Vapor transport deposition device and vapor deposition method

Abstract

The invention discloses a vapor transport deposition device and a vapor deposition method, and belongs to the technical field of thin film preparation. The vapor transport deposition device comprises a carrier gas preheating unit, a source material gasification unit, a vapor distribution unit and a deposition unit, the carrier gas preheating unit is provided with a carrier gas outlet, the carrier gas outlet is communicated with the cavity of the steam distribution unit, and the carrier gas preheating unit is used for conveying preheated carrier gas to the cavity of the steam distribution unit; the source material gasification unit is provided with a steam outlet, the steam outlet is communicated with the cavity of the steam distribution unit, and the source material gasification unit is used for conveying source material steam to the cavity of the steam distribution unit; the vapor distribution unit has a vapor distribution outlet disposed facing the deposition unit. The vapor outlet is located downstream of the carrier gas outlet and the vapor distribution outlet is located downstream of the vapor outlet such that the carrier gas carrying the source material vapor is delivered to the vapor distribution outlet. The carrier gas temperature is used as an adjustable factor and can be used for adjusting and controlling the morphology of the film formed by the reaction.

Description

Technical Field

[0001] The present disclosure relates to the technical field of thin film preparation, and in particular to a vapor transport deposition device and a vapor deposition method. Background Art

[0002] The dry coating process has the advantages of good uniform coating, high film quality, and conformal deposition. Its common process implementation method is vapor transport deposition, which is usually used for the preparation of semiconductor material films, such as cadmium telluride films, copper indium gallium selenide films, and perovskite films. The implementation of the vapor transport deposition process is usually carried out in a vapor transport deposition device, which includes a carrier gas delivery pipeline and a source material gasification unit. The source material gasification unit is used to sublimate the solid source material to form a gaseous source material. The carrier gas delivery pipeline is used to transport the carrier gas, and the carrier gas carries the gaseous source material to the substrate for film formation.

[0003] The related technology provides a vapor transport deposition device, in which a carrier gas delivery pipeline is connected to a source material vaporization unit, so that the carrier gas directly carries the source material powder into the source material vaporization unit, or the carrier gas directly enters the source material vaporization unit loaded with the source material powder. Finally, the carrier gas carries the sublimated source material atmosphere and transports it to the substrate for deposition.

[0004] However, the vapor transport deposition device involved in the related art, on the one hand, its carrier gas is not only easy to form the purge and carry of the solid source material powder that is not fully sublimated, which will lead to the reduction of the quality of the deposited film. On the other hand, the temperature of the carrier gas is easily assimilated by the internal temperature of the source material vaporization unit, making it difficult to adjust the vapor deposition process by adjusting the temperature of the carrier gas, that is, the temperature of the carrier gas is difficult to be used as a regulating factor to adjust the morphology of the deposited film. Summary of the invention

[0005] The embodiments of the present disclosure provide a vapor transport deposition device and a vapor deposition method, which can solve the technical problems existing in the related art. Specifically, the technical solution is as follows.

[0006] On the one hand, a vapor transport deposition device is provided, which includes: a carrier gas preheating unit, a source material vaporization unit, a vapor distribution unit and a deposition unit; the carrier gas preheating unit has a carrier gas outlet, which is connected to the chamber of the vapor distribution unit, and the carrier gas preheating unit is used to transport preheated carrier gas to the chamber of the vapor distribution unit through the carrier gas outlet; the source material vaporization unit has a vapor outlet, which is connected to the chamber of the vapor distribution unit, and the source material vaporization unit is used to transport source material vapor to the chamber of the vapor distribution unit through the vapor outlet; the vapor distribution unit has a vapor distribution outlet, which is arranged facing the deposition unit; wherein the vapor outlet is located downstream of the carrier gas outlet, and the vapor distribution outlet is located downstream of the vapor outlet, so that the carrier gas carries the source material vapor to the vapor distribution outlet.

[0007] The vapor transport deposition device provided by the embodiment of the present disclosure has a carrier gas preheating unit and a source material vaporization unit which are arranged independently. The carrier gas preheating unit can heat the carrier gas to a specific temperature and transport the preheated carrier gas to the chamber of the vapor distribution unit through the carrier gas outlet. Since the vapor outlet is located downstream of the carrier gas outlet, the source material vapor generated by the source material vaporization unit can be mixed with the carrier gas and carried by the carrier gas after entering the chamber of the vapor distribution unit. Under the carrier gas, the source material vapor is transported to the deposition unit through the vapor distribution outlet for vapor deposition. It can be seen that, on the one hand, since the preheated carrier gas is not introduced into the source material vaporization unit, it is effectively avoided that the solid source material that is not fully sublimated is swept to the outside of the source material vaporization unit by the preheated carrier gas, thereby avoiding the reduction of the film quality caused by this. On the other hand, the temperature of the preheated carrier gas is not affected by the temperature of the source material vaporization unit, which effectively avoids the carrier gas being assimilated by the temperature of the source material vaporization unit before vapor deposition, ensuring that the carrier gas can participate in vapor deposition based on a specific temperature. This is not only beneficial to improving the coating rate, but also, the carrier gas temperature is an adjustable factor. By changing the heating temperature of the carrier gas by the carrier gas preheating unit, the temperature environment when the carrier gas carries the source material vapor to the deposition unit can be changed, so as to affect the vapor deposition process and achieve the purpose of regulating the morphology of the formed thin film.

[0008] In some possible implementations, the carrier gas preheating unit includes a carrier gas chamber, a carrier gas delivery pipeline connected to the carrier gas chamber, and a first heating element assembled to the carrier gas delivery pipeline; the carrier gas chamber is used to store the carrier gas, the carrier gas delivery pipeline is used to transport the carrier gas, the first heating element is used to heat the carrier gas transported in the carrier gas delivery pipeline, and the first heating element is also electrically connected to a control system of a vapor transport deposition device, and the control system is used to control the operation of the first heating element.

[0009] In some possible implementations, the carrier gas preheating unit further includes a carrier gas flow rate regulator disposed on the carrier gas delivery pipeline, and the carrier gas flow rate regulator is also electrically connected to the control system of the vapor transport deposition device. By controlling the carrier gas temperature and flow rate, combined with the gasification rate of the source material gasification unit, the rate of vapor deposition can be accurately adjusted to meet the requirements of different thin film preparations.

[0010] In some possible implementations, the source material vaporization unit includes: a vaporization chamber, and a second heating element assembled to the vaporization chamber, the vaporization chamber is used to generate the source material vapor and is provided with the vapor outlet, the second heating element is also electrically connected to a control system of the vapor transport deposition device, and the control system is used to control the operation of the second heating element.

[0011] In some possible implementations, the carrier gas preheating unit includes a carrier gas delivery pipeline, the carrier gas delivery pipeline is partially located in the chamber of the vapor distribution unit, the end of the pipe section of the carrier gas delivery pipeline located in the chamber of the vapor distribution unit is closed, and a plurality of carrier gas outlets are arranged on the pipe wall along the axial direction; the source material vaporization unit includes a vaporization chamber, the vaporization chamber is located in the chamber of the vapor distribution unit, and the vapor outlet is opened in the vaporization chamber. The advantages of this embodiment are: it can make the overall structure of the vapor transport deposition device more compact, reduce the number of connecting components, simplify the structure of the vapor transport deposition device, and improve its operation reliability.

[0012] In some possible implementations, the carrier gas delivery pipeline is adjustably arranged in the chamber of the vapor distribution unit. The carrier gas delivery pipeline can be rotated to adjust the carrier gas purge angle to avoid uneven mixing or local air flow turbulence.

[0013] In some possible implementations, the vapor distribution unit has a first baffle and a second baffle, at least one of the first baffle and the second baffle is arranged at an angle, and a transmission channel is formed between the first baffle and the second baffle, and the transmission channel is used for transmitting carrier gas and source material vapor; the size of the second end of the transmission channel close to the vapor distribution outlet is smaller than the size of the first end of the transmission channel close to the source material vaporization unit.

