Apparatus and wafer mass metering device

Abstract

The apparatus comprises: a surface for supporting a wafer; a gas inlet on the surface; a plurality of suction devices for gripping the wafer above the surface and pulling or pulling the wafer toward the surface; a shared vacuum line in fluid communication with the gas inlet in the surface and the plurality of suction devices; and a flow restrictor in the flow path between the shared vacuum line and the gas inlet in the surface.

Description

Technical Field

[0001] The present invention relates to an apparatus, such as an apparatus for changing the temperature of a wafer, and to a wafer quality metrology device comprising such an apparatus. Background Art

[0002] Microelectronic devices are manufactured on semiconductor (eg silicon) wafers using a number of techniques, including deposition techniques and removal techniques. The semiconductor wafer may be further processed in a way that changes its quality, such as by cleaning, ion implantation, photolithography, and the like.

[0003] Measuring the variation in wafer quality at any aspect of a processing step is an attractive approach to achieving production wafer metrology. The wafer in question is weighed before and after the processing step of interest. The variation in quality is correlated to the performance of the production equipment and / or the desired properties of the wafer.

[0004] Processing steps performed on a semiconductor wafer may result in very small changes in the mass of the semiconductor wafer, which may need to be measured with high accuracy. For example, removing a small amount of material from the surface of a semiconductor wafer may reduce the mass of the semiconductor wafer by a few milligrams, and this change may need to be measured with a resolution on the order of ±100 μg or better.

[0005] At these high levels of measurement accuracy, errors in the measurement output caused by temperature variations in the semiconductor wafer being measured and / or temperature variations in the temperature of the measurement device can become significant.

[0006] The temperature of semiconductor wafers just after being processed in a production line may be 400-500°C or higher. After processing, the semiconductor wafers may be loaded into a wafer box for transportation. When the wafer box arrives at the wafer quality metrology device, the temperature of the semiconductor wafers may still be high, such as 70°C or higher. In contrast, the temperature of the wafer quality metrology device may be about 20°C. Therefore, there may be a significant temperature difference between the semiconductor wafer and the wafer quality metrology device.

[0007] This temperature difference may cause errors in the measurement output of the wafer quality metrology device. For example, if the semiconductor wafer has a temperature higher than the temperature of the measurement chamber of the wafer quality metrology device, air currents (e.g., convection currents) may be generated in the air in the measurement chamber, which may affect the measurement output. In addition, the air in the measurement chamber may be heated, thereby changing its density and pressure and thus changing the buoyancy force exerted by the air on the semiconductor wafer. This may also affect the measurement output.

[0008] WO 02 / 03449 describes a semiconductor wafer quality metrology method, the purpose of which is to reduce errors in the measurement output caused by temperature variations in a wafer quality metrology device or in the semiconductor wafer being measured. In the method described in WO 02 / 03449, a semiconductor wafer is taken out of a wafer cassette and placed on a passive heat transfer plate, which is thermally coupled to the chamber of a wafer quality metrology device before being placed on a measurement area of ​​the wafer quality metrology device. The passive heat transfer plate equalizes the temperature of the semiconductor wafer to the temperature of the chamber to within ±0.1°C, thereby avoiding or preventing the above-mentioned problems.

[0009] With such a heat transfer plate, a vacuum clamping mechanism can be used to clamp the wafer to the surface of the heat transfer plate to ensure good thermal contact between the surface and the wafer. For example, the surface can be provided with a vacuum groove or channel, and a vacuum pump is used to suck a gas such as air from the vacuum groove or channel to produce a lower pressure or reduced pressure in the vacuum groove or channel. This lower pressure causes the wafer to be clamped to the surface of the heat transfer plate, ensuring good thermal contact between the surface and the wafer. More specifically, the pressure difference between the lower pressure or reduced pressure in the vacuum groove or channel and the gas pressure above the wafer causes a force to act on the wafer toward the surface to hold the wafer against the surface. In addition, the force can also flatten the wafer against the surface, causing the wafer to conform to the surface.

[0010] However, if the wafer is curved or warped, it may become difficult to clamp the wafer to the surface, which may occur particularly with thin wafers. In particular, if the wafer is curved or warped, there may be poor contact between at least some parts of the wafer and the surface. This may mean that the wafer cannot be effectively clamped to the surface when gas is drawn from the vacuum groove or channel because one or more parts of the wafer are too far away from the vacuum groove or channel to be effectively clamped due to the curvature or warping of the wafer, which may mean that the thermal contact between the surface and the wafer is adversely affected. Therefore, it may take longer to cause the desired or predetermined change in the temperature of the wafer, or if the wafer is placed in contact with the surface for a predetermined period of time, the temperature change time of the wafer during the predetermined period of time may be shorter than expected.

[0011] The present invention has been designed in view of the above considerations. Summary of the invention

[0012] According to a first aspect of the present invention, there is provided an apparatus comprising: a surface for supporting a wafer; a gas inlet in the surface; a plurality of suction devices for gripping the wafer above the surface and pulling or drawing the wafer toward the surface; a shared vacuum line in fluid communication with the gas inlet in the surface and with the plurality of suction devices; and a flow restrictor in a flow path between the shared vacuum line and the gas inlet in the surface.

[0013] The apparatus according to the first aspect of the invention has a plurality of suction devices for grabbing the wafer above the surface and pulling or pulling the wafer toward the surface, the suction devices being in fluid communication with a shared vacuum line. When the wafer is lowered toward the surface of the apparatus, it may first be contacted by the plurality of suction devices above the surface. When suction is applied to the plurality of suction devices using a shared vacuum line, the plurality of suction devices may grab the wafer. The plurality of suction devices may then be used to pull or pull the wafer (or move the wafer) toward the surface. This may at least partially flatten the wafer, and / or cause the wafer to at least partially conform to the surface.

[0014] In addition, the apparatus according to the first aspect of the invention has one or more gas inlets in the surface, which are connected to a shared vacuum line. Thus, when the wafer is in contact with or close to the surface, and suction is applied to the gas inlets using the shared vacuum line, a lower pressure or reduced pressure may be generated in at least the portion between the surface and the wafer, causing the wafer to be gripped by the surface, or clamped to the surface. The lower pressure or reduced pressure may flatten or substantially flatten the wafer, and / or cause the wafer to conform or substantially conform to the surface.

[0015] This configuration is particularly advantageous when processing curved or warped wafers, which is more likely to occur when processing thin wafers. In particular, when processing curved or warped wafers, an apparatus having only a gas inlet (i.e., not including multiple suction devices) may not be able to effectively clamp the wafer due to the curved or warped shape of the wafer. As described above. This may result in poor or reduced thermal contact between the wafer and the surface when the apparatus is used to change the temperature of the wafer.

[0016] As a result, it may take longer to change the temperature of the wafer to the desired temperature, e.g., to achieve thermal equilibrium between the wafer and the surface. This will reduce the throughput of the device and is therefore not ideal. Alternatively, the change in wafer temperature achieved within the predetermined time period may be less than expected. In this case, when the wafer is removed from the surface after the predetermined time period, the temperature of the wafer may be different from the desired or expected temperature. As described above, this may result in errors in the mass metrology measurements performed on the wafer by the wafer mass metrology device and is therefore also not ideal.

[0017] Problems may also arise when a bent or warped wafer is clamped to a surface for purposes other than changing the temperature of the wafer, such as when supporting the wafer to process the upper surface of the wafer. For example, if the wafer is not properly clamped, processing of the upper surface of the wafer may not be performed properly, where the upper surface of the wafer remains warped or curved. Thus, the present invention is not limited to changing the temperature of a wafer, and is more generally applicable to apparatus for supporting a wafer.

[0018] In contrast, using the present invention, the wafer may first be contacted by a plurality of suction devices located above the wafer surface, and the plurality of suction devices may be used to grasp the wafer and to pull or draw (or move) the wafer toward the surface. Thus, the plurality of suction devices may be used to at least partially flatten a warped or curved wafer. For example, the plurality of suction devices may cause the wafer to at least partially conform to the shape of the surface. This may allow the wafer to be more effectively grasped or clamped by the gas inlet. This may improve thermal contact between the surface and the wafer when the device is used to change the temperature of the wafer. The gas inlet may alternatively or additionally be used to flatten or substantially flatten the wafer.

[0019] Therefore, by including the gas inlet and multiple suction devices of the present invention, for a curved or warped wafer, better clamping of the wafer to the surface can be achieved. In particular, by the combination of multiple suction devices and gas inlets, a curved or warped wafer can be flattened more effectively than with only one or more gas inlets.

[0020] The inventors have recognized that, using a configuration in which a gas inlet and multiple pumping devices are in fluid communication with a shared vacuum line as in the first aspect of the invention, when a wafer is in contact with the multiple pumping devices, excess vacuum in the shared vacuum line may be lost through the open gas inlet in the surface. This may mean that the multiple pumping devices may not be able to effectively or correctly grab the wafer, or pull or pull the wafer flat enough, because of insufficient suction or vacuum at the multiple pumping devices. Therefore, the above-mentioned problems, such as problems caused by reduced thermal contact between the wafer and the surface, may still occur.

[0021] The inventor has recognized that this problem can be solved by arranging separate electronically controllable valves in the flow paths leading to the gas inlet and the plurality of suction devices, respectively. However, the inventor has recognized that such a configuration will lead to increased complexity, increased required electronic components, and more complex control software.

[0022] Differently, the inventors have realized that this problem can be solved by providing the restrictor of the present invention in the flow path between the shared vacuum line and the gas inlet in the surface. In particular, when the wafer is in contact with multiple suction devices, the restrictor can sufficiently reduce the amount of vacuum lost through the gas inlet in the surface so that the multiple suction devices can effectively grab the wafer and pull or pull the wafer to be sufficiently flat, while still allowing enough vacuum through the gas inlet to grab the wafer or clamp the wafer to the surface.

[0023] Therefore, using the present invention, a curved or warped wafer can be clamped to the surface of the device more effectively without significantly increasing the complexity of the device, the number of electronic components, and the complexity of the control software. Therefore, this can reduce the cost and complexity of the device and the production of the device.

[0024] For example, when the apparatus is used to change the temperature of a wafer, using the present invention, a bent or warped wafer can be brought into good thermal contact with a hot plate without significantly increasing the complexity of the apparatus, the number of electronic components, and the complexity of the control software.

[0025] The approach taken by the present invention can also result in faster clamping of the wafer to the surface because there is no need to control the vacuum of the suction device to first clamp the wafer with the suction device, and then control the vacuum to the gas inlet to clamp the wafer using the gas inlet. Instead, since the vacuum is applied to the gas inlet and multiple suction devices at the same time, the gas inlet can clamp the wafer without any delay once the multiple suction devices have pulled or pulled (or moved) the wafer toward the surface.

[0026] Improving the speed at which wafers are clamped to the surface will improve the throughput of wafers through the tool, which may also improve the throughput of corresponding wafer mass metrology devices that subsequently perform mass metrology measurements on the wafers.

[0027] The device according to the first aspect of the present invention may have any one of the following optional features, or, where compatible, any combination of the following optional features.

[0028] There may be one or more gas inlets.

[0029] The apparatus may be used to support a wafer, or be configured to, or be adapted to support a wafer.

[0030] The device can be used to change the temperature of the wafer, and the surface can be used to exchange heat with the wafer.

