Apparatus for manufacturing display device

Abstract

The apparatus for manufacturing a display device includes: a cavity; a laser module including a plurality of laser generators respectively generating a plurality of original laser beams using a solid material as a medium; the light beam coupling module is used for combining the plurality of original laser beams into a plurality of coupled light beams; the light beam mixing unit is used for converting the plurality of coupled light beams into a plurality of mixed light beams; a micro smoother that causes vibrational motion of the plurality of mixed light beams; an optical module that converts the plurality of mixed beams passing through the micro-smoother into a final laser beam and directs the final laser beam to the cavity; and a sealing box disposed between the optical module and the cavity.

Description

[0001] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2023-0170769, filed on November 30, 2023, the content of which is incorporated herein by reference in its entirety. Technical Field

[0002] Embodiments of the present disclosure relate to an apparatus for manufacturing a display device. Background Art

[0003] With the development of an information-oriented society, the demand for display devices for displaying images is increasing in various fields. The display device may be a display device such as a liquid crystal display, a field emission display, or a light-emitting display. The light-emitting display may include an organic light-emitting display device including an organic light-emitting diode as a light-emitting element or an inorganic light-emitting display device including an inorganic light-emitting diode as a light-emitting element.

[0004] The display device may use thin film transistors to control the emission state and intensity of each pixel. The thin film transistor includes a semiconductor layer, a gate electrode, a source electrode / drain electrode, etc. Polycrystalline silicon (poly-Si), which is a crystallization of amorphous silicon (a-Si), is generally used in the semiconductor layer. One annealing method of crystallizing amorphous silicon (a-Si) into polycrystalline silicon (p-Si) is laser annealing, which includes irradiating amorphous silicon (a-Si) with a laser beam to crystallize it. Summary of the Invention

[0005] Embodiments of the present disclosure provide an apparatus for manufacturing a display device having improved efficiency and reliability of an annealing process.

[0006] However, embodiments of the present disclosure are not limited to the embodiments set forth herein. The above and other features of the embodiments of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0007] According to an embodiment of the present disclosure, an apparatus for manufacturing a display device includes: a chamber; a laser module including a plurality of laser generators that respectively generate a plurality of original laser beams using a solid material as a medium; a beam coupling module that combines the plurality of original laser beams into a plurality of coupled beams; a beam mixing unit that converts the plurality of coupled beams into a plurality of mixed beams; a micro smoother that causes a vibrational motion of the plurality of mixed beams; an optical module that converts the plurality of mixed beams passing through the micro smoother into a final laser beam and guides the final laser beam to the chamber; and a sealing box disposed between the optical module and the chamber.

[0008] In an embodiment, the major axis dimension of the final laser beam may be in the range of approximately 1000 millimeters (mm) to approximately 2000 mm, the minor axis dimension of the final laser beam may be in the range of approximately 95 micrometers (μm) to approximately 110 μm, and the inclined plane dimension of the final laser beam may be in the range of approximately 30 μm to approximately 45 μm.

[0009] In an embodiment, the total laser output power of the laser module may be in the range of approximately 5760 watts (W) to approximately 9000 W, the output power of each of the plurality of laser generators may be in the range of approximately 600 W to approximately 900 W, and the oscillation frequency of each of the plurality of laser generators may be in the range of approximately 5000 hertz (Hz) to approximately 15000 Hz.

[0010] In an embodiment, each of the plurality of original laser beams may be a laser beam in the ultraviolet region, and the wavelength of the plurality of original laser beams may be in the range of approximately 337 nanometers (nm) to approximately 357 nm.

[0011] In an embodiment, the beam coupling module may include: a shutter that receives the plurality of original laser beams; and a photodiode and a beam monitor that monitor the plurality of original laser beams, wherein the operating speed of the shutter may be in the range of approximately 20 milliseconds (ms) to approximately 100 milliseconds.

[0012] In an embodiment, the beam coupling module may include: a scraper unit that generates a plurality of coupled beams and groups the plurality of original laser beams to be included in the plurality of coupled beams; a group telescope unit that adjusts the degree of divergence of the plurality of coupled beams; and a group coupling unit that supplies the plurality of coupled beams to the beam mixing unit.

[0013] In an embodiment, the scraper unit may include a pre-mixer, and the pre-mixer may transmit and reflect the incident plurality of original laser beams at a ratio of 1:1.

[0014] In an embodiment, the beam coupling module may further include a pulse stretcher module disposed between the group coupling unit and the beam mixing unit, and the pulse stretcher module may stretch the pulse duration of the final laser beam.

[0015] In an embodiment, the beam mixing unit may include: a mirror that reflects the plurality of coupled beams incident on the mirror; a first separator that transmits and reflects the plurality of coupled beams at a ratio of 1:1; and a second separator that transmits and reflects the plurality of coupled beams at a ratio of 2:1.

[0016] In an embodiment, the beam mixing unit may generate a plurality of mixed beams by combining the plurality of coupled beams at the same ratio.

[0017] In an embodiment, the micro smoother may provide a driving force to cause the hitting point of the final laser beam to vibrate regularly or irregularly in a direction perpendicular to the scanning direction of the final laser beam.

[0018] In an embodiment, the micro smoother may include at least one selected from the following: a first micro smoother including a telescopic lens; and a second micro smoother including a beam homogenizer.

[0019] In an embodiment, the micro smoother may include: a cover; a floating box disposed in the inner space of the cover in a floating state; and an elastic tube connecting the floating box to the cover.

[0020] In an embodiment, the device may further include: a first section in which the micro smoother is located; a second section in which the cavity is located; and a base frame disposed below the cavity and the micro smoother, wherein the base frame includes a first base disposed in the first section and a second base disposed in the second section, and the first base and the second base are arranged to be spaced apart from each other.

[0021] In an embodiment, the optical module may include a first sub-optical module disposed in the first section and a second sub-optical module disposed in the second section, and the first sub-optical module and the second sub-optical module are arranged to be spaced apart from each other.

[0022] In an embodiment, the sealed box may include: a beam cutter that reflects a part of the final laser beam and transmits the remaining part of the final laser beam; and a beam collector that attenuates or eliminates the energy of this part of the final laser beam reflected from the beam cutter.

[0023] In an embodiment, the beam cutter may include a reflection area that reflects a part of the final laser beam, and the surface of the reflection area includes glass.

[0024] In an embodiment, the beam collector may include: a mirror disposed on the inner surface of the beam collector; and a cooler disposed inside the beam collector.

[0025] In an embodiment, the cavity may include: a gauge that measures the profile or power of the final laser beam; and a measurement aperture disposed on the gauge, wherein the measurement aperture reflects a part of the final laser beam and transmits the remaining part of the final laser beam.

[0026] In an embodiment, the measurement aperture may include: a reflection area that reflects a part of the final laser beam; and a transmission area that transmits the remaining part of the final laser beam, wherein the reflection area may include a high reflection (HR) coating film, and the transmission area may include an anti-reflection (AR) coating film or a hole.

[0027] In the apparatus for manufacturing a display device according to an embodiment of the present disclosure, the efficiency and reliability of an annealing process can be improved.

[0028] However, the effects according to the embodiments of the present disclosure are not limited to the above-exemplified effects, and various other effects are also included herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other features of the embodiments of the present disclosure will become more apparent by referring to the embodiments of the present disclosure described in detail with reference to the accompanying drawings, in which:

[0030] Figure 1 is a plan view of a display device according to an embodiment;

[0031] Figure 2 is a cross-sectional view of a display panel according to an embodiment;

[0032] Figure 3A is a perspective view of an annealing process of a display device according to an embodiment;

[0033] Figure 3B is a cross-sectional view of an annealing process of a display device according to an embodiment;

[0034] Figure 4A is a front view showing the shape of a final laser beam according to an embodiment;

[0035] Figure 4B is a front view cumulatively showing positions where a final laser beam is irradiated when a target substrate moves according to an embodiment;

[0036] Figure 5 is a schematic block diagram of an apparatus for manufacturing a display device according to an embodiment;

[0037] Figure 6 is a perspective view of an apparatus for manufacturing a display device according to an embodiment;

[0038] Figure 7 is a perspective view of a laser module according to an embodiment;

[0039] Figure 8 is a cross-sectional view of a beam coupling module according to an embodiment;

[0040] Figure 9 is a perspective view of a group coupling unit and a pulse expander module according to an embodiment;

[0041] Figure 10 is a schematic diagram showing a path through which a laser beam passes through a beam coupling module and a beam mixing unit according to an embodiment;

[0042] Figure 11is a schematic diagram showing the path of a laser beam passing through a beam mixing unit according to an embodiment;

[0043] Figure 12 is a schematic diagram showing the process of distributing each coupled beam into a mixed beam in a beam mixing unit according to an embodiment;

[0044] Figure 13 is a cross-sectional view showing a beam mixing unit, a micro smoother, an optical module, a sealed box, a cavity, and a base frame according to an embodiment;

[0045] Figure 14 is a perspective view showing a beam mixing unit, a micro smoother, and an optical module according to an embodiment;

[0046] Figure 15 is a cross-sectional view showing a micro smoother according to an embodiment;

[0047] Figure 16 is a perspective view showing a method of operating a micro smoother according to an embodiment;

[0048] Figure 17 is a cross-sectional view showing an optical module, a sealed box, and a cavity according to an embodiment;

[0049] Figure 18 is a cross-sectional view showing a method of operating a beam cutter according to an embodiment;

[0050] Figure 19 is a plan view showing a fixed chuck and a target substrate according to an embodiment;

[0051] Figure 20 is a perspective view showing a profiler, a power meter, and a measurement aperture according to an embodiment;

[0052] Figure 21 is a micrograph showing particles of a polysilicon thin film according to a conventional embodiment;

[0053] Figure 22 is a micrograph showing particles of a polysilicon thin film according to an embodiment;

[0054] Figure 23 is a photograph showing a macroscopic inspection of a polysilicon thin film according to a conventional embodiment; and

[0055] Figure 24 is a photograph showing a macroscopic inspection of a polysilicon thin film according to an embodiment. Detailed Description

[0056] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments of the invention are shown. However, the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout.

[0057] It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or an intervening layer may also be present. In contrast, when an element is referred to as being "directly on" another element, no intervening element is present.

[0058] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, the first element, component, region, layer or section discussed below could be termed the second element, component, region, layer or section without departing from the teachings herein.

[0059] The terms used herein are for the purpose of describing particular embodiments only and are not intended to be limiting. As used herein, "a", "the" and "at least one" do not denote a limitation of quantity and are intended to include both the singular and the plural, unless the context clearly dictates otherwise. Thus, reference to "an" element in a claim followed by reference to "the" element includes one element and a plurality of elements. For example, "element" has the same meaning as "at least one element" unless the context clearly dictates otherwise. "At least one" is not to be construed as limited to "one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It will further be understood that the terms "comprises" and / or its variants or "includes" and / or its variants when used in this specification specify the presence of the stated features, regions, wholes, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and / or groups thereof.

[0060] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another as shown in the figures. It will be understood that the relative terms are intended to cover different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is flipped, an element described as on the "lower" side of other elements will then be oriented on the "upper" side of the other elements. Thus, depending on the particular orientation of the figure, the term "lower" can encompass both the "lower" and "upper" orientations. Similarly, if the device in one of the figures is flipped, an element described as "below" or "beneath" other elements will then be oriented "above" the other elements. Thus, the terms "below" or "beneath" can encompass both the above and below orientations.

[0061] Taking into account the measurements discussed and the errors associated with the measured values of a particular quantity (i.e., the limitations of the measurement system), "about" or "approximate" as used herein includes the stated value and refers to an acceptable deviation range of that particular value as determined by a person of ordinary skill in the art. For example, "about" can refer to within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0062] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by a person of ordinary skill in the art to which this disclosure belongs. It will also be understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and this disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0063] Embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of ideal embodiments. As such, variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are to be expected. Accordingly, the embodiments described herein should not be construed as limited to the particular shapes of regions shown herein, but include deviations in shapes, for example, resulting from manufacturing. For example, regions shown or described as flat will generally have rough and / or non-linear features. Additionally, sharp corners shown may be rounded. Thus, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the exact shape of a region and are not intended to limit the scope of the claims.

