Gas conductance adjusting device of semiconductor process chamber

Abstract

The present invention relates to a gas conductance adjusting device for a semiconductor process chamber, comprising: a baffle plate which comprises a plurality of baffle plate holes formed along the circumferential direction and is arranged on the inner bottom surface of the process chamber; an opening degree adjusting mechanism which is arranged at the lower part of the baffle plate and comprises a plurality of adjusting pins which are formed in a one-to-one matching manner with the baffle plate holes; and the operating mechanism is connected with the opening degree adjusting mechanism and used for operating the opening degree adjusting mechanism in the vertical direction. Therefore, the gas conductance of the process chamber can be more accurately adjusted by adjusting the opening degree of the baffle hole of the baffle.

Description

Technical Field

[0001] The present invention relates to a gas conductance regulating device for a semiconductor process chamber, and more particularly, to a gas conductance regulating device for a semiconductor process chamber capable of regulating the gas conductance by adjusting the opening of a baffle hole of a baffle. Background Art

[0002] In order to manufacture semiconductors, a deposition process is required to form a thin film on the surface of the wafer. There are many deposition processes, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ADL), etc.

[0003] Generally speaking, the deposition process is achieved by forming a vacuum and plasma inside a process chamber (reactor) and supplying a reaction gas, and then using physical and chemical methods to deposit the reaction gas components on the surface of the wafer to form a thin film.

[0004] The deposition equipment has a pump and a pressure regulating valve (throttle valve) to form and maintain a vacuum state inside the process chamber. The pump forms a vacuum by sucking and exhausting the air inside the process chamber, and uses the pressure regulating valve to adjust the pressure inside the process chamber to a desired value by the user.

[0005] On the other hand, gas conductance is a value indicating the extent to which the gas in the process chamber related to adjusting the vacuum degree can be moved by the pump (the gas conductance is also referred to as vacuum conductance. It is referred to as gas conductance in this specification).

[0006] The gas conductance is related to the residence time of the reaction gas in the process chamber. Since the residence time of the reaction gas affects the film quality, it is necessary to control the residence time of the reaction gas to deposit an accurate and high-quality film. Therefore, it is necessary to control the gas conductance.

[0007] However, as described above, the residence time of the reaction gas cannot be accurately and effectively controlled by simply adjusting the pump and the pressure regulating valve, and thus there is a limitation in depositing and forming a thin film desired by a user.

[0008] Prior art is technical information that the inventor possesses in order to derive the present invention or obtains in the process of deriving the present invention, which is not necessarily regarded as common known technology disclosed to the general public before applying for the present invention.

[0009] Prior art literature

[0010] Patent Literature

[0011] Patent Document 1: Korean Patent Publication No. 10-2023-0017610 (published on February 6, 2023) Summary of the invention

[0012] Technical issues

[0013] In order to solve the above problems, the object of the present invention is to provide a gas conductance adjustment device for a semiconductor process chamber, which can more accurately adjust the gas conductance of the process chamber by adjusting the opening of the baffle hole of the baffle using a pin-shaped mechanism.

[0014] The problems to be solved by the present invention are not limited to the above problems, and a person skilled in the art can clearly understand other problems to be solved that are not mentioned from the following description.

[0015] Solutions to the problem

[0016] The gas conductance regulating device of the semiconductor process chamber of the embodiment of the present invention comprises: a baffle plate, comprising a plurality of baffle holes formed along the circumferential direction, and arranged on the inner bottom surface of the process chamber; an opening regulating mechanism, arranged at the lower part of the above-mentioned baffle plate, comprising a plurality of regulating pins formed in a manner of one-to-one matching with the above-mentioned baffle holes; and an operating mechanism, connected to the above-mentioned opening regulating mechanism, and used for operating the above-mentioned opening regulating mechanism in the up and down directions.

[0017] Furthermore, the opening adjustment mechanism may be disposed inside the exhaust space, the exhaust space being formed by the abutment of an annular upper groove formed on the lower surface of the baffle and an annular lower groove formed on the bottom surface of the process chamber where the baffle is disposed, the opening adjustment mechanism may be connected to the connecting shaft of the operating mechanism, and the connecting shaft of the operating mechanism is inserted through an axial hole formed through the bottom surface of the lower groove.