[0031] Changing the temperature of the wafer may include cooling the wafer.

[0032] Changing the temperature of the wafer may include decreasing the temperature of the wafer.

[0033] Changing the temperature of the wafer may include bringing the wafer into thermal equilibrium, or substantially into thermal equilibrium, with the surface.

[0034] The device may be used to control the temperature of the wafer, or to change the temperature of the wafer to a predetermined temperature.

[0035] The wafer may be a semiconductor wafer.

[0036] The wafer may have a diameter of, for example, 200 mm, or 300 mm, or 450 mm.

[0037] The apparatus may be used to support a wafer having a predetermined diameter or to change the temperature of a wafer, or may be configured to support a wafer having a predetermined diameter or to change the temperature of a wafer. The predetermined diameter may be 200 mm, or 300 mm, or 450 mm.

[0038] The apparatus may be configured or adapted to vary the temperature of the wafer.

[0039] The surface may be configured to support a wafer.

[0040] A surface used to support a wafer may mean that the surface is configured to support some or all of the weight of the wafer.

[0041] A surface used to support a wafer may mean that the surface is configured to contact the wafer.

[0042] The surface may be configured to contact a majority of the surface of the wafer.

[0043] The surface may be configured to be in thermal communication with the wafer.

[0044] The surface being in heat exchange with the wafer may mean that if there is a temperature difference between the surface and the wafer, the surface will be in heat exchange with the wafer when the wafer is supported by the surface.

[0045] Thermal communication with the wafer may include heat transfer with the wafer or heat transfer with the wafer.

[0046] Thermally exchanging heat with the wafer may include receiving heat from the wafer.

[0047] Thermally exchanging with the wafer may include exchanging or transferring thermal energy with the wafer.

[0048] Thermally exchanging heat with the wafer may include receiving thermal energy from the wafer.

[0049] Thermal communication with the wafer may include heat conduction between the surface and the wafer.

[0050] Thermal communication with the wafer may include conduction of heat from the wafer to the surface.

[0051] The surface may be a surface of a body of the device. Thus, the device may include a body having the surface.

[0052] The surface may be a top surface of the device body.

[0053] The surface may include a thermally conductive material.

[0054] The surface may comprise aluminum.

[0055] The body may comprise aluminum.

[0056] The gas inlet may be used to at least partially create a lower pressure or reduced pressure between the surface and the wafer.

[0057] The gas inlet may be configured or adapted to at least partially create a lower pressure or reduced pressure between the surface and the wafer.

[0058] The gas inlet can be used to vacuum clamp the wafer to the device (the surface of the device).

[0059] The gas inlet may be configured or adapted to vacuum clamp the wafer to (the surface of) the device.

[0060] The gas inlet may refer to any type or shape or inlet or opening or hole or space through which gas may be sucked by a vacuum source such as a vacuum pump via a vacuum line.

[0061] There may be one or only one gas inlet.

[0062] There may be more than one gas inlet. For example, there may be a plurality of gas inlets which, in combination, may fulfil one or more of the functions of the above-mentioned gas inlets.

[0063] The gas inlet may alternatively be referred to as a vacuum inlet.

[0064] A plurality of suction devices may be configured, adapted, or operable to clamp a wafer above a surface.

[0065] A plurality of suction devices may be configured, adapted, or operable to pull or move (or move) the wafer to the surface.

[0066] The plurality of suction devices may be configured or adapted to retract or compress to pull or move (or move) the wafer to the surface.

[0067] Clamping the wafer may include clamping the wafer using suction and / or clamping the wafer using a vacuum.

[0068] Clamping the wafer may include clamping a surface of the wafer.

[0069] Clamping a wafer may mean engaging or holding or clamping a surface of a wafer.

[0070] The suction device may alternatively be referred to as a vacuum gripping device or a vacuum clamping device.

[0071] A plurality of suction devices contact the wafer and clamp the wafer while the wafer is spaced apart from the surface.

[0072] Multiple suction devices can clamp the underside of the wafer.

[0073] Pulling or pulling the wafer toward the surface may mean that the suction device applies a force to the wafer to pull or pull the wafer toward the surface.

[0074] Pulling or pulling the wafer toward the surface may include moving the wafer toward the surface and / or planarizing the wafer against the surface.

[0075] Pulling or pulling the wafer toward the surface may mean or include that the wafer is forced toward the surface due to a pressure differential between the gas pressure above the wafer and a lower or reduced pressure in a pumping device.

[0076] Pulling or pulling the wafer toward the surface may include making the wafer flatter, or less uneven.

[0077] Thus, multiple suction devices may be used to make the wafer flatter and / or more level and / or less uneven.

[0078] Pulling or pulling the wafer toward the surface may include deforming and / or bending the wafer.

[0079] Pulling or pulling the wafer toward the surface may mean moving or directing the wafer toward the surface.

[0080] The plurality of suction devices may be configured to pull or draw the wafer toward the surface to at least partially flatten a bent or warped wafer.

[0081] The plurality of suction devices may be configured to pull or draw the wafer toward the surface to cause a bent or warped wafer to at least partially conform to the shape of the surface.

[0082] A plurality of suction devices may be arranged in or at least partially in the surface.

[0083] The shared vacuum line may be a pipe or tube or passage or flow path along which the gas may flow.

[0084] The shared vacuum line may be referred to as a shared vacuum line or a single vacuum line.

[0085] A shared vacuum line may be used to apply or supply or provide vacuum or suction to a gas inlet and multiple suction devices.

[0086] The shared vacuum line can be connected directly or indirectly to the gas inlet and to multiple suction devices.

[0087] A shared vacuum line may be connected to a gas inlet in the surface and to multiple pumping devices.

[0088] Shared vacuum line means that the same vacuum line provides vacuum to both the gas inlet and the plurality of pumping devices. In other words, the shared vacuum line is shared by or between the gas inlet and the plurality of pumping devices.

[0089] Providing a vacuum may mean providing suction.

[0090] A shared vacuum line can provide vacuum or suction to both the gas inlet and multiple suction devices simultaneously.

[0091] A flow restrictor may mean a device, element or component used to restrict the ingress of gas.

[0092] Restricting gas flow may mean reducing or inhibiting or decreasing the flow of gas.

[0093] Restricting gas flow may mean reducing or inhibiting or decreasing gas flow without preventing or stopping gas flow.

[0094] The flow path may be a gas flow path.

[0095] The flow path may be a vacuum flow path.

[0096] The flow path may be a suction flow path.

[0097] The flow path may connect the shared vacuum line directly or indirectly to the gas inlet.

[0098] The flow restrictor may comprise a fixed restrictor. In other words, the restrictor may not be adjustable.

[0099] Alternatively, the flow restrictor may comprise an adjustable restrictor. In other words, the amount or degree to which the flow restrictor restricts the flow of gas through the flow path may be adjustable or variable.

[0100] The flow restrictor may be passive. In other words, the flow restrictor may not be actively controllable and / or electronically controllable.

[0101] The current limiter may be uncontrollable.

[0102] The current restrictor may be non-electronically controllable.

[0103] The current limiter may not be remotely controllable.

[0104] The current limiter may not have any electronic parts or components.

[0105] A flow restrictor may include a constriction or an orifice in a flow path, such as a fixed or non-variable constriction or an orifice in a flow path.

[0106] The device may include a body having a surface.

[0107] The flow restrictor may be located in the flow path inside the body. In other words, the flow restrictor may be located inside the body.

[0108] Alternatively, the flow restrictor may be located in the flow path outside the body. In other words, the flow restrictor may be located outside the body. For example, the flow restrictor may be located in a pipe or tubing connecting the shared vacuum line to the body.

[0109] The gas inlets in the surface may comprise vacuum grooves or channels in the surface.

[0110] Vacuum grooves or channels may be used to vacuum clamp the wafer to the surface.

[0111] The vacuum groove or channel may have one or more holes or openings therein that are fluidly connected to a shared vacuum line through which gas may be drawn from the vacuum groove or line, thereby causing the pressure in the vacuum groove or channel to drop or decrease.

[0112] The vacuum groove or channel may comprise or have the shape of a circular segment or arc.

[0113] Alternatively or additionally, the gas inlet in the surface may comprise a hole or opening in the surface.

[0114] There may be a plurality of such holes or openings in the surface. Each of the plurality of holes or openings may be in fluid communication with a shared vacuum line.

[0115] The plurality of holes or openings may be arranged in the shape of a circular segment or arc.

[0116] The plurality of holes or openings may be distributed over a large portion of the surface.

[0117] The gas inlet may include a channel or passageway below the surface and a plurality of holes or openings in the surface connected to the channel or passageway. Thus, when vacuum or suction is applied to the channel or passageway, the vacuum or suction is simultaneously applied to all holes or openings in the surface connected to the channel or passageway.

[0118] There may be multiple gas inlets in the surface, each inlet being fluidly connected to a shared vacuum line.

[0119] A flow restrictor may be located in the flow path between the shared vacuum line and the plurality of gas inlets.

[0120] The flow restrictor may be located in the flow path between the shared vacuum line and all of the plurality of gas inlets. In other words, all of the plurality of gas inlets may have their flow restricted by a single flow restrictor.

[0121] Alternatively, the apparatus may include a respective flow path between each of the plurality of gas inlets and the shared vacuum line, and a respective flow restrictor in the respective flow path. Thus, the suction or vacuum through each of the plurality of gas inlets may be individually or separately or independently limited by the respective flow restrictor.

[0122] For example, the apparatus may include a plurality of vacuum grooves or channels in a surface, each vacuum groove or channel having a respective flow path with a respective flow restrictor.

[0123] Alternatively, the apparatus may include a plurality of flow paths, each flow path being between a corresponding plurality of gas inlets and a shared vacuum line, and a corresponding flow restrictor in each flow path. In other words, groups or groups of gas inlets may be connected to the same flow path.

[0124] Multiple gas inlets of different groups or groups can be connected to a shared vacuum line through corresponding flow paths, so that vacuum or suction is applied. A specific group or group of gas inlets can be reached simultaneously through a single flow path. A corresponding flow restrictor can be provided for each flow path. Therefore, the suction or vacuum through each of the group or group of gas inlets can be individually or separately or independently limited by the corresponding flow restrictor.

[0125] There may be a plurality of gas inlets in the surface, which are connected together by channels or passages below. Thus, by providing vacuum or suction to the channels or passages, vacuum or suction may be provided to each gas inlet simultaneously.

[0126] The plurality of suction devices may each include a compressible bellows configured to be compressed when the suction device grasps the wafer, thereby pulling the wafer close to the surface. The distal end of the bellows may be configured or arranged to contact the bottom surface of the wafer to engage or clamp the bottom surface of the wafer.

[0127] A plurality of suction devices may be changeable between a first configuration in which the distal end of the bellows is positioned a predetermined distance above the surface and a second configuration in which the distal end of the bellows is closer to the surface than in the first configuration.

[0128] The distal end of the bellows may be referred to as the wafer contacting portion or wafer contacting part of the bellows.

[0129] The distal end of the bellows may include a pad or cup, such as a suction pad or cup.

[0130] The bellows may be a bellows suction cup.

[0131] The plurality of suction devices may each include a pad or a cup configured to contact the wafer. References to pads below may be replaced by references to cups, or suction pads or suction cups, unless incompatible.

