Distance measurement method, distance measurement system, and substrate processing apparatus

Abstract

The present disclosure relates to a distance measurement method, a distance measurement system, and a substrate processing apparatus, which appropriately measure a distance from a substrate to a top surface in a processing container. The distance measurement method includes a heating step, a carrying-in step, and a measurement step. In the heating step, a processing container capable of accommodating a substrate is heated. In the loading step, a substrate-shaped jig is loaded into the processing container in a state where the processing container is heated. In the measurement step, the distance from the jig to the top surface in the processing container is measured by a distance sensor provided on the jig.

Description

Technical Field

[0001] The present disclosure relates to a distance measurement method, a distance measurement system, and a substrate processing apparatus. Background Art

[0002] Conventionally, as a technique for removing moisture remaining on the surface of a substrate while suppressing pattern collapse, a supercritical drying technique is known in which a supercritical fluid obtained in a high-temperature and high-pressure environment formed in a processing container is used to dry the substrate.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2022-121188 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The present disclosure provides a technique capable of appropriately measuring the distance from a substrate to the top surface inside a processing container.

[0008] Solutions to the Problems

[0009] A distance measurement method according to one aspect of the present disclosure includes a heating step, a loading step, and a measurement step. In the heating step, a processing container capable of accommodating a substrate is heated. In the loading step, a jig having the shape of a substrate is loaded into the processing container in a state where the processing container has been heated. In the measurement step, the distance from the jig to the top surface inside the processing container is measured by a distance sensor provided on the jig.

[0010] Effects of the Invention

[0011] According to the present disclosure, the distance from a substrate to the top surface inside a processing container can be appropriately measured. Brief Description of the Drawings

[0012] Figure 1 is a schematic cross-sectional view of a substrate processing system according to an embodiment as viewed from above.

[0013] Figure 2 is a schematic cross-sectional view of a substrate processing system according to an embodiment as viewed from the side.

[0014] Figure 3 is a flowchart showing a series of substrate processing procedures performed in a substrate processing system according to an embodiment.

[0015] Figure 4 is a diagram showing a structural example of a liquid processing unit.

[0016] Figure 5 It is a schematic cross-sectional view showing a structural example of a drying unit.

[0017] Figure 6 It is a schematic cross-sectional view showing an example of a state in which a wafer is housed inside a processing container.

[0018] Figure 7 It is a schematic top view showing the structure of a jig according to an embodiment.

[0019] Figure 8 It is a schematic cross-sectional view showing the structure of a jig according to an embodiment.

[0020] Figure 9 It is a diagram showing an example of a measurement operation using a jig according to an embodiment.

[0021] Figure 10 It is a diagram showing an example of a measurement operation using a jig according to an embodiment.

[0022] Figure 11 It is a diagram showing an example of a measurement operation using a jig according to an embodiment.

[0023] Figure 12 It is a diagram showing an example of a correction operation of a measurement value of a distance sensor according to an embodiment.

[0024] Figure 13 It is a diagram showing an example of a reading operation of reading a measurement value from a jig according to an embodiment.

[0025] Figure 14 It is a flowchart showing an example of a process flow of a distance measurement process according to an embodiment. Detailed Embodiments

[0026] Hereinafter, a mode (hereinafter referred to as “embodiment”) for implementing a distance measurement method, a distance measurement system, and a substrate processing apparatus according to the present disclosure will be described in detail with reference to the drawings. In addition, the present disclosure is not limited by this embodiment. In addition, the respective embodiments can be appropriately combined within a range where the processing contents do not conflict. In addition, in the following respective embodiments, the same reference numerals are assigned to the same parts, and redundant descriptions are omitted.

[0027] Conventionally, as a technique for removing moisture remaining on the surface of a substrate while suppressing pattern collapse, a supercritical drying technique is known in which a supercritical fluid obtained under a high-temperature and high-pressure environment formed inside a processing container is used to dry the substrate.

[0028] In addition, in the supercritical drying technique, if the distance from the substrate to the top surface inside the processing container deviates from an appropriate distance, the flow of the supercritical fluid between the substrate and the top surface inside the processing container becomes turbulent, and thus there is a risk of reduced efficiency in suppressing pattern collapse and removing moisture. Therefore, a technique for appropriately measuring the distance from the substrate to the top surface inside the processing container is expected to be realized.

[0029] 〔1. Structure of Substrate Processing System〕

[0030] First, with reference to Figure 1 and Figure 2 the structure of the substrate processing system (an example of a distance measurement system and a substrate processing apparatus) according to the embodiment will be described. Figure 1 is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from above. In addition, Figure 2 is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from the side. Furthermore, hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is set as the vertically upward direction.

[0031] As Figure 1 shown, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 is disposed adjacent to the processing station 3.

[0032] (Regarding the loading / unloading station 2)

[0033] The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C that horizontally accommodate a plurality of semiconductor wafers W (hereinafter referred to as "wafers W") are placed on the carrier placement unit 11. In addition, a jig 70 (refer to Figure 7 and Figure 8 ) can be accommodated in the carrier C.

[0034] The transfer unit 12 is disposed adjacent to the carrier placement unit 11. A transfer device 13 and a transfer section 14 are arranged inside the transfer unit 12.

[0035] The transfer device 13 includes a wafer holding mechanism for holding the wafer W. In addition, the transfer device 13 can move in the horizontal direction and the vertical direction and rotate about the vertical axis, and the transfer device 13 uses the wafer holding mechanism to transfer the wafer W between the carrier C and the transfer section 14.

[0036] (Regarding the processing station 3)

[0037] The processing station 3 is disposed adjacent to the transfer unit 12. The processing station 3 includes a transfer block 4 and a plurality of processing blocks 5.

[0038] (Regarding the transfer block 4)

[0039] The transfer block 4 includes a transfer area 15 and a transfer device 16. The transfer area 15 is, for example, a rectangular parallelepiped-shaped area extending along the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transfer device 16 is arranged in the transfer area 15.

