Power semiconductor device and control method thereof

Abstract

The invention discloses a power semiconductor device. The power semiconductor device comprises a switching device and a driving circuit, the switching device comprises a wide bandgap material MOSFET device and a silicon-based IGBT device which are connected in parallel. The driving circuit controls the switching device to work in a first mode or a second mode based on the load feedback signal. In at least one switching period, when the power semiconductor device works in a first mode, the drive circuit controls the silicon-based IGBT device to be turned off earlier than the wide bandgap material MOSFET device; and when the power semiconductor device works in a second mode, the driving circuit controls the silicon-based IGBT device and the wide bandgap material MOSFET device to be turned off at the same time. According to the power semiconductor device and the control method thereof provided by the invention, through the optimized control method, the power circuit adopting the power semiconductor device obtains optimal efficiency and reliable operation under different working conditions and power loads.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and particularly to a power semiconductor device and a control method thereof. Background Art

[0002] Power semiconductor devices are usually used as electronic switches in power conversion devices of electronic equipment such as automobiles, data centers, artificial intelligence, power tools, televisions, and refrigerators. The power semiconductor device may include one or more, the same or different power semiconductor devices. There are various types of power semiconductor devices. According to different device operating principles, power semiconductor devices include IGBT (Insulated-Gate Bipolar Transistor), MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), BJT (Bipolar Junction Transistor), and JFET (Junction Field Effect Transistor), etc. According to different materials, power semiconductor devices include Si (silicon-based) devices, SiC (silicon carbide) devices, GaN (gallium nitride) devices, etc. Compared with Si devices, wide bandgap devices such as SiC devices and GaN devices have obvious advantages in high-power, high-temperature and other fields. However, compared with Si devices, the prices of SiC devices and GaN devices are also relatively high.

[0003] Based on the comprehensive consideration of cost and performance, a hybrid power semiconductor device including different types of power semiconductor devices has become a relatively popular research direction at present. Summary of the Invention

[0004] This application provides a hybrid power semiconductor device and a control method thereof. Through an optimized control method, the power circuit using the hybrid power semiconductor device can obtain the best efficiency and reliable operation under different working conditions and power loads. In addition, under extreme working conditions such as overcurrent and short circuit, it can also ensure that the hybrid power semiconductor device safely and smoothly enters the protection state without burning out the power semiconductor devices therein, avoiding further out-of-control situations.

[0005] According to an embodiment of the present invention, a power semiconductor device is provided, including: a switching device including a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel; and a driving circuit that receives a load feedback signal and controls the switching device to operate in a first mode or a second mode based on the load feedback signal, and provides a first driving signal and a second driving signal for driving the wide bandgap material MOSFET device and the silicon-based IGBT device respectively. The driving circuit is configured to, in at least one switching cycle: when the switching device operates in the first mode, the driving circuit controls the silicon-based IGBT device to turn off prior to the wide bandgap material MOSFET device; and when the switching device operates in the second mode, the driving circuit controls the silicon-based IGBT device and the wide bandgap material MOSFET device to turn off simultaneously.

[0006] According to an embodiment of the present invention, a power semiconductor device is provided, including: a switching device including a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel; a driving circuit that receives a load feedback signal and controls the switching device to operate in a first mode or a second mode based on the load feedback signal, and provides a first driving signal and a second driving signal for driving the wide bandgap material MOSFET device and the silicon-based IGBT device respectively. The driving circuit is configured to, in at least one switching cycle: when the switching device operates in the first mode, the driving circuit controls the silicon-based IGBT device to turn off prior to the wide bandgap material MOSFET device, and the turn-off time difference between the two is between 0.3 μS and 1.5 μS; and when the switching device operates in the second mode, the driving circuit controls the silicon-based IGBT device to turn off prior to the wide bandgap material MOSFET device, and the turn-off time difference between the two is within 0.1 μS.

[0007] According to an embodiment of the present invention, a method for controlling a switching device is provided. The switching device includes a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel. The method for controlling the switching device includes: in at least one switching cycle, when the switching device operates in the first mode, controlling the silicon-based IGBT device to turn off prior to the wide bandgap material MOSFET device; and when the switching device operates in the second mode, controlling the silicon-based IGBT device and the wide bandgap material MOSFET device to turn off simultaneously.

[0008] According to an embodiment of the present invention, a method for controlling a switching device is provided. The switching device includes a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel. The method for controlling the switching device includes: in at least one switching cycle, when the switching device operates in a first mode, controlling the silicon-based IGBT device to turn off before the wide bandgap material MOSFET device, and the turn-off time difference is between 0.3 μS and 1.5 μS; and when the switching device operates in a second mode, controlling the silicon-based IGBT device to turn off before the wide bandgap material MOSFET device, and the turn-off time difference is within 0.1 μS. Description of the Drawings

[0009] Through the following description of the embodiments of the present application with reference to the drawings, the above and other objects, features, and advantages of the present application will become clearer:

[0010] Figure 1 It is a schematic circuit diagram of an existing three-phase DC / AC conversion circuit 100;

