Perovskite solar cell and preparation method and application thereof

Abstract

The invention provides a perovskite solar cell and a preparation method and application thereof, the perovskite solar cell comprises an anode conductive substrate, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, a buffer layer and a conductive cathode, the passivation layer comprises a metal oxide, the conductive cathode comprises a transparent conductive oxide layer and a metal electrode arranged on the transparent conductive oxide layer. According to the perovskite solar cell provided by the invention, through interface engineering, a stable metal oxide is introduced between the perovskite layer and the electron transport layer to serve as a passivation layer, the surface of the perovskite thin film is passivated by utilizing a field passivation effect, and a transparent conductive oxide / metal composite electrode structure is prepared, so that the perovskite solar cell is obtained. The stability of the device is further improved on the basis of ensuring the photoelectric conversion efficiency of the perovskite device; in addition, the preparation method is simple and suitable for large-scale application.

Description

Technical Field

[0001] The present invention belongs to the field of solar cells, and relates to a perovskite solar cell, a preparation method thereof and an application thereof. Background Art

[0002] Perovskite semiconductor materials have been favored by many scientific research scholars due to their advantages of high light absorption coefficient, adjustable band gap, low defect state density, small exciton binding energy, long carrier diffusion length and simple preparation process. However, a large number of defects in the perovskite layer will cause the decomposition of the hole transport layer (HTL) and the electron transport layer (ETL) in the perovskite device (PSC), thereby affecting the stability and efficiency of the device.

[0003] Through continuous exploration and innovation by scientific research personnel, introducing stable transport layers, optimizing perovskite materials, interfacial modification, using new electrodes and device configurations, and improving the device packaging process have all had a positive effect on improving the stability of PSCs. Currently, most interfacial engineering and additive engineering use organic substances or organic ammonium salts, etc.

[0004] For example, CN118870939A discloses a method for in-situ generating a two-dimensional / three-dimensional heterostructure on a perovskite layer. By introducing a functionalized ammonium salt as a perovskite layer modification material and spin-coating it on a three-dimensional perovskite light-absorbing layer, a two-dimensional / three-dimensional heterojunction structure with a passivation modification effect will be formed during the annealing process, thereby improving the stability of the perovskite solar cell; CN113964273A discloses a compound, a perovskite thin-film solar cell and a preparation method thereof. By introducing a halogenated fused heterocyclic ammonium salt between the perovskite light-absorbing layer and the transport layer, the defects on the surface of the perovskite absorbing layer are passivated, and the photoelectric conversion efficiency and stability of the perovskite battery are improved.

[0005] However, although the above-mentioned passivation layers can optimize the interface to a certain extent or make the structure of the perovskite more stable, the organic substances themselves are also factors affecting the stability of the perovskite. Therefore, how to introduce a passivation layer that has as little negative impact as possible on the performance of the original perovskite battery is an urgent problem to be solved. Summary of the Invention

[0006] Aiming at the deficiencies of the existing technology, the purpose of the present invention is to provide a perovskite solar cell, a preparation method thereof and an application thereof. The perovskite solar cell provided by the present invention introduces a stable metal oxide as a passivation layer between the perovskite layer and the electron transport layer through interfacial engineering, passivates the surface of the perovskite thin film by using the field passivation effect, and further improves the stability of the device on the basis of ensuring the photoelectric conversion efficiency of the perovskite device by preparing a transparent conductive oxide / metal composite electrode structure; moreover, the preparation method is simple and suitable for large-scale application.

[0007] To achieve the object of the present invention, the following technical solutions are adopted in the present invention:

[0008] In a first aspect, the present invention provides a perovskite solar cell, which includes an anodic conductive substrate, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, a buffer layer, and a conductive cathode. The passivation layer includes a metal oxide, and the conductive cathode includes a transparent conductive oxide layer and a metal electrode disposed on the transparent conductive oxide layer.

[0009] It should be noted that the present invention is also applicable to crystalline silicon / perovskite tandem cells.

[0010] In the present invention, by introducing a metal oxide between the perovskite layer and the electron transport layer, the surface of the perovskite thin film is passivated by the field passivation effect to reduce interface recombination; by preparing a transparent conductive oxide / metal composite electrode structure and preparing a buffer layer above the electron transport layer, the layers cooperate with each other to effectively block the interlayer diffusion and reaction of ions, thereby achieving the effect of further improving the device stability on the basis of ensuring the photoelectric conversion efficiency of the perovskite device.