[0064] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0065] Figure 1 is a plan view illustrating a display device according to an embodiment.

[0066] Reference Figure 1, embodiments of the display device DD can display moving images or still images. The display device DD can include any electronic device including a display screen. Examples of the display device DD can include a television, a laptop computer, a monitor, a billboard, an Internet of Things device, a mobile phone, a smartphone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an e-book, a portable multimedia player (PMP), a navigation device, a gaming machine, a digital camera, and a video camera, etc.

[0067] Various modifications can be made to the shape of the display device DD. In an embodiment, for example, the display device DD can have a shape such as a rectangular shape elongated in the horizontal direction, a rectangular shape elongated in the vertical direction, a square shape, a quadrilateral shape with rounded corners (vertices), other polygonal shapes, and a circular shape. The shape of the display area DPA of the display device DD can also be similar to the overall shape of the display device DD. In an embodiment, as Figure 1 shown, the display device DD and the display area DPA can have a rectangular shape elongated in the horizontal direction, but the present disclosure is not limited thereto.

[0068] In an embodiment, the display device DD can include a display area DPA and a non-display area NDA. The display area DPA is an area capable of displaying a picture, and the non-display area NDA is an area that does not display a picture. The display area DPA can also be referred to as an effective area, and the non-display area NDA can also be referred to as a non-effective area. The display area DPA can substantially occupy the center of the display device DD.

[0069] The display area DPA can include a plurality of pixels PX. The plurality of pixels PX can be arranged in a matrix form.

[0070] The non-display area NDA can be provided around the display area DPA. The non-display area NDA can completely or partially surround the display area DPA. The display area DPA can have a rectangular shape, and the non-display area NDA can be provided adjacent to the four sides of the display area DPA.

[0071] Figure 2 is a cross-sectional view of a display panel according to an embodiment.

[0072] Reference Figure 2, embodiments of the display device DD may include a display panel DP. The display panel DP displays a screen or an image and may be, for example, a self-emitting display panel such as an organic light-emitting display panel, an inorganic light-emitting display panel, a quantum dot light-emitting display panel, a micro light-emitting diode (LED) display panel, a nano-LED display panel, a plasma display panel, a field emission display panel, or a cathode ray display panel, and a light-receiving display panel such as a liquid crystal display panel or an electrophoretic display panel. Hereinafter, for ease of description, an embodiment in which the display panel DP is an organic light-emitting display panel will be described as an example, but it is not limited thereto.

[0073] In an embodiment, as Figure 2 shown, the display panel DP may include a base substrate SUB1, a buffer layer SUB2, a semiconductor layer ACT, a first insulating layer IL1, a first gate conductive layer GCL1, a second insulating layer IL2, a second gate conductive layer GCL2, a third insulating layer IL3, a data conductive layer DCL, a fourth insulating layer IL4, an anode electrode ANO, a pixel defining layer PDL including an opening exposing the anode electrode ANO, a light-emitting layer EML disposed in the opening of the pixel defining layer PDL, a cathode electrode CAT disposed on the light-emitting layer EML and the pixel defining layer PDL, and a thin film encapsulation layer EN disposed on the cathode electrode CAT. Each of the layers described above may be composed of (or defined by) a single layer or a stack of multiple layers. Another layer may be further provided between the respective layers.

[0074] The base substrate SUB1 may support the respective layers disposed thereon. The base substrate SUB1 may include an insulating material such as a polymer resin or an inorganic material (such as glass or quartz), or be made of the same.

[0075] The buffer layer SUB2 is disposed on the base substrate SUB1. The buffer layer SUB2 may include silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0076] The semiconductor layer ACT may be disposed on the buffer layer SUB2. The semiconductor layer ACT may form a channel of a thin film transistor of a pixel. The semiconductor layer ACT may include polycrystalline silicon crystallized by a display device manufacturing apparatus 1000 (see Figure 3A ) to be described later. The semiconductor layer ACT may be formed by crystallizing an entire amorphous silicon thin film 11 (see Figure 3A ) disposed on a target substrate 10 (see Figure 3A ) and then patterning the crystallized amorphous silicon thin film 11, or may be formed by first patterning the amorphous silicon thin film 11 (see Figure 3A ) and then crystallizing the patterned amorphous silicon thin film 11 (see Figure 3A ). However, the present disclosure is not limited thereto, and only the amorphous silicon thin film 11 (seeFigure 3A ) part of which crystallizes, such that the semiconductor layer ACT can include both an amorphous silicon region in which amorphous silicon is provided and a polycrystalline silicon region in which polycrystalline silicon is provided.

[0077] The first insulating layer IL1 can be provided on the semiconductor layer ACT. The first insulating layer IL1 can be a gate insulating layer having a gate insulating function.

[0078] The first gate conductive layer GCL1 can be provided on the first insulating layer IL1. The first gate conductive layer GCL1 can include a gate electrode GAT of a thin film transistor of the pixel, a scan line connected to the gate electrode GAT, and a first electrode CE1 of a storage capacitor.

[0079] The second insulating layer IL2 can be provided on the first gate conductive layer GCL1. The second insulating layer IL2 can be an interlayer insulating layer or a second gate insulating layer.

[0080] The second gate conductive layer GCL2 can be provided on the second insulating layer IL2. The second gate conductive layer GCL2 can include a second electrode CE2 of a storage capacitor.

[0081] The third insulating layer IL3 can be provided on the second gate conductive layer GCL2. The third insulating layer IL3 can be an interlayer insulating layer.

[0082] The data conductive layer DCL can be provided on the third insulating layer IL3. The data conductive layer DCL can include a first power supply line ELVDDE and a first electrode SD1 and a second electrode SD2 of a thin film transistor of the pixel. The first electrode SD1 and the second electrode SD2 of the thin film transistor can be electrically connected to a source region and a drain region of the semiconductor layer ACT via contact holes defined or formed through the third insulating layer IL3, the second insulating layer IL2, and the first insulating layer IL1, respectively.

[0083] The fourth insulating layer IL4 can be provided on the data conductive layer DCL. The fourth insulating layer IL4 can cover the data conductive layer DCL. The fourth insulating layer IL4 can be a via layer.

[0084] The anode electrode ANO can be provided on the fourth insulating layer IL4. The anode electrode ANO can be a pixel electrode provided for each pixel. The anode electrode ANO can be connected to the second electrode SD2 of the thin film transistor via a contact hole passing through the fourth insulating layer IL4.

[0085] The pixel defining layer PDL can be provided on the anode electrode ANO. The pixel defining layer PDL can be provided on the anode electrode ANO and can define an opening exposing the anode electrode ANO. The emission region EMA and the non-emission region NEM can be distinguished by the pixel defining layer PDL and its opening.

[0086] The spacer SP can be disposed on the pixel defining layer PDL. The spacer SP can be used to maintain a gap with the structure disposed above it.

[0087] The emission layer EML can be disposed on the anode electrode ANO exposed by the pixel defining layer PDL. The emission layer EML can include an organic material layer. The organic material layer of the emission layer EML can include an organic light emitting layer, and can further include a hole injection layer / hole transport layer and / or an electron injection layer / electron transport layer.

[0088] The cathode electrode CAT can be disposed on the emission layer EML. The cathode electrode CAT can be a common electrode extending across all pixels. The anode electrode ANO, the emission layer EML, and the cathode electrode CAT can constitute an organic light emitting element.

[0089] The thin film encapsulation layer EN including a first inorganic film EN1, a first organic film EN2, and a second inorganic film EN3 is disposed on the cathode electrode CAT. The first inorganic film EN1 and the second inorganic film EN3 can be in contact with each other at the ends of the thin film encapsulation layer EN. The first organic film EN2 can be sealed by the first inorganic film EN1 and the second inorganic film EN3.

[0090] Each of the first inorganic film EN1 and the second inorganic film EN3 can include silicon nitride, silicon oxide, or silicon oxynitride, etc. The first organic film EN2 can include an organic insulating material.

[0091] Hereinafter, embodiments of an apparatus (also referred to as a display device manufacturing apparatus) for manufacturing a display device for forming a polysilicon thin film included in the above semiconductor layer ACT will be described.

[0092] Figure 3A is a perspective view illustrating an annealing process of a display device according to an embodiment. Figure 3B is a cross-sectional view illustrating an annealing process of a display device according to an embodiment. Figure 4A is a front view showing the shape of a final laser beam according to an embodiment. Figure 4B is a front view showing a cumulative map of positions irradiated by the final laser beam when the target substrate moves according to an embodiment.

[0093] Reference Figure 3A 、 Figure 3B 、 Figure 4A and Figure 4B In the annealing process of the display device according to the embodiment, the amorphous silicon thin film 11 can be disposed on the target substrate 10. The target substrate 10 can be the base substrate SUB1 described above with reference to Figure 2 Description.

[0094] Here, as an example, it is described that the amorphous silicon thin film 11 is formed on the target substrate 10 and crystallized by the display device manufacturing apparatus 1000, but the present disclosure is not limited thereto. In an embodiment, for example, the amorphous silicon thin film 11 may be an amorphous semiconductor layer that further includes another material in addition to silicon.

[0095] The amorphous silicon thin film 11 may be formed by a method such as chemical vapor deposition (CVD) (such as plasma CVD). In an embodiment, the amorphous silicon thin film 11 may be formed using silicon or a silicon compound (e.g., Si x Ge y ).

[0096] The amorphous silicon thin film 11 may have a uniform thickness in each region, but is not limited thereto. In an embodiment, for example, as Figure 3B shown, the amorphous silicon thin film 11 may include an uneven top surface and bottom surface. In such an embodiment, the amorphous silicon thin film 11 may have different thicknesses in different regions due to its microstructure.

[0097] The display device manufacturing apparatus 1000 according to an embodiment may be a laser annealing apparatus that crystallizes the amorphous silicon thin film 11 into a polycrystalline silicon thin film 12 using (e.g., by irradiating) a laser.

[0098] The display device manufacturing apparatus 1000 may provide a final laser beam FLB on the amorphous silicon thin film 11. The display device manufacturing apparatus 1000 may be located on the target substrate 10 when providing the final laser beam FLB on the amorphous silicon thin film 11. In an embodiment, for example, the display device manufacturing apparatus 1000 may be located above the target substrate 10 when providing the final laser beam FLB on the amorphous silicon thin film 11.

[0099] The display device manufacturing apparatus 1000 may irradiate the final laser beam FLB onto the amorphous silicon thin film 11 located on the target substrate 10. The amorphous silicon thin film 11 irradiated with the final laser beam FLB may be crystallized into a polycrystalline silicon thin film 12.

[0100] Effective crystallization of the amorphous silicon thin film 11 may require a large amount of energy. Therefore, it may be desirable that the energy provided per unit area of the region to be irradiated with the final laser beam FLB is large. Accordingly, in an embodiment, the display device manufacturing apparatus 1000 may process a plurality of raw laser beams RLB (see Figure 7 ) to form the final laser beam FLB. The process of processing the raw laser beams RLB (see Figure 5 ) to form the final laser beam FLB will be described later with reference to Figure 7 .

[0101] When crystallizing the amorphous silicon thin film 11 at a temperature below the melting point, abnormal protrusions formed at grain boundaries can be reduced, thereby improving the crystallinity. Therefore, it may be desirable to heat the amorphous silicon thin film 11 to a temperature below the melting point of the amorphous silicon thin film 11. In an embodiment, for example, when the melting temperature of the amorphous silicon thin film 11 is about 1460 °C, the final laser beam FLB can be controlled to heat the amorphous silicon thin film 11 to a temperature of about 1300 °C to 1400 °C. The final laser beam FLB can be irradiated onto the amorphous silicon thin film 11 within several nanoseconds (ns) to dozens of nanoseconds (ns).

[0102] The amorphous silicon contained in the amorphous silicon thin film 11 can be melted due to the rapid increase in temperature caused by the final laser beam FLB irradiated thereon, and then cooled and recrystallized. In this way, the amorphous silicon thin film 11 can be crystallized into a polycrystalline silicon thin film 12 by the final laser beam FLB. Repeated melting and recrystallization of the amorphous silicon thin film 11 may cause unevenness on the surface, which may increase the surface roughness. That is, the surface roughness of the polycrystalline silicon thin film 12 can be greater than the surface roughness of the amorphous silicon thin film 11.

