Wandering star wheel and manufacturing method thereof

Abstract

The invention provides a wandering star wheel. The wandering star wheel comprises a base material and a coating film. The base material comprises two opposite base material surfaces; the coating film is arranged on the surface of at least one base material, the coating film is a Si-doped coating film, and the Si doping amount of the coating film in the thickness direction far away from the surface of the base material is gradually reduced; the coating film comprises a connecting layer and a functional layer, and the connecting layer is arranged between the functional layer and the surface of the base material; the maximum doping amount of Si in the connecting layer ranges from 40 mol% to 60 mol%; the functional layer is a Si-doped DLC layer, the doping amount of Si in the functional layer ranges from 1 mol% to 4 mol%, and the ratio of the thickness of the functional layer to the total thickness of the coating film ranges from 0.6 to 0.8. The invention further provides a manufacturing method of the wandering star wheel. The Si-doped coating film is arranged on the surface of the wandering star wheel, so that the hardness of the surface of the wandering star wheel is increased, heavy metal pollution during wafer polishing is avoided, and by arranging the multi-layer structure and different Si contents, the requirement for increasing the surface abrasion resistance can be met, and meanwhile the requirement for combining performance can also be met.

Description

Technical Field

[0001] The present application relates to the technical field of crystal material processing, and in particular to a planetary wheel and a manufacturing method thereof. Background Art

[0002] In the process of wafer processing, the planetary wheel used for polishing is an indispensable device. With the continuous advancement of integrated circuit technology, semiconductor manufacturing has developed rapidly, and the output has been continuously improved. The requirements for the wear resistance, deformation resistance, and service life of the planetary wheel have been continuously improved. The wear resistance of the planetary wheel has a great influence on the service life of the consumables in the polishing process.

[0003] Ordinary planetary wheels in conventional technology generally have the following problems due to their own materials and other reasons: the planetary wheel surface is not very wear-resistant, the service life is short, the consumables cost is high, the planetary wheel surface film layer has poor bonding strength and is easy to fall off. Planetary wheels using metal bonding layers have problems such as heavy metal pollution, which can easily cause the performance of semiconductor wafers to decline or even be scrapped. Summary of the invention

[0004] In order to solve one of the above problems, the present application provides a planetary wheel, the surface coating of which has the advantages of good wear resistance, long service life, strong coating bonding, not easy to fall off, no metal layer, and no heavy metal pollution.

[0005] To achieve the above objectives, the technical solutions adopted in this application are as follows:

[0006] On the one hand, the present application discloses a planetary wheel, which includes a substrate and a coating; the substrate includes two opposite substrate surfaces; the coating is arranged on at least one substrate surface, the coating is a Si-doped coating, and the Si doping amount of the coating shows a decreasing trend in the thickness direction away from the substrate surface; the coating includes a connecting layer and a functional layer, and the connecting layer is arranged between the functional layer and the substrate surface; the maximum doping amount of Si in the connecting layer ranges from 40 mol% to 60 mol%; the functional layer is a Si-doped DLC layer, the doping amount of Si in the functional layer is a preset doping amount, the preset doping amount ranges from 1 mol% to 4 mol%, and the ratio of the thickness of the functional layer to the total thickness of the coating ranges from 0.6 to 0.8.

[0007] Furthermore, the connection layer includes a bonding layer and a transition layer, one side of the bonding layer is bonded to the corresponding substrate surface on the coating, and one side of the transition layer is bonded to the functional layer.

[0008] Further, the ratio of the thickness of the bonding layer to the thickness of the transition layer ranges from 0.8 to 1.2.

[0009] Furthermore, the bonding layer includes a first sublayer and a first stabilizing layer, the Si doping amount in the first sublayer is reduced from a maximum doping amount to an intermediate doping amount, and the Si doping amount in the first stabilizing layer is the same as the intermediate doping amount.

[0010] Furthermore, the bonding layer is a Si-doped DLC layer.

[0011] Further, a ratio of a thickness of the first sub-layer to a thickness of the first stabilizing layer ranges from 4 to 6.

[0012] Further, the intermediate doping amount ranges from 5 mol % to 8.5 mol %.

[0013] Furthermore, the transition layer includes a second sublayer and a second stabilization layer, the Si doping amount in the second sublayer is reduced from an intermediate doping amount to a minimum doping amount, and the Si doping amount in the second stabilization layer is the same as the minimum doping amount.

[0014] Further, a ratio of the thickness of the second sub-layer to the thickness of the second stabilizing layer is in a range of 1.5 to 2.5.

[0015] Furthermore, the transition layer is a Si-doped DLC layer.

[0016] Further, the minimum doping amount ranges from 2 mol % to 5 mol %.