[0040] The transfer device 16 includes a wafer holding mechanism for holding the wafer W. In addition, the transfer device 16 can move in the horizontal direction and the vertical direction and rotate about the vertical axis, and the transfer device 16 uses the wafer holding mechanism to transfer the wafer W between the transfer portion 14 and the plurality of processing blocks 5.

[0041] (Regarding the arrangement of the processing blocks 5)

[0042] The plurality of processing blocks 5 are arranged adjacent to the transfer area 15 on both sides of the transfer area 15. Specifically, the plurality of processing blocks 5 are arranged on one side (positive Y-axis direction side) and the other side (negative Y-axis direction side) of the transfer area 15 in the direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3.

[0043] In addition, as Figure 2 shown, the plurality of processing blocks 5 are arranged in multiple layers along the vertical direction. In the present embodiment, the number of layers of the plurality of processing blocks 5 is 3 layers, but the number of layers of the plurality of processing blocks 5 is not limited to 3 layers.

[0044] In this way, in the substrate processing system 1 according to the embodiment, the plurality of processing blocks 5 are arranged in multiple layers on both sides of the transfer block 4. Moreover, the transfer of the wafer W between the processing blocks 5 arranged in each layer and the transfer portion 14 is performed by one transfer device 16 arranged in the transfer block 4.

[0045] (Regarding the internal structure of the processing block 5)

[0046] Each processing block 5 includes a liquid processing unit 17, a drying unit 18, and a supply unit 19.

[0047] The liquid processing unit 17 performs a cleaning process of cleaning the upper surface of the wafer W serving as a pattern formation surface. In addition, the liquid processing unit 17 performs a liquid film formation process of forming a liquid film on the upper surface of the wafer W after the cleaning process. The structure of the liquid processing unit 17 will be described later.

[0048] The drying unit 18 performs a supercritical drying process on the wafer W after the liquid film formation process. Specifically, the drying unit 18 dries the wafer W by bringing the wafer W after the liquid film formation process into contact with a processing fluid in a supercritical state. The structure of the drying unit 18 will be described later.

[0049] The supply unit 19 supplies a processing fluid to the drying unit 18. Specifically, the supply unit 19 includes a supply equipment group including a flow meter, a flow regulator, a back pressure valve, a heater, etc., and a housing for housing the supply equipment group. In the present embodiment, the supply unit 19 supplies CO2 to the drying unit 18 as the processing fluid.

[0050] The liquid processing unit 17, the drying unit 18, and the supply unit 19 are arranged along the transfer area 15 (i.e., along the X-axis direction). Among the liquid processing unit 17, the drying unit 18, and the supply unit 19, the liquid processing unit 17 is arranged at the position closest to the loading / unloading station 2, and the supply unit 19 is arranged at the position farthest from the loading / unloading station 2.

[0051] In this way, each processing block 5 includes one liquid processing unit 17, one drying unit 18, and one supply unit 19 respectively. That is, the same number of liquid processing units 17, transfer devices 16, and supply units 19 are provided in the substrate processing system 1.

[0052] In addition, the drying unit 18 includes a processing area 181 for performing supercritical drying processing, and a transfer area 182 for performing the transfer of the wafer W between the transfer block 4 and the processing area 181. These processing area 181 and transfer area 182 are arranged along the transfer area 15.

[0053] Specifically, among the processing area 181 and the transfer area 182, the transfer area 182 is arranged on the side closer to the liquid processing unit 17 than the processing area 181. That is, in each processing block 5, the liquid processing unit 17, the transfer area 182, the processing area 181, and the supply unit 19 are arranged in sequence along the transfer area 15.

[0054] (Regarding the control device 6)

[0055] The substrate processing system 1 includes a control device 6. The control device 6 is, for example, a computer, and includes a control unit 61 and a storage unit 62.

[0056] The control unit 61 includes a microcomputer, various circuits having a CPU (Central Processing Unit), a ROM (ReadOnly Memory), a RAM (Random Access Memory), input / output ports, etc. The CPU of this microcomputer reads and executes the program stored in the ROM to implement the control of the transfer devices 13, 16, the liquid processing unit 17, the drying unit 18, the supply unit 19, etc.

[0057] In addition, the program can also be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 62 of the control device 6. Examples of computer-readable recording media include hard disks (HD), floppy disks (FD), optical discs (CD), magneto-optical discs (MO), memory cards, and the like.

[0058] The storage unit 62 is implemented, for example, by semiconductor memory elements such as RAM and flash memory, or storage devices such as hard disks and optical discs.

[0059] 〔2. Process Flow of Substrate Processing〕

[0060] Next, with reference to Figure 3 a series of substrate processing processes in the above-described substrate processing system 1 will be described. Figure 3 is a flowchart showing a series of substrate processing processes executed in the substrate processing system 1 according to the embodiment. In addition, Figure 3 the series of substrate processing shown is executed under the control of the control unit 61.

[0061] As Figure 3 shown, in the substrate processing system 1, first, a loading process (step S101) is performed. In the loading process, the transfer device 13 (refer to Figure 1 ) takes out the wafer W from the carrier C and places it on the transfer section 14. Next, the transfer device 16 (refer to Figure 1 ) takes out the wafer W from the transfer section 14 and loads it into the liquid processing unit 17.

[0062] Next, in the substrate processing system 1, a cleaning process (step S102) is performed in the liquid processing unit 17. The liquid processing unit 17 supplies various processing liquids to the upper surface of the wafer W, which is the pattern formation surface, to remove particles, natural oxide films, etc. from the upper surface of the wafer W.

[0063] Next, in the substrate processing system 1, a liquid film forming process (step S103) is performed in the liquid processing unit 17. The liquid processing unit 17 supplies liquid IPA (hereinafter referred to as "IPA liquid") to the upper surface of the wafer W after the cleaning process to form a liquid film based on the IPA liquid on the upper surface of the wafer W.

[0064] The wafer W after the liquid film forming process is transferred by the transfer device 16 to the transfer area 182 of the drying unit 18 disposed in the same processing block 5. The wafer W after the liquid film forming process transferred to the transfer area 182 is transferred from the transfer area 182 to the processing area 181.

