Vacuum device for laser fine tuning of quartz crystal wafer

Abstract

The invention relates to the technical field of quartz crystal processing, and discloses a vacuum device for laser fine tuning of a quartz crystal wafer. A laser fine tuning system; a vacuumizing system; the control system is connected with the laser fine adjustment system and the vacuumizing system and comprises an acquisition module, a judgment module, an adjustment module and a storage module; the acquisition module is configured to determine the initial pumping rate of the vacuum pumping system based on the target vacuum degree and the volume information; the judgment module is configured to judge whether to adjust the initial air exhaust rate or not according to the air pressure change rate; the adjusting module is configured to determine the adjusting coefficient of the initial air exhaust rate according to the air exhaust influence factor and obtain the final air exhaust rate; the storage module is configured to store an air exhaust impact factor. According to the invention, accurate control and dynamic adjustment of the vacuumizing process are realized through the intelligent control system, and a stable and efficient environment is provided for fine adjustment of the quartz crystal wafer.

Description

Technical Field

[0001] The invention relates to the technical field of quartz crystal processing, and in particular to a vacuum device for laser fine-tuning of a quartz crystal wafer. Background Art

[0002] Quartz crystal wafer is an electronic component material with high precision and high stability, which has been widely used in many electronic devices. The reason why this material is important is that it plays a key role in electronic devices, especially in situations where precise frequency control is required. In the production process of quartz crystal wafers, fine-tuning is a crucial step, which directly determines the frequency stability and accuracy of the wafer. The accuracy and reliability of the fine-tuning process have a decisive influence on the performance of the final product. However, traditional fine-tuning methods usually face the challenges of insufficient processing accuracy and relatively low efficiency. These challenges limit the further improvement of quartz crystal wafer performance and also affect production efficiency and cost control.

[0003] Therefore, it is necessary to design a vacuum device for laser trimming of quartz crystal wafers to solve the problems existing in the current technology. Summary of the invention

[0004] In view of this, the present invention proposes a vacuum device for laser fine-tuning of quartz crystal wafers, aiming to solve the problems of low processing accuracy and low efficiency in the fine-tuning methods in the current technology.

[0005] The present invention proposes a vacuum device for laser trimming of a quartz crystal wafer, comprising:

[0006] A vacuum chamber with a through hole on the top;

[0007] A placement cavity is arranged on the top of the vacuum chamber, the bottom edge of the placement cavity is fixedly connected to the edge of the through hole, and a glass layer is arranged between the vacuum chamber and the placement cavity;

[0008] A laser fine-tuning system is arranged at the bottom of the vacuum chamber and inside the placement cavity, and the laser fine-tuning system is used to fine-tune the quartz crystal wafer;

[0009] A vacuum pumping system is located outside the vacuum chamber, the vacuum pumping system is connected to the vacuum chamber, and the vacuum pumping system is used to pump out the air inside the vacuum chamber;

[0010] A control system connected to the laser fine-tuning system and the vacuum system, wherein the control system includes a collection module, a judgment module, an adjustment module and a storage module;

[0011] The acquisition module is configured to acquire target vacuum degree and volume information of the vacuum chamber, and determine an initial pumping rate of the vacuum pumping system based on the target vacuum degree and volume information;

[0012] The judgment module is configured to control the acquisition module to acquire the air pressure change rate inside the vacuum chamber, and determine whether to adjust the initial pumping rate according to the air pressure change rate;

[0013] The adjustment module is configured to control the acquisition module to acquire gas information and temperature information inside the vacuum chamber when the judgment module determines to adjust the initial pumping rate, and calculate the pumping influence factor according to the gas information and temperature information; determine the adjustment coefficient of the initial pumping rate according to the pumping influence factor, and obtain the final pumping rate;

[0014] The storage module is configured to store the air extraction influencing factor.

[0015] Furthermore, the laser fine-tuning system comprises:

[0016] A fine-tuning platform, located inside the vacuum chamber and at the bottom of the vacuum chamber, and the fine-tuning platform is used to carry the quartz crystal wafer;

[0017] A mechanical arm is arranged inside the placement cavity, and one end of the mechanical arm is connected to the inner top wall of the placement cavity;

[0018] A laser emitter is arranged inside the placement cavity, the laser emitter is connected to the other end of the mechanical arm, and the emission direction of the laser emitter is toward the fine-tuning platform.

[0019] Further, when determining the initial pumping rate of the vacuum pumping system based on the target vacuum degree and volume information, it includes:

[0020] Determining a basic vacuum rate of the vacuum system according to the target vacuum degree;

[0021] Analyzing the volume information, determining whether to optimize the basic pumping rate based on the analysis result, and obtaining the initial pumping rate;

[0022] When determining the basic pumping rate of the vacuum pumping system according to the target vacuum degree, it includes:

[0023] Comparing the target vacuum degree with a first target vacuum degree and a second target vacuum degree, and determining a basic vacuuming rate of the vacuum pumping system according to the comparison result; wherein the first target vacuum degree is less than the second target vacuum degree;

[0024] When the target vacuum degree is less than or equal to the first target vacuum degree, determining the basic pumping rate to be a first pumping rate;

[0025] When the target vacuum degree is greater than the first target vacuum degree and less than or equal to the second target vacuum degree, determining the basic pumping rate to be the second pumping rate;

[0026] When the target vacuum degree is greater than the second target vacuum degree, the basic pumping rate is determined to be a third pumping rate.

