CVD (Chemical Vapor Deposition) machine table and CVD equipment

Abstract

The invention provides a CVD machine table and CVD equipment, the CVD machine table comprises a machine table body, a heating disc, a direct current negative pressure assembly and a direct current power supply, the direct current power supply is electrically connected with the direct current negative pressure assembly, the machine table body is provided with an accommodating cavity with a first opening, the heating disc is connected in the accommodating cavity, the direct current negative pressure assembly is connected to the heating disc, and the direct current negative pressure assembly is electrically connected with the direct current power supply. After the direct-current negative-pressure assembly is connected with a direct-current power supply, negative voltage acting on the direct-current negative-pressure assembly can accumulate a large number of negative charges on the direct-current negative-pressure assembly, the negative charges are distributed in the space around the surface of the conducting ring, and therefore an electric field is formed in the space around the direct-current negative-pressure assembly; under the action of repulsive force between charges of the same type, the particulate matter can move in the direction away from the direct-current negative pressure assembly or suspend in the electric field, so that the particulate matter can be cleaned through nitrogen subsequently.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor production technology, and more specifically, to a CVD machine and CVD equipment. Background Art

[0002] CVD (Chemical Vapor DepoEition) equipment is a device used to deposit thin films on the surface of wafers. During the processing of wafers using CVD equipment, after the wafers are cleaned with plasma, the RF Power (Radio Frequency Power) that provides high-frequency electromagnetic waves needs to be turned off to facilitate nitrogen cleaning of the wafers. The above technical solution has the following problems: due to the disappearance of the self-bias voltage on the wafer surface, particles that are repelled from the edge of the wafer by the sheath (the electric field area formed when charged particles such as electrons and ions in the plasma approach the wafer surface) and carry negative charges will fall on the edge of the wafer during the cleaning process, and at this time, the particles are difficult to be cleaned from the wafer by nitrogen cleaning. Summary of the invention

[0003] The purpose of the embodiments of the present application is to provide a CVD machine and CVD equipment. By setting a DC negative pressure component in the CVD machine, the DC negative pressure component generates an electric field containing the same type of charge as the particles, so as to solve the technical problem of charged particles falling to the edge of the wafer.

[0004] To achieve the above objectives, the first aspect of the present application is to provide a CVD machine, comprising: The machine body is provided with a receiving cavity having a first opening. A heating plate, accommodated in the accommodating cavity, and used for carrying the target wafer; A DC negative pressure component is arranged in an annular structure and is arranged on the heating plate, wherein the outer diameter of the DC negative pressure component is larger than the diameter of the target wafer, and the inner diameter of the DC negative pressure component is smaller than the diameter of the target wafer; A DC power supply, electrically connected to the DC negative pressure component; When the DC power supply is connected to the DC negative pressure component, negative charges are accumulated on the DC negative pressure component, and the negative charges are of the same type as the negative charges on the particles. The particles are separated from the target wafer by the repulsive force between charges of the same type as the negative charges.

[0005] With the above technical solution, after the target wafer is plasma cleaned, the plasma used to clean the target wafer is composed of free electrons, positive ions and neutral particles (such as gas molecules). In the plasma, since the density of electrons is higher than that of ions, it is easier for electrons to combine with particles in the cleaning chamber where the machine body is located. Since free electrons are negatively charged, the particles will be negatively charged after the surface of the particles combines with the free electrons.

[0006] After the DC negative voltage component is powered on, the negative voltage acting on the DC negative voltage component will accumulate a large amount of negative charges (electrons) on the DC negative voltage component. These negative charges are distributed in the space around the surface of the conductive ring, thereby forming an electric field in the space around the DC negative voltage component, and the electric field direction of the electric field points to the DC negative voltage component.

[0007] When the edge of the target wafer and the negatively charged particles located on the side of the edge away from the DC negative pressure component enter the electric field, the force exerted by the electric field on the particles in the vertical direction is opposite to the direction of the gravity of the particles. The force exerted by the electric field on the particles is set to F. According to Coulomb's law F=q*E and E=V / d, it can be seen that the force of the electric field on the particles can be adjusted to be greater than or equal to the gravity of the particles by adjusting the size of V, where q is the charge of the particles (negative charge), E is the strength of the electric field, V is the voltage applied to the DC negative pressure component, and d is the distance between the two electrodes.

[0008] When the force of the electric field on the particles is greater than or equal to the gravity of the particles, the particles will move in a direction away from the DC negative pressure component, or be suspended in the electric field, so that the particles can be subsequently cleaned by nitrogen.

[0009] The machine body is provided with a plurality of the accommodating cavities, which are arranged in a matrix on the machine body. Each of the accommodating cavities is connected to the heating plate, so that the CVD machine can coat a plurality of the target wafers at the same time.

[0010] Optionally, the CVD machine further comprises: A current-carrying ring connected to the side wall of the accommodating cavity and sleeved on the outer side of the heating plate, wherein the DC negative pressure component is connected to the current-carrying ring; Along the axial direction of the heating disk, the current-carrying ring has a first position and a second position relative to the heating disk, and the current-carrying ring moves relative to the heating disk between the first position and the second position; When the current-carrying ring is in the first position, the DC negative pressure component is separated from the target wafer, and the DC power supply is disconnected from the DC negative pressure component; When the current-carrying ring is in the second position, the DC negative-pressure component abuts against the target wafer, and the DC power supply is connected to the DC negative-pressure component.

