Sensing device

Abstract

The sensing device may include a first sensor of a first type. The first sensor may include a first conductive element, a second conductive element, and a reactive material between the first conductive element and the second conductive element. The sensing device also includes a second sensor of a second type, which may be different from the first type. The second sensor may use the first conductive element as a conductive element of the second sensor.

Description

Technical Field

[0001] The embodiments discussed herein relate to a sensing device. Background Art

[0002] Sensors can be used to collect information or data. In some cases, sensors can be used to allow a user to interact with a system. For example, capacitive sensors in a touch screen can be used to allow a user to interact with the graphical user interface of a device. As another example, force-sensitive sensors can be used to allow a user to interact with the graphical user interface of a device. Sensors can be used to allow a user to interact with a system other than a graphical user interface.

[0003] The subject matter claimed herein is not limited to embodiments that solve any disadvantages or only operate in environments such as those described above. Instead, this background is provided only to illustrate an exemplary technical field in which some embodiments described herein may be practiced. Summary of the Invention

[0004] The sensing device can include a first sensor of a first type. The first sensor can include a first conductive element, a second conductive element, and a reactive material located between the first conductive element and the second conductive element. The sensing device also includes a second sensor of a second type that can be different from the first type. The second sensor can use the first conductive element as a conductive element of the second sensor. Brief Description of the Drawings

[0005] Exemplary embodiments will be described and explained with additional specificity and detail by using the drawings, in which:

[0006] Figure 1 An exemplary sensing device is shown;

[0007] Figure 2 An exploded view of another exemplary sensing device is shown;

[0008] Figure 3 An exploded view of another exemplary sensing device is shown;

[0009] Figure 4 An exploded view of another exemplary sensing device is shown; and

[0010] Figure 5 The conductive material forming part of the sensing device is shown. Detailed Description

[0011] Multiple different types of sensors can be used to determine the interaction of a person or other object with other devices or objects. For example, piezoresistive sensors, piezoelectric sensors, and capacitive sensors can each be used individually to determine the interaction of a person or other object with other devices or objects. Each of these types of sensors can include different configurations. Thus, each of these types of sensors can provide different capabilities in different situations. For example, a capacitive sensor can have a faster response time than a piezoresistive sensor. However, a piezoresistive sensor may be less affected by external conditions (such as changes in environmental conditions). As another example, a piezoresistive sensor may not respond to short interactions as well as a piezoelectric sensor. However, a piezoresistive sensor can provide a better indication of the location of the force to be applied than a piezoelectric sensor.

[0012] Some embodiments of the present disclosure relate to a sensing device configured to combine two or more sensor types in a single integrated sensor stack. For example, the sensing device can include two or more sensor types selected from a group of sensor types including piezoresistive sensors, piezoelectric sensors, and capacitive sensors. The two or more sensor types can be arranged in an overlapping manner in the integrated sensor stack such that an interaction with the integrated sensor stack can cause each sensor in the integrated sensor stack to sense the interaction.

[0013] Figure 1 A sensing device 100 according to some embodiments of the present disclosure is shown. The sensing device 100 includes a sensing region 102, a tail 104, a first pin 106a, a second pin 106b, and a third pin 106c, collectively referred to as connector pins 106.

[0014] In some embodiments, the sensing device 100 can include an integrated sensor stack that includes multiple sensors. For example, the integrated sensor stack can include two or more sensors arranged in an overlapping manner in the integrated sensor stack. For example, the integrated sensor stack can include two or more sensors arranged in a vertically overlapping manner in the integrated sensor stack. For example, the sensing device 100 can include a top surface and a bottom surface of the sensing region 102. In these and other embodiments, two or more sensors can be arranged in a vertically overlapping manner between the top surface and the bottom surface. In these and other embodiments, two or more sensors can be arranged in a vertically overlapping manner such that the two or more sensors are directly located between the top surface and the bottom surface.

[0015] In some embodiments, two or more sensors can be configured such that the coverage area of each of the two or more sensors is the same. In these and other embodiments, the coverage area of a sensor can include the shape and size of the outer periphery of the sensor. Alternatively or additionally, the size of the coverage area of each of the two or more sensors can be within the size range of the coverage areas of the other sensors among the two or more sensors. For example, the size of the coverage area of a sensor can be within 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, or 50% of each other.

[0016] The sensors in the integrated sensor stack can include piezoresistive sensors, piezoelectric sensors, and / or capacitive sensors. For example, the sensing device 100 can include a piezoresistive sensor, a piezoelectric sensor, and a capacitive sensor. Alternatively or additionally, the sensing device 100 can include a piezoresistive sensor and a piezoelectric sensor. Alternatively or additionally, the sensing device 100 can include a piezoresistive sensor and a capacitive sensor. Alternatively or additionally, the sensing device 100 can include a piezoelectric sensor and a capacitive sensor.