[0011] Figure 2 It is a schematic circuit diagram of a power semiconductor device 200 according to an embodiment of the present application;

[0012] Figure 3 It is a schematic waveform diagram of a first driving signal S11G and a second driving signal S12G in a first mode according to an embodiment of the present application;

[0013] Figure 4 It is a schematic waveform diagram of a first driving signal S11G and a second driving signal S12G in a second mode according to an embodiment of the present application;

[0014] Figure 5 It is a schematic waveform diagram of a first driving signal S11G and a second driving signal S12G in a second mode according to another embodiment of the present application;

[0015] Figure 6 It is a schematic waveform diagram of a first driving signal S11G and a second driving signal S12G in a first mode according to another embodiment of the present application;

[0016] Figure 7 It is a schematic waveform diagram of a first driving signal S11G and a second driving signal S12G in a second mode according to another embodiment of the present application;

[0017] Figure 8 It is a schematic flowchart of a control method 800 for a power semiconductor device according to an embodiment of the present application. Detailed Embodiments

[0018] Specific embodiments of the present invention will be described in detail below. It should be noted that the embodiments described here are only for illustrative purposes and are not used to limit the present invention. In the following description, in order to provide a thorough understanding of the present invention, a large number of specific details are set forth. However, it is obvious to those of ordinary skill in the art that the present invention does not have to employ these specific details. In other instances, well-known circuits, materials, or methods have not been described in detail to avoid obscuring the present invention.

[0019] In the following description, terms such as "first" and "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present application, unless otherwise specified, the meaning of "a plurality" is two or more.

[0020] In addition, in the present application, orientation terms such as "upper" and "lower" may include, but are not limited to, being defined relative to the schematic placement of components in the drawings. It should be understood that these directional terms may be relative concepts, and they are used for relative description and clarification, and they may change accordingly with the change of the orientation of the components placed in the drawings.

[0021] In the present application, unless otherwise clearly defined and limited, the term "connection" should be understood in a broad sense. For example, "connection" may be a fixed connection, a detachable connection, or integrated; it may be directly connected or indirectly connected through an intermediate medium. In addition, the term "coupling" may be a way of realizing electrical connection for signal transmission. "Coupling" may be a direct electrical connection or an indirect electrical connection through an intermediate medium.

[0022] In order to make the application of power devices more flexible, the power device package provided by the embodiments of the present application is relatively flexible, which is convenient for wiring during actual application and layout on the circuit board.

[0023] The embodiments of the present application do not specifically limit the specific application scenarios of the power device. For example, it can be applied to a power system, where the power system can be a photovoltaic power generation system, a wind power system, or an energy storage system. In addition, it can also be applied to an electric vehicle charging pile, an electric vehicle charger, or a motor driver. For example, the charging circuit inside the charging pile generally includes a power converter, and the power converter may include a DC / DC conversion circuit and an AC / DC conversion circuit (rectifier circuit). These conversion circuits generally include power semiconductor devices. In addition, it can also be applied to the power supply of a data center or artificial intelligence (AI).

[0024] To facilitate a better understanding of the technical solutions provided in the embodiments of the present application by those skilled in the art, the following takes a three-phase DC / AC conversion circuit (inverter circuit) as an example to introduce one of the applications of the power semiconductor device provided in the embodiments of the present application.

[0025] Figure 1 FIG. 4 is a schematic circuit diagram of an existing three-phase DC / AC conversion circuit 100. The DC / AC conversion circuit 100 includes three half-bridge circuits. Each of the switching devices P1 - P6 has a first terminal 1, a second terminal 2, and a control terminal 3. The switching device P1 and the switching device P2 are connected in series to form a half-bridge circuit, and an AC power terminal U is provided at the connection point of the switching devices P1 and P2. The switching device P3 and the switching device P4 are connected in series to form a half-bridge circuit, and an AC power terminal V is provided at the connection point of the switching devices P3 and P4. The switching device P5 and the switching device P6 are connected in series to form a half-bridge circuit, and an AC power terminal W is provided at the connection point of the switching devices P5 and P6. One end of each half-bridge circuit is connected to the DC power terminal DC+, and the other end is connected to the DC power terminal DC-. The control terminals 3 of the switching devices P1 - P6 respectively receive the control signals G1 - G6 from the drive circuit. The switching devices P1 and P2 are alternately turned on and off, the switching devices P3 and P4 are alternately turned on and off, and the switching devices P5 and P6 are alternately turned on and off.

[0026] In Figure 1 each of the switching devices P1 - P6 may include a plurality of power semiconductor devices connected in parallel, or may be a combination of a plurality of controllable power semiconductor devices and uncontrollable power semiconductor devices.

[0027] Figure 2 FIG. 13 is a schematic circuit diagram of a power semiconductor device 200 according to an embodiment of the present application.