[0132] The pad may be removable and / or detachable from the suction device.

[0133] The pads may be replaceable.

[0134] The pad may be removably connected to the suction device.

[0135] For example, the pads may be removable to facilitate cleaning or to replace the pads with pads made of a different material, such as for a different specific application.

[0136] For example, the pads can be removable and / or replaceable, so that pads that meet different material requirements can be included, such as with respect to cleanliness, lower risk of particle and metal contamination, conductivity of the pad and / or minimizing contact between the underside or back side of the wafer and other parts of the suction equipment (e.g., the bellows mentioned below), which contact may present a contamination risk.

[0137] The pad may be a resilient pad.

[0138] The pad may be elastically deformable.

[0139] The pads may be configured to engage the wafer and / or clamp the wafer or a surface of the wafer.

[0140] The pads may be configured to engage the wafer and / or to clamp the wafer by suction.

[0141] The pads may be suction pads or suction cups.

[0142] The pad may include a recess on an upper surface of the pad facing the wafer and a flow path through which gas may be drawn from the recess to create a lower or reduced pressure in the recess beneath the wafer.

[0143] The recess may be elastically deformable or elastically compressible.

[0144] The pad may be configured to be compressed when the suction device clamps the wafer to pull the wafer toward the surface.

[0145] Multiple suction devices can each be varied between a first configuration in which the pad or the top or upper surface of the pad is positioned a predetermined distance above the surface and a second configuration in which the pad or the top or upper surface of the pad is closer to the surface than in the first configuration.

[0146] In a first configuration, the suction device protrudes or extends from or above a surface.

[0147] The pads may change from a first configuration to a second configuration while clamping the wafer to pull or draw the wafer toward the surface.

[0148] In the second configuration, the pad may be flush or substantially flush with the surface. Thus, in the second configuration, a wafer held by the suction device may be in contact with the surface.

[0149] Each suction device may include a compressible bellows configured to be compressed when the suction device clamps the wafer to draw the wafer closer to the surface.

[0150] For example, when the suction device is clamping a wafer, vacuum applied to the suction device through the shared vacuum line may cause the bellows to be compressed.

[0151] The pad may be integral with the bellows, for example, formed as a single piece with the bellows, or connected to the bellows in a non-detachable manner. Alternatively, the pad may be removable and / or detachable from the bellows. For example, the pad may be detachably connected to the bellows.

[0152] The device may include a sensor for detecting the position of the wafer when the wafer is clamped by the suction device to verify the correct function or operation of the suction device, for example for safety and / or to prevent damage to the wafer.

[0153] Alternatively or additionally, the apparatus may comprise one or more sensors for detecting the position and / or configuration of one or more suction devices to verify proper function or operation of the suction devices, for example for safety and / or to prevent damage to the wafer.

[0154] The device may include a controller configured to control the operation of the device based on the output of the one or more sensors. For example, the controller may be configured to control the suction or vacuum applied to the shared vacuum line based on the output of the one or more sensors.

[0155] Each suction device may include a base received in an opening or hole or space in a surface, the base may be connected to the mat by a bellows, and gas may be sucked from above the mat through the mat, bellows and base.

[0156] Alternatively, the bellows may include an integral base formed as part of the bellows, wherein the base of the bellows is housed or received in the opening or hole or space in the surface.

[0157] The bellows may include a flow path extending from above the pad, through the pad, the bellows, and the base to below the base.

[0158] The bellows may be formed integrally with the pad, for example as a single piece.

[0159] The base, bellows and pad may be integral, eg formed as a single piece.

[0160] The base and the pad may form the lower and upper surfaces of the bellows, respectively.

[0161] The bellows and gasket may be formed from a resilient material such as rubber, for example nitrile rubber or silicone rubber.

[0162] The bellows, pad and base may be formed from a resilient material such as rubber, for example nitrile rubber or silicone rubber.

[0163] The apparatus may comprise a locator and / or a connector in an opening or hole or space in a surface for locating the base of the bellows on the surface and / or for connecting to the base of the bellows.

[0164] The retainer and / or connector may include a protrusion or a barb.

[0165] The bellows may be positioned and / or mounted on the device by means of a positioner and / or a connector.

[0166] The bellows may be positioned and / or mounted on a retainer and / or a connector.

[0167] The retainer and / or connector (eg, a protrusion or barb) may include a flow path or passageway that is connected to the flow path or passageway through the base, bellows, and gasket when the bellows is positioned or mounted on the retainer and / or connector.

[0168] The bellows may comprise a wave-like, or ridge-like, or undulating or pleated shape that is elastically compressible in the longitudinal direction of the bellows.

[0169] In some embodiments, the suction pad or suction cup may not contain a bellows. Therefore, the base of the suction pad or suction cup can be directly accommodated or received in an opening or hole or space in a surface, for example, in the same manner as described above.

[0170] As described above, the base of the suction pad or cup may be positioned or mounted on a locator and / or connector that is located or disposed in an opening or hole or space in a surface.

[0171] Alternatively, each suction device may include a lifting pin having a pad.

[0172] A lift pin may refer to a pin or rod or member that extends substantially perpendicular to a surface and that may be moved longitudinally relative to the surface to raise or lower the pin relative to the surface.

[0173] The apparatus may include one or more lifting mechanisms for lifting the lift pins relative to the surface.

[0174] One or more lift mechanisms may also be used to lower the lift pin relative to the surface.

[0175] The lift pins are movable between a first configuration in which the pads are located a predetermined distance above the surface and a second configuration in which the pads are closer to the surface, such as flush or substantially flush with the surface.

[0176] In a second configuration, the lift pin may be completely or substantially completely received in a hole in the device that passes through a surface of the device.

[0177] Each lift pin may have a flow path that allows gas to be drawn from above the pad. The flow path may be a vacuum flow path or a gas flow path. The flow path may be longitudinal.

[0178] The device may include a plate or block having the surface.

[0179] The apparatus may comprise a heat transfer plate, or a heat plate, or a thermalising plate having the surface.

[0180] The plate may be made of a material having high conductivity.

[0181] The plate may be made of metal such as aluminum.

[0182] The device may be used to passively cool the wafer. In other words, the device may not have any active cooling devices or means, such as a Peltier device.

[0183] Alternatively, the device may be used to actively cool the wafer. In other words, the device may include an active cooling device, such as a Peltier device.

[0184] The apparatus may further include a vacuum or suction source, such as a vacuum pump, fluidly connected to the shared vacuum line.

[0185] The device may include a valve for controlling vacuum or suction in or through the shared vacuum line. For example, the valve may be openable to allow gas to flow through the shared vacuum line, thereby applying vacuum or suction to the gas inlet and the plurality of suction devices through the vacuum source or suction source, and the valve may be closable to prevent gas from flowing through the shared vacuum line, so that the vacuum source or suction source does not apply vacuum or suction to the gas inlet and the plurality of suction devices.

[0186] The valve is operable to fluidly connect the gas inlet and the plurality of suction devices to a vacuum source or a suction source, and to fluidly disconnect the gas inlet and the plurality of suction devices from the vacuum source or the suction source.

[0187] The valve may comprise a solenoid. For example, the valve may be a solenoid valve.

[0188] The valve may be electronically controlled, for example by a controller of the device.

[0189] Each suction device may have a respective flow path connecting the suction device to the shared vacuum line, and each flow path may include a respective flow restrictor. Thus, each suction device may be provided with a respective flow restrictor.

[0190] According to a second aspect of the invention there is provided an apparatus comprising a device according to the first aspect of the invention and a vacuum source or suction source, such as a vacuum pump in fluid communication with a shared vacuum line of the device.

[0191] The device according to the second aspect of the present invention may have any one or more features of the first aspect of the present invention described above, unless incompatible.

[0192] According to a third aspect of the present invention, there is provided a wafer quality metrology apparatus comprising the device according to the first aspect of the present invention.

[0193] The device according to the third aspect of the present invention may have any one or more features according to the first aspect of the present invention described above, unless incompatible.

[0194] The mass metrology device may be used to measure the mass of the wafer, or may be configured to measure the mass of the wafer.

[0195] The mass metering device may comprise a measuring chamber.

[0196] The measuring chamber can be a weighing chamber and / or a mass measuring chamber.

[0197] The device may be thermally coupled to a measurement chamber.

[0198] The device may be thermally coupled to the exterior of the measurement chamber.

[0199] The device may be mounted on the measuring chamber, for example, outside the measuring chamber.

[0200] The device may be attached to the measurement chamber, for example to the outside of the measurement chamber.

[0201] The apparatus may further comprise a measuring device for measuring the weight and / or mass of the wafer inside the measuring chamber.

[0202] The measurement device may be used to generate a measurement output indicative of the weight and / or mass of the wafer.

[0203] The measuring apparatus may comprise a support, such as a plate, for supporting the wafer during the measurement.

[0204] The apparatus may also include a robot arm having an end effector for transferring the wafer.

[0205] The end effector may be configured to support the wafer from below while the end effector is transporting the wafer.

[0206] According to a fourth aspect of the present invention, there is provided a bellows assembly comprising a bellows and a bellows insert received in an end portion of the bellows.

[0207] Where compatible, the bellows assembly according to the fourth aspect of the invention may have any one of the following optional features, or any combination thereof (if compatible).

[0208] The bellows assembly may be used in the suction device of any other aspect of the invention described above.

[0209] The bellows insert may be configured to contact the wafer when the wafer contacts the distal end of the bellows assembly. In other words, the bellows insert may provide or form a wafer contact surface of the bellows assembly.

[0210] In an example, the body of the bellows insert may include or be made of PEEK (polyetheretherketone).

[0211] The bellows insert may include a material selected for properly contacting a wafer, such as a semiconductor wafer.

[0212] For example, one or more portions of the insert configured to contact the wafer may include or be made of a fluorinated elastomer or a perfluorinated elastomer. In a specific example, one or more portions may include or by Made.

[0213] Providing an insert means that the bellows need not be made of a material that has been selected to be suitable for contact with the wafer, since only the bellows insert contacts the wafer. This means that the bellows can be made of a material that is, for example, cheaper or more suitable for use in the bellows.

[0214] The end portion of the bellows may be a distal portion, or a top portion, of the bellows.

[0215] The outer shape of the body of the bellows insert may conform to the inner shape of the end of the bellows. In other words, the outer shape of the body of the bellows insert may match or correspond to the inner shape of the end portion of the bellows.

[0216] The outer shape of the body of the bellows insert may be a substantially frustoconical shape.

[0217] The bellows insert may provide a contact surface for the bellows assembly at the distal end of the bellows assembly. For example, the surface may be a major surface or face of the bellows insert.

[0218] For example, the surface may be substantially planar.

[0219] The bellows insert may include removable elements in a surface of the bellows insert.

[0220] The removable element may protrude or extend from or over a surface of the bellows insert.

[0221] The removable element may be configured to contact the wafer when the wafer is in contact with the distal end of the bellows assembly.

[0222] Since it is the removable element that contacts the wafer, only the removable element may need to be made of a material suitable for contacting the wafer. Therefore, the body of the bellows insert may be made of a different material, such as a cheaper material.

[0223] As mentioned above, the body of the bellows insert may comprise or be made of PEEK (polyetheretherketone),

[0224] For example, the removable element may include or be made of a fluorinated elastomer or a perfluorinated elastomer. In a specific example, the removable element may be made of Made.