[0017] In some embodiments, the piezoelectric sensor in the sensing device 100 can be used to measure strain, tension, bending, vibration, tapping, pressing force, pinching, touch, friction, dragging, twisting, and other sensations that can be applied to the sensing device 100. Alternatively or additionally, the piezoelectric sensor in the sensing device 100 can also be used as a piezoelectric actuator to generate mechanical vibrations to provide haptic feedback, such as feedback that can be felt by a person. In these and other embodiments, the piezoelectric sensor can generate mechanical vibrations in response to an applied waveform (such as an alternating current (AC) voltage) applied to the piezoelectric sensor. Alternatively or additionally, the piezoelectric sensor can also be used as a pyroelectric sensor to detect temperature changes.

[0018] In some embodiments, the piezoelectric sensor in the sensing device 100 can include a polymer piezoelectric material, such as polyvinylidene fluoride (PVDF) or any of its derivatives, and other types of polymer piezoelectric materials. Alternatively or additionally, the piezoelectric sensor in the sensing device 100 can include a ceramic piezoelectric material, such as lead zirconate titanate (PZT) or scandium-doped aluminum nitride (ScAlN), and other types of ceramic piezoelectric materials. In these and other embodiments, the ceramic piezoelectric material can include a thin-film ceramic piezoelectric material.

[0019] In some embodiments, the piezoelectric sensor in the sensing device 100 can be formed using an ink formulation that contains nano-sized or micro-sized particles of a piezoelectric material or a piezoelectric polymer monomer. Other methods of forming the piezoelectric sensor can also be used.

[0020] In some embodiments, the capacitive sensor in the sensing device 100 can be a mutual capacitive sensor or a self-capacitive sensor. The capacitive sensor can be used to measure the proximity, touch, pressing force, pinching, or relative displacement of one surface relative to another surface, as well as other sensations. In some embodiments, the capacitive sensor can be divided into at least two different regions such that these regions can be measured independently. The independent measurement of the regions can be performed simultaneously or sequentially.

[0021] In some embodiments, the force-sensitive resistor sensor (FSR) in the sensing device 100 can be a through-mode FSR, a shunt-mode FSR, or other types of FSR. The FSR sensor can be used to measure the touch, pressing force, pinching, or relative displacement of one surface relative to another surface, as well as other sensations. The FSR sensor can be divided into at least two different regions such that these regions can be measured independently. The independent measurement of the regions can be performed simultaneously or sequentially.

[0022] In some embodiments, at least one layer in the sensing device 100 can be produced via printing. Printing can include screen printing, inkjet printing, slot die printing, spraying, dip printing, bar printing, knife printing, spin coating, gravure printing, roll-to-roll printing, or any common techniques used in printed electronics.

[0023] In some embodiments, at least one sensor in the sensing device 100 can be printed on a common flexible substrate such as polyimide, polyamide, polyethylene terephthalate (PET), polystyrene (PS), polycarbonate (PC), polysulfone (PSU), polyethersulfone (PES), polyphenylene sulfone (PPSU), polyurethane (PU), thermoplastic polyurethane (TPU), silicone, siloxane, natural rubber, thin glass, glass-reinforced epoxy laminate (such as FR-4), printed circuit board (PCB), flexible printed circuit (FPC), thin ceramic, paper, leather, wood, or any material commonly used in printed electronics.

[0024] In some embodiments, silver ink, copper ink, carbon ink, or any combination thereof can be used to print at least one conductive element of the sensing device 100. In some embodiments, the integrated sensor stack can include a common sensing area 102 in which the integrated sensors can sense the interaction with the sensing device 100. In these and other embodiments, each sensor in the sensing device 100 can be configured to sense the interaction within the sensing area 102. For example, the interaction can include a force applied to the sensing area 102, the proximity of an approaching object (such as a user's finger), a quick tap, and other interactions.

[0025] The sensing region 102 can be coupled to the tail 104. The tail 104 can include connector pins 106. Each sensor in the sensing device 100 can be coupled to one or more of the connector pins 106 via the tail 104. For example, conductive material can extend along the tail 104 between the sensors in the sensing region 102 and the connector pins 106.

[0026] In some embodiments, data can be obtained from the sensors via the tail 104 and the connector pins 106. For example, via one or more of the connector pins 106, a device coupled to the connector pins 106 can detect a change in capacitance of a capacitive sensor. Alternatively or additionally, via one or more of the connector pins 106, the amount of resistance of a piezoresistive sensor can be detected. Alternatively or additionally, via one or more of the connector pins 106, the amount of voltage of a piezoelectric sensor can be detected. In some embodiments, the connector pins 106 can be coupled to a computing system via signal processing circuitry.

[0027] As an example of the operation of the sensing device 100, a force can be applied by a part of a human body, such as a finger pressing on the sensing region 102. In these and other embodiments, the capacitive sensor can be configured to sense a change in capacitance within the capacitive sensor before and during interaction with the sensing region 102. For example, when a finger approaches the sensing region 102, the finger can interact with the electric field of one or more conductive materials in the sensing device 100, resulting in a change in capacitance that can be detected by monitoring one or more of the connector pins 106.