[0103] The final laser beam FLB can be emitted in the form of a light beam extending in one direction and having a width in another direction. The final laser beam FLB can be emitted in the path direction Lz. The line shape of the final laser beam FLB can extend in the long axis direction Lx perpendicular to the path direction Lz which is the emission direction, and can have a predetermined width in the short axis direction Ly perpendicular to the path direction Lz.

[0104] In this specification and the drawings, the path direction Lz may refer to the traveling direction of the laser (i.e., the direction along the moving path of the laser). The long axis direction Lx may refer to the extending direction of the laser, and the short axis direction Ly may refer to the width direction of the laser. In some embodiments, the long axis direction Lx, the short axis direction Ly, and the path direction Lz may be perpendicular to each other, but are not limited thereto. In the display device manufacturing apparatus 1000 according to an embodiment, the long axis direction Lx, the short axis direction Ly, and the path direction Lz may be changed along the moving path of the laser.

[0105] As Figure 3B and Figure 4A shown, in the plane observed along the long axis direction Lx, the final laser beam FLB can have a trapezoidal shape. In an embodiment, for example, in the plane observed along the long axis direction Lx, the final laser beam FLB can have a shape with its width increasing from the top to the bottom.

[0106] As Figure 4A shown, the beam profile shape of the final laser beam FLB can be a flat-top type. Accordingly, uniform energy can be transmitted to the silicon thin films 11 and 12 in the area irradiated by the laser.

[0107] The major axis direction Lx, which is the extension direction of the final laser beam FLB, can be referred to as the major axis direction, and the length in the major axis direction Lx can be referred to as the major axis dimension Dx.

[0108] The larger the major axis dimension Dx, the larger the area of the amorphous silicon film 11 to be crystallized. In some embodiments, the major axis dimension Dx can be equal to the length of the target substrate 10 in the major axis direction Lx. Accordingly, the processing can be completed by using only one scan in one direction, thereby improving the processing efficiency. In an embodiment, the major axis dimension Dx can be in the range of about 1000 millimeters (mm) to about 2000 mm. In an embodiment, for example, the major axis dimension Dx can be about 1500 mm.

[0109] The minor axis direction Ly, which is perpendicular to the extension direction of the final laser beam FLB in the thickness direction, can be referred to as the minor axis direction, and the length in the minor axis direction Ly can be referred to as the minor axis dimension Dy. In an embodiment, the minor axis dimension Dy of the final laser beam FLB can be in the range of about 95 micrometers (μm) to about 110 μm. By having a small minor axis dimension Dy, the display device manufacturing apparatus 1000 according to the embodiment can provide a larger energy per unit area to the silicon films 11 and 12, thereby improving the crystallization quality.

[0110] As Figure 4A shown, the minor axis dimension Dy can be the width at a point that is 90% of the total height from the lower edge of the final laser beam FLB. In an embodiment, for example, the minor axis dimension Dy can be the horizontal length in the minor axis direction Ly at a point that is 90% of the total height from the lower edge of the final laser beam FLB in a plane viewed along the major axis direction Lx.

[0111] In some embodiments, the inclined surface dimension S_Dy of the final laser beam FLB can be in the range of about 30 μm to about 45 μm. The inclined surface dimension S_Dy can be the width corresponding to the portion that is 10% to 90% of the total height from the lower edge of the final laser beam FLB. In an embodiment, for example, the inclined surface dimension S_Dy can be the horizontal length in the minor axis direction Ly corresponding to the portion that is 10% to 90% of the total height from the lower edge of the final laser beam FLB. The inclined surface dimension S_Dy can be measured with respect to one of the two opposite side surfaces of the final laser beam FLB.

[0112] Although not shown in the drawings, the target substrate 10 on which the amorphous silicon thin film 11 is formed may be placed on a movable stage (not shown). While the final laser beam FLB is irradiated, the movable stage (not shown) may uniformly move the target substrate 10 in the direction of the arrow to ensure that the amorphous silicon thin film 11 on the target substrate 10 is uniformly irradiated with the final laser beam FLB.

[0113] In another embodiment, for example, while the target substrate 10 on which the amorphous silicon thin film 11 is formed remains stationary, the display device manufacturing apparatus 1000 may move and irradiate the final laser beam FLB. In still another embodiment, for example, the display device manufacturing apparatus 1000 may irradiate the final laser beam FLB while moving together with the target substrate 10 on which the amorphous silicon thin film 11 is formed. In such an embodiment, the display device manufacturing apparatus 1000 and the target substrate 10 on which the amorphous silicon thin film 11 is formed may move at the same moving speed, but they are not limited thereto and may move at different speeds.

[0114] In some embodiments, as Figure 4B shown, the irradiation area of the final laser beam FLB may overlap several times or more on the silicon thin films 11 and 12. The scanning interval I_Dy of the final laser beam FLB may be less than the minor axis size Dy. In an embodiment, the scanning interval I_Dy may be about 2 μm. Since the non-overlap ratio between adjacent final laser beams FLB is the ratio of the scanning interval I_Dy to the minor axis size Dy, the overlap ratio between adjacent final laser beams FLB may be in the range of about 97.5% to about 98.5%. Since the number of irradiations of the final laser beam FLB at a point on the silicon thin films 11 and 12 is determined by the ratio of the scanning interval I_Dy to the minor axis size Dy, the number of irradiations of the final laser beam FLB at a point on the silicon thin films 11 and 12 may be in the range of 47 to 55 times.

[0115] In an embodiment, the energy density per unit area of the final laser beam FLB may be in the range of about 310 millijoules per square centimeter (mJ / cm 2 ) to about 320 mJ / cm 2 of the range.

[0116] The display device manufacturing apparatus 1000 according to an embodiment may have a high overlap ratio and a large number of irradiations to increase the energy applied to the silicon thin films 11 and 12, thereby improving the crystallization quality. Accordingly, the energy applied to the silicon thin films 11 and 12 can be increased without excessively increasing the output or oscillation frequency of the laser, etc., thereby minimizing (or significantly reducing) the thermal deformation and damage to the optical components included in the display device manufacturing apparatus 1000.

[0117] Even when either the target substrate 10 or the display device manufacturing apparatus 1000 moves, the crystallization process speed can be determined based on the relative speed between the target substrate 10 and the display device manufacturing apparatus 1000. The process speed of the display device manufacturing apparatus 1000 according to an embodiment (i.e., the relative speed between the target substrate 10 and the display device manufacturing apparatus 1000) can be about 20 millimeters per second (mm / s), but is not limited thereto. This process speed can be calculated by multiplying the frequency of the original laser beam RLB (see Figure 7 ) by the scanning interval I_Dy.

[0118] The top and bottom surfaces of the silicon thin films 11 and 12 may include irregularities. As shown in Figure 3B , the top surface of the silicon thin films 11 and 12 may have the highest point HP that protrudes most toward the other side in the path direction Lz, and the bottom surface of the silicon thin films 11 and 12 may have the lowest point LP that protrudes most toward one side in the path direction Lz.

[0119] To achieve uniform crystallization of the amorphous silicon thin film 11, it is desirable to provide uniform energy to each region. Substantially uniform energy can be provided to the region within the depth of focus (DOF) of the final laser beam FLB from the focal plane. The depth of focus (DOF) refers to the distance within which the focus is considered to remain unchanged whether it moves away from or closer to the focal plane. As the value of the depth of focus (DOF) of the final laser beam FLB increases, the region provided with energy substantially the same as the energy provided to the focal plane can become wider. In other words, the focus of the final laser beam FLB can be formed within the amorphous silicon thin film 11, and it is desirable that the depth of focus (DOF) of the final laser beam FLB is at least greater than the height difference d between the highest point HP and the lowest point LP in order to achieve uniform crystallization of the amorphous silicon thin film 11.

[0120] Figure 5 is a schematic block diagram showing an apparatus for manufacturing a display device according to an embodiment. Figure 6 is a perspective view showing an apparatus for manufacturing a display device according to an embodiment.

[0121] Referring to Figure 5 and Figure 6 , an embodiment of the display device manufacturing apparatus 1000 can be a solid-state laser annealing (SLA) apparatus. The solid-state laser annealing apparatus can have higher productivity, lower maintenance costs, and higher crystallization quality than an excimer laser annealing apparatus. The solid-state laser annealing apparatus refers to a laser device that uses a solid material as the laser medium, and the excimer laser annealing apparatus refers to a laser device that uses a gas material as the laser medium.

[0122] For example, unlike an excimer laser annealing apparatus, a solid-state laser annealing apparatus can be performed without gas filling, so that the display device manufacturing apparatus 1000 according to the embodiment can have high productivity and low maintenance costs due to no downtime for gas filling. Downtime refers to the time when the crystallization process is not performed.

[0123] In addition, it may be desirable for an excimer laser annealing apparatus to operate in a state where the stage is tilted to prevent vertical non-uniformity (mura), the scan interval is set to an integer multiple of the thin film transistor arrangement pitch to prevent diagonal non-uniformity that may occur due to the tilt, and the stage is vector-driven to minimize the ineffective space caused by the tilt. In the embodiment, the display device manufacturing apparatus 1000, which is a solid-state laser annealing apparatus, can be performed without complex apparatus operations such as tilting the stage, setting the scan interval to an integer multiple, and vector-driving the stage, thereby achieving high process efficiency and high crystallization quality.

[0124] In some embodiments, the display device manufacturing apparatus 1000 can use at least one selected from ytterbium yttrium aluminum garnet (Yb:YAG), neodymium yttrium aluminum garnet (Nd:YAG), ruby (Cr:Al 2 O 3 ) and titanium sapphire (Ti:sapphire) as the medium of the laser.

[0125] The display device manufacturing apparatus 1000 may include a laser module 100, a beam coupling module 200, a beam mixing unit 300, a micro smoother 400, an optical module 500, a sealed box 600, and a cavity 700.

[0126] The laser module 100 can generate a plurality of raw laser beams RLB. The laser module 100 may include a plurality of laser generators. As described above, the laser module 100 may be a solid-state laser device that uses a solid material as the medium of the laser.

[0127] The beam coupling module 200 may be disposed on one side of the laser module 100. In the embodiment, for example, the beam coupling module 200 may be disposed on one side of the laser module 100 in the second direction DR2. The beam coupling module 200 can convert the plurality of raw laser beams RLB generated from the laser module 100 into a plurality of coupled beams CPB. The beam coupling module 200 can organize the plurality of raw laser beams RLB into one or several groups to form a plurality of coupled beams CPB.

[0128] In the specification and the drawings, a first direction DR1 and a second direction DR2 cross each other as horizontal directions. For example, the first direction DR1 and the second direction DR2 may be orthogonal to each other. Additionally, a third direction DR3 crosses the first direction DR1 and the second direction DR2, and may be, for example, a vertical direction orthogonal to the first direction DR1 and the second direction DR2. In the specification, the directions indicated by the arrows of the first to third directions DR1 to DR3 in the drawings may be referred to as one side, and the direction opposite thereto may be referred to as the other side. However, if one side or the other side is not specified, it may not be limited to one side or the other side. The first to third directions DR1, DR2, and DR3 may be independent directions independent of the long axis direction Lx, the short axis direction Ly, and the path direction Lz.

[0129] The beam mixing unit 300 may be disposed on one side of the beam coupling module 200. In an embodiment, for example, the beam mixing unit 300 may be disposed on one side of the beam coupling module 200 in the second direction DR2. The beam mixing unit 300 may convert a plurality of coupled beams CPB into a plurality of mixed beams MXB. In an embodiment, the beam mixing unit 300 may form a plurality of mixed beams MXB by mixing a plurality of coupled beams CPB at a specific ratio. In an embodiment, for example, the beam mixing unit 300 may form a plurality of mixed beams MXB by mixing a plurality of coupled beams CPB at the same ratio. In such an embodiment, each of the plurality of mixed beams MXB may include the same number of original laser beams RLB.

[0130] The micro smoother 400 may be disposed on one side of the beam mixing unit 300. In an embodiment, for example, the micro smoother 400 may be disposed on one side of the beam mixing unit 300 in the first direction DR1. The micro smoother 400 may be a device that generates regular or irregular oscillations of a laser beam. By intentionally oscillating the laser beam, the micro smoother 400 can effectively prevent horizontal non-uniformity that may occur during the crystallization of a silicon thin film.