[0225] The removable element may comprise an O-ring received in a groove in the surface of the bellows insert.

[0226] Therefore, the material that contacts the wafer can be easily selected or changed by selecting or changing the removable element to a removable element (eg, an O-ring) made of an appropriate material.

[0227] The bellows insert may include a retaining portion for retaining the bellows insert in the bellows.

[0228] The retaining portion may removably retain the bellows insert in the bellows.

[0229] The bellows may have an undulating or pleated shape, the retaining portion may have a width greater than a narrow portion of the undulating or pleated shape, and the retaining portion may be located on an opposite side of the narrow portion relative to the body when the bellows insert is received in the bellows.

[0230] Thus, when the bellows insert is inserted into the bellows, the retaining portion may deform the bellows by stretching the undulating or pleated shape so that the retaining portion passes through the narrow portion and is located on the opposite side of the narrow portion.

[0231] The portion of the bellows insert above or adjacent the retaining portion may be narrower than the retaining portion so that after insertion of the bellows insert, the bellows subsequently returns to its original shape, with the retaining portion of the bellows insert located on the opposite side of the narrow portion relative to the body of the bellows insert.

[0232] The retaining portion may be located at the narrower end of the frustoconical body of the bellows insert.

[0233] In this way, the bellows insert may be removably retained in the bellows.

[0234] The bellows insert may include one or more channels extending through the bellows insert that allow air to flow through the bellows insert into the bellows. Thus, a vacuum may be applied through the bellows insert passing through the bellows.

[0235] As described above, the bellows assembly of the fourth aspect of the present invention may be used in a suction device in a device according to any other aspect of the present invention described above.

[0236] According to a fifth aspect of the present invention, there is provided a bellows insert configured to be received in an end portion of a bellows.

[0237] The bellows insert according to the fifth aspect of the present invention may have any one of the following optional features, or any combination of the following optional features (if compatible).

[0238] The bellows insert may also have any of the features of the bellows insert in the fourth aspect of the present invention described above.

[0239] The end portion of the bellows may be a distal end portion of the bellows.

[0240] The outer shape of the body of the bellows insert may be substantially frusto-conical.

[0241] A surface of the bellows insert may be configured to provide a contact surface at the distal end of the bellows when the bellows insert is received in the bellows. This surface may be a major surface or face of the bellows insert.

[0242] The bellows insert may include removable elements in a surface of the bellows insert.

[0243] The removable element may comprise an O-ring received in a groove in the surface of the bellows insert.

[0244] The bellows insert may include a retaining portion for retaining the bellows insert in the bellows.

[0245] The retaining portion may include a portion having an increased width relative to an adjacent portion of the bellows insert.

[0246] The retaining portion may include a portion having an increased width at a narrower end of the frustoconical body of the bellows insert.

[0247] The bellows insert may include one or more channels extending through the bellows insert that allow air to flow through the bellows insert.

[0248] Bellows insert means an insert for use in a bellows.

[0249] The invention includes combinations of the described aspects and preferred features except where the combination is expressly disallowed or expressly avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0250] Embodiments and experiments will now be discussed with reference to the accompanying drawings, which illustrate the principles of the invention, in which:

[0251] Figure 1 is a schematic diagram of a top view of an apparatus according to an embodiment of the present invention.

[0252] Figure 2 yes Figure 1 Schematic diagram of a side view of the device.

[0253] Figure 3 yes Figure 1 Schematic diagram of a side view of the device.

[0254] Figure 4 is a schematic diagram of a suction assembly that can be used in one embodiment of the present invention.

[0255] Figure 5 yes Figure 4 Schematic diagram of a top view of a suction component.

[0256] Fig. 6A and 6B is a schematic diagram of another suction assembly that may be used in an embodiment of the present invention.

[0257] Fig. 7A and 7B is a schematic diagram of another suction assembly that may be used in an embodiment of the present invention.

[0258] Fig. 8A is a schematic diagram of a side view of an apparatus according to an embodiment of the present invention.

[0259] Figure 8B is a schematic diagram of a side view of an apparatus according to an embodiment of the present invention.

[0260] Fig. 9 is a schematic diagram of a side view of an apparatus according to an embodiment of the present invention.

[0261] Fig. 10A and 10B is a schematic diagram of a flow restrictor that may be used in embodiments of the present invention.

[0262] Fig.11 is a schematic diagram of an apparatus according to an embodiment of the present invention.

[0263] Fig.12 is a schematic diagram of a suction lift pin that may be used in one embodiment of the present invention.

[0264] Fig.13 yes Fig.12 Schematic diagram of a top view of a suction lift pin.

[0265] Fig.14 is a schematic diagram of a top view of an apparatus according to an embodiment of the present invention.

[0266] Fig.15 is a schematic diagram of an apparatus according to one embodiment of the present invention.

[0267] Fig.16 is a schematic diagram of a bellows insert according to one embodiment of the present invention.

[0268] Fig.17 is a schematic diagram of a cross-sectional view of a bellows assembly according to one embodiment of the present invention. DETAILED DESCRIPTION

[0269] Aspects and embodiments of the present invention will now be discussed with reference to the accompanying drawings. Further aspects and embodiments will be apparent to those skilled in the art. All documents mentioned herein are incorporated herein by reference.

[0270] Figures 1 to 3 An apparatus 1 for changing the temperature of a wafer according to a first embodiment of the present invention is shown.

[0271] In particular, the device 1 is used for cooling semiconductor wafers, such as silicon wafers.

[0272] The device 1 in this embodiment is used to passively cool the wafer. In other words, the device 1 in this embodiment does not include any powered cooling means / devices, such as a Peltier device. However, in other embodiments, the device 1 can be used to actively cool the wafer, such as using a powered cooling means / device, such as a Peltier device.

[0273] In an alternative embodiment, the apparatus 1 may be used to heat the wafer rather than cool it.

[0274] For example, the apparatus 1 may include or be a heat transfer plate, a heat plate, or a thermalizing plate.

[0275] The device 1 comprises a plate or block 3. The plate or block 3 is made of or comprises a material having a high thermal mass and a high thermal conductivity. The plate or block 3 may be made of or comprise a metal such as aluminum.

[0276] like Figures 1 to 3 As shown, the plate or block 3 has a surface 5 configured to support a wafer when the wafer is placed on the surface 5 on the plate or block 3. The surface 5 is the upper surface of the plate or block 3, and thus the upper surface of the device 1.

[0277] The surface 5 is configured to support the wafer by contacting the underside of the wafer, thereby supporting the weight of the wafer.

[0278] The surface 5 is configured to contact the wafer to support the wafer, and to exchange heat or heat energy with the wafer to change the temperature of the wafer. In other words, the surface 5 is used to perform heat transfer with the wafer to change the temperature of the wafer.

[0279] In particular, the surface 5 is configured to provide good thermal contact with the wafer, so that heat can be efficiently and / or effectively transferred from the wafer to the surface 5 by conduction.

[0280] The surface 5 may be referred to as the heat transfer surface of the plate or block 3 or of the device 1 .

[0281] The apparatus 1 may be used to change the temperature of a wafer having a predetermined diameter, for example 200 mm, or 300 mm, or 450 mm. Thus, the surface 5 may be configured to support a wafer having a predetermined diameter.

[0282] The apparatus 1 includes a vacuum clamping mechanism or suction mechanism to clamp the wafer to the surface 5 of the apparatus 1. In particular, the plate or block 3 includes a vacuum groove or channel 7 in the surface 5 of the plate or block 3, from which a gas such as air can be sucked using a vacuum source, thereby generating a lower pressure or reduced pressure in the vacuum groove or channel 7 below the wafer, thereby clamping the wafer to the surface 5 and / or gripping the wafer.

[0283] In particular, the vacuum groove or channel 7 is connected to the gas flow path or vacuum flow path via one or more holes or openings in the vacuum groove or channel 7 (e.g., one or more holes or openings in the base of the vacuum groove or channel 7), so that when suction is applied to the gas flow path, gas is sucked from the vacuum groove or channel 7 via the one or more holes or openings. Thus, the vacuum groove or channel 7 and / or the one or more holes or openings correspond to a gas inlet in the surface 5, through which the gas can be sucked using the vacuum or suction applied to the gas flow path. The gas flow path may include a pipe, or a conduit, or a passage, or a channel for conveying gas.

[0284] In an alternative arrangement, the vacuum groove or channel 7 may be replaced by a channel or passageway below the surface 5 having a plurality of holes or openings extending from the channel or passageway to the surface 5 (referred to as a buried channel or passageway). Thus, by applying vacuum or suction to the channel or passageway below the surface 5, vacuum or suction may be applied to a plurality of holes or openings simultaneously.

[0285] In addition, the apparatus 1 further comprises a plurality of suction assemblies 9 (or suction devices, or vacuum assemblies or vacuum devices) for grabbing the wafer and pulling or pulling (or moving) the wafer towards the surface 5 .

[0286] Each of the plurality of suction assemblies 9 is configured to grasp a wafer using suction or vacuum and to pull or move the wafer toward the surface 5 to at least partially flatten the wafer so that the wafer can then be clamped to the surface 5 using the vacuum grooves or channels 7 .

[0287] A plurality of suction assemblies 9 are positioned on or in the surface 5 of the plate or block 3 .

[0288] exist Figure 1 In the embodiment, the plurality of suction assemblies 9 are arranged outside the vacuum groove or channel 7, for example, closer to the periphery of the surface 5 than the vacuum groove or channel 7. Thus, the plurality of suction assemblies 9 are configured to grab the wafer radially outward of the position where the wafer is grabbed or clamped by the vacuum groove or channel 7. However, one or more suction assemblies may also be arranged inside the vacuum groove or channel 7 on the surface 5, for example, near or at the center of the surface 5. This may be advantageous for clamping a wafer that is bent or warped upward away from the center of the surface 5.

[0289] The plurality of suction assemblies 9 are configured to grasp the wafer at a plurality of discrete locations on the wafer, which correspond to the positions of the suction assemblies 9 .

[0290] The plurality of suction assemblies 9 are operable to at least partially planarize the wafer and / or at least partially conform the wafer to the surface 5 .

[0291] For example, Figure 2 As shown, the plurality of suction assemblies 9 have a first configuration, wherein the plurality of suction assemblies 9 extend from or above the surface 5 (or protrude from or above the surface 5 ) to contact or engage a wafer above the surface 5 .

[0292] In addition, for example, Figure 3 As shown, the plurality of suction assemblies 9 have a second configuration in which the plurality of suction assemblies do not extend from the surface 5 (or do not protrude from the surface 5 or above). In the second configuration, the top surface of the suction assembly 9 can be flush or substantially flush with the surface 5.

[0293] Figure 4 and Figure 5An example of a suitable suction assembly 9 that may be used in embodiments of the present invention is shown schematically. Fig. 6A , and 6B, and Fig. 7A ,and Figure 7B A further example of a suitable suction assembly 9 that may be used in embodiments of the present invention is schematically shown and described below. Of course, other suction assemblies may be used instead. Figures 4 to 7B Suction assembly shown.

[0294] like Figure 4 As shown, the suction assembly 9 comprises a base 11 for mounting the suction assembly 9 on the plate or block 3. For example, the base 11 can be positioned in a correspondingly shaped recess, hole or opening in the surface 5 of the plate or block 3. The base 11 forms the underside or bottom side of the suction assembly 9.