[0018] Furthermore, the opening adjustment mechanism may include: the adjustment pin, which protrudes upward from the upper surface of the annular body; and a plurality of connecting parts, which protrude downward at equal intervals along the circumferential direction from the lower surface of the body, and the connecting shaft may be connected to the connecting parts.

[0019] Furthermore, the operating mechanism can be provided in a manner connected to each connection portion of the opening adjustment mechanism, and can be operated and controlled in the same manner by the same control unit.

[0020] Furthermore, the operating mechanism may include: a nut component threadedly engaged with the lower portion of the connecting shaft; a pinion gear meshing with the outer peripheral surface of the nut component; a motor, wherein the pinion gear is arranged on the rotating shaft; and a housing housing the lower portion of the connecting shaft, the nut component, the pinion gear, and the motor.

[0021] Furthermore, the operating mechanism may include: a supporting component disposed on the inner bottom surface of the housing; and a bearing disposed between the supporting component and the nut component.

[0022] Furthermore, the operating mechanism may include: a bellows, disposed between the lower surface of the process chamber and the upper surface of the shell, surrounding the outer portion of the connecting shaft; and a seal, respectively disposed between the upper end of the bellows and the lower surface of the process chamber and between the lower end of the bellows and the upper surface of the shell.

[0023] Furthermore, the gas conductance adjustment device of the semiconductor process chamber may include: a first clamp, which is tightly attached to the connecting portion and is used to maintain the radial position of the opening adjustment mechanism; and a second clamp, in which the adjustment pin is inserted, which is used to match the adjustment pin with the center of the baffle hole.

[0024] Furthermore, the flat cross-section of the first clamp may be semicircular, the inner circumferential surface may be formed as a circular surface having the same curvature as the connecting portion of the opening adjustment mechanism, a protrusion may be formed on the lower surface, and the protrusion may be inserted into a protrusion groove formed on the bottom surface of the lower groove of the process chamber.

[0025] Furthermore, the second fixture may be in the shape of a circular tube, and when inserted into the baffle hole of the baffle, the upper end of the adjustment pin may be inserted into the inner diameter portion of the lower end.

[0026] Effects of the Invention

[0027] As described above, the gas conductance regulating device for a semiconductor process chamber of the present invention can more accurately regulate the gas conductance of the process chamber by regulating the opening of the baffle hole of the baffle through a pin-shaped mechanism.

[0028] The effects of the present invention are not limited to the above-mentioned problems, and those skilled in the art to which the present invention pertains can clearly understand other effects not mentioned from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 The present invention is a top view and a front cross-sectional view showing a state where a baffle is provided inside a semiconductor process chamber to which a gas conductance adjusting device of a semiconductor process chamber according to an embodiment of the present invention can be applied.

[0030] Figure 2 It is a perspective view showing a state in which an opening adjustment mechanism, which is one structure of a gas conductance adjustment device for a semiconductor process chamber according to an embodiment of the present invention, is arranged below the baffle.

[0031] Figure 3 This is a diagram of the setting state of the gas conductance adjustment device of the semiconductor process chamber according to an embodiment of the present invention, showing the descending state of the above-mentioned opening adjustment mechanism.

[0032] Figure 4 The figure is a bottom plan view of the process chamber in a state where the baffle is removed in the gas conductance adjustment device of the semiconductor process chamber according to an embodiment of the present invention.

[0033] Figure 5 It is a diagram showing the rising state of the above-mentioned opening adjustment mechanism in the gas conductance adjustment device of the semiconductor process chamber according to the embodiment of the present invention.

[0034] Figure 6 The figure is a setting state diagram of a plurality of fixtures used to set the above-mentioned opening adjustment mechanism in the gas conductance adjustment device of the semiconductor process chamber according to the embodiment of the present invention at the correct position.