[0028] As Figure 2 shown, the power semiconductor device 200 includes a switching device S1 and a drive circuit 210. The switching device S1 includes a SiC MOSFET device S11 and a silicon-based IGBT device S12. The SiC MOSFET device S11 and the silicon-based IGBT device S12 are connected in parallel between the first terminal 201 and the second terminal 202 of the switching device S1. The first terminal of the SiC MOSFET device S11 is connected to the first terminal 201 of the switching device S1, the second terminal is connected to the second terminal 202 of the switching device S1, and the control terminal receives the first drive signal S11G. The first terminal of the silicon-based IGBT device S12 is connected to the first terminal 201 of the switching device S1, the second terminal is connected to the second terminal 202 of the switching device S1, and the control terminal receives the second drive signal S12G. The switching device S1 can be used as Figure 1 any one of the switching devices P1 - P6 of the three-phase DC / AC conversion circuit 100 shown in

[0029] The drive circuit 210 receives the load feedback signal 203, and based on the load feedback signal 203, provides a first drive signal S11G to control the on / off of the SiC MOSFET device S11, and provides a second drive signal S12G to control the on / off of the silicon-based IGBT device S12. It should be understood that both the SiC MOSFET device S11 and the silicon-based IGBT device S12 have turn-on thresholds. When the voltage at their control terminals is greater than the corresponding turn-on thresholds, the corresponding devices conduct, otherwise they turn off. Specifically, the SiC MOSFET device S11 has a first threshold Vth1. When the first drive signal S11G is greater than the first threshold Vth1, the SiC MOSFET device S11 conducts. When the first drive signal S11G is less than the first threshold Vth1, the SiC MOSFET device S11 turns off. The silicon-based IGBT device S12 has a second threshold Vth2. When the second drive signal S12G is greater than the second threshold Vth2, the silicon-based IGBT device S12 conducts. When the second drive signal S12G is less than the second threshold Vth2, the silicon-based IGBT device S12 turns off.

[0030] In Figure 2 the embodiment, based on the load feedback signal 203, the drive circuit 210 controls the switching device S1 to operate in the first mode or the second mode. Figure 3 FIG. is a waveform diagram of the first drive signal S11G and the second drive signal S12G in the first mode according to an embodiment of the present application. Figure 4 FIG. is a waveform diagram of the first drive signal S11G and the second drive signal S12G in the second mode according to an embodiment of the present application. The following will be combined with Figure 2 、 Figure 3 and Figure 4 to illustrate the working process of the power semiconductor device 200.

[0031] As Figure 3 shown, when the switching device S1 operates in the first mode, within one switching cycle, the silicon-based IGBT device S12 and the SiC MOSFET device S11 conduct simultaneously at time t1. That is, at time t1, the first drive signal S11G increases to the first threshold Vth1, and the second drive signal S12G increases to the second threshold Vth2, and both the silicon-based IGBT device S12 and the SiC MOSFET device S11 conduct. When the switching device S1 needs to turn off, the silicon-based IGBT device S12 turns off prior to the SiC MOSFET device S11. As Figure 3As shown, at time t2, the second driving signal S12G drops to the second threshold Vth2, and the silicon-based IGBT device S12 turns off. After a first delay Td1, at time t3, the first driving signal S11G drops to the first threshold Vth1, and the SiC MOSFET device S11 turns off.

[0032] As Figure 4 shown, when the switching device S1 operates in the second mode, within one switching cycle, the silicon-based IGBT device S12 and the SiC MOSFET device S11 are turned on simultaneously at time t4. That is, at time t4, the first driving signal S11G increases to the first threshold Vth1, and the second driving signal S12G increases to the second threshold Vth2, and both the silicon-based IGBT device S12 and the SiC MOSFET device S11 are turned on. When the switching device S1 needs to turn off, the silicon-based IGBT device S12 and the SiC MOSFET device S11 turn off simultaneously. As Figure 4 shown, at time t5, the second driving signal S12G drops to the second threshold Vth2, the silicon-based IGBT device S12 turns off, and the first driving signal S11G drops to the first threshold Vth1, and the SiC MOSFET device S11 turns off.

[0033] Different modes characterize different circuit states.

[0034] In some embodiments, the load feedback signal 203 characterizes the load of the switching device S1, that is, the load current or load power on the switching device S1. In one embodiment, when the load feedback signal 203 is less than a mode threshold Mdth corresponding to the load magnitude, it characterizes that the load of the switching device S1 is relatively small; otherwise, it characterizes that the load of the switching device S1 is relatively large. When the load of the switching device S1 is relatively small, the switching device S1 operates in the first mode; otherwise, the switching device S1 operates in the second mode. In one embodiment, the mode threshold Mdth corresponds to the load current on the switching device S1. In another embodiment, the mode threshold Mdth corresponds to the load power on the switching device S1.