[0014] The inclined baffles guide the carrier gas and source material vapor, allowing them to flow along the set transmission channel, avoiding airflow turbulence and ensuring that the two gases can be mixed and transmitted in a more orderly manner, which is beneficial to improving the stability and controllability of the gas phase transmission process.

[0015] In some possible implementations, the vaporization chamber is a crucible, and a slit is provided on the top of the crucible as the vapor outlet. By using the slit as the vapor outlet, the slit has a directional and uniform transmission effect on the sublimation atmosphere, which is conducive to uniform deposition of the source material vapor on the substrate, forming a film with uniform thickness and uniform composition, and improving the film quality.

[0016] In some possible implementations, a mixing structure is provided in the chamber of the vapor distribution unit, and the mixing structure is located downstream of the vapor outlet and upstream of the vapor distribution outlet, and is used to promote the mixing of the carrier gas and the source material vapor, thereby improving the uniformity and consistency of the subsequent deposition reaction.

[0017] In some possible implementations, the carrier gas preheating unit and the source material vaporization unit are both located outside the vapor distribution unit; the source material vaporization unit includes a vaporization chamber and the vaporization chamber has a vapor outlet, a source material vaporizer is disposed inside the vaporization chamber, and the source material vaporizer is used to sublime the solid source material; the vapor transport deposition device also includes a distributor, the distributor is at least partially located inside the chamber of the vapor distribution unit, the distributor has a discharge port and the discharge port is located above the vapor distribution outlet, and the distributor is respectively connected to the carrier gas outlet of the carrier gas preheating unit and the vapor outlet of the source material vaporization unit.

[0018] The advantages of this implementation scheme are that the carrier gas preheating unit and the source material vaporization unit are located outside the steam distribution unit chamber, which is convenient for maintenance and replacement of the two on the one hand, and is more advantageous for the flexible layout and expansion of the vapor transport deposition device on the other hand, so that the position and quantity of the carrier gas preheating unit and the material vaporization unit can be flexibly arranged according to different process requirements and site conditions, and it is also convenient to monitor and control the operation process of the carrier gas preheating unit and the source material vaporization unit.

[0019] In some possible implementations, the distributor is tubular, and the end of the distributor closes a plurality of discharge ports spaced apart in the axial direction on the tube wall of the distributor. This solution has the advantages of simple structure, good mixing effect, and high uniformity of gas distribution, so as to ensure that the carrier gas carrying the source material vapor is uniformly transported to the chamber of the vapor distribution unit.

[0020] In some possible implementations, the vapor transport deposition device also includes: a carrier gas redistributor, which is located inside the chamber of the vapor distribution unit and above the distributor; the carrier gas redistributor has a carrier gas inlet and a carrier gas distribution port, the carrier gas inlet is connected to the carrier gas outlet of the carrier gas preheating unit, and the carrier gas distribution port is used to provide carrier gas to the chamber of the vapor distribution unit.

[0021] By further arranging a carrier gas redistributor, the carrier gas can be redistributed and adjusted, and the carrier gas can further form a more uniform flow field in the chamber, fully contact and mix with the source material vapor, and improve mixing uniformity and efficiency.

[0022] In some possible implementations, the carrier gas preheating unit and the source material vaporization unit are both located outside the vapor distribution unit; the source material vaporization unit includes a vaporization chamber located outside the vapor distribution unit and the vaporization chamber has a vapor outlet, a source material vaporizer is provided inside the vaporization chamber, and the source material vaporizer is used to sublime the solid source material; the vapor transport deposition device also includes a carrier gas distributor and a gaseous source distributor, the carrier gas distributor is located upstream of the gaseous source distributor, the inlet of the carrier gas distributor is connected to the carrier gas outlet of the carrier gas preheating unit, the carrier gas distributor also has a carrier gas distribution outlet, the inlet of the gaseous source distributor is connected to the vapor outlet of the source material vaporization unit, and the gaseous source distributor also has a gaseous source distribution outlet.

[0023] The advantages of the above embodiment are: the carrier gas distributor can distribute the carrier gas to each area evenly and accurately according to the set parameters such as flow rate and pressure, and the gas source distributor can also play the same role for the gas source material, and the carrier gas distributor and the gas source distributor can be controlled separately. Therefore, accurate gas distribution and sufficient mixing are achieved through the carrier gas distributor and the gas source distributor, making the deposition process more uniform, stable and controllable, and improving the composition uniformity and consistency of the deposited film.

[0024] In some possible implementations, the carrier gas distributor is tubular, the end of the carrier gas distributor is closed, and the multiple carrier gas distribution outlets are arranged on the tube wall of the carrier gas distributor at intervals along the axial direction; the gas source distributor is tubular, the end of the gas source distributor is closed, and the multiple gas source distribution outlets are arranged on the tube wall of the gas source distributor at intervals along the axial direction.

[0025] This solution has the advantages of simple structure, good mixing effect, high gas distribution uniformity, etc., to ensure that the carrier gas carrying the source material vapor is evenly transported to the chamber of the vapor distribution unit.

[0026] In some possible implementations, the deposition unit includes: a deposition chamber and a stage, the vapor distribution unit is located inside the deposition chamber, or the vapor distribution unit is fixedly connected to the deposition chamber so that the vapor distribution outlet is accommodated inside the deposition chamber; the stage is located inside the deposition chamber and arranged facing the vapor distribution outlet, and the stage is used to carry a substrate.

[0027] The stage is movably arranged to facilitate its entry or exit into the deposition chamber, thereby conveniently operating the substrate thereon. When in use, the carrier gas carries the source material vapor through the vapor distribution outlet and is transported to the substrate in the deposition chamber to implement vapor deposition.

[0028] On the other hand, a vapor deposition method is provided, which is applied to any of the vapor transport deposition devices described above. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of the arrangement relationship of various components in a first exemplary vapor transport deposition device provided in an embodiment of the present disclosure;

[0030] Figure 2 A schematic diagram of the arrangement relationship of various components in a second exemplary vapor transport deposition device provided in an embodiment of the present disclosure;

[0031] Figure 3 A cross-sectional view of an exemplary vapor transport deposition apparatus provided for an embodiment of the present disclosure;

[0032] Figure 4 for Figure 3 An exemplary structural schematic diagram of a vapor transport deposition device shown in the vapor transport deposition device;

[0033] Figure 5 A cross-sectional view of another exemplary vapor transport deposition apparatus provided for an embodiment of the present disclosure;

[0034] Figure 6 for Figure 5 An exemplary structural schematic diagram of a vapor transport deposition device shown in the vapor transport deposition device;

[0035] Figure 7 A cross-sectional view of another exemplary vapor transport deposition apparatus provided for an embodiment of the present disclosure;

[0036] Figure 8 A cross-sectional view of another exemplary vapor transport deposition apparatus provided for an embodiment of the present disclosure;

[0037] Fig. 9 A schematic diagram of the arrangement relationship of various components in a third exemplary vapor transport deposition device provided in an embodiment of the present disclosure;

[0038] Fig.10 A schematic diagram showing the arrangement relationship of the components in a fourth exemplary vapor transport deposition apparatus provided in an embodiment of the present disclosure.

[0039] The reference numerals represent:

[0040] 100. Carrier gas preheating unit;

[0041] 10. carrier gas outlet; 11. carrier gas chamber; 12. carrier gas delivery pipeline; 13. first heating element;

[0042] 200. Source material gasification unit;

[0043] 20. steam outlet; 21. vaporization chamber; 22. second heating element; 23. source material vaporizer;

[0044] 300. Steam distribution unit;

[0045] 30. Steam distribution outlet; 31. First baffle; 32. Second baffle; 33. Distributor; 331. Discharge port;

[0046] 34. carrier gas redistributor; 341. carrier gas inlet; 342. carrier gas distribution port;

[0047] 35. carrier gas distributor; 351. carrier gas distribution outlet; 36. gas source distributor; 361. gas source distribution outlet;

[0048] 400, sedimentation unit;

[0049] 40. Substrate; 41. Deposition chamber; 42. Stage. DETAILED DESCRIPTION

[0050] The technical solution of the embodiment of the present disclosure will be further described below in conjunction with the drawings in the embodiment of the present disclosure. When the following description refers to the drawings, it should be understood that the orientation or position relationship indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", "axial", "circumferential", etc. is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. Taking the terms "upper" and "lower" as examples, the orientation of the deposition unit can be defined as being below the vapor transport deposition device.