[0011] By adopting the above technical scheme, the current-carrying ring is connected to the side wall of the accommodating cavity, and can move relative to the current-carrying ring along the axial direction of the heating plate, or can drive the current-carrying ring to move relative to the heating plate along the axial direction of the heating plate by the machine body, so as to move the DC negative pressure component between the first position and the second position, thereby making the target wafer abut against or separate from the DC negative pressure component, so that the current-carrying ring drives the target wafer into the electric field generated by the DC negative pressure component, or separates from the electric field generated by the DC negative pressure component.

[0012] When the chamber in which the CVD machine is located is in the process of plasma gas cleaning of the target wafer and deposition on the target wafer, the current-carrying ring is in the first position. At this time, the DC negative pressure component is separated from the target wafer, and the DC negative pressure component is disconnected from the DC power supply to maintain the uniformity and stability of the electric field in the chamber during the deposition process, thereby reducing the interference of the electric field formed on the DC negative pressure component on the distribution of deposited materials on the surface of the target wafer and the quality of the thin film, improving the quality and uniformity of the deposited thin film, and avoiding the adverse effect of the unstable electric field in the chamber in which the CVD machine is located on the deposition of the thin film.

[0013] When the chamber where the CVD machine is located completes the deposition process on the target wafer and the target wafer needs to be purged with nitrogen, the current-carrying ring is in the second position. At this time, the DC negative pressure component is connected to the DC power supply, and the DC negative pressure component is in contact with the target wafer, so that the edge of the target wafer enters the electric field generated by the DC negative pressure component to prevent the negatively charged particles from falling on the edge of the target wafer.

[0014] Optionally, the DC negative pressure component includes: A conductive coil is connected to the current-carrying ring and sleeved on the outside of the heating plate, and the conductive coil is electrically connected to the DC power supply; A metal ring, electrically connected to the conductive coil and sleeved on the outer side of the heating plate, wherein the outer diameter of the metal ring is larger than the diameter of the target wafer, and the inner diameter of the metal ring is smaller than the diameter of the target wafer, and the metal ring is used to separate from or abut against the target wafer; When separated from the target wafer, the metal ring is disconnected from the DC power supply; When in contact with the target wafer, the DC power source is turned on to accumulate the negative charges.

[0015] By adopting the above technical solution, the inner diameter of the metal ring is smaller than the diameter of the target wafer, and the outer diameter of the metal ring is larger than the diameter of the target wafer. When the conductive coil is connected to the DC power supply, the current passes through the conductive coil into the metal ring to generate an electric field on the metal ring.

[0016] Driven by the current-carrying ring, when the target wafer contacts the metal ring, the target wafer enters the electric field generated on the metal ring.

[0017] Optionally, the metal ring is made of aluminum alloy.

[0018] By adopting the above technical solution, the metal ring is made of aluminum alloy. After the direct current power supply is connected, a stable electric field can be formed on the metal ring, thereby avoiding inconsistent deposition caused by uneven electric field, thereby ensuring the uniformity of the deposition process and improving the quality of the thin film.

[0019] At the same time, the metal ring made of aluminum alloy forms a natural oxide film on its surface, which has good corrosion resistance to prevent nitrogen from corroding the metal ring when nitrogen is purged on the target wafer, thereby improving the long-term stability and reliability of the equipment and reducing the maintenance and replacement frequency of the metal ring.

[0020] Optionally, a receiving groove having a second opening is provided on a side of the current-carrying ring facing away from the target wafer, and the second opening faces the inner side of the current-carrying ring; The conductive coil is installed in the receiving groove and partially extends to the outside of the receiving groove. The outer wall of the metal ring is connected to the portion of the conductive coil extending to the outside of the receiving groove, so that the metal ring is electrically connected to the conductive coil.

[0021] With the above technical solution, the second opening of the accommodating groove is arranged on the inner side of the current-carrying ring, and the inner side of the conductive coil extends to the outer side of the accommodating groove, that is, the inner side wall of the conductive coil is located on the outer side of the accommodating groove.

[0022] The outer side wall of the conductive coil abuts against the bottom wall of the receiving groove, so that the outer side wall of the conductive coil is covered by the bottom wall of the receiving groove. The upper side wall of the conductive coil abuts against the upper side wall of the receiving groove, so that the upper side wall of the conductive coil is covered by the upper side wall of the receiving groove. The lower side wall of the conductive coil abuts against the lower side wall of the receiving groove, so that the lower side wall of the conductive coil is covered by the lower side wall of the receiving groove, thereby preventing the particles from accumulating on the conductive coil.

[0023] Optionally, the CVD machine further comprises: A conductive column has one end electrically connected to the DC power supply and the other end electrically connected to the conductive coil.

