Airflow control for improved thickness uniformity

Abstract

Embodiments of the present disclosure generally relate to methods and apparatus for a chemical vapor deposition chamber. More specifically, embodiments described herein relate to an apparatus including a substrate processing chamber and a remote plasma source cleaning (RPSC) system coupled with the substrate processing chamber, where the RPSC system includes five or more remote plasma sources (RPSs) for supplying cleaning gas to different interior regions of the substrate processing chamber. In one example, five or more RPSs are coupled to a common gas line to simultaneously supply a cleaning gas to a substrate processing chamber. In another example, five or more RPSs are individually controlled to supply a cleaning gas to a substrate processing chamber.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a method of cleaning a chemical vapor deposition chamber by controlling separate remote plasma sources. Background Art

[0002] Plasma-enhanced chemical vapor deposition (PECVD) is commonly used to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, organic light-emitting diode (OLED) substrates, and liquid crystal display (LCD) substrates. These substrates can be quite large and are generally rectangular. PECVD is typically achieved by introducing precursor gases into a vacuum chamber having a substrate disposed on a substrate support. The precursor gases are delivered to the substrate through a gas distribution assembly in the chamber.

[0003] During chemical vapor deposition, deposition materials may form on components of the chamber, such as the gas distribution assembly and the inner sidewalls of the chamber. This deposition material can flake off during subsequent processing and generate contaminant particles that can damage or destroy the substrates in the chamber. Accordingly, the chamber is cleaned regularly.

[0004] Currently, methods of cleaning PECVD chambers are very inefficient. This inefficiency can lead to increased process downtime and waste of cleaning gases. Thus, there is a need in the art for improved cleaning equipment and methods. Summary of the Invention

[0005] In one or more embodiments, an apparatus includes a substrate processing chamber and a remote plasma source cleaning (RPSC) system coupled to the substrate processing chamber, wherein the RPSC system includes five or more remote plasma sources (RPSs) for supplying cleaning gas to different internal regions of the substrate processing chamber. In one example, the five or more RPSs are coupled to a common gas line to simultaneously supply cleaning gas to the substrate processing chamber. In another example, the five or more RPSs are individually controlled to supply cleaning gas to the substrate processing chamber.

[0006] In one or more embodiments, an apparatus includes a substrate processing chamber and a remote plasma source cleaning (RPSC) system coupled to the substrate processing chamber, wherein the RPSC system includes a plurality of remote plasma sources (RPSs) that are individually controlled to supply cleaning gas to different internal regions of the substrate processing chamber.

[0007] In one or more embodiments, a method includes processing a substrate disposed in a substrate processing chamber and coupling a remote plasma source cleaning (RPSC) system to the substrate processing chamber, where the RPSC system includes five or more remote plasma sources (RPSs) for supplying a cleaning gas to different internal regions of the substrate processing chamber after processing the substrate. In one example, the five or more RPSs are coupled to a common gas line to simultaneously supply the cleaning gas to the substrate processing chamber. In another example, the five or more RPSs are individually controlled to supply the cleaning gas to the substrate processing chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] To understand the manner in which the above-recited features of the present disclosure can be obtained, a more particular description of the disclosure briefly summarized above may be had by reference to the embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0009] Figure 1 is a device showing a cross-sectional view of a substrate processing chamber according to one or more embodiments, the substrate processing chamber having a remote plasma source cleaning (RPSC) system coupled thereto.

[0010] Figures 2A to 2E is a schematic layout of an RPSC system attached to a chemical vapor deposition chamber according to one or more embodiments.

[0011] Figure 3 is a process flow diagram of a method for uniformly depositing a cleaning gas in a substrate processing chamber according to one or more embodiments.

[0012] Figure 4 is a process flow diagram of a method for simultaneously controlling five remote plasma sources (RPSs) to uniformly deposit a cleaning gas in a substrate processing chamber according to one or more embodiments.

[0013] Figure 5 is a process flow diagram of a method for individually controlling five RPSs to uniformly deposit a cleaning gas in a substrate processing chamber according to one or more embodiments.

[0014] Figures 6A to 6B is a schematic layout of an RPSC system attached to a chemical vapor deposition chamber according to one or more embodiments.

[0015] Figure 7 is a device showing a cross-sectional view of a substrate processing chamber according to one or more embodiments, the substrate processing chamber having an RPSC system coupled thereto, the system having three RPSs and five gas lines.

[0016] Figures 8A to 8C is attached to a chemical vapor deposition chamber according to one or more embodiments Figure 7 of the RPSC system.