[0051] Perovskite thin film cells are a new type of solar cell with high photoelectric conversion efficiency, high open circuit voltage, low energy loss and high application potential. Perovskite thin film cells are equipped with perovskite thin film as a light absorption layer. The quality of perovskite thin film has an important influence on the photoelectric performance of perovskite thin film cells. The parameters used to evaluate the quality of perovskite thin film include the morphology, uniformity and crystallinity of the absorption layer, and the quality parameters of perovskite thin film are largely affected by its preparation process.

[0052] The dry coating process has the advantages of good uniform coating, high film quality, and conformal deposition. Its common process implementation method is vapor transport deposition, which is usually used for the preparation of semiconductor material films, such as cadmium telluride films, copper indium gallium selenide films, and perovskite films. The implementation of the vapor transport deposition process is usually carried out in a vapor transport deposition device, which includes a carrier gas delivery pipeline and a source material gasification unit. The source material gasification unit is used to sublimate the solid source material to form a gaseous source material. The carrier gas delivery pipeline is used to transport the carrier gas, and the carrier gas carries the gaseous source material to the substrate for film formation.

[0053] The related technology provides a vapor transport deposition device, in which a carrier gas delivery pipeline is connected to a source material vaporization unit, so that the carrier gas directly carries the source material powder into the source material vaporization unit, or the carrier gas directly enters the source material vaporization unit loaded with the source material powder. Finally, the carrier gas carries the sublimated source material atmosphere and transports it to the substrate for deposition.

[0054] However, the vapor transport deposition device involved in the related art, on the one hand, its carrier gas is not only easy to form the purge and carry of the solid source material powder that is not fully sublimated, which will lead to the reduction of the quality of the deposited film. On the other hand, the temperature of the carrier gas is easily assimilated by the internal temperature of the source material vaporization unit, making it difficult to adjust the vapor deposition process by adjusting the temperature of the carrier gas, that is, the temperature of the carrier gas is difficult to be used as a regulating factor to adjust the morphology of the deposited film.

[0055] In view of the technical problems existing in the related art, the embodiments of the present disclosure provide a novel vapor transport deposition device, as shown in the attached Figure 1 As shown, the vapor transport deposition device includes: a carrier gas preheating unit 100, a source material vaporization unit 200, a vapor distribution unit 300 and a deposition unit 400. The carrier gas preheating unit 100 has a carrier gas outlet 10, which is connected to the chamber of the vapor distribution unit 300. The carrier gas preheating unit 100 is used to transport the preheated carrier gas to the chamber of the vapor distribution unit 300 through the carrier gas outlet 10. The source material vaporization unit 200 has a vapor outlet 20, which is connected to the chamber of the vapor distribution unit 300. The source material vaporization unit 200 is used to transport the source material vapor to the chamber of the vapor distribution unit 300 through the vapor outlet 20. The shell wall of the vapor distribution unit 300 is provided with a vapor distribution outlet 30, and the vapor distribution outlet 30 is arranged facing the deposition unit 400. Among them, the vapor outlet 20 is located downstream of the carrier gas outlet 10, and the vapor distribution outlet 30 is located downstream of the vapor outlet 20, so that the carrier gas carries the source material vapor to the vapor distribution outlet 30.

[0056] In the embodiments of the present disclosure, the "upstream" and "downstream" involved are based on the material transmission path. When the material is transmitted along the transmission path, it can be considered to be transmitted from upstream to downstream, that is, the starting point of the transmission path is in an upstream position relative to the end point of the transmission path. For example, component A is in the upstream of the transmission path, and component B is in the downstream of the transmission path, which means that the material is transmitted from component A to component B. This has no corresponding relationship with the absolute positions of component A and component B. For example, in this case, the absolute position of component A can be above the absolute position of component B, and it does not exclude that the absolute position of component A is below the absolute position of component B.

[0057] The working principle of the vapor transport deposition device provided by the embodiment of the present disclosure is as follows: the carrier gas preheating unit 100 heats the carrier gas and delivers the preheated carrier gas to the vapor distribution unit 300, and the source material vaporization unit 200 sublimates the source material to form source material vapor and delivers it to the chamber of the vapor distribution unit 300. Since the vapor outlet 20 is located downstream of the carrier gas outlet 10, the source material vapor is carried by the preheated carrier gas and fully mixed with the preheated carrier gas during the transportation process, and finally sprayed from the vapor distribution outlet 30 of the vapor distribution unit 300 to the substrate 40 of the deposition unit 400 to achieve thin film deposition. In this process, since the carrier gas preheating unit 100 and the source material vaporization unit 200 are arranged independently, the preheated carrier gas is not introduced into the source material vaporization unit 200, that is, the preheated carrier gas and the source material vapor meet and mix in the vapor distribution unit 300. Moreover, the vapor outlet 20 is located downstream of the carrier gas outlet 10, and the vapor distribution outlet 30 is located downstream of the vapor outlet 20, so that when the source material vapor enters the chamber of the vapor distribution unit 300 from the vapor outlet 20, the carrier gas flowing at a certain flow rate and direction can provide a stable flow environment for the source material vapor, promote the source material vapor to be more evenly dispersed and mixed in the chamber, avoid the situation where the local concentration of the source material vapor is too high or too low, and is conducive to forming a uniform film in the subsequent deposition process. Finally, the source material vapor enters the downstream vapor distribution outlet 30 under the carrier gas, ensuring that the source material vapor can stably and continuously reach the deposition unit 400, thereby ensuring the efficiency and quality of vapor deposition.

[0058] In summary, the vapor transport deposition device provided by the embodiment of the present disclosure has a carrier gas preheating unit 100 and a source material vaporization unit 200 which are arranged independently. The carrier gas preheating unit 100 can heat the carrier gas to a specific temperature and deliver the preheated carrier gas to the chamber of the vapor distribution unit 300 through the carrier gas outlet 10. Since the vapor outlet 20 is located downstream of the carrier gas outlet 10, the source material vapor generated by the source material vaporization unit 200 can be mixed with the carrier gas and carried by the carrier gas after entering the chamber of the vapor distribution unit 300. Under the carrier gas, the source material vapor is delivered to the deposition unit 400 through the vapor distribution outlet 30 for vapor deposition. It can be seen that, on the one hand, since the preheated carrier gas is not introduced into the source material vaporization unit 200, it is effectively avoided that the solid source material that is not fully sublimated is swept to the outside of the source material vaporization unit 200 by the preheated carrier gas, thereby avoiding the reduction of the film quality caused by this. On the other hand, the temperature of the preheated carrier gas is not affected by the temperature of the source material vaporization unit 200, which effectively avoids the carrier gas being assimilated by the temperature of the source material vaporization unit 200 before vapor deposition, and ensures that the carrier gas can participate in vapor deposition based on a specific temperature. This is not only beneficial to improving the coating rate, but also, the carrier gas temperature is an adjustable factor. By changing the heating temperature of the carrier gas by the carrier gas preheating unit 100, the temperature environment when the carrier gas carries the source material vapor to the deposition unit 400 is changed, so as to affect the vapor deposition process and achieve the purpose of regulating the morphology of the formed thin film.

[0059] See also Figure 2 The carrier gas preheating unit 100 includes a carrier gas chamber 11, a carrier gas delivery pipe 12 connected to the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas delivery pipe 12. The carrier gas chamber 11 is used to store carrier gas, the carrier gas delivery pipe 12 is used to transport carrier gas and the carrier gas delivery pipe 12 is provided with a carrier gas outlet 10. The first heating element 13 is used to heat the carrier gas transported in the carrier gas delivery pipe 12. The first heating element 13 is also electrically connected to a control system of the gas transport deposition device, and the control system is used to control the operation of the first heating element 13.