[0295] The base 11 has an opening or through hole 13 or vacuum inlet through which a gas, such as air, can be sucked in, for example using one or more vacuum pumps.

[0296] The suction assembly 9 further comprises a pad 15 which is located above and opposite the base 11. The pad 15 forms an upper side or top side of the suction assembly 9.

[0297] The pad 15 also has an opening or through hole 17 or vacuum inlet through which a gas, such as air, can be sucked in, for example using one or more vacuum pumps.

[0298] For example, pad 15 may be referred to as a suction pad or suction cup.

[0299] For example, pad 15 may be made of or substantially made of polyimide.

[0300] The lower side (or bottom side or surface) of the cushion 15 is connected to the upper side (or top side or surface) of the base 11 through the bellows 19. The base 11, the cushion 15 and the bellows 19 define a space or volume 21. For example, the base 11, the cushion 15 and the bellows 19 may enclose or partially or substantially enclose the space or volume 21.

[0301] The bellows 19 is compressible or contractible to reduce the size of the space or volume 21. The bellows 19 may be elastically compressible or contractible, for example so that when the compressive force on the bellows is reduced, the bellows 19 returns to a predetermined configuration. Alternatively, an additional elastic element or member (e.g., a spring) may be used to bias the pad 15 away from the base 11.

[0302] The compression of the bellows 19 reduces the spacing between the base 11 and the pad 15 and thus reduces the size of the space or volume 21 .

[0303] For example, the bellows 19 may be made of or substantially made of stainless steel.

[0304] The pad 15 includes a recess 23 in the top surface of the pad 15. In particular, the recess 23 is defined by a raised rim or lip or edge 25 at the periphery of the pad 15 top surface.

[0305] When the wafer 27 is lowered onto the apparatus 1, e.g. Figure 2 As shown, the wafer initially contacts pad 23 of suction assembly 9 in a first configuration in which it extends above surface 5. In particular, the lower surface of wafer 27 contacts the top surface of a raised rim or lip or edge 25 at the periphery of the top surface of pad 15.

[0306] When the wafer is in contact with the pad 15 in this manner, a second space or volume is defined by the recess 23 and the lower surface of the wafer 27 .

[0307] When a vacuum or suction is applied to the openings or through holes 13 in the base 11, gas is drawn from the space or volume 21 through the openings or through holes 13. This creates a lower or reduced pressure in the space or volume 21, which causes gas to be drawn from the recess 23 into the space or volume 21 via the openings or through holes 17 in the pad 15.

[0308] When the wafer 27 is in contact with the pad 15 as described above, the gas drawn from the recess 23 through the opening or through hole 17 in the pad 15 creates a lower pressure or reduced pressure in the second space or volume between the lower surface of the wafer 27 and the recess 23 to grip the wafer 27. Therefore, the wafer 27 is held against the top surface of the pad 15 by the force caused by the pressure difference between the lower pressure or reduced pressure in the second space or volume and the gas pressure above the wafer 27.

[0309] Once the wafer 27 is grasped by the pad 15, there is a pressure difference between the gas above the wafer 27 and the lower pressure or reduced pressure generated in the space or volume 21 through suction through the opening or through hole 13 in the base 11. This pressure difference causes a force on the pad 15 towards the base 11. In other words, the lower pressure or reduced pressure in the space or volume 21 sucks the pad 15 towards the base 11. This force causes the bellows 19 to compress, causing the pad 15 to move toward the base 11, thereby pulling or pulling the wafer. Therefore, the wafer 27 grasped by the pad 15 is pulled or pulled closer to (moved closer to) the surface 5 by the suction assembly 9. In other words, the wafer 27 is moved or pulled downward toward the surface 5 by the compression of the bellows 19 in the suction assembly 9.

[0310] This may result in the wafer being at least partially planarized and / or at least partially conformed to the surface 5 .

[0311] like Figure 3As shown, the suction assembly 9 is recessed or received in the surface 5 so that when the bellows 19 is compressed as described above, the top of the pad 15 is flush or substantially flush with the surface 5. Therefore, when the bellows 19 is compressed as described above, the wafer 27 is in contact with or adjacent to the surface 5. For example, each suction assembly 9 can be received in a recess, hole, or opening in the surface, which has a height equal to or substantially equal to the height of the suction assembly 9 when the bellows 19 is compressed a predetermined amount.

[0312] In addition, vacuum or suction is also applied to the vacuum groove or channel 7 so that a gas, such as air, is sucked from the vacuum groove or channel 7. By the suction assembly 9, when the wafer 27 contacts or moves close to the surface 5, a lower pressure or reduced pressure is generated in the space or volume defined by the lower surface of the wafer 27 and the vacuum groove or channel 7. The lower pressure or reduced pressure draws the wafer 27 toward the surface 5 so that the wafer 27 is clamped to the surface 5. In particular, the pressure difference between the gas pressure above the wafer 27 and the lower pressure or reduced pressure in the vacuum groove or channel 7 below the wafer causes a force on the wafer 27 toward the surface 5.

[0313] The above arrangement is particularly advantageous for gripping curved or warped wafers. In particular, when the wafer is curved or warped, a vacuum clamping mechanism or suction mechanism including only the vacuum groove or channel 7 may not be able to properly clamp the wafer to the surface 5, because due to the curvature or warping of the wafer, the lower surface of the wafer may not be close enough to the surface 5 at one or more locations, thereby failing to sufficiently seal the space or volume in the vacuum groove or channel 7.

[0314] If the wafer is not properly clamped to the surface 5, the heat exchange between the wafer and the surface 5 may be less effective because there may be poor contact between at least some portion of the wafer and the surface 5, so that the temperature of the wafer is not properly controlled. As described above, this may lead to subsequent errors in mass metrology measurements performed on the wafer. Alternatively or additionally, if the wafer is not properly clamped to the surface 5, the amount of time required to achieve a desired or predetermined change in the temperature of the wafer may increase because the heat transfer is less effective.

[0315] In contrast, using the above arrangement, a bent or warped wafer will first be grabbed by the suction assembly 9 at discrete locations when the wafer is spaced from the surface 5. As described above, the bent or warped wafer may be at least partially flattened when the suction assembly 9 pulls / pulls / moves the wafer toward the surface 5. Thus, when the wafer is brought into contact with or moved closer to the surface 5 by the suction assembly 9, the wafer may be less bent or warped than before, and thus may have better suction between the wafer and the surface 5. This may improve the gripping of the wafer by a vacuum clamping mechanism or suction mechanism, which includes a vacuum groove or channel 7 as described above.

[0316] Thus, using the present invention, the wafer can be properly clamped to the surface 5, and the temperature of the wafer can be properly controlled and / or more effectively controlled.

[0317] Fig. 6A and Figure 6B as well as Fig. 7A and Figure 7B An alternative example of a suction assembly 9 that may be used in embodiments of the present invention is shown, in lieu of the above reference Figure 4 and Figure 5 Suction assembly 9 is described.

[0318] like Fig. 6A and 6B As shown, in one embodiment, the suction assemblies 9 may each include a bellows 24 having an integral suction cup 26 at a first end (top or upper portion) of the bellows 24. In particular, the distal end of the bellows 24 provides or forms the suction cup 26. The bellows 24 may be made of an elastic material, such as rubber, such as nitrile rubber or silicone rubber.

[0319] For example, the bellows 24 may be referred to as a bellows suction cup.

[0320] The bellows 24 is elastically compressible.

[0321] The bellows 24 comprises a wave-like, or ridged, or undulating, or pleated shape, which is elastically compressible in the longitudinal direction of the bellows 24 .

[0322] The bellows 24 includes a through hole or flow path or passage 28 that extends along the longitudinal length of the bellows 24 from the suction cup 26 to a second end 30 (bottom or lower portion) of the bellows 24. The second end 30 is the base of the bellows 24.

[0323] For example, the second end 30 (or base) of the bellows 24 may be substantially cylindrical.

[0324] The second end 30 (or base) of the bellows 24 forms or comprises an integral base of the bellows 24 .

[0325] In use, the second end 30 (or base) of the bellows 24 is positioned in a hole or opening or recess in the surface 5. The hole or opening or recess includes a locator and / or connector, such as a protrusion or barb, which is configured to be received in the through hole or flow path 28 in the second end 30 (or base) of the bellows 24. This facilitates positioning and / or installation of the bellows 24 in or on the surface 5.

[0326] The protrusion or barb includes a flow path or passageway that connects to the through hole or flow path 28 of the bellows 24 when the bellows 24 is positioned and / or mounted on the protrusion or barb. Thus, vacuum or suction can be applied to the suction assembly 9 by applying vacuum or suction to the flow path or passageway in the protrusion or barb.

[0327] When the bellows 24 is mounted in this manner, the bellows 24 is vertical with the suction cup 26 positioned upward and spaced from the surface 5. In other words, the bellows 24 protrudes out of the hole or opening or recess in the surface 5 to a position above the surface 5.

[0328] When the wafer contacts the suction cups 26, such as by being lowered as described above, and suction or vacuum is applied to the through-holes or flow paths 28, the wafer is gripped by the suction cups 26. In particular, the pressure differential between the lower or reduced pressure in the suction cups 26 and the pressure of the gas (e.g., air) above the wafer causes the wafer to be forced toward the suction cups 26.

[0329] Because the suction cup 26 is formed of a resilient material, this force causes the suction cup 26 to compress and / or flatten.

[0330] Continued vacuum or suction applied to the through-holes or flow paths 28 causes the bellows 24 to be compressed longitudinally, thereby pulling or drawing the wafer toward the base 30 of the bellows 24 , ie, toward the surface 5 .

[0331] The second end 30 (or base) of the bellows is located in the hole or opening or recess in the surface 5 so that the upper surface of the suction cup 26 is flush or substantially flush with the suction cup 26 when the bellows is compressed in this manner.

[0332] Thus, the suction assembly 9 may be used to grab a wafer above a surface and direct or pull or move the wafer toward the surface in a similar manner as described above.

[0333] Fig. 7A and 7B An alternative example of a suction assembly 9 is shown that includes a suction cup 26 similar to the suction cup 26 described above. The suction cup 26 may have any of the features of the suction cup 26 described above.

[0334] The suction cup 26 has a base 30 that corresponds to the second end 30 (or base) described above and may have any of the features of the second end 30 (or base) described above.

[0335] The suction cup 26 also has a through hole or flow path 28 that extends through the suction cup 26 from the upper side of the suction cup 26 to the lower side of the suction cup 26, through the base 30 of the suction cup 26. The through hole or flow path 28 can have any of the features of the through hole or flow path 28 described above.

[0336] Therefore, the suction assembly 9 in this embodiment is Fig. 6A and Figure 6B The suction assembly 9 differs in that the bellows 24 is omitted and instead the suction cup has an integral base which mounts to a locator and / or connector in a hole or opening or recess in the surface 5 .

[0337] In use, the base of the suction cup 26 is positioned in a hole or opening or recess in the surface 5. The hole or opening or recess includes a locator and / or connector, such as a protrusion or barb, which is configured to be received in the through hole or flow path 28 in the base 30 of the suction cup 26. This facilitates the positioning and / or installation of the suction cup in or on the surface 5.