[0017] For ease of understanding, the same reference numerals are used throughout the figures to label the same components that are common. It is contemplated that the elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

[0018] Many of the details, dimensions, angles, and other features shown in the figures are illustrative of particular implementations. Accordingly, other implementations may have other details, components, dimensions, angles, and features without departing from the spirit or scope of the present disclosure. Additionally, further implementations of the present disclosure may be practiced without several of the details described below. DETAILED DESCRIPTION

[0019] The present disclosure relates to a remote plasma source cleaning (RPSC) system for cleaning a substrate processing chamber for semiconductor manufacturing. In particular, the present disclosure relates to a system for improving the cleaning of a chemical vapor deposition (CVD) chamber, such as a plasma enhanced CVD (PECVD) chamber. It has been found that cleaning using the disclosed techniques improves the removal of undesired deposits within or on chamber components. For example, the techniques described herein provide a uniform application of cleaning gas, thus achieving more effective cleaning within the CVD chamber. More effective cleaning of the CVD chamber by using multiple remote plasma sources (RPSs) results in reduced duration of cleaning operations, frequency of cleaning cycles, process control drift, equipment / component damage, and product waste, while improving operator safety, increasing product throughput, enhancing process efficiency, and reducing total cost of ownership. The multiple RPSs advantageously apply a cleaning gas of uniform thickness within an interior region of the CVD chamber. In one example, the multiple RPSs include five or more RPSs. The five or more RPSs may be individually controlled. The five or more RPSs are supplied with cleaning gas via five gas lines. In another example, the multiple RPSs include three RPSs and five gas lines. In such an example, the various gas lines are coupled to a single RPS. In one instance, two gas lines are coupled to the same or a common RPS.

[0020] The present disclosure contemplates that terms such as "couples", "coupling", "couple", and "coupled" may include, but are not limited to, adhesion, embedding, welding, fusing, melting together, interference fit, and / or fastening, such as by using bolts, threaded connections, pins, and / or screws. The present disclosure contemplates that terms such as "couples", "couples to", "couple", and "coupled" may include, but are not limited to, integrally molding. The present disclosure contemplates that terms such as "couple", "coupling", "couple", and "coupled" may include, but are not limited to, direct coupling and / or indirect coupling, such as indirect coupling through components such as links, blocks, and / or frames.

[0021] Figure 1 is a device showing a cross-sectional view of a substrate processing chamber 100 having a remote plasma source cleaning (RPSC) system 200A coupled thereto.

[0022] The substrate processing chamber 100 can be, for example, a plasma processing chamber. In one example, the substrate processing chamber 100 is a plasma processing chamber used as part of a plasma enhanced chemical vapor deposition (PECVD) system. The substrate processing chamber 100 is operable to perform a deposition process for an encapsulation layer by a PECVD process. It should be noted that Figure 1 the substrate processing chamber 100 in is just one exemplary device that can be used to form electronic devices on a substrate. A chamber suitable for the PECVD process can be obtained from Applied Materials, Inc. located in Santa Clara, California, USA. It is contemplated that other deposition chambers, including deposition chambers from other manufacturers, can be used for aspects of the present disclosure.

[0023] The substrate processing chamber 100 includes one or more sidewalls 102 and a bottom 104, and the sidewalls 102 and the bottom 104 define a chamber body of the substrate processing chamber 100. A lid assembly 130 is used to define a processing space of the internal space of the substrate processing chamber 100. The lid assembly 130 includes a backplate 106 and a gas distribution plate or diffuser 110. The diffuser 110 includes gas openings 124 formed therethrough for introducing gas into the processing space.

[0024] The diffuser 110 is coupled to the backplate 106, and a gas chamber 117 is defined between the backplate 106 and the diffuser 110. The gas chamber 117 further defines a gap between the backplate 106 and the diffuser 110.

[0025] The backplane 106 includes a plurality of gas openings 101A to 101E formed therethrough ( Figure 1 five are shown in). Each of the plurality of gas openings 101A to 101E is in fluid connection with one of the plurality of conduits 116A to 116E.

[0026] The RPSC system 200A is coupled to the plurality of conduits 116A to 116E to supply gas to the substrate processing chamber 100. Specifically, the RPSC system 200A is in fluid connection with the first gas opening 101A through the first conduit 116A to supply process gas to the gas chamber 117. Similarly, the second gas opening 101B is in fluid connection through the second conduit 116B to supply process gas to the gas chamber 117. The third gas opening 101C is in fluid connection through the third conduit 116C to supply process gas to the gas chamber 117. The fourth gas opening 101D is in fluid connection through the fourth conduit 116D to supply process gas to the gas chamber 117. The fifth gas opening 101E is in fluid connection through the fifth conduit 116E to supply process gas to the gas chamber 117.

