Temperature and process compensation circuit, variable gain amplifier circuit and temperature and process compensation method

Abstract

The invention discloses a temperature and process compensation circuit, a variable gain amplifier circuit and a temperature and process compensation method. The temperature and process compensation circuit comprises a temperature compensation circuit, a process tracking circuit and a scissor fork signal generator, the temperature compensation circuit comprises a first band gap current source, a second current source and a first resistor string; the first band-gap current source and the second current source generate reference voltage through the first resistor string; setting voltage VSET is connected to a positive input port of the shear fork signal generator, and reference voltage is connected to a negative input port of the shear fork signal generator; the process tracking circuit is used for providing compensation voltage for the scissor fork signal generator along with the change of a process angle; when the process angle is not changed and the temperature is changed, the output voltage of the compensation circuit is adjusted by adjusting the proportional relation between the band-gap current and the PTAT current in the second current source; when the temperature is not changed and the process corners are changed, the output voltage of the compensation circuit under different process corners is adjusted through the process tracking circuit.

Description

Technical Field

[0001] The present invention belongs to the technical field of electronic circuit design, and particularly relates to a temperature and process compensation circuit, a variable gain amplifier circuit, and a temperature and process compensation method. Background Art

[0002] With the development of wireless communication technology, radio frequency (RF) circuits are widely used in various devices, such as satellite communication, aerospace, military, automotive, Internet of Things (IoT), and consumer electronics. These devices often need to operate reliably under extreme environmental conditions, covering a wide temperature range from low temperature to high temperature. For example, in satellite communication and aerospace, devices are usually exposed to low-temperature space environments and high temperatures during atmospheric reentry. Under these conditions, RF circuits not only have to withstand temperature fluctuations but also ensure that their performance does not degrade during long-term use. In addition, applications such as automotive electronic systems and IoT sensors also require RF circuits to be able to adapt to extreme temperature changes while maintaining stable signal transmission. Due to the significant impact of temperature on the performance of RF circuits, such as parameters like gain, distortion, and noise figure, temperature compensation and stability optimization must be considered during design to ensure normal operation under various extreme temperatures.

[0003] At the same time, since RF circuits usually have high frequency requirements, any minor manufacturing differences (such as the conductivity of semiconductor materials, changes in component sizes, inconsistencies in process steps, etc.) will have a non-negligible impact on their performance. Therefore, process compensation needs to be considered in RF circuit design to minimize the impact of these process differences on circuit performance and ensure the stability, reliability, and efficiency of the circuit under different process conditions.

[0004] Traditional temperature compensation circuits usually use temperature compensation elements. For example, the characteristic that the forward voltage of a diode changes with temperature can be used to design a temperature compensation circuit to ensure the stability of the circuit when the temperature changes. Figure 1 It is a temperature compensation circuit formed by using the temperature characteristics of a diode. The principle is that when the temperature rises, the voltage drop across the diode decreases with the increase in temperature, and when the temperature drops, the voltage drop across the diode increases with the decrease in temperature. At this time, the temperature characteristics of the diode can be used to adjust the base current of the triode to keep it stable when the temperature changes. However, such an implementation method is too dependent on the temperature characteristics of the diode, and when the size of the diode in the circuit is determined, the temperature compensation performance of the circuit is also determined, with poor adjustability and not suitable for the temperature compensation of most circuits.

[0005] The existing compensation circuit also realizes temperature compensation by dividing the voltage of a thermistor and a common resistor. However, such an implementation method relies too much on the thermistor and poses high requirements for it. Moreover, the circuit designed by such temperature compensation elements cannot adjust the magnitude of temperature compensation after the size of the temperature-sensitive device is determined, which has great limitations in practical applications.