[0065] Thereafter, in the substrate processing system 1, supercritical drying processing is performed in the processing area 181 (step S104). In the supercritical drying processing, the drying unit 18 dries the wafer W after the liquid film forming processing by bringing the wafer W after the liquid film forming processing into contact with a processing fluid in a supercritical state.

[0066] Next, in the substrate processing system 1, unloading processing is performed (step S105). In the unloading processing, first, the wafer W after the supercritical drying processing is transported from the processing area 181 to the transfer area 182. Thereafter, the transfer device 16 takes out the wafer W after the supercritical drying processing from the transfer area 182 and transports it to the transfer portion 14. Thereafter, the transfer device 13 takes out the wafer W after the supercritical drying processing from the transfer portion 14 and transports it to the carrier C. When the unloading processing is completed, a series of substrate processing for one wafer W is completed.

[0067] 〔3. Structure of the liquid processing unit〕

[0068] Next, with reference to Figure 4 the structure of the liquid processing unit 17 will be described. Figure 4 FIG. is a diagram showing a structural example of the liquid processing unit 17. The liquid processing unit 17 is configured as, for example, a single-wafer cleaning device that cleans the wafer W one by one by rotational cleaning.

[0069] As Figure 4 shown, the liquid processing unit 17 holds the wafer W substantially horizontally by a wafer holding mechanism 25 disposed in an outer chamber 23 that forms a processing space, and rotates the wafer W by rotating the wafer holding mechanism 25 about a vertical axis. Further, the liquid processing unit 17 moves the nozzle arm 26 above the rotating wafer W, and performs a cleaning process on the upper surface of the wafer W by supplying a chemical solution and a rinsing solution in a predetermined order from a chemical solution nozzle 26a provided at the tip of the nozzle arm 26.

[0070] In addition, in the liquid processing unit 17, a chemical solution supply path 25a is also formed inside the wafer holding mechanism 25. Further, the lower surface of the wafer W is also cleaned using the chemical solution and the rinsing solution supplied from the chemical solution supply path 25a.

[0071] In the cleaning process, for example, first, particles and organic contaminants are removed using SC1 solution (a mixed solution of ammonia and hydrogen peroxide water), which is an alkaline chemical solution. Next, rinsing is performed using deionized water (hereinafter referred to as "DIW") as a rinsing solution. Next, the native oxide film is removed using a diluted hydrofluoric acid aqueous solution (hereinafter referred to as "DHF"), which is an acidic chemical solution. Next, rinsing is performed using DIW.

[0072] The various liquid medicines described above are received by the outer chamber 23 and the inner cup 24 disposed in the outer chamber 23, and are discharged from the liquid discharge port 23a provided at the bottom of the outer chamber 23 and the liquid discharge port 24a provided at the bottom of the inner cup 24. Further, the atmosphere inside the outer chamber 23 is discharged from the exhaust port 23b provided at the bottom of the outer chamber 23.

[0073] After the rinsing process in the cleaning process, a liquid film forming process is performed. Specifically, the liquid processing unit 17 supplies IPA liquid to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25. Thereby, the DIW remaining on the two surfaces of the wafer W is replaced with IPA. After that, the liquid processing unit 17 slowly stops the rotation of the wafer holding mechanism 25.

[0074] The wafer W that has completed the liquid film forming process is in a state where a liquid film of IPA liquid is formed on its upper surface, and is transferred to the transfer device 16 by an unillustrated transfer mechanism provided in the wafer holding mechanism 25, and is carried out from the liquid processing unit 17. The liquid film formed on the wafer W prevents pattern collapse due to evaporation (vaporization) of the liquid on the upper surface of the wafer W during the process of transferring the wafer W from the liquid processing unit 17 to the drying unit 18 and during the loading operation into the drying unit 18.

[0075] 〔4. Structure of Drying Unit〕

[0076] Next, with reference to Figure 5 and Figure 6 the structure of the drying unit 18 will be described. Figure 5 is a schematic cross-sectional view showing a structural example of the drying unit 18. In addition, Figure 6 is a schematic cross-sectional view showing an example of a state in which the wafer W is accommodated inside the processing container.

[0077] As Figure 5 shown, the drying unit 18 includes a processing container 31, a lid 32, and a holding unit 33.

[0078] The processing container 31 is, for example, a pressure vessel capable of forming a high-pressure environment of about 16 MPa to 20 MPa. The processing container 31 is disposed in the processing area 181 (refer to Figure 1 ), and the supercritical drying process is performed in the processing space 311 inside the processing container 31. An opening 312 that communicates between the processing space 311 and the transfer area 182 (refer to Figure 1 ) is formed on the side surface of the processing container 31 facing the transfer area 182.

[0079] The lid 32 is connected to the moving mechanism 321 and horizontally moves between the processing area 181 and the transfer area 182 by this moving mechanism 321. Thereby, the lid 32 opens and closes the opening 312 of the processing container 31.

[0080] The holding part 33 holds the wafer W in the horizontal direction. The holding part 33 is, for example, a box-shaped body with a rectangular shape in plan view, and holds the wafer W by supporting the outer peripheral part of the wafer W from below. The holding part 33 is fixed to the lid body 32.

[0081] The holding part 33 is moved into the inside of the processing space 311 together with the lid body 32 by using the moving mechanism 321, and is thus housed inside the processing space 311. The wafer W held by the holding part 33 is housed inside the processing space 311 by the holding part 33, and is carried into the inside of the processing space 311.

[0082] A supply part 35 and a discharge part 37 are provided in the processing container 31. The supply part 35 is connected to the supply device group of the supply unit 19 (refer to Figure 1 ) and supplies the processing fluid supplied from the supply unit 19 to the processing space 311. The discharge part 37 discharges the processing fluid from the processing space 311.

[0083] The supply part 35 is provided on the side surface of the processing container 31 on the side opposite to the side where the opening 312 forming the processing space 311 is located. The supply part 35 supplies the processing fluid to the processing space 311 in the horizontal direction from a supply port that opens laterally.

[0084] The discharge part 37 is provided on the bottom surface of the processing space 311 in the processing container 31. The discharge part 37 discharges the processing fluid from a discharge port that opens upward.

