Photoelectric element with reaction rate enhancing structure

Abstract

The invention provides a photoelectric element with a reaction rate enhancing structure, which comprises a part of reflective filter layer which has high penetration rate for light in a specific wavelength range and can reflect light with other wavelengths; the gain layer is used for acting with the photons to change the wavelength of the photons; and a photoelectric reaction layer. Wherein the gain layer is located between the partially reflective filter layer and the photoelectric reaction layer; when a photon acts on the gain layer, one or more photons with changed wavelengths can be generated, so that the photons enter the photoelectric reaction layer for photoelectric conversion, or are reflected by the partially reflective filter layer to enter the photoelectric reaction layer for photoelectric conversion. In another form, another part of the reflective filter layer is arranged between the gain layer and the photoelectric reaction layer.

Description

Technical Field

[0001] The present invention relates to an optoelectronic device with a structure for enhancing the reaction rate. Through a specific gain layer, the optoelectronic conversion efficiency of the optoelectronic device is greatly improved. Background Art

[0002] Optoelectronic devices include photodiodes, phototransistors, etc. Their working principle is that photons strike a certain material layer. When an electron in this material layer absorbs the energy of a photon and this energy is greater than or equal to the relevant energy threshold, this electron will escape from the material layer with sufficient energy and become a photoelectron; if the energy is insufficient, the electron will release energy, and the energy will ultimately be converted into waste heat.

[0003] Please refer to Figure 1 , which shows the basic structure of an optoelectronic device in the prior art, including a filter layer 101 and a photoelectric reaction layer 103. After light with a specific wavelength (as shown by the small arrow) in the light beam (as shown by the large arrow) passes through the filter layer 101, it strikes the photoelectric reaction layer 103. Some electrons in the photoelectric reaction layer 103 obtain sufficient energy and become photoelectrons (as shown by the circles in the figure), while the other electrons do not generate effective optoelectronic conversion due to insufficient energy, and become photons again, and are ultimately absorbed by the material and become useless waste heat.

[0004] As can be seen from the above, for a certain amount of incident light, the photoelectric effect can only achieve a certain percentage of optoelectronic conversion efficiency (also referred to as the reaction rate Responsivity in this specification), and this percentage is less than 100%.

[0005] Although research on the materials of the filter layer 101 and the photoelectric reaction layer 103 can slightly improve the above optoelectronic conversion efficiency, the optoelectronic conversion efficiency in the prior art is not satisfactory.

[0006] The present invention aims at the above problems and proposes a solution. Through a specific gain layer, the optoelectronic conversion efficiency of the optoelectronic device is greatly improved. Summary of the Invention

[0007] In one aspect, the present invention provides an optoelectronic device with a structure for enhancing the reaction rate, comprising: a partially reflective filter layer that has a high transmittance for light in a specific wavelength range and reflects light of other wavelengths; a gain layer for interacting with photons to change the wavelength of the photons; and a photoelectric reaction layer; wherein the gain layer is located between the partially reflective filter layer and the photoelectric reaction layer; wherein, when a photon interacts with the gain layer, one or more photons with changed wavelengths are generated, so as to enter the photoelectric reaction layer for optoelectronic conversion, or be reflected by the partially reflective filter layer and enter the photoelectric reaction layer for optoelectronic conversion.

[0008] In the above-mentioned optoelectronic element, the light in the specific wavelength range is, for example, light in the short wavelength range (for example, but not limited to, the wavelength range of 200-400 nm).

[0009] In one preferred embodiment, the partially reflective filter layer is a multi-layer composite film layer formed by combining different dielectric materials or by combining dielectric materials and metal materials.

[0010] In one preferred embodiment, the gain layer material includes one or more of the following: ZnS; ZnxCd(1-x)S; CdS; CdSe; CuInS2-CdS; Sr2SiO4 doped with Eu2+; Y3Al5O12 doped with Ce3+; Ca2SiS4 doped with rare earth ions; Ba2SiS4 doped with rare earth ions; Y3S2OF3 doped with rare earth ions; La2CaF4S doped with rare earth ions; or La2SrF4S doped with rare earth ions; wherein the doped rare earth ions include Mn2+, Ce3+ or Eu2+.