[0017] Another aspect of the present application discloses a method for manufacturing a planetary wheel, the manufacturing method comprising the following steps:

[0018] Plating a connection layer, plating a layer on the surface of the substrate to reduce the Si doping amount from a maximum doping amount to a minimum doping amount, thereby obtaining a connection layer;

[0019] The functional layer is plated on the connection layer so that the Si doping amount is maintained at a preset doping amount to obtain the functional layer; the preset doping amount is less than or equal to the minimum doping amount.

[0020] Furthermore, the preparation of the plated connecting layer includes starting coating on the surface of the substrate with a maximum doping amount as the initial doping amount; gradually reducing the doping amount to an intermediate doping amount and continuing with the intermediate doping amount for a period of time; continuing to reduce the doping amount to the minimum doping amount; maintaining the minimum doping amount coating for a period of time; and obtaining the connecting layer.

[0021] Furthermore, the manufacturing method is a plasma enhanced chemical vapor deposition method, and the raw material gas used in preparing the coating by the plasma enhanced chemical vapor deposition method includes a silicon source and a carbon source;

[0022] The Si doping amount of the connecting layer is reduced from the maximum doping amount to the intermediate doping amount by reducing the silicon source and increasing the carbon source flux; the Si doping amount of the connecting layer is reduced from the intermediate doping amount to the minimum doping amount by maintaining the carbon source unchanged and reducing the silicon source flux;

[0023] The Si doping amount of the functional layer converges to a preset doping amount by maintaining the silicon source unchanged and increasing the flux of the carbon source.

[0024] Further, the silicon source includes at least one of siloxane or alkylsiloxane, and the carbon source includes at least one of hydrocarbons.

[0025] Further, the silicon source includes at least one of hexamethyldisiloxane or disiloxane, and the carbon source includes acetylene.

[0026] Therefore, this application has at least the following beneficial effects:

[0027] 1. In the present application, the hardness of the planetary wheel surface is increased by providing a Si-doped DLC functional layer on the planetary wheel surface.

[0028] 2. In the present application, the traditional metal bonding layer is replaced by Si-doped coating, thereby avoiding the problem of heavy metal pollution during wafer polishing.

[0029] 3. In the present application, a two-layer structure is provided in which each layer of the coating has a different Si content, so as to achieve the requirement of increasing the wear resistance of the surface of the planetary wheel and also meet the requirement of the bonding between the coating and the planetary wheel substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is a schematic diagram of the cross-sectional structure of a planetary wheel in one embodiment of the present application;

[0031] Figure 2 This is a schematic diagram of the cross-sectional structure of the coating according to the first embodiment of the present application;

[0032] Figure 3 This is a schematic cross-sectional structure diagram of a coating according to a second embodiment of the present application;

[0033] Figure 4 This is a schematic cross-sectional structure diagram of a coating according to a third embodiment of the present application;

[0034] Figure 5 It is a line graph showing the variation of Si doping amount in each layer in Examples 1 to 9 of the present application;

[0035] Figure 6 is a line graph showing changes in Si doping amounts in each layer in Examples 10 to 11 of the present application;

[0036] Figure 7 is a line graph showing changes in Si doping amounts in each layer in Examples 12 to 13 of the present application;

[0037] Figure 8 It is a line graph showing the change of Si doping amount in Comparative Example 3;

[0038] Fig. 9 It is a line graph showing the variation of Si doping amount in each layer of Comparative Example 4;

[0039] Fig.10 This is a line graph showing the change in Si doping amount in each layer in Comparative Example 5.

[0040] In the figure: planetary wheel 100, substrate 11, coating 12, connecting layer 121, bonding layer 1211, first sublayer 1211a, first stabilizing layer 1211b, transition layer 1212, second sublayer 1212a, second stabilizing layer 1212b, functional layer 122. DETAILED DESCRIPTION

[0041] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation mode of the present application will be clearly and completely described below in conjunction with the drawings in the implementation mode of the present application. In the description of the present application, the description of "inside" and "outside" is based on the "substrate" described below, that is, "inside" refers to the side close to the "base", and "outside" refers to the side away from the "substrate". Specifically, if the inside or outside of a component is described, the "inside" of the component refers to the side of the component close to the "substrate", and the "outside" of the component refers to the side of the component away from the "substrate".

[0042] One aspect of the present application provides a planetary wheel 100, such as Figure 1 As shown, the planetary wheel 100 includes a substrate 11 and a coating 12. The substrate 11 has two opposite substrate surfaces in the thickness direction thereof. The coating 12 is bonded to at least one substrate surface of the substrate 11. For example, a corresponding coating 12 is provided on the substrate surfaces on both sides of the substrate 11.