[0035] (Explanation of Reference Numerals)

[0036] 10: Chamber 11: Center hole

[0037] 12: Lower groove 13: Exhaust hole

[0038] 14: Shaft hole 15: Protrusion groove

[0039] 16: Pin slot 20: Baffle

[0040] 21: Baffle hole 22: Upper groove

[0041] 23: Pin slot 30: Opening adjustment mechanism

[0042] 31: Adjustment pin 32: Connection part

[0043] 40: Operating mechanism 41: Connecting shaft

[0044] 41a: External thread portion 42: Nut member

[0045] 43: Small gear 44: Motor

[0046] 45: Shell 46: Supporting part

[0047] 47: Bearing 48: Bellows

[0048] 49: Seal 50: Pin

[0049] 60: First clamp 61: Protrusion

[0050] 70: Second clamp DETAILED DESCRIPTION

[0051] In the present invention, for the sake of distinction and clarity from the prior art and for ease of mastering the technology, the drawings may be shown in exaggerated expressions. In addition, the terms described below are terms defined in consideration of the functions in the present invention, which may vary according to the intentions or habits of the user or operator, so the definitions of these terms should be based on the technical content of the entire specification. On the other hand, the embodiments are merely illustrative items of the structural elements presented in the claims of the present invention, and do not limit the scope of rights of the present invention, and the scope of rights should be interpreted based on the technical ideas of the entire specification.

[0052] Throughout the specification, when it is stated that a certain structure “includes” another structure, unless there is a special description to the contrary, this does not mean that other structural elements are excluded, but other structural elements may also be included.

[0053] Furthermore, when it is said that a certain structure is “connected”, “coupled”, or “combined” with another structure, this means that in addition to the cases of “direct connection”, “direct coupling”, or “direct combination”, there may also be cases of “connection with other components in between”, “coupling with other components in between”, or “combination with other components in between”. Conversely, when it is said that a certain structure is “directly connected”, “directly coupled”, or “directly combined” with another structure, this should be understood as meaning that there is no other structure in between.

[0054] Furthermore, when directional terms such as "front", "back", "up", "down", "left", "right", "one end", "the other end", "both ends" are used, these terms are used illustratively with respect to the directions of the disclosed drawings and should not be interpreted restrictively. When terms such as "first" and "second" are used, these terms are terms used to distinguish each structure and should not be interpreted restrictively.

[0055] In order to more clearly describe the features of the embodiments of the present invention, detailed descriptions of contents known to those skilled in the art to which the following embodiments belong will be omitted. In addition, detailed descriptions of parts of the drawings that are not related to the description of the embodiments will be omitted.

[0056] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0057] Figure 1 The present invention is a top view and a front cross-sectional view showing a state where a baffle is provided inside a semiconductor process chamber to which the gas conductance adjustment device of the semiconductor process chamber according to the embodiment of the present invention can be applied. Figure 21 is a perspective view showing a state in which an opening adjustment mechanism is arranged at a lower portion of the baffle as one structure of a gas conductance adjustment device for a semiconductor process chamber according to an embodiment of the present invention. Figure 3 FIG. 1 is a diagram showing the arrangement of a gas conductance regulating device for a semiconductor process chamber according to an embodiment of the present invention, showing the descending state of the above-mentioned opening regulating mechanism. Figure 4 FIG. 1 is a bottom plan view of the process chamber in a state where the baffle is removed in the gas conductance adjustment device of the semiconductor process chamber according to an embodiment of the present invention. Figure 5 1 is a diagram showing the rising state of the opening adjustment mechanism in the gas conductance adjustment device for a semiconductor process chamber according to an embodiment of the present invention. Figure 6 The figure is a setting state diagram of a plurality of fixtures used to set the above-mentioned opening adjustment mechanism in the gas conductance adjustment device of the semiconductor process chamber according to the embodiment of the present invention at the correct position.

[0058] Reference Figures 1 to 6 The gas conductance regulating device of the semiconductor process chamber according to the embodiment of the present invention comprises a baffle 20 , an opening regulating mechanism 30 and an operating mechanism 40 .

[0059] First, the process chamber 10 (hereinafter referred to as "chamber 10" for convenience) and the baffle 20 disposed therein will be described. Figure 1 As shown, a space for inserting a wafer and performing a deposition process may be formed inside the chamber 10. The baffle 20 may be disposed on the inner bottom surface of the chamber 10. The baffle 20 may have an annular plate shape and may include a plurality of baffle holes 21 formed along a circumferential direction.

[0060] That is, the baffle holes 21 may be formed penetrating the baffle 20 in the vertical direction at equal intervals along the entire circumferential direction of the baffle 20 .

[0061] A center hole 11 through which the central axis of the heater supporting the wafer passes may be formed at the center of the bottom of the chamber 10. The baffle plate 20 is disposed outside the center hole 11, and the center hole 11 and the baffle plate 20 are in a concentric circle relationship.