[0024] According to the above technical solution, the conductive column is made of conductive metal, such as aluminum alloy. The length direction of the conductive column extends along the radial direction of the heating plate, one end of the conductive column in the length direction is fixedly connected to the machine body and electrically connected to the DC power supply, and the other end is electrically connected to the conductive coil, so as to replace the connecting column made of aluminum nitride ceramic material used to fix the current-carrying ring on the machine in the existing CVD machine.

[0025] Optionally, there are multiple conductive pillars, and the multiple conductive pillars are evenly spaced along the circumference of the heating plate.

[0026] By adopting the above technical solution, by setting a plurality of the conductive columns evenly spaced along the circumference of the heating plate, on the one hand, the reliability of the electrical connection between the conductive coil and the DC power supply is improved, and on the other hand, the stability of the connection between the current-carrying ring and the machine body is improved.

[0027] Optionally, the DC negative pressure component includes a conductive coil, and the conductive coil is electrically connected to the DC power supply; The heating plate is connected to the accommodating cavity, and the conductive coil is arranged in the heating plate and is located at a side of the heating plate close to the target wafer.

[0028] Optionally, when the DC negative pressure component includes a conductive coil and the conductive coil is disposed in the heating plate, the CVD machine further includes: A conductive column has one end electrically connected to the DC power supply and the other end electrically connected to the conductive coil. There are multiple conductive columns, and the multiple conductive columns are evenly spaced along the circumference of the heating plate.

[0029] The beneficial effect of the CVD machine provided by the present application is that: compared with the prior art, the CVD machine provided by the present application includes a machine body, a heating plate, a DC negative pressure component and a DC power supply, the DC power supply is electrically connected to the DC negative pressure component, the machine body is provided with a accommodating cavity with a first opening, the heating plate is connected to the accommodating cavity, the DC negative pressure component is connected to the heating plate, after the DC negative pressure component is connected to the DC power supply, the negative voltage acting on the DC negative pressure component will accumulate a large amount of negative charges on the DC negative pressure component, these negative charges are distributed in the space around the surface of the conductive ring, thereby forming an electric field in the space around the DC negative pressure component, because the particles also have negative charges, under the action of the repulsive force between charges of the same type, the particles will move in a direction away from the DC negative pressure component, or suspend in the electric field, so as to facilitate the subsequent cleaning of the particles by nitrogen.

[0030] In a second aspect, the present application provides a CVD device, comprising: A CVD machine, wherein the CVD machine is the CVD machine provided by any one of the above items.

[0031] The beneficial effect of the CVD machine provided by the present application is that: compared with the prior art, the CVD equipment provided by the present application includes any one of the above-mentioned CVD machines, the CVD machine includes a machine body, a heating plate, a DC negative pressure component and a DC power supply, the DC power supply is connected to the machine body and electrically connected to the DC negative pressure component, the machine body is provided with a receiving cavity with a first opening, the heating plate is connected to the receiving cavity, the DC negative pressure component is connected to the heating plate, after the DC negative pressure component is connected to the DC power supply, the negative voltage acting on the DC negative pressure component will accumulate a large amount of negative charges on the DC negative pressure component, these negative charges are distributed in the space around the surface of the conductive ring, thereby forming an electric field in the space around the DC negative pressure component, because the particles also have negative charges, under the action of the repulsive force between charges of the same type, the particles will move in a direction away from the DC negative pressure component, or suspend in the electric field, so as to facilitate the subsequent cleaning of the particles by nitrogen. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0033] Figure 1 A schematic diagram of the structure of the machine body provided in the embodiment of the present application; Figure 2 A schematic diagram of the structure of a heating plate provided in an embodiment of the present application; Figure 3 A schematic diagram of the structure of the current-carrying ring provided in an embodiment of the present application when it is in the first position; Figure 4 for Figure 3 A magnified view of the structure of the middle a part; Figure 5 A schematic diagram of the structure of the current-carrying ring used in the embodiment of the present application; Figure 6 A schematic diagram of the structure when the current-carrying ring provided in an embodiment of the present application is located in the second position; Figure 7 For along Figure 6 A magnified view of the structure in the middle b; Figure 8A schematic diagram of the structure of a conductive column provided in an embodiment of the present application; Fig. 9 A schematic structural diagram of a conductive column provided in another embodiment of the present application; Fig.10 A schematic diagram of the structure of a DC negative pressure component provided in another embodiment of the present application; Fig.11 A cross-sectional view of a DC negative pressure assembly provided in another embodiment of the present application.

[0034] 10. Machine body; 11. Accommodation cavity; 111. First opening; 20. Heating plate; 21. Plate body; 211. Second through hole; 22. Carrying part; 221. Accommodation space; 23. Shaft body; 231. Third through hole; 24. Cover plate; 25. Conductive slip ring; 30. DC negative pressure assembly; 31. Conductive coil; 32. Metal ring; 40. Target wafer; 50. Particles; 60. Current-carrying ring; 61. Accommodation groove; 62. Second opening; 63. First through hole; 70. Conductive column; 71. Abutment part; E. Electric field. DETAILED DESCRIPTION

[0035] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0036] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0037] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0038] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0039] Please refer to Figure 1 to Fig.11 , the CVD machine and CVD equipment provided in the embodiments of the present application are now described.

