Substrate processing system and transport method

Abstract

The substrate processing system includes: a processing module having a processing chamber, a substrate support, and an elevator; the vacuum conveying module is connected with the processing module and is provided with a conveying robot of a conveying ring; and a control unit. The control unit executes the following steps: (A) a step of raising the plurality of support pins to leave the ring from the support surface of the substrate support unit; (B) after the step (A), acquiring an index regarding the amount of positional displacement of the ring; and (C) a step for determining whether to correct the position of the ring on the basis of the index relating to the amount of positional shift acquired in the step (B).

Description

Technical Field

[0001] The present invention relates to a substrate processing system and a transfer method. Background Art

[0002] In Patent Document 1, a plasma processing apparatus is disclosed which disposes a focusing ring (ring) around a mounting table (substrate support portion) provided inside a processing chamber and performs plasma processing on a substrate mounted on the substrate support portion. When replacing the ring in a substrate processing system having this plasma processing apparatus, a transfer robot takes out the ring from the substrate support portion, cleans the surface for mounting the ring, and performs an operation of mounting the ring on the substrate support portion again.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-010992. Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The present invention provides a technique capable of suppressing interference between a ring and other components when transferring the ring.

[0008] Technical Means for Solving the Problems

[0009] According to one aspect of the present invention, there is provided a substrate processing system including: a processing module having a processing chamber, a substrate support portion that supports a substrate and a ring disposed around the substrate in the processing chamber, and a lifter configured to be able to raise and lower the ring; a vacuum transfer module connected to the processing module and having a transfer robot for transferring the ring; and a control unit that executes the following steps: (A) a step of raising the lifter to separate the ring from the support surface of the substrate support portion; (B) a step of obtaining an index of a position offset amount of the ring after the step (A); and (C) a step of determining whether to correct the position of the ring based on the index of the position offset amount obtained in the step (B).

[0010] Effects of the Invention

[0011] According to one aspect, interference between the ring and other components can be suppressed when transferring the ring. Brief Description of the Drawings

[0012] Figure 1 It is a diagram showing an example of a substrate processing system according to an embodiment.

[0013] Figure 2It is a schematic cross-sectional view showing an example of a plasma processing apparatus.

[0014] Figure 3 It is a magnified view showing Figure 2 a part of

[0015] Figure 4 It is a diagram for explaining the reason for the position shift of the ring when the ring is taken out from the substrate support part.

[0016] Figure 5 (A) of Figure 5 is a diagram showing a first example of an index for detecting the amount of position shift of the inner ring. Figure 5 (B) of

[0017] Figure 6 is a flowchart showing the operation process when the edge ring is sent out.

[0018] Figure 7 is a flowchart showing the process flow of the offset confirmation correction process of the first example of the conveying method.

[0019] Figure 8 (A) of Figure 8 is a first diagram showing the operation of the offset confirmation correction process. Figure 8 is a second diagram showing the operation following Figure 8 (A) of Figure 8 is a third diagram showing the operation following Figure 8 (B) of Figure 8 is a fourth diagram showing the operation following Figure 8 (C) of Figure 8 is a fifth diagram showing the operation following Figure 8 (D) of Figure 8 is a sixth diagram showing the operation following

[0020] Figure 9 is a flowchart showing the process flow of the offset confirmation correction process of the first example of the modified example.

[0021] Figure 10 is a flowchart showing the process flow of the second example of the conveying method.

[0022] Figure 11 It is a schematic cross-sectional view showing another example of a plasma processing apparatus.

[0023] Figure 12 is a flowchart showing the process flow of the third example of the conveying method.

[0024] Figure 13 (A) is the first diagram showing the offset elimination operation. Figure 13 (B) is the second diagram showing the operation Figure 13 subsequent to (A). Figure 13 (C) is the third diagram showing the operation Figure 13 subsequent to (B).

[0025] Figure 14 is a flowchart showing the processing flow of the transportation method for the fourth example.

[0026] Figure 15 is a flowchart showing the processing flow of the transportation method for the fifth example.

[0027] Figure 16 is a flowchart showing the processing flow of the transportation method for the sixth example.

[0028] Figure 17 is a diagram showing an example of photographing an inclined edge ring by a camera.

[0029] Figure 18 is a diagram showing a modified example of the structure for performing a gas leak inspection as an index for the position offset amount of the edge ring.

[0030] Figure 19 is a flowchart showing the operation flow of transporting the modified example of the edge ring.

[0031] Figure 20 (A) is a diagram showing the relationship between the position of the edge ring and the position of the position detection sensor. Figure 20 (B) is a diagram showing the change in the sensor output of the position detection sensor when the edge ring is transported from one position to another. DETAILED DESCRIPTION

[0032] Hereinafter, a mode for implementing the present invention will be described with reference to the accompanying drawings. In each drawing, the same reference numerals are assigned to the same components, and redundant descriptions may be omitted.

[0033] [Substrate Processing System]

[0034] Refer to Figure 1 to describe the substrate processing system PS of the embodiment. Figure 1 is a diagram showing an example of the substrate processing system PS of the embodiment. As Figure 1 shown, the substrate processing system PS is a system capable of performing various processes such as plasma processing on the substrate W. The substrate W can be, for example, a semiconductor wafer.

[0035] The substrate processing system PS includes a vacuum transfer module TM, a plurality of processing modules PM1 to PM7, a ring storage module RSM, a plurality of load interlock modules LL1 to LL3, an atmospheric transfer module LM, load ports LP1 to LP4, an aligner AN, and a control unit CU. The vacuum transfer module TM is also referred to as a transfer module. The processing modules PM1 to PM7 are also referred to as process modules. The ring storage module RSM is also referred to as a ring storage module. The atmospheric transfer module LM is also referred to as a load module.

[0036] The vacuum transfer module TM has a quadrilateral shape when viewed from above. The processing modules PM1 to PM7, the load interlock modules LL1 to LL3, and the ring storage module RSM are connected to the vacuum transfer module TM. The vacuum transfer module TM has a vacuum transfer chamber. The interior of the vacuum transfer chamber is maintained in a vacuum atmosphere. A transfer robot TR1 is provided inside the vacuum transfer chamber (inside the vacuum transfer module TM).

[0037] The transfer robot TR1 is configured to be rotatable, extendable, and liftable. The transfer robot TR1 has an upper fork FK1 and a lower fork FK2. The upper fork FK1 and the lower fork FK2 of the transfer robot TR1 are configured to be able to hold the substrate W and the ring 113 (inner ring 113a and outer ring 113b), respectively. The transfer robot TR1 holds and transfers the substrate W and the ring 113 between the processing modules PM1 to PM7, the load interlock modules LL1 to LL3, and the ring storage module RSM.

[0038] A position detection sensor S1 is provided on the upper fork FK1. A position detection sensor S2 is provided on the lower fork FK2. The position detection sensors S1, S2 detect the positions of the inner ring 113a and the outer ring 113b placed in the processing modules PM1 to PM7. The position detection sensors S1, S2 can also be, for example, optical displacement sensors, cameras, etc.

[0039] Position detection sensors S11 and S12 can also be provided in the vacuum transfer module TM. The position detection sensors S11 and S12 are provided on the transfer path of the substrate W and the ring 113 (inner ring 113a) transferred from the vacuum transfer module TM to the processing module PM1. The position detection sensors S11 and S12 are used when feeding the substrate W or the ring 113 from the vacuum transfer module TM into the processing module PM1 and when sending out the substrate W or the ring 113 from the processing module PM1 to the vacuum transfer module TM. The position detection sensors S11 and S12 are provided, for example, near a gate (not shown) that separates the vacuum transfer module TM from the processing module PM1. The position detection sensors S11 and S12 are configured such that the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the inner ring 113a. In the vacuum transfer module TM, position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, and S72 can also be provided in the same manner as the position detection sensors S11 and S12.

[0040] The processing modules PM1 to PM7 are connected to the vacuum transfer module TM. The processing modules PM1 to PM7 have vacuum processing chambers. Inside the vacuum processing chambers, a substrate support portion 11 (see Figure 2 ) is provided. After the substrate W is placed on the substrate support portion 11, the processing modules PM1 to PM7 decompress the inside to introduce a processing gas, apply RF electric power to generate plasma, and perform plasma processing on the substrate W using the plasma. The vacuum transfer module TM and the processing modules PM1 to PM7 are separated by an openable and closable gate (not shown).

[0041] The ring storage module RSM is an example of a device for storing the ring 113 and is connected to the vacuum transfer module TM. The ring storage module RSM stores, for example, the inner ring 113a and the outer ring 113b that constitute the ring 113. The ring storage module RSM can also be configured to store only the inner ring 113a. The ring storage module RSM can also be configured to store only the outer ring 113b. The inner ring 113a and the outer ring 113b are transferred between the processing modules PM1 to PM7 and the ring storage module RSM by the transfer robot TR1. The vacuum transfer module TM and the ring storage module RSM are separated by an openable and closable gate (not shown).

[0042] The load interlock modules LL1 to LL3 are provided between the vacuum transfer module TM and the atmospheric transfer module LM. The load interlock modules LL1 to LL3 are connected to the vacuum transfer module TM and the atmospheric transfer module LM. The load interlock modules LL1 to LL3 have an internal pressure variable chamber capable of switching between vacuum and atmospheric pressure inside. A worktable (not shown) on which the substrate W can be placed is provided in the pressure variable chamber. When transporting the substrate W from the atmospheric transfer module LM to the vacuum transfer module TM, the load interlock modules LL1 to LL3 maintain the pressure variable chamber at atmospheric pressure to receive the substrate W from the atmospheric transfer module LM, and then decompress the pressure variable chamber to transfer the substrate W to the vacuum transfer module TM. When transporting the substrate W from the vacuum transfer module TM to the atmospheric transfer module LM, the load interlock modules LL1 to LL3 maintain the pressure variable chamber at vacuum to receive the substrate W from the vacuum transfer module TM, and then increase the pressure of the pressure variable chamber to atmospheric pressure to transfer the substrate W to the atmospheric transfer module LM. The load interlock modules LL1 to LL3 and the vacuum transfer module TM are separated by an openable and closable gate (not shown). The load interlock modules LL1 to LL3 and the atmospheric transfer module LM are separated by an openable and closable gate (not shown).

[0043] The atmospheric transfer module LM is provided opposite to the vacuum transfer module TM. The atmospheric transfer module LM can be, for example, an EFEM (Equipment Front End Module). The atmospheric transfer module LM has a quadrilateral shape when viewed from above. The atmospheric transfer module LM has an atmospheric transfer chamber. The inside of the atmospheric transfer chamber is maintained at an atmospheric pressure atmosphere. A transfer robot TR2 is provided inside the atmospheric transfer chamber. The transfer robot TR2 holds and transports the substrate W between the load ports LP1 to LP4, the aligner AN, and the load interlock modules LL1 to LL3. The atmospheric transfer module LM may also have an FFU (Fan Filter Unit).

[0044] The load ports LP1 to LP4 are connected to the atmospheric transfer module LM. A plurality of substrate storage containers CS1 are placed on the load ports LP1 to LP4. The substrate storage container CS1 can be, for example, a FOUP (Front-Opening Unified Pod) that stores a plurality of (for example, 25) substrates W.

[0045] The aligner AN is connected to the atmospheric transfer module LM. The aligner AN is configured to be able to adjust the position of the substrate W. The aligner AN may also be provided inside the atmospheric transfer chamber.

[0046] The control unit CU controls each part of the substrate processing system PS. For example, the control unit CU controls the operation of the transfer robot TR1 provided in the vacuum transfer module TM, the operation of the transfer robot TR2 provided in the atmospheric transfer module LM, and the opening and closing of the gate. The control unit CU can be, for example, a computer. The control unit CU includes a CPU (Central Processing Unit: central processing unit) as a processor, a RAM (Random Access Memory: random access memory), a ROM (Read Only Memory: read only memory), an auxiliary storage device, and the like. The CPU operates based on a program stored in the ROM or the auxiliary storage device and controls each part of the substrate processing system PS.

[0047] [Plasma processing apparatus]

[0048] Refer to Figure 2 and Figure 3 , and an example of the plasma processing apparatus 1 applied to the Figure 1 processing modules PM1 to PM7 will be described. Figure 2 is a schematic cross-sectional view showing an example of the plasma processing apparatus 1. Figure 3 is a diagram for magnifying and showing Figure 2 a part of

[0049] The plasma processing apparatus 1 includes a plasma processing chamber 10 (processing chamber), a gas supply unit 20, an RF electric power supply unit 30, an exhaust system 40, a lift 50, and a control unit 90.

[0050] The plasma processing chamber 10 includes a substrate support portion 11 and an upper electrode 12. The substrate support portion 11 is disposed in the lower region of the plasma processing space 10s within the plasma processing chamber 10. The upper electrode 12 is disposed above the substrate support portion 11 and functions as a part of the top plate of the plasma processing chamber 10.