[0043] The coating 12 is bonded to the surface of the substrate 11 by deposition or the like, and can be prepared by chemical vapor deposition, physical vapor deposition, evaporation or sputtering. In this embodiment, the coating 12 is a silicon-doped coating, which is also a non-metallic coating.

[0044] The Si doping amount of the coating 12 is decreasing in a direction perpendicular to the surface of the substrate 11 and away from the surface of the substrate 11, or in other words, in a thickness direction of the coating away from the surface of the substrate. As the thickness of the coating 12 increases from the surface of the substrate, the Si doping amount decreases continuously or discontinuously (the Si doping amount remains unchanged between multiple continuous decreasing sections).

[0045] like Figure 2As shown, with the substrate surface as a reference, the coating 12 includes a connecting layer 121 and a functional layer 122 from the inside to the outside. The connecting layer 121 is located on the inner side of the coating 12 and one side thereof is bonded to the corresponding substrate surface. The functional layer 122 is located on the outer side of the coating 12 and one side thereof is bonded to the other side of the connecting layer 121. The other side of the functional layer 122 is exposed and forms the surface of the planetary wheel 100.

[0046] A circular hole for accommodating a wafer is provided on the main body of the planetary wheel 100 . When in use, the planetary wheel 100 drives the wafer in the circular hole to grind on the grinding surface so as to grind both sides of the wafer to be flush with the surface of the functional layer.

[0047] The functional layer 122 is a silicon-doped diamond-like carbon film (i.e., Si-doped DLC film or Si-DLC film). In the Si-doped DLC film, Si doping causes Si atoms to replace C atoms in SP2 hybridization, increases the number of SP3 hybridization, increases the SP3 / SP2 ratio on the surface of the DLC film, and improves the surface hardness of the DLC film. In addition, during the aqueous polishing process, the Si-doped DLC film is prone to form a lubricating layer containing silicon oxide on the surface, which can reduce the friction coefficient of the film surface during the polishing and grinding process of the planetary wheel 100, thereby improving the wear resistance of the planetary wheel 100.

[0048] The connection layer 121 is a Si-doped coating. The connection layer 121 can be a Si-DLC film layer like the functional layer 122, or can be other Si-doped coating layers, or can be a Si-DLC film in part and other Si-doped coating layers in part. Si doping can reduce the instability of the film, reduce the internal stress of the film, can replace the traditional metal bonding layer, and can avoid heavy metal pollution caused by the metal bonding layer during wafer polishing.

[0049] The outermost functional layer 122 is the main part of the coating 12, which is in direct contact with the wafer and grinds the wafer. A small amount of Si doping can ensure that the functional layer 122 has a high density, reduce the internal stress of the functional layer 122, and keep the overall functional layer 122 stable. The connecting layer 121 needs to be in direct contact with the substrate 11. The connecting layer 121 has a high Si doping amount, which can improve the bonding ability between the connecting layer 121 and the substrate 11, thereby improving the direct bonding ability between the coating 12 and the substrate 11.

[0050] The doping amount of Si in the connecting layer 121 is reduced from the maximum doping amount to the minimum doping amount, and the maximum doping amount of Si in the connecting layer 121 ranges from 40 mol% to 60 mol%. The maximum doping amount is the doping amount with a large Si content, which can greatly improve the bonding ability of the coating 12 and the substrate 11, and can avoid the excessive performance difference between the coating 12 and the substrate 11 due to the large difference in Si content, which further leads to the problem of poor bonding performance between the coating 12 and the substrate 11, easy peeling and falling off. When the Si content is 40% or more, the bonding performance between the coating 12 and the substrate 11 can be guaranteed, and when the Si content is 60% or less, it can ensure that the change of the Si content in the connecting layer 121 or the coating 12 is not too large, and the overall stability of the connecting layer 121 or the coating 12 can be guaranteed. In the connecting layer 121, the Si doping amount may decrease at a uniform rate or at multiple different rates. The connecting layer 121 may also include some layer structures with constant Si doping amounts. It is only necessary to satisfy that the Si doping amount in the connecting layer 121 shows a decreasing trend as a whole.

[0051] Maintaining the doping amount of Si in the functional layer 122 at a preset doping amount, and controlling the preset doping amount in the range of 1 mol% to 4 mol% can improve the overall stability, which can not only ensure that the surface of the coating 12 has a high density, but also give the coating 12 excellent stability and improve the surface hardness of the surface of the coating 12. The ratio of the thickness of the functional layer 122 to the thickness of the coating 12 is controlled in the range of 0.6 to 0.8. In the planetary wheel 100, the thickness of the coating 12 is basically fixed. Although increasing the thickness of the functional layer 122 can increase the service life of the coating 12, and adding the connecting layer 121 can better improve the bonding force between the coating 12 and the substrate 11, the unlimited increase in the thickness of the connecting layer 121 or the thickness of the functional layer 122 will make the thickness of the connecting layer 121 smaller, which is not conducive to the overall performance of the coating 12.