[0006] In addition, due to inevitable variations in semiconductor manufacturing processes, components in the same batch or even of the same type may exhibit different characteristics. Such variations can cause fluctuations in circuit parameters such as gain and voltage, thereby affecting the performance of the entire system. Therefore, the design goal of the process compensation circuit is to correct the variations caused by process deviations through specific feedback or adjustment mechanisms, ensuring that the circuit maintains a stable operating state under different process conditions and improving the consistency and reliability of the circuit.

[0007] The existing compensation circuit also realizes temperature and process compensation through a compensation current and a voltage-dividing circuit. However, such an implementation method introduces process deviations of field-effect transistors and voltage-dividing resistors for process compensation. In the actual application process, it has too high requirements for circuit design, the calculation process of process compensation is too complex, and the implementation cost is relatively high. Summary of the Invention

[0008] Object of the Invention: To solve the problem that the output signal of the compensation circuit has errors due to temperature and process differences, and to solve the problem that the temperature compensation circuit relies on temperature-sensitive elements, the present invention proposes a temperature and process compensation circuit, a variable gain amplifier circuit, and a temperature and process compensation method. On the one hand, it can adjust the output signal of the circuit when the temperature changes, and in the actual application process, the magnitude of temperature compensation can also be optimized through codewords. On the other hand, it can automatically adjust the output signal according to the change of the process corner, achieving the effect of process compensation and improving the reliability of the circuit.

[0009] Technical Solution: A temperature and process compensation circuit includes: a temperature compensation circuit, a process tracking circuit, and a cross-point signal generator;

[0010] The temperature compensation circuit includes a first bandgap current source, a second current source, and a first resistor string formed by connecting several resistors in series; the first bandgap current source and the second current source generate multiple reference voltages through the first resistor string;

[0011] The set voltage VSET is connected to the positive input port of the cross-point signal generator, the reference voltage generated by the temperature compensation circuit is connected to the negative input port of the cross-point signal generator, and the power supply voltage of the cross-point signal generator is connected to the process tracking circuit;

[0012] The process tracking circuit is used to follow the change of the process corner and provide a compensation voltage to the cross-point signal generator;

[0013] When the process corner remains unchanged while the temperature changes, the output voltage of the temperature and process compensation circuit is adjusted by adjusting the proportional relationship between the bandgap current and the PTAT current in the second current source.

[0014] When the temperature remains unchanged while the process corner changes, the output voltage of the temperature and process compensation circuit at different process corners is adjusted through the process tracking circuit.

[0015] Further, the process tracking circuit includes: a first amplifier module, a transmission gate Passgate module, a seventh resistor, a second resistor string formed by connecting several resistors in series, a first field-effect transistor, a second field-effect transistor, a third bandgap current source, a fourth bandgap current source, a second amplifier module, and a buffer; the common-mode input voltage VCMi is connected to the negative input port of the first amplifier module, the positive input port of the first amplifier module is connected to one port of the transmission gate Passgate module, and the other port of the transmission gate Passgate module is connected to each resistor of the second resistor string; one end of the seventh resistor is connected to the second resistor string, and the other end is connected to the output end of the fourth bandgap current source and the negative input end of the second amplifier module; one end of the third bandgap current source is connected to the power supply voltage AVCC, the positive input end of the second amplifier module is connected to the output end of the third bandgap current source and the drain of the first field-effect transistor, the output end of the second amplifier module is connected to the gate of the first field-effect transistor and the input end of the buffer, and the output voltage VLDO of the buffer is determined by the common-mode input voltage VCMi, the first resistor in the second resistor string, and the first field-effect transistor.

[0016] When the temperature remains unchanged while the process corner changes, the output voltage of the temperature and process compensation circuit at different process corners is adjusted by adjusting the size of the first field-effect transistor.

[0017] Further, it also includes a switch state control circuit, and the switch state control circuit is used to control the switch state of the transmission gate Passgate module. The switch state control circuit includes: a first inverter, a second inverter, and a digital module; the digital module is used to generate a control signal Fine_tune, the control signal Fine_tune is input to the first inverter to become a control signal SELN, and the control signal SELN is input to the second inverter to become a control signal SEL; the switch state of the transmission gate Passgate module is controlled by the control signals SEL and SELN.