[0028] Alternatively or additionally, the piezoelectric sensor can be configured to sense a force applied to the sensing region 102. In these and other embodiments, the piezoelectric sensor can generate a voltage across two electrodes based on the force applied to the piezoelectric material of the piezoelectric sensor. Alternatively or additionally, the piezoresistive sensor or the capacitive sensor can be configured to sense a force applied to the sensing region 102. In these and other embodiments, the piezoresistive sensor can change the resistance between two corresponding electrodes based on the force applied to the piezoresistive sensor, or the capacitive sensor can change the capacitance corresponding to the applied force.

[0029] The combination of three sensors arranged in an overlapping manner in an integrated sensor stack can provide several advantages. For example, a single location in the sensing region 102 can be configured to respond to multiple different types of interactions. For example, a hovering interaction can be sensed by a capacitive sensor. Short interactions or multiple short interactions within a narrow time frame can be sensed by a piezoelectric sensor. Long interactions can be sensed by a piezoresistive sensor. As another example, the piezoelectric sensor can be configured to determine the amount of force, and the piezoresistive sensor can be configured to determine the location of the force. Thus, the integrated sensor stack can provide data regarding the interaction location and the amount of force. Accordingly, a single integrated sensor stack can provide data regarding multiple different types of interactions as well as multiple different types of data for a single interaction.

[0030] In some embodiments, one or more conductive elements of one sensor in the integrated sensor stack of the sensing device 100 can be used as conductive elements of another sensor in the integrated sensor stack. For example, a piezoelectric sensor can include a first electrode and a second electrode. The first electrode of the piezoelectric sensor can also be a conductive element or electrode of a piezoresistive sensor or a capacitive sensor. By sharing conductive elements or electrodes between sensors in the integrated sensor stack, one or more dimensions of the integrated sensor stack can be reduced. Additionally, by sharing conductive elements, a single interaction with the sensing region 102 can be sensed simultaneously or sequentially by multiple sensors in the integrated sensor stack.

[0031] In some embodiments, since different sensors in the integrated sensor stack can operate in different voltage modes and / or frequencies, the processing circuitry coupled to the sensing device 100 can include circuitry for isolating signals from different sensors to detect those signals. Isolation of the signals can help reduce interference between the signals. Additionally, having multiple sensors in a single integrated sensor stack can allow the sensors to confirm an interaction and avoid false detection. For example, after the piezoelectric sensor can sense an interaction, the capacitive sensor can sense an object approaching the sensing region 102, after which and / or simultaneously the piezoresistive sensor senses the interaction. In these and other embodiments, having the capacitive sensor, piezoresistive sensor, and piezoelectric sensor sense an interaction over a period of time can confirm that the interaction has occurred. Thus, the integrated sensor stack can reduce false positive interactions that can be sensed by a single sensor or even a combination of two types of sensors.

[0032] Alternatively or additionally, when the piezoelectric material of the piezoelectric sensor is a pyroelectric material, the piezoelectric sensor can be used to measure temperature changes. In these and other embodiments, to measure temperature changes, an association can be made between one or more forces measured by the FSR and / or capacitive sensor and one or more signals generated by the piezoelectric sensor. For example, if one or more signals generated by the piezoelectric sensor change while one or more forces measured by the FSR and / or capacitive sensor do not change, it may indicate a temperature change.

[0033] In some embodiments, the temperature change can be associated with an approaching object, such as a human finger. Thus, the piezoelectric sensor can provide additional information related to the interaction with the sensing device 100.

[0034] In some embodiments, the piezoelectric sensor can detect normal forces as well as in-plane forces, i.e., a finger dragging, rubbing, or pinching on the sensor surface. The FSR or capacitive sensor can detect normal forces. Thus, the measurements performed by all sensors of the sensing device 100 can be used to detect interactions including complex gestures applied to the sensing device 100.

[0035] Alternatively or additionally, the piezoelectric element in the sensing device 101 can also be used as a piezoelectric actuator to generate vibrations based on the interaction with the sensing device 100 to produce different haptic feedbacks. For example, a voltage can be applied across the piezoelectric element to vibrate the piezoelectric element.

[0036] Without departing from the scope of the present disclosure, modifications, additions, or omissions can be made to Figure 1 For example, in some embodiments, the sensing area 102 can be of any shape or configuration. For example, the sensing area 102 can be square, rectangular, hexagonal, annular, or some shape other than the circular shape shown. The sensing area 102 can be non-planar and can have a convex curvature or a concave curvature. As another example, compared to the sensing area 102, the tail 104 can be longer or shorter. Alternatively or additionally, the sensing device 100 can not include the tail 104. In these and other embodiments, the connector pins 106 can protrude from the sensing area 102.

[0037] As another example, the sensing device 100 can include more pins than the three connector pins 106 shown. For example, the sensing device 100 can include four, five, six, or more connector pins. Alternatively or additionally, the sensing device 100 can include fewer pins than the three connector pins 106 shown. For example, when the sensing device 100 includes two sensors, the sensing device 100 can include two connector pins.