[0052] The thickness of the functional layer 122 is within the above range, which can ensure that the functional layer 122 has a sufficient thickness and can extend the service life of the coating 12. At the same time, the thickness of the connecting layer 121 can also be guaranteed, which can ensure that the coating 12 and the substrate 11 have excellent bonding strength, and avoid shedding and peeling between the coating 12 and the substrate 11. By controlling the thickness of the functional layer 122 to 60% to 80% of the thickness of the coating 12, starting from the overall performance of the coating 12, the bonding performance, wear resistance and service life of the coating 12 are taken into account, thereby improving the overall performance of the coating 12, and then improving the overall performance of the planetary wheel 100 that takes into account both wear resistance and stability. For example, the planetary wheel has a total surface coating thickness of 2.5μm, wherein the thickness of the functional layer 122 is about 1.6μm.

[0053] like Figure 3 As shown, as an optional embodiment, the connection layer 121 includes a bonding layer 1211 and a transition layer 1212, one side of the bonding layer 1211 is bonded to the surface of the substrate 11 corresponding to the coating 12, and one side of the transition layer 1212 is bonded to the functional layer 122. Providing the bonding layer 1211 and the transition layer 1212 in the connection layer 121 can make the Si doping amount in the connection layer 121 gradually decrease in a more appropriate manner, so that the connection layer 121 has good bonding performance with the substrate 11 layer, and also has good bonding performance with the functional layer 122.

[0054] As an optional embodiment, the ratio of the thickness of the bonding layer 1211 to the thickness of the transition layer 1212 is in a range of 0.8 to 1.2. When the thickness ratio of the bonding layer 1211 to the transition layer 1212 is within the above range, the thickness of the bonding layer 1211 can be ensured, and the bonding performance between the connecting layer 121 and the substrate 11 can be improved; at the same time, the thickness of the transition layer 1212 can be ensured, and the bonding performance between the connecting layer 121 and the functional layer 122 can be improved.

[0055] like Figure 4As shown, as an optional embodiment, the bonding layer 1211 is a Si-doped DLC layer, and the bonding layer 1211 includes a first sublayer 1211a and a first stabilization layer 1211b; the Si doping amount in the first sublayer 1211a is reduced from the maximum doping amount to the intermediate doping amount, and the Si doping amount in the first stabilization layer 1211b is the same as the intermediate doping amount. The bonding layer 1211 includes a first sublayer 1211a with a continuously decreasing Si doping amount and a first stabilization layer 1211b with a relatively stable Si doping amount. In the first sublayer 1211a, the Si doping amount is continuously reduced, and the Si doping amount is reduced from the maximum doping amount to the intermediate doping amount at a relatively large reduction rate, which can not only meet the bonding performance requirements between the bonding layer 1211 and the substrate 11, but also prepare for the subsequent plating of the functional layer 122 with a low Si content. In the first stabilization layer 1211b, the Si doping amount is constant at the intermediate doping amount, and the stable Si doping amount can increase the bonding ability between the bonding layer 1211 and the transition layer 1212. In the first sublayer 1211a, the side close to the substrate 11 has a higher Si doping amount, which can make the coating 12 and the substrate 11 have better bonding ability, ensuring that the coating 12 and the substrate 11 have higher bonding performance. In the first sublayer 1211a, the Si doping amount is quickly reduced, and the thickness of the bonding layer 1211 and the connecting layer 121 can be reduced, thereby relatively increasing the thickness of the functional layer 122 while the total thickness of the coating 12 remains unchanged. In the first stabilization layer 1211b, the Si doping amount is kept relatively unchanged, and the first stabilization layer 12112 can be used to increase the bonding ability of the bonding layer 1211 and the subsequent transition layer 1212, ensuring that the bonding layer 1211 and the transition layer 1212 have higher bonding performance.

[0056] As an optional implementation, the ratio of the thickness of the first sublayer 1211a to the first stabilization layer 1211b is in a range of 4 to 6. The ratio of the thickness of the first sublayer 1211a to the first stabilization layer 1211b within the above range can ensure that the Si doping amount in the first sublayer 1211a can be significantly reduced, and at the same time, the first stabilization layer 1211b can have a certain thickness, thereby improving the bonding performance of the first stabilization layer 1211b and the subsequent transition layer 1212.