[0085] The drying unit 18 supplies the processing fluid from the supply part 35 to the processing space 311 and discharges the processing fluid in the processing space 311 via the discharge part 37. A regulator (damper) for adjusting the discharge amount of the processing fluid discharged from the processing space 311 is provided in the discharge path of the processing fluid, and the discharge amount of the processing fluid is adjusted by the regulator so as to adjust the pressure in the processing space 311 to a desired pressure. Thereby, the supercritical state of the processing fluid is maintained in the processing space 311. Hereinafter, the processing fluid in the supercritical state is sometimes referred to as "supercritical fluid".

[0086] The processing container 31 includes a first protruding part 313 and a second protruding part 314 that protrude toward the lid opening direction side of the opening 312 from the opening 312. The first protruding part 313 protrudes in the X-axis direction from the lower part of the opening 312, and the second protruding part 314 protrudes in the X-axis direction from the upper part of the opening 312.

[0087] A first through-hole 315 that connects the upper surface and the lower surface of the first protrusion 313 is formed in the first protrusion 313. Further, in the second protrusion 314, a second through-hole 316 that connects the upper surface and the lower surface of the second protrusion 314 is formed at a position vertically facing the first through-hole 315 (i.e., above the first through-hole 315).

[0088] Further, the drying unit 18 includes a locking member 42. The locking member 42 passes through the first through-hole 315 formed in the first protrusion 313. The locking member 42 is connected to a lifting mechanism 43 that moves the locking member 42 in the vertical direction.

[0089] Further, the drying unit 18 includes a temperature sensor 52 and a plurality (two in this case) of heaters 51. The heaters 51 are arranged so as to sandwich the processing space 311 of the processing container 31 vertically, and heat the processing space 311 according to the control of the control unit 61. The temperature sensor 52 measures the temperature of the processing space 311 of the processing container 31 and outputs the measurement result to the control unit 61.

[0090] In this drying unit 18, first, a wafer W is carried in. In the carry-in process, the drying unit 18 horizontally moves the lid 32 in the positive X-axis direction by the moving mechanism 321. As a result, the wafer W held by the holding unit 33 is accommodated in the processing space 311 of the processing container 31, and the processing space 311 is in a state sealed by the lid 32 (see Figure 6 ).

[0091] Further, the drying unit 18 raises the locking member 42 by using the lifting mechanism 43 so that the locking member 42 passes through the second through-hole 316 formed in the second protrusion 314.

[0092] The locking member 42 presses the lid 32 toward the processing space 311 against the internal pressure caused by the processing fluid supplied to the processing space 311. Thereby, the state in which the processing space 311 is sealed by the lid 32 can be maintained.

[0093] Next, a pressure boosting process is performed in the drying unit 18. In the pressure boosting process, the drying unit 18 increases the pressure of the processing space 311 by supplying a processing fluid from the supply unit 35 to the processing space 311 of the processing container 31. As a result, the pressure of the processing space 311 increases from atmospheric pressure to the processing pressure. The processing pressure is a pressure that exceeds the critical pressure (approximately 7.2 MPa) at which CO2, which is the processing fluid, becomes a supercritical state, for example, about 16 MPa. Through the pressure boosting process, the processing fluid in the processing space 311 undergoes a phase change to a supercritical state, and the IPA liquid contained (Japanese: 液盛り) on the surface of the wafer W begins to dissolve into the processing fluid in the supercritical state. In addition, the processing fluid supplied from the supply unit 19 may be in a supercritical state or in a liquid state.

[0094] Next, the flow process is performed in the drying unit 18. In the flow process, the drying unit 18 keeps the pressure of the processing space 311 at the processing pressure, supplies the heated processing fluid from the supply unit 35 to the processing space 311, and discharges the processing fluid supplied to the processing space to the outside of the processing space 311 from the discharge unit 37. Thus, a laminar flow of the processing fluid flowing in a predetermined direction around the wafer W is formed in the processing space 311. In addition, the processing space 311 is heated to a predetermined temperature by the heated processing fluid.

[0095] The IPA liquid on the pattern forming surface (upper surface) of the wafer W gradually dissolves into the supercritical fluid due to contact with the supercritical fluid under high pressure (e.g., 16 MPa), and is eventually replaced by the supercritical fluid. As a result, the gaps between the patterns are filled with the supercritical fluid.

[0096] Next, a decompression process is performed in the drying unit 18. In the decompression process, the drying unit 18 reduces the pressure of the processing space 311 from a high pressure state to atmospheric pressure. As a result, the supercritical fluid that fills the gaps between the patterns changes to a normal, i.e., gaseous, processing fluid. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0097] Here, it is assumed that IPA liquid is used as the anti-drying liquid and CO2 is used as the processing fluid, but liquids other than IPA can also be used as the anti-drying liquid, and fluids other than CO2 can also be used as the processing fluid.

[0098] In addition, in the supercritical drying process, if the distance from the wafer W to the top surface 317 in the processing container 31 deviates from the appropriate distance, the flow of the supercritical fluid between the wafer W and the top surface 317 becomes disordered, so the efficiency of suppressing pattern collapse and removing moisture decreases. For example, sometimes the distance from the wafer W to the top surface 317 in the processing container 31 changes from the appropriate distance due to the thermal deformation of the processing container 31. Therefore, a technique for appropriately measuring the distance from the wafer W to the top surface 317 in the processing container 31 is desired.

[0099] Therefore, in the substrate processing system 1 according to the embodiment, a substrate-shaped jig 70 is loaded into the processing container 31 in a state where the processing container 31 is heated, and the distance from the jig 70 to the top surface in the processing container 31 is measured by a distance sensor provided in the jig 70.

[0100] Thereby, it is possible to measure the distance from the jig 70 to the top surface 317 in the processing container 31 taking into account the thermal deformation of the processing container 31. Since the jig 70 has substantially the same shape as the wafer W which is a product substrate, the distance from the jig 70 to the top surface 317 in the processing container 31 can be regarded as the distance from the wafer W to the top surface 317 in the processing container 31. Therefore, according to the substrate processing system 1 according to the embodiment, the distance from the wafer W to the top surface 317 in the processing container 31 can be appropriately measured.