[0338] The protrusion or barb includes a flow path or passageway that connects to the through hole or flow path 28 of the suction cup 26 when the suction cup 26 is positioned and / or mounted on the protrusion or barb. Thus, vacuum or suction can be applied to the suction assembly 9 by applying vacuum or suction to the flow path or passageway in the protrusion or barb.

[0339] When the suction cup 26 is installed in this manner, the suction cup 26 is vertical, and the top surface of the suction cup 26 is positioned upward and spaced apart from the surface 5. In other words, the suction cup 26 protrudes from the hole or opening or recess in the surface 5 so that the top surface of the suction cup 26 is located above the surface 5.

[0340] When the wafer contacts the suction cups 26, such as by being lowered as described above, and suction or vacuum is applied to the through-holes or flow paths 28, the wafer is gripped by the suction cups 26. In particular, the pressure differential between the lower or reduced pressure in the suction cups 26 and the pressure of the gas (e.g., air) above the wafer causes the wafer to be forced toward the suction cups 26.

[0341] Because the suction cup 26 is formed of a resilient material, this force causes the suction cup 26 to compress and / or flatten, thereby pulling or moving the wafer to the base 30 of the suction cup 26 , and thus toward the surface 5 .

[0342] The base 30 of the suction cup 26 is located in the hole or opening or recess in the surface 5 so that when the suction cup 26 is compressed in this manner, the upper surface of the suction cup 26 is flush or substantially flush with the surface 5 .

[0343] Thus, the suction assembly 9 may be used to grab a wafer above a surface and pull or move the wafer toward the surface in a similar manner as described above.

[0344] Fig. 8A , Figure 8B and Fig. 9 It is shown how vacuum or suction is applied to the vacuum groove or channel 7 and the suction assembly 9 in an embodiment of the present invention.

[0345] like Fig. 8A , Figure 8B and Fig. 9 As shown, the vacuum groove or passage 7 and the suction assembly 9 are directly or indirectly connected to the same vacuum or suction line 29. Therefore, the vacuum groove or passage 7 and the suction assembly 9 are in fluid (i.e., gas) communication with the shared vacuum or suction line 29. The shared vacuum or suction line 29 is connected to a vacuum or suction source 31. For example, the vacuum or suction source 31 may include a pump, such as a vacuum pump.

[0346] The shared vacuum or suction line 29 may include pipes or tubes for conveying gas.

[0347] Thus, by means of the vacuum or suction source 31 , a gas such as air can be simultaneously drawn through the vacuum groove or passage 7 and the suction assembly 9 via the shared vacuum or suction line 29 .

[0348] As described above, the inventors have recognized that if the vacuum groove or passage 7 and the suction assembly 9 are connected to the same vacuum or suction line 29 as described above, the vacuum or suction may be lost through the vacuum groove or passage 7 before the suction assembly 9 has pulled or directed the wafer toward the surface 5 and sufficiently flattened the wafer so that it is effectively clamped by the vacuum groove or passage 7. This may result in the wafer being ineffectively clamped to the surface 5 and, therefore, in incorrect adjustment of the wafer temperature, or requiring a long time to reach a desired or predetermined temperature of the wafer.

[0349] To address this issue, embodiments of the present invention include a flow restrictor 33 in the flow path between the shared vacuum or suction line 29 and the vacuum groove or passage 7 to restrict the flow of gas from the vacuum groove or passage 7 toward the shared vacuum or suction line 29 .

[0350] In particular, because the flow of gas from the vacuum groove or channel to the shared vacuum or suction line 29 is restricted by the restrictor 33, a sufficiently low pressure or reduced pressure can be maintained in the suction assembly 9 for the suction assembly 9 to pull or direct the wafer toward the surface 5 and at least partially flatten the wafer without losing vacuum or suction through the vacuum groove or channel 7.

[0351] The flow restrictor 33 provides a constriction or orifice in the flow path (gas flow path or vacuum flow path) between the shared vacuum or suction line 29 and the vacuum groove or passage 7. For example, the flow restrictor 33 may include an orifice having a smaller diameter or cross-sectional area than adjacent or other portions of the flow path. In particular, the flow restrictor 33 may include a fixed restriction, such as a fixed orifice.

[0352] The flow path may be a pipe or a tube or a passage or a conduit for conveying the gas.

[0353] The flow restrictor 33 may be a passive flow restrictor.

[0354] The current limiter 33 may not be an electronically controllable current limiter.

[0355] The current restrictor may be a non-controllable current restrictor, such as a non-electronically and / or non-remotely controllable current restrictor.

[0356] The flow restrictor 33 may be adjustable, such as manually adjustable, to adjust the amount of restriction provided by the flow restrictor 33 .

[0357] like Fig. 8A As shown, in some embodiments, the flow restrictor 33 may be located in the plate or block 3.

[0358] For example, the plate or block 3 may include one or more first flow paths 35 (e.g., gas flow paths or vacuum flow paths) connected to the vacuum grooves or channels 7 and the shared vacuum or suction line 29, whereby gas can be sucked from the vacuum grooves or channels 7 to the shared vacuum or suction line 29. The restrictor 33 may be located in or on one or more first flow paths 35 in the plate or block 3. The first flow path may include a pipe or conduit or a passage or channel along which gas can flow in the plate or block 3.

[0359] The plate or block 3 may also include one or more second flow paths 37 connected to the suction assembly 9 and the shared vacuum or suction line 29, whereby gas may be sucked from the suction assembly 9 to the shared vacuum or suction line 29. The second flow paths 37 may include pipes or ducts or passages or channels along which gas may flow in the plate or block 3.

[0360] like Fig. 9 As shown, the flow restrictor 33 may alternatively or additionally be located on the outside of the plate or block 3 .

[0361] For example, the flow restrictor 33 may be located in or on a conduit or pipe that is outside the plate or block 3 and connects the shared vacuum or suction line 29 to one or more first flow paths 35. There may also be a second conduit that is outside the plate or block 3 and connects the shared vacuum or suction line 29 to one or more second flow paths 37.

[0362] Of course, in some embodiments, there may be more than one vacuum groove or channel 7, or other gas inlet, in the surface 5 to which vacuum or suction is applied. In particular, in other embodiments, there may be multiple gas inlets, such as multiple vacuum grooves or channels 7.

[0363] In such an embodiment, each of the multiple gas inlets may have a respective flow path connecting the gas inlet to a shared vacuum or suction line 29, and a respective flow restrictor 33 may be disposed in each flow path.

[0364] For example, in one embodiment, the surface may have two or more vacuum grooves or channels 7, each of which is connected to a shared vacuum or suction line 29 via a corresponding flow path, and wherein a corresponding flow restrictor 33 is provided in each flow path.

[0365] Thus, the suction or vacuum through each of the plurality of gas inlets may be individually or separately or independently limited by the respective restrictors.

[0366] In an alternative embodiment, different groups or groups of gas inlets can be connected to a shared vacuum or suction line 29 via corresponding flow paths, so that vacuum or suction is applied to a specific group or group of gas inlets simultaneously via a single flow path. A corresponding flow restrictor can be provided for each flow path.

[0367] Thus, the suction or vacuum through each group or grouping of gas inlets may be individually or separately or independently limited by a respective restrictor.

[0368] For example, a group or grouping of gas inlets may include a plurality of holes or openings in the surface 5, each hole or opening connected to a single channel or passageway below the surface, which is connected to a shared vacuum or suction line 29. A single flow restrictor may be provided in the flow path leading to the single channel or passageway. Of course, there may be more than one such channel or passageway, each having a corresponding group or grouping of gas inlets, a corresponding flow path, and a corresponding flow restrictor.

[0369] In some embodiments, a flow restrictor may also be provided in the respective flow path leading to each suction assembly 9. This may facilitate simultaneous or synchronous operation of the suction assemblies 9.

[0370] For example, in the absence of such a separate restrictor, the suction assemblies 9 can be compressed in stages and / or in batches, because during the compression of each suction assembly 9, the vacuum or suction of each suction assembly 9 changes according to the change in the compression resistance of each suction assembly.

[0371] The vacuum can be applied via a three-way valve 34 (e.g. Figure 8B The three-way valve can be connected to the ambient atmosphere via an ambient line 36 to switch the suction line 29 from vacuum to ambient pressure, thereby releasing the wafer from the vacuum grip. A filter 38 can be provided to ensure that only clean air is drawn into the vacuum system when the wafer is released.

[0372] Fig. 10A and 10B Some non-exhaustive examples of flow restrictors 33 that may be used in embodiments of the present invention are shown.

[0373] like Fig. 10A As shown, in some embodiments, the flow restrictor 33 may include a fixed constriction or orifice in the flow path.

[0374] like Fig. 10B As shown, in other embodiments, the restrictor 33 may include an adjustable constriction or orifice in the flow path. For example, the restrictor 33 may include a valve such as a needle valve that can be adjusted to adjust the size of the constriction or orifice in the flow path.

[0375] Thus, the flow restrictor 33 may be adjustable but not electronically controllable.

[0376] The flow restrictor 33 can be adjusted manually.

[0377] Of course, in other embodiments, the shape of the vacuum groove or channel 7 can be different from Figure 1 The shapes shown are different. For example, the vacuum groove or channel need not be circular and may, for example, instead comprise a segment or arc of a circle. Additionally or alternatively, in other embodiments, there may be more than one vacuum groove or channel 7.

[0378] As described above, in some embodiments, channel 7 may be located or contained or enclosed below surface 5 and may have multiple holes or openings through surface 5 to channel 7. Thus, when vacuum or suction is applied to channel 7, the vacuum or suction is applied to the holes or openings through the surface. A single restrictor may be provided for channel 7 so that flow through all of the multiple openings is simultaneously restricted by the single restrictor.

[0379] Of course, there may be more than one such channel 7 located or contained or enclosed below the surface, and a separate flow path and flow restrictor may be provided for each channel 7 .

[0380] Additionally or alternatively, in other embodiments, the number and / or positioning of the suction components 9 can be different from Figure 1 For example, there may be more than three suction assemblies 9, and / or the positioning of the suction assemblies 9 may be different. As described above, in embodiments of the present invention, one or more suction assemblies 9 may also be provided at the center of the surface 5 or its vicinity, and / or inside or radially inward of the vacuum groove or channel 7.

[0381] There may be more than three suction assemblies 9 .

[0382] In addition, in other embodiments, the structure of the suction component 9 can be Figure 4 , Figure 5 , Fig. 6A , Figure 6B , Fig. 7A and Figure 7B The structures shown are different.

[0383] In alternative embodiments, different types of vacuum inlets or gas inlets may be provided in the surface instead of or in addition to the vacuum grooves or channels 7 .

[0384] Figures 11 to 13 An alternative embodiment of the invention is shown in which the suction assembly 9 of the previous embodiment is replaced with a different suction assembly or device 39.

[0385] Figures 11 to 13 The device 41 shown may include Figure 1 to Figure 1 0 and any features of device 1 described above, unless incompatible.

[0386] The device 41 differs from the device 1 in that the suction assembly 9 in the device 1 is replaced by the suction assembly or device 39. The other features of the device 1 described above may be unchanged and are therefore included in the device 41.

[0387] The suction assembly or device 39 has the same function as the suction assembly 9, gripping the wafer above the surface 5 and then pulling / moving / drawing the wafer towards the surface 5 to at least partially planarize the wafer.

