Detection equipment for semiconductor crystal ingot

Abstract

The invention discloses semiconductor crystal ingot detection equipment, which comprises a first type of test electrode, a second type of test electrode, a third type of test electrode, a fourth type of test electrode and a fifth type of test electrode, the second type of test electrode is used for being disconnected from the crystal ingot on the other side of the crystal ingot; and the electrical parameter testing device is electrically connected with the first type of testing electrodes and the second type of testing electrodes respectively, so that the electrical parameter testing device detects voltage or current between the first type of testing electrodes and the second type of testing electrodes. The semiconductor crystal ingot detection equipment has the beneficial effects that the semiconductor crystal ingot detection equipment is simple and reliable in structure and can effectively detect the electrical parameters of the crystal ingot.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor performance detection, and more particularly, to a detection device for semiconductor ingots. Background Art

[0002] An ingot, also called a single crystal silicon rod, is a silicon material with extremely high purity and is widely used in the electronics industry.

[0003] To ensure the smooth progress of subsequent processes, it is necessary to detect the ingot to understand its parameters such as carrier concentration and mobility.

[0004] However, there is currently no device that can effectively detect the electrical parameters of the ingot. Summary of the Invention

[0005] The content part of this application is used to briefly introduce concepts, which will be described in detail in the subsequent specific implementation part. The content part of this application is not intended to identify the key features or essential features of the claimed technical solution, nor is it intended to limit the scope of the claimed technical solution.

[0006] Some embodiments of this application propose methods, devices, electronic devices, and computer-readable media to solve the technical problems mentioned in the above background art part.

[0007] As a first aspect of this application, some embodiments of this application provide a detection device for a semiconductor ingot, including: A first type of test electrode for making contact with the ingot on one side of the ingot; A second type of test electrode for making contact with the ingot on the other side of the ingot; An electrical parameter test device electrically connected to the first type of test electrode and the second type of test electrode respectively so that the electrical parameter test device detects the voltage or current between the first type of test electrode and the second type of test electrode.

[0008] Optionally, in some embodiments of this application, the detection device for the semiconductor ingot further includes: a first conductive electrode for making contact with the ingot at one end of the ingot; a second conductive electrode for making contact with the ingot at the other end of the ingot; wherein, the first conductive electrode and the second conductive electrode are respectively electrically connected to the electrical parameter test device so that the current provided by the electrical parameter test device passes through the ingot.

[0009] Optionally, in some embodiments of this application, the detection device for the semiconductor ingot includes a plurality of the first type of test electrodes and a plurality of the second type of test electrodes; the first type of test electrodes and the second type of test electrodes are arranged in correspondence.

[0010] Optionally, in some embodiments of the present application, a certain distance is provided between multiple first - type test electrodes in the length direction of the ingot; a certain distance is provided between multiple second - type test electrodes in the length direction of the ingot.

[0011] Optionally, in some embodiments of the present application, the spacing between multiple first - type test electrodes in the length direction of the ingot is equal; the spacing between multiple second - type test electrodes in the length direction of the ingot is equal.

[0012] Optionally, in some embodiments of the present application, the spacing between multiple first - type test electrodes in the length direction of the ingot is equal to the spacing between multiple second - type test electrodes in the length direction of the ingot.

[0013] Optionally, in some embodiments of the present application, the detection device for the semiconductor ingot further includes: a measuring cylinder for forming an inner space for placing the ingot; wherein the first - type test electrodes and the second - type test electrodes are detachably mounted on the side wall of the measuring cylinder.

[0014] Optionally, in some embodiments of the present application, the detection device for the semiconductor ingot further includes: a measuring cylinder for forming an inner space for placing the ingot; an electrode driving device for driving the first - type test electrodes and the second - type test electrodes to move along the length direction of the ingot.

[0015] Optionally, in some embodiments of the present application, the detection device for the semiconductor ingot further includes: a compensation driving device for driving the measuring cylinder to move along the length direction of the ingot.

[0016] Optionally, in some embodiments of the present application, the first - type test electrodes and the second - type test electrodes are configured as roller electrodes.

[0017] The beneficial effect of the present application is: providing a detection device for a semiconductor ingot with a simple and reliable structure that can effectively detect the electrical parameters of the ingot. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings forming a part of this application are used to provide a further understanding of this application, making other features, objectives, and advantages of this application more obvious. The schematic embodiments and descriptions of the drawings of this application are used to explain this application and do not constitute an improper limitation of this application.