[0011] The following are the preferred technical solutions of the present invention, but do not limit the technical solutions provided by the present invention. Through the following preferred technical solutions, the technical object and beneficial effect of the present invention can be better achieved and realized.

[0012] Preferably, the metal oxide includes any one or a combination of at least two of aluminum oxide, tin oxide, silicon oxide, tungsten oxide, or titanium oxide, and is further preferably at least including aluminum oxide.

[0013] In the present invention, by using aluminum oxide as the passivation layer, due to its field passivation effect and quantum tunneling effect, it is beneficial to the extraction of electrons, blocks holes, and has the effect of passivating the surface of the perovskite. Since aluminum oxide itself has relatively high chemical stability, the stability of the perovskite device can be further improved.

[0014] Preferably, the thickness of the passivation layer is 0.5 - 2 nm, such as 0.5 nm, 0.7 nm, 0.9 nm, 1.0 nm, 1.2 nm, 1.4 nm, 1.6 nm, 1.8 nm, or 2.0 nm, etc., but is not limited to the listed values, and other unlisted values within this numerical range are equally applicable.

[0015] Preferably, the transparent conductive oxide layer includes any one of ITO, IZO, or IWO.

[0016] It can be understood that ITO, IZO, and IWO refer to indium tin oxide, indium zinc oxide, and indium tungsten oxide, respectively.

[0017] Preferably, the thickness of the transparent conductive oxide is 80 to 500 nm, such as 80 nm, 100 nm, 200 nm, 300 nm, 400 nm or 500 nm, etc., but not limited to the listed values, and other unlisted values within this range are equally applicable.

[0018] In the present invention, the thickness of the passivation layer and / or the transparent conductive oxide can be adjusted according to actual needs. By controlling the thickness of the passivation layer to be 0.5 to 2 nm and the thickness of the transparent conductive oxide to be 80 to 500 nm, a better balance between the perovskite photoelectric conversion efficiency and stability can be achieved.

[0019] Preferably, the metal electrode includes any one of Au, Ag, Cu or Pt.

[0020] Preferably, the thickness of the metal electrode is 80 to 170 nm, such as 80 nm, 100 nm, 130 nm, 140 nm, 150 nm, 160 nm or 170 nm, etc., but not limited to the listed values, and other unlisted values within this range are equally applicable.

[0021] Preferably, the anode conductive substrate includes a substrate and a conductive anode provided on the substrate.

[0022] Preferably, the substrate includes any one of glass, silicon wafer, polyethylene terephthalate (PET) or polyimide (PI).

[0023] Preferably, the conductive anode includes any one of ITO, FTO or Ag nanowires.

[0024] It can be understood that FTO refers to fluorine-doped tin oxide.

[0025] Preferably, the hole transport layer includes NiO x , Cu 2 O, P 3 HT, PTAA or any one or at least two combinations of Spiro-OMeTAD.

[0026] It can be understood that P 3 HT, PTAA or Spiro-OMeTAD refer to poly(3-hexylthiophene), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, respectively.

[0027] Preferably, the thickness of the hole transport layer is 5 to 200 nm, such as 5 nm, 20 nm, 50 nm, 100 nm, 150 nm, or 200 nm, etc., but is not limited to the listed values, and other unlisted values within this numerical range are equally applicable.

[0028] Preferably, the perovskite layer comprises an ABX 3 type perovskite.

[0029] Preferably, A in the ABX 3 type perovskite includes any one or a combination of at least two of Cs + , Ru + , MA + or FA + , B in the ABX 3 type perovskite includes any one or a combination of at least two of Pb 2+ or Sn 2+ , and X in the ABX 3 type perovskite includes any one or a combination of at least two of Br - , I - or Cl - .

[0030] Preferably, the thickness of the perovskite layer is 300 to 800 nm, such as 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 600 nm, 700 nm, or 800 nm, etc., but is not limited to the listed values, and other unlisted values within this numerical range are equally applicable.

[0031] Preferably, the electron transport layer includes any one or a combination of at least two of C 60 , TiO 2 , SnO 2 , ZnO or PC61BM.