[0038] Figure 2Shows an exploded view of a sensing device 200 in accordance with some embodiments of the present disclosure. The sensing device 200 may be an example of the sensing device 100 of Figure 1 . In some embodiments, the sensing device 200 may be configured to include three sensors, such as piezoresistive sensors (such as shunt-mode piezoresistive sensors), piezoelectric sensors, and capacitive sensors. Figure 1 As shown in and

[0039] , the sensing device 200 may include a first substrate 202, a piezoresistive material 204, a spacer 206, a conductive material 208 (which includes a first electrode 208a and a second electrode 208b), a piezoelectric material 210, a conductive material 212, and a second substrate 214. Additionally, the sensing device 200 may include a sensing region 220 and a tail region 222.

[0039] As Figure 2 shown, the sensing device 200 may include a first substrate 202, a piezoresistive material 204, a spacer 206, a conductive material 208 (which includes a first electrode 208a and a second electrode 208b), a piezoelectric material 210, a conductive material 212, and a second substrate 214. Additionally, the sensing device 200 may include a sensing region 220 and a tail region 222.

[0040] As shown, the sensing device 200 may be arranged as an integrated sensor stack where the three sensors are vertically overlapped directly between the first substrate 202 and the second substrate 214. As shown, the sensing device 200 may include five materials located between the first substrate 202 and the second substrate 214. These five materials may be arranged as five layers within the sensing device 200. In these and other embodiments, the five layers may include layers having conductive materials (such as conductive materials 208 and 212). In these and other embodiments, the conductive materials may be materials that conduct electricity. In these and other embodiments, the conductive materials may be conductive elements, such as electrodes. For example, the conductive materials may be formed as the first electrode 208a and the second electrode 208b or the electrodes shown in Figure 5 . Figure 5 as shown.

[0041] In some embodiments, the five layers may further include layers having reactive materials (such as piezoresistive material 204 and piezoelectric material 210). In these and other embodiments, the reactive materials may be materials that respond to changes in pressure, force, or environmental conditions (such as temperature or humidity) and other conditions. For example, the reactive materials may change their electrical properties based on the force applied to the reactive materials. As shown, the reactive layers may be separated by one or more conductive materials.

[0042] In some embodiments, the five layers may further include a layer having a dielectric material (such as spacer 206). In these and other embodiments, the dielectric material may be a non-conductive material. In these and other embodiments, the dielectric material may be located between the reactive materials and / or the conductive materials.

[0043] In some embodiments, two sensors within the sensing device 200 may use a single conductive material in the conductive materials as an electrode. Thus, the electrode of the first sensor may be used as the electrode of the second sensor within the sensing device 200.

[0044] In addition, the materials within the sensing device 200 can be formed by direct contact with each other. For example, the conductive material 212 can be formed by direct contact with the piezoelectric material 210. As another example, the piezoresistive material 204 can be in direct contact with the first substrate 202. For example, the piezoresistive material 204 can be printed on the first substrate 202. Alternatively or additionally, as described, one or more additional materials can be placed between the materials or layers of the sensing device 200. Figure 3 and Figure 4 An alternative arrangement of materials for generating a sensing device including three sensors is provided.

[0045] As Figure 2 shown, the piezoresistive material 204, the spacer 206, and the conductive material 208 can be used as a shunt-mode force-sensitive resistor sensor. In these and other embodiments, unless a force is applied to the sensing region 220, the spacer 206 can maintain a gap between the piezoresistive material 204 and the conductive material 208. When a force is applied to the sensing region 220, the piezoresistive material 204 can contact the conductive material 208. For example, the piezoresistive material 204 can contact a portion of the first electrode 208a and the second electrode 208b. Thus, a resistance can be formed between the first electrode 208a and the second electrode 208b, and the resistance can be determined by a device coupled to the first electrode 208a and the second electrode 208b. Based on the resistance, it can be determined that a force is applied to the sensing region 220.

[0046] In some embodiments, the conductive material 208, the piezoelectric material 210, and the conductive material 212 can be used as a piezoelectric sensor. In these and other embodiments, when a force is applied to the piezoelectric material 210, a voltage can be generated between the conductive material 208 and the conductive material 212. The voltage can be measured by a device coupled to the conductive material 208 and the conductive material 212. Based on the voltage, it can be determined that a force is applied to the sensing region 220. In some embodiments, one or both of the first electrode 208a and the second electrode 208b can be used for the piezoelectric sensor.

[0047] In some embodiments, a voltage can be applied across the conductive material 208 and the conductive material 212. In these and other embodiments, the voltage can cause the piezoelectric material 210 to move, such as vibrate, or emit sound. Thus, the sensing device 200 can provide haptic feedback.

[0048] In some embodiments, the conductive material 208 can be used as a mutual capacitance proximity sensor. In these and other embodiments, when an object that can apply a force to the sensing region 220 approaches the conductive material 208, the object changes the electric field of the conductive material 208 between the first electrode 208a and the second electrode 208b, resulting in a change in the capacitance between the first electrode 208a and the second electrode 208b, which can be determined by a device coupled to the first electrode 208a and the second electrode 208b. Based on the change in capacitance, it can be determined that the object is close to or touching the sensing region 220.

