GaN-based blue-light semiconductor laser chip

Abstract

The invention discloses a GaN-based blue-light semiconductor laser chip which sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and a phonon scattering enhancement layer is arranged between the upper waveguide layer and the upper limiting layer. The phonon scattering enhancement layer comprises a first phonon scattering enhancement layer, a second phonon scattering enhancement layer and a third phonon scattering enhancement layer. Through specific element proportional distribution, a deep energy level trap and an insulating interface layer are further inhibited, the abrupt change phenomenon of the laser at a threshold value due to symmetry breaking corresponding to phase change away from an equilibrium state is improved, and the laser coherence and the beam quality factor of the laser are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a GaN-based blue semiconductor laser chip. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the W level, while the nitride semiconductor light-emitting diode is spontaneous emission, and the output power of a single light-emitting diode is in the mW level.

[0005] 2) The operating current density of the laser reaches KA / cm 2 , which is more than two orders of magnitude higher than that of the nitride light-emitting diode, thus causing stronger electron leakage, more serious Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, resulting in a more serious efficiency droop effect.

[0006] 3) The light-emitting diode undergoes spontaneous transition radiation, which is incoherent light that jumps from a high energy level to a low energy level without external action, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference of the electron transition, generating completely identical coherent light of the photon and the induced photon.

[0007] 4) The principles are different: The light-emitting diode undergoes radiative recombination and emits light when electrons and holes jump to the quantum well or p-n junction under the action of an external voltage, while the laser requires the lasing conditions to be met before it can lase. It must satisfy the inverted distribution of carriers in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] The nitride semiconductor laser has the following problems:

[0009] 1) After the laser emits stable laser and reaches saturation, the quasi-Fermi levels of holes and electrons are pinned. Stimulated emission dominates, and the injected carriers are completely converted into photon output. The carrier concentration reaches saturation, the optical gain reaches saturation, the junction voltage also reaches saturation, and the carrier concentration in the cavity does not change with current. The symmetry breaking corresponding to the phase transition of the laser far from the equilibrium state causes discontinuous or abrupt phenomena at the threshold of the laser, such as the jump of conductance, the sinking of capacitance, the jump of junction voltage, the sinking of series resistance, the jump of ideality factor, etc. This discontinuous phenomenon is mainly affected by factors such as the capture effect in the depletion region, surface conditions, edge effects, deep-level traps, insulating interface layers, and series resistance.

[0010] 2) The modes of the laser light wave can be divided into transverse modes and longitudinal modes; the transverse mode light intensity distribution in the cross-section perpendicular to the optical axis is determined by the waveguide structure of the semiconductor laser. If the transverse mode is complex and unstable, the coherence of the output light is poor; the longitudinal mode is a standing wave distribution in the propagation direction of the resonant cavity. If many longitudinal modes lase simultaneously or there are inter-mode variations, high temporal coherence cannot be obtained, and the quality of the far-field image FFP is poor. The longitudinal light field of the laser is restricted by the upper and lower confinement layers. The longitudinal divergence angle of the main spot light field is large, the far-field spot is elliptical, and the beam quality is good. The refractive index dispersion of the laser and the concentration fluctuations of high-concentration carriers affect the refractive index of the active layer. The confinement factor decreases with the increase of wavelength, resulting in a decrease in the mode gain of the laser. Summary of the Invention

[0011] The present invention proposes a GaN-based blue semiconductor laser chip. Through a specific element ratio distribution, the deep-level traps and insulating interface layers are further suppressed, the abrupt phenomenon at the threshold of the laser caused by the symmetry breaking corresponding to the phase transition far from the equilibrium state is improved, and the laser coherence and beam quality factor of the laser are enhanced.

[0012] A GaN-based blue semiconductor laser chip provided by the present invention sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer from bottom to top. There is a phonon scattering enhancement layer between the upper waveguide layer and the upper confinement layer.

[0013] The phonon scattering enhancement layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond.

[0014] The phonon scattering enhancement layer includes a first phonon scattering enhancement layer, a second phonon scattering enhancement layer, and a third phonon scattering enhancement layer.