[0032] Preferably, the thickness of the electron transport layer is 10 to 30 nm, such as 10 nm, 15 nm, 20 nm, 25 nm, or 30 nm, etc., but is not limited to the listed values, and other unlisted values within this numerical range are equally applicable.

[0033] Preferably, the buffer layer includes SnO 2 .

[0034] Preferably, the thickness of the buffer layer is 10 to 20 nm, such as 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, or 20 nm, etc., but is not limited to the listed values, and other unlisted values within this numerical range are equally applicable.

[0035] Second aspect, the present invention provides a method for preparing a perovskite solar cell as described in the first aspect, the preparation method comprising: sequentially preparing a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, a buffer layer, and a conductive cathode on an anodic conductive substrate;

[0036] The passivation layer comprises a metal oxide, and the conductive cathode comprises a transparent conductive oxide layer and a metal electrode disposed on the transparent conductive oxide layer.

[0037] As a preferred technical solution, the preparation method comprises the following steps:

[0038] Treat the anodic conductive substrate according to the steps of cleaning with deionized water, drying, and plasma cleaning, and sequentially prepare a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a conductive cathode on the treated anodic conductive substrate;

[0039] The preparation methods of the hole transport layer, the perovskite layer, the electron transport layer, the buffer layer, and the conductive cathode each independently comprise any one of a coating method, an inkjet printing method, a vacuum thermal deposition method, an electron beam evaporation method, a magnetron sputtering method, or an atomic layer deposition method.

[0040] Third aspect, the present invention further provides a perovskite solar cell module, the perovskite solar cell module comprising the perovskite solar cell as described in the first aspect.

[0041] The present invention does not limit the preparation method of the perovskite solar module. Exemplarily, the present invention provides a preparation method, comprising the following steps:

[0042] (1) Use laser scribing to etch the anodic conductive substrate to prepare the first etching groove P 1 .

[0043] (2) Scrub the anodic conductive substrate with deionized water, and then perform ultrasonic treatment on the scrubbed anodic conductive substrate with deionized water, acetone, and ethanol in sequence.

[0044] (3) Deposit a hole transport layer on the treated anodic conductive substrate by atomic layer deposition (ALD).

[0045] (4) Prepare a perovskite precursor solution, and then prepare a perovskite thin film by slot coating as the perovskite layer.

[0046] (5) Deposit a metal oxide on the perovskite layer by ALD as the passivation layer.

[0047] (6) Evaporate a layer of electron transport layer on the passivation layer by thermal evaporation.

[0048] (7) Deposit a layer of buffer layer on the electron transport layer by ALD.

[0049] (8) Form a second etching groove P that penetrates the hole transport layer, the perovskite layer, the electron transport layer, the passivation layer, and the hole transport layer by laser scribing. 2 .

[0050] (9) Deposit a transparent conductive oxide layer on the buffer layer by magnetron sputtering.

[0051] (10) Evaporate a layer of metal on the transparent conductive oxide layer by thermal evaporation as a composite electrode.

[0052] (11) Perform laser scribing again to form a third etching groove P that penetrates the cathode electrode layer. 3 , obtain a sub-cell, and connect all the sub-cells in series to obtain a perovskite solar module.

[0053] Compared with the prior art, the present invention has the following beneficial effects:

[0054] The perovskite solar cell provided by the present invention introduces a stable metal oxide as a passivation layer between the perovskite layer and the electron transport layer through interface engineering, passivates the surface of the perovskite thin film by using the field passivation effect, and further improves the stability of the device by preparing a transparent conductive oxide / metal composite electrode structure while ensuring the photoelectric conversion efficiency of the perovskite device; moreover, the preparation method is simple and suitable for large-scale application. Description of the Drawings

[0055] Figure 1 It is a schematic structural diagram of a sub-cell in the perovskite solar module in Example 1.

[0056] Figure 2 It is a schematic structural diagram of a sub-cell in the perovskite solar module in Comparative Example 1.

[0057] Figure 3 It is a schematic structural diagram of a sub-cell in the perovskite solar module in Comparative Example 2.

[0058] Figure 4 It is a graph of the photoelectric conversion efficiency of the perovskite solar module in Example 1 and Comparative Examples 1-2 changing with time.