[0027] A plurality of remote plasma sources (RPSs), such as inductively coupled RPSs, are coupled to the plurality of conduits 116A to 116E. In one example, there are five RPSs. The first RPS 180 (RPS1) is coupled to the first conduit 116A via the first gas line 190. The second RPS 182 (RPS2) is coupled to the second conduit 116B via the second gas line 192. The third RPS 184 (RPS3) is coupled to the third conduit 116C via the third gas line 194. The fourth RPS 186 (RPS4) is coupled to the fourth conduit 116D via the fourth gas line 196. The fifth RPS 188 (RPS5-C) is coupled to the fifth conduit 116E via the fifth gas line 198. The first RPS 180, the second RPS 182, the third RPS 184, the fourth RPS 186, and the fifth RPS 188 may be collectively referred to as the plurality of RPSs 180, 182, 184, 186, 188. In other examples, more than five RPSs may be used.

[0028] Gas is supplied to the gas chamber 117 and flows into the processing space via the gas opening 124 of the diffuser 110. A radio frequency (RF) power source 122 is coupled to the backplate 106 and / or the diffuser 110 to provide RF power to the diffuser 110. The RF power source 122 is used to generate an electric field between the diffuser 110 and the substrate support 120 (which may be referred to as the substrate support 120). The electric field facilitates the formation of a plasma from the gas present between the diffuser 110 and the substrate support 120 within the processing space. Various RF frequencies can be used, such as frequencies between about 0.3 MHz and about 200 MHz. In one example, the RF power source 122 supplies power to the diffuser 110 at a frequency of 13.56 MHz.

[0029] The backplate 106 and components coupled thereto, such as the diffuser 110 and the plurality of conduits 116A to 116E, can define a lid assembly 130. The lid assembly 130 can also include portions positioned on or attached to it, such as the RF power source 122 and the plurality of remote plasma sources (RPS). The lid assembly 130 can be detachably coupled to the chamber body.

[0030] Still referring Figure 1 to the substrate processing chamber 100, the substrate 134 can be transferred into and out of the processing space through a slit valve opening (not shown). As Figure 1 shown, the substrate 134 is in a lowered position where it can be transferred into and out of the substrate processing chamber 100. The substrate 134 can be raised to a processing position (not shown) for processing. When the substrate support 120 is lifted to the processing position, the spacing between the top surface of the substrate 134 disposed on the substrate receiving surface and the diffuser 110 can be between about 400 mils and about 1,200 mils. In one embodiment, the spacing can be between about 400 mils and about 800 mils.

[0031] As used herein, the term "substrate" refers to a layer of material that serves as a basis for subsequent processing operations and includes the surface to be cleaned. The substrate can be a silicon-based material or can be any suitable insulating or conductive material as required. The substrate can include materials such as crystalline silicon (e.g., Si<100> or Si<111>), silicon oxide, strained silicon, silicon germanium, doped or undoped polysilicon, doped or undoped silicon wafers and patterned or non-patterned wafers, silicon-on-insulator (SOI), carbon-doped silicon oxide, silicon nitride, doped silicon, germanium, gallium arsenide, glass, or sapphire.

[0032] The substrate support 120 includes a support surface for supporting the substrate 134 thereon, wherein the rod 142 is coupled to a lift system 140 for raising and lowering the substrate support 120. The substrate support 120 can also include heating and / or cooling elements to maintain the substrate support 120 and the substrate 134 positioned thereon at a desired temperature.

[0033] The amount of open area between the substrate support 120 and the sidewall of the substrate processing chamber 100 controls the amount of gas transferred by the substrate support 120 and the substrate 134 positioned thereon. Thus, by preferentially making one area closer to the substrate support 120 have more open area than another area, the amount of gas flowing through one area of the substrate support 120 and the substrate 134 relative to another area can be controlled. For example, the open area near the center or central region of the substrate support 120 can be different from the open area near the corner region of the substrate support 120, thus preferentially guiding more flow through the area with more open area. Preferentially guiding more flow to one area can be used to compensate for other conduction asymmetries to produce a more uniform flow across the substrate, or to cause more gas to flow over one area of the substrate relative to another area. In one example, flow can be preferentially guided to the central region of the substrate support 120 relative to the corner region.

[0034] In another example, flow can be preferentially guided to the corner region of the substrate support 120 relative to the central region. In another example, flow can be preferentially guided to one side of the substrate support 120 relative to the other side of the substrate support 120. The open area on one side of the substrate support 120 can be selected by choosing the geometry of the cross-section of the substrate support 120 to control the width of the gap between the cross-section of the substrate support 120 and the sidewall of the substrate processing chamber 100, such as the curvature of the perimeter of the substrate support 120.

[0035] A vacuum pump 150 is coupled to the substrate processing chamber 100 for controlling the pressure within the processing space.

[0036] During cleaning of the substrate processing chamber 100, cleaning gas 107 from a cleaning gas source (e.g., gas panel 160) of the RPSC system 200A can be provided to the plurality of remote plasma sources 180, 182, 184, 186, 188. In one example, the cleaning gas 107 includes fluoride materials such as nitrogen trifluoride (NF 3 )), fluoride (F 2 )), and / or sulfur hexafluoride (SF 6 ). Other cleaning gases can be anticipated by those skilled in the art.