[0018] The present invention discloses a variable gain amplifier circuit, including a temperature and process compensation circuit and a variable gain amplifier; the input of the variable gain amplifier is connected to the output of the temperature and process compensation circuit; the temperature and process compensation circuit is a temperature and process compensation circuit disclosed above;

[0019] The variable gain amplifier includes an attenuation module and an amplifier; the attenuation module includes: a first variable resistor, a second variable resistor, a third variable resistor, a fourth variable resistor, a twelfth resistor, a thirteenth resistor, a sixteenth resistor, a nineteenth resistor, a twentieth resistor, and a twenty-first resistor;

[0020] One end of the twelfth resistor is connected to the positive input signal Vip, the other end is connected to one end of the thirteenth resistor, the other end of the thirteenth resistor is connected to one end of the sixteenth resistor, and the other end of the sixteenth resistor is connected to the positive input terminal of the amplifier. Similarly, after the twentieth resistor, the twenty-first resistor, and the nineteenth resistor are connected to each other, they are connected to the negative input terminal of the amplifier;

[0021] One end of the first variable resistor is connected to the positive input signal Vip, and the other end is connected to the positive input terminal of the amplifier. One end of the second variable resistor is connected to the other end of the twelfth resistor, and the other end is connected to the positive input terminal of the amplifier; One end of the third variable resistor is connected to the negative input signal Vin of the circuit, and the other end is connected to the negative input terminal of the amplifier; One end of the fourth variable resistor is connected to the other end of the twentieth resistor, and the other end is connected to the negative input terminal of the amplifier;

[0022] Each variable resistor is implemented by a field effect transistor.

[0023] Further, each of the variable resistors is implemented by a field effect transistor, specifically including: a third field effect transistor and a fourth field effect transistor. The gate terminal of the third field effect transistor is connected to the negative output terminal of the scissor fork signal generator, the gate terminal of the fourth field effect transistor is connected to the positive output terminal of the scissor fork signal generator, the source terminal of the third field effect transistor is connected to the positive input terminal of the amplifier, and the drain terminals of the third field effect transistor and the fourth field effect transistor are connected to the positive input signal Vip.

[0024] Further, the variable gain amplifier can be replaced by a module circuit with the same function.

[0025] The present invention discloses a temperature and process compensation method, including the following steps:

[0026] Step 1: Build a compensation circuit; the compensation circuit is a temperature and process compensation circuit disclosed above;

[0027] Step 2: According to the requirements of the subsequent circuit, design the device type and size of the first field-effect transistor in the process tracking circuit to adjust the output voltage of the temperature and process compensation circuit under different process corners; by adjusting the proportional relationship between the bandgap current and the PTAT current in the second current source, compensate the reference voltage of the scissor signal generator to adjust the output voltage of the temperature and process compensation circuit at different temperatures.

[0028] Beneficial effects: Compared with the prior art, the present invention has the following advantages:

[0029] (1) The present invention discloses a temperature and process compensation circuit and method. On the one hand, it can adjust the output signal of the circuit when the temperature changes, and in the actual application process, the temperature compensation magnitude can also be optimized through codewords; on the other hand, it can automatically adjust the output signal according to the change of the process corner to achieve the effect of process compensation; this implementation solves the problem of errors in the circuit output signal due to temperature and process differences, and also avoids the problem that the temperature compensation circuit depends on temperature-sensitive components, improving the reliability of the circuit.

[0030] (2) The present invention realizes different output voltage signals at different temperatures by adjusting the proportional relationship between the bandgap current and the PTAT current in the second current source I2.