[0131] In an embodiment, for example, as described above with reference to Figure 4A etc., the final laser beam FLB may have a flat-top profile shape. However, when there are some uneven step portions in the flat-top shape or there are particles or the like in the path of the laser beam, an energy imbalance may occur in a part of the laser beam due to the step portions or particles or the like. Accordingly, when the part of the laser beam in which such an energy imbalance has occurred is used to irradiate a certain area of the substrate to scan the substrate, horizontal non-uniformity may occur along the part in which the imbalance has occurred. In the display device manufacturing apparatus 1000 according to an embodiment, the micro smoother 400 may cancel the energy imbalance by generating an intentional oscillation in the laser beam. Accordingly, the occurrence of horizontal non-uniformity can be effectively prevented.

[0132] The optical module 500 may be disposed on the beam combining unit 300 and the micro smoother 400. In an embodiment, for example, the optical module 500 may be disposed on one side of the beam combining unit 300 and the micro smoother 400 in the third direction DR3. The optical module 500 may adjust the phase, travel distance, travel direction, etc. of the plurality of combined beams MXB that have passed through the beam combining unit 300. The optical module 500 may determine the shape of the final laser beam FLB by adjusting the phase, travel distance, travel direction, etc. of the plurality of combined beams MXB. The optical module 500 may include at least one selected from a phase retarder, a lens, and a mirror.

[0133] The sealed box 600 may be disposed between the optical module 500 and the cavity 700. In an embodiment, for example, the sealed box 600 may be disposed between the optical module 500 and the cavity 700 in the third direction DR3. The sealed box 600 may be a space for processing the final laser beam FLB before the final laser beam FLB is incident on the cavity 700.

[0134] The cavity 700 may be disposed below the optical module 500. In an embodiment, for example, the cavity 700 may be disposed on one side of the optical module 500 in a direction opposite to the third direction DR3. The cavity 700 may provide an internal space for performing an annealing process.

[0135] Figure 7 is a perspective view showing a laser module according to an embodiment.

[0136] Except Figure 5 and Figure 6 In addition, with reference to Figure 7 , embodiments of the laser module 100 may include a plurality of laser generators. In an embodiment, for example, the laser module 100 may include a first laser generator 101, a second laser generator 102, a third laser generator 103, a fourth laser generator 104, a fifth laser generator 105, a sixth laser generator 106, a seventh laser generator 107, an eighth laser generator 108, a ninth laser generator 109, and a tenth laser generator 110. In the drawings, an embodiment in which the laser module 100 includes ten laser generators is shown, but the number of laser generators included in the laser module 100 is not limited thereto. The number of laser generators included in the laser module 100 may vary depending on the total output power, oscillation frequency, or processing speed, etc. of the laser module 100.

[0137] The first laser generator 101 to the fifth laser generator 105 may be arranged side by side in the first direction DR1. The sixth laser generator 106 to the tenth laser generator 110 may be arranged side by side in the first direction DR1. The first laser generator 101 may be arranged side by side with the sixth laser generator 106 in the third direction DR3. The second laser generator 102 may be arranged side by side with the seventh laser generator 107 in the third direction DR3. The third laser generator 103 may be arranged side by side with the eighth laser generator 108 in the third direction DR3. The fourth laser generator 104 may be arranged side by side with the ninth laser generator 109 in the third direction DR3. The fifth laser generator 105 may be arranged side by side with the tenth laser generator 110 in the third direction DR3.

[0138] The laser module 100 may generate a raw laser beam RLB. In an embodiment, for example, the first laser generator 101 may generate a first raw laser beam RLB1, the second laser generator 102 may generate a second raw laser beam RLB2, the third laser generator 103 may generate a third raw laser beam RLB3, the fourth laser generator 104 may generate a fourth raw laser beam RLB4, the fifth laser generator 105 may generate a fifth raw laser beam RLB5, the sixth laser generator 106 may generate a sixth raw laser beam RLB6, the seventh laser generator 107 may generate a seventh raw laser beam RLB7, the eighth laser generator 108 may generate an eighth raw laser beam RLB8, the ninth laser generator 109 may generate a ninth raw laser beam RLB9, and the tenth laser generator 110 may generate a tenth raw laser beam RLB10.

[0139] The raw laser beam RLB may include at least one laser beam. In an embodiment, for example, the first raw laser beam RLB1 to the tenth raw laser beam RLB10 may each include two laser beams, but is not limited thereto.

[0140] The total output power of the laser module 100 can be in the range of approximately 5760 watts (W) to approximately 9000 watts (W). In an embodiment, for example, the total output power of the laser module 100 can be approximately 7200 W. The output power of each of the first laser generator 101 to the tenth laser generator 110 can be in the range of approximately 600 W to approximately 900 W. Preferably, the output power of each of the first laser generator 101 to the tenth laser generator 110 can be approximately 720 W. The output powers of the first laser generator 101 to the tenth laser generator 110 can be the same as each other, but the present disclosure is not limited thereto. By increasing the number of laser generators and setting the output power of each laser generator to below approximately 1000 W, the display device manufacturing apparatus 1000 according to an embodiment can effectively prevent thermal deformation caused by high energy accumulation in various optical components included in the display device manufacturing apparatus 1000, thereby increasing the lifespan.

[0141] The oscillation frequency of the laser module 100 (e.g., the oscillation frequency of each of the first laser generator 101 to the tenth laser generator 110) can be in the range of approximately 5000 hertz (Hz) to approximately 15000 hertz (Hz). In an embodiment, for example, the oscillation frequency of each of the first laser generator 101 to the tenth laser generator 110 can be approximately 10000 hertz (Hz). The display device manufacturing apparatus 1000 according to an embodiment can improve the efficiency and throughput of the annealing process by using a laser with a high repetition rate. In such an embodiment, since the oscillation frequency of the laser module 100 is below approximately 15000 hertz (Hz), thermal deformation caused by high energy accumulation in various optical components included in the display device manufacturing apparatus 1000 can be effectively prevented, thereby increasing the lifespan.

[0142] The original laser beam RLB can be a laser beam in the ultraviolet region. For example, the wavelength of the original laser beam RLB can be in the range of approximately 337 nanometers (nm) to approximately 357 nm. In an embodiment, for example, the wavelength of the original laser beam RLB can be in the range of approximately 341 nm to approximately 345 nm. The display device manufacturing apparatus 1000 according to an embodiment can have a high transmittance by using the original laser beam RLB in the ultraviolet region with a short wavelength. As a result, the depth of focus (DOF) can be increased, and thus uniform crystallization can be achieved.

[0143] Figure 8 is a cross-sectional view showing a beam coupling module according to an embodiment. Figure 9 is a perspective view illustrating a group coupling unit and a pulse expander module according to an embodiment. Figure 10 is a schematic diagram showing the path of a laser beam passing through a beam coupling module and a beam mixing unit according to an embodiment.

[0144] In addition to Figure 5 and Figure 6 in addition, reference is also made to Figures 8 to 10 The beam coupling module 200 may include a plurality of beam coupling modules 201 to 210, at least one squeegee unit 220, a set of telescope units 230, and a set of coupling units 240.

[0145] The beam coupling module 200 may include a plurality of beam coupling modules. In an embodiment, for example, the beam coupling module 200 may include a first beam coupling module 201, a second beam coupling module 202, a third beam coupling module 203, a fourth beam coupling module 204, a fifth beam coupling module 205, a sixth beam coupling module 206, a seventh beam coupling module 207, an eighth beam coupling module 208, a ninth beam coupling module 209, and a tenth beam coupling module 210. In the drawings, an embodiment in which the beam coupling module 200 includes ten beam coupling modules is shown, but the number of beam coupling modules 200 is not limited thereto. The number of beam coupling modules 200 may vary depending on the number of laser generators of the laser module 100.

[0146] The first beam coupling module 201 to the fifth beam coupling module 205 may be arranged side by side in a first direction DR1. The sixth beam coupling module 206 to the tenth beam coupling module 210 may be arranged side by side in the first direction DR1. The first beam coupling module 201 may be arranged side by side with the sixth beam coupling module 206 in a third direction DR3. The second beam coupling module 202 may be arranged side by side with the seventh beam coupling module 207 in the third direction DR3. The third beam coupling module 203 may be arranged side by side with the eighth beam coupling module 208 in the third direction DR3. The fourth beam coupling module 204 may be arranged side by side with the ninth beam coupling module 209 in the third direction DR3. The fifth beam coupling module 205 may be arranged side by side with the tenth beam coupling module 210 in the third direction DR3.

[0147] The first beam coupling module 201 to the tenth beam coupling module 210 may be respectively disposed on one side of the first laser generator 101 to the tenth laser generator 110 in a second direction DR2. The first beam coupling module 201 to the tenth beam coupling module 210 may respectively receive the first original laser beam RLB1 to the tenth original laser beam RLB10 from the first laser generator 101 to the tenth laser generator 110.

[0148] The first beam coupling module 201 to the tenth beam coupling module 210 may each include at least one shutter 201a to 210a. In an embodiment, for example, the first beam coupling module 201 may include a first shutter 201a, the second beam coupling module 202 may include a second shutter 202a, the third beam coupling module 203 may include a third shutter 203a, the fourth beam coupling module 204 may include a fourth shutter 204a, the fifth beam coupling module 205 may include a fifth shutter 205a, the sixth beam coupling module 206 may include a sixth shutter 206a, the seventh beam coupling module 207 may include a seventh shutter 207a, the eighth beam coupling module 208 may include an eighth shutter 208a, the ninth beam coupling module 209 may include a ninth shutter 209a, and the tenth beam coupling module 210 may include a tenth shutter 210a.

[0149] The first shutter 201a to the tenth shutter 210a may respectively adjust the incidence of the first original laser beam RLB1 to the tenth original laser beam RLB10 into the first beam coupling module 201 to the tenth beam coupling module 210. The shutter operation speed of the first shutter 201a to the tenth shutter 210a may be in the range of about 20 milliseconds (ms) to about 500 milliseconds (ms). In an embodiment, for example, the shutter operation speed of the first shutter 201a to the tenth shutter 210a may be in the range of about 20 milliseconds (ms) to about 100 milliseconds (ms).

[0150] The first beam coupling module 201 to the tenth beam coupling module 210 may each include at least one high-speed photodiode 201b to 210b, at least one low-speed photodiode 201c to 210c, and at least one single-beam monitor 201d to 210d. In an embodiment, for example, the first beam coupling module 201 may include a first high-speed photodiode 201b, a first low-speed photodiode 201c, and a first single-beam monitor 201d. The second beam coupling module 202 may include a second high-speed photodiode 202b, a second low-speed photodiode 202c, and a second single-beam monitor 202d. The third beam coupling module 203 may include a third high-speed photodiode 203b, a third low-speed photodiode 203c, and a third single-beam monitor 203d. The fourth beam coupling module 204 may include a fourth high-speed photodiode 204b, a fourth low-speed photodiode 204c, and a fourth single-beam monitor 204d. The fifth beam coupling module 205 may include a fifth high-speed photodiode 205b, a fifth low-speed photodiode 205c, and a fifth single-beam monitor 205d. The sixth beam coupling module 206 may include a sixth high-speed photodiode 206b, a sixth low-speed photodiode 206c, and a sixth single-beam monitor 206d. The seventh beam coupling module 207 may include a seventh high-speed photodiode 207b, a seventh low-speed photodiode 207c, and a seventh single-beam monitor 207d. The eighth beam coupling module 208 may include an eighth high-speed photodiode 208b, an eighth low-speed photodiode 208c, and an eighth single-beam monitor 208d. The ninth beam coupling module 209 may include a ninth high-speed photodiode 209b, a ninth low-speed photodiode 209c, and a ninth single-beam monitor 209d. The tenth beam coupling module 210 may include a tenth high-speed photodiode 210b, a tenth low-speed photodiode 210c, and a tenth single-beam monitor 210d.