[0059] In the figure: 1 - substrate; 2 - conductive anode; 3 - hole transport layer; 4 - perovskite layer; 5 - passivation layer; 6 - electron transport layer; 7 - buffer layer; 8 - transparent conductive oxide layer; 9 - metal electrode. Detailed Embodiments

[0060] The technical solutions of the present invention will be further described below through specific embodiments. Those skilled in the art should understand that the embodiments are only for helping to understand the present invention and should not be regarded as specific limitations on the present invention.

[0061] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs; the terms used herein are for the purpose of describing specific embodiments only and are not intended to limit this application; the terms "comprising" and "having" and any variations thereof in the specification and claims of this application and the above description of the drawings are intended to cover non-exclusive inclusion.

[0062] Example 1

[0063] This example provides a perovskite solar module, which is composed of 43 sub-cells connected in series, with a pore area of 800 cm 2 , and the structure of each sub-cell is as Figure 1 shown, and successively includes a substrate 1, a conductive anode 2, a hole transport layer 3, a perovskite layer 4, a passivation layer 5, an electron transport layer 6, a buffer layer 7, a transparent conductive oxide layer 8, and a metal electrode 9 from bottom to top; wherein, the materials of each layer respectively correspond to a glass substrate, FTO, NiO, Cs 0.05 MA 0.05 FA 0.9 Pb(I 0.95 Br 0.05 ) 3 , Al 2 O 3 , C 60 , SnO 2 , IZO, and Cu. The preparation method of this perovskite solar module includes the following steps:

[0064] (1) Use laser scribing on the FTO glass substrate to prepare the first etching groove P 1 .

[0065] (2) Scrub the FTO glass substrate with deionized water, and then ultrasonically clean the scrubbed FTO glass substrate with deionized water, acetone, and ethanol for 15 minutes each.

[0066] (3) Deposit a layer of about 20 nm thick NiO on the treated FTO glass substrate as the hole transport layer.

[0067] (4) Weigh Cs 0.05 MA 0.05 FA 0.9 Pb(I 0.95 Br 0.05 ) 3 in the glove box filled with nitrogen according to the molar ratio, and weigh CsI, FAI, MAI, PbI 2 and PbBr 2, and then dissolve it in a solvent of DMF:DMSO = 9:1 to prepare a precursor solution with a concentration of 1.0 mol / L; subsequently, a perovskite film with a thickness of about 400 nm is prepared by the slot-die coating method as the perovskite layer.

[0068] (5) Deposit a layer of Al with a thickness of about 1 nm on the perovskite layer by ALD method 2 O 3 as the passivation layer.

[0069] (6) Evaporate a layer of C with a thickness of about 20 nm on the Al 2 O 3 passivation layer by thermal evaporation method as the electron transport layer. 60 as the electron transport layer.

[0070] (7) Deposit a layer of SnO with a thickness of about 15 nm on the C 60 electron transport layer by ALD method as the buffer layer. 2 film as the buffer layer.

[0071] (8) Use laser scribing to form the second etching groove P that penetrates the hole transport layer, perovskite layer, electron transport layer, passivation layer and hole transport layer 2 .

[0072] (9) Deposit a layer of IZO with a thickness of about 100 nm on the SnO 2 buffer layer by magnetron sputtering method.

[0073] (10) Evaporate a layer of Cu with a thickness of about 150 nm on the IZO layer by thermal evaporation method as the composite electrode.

[0074] (11) Laser scribe again to form the third etching groove P that penetrates the cathode electrode layer 3 , and obtain the sub-cell, and connect all the sub-cells in series to obtain the perovskite solar module.

[0075] Example 2

[0076] This example provides a perovskite solar module, which is composed of 43 sub-cells connected in series, with a pore area of 800 cm 2 , and each sub-cell sequentially includes a substrate, a conductive anode, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, a buffer layer, a transparent conductive oxide layer and a metal electrode from bottom to top; among them, the materials of each layer respectively correspond to a glass substrate, ITO, P 3 HT, Cs 0.05 MA 0.05 FA 0.9 Sn(I 0.95 Br 0.05 ) 3 , SnO 2 , C 60, SnO 2 , ITO and Au. The preparation method of the perovskite solar cell module includes the following steps:

[0077] (1) Prepare the first etching groove P by laser scribing the ITO glass substrate 1 .