[0101] 〔5. Structure of the jig〕

[0102] Next, the structure of the jig 70 will be described with reference to Figure 7 and Figure 8 FIG. Figure 7 FIG. 18 is a schematic plan view showing the structure of the jig 70 according to the embodiment. Figure 8 FIG. 20 is a schematic cross-sectional view showing the structure of the jig 70 according to the embodiment.

[0103] As shown in Figure 7 and Figure 8 FIGS. 18 and 20, the jig 70 includes a base substrate 71, a distance sensor 72, a temperature sensor 73, a control circuit 74, a memory 75, a read-in pad 76, a storage battery 77, a charging pad 78, and a cover 79. In addition, in Figure 7 FIG. 18, the cover 79 is omitted for ease of explanation.

[0104] The base substrate 71 has substantially the same shape as the wafer W which is the product substrate. The base substrate 71 is, for example, in the shape of a circular plate with a diameter of about 300 mm. However, the base substrate 71 may also have dimensions other than the above-mentioned dimensions. Examples of the material of the base substrate 71 include silicon, carbon fiber, quartz glass, silicon carbide, silicon nitride, alumina, etc. The distance sensor 72 is buried inside the base substrate 71, and the temperature sensor 73, the control circuit 74, the memory 75, the read-in pad 76, the storage battery 77, and the charging pad 78 are mounted on the surface of the base substrate 71. The distance sensor 72, the temperature sensor 73, the control circuit 74, the memory 75, the read-in pad 76, the storage battery 77, and the charging pad 78 are appropriately connected through wirings formed inside the base substrate 71.

[0105] The distance sensor 72 measures the distance to the measurement object. In the embodiment, the measurement object is the top surface 317 inside the processing container 31. The distance sensor 72 is, for example, a capacitance sensor, and measures the capacitance corresponding to the distance from the jig 70 to the top surface 317 inside the processing container 31. In addition, the distance sensor 72 is not limited to a capacitance sensor, and any sensor that can measure a physical quantity that changes corresponding to the distance to the measurement object can be used, and it can also be a sensor of other types (for example, a laser distance sensor, an ultrasonic sensor, etc.). The distance sensor 72 is, for example, arranged at a plurality of positions on the surface of the base substrate 71, and the distances to the measurement object are measured at these plurality of positions respectively. In the embodiment, the distance sensor 72 is arranged at the position of the central part of the base substrate 71 and the position of the peripheral part of the base substrate 71. The number of the distance sensors 72 can be set to about 13, for example.

[0106] The temperature sensor 73 measures the temperature of the jig 70.

[0107] The control circuit 74 is a circuit that controls each part of the jig 70. For example, the control circuit 74 controls the distance sensor 72 to measure the distance from the jig 70 to the top surface 317 inside the processing container 31, and stores the measured value of the measured distance in the memory 75. In addition, for example, the control circuit 74 uses the temperature sensor 73 to control the timing of performing the distance measurement by the distance sensor 72.

[0108] The memory 75 stores the measured value of the distance from the jig 70 to the top surface 317 inside the processing container 31 measured by the distance sensor 72. The read-in pad 76 is connected to the memory 75 and is an interface for reading the measured value from the memory 75. The read-in pad 76 contacts the read-in pin 94 of the read-in container 90 described later when reading the measured value from the memory 75.

[0109] The storage battery 77 supplies power to the distance sensor 72, the temperature sensor 73, the control circuit 74, etc. The storage battery 77 is configured to be mounted in a manner that enables attachment and detachment to a connector (not shown) on the surface of the base substrate 71, and can be replaced as needed. The charging pad 78 is connected to the storage battery 77 and is an interface for charging the storage battery 77. The charging pad 78 contacts a charging pin 96 of a later-described reading container 90 when charging the storage battery 77.

[0110] The cover 79 covers the temperature sensor 73, the control circuit 74, the memory 75, and the storage battery 77 mounted on the surface of the base substrate 71. In the cover 79, openings 79a are formed at positions corresponding to the reading pad 76 and the charging pad 78, and the reading pad 76 and the charging pad 78 are exposed from the openings 79a.

[0111] 〔6. Measurement operation〕

[0112] Here, with reference to Figures 9 - 11 the measurement operation using the jig 70 will be described. Figures 9 - 11 FIG. is an example showing a measurement operation using the jig 70 according to the embodiment.

[0113] The drying unit 18, for example, as Figure 9 shown, heats the processing space 311 of the processing container 31 by the heater 51. At this time, the holding part 33 is housed in the processing space 311 and the processing space 311 is in a state sealed by the lid 32. The processing container 31 and the holding part 33 undergo thermal deformation due to the heat from the heater 51. The control unit 61 acquires the temperature of the processing space 311 of the processing container 31 from the temperature sensor 52.

[0114] Moreover, when the temperature of the processing space 311 of the processing container 31 reaches a predetermined set temperature, the jig 70 is carried into the drying unit 18. The set temperature is, for example, the assumed temperature of the processing space 311 when the heated processing fluid is supplied from the supply unit 35 to the processing space 311. This set temperature is obtained through experiments, etc., and stored in the storage unit 62, etc. In the carrying-in process of the jig 70, the drying unit 18, for example, as Figure 10As shown, the cover 32 is horizontally moved in the negative X-axis direction by the moving mechanism 321. Thus, the holding part 33 moves from the processing area 181 to the transfer area 182 together with the cover 32. The jig 70 is taken out from the carrier C by the transfer device 13 and transferred to the transfer part 14, transferred from the transfer part 14 to the transfer area 182 by the transfer device 16, and handed over to the holding part 33 by the transfer device 16 in the transfer area 182. Then, the drying unit 18 horizontally moves the cover 32 in the positive X-axis direction by the moving mechanism 321. Thus, the jig 70 held by the holding part 33 is carried into the processing space 311 of the processing container 31, and the processing space 311 becomes a state sealed by the cover 32. The jig 70 receives heat from the heater 51 in the sealed processing space 311. Thus, the temperature of the jig 70 rises.