[0037] When excited, a remote plasma is formed from which dissociated clean gas species are generated. The plasma of the clean gas 107 is supplied to the processing space through a plurality of ducts 116A to 116E and through gas openings 124 formed in the diffuser 110 to clean components of the substrate processing chamber 100, such as the inner surface 103 of the sidewall 102. The clean gas can be further excited by the provided radio frequency power source 122 to flow through the diffuser 110, thereby reducing the recombination of the dissociated clean gas species.

[0038] As Figure 1 shown, the clean gas 107 flows from a plurality of remote plasma sources 180, 182, 184, 186, 188 to a plurality of ducts 116A to 116E. The clean gas 107 flows from the plurality of ducts 116A to 116E, through a plurality of gas openings 101A - 101C in the backplane 106, and into the gas chamber 117. The clean gas 107 flows from the gas chamber 117, through the gas opening 124, and into the processing space. The clean gas 107 cleans components of the substrate processing chamber 100, such as the inner surface 103 of the sidewall 102 and / or the support surface of the substrate support 120.

[0039] The clean gas 107 flows from the lower space and is exhausted from the substrate processing chamber 100. The clean gas 107 is exhausted from the lower space using a vacuum pump 150 through an exhaust port 152 formed in the bottom 104.

[0040] The substrate processing chamber 100 is coupled to the RPSC system 200A. The clean gas is supplied to the common valve VA 3 . The common valve VA 3 can be a single piece of equipment allocated to a plurality of RPSs 180, 182, 184, 186, 188, or the common valve VA 3 can be a series of valves and pipes for distributing the clean gas. The RPS can also be referred to as an RPS reactor.

[0041] As Figure 1 shown, a single pipe 166 can lead to five RPSs 180, 182, 184, 186, 188. The single pipe 166 leads to a connection point 165 that distributes the gas to the five RPSs 180, 182, 184, 186, 188. In one embodiment, the common valve VA 3 distributes the clean gas evenly to the five RPSs 180, 182, 184, 186, 188.

[0042] In one example, the purge gas from a single conduit 166 is supplied to a first RPS conduit 170, a second RPS conduit 172, a third RPS conduit 174, a fourth RPS conduit 176, and a fifth RPS conduit 178. The first RPS conduit 170 supplies purge gas to a first RPS 180, the second RPS conduit 172 supplies purge gas to a second RPS 182, the third RPS conduit 174 supplies purge gas to a third RPS 184, the fourth RPS conduit 176 supplies purge gas to a fourth RPS 186, and the fifth RPS conduit 178 supplies purge gas to a fifth RPS 188. The first RPS conduit 170 includes valve VA 4 , the second RPS conduit 172 includes valve VA 5 , the third RPS conduit 174 includes valve VA 6 , the fourth RPS conduit 176 includes valve VA 7 , and the fifth RPS conduit 178 includes valve VA 8 . Thus, each RPS conduit has a valve. In one embodiment, valves VA 4 , VA 5 , VA 6 , VA 7 , and VA 8 can be adjusted to supply different amounts of purge gas to one or more of the plurality of RPSs 180, 182, 184, 186, 188.

[0043] The RPSC system 200A further includes a first bypass gas line 162 having a valve VA 1 and a second bypass gas line 164 having a valve VA 2 . The first bypass gas line 162 and the second bypass gas line 164 may also be referred to as process gas lines. In Figure 1 , the first bypass gas line 162 originates from the gas panel 160 and extends to the single conduit 166 before the connection point 165. The second bypass gas line 164 originates from one end of the common conduit 167 (e.g., adjacent to the fifth RPS conduit 178), and extends to the fifth gas line 198, and the fifth gas line 198 is disposed after the fifth RPS 188.

[0044] The second bypass gas line 164 can bypass all five RPSs 180, 182, 184, 186, 188. For example, the transition between the process gas and the purge gas can be achieved by adjusting valve VA 2 . When valve VA 2 is opened, the process gas flows from the gas panel 160 to the interior region of the substrate processing chamber 100. When valve VA 2When closed, the purge gas flows from the gas panel 160 through the plurality of RPSs 180, 182, 184, 186, 188 to the interior region of the substrate processing chamber 100. Thus, a single bypass valve (i.e., the second bypass gas line 164) can close all five RPSs 180, 182, 184, 186, 188 simultaneously.

[0045] In one embodiment, the plurality of RPSs 180, 182, 184, 186, 188 have no other differences except for their positions or placements in the PECVD system. For example, in one embodiment, each of the plurality of RPSs 180, 182, 184, 186, 188 receives a purge gas at an equal flow rate. During the cleaning operation, each of the plurality of RPSs 180, 182, 184, 186, 188 can perform the same or different amounts of time. Each of the plurality of RPSs 180, 182, 184, 186, 188 can have an open valve on the pipe leading to the inlet.