[0051] The substrate support portion 11 supports the substrate W in the plasma processing space 10s. The substrate support portion 11 includes a lower electrode 111, an electrostatic chuck 112, a ring 113 (hereinafter also referred to as the ring assembly 113), and an insulating member 115.

[0052] The electrostatic chuck 112 is disposed on the lower electrode 111. The electrostatic chuck 112 has an upper surface including a substrate support surface 112a and a ring support surface 112b. The electrostatic chuck 112 supports the substrate W using the substrate support surface 112a. The electrostatic chuck 112 supports the inner ring 113a using the ring support surface 112b. The electrostatic chuck 112 has an insulating member 112c, a first adsorption electrode 112d, and a second adsorption electrode 112e. The first adsorption electrode 112d and the second adsorption electrode 112e are buried in the insulating member 112c. The first adsorption electrode 112d is located below the substrate support surface 112a. The electrostatic chuck 112 adsorbs and holds the substrate W on the substrate support surface 112a by applying a voltage to the first adsorption electrode 112d. The second adsorption electrode 112e is located below the ring support surface 112b. The electrostatic chuck 112 adsorbs and holds the inner ring 113a above the ring support surface 112b by applying a voltage to the second adsorption electrode 112e. In Figure 2 and Figure 3 In the example of, the electrostatic chuck 112 includes a unipolar electrostatic chuck that adsorbs and holds the substrate W and a bipolar electrostatic chuck that adsorbs and holds the inner ring 113a. However, a bipolar electrostatic chuck may be used instead of the unipolar electrostatic chuck, or a unipolar electrostatic chuck may be used instead of the bipolar electrostatic chuck.

[0053] The ring assembly 113 includes an inner ring 113a and an outer ring 113b. The inner ring 113a has a circular shape. The inner ring 113a is placed on the ring support surface 112b so as to surround the substrate W. The inner ring 113a improves the uniformity of the plasma treatment performed on the substrate W. The inner ring 113a is formed of a conductive material such as silicon (Si) or silicon carbide (SiC), for example. In addition, the inner ring 113a may be formed of an insulating material such as quartz. The outer ring 113b has a circular shape. The outer ring 113b is disposed on the outer peripheral portion of the inner ring 113a. The outer ring 113b protects the upper surface of the insulating member 115 from plasma, for example. The outer ring 113b is formed of an insulating material such as quartz, for example. In addition, the outer ring 113b may be formed of a conductive material such as silicon or silicon carbide. In the illustrated example, the inner peripheral portion of the outer ring 113b is closer to the inside than the outer peripheral portion of the inner ring 113a, the outer peripheral portion of the inner ring 113a is closer to the outside than the inner peripheral portion of the outer ring 113b, and the inner ring 113a and the outer ring 113b partially overlap when viewed from above. Thus, when the plurality of support pins 521 described later are lifted and lowered, the outer ring 113b and the inner ring 113a are lifted and lowered. The insulating member 115 is disposed so as to surround the lower electrode 111. The insulating member 115 is fixed to the bottom of the plasma processing chamber 10 and supports the lower electrode 111.

[0054] The upper electrode 12 and the insulating member 13 together form the plasma processing chamber 10. The upper electrode 12 supplies one or more processing gases from the gas supply unit 20 to the plasma processing space 10s. The upper electrode 12 includes a top plate 121 and a support body 122. The lower surface of the top plate 121 defines the plasma processing space 10s. A plurality of gas inlets 121a are provided in the top plate 121. The plurality of gas inlets 121a penetrate through the top plate 121 in the plate thickness direction (vertical direction) thereof. The support body 122 detachably supports the top plate 121. A gas diffusion chamber 122a is provided inside the support body 122. A plurality of gas inlets 122b extend downward from the gas diffusion chamber 122a. The plurality of gas inlets 122b are respectively communicated with the plurality of gas inlets 121a. A gas supply port 122c is provided in the support body 122. The upper electrode 12 supplies one or two or more processing gases from the gas supply port 122c to the plasma processing space 10s via the gas diffusion chamber 122a, the plurality of gas inlets 122b, and the plurality of gas inlets 121a.

[0055] An inlet / outlet port 10p is provided in the side wall of the plasma processing chamber 10. The substrate W is transported between the plasma processing space 10s and the outside of the plasma processing chamber 10 via the inlet / outlet port 10p. The inlet / outlet port 10p is opened and closed by a gate.

[0056] The gas supply unit 20 includes one or more gas sources 21 and one or more flow controllers 22. The gas supply unit 20 supplies one or more processing gases from the respective gas sources 21 to the gas supply port 122c via the respective flow controllers 22. The flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. The gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsing the flow rate of one or more processing gases.

[0057] The RF electric power supply unit 30 includes two RF power supplies (a first RF power supply 31a and a second RF power supply 31b) and two matching units (a first matching unit 32a and a second matching unit 32b). The first RF power supply 31a supplies a first RF electric power to the lower electrode 111 via the first matching unit 32a. The frequency of the first RF electric power may be, for example, 13 MHz to 150 MHz. The second RF power supply 31b supplies a second RF electric power to the lower electrode 111 via the second matching unit 32b. The frequency of the second RF electric power may be, for example, 400 kHz to 13.56 MHz. A DC power supply may be used instead of the second RF power supply 31b.

[0058] The exhaust system 40 is connected, for example, to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure regulating valve is used to adjust the pressure within the plasma processing space 10s. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0059] The elevator 50 includes a first elevator 51 and a second elevator 52.

[0060] The first elevator 51 includes a plurality of support pins 511 and an actuator 512. The plurality of support pins 511 are inserted through through-holes H1 formed in the lower electrode 111 and the electrostatic chuck 112, and can protrude from and retract into the upper surface of the electrostatic chuck 112. The plurality of support pins 511 protrude from the upper surface of the electrostatic chuck 112, and thereby bring the upper ends into contact with the lower surface of the substrate W to support the substrate W. The actuator 512 raises and lowers the plurality of support pins 511. As the actuator 512, for example, a motor such as a DC motor, a stepping motor, or a linear motor, a pneumatic drive mechanism such as a cylinder, or a piezoelectric actuator can be used. The first elevator 51 raises and lowers the plurality of support pins 511, for example, when the substrate W is transferred between the transfer robot TR1 and the substrate support portion 11.

[0061] The second elevator 52 includes a plurality of support pins 521 and an actuator 522. The support pin 521 is a stepped support pin formed of a cylindrical (solid rod-shaped) member. The support pin 521 has a lower pin 523 and an upper pin 524. The upper pin 524 is provided above the lower pin 523. The outer diameter of the lower pin 523 is larger than the outer diameter of the upper pin 524. Thus, a stepped portion is formed by the upper end surface 523a of the lower pin 523. The lower pin 523 and the upper pin 524 are integrally formed, for example.

[0062] The support pin 521 is inserted through a through-hole H11 formed in the lower electrode 111, a through-hole H12 formed in the insulating member 115, and a through-hole H13 formed in the outer ring 113b, and can protrude from and retract into the upper surfaces of the insulating member 115 and the outer ring 113b. The inner diameters of the through-holes H11 and H12 are slightly larger than the outer diameter of the lower pin 523. The inner diameter of the through-hole H13 is slightly larger than the outer diameter of the upper pin 524 and smaller than the outer diameter of the lower pin 523.

[0063] The support pin 521 can be displaced between a standby position, a first support position, and a second support position.

[0064] The standby position is a position where the upper end surface 524a of the upper pin 524 is located below the lower surface of the inner ring 113a. When the support pin 521 is in the standby position, the inner ring 113a and the outer ring 113b are not lifted by the support pin 521, but are respectively supported on the electrostatic chuck 112 and the insulating member 115.

[0065] The first support position is a position above the standby position. The first support position is a position where the upper end surface 524a of the upper pin 524 protrudes upward from the upper surface of the outer ring 113b and the upper end surface 523a of the lower pin 523 is below the lower surface of the outer ring 113b. By moving to the first support position, the support pin 521 causes the upper end surface 524a of the upper pin 524 to abut against the recess formed in the lower surface of the inner ring 113a to support the inner ring 113a.

[0066] The second support position is a position above the first support position. The second support position is a position where the upper end surface 523a of the lower pin 523 protrudes upward from the upper surface of the insulating member 115. By moving to the second support position, the support pin 521 causes the upper end surface 524a of the upper pin 524 to abut against the recess to support the inner ring 113a, and causes the upper end surface 523a of the lower pin 523 to abut against the lower surface of the outer ring 113b to support the outer ring 113b.

[0067] The actuator 522 raises and lowers the plurality of support pins 521. The actuator 522 can be configured in the same manner as the actuator 512.

[0068] When the second elevator 52 transfers the inner ring 113a between the transfer robot TR1 and the substrate support portion 11, the second elevator 52 moves the plurality of support pins 521 to the first support position, thereby lifting the inner ring 113a. When the second elevator 52 transfers the inner ring 113a and the outer ring 113b between the transfer robot TR1 and the substrate support portion 11, the second elevator 52 moves the plurality of support pins 521 to the second support position, thereby lifting the inner ring 113a and the outer ring 113b. Alternatively, even when transferring the outer ring 113b between the transfer robot TR1 and the substrate support portion 11 in a state where the inner ring 113a is absent, the second elevator 52 moves the plurality of support pins 521 to the second support position, thereby lifting the outer ring 113b.

[0069] The control unit 90 controls each part of the plasma processing apparatus 1. The control unit 90 includes, for example, a computer 91. The computer 91 includes, for example, a CPU 911 as a processor, a storage unit 912, and a communication interface 913. The CPU 911 is configured to be able to perform various control operations based on the programs stored in the storage unit 912. The storage unit 912 includes at least one memory type selected from the group consisting of auxiliary storage devices such as RAM, ROM, HDD (Hard Disk Drive), and SSD (Solid State Drive). The communication interface 913 can also communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network). The control unit 90 can be provided separately from the control unit CU or can be included in the control unit CU.

[0070] [Position offset of the ring]

[0071] Next, with reference to Figure 4 , the reason for the position offset of the ring 113 when the ring 113 is taken out from the substrate support portion 11 will be described.

[0072] The processing modules PM1 to PM7 (for example, Figure 2 the plasma processing apparatus 1) electrostatically adsorb and fix the substrate W on the electrostatic chuck 112 when processing the substrate W. In addition, the plasma processing apparatus 1 electrostatically adsorbs and fixes the ring 113 (inner ring 113a) using the electrostatic chuck 112 around the substrate W.

[0073] The plasma processing apparatus 1 reduces the charge in the electrostatic chuck 112 through a charge removal process (gas charge removal, plasma charge removal, etc.) after plasma processing. In addition, the electrostatic force between the substrate support surface 112a and the ring support surface 112b can be reduced by applying a DC voltage of a different polarity to the electrostatic chuck 112 of the substrate support portion 11 than during plasma processing.

[0074] However, even after performing the above charge removal process, some charges sometimes remain on the substrate support surface 112a and the ring support surface 112b. Therefore, after the charge removal process, some adsorption of the inner ring 113a to the ring support surface 112b (hereinafter, also referred to as residual adsorption) also occurs. When the respective support pins 521 are raised to replace the inner ring 113a and the inner ring 113a is separated from the ring support surface 112b, the inner ring 113a vibrates due to the residual adsorption of the inner ring 113a, and thus is placed on the respective support pins 521 in a state offset from the normal position of the inner ring 113a. As a result, a phenomenon occurs in which the position of the inner ring 113a is placed offset from the original holding portion (the respective support pins 521) held by the transfer robot TR1.

[0075] For example, as shown in the upper right figure of Figure 4 , the inner ring 113a is sometimes offset in the horizontal direction (lateral direction). Thus, when the inner ring 113a is handed over to the transfer robot TR1, the transfer robot TR1 holds the inner ring 113a in the offset position. When the offset inner ring 113a is being transferred by the transfer robot TR1, there may be problems such as interference with other parts and breakage.

[0076] In addition, for example, as shown in the lower right figure of Figure 4 , due to residual adsorption, the inner ring 113a has a large position offset, and there is also a possibility that the inner ring 113a detaches from a part of the support pins 521 among the support pins 521 and becomes tilted. In this case, when the transfer robot TR1 that slides horizontally above the substrate support portion 11 collides with the inner ring 113a, sometimes the transfer robot TR1 or the inner ring 113a is damaged. That is, in the substrate processing system PS, it is required to suppress the position offset of the inner ring 113a and perform feeding or discharging through the transfer robot TR1. However, in the conventional substrate processing system, when taking out the inner ring (edge ring) from the substrate support portion, the transfer robot does not recognize whether the inner ring is held in the normal position.

[0077] The control unit CU of the substrate processing system PS of the present embodiment obtains an index of the position offset amount of the inner ring 113a when discharging the inner ring 113a. And, when the inner ring 113a is positionally offset, correction is performed to eliminate the position offset. Next, referring to Figure 5 of (A) to Figure 5 of (C), the structure for obtaining an index of the position offset amount of the inner ring 113a will be described.