[0115] Next, the control circuit 74 of the jig 70 acquires the temperature of the jig 70 from the temperature sensor 73. Moreover, when the temperature of the jig 70 reaches the above-mentioned set temperature, the control circuit 74, for example, as Figure 11 shown, measures the distance d from the jig 70 to the top surface 317 in the processing container 31 by the distance sensor 72. Moreover, the control circuit 74 stores the measured value of the distance d of the distance sensor 72 in the memory 75.

[0116] In this way, in the substrate processing system 1 according to the embodiment, the substrate-shaped jig 70 is carried into the processing container 31 in a state where the processing container 31 is heated, and the distance d from the jig 70 to the top surface 317 in the processing container 31 is measured by the distance sensor 72 in a state where the jig 70 is heated.

[0117] Thereby, it is possible to measure the distance from the jig 70 to the top surface 317 in the processing container 31 while taking into account the thermal deformation of the processing container 31 and the jig 70. Since the jig 70 has substantially the same shape as the wafer W which is a product substrate, the distance from the jig 70 to the top surface 317 in the processing container 31 can be regarded as the distance from the wafer W to the top surface 317 in the processing container 31. Therefore, according to the substrate processing system 1 according to the embodiment, it is possible to appropriately measure the distance from the wafer W to the top surface 317 in the processing container 31 while taking into account the thermal deformation of the processing container 31 and the wafer W.

[0118] 〔7. Calibration operation〕

[0119] Here, when the distance sensor 72 is a capacitance sensor, due to aging changes, there may be a deviation between the capacitance corresponding to the distance from the jig 70 to the top surface 317 in the processing container 31 measured by the distance sensor 72 and the capacitance corresponding to the actual distance.

[0120] Therefore, in an embodiment, before the measurement operation using the jig 70 starts, the measured value of the distance sensor 72 is corrected.

[0121] Refer to Figure 12 to describe the correction operation of the measured value of the distance sensor 72. Figure 12 FIG. is a diagram showing an example of the correction operation of the measured value of the distance sensor 72 according to the embodiment.

[0122] First, before the measurement operation using the jig 70 starts, for example, as Figure 12 shown, the jig 70 is housed in the calibration container 80. The calibration container 80 has an internal space 81 capable of housing the jig 70. The calibration container 80 has a circular shape in plan view and has an opening 81a on the side surface of the calibration container 80. The jig 70 is carried into the internal space 81 of the calibration container 80 from the opening 81a and placed on the support 82 provided on the bottom surface of the internal space 81. The distance from the jig 70 housed in the calibration container 80 to the top surface 811 of the internal space 81 is a predetermined reference distance d0. The reference distance d0 is, for example, the distance at which a laminar flow of the processing fluid that would be formed around the jig 70 in a predetermined orientation is formed when it is assumed that the same heated processing fluid as the processing fluid of the drying unit 18 is supplied to the internal space 81, and the reference distance d0 is obtained through experiments or the like.

[0123] When the jig 70 is housed in the calibration container 80, the control circuit 74 of the jig 70 measures the distance from the jig 70 to the top surface 811 in the calibration container 80 through the distance sensor 72. Moreover, when the difference between the capacitance corresponding to the distance from the jig 70 to the top surface 811 in the calibration container 80 measured by the distance sensor 72 and the capacitance corresponding to the reference distance d0 deviates from the allowable range, the control circuit 74 corrects the capacitance measured by the distance sensor 72. That is, the control circuit 74 corrects the capacitance measured by the distance sensor 72 to the capacitance corresponding to the reference distance d0. Thereby, it is possible to suppress the malfunction of the distance sensor 72 due to aging.

[0124] 〔8. Reading operation〕

[0125] Next, refer to Figure 13 to describe the reading operation of reading the measured value from the jig 70. Figure 13 FIG. is a diagram showing an example of the reading operation of reading the measured value from the jig 70 according to the embodiment.

[0126] After the measurement operation using the jig 70 ends, for example, as Figure 13As shown, the jig 70 is housed in a reading container 90 (an example of a housing container). The reading container 90 has a box-shaped container body 91 that opens upward and a lid member 92. An internal space capable of housing the jig 70 is formed by combining the lid member 92 with the container body 91. The jig 70 is placed on the bottom surface of the container body 91. Then, the opening of the container body 91 is blocked by the lid member 92, whereby the jig 70 is housed in the internal space.

[0127] A reading connector 93 (an example of a first connector) and a reading pin 94 (an example of a first pin) are provided on the lid member 92. The reading connector 93 is an interface for reading measurement values from the memory 75 of the jig 70. When reading measurement values from the memory 75, the reading connector 93 is connected to a reading device such as an information processing device, for example. The reading pin 94 is electrically connected to the reading connector 93. The reading pin 94 contacts the reading pad 76 of the jig 70 housed in the reading container 90. Thereby, the reading device connected to the reading connector 93 can read the measurement values from the memory 75 to the reading device via the reading pad 76 and the reading pin 94.

[0128] In addition, a charging connector 95 (an example of a second connector) and a charging pin 96 (an example of a second pin) are provided on the lid member 92. The charging connector 95 is an interface for charging the storage battery 77 of the jig 70. When charging the storage battery 77, the charging connector 95 is connected to an external power source such as a charger, for example. The charging pin 96 is electrically connected to the charging connector 95. The charging pin 96 contacts the charging pad 78 of the jig 70 housed in the reading container 90. Thereby, the external power source connected to the charging connector 95 can charge the storage battery 77 from the external power source via the charging pad 78 and the charging pin 96 in parallel with the reading of the measurement values to the reading device.

[0129] 〔9. Flow of distance measurement processing〕

[0130] Next, with reference to Figure 14 an example of the flow of the distance measurement processing according to the embodiment will be described. Figure 14 is a flowchart showing an example of the flow of the distance measurement processing according to the embodiment.

[0131] A user of the substrate processing system 1 houses the jig 70 in a calibration container 80 (step S201). The control circuit 74 of the jig 70 corrects the capacitance corresponding to the distance from the jig 70 to the top surface 811 in the calibration container 80, measured by the distance sensor 72, to the capacitance corresponding to the reference distance d0 (step S202). The calibrated jig 70 is housed in the carrier C.