[0031] (3) The present invention automatically adjusts the output signal according to the change of the process corner through the process tracking circuit to achieve the effect of process compensation, and finally realizes different output voltage signals under different process corners. Description of the Drawings

[0032] Figure 1 It is a traditional temperature compensation circuit diagram;

[0033] Figure 2 It is a temperature and process compensation circuit proposed by the present invention;

[0034] Figure 3 It is a specific embodiment of applying the temperature and process compensation circuit proposed by the present invention to a variable gain amplifier;

[0035] Figure 4 It is a schematic diagram of adjusting the VSET voltage magnitude to realize the function of the scissor signal generator;

[0036] Figure 5 It is a schematic diagram of the aggregation phenomenon of the variable gain amplifier at high and low temperatures when VSET is at the intermediate value;

[0037] Figure 6A temperature compensation circuit proposed in this embodiment provides a fixed current to a variable gain amplifier. By different codewords, the ratio of the bandgap current and the PTAT current in the second current source I2 can be adjusted to compensate the reference voltage of the scissor signal generator and adjust the amplifier gain at high and low temperatures. Schematic diagram;

[0038] Figure 7 Schematic diagram showing that when VSET is at a lower value and a higher value, there is a discrete phenomenon in the variable gain amplifier at different process corners;

[0039] Figure 8 A process compensation circuit proposed in this embodiment provides an output voltage that changes with the process corner to the attenuation part of the variable gain amplifier. The process tracking circuit automatically adjusts the output signal according to the change of the process corner to ensure the consistency of the amplifier gain at different process corners. Schematic diagram. Detailed implementation manners

[0040] Now, the technical solution of the present invention will be further described in conjunction with the accompanying drawings and embodiments.

[0041] Embodiment 1:

[0042] As Figure 2 shown, this embodiment proposes a temperature and process compensation circuit, which mainly includes: a temperature compensation circuit, a process tracking circuit, a switch state control circuit, a scissor signal generator B1<1:0> and a scissor signal generator B2<1:0>.

[0043] Among them, the temperature compensation circuit includes a first bandgap current source I1, a second current source I2, and a first resistor string formed by connecting several resistors in series; the first bandgap current source I1 and the second current source I2 respectively generate reference voltages VREF<0> to VREF<3> through the resistor string. Specifically, the resistor string is composed of a first resistor R1 to a sixth resistor R6.

[0044] The voltage VSET is input to the positive input ports of the scissor signal generator B1<1:0> and the scissor signal generator B2<1:0>. The reference voltages VREF<0> to VREF<3> generated by the temperature compensation circuit are respectively connected to the negative input terminals in the scissor signal generator B1<1:0> and the scissor signal generator B2<1:0>. For each scissor signal generator, its power supply voltage is connected to the VLDO voltage.

[0045] The VLDO voltage is sourced from the process tracking circuit. The process tracking circuit proposed in this embodiment includes: an amplifier module OTApi, four transmission gate Passgate modules (i.e., Passgate<3:0>), a seventh resistor R7, a second resistor string formed by connecting several resistors in series, a first field-effect transistor M1, a second field-effect transistor M2, a second current source I3, a third bandgap current source I4, an amplifier module OTA, and a buffer Buffer. Among them, the second resistor string consists of an eighth resistor R8 to an eleventh resistor R11.