[0046] In operation, between processing substrates, a purge gas can be supplied to the plurality of RPSs 180, 182, 184, 186, 188 such that a remote plasma is generated and supplied into the processing space to clean the chamber components. When in the processing space, the purge gas can be further excited by the power applied from the radio frequency power source 122 to the diffuser 110. Suitable purge gases include but are not limited to NF 3 , F 2 and SF 6 . The purge gas can be used alone or in combination with an inert gas. Inert gases that can be used include but are not limited to argon (Ar) and nitrogen (N).

[0047] Figures 2A to 2E is a schematic layout of an RPSC system attached to a chemical vapor deposition (CVD) chamber according to one or more embodiments.

[0048] A substrate processing chamber, such as a PECVD processing chamber, can be used to deposit a thin film on a substrate to form an electronic device. The substrate processing chamber is cleaned to remove materials accumulated due to processing operations. During cleaning, a purge gas is introduced into the substrate processing chamber. The flow of the purge gas throughout the processing chamber is non-uniform, resulting in the purge gas concentrating in certain regions of the processing chamber. The non-uniform flow of the purge gas and the resulting concentration in certain regions require a longer cleaning time to effectively clean the entire substrate processing chamber. The non-uniform flow of the purge gas also increases the amount of purge gas required to effectively clean the substrate processing chamber, resulting in an increase in the consumption of the purge gas. Longer cleaning times and increased consumption of the purge gas can lead to operational delays, increased cleaning costs, and a decrease in the throughput and yield of the substrate processing chamber. Refer to Figures 2A to 6BThe exemplary apparatus and method using five RPSs facilitate a faster cleaning rate, reduced consumption of cleaning gas, improved cost efficiency, and increased throughput.

[0049] Referring Figure 2A , the RPSC system 200A includes a first bypass gas line 162 having a valve VA 1 and a second bypass gas line 164 having a valve VA 2 . The first bypass gas line 162 and the second bypass gas line 164 may also be referred to as process gas lines. The first bypass gas line 162 originates from the gas panel 160 and extends to a single pipe 166 before the connection point 165. The second bypass gas line 164 originates from one end of a common pipe 167 (e.g., adjacent to the fifth RPS pipe 178) and extends to the fifth gas line 198, which is disposed after the fifth RPS 188.

[0050] Cleaning gas 107 ( Figure 1 ) from a cleaning gas source, such as the gas panel 160 of the RPSC system 200A, can be supplied to a plurality of remote plasma sources 180, 182, 184, 186, 188. The first gas line 190 of the first RPS 180 is coupled to the substrate processing chamber 100, the second gas line 192 of the second RPS 182 is coupled to the substrate processing chamber 100, the third gas line 194 of the third RPS 184 is coupled to the substrate processing chamber 100, the fourth gas line 196 of the fourth RPS 186 is coupled to the substrate processing chamber 100, and the fifth gas line 198 of the fifth RPS 188 is coupled to the substrate processing chamber 100.

[0051] The cleaning gas is supplied to a common valve VA 3 . The common valve VA 3 can be a single piece of equipment allocated to a plurality of RPSs 180, 182, 184, 186, 188, or the common valve VA 3 can be a series of valves and pipes for distributing the cleaning gas.

[0052] As Figure 2AAs shown, a single pipe 166 can be connected to a common pipe 167 at a connection point 165. Five pipes can extend from the common pipe 167. The five pipes are a first RPS pipe 170, a second RPS pipe 172, a third RPS pipe 174, a fourth RPS pipe 176, and a fifth RPS pipe 178. The first RPS pipe 170 supplies cleaning gas to a first RPS 180, the second RPS pipe 172 supplies cleaning gas to a second RPS 182, the third RPS pipe 174 supplies cleaning gas to a third RPS 184, the fourth RPS pipe 176 supplies cleaning gas to a fourth RPS 186, and the fifth RPS pipe 178 supplies cleaning gas to a fifth RPS 188. The first RPS pipe 170 includes a valve VA 4 and the second RPS pipe 172 includes a valve VA 5 and the third RPS pipe 174 includes a valve VA 6 and the fourth RPS pipe 176 includes a valve VA 7 and the fifth RPS pipe 178 includes a valve VA 8 . Thus, each RPS pipe has a valve.