[0027] Further, the volume information is parsed, and based on the parsing result, it is determined whether to optimize the basic pumping rate, and the initial pumping rate is obtained, including:

[0028] parsing the volume information to obtain the actual volume of the vacuum chamber;

[0029] Calculating a volume ratio of the actual volume to the preset volume, and determining whether to optimize the basic pumping rate according to the volume ratio;

[0030] When the volume ratio is greater than 0.8 and less than or equal to 1, it is determined that the basic pumping rate is not optimized, and the basic pumping rate is the initial pumping rate;

[0031] When the volume ratio is greater than 0 and less than or equal to 0.8, or when the volume ratio is greater than 1, it is determined that the basic pumping rate is optimized, and an optimization coefficient is determined according to the volume ratio to obtain the initial pumping rate.

[0032] Further, determining the optimization coefficient according to the volume ratio to obtain the initial pumping rate includes:

[0033] Comparing the volume ratio with a first volume ratio and a second volume ratio, and determining an optimization coefficient of the vacuum system according to the comparison result; wherein the first volume ratio is smaller than the second volume ratio;

[0034] Setting an optimization coefficient interval, wherein the optimization coefficient interval includes a first optimization coefficient, a second optimization coefficient, and a third optimization coefficient;

[0035] When the volume ratio is less than or equal to the first volume ratio, determining the optimization coefficient to be the first optimization coefficient, and taking the product of the first optimization coefficient and the basic pumping rate as the initial pumping rate;

[0036] When the volume ratio is greater than the first volume ratio and less than or equal to the second volume ratio, determining the optimization coefficient to be a second optimization coefficient, and taking the product of the second optimization coefficient and the basic pumping rate as the initial pumping rate;

[0037] When the volume ratio is greater than the second volume ratio, the optimization coefficient is determined to be a third optimization coefficient, and a product value of the third optimization coefficient and the basic pumping rate is used as the initial pumping rate.

[0038] Further, judging whether to adjust the initial air pumping rate according to the air pressure change rate includes:

[0039] Comparing the air pressure change rate with an air pressure change rate threshold, and determining whether to adjust the initial air pumping rate according to the comparison result;

[0040] When the air pressure change rate is within the air pressure change rate threshold, determining not to adjust the initial air pumping rate;

[0041] When the air pressure change rate is outside the air pressure change rate threshold, it is determined to adjust the initial pumping rate.

[0042] Furthermore, when calculating the gas extraction influence factor according to the gas information and the temperature information, it includes:

[0043] Analyze the gas information to obtain gas components and component ratios, and obtain a gas impact value corresponding to each gas component;

[0044] Parsing the temperature information to obtain a temperature characteristic value, and obtaining a temperature standard value corresponding to the temperature characteristic value;

[0045] The gas extraction influence factor is calculated according to the gas composition, gas influence value, composition ratio, temperature characteristic value and temperature standard value.

[0046] Furthermore, the air extraction influence factor is obtained by the following formula:

[0047]

[0048] Among them, I represents the extraction influence factor; n represents the number of gas components; Ci represents the component ratio of the i-th gas; Ei represents the gas influence value of the i-th gas; F(T) represents the temperature correction factor; Tt represents the temperature characteristic value; Tb represents the temperature standard value.

[0049] Further, determining the adjustment coefficient of the initial pumping rate according to the pumping influence factor and obtaining the final pumping rate includes:

[0050] Comparing the pumping influencing factor with historical data, determining the adjustment coefficient of the initial pumping rate according to the comparison result, and obtaining the final pumping rate;

[0051] When there is a historical pumping influence factor that is the same as the pumping influence factor in the historical data, the initial pumping rate is adjusted according to the historical adjustment coefficient corresponding to the historical pumping influence factor, and the product value of the historical adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0052] When there is no historical pumping influence factor identical to the pumping influence factor in the historical data, the difference between the pumping influence factor and the influence factor of the historical data is calculated one by one, and the minimum difference is extracted. The adjustment coefficient of the initial pumping rate is determined according to the minimum difference, and the final pumping rate is obtained.