[0040] To achieve the above objectives, the first aspect of the present application is to provide a CVD machine, including a machine body 10, a heating plate 20, a DC negative pressure assembly 30 and a DC power supply.

[0041] See also Figure 1 The machine body 10 is provided with a receiving cavity 11 having a first opening 111 . The number of the receiving cavities 11 is multiple, and the multiple receiving cavities 11 are arranged in a matrix on the machine body 10 .

[0042] A heating plate 20 assembly is connected to each accommodating cavity 11 . The heating plate 20 assembly is used to carry the target wafer 40 .

[0043] See also Figure 2 and Figure 3 The heating plate 20 includes a plate body 21 and a bearing portion 22 extending axially along the plate body 21 . The diameter of the bearing portion 22 is smaller than the diameter of the plate body 21 , and the diameter of the bearing portion 22 is smaller than the diameter of the target wafer 40 . The bearing portion 22 is used to bear the target wafer 40 .

[0044] The DC negative pressure assembly 30 is arranged in an annular structure and is arranged on the bearing portion 22 on the heating plate 20. The outer diameter of the DC negative pressure assembly 30 is larger than the diameter of the target wafer 40, and the inner diameter of the DC negative pressure assembly 30 is smaller than the diameter of the target wafer 40. By making the diameter of the bearing portion 22 smaller than the diameter of the target wafer 40, the DC negative pressure assembly 30 is convenient to abut against the edge of the target wafer 40.

[0045] The DC power supply is electrically connected to the DC negative pressure assembly 30 , and the DC power supply can be disposed on the machine body 10 so that the DC power supply is fixed.

[0046] When the DC negative pressure component 30 is connected to the DC power supply, negative charges are accumulated on the DC negative pressure component 30, and the negative charges are of the same type as the negative charges on the particles 50. The particles 50 are separated from the target wafer 40 by the repulsive force between charges of the same type.

[0047] When the target wafer 40 is fixed on the heating plate 20 , the target wafer 40 , the heating plate 20 and the DC negative pressure assembly 30 are coaxially arranged.

[0048] In the present application, a CVD (Chemical Vapor DepoEition) device is a device used to deposit a thin film on the surface of a wafer. During the processing of the wafer using the CVD device, reaction byproducts, gas phase nucleation or deposition layer peeling will generate solid particles 50 .

[0049] Specifically, after the target wafer 40 is plasma cleaned, the plasma used to clean the target wafer 40 is composed of free electrons, positive ions, and neutral particles (such as gas molecules). In the plasma, since the density of electrons is higher than that of ions, it is easier for electrons to combine with the particles 50 in the cleaning chamber where the machine body 10 is located. Since free electrons are negatively charged, the particles 50 will be negatively charged after the surface of the particles 50 combines with the free electrons.

[0050] See 6 and Figure 7 After the DC negative pressure component 30 is energized by the DC power supply, the negative voltage acting on the DC negative pressure component 30 will accumulate a large amount of negative charges (electrons) on the DC negative pressure component 30. These negative charges are distributed in the space around the surface of the conductive ring, thereby forming an electric field E in the space around the DC negative pressure component 30, and the electric field E of the electric field E points to the DC negative pressure component 30.

[0051] When the edge of the target wafer 40 and the negatively charged particle 50 located on the side of the edge away from the DC negative pressure component 30 enter the electric field E, along the vertical direction, the force exerted by the electric field E on the particle 50 is opposite to the direction of the gravity of the particle 50. The force exerted by the electric field E on the particle 50 is set to F. According to Coulomb's law F=q*E and E=V / d, it can be known that the intensity of the electric field E can be adjusted by adjusting the size of V, and then the force exerted by the electric field E on the particle 50 can be adjusted to be greater than or equal to the gravity of the particle 50, wherein q is the charge of the particle 50 (negative charge), E is the intensity of the electric field E, V is the voltage applied to the DC negative pressure component 30, and d is the distance between the two electrodes.

[0052] By adjusting the intensity of the electric field E, when the force of the electric field E acting on the particle 50 is greater than the gravity of the particle 50, the particle 50 will move in a direction away from the DC negative pressure component 30, or, when the force of the electric field E acting on the particle 50 is equal to the gravity of the particle 50, the particle 50 will be suspended in the electric field E to facilitate the subsequent cleaning of the particle 50 by nitrogen.

[0053] Compared with the prior art, the CVD machine provided in the present application includes a machine body 10, a heating plate 20, a DC negative pressure component 30 and a DC power supply, wherein the DC power supply is electrically connected to the DC negative pressure component 30, the machine body 10 is provided with a receiving chamber 11 having a first opening 111, the heating plate 20 is connected to the receiving chamber 11, and the DC negative pressure component 30 is connected to the heating plate 20. After the DC negative pressure component 30 is connected to the DC power supply, the negative voltage acting on the DC negative pressure component 30 will accumulate a large amount of negative charges on the DC negative pressure component 30, and these negative charges are distributed in the space around the surface of the conductive ring, thereby forming an electric field E in the space around the DC negative pressure component 30. Since the particle 50 also has negative charges, under the action of the repulsive force between charges of the same type, the particle 50 will move in a direction away from the DC negative pressure component 30, or be suspended in the electric field E, so as to facilitate the subsequent cleaning of the particle 50 by nitrogen gas.