[0035] In one embodiment, the load feedback signal 203 represents the load current flowing through the switching device S1, and the mode threshold Mdth corresponds to the rated current of the SiC MOSFET device S11 at a junction temperature of 100°C. In one embodiment, the mode threshold Mdth includes a hysteresis upper limit and a hysteresis lower limit. When the load current flowing through the switching device S1 is less than the first multiple of the rated current I11 of the SiC MOSFET device S11 at a junction temperature of 100°C, the load feedback signal 203 is less than the hysteresis lower limit of the mode threshold Mdth, and the switching device S1 operates in the first mode. When the load current flowing through the switching device S1 is greater than the second multiple of the rated current I11 of the SiC MOSFET device S11 at a junction temperature of 100°C, the load feedback signal 203 is greater than the hysteresis upper limit of the mode threshold Mdth, and the switching device S1 operates in the second mode. The first multiple is less than the second multiple. In one embodiment, the first multiple is 1.4 times and the second multiple is 1.5 times. In some embodiments, the SiC MOSFET device S11 includes a plurality of parallel-connected SiC MOSFET devices. In this case, the rated current I11 of the SiC MOSFET device S11 at a junction temperature of 100°C refers to the sum of the rated currents of the plurality of parallel-connected SiC MOSFET devices at a junction temperature of 100°C. In one embodiment, the load feedback signal 203 may be the current value flowing through the switching device S1, and the hysteresis lower limit and the hysteresis upper limit of the mode threshold Mdth respectively include the first multiple and the second multiple of the rated current I11 of the SiC MOSFET device S11 at a junction temperature of 100°C. In one embodiment, the load feedback signal 203 is proportional to the current value flowing through the switching device S1. Accordingly, the hysteresis lower limit and the hysteresis upper limit of the mode threshold Mdth are respectively proportional to the first multiple and the second multiple of the rated current I11 of the SiC MOSFET device S11 at a junction temperature of 100°C.

[0036] In one embodiment, the load feedback signal 203 characterizes the junction temperature of the SiC MOSFET device S11, and the mode threshold Mdth corresponds to the junction temperature threshold of the SiC MOSFET device S11. In one embodiment, the mode threshold Mdth includes a hysteresis upper limit and a hysteresis lower limit. When the junction temperature of the SiC MOSFET device S11 is less than the first temperature T1, the load feedback signal 203 is less than the hysteresis lower limit of the mode threshold Mdth, indicating that the junction temperature of the SiC MOSFET device S11 is relatively small, and the switching device S1 operates in the first mode. When the junction temperature of the SiC MOSFET device S11 is greater than the second temperature T2, the load feedback signal 203 is greater than the hysteresis upper limit of the mode threshold Mdth, indicating that the junction temperature of the SiC MOSFET device S11 is relatively large, and the switching device S1 operates in the second mode. The first temperature T1 is less than the second temperature T2. In one embodiment, the first temperature T1 is 140 °C and the second temperature is 150 °C. In some embodiments, the SiC MOSFET device S11 includes a plurality of parallel SiC MOSFET devices. In this case, the junction temperature of the SiC MOSFET device S11 refers to the junction temperature of any one of the SiC MOSFET devices. In one embodiment, the load feedback signal 203 can be the junction temperature of the SiC MOSFET device S11, and the hysteresis lower limit and the hysteresis upper limit of the mode threshold Mdth include the first temperature and the second temperature, respectively. In one embodiment, the load feedback signal 203 is proportional to the junction temperature of the SiC MOSFET device S11. Accordingly, the hysteresis lower limit and the hysteresis upper limit of the mode threshold Mdth are proportional to the first temperature and the second temperature, respectively. To a certain extent, the junction temperature of the SiC MOSFET device S11 also reflects the magnitude of its load. Generally speaking, the higher the junction temperature of the SiC MOSFET device S11, the greater the corresponding load. The size of the SiC MOSFET device S11 is generally relatively small, and its heat dissipation capacity is limited. Therefore, in some embodiments of the present application, when the load of the switching device S1 increases, to prevent the junction temperature of the SiC MOSFET device S11 from being too high, which may cause device damage or a decrease in current conduction ability, the drive circuit 210 controls the SiC MOSFET device S11 and the silicon-based IGBT device S12 to enter the second mode. When it is necessary to turn off the switching device S1, the SiC MOSFET device S11 and the silicon-based IGBT device S12 are turned off simultaneously, so that the silicon-based IGBT device S12 shares part of the turn-off loss, reduces the turn-off loss of the SiC MOSFET device S11, and reduces its heat generation.

[0037] In one embodiment, the load feedback signal 203 includes the current flowing through the switching device S1 and the junction temperature of the SiC MOSFET device S11. Correspondingly, the mode threshold Mdth includes a lower hysteresis limit and an upper hysteresis limit corresponding to the current flowing through the switching device S1, and a lower hysteresis limit and an upper hysteresis limit corresponding to the junction temperature of the SiC MOSFET device S11. When the current flowing through the switching device S1 is less than the first multiple of the rated current I11 of the SiC MOSFET device S11 at a junction temperature of 100 °C, and the junction temperature of the SiC MOSFET device S11 is less than the first temperature T1, the switching device S1 operates in the first mode. When the current flowing through the switching device S1 is greater than the second multiple of the rated current I11 of the SiC MOSFET device S11 at a junction temperature of 100 °C or when the junction temperature of the SiC MOSFET device S11 is greater than the second temperature T2, the switching device S1 operates in the second mode. The first multiple is less than the second multiple, and the first temperature T1 is less than the second temperature T2. In one embodiment, the first multiple is 1.4 times, the second multiple is 1.5 times, the first temperature T1 is 140 °C, and the second temperature is 150 °C.