[0046] The common-mode input voltage VCMi in the process tracking circuit is connected to the negative input terminal of the amplifier module OTApi. The positive input terminal of the amplifier module OTApi is connected to one port of the four transmission gate Passgate modules (i.e., Passgate<3:0>). The other ends of the four transmission gate Passgate modules are respectively connected to the voltages VR<0> to VR<3> of the second resistor string. The voltage of one port of the eighth resistor R8 is clamped to the voltage VCMi, and the other port is connected to the source terminal of the first field-effect transistor M1 and one port of the ninth resistor R9. The current flowing through the eighth resistor R8 is I3 + I4. Therefore, the voltage of the other end of the eighth resistor R8 is VCMi+(I3 + I4)×R8. The other end of the seventh resistor R7 is connected to the output terminal of the fourth bandgap current source I4 and the negative input terminal of the amplifier module OTA. The current flowing through the seventh resistor R7 is I4. Therefore, the voltage of the other end of the seventh resistor R7 is VCMi+(I3 + I4)×R8+I4×R7. The other end of the third bandgap current source I3 is connected to the power supply voltage AVCC. The positive input terminal of the amplifier OTA is connected to the output terminal of the third bandgap current source I3 and the drain terminal of the first field-effect transistor M1. The voltage of the positive input terminal is VCMi+(I3 + I4)×R8+I4×R7. The output terminal of the amplifier OTA is connected to the gate terminal of the first field-effect transistor M1 and the input terminal of the buffer Buffer. The voltage of the output terminal is VCMi+(I3 + I4)×R8+Vgs_M1. Therefore, the output voltage VLDO of the buffer Buffer is determined by the common-mode input voltage VCMi, the eighth resistor R8, and the first field-effect transistor M1.

[0047] In addition, the switch states of the four Passgate modules are controlled by a switch state control circuit, which includes: a first inverter INV1, a second inverter INV2, and a digital module; the digital module is used to generate a control signal Fine_tune<3:0>, the control signal Fine_tune<3:0> is input to the first inverter INV1 and becomes a control signal SELN<3:0>, and the control signal SELN<3:0> is input to the second inverter INV2 and becomes a control signal SEL<3:0>; the switch states of the four Passgate modules are controlled by the control signals SEL<3:0> and SELN<3:0>. It can be seen from the switch state control circuit that the control signals SEL<3:0> and SELN<3:0> are controlled by the same control signal Fine_tune<3:0>.

[0048] Now, the above-mentioned temperature and process compensation circuit will be applied to a variable gain amplifier. As Figure 3 shown, the variable gain amplifier includes an attenuation module and an amplifier. The variable resistor in the attenuation module is implemented by field effect transistors, specifically including: a third field effect transistor M3<1:0> and a fourth field effect transistor M4<1:0>. The gate terminal of the third field effect transistor M3<1:0> is connected to the negative output terminal of the scissor signal generator, the gate terminal of the fourth field effect transistor M4<1:0> is connected to the positive output terminal of the scissor signal generator, the source terminal of the third field effect transistor M3 is connected to the positive input terminal of the amplifier, and the drain terminal is connected to the circuit positive input signal Vip.

[0049] The attenuation module includes: a first variable resistor R14, a second variable resistor R15, a third variable resistor R17, a fourth variable resistor R18, a twelfth resistor R12, a thirteenth resistor R13, a sixteenth resistor R16, a nineteenth resistor R19, a twentieth resistor R20, and a twenty-first resistor R21; one end of the twelfth resistor R12 is connected to the circuit positive input signal Vip, the other end is connected to one end of the thirteenth resistor R13, the other end of the thirteenth resistor R13 is connected to one end of the sixteenth resistor R16, and the other end of the sixteenth resistor R16 is connected to the positive input terminal of the amplifier. Similarly, the twentieth resistor R20, the twenty-first resistor R21, and the nineteenth resistor R19 are connected to each other and then connected to the negative input terminal of the amplifier. One end of the first variable resistor R14 is connected to the positive input signal Vip, and the other end is connected to the positive input terminal of the amplifier. One end of the second variable resistor R15 is connected to the other end of the twelfth resistor R12, and the other end is connected to the positive input terminal of the amplifier; one end of the third variable resistor R17 is connected to the circuit negative input signal Vin, and the other end is connected to the negative input terminal of the amplifier; one end of the fourth variable resistor R18 is connected to the other end of the twentieth resistor R20, and the other end is connected to the negative input terminal of the amplifier.