[0057] As an optional implementation, the intermediate doping amount ranges from 5 mol% to 8.5 mol%. The intermediate doping amount is a doping amount with a relatively small Si content. When the Si content is 5% or more, the Si content reduction rate is not too large, which can improve the overall stability of the formation. When the Si content is 8.5% or less, the Si content in the connection layer 121 can be quickly reduced within a small thickness range, thereby avoiding the connection layer 121 being too thick and encroaching on the thickness of the functional layer 122.

[0058] like Figure 4 As shown, as an optional embodiment, the transition layer 1212 is a Si-doped DLC layer, and the transition layer 1212 includes a second sublayer 1212a and a second stable layer 1212b. The Si doping amount in the second sublayer 1212a is reduced from the intermediate doping amount to the minimum doping amount, and the Si doping amount in the second stable layer 1212b is the same as the minimum doping amount. The transition layer 1212 includes a second sublayer 1212a with a continuously decreasing Si doping amount and a second stable layer 1212b with a relatively stable Si doping amount. In the second sublayer 1212a, the Si doping amount is continuously reduced, and the Si doping amount is reduced from the intermediate doping amount to the minimum doping amount at a relatively large reduction rate, which can not only meet the bonding performance requirements between the bonding layer 1211 and the substrate 11, but also prepare for the subsequent plating of the functional layer 122 with a low Si content. In the second sublayer 1212a, the side close to the bonding layer 1211 has a higher Si doping amount, which can make the transition layer 1212 have a better bonding ability with the connection layer 121. In the second sublayer 1212a, the Si doping amount is rapidly reduced, and the thickness of the transition layer 1212 and the connection layer 121 can be reduced, thereby relatively increasing the thickness of the functional layer 122 while the total thickness of the coating 12 remains unchanged. In the second stable layer 1212b, the Si doping amount is constant at the minimum doping amount, and the stable Si doping amount can increase the bonding ability between the transition layer 1212 and the functional layer 122. The Si doping amount in the second stable layer 12122b is kept relatively unchanged, and the second stable layer 1212b can be used to increase the bonding ability between the bonding layer 1211 and the subsequent transition layer 1212, ensuring that the bonding layer 1211 and the transition layer 1212 have a high bonding performance.

[0059] As an optional implementation, the ratio of the thickness of the second sublayer 1212a to the thickness of the second stabilization layer 1212b is in a range of 1.5 to 2.5. When the thickness ratio of the second sublayer 1212a to the second stabilization layer 1212b is within the above range, it can ensure that the Si doping amount in the second sublayer 1212a can be significantly reduced, and at the same time, it can also ensure that the second stabilization layer 1212b has a certain thickness, thereby improving the bonding performance of the second stabilization layer 1212b and the subsequent functional layer 122.

[0060] As an optional embodiment, the minimum doping amount ranges from 2 mol% to 5 mol%. In the connection layer 121, the minimum doping amount portion is in contact with the functional layer 122. Controlling the minimum doping amount to be close to the preset doping amount in the functional layer 122 can improve the bonding performance of the connection layer 121 and the functional layer 122, and improve the overall performance of the coating 12. The minimum doping amount is less than the intermediate doping amount, but the difference between the minimum doping amount and the intermediate doping amount is small, so that the difference in Si doping amount of the entire second sublayer 1212a and the first stable layer 1211b is not large, which can improve the stability of the entire second sublayer 1212a and the first stable layer 1211b. At the same time, the sublayer structure composed of the second sublayer 1212a and the second stable layer 1212b can play a transitional role between the sublayer structure composed of the first sublayer 1211a and the first stable layer 1211b and the functional layer 122, which can better combine the connection layer 121 and the functional layer 122 together, and improve the bonding performance of the connection layer 121 and the functional layer 122. Preferably, the preset doping amount of the functional layer 122 is the same as the minimum doping amount.

[0061] It should be noted that the bonding strength between the connecting layer 121 and the surface of the substrate is positively correlated with the Si doping amount between the two. The bonding strength can be ensured by setting the maximum doping amount range of the side where the connecting layer 121 is bonded to the substrate surface to 40 mol% to 60 mol%. Therefore, the connecting layer only needs to meet the high Si doping amount, and can be the above-mentioned DLC layer or other structures other than the DLC layer. The above embodiment only takes the connecting layer as a Si-doped DLC layer as an example, which is not a limitation on the connecting layer.

[0062] Another aspect of the present application further provides a method for manufacturing a planetary wheel 100, the method being used to manufacture the planetary wheel 100, and the method specifically comprising the following steps:

[0063] Plating a connection layer 121, plating a layer on the surface of the substrate to reduce the Si doping amount from a maximum doping amount to a minimum doping amount, thereby obtaining the connection layer 121;

[0064] The functional layer 122 is plated on the bonding layer 121 to keep the Si doping amount at a preset doping amount, thereby obtaining the functional layer 122, wherein the preset doping amount is less than or equal to the minimum doping amount.