[0132] The control unit 61 controls the transfer devices 13 and 16 to take out the jig 70 from the carrier C, and transfers the jig 70 to the transfer area 182 of the drying unit 18 via the transfer unit 14.

[0133] Next, the control unit 61 heats the processing space 311 of the processing container 31 by the heater 51 (step S203). Thereby, the temperature of the processing container 31 rises. In addition, the heating by the heater 51 continues until step S210 is completed.

[0134] Next, the control unit 61 acquires the temperature of the processing container 31 from the temperature sensor 52 (step S204). Moreover, the control unit 61 determines whether the temperature of the processing container 31 acquired in step S204 has reached the set temperature (step S205).

[0135] When the temperature of the processing container 31 has not reached the set temperature (step S205: "No"), the control unit 61 returns the process to step S204. On the other hand, when the temperature of the processing container 31 has reached the set temperature (step S205: "Yes"), the control unit 61 controls the transfer device 16, the moving mechanism 321, etc. to transfer the jig 70 into the processing container 31 from the transfer area 182 (step S206). Thereby, the temperature of the jig 70 rises.

[0136] Next, the control circuit 74 of the jig 70 acquires the temperature of the jig 70 from the temperature sensor 73 (step S207). Moreover, the control circuit 74 determines whether the temperature of the jig 70 acquired in step S207 has reached the set temperature (step S208).

[0137] When the temperature of the jig 70 has not reached the set temperature (step S208: "No"), the control circuit 74 returns the process to step S207. On the other hand, when the temperature of the jig 70 has reached the set temperature (step S208: "Yes"), the control circuit 74 measures the distance d from the jig 70 to the top surface 317 in the processing container 31 by the distance sensor 72 (step S209). Moreover, the control circuit 74 stores the measured value of the distance d of the distance sensor 72 in the memory 75 (step S210).

[0138] Next, the control unit 61 controls the transfer device 16, the moving mechanism 321, etc. to take out the jig 70 from the drying unit 18.

[0139] Next, the user of the substrate processing system 1 accommodates the jig 70 in the loading container 90 (step S211). The loading connector 93 of the loading container 90 is connected to the loading device. The loading device connected to the loading connector 93 reads the measured values from the memory 75 via the loading pads 76 and the loading pins 94 into the loading device (step S212). In addition, the charging connector 95 of the loading container 90 is connected to an external power supply. The external power supply connected to the charging connector 95 charges the storage battery 77 from the external power supply via the charging pads 78 and the charging pins 96 in parallel with the reading of the measured values into the loading device (step S212).

[0140] As described above, the distance measurement method according to the embodiment includes a heating process, a loading process, and a measurement process. In the heating process, a processing container (for example, the processing container 31) that can accommodate a substrate (for example, the wafer W) is heated. In the loading process, a jig having a substrate shape (for example, the jig 70) is loaded into the processing container in a state where the processing container is heated. In the measurement process, the distance (for example, the distance d) from the jig to the top surface (for example, the top surface 317) inside the processing container is measured by a distance sensor (for example, the distance sensor 72) provided on the jig.

[0141] Therefore, according to the distance measurement method according to the embodiment, the distance from the substrate to the top surface inside the processing container can be appropriately measured.

[0142] In the measurement process, it may also be that the distance from the jig to the top surface inside the processing container is measured by the distance sensor in a state where the jig loaded into the processing container is heated. Thereby, the distance from the substrate to the top surface inside the processing container can be appropriately measured while taking into account the thermal deformation of the processing container and the jig.

[0143] Alternatively, the distance sensor may be a capacitance sensor that measures the capacitance corresponding to the distance from the jig to the top surface inside the processing container. Thereby, measurement using a capacitance sensor having excellent heat resistance can be performed.

[0144] In the distance measurement method according to the embodiment, it is also possible that, before the measurement process, the jig is housed in a first housing container (e.g., calibration container 80) that can house the jig and has a reference distance (e.g., reference distance d0) that is pre-determined from the housed jig to the top surface (e.g., top surface 811). Moreover, in the distance measurement method according to the embodiment, it is also possible that the capacitance corresponding to the distance from the jig to the top surface in the first housing container measured by the distance sensor is corrected to the capacitance corresponding to the reference distance. Thereby, it is possible to suppress the malfunction of the distance sensor caused by aging changes.

[0145] In the measurement process, it is also possible that the measured value of the distance from the jig to the top surface in the processing container measured by the distance sensor is stored in a memory (e.g., memory 75) provided in the jig. Additionally, in the distance measurement method according to the embodiment, it is also possible that, after the measurement process, the jig is housed in a second housing container (e.g., reading container 90) that can house the jig and has a first connector (e.g., reading connector 93) for connecting to a reading device. Moreover, in the distance measurement method according to the embodiment, it is also possible that the measured value is read from the memory to the reading device with the jig housed in the second housing container. Specifically, the second housing container may also have a first pin that can contact a first pad (e.g., reading pad 76) provided on the housed jig, and the first pin is electrically connected to the first connector. Moreover, in the measured value reading process, it is also possible to read the measured value from the memory to the reading device via the first pad and the first pin. Thereby, it is possible to efficiently read the measured value to the reading device.

[0146] It is also possible that the second housing container has a second connector (charging connector 95) connected to an external power source. Additionally, in the distance measurement method according to the embodiment, it is also possible that the battery (e.g., battery 77) provided in the jig is charged from the external power source in parallel with the measured value reading process. Specifically, the second housing container may also have a second pin (e.g., charging pin 96) that can contact a second pad (e.g., charging pad 78) provided on the housed jig, and the second pin is electrically connected to the second connector. Moreover, in the charging process, it is also possible to charge the battery from the external power source via the second pad and the second pin. Thereby, it is possible to efficiently charge the battery.