[0011] In one preferred embodiment, up-conversion nano particles are filled in the gain layer.

[0012] In another aspect, the present invention provides an optoelectronic element having a structure with enhanced reaction rate, comprising: a first partially reflective filter layer having a high transmittance for light in a specific wavelength range and reflecting light of other wavelengths; a gain layer for interacting with photons to change the wavelength of the photons; a second partially reflective filter layer reflecting the light in the specific wavelength range and having a high transmittance for light of other wavelengths; and an optoelectronic reaction layer; wherein the gain layer is located between the first partially reflective filter layer and the second partially reflective filter layer, and the second partially reflective filter layer is located between the gain layer and the optoelectronic reaction layer; wherein when a photon passes through the first partially reflective filter layer and enters the gain layer, it can interact with the gain layer to generate one or more photons with changed wavelengths, so as to enter the optoelectronic reaction layer for optoelectronic conversion. When a photon passes through the first partially reflective filter layer and enters the gain layer, it can be reflected by the second partially reflective filter layer and return to the gain layer to interact with the gain layer, generating one or more photons with changed wavelengths, so as to enter the optoelectronic reaction layer for optoelectronic conversion.

[0013] In the above-mentioned optoelectronic element, the light in the specific wavelength range is, for example, light in the long wavelength range (for example, but not limited to, light with a wavelength exceeding 1150 nm).

[0014] In the above-mentioned optoelectronic element, the light in the specific wavelength range is, for example, light in the short wavelength range (for example, but not limited to, the wavelength range of 200-400 nm).

[0015] In one preferred embodiment, the gain layer material comprises one or more of the following: Y2O3 nanoparticles or crystals doped with lanthanide ions; BaGdF5 nanoparticles or crystals doped with lanthanide ions; SrYbF5 nanoparticles or crystals doped with lanthanide ions; or glass materials doped with lanthanide ions; wherein the doped lanthanide ions comprise Er3+, Yb3+, or Tm3+.

[0016] The following is a detailed description through specific examples to more easily understand the purpose, technical content, features, and achieved effects of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Showing the basic structure of an optoelectronic device of the prior art.

[0018] Figure 2 Showing an embodiment of the optoelectronic device of the present invention.

[0019] Figure 3 Illustratively showing the material characteristics of a partially reflective filter layer according to the present invention.

[0020] Figure 4 Showing another embodiment of the optoelectronic device of the present invention.

[0021] Figure 5 Illustratively showing corresponding to Figure 4 the material characteristics of the partially reflective filter layer of the embodiment.

[0022] Figure 6 Showing another embodiment of the optoelectronic device of the present invention.

[0023] Figure 7A And Figure 7B Illustratively showing corresponding to Figure 6 the material characteristics of the partially reflective filter layer of the embodiment.

[0024] SYMBOLS USED IN THE DRAWINGS

[0025] 10, 20 Optoelectronic devices

[0026] 11 Partially reflective filter layer

[0027] 12 Gain layer

[0028] 13 Partially reflective filter layer

[0029] 14 Photoelectric reaction layer

[0030] 101 Filter layer

[0031] 103 Photoelectric reaction layer

[0032] A~I, a~f, A’, C’, F’, I’, a’, b’, e’: Photon paths Detailed implementation manners

[0033] The drawings in the present invention are all schematic, mainly intended to illustrate the spirit of the present invention and the mutual relationship of each structural part, and the shapes and dimensions are not drawn according to the ratio.

[0034] Figure 2 An embodiment of an optoelectronic element with a structure for enhancing the reaction rate of the present invention is shown. This optoelectronic element can be, for example, a photodiode, a phototransistor, etc. This embodiment can be applied, for example, to optoelectronic elements that need to react to light in a short wavelength range (such as, but not limited to, light in the wavelength range of 200~400nm).