[0015] Preferably, the breakdown field strength distribution of the first phonon scattering enhancement layer has a curve distribution of the function y = A + B * lnx / x, the breakdown field strength distribution of the second phonon scattering enhancement layer has a linear function curve distribution, and the breakdown field strength distribution of the third phonon scattering enhancement layer has a function y = C + D * e x / x 2 second quadrant curve distribution; the breakdown field strength of the first phonon scattering enhancement layer is d, the breakdown field strength of the second phonon scattering enhancement layer is e, and the breakdown field strength of the third phonon scattering enhancement layer is f, where: 1E5 ≤ e ≤ d ≤ f ≤ 1E8 (V / cm).

[0016] Preferably, the electron affinity distribution of the first phonon scattering enhancement layer has a curve distribution of the function y = E + F * x / e x curve distribution, the electron affinity distribution of the second phonon scattering enhancement layer has a linear function curve distribution, and the electron affinity distribution of the third phonon scattering enhancement layer has a function y = G + H * e x cosx third quadrant curve distribution; the electron affinity of the first phonon scattering enhancement layer is g, the electron affinity of the second phonon scattering enhancement layer is h, and the electron affinity of the third phonon scattering enhancement layer is i, where: 0.1 ≤ h ≤ i ≤ g ≤ 10 (eV).

[0017] Preferably, the refractive index coefficient distribution of the first phonon scattering enhancement layer has a curve distribution of the function y = I + J * lnx / e x curve distribution, the refractive index coefficient distribution of the second phonon scattering enhancement layer has a linear function curve distribution, and the refractive index coefficient distribution of the third phonon scattering enhancement layer has a function y = K + L * e x / x 2 second quadrant curve distribution; the refractive index coefficient of the first phonon scattering enhancement layer is j, the refractive index coefficient of the second phonon scattering enhancement layer is k, and the refractive index coefficient of the third phonon scattering enhancement layer is l, where: 1.0 ≤ l ≤ k ≤ j ≤ 5.0.

[0018] Preferably, the longitudinal sound velocity distribution of the first phonon scattering enhancement layer has a curve distribution of the function y = M + N * xe x curve distribution, the longitudinal sound velocity distribution of the second phonon scattering enhancement layer has a linear function curve distribution, and the longitudinal sound velocity distribution of the third phonon scattering enhancement layer has a function y = P + Q * x / lnx fourth quadrant curve distribution; the longitudinal sound velocity of the first phonon scattering enhancement layer is m, the longitudinal sound velocity of the second phonon scattering enhancement layer is n, and the longitudinal sound velocity of the third phonon scattering enhancement layer is p, where: 5E4 ≤ m ≤ n ≤ p ≤ 5E6 (cm / s).

[0019] Preferably, the In / C element ratio distribution of the first phonon scattering enhancement layer has a functional distribution of y = R + S*lnx / e x Curve distribution; the Al / C element ratio distribution of the second phonon scattering enhancement layer has a linear functional distribution; the Al / C element ratio distribution of the third phonon scattering enhancement layer has a functional distribution of y = T + U*x / lnx in the fourth quadrant curve distribution.

[0020] Preferably, the In / O element ratio distribution of the first phonon scattering enhancement layer has a functional distribution of y = V + W*x / e x Curve distribution; the Al / O element ratio distribution of the second phonon scattering enhancement layer has a linear functional distribution; the Al / O element ratio distribution of the third phonon scattering enhancement layer has a functional distribution of y = O + Z*sinx / x 2 Third quadrant curve distribution.

[0021] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, with the number of periods 3≥m≥1. The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 to 100 angstroms. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 、BN, diamond, with a thickness of 10 to 200 angstroms.

[0022] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, or any combination thereof.

[0023] Preferably, the substrate includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x 、sapphire / SiO 2 / SiN x composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate, or any one thereof.