[0078] Figure 5 of (A) is a diagram showing a first example of detecting an index of the position offset amount of the inner ring 113a. The substrate processing system PS uses the detection result of the position of the inner ring 113a performed by the position detection sensor S1 provided on the upper fork FK1 (or the position detection sensor S2 provided on the lower fork FK2) as an index of the position offset amount. The position detection sensors S1 and S2 may also be provided on the lower surface of the upper fork FK1 or the lower fork FK2 opposite to the substrate support portion 11 (the surface opposite to the surface holding the substrate W). In addition, a plurality of position detection sensors S1 may be provided on the upper fork FK1 or the lower fork FK2. For example, position detection sensors S1 may be provided at the bifurcated portions of the upper fork FK1 respectively. Furthermore, the installation position of the position detection sensor S1 or S2 is not limited to the lower surface opposite to the substrate support portion 11 (the surface opposite to the surface holding the substrate W), and may also be provided on the side surface of the upper fork FK1 or the lower fork FK2.

[0079] The position detection sensors S1 and S2 can be, for example, optical detectors (e.g., displacement sensors) that can detect changes in the shape of the object. As the upper fork FK1 or the lower fork FK2 moves horizontally, the position detection sensors S1 or S2 detect the height difference between the substrate support surface 112a and the ring support surface 112b, and detect the edge of the substrate support surface 112a ( Figure 5 the arrow on the left side of (A) of S1). In addition, the upper surface of the inner ring 113a has an inner portion 113a1 that is lower than the substrate support surface 112a on the radially inner side, and an outer portion 113a2 that is higher than the inner portion 113a1 on the radially outer side of the inner portion 113a1. As the upper fork FK1 or the lower fork FK2 moves horizontally, the position detection sensors S1 or S2 detect the step difference between the inner portion 113a1 and the outer portion 113a2, and detect the edge of the inner ring 113a ( Figure 5 the arrow on the right side of (A) of S1). The control unit CU can obtain the interval between the substrate support surface 112a and the inner ring 113a based on the horizontal positions (X coordinates, Y coordinates) of the edge of the substrate support surface 112a and the horizontal positions (X coordinates, Y coordinates) of the edge of the inner ring 113a. The interval is the horizontal dimension of the interval between the side wall between the substrate support surface 112a and the ring support surface 112b and the inner peripheral surface of the inner portion 113a1 of the inner ring 113a. For example, the interval is calculated by values decomposed into the amount in the X-axis direction and the amount in the Y-axis direction.

[0080] The interval is predefined according to the outer diameter of the substrate support surface 112a and the inner diameter of the inner ring 113a. When there is a portion in the annular interval where the absolute value of the interval is greater than the specified value, the position offset of the inner ring 113a is large. Thus, the control unit CU can accurately calculate the position offset of the inner ring 113a based on the detection results of the position detection sensors S1 or S2 (an example of an index regarding the position offset).

[0081] Figure 5 Figure (B) shows a second example of an index for detecting the position offset of the inner ring 113a. The substrate processing system PS can also perform a leak check of the gas between the ring support surface 112b and the inner ring 113a as an index regarding the position offset.

[0082] That is, a gas supply port 61a is formed in the annular support surface 112b at the peripheral portion of the electrostatic chuck 112. The gas supply port 61a supplies gas to the gap between the back surface of the inner ring 113a placed on the annular support surface 112b and the annular support surface 112b. The gas can be the same as the heat transfer gas supplied to the lower surface of the inner ring 113a during plasma processing. As an example of such gas, He gas can be cited. Further, in the gas flow path 61 communicating with the gas supply port 61a, the end portion on the side opposite to the annular support surface 112b is connected to the gas supply section 66 via a pipe 62. The gas supply section 66 may include one or more gas sources 661 and one or more flow controllers 662. In one embodiment, the gas supply section 66 is configured to supply gas from the gas source 661 to the gas supply port 61a via the flow controller 662, for example. Each flow controller 662 may include a mass flow controller or a pressure-controlled flow controller, for example. The gas flow path 61 and the pipe 62 can function as at least a part of the supply path for supplying gas between the annular support surface 112b and the back surface of the inner ring 113a.

[0083] Further, the end portion of the gas flow path 61 on the side opposite to the annular support surface 112b is connected to the exhaust system 64 via a pipe 62. Thereby, it is possible to exhaust the periphery of the annular support surface 112b of the electrostatic chuck 112 via the gas supply port 61a. That is, the gas supply port 61a can function as an exhaust hole for exhausting the periphery of the annular support surface 112b. Thus, in one embodiment, the gas flow path 61 and the pipe 62 can function as at least a part of the exhaust path for exhausting the space between the annular support surface 112b and the back surface of the inner ring 113a.

[0084] Moreover, a pressure sensor 67 is provided for the electrostatic chuck 112 to measure the pressure in the gap between the inner ring 113a electrostatically adsorbed on the annular support surface 112b and the annular support surface 112b. The pressure sensor 67 is provided in the pipe 62, for example. Further, a switching valve 65 may be provided in the pipe 62 to switch the execution / stop of the gas supply from the gas supply section 66. Similarly, a switching valve 63 may be provided in the pipe 62 to switch the execution / stop of the exhaust of the periphery of the annular support surface 112b by the exhaust system 64.

[0085] During a leak check, the control unit CU of the substrate processing system PS operates the gas inspection mechanism unit 60 and the electrostatic chuck 112 according to the steps described below, for example. First, with no substrate W in the plasma processing chamber 10, the inner ring 113a placed on the ring support surface 112b, and the exhaust being carried out via the gas flow path 61 by the exhaust system 64, the control unit CU applies a voltage to the second adsorption electrode 112e of the electrostatic chuck 112. Thereby, a DC voltage is applied to the second adsorption electrode 112e of the electrostatic chuck 112 (for example, in the case of the bipolar second adsorption electrode 112e, DC voltages with different polarities).

[0086] Next, the control unit CU supplies gas to the gas flow path 61 to keep the pressure of the gas flow path 61 higher than the pressure inside the plasma processing chamber 10. Specifically, the control unit CU sets the switching valve 63 to the closed state to stop the exhaust from the exhaust system 64 via the gas flow path 61. On the other hand, the control unit CU sets the switching valve 65 to the open state and supplies gas through the gas supply unit 66. The gas is supplied to the gap between the back surface of the inner ring 113a and the ring support surface 112b via the pipe 62 and the gas flow path 61. When the pressure in this gap reaches the target pressure (for example, when the measurement result of the pressure sensor 67 reaches the target pressure), the control unit CU sets the switching valve 65 to the closed state to stop the gas supply. The target pressure is, for example, the same as the pressure in the gap during plasma processing.

[0087] After that, the control unit CU measures the pressure of the flow path including the gas flow path 61 using the pressure sensor 67. Specifically, the pressure sensor 67 measures the pressure of the pipe 62 after a predetermined time has elapsed since the gas supply stopped. The measured pressure is approximately the same as the pressure in the gap between the ring support surface 112b and the inner ring 113a. Therefore, the control unit CU can determine the leakage of gas from the gap (an indicator of the position offset amount of the inner ring 113a) based on the pressure of the pressure sensor 67. More specifically, for the determination of gas leakage from the gap, the control unit CU determines whether the measured pressure is less than the pressure threshold. This pressure threshold is set, for example, to 90% - 98% of the target pressure, and this information is stored in advance in the storage unit 912. When the measured pressure is less than the pressure threshold, the control unit CU determines that gas is leaking from the gap between the ring support surface 112b and the inner ring 113a. That is, the inner ring 113a has undergone a position offset.

[0088] Figure 5Figure (C) is a diagram showing a third example of an index for detecting the position offset of the inner ring 113a. The control unit CU acquires the imaging information of the camera CM provided on the upper fork FK1 or the camera CM provided on the lower fork FK2 as an index for the position offset. The camera CM is provided, for example, on the lower surface of the upper fork FK1 or the lower fork FK2 opposite to the substrate support portion 11 instead of the position detection sensors S1 and S2. In addition, the camera CM may be provided on the side surface of the upper fork FK1 or the lower fork FK2.

[0089] In the imaging information, for example, the gap between the edge of the substrate support surface 112a and the edge of the inner ring 113a is included as information on hue and contrast. Therefore, the control unit CU acquires the imaging information (an example of an index for the position offset) captured by the camera CM, and can calculate the interval (position offset) with high accuracy by performing appropriate image processing on the imaging information.

[0090] Return Figure 1 , the control unit CU of the substrate processing system PS determines the necessity of replacing the inner ring 113a based on triggers such as user instructions, the number of substrate processes, the quality of the substrate W, the sensor values of each processing module PM1 to PM7, and the occurrence of errors. When it is determined that replacement is necessary, the control unit CU performs a process of recovering the inner ring 113a of the processing module to be replaced and replacing it with the replacement inner ring 113a stored in the ring storage module RSM. The replacement inner ring 113a can be a new product (unused) or a ring that has been used but has little consumption.

[0091] Then, when the control unit CU sends out the inner ring 113a from the processing module to be replaced, it acquires an index for the position offset of the inner ring 113a in the above-described manner, thereby identifying whether the inner ring 113a is offset. Thus, the substrate processing system PS can correct the offset of the inner ring 113a and avoid breakage of components and the like.

[0092] [Transport Method]

[0093] Figure 6 is a flowchart showing the operation process when sending out the edge ring ER. Next, refer to Figure 6 to describe the operations up to when sending out the edge ring ER. The edge ring ER corresponds to Figures 3 - 5 the inner ring 113a shown. In addition, hereinafter, the case of transporting the inner ring 113a between the processing module PM1 and the ring storage module RSM will be described. In the case where the processing module to be replaced is another processing module PM2 to PM7, the same method as in the case where the processing module to be replaced is the processing module PM1 can also be adopted.

[0094] The operation sequence has steps S1 to S6. Steps S1 to S6 are implemented by controlling each part of the substrate processing system PS through the control unit CU and / or the control unit 90. The control unit CU and the control unit 90 are described separately, but it is also possible that the control unit CU has the function of the control unit 90 to control all processes, or the control unit 90 has the function of the control unit CU to control all processes.

[0095] In step S1, the control unit CU performs plasma processing (substrate processing) on the substrate W in the plasma processing chamber 10 through the plasma processing device 1 constituting the processing module PM1. During plasma processing, the control unit 90 of the plasma processing device 1 adsorbs the substrate W and the edge ring ER by applying a DC voltage to the first adsorption electrode 112d and the second adsorption electrode 112e of the electrostatic chuck 112.

[0096] Then, after plasma processing, the control unit CU sends out the substrate W of the plasma processing device 1 through the transfer robot TR1. At this time, the control unit 90 can take out the substrate W by stopping the application of the DC voltage to the first adsorption electrode 112d (or applying a DC voltage of a different polarity). The control unit 90 raises the substrate W through the first elevator 51 and transfers the substrate W to the transfer robot TR1 entering the plasma processing chamber 10. The transfer robot TR1 sends out the substrate W from the plasma processing device 1 and transports it to the next processing module or the load interlock modules LL1 to LL3.

[0097] In step S2, after sending out the substrate W, the control unit CU controls the plasma processing device 1 to transfer to the idle mode. The idle mode is the mode after plasma processing of the substrate W and is a mode in which plasma processing is not performed. In the idle mode, the control unit CU determines the necessity of replacing the edge ring ER and also determines whether the replacement of the edge ring ER can be carried out. The necessity of replacing the ring 113 can be judged based on the above-mentioned trigger. Regarding whether replacement can be carried out, the control unit CU judges based on the presence or absence of the substrate W of the processing module PM1 to be replaced, the transfer schedule of the transfer robot TR1, etc. In addition, in step S2, the control unit 90 continues to adsorb the inner ring 113a by applying a DC voltage to the second adsorption electrode 112e. In addition, the judgment of replacing the edge ring ER is not limited to the idle mode and can also be carried out at other times such as during plasma processing.

[0098] When it is judged that the inner ring 113a needs to be replaced, the control unit CU performs a discharging process on the inner ring 113a using the plasma processing device 1 in step S3. For example, when gas discharging is performed during the discharging process, the plasma processing device 1 supplies N to the plasma processing chamber 10 through the gas supply unit 20 2an inert gas such as a gas, and discharges the gas in the plasma processing chamber 10 using the exhaust system 40 to control the inside of the plasma processing chamber 10 to a prescribed pressure. In addition, the plasma processing apparatus 1 applies a DC voltage having a polarity different from that during plasma processing to the second adsorption electrode 112e of the electrostatic chuck 112 for a prescribed time and then stops. Then, the plasma processing apparatus 1 stops the pressure control and finishes the gas charge removal.