[0019] In addition, throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the elements and components are not necessarily drawn to scale.

[0020] In the drawings: Figure 1 Schematic diagram of a semiconductor ingot detection device according to the first embodiment of the present application; Figure 2 External schematic diagram of a semiconductor ingot detection device according to the second embodiment of the present application; Figure 3 is Figure 2 Internal structure schematic diagram of the semiconductor ingot detection device shown; Figure 4 is Figure 2 Partial structure schematic diagram of the semiconductor ingot detection device shown; Figure 5 First cross-sectional schematic diagram of a semiconductor ingot detection device according to the third embodiment of the present application; Figure 6 is Figure 5 Second cross-sectional schematic diagram of the semiconductor ingot detection device shown; Figure 7 is Figure 5 Schematic diagram of a part of the structure of the semiconductor ingot detection device shown; Figure 8 is Figure 5 Schematic diagram of another part of the structure of the semiconductor ingot detection device shown; Figure 9 is Figure 5 Schematic diagram of yet another part of the structure of the semiconductor ingot detection device shown; Figure 10 is Figure 10 Partial cross-sectional structure schematic diagram shown; Figure 11 is Figure 5 Schematic diagram of still another part of the structure of the semiconductor ingot detection device shown; Figure 12 is Figure 11 Schematic diagram when the part shown is observed from another perspective; Figure 13 is Figure 5 First partial structure schematic diagram of the semiconductor ingot detection device shown; Figure 14 is Figure 5 Second partial structure schematic diagram of the semiconductor ingot detection device shown.

[0021] Meanings of the reference numerals in the figure: 10. Ingot; 100. Detection device; 110. First type of test electrode; 120. Second type of test electrode; 130. First conductive electrode; 140. Second conductive electrode; 150. Electrical parameter test device; 160. First magnetic field device; 170. Second magnetic field device; 20. Ingot; 200. Detection device; 210. First type of test electrode; 220. Second type of test electrode; 250. Electrical parameter test device; 260. Main chassis, 270. Placing table; 280. Measuring cylinder; 281. Installation slot hole; 290. Installation component; 291. Installation sleeve; 292. Installation block; 293. Installation nut; 30. Ingot; 300. Detection device; 310. First type of test electrode; 320. Second type of test electrode; 330. First conductive electrode; 340. Second conductive electrode; 350. Main chassis, 360. Measuring cylinder; 361. Guide groove; 370. Electrode driving device; 371. Guide rod; 372. Slide; 373. Driving belt; 374. Driving pulley; 375. Wheel seat; 376. Electrode driving motor; 380. Supplementary driving device; 381. Base; 382. Guide post; 383. Base; 384. Lifting cam; 385. Driving gear; 386. Driven gear; 387. Supplementary driving motor. Detailed implementation manners

[0022] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to more thoroughly and completely understand the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are only for exemplary purposes and are not used to limit the protection scope of the present disclosure.

[0023] In addition, it should be noted that only parts related to the relevant invention are shown in the drawings for the convenience of description. Without conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other.

[0024] It should be noted that the concepts such as "first" and "second" mentioned in the present disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order of functions performed by these devices, modules or units or their interdependent relationships.

[0025] It should be noted that the modifications of "one" and "multiple" mentioned in the present disclosure are illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly specified in the context, it should be understood as "one or more".

[0026] The names of the messages or information exchanged between multiple devices in the embodiments of the present disclosure are for illustrative purposes only and are not used to limit the scope of these messages or information.

[0027] The present disclosure will be described in detail below with reference to the accompanying drawings and in conjunction with embodiments.

[0028] Refer to Figure 1 As shown, the detection device 100 for a semiconductor ingot of the present application includes: a first type of test electrode 110, a second type of test electrode 120, a first conductive electrode 130, a second conductive electrode 140, an electrical parameter test device 150, etc.

[0029] Among them, the first type of test electrode 110 is used to contact the ingot 10 on one side of the ingot 10; the second type of test electrode 120 is used to contact the ingot 10 on the other side of the ingot 10; the electrical parameter test device 150 is electrically connected to the first type of test electrode 110 and the second type of test electrode 120 respectively so that the electrical parameter test device 150 can detect the voltage or current between the first type of test electrode 110 and the second type of test electrode 120. The first conductive electrode 130 is used to contact the ingot 10 at one end of the ingot 10; the second conductive electrode 140 is used to contact the ingot 10 at the other end of the ingot 10; the first conductive electrode 130 and the second conductive electrode 140 are electrically connected to the electrical parameter test device 150 respectively so that the current provided by the electrical parameter test device 150 passes through the ingot 10. The first conductive electrode 130 and the second conductive electrode 140 mainly guide the bias current through the ingot 10, so that the ingot 10 has corresponding electric and magnetic fields.