[0038] During the turn-off process of the switching device S1, the silicon-based IGBT device S12 has a tail current, resulting in a large turn-off loss. To reduce the turn-off loss of the silicon-based IGBT device S12, in the first mode, the drive circuit 210 outputs a first drive signal S11G and a second drive signal S12G to control the silicon-based IGBT device S12 to turn off prior to the SiC MOSFET device S11. In this mode, when the silicon-based IGBT device S12 turns off, the SiC MOSFET device S11 is still conducting, and the silicon-based IGBT device S12 achieves zero-voltage turn-off, greatly reducing the turn-off loss. In one embodiment, within 0.3 μs to 1.5 μs after the silicon-based IGBT device S12 turns off, the SiC MOSFET device S11 turns off under the control of the first drive signal S11G. In the second mode, the drive circuit 210 outputs a first drive signal S11G and a second drive signal S12G to control the silicon-based IGBT device S12 and the SiC MOSFET device S11 to turn off simultaneously. In this mode, due to the large load, the silicon-based IGBT device S12 and the SiC MOSFET device S11 turn off simultaneously, which can relieve the turn-off loss pressure of the SiC MOSFET device S11.

[0039] In Figure 2In an embodiment, the driving circuit 210 further receives an overcurrent detection signal 204. The overcurrent detection signal 204 characterizes the magnitude of the current flowing through the switching device S1. In one embodiment, the overcurrent detection signal 204 is proportional to the actual value of the current flowing through the switching device S1. In one embodiment, the overcurrent detection signal 204 is a comparison result between the actual value of the current flowing through the switching device S1 and a corresponding threshold value. When the overcurrent detection signal 204 characterizes that the current flowing through the switching device S1 is greater than a certain value, the driving circuit 210 outputs a first driving signal S11G and a second driving signal S12G to turn off the SiCMOSFET device S11 and the silicon-based IGBT device S12 simultaneously.

[0040] Figure 5 FIG. is a waveform diagram of the first driving signal S11G and the second driving signal S12G in the second mode according to another embodiment of the present application. Compared with Figure 4 the embodiment, in Figure 5 the embodiment, after the silicon-based IGBT device S12 is turned off, after a second delay Td2, the SiC MOSFET device S11 is turned off. The duration of the second delay Td2 is controlled to be less than 0.1 μS, so as to balance the turn-off loss pressure between the SiC MOSFET device S11 and the silicon-based IGBT device S12 in a large-load state.

[0041] Figure 6 FIG. is a waveform diagram of the first driving signal S11G and the second driving signal S12G in the first mode according to another embodiment of the present application. Compared with Figure 3 the embodiment, in Figure 6 the embodiment, after the SiC MOSFET device S11 is turned on, after a third delay Td3, the silicon-based IGBT device S12 is turned on, so as to utilize the characteristics of the small junction capacitance and fast turn-on of the SiC MOSFET device S11 to reduce the overall turn-on loss of the switching device S1. In one embodiment, to balance the turn-on losses between the SiC MOSFET device S11 and the silicon-based IGBT device S12, the duration of the third delay Td3 is less than 0.1 μS.

[0042] Figure 7 FIG. is a waveform diagram of the first driving signal S11G and the second driving signal S12G in the second mode according to another embodiment of the present application. Compared with Figure 4 the embodiment, in Figure 7 the embodiment, after the SiC MOSFET device S11 is turned on, after a third delay Td3, the silicon-based IGBT device S12 is turned on, so as to utilize the characteristics of the small junction capacitance and fast turn-on of the SiC MOSFET device S11 to reduce the overall turn-on loss of the switching device S1.

[0043] Figure 8 FIG. 800 is a schematic flowchart of a control method for a switching device according to an embodiment of the present application. The switching device includes a switching device S1 as shown in Figure 2 FIG., that is, it includes a SiC MOSFET device S11 and a silicon-based IGBT device S12 connected in parallel. As shown in Figure 8 FIG., the control method 800 includes performing in at least one switching cycle: operation 801, determining the operating mode of the switching device based on a load feedback signal and a mode threshold; operation 802, in the first mode, controlling the silicon-based IGBT device to turn off before the SiC MOSFET device; and operation 803, in the second mode, controlling the silicon-based IGBT device and the SiC MOSFET device to turn off simultaneously. There is no sequential relationship between operation 802 and operation 803.

[0044] In one embodiment, when the silicon-based IGBT device turns off before the SiC MOSFET device, the turn-off time difference between the silicon-based IGBT device and the SiC MOSFET device is between 0.3 μS and 1.5 μS.

[0045] In one embodiment, the control method 800 further includes: operation 804, in the first mode, controlling the silicon-based IGBT device and the SiC MOSFET device to turn on simultaneously; and operation 805, in the second mode, controlling the silicon-based IGBT device and the SiC MOSFET device to turn on simultaneously.