[0099] Then, in steps S4 to S6, the control unit CU transports the edge ring ER from the processing module PM1 to the ring storage module RSM. First, a case of confirming the state of the edge ring ER and the transport using the position detection sensors S1 or S2 of the transport robot TR1 shown in (A) of Figure 5 will be described (hereinafter, also referred to as the first transport method).

[0100] In step S4, when the control unit CU raises the inner ring 113a from the substrate support portion 11, in the case where an offset of the inner ring 113a is confirmed, an offset confirmation correction process for correcting the offset is performed.

[0101] Figure 7 is a flowchart showing the processing flow of the offset confirmation correction process. Figure 8 of (A) to Figure 8 of (F) are diagrams showing the operation of the offset confirmation correction process. In the offset confirmation correction process, the control unit CU first raises each support pin 521 of the plasma processing apparatus 1, thereby separating the edge ring ER from the ring support surface 112b of the substrate support portion 11 ( Figure 7 step S101 of ). When there is residual adsorption between the ring support surface 112b and the edge ring ER, as shown in Figure 8 of (A), the edge ring ER may be offset during ascent.

[0102] The control unit CU lowers each support pin 521 of the plasma processing apparatus 1 to temporarily place the edge ring ER on the ring support surface 112b of the substrate support portion 11 ( Figure 7 step S102 of ). In the case where the edge ring ER is offset, as shown in Figure 8 of (B), the edge ring ER is arranged offset with respect to the substrate support surface 112a.

[0103] Next, the control unit CU operates the transport robot TR1 and detects the position of the edge ring ER using the position detection sensor S1 or S2 (an example of an index of the position offset amount) ( Figure 7 step S103 of ). For example, as shown in Figure 8As shown in (C), the transport robot TR1 moves horizontally within the plasma processing space for 10 s, and the position detection sensors S1 or S2 are arranged at positions capable of detecting the edge of the substrate support surface 112a and the edge of the edge ring ER. Thereby, the control unit CU receives the detection results of the position detection sensors S1 or S2, and can obtain the interval amount (position offset amount) between the substrate support surface 112a and the edge ring ER.

[0104] Next, the control unit CU compares the threshold value pre-stored with the position offset amount of the edge ring ER, and determines whether the position offset amount of the edge ring ER is equal to or greater than the threshold value (step S104). The threshold value can be set to an appropriate value according to the sizes of the substrate support surface 112a and the edge ring ER. For example, it can be set to a value in the range of about 0.1 mm to 0.4 mm. In the present embodiment, it is set to 0.15 mm.

[0105] When the position offset amount is less than the threshold value (step S104: No), it can be said that the edge ring ER is not offset (or the position offset amount is small enough). Therefore, the control unit CU ends the offset confirmation correction process ( Figure 6 step S4), and transfers to step S5. On the other hand, when the position offset amount is equal to or greater than the threshold value (step S104: Yes), it can be said that the edge ring ER is offset (the position offset amount is large). In this case, the control unit CU detects an error of the edge ring ER and enters Figure 7 step S105.

[0106] In step S105, the control unit CU raises the edge ring ER through the respective support pins 521 of the plasma processing apparatus 1, and makes the transport robot TR1 enter the plasma processing space for 10 s to hand over the edge ring ER. Thereby, as Figure 8 shown in (D), the edge ring ER is held by the transport robot TR1 in an offset state.

[0107] After that, the control unit CU performs a correction movement for correcting the offset of the edge ring ER through the transport robot TR1 holding the edge ring ER ( Figure 7 step S106). In the structure in which the offset of the edge ring ER is detected by the position detection sensors S1 or S2, in the above step S103, the position offset amount of the edge ring ER has already been obtained. Therefore, as Figure 8 shown in (E), the control unit CU sets the movement amount in the correction movement of the transport robot TR1 based on the obtained position offset amount, and makes the transport robot TR1 move horizontally by the movement amount. In Figure 8 the example of (E), the transport robot TR1 is horizontally moved to the right by the movement amount. As a result, the edge ring ER returns to the normal position above the substrate support portion 11.

[0108] The control unit CU receives the edge ring ER from the transfer robot TR1 through each support pin 521, lowers each support pin 521 after the transfer robot TR1 retracts, and places the edge ring ER on the ring support surface 112b again ( Figure 7 step S107). Thus, as shown in (F) of Figure 8 , the edge ring ER is supported by the ring support surface 112b in a state where the position offset is eliminated. When this step S107 ends, the offset confirmation and correction process (step S4) ends. In addition, after receiving the edge ring ER through each support pin 521, the control unit CU may transfer to the delivery process of delivering the edge ring ER from the processing module PM1 without lowering each support pin 521.

[0109] Return Figure 6 , in step S5, the control unit CU performs the delivery process of delivering the edge ring ER from the processing module PM1. Specifically, the control unit CU raises the edge ring ER through each support pin 521 of the plasma processing apparatus 1 and receives the edge ring ER through the transfer robot TR1. After placing the edge ring ER (after step S107), the electrostatic adsorption of the electrostatic chuck 112 is not performed. Therefore, when raising the edge ring ER through each support pin 521, the edge ring ER can be arranged without offset relative to the holding portion of the transfer robot TR1. The transfer robot TR1 receives the edge ring ER without offset, and delivers the edge ring ER from the processing module PM1 after each support pin 521 is lowered. At this time, the transfer robot TR1 can smoothly deliver the edge ring ER without interfering with other components.

[0110] In step S6, the control unit CU performs the feeding process of feeding the edge ring ER to the ring storage module RSM by the transfer robot TR1. By holding the edge ring ER without offset, the transfer robot TR1 can stably transport the edge ring ER into the ring storage module RSM without interfering with other components such as the ring storage module RSM.

[0111] As described above, when the substrate processing system PS and the transfer method deliver the edge ring ER from the processing module PM1, they confirm the offset of the edge ring ER and correct it if an offset occurs, thereby enabling the edge ring ER to be transported without interfering with other components. Thus, it is possible to suppress the edge ring ER from falling from the transfer robot TR1 and damage to the edge ring ER or other components. Therefore, the substrate processing system PS can reduce the situation of stopping the substrate processing system PS for maintenance.

[0112] In addition, the substrate processing system PS and the transfer method are not limited to the above-described embodiments, and various modifications can be adopted. For example, Figure 6The transportation method described above explains the case of only replacing the edge ring ER, but it can also be applied to the case of replacing the cover ring CR (outer ring 113b). When sending out the cover ring CR, stable transportation of the cover ring CR can also be achieved by performing the offset confirmation correction process.

[0113] The substrate support portion 11 of each processing module PM1 to PM7 is not limited to the structure of electrostatically adsorbing the substrate W and the ring 113 using the electrostatic chuck 112. For example, the substrate support portion 11 can adopt a mechanism that applies an attractive force to the substrate W and the ring 113, a mechanism that mechanically engages and fixes the ring 113, etc. In this case, since the ring 113 is in close contact with the ring support surface 112b or other structures, the ring 113 may also shift when each support pin 521 rises. Therefore, the substrate processing system PS can perform transportation while suppressing the shift of the ring 113 by adopting the transportation method of the embodiment.

[0114] Moreover, in the above offset confirmation correction process, after placing the edge ring ER on the ring support surface 112b in step S102, an index of the position offset amount of the edge ring ER is obtained by the position detection sensor S1 or S2 of the transfer robot TR1. However, in the offset confirmation correction process, an index of the position offset amount of the edge ring ER can also be obtained by the position detection sensor S1 or S2 of the transfer robot TR1 in the state where the edge ring ER is supported by each support pin 521 (the rising state).

[0115] For example, as Figure 9As shown, in step S111, the control unit CU raises the edge ring ER by the support pins 521, stops the support pins 521 when leaving the ring support surface 112b, and obtains the position offset through the position detection sensors S1 and S2 in the stopped state of the support pins 521. Alternatively, the control unit CU can also obtain the position offset through the position detection sensors S1 and S2 at any pin height position higher than the position where it leaves the ring support surface 112b and where the upper surface of the edge ring ER is lower than the position detection sensors S1 and S2 of the transfer robot TR1. In the subsequent step S112, the control unit CU detects the position offset of the edge ring ER through the position detection sensor S1 or S2. In step S113, it is determined whether the position offset of the edge ring ER is above the threshold. Then, when the position offset is above the threshold (step S113: Yes), the control unit CU raises the edge ring ER to the transfer height by each support pin 521, and makes the transfer robot TR1 enter the plasma processing space 10s to hand over the edge ring ER (step S114). In step S115, the control unit CU performs a correction movement to correct the offset of the edge ring ER through the transfer robot TR1 holding the edge ring ER. Further, in step S116, the control unit CU receives the edge ring ER from the transfer robot TR1 through each support pin 521, lowers each support pin 521 after the transfer robot TR1 retracts, and places the edge ring ER on the ring support surface 112b again. Thus, the operations of lowering the edge ring ER in step S102 and raising the edge ring ER in step S105 can be omitted, so that the processing can be made more efficient. In addition, in step S115, the control unit CU can also move and correct the transfer robot TR1 considering the position offset of the edge ring ER, receive the edge ring ER and directly send it out. Thus, step S116 can be omitted. Figure 7 In step S102 of, the action of lowering the edge ring ER and in step S105 of raising the edge ring ER, so that the processing can be made more efficient. In addition, in step S115, the control unit CU can also move and correct the transfer robot TR1 considering the position offset of the edge ring ER, receive the edge ring ER and directly send it out. Thus, step S116 can be omitted.

[0116] Also, in the above offset confirmation and correction process, after receiving the edge ring ER by the transfer robot TR1, a correction movement is performed to eliminate the offset of the edge ring ER. However, in the offset confirmation and correction process, it is also possible to Figure 7 Before the transfer robot TR1 receives the edge ring ER held by each support pin 521 in step S105 of, the transfer robot TR1 pre-corrects and moves the position offset in advance, and then hands over the edge ring ER to the transfer robot TR1. Thus, for example, Figure 7 Steps S106 and S107 of can be omitted, and the processing can be made further efficient.

[0117] In addition, the substrate processing system PS can stop at a prescribed height during the period when the edge ring ER is lifted by each support pin 521 in the offset confirmation correction process (step S4) to perform a cleaning process inside the plasma processing chamber 10, can also perform the cleaning process inside the plasma processing chamber 10 after being fixed to the transport height, or can perform the cleaning process inside the plasma processing chamber 10 while lifting the edge ring ER. Alternatively, the cleaning process can stop at a prescribed height during the period when the edge ring ER is lifted by each support pin 521 during the delivery process (step S5) from the processing modules PM1 to PM7 to perform the cleaning process inside the plasma processing chamber 10, can also perform the cleaning process inside the plasma processing chamber 10 after being fixed to the transport height, or can perform the cleaning process inside the plasma processing chamber 10 while lifting the edge ring ER. Such a cleaning process can adopt, for example, wafer-less dry cleaning (WLDC: Wafer-Less Dry Cleaning), or dry cleaning (WWDC: Wafer With Dry Cleaning) performed by placing a dummy wafer having a diameter smaller than that of the substrate W and having the same diameter as the substrate support surface 112a on the substrate support portion 11. In the case of WWDC, a dummy wafer having the same diameter as the substrate support surface 112a is placed on the substrate support portion 11 before the steps of S4 and S5.

[0118] In addition, the substrate processing system PS can perform wafer-less dry cleaning from the substrate processing in step S1 to the static elimination processing in step S3, or can perform dry cleaning by placing a dummy wafer having the same diameter as the substrate W or a dummy wafer having a diameter smaller than that of the substrate W and having the same diameter as the substrate support surface 112a. Further, the substrate processing system PS can perform wafer-less dry cleaning after step S5 and before feeding the replacement ring, or can perform dry cleaning by placing a dummy wafer having the same diameter as the substrate W or a dummy wafer having a diameter smaller than that of the substrate W and having the same diameter as the substrate support surface 112a.

[0119] By performing the cleaning process during the offset confirmation correction process or the delivery process, it is possible to clean the edge ring ER before sending it out to the vacuum transport chamber, and it is possible to suppress the vacuum transport chamber from being contaminated by the deposits attached to the edge ring ER. In addition, by performing the cleaning process at the moment when the edge ring ER is lifted, it is also possible to remove the deposits attached to the ring support surface 112b. Moreover, by the substrate processing system PS performing the cleaning process on the edge ring ER during the sending operation, the productivity of the entire process can be improved compared with the case of performing the cleaning process separately. In addition, by cleaning after sending out the edge ring and before feeding the replacement edge ring to remove the deposits accumulated on the ring placement surface, it is possible to suppress the poor adsorption of the replacement edge ring.

[0120] Figure 10 This is a flowchart showing the transportation method of the second example. The transportation method of the second example also uses the position detection sensors S1 or S2 of the transportation robot TR1 to confirm the state of the edge ring ER and perform transportation. In addition, the description of the transportation method of the second example also details the case of transporting the ring 113 between the ring storage module RSM and the processing module PM1. When the processing module to be replaced is other processing modules PM2 to PM7, the same method as when the processing module to be replaced is the processing module PM1 can also be adopted.