[0053] Further, determining the adjustment coefficient of the initial pumping rate according to the minimum difference and obtaining the final pumping rate includes:

[0054] Comparing the minimum difference with the first minimum difference and the second minimum difference, and determining the adjustment coefficient of the final pumping rate according to the comparison result; wherein the first minimum difference is smaller than the second minimum difference;

[0055] Setting an adjustment coefficient interval, wherein the adjustment coefficient interval includes a first adjustment coefficient, a second adjustment coefficient, and a third adjustment coefficient;

[0056] When the first condition is identified, the adjustment coefficient is determined to be a first adjustment coefficient, and a product value of the first adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0057] When the second condition is identified, the adjustment coefficient is determined to be a second adjustment coefficient, and a product value of the second adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0058] When the third condition is identified, the adjustment coefficient is determined to be a third adjustment coefficient, and a product value of the third adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0059] Among them, the first condition is that the minimum difference is less than or equal to the first minimum difference; the second condition is that the minimum difference is greater than the first minimum difference and less than or equal to the second minimum difference; the third condition is that the minimum difference is greater than the second minimum difference.

[0060] Compared with the prior art, the beneficial effect of the present invention is that the vacuum device for laser fine-tuning of quartz crystal wafers provided by the present invention collects and analyzes the target vacuum degree and volume information of the vacuum chamber through the control system, realizing the intelligent setting of the initial pumping rate of the vacuum system, which not only improves the pumping efficiency of the device, but also ensures the stability and accuracy of the quartz crystal wafer during the fine-tuning process. In the specific implementation, the control system first determines the basic pumping rate according to the target vacuum degree, which is achieved through a preset corresponding relationship, ensuring that the pumping rate under different vacuum degree requirements can be set quickly and accurately; the control system analyzes the volume information of the vacuum chamber, and optimizes the basic pumping rate according to the volume ratio to obtain an initial pumping rate that is more in line with actual needs. During the pumping process, the control system monitors the pressure change rate inside the vacuum chamber in real time through the judgment module, and dynamically adjusts the initial pumping rate according to whether the pressure change rate is within the preset pressure change rate threshold. When the pressure change rate exceeds the threshold, the control system triggers the adjustment module, collects the gas information and temperature information inside the vacuum chamber, calculates the pumping influence factor, and determines the adjustment coefficient based on the influence factor to finally obtain the final pumping rate. This dynamic adjustment mechanism ensures the stability of the air pressure inside the vacuum chamber and further improves the accuracy and efficiency of the fine-tuning process. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0062] Figure 1 A schematic structural diagram of a vacuum device for laser trimming of a quartz crystal wafer provided by an embodiment of the present invention;

[0063] Figure 2 A structural block diagram of a control system of a vacuum device for laser trimming of a quartz crystal wafer provided in an embodiment of the present invention.

[0064] In the figure: 100, vacuum chamber; 110, vacuum pumping system; 121, robotic arm; 122, laser transmitter; 123, fine-tuning platform; 130, control system; 131, acquisition module; 132, judgment module; 133, adjustment module; 134, storage module; 140, quartz crystal wafer; 150, placement cavity; 160, glass layer. DETAILED DESCRIPTION

[0065] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features described in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0066] See also Figure 1 As shown, in some embodiments of the present application, this embodiment provides a vacuum device for laser trimming of a quartz crystal wafer 140, the device comprising:

[0067] The vacuum chamber 100 has a through hole on the top;

[0068] The placement cavity 150 is arranged on the top of the vacuum chamber 100, the bottom edge of the placement cavity 150 is fixedly connected to the edge of the through hole, and a glass layer 160 is arranged between the vacuum chamber 100 and the placement cavity 150;

[0069] A laser trimming system is disposed at the bottom of the vacuum chamber 100 and inside the placement cavity 150 , and the laser trimming system is used to perform trimming on the quartz crystal wafer 140 ;

[0070] A vacuum pumping system 110 is located outside the vacuum chamber 100. The vacuum pumping system 110 is connected to the vacuum chamber 100. The vacuum pumping system 110 is used to pump out the air inside the vacuum chamber 100.

[0071] The control system 130 is connected to the laser fine-tuning system and the vacuum system 110. The control system 130 includes a collection module 131, a judgment module 132, an adjustment module 133 and a storage module 134;

[0072] The acquisition module 131 is configured to acquire target vacuum degree and volume information of the vacuum chamber 100 , and determine an initial pumping rate of the vacuum pumping system 110 based on the target vacuum degree and volume information;

[0073] The determination module 132 is configured to control the acquisition module 131 to acquire the pressure change rate inside the vacuum chamber 100, and determine whether to adjust the initial pumping rate according to the pressure change rate;

[0074] The adjustment module 133 is configured to control the acquisition module 131 to acquire gas information and temperature information inside the vacuum chamber 100 when the judgment module 132 determines to adjust the initial pumping rate, and calculate the pumping influence factor according to the gas information and the temperature information; determine the adjustment coefficient of the initial pumping rate according to the pumping influence factor, and obtain the final pumping rate;

[0075] The storage module 134 is configured to store the pumping influencing factors.

[0076] In some embodiments of the present invention, the vacuum system 110 is preferably a vacuum pump.

[0077] In some embodiments of the present invention, the glass layer 160 is preferably a high-transparency, low-refractive glass layer, such as a calcium fluoride glass layer or a fused silica glass layer.