[0046] In one embodiment, the control method 800 further includes: operation 806, in the first mode, controlling the SiC MOSFET device to turn on before the silicon-based IGBT device; and operation 807, in the second mode, controlling the SiC MOSFET device to turn on before the silicon-based IGBT device.

[0047] In one embodiment, the turn-on time difference between the SiC MOSFET device and the silicon-based IGBT device is within 0.1 μS.

[0048] In one embodiment, the control method 800 further includes operation 808, based on an overcurrent detection signal, the drive circuit simultaneously turns off the SiC MOSFET device and the silicon-based IGBT device. The overcurrent detection signal characterizes the current flowing through the switching device S1.

[0049] In one embodiment, the load feedback signal characterizes the load current or load power of the switching device. The mode threshold corresponds to the load current or load power of the switching device. When the load current or load power of the switching device is less than the mode threshold, the switching device operates in the first mode, otherwise, the switching device operates in the second mode.

[0050] In one embodiment, the load feedback signal characterizes the current flowing through the switching device. The mode threshold corresponds to the rated current of the SiC MOSFET device at a junction temperature of 100 °C. In one embodiment, the mode threshold includes a hysteresis upper limit and a hysteresis lower limit. When the load current flowing through the switching device is less than the first multiple of the rated current of the SiC MOSFET device at a junction temperature of 100 °C, the load feedback signal is less than the hysteresis lower limit of the mode threshold, and the switching device operates in the first mode. When the load current flowing through the switching device is greater than the second multiple of the rated current of the SiC MOSFET device at a junction temperature of 100 °C, the load feedback signal is greater than the hysteresis upper limit of the mode threshold, and the switching device operates in the second mode. The first multiple is less than the second multiple. In one embodiment, the first multiple is 1.4 times and the second multiple is 1.5 times. In some embodiments, the SiC MOSFET device includes a plurality of parallel-connected SiC MOSFET devices. In this case, the rated current of the SiC MOSFET device at a junction temperature of 100 °C refers to the sum of the rated currents of the plurality of parallel-connected SiC MOSFET devices at a junction temperature of 100 °C. In one embodiment, the load feedback signal can be the current value flowing through the switching device, and the hysteresis lower limit and the hysteresis upper limit of the mode threshold respectively include the first multiple and the second multiple of the rated current of the SiC MOSFET device at a junction temperature of 100 °C. In one embodiment, the load feedback signal is proportional to the current value flowing through the switching device. Accordingly, the hysteresis lower limit and the hysteresis upper limit of the mode threshold are respectively proportional to the first multiple and the second multiple of the rated current of the SiC MOSFET device at a junction temperature of 100 °C.

[0051] In one embodiment, the load feedback signal characterizes the junction temperature of the SiC MOSFET device, and the mode threshold corresponds to the junction temperature threshold of the SiC MOSFET device. In one embodiment, the mode threshold includes a hysteresis upper limit and a hysteresis lower limit. When the junction temperature of the SiC MOSFET device is less than the first temperature, the load feedback signal is less than the hysteresis lower limit of the mode threshold, indicating that the junction temperature of the SiC MOSFET device is relatively small, and the switching device operates in the first mode. When the junction temperature of the SiC MOSFET device is greater than the second temperature, the load feedback signal is greater than the hysteresis upper limit of the mode threshold, indicating that the junction temperature of the SiC MOSFET device is relatively large, and the switching device operates in the second mode. The first temperature is less than the second temperature. In one embodiment, the first temperature is 140 °C and the second temperature is 150 °C. In some embodiments, the SiC MOSFET device includes a plurality of parallel SiC MOSFET devices. In this case, the junction temperature of the SiC MOSFET device refers to the junction temperature of any one of the SiC MOSFET devices. In one embodiment, the load feedback signal can be the junction temperature of the SiC MOSFET device, and the hysteresis lower limit and upper limit of the mode threshold include the first temperature and the second temperature respectively. In one embodiment, the load feedback signal is proportional to the junction temperature of the SiC MOSFET device. Correspondingly, the hysteresis lower limit and upper limit of the mode threshold are proportional to the first temperature and the second temperature respectively. To a certain extent, the junction temperature of the SiC MOSFET device also reflects the size of its load. Generally speaking, the higher the junction temperature of the SiC MOSFET device, the greater the corresponding load. The size of the SiC MOSFET device is generally relatively small, and its heat dissipation capacity is limited. Therefore, in some embodiments of the present application, when the load of the switching device increases, to prevent the junction temperature of the SiC MOSFET device from being too high, resulting in device damage or a decrease in current conduction ability, the drive circuit controls the SiC MOSFET device and the silicon-based IGBT device to enter the second mode. When it is necessary to turn off the switching device, the SiC MOSFET device and the silicon-based IGBT device are turned off simultaneously, so that the silicon-based IGBT device shares part of the turn-off loss, reduces the turn-off loss of the SiC MOSFET device, and reduces its heat generation. In one embodiment, when the junction temperature of the SiC MOSFET device exceeds 150 °C, the drive circuit controls the switching device to enter the second mode.