[0065] In the present application, the coating 12 on the surface of the planetary wheel 100 can be prepared by chemical vapor deposition or physical vapor deposition, and can also be prepared by vacuum evaporation, magnetron sputtering, ion beam sputtering and other methods, as long as the corresponding coating structure can be obtained.

[0066] As an optional embodiment, the preparation of the plated connecting layer 121 includes first starting to plate on the surface of the substrate with a maximum doping amount as the initial doping amount, then gradually reducing the doping amount to an intermediate doping amount for a period of time, and then continuing to reduce the doping amount to a minimum doping amount for plating, maintaining the minimum doping amount for a period of time to obtain the connecting layer 121.

[0067] As an optional embodiment, the manufacturing method is plasma enhanced chemical vapor deposition (PECVD), and the raw gas used in preparing the coating by plasma enhanced chemical vapor deposition includes a silicon source and a carbon source. In the preparation process, the Si doping amount in each layer structure is controlled by controlling the ratio of the silicon source and the carbon source. Specifically, the Si doping amount of the connecting layer 121 is reduced from the maximum doping amount to the intermediate doping amount by reducing the silicon source and increasing the carbon source flux; the Si doping amount of the connecting layer 121 is reduced from the intermediate doping amount to the minimum doping amount by maintaining the carbon source unchanged and reducing the silicon source flux; the Si doping amount of the functional layer 122 converges to the preset doping amount by maintaining the silicon source unchanged and increasing the carbon source flux. Chemical vapor deposition is used for preparation in this application. By using chemical vapor deposition, the Si doping amount can be accurately and continuously adjusted by controlling the content of the silicon source in the gas source. In the process of coating 12, the Si doping amount is reduced by continuously reducing the content of the silicon source.

[0068] As an optional embodiment, the carbon source can be selected from common carbon-containing gas raw materials commonly used in vapor deposition, such as various hydrocarbon gases; the silicon source can be selected from common silicon-containing gas raw materials commonly used in vapor deposition, such as various silane or siloxane gases. Preferably, in the present application, the carbon source is preferably acetylene, and the silicon source is preferably at least one of hexamethylsiloxane or disiloxane.

[0069] It should be noted that when preparing the functional layer 122, on the one hand, there is a difference between the layer structure bonded to the functional layer 122 and the Si doping amount of the functional layer 122, so a layer structure with a gradually decreasing Si doping amount will also appear in the part of the functional layer 122 close to the previous layer structure, but since the difference in Si doping amount between the functional layer 122 and the previous layer structure is usually small, the layer structure with a gradually decreasing Si doping amount in the functional layer 122 is also thinner, and in some sense this layer structure can also be ignored. On the other hand, it is necessary to gradually reduce the amount of carbon source introduced until the coating is completed. This processing stage belongs to the finishing stage of the coating treatment, and gradually increasing the amount of carbon source introduced plays a role in protecting the manufacturing equipment. Therefore, the functional layer 122 will also include a layer structure for finishing, and the Si doping amount in the finishing layer structure is gradually reduced to 0. Since the finishing layer structure is thin as a whole, and can be removed in the subsequent processing process and is very easy to wear during use, in some sense this finishing layer structure can also be ignored.

[0070] In the present application, the hardness of the surface of the planetary wheel 100 is increased by setting a Si-doped DLC coating 12 on the surface of the planetary wheel 100. In the present application, a two-layer structure and a coating with different Si content in each layer are set to achieve the requirement of increasing the wear resistance of the surface of the planetary wheel 100 and also meet the bonding requirement between the coating 12 and the substrate 11 of the planetary wheel 100. In the present application, the Si-doped DLC coating 12 replaces the traditional metal bonding layer, avoiding the problem of heavy metal pollution during wafer polishing.

[0071] The present application is further described below in conjunction with the embodiments and comparative examples, but the protection scope of the present application is not limited to the embodiments. In the following embodiments and comparative examples, the PECVD method is used to prepare the corresponding coating 12 on the planetary wheel substrate using acetylene as the carbon source and hexamethylsiloxane as the silicon source. The doping amount of Si in the coating 12 is controlled by the amount of hexamethylsiloxane and acetylene introduced into the process gas, and the thickness of each layer in the coating 12 is controlled by controlling the coating treatment time at each stage. According to the description of the preceding part of the present application, a person of ordinary skill in the art can control the corresponding Si doping amount and the thickness of each part in the coating 12 during the coating process. In addition, the thickness of the planetary wheel 100 and the coating 12 needs to be determined according to the crystal material (material and thickness) of the specific processing of the planetary wheel 100. In the present application, only a planetary wheel 100 and a corresponding coating 12 of a specific thickness are provided as a demonstration according to a certain wafer processing process, which does not constitute a limitation on the thickness of the planetary wheel 100 and the coating 12 in the present application.