[0049] In some embodiments, the conductive material 212 can be used as a self-capacitance proximity sensor. In these and other embodiments, when an object that applies a force to the sensing region 220 approaches the conductive material 212, the object changes the electric field around the conductive material 212 and thus changes the capacitance between the conductive material 212 and the ground. The change in capacitance can be determined by a device coupled to the conductive material 212 and the ground. Based on the change in capacitance, it can be determined that the object is close to or touching the sensing region 220.

[0050] In some embodiments, the conductive materials 212 and 208 can be used as capacitive force sensing sensors. In these and other embodiments, the first electrode 208a and the second electrode 208b can be connected to a single conductor and form a capacitor with the conductive material 212. When a force is applied to the sensing region 220, due to the deformation of the piezoelectric material 210, the capacitance between the conductive materials 208 and 212 changes corresponding to the applied force, which can be determined by a device coupled to the conductive materials 212 and 208.

[0051] In some embodiments, the first substrate 202 and the second substrate 214 can be dielectric materials and can be formed of a flexible material to allow the force applied to the sensing region 220 to be applied to the piezoresistive material 204 and / or the piezoelectric material 210. For example, the first substrate 202 and the second substrate 214 can be a flexible polymer, such as polyimide, or other flexible dielectric materials.

[0052] In some embodiments, the spacer 206 can be a dielectric material, such as the same or different material as the first substrate 202 and the second substrate 214. The conductive material 208 and the conductive material 212 can be formed of a conductive material such as carbon, copper, silver, nickel, aluminum, or other conductive materials.

[0053] In some embodiments, the piezoresistive material 204 may be printed on the first substrate 202. In these and other embodiments, the conductive material 208 may be printed on the first side of the piezoelectric material 210. In these and other embodiments, the conductive material 208 may be printed with the design as shown, where the first electrode 208a and the second electrode 208b have intertwined arms. In these and other embodiments, the first electrode 208a may be coupled to the first pin of the sensing device 200, and the second electrode 208b may be coupled to the second pin of the sensing device 200.

[0054] Alternatively or additionally, the first electrode 208a and the second electrode 208b may have different designs. In these and other embodiments, based on the design of the conductive material 208, the device coupled to the conductive material 208 may be configured to determine the location of the force applied within the sensing region 220. Alternatively or additionally, based on the design of the conductive material 208, the device coupled to the conductive material 208 may be configured to determine the movement of the force moving across the surface of the sensing region 220, such as a swiping motion across the surface of the sensing region 220. Thus, the device may be configured to determine the difference between presses at multiple different locations and swiping motions at multiple different locations from the piezoresistive sensor. As an example, U.S. Patent No. 6,239,790, issued on May 29, 2001, and U.S. Patent No. 6,909,354, issued on June 21, 2005, describe various configurations of piezoresistive sensors and are hereby incorporated by reference in their entirety.

[0055] In some embodiments, the spacer 206 may be a dielectric adhesive that may be applied to couple the first substrate 202 and the first side of the piezoelectric material 210. Alternatively or additionally, the spacer 206 may be a separate material coupled to the first substrate 202 and the piezoelectric material 210 using an adhesive.

[0056] In these and other embodiments, the conductive material 212 may be printed on the second side of the piezoelectric material 210 opposite the first side. In these and other embodiments, an adhesive may be used to couple the piezoelectric material 210 and the second substrate 214. Alternatively or additionally, the conductive material 212 may be a conductive adhesive that may be used to couple the piezoelectric material 210 and the second substrate 214. In some embodiments, the conductive material 212 may be coupled to a pin of the sensing device 200. In these and other embodiments, the sensing device 200 may include three pins.

[0057] In these and other embodiments, the conductive material 212 can be deposited on the second substrate 214 and then coupled to the piezoelectric material 210 using a conductive adhesive. In these and other embodiments, the conductive material 212 and the second substrate 214 can be part of a flexible printed circuit (FPC) or a printed circuit board (PCB).

[0058] Modifications, additions, or omissions may be made without departing from the scope of the present disclosure. For example, in some embodiments, the sensing device 200 can include fewer materials, layers, and / or components. For example, when the sensing device 200 includes a piezoresistive sensor and a capacitive sensor, the sensing device 200 may not include the piezoelectric material 210 and the conductive material 212. In these and other embodiments, the conductive material 208 can be used for the capacitive sensor. Alternatively or additionally, the conductive material 208 can have a different configuration or design. For example, the conductive material 208 can have a design similar to that of U.S. Patent Nos. 6,239,790 and 6,909,354, which are incorporated herein by reference. Alternatively or additionally, the conductive material 208 can have a design similar to the design shown in Figure 2 or some other design. Figure 5

[0059] Alternatively or additionally, the conductive material 212 and the second substrate 214 can be part of a flexible printed circuit (FPC) or a printed circuit board (PCB). Alternatively or additionally, the first substrate 202 can be part of a flexible printed circuit (FPC) or a printed circuit board (PCB).

[0060] Figure 3 An exploded view of a sensing device 300 in accordance with some embodiments of the present disclosure is shown. As Figure 3 shown, the sensing device 300 can include a first substrate 302, a conductive material 308, a spacer 306, a piezoresistive material 304, a conductive material 312a, a piezoelectric material 310, a conductive material 312b, and a second substrate 314. Additionally, the sensing device 300 can include a sensing region 320 and a tail region 322.