[0121] When the control unit CU of the substrate processing system PS reaches step S3 in Figure 6 the operation process, as the transportation method of the second example, steps S201 to S210 are performed. Steps S201 to S210 are implemented by the control unit CU controlling each part of the substrate processing system PS.

[0122] Steps S201 to S204 can be the same as steps S101 to S104. However, when the position offset of the edge ring ER in step S204 by the control unit CU is equal to or greater than the threshold (step S204: Yes), it proceeds to step S205, and when the position offset of the edge ring ER is less than the threshold (step S204: No), it proceeds to step S208.

[0123] In step S205, the control unit CU raises the edge ring ER by each support pin 521, and after the transportation robot TR1 enters the plasma processing space for 10 s, it lowers each support pin 521, thereby transferring the edge ring ER to the transportation robot TR1. Thus, the edge ring ER is held by the transportation robot TR1 in an offset state.

[0124] After that, the control unit CU performs the ejection process of ejecting the edge ring ER from the processing module PM1 (step S206). By performing the ejection process after step S205, the transportation robot TR1 holds the edge ring ER in an offset state and ejects the edge ring ER from the processing module PM1.

[0125] Then, the control unit CU performs the feeding process of transporting the edge ring ER by the transportation robot TR1 and feeding the edge ring ER into the ring storage module RSM (step S207). In the feeding process, when the control unit CU feeds the edge ring ER into the storage module (such as a box not shown) of the ring storage module RSM, it sets the movement amount of the transportation robot TR1 based on the position offset obtained in step S203 and performs the correction movement. Thus, the edge ring ER returns to the normal position through the transportation robot TR1 without interfering with the ring storage module RSM. Therefore, the control unit CU can smoothly store the edge ring ER without interfering with other components.

[0126] On the other hand, when the position offset is less than the threshold value, it can be said that the edge ring ER is not offset (or the position offset is small enough), so the control unit CU performs normal (without movement correction) transportation in steps S208 to S210.

[0127] Specifically, the control unit CU raises the edge ring ER through each support pin 521 of the plasma processing apparatus 1, and makes the transfer robot TR1 enter the plasma processing space 10s to transfer the edge ring ER (step S208). Then, the control unit CU performs a transfer process of sending out the edge ring ER from the processing module PM1 (step S209). Next, the control unit CU transfers the edge ring ER through the transfer robot TR1 and sends the edge ring ER into the ring storage module RSM (step S210). During the transfer into the ring storage module RSM, the transfer robot TR1 can store the edge ring ER in the storage module without performing movement correction on the edge ring ER. That is, the transfer processes in steps S206 and S209 are equivalent to Figure 6 the transfer process in step S5 of Figure 6 and the transfer processes in steps S207 and S210 are equivalent to

[0128] the transfer process in step S6 of Figure 9 .

[0129] Further, the control unit CU can select the implementation of the transportation method of the first example and the implementation of the transportation method of the second example based on the position offset of the edge ring ER. For example, the control unit CU may also have a selection threshold for the transportation method. When the position offset is equal to or greater than the selection threshold, it is determined as the transportation method of the first example. When the position offset is less than the selection threshold, it is determined as the transportation method of the second example. The selection threshold is a value larger than the threshold for determining movement correction. Thus, when the position offset of the edge ring ER is large, more stable transportation can be achieved by correcting the offset of the edge ring ER within the processing module PM1. On the other hand, when movement correction is required but the position offset of the edge ring ER is small, the transportation efficiency can be improved by correcting the offset of the edge ring ER during transportation to the ring storage module RSM.

[0130] The substrate processing system PS is not limited to a structure in which the rings 113 (edge rings ER) of the processing modules PM1 to PM7 are directly sent into the ring storage module RSM by the transfer robot TR1. For example, when the substrate processing system PS applies Figure 11 the plasma processing apparatus 1A shown, the upper ring 222 of the ring 220 can be transported to the atmospheric transfer module LM. Figure 11 It is a schematic cross-sectional view showing another example of the plasma processing apparatus.

[0131] Figure 11 The difference between the plasma processing apparatus 1A shown and the plasma processing apparatus 1 is that it has a substrate support portion 16 instead of the substrate support portion 11 and a ring assembly 220 (ring 220) instead of the ring assembly 113. Regarding other structures, they can be the same as those of the plasma processing apparatus 1. Hereinafter, the description will focus on the differences from the plasma processing apparatus 1.

[0132] The plasma processing apparatus 1A has a substrate support portion 16. The substrate support portion 16 is provided inside the plasma processing chamber 10. The substrate support portion 16 supports the substrate W. The substrate support portion 16 is supported by a support portion 17. The support portion 17 extends upward from the bottom of the plasma processing chamber 10. The support portion 17 has a cylindrical shape. The support portion 17 is formed of an insulating material such as quartz.

[0133] The substrate support portion 16 has a first region 161 and a second region 162. The first region 161 supports the substrate W. The first region 161 is a region that is substantially circular in plan view. The first region 161 may include a base 18 and an electrostatic chuck 19. The first region 161 may be composed of a part of the base 18 and a part of the electrostatic chuck 19. The base 18 and the electrostatic chuck 19 are provided inside the plasma processing chamber 10. The base 18 is formed of a conductive material such as aluminum. The base 18 has a substantially disc shape. The base 18 constitutes a lower electrode.

[0134] The substrate support portion 16 has a main body portion 2 and a ring assembly 220. The main body portion 2 has a base 18 and an electrostatic chuck 19. The main body portion 2 has: a substrate support region 2a for supporting the substrate W; a ring-shaped region 2b for supporting the ring assembly 220; and a side wall 2c extending in the vertical direction between the substrate support region 2a and the ring-shaped region 2b. The ring-shaped region 2b surrounds the substrate support region 2a. The ring-shaped region 2b is located at a position lower than the substrate support region 2a. Accordingly, the upper end of the side wall 2c is connected to the substrate support region 2a, and the lower end of the side wall 2c is connected to the ring-shaped region 2b.

[0135] A flow path 18f is formed in the base 18. The flow path 18f is a flow path through which a heat exchange medium flows. As the heat exchange medium, a liquid refrigerant or a refrigerant (e.g., Freon) that cools the base 18 by vaporization of the liquid refrigerant is used. The flow path 18f is connected to a supply device of the heat exchange medium (e.g., a cooling unit). The supply device is provided outside the plasma processing chamber 10. The heat exchange medium is supplied from the supply device to the flow path 18f. The heat exchange medium supplied to the flow path 18f returns to the supply device.

[0136] The electrostatic chuck 19 is provided on the base 18. When the substrate W is processed in the plasma processing chamber 10, it is placed on the first region 161 and the electrostatic chuck 19.

[0137] The second region 162 extends radially outward with respect to the first region 161 and surrounds the first region 161. The second region 162 is a region that is substantially annular in a plan view. The ring assembly 220 is placed on the second region 162. The second region 162 may include the base 18. The second region 162 may also include the electrostatic chuck 19. The second region 162 may be constituted by another part of the base 18 and another part of the electrostatic chuck 19. The substrate W is placed within the region surrounded by the ring assembly 220 and on the electrostatic chuck 19. Details of the ring assembly 220 will be described later.

[0138] A through hole 162h is formed in the second region 162. The main body portion 2 has the through hole 162h formed between the ring-shaped region 2b and the lower surface 2d of the main body portion 2. The through hole 162h is formed in the second region 162 so as to extend along the vertical direction. A plurality of through holes 162h are formed in the second region 162. The number of the through holes 162h may be the same as the number of lift pins 72 of a lift mechanism 70 described later. Each through hole 162h is arranged so as to be aligned with the corresponding lift pin 72 in a straight line.

[0139] The electrostatic chuck 19 has a main body 19m and an electrode 19e. The main body 19m is formed of a dielectric such as alumina or aluminum nitride. The main body 19m has a substantially disc shape. The electrode 19e is provided inside the main body 19m. The electrode 19e has a film shape. The electrode 19e is electrically connected to a DC power supply via a switch. When a voltage from the DC power supply is applied to the electrode 19e, an electrostatic attraction force is generated between the electrostatic chuck 19 and the substrate W. By the generated electrostatic attraction force, the substrate W is attracted to the electrostatic chuck 19 and held by the electrostatic chuck 19.

[0140] The plasma processing apparatus 1A further has an outer peripheral member 27. The outer peripheral member 27 extends circumferentially in the radially outer side with respect to the substrate support portion 16 so as to surround the substrate support portion 16. The outer peripheral member 27 may also extend circumferentially in the radially outer side with respect to the support portion 17 so as to surround the support portion 17. The outer peripheral member 27 may be composed of one or more members. The outer peripheral member 27 can be formed of an insulating material such as quartz.

[0141] The ring assembly 220 and the substrate support portion 16 will be described in more detail. The ring assembly 220 includes a lower side ring 221 and an upper side ring 222.

[0142] The lower side ring 221 and the upper side ring 222 each have an annular shape. The lower side ring 221 and the upper side ring 222 are each formed of a material appropriately selected according to the plasma processing performed in the plasma processing apparatus 1A. The lower side ring 221 and the upper side ring 222 are each formed of, for example, silicon or silicon carbide.

[0143] The lower side ring 221 is disposed on the annular region 2b. The lower side ring 221 can be placed on the second region 162 and on the electrostatic chuck 19. The lower side ring 221 may also be placed on a component other than the electrostatic chuck 19 in the second region 162.

[0144] The lower surface of the upper side ring 222 is substantially flat. The lower surface of the upper side ring 222 includes a conical surface that defines a recess. The lower surface of the upper side ring 222 defines a plurality of recesses. The number of conical surfaces and the number of recesses of the upper side ring 222 may be the same as the number of lifting pins 72 of the lifting mechanism 70. Each recess has a size for receiving the tip of the second columnar portion 722 of the corresponding lifting pin 72. The upper side ring 222 is disposed on the lower side ring 221 such that each recess is aligned in a straight line with the corresponding lifting pin 72 and the corresponding through hole 221h.

[0145] The upper ring 222 is received in the recess of the lower ring 221. The lower ring 221 and the upper ring 222 are configured such that when they are disposed on the annular region 2b, the upper surface of the outer portion of the lower ring 221 and the upper surface of the upper ring 222 are at substantially the same height as the upper surface of the substrate W on the substrate support region 2a. The upper ring 222 has an inner peripheral surface 222a that faces the end surface of the substrate W on the substrate support region 2a when the lower ring 221 and the upper ring 222 are disposed on the annular region 2b.

[0146] The substrate support portion 16 has a lifting mechanism 70. The lifting mechanism 70 includes lifting pins 72 and is configured to be able to lift and lower the lower ring 221 and the upper ring 222. The lifting mechanism 70 includes a plurality of lifting pins 72. The number of lifting pins 72 can be any number as long as it can support the ring assembly 220 and lift and lower it. For example, the number of lifting pins 72 can be three.

[0147] Each lifting pin 72 can be formed of an insulating material. Each lifting pin 72 can be formed of, for example, sapphire, alumina, quartz, silicon nitride, aluminum nitride, or resin. Each lifting pin 72 includes a first columnar portion 721 and a second columnar portion 722. The first columnar portion 721 extends in the vertical direction. The first columnar portion 721 has a first upper end surface 721t. The first upper end surface 721t can abut against the lower surface of the lower ring 221.

[0148] The second columnar portion 722 extends in the vertical direction above the first columnar portion 721. The second columnar portion 722 is narrower than the first columnar portion 721 so as to expose the first upper end surface 721t. The first columnar portion 721 and the second columnar portion 722 each have a cylindrical shape. The diameter of the first columnar portion 721 is larger than the diameter of the second columnar portion 722. The second columnar portion 722 can move up and down through the through hole 221h. The length of the second columnar portion 722 in the vertical direction is larger than the thickness of the region of the lower ring 221 where the upper ring 222 is placed in the vertical direction.

[0149] The second columnar portion 722 has a second upper end surface 722t. The second upper end surface 722t can abut against the upper ring 222. The front end of the second columnar portion 722 including the second upper end surface 722t can also be formed in a conical shape to fit into the corresponding recess in the upper ring 222.

[0150] The second columnar portion 722 can also include a first portion 722a and a second portion 722b. The first portion 722a is columnar and extends upward from the first columnar portion 721. The second portion 722b is columnar and extends above the first portion 722a. The second portion 722b includes the second upper end surface 722t. The width of the first portion 722a is larger than the width of the second portion 722b.

[0151] The first columnar portion 721, the first part 722a, and the second part 722b may also each have a cylindrical shape. The diameter of the first columnar portion 721 is greater than the diameter of the first part 722a, and the diameter of the first part 722a is greater than the diameter of the second part 722b.