[0050] When the set voltage VSET is very small, if it is less than the reference voltages VREF<0> to VREF<3>, the voltage at the positive output terminal of each scissor signal generator module is relatively low and the voltage at the negative output terminal is relatively high at this time; as the set voltage gradually increases and is compared with the reference voltages VREF<0> to VREF<3>, the voltage at the positive output terminal of each scissor signal generator module will gradually increase and the voltage at the negative output terminal will gradually decrease. Therefore, as the set voltage increases, the voltage at the positive output terminal of the scissor signal generator gradually increases and the voltage at the negative output terminal gradually decreases. This process can be referred to Figure 4 .

[0051] When the process corner remains unchanged and the temperature changes, the current generated by the second current source I2 will change. At this time, the current of the first bandgap current source I1 remains unchanged, resulting in a difference in the currents of the two current sources. The smaller current will flow through the first resistor R1 to the intersection of the first bandgap current source I1 and the second current source I2. Therefore, the voltage difference across the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, and the sixth resistor R6 will change, and the voltage values of the reference voltages VREF<0> to VREF<3> will also change. When the VSET voltage value remains unchanged and the temperature increases, the current flowing through the first resistor R1 to the intersection becomes smaller. At this time, the voltage values of the reference voltages VREF<0> to VREF<3> increase, and the gain of the subsequent amplifier becomes larger than that at room temperature. Therefore, by adjusting the proportional relationship between the bandgap current and the PTAT (Proportional To Absolute Temperature) current in the second current source I2, the gain adjustment of the amplifier at high and low temperatures can be achieved. This process can be referred to Figure 5 and Figure 6 .

[0052] When the temperature remains unchanged and the process corner changes, the gate-source voltage Vgs_M1 of the first field-effect transistor M1 will change, and at this time, the output voltage VLDO of the process tracking circuit will also change accordingly. Since the temperature has not changed, the change in the output voltage of the positive and negative terminals of the scissor signal generator is only controlled by the VLDO voltage, and the gain of the subsequent amplifier will change accordingly. Therefore, by adjusting the size of the first field-effect transistor M1, the gain adjustment of the amplifier under different process corners can be achieved. This process can be referred to Figure 7 and Figure 8 .

[0053] Such as Figure 5As shown, if there is no temperature compensation module in the circuit, when the set voltage VSET is at the middle value, there is an aggregation phenomenon in the amplifier gain at high and low temperatures. The amplifier gains at high temperature (125°C) and low temperature (-55°C) are similar, that is, the reference voltages VREF<0> to VREF<3> are similar, and the currents on the first resistor string R2 to R6 are similar. At this time, the temperature and process compensation circuit disclosed in this embodiment provides a fixed current to the first resistor string. By different codewords, the ratio of the bandgap current and the PTAT current in the second current source I2 can be adjusted. When the given codeword makes the second current source I2 smaller at low temperature, the current passing through the first resistor string is smaller, thereby generating a smaller voltage difference, and the voltage values of the corresponding reference voltages VREF<0> to VREF<3> are smaller compared with room temperature; at high temperature, the second current source I2 is larger, the current passing through the first resistor string is larger, and the voltage values of the corresponding reference voltages VREF<0> to VREF<3> are larger compared with room temperature. Therefore, as Figure 6 shown, this current can achieve the characteristics of the amplifier gain decreasing at low temperature, remaining unchanged at room temperature, and increasing at high temperature, thereby changing the amplifier gain at high and low temperatures, which is convenient for the design of the subsequent circuit. At the same time, by modifying the codeword, the magnitude of the gain compensation at each temperature can also be adjusted to cope with more complex temperature compensation.