[0062] An annular lower groove 12 may be formed in a downwardly concave shape at a radially outer portion of the bottom surface of the chamber 10 and is concentric with the center hole 11. The lower groove 12 may be formed on the bottom surface of the baffle 20.

[0063] Corresponding to the lower groove 12, an upper groove 22 having an overall annular shape and a cross-section that is concave upward may also be formed on the lower surface of the baffle 20. The lower groove 12 abuts against the upper groove 22 to form an exhaust space (without a reference numeral). An exhaust hole 13 communicating with the outside of the chamber 10 may be formed on one side of the exhaust space. Although not shown, a flow regulating valve (throttle valve) and a vacuum pump may be provided in the flow path connected to the exhaust hole 13.

[0064] Therefore, when the vacuum pump is working, the gas in the inner space of the chamber 10 may move to the exhaust space through the baffle hole 21 of the baffle 20 and then be exhausted to the outside of the chamber 10 through the exhaust hole 13 .

[0065] The opening adjustment mechanism 30 may be disposed inside the exhaust space, and the exhaust space is formed by the abutment of the annular upper groove 22 formed on the lower surface of the baffle 20 and the annular lower groove 12 formed on the bottom surface of the process chamber 10 where the baffle 20 is disposed. The opening adjustment mechanism 30 is disposed at the lower portion of the baffle 20, and may include a plurality of adjustment pins 31 that match the baffle holes 21 one by one. The opening adjustment mechanism 30 may be in the shape of a circular ring as a whole. The opening adjustment mechanism 30 may be connected to the connecting shaft 41 of the operating mechanism 40, and the connecting shaft 41 is inserted through the shaft hole 14 formed through the bottom surface of the lower groove 12. The opening adjustment mechanism 30 may be in the shape of a circle having the same diameter as the diameter of the circle of the baffle hole 21 to which the baffle 20 is connected. That is, the length (radius) from the inner diameter center of the opening adjustment mechanism 30 to the middle point of the main body of the opening adjustment mechanism 30 is the same as the length (radius) from the center of the baffle 20 to the center of the baffle hole 21 .

[0066] A plurality of the adjusting pins 31 may be formed protruding upward on the upper surface of the annular body of the opening adjustment mechanism 30. The adjusting pins 31 may correspond one-to-one to the plurality of the baffle holes 21 formed on the baffle 20. That is, the number of the baffle holes 21 and the adjusting pins 31 is the same, and both are formed at equal intervals.

[0067] The adjustment pin 31 may have a shape in which the diameter gradually increases from the upper end to the lower end. That is, the outer peripheral surface of the adjustment pin 31 is formed to be inclined like the outer peripheral surface of a cone.

[0068] The adjusting pin 31 may be formed so that the diameter of the lower end is smaller than the diameter of the baffle hole 21. Therefore, the adjusting pin 31 rises from the bottom of the baffle hole 21 and is completely inserted into the baffle hole 21. Therefore, as the amount of the adjusting pin 31 inserted into the baffle hole 21, that is, the insertion amount, increases, the opening of the flow path, that is, the opening area, decreases, and when the adjusting pin 31 is completely inserted into the baffle hole 21, the upper surface of the opening adjustment mechanism 30 may block the outlet of the baffle hole 21.

[0069] Therefore, by adjusting the up-and-down position of the adjusting pin 31, the opening of the flow path passing through the baffle hole 21 can be adjusted, and the flow path can be completely opened or blocked.

[0070] In the above-mentioned opening adjustment mechanism 30, the above-mentioned adjustment pin 31 may be formed to protrude upward on the upper surface of the annular body, and a plurality of connection parts 32 may be formed to protrude downward at equal intervals along the circumferential direction on the lower surface of the annular body, and the above-mentioned connecting shaft 41 may be connected to the above-mentioned connection parts 32. The above-mentioned connection parts 32 are cylindrical in shape and may be formed to protrude vertically downward on the lower surface of the above-mentioned opening adjustment mechanism 30. The diameter of the above-mentioned connection parts 32 is larger than the width of the body of the above-mentioned opening adjustment mechanism 30 (refer to Figure 6 ).