[0035] Please refer to Figure 2 , as shown in the figure, the optoelectronic element 10 of the present invention includes a partially reflective filter layer 11, a gain layer 12, and a photoelectric reaction layer 14. The partially reflective filter layer 11 is made of a material that is penetrable to specific wavelengths and reflective to other wavelengths. For example, please refer to Figure 3 , the material illustrated in the figure has a high transmittance for light in the shown specific wavelength range, while light of other wavelengths will be reflected. The light in the specific wavelength range is, for example, but not limited to, light in a short wavelength range. In one embodiment, the light in the specific wavelength range is, for example, but not limited to, light in the wavelength range of 200~400nm. A multi-layer composite film layer formed by combining different dielectric materials or combining dielectric materials with metal materials can be used as the partially reflective filter layer 11 to achieve the above-mentioned effect of having a high transmittance for light in a specific wavelength range and reflecting light of other wavelengths; currently, various filter film layers such as IR-Cut, IR-Pass, and UV-Cut have such properties. For the wavelength to which the optoelectronic element 10 is to be applied, an appropriate multi-layer composite film layer can be designed accordingly to be used as the partially reflective filter layer 11. For example, if the optoelectronic element is to be applied to the aforementioned wavelength range of 200~400nm, the partially reflective filter layer 11 can be designed to have a high transmittance for this wavelength range, while light of other wavelengths will be reflected.

[0036] Return to Figure 2 , when a light beam (such as Figure 2When irradiated onto the partially reflective filter layer 11 (as indicated by the hollow arrow in the middle), photons within the above-specified wavelength range can penetrate the partially reflective filter layer 11 and enter the gain layer 12. Among them, some photons will reach and enter the optoelectronic reaction layer 14 after entering the gain layer 12, and undergo the photoelectric effect, as shown by A at the far right in the figure. The reaction rate of the optoelectronic reaction layer 14 during the photoelectric effect varies depending on the material of the optoelectronic reaction layer 14 and the wavelength of the light. For example, when the optoelectronic reaction layer 14 is made of silicon, it has a relatively good reaction rate for a wavelength range of approximately 500 - 800 nm, a lower reaction rate for a wavelength range below approximately 400 nm, and is completely unable to perform photoelectric conversion for a wavelength range exceeding approximately 1150 nm. Therefore, in the prior art, if an optoelectronic element is to be applied to sense a wavelength range below 400 nm or above 800 nm, other materials are used to fabricate the optoelectronic reaction layer 14 instead of silicon. However, silicon is very mature in the semiconductor manufacturing process and has greater advantages compared to other materials in terms of integration with integrated circuits. But in the prior art, if silicon is used, one has to accept the reality of a relatively low reaction rate.

[0037] Compared with the prior art, in the present invention, the above limitations can be overcome, and a reaction rate far higher than that of the prior art can be achieved. Please continue to refer to Figure 2 Among the photons that enter the gain layer 12 and reach the optoelectronic reaction layer 14, in addition to directly entering the optoelectronic reaction layer 14, some will be reflected by the interface between the gain layer 12 and the optoelectronic reaction layer 14 (as shown by A' in the figure) and return to the gain layer 12. In the gain layer 12, these photons will interact with the gain layer 12, undergo an incomplete photoelectric effect and cause an energy level change, resulting in one or more photons of different wavelengths (as shown by B in the figure). Among them, some photons that change to different wavelengths (for example, change to a wavelength range of 500 - 800 nm) and have a downward direction will enter the optoelectronic reaction layer 14 again and have a high chance of successfully undergoing photoelectric conversion (as shown by C' in the figure). Some other photons that change to different wavelengths and have an upward direction reach the interface between the gain layer 12 and the partially reflective filter layer 11. Since the partially reflective filter layer 11 only allows specific wavelengths to penetrate, these photons that change to different wavelengths cannot penetrate and will be reflected again (as shown by C in the figure) and reach and enter the optoelectronic reaction layer 14, and again have a high chance of successfully undergoing photoelectric conversion (as shown by D in the figure).