[0078] It is understandable that the vacuum device for laser fine-tuning of the quartz crystal wafer 140 provided in this embodiment collects and analyzes the target vacuum degree and volume information of the vacuum chamber 100 through the control system 130, and realizes the intelligent setting of the initial pumping rate of the vacuum pumping system 110, which not only improves the pumping efficiency of the device, but also ensures the stability and accuracy of the quartz crystal wafer 140 during the fine-tuning process. In specific implementation, the control system 130 first determines the basic pumping rate according to the target vacuum degree, which is achieved through a preset corresponding relationship, ensuring that the pumping rate under different vacuum degree requirements can be set quickly and accurately; the control system 130 analyzes the volume information of the vacuum chamber 100, and optimizes the basic pumping rate according to the volume ratio to obtain an initial pumping rate that is more in line with actual needs. During the pumping process, the control system 130 monitors the air pressure change rate inside the vacuum chamber 100 in real time through the judgment module 132, and dynamically adjusts the initial pumping rate according to whether the air pressure change rate is within the preset air pressure change rate threshold. When the air pressure change rate exceeds the threshold, the control system 130 triggers the adjustment module 133, collects the gas information and temperature information inside the vacuum chamber 100, calculates the pumping influence factor, and determines the adjustment coefficient based on the influence factor, and finally obtains the final pumping rate. This dynamic adjustment mechanism ensures the stability of the air pressure inside the vacuum chamber 100 and further improves the accuracy and efficiency of the fine-tuning process.

[0079] It can be understood that the vacuum device for laser fine-tuning of the quartz crystal wafer 140 provided in this embodiment realizes precise control and dynamic adjustment of the vacuuming process through the intelligent control system 130, providing a stable and efficient environment for fine-tuning the quartz crystal wafer 140.

[0080] Specifically, the laser trimming system includes:

[0081] A fine-tuning platform 123 is located inside the vacuum chamber 100 and at the bottom of the vacuum chamber 100 . The fine-tuning platform 123 is used to carry the quartz crystal wafer 140 .

[0082] A mechanical arm 121 is disposed inside the placement cavity 150, and one end of the mechanical arm 121 is connected to the inner top wall of the placement cavity 150;

[0083] The laser emitter 122 is disposed inside the placement cavity 150 . The laser emitter 122 is connected to the other end of the mechanical arm 121 . The emission direction of the laser emitter 122 is toward the fine-tuning platform 123 .

[0084] It is understandable that the laser fine-tuning system stably carries the quartz crystal wafer 140 through the fine-tuning platform 123, and the flexible movement of the mechanical arm 121 enables the laser emitter 122 to accurately align the target area on the wafer for fine-tuning, which not only improves the accuracy of fine-tuning, but also ensures the stability and safety during the fine-tuning process. In the specific implementation, the fine-tuning platform 123 adopts a high-precision drive mechanism, which can achieve micron-level displacement control to ensure the accuracy of the fine-tuning process; the mechanical arm 121 is made of high-strength, lightweight materials to ensure its stability and durability in a vacuum environment; the laser emitter 122 adopts advanced laser technology, which has the characteristics of high precision, high energy density and tunability, and can meet the needs of fine-tuning of different wafers. Through the precise control and dynamic adjustment of the laser fine-tuning system, the vacuum device provided in this embodiment can achieve efficient and accurate fine-tuning of the quartz crystal wafer 140, providing a strong guarantee for subsequent processing and application.

[0085] Specifically, when determining the initial pumping rate of the vacuum system 110 based on the target vacuum degree and volume information, it includes:

[0086] Determine a basic pumping rate of the vacuum system 110 according to a target vacuum degree;

[0087] Analyze the volume information, determine whether to optimize the basic pumping rate based on the analysis result, and obtain the initial pumping rate;

[0088] When determining the basic pumping rate of the vacuum pumping system 110 according to the target vacuum degree, it includes:

[0089] Compare the target vacuum degree with the first target vacuum degree and the second target vacuum degree, and determine the basic vacuum rate of the vacuum system 110 according to the comparison result; wherein the first target vacuum degree is less than the second target vacuum degree;

[0090] When the target vacuum degree is less than or equal to the first target vacuum degree, determining the basic pumping rate to be the first pumping rate;

[0091] When the target vacuum degree is greater than the first target vacuum degree and less than or equal to the second target vacuum degree, determining the basic pumping rate to be the second pumping rate;

[0092] When the target vacuum degree is greater than the second target vacuum degree, the basic pumping rate is determined to be the third pumping rate.

[0093] In some embodiments of the present invention, the target vacuum degree is an important parameter preset according to actual needs, which determines the air pressure level that the vacuum system 110 needs to achieve.

[0094] It is understandable that, in a specific implementation, the first target vacuum degree and the second target vacuum degree are set as two different thresholds, which are used to divide the target vacuum degree into three different intervals, and each interval corresponds to a basic pumping rate. This setting method enables the control system 130 to quickly and accurately determine the basic pumping rate according to the vacuum degree requirements of different intervals, providing a basis for subsequent optimization and adjustment. At the same time, by analyzing the volume information, the control system 130 can further optimize the basic pumping rate to obtain an initial pumping rate that is more in line with actual needs. This step ensures that the vacuum device can achieve efficient pumping in vacuum chambers 100 of different volumes, thereby improving the applicability and flexibility of the device.