[0078] (2) Scrub the ITO glass substrate with deionized water, and then ultrasonically clean the scrubbed ITO glass substrate with deionized water, acetone and ethanol for 15 minutes each

[0079] (3) Deposit a layer of about 5 nm thick P 3 HT as the hole transport layer

[0080] (4) Weigh Cs 0.05 MA 0.05 FA 0.9 Sn(I 0.95 Br 0.05 ) 3 in the perovskite layer according to the molar ratio, weigh CsI, FAI, MAI, SnI 2 and SnBr 2 , then dissolve them in a solvent of DMF:DMSO = 9:1 to prepare a precursor solution with a concentration of 0.5 mol / L; subsequently, use the slot-die coating method to prepare a perovskite thin film with a thickness of about 300 nm as the perovskite layer

[0081] (5) Deposit a layer of about 0.5 nm thick SnO 2 as the passivation layer by ALD

[0082] (6) Evaporate a layer of about 20 nm thick TiO 2 O 3 on the Al 2 passivation layer by thermal evaporation as the electron transport layer

[0083] (7) Deposit a layer of about 10 nm thick SnO 2 thin film as the buffer layer on the TiO 2 electron transport layer by ALD

[0084] (8) Use laser scribing to form the second etching groove P that penetrates the hole transport layer, perovskite layer, electron transport layer, passivation layer and hole transport layer 2 .

[0085] (9) Deposit a layer of about 80 nm thick ITO layer on the SnO 2 buffer layer by magnetron sputtering

[0086] (10) A composite electrode of about 80 nm thick Au is deposited on the ITO layer by thermal evaporation method.

[0087] (11) Laser scribing is performed again to form a third etching groove P penetrating the cathode electrode layer 3 , and sub-cells are obtained. All the sub-cells are connected in series to obtain a perovskite solar module.

[0088] Example 3

[0089] This example provides a perovskite solar module, which is composed of 43 sub-cells connected in series, and the aperture area is 800 cm 2 . Each sub-cell sequentially includes a substrate, a conductive anode, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, a buffer layer, a transparent conductive oxide layer, and a metal electrode from bottom to top; among them, the materials of each layer respectively correspond to a silicon substrate, FTO, PTAA, Ru 0.05 MA 0.05 FA 0.9 Pb(I 0.95 Cl 0.05 ) 3 , Al 2 O 3 , PC61BM, SnO 2 , IWO and Ag. The preparation method of this perovskite solar module includes the following steps:

[0090] (1) Use laser scribing to prepare the first etching groove P on the FTO silicon substrate 1 .

[0091] (2) Scrub the FTO silicon substrate with deionized water, and then ultrasonically clean the scrubbed FTO silicon substrate with deionized water, acetone, and ethanol for 15 minutes each.

[0092] (3) Deposit a layer of about 20 nm thick PTAA as the hole transport layer on the treated FTO silicon substrate.

[0093] (4) Weigh Ru 0.05 MA 0.05 FA 0.9 Pb(I 0.95 Cl 0.05 ) 3 in the molar ratios in 2 and PbCl 2 , and then dissolve them in a solvent of DMF:DMSO = 9:1 to prepare a precursor solution with a concentration of 1.1 mol / L; subsequently, a perovskite thin film with a thickness of about 800 nm is prepared by slot-die coating method as the perovskite layer.

[0094] (5) Deposit a layer of Al with a thickness of about 2 nm on the perovskite layer by ALD method. 2 O 3 as the passivation layer.

[0095] (6) Evaporate a layer of PC61BM with a thickness of about 30 nm on the Al 2 O 3 passivation layer by thermal evaporation method as the electron transport layer.

[0096] (7) Deposit a layer of SnO with a thickness of about 20 nm on the PC61BM electron transport layer by ALD method 2 as the buffer layer.

[0097] (8) Use laser scribing to form the second etching groove P that penetrates the hole transport layer, perovskite layer, electron transport layer, passivation layer and hole transport layer 2 .

[0098] (9) Deposit a layer of IWO layer with a thickness of about 500 nm on the SnO 2 buffer layer by magnetron sputtering method.

[0099] (10) Evaporate a layer of Ag with a thickness of about 170 nm on the IWO layer by thermal evaporation method as the composite electrode.

[0100] (11) Laser scribe again to form the third etching groove P that penetrates the cathode electrode layer 3 , and obtain the sub-cell. Connect all the sub-cells in series to get the perovskite solar module.