[0152] The second columnar portion 722 may also include a third part 722c. The third part 722c extends between the first part 722a and the second part 722b. The third part 722c has a conical surface.

[0153] The lifting mechanism 70 includes more than one drive device 74. More than one drive device 74 is configured to be able to lift and lower a plurality of lifting pins 72. Each of more than one drive device 74 can include, for example, an electric motor.

[0154] For example, the upper ring 222 is stored in a ring storage container CS2 placed on the loading port LP4 of the atmospheric transport module LM. The ring storage container CS2 corresponds to the ring storage module. The control unit CU sends the upper rings 222 of the processing modules PM1 to PM7 to the vacuum transport module TM, and transfers the upper rings 222 to any one of the loading interlock modules LL1 to LL3. Then, when the upper rings 222 are sent out from the loading interlock modules LL1 to LL3 by the transport robot TR2 of the atmospheric transport module LM, the control unit CU stores the upper rings 222 in the ring storage container CS2.

[0155] The correction movement when the upper ring 222 is displaced in position can be performed within the processing modules PM1 to PM7, or can be performed when the transport robot TR1 sends the upper ring 222 into and places it on the loading interlock modules LL1 to LL3. Alternatively, the correction movement can be performed when the transport robot TR2 of the atmospheric transport module LM sends the upper ring 222 into the ring storage container CS2. In addition, in the transport method, when transporting the lower ring 221 in addition to the upper ring 222, the same processing as described above can also be performed. In addition, for example, the processing modules PM1 to PM7 of the substrate processing system PS are not limited to the ring assemblies 113 and 220 formed by combining a plurality of components, and may also be a structure using a ring formed by one component. In this case, the transport methods of the above first and second examples can also be applied, and the transport methods of the third to fifth examples described later can also be applied.

[0156] Next, the method of transporting and the method of confirming the state of the edge ring ER by the leak check shown in (B) of Figure 5 will be described. Figure 12It is a flowchart showing the processing flow of the transportation method of the third example. In addition, the description of the transportation method of the third example also details the case of transporting the edge ring 113 between the ring storage module RSM and the processing module PM1. When the processing module to be replaced is other processing modules PM2 to PM7, the same method as when the processing module to be replaced is the processing module PM1 can also be adopted.

[0157] When the control unit CU of the substrate processing system PS reaches step S3 in Figure 6 the operation flow, as the transportation method of the third example, steps S301 to S308 are performed. Steps S301 to S308 are implemented by the control unit CU controlling each part of the substrate processing system PS.

[0158] Steps S301 and S302 can be the same as steps S101 and S102. In addition, after step S302 (before step S303), the control unit CU performs the process of electrostatically adsorbing the edge ring ER to the ring support surface 112b for leak inspection.

[0159] In step S303, the control unit CU performs a leak inspection through the plasma processing device 1 in order to obtain an index of the position offset of the edge ring ER. As shown in Figure 5 (B) of, in the leak inspection, the control unit 90 of the plasma processing device 1 supplies gas to the gap between the electrostatically adsorbed ring support surface 112b and the edge ring ER, and stops the gas supply when the pressure in the gap reaches the target pressure. Then, the control unit 90 measures the pressure of the flow path after a specified time has elapsed since the supply stop through the pressure sensor 67.

[0160] The control unit CU obtains the measurement result of the pressure sensor 67 after a specified time as an index of the position offset of the edge ring ER, and judges the position offset of the edge ring ER ( Figure 12 step S304). For example, when the pressure is equal to or higher than the previously stored pressure threshold, the control unit CU judges that the edge ring ER has not shifted (normal), while when the pressure is less than the pressure threshold, the control unit CU judges that the edge ring ER has shifted (abnormal). Then, when the edge ring ER has not shifted (step S304: yes), it proceeds to step S305, and when the edge ring ER has shifted (step S304: no), it proceeds to step S308.

[0161] In step S305, the control unit CU ends the leak inspection and the offset confirmation correction process. Then, in step S306, the control unit CU performs the sending process of sending out the edge ring ER from the processing module PM1 by the transfer robot TR1. This step S306 corresponds to Figure 6Step S5. Additionally, since the above-mentioned leakage inspection is performed while the edge ring ER is electrostatically adsorbed, the control unit CU only needs to perform a charge removal process on the edge ring ER before step S306 (or step S308 described later). Furthermore, in step S307, the control unit CU performs a feeding process of feeding the edge ring ER into the ring storage module RSM through the transfer robot TR1. This step S307 corresponds to Figure 6 Step S6.

[0162] On the other hand, in the case where the edge ring ER is displaced, the control unit CU performs a displacement elimination action for eliminating the displacement of the edge ring ER in step S308. In this displacement elimination action, for example, as shown in Figure 13 (A) to Figure 13 (C) of, the structure of the concave portion 114 provided on the edge ring ER and each support pin 521 can be utilized.

[0163] Specifically, the number of concave portions 114 on the lower surface of the edge ring ER is the same as that of each support pin 521. As shown in Figure 13 (A) of, each concave portion 114 includes a flat bottom portion 114a and a tapered portion 114b that surrounds the periphery of the bottom portion 114a and whose inner diameter expands as it goes toward the opening portion. The bottom portion 114a is formed wider than the outer diameter of the upper pin 524 of the support pin 521 and has a diameter of about 2 mm, for example. The tapered portion 114b is smoothly connected to the bottom portion 114a and the lower surface of the edge ring ER via an R portion.

[0164] When the edge ring ER having such a concave portion 114 generates a position offset, for example, it becomes a state where the upper end surface 524a of the support pin 521 faces the tapered portion 114b. In this case, as the displacement elimination action, the control unit CU performs an action of raising each support pin 521 through the plasma processing device 1.

[0165] That is, as shown in Figure 13 (B) of, when the support pin 521 is raised, its upper end surface 524a contacts the tapered portion 114b of the edge ring ER. Therefore, the tapered portion 114b slides along the inclination of the support pin 521. As a result, as shown in Figure 13 (C) of, the edge ring ER moves in the horizontal direction in such a way that the support pin 521 is guided to the approximate center of the bottom portion 114a. Through this movement in the horizontal direction, the offset of the edge ring ER is eliminated.

[0166] Return Figure 12, when performing the offset elimination operation in step S308, the control unit CU returns to step S303 and performs the leak check again. This is to confirm whether the offset of the edge ring ER has been eliminated by the offset elimination operation. Assuming that when the measured pressure is less than the pressure threshold, the offset of the edge ring ER has not been eliminated, so the offset elimination operation (step S308) is repeated. On the other hand, when the measured pressure is equal to or greater than the pressure threshold, the control unit CU proceeds to step S305, thereby ending the offset confirmation correction process.

[0167] As described above, the substrate processing system PS and the transfer method can also confirm the offset of the edge ring ER by performing the leak check. Also, the substrate processing system PS and the transfer method can correct the offset of the edge ring ER by utilizing the shapes of the concave portion 114 of the edge ring ER and the support pin 521. As a result, the transfer robot TR1 can transfer the edge ring ER without interfering with other components.

[0168] Figure 14 It is a flowchart showing the transfer method of the fourth example. The transfer method of the fourth example also performs a leak check in the processing module PM1, and confirms the state of the edge ring ER and transfers it. In addition, the description of the transfer method of the fourth example also details the case of transferring the ring 113 between the ring storage module RSM and the processing module PM1. When the processing module to be replaced is other processing modules PM2 to PM7, the same method as the case where the processing module to be replaced is the processing module PM1 can also be adopted.

[0169] When the control unit CU of the substrate processing system PS implements up to step S3 in Figure 6 the operation flow, as the transfer method of the fourth example, steps S401 to S410 are performed. Steps S401 to S410 are implemented by the control unit CU controlling each part of the substrate processing system PS.

[0170] Steps S401 to S404 can be the same as steps S301 to S304. In addition, after step S402 (before step S403), the control unit CU performs the process of electrostatically adsorbing the edge ring ER to the ring support surface 112b for the purpose of performing a leak check. In addition, when the pressure of the pressure sensor 67 is less than the pressure threshold in step S404 (step S404: No), the control unit CU proceeds to step S405, and when the pressure of the pressure sensor 67 is equal to or greater than the threshold (step S404: Yes), the control unit CU omits steps S405 to S408 and proceeds to step S409.

[0171] In step S405, the control unit CU operates the transfer robot TR1 to detect the position of the edge ring ER (an index regarding the position offset) by the position detection sensor S1 or S2. Thereby, the control unit CU receives the detection result of the position detection sensor S1 or S2, and can obtain the interval (position offset) between the substrate support surface 112a and the edge ring ER.

[0172] Next, the control unit CU can perform Figure 8 the correction movement shown in (D) to Figure 8 the correction movement shown in (F) by using this position offset. In addition, since the above-mentioned leak check is performed in a state where the edge ring ER is electrostatically adsorbed, the control unit CU can perform the charge removal process of the edge ring ER after the determination of "Yes" in step S404 and before step S406. Therefore, in step S406, the control unit CU raises the edge ring ER by each support pin 521 in a state where the adsorption between the ring support surface 112b and the edge ring ER is released. That is, after the detection of the position offset, it is possible to prevent the edge ring ER from further shifting in position, and the edge ring ER can be handed over to the transfer robot TR1. The subsequent step S407 can be the same operation as Figure 7 step S106 of Figure 7 and step S408 can be the same operation as

[0173] step S107 of Figure 6 In addition, the control unit CU performs a sending process of sending out the edge ring ER from the processing module PM1 by the transfer robot TR1 in step S409. This step S409 corresponds to Figure 6 step S5 of

[0174]

[0175] Figure 15 As described above, in the case where the transfer method of the fourth example identifies the shift of the edge ring ER during the leak check, the position of the edge ring ER is detected by the position detection sensor S1 or S2 of the transfer robot TR1. Therefore, the control unit CU can reliably grasp the position offset of the edge ring ER, and can move the edge ring ER for correction with high precision. As a result, the transfer method can transfer the edge ring ER without interfering with other components.It is a flowchart showing the transportation method of the fifth example. The transportation method of the fifth example is also a method of performing a leak check in the processing module PM1, and confirming the state of the edge ring ER and transporting it. In addition, the description of the transportation method of the fifth example also details the case of transporting the ring 113 between the ring storage module RSM and the processing module PM1. When the processing module to be replaced is other processing modules PM2 to PM7, the same method as when the processing module to be replaced is the processing module PM1 can also be adopted.

[0176] As the transportation method of the fifth example, when the control unit CU executes up to step S3 in the Figure 6 operation process, steps S501 to S511 are performed. Steps S501 to S511 are implemented by the control unit CU controlling each part of the substrate processing system PS.

[0177] Steps S501 to S504 can be the same as steps S301 to S304. In addition, after step S502 (before step S503), the control unit CU performs a process of electrostatically adsorbing the edge ring ER to the ring support surface 112b in order to perform a leak check. In addition, when the pressure of the pressure sensor 67 is less than the pressure threshold in step S504 (step S504: No), the control unit CU proceeds to step S505, and when the pressure is above the threshold (step S504: Yes), it proceeds to step S509.

[0178] Steps S505 and S506 can be the same as steps S205 and S206 of the transportation method of the second example. In addition, since the above-mentioned leak check is performed in a state where the edge ring ER is electrostatically adsorbed, the control unit CU only needs to perform a discharging process on the edge ring ER before step S505 (or step S509 described later).

[0179] In step S507, the control unit CU detects the position offset amount of the edge ring ER through the position detection sensors S11 and S12 provided near the gate (not shown) that separates the processing module PM1 in the vacuum transportation module TM. For example, when the transportation robot TR1 transports the edge ring ER, the control unit CU performs the detection of the position detection sensors S11 and S12, and calculates the position of the edge ring ER based on the position and time blocked by the edge ring ER. And the control unit CU calculates the position offset amount of the edge ring ER from the reference position (index regarding the position offset amount) according to the position of the edge ring ER and the predetermined reference position.

[0180] After calculating the position offset at the time of delivery, the control unit CU performs a delivery process of feeding the edge ring ER into the ring storage module RSM by the transfer robot TR1 (step S508). In the delivery process, when the control unit CU feeds the edge ring ER into the storage module (such as a box not shown) of the ring storage module RSM, it sets the movement amount of the transfer robot TR1 according to the position offset obtained in step S507 and performs a correction movement. As a result, the edge ring ER returns to the normal position through the transfer robot TR1 without interfering with the ring storage module RSM. Therefore, the control unit CU can smoothly store the edge ring ER without interfering with other components.

[0181] On the other hand, when the leakage amount is less than the threshold value, it can be said that the edge ring ER is not offset (or the position offset is small enough), so the control unit CU performs normal (without movement correction) delivery in steps S509 to S511. These steps S509 to S511 can be the same as steps S208 to S210.