[0054] As Figure 7 shown, if there is no process tracking module in the circuit, when the set voltage VSET is small, there is a discrete phenomenon in the amplifier gain under different process corners. When the set voltage VSET is low, the adjustable resistance impedance of the attenuation module of the amplifier in the ff process corner is small, the attenuation rate is small, and the overall amplifier gain is large; the adjustable resistance impedance of the attenuation module in the ss process corner is large, the attenuation rate of the attenuation module is large, and the overall amplifier gain is small. At this time, the process tracking circuit disclosed in this embodiment provides a compensation voltage that changes with the process corner. The output voltage of the scissor signal generator is small in the ff process corner and large in the ss process corner, and by changing the device size of the first field-effect transistor M1, the difference between the VLDO voltage and the output voltage of the scissor signal generator under different process corners can be adjusted. When the given size makes the adjustable resistance of the attenuation module in the ff and ss process corners close to the resistance impedance in the tt process corner, the attenuation rate of the amplifier attenuation module remains consistent under different process corners, and the overall amplifier gain remains the same under different process corners. The compensation result is as Figure 8 shown.

[0055] Adopt a temperature and process compensation circuit proposed in this embodiment. By comparing the VSET voltage with the reference voltage, the output voltage is dynamically adjusted. At the same time, by adjusting the proportional relationship between the bandgap current and the PTAT current inside the second current source I2, different output voltages can be provided at different temperatures. By designing the size of the field-effect transistor in the process tracking circuit, different output voltages can be provided at different process corners, and finally, the compensation circuit can provide different output voltages at different temperatures and different process corners.

[0056] Embodiment 2:

[0057] This embodiment discloses a temperature and process compensation method, including the following steps:

[0058] Step 1: Build the temperature and process compensation circuit disclosed in Embodiment 1;

[0059] Step 2: Adjust the proportional relationship between the bandgap current and the PTAT current inside the second current source I2 through different codewords, compensate the reference voltage of the scissor signal generator, and adjust the amplifier gain at high and low temperatures to provide different output voltages at different temperatures;

[0060] Step 3: According to the requirements of the subsequent circuit, design the device type and size of the first field-effect transistor M1 in the process tracking circuit;

[0061] Step 4: Input the set voltage VSET, the reference current, the control signal SEL, and the control signal SELN into the temperature and process compensation circuit to control the voltage magnitude at the output end at different temperatures and process corners.

Claims

1. A temperature and process compensation circuit, characterized in that: include: Temperature compensation circuit, process tracking circuit and scissor fork signal generator; The temperature compensation circuit includes a first bandgap current source, a second current source and a first resistor string formed by connecting a plurality of resistors in series; The first bandgap current source and the second current source generate a plurality of reference voltages through a first resistor string; Connecting the setting voltage VSET to the positive input port of the scissors fork signal generator, connecting the reference voltage generated by the temperature compensation circuit to the negative input port of the scissors fork signal generator, and connecting the power supply voltage of the scissors fork signal generator to the process tracking circuit; The process tracking circuit is used to follow the change of the process angle and provide a compensation voltage to the scissor fork signal generator; When the process angle remains unchanged but the temperature changes, the output voltage of the temperature and process compensation circuit is adjusted by adjusting the proportional relationship between the bandgap current and the PTAT current in the second current source; When the temperature remains unchanged but the process angle changes, the temperature at different process angles and the output voltage of the process compensation circuit are adjusted through the process tracking circuit.

2. A temperature and process compensation circuit according to claim 1, characterized in that: The process tracking circuit comprises: a first amplifier module, a transmission gate Passgate module, a seventh resistor, a second resistor string formed by a plurality of resistors connected in series, a first field effect transistor, a second field effect transistor, a third bandgap current source, a fourth bandgap current source, a second amplifier module and a buffer; a common-mode input voltage VCMi is connected to a negative input port of the first amplifier module, a positive input port of the first amplifier module is connected to a port of the transmission gate Passgate module, and another port of the transmission gate Passgate module is connected to each resistor of the second resistor string; one end of the seventh resistor is connected to the second resistor string, and the other end thereof is connected to an output end of the fourth bandgap current source and a negative input end of the second amplifier module; one end of the third bandgap current source is connected to a power supply voltage AVCC, a positive input end of the second amplifier module is connected to an output end of the third bandgap current source and a drain end of the first field effect transistor, an output end of the second amplifier module is connected to a gate end of the first field effect transistor and an input end of the buffer, and an output voltage VLDO of the buffer is determined by the common-mode input voltage VCMi, the first resistor in the second resistor string and the first field effect transistor; When the temperature remains unchanged but the process angle changes, the temperature under different process angles and the output voltage of the process compensation circuit are adjusted by adjusting the size of the first field effect transistor.