[0054] A vacuum channel is provided in the heating plate 20 , and the vacuum channel runs through the heating plate 20 . The vacuum channel is externally connected to a vacuum generator. When the vacuum generator is working, the heating plate 20 fixes the target wafer 40 through vacuum adsorption.

[0055] Preferably, the number of the accommodating cavities 11 is four, and the four accommodating cavities 11 are arranged on the machine body 10 in a matrix.

[0056] In one implementation of the application, the heating plate 20 is rotatably connected to the accommodating chamber 11. Among the four heating plates 20, each heating plate 20 is fixedly connected to a shaft 23 on the side facing away from the target wafer 40. Each shaft 23 is driven to rotate by a servo motor opposite thereto. When the servo motor is started, the shaft 23 drives the corresponding heating plate 20 to rotate relative to the accommodating chamber 11. At the same time, a rotary joint is provided on each shaft 23 so that the vacuum flow channel on the heating plate 20 is connected to the vacuum generator through the rotary joint.

[0057] By rotatably connecting the heating plate 20 to the accommodating chamber 11 , when depositing a thin film on the target wafer 40 , the servo motor drives the heating plate 20 to rotate, so as to improve the uniformity of the thin film deposition on the target wafer 40 .

[0058] In the present application, the CVD machine further includes a current ring 60 .

[0059] For details, please refer to Figure 2 The current-carrying ring 60 has a ring-shaped structure. The current-carrying ring 60 is fixedly connected to the inner wall of the accommodating cavity 11 and is sleeved on the outer side of the bearing portion 22 on the heating plate 20. The DC negative pressure component 30 is connected to the inner side of the current-carrying ring 60, and the DC negative pressure component 30 is located on the outer side of the bearing portion 22.

[0060] See also Figure 4 and Figure 7Along the axial direction of the heating disk 20 , the current-carrying ring 60 has a first position and a second position relative to the bearing portion 22 of the heating disk 20 , and the current-carrying ring 60 moves relative to the heating disk 20 between the first position and the second position.

[0061] When the current-carrying ring 60 is in the first position, the DC negative pressure component 30 is separated from the target wafer 40, and the DC negative pressure component 30 is disconnected from the DC power supply. When the current-carrying ring 60 is in the second position, the DC negative pressure component 30 is in contact with the target wafer 40, and the DC negative pressure component 30 is connected to the DC power supply, and the DC negative pressure component 30 accumulates negative charges.

[0062] When the chamber in which the CVD machine is located is in the process of plasma gas cleaning of the target wafer 40 and deposition on the target wafer 40, the current-carrying ring 60 is in the first position. At this time, the DC negative pressure component 30 is separated from the target wafer 40, and the DC negative pressure component 30 is disconnected from the DC power supply to maintain the uniformity and stability of the electric field E in the chamber during the deposition process, thereby reducing the interference of the electric field E formed on the DC negative pressure component 30 on the distribution of deposited materials on the surface of the target wafer 40 and the quality of the thin film, improving the quality and uniformity of the deposited thin film, and avoiding the adverse effect of the unstable electric field E in the chamber in which the CVD machine is located on the deposition of the thin film.

[0063] When the chamber where the CVD machine is located completes the deposition process on the target wafer 40 and needs to be purged with nitrogen, the current-carrying ring 60 is in the second position. At this time, the DC negative pressure component 30 is connected to the DC power supply, negative charges accumulate on the DC negative pressure component 30 and an electric field E is generated, and the DC negative pressure component 30 is in contact with the target wafer 40 so that the edge of the target wafer 40 is located in the electric field E generated by the DC negative pressure component 30, thereby preventing negatively charged particles 50 from falling on the edge of the target wafer 40.

[0064] The current-carrying ring 60 is connected to the side wall of the accommodating cavity 11, and can be moved relative to the current-carrying ring 60 by the heating plate 20 along its axial direction, or can be driven by the machine body 10 to move relative to the heating plate 20 along the axial direction of the heating plate 20, so as to move the DC negative pressure component 30 between the first position and the second position, thereby making the target wafer 40 abut against or separate from the DC negative pressure component 30, so that the current-carrying ring 60 drives the target wafer 40 to enter the electric field E generated by the DC negative pressure component 30, or separate from the electric field E generated by the DC negative pressure component 30.

[0065] In one embodiment of the present application, the current-carrying ring 60 can be moved between the first position and the second position by moving the heating plate 20 along its axial direction relative to the current-carrying ring 60, thereby causing the target wafer 40 to abut against or separate from the DC negative pressure component 30, so that the current-carrying ring 60 drives the target wafer 40 into the electric field E generated by the DC negative pressure component 30, or separates from the electric field E generated by the DC negative pressure component 30.