[0030] With the above solution, the electrical parameter test device 150 can measure magnetoelectric parameters of the ingot 10 such as carrier concentration and carrier mobility by detecting the voltage or current between the first type of test electrode 110 and the second type of test electrode 120.

[0031] Refer to Figure 1 As shown, in some embodiments of the present application, the detection device 100 for a semiconductor ingot includes a plurality of first type of test electrodes 110 and a plurality of second type of test electrodes 120; the first type of test electrode 110 and the second type of test electrode 120 are arranged correspondingly. That is, the first type of electrode and the second type of electrode are symmetrically arranged with respect to the axis of the ingot 10.

[0032] With the solution of arranging the first type of test electrode 110 and the second type of test electrode 120 correspondingly, a certain cross-section of the ingot 10 can be measured.

[0033] Refer to Figure 1As shown, in some embodiments of the present application, a plurality of first - type test electrodes 110 are spaced apart at a certain distance in the length direction of the ingot 10; a plurality of second - type test electrodes 120 are spaced apart at a certain distance in the length direction of the ingot 10.

[0034] Adopting such a solution, the electrical parameter testing device 150 can also detect the voltage and current between two first - type test electrodes 110 to obtain the corresponding magnetoelectric parameters.

[0035] Referring to Figure 1 As shown, in some embodiments of the present application, the spacing between a plurality of first - type test electrodes 110 in the length direction of the ingot 10 is equal; the spacing between a plurality of second - type test electrodes 120 in the length direction of the ingot 10 is equal.

[0036] Referring to Figure 1 As shown, in some embodiments of the present application, the spacing between a plurality of first - type test electrodes 110 in the length direction of the ingot 10 is equal to the spacing between a plurality of second - type test electrodes 120 in the length direction of the ingot 10.

[0037] Adopting such a solution, the electrical parameter testing device 150 can perform multiple groups of detections and calculations at equal distances.

[0038] As a specific solution, the first - type test electrodes 110, the second - type test electrodes 120, the first conductive electrode 130, and the second conductive electrode 140 can all be made of conductive metal materials and can be made into shapes that are convenient for contacting the ingot 10.

[0039] When detecting an ingot such as silicon, the detection can be carried out without a magnetic field condition, but when detecting a semiconductor ingot such as InSb, the detection needs to be carried out under a magnet condition.

[0040] Referring to Figure 1 As shown, the detection device 100 for detecting a semiconductor ingot of the present application further includes: a first magnetic field device 160 and a second magnetic field device 170. The first magnetic field device 160 and the second magnetic field device 170 are respectively arranged on opposite sides of the ingot 10, so as to apply a perpendicular magnetic field on both sides of the ingot 10. During measurement, the first magnetic field device 160 and the second magnetic field device 170 can be moved so that the center of the magnetic field is aligned with the test point, thereby obtaining the magnetoelectric parameters of the corresponding test point, and then calculating the mobility and the concentration data of electrons (holes). It is also possible to achieve the alignment action of the magnetic field and the test point by moving the ingot 10.

[0041] As a specific solution, the first magnetic field device 160 and the second magnetic field device 170 can use permanent magnets or electromagnets.

[0042] Referring to Figure 2As shown in the figure, the inspection device 200 for a semiconductor ingot according to the second embodiment of the present application. In addition to the aforementioned first type of test electrode 210, second type of test electrode 220, first conductive electrode, second conductive electrode, and electrical parameter test device, the inspection device 200 further includes: a main chassis 260 and a placement table 270.

[0043] Referring Figure 2 and Figure 3 As shown in the figure, the main chassis 260 is used to form a space for accommodating the ingot 20, and the placement table 270 is used to place the electrical parameter test device 250. The placement table 270 can be fixed on one side of the main chassis 260 according to the user's needs.