[0060] For example, the first heating element 13 may be a resistance wire, a heating belt, a heating sleeve, etc. The temperature of the carrier gas output by the carrier gas preheating unit 100 may be adjusted by adjusting the heating power of the first heating element 13 through a control system.

[0061] Furthermore, in order to achieve accurate control of the carrier gas temperature, a temperature sensor (e.g., a thermocouple, a thermal resistor, etc.) may be provided inside the carrier gas delivery pipeline 12. The temperature sensor is electrically connected to the control system, and the temperature sensor is used to monitor the temperature of the carrier gas in real time and feed back the temperature signal to the control system. The control system automatically adjusts the heating power of the first heating element 13 based on the comparison between the preset temperature value and the actual temperature value of the carrier gas, so that the carrier gas temperature is stabilized at the preset temperature value.

[0062] In the disclosed embodiment, not only the carrier gas temperature can be used as a factor to regulate the vapor deposition process, but also the carrier gas flow rate (i.e., flow rate) can be used as a regulating factor. For example, by controlling the carrier gas temperature and flow rate, combined with the vaporization rate of the source material vaporization unit 200, the vapor deposition rate can be accurately adjusted to meet the requirements of different thin film preparations, so as to achieve the purpose of promoting the uniform adsorption and growth of the source material vapor on the substrate 40 based on the appropriate carrier gas temperature and flow rate, thereby facilitating the formation of a dense, flat, or thin film with a specific microstructure.

[0063] According to the above technical solution, the carrier gas preheating unit 100 may further include a carrier gas flow regulator disposed on the carrier gas delivery pipeline 12, and the carrier gas flow regulator is also electrically connected to the control system of the gas transport deposition device.

[0064] The carrier gas flow regulating member may include an electric control valve and a flow sensor, the electric control valve being electrically connected to a control system of the gas phase transport deposition device, and the electric control valve being able to adjust the flow cross-sectional area of ​​the carrier gas by changing the opening of the valve, thereby controlling the flow rate of the carrier gas. The control system is used to adjust the opening of the electric valve according to the carrier gas flow measured by the flow sensor, thereby achieving precise control of the carrier gas flow rate.

[0065] In the embodiments of the present disclosure, see Figure 2 The source material vaporization unit 200 includes: a vaporization chamber 21, a second heating element 22 assembled to the vaporization chamber 21, the vaporization chamber 21 is used to generate and transport source material vapor and is provided with a vapor outlet 20, the second heating element 22 is also electrically connected to a control system of the vapor transport deposition device, and the control system is used to control the operation of the second heating element 22.

[0066] For example, the vaporization chamber 21 can be a crucible, an evaporation boat, or a chamber loaded with a crucible or an evaporation boat, and the second heating element 22 can be a resistive heater (such as a resistance wire), an infrared heater, a radio frequency heater, an electron beam heater, a microwave heater, etc. The second heating element 22 can be arranged on the inner wall or the outer wall of the vaporization chamber 21. The heating power of the second heating element 22 can be adjusted by the control system to achieve sufficient vaporization processing of the source material by the source material vaporization unit 200.

[0067] For any of the above-mentioned vapor transport deposition devices, the positional relationship between the carrier gas preheating unit 100 and the source material vaporization unit 200 and the vapor distribution unit 300 may be further defined as follows.

[0068] In some embodiments (1), see Figure 3 and Figure 4The carrier gas preheating unit 100 includes a carrier gas delivery pipeline 12, which is partially located in the chamber of the vapor distribution unit 300. The end of the pipe section of the carrier gas delivery pipeline 12 located in the chamber of the vapor distribution unit 300 is closed, and a plurality of carrier gas outlets 10 are arranged on the pipe wall along the axial direction. The source material vaporization unit 200 includes a vaporization chamber 21 loaded with solid source materials, the vaporization chamber 21 is located in the chamber of the vapor distribution unit 300, and the vapor outlet 20 is opened in the vaporization chamber 21.

[0069] For implementation scheme (1), its carrier gas preheating unit 100 is as shown above, including a carrier gas chamber 11, a carrier gas delivery pipe 12 connected to the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas delivery pipe 12, wherein the downstream pipe section of the carrier gas delivery pipe 12 is located in the chamber of the steam distribution unit 300, and the end of the downstream pipe section of the carrier gas delivery pipe 12 is closed, and a plurality of carrier gas outlets 10 are arranged on the pipe wall of the downstream pipe section of the carrier gas delivery pipe 12, so that the preheated carrier gas is evenly distributed by the plurality of carrier gas outlets 10.

[0070] The working principle of the above embodiment (1) is as follows: the carrier gas preheating unit 100 directly delivers the preheated carrier gas into the chamber of the vapor distribution unit 300 through a plurality of carrier gas outlets 10 provided on the wall of the carrier gas delivery pipe 12 thereof, and at the same time, the source material vapor generated by the source material vaporization unit 200 is also directly delivered into the chamber of the vapor distribution unit 300 through the vapor outlet 20. The preheated carrier gas carries the source material vapor and flows in the chamber of the vapor distribution unit 300, and the two are evenly mixed during the flow process, and finally ejected from the vapor distribution outlet 30 and deposited on the substrate 40 of the deposition unit 400.

[0071] The advantage of implementation scheme (1) is that it can make the overall structure of the vapor transport deposition device more compact, reduce the number of connecting components, simplify the structure of the vapor transport deposition device, and improve its operational reliability.

[0072] Among them, by arranging multiple carrier gas outlets 10 at intervals along the axial direction on the wall of the carrier gas delivery pipe 12, the carrier gas can be evenly distributed in the chamber of the vapor distribution unit 300 and fully and evenly mixed with the source material vapor delivered from the vapor outlet 20, which is conducive to forming a more stable and uniform atmosphere during the gas phase transmission process, and further helps to improve the quality and uniformity of the deposited film and reduce the non-uniformity of the film thickness and composition.

[0073] In some examples, for example, the vaporization chamber 21 is a crucible, and the top of the crucible has a slit as the vapor outlet 20. The slit referred to here means that its length dimension is greater than its width dimension, for example, the length dimension is at least 5 times the width dimension, or even greater than or equal to 10 times.

[0074] By using the slit as the vapor outlet 20, the slit has a directional and uniform transmission effect on the sublimation atmosphere, which is beneficial for the uniform deposition of the source material vapor on the substrate, forming a film with uniform thickness and uniform composition, and improving the quality of the film.

[0075] Since the carrier gas preheating unit 100 and the source material vaporization unit 200 are both arranged inside the vapor distribution unit 300, the distance between the carrier gas outlet 10 and the vapor outlet 20 of the vaporization chamber 21 is relatively close. On the basis that the carrier gas does not enter the source material vaporization unit 200, it is necessary to reasonably design the position, shape and angle of the carrier gas outlet 10 and the vapor outlet 20 so that the carrier gas can effectively carry the source material vapor to avoid uneven mixing or local air flow turbulence. In response to this technical problem, in some examples, the carrier gas delivery pipeline 12 can be arranged in the chamber of the vapor distribution unit 300 in an adjustable position. For example, when the carrier gas delivery pipeline 12 rotates with its axis as the rotation axis, its rotation angle can be changed, that is, the carrier gas delivery pipeline 12 is rotatably arranged in the chamber of the vapor distribution unit 300, so that the carrier gas delivery pipeline 12 can be rotated to adjust the carrier gas purge angle to avoid uneven mixing or local air flow turbulence.

[0076] Furthermore, as attached Figure 4 As shown, the vapor distribution unit 300 has a first baffle 31 and a second baffle 32, at least one of the first baffle 31 and the second baffle 32 is arranged at an angle, and a transmission channel is formed between the first baffle 31 and the second baffle 32, and the transmission channel is used for the transmission of carrier gas and source material vapor; the size of the second end of the transmission channel close to the vapor distribution outlet 30 is smaller than the size of the first end of the transmission channel close to the source material vaporization unit 200.