[0038] In addition, among the photons that initially enter the gain layer 12, some generate energy level changes due to an incomplete photoelectric effect with the gain layer 12 before reaching the photoelectric reaction layer 14, becoming one or more photons of different wavelengths (such as E in the figure); the photons that change to different wavelengths and have an upward direction are reflected by the partially reflective filter layer 11 (such as F in the figure) and reach and enter the photoelectric reaction layer 14 (such as G in the figure); those with a downward direction have a high chance of successfully undergoing photoelectric conversion after entering the photoelectric reaction layer 14 (such as F’ in the figure). Moreover, if photons that change to different wavelengths are reflected by the interface between the gain layer 12 and the photoelectric reaction layer 14, such photons will be reflected by the partially reflective filter layer 11 again and have another chance to enter the photoelectric reaction layer 14 for photoelectric conversion (such as H in the figure). From one perspective, in the present invention, the reflective filter layer 11, the gain layer 12, and the photoelectric reaction layer 14 constitute a Responsivity Amplifying Structure, thereby significantly improving the photoelectric conversion efficiency. If the amount of light with a specific incident wavelength (such as, but not limited to, a wavelength range of approximately 200 - 400 nm) is used as the base number, since one photon in the 200 - 400 nm wavelength range may generate multiple photons of different wavelengths to enter the photoelectric reaction layer 14, and these photons with changed wavelengths are more likely to successfully undergo photoelectric conversion, the responsivity achievable by the present invention can even exceed 100%.

[0039] According to the present invention, the gain layer 12 suitable for Figure 2 the embodiment can be made of, for example, but not limited to, the following materials: ZnS; ZnxCd(1 - x)S; CdS; CdSe; CuInS2 - CdS; Sr2SiO4 doped with Eu2+; Y3Al5O12 doped with Ce3+; ternary sulfides doped with rare earth ions, such as Ca2SiS4, Ba2SiS4; fluorosulfides doped with rare earth ions or oxyfluorosulfides doped with rare earth ions, such as Y3S2OF3, La2CaF4S, La2SrF4S; the rare earth ions doped are, for example, but not limited to, Mn2+, Ce3+ or Eu2+.

[0040] Please refer to Figure 4 , which is another embodiment of the present invention. The optoelectronic element 20 of this embodiment can be applicable to, for example, optoelectronic elements that need to react to long - wavelength light (such as, but not limited to, a wavelength range exceeding 1150 nm). The optoelectronic element 20 includes a partially reflective filter layer 11, a gain layer 12, a partially reflective filter layer 13, and a photoelectric reaction layer 14. In this embodiment, partially reflective filter layers (11 and 13) are provided above and below the gain layer 12. Among them, the design of the penetrability of the partially reflective filter layers 11 and 13 for specific wavelengths and the reflectivity for other wavelengths can be, for example, as Figure 5As shown. Specifically, please refer to Figure 5 , the partial reflective filter layer 11 has the characteristics illustrated in the upper part of the figure, allowing long-wavelength light (e.g., exceeding 1150 nm) to penetrate and reflecting lower-wavelength light (e.g., below 1150 nm); the partial reflective filter layer 13 has the characteristics illustrated in the lower part of the figure, reflecting long-wavelength light (e.g., exceeding 1150 nm) and allowing lower-wavelength light (e.g., below 1150 nm) to penetrate.