[0024] Compared with the prior art, a GaN-based blue semiconductor laser chip provided by an embodiment of the present invention has the following beneficial effects:

[0025] 1. By designing a specific breakdown field strength distribution and electron affinity distribution, the phonon scattering enhancement layer enhances the photon-electron coupling effect of the active layer, suppresses the capture effect and edge effect of the laser depletion layer, improves the Kink discontinuity or mutation phenomenon of the laser, suppresses the problem of conductance jump and capacitance sink, improves the mode instability problem, and enhances the coherence of the laser.

[0026] 2. The specific refractive index coefficient distribution and longitudinal sound velocity distribution of the phonon scattering enhancement layer enhance the optical coupling of the laser, improve the confinement effect of the longitudinal optical field, reduce the inter-mode variation and fluctuation of the laser, enhance the confinement of the longitudinal optical field, suppress the refractive index dispersion, and enhance the longitudinal divergence angle, laser coherence, beam quality factor, and confinement factor.

[0027] 3. The specific element ratio distribution of the phonon scattering enhancement layer further suppresses deep-level traps and the insulating interface layer, improves the symmetry breaking corresponding to the phase transition far from the equilibrium state, and enables the sudden change phenomenon of the laser at the threshold, thereby enhancing the laser coherence and beam quality factor of the laser. Brief Description of the Drawings

[0028] Figure 1 It is a schematic structural diagram of a GaN-based blue semiconductor laser chip provided by the present invention.

[0029] Figure 2 It is a secondary ion mass spectrometry (SIMS) diagram of a GaN-based blue semiconductor laser chip provided by the present invention.

[0030] In the figure: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: upper confinement layer; 106: phonon scattering enhancement layer; 106a: first phonon scattering enhancement layer; 106b: second phonon scattering enhancement layer; 106c: third phonon scattering enhancement layer. Detailed Embodiments

[0031] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0032] To solve the above problems, a GaN-based blue semiconductor laser chip provided by the embodiments of the present application will be introduced and described in detail through the following specific embodiments.

[0033] Refer to Figure 1-2 , a GaN-based blue semiconductor laser chip provided by the present invention sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 from bottom to top. There is a phonon scattering enhancement layer 106 between the upper waveguide layer 104 and the upper confinement layer 105.

[0034] The phonon scattering enhancement layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond;

[0035] The phonon scattering enhancement layer 106 includes a first phonon scattering enhancement layer 106a, a second phonon scattering enhancement layer 106b, and a third phonon scattering enhancement layer 106c.

[0036] The breakdown field strength distribution of the first phonon scattering enhancement layer 106a has a curve distribution of the function y = A + B*lnx / x, the breakdown field strength distribution of the second phonon scattering enhancement layer 106b has a linear function curve distribution, and the breakdown field strength distribution of the third phonon scattering enhancement layer 106c has a curve distribution of the function y = C + D*e x / x 2 in the second quadrant; the electron affinity distribution of the first phonon scattering enhancement layer 106a has a curve distribution of the function y = E + F*x / e x curve, the electron affinity distribution of the second phonon scattering enhancement layer 106b has a linear function curve distribution, and the electron affinity distribution of the third phonon scattering enhancement layer 106c has a curve distribution of the function y = G + H*e x cosx in the third quadrant.

[0037] The breakdown field strength of the first phonon scattering enhancement layer 106a is d, the breakdown field strength of the second phonon scattering enhancement layer 106b is e, and the breakdown field strength of the third phonon scattering enhancement layer 106c is f, where: 1E5 ≤ e ≤ d ≤ f ≤ 1E8 (V / cm); the electron affinity of the first phonon scattering enhancement layer 106a is g, the electron affinity of the second phonon scattering enhancement layer 106b is h, and the electron affinity of the third phonon scattering enhancement layer 106c is i, where: 0.1 ≤ h ≤ i ≤ g ≤ 10 (eV).

[0038] By designing specific breakdown field strength distributions and electron affinity distributions, the phonon scattering enhancement layer enhances the photon-electron coupling effect of the active layer, suppresses the trapping effect and edge effect of the depletion layer of the laser, improves the Kink discontinuity or mutation phenomenon of the laser, suppresses the problem of conductance jump and capacitance sink, improves the problem of mode instability, and enhances the coherence of the laser.