[0077] In some examples, the first baffle 31 and the second baffle 32 can be arranged obliquely, so that the longitudinal section of the transmission channel between the two is trapezoidal, so that the transmission channel is wide at the top and narrow at the bottom. For example, the first baffle 31 is disposed in the chamber of the steam distribution unit 300, and the first end of the first baffle 31 is overlapped to the vaporization chamber 21 (for example, overlapped to the top of the vaporization chamber 21), and the second end of the first baffle 31 is overlapped to the bottom wall of the chamber of the steam distribution unit 300 where the steam distribution outlet 30 is disposed.

[0078] The second baffle 32 can be provided by the cavity wall of the steam distribution unit 300 to achieve the purpose of simplifying the structural layout (of course, it is not ruled out that the second baffle 32 can be separately arranged inside the cavity of the steam distribution unit 300). The first end of the second baffle 32 is connected to the cavity top wall of the steam distribution unit 300, and the second end of the second baffle 32 is connected to the cavity bottom wall of the steam distribution unit 300. The steam distribution outlet 30 is located between the second end of the first baffle 31 and the second end of the second baffle 32.

[0079] The inclined baffles guide the carrier gas and source material vapor, allowing them to flow along the set transmission channel, avoiding airflow turbulence, ensuring that the two gases can be mixed and transmitted in a more orderly manner, and helping to improve the stability and controllability of the gas phase transmission process. The inclined baffles and variable-sized transmission channels can reduce dead zones and eddies in the gas transmission process, allowing the gas to pass through the transmission channel more smoothly and evenly, reducing the residence time of the gas in the chamber, thereby improving the gas transmission efficiency. In addition, according to the principles of fluid mechanics, when the gas enters a smaller space from a larger space, not only will the flow rate increase, but the gas pressure will also increase, which is not only conducive to enhancing the mixing effect of the carrier gas and the source material vapor, but also conducive to the mixed gas being smoothly discharged from the vapor distribution unit 300.

[0080] With respect to the above-mentioned embodiment (1), in some examples, a mixing structure may be provided in the chamber of the vapor distribution unit 300, and the mixing structure may be located downstream of the vapor outlet 20 and upstream of the vapor distribution outlet 30, so as to promote the mixing of the carrier gas and the source material vapor, thereby improving the uniformity and consistency of the subsequent deposition reaction.

[0081] For example, the mixing structure may be arranged in the area where the steam distribution outlet 30 is located. The mixing structure may be a compensation plate, a twisted blade static mixer, a porous plate, a spiral flow channel plate, etc. arranged along the gas flow direction.

[0082] In combination with any of the above-mentioned embodiments (1), the vaporization chamber 21 and the carrier gas delivery pipeline 12 can be arranged in the following manner: on the basis of ensuring that the carrier gas delivery pipeline 12 is located upstream of the vaporization chamber 21, the carrier gas delivery pipeline 12 can be located above the vaporization chamber 21, so as to facilitate the preheated carrier gas to fully carry the source material vapor. Further, the length direction of the vaporization chamber 21 and the axial direction of the carrier gas delivery pipeline 12 can be arranged in parallel, and the axial direction of the carrier gas outlet 10 and the axial direction of the vapor outlet 20 have an angle (that is, the two are not parallel), and the angle can be, for example, 90° or can be adjusted according to actual needs.

[0083] In some embodiments (2), see Figure 5 and Figure 6The carrier gas preheating unit 100 and the source material vaporization unit 200 are both located outside the vapor distribution unit 300. The source material vaporization unit 200 includes a vaporization chamber 21. The vaporization chamber 21 has a vapor outlet 20. A source material vaporizer 23 is disposed inside the vaporization chamber 21. The source material vaporizer 23 is used to sublimate the solid source material to form source material vapor. The vapor transport deposition device also includes a distributor 33. The distributor 33 is at least partially located inside the chamber of the vapor distribution unit 300 and has a discharge port 331. The discharge port 331 is located above the vapor distribution outlet 30. The distributor 33 is respectively connected to the carrier gas outlet 10 of the carrier gas preheating unit 100 and the vapor outlet 20 of the source material vaporization unit 200. Among them, Figure 5 is an exemplary cross-sectional view of the vapor transport deposition apparatus, Figure 6 for Figure 5 An exemplary structure of a vapor transport deposition apparatus is shown.

[0084] For embodiment (2), the distributor 33 may also include a portion located outside the chamber of the steam distribution unit 300, which portion may be, for example, a pipe joint (eg, a two-way pipe joint) to facilitate fixed connection with different pipelines.

[0085] The carrier gas preheating unit 100 may be as shown above, including a carrier gas chamber 11, a carrier gas delivery pipeline 12 connected to the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas delivery pipeline 12. The carrier gas delivery pipeline 12 is located outside the chamber of the steam distribution unit 300, and the end of the carrier gas delivery pipeline 12 may be used as a carrier gas outlet 10 to communicate with one of the interfaces of the pipe joint of the distributor 33.

[0086] The vaporization chamber 21 may be any chamber structure capable of carrying the source material vaporizer 23, and the vaporization chamber 21 may be provided with a heat preservation structure to achieve heat preservation of the source material vapor. The vapor outlet 20 may be provided on the cavity wall of the vaporization chamber 21, for example, the top of the cavity wall, and the vapor outlet 20 may be connected to another interface of the distributor 33 through a connecting pipe. For this example, the source material vaporizer 23 may be a crucible (for example, a crucible with an open top), an evaporation boat, etc.

[0087] The working principle of the above embodiment (2) is as follows: the carrier gas preheating unit 100 delivers the preheated carrier gas to the distributor 33 through its carrier gas outlet 10, and at the same time, the source material vapor generated by the source material vaporization unit 200 is delivered to the distributor 33 through its vapor outlet 20. The preheated carrier gas and the source material vapor are fully mixed in the distributor 33, and under the carrying effect of the carrier gas, they are delivered to the chamber of the vapor distribution unit 300 from the outlet 331 of the distributor 33, and finally ejected from the vapor distribution outlet 30 and deposited on the substrate 40 of the deposition unit 400.

[0088] The advantage of implementation scheme (2) is that the carrier gas preheating unit 100 and the source material vaporization unit 200 are located outside the chamber of the vapor distribution unit 300, which is convenient for maintenance and replacement of the two on the one hand, and is more advantageous for the flexible layout and expansion of the vapor transport deposition device on the other hand, so that the position and quantity of the carrier gas preheating unit 100 and the material vaporization unit can be flexibly arranged according to different process requirements and site conditions, and it is also convenient to monitor and control the operation process of the carrier gas preheating unit 100 and the source material vaporization unit 200.

[0089] The distributor 33 is provided with a first feed port and a second feed port, and both the first feed port and the second feed port are located outside the chamber of the steam distribution unit 300. The distributor 33 is connected to the carrier gas outlet 10 of the carrier gas preheating unit 100 through the first feed port, and is connected to the steam outlet 20 of the source material gasification unit 200 through the second feed port. The first feed port is located upstream of the second feed port.

[0090] The distributor 33 may be adaptively designed according to the chamber structure of the steam distribution unit 300. For example, the distributor 33 may be tubular, hollow plate-shaped, or have a chamber structure with a specific geometric shape.

[0091] For example, Figure 1 The example shows that the distributor 33 is tubular, the end of the distributor 33 is closed, and multiple discharge ports 331 are arranged on the tube wall of the tubular distributor 33 at intervals along the axial direction. This solution has the advantages of simple structure, good mixing effect, and high gas distribution uniformity, so as to ensure that the carrier gas carrying the source material vapor is evenly transported to the chamber of the vapor distribution unit 300.

[0092] Furthermore, the discharge ports 331 may be arranged as at least one group along the circumferential direction of the distributor 33 , and each group of discharge ports 331 includes a plurality of discharge ports 331 spaced apart along the axial direction of the distributor 33 , so as to improve the discharge effect.