[0044] Referring Figure 3 As shown in the figure, the inspection device 200 is provided with a measuring cylinder 280 inside the main chassis 260; that is, the inspection device 200 further includes a measuring cylinder 280, and its main function is to accommodate the ingot 20. Therefore, the measuring cylinder 280 is formed with an inner space for placing the ingot 20. In order to inspect the ingot 20, that is, to make the first type of test electrode 210 and the second type of test electrode 220 contact the ingot 20 inside the measuring cylinder 280. The cylinder wall of the measuring cylinder 280 is provided with a plurality of mounting slots 281; the first type of test electrode 210 and the second type of test electrode 220 can be mounted to the mounting slots 281 to achieve contact with the ingot 20.

[0045] Specifically, in order to be able to arrange the first type of test electrode 210 and the second type of test electrode 220 according to the aforementioned embodiment, two columns of mounting slots 281 are respectively provided on opposite sides of the measuring cylinder 280; the distance between the mounting slots 281 belonging to the same column can be equal; the mounting slots 281 that do not belong to the same column can be aligned in the height direction (that is, the length direction of the ingot 20 when the ingot 20 is placed vertically).

[0046] Referring Figure 4 As shown in the figure, in order to be able to mount the second type of test electrode 220 (of course, it can also be the first type of test electrode 210), the inspection device 200 further includes: a mounting assembly 290. The mounting assembly 290 is used to detachably mount the first type of test electrode 210 or the second type of test electrode 220 in the mounting slots 281 of the measuring cylinder 280. As an optional solution, the measuring cylinder 280 can be made of an insulating material.

[0047] Specifically, the installation component 290 includes: an installation sleeve 291, an installation block 292, and an installation nut 293. Among them, the installation sleeve 291 is used to be sleeved on the first type of test electrode 210 or the second type of test electrode 220; the installation sleeve 291 is provided with a sleeve hole for the first type of test electrode 210 or the second type of test electrode 220 to pass through; the first type of test electrode 210 or the second type of test electrode 220 is fixedly connected to the installation sleeve 291 through interference fit or the like. Since both the first type of test electrode 210 and the second type of test electrode 220 are conductors, the installation sleeve 291 is made of insulating material. In this way, by adjusting the installation sleeve 291, the adjustment of the first type of test electrode 210 and the second type of test electrode 220 can be achieved.

[0048] More specifically, the installation sleeve 291 may be provided with an external thread, the installation nut 293 is provided with a corresponding internal thread, the installation block 292 is provided with a sleeve hole for the installation sleeve 291 to pass through, and the sleeve hole is a smooth hole, that is, the installation sleeve 291 can slide relative to the installation block 292, and the installation nut 293 is sleeved on the outside of the installation sleeve 291, and the position of the installation sleeve 291 can be locked by screwing in the installation nut 293, that is, the positions of the first type of test electrode 210 and the second type of test electrode 220 are locked. The installation block 292 can be clamped into the installation slot hole 281 of the measuring cylinder 280.

[0049] In this solution, the first conductive electrode (not shown in the figure) and the second conductive electrode (not shown in the figure) can be in contact with the ingot 20 in a manually fixed manner, or can be realized by means such as the first type of test electrode 210 and the second type of test electrode 220 being installed to the installation slot holes 281 at the top or bottom through the installation component 290. Of course, the first conductive electrode and the second conductive electrode can also be provided on the inner wall of the measuring cylinder 280. It should be noted that the first conductive electrode and the second conductive electrode may not contact the end of the ingot 20, but may also contact the side surface of the end of the ingot 20, as long as all the first type of test electrodes 210 and the second type of test electrodes 220 are arranged between the first conductive electrode and the second conductive electrode.

[0050] In summary, the above solution also provides a detection device 200, which further includes: a measuring cylinder 280, and the measuring cylinder 280 is used to form an inner space for placing the ingot 20; and, the first type of test electrode 210 and the second type of test electrode 220 are detachably installed on the side wall of the measuring cylinder 280.

[0051] Refer to Figures 5 to 14 As shown, as the detection device 300 of the semiconductor ingot according to the second embodiment of the present application, the main improvement of the detection device 300 is that a movable first type of test electrode 310 and a second type of test electrode 320 are used to replace multiple groups of fixed first type of test electrodes 310 and second type of test electrodes 320.

[0052] Reference Figures 5 to 14 As shown, in addition to the first type of test electrode 310, the second type of test electrode 320, the first conductive electrode 330 (not shown in the figure), the second conductive electrode 340 (not shown in the figure), the electrical parameter test device (not shown in the figure), the main chassis 350 and the placement table (not shown in the figure), the detection device 300 further includes: an electrode driving device 370 and a supplementary driving device 380.