[0041] Returning to Figure 4 , when a light beam (as indicated by the hollow arrow in Figure 4 ) irradiates the partial reflective filter layer 11, photons within the above-mentioned long-wavelength range will penetrate the partial reflective filter layer 11 and enter the gain layer 12. Some of these photons will interact with the gain layer 12 after entering it, resulting in an incomplete photoelectric effect and an energy level change, thus becoming one or more photons of different wavelengths (such as a in the figure). Among them, some photons that change to different wavelengths (e.g., changing to a wavelength range of 400 - 900 nm) will travel downward, pass through the partial reflective filter layer 13 and enter the photoelectric reaction layer 14, and have a high chance of successfully undergoing photoelectric conversion (such as b' in the figure). Another part of the photons that change to different wavelengths will travel upward, reach the interface between the gain layer 12 and the partial reflective filter layer 11, and will be reflected again (such as b in the figure) and pass through the partial reflective filter layer 13 to enter the photoelectric reaction layer 14, and also have a high chance of successfully undergoing photoelectric conversion (such as c in the figure). Another part of the photons will directly reach the interface between the gain layer 12 and the partial reflective filter layer 13 (such as a' in the figure); since these photons are of long wavelength, they will be reflected by the partial reflective filter layer 13 and return to the gain layer 12, and there is a considerable probability that they will interact with the gain layer 12 and become one or more photons of different wavelengths (such as d in the figure), and the subsequent changes are similar to the foregoing, as shown by e', e, f in the figure. Of course, there may also be some photons that still escape in the form of long wavelength through the partial reflective filter layer 11, as shown by the dashed arrow in the figure.

[0042] In the prior art, it is almost completely impossible to use a photoelectric reaction layer 14 made of silicon material to sense light with a wavelength exceeding 1150 nm. In the present invention, the above limitation can be overcome, and sensing can still be carried out. Therefore, whether for short wavelengths or long wavelengths, the present invention can greatly improve the photoelectric conversion efficiency.

[0043] According to the present invention, applicable to Figure 4The gain layer 12 of the embodiment can be made of, for example but not limited to, the following materials: nanoparticles or crystals of Y2O3, BaGdF5, SrYbF5, etc. doped with lanthanide ions; glass materials doped with lanthanide ions; the doped lanthanide ions are, for example but not limited to, Er3+, Yb3+, Tm3+, etc.

[0044] Please refer to Figure 6 , which is another embodiment of the present invention. The optoelectronic element 30 of this embodiment can be applicable to optoelectronic elements that need to react to short-wavelength light (for example but not limited to light in the wavelength range of 200 to 400 nm). As shown in the figure, the optoelectronic element 30 of the present invention includes a partially reflective filter layer 11, a gain layer 12, a partially reflective filter layer 13, and an optoelectronic reaction layer 14. The partially reflective filter layer 11 is made of a material that is penetrable to a specific wavelength and reflective to other wavelengths. For example, please refer to Figure 7A , the material illustrated in the figure has a high transmittance for the light in the shown specific shorter wavelength range, while the light of other wavelengths will be reflected; please refer to Figure 7B , the material illustrated in the figure has a high transmittance for the light in the shown specific longer wavelength range, while the light of other wavelengths will be reflected. The light in the specific shorter wavelength range is, for example but not limited to, light in the short wavelength range. In one embodiment, the light in the specific shorter wavelength range is, for example but not limited to, light in the wavelength range of 200 to 400 nm. By combining different dielectric materials or combining dielectric materials with metal materials to form a multi-layer composite film layer as the partially reflective filter layer 11, the effect of having a high transmittance for the light in a specific wavelength range and reflecting the light of other wavelengths can be achieved; currently, various filter film layers such as IR-Cut, IR-Pass, UV-Cut, etc. all have such properties.

[0045] Regarding the wavelength to which the optoelectronic element 30 is to be applied, an appropriate multi-layer composite film layer can be designed accordingly to be used as the partially reflective filter layers 11 and 13. For example, if the optoelectronic element is to be applied to the aforementioned wavelength range of 200 to 400 nm, the partially reflective filter layer 11 can be designed to have a high transmittance for this wavelength range, while the light of other wavelengths will be reflected. Conversely, the partially reflective filter layer 13 can be designed to have a high transmittance for the wavelength range with a higher reaction rate of the optoelectronic reaction layer 14, while the light of other wavelengths will be reflected.