[0093] In some examples, the distributor 33 can be arranged in an adjustable position inside the chamber of the steam distribution unit 300, so that the discharge angle can be adjusted to avoid uneven distribution or local air flow turbulence. Taking the tubular distributor 33 as an example, when the tubular distributor 33 rotates with its axis as the rotation axis, its rotation angle can be changed, that is, the tubular distributor 33 is rotatably arranged in the chamber of the steam distribution unit 300, so that the tubular distributor 33 can be rotated to adjust the gas purge angle.

[0094] Furthermore, as attached Figure 7As shown, the vapor transport deposition device involved in this embodiment (2) also includes: a carrier gas redistributor 34, which is located inside the chamber of the vapor distribution unit 300 and above the distributor 33; the carrier gas redistributor 34 has a carrier gas inlet 341 and a carrier gas distribution port 342, the carrier gas inlet 341 is connected to the carrier gas outlet 10 of the carrier gas preheating unit 100, and the carrier gas distribution port 342 is used to provide carrier gas to the chamber of the vapor distribution unit 300.

[0095] For this implementation plan, as shown in the attached Figure 7 As shown, the carrier gas delivery pipeline 12 of the carrier gas preheating unit 100 can be set to two routes arranged in parallel, one of which is connected to the distributor 33, and the other is connected to the carrier gas redistributor 34.

[0096] By further providing a carrier gas redistributor 34, on the one hand, the carrier gas can be secondary distributed and adjusted, which helps to stabilize the entire vapor transport deposition process. When the carrier gas flow rate or pressure of the carrier gas preheating unit 100 fluctuates or the pressure of the mixed gas output by the vapor distribution outlet 30 fluctuates, the carrier gas redistributor 34 can buffer and adjust these fluctuations to a certain extent, so that the carrier gas entering the distributor 33 and the vapor distribution unit 300 remains relatively stable, thereby improving the stability and repeatability of the process. On the other hand, part of the carrier gas from the carrier gas preheating unit 100 can be evenly distributed to the chamber of the vapor distribution unit 300 through its carrier gas distribution port 342, so that the carrier gas forms a more uniform flow field in the chamber, fully contacts and mixes with the source material vapor, and improves the mixing uniformity and efficiency. On the other hand, the carrier gas redistributor 34 provides an additional carrier gas flow adjustment point. By adjusting parameters such as the size, number or angle of the carrier gas distribution port 342 of the carrier gas redistributor 34, the carrier gas flow and flow direction entering the chamber of the vapor distribution unit 300 can be flexibly controlled to adapt to different source materials, deposition processes and deposition rate requirements.

[0097] The carrier gas redistributor 34 may be adaptively designed according to the chamber structure of the vapor distribution unit 300. For example, the carrier gas redistributor 34 may be tubular, hollow plate-shaped, or have a chamber structure with a specific geometric shape.

[0098] For example, Figure 7 The example shows a tubular carrier gas redistributor 34, the end of which is closed and a plurality of carrier gas distribution ports 342 are arranged at intervals along the axial direction on the wall of the tubular carrier gas redistributor 34, so as to achieve a more uniform redistribution of the carrier gas. When the carrier gas redistributor 34 is tubular, it can share a pipeline with the corresponding carrier gas delivery pipeline 12.

[0099] Furthermore, a gas flow regulator is provided for the carrier gas redistributor 34 , and the gas flow regulator is used to adjust the delivery flow of the carrier gas in the carrier gas redistributor 34 to enhance its adaptability to different usage scenarios.

[0100] In some embodiments (3), see Figure 8 The carrier gas preheating unit 100 and the source material vaporization unit 200 are both located outside the vapor distribution unit 300. The source material vaporization unit 200 includes a vaporization chamber 21, the vaporization chamber 21 has a vapor outlet 20, and a source material vaporizer 23 is arranged inside the vaporization chamber 21. The source material vaporizer 23 is used to sublimate the solid source material to form source material vapor. The vapor transport deposition device also includes a carrier gas distributor 35 and a gaseous source distributor 36. The carrier gas distributor 35 is located upstream of the gaseous source distributor 36. The inlet of the carrier gas distributor 35 is connected to the carrier gas outlet 10 of the carrier gas preheating unit 100. The carrier gas distributor 35 also has a carrier gas distribution outlet 351. The inlet of the gaseous source distributor 36 is connected to the vapor outlet 20 of the source material vaporization unit 200. The gaseous source distributor 36 also has a gaseous source distribution outlet 361.

[0101] For embodiment (3), the carrier gas distributor 35 and the gaseous source distributor 36 may each further include a portion located outside the chamber of the vapor distribution unit 300, which portion may be, for example, a pipe joint.

[0102] The carrier gas preheating unit 100 may be as shown above, including a carrier gas chamber 11, a carrier gas delivery pipeline 12 connected to the carrier gas chamber 11, and a first heating element 13 assembled to the carrier gas delivery pipeline 12. The carrier gas delivery pipeline 12 is located outside the chamber of the vapor distribution unit 300, and the end of the carrier gas delivery pipeline 12 may be used as a carrier gas outlet 10 to communicate with the carrier gas distributor 35.

[0103] The vaporization chamber 21 may be any chamber structure capable of carrying the source material vaporizer 23, and the vaporization chamber 21 may be provided with a heat preservation structure to achieve heat preservation of the source material vapor. The vapor outlet 20 may be provided on the cavity wall of the vaporization chamber 21, for example, at the top of the cavity wall, and the vapor outlet 20 may be connected to the gaseous source distributor 36 through a connecting pipe. For this example, the source material vaporizer 23 may be a crucible (for example, a crucible with an open top), an evaporation boat, etc.

[0104] The working principle of the above embodiment (3) is as follows: the carrier gas preheating unit 100 delivers the preheated carrier gas to the carrier gas distributor 35 through its carrier gas outlet 10, and the carrier gas is distributed to the chamber of the vapor distribution unit 300 from the carrier gas distribution outlet 351 of the carrier gas distributor 35. At the same time, the source material vapor generated by the source material vaporization unit 200 is delivered to the gas source distributor 36 through its vapor outlet 20, and the source material vapor is distributed to the chamber of the vapor distribution unit 300 from the gas source distribution outlet 361 of the gas source distributor 36. The preheated carrier gas and the source material vapor are fully mixed in the chamber of the vapor distribution unit 300, and are finally ejected from the vapor distribution outlet 30 and deposited on the substrate 40 of the deposition unit 400 under the carrying effect of the carrier gas.

[0105] The advantages of the above embodiment (3) are that the carrier gas distributor 35 can distribute the carrier gas to each area evenly and accurately according to the set parameters such as flow rate and pressure, and the gas source distributor 36 can also play the same role for the gas source material, and the carrier gas distributor 35 and the gas source distributor 36 can be controlled separately. Therefore, accurate gas distribution and sufficient mixing are achieved through the carrier gas distributor 35 and the gas source distributor 36, making the deposition process more uniform, stable and controllable, and improving the composition uniformity and consistency of the deposited film.

[0106] The carrier gas distributor 35 can be adaptively designed according to the chamber structure of the steam distribution unit 300. For example, the carrier gas distributor 35 can be tubular, hollow plate-shaped, or have a chamber structure with a specific geometric shape.

[0107] For example, Figure 8 The example shows that the carrier gas distributor 35 is tubular, the end of the carrier gas distributor 35 is closed, and multiple carrier gas distribution outlets 351 are arranged on the tube wall of the tubular carrier gas distributor 35 at intervals along the axial direction. This solution has the advantages of simple structure, good mixing effect, and high gas distribution uniformity, so as to ensure that the carrier gas carrying the source material vapor is evenly transported to the chamber of the vapor distribution unit 300.

[0108] Furthermore, the carrier gas distribution outlets 351 can be arranged as at least one group along the circumferential direction of the tubular carrier gas distributor 35, and each group of carrier gas distribution outlets 351 includes a plurality of carrier gas distribution outlets 351 spaced apart and distributed along the axial direction of the tubular carrier gas distributor 35 to improve the discharge effect.

[0109] The gas source distributor 36 is located below the carrier gas distributor 35, and the gas source distributor 36 can be adaptively designed according to the chamber structure of the vapor distribution unit 300. For example, the gas source distributor 36 can be tubular, hollow plate-shaped, or have a chamber structure with a specific geometric shape.