[0151] The high-speed photodiodes 201b to 210b, the low-speed photodiodes 201c to 210c, and the single-beam monitors 201d to 210d may be configured to monitor the state of the original laser beam RLB. In an embodiment, for example, the high-speed photodiodes 201b to 210b may monitor the pulse shape of the original laser beam RLB, the low-speed photodiodes 201c to 210c may monitor the peak power of the original laser beam RLB, and the single-beam monitors 201d to 210d may monitor other characteristics of the original laser beam RLB such as pulse duration and wavelength.

[0152] The squeegee unit 220 may group each of the first to tenth original laser beams RLB1 to RLB10 respectively provided from the first to tenth beam coupling modules 201 to 210 to form a coupled beam CPB. The squeegee unit 220 may include a first squeegee unit 221, a second squeegee unit 222, and a third squeegee unit 223.

[0153] The first squeegee unit 221 may be connected to the first beam coupling module 201 and the sixth beam coupling module 206. The second squeegee unit 222 may be connected to the second beam coupling module 202, the third beam coupling module 203, the seventh beam coupling module 207, and the eighth beam coupling module 208. The third squeegee unit 223 may be connected to the fourth beam coupling module 204, the fifth beam coupling module 205, the ninth beam coupling module 209, and the tenth beam coupling module 210.

[0154] The first squeegee unit 221 may use the first original laser beam RLB1 to generate a first coupled beam CPB1. The first squeegee unit 221 may use the sixth original laser beam RLB6 to generate a second coupled beam CPB2. The second squeegee unit 222 may use the second original laser beam RLB2, the third original laser beam RLB3, the seventh original laser beam RLB7, and the eighth original laser beam RLB8 to generate a fourth coupled beam CPB4 and a fifth coupled beam CPB5. The third squeegee unit 223 may use the fourth original laser beam RLB4, the fifth original laser beam RLB5, the ninth original laser beam RLB9, and the tenth original laser beam RLB10 to generate a third coupled beam CPB3 and a sixth coupled beam CPB6.

[0155] The second squeegee unit 222 may include a first premixer 222a, and the third squeegee unit 223 may include a second premixer 223a. The first premixer 222a and the second premixer 223a may be optical devices that transmit and reflect incident laser beams at a ratio of 1:1. The second squeegee unit 222 and the third squeegee unit 223 may generate the coupled beam CPB by grouping a plurality of original laser beams RLB using the first premixer 222a and the second premixer 223a respectively.

[0156] The group telescope unit 230 may adjust the degree of divergence of the coupled beam CPB incident on the group telescope unit 230. In an embodiment, for example, the group telescope unit 230 may adjust the degree of divergence of each laser beam included in the coupled beam CPB to provide the coupled beam CPB to the group coupling unit 240.

[0157] The group of telescope units 230 may include a first telescope unit 231, a second telescope unit 232, and a third telescope unit 233. The first telescope unit 231 may connect the first squeegee unit 221 to the group coupling unit 240. The second telescope unit 232 may connect the second squeegee unit 222 to the group coupling unit 240. The third telescope unit 233 may connect the third squeegee unit 223 to the group coupling unit 240.

[0158] The group coupling unit 240 may provide a coupled beam CPB to the beam mixing unit 300. In an embodiment, for example, the group coupling unit 240 may change the path of the coupled beam CPB traveling in the first direction DR1 to a second direction DR2. The coupled beam CPB whose path has been changed by the group coupling unit 240 may move to the beam mixing unit 300.

[0159] In some embodiments, the beam coupling module 200 may further include a pulse expander module (optical pulse duration expander module (OPDEM)) 250.

[0160] The pulse expander module 250 may be disposed between the group coupling unit 240 and the beam mixing unit 300. The pulse expander module 250 may expand the pulse duration of the final laser beam FLB.

[0161] In an embodiment, for example, the pulse expander module 250 may adjust the time at which each coupled beam CPB is incident on the beam mixing unit 300 by controlling the movement path and traveling direction of the coupled beam CPB. In one example, the pulse expander module 250 may include first to sixth beam path adjusters 251, 252, 253, 254, 255, and 256 that respectively adjust the movement path and traveling direction of the first coupled beam CPB1 to the sixth coupled beam CPB6. The first to sixth beam path adjusters 251, 252, 253, 254, 255, and 256 may include at least one selected from a phase retarder, a lens, and a mirror.

[0162] The pulse shape and pulse duration of the final laser beam FLB may be determined by the combination of the mixed beam MXB (see Figure 11 ). Since the mixed beam MXB is generated using the coupled beam CPB, the pulse duration of the final laser beam FLB may be expanded by adjusting the time at which each coupled beam CPB is incident on the beam mixing unit 300.

[0163] For example, if the time it takes for the first coupled beam CPB1 to leave the group coupling unit 240, pass through the first beam path adjuster 251, and reach the beam mixing unit 300 is shorter than the time it takes for the second coupled beam CPB2 to leave the group coupling unit 240, pass through the second beam path adjuster 252, and reach the beam mixing unit 300, then the first coupled beam CPB1 and the second coupled beam CPB2 can form a final laser beam FLB with lower energy and longer pulse duration through mutual enhancement / cancellation interference. If the arrival times of the first coupled beam CPB1 and the second coupled beam CPB2 are the same, a final laser beam FLB with higher energy can be formed without increasing the pulse duration.

[0164] The display device manufacturing apparatus 1000 according to an embodiment can freely or effectively adjust the pulse duration and energy intensity of the final laser beam FLB by including the pulse expander module 250. Accordingly, various pulse shapes of the final laser beam FLB can be achieved.

[0165] In an embodiment, the pulse duration of the final laser beam FLB generated by the pulse expander module 250 can be in the range of approximately 14 nanoseconds (ns) to approximately 20 nanoseconds (ns).

[0166] Figure 11 is a schematic diagram showing the path of a laser beam passing through a beam mixing unit according to an embodiment. Figure 12 is a schematic diagram showing the process of distributing each coupled beam into a mixed beam in a beam mixing unit according to an embodiment.

[0167] In addition to Figure 5 , Figure 6 , Figure 8 and Figure 10 further reference is made to Figure 11 and Figure 12 , embodiments of the beam mixing unit 300 can mix a plurality of coupled beams CPB to generate a plurality of mixed beams MXB. In an embodiment, for example, the beam mixing unit 300 can mix a plurality of coupled beams CPB at various ratios to generate first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6.

[0168] The first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 may have substantially the same energy intensity as each other. The display device manufacturing apparatus 1000 according to an embodiment may use the light beam mixing unit 300 to generate the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 having the same energy to form the final laser beam FLB having uniform energy. Accordingly, the vertical non-uniformity phenomenon that may occur in the silicon thin film during the annealing process can be effectively prevented.

[0169] The light beam mixing unit 300 may include a mirror SPL10, a first separator SPL11, and a second separator SPL21. The light beam mixing unit 300 may generate the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 having the same energy by adjusting the energy and path of the coupled light beam CPB incident on the mirror SPL10, the first separator SPL11, and the second separator SPL21.

[0170] The mirror SPL10 may change the path of the incident coupled light beam CPB without changing the energy by reflecting the incident coupled light beam CPB.

[0171] The first separator SPL11 may transmit and reflect the incident coupled light beam CPB at a ratio of 1:1. The ratio of the energy intensity of the coupled light beam CPB transmitted and reflected at the first separator SPL11 may be 1:1.

[0172] The second separator SPL21 may transmit and reflect the incident coupled light beam CPB at a ratio of 2:1. The ratio of the energy intensity of the coupled light beam CPB transmitted and reflected at the second separator SPL21 may be 2:1.

[0173] In an embodiment, for example, when the initial energy intensity of each of the first to tenth original laser beams RLB1 to RLB10 is 100, the first original laser beam RLB1 and the sixth original laser beam RLB6 can be used to generate a first coupled beam CPB1 and a second coupled beam CPB2 respectively, such that the energy intensities of the first coupled beam CPB1 and the second coupled beam CPB2 can each be 100. Since the third original laser beam RLB4, the fifth original laser beam RLB5, the ninth original laser beam RLB9, and the tenth original laser beam RLB10 are used to generate a third coupled beam CPB3 and a sixth coupled beam CPB6, the energy intensities of the third coupled beam CPB3 and the sixth coupled beam CPB6 can each be 200. Since the second original laser beam RLB2, the third original laser beam RLB3, the seventh original laser beam RLB7, and the eighth original laser beam RLB8 are used to generate a fourth coupled beam CPB4 and a fifth coupled beam CPB5, the energy intensities of the fourth coupled beam CPB4 and the fifth coupled beam CPB5 can each be 200.

[0174] First, as Figure 12 shown in the first schematic diagram G1 in

[0175] the first coupled beam CPB1 having an energy of 100 can be split by a first separator SPL11 at a first position into two laser beams each having an energy of 50. The laser beams each having an energy of 50 can each be split by the first separator SPL11 at a second position into a laser beam having an energy of 25 and a laser beam having an energy of 25'.

[0176] In this specification and the drawings, the distinction between the energy of 25 and the energy of 25' is only for the simplicity of description, but they refer to the energy of the same intensity. Hereinafter, the energy of 100 and the energy of 100' are the same.

[0177] The laser beam having an energy of 25 can be split by a second separator SPL21 into a laser beam having an energy of 25(4 / 6) and a laser beam having an energy of 25(2 / 6). The laser beam having an energy of 25(2 / 6) can be split by the first separator SPL11 at a third position into two laser beams each having an energy of 25(1 / 6).

[0178] A laser beam with an energy of 25(4 / 6) can be included in the first mixed beam MXB1 and the fourth mixed beam MXB4. A laser beam with an energy of 25(1 / 6) and a laser beam with an energy of 25(3 / 6)' can be combined with each other and included in the second mixed beam MXB2, the third mixed beam MXB3, the fifth mixed beam MXB5, and the sixth mixed beam MXB6.

[0179] As a result, each of the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 can equally obtain an energy of 25(4 / 6) from the first original laser beam RLB1.

[0180] Next, as Figure 12 shown in the second schematic diagram G2 in

[0181] the second coupled beam CPB2 with an energy of 100 can also be split in the same way as the first coupled beam CPB1 to form the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6.

[0182] Next, as Figure 12 shown in the third schematic diagram G3 in

[0183] the third coupled beam CPB3 with an energy of 200 can be split by the first separator SPL11 at the first position into a laser beam with an energy of 100 and a laser beam with an energy of 100'.

[0184] The laser beam with an energy of 100 can be split by the second separator SPL21 into a laser beam with an energy of 100(4 / 6) and a laser beam with an energy of 100(2 / 6). The laser beam with an energy of 100(2 / 6) can be split by the first separator SPL11 at the second position into two laser beams each with an energy of 100(1 / 6).

[0185] The laser beam with an energy of 100(4 / 6) can be included in the first mixed beam MXB1. The laser beam with an energy of 100(1 / 6) and the laser beam with an energy of 100(3 / 6)' can be combined with each other and included in the second mixed beam MXB2 and the third mixed beam MXB3.

[0186] Next, as shown in the sixth schematic diagram G6 in Figure 12 the sixth coupled light beam CPB6 with an energy of 200 can be split by the second separator SPL21 into a laser beam with an energy of 200(1 / 3) and a laser beam with an energy of 200(2 / 3).

[0187] The laser beam with an energy of 200(2 / 3) can be split by the first separator SPL11 into two laser beams each with an energy of 200(1 / 3).

[0188] The laser beam with an energy of 200(1 / 3) can be included in the fourth mixed light beam MXB4, the fifth mixed light beam MXB5, and the sixth mixed light beam MXB6.

[0189] As a result, each of the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 can equally obtain 100(4 / 6) of the energy from the fourth original laser beam RLB4, the fifth original laser beam RLB5, the ninth original laser beam RLB9, and the tenth original laser beam RLB10. That is to say, each of the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 can obtain 25(4 / 6) of the energy from the fourth original laser beam RLB4, 25(4 / 6) of the energy from the fifth original laser beam RLB5, 25(4 / 6) of the energy from the ninth original laser beam RLB9, and 25(4 / 6) of the energy from the tenth original laser beam RLB10.

[0190] Next, as shown in the fourth schematic diagram G4 in Figure 12 the fourth coupled light beam CPB4 with an energy of 200 can be split by the first separator SPL11 at the first position into a laser beam with an energy of 100 and a laser beam with an energy of 100'.