[0046] In this embodiment, partially reflective filter layers (11 and 13) are provided above and below the gain layer 12. Among them, the design of the penetrability of the partially reflective filter layers 11 and 13 for a specific wavelength range and the reflectivity for another specific wavelength range can be, for example, asFigure 6 As shown. Specifically, please refer to Figure 6 , the partial reflective filter layer 11 has Figure 7A the exemplified characteristics, allowing short-wavelength light (such as light in the wavelength range of 200 - 400 nm) to penetrate while reflecting higher-wavelength light (such as light with a wavelength higher than 400 nm); the partial reflective filter layer 13, on the other hand, has Figure 7B the exemplified characteristics, reflecting short-wavelength light (such as light in the wavelength range of 200 - 300 nm) but allowing higher-wavelength light (such as light with a wavelength higher than 300 nm) to penetrate.

[0047] Returning to Figure 6 , when a light beam (as Figure 6 indicated by the hollow arrow in

[0048] ) irradiates the partial reflective filter layer 11, photons within the above-specified wavelength range will penetrate the partial reflective filter layer 11 and enter the gain layer 12. A portion of these photons will reach and enter the photoelectric reaction layer 14 after entering the gain layer 12, and undergo the photoelectric effect, as shown by A on the far right in the figure. The reaction rate of the photoelectric reaction layer 14 for the photoelectric effect varies depending on the material and the wavelength of the light. Figure 6 , for the photons that enter the gain layer 12 and then pass through the partial reflective filter layer 13 to reach the photoelectric reaction layer 14, in addition to directly entering the photoelectric reaction layer 14, another portion will be reflected by the interface between the gain layer 12 and the partial reflective filter layer 13 (as shown by A' in the figure) and return to the gain layer 12. In the gain layer 12, these photons will interact with the gain layer 12, undergo an incomplete photoelectric effect and cause an energy level change, resulting in one or more photons of different wavelengths (as shown by B in the figure). Among them, a portion of the photons that change to different wavelengths (such as changing to the wavelength range of 500 - 800 nm) will have a downward direction and will enter the photoelectric reaction layer 14 again, and have a high chance of successfully undergoing photoelectric conversion (as shown by C' in the figure). Another portion of the photons that change to different wavelengths, with an upward direction, reach the interface between the gain layer 12 and the partial reflective filter layer 11, and since the partial reflective filter layer 11 only allows specific wavelengths to penetrate (such as shorter wavelengths), these photons that change to different wavelengths cannot penetrate and will be reflected again (as shown by C in the figure) and reach and enter the photoelectric reaction layer 14, and also have a high chance of successfully undergoing photoelectric conversion (as shown by D in the figure).

[0049] In addition, among the photons initially entering the gain layer 12, some photons interact with the gain layer 12 as described above before reaching the optoelectronic reaction layer 14, becoming one or more photons of different wavelengths (such as E in the figure); the photons that change to different wavelengths and have an upward direction are reflected by the partially reflective filter layer 11 (such as F in the figure) and then reach and enter the optoelectronic reaction layer 14 (such as G in the figure); the photons with a downward direction have a high chance of successfully undergoing optoelectronic conversion (such as F’ in the figure). Moreover, if photons that change to different wavelengths are reflected by the gain layer 12 and the partially reflective filter layer 13, such photons will be reflected by the partially reflective filter layer 11 again, and then interact with the gain layer 12 again, resulting in an incomplete optoelectronic effect and an energy level change, thus becoming one or more photons of different wavelengths (such as H in the figure). Among them, some photons that change to different wavelengths (for example, changing to a wavelength range of 500 - 800 nm) have a downward direction, will re-enter the optoelectronic reaction layer 14, and have a high chance of successfully undergoing optoelectronic conversion (such as I and I’ in the figure). From one perspective, in the present invention, the reflective filter layer 11, the gain layer 12, the partially reflective filter layer 13, and the optoelectronic reaction layer 14 constitute a Responsivity Amplifying Structure, thereby greatly improving the optoelectronic conversion efficiency. If the amount of light with a specific incident wavelength (such as but not limited to a wavelength range of approximately 200 - 400 nm) is used as the base number, since one photon in the 200 - 400 nm wavelength range may generate multiple photons of different wavelengths to enter the optoelectronic reaction layer 14, and these photons with changed wavelengths are more likely to successfully undergo optoelectronic conversion, the responsivity achievable by the present invention can even exceed 100%.