[0110] For example, Figure 8 The example shows that the gas source distributor 36 is tubular, the end of the gas source distributor 36 is closed, and a plurality of gas source distribution outlets 361 are arranged at intervals along the axial direction on the tube wall of the tubular gas source distributor 36. This solution has the advantages of simple structure, good mixing effect, high gas distribution uniformity, etc., to ensure that the source material vapor is uniformly transported to the chamber of the vapor distribution unit 300.

[0111] Furthermore, the gas source distribution outlets 361 can be arranged as at least one group along the circumferential direction of the tubular gas source distributor 36, and each group of gas source distribution outlets 361 includes a plurality of gas source distribution outlets 361 spaced apart and distributed along the axial direction of the tubular gas source distributor 36 to improve the discharge effect.

[0112] As mentioned above, the carrier gas distributor 35 is located upstream of the gas source distributor 36, that is, the carrier gas distribution outlet 351 is located upstream of the gas source distribution outlet 361, to ensure that the source material vapor can be fully and effectively carried by the carrier gas. For the absolute positions of the carrier gas distributor 35 and the gas source distributor 36, one embodiment can be referred to Figure 8 , which illustrates that the carrier gas distributor 35 is located above the gas source distributor 36. Of course, it is not excluded that the carrier gas distributor 35 may also be located at the same horizontal position as the gas source distributor 36, or the carrier gas distributor 35 may also be located below the gas source distributor 36.

[0113] In some examples, at least one of the carrier gas distributor 35 and the gaseous source distributor 36 can be arranged in an adjustable position inside the chamber of the steam distribution unit 300. For example, both the carrier gas distributor 35 and the gaseous source distributor 36 are arranged in an adjustable position inside the chamber of the steam distribution unit 300. The adjustable position of the carrier gas distributor 35 and / or the gaseous source distributor 36 is conducive to adjusting the discharge angle and avoiding uneven distribution or local airflow turbulence.

[0114] Taking the tubular carrier gas distributor 35 and / or the tubular gas source distributor 36 as an example, when the distributor rotates with its axis as the axis, its rotation angle can change, that is, the tubular distributor can be rotatably arranged in the chamber of the steam distribution unit 300, so that the tubular distributor can be rotated to adjust the delivery angle of the discharge material.

[0115] It should be noted that the end of the pipeline involved in the above-mentioned embodiment of the present disclosure refers to the downstream port of the pipeline. By closing the downstream port of the pipeline (i.e., the end is closed), it is ensured that the gas is evenly distributed through the multiple outlets set on the pipe wall.

[0116] For any of the above-mentioned vapor transport deposition devices, the chamber of the vapor distribution unit 300 can be selected according to actual needs. For example, the chamber of the vapor distribution unit 300 can be a hollow cylindrical, hollow elliptical cylindrical, hollow prism-shaped or other shaped chamber structure, wherein the vapor distribution outlet 30 can be arranged on the bottom wall of the chamber of the vapor distribution unit 300, and a plurality of vapor distribution outlets 30 can be arranged to improve uniformity. The vapor distribution outlet 30 can be designed to be nozzle-shaped (e.g., strip slits, circular holes, elliptical holes, fan-shaped holes or other special-shaped holes, etc.), so as to ensure that the mixed gas of the carrier gas and the source material vapor is quickly sprayed onto the surface of the substrate 40 in the desired direction, and in the process of the mixed gas being sprayed out from the vapor distribution outlet 30, it can further achieve uniform dispersion and promote the uniformity of vapor deposition. As for the deposition unit 400, it is used to receive the carrier gas and the source material vapor and implement deposition.

[0117] In some examples, such as the attached Figure 5 , 7 Alternatively, as shown in FIG8 , the deposition unit 400 includes: a deposition chamber 41 and a stage 42, the vapor distribution unit 300 is located inside the deposition chamber 41, or the vapor distribution unit 300 is fixedly connected to the deposition chamber 41 so that the vapor distribution outlet 30 is accommodated inside the deposition chamber 41; the stage 42 is movably located inside the deposition chamber 41 and arranged facing the vapor distribution outlet 30, and the stage 42 is used to carry the substrate 40.

[0118] The stage 42 is movably arranged so as to enter or exit the deposition chamber 41, so as to conveniently operate the substrate 40 thereon. When used, the carrier gas carries the source material vapor and is transported from the vapor distribution outlet 30 to the substrate 40 in the deposition chamber 41 to implement vapor deposition. The arrangement of the deposition chamber 41 is designed according to the actual type of vapor deposition. For example, for vapor deposition that needs to be performed under vacuum conditions, the deposition chamber 41 can be set as a vacuum chamber. The embodiment of the present disclosure does not specifically limit the arrangement of the deposition chamber 41.

[0119] In some examples, the vapor distribution unit 300 can be located in the deposition chamber 41, which is conducive to reducing the footprint of the vapor transport deposition device, saving space and improving integration. In addition, since the vapor distribution unit 300 is directly located in the chamber of the deposition unit 400, it is conducive to shortening the gas transmission path and reducing the loss and diffusion of the gas during the transmission process.

[0120] In other examples, the steam distribution unit 300 is fixedly connected to the deposition chamber 41 so that the steam distribution outlet 30 is accommodated in the deposition chamber 41, that is, the steam distribution unit 300 and the deposition unit 400 are relatively independent of each other, which not only facilitates separate maintenance and adjustment of the two, but also can achieve effective thermal isolation and physical isolation, for example, effectively reducing the risk of cross contamination between the two units.

[0121] The steam distribution unit 300 may be arranged independently of or integrated with the deposition unit 400 according to actual application scenarios and actual needs.

[0122] In combination with any of the above-mentioned vapor transport deposition devices, the respective quantities of the carrier gas preheating unit 100, the source material vaporization unit 200, the steam distribution unit 300 and the deposition unit 400 can be designed according to actual production requirements, which are exemplarily described below in conjunction with the accompanying drawings.

[0123] See also Figure 3 , which illustrates that the carrier gas preheating unit 100, the source material vaporization unit 200, the vapor distribution unit 300 and the deposition unit 400 are arranged in a one-to-one correspondence, the carrier gas preheating unit 100 and the source material vaporization unit 200 are connected to the vapor distribution unit 300, and the vapor distribution unit 300 is connected to the deposition unit 400.

[0124] See also Fig. 9 , which illustrates that the carrier gas preheating unit 100 and the source material vaporization unit 200 constitute a first combination unit, multiple first combination units are arranged in parallel, and the multiple first combination units arranged in parallel are all connected to the same vapor distribution unit 300, and the vapor distribution unit 300 is connected to the deposition unit 400.

[0125] See also Fig.10 , which illustrates that the carrier gas preheating unit 100 , the source material vaporization unit 200 and the vapor distribution unit 300 constitute a second assembly unit, a plurality of second assembly units are arranged in parallel, and the plurality of second assembly units arranged in parallel are all connected to the same deposition unit 400 .

[0126] Any of the above-mentioned vapor transport deposition devices involved in the embodiments of the present disclosure can be used to prepare various types of semiconductor films, for example, it can be used to prepare perovskite films. The vapor transport deposition device solves the problems of low coating rate and low degree of freedom in film deposition control in the current dry coating process. On the basis of improving the film deposition efficiency, the film morphology is more accurately controlled, which is conducive to obtaining high-quality films. The above is more advantageous for realizing film morphology control based on dry process in large-scale mass production of semiconductor films, improving the quality of semiconductor films, such as perovskite films, improving production efficiency, and reducing costs.

[0127] On the other hand, an embodiment of the present disclosure further provides a vapor deposition method, which is applied to any of the vapor transport deposition devices mentioned above.

[0128] The vapor deposition method provided by the embodiment of the present disclosure has all the advantages of the vapor transport deposition device mentioned above, which will not be described in detail here.