[0388] The suction assemblies or devices 39 each include a lifting pin 42, which can be raised and / or moved relative to the plate or block 3 to protrude above the surface 5 of the plate or block 3, or lowered relative to the plate or block 3 so that the lifting pin 42 is received inside the plate or block 3 and the top surface of the lifting pin 42 is flush or substantially flush with the surface 5.

[0389] In particular, each lift pin 42 is located within a hole or opening in surface 5 .

[0390] The apparatus 41 also includes one or more lifting mechanisms, such as one or more electronic actuators, which can be operated to raise or lower the lifting pins 42 relative to the plate or block 3.

[0391] like Fig.12 As shown, each lift pin 42 has a longitudinal passage or flow path 43 through which a gas such as air can be drawn, for example using Fig. 8A , 8B Or one of the arrangements shown in 9 and described above.

[0392] In addition, each lift pin 42 has a pad 45 at the top end of the lift pin 42. The pad 45 includes a recess 47 in the top surface of the pad 45 that is connected (in fluid communication) to the longitudinal passage or flow path 43. Thus, when suction is applied to the longitudinal passage or flow path 43, gas is drawn from the recess 47 in the pad 45.

[0393] The pad 45 may be a suction pad.

[0394] The pad 45 may be made of a flexible material.

[0395] Lift pins may be referred to as vacuum pins or suction pins.

[0396] As the wafer is lowered toward the surface 5 of the apparatus 41 and the lift pins 42 are raised above the surface 5, the wafer will first contact the pads 45 at the top of the lift pins 42, similar to Figure 2 The arrangement shown. The underside of the wafer will define a space or volume with the recess 47 in the top surface of the pad 45. When suction is applied to the longitudinal passage or flow path 43 and gas is drawn from the recess 47, a lower pressure or reduced pressure will be generated in the space or volume within the recess 47. This lower pressure or reduced pressure will cause the lower surface of the wafer to be grasped by the pad 45. Then, when the lift pins 42 are subsequently lowered when grasping the wafer, the wafer will be pulled or guided toward the surface 5 by the lift pins and will be at least partially flattened and in contact with the surface 5, or closer to the surface 5. The wafer can then be clamped to the surface 5 by suction applied through the vacuum groove or channel 7, as described above.

[0397] like Fig.11 As shown, the lift pins 42 are configured such that when the lift pins 42 are fully lowered relative to the plate or block 3 , the tops of the lift pins 42 are flush or substantially flush with the surface 5 of the plate or block 3 .

[0398] Fig.14 An alternative embodiment of the present invention is shown. This embodiment may have any features of the above-described embodiments unless they are incompatible.

[0399] The device 49 in this embodiment differs from the first embodiment described above in that the vacuum grooves or passages 7 are replaced by a plurality of holes or openings 51 in the surface 5. The other features of the device 1 described above may be unchanged and are therefore included in the device 49.

[0400] and Fig. 8A , Figure 8B and Fig. 9 Similar to the arrangement shown, one or more first flow paths 35 may be connected to a plurality of holes or openings 51 in the surface 5 and to a shared vacuum or suction line 29 so that gas may be sucked from the holes or openings 51 in the surface 5 in a manner similar to that described above.

[0401] When the wafer is in contact with or adjacent to the surface 5 and gas is drawn from the holes or openings 5, a lower or reduced pressure will be generated between the surface 5 and at least a portion of the wafer. Thus, the wafer will be clamped to and / or gripped by the surface 5 in a manner similar to that described above.

[0402] In some embodiments, each of the plurality of holes or openings 51 may have a respective flow path with a respective flow restrictor such that flow through each of the plurality of holes or openings 51 is independently and / or individually restricted.

[0403] Alternatively, the plurality of holes or openings 51 of different groups or groups may each include a respective flow path with a respective flow restrictor, such that the flow through the plurality of holes or openings 51 in a particular group or group is restricted by a single flow restrictor. As described above, the plurality of holes or openings 51 in a particular group or group may be connected together via a channel or passageway below the surface 5 (i.e., surrounded by the surface 5).

[0404] In any of the above embodiments, the apparatus may further include a plurality of lift pins configured to receive a wafer lowered onto the apparatus and to lower the wafer toward a surface of the apparatus. In the case where lift pins are included, the lift pins do not grip the wafer. The apparatus may further include one or more lift mechanisms for raising or lowering the plurality of lift pins.

[0405] When a wafer is loaded onto the apparatus, the wafer may initially be supported from below by an end effector of a robotic arm that is used to take the wafer from a wafer cassette. The end effector may be used to lower the wafer toward the surface of the apparatus until the wafer contacts and is supported by the lift pins. The end effector may then be withdrawn laterally from under the wafer. The lift pins may then be used to lower the wafer until the wafer contacts the suction assembly or lift pins described above.

[0406] Alternatively, these additional lift pins may be omitted and the wafer may be lowered directly onto the suction assembly lift pins described above.

[0407] Fig.15 is an example of a wafer quality metrology apparatus according to the present invention comprising any of the above-described devices.

[0408] Wafer quality metrology apparatus 53 includes an apparatus 55 for measuring the weight and / or mass of a wafer. Apparatus 55 includes a support 57 or plate for supporting a wafer during weight and / or mass measurements performed on the wafer by apparatus 55. Apparatus 55 is configured to provide a measurement output indicative of a change in the weight and / or mass of a wafer loaded on support 57, or indicative of a change in the weight and / or mass of a wafer, or indicative of a difference between the weight and / or mass of a wafer and a reference weight and / or mass.

[0409] The apparatus 55 is located within a measurement chamber 59 that forms a closed environment around the apparatus 55. For example, the measurement chamber 59 may maintain a substantially uniform air density, air pressure, and / or air temperature of the air surrounding the apparatus 55. The measurement chamber 59 has an opening (not shown), such as a slot of appropriate size in a side wall of the measurement chamber 59, to allow a wafer to be transferred into the measurement chamber 59 by an end effector of a robotic arm and positioned on the support 57. When not in use, the opening may be covered by an openable door or cover (not shown) to allow the measurement chamber 59 to be substantially closed or sealed when the apparatus 55 is used to perform measurements.

[0410] A temperature changing member 61 for changing the temperature of the wafer is located at the top of the measurement chamber 59 .

[0411] The temperature change component 61 may correspond to or may be a device according to any of the above-described embodiments. Therefore, the temperature change component 61 may have any features of the device according to any of the above-described embodiments.

[0412] The temperature changing component 61 is located right on top of the measurement chamber 59 so that there is good thermal contact between the temperature changing component 61 and the measurement chamber 59. The temperature changing component 61 is in direct physical contact with the measurement chamber 59. The temperature changing component 61 may be attached or fixed to the measurement chamber 61, for example, using one or more bolts (not shown) and / or a thermally conductive bonding layer (not shown).

[0413] Due to the good thermal contact between the temperature changing component 61 and the measuring chamber 59, the temperature changing component 61 can be substantially in thermal equilibrium with the measuring chamber 59, and thus can have substantially the same temperature as the measuring chamber 59 (when the heat load on the temperature changing component 61 is low). The device 55 can also be in thermal equilibrium with the measuring chamber 59, and thus can also have substantially the same temperature as the measuring chamber 59. In this way, the temperature changing component 61 can be substantially in thermal equilibrium with the device 55, and thus can have substantially the same temperature as the device 55 (when the heat load on the temperature changing component 61 is low).

[0414] When in use, the wafer to be measured is first placed on the temperature changing component 61 to reduce its temperature. As described above, the temperature changing component 61 may correspond to or may be a device according to any one of the above embodiments, and thus may include a suction assembly or device 9 or 39, and a groove of a channel or hole or opening 7 or 51, as well as the other features described above.

[0415] Therefore, even when processing a curved or warped wafer, the wafer can be effectively clamped to the surface 5 of the temperature change member 61, so that good thermal contact is achieved between the temperature change member 61 and the wafer. Thermal equilibrium between the wafer and the temperature change member 61 can be achieved in a short time, for example, the temperature difference between the temperature change member 61 and the wafer is less than 0.01°C within 20 seconds.

[0416] The wafer may be placed on the temperature change component 61 for a predetermined period of time sufficient to achieve thermal equilibrium between the wafer and the temperature change component 61. Typically, the temperature change component 61 and the measurement chamber 59 are in thermal equilibrium with each other (when the heat load on the temperature change component 61 is low) so that the wafer reaches the same temperature as the temperature of the measurement chamber 59.

[0417] Normally, the temperature of the wafer is higher than the temperature of the temperature changing member 61 and the temperature of the measurement chamber 59, and therefore normally the temperature changing member 61 cools the wafer (lowers the temperature of the wafer).

[0418] After the wafer is cooled by the temperature changing member 61, it is transported from the temperature changing member 61 to the measurement chamber 59 and positioned on the support member 57 of the apparatus 55 for measurement.

[0419] Device 55 is used to perform weight and / or mass measurements on a wafer. For example, device 55 can measure the weight and / or mass of a wafer.

[0420] The device 53 is configured to perform a calculation to calculate the mass of the wafer based on the results of the weight and / or mass measurement. The calculation may include performing a buoyancy correction to correct for the buoyancy of the wafer from the air in the measurement chamber 59. For example, the measurement chamber 59 may include one or more sensors for detecting the temperature and / or pressure and / or air humidity in the measurement chamber 59 to calculate the buoyancy of the wafer.

[0421] Of course, in other embodiments, the temperature changing component 61 may be located at a position similar to that of the measuring chamber 59. Fig.15 For example, in another embodiment, the temperature changing component 61 may not be mounted on the measurement chamber 59, and instead may be located to a side of the measurement chamber 59 and / or separate from the measurement chamber 59. In such an alternative embodiment, the temperature changing component 61 may or may not be thermally coupled to the measurement chamber 59, and thus may or may not be substantially in thermal equilibrium with the measurement chamber 59.

[0422] Additionally or alternatively, in other embodiments, the temperature changing component 61 may actively control its temperature using an active heating or cooling element (eg, a Peltier device).

[0423] Fig.16 and 17A bellows insert 63 according to another embodiment is shown. Fig.17 is a cross-sectional view showing the bellows insert 63 being received within the bellows 65 to form the bellows assembly 66 .

[0424] The bellows 65 may correspond to any bellows described above, for example, and the configuration of the bellows 65 is not limited to Fig.17 Specific configuration shown.

[0425] For example, the bellows insert 63 may be used in the Figures 1 to 15 any bellows in any device shown.

[0426] The bellows insert 63 is configured to be removably or detachably received or retained in the bellows 65. In particular, the bellows insert 63 is configured to be retained in at least a distal portion of the bellows 65, which may correspond to a pad or wafer contact portion 67 of the bellows 65.

[0427] More specifically, the outer shape of the bellows insert 63 corresponds to or matches the inner shape of the distal portion 67 of the bellows 65 .

[0428] In the present embodiment, the bellows insert 63 or the body of the bellows insert 63 has a substantially frustoconical shape, wherein the angled outer surface of the frustoconical shape corresponds to or matches the angled inner surface of the distal portion 67 of the bellows 65 .