[0182] As described above, in the fifth example of the delivery method, when the offset of the edge ring ER is identified during the leak check, the position detection sensors S11 and S12 of the vacuum transfer module TM detect the position of the edge ring ER. In this case, the control unit CU can also reliably grasp the position offset of the edge ring ER and can accurately correct the movement of the edge ring ER when feeding it into the ring storage module RSM.

[0183] In addition, when the position of the edge ring ER is detected by the position detection sensors S11 and S12 of the vacuum transfer module TM, after the detection, the edge ring ER may not be transported to the ring storage module RSM but temporarily returned to the processing module PM1 and the movement correction is performed within the processing module PM1.

[0184] Next, the delivery method when the state of the edge ring ER is confirmed by the camera CM of the transfer robot TR1 shown in (C) of Figure 5 is described. Figure 16 FIG. is a flowchart showing the processing flow of the delivery method of the sixth example. In addition, the description of the delivery method of the sixth example also details the case of transporting the ring 113 between the ring storage module RSM and the processing module PM1. When the processing module to be replaced is other processing modules PM2 to PM7, the same method as when the processing module to be replaced is the processing module PM1 can also be adopted.

[0185] The control unit CU of the substrate processing system PS is at Figure 6When the operation process reaches step S3, steps S601 to S609 are carried out. Steps S601 to S609 are carried out by controlling each part of the substrate processing system PS by the control unit CU.

[0186] Steps S601 and S602 can be the same as steps S101 and S102 of the transportation method of the first example.

[0187] In step S603, the control unit CU operates the transfer robot TR1, and the substrate support surface 112a and the edge ring ER are photographed by the camera CM to obtain photographing information as an index of the position offset amount. The control unit CU can extract the interval amount (position offset amount) between the substrate support surface 112a and the edge ring ER from the information of hue or contrast by performing image processing on the photographing information.

[0188] Therefore, the control unit CU judges whether the position offset amount of the edge ring ER is above the threshold value based on the position offset amount extracted from the photographing information and the threshold value stored in advance (step S604). When the position offset amount is less than the threshold value (step S604: No), it can be said that the edge ring ER is not offset (or the position offset amount is small enough). Therefore, the control unit CU skips steps S605 to S607 and immediately proceeds to step S608. On the other hand, when the position offset amount is above the threshold value (step S604: Yes), it can be said that the edge ring ER is offset (the position offset amount is large). In this case, the control unit CU detects an error of the edge ring ER and proceeds to Figure 16 step S605.

[0189] In addition, steps S605 to S607 can be the same as steps S105 to S107 of the transportation method of the first example.

[0190] In addition, in step S608, the control unit CU performs a sending process of sending out the edge ring ER from the processing module PM1 by the transfer robot TR1. This step S608 corresponds to Figure 6 step S5. Furthermore, in step S609, the control unit CU performs a feeding process of feeding the edge ring ER into the ring storage module RSM by the transfer robot TR1. This step S609 corresponds to Figure 6 step S6.

[0191] As described above, in the transportation method of the sixth example, by photographing the edge ring ER with the camera of the transfer robot TR1, the position offset amount of the edge ring ER can be obtained. Therefore, the control unit CU can operate the transfer robot TR1 based on the position offset amount of the photographing information, and can transport the edge ring ER without interfering with other components.

[0192] In addition, the transportation method in which the camera CM is applied to the structure of the transportation robot TR1 is not limited to the transportation method of the sixth example described above. For example, it can be used in combination with leak inspection, or in combination with the position detection sensors S11 and S12 of the vacuum transportation module TM. Regarding the position offset of the edge ring ER, by using the captured information of the camera CM (or the detection results of the position detection sensors S1 or S2) and the detection results of the position detection sensors S11 and S12, the detection accuracy and the accuracy of correcting the movement can be further improved. Also, in the transportation method of the sixth example, when obtaining an index of the position offset of the edge ring ER through the position detection sensor S1 or S2 of the transportation robot TR1, the detection can be performed in a state where the edge ring ER is supported by each support pin 521. That is, in step S601, the control unit CU can stop the support pin 521 at a position where the edge ring ER has left the ring support surface 112b and obtain the position offset through the position detection sensor S1 or S2, or can obtain the position offset through the position detection sensor S1 or S2 at any pin height that is higher than the leaving position and where the upper surface of the edge ring ER is lower than the position detection sensor S1 or S2 of the transportation robot TR1 (also refer to Figure 9 ).

[0193] In addition, in the configuration in which the camera CM is applied to the transportation robot TR1, as Figure 17 shown, by appropriately adjusting the shooting direction of the camera CM, it is possible to shoot not only the lower substrate support surface 112a or the edge ring ER but also the front in the transportation direction. Therefore, it is possible to use the camera CM to shoot the situation where the edge ring ER is tilted while being separated from a part of the support pins 521. Also, it is possible to use the camera CM to shoot the situation where the edge ring ER is separated from all the support pins 521 and supported on the electrostatic chuck 112.

[0194] The control unit CU can identify that the edge ring ER is tilted or the edge ring ER is separated from all the support pins by performing image processing and analysis on this captured information. For example, the camera CM captures a plurality of pieces of captured information while the transportation robot TR1 is moving, and the control unit CU calculates by making the edge ring ER of the plurality of pieces of captured information correspond to the position of the transportation robot TR1. Thus, the control unit CU can calculate the three-dimensional shape (orientation, position, etc.) of the edge ring ER with high precision. In addition, the control unit CU can also store the captured information obtained each time the edge ring ER is captured, and learn the identification of the edge ring ER based on the images of the edge ring ER included in the stored multiple pieces of captured information. Thus, when the captured information is obtained next time, the extraction accuracy of the edge ring ER can be improved from this captured information. The control unit CU can be configured to issue an alarm when it is recognized that the edge ring ER is tilted or the edge ring ER is separated from all the support pins.

[0195] Figure 18 is a diagram showing a modified example of (B) of the structure for performing a gas leak check using an index indicating the positional offset with respect to the edge ring, that is Figure 5 As shown in Figure 18 the structure for performing a leak check may also be a structure in which a groove 61ag that is recessed downward and communicates with the gas supply port 61a is provided in the ring support surface 112b at the peripheral portion of the electrostatic chuck 112. The groove 61ag is formed in an annular shape that surrounds the circumferential direction of the ring support surface 112b. With such a structure, the groove 61ag can also supply a gas such as He gas to the entire circumference of the back surface of the inner ring 113a to perform a gas leak check.

[0196] Figure 19 is a flowchart showing the operation process of transporting the edge ring ER of the modified example. As in Figure 19 the modified example shown, the substrate processing system PS and the transport method may also detect the offset of the edge ring ER by the position detection sensors S11 and S12 at the position of the vacuum transport module TM when the edge ring ER is sent out from the processing module PM1. Then, the substrate processing system PS corrects the position of the edge ring ER while feeding the edge ring ER into the ring storage module RSM based on the offset of the edge ring ER detected by the position detection sensors S11 and S12. In addition, when the processing module to be replaced is another processing module PM2 to PM7, the same method as when the processing module to be replaced is the processing module PM1 may be adopted. In this case, the position detection sensors may be sensors located at adjacent positions of each processing module.

[0197] The detection of the edge ring ER by the position detection sensors S11 and S12 can be performed, for example, by Figure 20 the method shown in Figure 20 (A) of is a diagram showing the relationship between the position of the edge ring ER and the positions of the position detection sensors S11 and S12. Figure 20 (B) of is a diagram showing the change in the sensor output of the position detection sensors S11 and S12 when the edge ring ER is transported from the position P21 to the position P24. In Figure 20In (B), t21 represents the time at position P21, t22 represents the time at position P22, t23 represents the time at position P23, and t24 represents the time at position P24. The control unit CU calculates the offset of the edge ring ER from the reference position based on the position of the edge ring ER detected by the position detection sensors S11 and S12 and a pre-determined reference position. Next, the control unit CU places the edge ring ER on the ring storage module RSM by means of the transfer robot TR1 to correct the calculated offset. Thereby, even when the position of the edge ring ER held by the upper fork FK1 or the lower fork FK2 deviates from the reference position, the edge ring ER can be placed at a specified position on the ring storage module RSM.

[0198] The position of the edge ring ER held by the upper fork FK1 or the lower fork FK2 can be calculated based on the change in the output of the position detection sensors S11 and S12 caused by the inner peripheral portion of the edge ring ER passing through the position detection sensors S11 and S12. For example, as Figure 20 shown in (A), when the edge ring ER is transported from position P21 to position P24, it can be calculated based on the time T2 of the edge ring ER moving from position P22 to position P23. Position P22 is the position where the sensor outputs of the position detection sensors S11 and S12 change from the low (L) level to the high (H) level, and position P23 is the position where the sensor outputs of the position detection sensors S11 and S12 change from the high (H) level to the low (L) level. Specifically, as Figure 20 shown in (B), the time t22 at position P22 and the time t23 at position P23 can be used, and T2 = t23 - t22 can be used for calculation. In addition, in Figure 20 , the case where the position where the position detection sensor S11 is shielded by the edge ring ER is the same as the position where the position detection sensor S12 is shielded by the edge ring ER is shown, but these positions can also be different.

[0199] The control unit CU controls Figure 19 steps S701 to S706 of Figure 19 . The control unit CU first raises each support pin 521 of the plasma processing apparatus 1, thereby separating the edge ring ER from the ring support surface 112b of the substrate support portion 11 (

[0200] step S701 of Figure 19 ). When there is residual adsorption between the ring support surface 112b and the edge ring ER, the edge ring ER may shift during the ascent.

[0201] After that, the control unit CU sends the transfer robot TR1 out of the processing module PM1. At this time, the positions of the held edge ring ER are detected by the position detection sensors S11 and S12 (step S703). At this time, the transfer robot TR1 moves in such a way as to pass through the middle of the position detection sensors S11 and S12. When the edge ring ER is not offset, the center of the edge ring ER passes through this middle. On the other hand, when the edge ring ER is offset, the offset of the edge ring ER can be calculated by the position detection sensors S11 and S12 (the position offset amount and the position offset direction of the center of the edge ring ER relative to the reference position of the transfer robot TR).

[0202] Next, the control unit CU compares the threshold value pre-stored with the position offset amount of the edge ring ER, and determines whether the position offset amount of the edge ring ER is equal to or greater than the threshold value (step S704). When the position offset amount is less than the threshold value (step S704: No), it can be said that the edge ring ER is not offset (or the position offset amount is small enough). In this case, the control unit CU proceeds to step S105.

[0203] In step S105, the control unit CU transports the edge ring ER without correcting the movement of the transfer robot TR1, and sends the edge ring ER into the ring storage module. Thus, the substrate processing system PS can smoothly send the edge ring ER into the ring storage module RSM.

[0204] On the other hand, when the position offset amount is equal to or greater than the threshold value (step S704: Yes), it can be said that the edge ring ER is offset (the position offset amount is large). In this case, the control unit CU proceeds to Figure 19 step S106, and while correcting the movement of the transfer robot TR1 based on the offset of the edge ring ER calculated according to the detection results of the position detection sensors S11 and S12, the edge ring ER is sent into the ring storage module. At this time, the control unit CU sets the movement amount and the movement direction in the correction movement of the transfer robot TR1 based on the obtained offset amount and the offset direction, and corrects the movement of the transfer robot TR1. Therefore, even when the edge ring ER is offset, the substrate processing system PS can smoothly send the edge ring ER into the ring storage module RSM.

[0205] In addition, Figure 19 the above-mentioned transfer method can also be applied to the case of sending the cover ring CR from the processing modules PM1 to PM7 to the vacuum transfer module TM and transporting it to the ring storage module RSM. In addition, Figure 19 the above-mentioned transfer method can also be applied to the case of Figure 11 sending the upper ring 222 or the lower ring 221 from the processing modules PM1 to PM7 to the vacuum transfer module TM and transporting it to the load interlock module LLM. And, Figure 19The transportation method can also be applied to the case of sending the upper ring 222 or the lower ring 221 of Figure 11 from the processing modules PM1 to PM7 to the vacuum transportation module TM and transporting them to the ring storage module RSM.

[0206] Alternatively, as another modification example, after the substrate processing system PS and the transportation method raise the edge ring ER using each support pin 521, they can lower the edge ring ER and place it on the ring support surface 112b, detect the position of the edge ring ER using the position detection sensors S1 and S2, and if the position offset is less than the threshold, raise the edge ring ER again using each support pin 521, transfer the edge ring ER to the transportation robot TR1, perform the sending process from the processing module PM1 (detect the position of the edge ring ER using the position detection sensors S11, S12, etc. and send it out), and perform the feeding process to the ring storage module RSM (correction movement based on the position offset). In the sending process of the edge ring ER from the processing module PM1 and the feeding process to the ring storage module RSM, the above Figure 19 shown processing flow can be performed. On the other hand, when the position offset of the edge ring ER is equal to or greater than the threshold, the substrate processing system PS and the transportation method can also issue an alarm and perform the process of opening the plasma processing chamber 10 to the atmosphere to take out the edge ring ER.