[0191] The laser beam with an energy of 100 can be split by the second separator SPL21 into a laser beam with an energy of 100(4 / 6) and a laser beam with an energy of 100(2 / 6). The laser beam with an energy of 100(2 / 6) can be split by the first separator SPL11 at the second position into two laser beams each with an energy of 100(1 / 6).

[0192] The laser beam with an energy of 100' can be split by the first separator SPL11 at the second position into two laser beams each with an energy of 100(3 / 6)'.

[0193] A laser beam with an energy of 100(4 / 6) can be included in the fourth mixed beam MXB4. A laser beam with an energy of 100(1 / 6) and a laser beam with an energy of 100(3 / 6)' can be combined with each other and included in the fifth mixed beam MXB5 and the sixth mixed beam MXB6.

[0194] Next, as Figure 12 shown in the fifth schematic diagram G5 in

[0195] The fifth coupling beam CPB5 with an energy of 200 can be split by the second separator SPL21 into a laser beam with an energy of 200(1 / 3) and a laser beam with an energy of 200(2 / 3).

[0196] The laser beam with an energy of 200(1 / 3) can be included in the first mixed beam MXB1, the second mixed beam MXB2, and the third mixed beam MXB3.

[0197] As a result, each of the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 can equally obtain an energy of 100(4 / 6) from the second original laser beam RLB2, the third original laser beam RLB3, the seventh original laser beam RLB7, and the eighth original laser beam RLB8. In such an embodiment, as described above, each of the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 can obtain an energy of 25(4 / 6) from the second original laser beam RLB2, an energy of 25(4 / 6) from the third original laser beam RLB3, an energy of 25(4 / 6) from the seventh original laser beam RLB7, and an energy of 25(4 / 6) from the eighth original laser beam RLB8.

[0198] In such an embodiment, as shown in the first schematic diagram G1 to the sixth schematic diagram G6, the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 can each receive 25(4 / 6) of the energy equally from the first original laser beam RLB1 to the tenth original laser beam RLB10. Accordingly, the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 can have substantially the same energy intensity. The display device manufacturing apparatus 1000 according to the embodiment can use the beam mixing unit 300 to generate the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 having the same energy to form the final laser beam FLB having uniform energy. Accordingly, the vertical non-uniformity phenomenon that may occur in the silicon thin film during the annealing process can be effectively prevented.

[0199] In the display device manufacturing apparatus 1000 according to the embodiment, it is desirable that the first to sixth mixed light beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 have the same energy intensity and also equally include the first original laser beam RLB1 to the tenth original laser beam RLB10 in terms of energy.

[0200] Figure 13 is a cross-sectional view illustrating a beam mixing unit, a micro smoother, an optical module, a sealing box, a cavity, and a base frame according to an embodiment. Figure 14 is a perspective view illustrating a beam mixing unit, a micro smoother, and an optical module according to an embodiment.

[0201] Except Figure 5 and Figure 6 In addition, with reference to Figure 13 and Figure 14 in the embodiment, the mixed light beam MXB generated in the beam mixing unit 300 can reach the target substrate 10 through the micro smoother 400, the optical module 500, the sealing box 600, and the cavity 700.

[0202] The micro smoother 400 can be disposed on one side of the beam mixing unit 300. In the embodiment, for example, the micro smoother 400 can be disposed on one side of the beam mixing unit 300 in the first direction DR1. The micro smoother 400 can include a first micro smoother 410 and a second micro smoother 420. The micro smoother 400 will be described later with reference to Figure 15 and Figure 16

[0203] The optical module 500 may be disposed on the beam mixing unit 300 and the micro smoother 400. In an embodiment, for example, the optical module 500 may be disposed on one side of the beam mixing unit 300 and the micro smoother 400 in the third direction DR3. The optical module 500 may include at least one selected from a phase retarder, a lens, and a mirror. The optical module 500 may adjust the moving path and the traveling direction of the laser beam. The optical module 500 may supply the laser beam provided by the micro smoother 400 to the cavity 700.

[0204] The optical module 500 may include a first optical module 510, a second optical module 520, a third optical module 530, a fourth optical module 540, and a fifth optical module 550.

[0205] The first optical module 510 may be disposed on the micro smoother 400. The second optical module 520 may be disposed on the beam mixing unit 300. The fourth optical module 540 and the fifth optical module 550 may be disposed on the cavity 700. The third optical module 530 may be disposed between the second optical module 520 and the fourth optical module 540.

[0206] The first to third optical modules 510, 520, and 530 may be disposed in the first section SECT1. The fourth optical module 540 and the fifth optical module 550 may be disposed in the second section SECT2. The second section SECT2 may be a region in which the cavity 700 is disposed, and the first section SECT1 may be a region disposed on one side of the second section SECT2 and may be a region in which the cavity 700 is not disposed.

[0207] In some embodiments, the third optical module 530 and the fourth optical module 540 may be disposed to be spaced apart from each other. In an embodiment, for example, the third optical module 530 and the fourth optical module 540 may be disposed to be spaced apart from each other by a predetermined distance D_500 in the first direction DR1. In another embodiment, all of the first to fifth optical modules 510, 520, 530, 540, and 550 may be disposed to be spaced apart.

[0208] In the display device manufacturing apparatus 1000 according to an embodiment, the third optical module 530 and the fourth optical module 540 may be disposed to be separated from each other such that the vibration occurring in the first section SECT1 is significantly reduced or minimized from being transferred to the second section SECT2.

[0209] In some embodiments, although not illustrated in the drawings, the display device manufacturing apparatus 1000 may further include a wave plate.

[0210] The wave plate can be disposed between the beam mixing unit 300 and the optical module 500. In an embodiment, for example, the wave plate can be disposed between the beam mixing unit 300 and the first micro smoother 410, between the first micro smoother 410 and the second micro smoother 420, or between the second micro smoother 420 and the optical module 500.

[0211] In some embodiments, wave plates can be respectively disposed in the paths of the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6. In such an embodiment, the number of wave plates can be 6, but is not limited thereto, and the number of wave plates can be less than or more than the number of the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6.

[0212] The wave plate can adjust the polarization degree of the final laser beam FLB by adjusting the polarization degree of the mixed beam MXB. In an embodiment, for example, the wave plate can make at least one selected from the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 be S-polarized (vertically polarized) and the rest be P-polarized (horizontally polarized). In an embodiment, for example, the wave plate can make three of the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6 be S-polarized and the remaining three thereof be P-polarized.

[0213] By including the wave plate, the display device manufacturing apparatus 1000 according to the embodiment can uniformly include an S-polarized beam and a P-polarized beam in the final laser beam FLB. Accordingly, the extension directions of the annealed silicon thin film particles are uniformly distributed in the long axis direction Lx and the short axis direction Ly, so that the reliability of the silicon thin film can be improved.

[0214] The sealing box 600 can be disposed below the optical module 500. The cavity 700 can be disposed below the sealing box 600. The sealing box 600 and the cavity 700 will be described later with reference to Figures 17 to 20 Describe the sealing box 600 and the cavity 700.

[0215] The display device manufacturing apparatus 1000 according to the embodiment can further include a base frame 800.

[0216] The base frame 800 can include a first-stage frame 810, a second-stage frame 820, a third-stage frame 830, and a fourth-stage frame 840.

[0217] The first - stage frame 810 may include a plurality of bases. The plurality of bases of the first - stage frame 810 may be arranged to be spaced apart along the first direction DR1. However, the present disclosure is not limited thereto, and the plurality of bases of the first - stage frame 810 may be arranged to be spaced apart along the second direction DR2. Since the first - stage frame 810 includes a plurality of bases spaced apart from each other, the vibration transfer between components can be significantly reduced or minimized.

[0218] The second - stage frame 820 may be disposed on the first - stage frame 810. The second - stage frame 820 may include an integrally - formed base (i.e., a base integrally formed as a single integral and indivisible part). Since the second - stage frame 820 includes an integrally - formed base, the load of the devices disposed on the top can be dispersed.

[0219] The third - stage frame 830 may be disposed on the second - stage frame 820. The third - stage frame 830 may include a plurality of bases. The plurality of bases of the third - stage frame 830 may be arranged to be spaced apart along the first direction DR1. However, the present disclosure is not limited thereto, and the plurality of bases of the third - stage frame 830 may be arranged to be spaced apart along the second direction DR2. Since the third - stage frame 830 includes a plurality of bases spaced apart from each other, the vibration transfer between components can be significantly reduced or minimized.

[0220] In some embodiments, although not illustrated in the drawings, the extending directions of the plurality of bases of the first - stage frame 810 and the extending directions of the plurality of bases of the third - stage frame 830 may be different from each other. In an embodiment, for example, the extending direction of the plurality of bases of the first - stage frame 810 may be in the first direction DR1, and the extending direction of the plurality of bases of the third - stage frame 830 may be in the second direction DR2. In another embodiment, for example, the extending direction of the plurality of bases of the first - stage frame 810 may be in the second direction DR2, and the extending direction of the plurality of bases of the third - stage frame 830 may be in the first direction DR1. In the base frame 800 according to the embodiment, the extending directions of the plurality of bases of the first - stage frame 810 and the extending directions of the plurality of bases of the third - stage frame 830 may be set differently from each other so that the load of the devices disposed on the top can be dispersed.

[0221] The fourth - stage frame 840 may be disposed on the third - stage frame 830. The fourth - stage frame 840 may include a first base 841 and a second base 842. The first base 841 may be disposed in the first section SECT1, and the second base 842 may be disposed in the second section SECT2.

[0222] The first base 841 can support the beam mixing unit 300, the micro smoother 400, the first optical module 510, the second optical module 520, and the third optical module 530. In an embodiment, for example, the first base 841 can overlap with the beam mixing unit 300, the micro smoother 400, the first optical module 510, the second optical module 520, and the third optical module 530 in the third direction DR3.

[0223] The second base 842 can support the fourth optical module 540, the fifth optical module 550, the sealed box 600, and the cavity 700. In an embodiment, for example, the second base 842 can overlap with the fourth optical module 540, the fifth optical module 550, the sealed box 600, and the cavity 700 in the third direction DR3.

[0224] The first base 841 and the second base 842 can be arranged to be spaced apart from each other. In an embodiment, for example, the first base 841 and the second base 842 can be arranged to be spaced apart from each other by a predetermined distance D_800 in the first direction DR1.

[0225] In the display device manufacturing apparatus 1000 according to an embodiment, the first base 841 and the second base 842 can be arranged to be spaced apart from each other so that the transfer of vibrations occurring in the apparatus or vibrations occurring around the apparatus can be significantly reduced or minimized.

[0226] Figure 15 is a cross-sectional view illustrating a micro smoother according to an embodiment. Figure 16 is a perspective view illustrating a method of operating a micro smoother according to an embodiment.

[0227] Except Figure 5 , Figure 6 , Figure 13 and Figure 14 In addition, with reference to Figure 15 and Figure 16 , embodiments of the micro smoother 400 can include a first micro smoother 410 and a second micro smoother 420. The first micro smoother 410 and the second micro smoother 420 can be arranged to be spaced apart from each other along the path direction Lz of the mixed beam MXB.

[0228] Each of the first micro smoother 410 and the second micro smoother 420 can include a smoother cover (also simply referred to as a cover) 401, a floating box 402, an elastic tube 403, a smoother optical module 404, a weight 405, and a smoother driver 406.

[0229] The smoother cover 401 can provide a space in which the floating box 402, the elastic tube 403, and the smoother optical module 404 are disposed. Nitrogen (N 2)The gas is filled in the space divided by the smoother cover 401. Accordingly, it is possible to effectively prevent external shocks from being transmitted to the smoother optical module 404 inside the floating box 402, or to prevent vibrations inside the micro-smoother 400 from being transmitted to other components of the display device manufacturing apparatus 1000.

[0230] The floating box 402 may be disposed in the space divided (or enclosed) by the smoother cover 401. The floating box 402 may float within the space divided by the smoother cover 401. In an embodiment, for example, the floating box 402 may be an air bearing box or an air floating box. As the floating box 402 floats, it is possible to effectively prevent external shocks from being transmitted to the smoother optical module 404 inside the floating box 402, or to prevent vibrations inside the micro-smoother 400 from being transmitted to other components of the display device manufacturing apparatus 1000.