[0053] Among them, the electrode driving device 370 is used to drive the first type of test electrode 310 and the second type of test electrode 320 to move along the length direction of the ingot 30; the compensation driving device is used to drive the measuring cylinder 360 to move along the length direction of the ingot 30.

[0054] Reference Figures 5 to 14 As shown, the first type of test electrode 310 and the second type of test electrode 320 can adopt roller electrodes, that is, the first type of test electrode 310 and the second type of test electrode 320 can make rolling contact on the surface of the ingot 30, so as to change the contact positions of the first type of test electrode 310 and the second type of test electrode 320 to detect multiple positions of the height of the ingot 30.

[0055] Specifically, the first type of test electrode 310 and the second type of test electrode 320 are respectively arranged on opposite sides of the measuring cylinder 360, and the corresponding two electrode driving devices 370 are also correspondingly arranged on opposite sides of the measuring cylinder 360. Corresponding guide grooves 361 are provided on opposite sides of the measuring cylinder 360, and the first type of test electrode 310 and the second type of test electrode 320 can be embedded in the guide grooves 361 to contact the ingot 30.

[0056] The electrode driving device 370 specifically includes: a guide rod 371, a sliding table 372, a driving belt 373, a driving pulley 374, an electrode driving motor 376, etc. Among them, the guide rod 371 is fixed inside the main chassis 350, the guide rod 371 extends along the length direction of the ingot 30 (that is, the height direction of the detection device 300), and the sliding table 372 is slidably connected with the guide rod 371; the first type of test electrode 310 or the second type of test electrode 320 is respectively rotatably connected with the corresponding sliding table 372.

[0057] It should be noted that the first type of test electrode 310 or the second type of test electrode 320 can be electrically connected to the electrical parameter test device or other external devices through a flexible wire or the like.

[0058] The sliding table 372 is fixed to the fixed position of the driving belt 373. The wheel seat 375 is fixed inside the main chassis 350. The driving pulley 374 is rotationally connected to the wheel seat 375. The driving belt 373 is sleeved on the driving pulley 374, so that the rotation of the driving pulley 374 drives the belt to generate displacement. The motor shaft of the electrode driving motor 376 is rotationally locked with the driving pulley 374 to drive the driving pulley 374 to rotate.

[0059] With the above solution, the first type of test electrode 310 or the second type of test electrode 320 can be moved to different positions to contact different positions of the ingot 30, thus replacing the solution of arranging test electrodes at multiple positions in the previous solution.

[0060] As a more specific solution, the first type of test electrode 310 and the second type of test electrode 320 can be lifted and lowered synchronously, that is, the ingot 30 is detected in a symmetric mode at this time. The first type of test electrode 310 and the second type of test electrode 320 can also be lifted and lowered asynchronously, that is, the first type of test electrode 310 and the second type of test electrode 320 can contact different heights of the ingot 30 at this time, so as to detect the potential and the like at different positions.

[0061] The first conductive electrode 330 (not shown in the figure) and the second conductive electrode 340 (not shown in the figure) in this solution can refer to the previous solution.

[0062] Refer to Figures 5 to 14 As shown, although the detection device 300 can detect the preset position of the ingot 30 by changing the positions of the first type of test electrode 310 and the second type of test electrode 320 through the electrode driving device 370, due to the positioning accuracy of the electrode driving electrode and the driving pulley 374, etc., the first type of test electrode 310 and the second type of test electrode 320 cannot actually detect any height position of the ingot 30. Therefore, the detection device 300 is provided with a supplementary driving device 380 to drive the ingot 30 to perform linear motion so as to increase the detection accuracy.

[0063] Specifically, the supplementary driving device 380 includes: a base 381, a guide post 382, a base 383, a driving gear 385, a driven gear 386, and a supplementary driving motor 387.

[0064] Among them, the base 381 is used to carry the measuring cylinder 360, that is, the measuring cylinder 360 will move up and down synchronously with the base 381. In order to guide the movement of the base 381, the guide post 382 is fixedly arranged inside the main chassis 350. The base 381 is provided with a guide hole (not marked in the figure) for the guide post 382 to pass through. Through the cooperation of the guide post 382 and the guide hole, the base 381 can slide up and down inside the main chassis 350.