[0066] Specifically, the four heating plates 20 are driven to move relative to the machine along the axial direction of the heating plates 20 at the same time through the lifting mechanism and the connecting parts. The four heating plates 20 are connected to the lifting mechanism through the connecting parts. Among the four current-carrying rings 60, each current-carrying ring 60 is fixedly connected to the side wall of the corresponding accommodating cavity 11. Therefore, when the heating plate 20 moves along its axial direction relative to the current-carrying ring 60, the current-carrying ring 60 can drive the DC negative pressure assembly 30 to separate from or abut against the target wafer 40.

[0067] The four shafts 23 are connected to the connecting member, so that the lifting mechanism drives the heating plate 20 to move relative to the machine along the axial direction of the heating plate 20 through the connecting member.

[0068] In the technical solution of the heating plate 20 rotating and connected in the accommodating cavity 11, four servo motors are fixed on the connecting parts, and four shafts 23 are respectively connected to the connecting parts through bearings. The lifting mechanism simultaneously drives the heating plate 20 and the servo motor to move relative to the machine along the axial direction of the heating plate 20 through the connecting parts.

[0069] In another embodiment of the present application, the target wafer 40 can be brought into contact with or separated from the DC negative pressure component 30 by moving the current-carrying ring 60 relative to the heating plate 20 along the axial direction of the heating plate 20, so that the current-carrying ring 60 drives the target wafer 40 into the electric field E generated by the DC negative pressure component 30, or separates from the electric field E generated by the DC negative pressure component 30.

[0070] Specifically, since the current-carrying ring 60 is fixedly connected to the inner wall of the accommodating space 221, the machine body 10 can be driven by the lifting mechanism to drive the current-carrying ring 60 to move axially relative to the heating disk 20, so that the current-carrying ring 60 can drive the DC negative pressure component 30 to separate or abut the target wafer 40.

[0071] In the present application, preferably, the lifting mechanism is a lifting cylinder.

[0072] In the present application, a control switch is provided on the wire between the DC negative voltage component 30 and the DC power supply. When the current-carrying ring 60 is in the first position, the control switch controls the DC negative voltage component 30 to be disconnected from the DC power supply. When the current-carrying ring 60 is in the second position, the control switch controls the DC negative voltage component 30 to be connected to the DC power supply.

[0073] In this application, please refer to Figures 2 to 4 The DC negative pressure component 30 includes a conductive coil 31 and a metal ring 32 .

[0074] The conductive coil 31 is connected to the current-carrying ring 60 and is sleeved on the outer side of the carrying portion 22 of the heating plate 20 . The conductive coil 31 is electrically connected to a DC power source.

[0075] The metal ring 32 is electrically connected to the conductive coil 31 and is sleeved on the outer side of the carrier 22 on the heating plate 20. The outer diameter of the metal ring 32 is larger than the diameter of the target wafer 40, and the inner diameter of the metal ring 32 is smaller than the diameter of the target wafer 40. The metal ring 32 is used to separate from or abut against the target wafer 40. When the metal ring 32 is separated from the target wafer 40, the metal ring 32 is disconnected from the DC power supply; and when the metal ring 32 abuts against the target wafer 40, the metal ring 32 is connected to the DC power supply to accumulate charges in the metal ring 32 to form an electric field E.

[0076] See also Figure 6 and Figure 7 When the metal ring 32 is used to abut against the target wafer 40 , the control switch controls the conductive coil 31 to be turned on by the DC power supply, and the current enters the metal ring 32 through the conductive coil 31 to generate an electric field E on the metal ring 32 .

[0077] In one implementation of the present application, the metal ring 32 is made of aluminum alloy.

[0078] When the metal ring 32 made of aluminum alloy is connected to a DC power supply, the negative voltage acting on the metal ring 32 will accumulate a large amount of negative charges on the DC negative voltage component 30, thereby forming a stable and controllable electric field E on the outside of the metal ring 32. At the same time, the metal ring 32 made of aluminum alloy forms a natural oxide film on its surface, which has good corrosion resistance to prevent nitrogen from corroding the metal ring 32 when nitrogen is purged on the target wafer 40, thereby improving the long-term stability and reliability of the equipment and reducing the maintenance and replacement frequency of the metal ring 32.

[0079] In one embodiment of the present application, a receiving groove 61 having a second opening 62 is provided on the inner side of the current-carrying ring 60 , and the second opening 62 faces the inner side of the current-carrying ring 60 .

[0080] See also Figure 4 and Figure 5 The conductive coil 31 is installed in the accommodating groove 61 and partially extends to the outside of the accommodating groove 61. The outer wall of the metal ring 32 is connected to the portion of the conductive coil 31 extending to the outside of the accommodating groove 61, so that the metal ring 32 is electrically connected to the conductive coil 31.

[0081] The outer side wall of the conductive coil 31 abuts against the bottom wall of the receiving groove 61, so that the outer side wall of the conductive coil 31 is covered by the bottom wall of the receiving groove 61; the upper side wall of the conductive coil 31 abuts against the upper side wall of the receiving groove 61, so that the upper side wall of the conductive coil 31 is covered by the upper side wall of the receiving groove 61; the lower side wall of the conductive coil 31 abuts against the lower side wall of the receiving groove 61, so that the lower side wall of the conductive coil 31 is covered by the lower side wall of the receiving groove 61, thereby preventing the particles 50 from accumulating on the conductive coil 31.