[0147] The distance measurement system according to the embodiment (for example, the substrate processing system 1) includes a processing container (for example, the processing container 31), a jig (for example, the jig 70), and a storage container (for example, the loading container 90). The processing container can accommodate a substrate. The jig is a jig in the shape of a substrate that is carried into the processing container in a state where the processing container is heated, and the jig is provided with a distance sensor (for example, the distance sensor 72) for measuring the distance to the top surface (for example, the top surface 317) in the processing container, and a memory (for example, the memory 75) for storing the measurement value of the distance sensor. The storage container can accommodate the jig, and the storage container has a first connector (for example, the loading connector 93) for connecting to a reading device that reads the measurement value from the memory.

[0148] Therefore, according to the distance measurement system according to the embodiment, the distance from the substrate to the top surface in the processing container can be appropriately measured, and the reading of the measurement value to the reading device can be efficiently performed.

[0149] Alternatively, the storage container may have a second connector (for example, the charging connector 95) for connecting to an external power source that charges a storage battery (for example, the storage battery 77) provided in the jig. Thereby, the charging of the storage battery can be efficiently performed.

[0150] The substrate processing apparatus according to the embodiment (for example, the substrate processing system 1) includes a processing container (for example, the processing container 31), a transfer device (for example, the transfer device 16), and a control unit (for example, the control unit 61). The processing container can accommodate a substrate (for example, a wafer W). The transfer device transfers a jig in the shape of a substrate (for example, the jig 70) to an interface area (for example, the interface area 182) adjacent to the processing container. The control unit controls each part to execute a distance measurement method including a heating process, a loading process, and a measurement process. In the heating process, the processing container is heated. In the loading process, the jig is loaded into the processing container in a state where the processing container is heated. In the measurement process, the distance (for example, the distance d) from the jig to the top surface (for example, the top surface 317) in the processing container is measured by a distance sensor (for example, the distance sensor 72) provided in the jig.

[0151] Therefore, according to the substrate processing apparatus according to the embodiment, the distance from the substrate to the top surface in the processing container can be appropriately measured.

[0152] It should be considered that all points of the embodiments disclosed herein are illustrative rather than restrictive. In fact, the above embodiments can be specifically implemented in various ways. Additionally, the above embodiments can be omitted, replaced, and changed in various ways without departing from the appended claims and their gist.

[0153] Description of Reference Numerals

[0154] 1: Substrate processing system; 6: Control device; 16: Transfer device; 18: Drying unit; 31: Processing container; 51: Heater; 52: Temperature sensor; 61: Control unit; 62: Storage unit; 70: Fixture; 71: Base substrate; 72: Distance sensor; 73: Temperature sensor; 74: Control circuit; 75: Memory; 76: Read-in pad; 77: Storage battery; 78: Charging pad; 79: Cover; 80: Calibration container; 81: Internal space; 81a: Opening; 82: Support; 90: Read-in container; 91: Container body; 92: Cover member; 93: Read-in connector; 94: Read-in pin; 95: Charging connector; 96: Charging pin: 181: Processing area; 182: Handover area; 317, 811: Top surface; W: Wafer.

Claims

1. A distance measurement method, comprising: A heating step of heating a processing container capable of accommodating the substrate; A loading step of loading a substrate-shaped jig into the processing container in a state where the processing container is heated; as well as In the measuring step, a distance sensor provided on the jig is used to measure a distance from the jig to a top surface in the processing container.

2. The distance measurement method according to claim 1, wherein: In the measuring step, the distance from the jig to the top surface in the processing container is measured by the distance sensor in a state where the jig carried into the processing container is heated.

3. The distance measuring method according to claim 1, wherein: The distance sensor is a capacitance sensor that measures capacitance corresponding to the distance from the jig to the top surface in the processing container.

4. The distance measuring method according to claim 1, further comprising the following steps: a housing step of housing the jig in a first housing container capable of housing the jig and having a distance from the housed jig to the top surface being a predetermined reference distance before the measuring step; and The calibration step is to calibrate the electrostatic capacitance corresponding to the distance from the jig to the top surface in the first storage container, measured by the distance sensor, to the electrostatic capacitance corresponding to the reference distance.

5. The distance measuring method according to claim 1, wherein: In the measuring step, a measured value of the distance from the jig to the top surface in the processing container measured by the distance sensor is stored in a memory provided in the jig, The distance measuring method further comprises the following steps: a storage step of storing the jig in a second storage container capable of storing the jig and having a first connector for connecting to a reading device after the measuring step; as well as The measured value reading step reads the measured value from the memory into the reading device in a state where the jig is stored in the second storage container.

6. The distance measuring method according to claim 5, wherein: The second storage container has a first pin, the first pin can contact a first pad provided on the stored jig, and the first pin is electrically connected to the first connector. In the measurement value reading step, the measurement value is read from the memory to the reading device via the first pad and the first pin.

7. The distance measuring method according to claim 5, wherein: The second storage container has a second connector connected to an external power source. The distance measuring method further includes a charging step of charging a battery provided in the jig from the external power supply in parallel with the measurement value reading step.

8. The distance measuring method according to claim 7, wherein: The second storage container has a second pin, the second pin can contact a second pad provided on the stored jig, and the second pin is electrically connected to the second connector. In the charging step, the storage battery is charged from the external power source via the second pad and the second pin.

9. A distance measurement system comprising: a processing container capable of receiving a substrate; a jig in the shape of a substrate, which is carried into the processing container in a state where the processing container is heated, the jig being provided with a distance sensor for measuring the distance to the top surface in the processing container, and a memory for storing the measured value of the distance sensor; and A storage container capable of storing the jig has a first connector for connecting to a reading device for reading the measured value from the memory.

10. The distance measuring system according to claim 9, wherein: The storage container has a second connector for connecting to an external power source for charging the battery provided in the jig.

11. A substrate processing device comprising: a processing container capable of receiving a substrate; a conveying device that conveys a substrate-shaped fixture to a delivery area adjacent to the processing container; as well as Control Department, in, The control unit controls each unit to execute a distance measurement method, and the distance measurement method includes: A heating step of heating the processing container; A loading step of loading the jig from the delivery area into the processing container in a state where the processing container is heated; and In the measuring step, a distance sensor provided on the jig is used to measure a distance from the jig to a top surface in the processing container.

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