[0039] The refractive index coefficient distribution of the first phonon scattering enhancement layer 106a has a function y = I + J * lnx / e x Curve distribution. The refractive index coefficient distribution of the second phonon scattering enhancement layer 106b has a linear function curve distribution. The refractive index coefficient distribution of the third phonon scattering enhancement layer 106c has a function y = K + L * e x / x 2 Second quadrant curve distribution. The longitudinal sound velocity distribution of the first phonon scattering enhancement layer 106a has a function y = M + N * xe x Curve distribution. The longitudinal sound velocity distribution of the second phonon scattering enhancement layer 106b has a linear function curve distribution. The longitudinal sound velocity distribution of the third phonon scattering enhancement layer 106c has a function y = P + Q * x / lnx fourth quadrant curve distribution.

[0040] The refractive index coefficient of the first phonon scattering enhancement layer 106a is j, the refractive index coefficient of the second phonon scattering enhancement layer 106b is k, and the refractive index coefficient of the third phonon scattering enhancement layer 106c is l, where: 1.0 ≤ l ≤ k ≤ j ≤ 5.0; The longitudinal sound velocity of the first phonon scattering enhancement layer 106a is m, the longitudinal sound velocity of the second phonon scattering enhancement layer 106b is n, and the longitudinal sound velocity of the third phonon scattering enhancement layer 106c is p, where: 5E4 ≤ m ≤ n ≤ p ≤ 5E6 cm / s.

[0041] The specific refractive index coefficient distribution and longitudinal sound velocity distribution of the phonon scattering enhancement layer enhance the optical coupling of the laser, improve the confinement effect of the longitudinal optical field, reduce the inter-mode variation and fluctuation of the laser, enhance the confinement of the longitudinal optical field, suppress the refractive index dispersion, and enhance the longitudinal divergence angle, laser coherence, beam quality factor, and confinement factor.

[0042] The In / C element ratio distribution of the first phonon scattering enhancement layer 106a has a function y = R + S * lnx / e x Curve distribution. The Al / C element ratio distribution of the second phonon scattering enhancement layer 106b has a linear function distribution. The Al / C element ratio distribution of the third phonon scattering enhancement layer 106c has a function y = T + U * x / lnx fourth quadrant curve distribution. The In / O element ratio distribution of the first phonon scattering enhancement layer 106a has a function y = V + W * x / e x Curve distribution. The Al / O element ratio distribution of the second phonon scattering enhancement layer 106b has a linear function distribution. The Al / O element ratio distribution of the third phonon scattering enhancement layer 106c has a function y = O + Z * sinx / x 2 Third quadrant curve distribution.

[0043] The specific element ratio distribution of the phonon scattering enhancement layer further suppresses deep-level traps and the insulating interface layer, improves the symmetry breaking corresponding to the phase transition far from equilibrium, and enables the laser to exhibit a sudden change at the threshold, enhancing the laser coherence and beam quality factor of the laser.

[0044] Specifically, as shown in the following table, the data of the traditional laser and the laser of the present invention are compared.

[0045] Blue Laser - Project Conventional Laser Laser of the Present Invention Variation Range <![CDATA[Beam quality factor M 2 > 3.7 2.14 73％ Slope Efficiency (W / A) 0.8 1.37 71％

[0046] In the present invention, the active layer 103 is a periodic structure composed of well layers and barrier layers, with the number of periods 3≥m≥1. The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10-100 angstroms. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 、BN, diamond, with a thickness of 10-200 angstroms.

[0047] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 、BN, diamond.

[0048] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO 2 / SiN x composite substrate, magnesium aluminate spinel MgAl 2 O 4 , MgO, ZnO, ZrB 2 , LiAlO 2 and LiGaO 2 composite substrate, or any one of them.