[0231] The elastic tube 403 may be connected to the inner surface of the smoother cover 401 and the outer surface of the floating box 402. In Figure 15 the figure, for ease of illustration, four elastic tubes 403 are shown, but the number of elastic tubes 403 is not limited thereto. The elastic tube 403 can effectively prevent the floating floating box 402 from moving excessively.

[0232] The smoother optical module 404 may adjust the movement path and traveling direction of the mixed beam MXB. In an embodiment, for example, the smoother optical module 404 may include small and lightweight optical devices. In an embodiment, the smoother optical module 404 included in the first micro-smoother 410 may be a telescope lens. In an embodiment, the smoother optical module 404 included in the second micro-smoother 420 may be a beam homogenizer. The telescope lens of the first micro-smoother 410 and the beam homogenizer of the second micro-smoother 420 may adjust the movement path and traveling direction in the long axis direction Lx, but are not limited thereto, and may also adjust the movement path and traveling direction in the short axis direction Ly.

[0233] In some embodiments, all of the first micro-smoother 410 and the second micro-smoother 420 may be driven, or only one of the first micro-smoother 410 and the second micro-smoother 420 may be driven.

[0234] The small and lightweight optical devices included in the smoother optical module 404 may correspond to each of the plurality of mixed beams MXB. In an embodiment, for example, a total of six small and lightweight optical devices may be provided corresponding to the first to sixth mixed beams MXB1, MXB2, MXB3, MXB4, MXB5, and MXB6, respectively. The number of small and lightweight optical devices may be variously modified depending on the number of mixed beams MXB.

[0235] The heavy object 405 can support the smoother cover 401. The heavy object 405 can prevent the smoother cover 401 from vibrating due to external impacts.

[0236] The smoother driver 406 can provide a driving force to the floating box 402. The smoother driver 406 can provide a driving force to move the smoother optical module 404 in the long axis direction Lx of the laser beam. In an embodiment, for example, the smoother driver 406 can provide a driving force to move the floating box 402 along the second direction DR2. However, the present disclosure is not limited thereto, and the smoother driver 406 can provide a driving force such that the floating box 402 moves along the first direction DR1.

[0237] The micro smoother 400 can be a device that regularly or irregularly generates vibrations of the laser beam. By intentionally vibrating the laser beam by means of the micro smoother 400, horizontal non-uniformities that may occur during the crystallization of the silicon thin film can be effectively prevented.

[0238] In an embodiment, for example, as described above with reference to Figure 4A As described, the final laser beam FLB can have a flat-top profile shape. However, when there are some uneven step portions in the flat-top shape or there are particles etc. in the path of the laser beam, an energy imbalance may occur in a part of the laser beam due to the step portions or particles etc. In this way, when a certain area of the substrate is irradiated with a part of the laser beam in which such an energy imbalance has occurred to perform scanning, horizontal non-uniformities may occur along the part in which the imbalance has occurred.

[0239] In the display device manufacturing apparatus 1000 according to an embodiment, the first micro smoother 410 and the second micro smoother 420 can be driven in the long axis direction Lx. In an embodiment, for example, the first micro smoother 410 and the second micro smoother 420 can perform regular or irregular vibration motions in the long axis direction Lx. Accordingly, the central hitting point CH of the final laser beam FLB can deviate from the center line CL of the target substrate 10 by a first vibration distance D_400 in the long axis direction Lx. In an embodiment, the first vibration distance D_400 can be in the range of about 30 mm to about 60 mm. In an embodiment, for example, the first vibration distance D_400 can be in the range of about 40 mm to about 50 mm.

[0240] In this way, by intentionally vibrating the laser beam by the micro smoother 400, it is possible to effectively prevent a specific hitting point from continuously moving along the short axis direction Ly (i.e., the scanning direction) and forming horizontal non-uniformities, and to cancel the energy imbalance. Accordingly, the occurrence of horizontal non-uniformities can be effectively prevented.

[0241] In an embodiment, as described above, the laser beam of the display device manufacturing apparatus 1000 may have a high repetition rate. Accordingly, the number of times the final laser beam FLB irradiates the target substrate 10 may increase. Accordingly, it is desirable to drive the micro smoother 400 at high speed according to the number of irradiations of the final laser beam FLB. The micro smoother 400 according to an embodiment may achieve high-speed driving by including small and lightweight optical devices. In an embodiment, the frequency of the smoother driver 406 may be in the range of about 50 Hertz (Hz) to about 250 Hertz (Hz).

[0242] In some embodiments, the target substrate 10 may be directly driven in the long-axis direction Lx. Accordingly, the center hitting point CH of the final laser beam FLB may deviate from the center line CL of the target substrate 10 by a first vibration distance D_400 in the long-axis direction Lx. In an embodiment, the driving speed of the target substrate 10 may be the same as the scanning speed of the target substrate 10. In an embodiment, for example, the driving speed of the target substrate 10 may be about 20 millimeters per second (mm / s). However, the present disclosure is not limited thereto, and the driving speed of the target substrate 10 may be faster than the scanning speed of the target substrate 10. In this case, the driving speed of the target substrate 10 may be about 30 mm / s.

[0243] Figure 17 is a cross-sectional view illustrating an optical module, a seal box, and a cavity according to an embodiment. Figure 18 is a cross-sectional view illustrating an operation method of a beam cutter according to an embodiment. Figure 19 is a plan view illustrating a fixing chuck and a target substrate according to an embodiment. Figure 20 is a perspective view illustrating a profiler, a power meter, and a measurement aperture according to an embodiment.

[0244] Except Figure 5 , Figure 6 and Figure 13 in addition to, reference is also made to Figures 17 to 20 , the laser beam passing through the optical module 500 may further pass through the seal box 600 and reach the cavity 700.

[0245] The seal box 600 may provide a space for processing the final laser beam FLB passing through the optical module 500. In an embodiment, the seal box 600 may include a seal box window 610, a beam cutter 620, and a beam collector 630.

[0246] The sealed box window 610 can be disposed between the optical module 500 and the sealed box 600. In an embodiment, for example, the sealed box window 610 can be disposed on a partition wall located between the optical module 500 and the sealed box 600. The sealed box window 610 can be an optical channel through which the final laser beam FLB passing through the optical module 500 can move into the interior of the sealed box 600. The sealed box window 610 can include, or be made of, a material that allows the final laser beam FLB to pass through it.

[0247] The beam cutter 620 can adjust the major axis dimension Dx of the final laser beam FLB. The beam cutter 620 can overlap at least a portion of the final laser beam FLB in the path direction Lz of the laser beam. The beam cutter 620 can reflect at least a portion of the final laser beam FLB and transmit the remaining portion thereof.

[0248] In an embodiment, for example, the beam cutter 620 can include a first portion 621 and a second portion 622 that are arranged to be spaced apart from each other in the major axis direction Lx of the laser beam, and a third portion 623 disposed between the first portion 621 and the second portion 622.

[0249] The first portion 621 and the second portion 622 of the beam cutter 620 can be reflection regions, and the third portion 623 can be a transmission region. In an embodiment, the first portion 621 and the second portion 622 can include mirrors, and the third portion 623 can include a transmission window. In another embodiment, the first portion 621 and the second portion 622 can be treated with a high reflection (HR) coating (or include a high reflection coating film), and the third portion 623 can be treated with an anti-reflection (AR) coating (or include an anti-reflection (AR) coating film).

[0250] The first portion 621 of the beam cutter 620 can overlap one end FLB1a of the final laser beam FLB1 before processing in the path direction Lz. The second portion 622 of the beam cutter 620 can overlap the other end FLB1b of the final laser beam FLB1 before processing in the path direction Lz. The third portion 623 of the beam cutter 620 can overlap the central portion FLB1c located between one end FLB1a and the other end FLB1b of the final laser beam FLB1 before processing in the path direction Lz.

[0251] One end FLB1a and the other end FLB1b of the final laser beam FLB1 before processing can be reflected from the first part 621 and the second part 622 of the beam cutter 620 respectively, and the central part FLB1c of the final laser beam FLB1 before processing can pass through the third part 623. The transmitted central part FLB1c can form the final laser beam FLB2 after processing by adjusting the major axis dimension Dx. The final laser beam FLB2 after processing can reach the target substrate 10.

[0252] In some embodiments, the beam cutter 620 may include only one of the first part 621 and the second part 622. In such an embodiment, the beam cutter 620 may reflect only one of one end FLB1a and the other end FLB1b of the final laser beam FLB to adjust the major axis dimension Dx of the final laser beam FLB.

[0253] In an embodiment, the reflective surfaces of the first part 621 and the second part 622 of the beam cutter 620 may include heat-resistant materials. In an embodiment, for example, the reflective surfaces of the first part 621 and the second part 622 of the beam cutter 620 may include glass. Since the display device manufacturing apparatus 1000 according to the embodiment uses a laser beam with a high repetition rate and high energy, the reflective surfaces of the first part 621 and the second part 622 may continuously receive energy from the laser before the temperature cools down despite having a cooling system. Since the reflective surfaces of the first part 621 and the second part 622 include heat-resistant materials, thermal deformation due to temperature rise can be effectively prevented.

[0254] The beam collector 630 may attenuate or eliminate the energy of the laser beam reflected from the beam cutter 620 and the laser beam reflected from the measurement aperture 770. The beam collector 630 may include a mirror located on the inner surface of the beam collector 630. The beam collector 630 may further include a cooling system (also referred to as a cooler) such as a coolant located inside the beam collector 630.

[0255] In an embodiment, for example, one end FLB1a and the other end FLB1b of the final laser beam FLB1 before processing reflected from the first part 621 and the second part 622 of the beam cutter 620 may move inside the beam collector 630. The laser beam entering the beam collector 630 may be continuously reflected by the mirror inside the beam collector 630 and may collide with the cooling system. Accordingly, the energy of the laser beam may be attenuated or eliminated.

[0256] In an embodiment, the chamber 700 may include a chamber window 710, a stage 720, a fixing chuck 730, a stage driver 740, a profiler 750, a power meter 760, and a measurement aperture 770.

[0257] The cavity window 710 may be disposed between the sealed chamber 600 and the cavity 700. In an embodiment, for example, the cavity window 710 may be disposed on a partition wall located between the sealed chamber 600 and the cavity 700. The cavity window 710 may be an optical passage through which the final laser beam FLB passing through the sealed chamber 600 may move into the interior of the cavity 700. The cavity window 710 may include or be made of a material that allows the final laser beam FLB to pass through it.

[0258] The stage 720 may be disposed inside the cavity 700. The stage 720 may provide a space in which the target substrate 10 is placed. In an embodiment, for example, during the annealing process, the target substrate 10 may be placed on the stage 720.

[0259] The fixing chuck 730 may be disposed on the stage 720. The fixing chuck 730 may fix the target substrate 10 to the stage 720 such that the target substrate 10 does not separate from the stage 720 during the annealing process. In an embodiment, the fixing chuck 730 may be a vacuum chuck that uses suction force. In another embodiment, the fixing chuck 730 may be an electrostatic chuck that uses electromagnetic force. However, the present disclosure is not limited thereto, and the fixing chuck 730 may include any device capable of fixing the target substrate 10 to the stage 720.

[0260] In some embodiments, as Figure 19 shown, the fixing chuck 730 may be larger than the target substrate 10. The target substrate 10 may include a laser irradiation area LSA and a laser non-irradiation area NLSA. The laser irradiation area LSA may be an area irradiated by the final laser beam FLB, and the laser non-irradiation area NLSA may be an area not irradiated by the final laser beam FLB.

[0261] In some embodiments, the fixing chuck 730 may not apply a fixing force to the target substrate 10 in an area overlapping with the laser irradiation area LSA, and may apply a fixing force to the target substrate 10 in an area overlapping with the laser non-irradiation area NLSA.

[0262] In an embodiment, for example, depending on the roughness of the surface of the fixing chuck 730 on which the fixing chuck 730 and the target substrate 10 are in contact, conical non-uniformity may occur due to the height difference caused by the roughness. The fixing chuck 730 according to the embodiment may effectively prevent conical non-uniformity caused by the surface roughness of the fixing chuck 730 by not applying a fixing force in an area overlapping with the laser irradiation area LSA.