[0101] Example 4

[0102] The difference between this example and Example 1 is that in step (5), a layer of Al with a thickness of about 0.3 nm is deposited on the perovskite layer by ALD method 2 O 3 as the passivation layer.

[0103] The remaining preparation methods and parameters are the same as those in Example 1.

[0104] Example 5

[0105] The difference between this example and Example 1 is that in step (5), a layer of Al with a thickness of about 3 nm is deposited on the perovskite layer by ALD method 2 O 3 as the passivation layer.

[0106] The remaining preparation methods and parameters are the same as those in Example 1.

[0107] Example 6

[0108] The difference between this embodiment and Embodiment 1 is that in step (9), a magnetron sputtering method is used to deposit a layer of IZO layer with a thickness of about 60 nm on the SnO 2 buffer layer.

[0109] The remaining preparation methods and parameters are the same as those in Embodiment 1.

[0110] Embodiment 7

[0111] The difference between this embodiment and Embodiment 1 is that in step (9), a magnetron sputtering method is used to deposit a layer of IZO layer with a thickness of about 600 nm on the SnO 2 buffer layer.

[0112] The remaining preparation methods and parameters are the same as those in Embodiment 1.

[0113] Comparative Example 1

[0114] The difference between this comparative example and Embodiment 1 is that as Figure 2 shown, each sub-cell sequentially includes a substrate 1, a conductive anode 2, a hole transport layer 3, a perovskite layer 4, an electron transport layer 6, a buffer layer 7, and a metal electrode 9 from bottom to top; among them, the materials of each layer respectively correspond to a glass substrate, FTO, NiO, Cs 0.05 MA 0.05 FA 0.9 Pb(I 0.95 Br 0.05 ) 3 , C 60 , SnO 2 , and Cu. Steps (5) and (9) are not carried out in the preparation method.

[0115] The remaining preparation methods and parameters are the same as those in Embodiment 1.

[0116] Comparative Example 2

[0117] The difference between this comparative example and Embodiment 1 is that as Figure 3 shown, each sub-cell sequentially includes a substrate 1, a conductive anode 2, a hole transport layer 3, a perovskite layer 4, an electron transport layer 6, a buffer layer 7, a transparent conductive oxide layer 8, and a metal electrode 9 from bottom to top; among them, the materials of each layer respectively correspond to a glass substrate, FTO, NiO, Cs 0.05 MA 0.05 FA 0.9 Pb(I 0.95 Br 0.05 ) 3 , C 60 , SnO 2 , IZO, and Cu. Step (5) is not carried out in the preparation method.

[0118] The remaining preparation methods and parameters are the same as those in Example 1.

[0119] Comparative Example 3

[0120] The difference between this comparative example and Example 1 is that each sub-cell does not include the transparent conductive oxide layer IZO, and step (9) is not carried out in the preparation method.

[0121] The remaining preparation methods and parameters are the same as those in Example 1.

[0122] Comparative Example 4

[0123] The difference between this comparative example and Example 1 is that the material of the passivation layer of each sub-cell is PEAI, and phenethylammonium iodide (PEAI) is used as the passivation layer in step (5) of the preparation method.

[0124] The remaining preparation methods and parameters are the same as those in Example 1.

[0125] Comparative Example 5

[0126] The difference between this comparative example and Example 1 is that each sub-cell does not contain the buffer layer SnO 2 , and step (7) is not carried out during the preparation process;

[0127] The remaining preparation methods and parameters are the same as those in Example 1.

[0128] Performance Test

[0129] Under the test conditions of simulating sunlight in an indoor environment, the perovskite solar modules prepared in Examples 1-7 and Comparative Examples 1-5 were tested. The test results are shown in Table 1 and Figure 4 as follows:

[0130] Table 1

[0131]

[0132]

[0133] From Figure 4 and the data comparison between Examples 1-3 and Comparative Examples 1-5 in Table 1, it can be seen that by introducing a metal oxide between the perovskite layer and the electron transport layer, preparing a transparent conductive oxide / metal composite electrode structure, and preparing a buffer layer above the electron transport layer, the present invention effectively improves the photoelectric conversion efficiency and stability of the perovskite battery through the mutual cooperation of each film layer; in particular, the data of Comparative Example 4 and Comparative Example 5 show that using an organic substance as the passivation layer or not preparing the buffer layer will both cause a significant decline in the performance of the perovskite battery.