[0072] The Si doping amount and thickness of each layer in Examples 1 to 13 are shown in Tables 1 and 2 below, wherein the Si doping amount of each layer in Examples 1 to 9 varies as follows: Figure 5 As shown, the Si doping amount of each layer in Examples 10 to 11 varies as follows Figure 6 As shown, the Si doping amount of each layer in Examples 12 to 13 varies as follows Figure 7 shown.

[0073] Table 1 Si doping amount and thickness of each layer in Examples 1 to 9

[0074]

[0075]

[0076] Table 2 shows the Si doping amount and thickness of each layer in Examples 10 to 13

[0077]

[0078] Comparative Example 1

[0079] In Comparative Example 1, other parameters except the following are the same as those in Example 1.

[0080] The total thickness of the coating is 2.4 μm, the thickness of the functional layer is 1.4 μm, the thickness of the first sublayer is 0.42 μm, the thickness of the first stabilization layer is 0.08 μm, the thickness of the second sublayer is 0.34 μm, and the thickness of the second stabilization layer is 0.16 μm.

[0081] Comparative Example 2

[0082] In Comparative Example 2, other parameters except the following are the same as those in Example 1.

[0083] The total thickness of the coating is 2.5 μm, the thickness of the functional layer is 2.1 μm, the thickness of the first sublayer is 0.2 μm, the thickness of the first stabilization layer is 0.05 μm, the thickness of the second sublayer is 0.17 μm, and the thickness of the second stabilization layer is 0.7 μm.

[0084] Comparative Example 3

[0085] The coating in Comparative Example 3 is a single-layer structure, the total thickness of the coating is 2.5 μm, and the Si doping amount in the coating is uniform and is 2 mol%. The Si doping amount in Comparative Example 3 varies as follows: Figure 8 shown.

[0086] Comparative Example 4

[0087] The coating in Comparative Example 4 is a single-layer structure, the total thickness of the coating is 2.5 μm, and the Si doping amount in the coating is uniformly reduced from 50 mol% to 2 mol%. The Si doping amount of each layer in Comparative Example 4 is changed as follows: Fig. 9 shown.

[0088] Comparative Example 5

[0089] In Comparative Example 5, the coating is a double-layer structure, the total thickness of the coating is 2.5 μm, the Si doping amount in the connecting layer is uniformly reduced from 50 mol% to 2 mol%, the thickness of the connecting layer is 1.5 μm, the Si doping amount in the functional layer is maintained at 2 mol%, and the thickness of the functional layer is 1.0 μm. The Si doping amount of each layer in Comparative Example 5 is changed as follows Fig.10 shown.

[0090] Performance testing and results

[0091] Performance Testing

[0092] 1. Surface hardness test:

[0093] The test was conducted using a nanoindenter HM2000S, with the maximum load set to 10 mN, the loading time set to 20 s, the test number set to 30 times, and the hardness data taken as the average.

[0094] 2. Wear resistance test:

[0095] An Anton Paar friction and wear tester was used with a load set to 20N and an environment of deionized water. 3 N 4 The wear scar length is 5 mm, the frequency is 6 Hz (6 times per minute), the number of revolutions is 86400 revolutions (1 hour) / 43200 revolutions (30 minutes), and the reciprocating friction is 4 hours. The wear scar depth is measured using a KLA D300 high-precision step profiler.

[0096] 3. Combined performance test:

[0097] The scratch test was carried out using the MFT-4000 multifunctional material surface performance tester. The parameters were set as follows: loading speed was 100 N / min, end load was 100 N, and scratch length was 5 mm. All parameters remained unchanged. The test was repeated three times, and the average of the three binding force readings was taken.

[0098] Test Results

[0099] The performance test results are shown in Table 3 below.

[0100] Table 3 Performance test results of embodiments and comparative examples

[0101]

[0102]

[0103] It can be seen from Table 3 above that, compared with the planetary wheels obtained in the comparative examples, the planetary wheels obtained in Examples 1 to 13 have more excellent comprehensive performance in terms of surface hardness, wear resistance and bonding performance.