[0082] In one implementation of this application, see Figure 1 The CVD machine also includes a conductive column 70. The conductive column 70 is made of conductive metal, such as aluminum alloy. The length direction of the conductive column 70 extends along the radial direction of the heating plate 20. One end of the conductive column 70 in the length direction is fixedly connected to the machine body 10 and electrically connected to the DC power supply, and the other end passes through the current-carrying ring 60 and is electrically connected to the conductive coil 31, so as to replace the connecting column made of aluminum nitride ceramic material used to fix the current-carrying ring 60 on the machine in the existing CVD machine.

[0083] In one implementation of this application, see Figure 8 A first through hole 63 is provided on the lower side wall of the accommodating groove 61, and a contact portion 71 is provided on the conductive column 70. The contact portion 71 extends in a direction perpendicular to the length direction of the conductive column 70 and is inserted into the first through hole 63, so that the current-carrying ring 60 and the machine body 10 are relatively fixed. The contact portion 71 passes through the first through hole 63 and contacts the conductive coil 31 to transmit the current in the DC power supply to the conductive coil 31.

[0084] In another embodiment of the application, see Fig. 9 A first through hole 63 is formed on the bottom wall of the receiving groove 61 , and one end of the conductive column 70 away from the machine body 10 is inserted into the first through hole 63 and abuts against the conductive coil 31 to transmit the current in the DC power supply to the conductive coil 31 .

[0085] In the present application, there are multiple conductive pillars 70 , and the multiple conductive pillars 70 are evenly spaced apart along the circumference of the heating plate 20 .

[0086] Preferably, the number of the conductive pillars 70 is three, and the three conductive pillars 70 are evenly spaced along the circumference of the heating plate 20. By providing the conductive pillars 70 evenly spaced along the circumference of the heating plate 20, on the one hand, the reliability of the electrical connection between the conductive coil 31 and the DC power supply is improved, and on the other hand, the stability of the connection between the current-carrying ring 60 and the machine body 10 is improved.

[0087] In another embodiment of the present application, see Fig.10 and Fig.11The DC negative pressure assembly 30 only includes a conductive coil 31, which is electrically connected to a DC power source. The heating plate 20 is connected to the accommodating cavity 11, and the conductive coil 31 is disposed inside the bearing portion 22 on the heating plate 20 and is located on a side of the bearing portion 22 close to the target wafer 40, and the conductive coil 31 is arranged in a ring shape.

[0088] Specifically, a receiving space 221 is provided inside the bearing portion 22 of the heating plate 20, and the conductive coil 31 is installed in the receiving space 221. When the target wafer 40 is fixed on the heating plate 20 and the target wafer 40 is cleaned by nitrogen, the control switch controls the conductive coil 31 to be connected to the DC power supply. Under the action of the negative voltage, a large amount of negative charges accumulate on the conductive coil 31. These negative charges are distributed in the space around the surface of the conductive coil 31, thereby forming an electric field E in the space around the conductive coil 31, and the electric field E direction of the electric field E points to the conductive coil 31. The target wafer 40 is fixed on the heating plate 20 under the action of the vacuum adsorption force, and the edge of the target wafer 40 is located in the electric field E to prevent the negatively charged particles 50 from falling on the edge of the target wafer 40.

[0089] In this embodiment, the accommodating space 221 is provided with an opening, and a detachable cover plate 24 is connected to the opening of the accommodating space 221 to fix the conductive coil 31 in the accommodating space 221. The disc body 21 of the heating disc 20 is provided with a second through hole 211, and the second through hole 211 is communicated with the accommodating space 221. The shaft body 23 is provided with a third through hole 231, and the third through hole 231 penetrates the shaft body 23 along the axial direction of the shaft body 23, and the third through hole 231 is coaxially arranged with the second through hole 211, and the third through hole 231 is communicated with the accommodating space 221 through the second through hole 211.

[0090] The conductive coil 31 is electrically connected to the DC power supply through a wire, one end of the wire is connected to the conductive coil 31 , and the other end of the wire passes through the second through hole 211 and the third through hole 231 and is connected to the DC power supply.

[0091] In the technical solution of the rotational connection between the heating disk 20 and the accommodating cavity 11, a conductive slip ring 25 is connected to the end of the shaft 23 away from the heating disk 20, the conductive slip ring 25 is electrically connected to a DC power supply, and the end of the wire away from the conductive coil 31 is connected to the conductive slip ring 25.

[0092] In a second aspect, the present application provides a CVD device, including a CVD machine.

[0093] CVD machine The CVD machine provided by any one of the above embodiments. The control switch, servo motor and driving mechanism in the CVD machine are all electrically connected to the control component in the CVD equipment.