[0053] In one embodiment, the valves VA 4 , VA 5 , VA 6 , VA 7 and VA 8 can be adjusted to supply equal amounts of cleaning gas to multiple RPSs 180, 182, 184, 186, 188. The first gas line 190 of the first RPS 180 can supply cleaning gas to a first region of the substrate processing chamber 100. The first region can be, for example, the upper left corner region of the substrate processing chamber 100. The second gas line 192 of the second RPS 182 can supply cleaning gas to a second region of the substrate processing chamber 100. The second region can be, for example, the lower left corner region of the substrate processing chamber 100. The third gas line 194 of the third RPS 184 can supply cleaning gas to a third region of the substrate processing chamber 100. The third region can be, for example, the upper right corner region of the substrate processing chamber 100. The fourth gas line 196 of the fourth RPS 186 can supply cleaning gas to a fourth region of the substrate processing chamber 100. The fourth region can be, for example, the lower right corner region of the substrate processing chamber 100. The fifth gas line 198 of the fifth RPS 188 can supply cleaning gas to a fifth region of the substrate processing chamber 100. The fifth region can be, for example, the central region of the substrate processing chamber 100. Thus, the first gas line 190, the second gas line 192, the third gas line 194, the fourth gas line 196, and the fifth gas line 198 can supply cleaning gas to different regions or zones within the substrate processing chamber 100.

[0054] In one embodiment, each of the plurality of RPSs 180, 182, 184, 186, 188 receives a cleaning gas flow rate that is equal. During the cleaning operation, each of the plurality of remote plasma sources 180, 182, 184, 186, 188 may be operated for the same or different amounts of time.

[0055] Referring to Figure 2B , the RPSC system 200B includes a single conduit 204 having a valve VA 10 that is coupled to a common conduit 207. The common conduit 207 feeds four of the five RPSs. The single conduit 204 may be connected to the common conduit 207 at a connection point 205. As opposed to 10 , in Figure 2A , four conduits may extend from the common conduit 207. The four conduits are a first RPS conduit 210, a second RPS conduit 212, a third RPS conduit 214, and a fourth RPS conduit 216. The first RPS conduit 210 supplies cleaning gas to the first RPS 180, the second RPS conduit 212 supplies cleaning gas to the second RPS 182, the third RPS conduit 214 supplies cleaning gas to the third RPS 184, and the fourth RPS conduit 216 supplies cleaning gas to the fourth RPS 186. Each of the first, second, third, and fourth RPS conduits 210, 212, 214, 216 has a valve. Figure 2B

[0056] The fifth RPS conduit 220 is not connected to the common conduit 207. The fifth RPS conduit 220 is separate from the other RPS conduits. The fifth RPS conduit 220 supplies gas to the fifth RPS 188. The fifth RPS conduit 220 also has a valve. The fifth RPS conduit 220 has a bypass gas line 222 coupled thereto. The bypass gas line 222 has a valve VA 11 that is the process gas line. The bypass gas line 222 may bypass the fifth RPS 188. For example, the transition between the process gas and the cleaning gas may be achieved by adjusting the valve VA 2 . When the valve VA 2 is open, the process gas flows from the gas panel 160 through the fifth RPS 188 to the interior region of the substrate processing chamber 100. When the valve VA 2 is closed, the cleaning gas flows from the gas panel 160 through the four RPSs 180, 182, 184, 186 to the interior region of the substrate processing chamber 100. Thus, the bypass gas line 222 can shut off at least one RPS without supplying cleaning gas to the substrate processing chamber 100. Thus, four RPSs 180, 182, 184, 186 may be used to supply cleaning gas to the substrate processing chamber 100.

[0057] ​The RPSC system 200B also includes a first bypass gas line 162 having a valve VA 1 The first bypass gas line 162 may also be referred to as a process gas line. The first bypass gas line 162 originates from the gas panel 160 and extends to the conduit 202. The conduit 202 supplies clean gas to the fifth RPS 188.

[0058] In one embodiment, the valves of the first, second, third, and fourth RPS conduits 210, 212, 214, 216 can be adjusted to supply equal amounts of clean gas to the four RPSs 180, 182, 184, 186. The fifth RPS conduit 220 can be adjusted to supply the same or different amounts of clean gas relative to the four RPSs 180, 182, 184, 186. Thus, the fifth RPS 188 can be individually or separately controlled relative to the four RPSs 180, 182, 184, 186.

[0059] The first gas line 190 of the first RPS 180 can supply clean gas to a first region of the substrate processing chamber 100. The first region can be, for example, the upper left corner region of the substrate processing chamber 100. The second gas line 192 of the second RPS 182 can supply clean gas to a second region of the substrate processing chamber 100. The second region can be, for example, the lower left corner region of the substrate processing chamber 100. The third gas line 194 of the third RPS 184 can supply clean gas to a third region of the substrate processing chamber 100. The third region can be, for example, the upper right corner region of the substrate processing chamber 100. The fourth gas line 196 of the fourth RPS 186 can supply clean gas to a fourth region of the substrate processing chamber 100. The fourth region can be, for example, the lower right corner region of the substrate processing chamber 100. The fifth gas line 198 of the fifth RPS 188 can supply clean gas to a fifth region of the substrate processing chamber 100. The fifth region can be, for example, the central region of the substrate processing chamber 100. Thus, the first gas line 190, the second gas line 192, the third gas line 194, the fourth gas line 196, and the fifth gas line 198 can supply clean gas to different regions or zones within the substrate processing chamber 100.