[0071] The connection portion 32 is a portion connected to the operating mechanism 40, and the operating mechanism 40 may be connected to each connection portion 32. That is, the operating mechanism 40 is provided in a manner of being connected to each connection portion 32 of the opening adjustment mechanism 30, and the opening adjustment mechanism 30 may be raised and lowered by a plurality of the operating mechanisms 40. Although not shown, the operating mechanisms 40 may be operated and controlled in the same manner by one control unit.

[0072] Furthermore, since the opening adjustment mechanism 30 is in the shape of a ring, if a total of three connecting portions 32 are formed at intervals of 120 degrees, the opening adjustment mechanism 30 can be stably supported in a horizontal state. That is, the opening adjustment mechanism 30 moves in the up-down direction in a state of three-point support through the three operating mechanisms 40, and the three operating mechanisms 40 connected to the connecting portions 32 at the three points are always operated and controlled by a control unit in the same manner, so that the opening adjustment mechanism 30 can always remain horizontal.

[0073] The operating mechanism 40 is connected to the opening adjustment mechanism 30 and can operate the opening adjustment mechanism 30 in the up-down direction. That is, the operating mechanism 40 is configured to adjust the amount of the adjustment pin 31 inserted into the inner side of the baffle hole 21 by moving the opening adjustment mechanism 30 in the up-down direction, thereby adjusting the opening of the baffle hole 21. Therefore, by controlling the operation of the operating mechanism 40 to adjust the opening of the baffle hole 21, the gas conductance of the chamber 10 can be adjusted.

[0074] The operating mechanism 40 may include: a nut member 42 threadedly coupled to the lower portion of the connecting shaft 32; a pinion 43 meshing with the outer peripheral surface of the nut member 42; a motor 44, wherein the pinion 43 is disposed on the rotating shaft; and a housing 45 in which the lower portion of the connecting shaft 32, the nut member 42, the pinion 43, and the motor 44 are built. In addition, the operating mechanism 40 may further include a connecting shaft 41 connected to the connecting portion 32 of the opening adjustment mechanism 30.

[0075] The connecting shaft 41 can be inserted through the shaft hole 14 formed downwardly through the lower groove 12 of the chamber 10, and combined with the connecting portion 32 of the opening adjustment mechanism 30. That is, the opening adjustment mechanism 30 can be connected to the connecting shaft 41 of the operating mechanism 40 inserted through the shaft hole 14 formed through the bottom surface of the lower groove 12. The connecting shaft 41 is the output shaft of the operating mechanism 40, and can work in the vertical up and down direction.

[0076] The connecting shaft 41 and the connecting portion 32 only need to maintain the assembled state of the connecting shaft 41 and the connecting portion 32 when the connecting shaft 41 moves up and down, and there is no need to maintain a strong connection state. Therefore, for example, they can be assembled together in the following structure: a coupling protrusion (not shown) is formed on one of the two sides, and a coupling groove (not shown) is formed on the other side, and the coupling protrusion is pressed into the coupling groove. When this result is adopted, the assembly can be performed by simply applying pressure to the connecting portion 32 and the connecting shaft 41 in the axial direction, so there is no need to rotate the parts like a threaded structure, so the assembly can be performed very simply. However, the assembly structure using the coupling protrusion and the coupling groove is merely an example, and the embodiments of the present invention are not limited to this.

[0077] An external threaded portion 41 a having a threaded outer surface may be formed at the lower portion of the connection shaft 41 .

[0078] The nut member 42 is a disc-shaped member, and has an internal thread formed on the inner circumference thereof to be screwed with the external thread portion 41a of the connecting shaft 41, so that the connecting shaft 41 can be moved in the up-down direction. Therefore, when the nut member 42 is rotated at a predetermined position, the connecting shaft 41 can be raised or lowered according to its rotation direction.

[0079] The pinion gear 43 is a driving gear provided on the rotating shaft of the motor 44 and can mesh with gear teeth formed on the outer peripheral surface of the nut member 42. Therefore, the rotational force of the motor 44 is transmitted to the nut member 42, so that the nut member 42 can rotate.

[0080] As described above, the motor 44 is operated and controlled by a control unit (not shown). The rotation direction and amount of the motor 44 are controlled by the control unit, and ultimately the rise or fall of the connecting shaft 41 and the amount of movement thereof can be controlled.