[0065] Refer to Figures 8 to 1As shown, the height-adjusting cam 384 is disposed below the base 381 and contacts the bottom of the base 381. The height-adjusting cam 384 is rotatably connected to the fixedly arranged base 383; the height-adjusting cam 384 has a continuously varying rim so that when the height-adjusting cam 384 rotates, the base 381 in contact therewith can continuously rise or fall. The driving gear 385 is non-rotatably connected to the motor shaft of the supplementary driving motor 387, that is, the supplementary driving motor 387 can drive the driving gear 385 to rotate; the driven gear 386 is non-rotatably connected to the height-adjusting cam 384, that is, the driven gear 386 and the height-adjusting cam 384 can rotate synchronously; the driving gear 385 meshes with the driven gear 386, so that when the electrode driving motor 376 rotates, the height-adjusting cam 384 is driven to rotate, and finally the height adjustment of the ingot 30 in the measuring cylinder 360 is realized. In this way, by controlling the supplementary driving motor 387, the problem of insufficient accuracy of the motor driving device can be compensated. Through the driving of the electrode driving device 370 and the supplementary driving device 380, high-precision positioning can be achieved, so as to detect the ingot 30 more precisely.

[0066] When controlling, the supplementary driving device 380 can also be made to operate alone to lift and lower within a small range, without having to use the electrode driving device 370 for driving. The above description is only some preferred embodiments of the present disclosure and an explanation of the applied technical principles. Those skilled in the art should understand that the scope of the invention involved in the embodiments of the present disclosure is not limited to the technical solutions formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above inventive concept. For example, the technical solutions formed by mutually replacing the above features with the (but not limited to) technical features having similar functions disclosed in the embodiments of the present disclosure.

Claims

1. A semiconductor ingot detection device, characterized in that: The semiconductor ingot detection equipment comprises: A first type of test electrode is used to make contact with the crystal ingot on one side of the crystal ingot; The second type of test electrode is used to release the ingot from the other side of the ingot; The electrical parameter testing device is electrically connected to the first type of testing electrodes and the second type of testing electrodes respectively so that the electrical parameter testing device can detect the voltage or current between the first type of testing electrodes and the second type of testing electrodes.

2. The semiconductor ingot detection device according to claim 1, characterized in that: The semiconductor ingot detection equipment also includes: a first conductive electrode for contacting the ingot at one end of the ingot; a second conductive electrode for contacting the ingot at the other end of the ingot; The first conductive electrode and the second conductive electrode are respectively electrically connected to the electrical parameter testing device so that the current provided by the electrical parameter testing device passes through the crystal ingot.

3. The semiconductor ingot detection device according to claim 2, characterized in that: in, The semiconductor ingot detection equipment includes a plurality of the first-type test electrodes and a plurality of the second-type test electrodes; the first-type test electrodes and the second-type test electrodes are arranged correspondingly.

4. The semiconductor ingot detection device according to claim 3, characterized in that: in, A plurality of the first-type test electrodes are spaced a certain distance apart in the length direction of the crystal ingot; a plurality of the second-type test electrodes are spaced a certain distance apart in the length direction of the crystal ingot.

5. The semiconductor ingot detection device according to claim 4, characterized in that: in, The spacing between the plurality of the first-type test electrodes in the length direction of the crystal ingot is equal; the spacing between the plurality of the second-type test electrodes in the length direction of the crystal ingot is equal.

6. The semiconductor ingot detection device according to claim 5, characterized in that: in, The spacing between the plurality of first-type test electrodes in the length direction of the ingot is equal to the spacing between the plurality of second-type test electrodes in the length direction of the ingot.

7. The semiconductor ingot detection device according to any one of claims 1 to 6, characterized in that: The semiconductor ingot detection equipment also includes: A measuring cylinder is used to form a cylinder space for placing the crystal ingot; Wherein, the first type of test electrodes and the second type of test electrodes are detachably mounted on the side wall of the measuring cylinder.

8. The semiconductor ingot detection device according to any one of claims 1 to 6, characterized in that: The semiconductor ingot detection equipment also includes: A measuring cylinder is used to form a cylinder space for placing the crystal ingot; The electrode driving device is used to drive the first type of test electrodes and the second type of test electrodes to move along the length direction of the ingot.

9. The semiconductor ingot detection device according to claim 8, characterized in that: The semiconductor ingot detection equipment also includes: The compensation driving device is used to drive the measuring cylinder to move along the length direction of the ingot.

10. The semiconductor ingot detection device according to claim 9, characterized in that: The test electrodes of the first type and the test electrodes of the second type are designed as roller electrodes.

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