[0095] Specifically, the volume information is parsed, and based on the parsing result, it is determined whether to optimize the basic pumping rate, and the initial pumping rate is obtained, including:

[0096] Analyze the volume information to obtain the actual volume of the vacuum chamber 100;

[0097] Calculate the volume ratio of the actual volume to the preset volume, and determine whether to optimize the basic pumping rate according to the volume ratio;

[0098] When the volume ratio is greater than 0.8 and less than or equal to 1, it is determined that the basic pumping rate is not optimized, and the basic pumping rate is the initial pumping rate;

[0099] When the volume ratio is greater than 0 and less than or equal to 0.8, or when the volume ratio is greater than 1, it is determined that the basic pumping rate is optimized, and the optimization coefficient is determined according to the volume ratio to obtain the initial pumping rate.

[0100] In some embodiments of the present invention, the actual volume is the actual size information of the vacuum chamber 100 obtained by high-precision measuring equipment, which reflects the actual space size of the vacuum chamber 100. The preset volume is a standard volume value set according to the expected use needs and performance requirements during the device design and manufacturing process. By comparing and calculating the actual volume with the preset volume, the volume ratio obtained can reflect the degree of deviation between the actual size of the vacuum chamber 100 and the expected size.

[0101] It is understandable that when the volume ratio is close to or equal to 1, it indicates that the actual volume of the vacuum chamber 100 is basically consistent with the preset volume. At this time, there is no need to optimize the basic pumping rate, because the basic pumping rate is already a relatively reasonable setting value under this volume. When the volume ratio deviates far from 1, that is, there is a large deviation between the actual volume and the preset volume, this may be caused by the use wear of the vacuum chamber 100, manufacturing errors or different models of chambers. In this case, the control system 130 needs to optimize the basic pumping rate according to the volume ratio to ensure the efficiency and stability of the pumping process.

[0102] Specifically, the optimization coefficient is determined according to the volume ratio to obtain the initial pumping rate, including:

[0103] Comparing the volume ratio with the first volume ratio and the second volume ratio, and determining the optimization coefficient of the vacuum system 110 according to the comparison result; wherein the first volume ratio is smaller than the second volume ratio;

[0104] Setting an optimization coefficient interval, wherein the optimization coefficient interval includes a first optimization coefficient, a second optimization coefficient, and a third optimization coefficient;

[0105] When the volume ratio is less than or equal to the first volume ratio, the optimization coefficient is determined to be the first optimization coefficient, and the product value of the first optimization coefficient and the basic pumping rate is used as the initial pumping rate;

[0106] When the volume ratio is greater than the first volume ratio and less than or equal to the second volume ratio, the optimization coefficient is determined to be the second optimization coefficient, and the product value of the second optimization coefficient and the basic pumping rate is used as the initial pumping rate;

[0107] When the volume ratio is greater than the second volume ratio, the optimization coefficient is determined to be the third optimization coefficient, and the product value of the third optimization coefficient and the basic pumping rate is used as the initial pumping rate.

[0108] It is understandable that the setting of the optimization coefficient is based on an in-depth study and analysis of the relationship between the volume ratio and the pumping efficiency. The first volume ratio and the second volume ratio are used as two key thresholds to divide the volume ratio into three different intervals, and each interval corresponds to an optimization coefficient. This setting method enables the control system 130 to accurately adjust the basic pumping rate according to the volume ratios of different intervals to obtain the best pumping effect. In specific implementation, the first optimization coefficient is usually set to a value less than 1, which is used to appropriately reduce the basic pumping rate when the volume ratio is small to avoid energy waste and equipment wear caused by excessive pumping. The second optimization coefficient is set to a value close to 1, which is used to keep the basic pumping rate unchanged when the volume ratio is moderate, to ensure the stability and efficiency of the pumping process. The third optimization coefficient is set to a value greater than 1, which is used to appropriately increase the basic pumping rate when the volume ratio is large to compensate for the increased difficulty of pumping due to the increase in chamber volume. By accurately setting and adjusting the optimization coefficient, the control system 130 can realize intelligent optimization of the initial pumping rate, ensuring that the vacuum device can achieve efficient pumping and stable air pressure control in chambers of different volumes. This not only improves the applicability and flexibility of the device, but also provides a more stable and efficient environment for fine-tuning the quartz crystal wafer 140.

[0109] Specifically, judging whether to adjust the initial pumping rate according to the air pressure change rate includes:

[0110] The air pressure change rate is compared with the air pressure change rate threshold, and whether to adjust the initial air extraction rate is determined according to the comparison result;

[0111] When the air pressure change rate is within the air pressure change rate threshold, it is determined that the initial air extraction rate is not adjusted;

[0112] When the air pressure change rate is outside the air pressure change rate threshold, it is determined that the initial air extraction rate is adjusted.