[0094] When a thin film is deposited on the target wafer 40 on the CVD machine, the control component in the CVD device controls the servo motor to rotate to improve the uniformity of the thin film deposition on the target wafer 40. When the CVD device needs to perform nitrogen purge on the target wafer 40, the control component in the CVD device controls the driving mechanism to drive the current-carrying ring 60 to move to the second position so that the metal ring 32 abuts against the target wafer 40, and the control component in the CVD device controls the control switch to turn on the conductive coil 31 and the DC power supply so that the edge of the target wafer 40 enters the electric field E generated on the metal ring 32, thereby preventing the negatively charged particles 50 from falling on the edge of the target wafer 40.

[0095] Compared with the prior art, the CVD device provided in the present application includes any one of the above-mentioned CVD machines, the CVD machine includes a machine body 10, a heating plate 20, a DC negative pressure component 30 and a DC power supply, the DC power supply is electrically connected to the DC negative pressure component 30, the machine body 10 is provided with a receiving chamber 11 having a first opening 111, the heating plate 20 is connected in the receiving chamber 11, the DC negative pressure component 30 is connected to the heating plate 20, after the DC negative pressure component 30 is connected to the DC power supply, the negative voltage acting on the DC negative pressure component 30 will accumulate a large amount of negative charges on the DC negative pressure component 30, these negative charges are distributed in the space around the surface of the conductive ring, thereby forming an electric field E in the space around the DC negative pressure component 30, since the particle 50 also has negative charges, under the action of the repulsive force between charges of the same type, the particle 50 will move in a direction away from the DC negative pressure component 30, or suspend in the electric field E, so as to facilitate the subsequent cleaning of the particle 50 by nitrogen.

[0096] The above are only preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A CVD machine, characterized in that: include: The machine body is provided with a receiving cavity having a first opening. A heating plate, accommodated in the accommodating cavity, and used for carrying the target wafer; A DC negative pressure component is arranged in an annular structure and is arranged on the heating plate, wherein the outer diameter of the DC negative pressure component is larger than the diameter of the target wafer, and the inner diameter of the DC negative pressure component is smaller than the diameter of the target wafer; A DC power supply, electrically connected to the DC negative pressure component; When the DC power supply is connected to the DC negative pressure component, negative charges are accumulated on the DC negative pressure component, and the negative charges are of the same type as the negative charges on the particles. The particles are separated from the target wafer by the repulsive force between charges of the same type as the negative charges.

2. The CVD machine according to claim 1, wherein: Also includes: A current-carrying ring connected to the side wall of the accommodating cavity and sleeved on the outer side of the heating plate, wherein the DC negative pressure component is connected to the current-carrying ring; Along the axial direction of the heating disk, the current-carrying ring has a first position and a second position relative to the heating disk, and the current-carrying ring moves relative to the heating disk between the first position and the second position; When the current-carrying ring is in the first position, the DC negative pressure component is separated from the target wafer, and the DC power supply is disconnected from the DC negative pressure component; When the current-carrying ring is in the second position, the DC negative-pressure component abuts against the target wafer, and the DC power supply is connected to the DC negative-pressure component.

3. The CVD machine according to claim 2, wherein: The DC negative pressure component comprises: A conductive coil is connected to the current-carrying ring and sleeved on the outside of the heating plate, and the conductive coil is electrically connected to the DC power supply; A metal ring, electrically connected to the conductive coil and sleeved on the outer side of the heating plate, wherein the outer diameter of the metal ring is larger than the diameter of the target wafer, and the inner diameter of the metal ring is smaller than the diameter of the target wafer, and the metal ring is used to separate from or abut against the target wafer; When separated from the target wafer, the metal ring is disconnected from the DC power supply; When in contact with the target wafer, the DC power source is turned on to accumulate the negative charges.

4. The CVD machine according to claim 3, wherein: The metal ring is made of aluminum alloy.

5. The CVD machine according to claim 4, wherein: A receiving groove having a second opening is provided on a side of the current-carrying ring away from the target wafer, and the second opening faces the inner side of the current-carrying ring; The conductive coil is installed in the receiving groove and partially extends to the outside of the receiving groove. The outer wall of the metal ring is connected to the portion of the conductive coil extending to the outside of the receiving groove, so that the metal ring is electrically connected to the conductive coil.

6. The CVD machine according to claim 5, wherein: Also includes: A conductive column has one end electrically connected to the DC power supply and the other end electrically connected to the conductive coil.

7. The CVD machine according to claim 6, wherein: There are multiple conductive pillars, and the multiple conductive pillars are evenly spaced along the circumference of the heating plate.

8. The CVD machine according to claim 1, wherein: The DC negative pressure assembly includes a conductive coil, and the conductive coil is electrically connected to the DC power supply; The heating plate is connected to the accommodating cavity, and the conductive coil is arranged in the heating plate and is located at a side of the heating plate close to the target wafer.

9. The CVD machine according to claim 8, wherein: Also includes: A conductive column has one end electrically connected to the DC power supply and the other end electrically connected to the conductive coil. There are multiple conductive columns, and the multiple conductive columns are evenly spaced along the circumference of the heating plate.

10. A CVD device, characterized in that: include; A CVD machine, wherein the CVD machine is the CVD machine according to any one of claims 1 to 9.

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