[0060] Thus, the clean gas flow to the central region of the substrate processing chamber 100 is individually controlled relative to the corner regions of the substrate processing chamber 100, while the corner regions of the substrate processing chamber 100 are each jointly or uniformly controlled by the four RPSs 180, 182, 184, 186. The clean gas flow to the four corners of the substrate processing chamber 100 can be supplied via a common valve VA 10 and, in one example, the common valve VA 10 can provide an equal flow rate to each corner of the substrate processing chamber 100.

[0061] Reference Figure 2C As shown in Figure 2C , the RPSC system 200C includes a gas panel 160 that individually supplies cleaning gas to each of a plurality of RPSs 180’, 182’, 184’, 186’, 188’. Compared with Figure 2A and Figure 2B , there is no common pipeline. Instead, the first RPS pipeline 230 extends to the first RPS 180’ (RPS1-W). The second RPS pipeline 232 extends from the first RPS pipeline 230 to the second RPS 182’ (RPS2-W). Thus, the first RPS 180’ and the second RPS 182’ can be jointly controlled as a subset of one or more RPSs. The first RPS pipeline 230 has a valve to simultaneously control the first RPS 180’ and the second RPS 182’. However, after the connection point 231, the first RPS 180’ can have a valve VA 14 , and the second RPS 182’ can have a valve VA 15 . The first RPS 180’, the second RPS 182’, the third RPS 184’, the fourth RPS 186’ and the fifth RPS 188’ can be collectively referred to as the plurality of RPSs 180’, 182’, 184’, 186’, 188’.

[0062] The third RPS pipeline 238 extends to the third RPS 184’ (RPS3-C). The third RPS 184’ can also have its own valve.

[0063] The fourth RPS pipeline 234 extends to the fourth RPS 186’ (RPS4-S). The fifth RPS pipeline 236 extends from the fourth RPS pipeline 234 to the fifth RPS 188’ (RPS5-S). Thus, the fourth RPS 186’ and the fifth RPS 188’ can be jointly controlled as a subset of one or more RPSs. The fourth RPS pipeline 234 has a valve to simultaneously control the fourth RPS 186’ and the fifth RPS 188’. However, after the connection point 235, the fourth RPS 186’ can have a valve VA 16 , and the fifth RPS 188’ can have a valve VA 17 .

[0064] In addition, the RPSC system 200C includes a first bypass gas pipeline 225 having a valve VA 12 and a second bypass gas pipeline 227 having a valve VA 13 . The first bypass gas pipeline 225 and the second bypass gas pipeline 227 can also be referred to as process gas pipelines. The first bypass gas pipeline 225 originates from the gas panel 160 and extends to a first point P on the third RPS pipeline 238 1The second bypass gas line 227 originates from a second point P on the third RPS line 238 2 and extends to the third gas line 194.

[0065] The first gas line 190 of the first RPS 180' is coupled to the substrate processing chamber 100, the second gas line 192 of the second RPS 182' is coupled to the substrate processing chamber 100, the third gas line 194 of the third RPS 184' is coupled to the substrate processing chamber 100, the fourth gas line 196 of the fourth RPS 186' is coupled to the substrate processing chamber 100, and the fifth gas line 198 of the fifth RPS 188' is coupled to the substrate processing chamber 100.

[0066] The first gas line 190 of the first RPS 180' can supply a cleaning gas to a first region of the substrate processing chamber 100. The first region can be, for example, the upper left corner region of the substrate processing chamber 100. The second gas line 192 of the second RPS 182' can supply a cleaning gas to a second region of the substrate processing chamber 100. The second region can be, for example, the lower left corner region of the substrate processing chamber 100. The third gas line 194 of the third RPS 184' can supply a cleaning gas to a third region of the substrate processing chamber 100. The third region can be, for example, the upper right corner region of the substrate processing chamber 100. The fourth gas line 196 of the fourth RPS 186' can supply a cleaning gas to a fourth region of the substrate processing chamber 100. The fourth region can be, for example, the lower right corner region of the substrate processing chamber 100. The fifth gas line 198 of the fifth RPS 188' can supply a cleaning gas to a fifth region of the substrate processing chamber 100. The fifth region can be, for example, the central region of the substrate processing chamber 100. Thus, the first gas line 190, the second gas line 192, the third gas line 194, the fourth gas line 196, and the fifth gas line 198 can supply a cleaning gas to different regions or zones within the substrate processing chamber 100.