[0050] According to the present invention, the gain layer 12 applicable to Figure 6 the embodiment can be made of, for example but not limited to, the following materials: ZnS; ZnxCd(1 - x)S; CdS; CdSe; CuInS2 - CdS; Sr2SiO4 doped with Eu2+; Y3Al5O12 doped with Ce3+; ternary sulfides doped with rare earth ions, such as Ca2SiS4, Ba2SiS4; fluorosulfides doped with rare earth ions or oxyfluorosulfides doped with rare earth ions, such as Y3S2OF3, La2CaF4S, La2SrF4S; the rare earth ions doped are, for example but not limited to, Mn2+, Ce3+ or Eu2+.

[0051] It should be noted that in the above embodiments, the gain layer 12 is filled with, for example but not limited to, up-conversion nanoparticles. Up-conversion nanoparticles are well-known techniques to those skilled in the art and are common technical means within the scope of the technology of this case. Up-conversion nanoparticles are widely used in many optoelectronic applications, and their mechanisms have been fully studied and understood. Up-conversion nanoparticles have the ability to convert two low-energy photons into one high-energy photon. This technology can be applied to this application to improve the optoelectronic conversion efficiency. Therefore, the content of up-conversion nanoparticles will not be elaborated here.

[0052] It should be noted that according to the present invention, the transmission and reflection wavelength ranges of the first partial reflective filter layer are designed for the wavelength range of the light to be sensed, that is, light within a specific wavelength range. For example, if light within a short wavelength range is to be sensed, it is designed to allow short wavelength light to pass through and long wavelength light to be reflected. Once the photons enter the gain layer, the design of converting the photon wavelength is carried out for the photons, and short wavelength light is preferably converted into a wavelength suitable for the optoelectronic reaction layer to have better optoelectronic reaction efficiency. The transmission and reflection wavelength ranges of the second partial reflective filter layer are designed for the wavelength range in which the light in the optoelectronic reaction layer has better optoelectronic reaction efficiency, so as to allow the wavelength range with better optoelectronic reaction efficiency to pass through and reflect light in other wavelength ranges. In one embodiment, the second partial reflective filter layer reflects the light within the specific wavelength range, so that the light within the specific wavelength range can fully react with the gain layer to be converted into light of other wavelengths. Therefore, through the second filter layer, the light within the specific wavelength range is reflected back to the filter layer.

[0053] It should be noted that the transmission and reflection wavelength ranges of the first partial reflective filter layer are designed for the wavelength range of the light to be sensed, and the transmission and reflection wavelength ranges of the second partial reflective filter layer are designed for the wavelength range in which the optoelectronic reaction layer has better optoelectronic reaction efficiency; therefore, the transmission and reflection wavelength ranges of the first partial reflective filter layer can be independent of those of the second partial reflective filter layer.

[0054] The present invention has been described above with reference to the preferred embodiments. However, the above description is only for those skilled in the art to easily understand the content of the present invention and is not used to limit the maximum scope of the rights of the present invention. Under the same spirit of the present invention, those skilled in the art can think of various equivalent changes. For example, the exemplified wavelength ranges are not limited to those described in the embodiments and can be defined as other ranges; in addition, other layers, such as a light lens layer, etc., can be added outside the shown layers. The scope of the present invention should cover the above and all other equivalent changes.

Claims

1. A photoelectric element having a structure for enhancing the reaction rate, comprising: A portion of the reflective filter layer has high transmittance for light of a specific wavelength range, but reflects light of other wavelengths; a gain layer for interacting with photons to change the wavelength of the photons; and a photoelectric reaction layer; in, The gain layer is located between the partially reflective filter layer and the photoelectric reaction layer; When a photon interacts with the gain layer, one or more photons with changed wavelengths are generated, so that they enter the photoelectric reaction layer for photoelectric conversion, or are reflected by the partially reflective filter layer and enter the photoelectric reaction layer for photoelectric conversion.

2. The photoelectric element having a structure for enhancing the response rate according to claim 1, wherein: The light in the specific wavelength range is light in a short wavelength range.