[0049] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A GaN-based blue light semiconductor laser chip, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A phonon scattering enhancement layer (106) is provided between the upper waveguide layer (104) and the upper confinement layer (105). The phonon scattering enhancement layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond; The phonon scattering enhancement layer (106) comprises a first phonon scattering enhancement layer (106a), a second phonon scattering enhancement layer (106b) and a third phonon scattering enhancement layer (106c).

2. A GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The breakdown field intensity distribution of the first phonon scattering enhancement layer (106a) has a function y=A+B*lnx / x curve distribution, the breakdown field intensity distribution of the second phonon scattering enhancement layer (106b) has a linear function curve distribution, and the breakdown field intensity distribution of the third phonon scattering enhancement layer (106c) has a function y=C+D*e x / x 2 The second quadrant curve is distributed; the breakdown field strength of the first phonon scattering enhancement layer (106a) is d, the breakdown field strength of the second phonon scattering enhancement layer (106b) is e, and the breakdown field strength of the third phonon scattering enhancement layer (106c) is f, wherein: 1E5≤e≤d≤f≤1E8 (V / cm).

3. A GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The electron affinity energy distribution of the first phonon scattering enhancement layer (106a) has a function y=E+F*x / e x The electron affinity energy distribution of the second phonon scattering enhancement layer (106b) has a linear function curve distribution, and the electron affinity energy distribution of the third phonon scattering enhancement layer (106c) has a function y=G+H*e x The cosx third quadrant curve is distributed; the electron affinity of the first phonon scattering enhancement layer (106a) is g, the electron affinity of the second phonon scattering enhancement layer (106b) is h, and the electron affinity of the third phonon scattering enhancement layer (106c) is i, wherein: 0.1≤h≤i≤g≤10 (eV).

4. The GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The refractive index distribution of the first phonon scattering enhancement layer (106a) has a function y=I+J*lnx / e x The refractive index coefficient distribution of the second phonon scattering enhancement layer (106b) has a linear function curve distribution, and the refractive index coefficient distribution of the third phonon scattering enhancement layer (106c) has a function y=K+L*e x / x 2 The second quadrant curve is distributed; the refractive index coefficient of the first phonon scattering enhancement layer (106a) is j, the refractive index coefficient of the second phonon scattering enhancement layer (106b) is k, and the refractive index coefficient of the third phonon scattering enhancement layer (106c) is l, wherein: 1.0≤l≤k≤j≤5.

0.

5. The GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The longitudinal sound velocity distribution of the first phonon scattering enhancement layer (106a) has a function y=M+N*xe x The longitudinal sound velocity distribution of the second phonon scattering enhanced layer (106b) has a linear function curve distribution, and the longitudinal sound velocity distribution of the third phonon scattering enhanced layer (106c) has a fourth quadrant curve distribution of the function y=P+Q*x / lnx; the longitudinal sound velocity of the first phonon scattering enhanced layer (106a) is m, the longitudinal sound velocity of the second phonon scattering enhanced layer (106b) is n, and the longitudinal sound velocity of the third phonon scattering enhanced layer (106c) is p, wherein: 5E4≤m≤n≤p≤5E6 (cm / s).

6. The GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The In / C element ratio distribution of the first phonon scattering enhancement layer (106a) has a function y=R+S*lnx / e x Curve distribution; the Al / C element ratio distribution of the second phonon scattering enhancement layer (106b) has a linear function distribution; the Al / C element ratio distribution of the third phonon scattering enhancement layer (106c) has a fourth quadrant curve distribution of the function y=T+U*x / lnx.

7. The GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The In / O element ratio distribution of the first phonon scattering enhancement layer (106a) has a function y=V+W*x / e x The Al / O element ratio distribution of the second phonon scattering enhancement layer (106b) has a linear function distribution; the Al / O element ratio distribution of the third phonon scattering enhancement layer (106c) has a function y=O+Z*sinx / x 2 The third quadrant curve distribution.

8. The GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond or the like. Any combination, with a thickness of 10 to 100 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

9. The GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

10. The GaN-based blue light semiconductor laser chip according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, Mo, CuW, TiW, Cu, diamond, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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