[0104] Finally, it should be noted that the above are only some of the preferred implementation modes of the present application and are not intended to limit the present application. Although the present application has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned implementation modes or to make equivalent replacements for some of the technical features therein. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A planetary wheel (100), characterized in that: include: A substrate (11), wherein the substrate (11) comprises two opposite substrate surfaces; as well as A coating (12), the coating (12) being disposed on at least one surface of the substrate, the coating (12) being a Si-doped coating, and the Si-doping amount of the coating (12) presents a decreasing trend in a thickness direction away from the substrate surface; The coating (12) comprises a connecting layer (121) and a functional layer (122), wherein the connecting layer (121) is arranged between the functional layer (122) and the surface of the substrate; the maximum doping amount of Si in the connecting layer (121) ranges from 40 mol% to 60 mol%; the functional layer (122) is a Si-doped DLC layer, the doping amount of Si in the functional layer (122) is a preset doping amount, the preset doping amount ranges from 1 mol% to 4 mol%, and the ratio of the thickness of the functional layer (122) to the total thickness of the coating (12) ranges from 0.6 to 0.

8.

2. The planetary wheel (100) according to claim 1, characterized in that: The connecting layer (121) comprises a bonding layer (1211) and a transition layer (1212); the ratio of the thickness of the bonding layer (1211) to the thickness of the transition layer (1212) is in the range of 0.8 to 1.2; one side of the bonding layer (1211) is bonded to the corresponding substrate surface on the coating (12), and one side of the transition layer (1212) is bonded to the functional layer (122).

3. The planetary wheel (100) according to claim 2, characterized in that: The bonding layer (1211) is a Si-doped DLC layer, and the bonding layer (1211) includes a first sublayer (1211a) and a first stabilizing layer (1211b), and the ratio of the thickness of the first sublayer (1211a) to the thickness of the first stabilizing layer (1211b) ranges from 4 to 6; the Si doping amount in the first sublayer (1211a) is reduced from the maximum doping amount to an intermediate doping amount, and the Si doping amount of the first stabilizing layer (1211b) is the same as the intermediate doping amount.

4. The planetary wheel (100) according to claim 3, characterized in that: The intermediate doping amount ranges from 5 mol % to 8.5 mol %.

5. The planetary wheel (100) according to claim 2, characterized in that: The transition layer (1212) is a Si-doped DLC layer, and the transition layer (1212) includes a second sublayer (1212a) and a second stabilization layer (1212b), and the ratio of the thickness of the second sublayer (1212a) to the thickness of the second stabilization layer (1212b) is in a range of 1.5 to 2.5; the Si doping amount in the second sublayer (1212a) is reduced from an intermediate doping amount to a minimum doping amount, and the Si doping amount in the second stabilization layer (1212b) is the same as the minimum doping amount.

6. The planetary wheel (100) according to claim 5, characterized in that: The minimum doping amount ranges from 2 mol % to 5 mol %.

7. A method for manufacturing a planetary wheel (100) according to any one of claims 1 to 6, characterized in that: The manufacturing method comprises the following steps: Plating a connection layer (121), plating a layer on the surface of the substrate to reduce the Si doping amount from the maximum doping amount to the minimum doping amount, thereby obtaining the connection layer (121); A functional layer (122) is plated on the connection layer (121) so that the Si doping amount is maintained at the preset doping amount, thereby obtaining the functional layer (122); the preset doping amount is less than or equal to the minimum doping amount.

8. The manufacturing method according to claim 7, characterized in that: The preparation of the plated connection layer (121) comprises: Starting coating on the surface of the substrate with the maximum doping amount as the initial doping amount; gradually reducing the doping amount to an intermediate doping amount and maintaining the intermediate doping amount for a period of time; Continue to reduce the doping amount to the minimum doping amount, and maintain the minimum doping amount for a period of time to form a film; thus obtaining the connecting layer (121).

9. The manufacturing method according to claim 7, characterized in that: The manufacturing method is a plasma enhanced chemical vapor deposition method. When the coating (12) is prepared by the plasma enhanced chemical vapor deposition method, the raw material gas used includes a silicon source and a carbon source; The Si doping amount of the connecting layer (121) is reduced from the maximum doping amount to the intermediate doping amount by reducing the silicon source and increasing the carbon source flux; the Si doping amount of the connecting layer (121) is reduced from the intermediate doping amount to the minimum doping amount by maintaining the carbon source unchanged and reducing the silicon source flux; The Si doping amount of the functional layer (122) is controlled to converge to the preset doping amount by maintaining the silicon source unchanged and increasing the flux of the carbon source.

10. The manufacturing method according to claim 9, characterized in that: The silicon source includes at least one of siloxane or alkylsiloxane, and the carbon source includes at least one of hydrocarbons; Preferably, the silicon source includes at least one of hexamethyldisiloxane or disiloxane, and the carbon source includes acetylene.

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