[0052] In one embodiment, the load feedback signal includes the current flowing through the switching device and the junction temperature of the SiC MOSFET device. Accordingly, the mode threshold includes a lower hysteresis limit and an upper hysteresis limit corresponding to the current flowing through the switching device, and a lower hysteresis limit and an upper hysteresis limit corresponding to the junction temperature of the SiC MOSFET device. When the current flowing through the switching device is less than a first multiple of the rated current of the SiC MOSFET device at a junction temperature of 100 °C, and the junction temperature of the SiC MOSFET device is less than a first temperature, the switching device operates in a first mode. When the current flowing through the switching device is greater than a second multiple of the rated current of the SiC MOSFET device at a junction temperature of 100 °C or when the junction temperature of the SiC MOSFET device is greater than a second temperature, the switching device operates in a second mode. The first multiple is less than the second multiple, and the first temperature is less than the second temperature.

[0053] In the above embodiments of the present application, the SiC MOSFET device can also be replaced with other wide bandgap material MOSFET devices, such as MOSFET devices made of other wide bandgap materials such as GaN (Gallium Nitride) MOSFET devices. In one embodiment, the first multiple is 1.4 times, the second multiple is 1.5 times, the first temperature T1 is 140 °C, and the second temperature is 150 °C.

[0054] It should be understood that in the present application, "at least one (item)" means one or more, and "a plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships can exist. For example, "A and / or B" can mean: only A exists, only B exists, and both A and B exist at the same time. Among them, A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after. "At least one (item) of the following" or its similar expression refers to any combination of these items, including any combination of single item (item) or plural items (items). For example, at least one (item) of a, b, or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0055] The above are only the preferred embodiments of the present application, and do not impose any formal restrictions on the present application. Although the present application has been disclosed above with the preferred embodiments, it is not intended to limit the present application. Any person skilled in the art can make many possible changes and modifications to the technical solution of the present application, or modify it into an equivalent embodiment with equivalent changes, without departing from the scope of the technical solution of the present application. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still fall within the scope of the protection of the technical solution of the present application.

Claims

1. A power semiconductor device, comprising: A switching device including a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel; as well as A drive circuit receives a load feedback signal, controls the switch device to operate in a first mode or a second mode based on the load feedback signal, and provides a first drive signal and a second drive signal for driving the wide bandgap material MOSFET device and the silicon-based IGBT device, respectively, wherein the drive circuit is configured to: When the switch device operates in the first mode, the drive circuit controls the silicon-based IGBT device to be turned off before the wide-bandgap material MOSFET device; as well as When the switch device operates in the second mode, the drive circuit controls the silicon-based IGBT device and the wide bandgap material MOSFET device to be turned off simultaneously.

2. The power semiconductor device according to claim 1, wherein: When the driving circuit controls the silicon-based IGBT device to turn off before the wide-bandgap material MOSFET device, the turn-off time difference between the silicon-based IGBT device and the wide-bandgap material MOSFET device is between 0.3μS and 1.5μS.

3. A power semiconductor device, comprising: A switching device including a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel; as well as A drive circuit receives a load feedback signal, controls the switch device to operate in a first mode or a second mode based on the load feedback signal, and provides a first drive signal and a second drive signal for driving a wide bandgap material MOSFET device and a silicon-based IGBT device, respectively, wherein the drive circuit is configured to: When the switch device operates in the first mode, the drive circuit controls the silicon-based IGBT device to be turned off before the wide bandgap material MOSFET device, and the turn-off time difference between the two is between 0.3 μS and 1.5 μS; and When the switch device operates in the second mode, the drive circuit controls the silicon-based IGBT device to be turned off before the wide-bandgap material MOSFET device, and the turn-off time difference between the two is within 0.1 μS.

4. The power semiconductor device according to any one of claims 1 or 3, wherein: The driving circuit is configured to, in at least one switching cycle: When the switch device operates in the first mode, the drive circuit controls the silicon-based IGBT device and the wide bandgap material MOSFET device to be turned on simultaneously; and When the switch device operates in the second mode, the drive circuit controls the silicon-based IGBT device and the wide bandgap material MOSFET device to be turned on simultaneously.

5. The power semiconductor device according to any one of claims 1 or 3, wherein: The driving circuit is configured to, in at least one switching cycle: When the switch device operates in the first mode, the drive circuit controls the wide bandgap material MOSFET device to be turned on before the silicon-based IGBT device; and When the switch device operates in the second mode, the drive circuit controls the wide bandgap material MOSFET device to be turned on before the silicon-based IGBT device.

6. The power semiconductor device according to claim 5, wherein: The turn-on time difference between the wide bandgap material MOSFET device and the silicon-based IGBT device is within 0.1 μS.

7. The power semiconductor device according to any one of claims 1 or 3, wherein the drive circuit also receives an overcurrent detection signal, and based on the overcurrent detection signal, the drive circuit simultaneously turns off the wide bandgap material MOSFET device and the silicon-based IGBT device.

8. The power semiconductor device according to any one of claims 1 or 3, wherein the drive circuit also receives a short-circuit detection signal, and based on the short-circuit detection signal, the drive circuit simultaneously turns off the wide bandgap material MOSFET device and the silicon-based IGBT device.

