished to form a passivation layer with a thickness lower than the first preset threshold.

4. The surface treatment method of the internal component of the plasma reaction chamber according to claim 3, wherein, The passivation layer is directly thinned to a preset target thickness, including the following steps: determining the target thinning thickness of the component according to the predicted passivation layer thickness and the preset target thickness; predicting the predicted thinning duration of the component according to the target thinning thickness and the reference thinning rate of the passivation layer thinning operation on the component passivation layer, and introducing the passivation layer dissociation gas for the predicted thinning duration into the reaction chamber, the reference thinning rate is determined based on historical test data; or The passivation layer is directly thickened from zero to a preset target thickness, including the following steps: predicting the predicted thickening duration of the component according to the preset target thickness and the reference thickening rate of the passivation layer thickening operation on the component passivation layer, and introducing the passivation layer gas for the predicted thickening duration into the reaction chamber, the reference thickening rate is determined based on historical test data.

5. The surface treatment method of the internal component in the plasma reaction chamber according to claim 4, characterized in that, The determination of the reference thinning rate includes the following steps: obtaining the pre-thinning passivation layer thickness of the component before the passivation layer thinning operation, the post-thinning passivation layer thickness of the component after the passivation layer thinning operation, and the test thinning duration of the passivation layer thinning operation according to the historical test data; determining the reference thinning rate of the passivation layer of the component for the passivation layer thinning operation according to the ratio of the difference between the pre-thinning passivation layer thickness and the post-thinning passivation layer thickness to the test thinning duration; or The determination of the reference thickening rate includes the following steps: obtaining the pre-thickening passivation layer thickness of the component before the passivation layer thickening operation, the post-thickening passivation layer thickness of the component after the passivation layer thickening operation, and the test thickening duration of the passivation layer thickening operation according to the historical test data; determining the reference thickening rate of the passivation layer of the component for the passivation layer thickening operation according to the ratio of the difference between the post-thickening passivation layer thickness and the pre-thickening passivation layer thickness to the test thickening duration.

6. The surface treatment method of the internal component of the plasma reaction chamber according to claim 1, characterized in that, After the passivation layer is directly thinned to zero, a passivation layer gas is introduced into the air inlet to perform a passivation layer thickening operation on the current component, so as to thicken and refurbish the passivation layer of the current component; The passivation layer thickening operation further includes: when one of the pressure in the reaction chamber and the flow rate of the passivation layer gas introduced is unchanged, the other increases or decreases stepwise with the duration of the passivation layer gas introduced, and each stepwise increase or decrease operation constitutes a cycle step.

7. The surface treatment method of the internal component of the plasma reaction chamber according to claim 6, characterized in that, The component includes a liftable lifting platform; The surface treatment method of the internal components of the plasma reaction chamber further includes: driving the lifting platform to lift, so that the distance between the lifting platform and the air inlet increases or decreases stepwise, and each stepwise increase or decrease operation of the distance constitutes a distance cycle step, and a pressure increase or decrease operation and / or a flow rate increase or decrease operation are performed at each of the distances.

8. The surface treatment method of the internal component of the plasma reaction chamber according to claim 1, wherein The component includes a spraying component communicated with the air inlet and a liftable lifting platform located below the spraying component; The surface treatment method of the internal components of the plasma reaction chamber further includes: when the thickness of the passivation layer of the lifting platform is zero, transmitting a shielding member for shielding the upper surface of the lifting platform to the lifting platform, and continuing to introduce the passivation layer dissociation gas after shielding.

9. A plasma device, characterized in that, Including: The equipment main body includes a reaction chamber, an air inlet communicated with the reaction chamber, and components located in the reaction chamber; A plasma radio frequency device is provided on the equipment main body for forming a radio frequency electric field in the reaction chamber by radio frequency; A dissociation gas delivery unit has a dissociation gas delivery outlet for communicating with the air inlet, and can controllably conduct or disconnect the dissociation gas output of the dissociation gas delivery outlet; A plasma gas delivery unit has a plasma gas delivery outlet for communicating with the air inlet, and can controllably conduct or disconnect the plasma gas output of the plasma gas delivery outlet; And A control unit, connected to the device body, the plasma gas delivery unit, and the dissociation gas delivery unit, is configured to control the delivery conditions of the plasma gas delivery unit and the dissociation gas delivery unit according to the thickness of the passivation layer of the component, so as to perform the surface treatment method according to any one of claims 1 to 8 on the thickness of the passivation layer of the component.

10. The plasma device according to claim 9, wherein, It further includes: A passivation layer gas delivery unit, having a passivation layer gas delivery outlet communicating with the air inlet, and the passivation layer gas delivery unit can be controlled to conduct / block the passivation layer gas output of the passivation layer gas delivery outlet; the control unit is connected to the passivation layer gas delivery unit and is configured to control the delivery conditions of the passivation layer gas delivery unit according to the thickness of the passivation layer of the component; and / or The component includes a liftable lift platform located below the air inlet; the plasma device further includes a lift drive assembly, and the control unit is connected to the lift drive assembly and is configured to control the lift stroke of the lift platform by controlling the driving conditions of the lift drive assembly; and / or The plasma device further includes an exhaust gas unit, the exhaust gas unit is provided at the exhaust port of the device body, and the control unit is connected to the exhaust gas unit and is configured to control the exhaust conditions of the exhaust gas unit; and / or The component includes a spray member communicating with the air inlet and a liftable lift platform located below the spray member; The device body is provided with a transfer port communicating with the reaction chamber and a transfer door for opening / closing the transfer port; The plasma device further includes: a transfer assembly, configured to transfer a shielding member to the lift platform when the transfer port is opened; The control unit is connected to the actuator of the transfer door and the transfer assembly, and is configured to control the opening / closing conditions of the transfer door and the transfer conditions of the transfer assembly.

Images