[0061] ​As shown, the sensing device 300 can be arranged as an integrated sensor stack, where three sensors are vertically overlapped directly between a first substrate 302 and a second substrate 314. As shown, the sensing device 300 can include six materials located between the first substrate 302 and the second substrate 314. These six materials can be arranged as six layers within the sensing device 300. In these and other embodiments, the six layers can include layers having conductive materials (such as conductive materials 308 and 312). In some embodiments, the six layers can further include layers having reactive materials (such as piezoresistive materials 304 and piezoelectric materials 310). In some embodiments, the six layers can further include layers having dielectric materials (such as spacer 306).

[0062] In some embodiments, two sensors within the sensing device 300 can use a single conductive material in the conductive materials as an electrode. Thus, the electrode of the first sensor can be used as the electrode of the second sensor within the sensing device 300. Additionally, the materials within the sensing device 300 can be formed in direct contact with each other.

[0063] In some embodiments, the piezoresistive material 304, the spacer 306, and the conductive material 308 can be used as a shunt-mode force-sensitive resistor sensor. In these and other embodiments, unless a force is applied to the sensing region 320, the spacer 306 can maintain the gap between the piezoresistive material 304 and the conductive material 308. In these and other embodiments, the conductive material 312a can be directly deposited on the piezoelectric material 310, and then the piezoresistive material 304 can be directly deposited on the conductive material 312a. Alternatively or additionally, the piezoresistive material 304 can be deposited on another carrier, and the other carrier is deposited on the conductive material 312a. In these and other embodiments, the conductive material 308 can be deposited on the first substrate 302. Alternatively or additionally, the conductive material 308 and the first substrate 302 can be part of a flexible printed circuit (FPC) or a printed circuit board (PCB). In these and other embodiments, the conductive material 312b can be deposited on the second substrate 314 and then coupled to the piezoelectric material 310 using a conductive adhesive. In these and other embodiments, the conductive material 312b and the second substrate 314 can be part of a flexible printed circuit (FPC) or a printed circuit board (PCB).

[0064] In some embodiments, the conductive material 312a, the piezoelectric material 310, and the conductive material 312b can be used as a piezoelectric sensor. In some embodiments, the conductive material 308 can be used as a mutual capacitance proximity sensor. In some embodiments, the conductive material 312a or the conductive material 312b can be used as a self-capacitance proximity sensor. Alternatively or additionally, the conductive material 312a and the conductive material 312b can be used as a capacitive force sensing sensor.

[0065] Modifications, additions, or omissions may be made without departing from the scope of the present disclosure. For example, in some embodiments, the sensing device 300 may include fewer materials, layers, and / or elements. For example, when the sensing device 300 includes a piezoresistive sensor and a capacitive sensor, the sensing device 300 may not include the piezoelectric material 310 and the conductive material 312b. Alternatively or additionally, the conductive material 308 may have a different configuration or design. For example, the conductive material 208 may have a design similar to that of U.S. Patent Nos. 6,239,790 and 6,909,354, which are incorporated herein by reference. Alternatively or additionally, the conductive material 208 may have a design similar to Figure 3 the design shown in Figure 5 or some other design.

[0066] Figure 4 An exploded view of a sensing device 400 in accordance with some embodiments of the present disclosure is shown. As Figure 4 shown, the sensing device 400 may include a first substrate 402, a piezoresistive material including a first piezoresistive material 404a and a second piezoresistive material 404b, a spacer 406, a conductive element including a first conductive material 408a and a second conductive material 408b, a piezoelectric material 410, a conductive material 412, and a second substrate 414. In addition, the sensing device 400 may include a sensing region 420 and a tail region 422.

[0067] As shown, the sensing device 400 may be arranged as an integrated sensor stack in which three sensors are vertically stacked directly between the first substrate 402 and the second substrate 414. As shown, the sensing device 400 may include seven materials located between the first substrate 402 and the second substrate 414. These seven materials may be arranged as seven layers within the sensing device 400. In these and other embodiments, the seven layers may include layers having conductive materials (such as the conductive materials 408 and 412). In some embodiments, the seven layers may further include layers having reactive materials (such as the piezoresistive materials 404 and the piezoelectric material 410). In some embodiments, the seven layers may further include layers having dielectric materials (such as the spacer 406).

[0068] In some embodiments, two sensors within the sensing device 400 may use a single conductive material in the conductive material as an electrode. Thus, the electrode of the first sensor may be used as the electrode of the second sensor within the sensing device 400. In addition, the materials within the sensing device 400 may be formed in direct contact with each other.

[0069] In some embodiments, the first piezoresistive material 404a and the second piezoresistive material 404b, the spacer 406, and the first material 408a and the second material 408b may form a through-mode piezoresistive sensor. In these and other embodiments, the spacer 406 may maintain a gap between the first piezoresistive material 404a and the second piezoresistive material 404b unless a force is applied to the sensing region 420. When a force is applied to the sensing region 420, the first piezoresistive material 404a and the second piezoresistive material 404b may contact each other. Thus, a resistance may be formed between the first conductive material 408a and the second conductive material 408b, and the resistance may be determined by a device coupled to the first conductive material 408a and the second conductive material 408b. Based on the resistance, it may be determined that a force is applied to the sensing region 420.