9. The power semiconductor device according to any one of claims 1 or 3, wherein the load feedback signal represents a current flowing through the switching device, wherein: When the current flowing through the switch device is less than a first multiple of the rated current of the wide bandgap material MOSFET device at a junction temperature of 100° C., the switch device operates in a first mode; as well as When the current flowing through the switch device is greater than a second multiple of the rated current of the wide bandgap material MOSFET device at a junction temperature of 100° C., the switch device operates in a second mode, and the first multiple is smaller than the second multiple.

10. The power semiconductor device according to any one of claims 1 or 3, wherein the load feedback signal represents the junction temperature of the wide bandgap material MOSFET device, wherein: When the junction temperature of the wide bandgap material MOSFET device is less than a first temperature, the switch device operates in a first mode; as well as When the junction temperature of the wide bandgap material MOSFET device is greater than a second temperature, the switch device operates in a second mode, and the first temperature is less than the second temperature.

11. The power semiconductor device according to any one of claims 1 or 3, wherein the load feedback signal represents the current flowing through the power semiconductor device and the junction temperature of the wide bandgap material MOSFET device, wherein: When the current flowing through the switch device is less than a first multiple of the rated current of the wide bandgap material MOSFET device at a junction temperature of 100° C. and the junction temperature of the wide bandgap material MOSFET device is less than a first temperature, the switch device operates in a first mode; as well as When the current flowing through the switching device is greater than the second multiple of the rated current of the wide bandgap material MOSFET device at a junction temperature of 100°C or when the junction temperature of the wide bandgap material MOSFET device is greater than the second temperature, the switching device operates in a second mode, the first multiple is less than the second multiple, and the first temperature is less than the second temperature.

12. A method for controlling a switch device, wherein the switch device comprises a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel, the method comprising: In at least one switching cycle, When the switch device operates in the first mode, the silicon-based IGBT device is controlled to be turned off before the wide bandgap material MOSFET device; as well as When the switch device operates in the second mode, the silicon-based IGBT device and the wide bandgap material MOSFET device are controlled to be turned off simultaneously.

13. The switch device control method according to claim 12, wherein: When the silicon-based IGBT device is turned off before the wide bandgap material MOSFET device, the turn-off time difference between the silicon-based IGBT device and the wide bandgap material MOSFET device is between 0.3 μS and 1.5 μS.

14. A method for controlling a switch device, wherein the switch device comprises a wide bandgap material MOSFET device and a silicon-based IGBT device connected in parallel, the method comprising: In at least one switching cycle, When the switch device operates in the first mode, the silicon-based IGBT device is controlled to be turned off before the wide bandgap material MOSFET device, and the turn-off time difference is between 0.3 μS and 1.5 μS; and When the switch device operates in the second mode, the silicon-based IGBT device is controlled to be turned off before the wide bandgap material MOSFET device, and the turn-off time difference is within 0.1 μS.

15. The switch device control method according to any one of claims 12 or 14, further comprising: When the switch device operates in the first mode, the silicon-based IGBT device and the wide bandgap material MOSFET device are controlled to be turned on simultaneously; as well as When the switch device operates in the second mode, the silicon-based IGBT device and the wide bandgap material MOSFET device are controlled to be turned on simultaneously.

16. The switch device control method according to any one of claims 12 or 14, wherein: When the switch device operates in the first mode, the wide bandgap material MOSFET device is controlled to be turned on before the silicon-based IGBT device; as well as When the switch device operates in the second mode, the wide bandgap material MOSFET device is controlled to be turned on before the silicon-based IGBT device.

17. The switch device control method according to claim 16, wherein: The turn-on time difference between the wide bandgap material MOSFET device and the silicon-based IGBT device is within 0.1 μS.

18. The switch device control method according to any one of claims 12 or 14, further comprising the drive circuit simultaneously turning off the wide bandgap material MOSFET device and the silicon-based IGBT device based on the overcurrent detection signal.

19. The method for controlling a switch device according to any one of claims 12 or 14, further comprising determining whether the switch device operates in the first mode or the second mode based on a load feedback signal, wherein the load feedback signal represents a current flowing through the switch device, wherein: When the current flowing through the switch device is less than a first multiple of the rated current of the wide bandgap material MOSFET device at a junction temperature of 100° C., the switch device operates in a first mode; as well as When the current flowing through the switch device is greater than a second multiple of the rated current of the wide bandgap material MOSFET device at a junction temperature of 100° C., the switch device operates in a second mode, and the first multiple is smaller than the second multiple.

20. The method for controlling a switch device according to any one of claims 12 or 14, further comprising determining whether the switch device operates in the first mode or the second mode based on a load feedback signal, wherein the load feedback signal represents a junction temperature of the wide bandgap material MOSFET device, wherein: When the junction temperature of the wide bandgap material MOSFET device is less than a first temperature, the switch device operates in a first mode; as well as When the junction temperature of the wide bandgap material MOSFET device is greater than a second temperature, the switch device operates in a second mode, and the first temperature is less than the second temperature.

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