[0134] According to the data comparison between Example 1 and Examples 4-7 in Table 1, it can be seen that in the present invention, the thicknesses of the passivation layer and the transparent conductive oxide layer will affect the performance of the perovskite solar cell. By controlling the thickness of the passivation layer within the range of 0.5 to 2 nm and the thickness of the transparent conductive oxide within the range of 80 to 500 nm, a better balance between the perovskite photoelectric conversion efficiency and stability can be achieved.

[0135] The applicant declares that the above description is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by any person skilled in the art within the technical scope disclosed by the present invention fall within the protection scope and the disclosure scope of the present invention.

Claims

1. A perovskite solar cell, characterized in that: The perovskite solar cell includes an anode conductive substrate, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, a buffer layer and a conductive cathode, wherein the passivation layer includes a metal oxide, and the conductive cathode includes a transparent conductive oxide layer and a metal electrode arranged on the transparent conductive oxide layer.

2. The perovskite solar cell according to claim 1, characterized in that The metal oxide includes any one of aluminum oxide, tin oxide, silicon oxide, tungsten oxide or titanium oxide, or a combination of at least two thereof, and more preferably includes at least aluminum oxide; Preferably, the thickness of the passivation layer is 0.5-2 nm.

3. The perovskite solar cell according to claim 1 or 2, characterized in that: The transparent conductive oxide layer includes any one of ITO, IZO or IWO; Preferably, the thickness of the transparent conductive oxide layer is 80 to 500 nm; Preferably, the metal electrode comprises any one of Au, Ag, Cu or Pt; Preferably, the thickness of the metal electrode is 80-170 nm.

4. The perovskite solar cell according to any one of claims 1 to 3, characterized in that: The anode conductive substrate comprises a substrate and a conductive anode disposed on the substrate; Preferably, the substrate comprises any one of glass, silicon wafer, polyethylene terephthalate or polyimide; Preferably, the conductive anode comprises any one of ITO, FTO or Ag nanowires.

5. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: The hole transport layer comprises any one or a combination of at least two of NiOx, Cu2O, P3HT, PTAA or Spiro-OMeTAD; Preferably, the hole transport layer has a thickness of 5 to 200 nm.

6. The perovskite solar cell according to any one of claims 1 to 5, characterized in that: The perovskite layer includes ABX3 type perovskite; Preferably, A in the ABX3 type perovskite includes Cs + 、Ru + 、MA + or FA + Any one or a combination of at least two of the following, wherein B in the ABX3-type perovskite includes Pb 2+ or Sn 2+ Any one or a combination of at least two of the following, wherein X in the ABX3-type perovskite includes Br - ,I - or Cl - Any one or a combination of at least two of the following: Preferably, the thickness of the perovskite layer is 300-800 nm.

7. The perovskite solar cell according to any one of claims 1 to 6, characterized in that: The electron transport layer comprises C 60 , any one of TiO2, SnO2, ZnO or PC61BM or a combination of at least two thereof; Preferably, the thickness of the electron transport layer is 10 to 30 nm; Preferably, the buffer layer comprises SnO2; Preferably, the buffer layer has a thickness of 10-20 nm.

8. A method for preparing a perovskite solar cell according to any one of claims 1 to 7, characterized in that: The preparation method comprises: sequentially preparing a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, a buffer layer and a conductive cathode on an anode conductive substrate; The passivation layer includes a metal oxide, and the conductive cathode includes a transparent conductive oxide layer and a metal electrode disposed on the transparent conductive oxide layer.

9. The method for preparing a perovskite solar cell according to claim 8, characterized in that: The preparation method comprises the following steps: The anode conductive substrate is treated according to the steps of deionized water cleaning, drying, and plasma cleaning, and a hole transport layer, a perovskite layer, an electron transport layer, a buffer layer, and a conductive cathode are sequentially prepared on the treated anode conductive substrate; The preparation methods of the hole transport layer, perovskite layer, electron transport layer, buffer layer and conductive cathode each independently include any one of a coating method, an inkjet printing method, a vacuum thermal deposition method, an electron beam evaporation method, a magnetron sputtering method or an atomic layer deposition method.

10. A perovskite solar cell module, characterized in that: The perovskite solar cell module comprises the perovskite solar cell according to any one of claims 1 to 7.

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