[0070] In these and other embodiments, the conductive material 412 may be deposited on the second substrate 414 and then coupled to the piezoelectric material 410 using a conductive adhesive. Alternatively or additionally, the conductive material 412 and the second substrate 414 may be part of a flexible printed circuit (FPC) or a printed circuit board (PCB). In these and other embodiments, the first material 408a may be deposited on the first substrate 402. Alternatively or additionally, the first material 408a and the first substrate 402 may be part of a flexible printed circuit (FPC) or a printed circuit board (PCB).

[0071] In some embodiments, the conductive material 408b, the piezoelectric material 410, and the conductive material 412 may be used as a piezoelectric sensor. In some embodiments, the conductive material 408a, 408b, or 412 may be used as a mutual capacitance proximity sensor. In some embodiments, the conductive material 408a, 408b, or 412 or the conductive material 408a, 408b, or 412 may be used as a self-capacitance proximity sensor. Alternatively or additionally, the conductive material 408b and the conductive material 412 may be used as a capacitive force sensing sensor.

[0072] Modifications, additions, or omissions may be made without departing from the scope of the present disclosure. For example, in some embodiments, the sensing device 400 may include fewer materials, layers, and / or components. For example, when the sensing device 400 includes a piezoresistive sensor and a capacitive sensor, the sensing device 400 may not include the piezoelectric material 410 and the conductive material 412. Alternatively or additionally, the conductive material 408a or 408b may have different configurations or designs as described in the present disclosure. Figure 4 For example, when the sensing device 400 includes a piezoresistive sensor and a capacitive sensor, the sensing device 400 may not include the piezoelectric material 410 and the conductive material 412. Alternatively or additionally, the conductive material 408a or 408b may have different configurations or designs as described in the present disclosure.

[0073] Figure 5Shows a conductive material that can form part of a sensing device according to some embodiments of the present disclosure. The conductive material forming the layer of the sensing device can be divided into at least two regions. For example, the conductive material can include a first region 501a and a second region 501b that are adjacent to each other spatially, and no part of the first region 501a or the second region 501b surrounds each other. Alternatively or additionally, the conductive material can include a first region 502a and a second region 502b that can be divided into at least two regions, where the first region 502a surrounds part or all of the second region 502b. Figure 2 , Figure 3 and / or Figure 4 The configuration of the conductive material in the illustrated embodiments can be different from the illustrated configuration. For example, in some embodiments, the conductive material 212, 312a, 312b, 408a, 408b, or 412 can include a first region and a second region as Figure 5 shown, or can include other configurations. Modifications, additions, or omissions can be made to Figure 5 without departing from the scope of the present disclosure.

[0074] In accordance with common practice, the various features shown in the drawings may not be drawn to scale. The illustrations presented in this disclosure are not meant to be an actual view of any particular device (e.g., apparatus, system, etc.) or method, but merely an idealized representation for describing the various embodiments of the present disclosure. Thus, for clarity, the dimensions of the various features may be arbitrarily enlarged or reduced. Additionally, some of the drawings may be simplified for clarity. Thus, the drawings may not depict all components of a given device (e.g., apparatus) or all operations of a particular method.

[0075] The terms used herein and especially in the appended claims (e.g., the body of the appended claims) are generally intended to be “open” terms (e.g., the term “comprising” should be interpreted as “including but not limited to,” the term “having” should be interpreted as “having at least,” the term “containing” should be interpreted as “containing but not limited to,” etc.).

[0076] Additionally, if an intent to introduce a specific number of claim limitations is intended, such intent will be recited explicitly in the claims, and in the absence of such recitation, no such intent exists. For example, for purposes of illustration, the appended claims below may include the use of introductory phrases “at least one” and “one or more” to introduce claim limitations. However, the use of such phrases should not be construed to imply that the introduction of a claim limitation by the indefinite article “a” or “an” limits any particular claim containing such introduced claim limitation to an embodiment containing only one such limitation, even when the same claim includes an introductory phrase “one or more” or “at least one” as well as an indefinite article such as “a” or “an” (e.g., “a” and / or “an” shall be construed to mean “at least one” or “one or more”); this applies equally to the use of the definite article to introduce a claim limitation.

[0077] Moreover, even if a specific number of introduced claim limitations is recited explicitly, it should be understood that such recitation shall be construed to mean at least the recited number (e.g., a bare recitation of “two limitations” without further modifiers means at least two limitations or two or more limitations). Additionally, in those instances where a convention such as “at least one of A, B, and C, etc.” or “one or more of A, B, and C, etc.” is used, typically such construction is intended to cover A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B, and C together, etc. For example, the use of the term “and / or” is intended to be interpreted in this manner.

[0078] Furthermore, whether in the specification, claims, or drawings, any disjunctive word or phrase presenting two or more alternative terms should be understood to contemplate the possibilities of including one of the terms, any one of the terms, or both terms. For example, the phrase “A or B” should be understood to include the possibilities of “A” or “B” or “A and B”.