[0081] Therefore, the opening adjustment mechanism 30 , more specifically, the up and down positions of the adjustment pin 31 , can be precisely controlled, whereby the gas conductance of the chamber 10 can be adjusted by controlling the opening of the baffle hole 21 through the adjustment pin 31 .

[0082] The housing 45 may contain the lower portion of the connecting shaft 41, the nut member 42, the pinion 43, the motor 44 and other components. The housing 45 may be fixedly disposed on a horizontal surface of one side of the semiconductor deposition equipment including the chamber 10. Therefore, in a state where the chamber 10, the baffle 20 and the housing 45 are fixed, the connecting shaft 41 may move up and down while adjusting the up and down position of the opening adjustment mechanism 30.

[0083] A support member 46 and a bearing 47 may be further provided inside the housing 45. That is, the support member 46 may be provided on the inner bottom surface of the housing 45, and the bearing 47 may be provided between the support member 46 and the nut member 42. The support member 46 may support the nut member 42 via the bearing 47. By providing the bearing 47 between the nut member 42 and the support member 46, the nut member 42 may be supported in a rotatable state.

[0084] On the other hand, a bellows 48 surrounding the outer portion of the connecting shaft 41 may be provided between the lower surface of the chamber 10 and the upper surface of the shell 45. The upper and lower ends of the bellows 48 are respectively closely attached to and fixed to the lower surface of the chamber 10 and the upper surface of the shell 45, and a seal 49 may be provided between the upper end of the bellows 48 and the lower surface of the process chamber 10 and between the lower end of the bellows 48 and the upper surface of the shell 45. Figure 3In the illustrated embodiment, for convenience, the seal 49 is shown to be formed only between the lower surface of the chamber 10 and the upper end of the bellows 48 .

[0085] As described above, by providing the bellows 48 and the seal 49 , it is possible to prevent gas from leaking through the shaft hole 14 .

[0086] Figure 6 FIG. 2 is a diagram showing a plurality of fixtures for setting the opening adjustment mechanism 30 at a correct position. The fixtures may include a first fixture 60 and a second fixture 70 .

[0087] The first clamp 60 is configured to be closely attached to the connection portion 32 to maintain the radial position of the opening adjustment mechanism 30. The first clamp 60 is a member having a flat cross-section and a semicircular shape (see Figure 2 ), in particular, the inner circumference is formed as a circular surface having the same curvature as the connecting portion 32 of the opening adjustment mechanism 30. Therefore, the connecting portion 32 can be placed on the inner circumference of the first clamp 60 (refer to Figure 2 , Figure 6 ).

[0088] A circular protrusion 61 may be formed on the lower surface of the first jig 60, and the protrusion 61 is inserted into the protrusion groove 15 formed on the bottom surface of the lower groove 12 of the chamber 10. Therefore, by inserting the protrusion 61 into the protrusion groove 15, the first jig 60 can be installed in the lower groove 12 of the chamber 10.

[0089] The number of the first clamps 60 is the same as the number of the connecting parts 32 so as to match one to one. Therefore, the three first clamps 60 may be firstly arranged at intervals of 120 degrees in the lower groove 12, and then the opening adjustment mechanism 30 may be arranged in the lower groove 12. In this case, by placing the plurality of connecting parts 32 of the opening adjustment mechanism 30 on the inner circumference of the corresponding first clamps 60, the opening adjustment mechanism 30 may be arranged at an accurate position so that the center of the opening adjustment mechanism 30 matches the center of the chamber 10, that is, the center of the center hole 11.

[0090] The second fixture 70 has a structure in which the adjustment pin 31 is inserted so that the center of the adjustment pin 31 and the baffle hole 21 match. That is, the second fixture 70 is a fixture for correctly positioning the adjustment pin 31 in the circumferential direction. The second fixture 70 is in the shape of a circular tube, and can be configured so that when inserted into the baffle hole 21 of the baffle 20, the upper end of the adjustment pin 31 is inserted into the inner diameter portion of the lower end. To this end, the second fixture 70 has an inner diameter of a size that allows a portion of the upper end of the adjustment pin 31 to be inserted. Although not shown, in order to make the depth of the second fixture 70 inserted (from the upper part of the baffle 20 downward) into the baffle hole 21 constant, a locking portion that is locked to the portion around the entrance of the baffle hole 21 can be formed on the outer peripheral surface of the second fixture 70.