[0207] The embodiments disclosed above include the following ways, for example.

[0208] (Supplementary Note 1)

[0209] A substrate processing system, comprising:

[0210] A processing module having a processing chamber, a substrate support portion for supporting a substrate and a ring disposed around the substrate in the processing chamber, and a lifter configured to be able to lift and lower the ring;

[0211] A vacuum transportation module connected to the processing module and having a transportation robot for transporting the ring; and

[0212] A control unit,

[0213] The control unit performs the following steps:

[0214] (A) A step of raising the lifter to separate the ring from the support surface of the substrate support portion;

[0215] (B) After the step of (A), a step of obtaining an index regarding the position offset of the ring; and

[0216] (C) A step of determining whether to correct the position of the ring based on the index regarding the position offset obtained in the step of (B).

[0217] (Supplementary Note 2)

[0218] According to the substrate processing system described in Supplementary Note 1, wherein in the step (B), the control unit obtains the position of the ring detected by the position detection sensor provided in the transfer robot as an index regarding the position offset amount.

[0219] (Supplementary Note 3)

[0220] According to the substrate processing system described in Supplementary Note 2, wherein in the step (B), the control unit obtains the horizontal interval amount between the ring and the substrate support surface based on the position of the substrate support surface of the substrate support part detected by the position detection sensor and the position of the ring.

[0221] (Supplementary Note 4)

[0222] According to the substrate processing system described in any one of Supplementary Notes 1 to 3, wherein in the step (B), the control unit supplies gas between the support surface and the back surface of the ring in a state where the ring is electrostatically adsorbed to the support surface of the substrate support part, and obtains the gas leakage amount as an index regarding the position offset amount.

[0223] (Supplementary Note 5)

[0224] According to the substrate processing system described in any one of Supplementary Notes 1 to 4, wherein in the step (B), the control unit obtains the shooting information of the ring captured by the camera provided in the transfer robot as an index regarding the position offset amount.

[0225] (Supplementary Note 6)

[0226] According to the substrate processing system described in any one of Supplementary Notes 1 to 5, wherein in the step (B), when the ring is sent out from the processing module by the transfer robot, the control unit obtains the position of the ring detected by the position detection sensor provided in the vacuum transfer module as an index regarding the position offset amount.

[0227] (Supplementary Note 7)

[0228] According to the substrate processing system described in any one of Supplementary Notes 1 to 6, wherein when the control unit determines to perform the correction in the step (C), the transfer robot performs a correction movement to move the ring according to the position offset amount, and when the control unit determines not to perform the correction in the step (C), the transfer robot transports the ring without performing the correction movement.

[0229] (Supplementary Note 8)

[0230] According to the substrate processing system described in Supplementary Note 7, wherein when the control unit determines in step (C) that the correction is to be performed, the correction movement is performed by the transfer robot within the processing module.

[0231] (Supplementary Note 9)

[0232] According to the substrate processing system described in Supplementary Note 8, wherein the control unit sequentially performs the following steps during the correction movement: a step of receiving, by the transfer robot, the ring that has deviated from the elevator; a step of moving the transfer robot according to the position deviation amount; and a step of handing over the ring from the transfer robot to the elevator.

[0233] (Supplementary Note 10)

[0234] According to the substrate processing system described in Supplementary Note 8, wherein the control unit moves the transfer robot according to the position deviation amount before handing over the ring from the elevator to the transfer robot during the correction movement.

[0235] (Supplementary Note 11)

[0236] According to the substrate processing system described in Supplementary Note 7, wherein when the control unit determines in step (C) that the correction is to be performed, the transfer robot performs the correction movement on the deviated ring while transporting it to a ring storage module for storing the ring.

[0237] (Supplementary Note 12)

[0238] According to the substrate processing system described in any one of Supplementary Notes 1 to 3 and 5, wherein in step (B), the control unit lowers the elevator to a state where the ring is placed on the substrate support portion to obtain an index regarding the position deviation amount.

[0239] (Supplementary Note 13)

[0240] According to the substrate processing system described in any one of Supplementary Notes 1 to 3 and 5, wherein in step (A), the control unit maintains the state where the elevator has lifted the ring, and in step (B), obtains an index regarding the position deviation amount.

[0241] (Supplementary Note 14)

[0242] According to the substrate processing system described in any one of Supplementary Notes 1 to 13, wherein there is a first ring storage module for storing the ring, which is connected to the vacuum transfer module.

[0243] The control unit sends the ring sent out from the processing module by the transfer robot into the first ring storage module.

[0244] (Supplementary Note 15)

[0245] The substrate processing system according to any one of Supplementary Notes 1 to 13, comprising:

[0246] An atmospheric transfer module connected to the vacuum transfer module via a load lock module; and

[0247] A second ring storage module connected to the atmospheric transfer module for storing the ring,

[0248] The control unit sends the ring sent out from the processing module by the transfer robot into the second ring storage module via the load lock module and the atmospheric transfer module.

[0249] (Supplementary Note 16)

[0250] The substrate processing system according to any one of Supplementary Notes 1 to 15, wherein the processing module performs substrate processing in a state where the ring is electrostatically adsorbed.

[0251] The control unit performs a step of discharging the ring before the step (A).

[0252] (Supplementary Note 17)

[0253] The substrate processing system according to any one of Supplementary Notes 1 to 16, wherein the control unit generates plasma during or before and after the step (A) to clean the processing chamber.

[0254] (Supplementary Note 18)

[0255] The substrate processing system according to Supplementary Note 17, wherein the cleaning of the processing chamber during or after the step (A) is performed in a state where the ring has left the support surface of the substrate support portion.

[0256] (Supplementary Note 19)

[0257] The substrate processing system according to any one of Supplementary Notes 1 to 18, wherein the lift has a support pin and an actuator for moving the support pin up and down.

[0258] (Supplementary Note 20)

[0259] A transport method, in which a ring is sent out from a processing module by a transport robot of a vacuum transport module connected to the processing module, wherein the processing module has a processing chamber, a substrate support portion that supports a substrate and the ring disposed around the substrate in the processing chamber, and a lifter configured to be able to lift and lower the ring, and the transport method includes:

[0260] (A) a step of raising the lifter to separate the ring from the support surface of the substrate support portion;

[0261] (B) a step of obtaining an index of the position offset amount of the ring after the step (A); and

[0262] (C) a step of determining whether to correct the position of the ring based on the index of the position offset amount obtained in the step (B).

[0263] In addition, the present invention is not limited to the structures and combinations with other elements such as those listed in the above embodiments and shown herein. Regarding these aspects, changes can be made within the scope not departing from the gist of the present invention and can be appropriately determined according to its application mode. In addition, matters described in multiple embodiments can also adopt other structures within a non - contradictory range, and can also be combined within a non - contradictory range.

[0264] For example, in the above embodiment, a capacitively - coupled plasma device is taken as an example for illustration, but it is not limited thereto, and it can also be applied to other plasma devices. For example, an inductively - coupled plasma (ICP) device can be used instead of the capacitively - coupled plasma device. In this case, the inductively - coupled plasma device includes an antenna and a lower electrode. The lower electrode is disposed inside the substrate support portion, and the antenna is disposed above or on the upper part of the chamber. Moreover, an RF generator is coupled to the antenna, and a DC generator is coupled to the lower electrode. Therefore, the RF generator is coupled to the upper electrode of the capacitively - coupled plasma device or the antenna of the inductively - coupled plasma device. That is, the RF generator is coupled to the plasma processing chamber 10.

[0265] This application claims the priority of the basic application No. 2022 - 174836 filed with the Japan Patent Office on October 31, 2022, and is incorporated herein by reference in its entirety.

[0266] Description of Reference Numerals

[0267] 11 Substrate support portion

[0268] 113 Ring

[0269] 521 Support pin

[0270] CU control unit

[0271] PM1 - PM7 processing modules

[0272] PS substrate processing system

[0273] TM vacuum transportation module

[0274] TR1 and TR2 transportation robots

[0275] Substrate W.

Claims

1. A substrate processing system, characterized in that, comprising: a processing module having a processing chamber, a substrate support portion for supporting a substrate and a ring disposed around the substrate in the processing chamber, and a lifter configured to be able to lift and lower the ring; a vacuum transfer module connected to the processing module and having a transfer robot for transferring the ring; and a control unit, wherein the control unit performs the following steps: (A) a step of raising the lifter to separate the ring from the support surface of the substrate support portion; (B) a step of obtaining an index of the position offset of the ring after the step (A); and (C) a step of determining whether to correct the position of the ring based on the index of the position offset obtained in the step (B).

2. The substrate processing system according to claim 1, characterized in that: in the step (B), the control unit obtains the position of the ring detected by a position detection sensor provided in the transfer robot as the index of the position offset.

3. The substrate processing system according to claim 2, characterized in that: in the step (B), the control unit obtains the horizontal interval between the ring and the substrate support surface based on the position of the substrate support surface of the substrate support portion and the position of the ring detected by the position detection sensor.

4. The substrate processing system according to claim 1, characterized in that: in the step (B), the control unit supplies gas between the support surface and the back surface of the ring in a state where the ring is electrostatically adsorbed to the support surface of the substrate support portion and obtains the gas leakage amount as the index of the position offset.

5. The substrate processing system according to claim 1, characterized in that: in the step (B), the control unit obtains the captured information of the ring captured by a camera provided in the transfer robot as the index of the position offset.

6. The substrate processing system according to claim 1, characterized in that: in the step (B), when the ring is sent out from the processing module by the transfer robot, the control unit obtains the position of the ring detected by a position detection sensor provided in the vacuum transfer module as the index of the position offset.

7. The substrate processing system according to any one of claims 1 to 6, characterized in that: when the control unit determines to perform the correction in the step (C), the transfer robot performs a correction movement to move the ring according to the position offset, and when the control unit determines not to perform the correction in the step (C), the transfer robot transports the ring without performing the correction movement.

8. The substrate processing system according to claim 7, characterized in that: when the control unit determines to perform the correction in the step (C), the transfer robot performs the correction movement within the processing module.

9. The substrate processing system according to claim 8, It is characterized in that: During the correction movement, the control unit sequentially performs the following steps: Receiving, by the transfer robot, the offset ring from the elevator; Moving the transfer robot according to the position offset; and Handing over the ring from the transfer robot to the elevator.

10. The substrate processing system according to claim 8, It is characterized in that: During the correction movement, before handing over the ring from the elevator to the transfer robot, the control unit moves the transfer robot according to the position offset.

11. The substrate processing system according to claim 7, It is characterized in that: When the control unit determines to perform the correction in step (C), the transfer robot performs the correction movement on the offset ring while transporting it to the ring storage module for storing the ring.

12. The substrate processing system according to any one of claims 1 to 3 and 5, It is characterized in that: In step (B), the control unit lowers the elevator to a state where the ring is placed on the substrate support portion to obtain an index regarding the position offset.

13. The substrate processing system according to any one of claims 1 to 3 and 5, It is characterized in that: In step (A), the control unit maintains the state where the elevator has lifted the ring, and in step (B), obtains an index regarding the position offset.

14. The substrate processing system according to any one of claims 1 to 6, It is characterized in that: It has a first ring storage module for storing the ring, which is connected to the vacuum transfer module, The control unit sends the ring sent out from the processing module by the transfer robot into the first ring storage module.

15. The substrate processing system according to any one of claims 1 to 6, It is characterized in that, It includes: An atmospheric transfer module connected to the vacuum transfer module via a load lock module; And A second ring storage module for storing the ring, which is connected to the atmospheric transfer module, The control unit sends the ring sent out from the processing module by the transfer robot into the second ring storage module via the load lock module and the atmospheric transfer module.

16. The substrate processing system according to any one of claims 1 to 6, It is characterized in that: The processing module performs substrate processing in a state where the ring is electrostatically adsorbed, Before step (A), the control unit performs a step of discharging the ring.

17. The substrate processing system according to any one of claims 1 to 6, It is characterized in that: The control unit generates plasma in step (A) or before and after step (A) to clean the processing chamber.

18. The substrate processing system according to claim 17, It is characterized in that: The cleaning of the processing chamber in step (A) or after step (A) is performed in a state where the ring has left the support surface of the substrate support portion.

19. The substrate processing system according to any one of claims 1 to 6, characterized in that: the elevator has a support pin and an actuator for moving the support pin up and down.

20. A transportation method, which sends out a ring from a processing module by a transportation robot of a vacuum transportation module connected to the processing module, wherein, the processing module has a processing chamber, a substrate support portion for supporting a substrate and the ring disposed around the substrate in the processing chamber, and an elevator configured to be able to lift the ring, and is characterized by including: (A) a step of raising the elevator to separate the ring from the support surface of the substrate support portion; (B) a step of obtaining an index of the position offset of the ring after the step of (A); and (C) a step of determining whether to correct the position of the ring based on the index of the position offset obtained in the step of (B).

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