3. The photoelectric element having a structure for enhancing the response rate according to claim 2, wherein: The light in the specific wavelength range is light in the wavelength range of 200 to 400 nm.

4. The photoelectric element with an enhanced response rate structure according to claim 1, wherein: The partially reflective filter layer is a multi-layer composite film layer formed by combining different dielectric materials, or combining dielectric materials and metal materials.

5. The photoelectric element with an enhanced response rate structure according to claim 1, wherein: The gain layer material comprises one or more of the following: ZnS; ZnxCd(1-x)S; CdS; CdSe; CuInS2-CdS; Sr2SiO4 doped with Eu2+; Y3Al5O12 doped with Ce3+; Ca2SiS4 doped with rare earth ions; Ba2SiS4 doped with rare earth ions; Y3S2OF3 doped with rare earth ions; La2CaF4S doped with rare earth ions; or La2SrF4S doped with rare earth ions; The doped rare earth ions include Mn2+, Ce3+ or Eu2+.

6. The photoelectric element having a structure for enhancing the reaction rate according to claim 1, wherein: The gain layer is filled with upconversion nanoparticles.

7. A photoelectric element having a structure for enhancing the reaction rate, comprising: a first partially reflective filter layer having high transmittance for light of a specific wavelength range and reflecting light of other wavelengths; A gain layer for interacting with photons to change their wavelengths; a second partially reflective filter layer that reflects light in the specific wavelength range and has high transmittance for light of other wavelengths; and a photoelectric reaction layer; in, The gain layer is located between the first partial reflective filter layer and the second partial reflective filter layer, and the second partial reflective filter layer is located between the gain layer and the photoelectric reaction layer; When a photon passes through the first partial reflective filter layer and enters the gain layer, it can react with the gain layer to generate one or more photons with changed wavelengths, so that it enters the photoelectric reaction layer for photoelectric conversion. When a photon passes through the first partial reflective filter layer and enters the gain layer, it can be reflected by the second partial reflective filter layer and return to the gain layer to react with the gain layer, generating one or more photons with changed wavelengths, so that it enters the photoelectric reaction layer for photoelectric conversion.

8. The photoelectric element with an enhanced response rate structure according to claim 7, wherein: The light in the specific wavelength range is light in a long wavelength range.

9. The photoelectric element having a structure for enhancing the response rate according to claim 8, wherein: The light in the specific wavelength range is light having a wavelength exceeding 1150 nm.

10. The photoelectric element with an enhanced response rate structure according to claim 7, wherein: The light in this specific wavelength range is short-wavelength light.

11. The photoelectric element having a structure with enhanced response rate according to claim 10, wherein: The light in the specific wavelength range is light in the wavelength range of 200 to 400 nm.

12. The photoelectric element with an enhanced response rate structure according to claim 7, wherein: The gain layer material comprises one or more of the following: ZnS; ZnxCd(1-x)S; CdS; CdSe; CuInS2-CdS; Sr2SiO4 doped with Eu2+; Y3Al5O12 doped with Ce3+; Ca2SiS4 doped with rare earth ions; Ba2SiS4 doped with rare earth ions; Y3S2OF3 doped with rare earth ions; La2CaF4S doped with rare earth ions; or La2SrF4S doped with rare earth ions; The doped rare earth ions include Mn2+, Ce3+ or Eu2+.

13. The photoelectric element with an enhanced response rate structure according to claim 7, wherein: The partially reflective filter layer is a multi-layer composite film layer formed by combining different dielectric materials, or combining dielectric materials and metal materials.

14. The photoelectric element with an enhanced response rate structure according to claim 7, wherein: The gain layer material comprises one or more of the following: Y2O3 nanoparticles or crystals doped with lanthanide ions; BaGdF5 nanoparticles or crystals doped with lanthanide ions; SrYbF5 nanoparticles or crystals doped with lanthanide ions; or glass materials doped with lanthanide ions; The doped lanthanide ions include Er3+, Yb3+, or Tm3+.

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