[0429] Bellows insert 63 has a substantially planar major face or surface 69 configured to be located at the distal end 67 of bellows when bellows insert 63 is retained in bellows 63. Major face or surface 69 is configured to contact the wafer when the wafer is in contact with bellows 67.

[0430] Bellows insert 63 includes a plurality of through holes or apertures 71 through which air can be drawn into bellows 67 from above a major face or surface 69 of bellows insert 63 when bellows insert 63 is retained in bellows 67. In particular, each through hole is a passage through bellows insert 63.

[0431] The bellows insert 63 includes a groove or channel 73 in the major face or surface 69 of the bellows insert 63, in which an O-ring 75 is received. The O-ring protrudes from the groove or channel 73 above the major face or surface 69 so that when the wafer is in contact with the bellows 67, the top surface of the O-ring contacts the wafer.

[0432] Thus, the material of the bellows insert that contacts the wafer may be varied by changing the material of the O-ring, for example to optimize one or more properties of the material for the specific material of the wafer.

[0433] For example, the O-ring may include or be made of a fluorinated elastomer or a perfluorinated elastomer. In a specific example, the O-ring may include or made thereof.

[0434] The body of the bellows insert 63 may be made of, for example, PEEK.

[0435] The bellows insert 63 also includes a retaining portion or feature 77 that is configured to removably retain the bellows insert 63 within the bellows 65 when the bellows insert 63 is received within the bellows 65 .

[0436] In particular, the bellows 65 has an undulating or pleated shape, wherein the interior width of the bellows 65 varies between a minimum width at the inner vertices of the undulating or pleated shape and a maximum width at the outer vertices of the undulating or pleated shape.

[0437] The retaining portion 77 of the bellows insert 63 has a width greater than the narrow portion in the undulating or pleated shape of the bellows 65 in the distal portion of the bellows 65, and is configured to be located on the opposite side of the narrow portion of the body of the bellows insert 63 when the bellows insert 63 is received in the bellows 65.

[0438] The retaining portion 77 is located at the narrower end of the frustoconical shape of the body of the bellows insert 63 and has a width substantially equal to the narrow portion of the undulating or pleated shape of the bellows 65 .

[0439] Thus, when bellows insert 63 is inserted into bellows 65, retaining portion 77 may deform the bellows by stretching the undulating or pleated shape so that retaining portion 77 passes through the narrow portion and is positioned on the opposite side of the narrow portion relative to the body.

[0440] Then, the bellows can return to its original shape, with the narrow portion positioned around the narrower end of the frustoconical body of the bellows insert 63, and the retaining portion 77 located on the opposite side of the narrow portion relative to the body. In this way, the bellows insert 63 can be removably retained in the bellows 65.

[0441] The features disclosed in the above description, or in the following claims, or in the accompanying drawings, expressed in their specific form or according to means for performing the disclosed functions, or methods or procedures for obtaining the disclosed results, may be used to realize the invention in various forms, either alone or in any combination of such features, as the case may be.

[0442] Although the present invention has been described in conjunction with the above exemplary embodiments, many equivalent modifications and variations will be apparent to those skilled in the art in light of the present disclosure. Accordingly, the exemplary embodiments of the present invention set forth above are to be considered illustrative rather than restrictive. Various changes may be made to the embodiments without departing from the spirit and scope of the present invention.

[0443] To avoid any doubt, any theoretical explanations provided in this article are intended to enhance the reader's understanding. The inventors of this case do not wish to be bound by any of these theoretical explanations.

[0444] Any section headings used herein are for organizational purposes only and are not to be construed as limitations of the subject matter described.

[0445] Unless the context requires otherwise, throughout the specification (including the claims below) of this invention, the terms "comprise" and "include," and variations such as "comprises," "comprising," and "including," will be understood to imply the inclusion of stated integers or steps, or groups of integers or steps, but not the exclusion of any other integers or steps, or groups of integers or steps.

[0446] It should be noted that the singular forms "a", "an", and "the" used in the specification and the appended claims include plural references unless the context clearly indicates otherwise. Ranges may be expressed herein as from "about" a particular value and / or to "about" another particular value. When such a range is expressed, another embodiment includes from the particular value and / or to the other particular value. Similarly, when values ​​are expressed as approximations, by use of the antecedent "about", it should be understood that the particular value forms another embodiment. The term "about" in relation to a value is optional and means, for example, + / - 10%.

Claims

1. A device, wherein include: a surface for supporting the wafer; a gas inlet in said surface; a plurality of suction devices for gripping the wafer above the surface and pulling or tugging the wafer toward the surface; a shared vacuum line in fluid communication with the gas inlet in the surface and the plurality of suction devices; as well as A flow restrictor is in the flow path between the shared vacuum line and the gas inlet in the surface.

2. The device according to claim 1, in, The device is used to change the temperature of the wafer, and the surface is used to exchange heat with the wafer.

3. The device according to claim 1 or 2, in, The flow restrictor may include a fixed restriction or an adjustable restriction.

4. The device according to any one of the preceding claims, in, The flow restrictor comprises a constriction or orifice in the flow path.

5. The device according to any one of the preceding claims, in, The apparatus includes a body having the surface, and wherein the flow restrictor is located in the flow path within the body.

6. The device according to any one of claims 1 to 4, in, The apparatus includes a body having the surface, and wherein the flow restrictor is located in the flow path outside the body.

7. The device according to claim 6, in, The flow restrictor is located in a conduit or tube that connects the shared vacuum line to the body.

8. The device according to any one of the preceding claims, in, The gas inlet in the surface comprises a vacuum groove or channel in the surface.

9. The device according to any one of the preceding claims, in, The gas inlets in the surface comprise holes or openings in the surface.

10. The device according to any one of the preceding claims, in, There are a plurality of gas inlets in the surface, each of the plurality of gas inlets being in fluid communication with the shared vacuum line.

11. The device according to claim 10, in: The flow restrictor is located in the flow path between the shared vacuum line and the plurality of gas inlets; or The apparatus comprises a respective flow path between each of the plurality of gas inlets and the shared vacuum line and a respective flow restrictor in each of the flow paths; or The apparatus includes a plurality of flow paths and a respective flow restrictor in each of the plurality of flow paths, each of the plurality of flow paths being located between a respective gas inlet of the plurality of gas inlets and the shared vacuum line.

12. The device according to any one of the preceding claims, in, The plurality of suction devices each include a pad or a cup configured to contact the wafer.

13. The device according to claim 12, in, The pad or cup is a suction pad or suction cup.

14. The device according to claim 12 or 13, in, Each of the multiple suction devices is capable of changing between a first configuration and a second configuration, wherein the first configuration is where the pad or cup, or the surface of the pad or cup, is positioned at a predetermined distance above the surface, and wherein the second configuration is where the pad or cup, or the surface of the pad or cup, is closer to the surface than in the first configuration.

15. The device according to claim 14, in, In the second configuration, the pad or cup is flush or substantially flush with the surface.

16. Apparatus according to any one of the preceding claims, in, Each of the suction devices includes a compressible bellows configured to be compressed when the suction device grabs the wafer to draw the wafer closer to the surface.

17. The apparatus according to any one of claims 12 to 15, in: Each of the suction devices includes a compressible bellows configured to be compressed when the suction device grasps the wafer, thereby drawing the wafer closer to the surface; and Each of the suction devices includes a base, which is received in an opening in the surface, the base is connected to the pad or cup by the bellows, and gas is sucked from above the pad or cup through the pad or cup, the bellows and the base.

18. The apparatus according to any one of claims 12 to 15, in, Each of the suction devices includes a lift pin having the pad or cup.

19. The device according to claim 18, in, The apparatus includes one or more lift mechanisms for raising the lift pins relative to the surface.

20. The device according to claim 18 or 19, in, Each of the lift pins has a flow path along which gas can be drawn from above the pad or cup.

21. Apparatus according to any one of the preceding claims, in, The apparatus comprises a plate or block having the surface.

22. Apparatus according to any one of the preceding claims, in: The device is used to passively cool the wafer; or The apparatus is used to actively cool the wafer.

23. The apparatus of any preceding claim, further comprising a vacuum pump in fluid communication with the shared vacuum line.

24. A device, wherein include: The apparatus according to any one of claims 1 to 23; and a vacuum pump in fluid communication with the shared vacuum line of the apparatus.

25. A wafer quality metrology apparatus comprising an apparatus according to any one of the preceding claims.

26. The wafer quality measurement device according to claim 25, in, The apparatus comprises a measurement chamber, and the device is thermally coupled to the measurement chamber.

27. The wafer quality measurement device according to claim 26, in, The device is mounted on the measurement chamber.

28. The wafer quality measurement device according to any one of claims 25 to 27, wherein include: A measuring device is provided for measuring the weight and / or mass of the wafer within the measuring chamber.

29. A bellows assembly, include: Bellows; and a bellows insert received in an end portion of the bellows.

30. The bellows assembly according to claim 29, in, The body of the bellows insert has an outer shape that conforms to the inner shape of the end portion of the bellows.

31. The bellows assembly according to claim 29 or 30, in, The body of the bellows insert is substantially frusto-conical in outer shape.

32. A bellows assembly according to any one of claims 29 to 31, in, At the end of the bellows assembly, a surface of the bellows insert provides a contact surface for the bellows assembly.

33. The bellows assembly according to claim 32, in, The bellows insert includes a removable element located in the surface of the bellows insert.

34. The bellows assembly according to claim 33, in, The removable element comprises an O-ring received in a groove in the surface of the bellows insert.

35. A bellows assembly according to claim 33 or 34, in, The removable element comprises a fluorinated elastomer or a perfluorinated elastomer.

36. A bellows assembly according to any one of the preceding claims, wherein the bellows insert comprises a retaining portion for retaining the bellows insert in the bellows.

37. The bellows assembly according to claim 36, in: The bellows has an undulating or pleated shape, The retaining portion has a width greater than the narrow portion in the undulating or pleated shape, and When the bellows insert is received in the bellows, the retaining portion is positioned on an opposite side of the narrowed portion relative to the body.

38. The bellows assembly of any one of the preceding claims, wherein the bellows insert includes one or more passageways extending through the bellows insert that allow air to flow through the bellows insert into the bellows.

39. The apparatus according to claim 1, in, One or more of the suction devices comprises a bellows assembly according to any one of claims 29 to 38.

40. A bellows insert configured to be received in an end portion of a bellows.

41. The bellows insert of claim 39, in, The outer shape of the body of the bellows insert is substantially frusto-conical.

42. A bellows insert according to claim 40 or claim 41, in, When the bellows insert is received in the bellows, a surface of the bellows insert is configured to provide a contact surface at a distal end of the bellows.

43. The bellows insert of claim 42, in, The bellows insert includes a removable element in the surface of the bellows insert.

44. The bellows insert of claim 43, in, The removable element comprises an O-ring received in a groove in the surface of the bellows insert.

45. A bellows insert according to claim 43 or 44, in, The removable element comprises a fluorinated elastomer or a perfluorinated elastomer.

46. ​​A bellows insert according to any one of claims 40 to 45, in, The bellows insert includes a retaining portion for retaining the bellows insert in the bellows.

47. The bellows insert of claim 46, in: The retaining portion includes a portion having an increased width relative to an adjacent portion of the bellows insert.

48. A bellows insert according to any one of the preceding claims, in, The bellows insert includes one or more passageways extending through the bellows insert that allow air to flow through the bellows insert.

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