[0113] It is understandable that the air pressure change rate is an important indicator that reflects the speed of the air pressure change inside the vacuum chamber 100, and it is directly related to the stability and efficiency of the vacuum pumping process. In this embodiment, the air pressure change rate threshold is a key parameter preset according to actual needs, which is used to determine whether the current air pressure change rate is within an acceptable range. When the air pressure change rate is within the threshold, it indicates that the air pressure inside the vacuum chamber 100 is decreasing at a stable and reasonable rate, and there is no need to adjust the initial pumping rate. When the air pressure change rate exceeds the threshold, it may mean that the current pumping rate does not match the actual needs of the vacuum chamber 100, and corresponding adjustments need to be made to ensure the stability and efficiency of the pumping process.

[0114] Specifically, when calculating the extraction influence factor based on gas information and temperature information, it includes:

[0115] Analyze the gas information, obtain the gas composition and composition ratio, and obtain the gas impact value corresponding to each gas component;

[0116] Analyze the temperature information, obtain the temperature characteristic value, and obtain the temperature standard value corresponding to the temperature characteristic value;

[0117] The extraction influence factor is calculated based on the gas composition, gas influence value, composition ratio, temperature characteristic value and temperature standard value.

[0118] Specifically, the air extraction influence factor is obtained by the following formula:

[0119]

[0120] Among them, I represents the extraction influence factor; n represents the number of gas components; Ci represents the component ratio of the i-th gas; Ei represents the gas influence value of the i-th gas; F(T) represents the temperature correction factor; Tt represents the temperature characteristic value; Tb represents the temperature standard value.

[0121] In some embodiments of the present invention, the gas components include common gases such as oxygen, nitrogen, and water vapor, and the gas influence values ​​of oxygen, nitrogen, and water vapor are preferably 0.8, 0.6, and 1.2, respectively. These values ​​are based on experimental data and empirical analysis, and they reflect the degree of influence of different gases on the pumping process.

[0122] It is understandable that the temperature correction factor is used to compensate for the effect of temperature on the pumping process, because changes in temperature may affect the fluidity of the gas and the performance of the pumping system. In this embodiment, the temperature characteristic value Tt is the temperature information inside the vacuum chamber 100 obtained in real time by the temperature sensor, and the temperature standard value Tb is the standard temperature value set according to the expected use requirements and performance requirements during the device design and manufacturing process. By calculating and comparing the temperature characteristic value with the temperature standard value, the obtained temperature correction factor Ft can reflect the degree of deviation between the current temperature and the standard temperature, thereby achieving accurate correction of the pumping influence factor. This ensures that under different temperature conditions, the pumping influence factor can accurately reflect the actual gas state and pumping efficiency inside the vacuum chamber 100, providing a reliable basis for subsequent adjustments.

[0123] Specifically, the adjustment coefficient of the initial pumping rate is determined according to the pumping influence factor, and the final pumping rate is obtained, including:

[0124] Compare the pumping influencing factors with historical data, determine the adjustment coefficient of the initial pumping rate based on the comparison results, and obtain the final pumping rate;

[0125] When there is a historical pumping influence factor that is the same as the pumping influence factor in the historical data, the initial pumping rate is adjusted according to the historical adjustment coefficient corresponding to the historical pumping influence factor, and the product value of the historical adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0126] When there is no historical pumping influence factor identical to the pumping influence factor in the historical data, the difference between the pumping influence factor and the influence factor of the historical data is calculated one by one, and the minimum difference is extracted. The adjustment coefficient of the initial pumping rate is determined according to the minimum difference, and the final pumping rate is obtained.

[0127] It is understandable that historical data is a large amount of data accumulated through long-term experiments and practical applications, which records the corresponding relationship between the pumping influence factor and the adjustment coefficient under different pumping conditions, ensuring that the control system 130 can accurately adjust the initial pumping rate according to the pumping influence factor under different pumping conditions to obtain the best pumping effect.

[0128] Specifically, when determining the adjustment coefficient of the initial pumping rate according to the minimum difference and obtaining the final pumping rate, it includes:

[0129] Compare the minimum difference with the first minimum difference and the second minimum difference, and determine the adjustment coefficient of the final pumping rate according to the comparison result; wherein the first minimum difference is smaller than the second minimum difference;

[0130] Setting an adjustment coefficient interval, wherein the adjustment coefficient interval includes a first adjustment coefficient, a second adjustment coefficient, and a third adjustment coefficient;

[0131] When the first condition is identified, the adjustment coefficient is determined to be the first adjustment coefficient, and the product value of the first adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0132] When the second condition is identified, the adjustment coefficient is determined to be a second adjustment coefficient, and the product value of the second adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0133] When the third condition is identified, the adjustment coefficient is determined to be a third adjustment coefficient, and the product value of the third adjustment coefficient and the initial pumping rate is used as the final pumping rate;

[0134] Among them, the first condition is that the minimum difference is less than or equal to the first minimum difference; the second condition is that the minimum difference is greater than the first minimum difference and less than or equal to the second minimum difference; the third condition is that the minimum difference is greater than the second minimum difference.