[0091] By inserting the second clamp 70 into one of the multiple baffle holes 21 formed in the baffle 20 in the manner as described above and inserting the upper end of the adjusting pin 31 into the lower inner diameter portion of the second clamp 70, the centers of the baffle hole 21 and the adjusting pin 31 can be matched.

[0092] The process of setting the gas conductance regulating device according to the embodiment of the present invention using the first fixture 60 and the second fixture 70 is as follows.

[0093] First, the first jig 60 may be installed at three points of the lower groove 12 of the chamber 10 .

[0094] Next, the opening adjustment mechanism 30 may be arranged in a manner matching the first clamp 60 .

[0095] Next, the connection shaft 41 of the operating mechanism 40 may be connected to the connection portion 32 of the opening adjustment mechanism 30 .

[0096] Next, the first jig 60 can be removed and the baffle 20 can be assembled. Pin grooves 16 for assembling the baffle 20 are formed at multiple positions on the bottom surface of the chamber 10 along the circumferential direction, and correspondingly, the same number of pin grooves 23 are also formed on the lower surface of the baffle 20. Therefore, when the baffle 20 is assembled by inserting the pins 50 into the pin grooves 16 of the chamber 10 and inserting the pins 50 into the pin grooves 23, the baffle 20 can be set at an accurate position.

[0097] During the design, the position of the baffle hole 21, the setting position of the first clamp 60 and the position of the adjusting pin 31 of the opening adjustment mechanism 30 set by the first clamp 60 are considered according to the assembly position of the baffle 20. If the assembly reaches this stage, the positions of the baffle hole 21 and the adjusting pin 31 are almost matched.

[0098] In this state, by inserting the second clamp 70 into the baffle hole 21 and into the upper end of the adjustment pin 31 once or several times, the center of the baffle hole 21 and the adjustment pin 31 can be completely matched.

[0099] Then, if the shell 45 of the operating mechanism 40 is fixedly mounted on the corresponding mounting surface of the deposition device and the end of the bellows 48 is fixed, and the second clamp 70 is removed, the gas conductance regulating device of the present invention is set.

[0100] As described above, the gas conductance regulating device of the present invention adjusts the up and down position of the opening regulating mechanism 30 through the operating mechanism 40 , so that the opening of the baffle hole 21 of the baffle 20 can be adjusted through the regulating pin 31 .

[0101] Therefore, by adjusting the opening area (channel cross-sectional area) of the baffle holes 21, the gas conductance can be finely increased or decreased.

[0102] Therefore, precise thin film deposition can be achieved by finely adjusting the gas conductance during the deposition process, thereby contributing to improving the quality of semiconductors.

[0103] Furthermore, in the gas conductance regulating device of the present invention, the plurality of regulating pins 31 are formed in a circular ring-shaped opening regulating mechanism 30, and the three points of the opening regulating mechanism 30 are supported by the three operating mechanisms 40 operated and controlled in the same manner, so that the opening regulating mechanism 30 can always move up and down while maintaining a horizontal state.

[0104] Therefore, the operating state of each of the above-mentioned adjustment pins 31 relative to the above-mentioned baffle holes 21 is the same, and the openings of the above-mentioned baffle holes 21 can be adjusted to be the same, which helps to ensure the uniformity of the film deposition thickness according to the position on the wafer surface.

[0105] Furthermore, in the gas conductance adjusting device of the present invention, the bellows 48 for sealing the space around the connecting shaft 41 is provided between the lower surface of the chamber 10 and the housing 46 of the operating mechanism 40, thereby preventing gas from leaking through the shaft hole 14 formed in the chamber 10. Therefore, the vacuum state inside the chamber 10 can be stably maintained.

[0106] Furthermore, the gas conductance adjustment device of the present invention can accurately set the positions of the opening adjustment mechanism 30 and the adjustment pin 31 by using the first fixture 60 and the second fixture 70 .

[0107] Therefore, all the above-mentioned adjusting pins 31 are accurately matched with the plurality of above-mentioned baffle holes 21 , so that the openings of all the above-mentioned baffle holes 21 can be accurately, flexibly and evenly adjusted by the above-mentioned adjusting pins 31 .

[0108] As described above, the gas conductance adjustment device for a semiconductor process chamber of the present invention can more accurately adjust the gas conductance of the process chamber by adjusting the opening of the baffle hole of the baffle using a pin-shaped mechanism.