[0079] Additionally, the use of terms such as "first," "second," "third," etc. in this document does not necessarily imply a specific order or quantity of elements. Generally, terms such as "first," "second," "third," etc. are used as general identifiers to distinguish different elements. Without indicating that the terms "first," "second," "third," etc. imply a specific order, these terms should not be construed as implying a specific order. Moreover, without indicating that the terms "first," "second," "third," etc. imply a specific quantity of elements, these terms should not be construed as implying a specific quantity of elements. For example, a first widget may be described as having a first side, and a second widget may be described as having a second side. The use of the term "second side" with respect to the second widget may be to distinguish the side of the second widget from the "first side" of the first widget, and does not mean that the second widget has two sides.

[0080] All of the examples and conditional language recited herein are intended for pedagogical purposes to assist the reader in understanding the invention and the concepts contributed by the inventor to further the art, and are to be construed as not being limited to such specifically recited examples and conditions. While the embodiments of the present disclosure have been described in detail, it should be understood that various changes, substitutions, and alterations can be made without departing from the spirit and scope of the present disclosure.

Claims

1. A sensing device, comprising: an integrated sensor stack including a top surface, a bottom surface, and at least two sensors, each of the at least two sensors being a different sensor type, and the sensor types being selected from: a piezoresistive sensor, a piezoelectric sensor, and a capacitive sensor, wherein the at least two sensors are arranged between the top surface and the bottom surface in the integrated sensor stack in a vertically overlapping manner such that a single interaction with the integrated sensor stack can cause each of the at least two sensors to sense the single interaction.

2. The sensing device according to claim 1, wherein the at least two sensors are a piezoresistive sensor and a piezoelectric sensor, or the at least two sensors are a capacitive sensor and a piezoelectric sensor.

3. The sensing device according to claim 1, wherein each of the at least two sensors includes a plurality of conductive elements, and at least one conductive element of one of the sensors is used as a conductive element of the other sensor.

4. The sensing device according to claim 1, wherein the single interaction is a force applied to the top surface of the integrated sensor stack.

5. The sensing device according to claim 1, wherein a first sensor of the at least two sensors includes a first conductive element and a second conductive element, and a second sensor of the at least two sensors uses the first conductive element of the first sensor as a conductive element of the second sensor.

6. The sensing device according to claim 1, wherein the integrated sensor stack includes three sensors, each of the three sensors being a different sensor type among the sensor types, and wherein the three sensors are arranged in an overlapping manner in the integrated sensor stack such that a single interaction with the integrated sensor stack can cause each of the three sensors to sense the single interaction.

7. The sensing device according to claim 6, wherein the integrated sensor stack comprises: a top substrate including the top surface, a bottom substrate including the bottom surface, and five material layers located between the top substrate and the bottom substrate to form the three sensors.

8. The sensing device according to claim 6, further comprising three pins for outputting data from the three sensors.

9. The sensing device according to claim 6, wherein a first sensor of the three sensors includes a first electrode and a second electrode, a second sensor of the three sensors uses the first electrode of the first sensor as an electrode of the second sensor; and a third sensor of the three sensors uses the second electrode of the first sensor as an electrode of the third sensor.

10. A sensing device, comprising: a first sensor of a first sensor type configured to measure force, the first sensor including a first conductive element and a second conductive element; and A second sensor, the second sensor being directly coupled to the first sensor and being a second sensor type different from the first sensor type, the second sensor using the first conductive element of the first sensor as a conductive element of the second sensor.

11. The sensing device according to claim 10, wherein the first sensor is a piezoelectric sensor and the second sensor is a force-sensitive sensor, or the first sensor is a piezoelectric sensor and the second sensor is a capacitive sensor.

12. The sensing device according to claim 10, wherein the first sensor and the second sensor are arranged in a vertically overlapping manner.

13. The sensing device according to claim 10, further comprising a third sensor directly coupled to the first sensor, the third sensor using the second conductive element of the first sensor as a conductive element of the third sensor.

14. A sensing device, comprising: a first sensor of a first type, the first sensor comprising: a first conductive element; a second conductive element; and a reactive material located between the first conductive element and the second conductive element; and a second sensor of a second type different from the first type, the second sensor using the first conductive element as a conductive element of the second sensor.

15. The sensing device according to claim 14, wherein the reactive material is a piezoelectric material or a piezoresistive material.

16. The sensing device according to claim 14, wherein the second sensor is a capacitive sensor, a piezoelectric sensor, or a force-sensitive sensor.

17. The sensing device according to claim 14, wherein the second sensor further comprises a third conductive element and a second reactive material, wherein the second reactive material is located between the third conductive element and the first conductive element.

18. The sensing device according to claim 14, wherein the first sensor and the second sensor are arranged in a vertically overlapping manner.

19. The sensing device according to claim 14, wherein a single interaction with the sensing device can cause each of the first sensor and the second sensor to sense the single interaction.

20. The sensing device according to claim 14, further comprising a third sensor of a third type different from the first type and the second type, the third sensor using the second conductive element as a conductive element of the third sensor.

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