[0135] It is understandable that the setting of the adjustment coefficient is based on in-depth analysis and learning of historical data to ensure that the best pumping effect can be obtained under different pumping conditions. The first adjustment coefficient < the second adjustment coefficient < the third adjustment coefficient. The first minimum difference and the second minimum difference are used as two key thresholds to divide the minimum difference into three different intervals, and each interval corresponds to an adjustment coefficient. This setting method enables the control system 130 to quickly and accurately determine the adjustment coefficient based on the minimum difference in different intervals, thereby achieving precise adjustment of the initial pumping rate. This not only improves the applicability and flexibility of the device, but also provides more reliable and efficient technical support for the fine-tuning of the quartz crystal wafer 140.

[0136] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0137] The present application is described with reference to flowcharts and / or block diagrams of methods, devices (systems) and computer program products according to embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0138] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0139] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0140] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A vacuum device for laser trimming of quartz crystal wafers, characterized in that: include: A vacuum chamber with a through hole on the top; A placement cavity is arranged on the top of the vacuum chamber, the bottom edge of the placement cavity is fixedly connected to the edge of the through hole, and a glass layer is arranged between the vacuum chamber and the placement cavity; A laser fine-tuning system is arranged at the bottom of the vacuum chamber and inside the placement cavity, and the laser fine-tuning system is used to fine-tune the quartz crystal wafer; A vacuum pumping system is located outside the vacuum chamber, the vacuum pumping system is connected to the vacuum chamber, and the vacuum pumping system is used to pump out the air inside the vacuum chamber; A control system connected to the laser fine-tuning system and the vacuum system, wherein the control system includes a collection module, a judgment module, an adjustment module and a storage module; The acquisition module is configured to acquire target vacuum degree and volume information of the vacuum chamber, and determine an initial pumping rate of the vacuum pumping system based on the target vacuum degree and volume information; The judgment module is configured to control the acquisition module to acquire the air pressure change rate inside the vacuum chamber, and determine whether to adjust the initial pumping rate according to the air pressure change rate; The adjustment module is configured to control the acquisition module to acquire gas information and temperature information inside the vacuum chamber when the judgment module determines to adjust the initial pumping rate, and calculate the pumping influence factor according to the gas information and temperature information; determine the adjustment coefficient of the initial pumping rate according to the pumping influence factor, and obtain the final pumping rate; The storage module is configured to store the air extraction influencing factor.

2. The vacuum device for laser trimming of quartz crystal wafer according to claim 1, characterized in that: The laser trimming system comprises: A fine-tuning platform, located inside the vacuum chamber and at the bottom of the vacuum chamber, and the fine-tuning platform is used to carry the quartz crystal wafer; A mechanical arm is arranged inside the placement cavity, and one end of the mechanical arm is connected to the inner top wall of the placement cavity; A laser emitter is arranged inside the placement cavity, the laser emitter is connected to the other end of the mechanical arm, and the emission direction of the laser emitter is toward the fine-tuning platform.

3. The vacuum device for laser trimming of quartz crystal wafer according to claim 1, characterized in that: When determining the initial pumping rate of the vacuum pumping system based on the target vacuum degree and volume information, it includes: Determining a basic vacuum rate of the vacuum system according to the target vacuum degree; Analyzing the volume information, determining whether to optimize the basic pumping rate based on the analysis result, and obtaining the initial pumping rate; When determining the basic pumping rate of the vacuum pumping system according to the target vacuum degree, it includes: Comparing the target vacuum degree with a first target vacuum degree and a second target vacuum degree, and determining a basic vacuuming rate of the vacuum pumping system according to the comparison result; wherein the first target vacuum degree is less than the second target vacuum degree; When the target vacuum degree is less than or equal to the first target vacuum degree, determining the basic pumping rate to be a first pumping rate; When the target vacuum degree is greater than the first target vacuum degree and less than or equal to the second target vacuum degree, determining the basic pumping rate to be the second pumping rate; When the target vacuum degree is greater than the second target vacuum degree, the basic pumping rate is determined to be a third pumping rate.

4. The vacuum device for laser trimming of quartz crystal wafer according to claim 3, characterized in that: The volume information is parsed, and based on the parsing result, it is determined whether to optimize the basic pumping rate, and the initial pumping rate is obtained, including: parsing the volume information to obtain the actual volume of the vacuum chamber; Calculating a volume ratio of the actual volume to the preset volume, and determining whether to optimize the basic pumping rate according to the volume ratio; When the volume ratio is greater than 0.8 and less than or equal to 1, it is determined that the basic pumping rate is not optimized, and the basic pumping rate is the initial pumping rate; When the volume ratio is greater than 0 and less than or equal to 0.8, or when the volume ratio is greater than 1, it is determined that the basic pumping rate is optimized, and an optimization coefficient is determined according to the volume ratio to obtain the initial pumping rate.