[0263] The stage driver 740 can provide a driving force to the stage 720. In an embodiment, for example, the stage driver 740 can move the stage 720 in the first direction DR1 or the short-axis direction Ly. In another embodiment, for example, the stage driver 740 can move the stage 720 in the second direction DR2 or the long-axis direction Lx. In another embodiment, for example, the stage driver 740 can move the stage 720 in the third direction DR3 or the path direction Lz.

[0264] The profiler 750 can measure the energy profile of the final laser beam FLB. In an embodiment, for example, the profiler 750 can measure the pulse shape of the final laser beam FLB that reaches the target substrate 10.

[0265] The power meter 760 can measure the energy power of the final laser beam FLB. In an embodiment, for example, the power meter 760 can measure the energy density of the final laser beam FLB that reaches the target substrate 10. In such an embodiment, at least one selected from the profiler 750 and the power meter 760 can be individually or collectively referred to as a measuring instrument.

[0266] The measurement aperture 770 can adjust the shape and size of the final laser beam FLB that reaches the profiler 750 and the power meter 760. When the final laser beam FLB provided to the target substrate 10 directly irradiates the profiler 750 and the power meter 760, the profiler 750, the power meter 760, and nearby devices may be damaged by the high energy of the final laser beam FLB. The measurement aperture 770 according to an embodiment can effectively prevent such damage by adjusting the shape and size of the final laser beam FLB.

[0267] As Figure 20 shown, the measurement aperture 770 can overlap with the processed final laser beam FLB2 in the path direction Lz after passing through the beam cutter 620. The measurement aperture 770 can reflect at least a part of the processed final laser beam FLB2 and transmit the remaining part.

[0268] In an embodiment, for example, the measurement aperture 770 can include a reflection region 770a and a transmission region 770b. The transmission region 770b can overlap with the beam receiving part (not shown) of the profiler 750 and the beam receiving part (not shown) of the power meter 760 in the path direction Lz. In some embodiments, the reflection region 770a can surround the transmission region 770b, but is not limited thereto.

[0269] In an embodiment, the reflection region 770a may include a mirror, and the transmission region 770b may include a hole or a transmission window. In another embodiment, the reflection region 770a may be treated with a high-reflection (HR) coating (or include a high-reflection coating film), and the transmission region 770b may be treated with an antireflection (AR) coating (or include an antireflection (AR) coating film).

[0270] The reflection region 770a may overlap with a portion FLB2a of the processed final laser beam FLB2 in the path direction Lz. The transmission region 770b may overlap with another portion FLB2b of the processed final laser beam FLB2 in the path direction Lz.

[0271] A portion FLB2a of the processed final laser beam FLB2 may be reflected in the reflection region 770a, and another portion FLB2b of the processed final laser beam FLB2 may be transmitted in the transmission region 770b. The shape and size of the transmitted another portion FLB2b may be adjusted to form a reduced final laser beam FLB3. The reduced final laser beam FLB3 may reach the beam receiving portion (not shown) of the profiler 750 and the beam receiving portion (not shown) of the power meter 760.

[0272] The reflected portion FLB2a may move inside the beam collector 630, and its energy may be attenuated or eliminated in the same manner as the laser beam reflected from the beam cutter 620.

[0273] By including the measurement aperture 770, the display device manufacturing apparatus 1000 according to the embodiment can effectively prevent the final laser beam FLB from reaching other portions other than the beam receiving portion (not shown) of the profiler 750 and the beam receiving portion (not shown) of the power meter 760, and thus can minimize device damage.

[0274] The display device manufacturing apparatus 1000 according to the embodiment is a solid-state laser annealing apparatus that uses a laser having high energy and a high repetition rate compared to an excimer laser annealing apparatus, and has a fast process speed compared to an excimer laser annealing apparatus, so that an optical system configuration and other device designs suitable for such characteristics are desired.

[0275] Figure 21 is a microscopic image illustrating the particles of a polysilicon thin film according to a conventional embodiment. Figure 22 is a microscopic image illustrating the particles of a polysilicon thin film according to an embodiment. Figure 23 is a photograph illustrating a macroscopic inspection of a polysilicon thin film according to a conventional embodiment. Figure 24 is a photograph illustrating a macroscopic inspection of a polysilicon thin film according to an embodiment.

[0276] Reference Figures 21 to 24 , Figure 21 and Figure 23 are photographs of a polysilicon thin film 12 annealed using an excimer laser annealing apparatus as a display device manufacturing apparatus according to a conventional embodiment. Figure 22 and Figure 24 are photographs of a polysilicon thin film 12 annealed using a solid-state laser annealing apparatus as a display device manufacturing apparatus 1000 according to an embodiment.

[0277] As Figure 21 shown, the average value of the first particle size R1 of the polysilicon thin film 12 manufactured using a display device manufacturing apparatus according to a conventional embodiment can be within approximately 310 nm. On the other hand, as Figure 22 shown, the average value of the second particle size R2 of the polysilicon thin film 12 manufactured using a display device manufacturing apparatus 1000 according to an embodiment can be within approximately 340 nm.

[0278] The display device manufacturing apparatus according to a conventional embodiment is an excimer laser annealing apparatus, and since the laser wavelength is in the range of approximately 300 nm to approximately 315 nm, the average value of the first particle size R1 can be approximately 310 nm or less. On the other hand, the display device manufacturing apparatus 1000 according to an embodiment is a solid-state laser annealing apparatus, and since the laser wavelength is in the range of approximately 337 nm to approximately 357 nm, the average value of the second particle size R2 can be approximately 340 nm or less.

[0279] In addition, the standard deviation of the second particle size R2 can be smaller than the standard deviation of the first particle size R1 of the polysilicon thin film 12 manufactured using a display device manufacturing apparatus according to a conventional embodiment. Compared with the display device manufacturing apparatus according to a conventional embodiment, the display device manufacturing apparatus 1000 according to an embodiment can have high energy, a high repetition rate, and a fast process speed, such that the particle size distribution can be more uniform.

[0280] As Figure 23 shown, the polysilicon thin film 12 manufactured using a display device manufacturing apparatus according to a conventional embodiment may include vertical non-uniformity. On the other hand, as Figure 24 shown, the polysilicon thin film 12 manufactured using a display device manufacturing apparatus 1000 according to an embodiment may not include vertical non-uniformity.

[0281] In the display device manufacturing apparatus 1000 according to an embodiment, compared with the display device manufacturing apparatus according to a conventional embodiment, due to characteristics such as a short scan interval, a high irradiation count, high energy, and a high frequency, vertical non-uniformity may not occur.

[0282] In addition, the display device manufacturing apparatus 1000, which is a solid-state laser annealing apparatus according to an embodiment, can operate without performing complex apparatus operations such as stage tilting, a scan interval that is an integer multiple of the thin film transistor arrangement pitch, and stage vector driving, which are used in an excimer laser annealing apparatus to effectively prevent vertical non-uniformity, so that process efficiency and high crystallization quality can be achieved.

[0283] The present invention should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the present invention to those skilled in the art.

[0284] Although the present invention has been specifically shown and described with reference to embodiments of the present invention, those of ordinary skill in the art will understand that various changes in form and detail may be made therein without departing from the spirit or scope of the present invention as defined by the claims.

Claims

1. An apparatus for manufacturing a display device, the apparatus comprising: cavity; A laser module, comprising a plurality of laser generators that use solid materials as media to respectively generate a plurality of original laser beams; A beam coupling module, combining the multiple original laser beams into multiple coupled beams; A beam mixing unit, which converts the multiple coupled beams into multiple mixed beams; a micro-smoothener causing a vibrational motion of the plurality of mixed light beams; an optical module that converts the plurality of mixed light beams passing through the micro-smoother into a final laser beam and directs the final laser beam to the cavity; as well as A sealing box is arranged between the optical module and the cavity.

2. The device according to claim 1, wherein: The major axis dimension of the final laser beam is in the range of 1000 mm to 2000 mm, The minor axis dimension of the final laser beam is in the range of 95 microns to 110 microns, and The final laser beam has a tilted surface dimension in the range of 30 microns to 45 microns.

3. The device according to claim 1, wherein: The total laser output power of the laser module is in the range of 5760 watts to 9000 watts. The output power of each of the plurality of laser generators is in the range of 600 watts to 900 watts, and An oscillation frequency of each of the plurality of laser generators is in a range of 5000 Hz to 15000 Hz.

4. The device according to claim 1, wherein: Each of the plurality of original laser beams is a laser beam in the ultraviolet region, and The wavelength of each of the plurality of original laser beams is in the range of 337 nanometers to 357 nanometers.

5. The device according to claim 1, wherein: The beam coupling module comprises: a shutter receiving the plurality of original laser beams; and a photodiode and a beam monitor for monitoring the plurality of primary laser beams, Wherein, the operating speed of the shutter is in the range of 20 milliseconds to 100 milliseconds.

6. The device according to claim 1, wherein: The beam coupling module comprises: a scraper unit that generates the plurality of coupled beams, wherein the scraper unit groups the plurality of original laser beams to be included in the plurality of coupled beams; A telescope unit is provided to adjust the divergence degree of the plurality of coupled light beams; and A group coupling unit provides the multiple coupled light beams to the light beam mixing unit.

7. The device according to claim 6, wherein: The scraper unit includes a pre-mixer, and The premixer transmits and reflects the incident plurality of original laser beams at a ratio of 1:

1.

8. The device according to claim 6, wherein: The beam coupling module further includes a pulse stretcher module disposed between the group coupling unit and the beam mixing unit, wherein the pulse stretcher module stretches a pulse duration of the final laser beam.

9. The device according to claim 1, wherein: The beam mixing unit comprises: a reflector, reflecting the plurality of coupled light beams incident on the reflector; a first splitter that transmits and reflects the plurality of coupled light beams at a ratio of 1:1; and The second splitter transmits and reflects the multiple coupled light beams at a ratio of 2:

1.

10. The device according to claim 9, wherein: The beam mixing unit generates the plurality of mixed beams by combining the plurality of coupled beams at the same ratio.

11. The device according to claim 1, wherein: The micro-smooth provides a driving force to cause an impact point of the final laser beam to vibrate regularly or irregularly with respect to a direction perpendicular to a scanning direction of the final laser beam.

12. The device according to claim 11, wherein The micro-smoothing device includes at least one selected from the following: A first micro-smooth device including a telescope lens; and The second micro-smooth device includes a beam homogenizer.

13. The device according to claim 11, wherein: The micro smoother comprises: build; a floating box disposed in an inner space of the cover in a floating state; and An elastic tube connects the float tank to the cover.

14. The apparatus of claim 1, further comprising: A first section in which the micro-smooth is located; a second section in which the cavity is located; as well as A base frame is disposed below the cavity and the micro-smoothing device, wherein: The base frame includes a first base disposed in the first section and a second base disposed in the second section, and The first base and the second base are disposed to be spaced apart from each other.

15. The device according to claim 14, wherein: The optical module includes a first sub-optical module disposed in the first section and a second sub-optical module disposed in the second section, and The first sub-optical module and the second sub-optical module are disposed to be spaced apart from each other.

16. The apparatus according to claim 1, wherein: The sealed box comprises: a beam cutter that reflects a portion of the final laser beam and transmits a remaining portion of the final laser beam; and A beam dump attenuates or eliminates energy of the portion of the final laser beam reflected from the beam cutter.

17. The device according to claim 16, wherein: The beam cutter includes a reflective region that reflects the portion of the final laser beam, and The surface of the reflective area includes glass.

18. The apparatus according to claim 16, wherein: The beam dump comprises: a reflector disposed on an inner surface of the beam dump; and A cooler is arranged inside the beam dumper.

19. The apparatus according to claim 1, wherein: The cavity comprises: a measuring instrument for measuring the profile or power of the final laser beam; and A measuring aperture is disposed on the measuring instrument, wherein the measuring aperture reflects a portion of the final laser beam and transmits a remaining portion of the final laser beam.

20. The apparatus of claim 19, wherein: The measuring aperture comprises: a reflective region that reflects the portion of the final laser beam; and a transmission region transmitting the remaining portion of the final laser beam, The reflective region includes a highly reflective coating film, and The transmissive region includes an anti-reflective coating or holes.

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