3. A temperature and process compensation circuit according to claim 2, characterized in that: It also includes a switch state control circuit, which is used to control the switch state of the transmission gate Passgate module. The switch state control circuit includes: a first inverter, a second inverter and a digital module; the digital module is used to generate a control signal Fine_tune, the control signal Fine_tune is input to the first inverter and becomes a control signal SELN, the control signal SELN is input to the second inverter and becomes a control signal SEL; the switch state of the transmission gate Passgate module is controlled by the control signals SEL and SELN.

4. A variable gain amplifier circuit, characterized in that: It comprises a temperature and process compensation circuit and a variable gain amplifier; the input of the variable gain amplifier is connected to the output of the temperature and process compensation circuit; the temperature and process compensation circuit is a temperature and process compensation circuit as claimed in any one of claims 1 to 3; The variable gain amplifier comprises an attenuation module and an amplifier; The attenuation module includes: a first variable resistor, a second variable resistor, a third variable resistor, a fourth variable resistor, a twelfth resistor, a thirteenth resistor, a sixteenth resistor, a nineteenth resistor, a twentieth resistor and a twenty-first resistor; One end of the twelfth resistor is connected to the positive input signal Vip, and the other end is connected to one end of the thirteenth resistor, the other end of the thirteenth resistor is connected to one end of the sixteenth resistor, and the other end of the sixteenth resistor is connected to the positive input end of the amplifier. Similarly, the twentieth resistor, the twenty-first resistor and the nineteenth resistor are connected to each other and connected to the negative input end of the amplifier. One end of the first variable resistor is connected to the positive input signal Vip, and the other end thereof is connected to the positive input terminal of the amplifier; one end of the second variable resistor is connected to the other end of the twelfth resistor, and the other end thereof is connected to the positive input terminal of the amplifier; one end of the third variable resistor is connected to the circuit negative input signal Vin, and the other end thereof is connected to the negative input terminal of the amplifier; one end of the fourth variable resistor is connected to the other end of the twentieth resistor, and the other end thereof is connected to the negative input terminal of the amplifier; Each variable resistor is implemented by a field effect transistor.

5. A variable gain amplifier circuit according to claim 4, characterized in that: Each variable resistor is implemented by a field effect transistor, specifically including: a third field effect transistor and a fourth field effect transistor, the gate end of the third field effect transistor is connected to the negative output end of the scissors fork signal generator, the gate end of the fourth field effect transistor is connected to the positive output end of the scissors fork signal generator, the source end of the third field effect transistor is connected to the positive input end of the amplifier, and the drain ends of the third field effect transistor and the fourth field effect transistor are connected to the positive input signal Vip.

6. A variable gain amplifier circuit according to claim 4, characterized in that: The variable gain amplifier can be replaced by a module circuit with the same function.

7. A temperature and process compensation method, characterized in that: The following steps are involved: Step 1: construct a compensation circuit; the compensation circuit is a temperature and process compensation circuit as described in any one of claims 1 to 3; Step 2: According to the needs of the subsequent circuit, design the device type and size of the first field effect transistor in the process tracking circuit to adjust the output voltage of the temperature and process compensation circuit under different process angles; by adjusting the proportional relationship between the bandgap current and the PTAT current in the second current source, compensate the reference voltage of the scissors fork signal generator, and adjust the output voltage of the temperature and process compensation circuit under different temperatures.

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