5. The vacuum device for laser trimming of quartz crystal wafer according to claim 4, characterized in that: Determining the optimization coefficient according to the volume ratio to obtain the initial pumping rate includes: Comparing the volume ratio with a first volume ratio and a second volume ratio, and determining an optimization coefficient of the vacuum system according to the comparison result; wherein the first volume ratio is smaller than the second volume ratio; Setting an optimization coefficient interval, wherein the optimization coefficient interval includes a first optimization coefficient, a second optimization coefficient, and a third optimization coefficient; When the volume ratio is less than or equal to the first volume ratio, determining the optimization coefficient to be the first optimization coefficient, and taking the product of the first optimization coefficient and the basic pumping rate as the initial pumping rate; When the volume ratio is greater than the first volume ratio and less than or equal to the second volume ratio, determining the optimization coefficient to be a second optimization coefficient, and taking the product of the second optimization coefficient and the basic pumping rate as the initial pumping rate; When the volume ratio is greater than the second volume ratio, the optimization coefficient is determined to be a third optimization coefficient, and a product value of the third optimization coefficient and the basic pumping rate is used as the initial pumping rate.

6. The vacuum device for laser trimming of quartz crystal wafer according to claim 1, characterized in that: When judging whether to adjust the initial air pumping rate according to the air pressure change rate, it includes: Comparing the air pressure change rate with an air pressure change rate threshold, and determining whether to adjust the initial air pumping rate according to the comparison result; When the air pressure change rate is within the air pressure change rate threshold, determining not to adjust the initial air pumping rate; When the air pressure change rate is outside the air pressure change rate threshold, it is determined to adjust the initial pumping rate.

7. The vacuum device for laser trimming of quartz crystal wafer according to claim 1, characterized in that: When calculating the gas extraction influence factor according to the gas information and temperature information, it includes: Analyze the gas information to obtain gas components and component ratios, and obtain a gas impact value corresponding to each gas component; Parsing the temperature information to obtain a temperature characteristic value, and obtaining a temperature standard value corresponding to the temperature characteristic value; The gas extraction influence factor is calculated according to the gas composition, gas influence value, composition ratio, temperature characteristic value and temperature standard value.

8. The vacuum device for laser trimming of a quartz crystal wafer according to claim 7, characterized in that: The air extraction influence factor is obtained by the following formula: Among them, I represents the extraction influence factor; n represents the number of gas components; Ci represents the component ratio of the i-th gas; Ei represents the gas influence value of the i-th gas; F(T) represents the temperature correction factor; Tt represents the temperature characteristic value; Tb represents the temperature standard value.

9. The vacuum device for laser trimming of quartz crystal wafer according to claim 1, characterized in that: Determining the adjustment coefficient of the initial pumping rate according to the pumping influence factor and obtaining the final pumping rate includes: Comparing the pumping influencing factor with historical data, determining the adjustment coefficient of the initial pumping rate according to the comparison result, and obtaining the final pumping rate; When there is a historical pumping influence factor that is the same as the pumping influence factor in the historical data, the initial pumping rate is adjusted according to the historical adjustment coefficient corresponding to the historical pumping influence factor, and the product value of the historical adjustment coefficient and the initial pumping rate is used as the final pumping rate; When there is no historical pumping influence factor identical to the pumping influence factor in the historical data, the difference between the pumping influence factor and the influence factor of the historical data is calculated one by one, and the minimum difference is extracted. The adjustment coefficient of the initial pumping rate is determined according to the minimum difference, and the final pumping rate is obtained.

10. The vacuum device for laser trimming of quartz crystal wafer according to claim 9, characterized in that: Determining the adjustment coefficient of the initial pumping rate according to the minimum difference and obtaining the final pumping rate includes: Comparing the minimum difference with the first minimum difference and the second minimum difference, and determining the adjustment coefficient of the final pumping rate according to the comparison result; wherein the first minimum difference is smaller than the second minimum difference; Setting an adjustment coefficient interval, wherein the adjustment coefficient interval includes a first adjustment coefficient, a second adjustment coefficient, and a third adjustment coefficient; When the first condition is identified, the adjustment coefficient is determined to be a first adjustment coefficient, and a product value of the first adjustment coefficient and the initial pumping rate is used as the final pumping rate; When the second condition is identified, the adjustment coefficient is determined to be a second adjustment coefficient, and a product value of the second adjustment coefficient and the initial pumping rate is used as the final pumping rate; When the third condition is identified, the adjustment coefficient is determined to be a third adjustment coefficient, and a product value of the third adjustment coefficient and the initial pumping rate is used as the final pumping rate; Among them, the first condition is that the minimum difference is less than or equal to the first minimum difference; the second condition is that the minimum difference is greater than the first minimum difference and less than or equal to the second minimum difference; the third condition is that the minimum difference is greater than the second minimum difference.

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