[0109] As described above, although the present invention has been described with reference to the embodiments shown in the accompanying drawings, it should be understood that these are merely exemplary, and that various modifications and equivalent other embodiments based on common knowledge in the field to which the present technology belongs may exist. Therefore, the true technical protection scope of the present invention is based on the scope of protection of the attached invention claims and should be determined based on the specific content of the above invention.

[0110] Industrial Applicability

[0111] The invention relates to a gas conductance regulating device for a semiconductor process chamber, which can be used in the industrial field of utilizing a vacuum chamber and carrying out a process requiring regulating gas conductance.

Claims

1. A gas conductance regulating device for a semiconductor process chamber, characterized in that: include: A baffle plate, including a plurality of baffle plate holes formed along a circumferential direction, is disposed on an inner bottom surface of the process chamber; an opening adjustment mechanism, disposed at the lower portion of the baffle, comprising a plurality of adjustment pins formed in a one-to-one matching manner with the baffle holes; and The operating mechanism is connected to the opening adjustment mechanism and is used to operate the opening adjustment mechanism in the up and down directions.

2. The gas conductance regulating device for a semiconductor process chamber according to claim 1, characterized in that: The opening adjustment mechanism is arranged inside the exhaust space, and the exhaust space is formed by the abutment of an annular upper groove formed on the lower surface of the baffle and an annular lower groove formed on the bottom surface of the process chamber where the baffle is arranged. The opening adjustment mechanism is connected to the connection shaft of the operating mechanism, and the connection shaft of the operating mechanism is inserted through a shaft hole formed through the bottom surface of the lower groove.

3. The gas conductance regulating device for a semiconductor process chamber according to claim 2, characterized in that: The above-mentioned opening adjustment mechanism comprises: The adjusting pin is formed by protruding upward from the upper surface of the annular body; and A plurality of connecting parts protrude downward at equal intervals along the circumferential direction on the lower surface of the main body. The connecting shaft is connected to the connecting portion.

4. The gas conductance regulating device for a semiconductor process chamber according to claim 3, characterized in that: The operating mechanism is provided in a manner of being connected to each connection portion of the opening adjustment mechanism, and is operated and controlled in the same manner by the same control unit.

5. The gas conductance regulating device for a semiconductor process chamber according to claim 3, characterized in that: The above operating mechanisms include: A nut component, threadedly coupled to the lower portion of the connecting shaft; A pinion gear meshing with the outer peripheral surface of the nut component; A motor, wherein the pinion gear is disposed on a rotating shaft; and The housing houses the lower portion of the connecting shaft, the nut component, the pinion gear, and the motor.

6. The gas conductance regulating device for a semiconductor process chamber according to claim 5, characterized in that: The above operating mechanisms include: A supporting component, disposed on the inner bottom surface of the housing; and The bearing is arranged between the supporting member and the nut member.

7. The gas conductance regulating device for a semiconductor process chamber according to claim 5, characterized in that: The above operating mechanisms include: a bellows, disposed between the lower surface of the process chamber and the upper surface of the shell, surrounding the outer side of the connecting shaft; and The sealing members are respectively arranged between the upper end of the bellows and the lower surface of the process chamber and between the lower end of the bellows and the upper surface of the shell.

8. The gas conductance regulating device for a semiconductor process chamber according to claim 3, characterized in that: The gas conductance regulating device of the semiconductor process chamber comprises: a first clamp, which is in close contact with the connecting portion and is used to maintain the radial position of the opening adjustment mechanism; and The second fixture is inserted with the above-mentioned adjusting pin and is used to match the above-mentioned adjusting pin with the center of the above-mentioned baffle hole.

9. The gas conductance regulating device for a semiconductor process chamber according to claim 8, characterized in that: The flat cross-section of the first clamp is semicircular, and the inner circumferential surface is formed as a circular surface having the same curvature as the connecting portion of the opening adjustment mechanism. A protrusion is formed on the lower surface, and the protrusion is inserted into the protrusion groove formed on the bottom surface of the lower groove of the process chamber.

10. The gas conductance regulating device for a semiconductor process chamber according to claim 8, characterized in that: The second clamp is in the shape of a circular tube, and when inserted into the baffle hole of the baffle, the upper end of the adjustment pin is inserted into the inner diameter portion of the lower end.

Images