[0129] The above description is only for the purpose of facilitating those skilled in the art to understand the technical solution of the present disclosure and is not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A vapor transport deposition device, characterized in that: The vapor transport deposition device comprises: a carrier gas preheating unit (100), a source material gasification unit (200), a vapor distribution unit (300) and a deposition unit (400); The carrier gas preheating unit (100) has a carrier gas outlet (10), the carrier gas outlet (10) is connected to the chamber of the vapor distribution unit (300), and the carrier gas preheating unit (100) is used to transport the preheated carrier gas to the chamber of the vapor distribution unit (300) through the carrier gas outlet (10); The source material vaporization unit (200) has a vapor outlet (20), the vapor outlet (20) is connected to the chamber of the vapor distribution unit (300), and the source material vaporization unit (200) is used to transport source material vapor to the chamber of the vapor distribution unit (300) through the vapor outlet (20); The vapor distribution unit (300) has a vapor distribution outlet (30), and the vapor distribution outlet (30) is arranged facing the deposition unit (400); The vapor outlet (20) is located downstream of the carrier gas outlet (10), and the vapor distribution outlet (30) is located downstream of the vapor outlet (20), so that the carrier gas carries the source material vapor to the vapor distribution outlet (30).

2. The vapor transport deposition device according to claim 1, characterized in that: The carrier gas preheating unit (100) comprises a carrier gas chamber (11), a carrier gas delivery pipeline (12) connected to the carrier gas chamber (11), and a first heating element (13) assembled to the carrier gas delivery pipeline (12); The carrier gas chamber (11) is used to store the carrier gas, the carrier gas delivery pipeline (12) is used to deliver the carrier gas, the first heating element (13) is used to heat the carrier gas delivered in the carrier gas delivery pipeline (12), and the first heating element (13) is also electrically connected to a control system of the gas transport deposition device, and the control system is used to control the operation of the first heating element (13).

3. The vapor transport deposition device according to claim 2, characterized in that: The carrier gas preheating unit (100) further comprises a carrier gas flow rate regulating component arranged on the carrier gas delivery pipeline (12), and the carrier gas flow rate regulating component is also electrically connected to the control system of the gas phase transport deposition device.

4. The vapor transport deposition device according to claim 1, characterized in that: The source material vaporization unit (200) comprises: a vaporization chamber (21), and a second heating element (22) assembled to the vaporization chamber (21), wherein the vaporization chamber (21) is used to generate the source material vapor and is provided with the vapor outlet (20), and the second heating element (22) is also electrically connected to a control system of the vapor transport deposition device, and the control system is used to control the operation of the second heating element (22).

5. The vapor transport deposition device according to any one of claims 1 to 4, characterized in that: The carrier gas preheating unit (100) comprises a carrier gas delivery pipeline (12), wherein the carrier gas delivery pipeline (12) is partially located in the chamber of the steam distribution unit (300), the end of the pipe section of the carrier gas delivery pipeline (12) located in the chamber of the steam distribution unit (300) is closed, and a plurality of carrier gas outlets (10) are arranged on the pipe wall at intervals in the axial direction; The source material gasification unit (200) comprises a gasification chamber (21), the gasification chamber (21) is located in the chamber of the steam distribution unit (300), and the steam outlet (20) is opened in the gasification chamber (21).

6. The vapor transport deposition device according to claim 5, characterized in that: The carrier gas delivery pipeline (12) is arranged in a positionally adjustable manner in the chamber of the steam distribution unit (300).

7. The vapor transport deposition device according to claim 5, characterized in that: The vapor distribution unit (300) comprises a first baffle (31) and a second baffle (32), at least one of the first baffle (31) and the second baffle (32) is arranged obliquely, and a transmission channel is formed between the first baffle (31) and the second baffle (32), and the transmission channel is used for the transmission of carrier gas and source material vapor; The size of the second end of the transport channel close to the vapor distribution outlet (30) is smaller than the size of the first end of the transport channel close to the source material vaporization unit (200).

8. The vapor transport deposition device according to claim 5, characterized in that: The vaporization chamber (21) is a crucible, and a slit is provided on the top of the crucible as the vapor outlet (20).

9. The vapor transport deposition device according to any one of claims 5 to 8, characterized in that: A mixing structure is provided in the chamber of the vapor distribution unit (300), and the mixing structure is located downstream of the vapor outlet (20) and upstream of the vapor distribution outlet (30), and is used to promote mixing of the carrier gas and the source material vapor.

10. The vapor transport deposition device according to any one of claims 1 to 4, characterized in that: The carrier gas preheating unit (100) and the source material gasification unit (200) are both located outside the vapor distribution unit (300); The source material vaporization unit (200) comprises a vaporization chamber (21) having a vapor outlet (20), a source material vaporizer (23) is arranged inside the vaporization chamber (21), and the source material vaporizer (23) is used to sublime the solid source material; The vapor transport deposition device also includes a distributor (33), which is at least partially located inside the chamber of the vapor distribution unit (300), and the distributor (33) has an outlet (331) and the outlet (331) is located above the vapor distribution outlet (30), and the distributor (33) is respectively connected to the carrier gas outlet (10) of the carrier gas preheating unit (100) and the vapor outlet (20) of the source material vaporization unit (200).

11. The vapor transport deposition device according to claim 10, characterized in that: The distributor (33) is tubular, and a plurality of discharge ports (331) are sealed at the end of the distributor (33) and are arranged on the tube wall of the distributor (33) at intervals along the axial direction.

12. The vapor transport deposition device according to any one of claims 10 to 11, characterized in that: The vapor transport deposition device further comprises: a carrier gas redistributor (34), the carrier gas redistributor (34) being located inside the chamber of the vapor distribution unit (300) and above the distributor (33); The carrier gas redistributor (34) has a carrier gas inlet (341) and a carrier gas distribution port (342), wherein the carrier gas inlet (341) is connected to the carrier gas outlet (10) of the carrier gas preheating unit (100), and the carrier gas distribution port (342) is used to provide carrier gas to the chamber of the vapor distribution unit (300).

13. The vapor transport deposition device according to any one of claims 1 to 4, characterized in that: The carrier gas preheating unit (100) and the source material gasification unit (200) are both located outside the vapor distribution unit (300); The source material vaporization unit (200) comprises a vaporization chamber (21) located outside the vapor distribution unit (300), and the vaporization chamber (21) has a vapor outlet (20), and a source material vaporizer (23) is arranged inside the vaporization chamber (21), and the source material vaporizer (23) is used to sublime the solid source material; The vapor transport deposition device also includes a carrier gas distributor (35) and a gaseous source distributor (36), wherein the carrier gas distributor (35) is located upstream of the gaseous source distributor (36), the inlet of the carrier gas distributor (35) is connected to the carrier gas outlet (10) of the carrier gas preheating unit (100), and the carrier gas distributor (35) also has a carrier gas distribution outlet (351), the inlet of the gaseous source distributor (36) is connected to the vapor outlet (20) of the source material vaporization unit (200), and the gaseous source distributor (36) also has a gaseous source distribution outlet (361).

14. The vapor transport deposition device according to claim 13, characterized in that: The carrier gas distributor (35) is tubular, the end of the carrier gas distributor (35) is closed, and a plurality of carrier gas distribution outlets (351) are arranged on the tube wall of the carrier gas distributor (35) at intervals along the axial direction; The gas source distributor (36) is tubular, the end of the gas source distributor (36) is closed, and a plurality of gas source distribution outlets (361) are arranged at intervals along the axial direction on the tube wall of the gas source distributor (36).

15. The vapor transport deposition device according to any one of claims 1 to 14, characterized in that: The deposition unit (400) comprises: a deposition chamber (41) and a stage (42); the vapor distribution unit (300) is located inside the deposition chamber (41); or the vapor distribution unit (300) is fixedly connected to the deposition chamber (41) so that the vapor distribution outlet (30) is accommodated inside the deposition chamber (41); The stage (42) is located inside the deposition chamber (41) and arranged facing the vapor distribution outlet (30), and the stage (42) is used to carry the substrate (40).

16. A vapor deposition method, characterized in that: The vapor deposition method is applied to the vapor transport deposition device described in any one of claims 1-15.

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