[0067] In one example, the first RPS 180' and the second RPS 182' can be used to supply a cleaning gas to two corners of the substrate processing chamber 100 simultaneously. The first RPS 180' and the second RPS 182' can be controlled as a group to supply gas to, for example, the upper left corner and the lower left corner of the substrate processing chamber 100 at the same time. Similarly, the fourth RPS 186' and the fifth RPS 188' can be used to supply a cleaning gas to two corners of the substrate processing chamber 100 simultaneously. The fourth RPS 186' and the fifth RPS 188' can be controlled as a group to supply gas to, for example, the upper right corner and the lower right corner of the substrate processing chamber 100 at the same time. The third RPS 184' can be controlled separately to supply a cleaning gas to the central region or zone of the substrate processing chamber 100. Thus, relative to the corner regions of the substrate processing chamber 100, the central region of the substrate processing chamber 100 is controlled separately, while these corner regions are each jointly or uniformly controlled by different subsets or groups of RPSs.

[0068] In another example, valves can be adjusted to supply a cleaning gas to each of the plurality of RPSs 180', 182', 184', 186', 188' separately. For example, valve VA 14 and VA 15 can be adjusted such that the first RPS 180' and the second RPS 182' are independently controlled to supply different amounts of the cleaning gas to different internal regions or zones of the substrate processing chamber 100. Similarly, valves VA 16 and VA 17 can be adjusted such that the fourth RPS 186' and the fifth RPS 188' are independently controlled to supply different amounts of the cleaning gas to different internal regions or zones of the substrate processing chamber 100.

[0069] Referring to Figure 2D , the RPSC system 200D includes a gas panel 160 that supplies a cleaning gas to each of the plurality of RPSs 180', 182', 184', 186', 188' separately. Compared with Figure 2A and Figure 2B , there is no common pipeline. Instead, the first RPS pipeline 240 extends to the first RPS 180' (RPS1-W). The second RPS pipeline 242 extends from the first RPS pipeline 240 to the second RPS 182' (RPS2-W). Thus, the first RPS 180' and the second RPS 182' can be jointly controlled as a group or a subset of a plurality of RPSs. The first RPS pipeline 240 has a valve to control the first RPS 180' and the second RPS 182' simultaneously. However, after the connection point 241, the first RPS 180' can have a valve VA 20 , and the second RPS 182' can have a valve VA21 。

[0070] The third RPS pipe 254 extends to the third RPS 184’ (RPS3-C). The third RPS 184’ may also have its own valve.

[0071] The fourth RPS pipe 250 extends to the fourth RPS 186’ (RPS4-S). The fifth RPS pipe 252 extends from the fourth RPS pipe 250 to the fifth RPS 188’ (RPS5-S). Thus, the fourth RPS 186’ and the fifth RPS 188’ can be jointly controlled as a subset of one or more RPSs. The fourth RPS pipe 250 has a valve to simultaneously control the fourth RPS 186’ and the fifth RPS 188’. However, after the connection point 251, the fourth RPS 186’ can have a valve VA 22 , and the fifth RPS 188’ can have a valve VA 23 。

[0072] In addition, the RPSC system 200D includes a first bypass gas pipeline 260, a second bypass gas pipeline 262, a third bypass gas pipeline 264, and a fourth bypass gas pipeline 266. The first bypass gas pipeline 260, the second bypass gas pipeline 262, the third bypass gas pipeline 264, and the fourth bypass gas pipeline 266 can also be referred to as process gas pipelines. The first bypass gas pipeline 260 originates from the gas panel 160 and extends to the first point P on the fourth RPS pipe 250 3 。The second bypass gas pipeline 262 originates from the gas panel 160 and extends to the fourth point P on the third RPS pipe 254 4 。The third bypass gas pipeline 264 originates from the fifth point P on the third RPS pipe 254 5 , and extends to the sixth point P on the third gas pipeline 194 6 。The fourth bypass gas pipeline 266 originates from the gas panel 160 and extends to the seventh point P on the first RPS pipe 240 7 。

[0073] In another embodiment, additional bypass gas lines may be provided to bypass all of the RPSs among the plurality of RPSs 180’, 182’, 184’, 186’, 188’. For example, an RPS1 bypass gas line 270 may be provided to bypass the first RPS 180’. An RPS2 bypass gas line 272 may be provided to bypass the second RPS 182’. An RPS4 bypass gas line 274 may be provided to bypass the fourth RPS 186’. An RPS5 bypass gas line 276 may be provided to bypass the fourth RPS 188’. The RPS1 bypass gas line 270 extends from the first RPS pipe 240 to the first gas line 190. The RPS2 bypass gas line 272 extends from the second RPS pipe 242 to the second gas line 192. The RPS4 bypass gas line 274 extends from the fourth RPS pipe 250 to the fourth gas line 196. The RPS5 bypass gas line 276 extends from the fifth RPS pipe 252 to the fifth gas line 198.

[0074] The RPS1 bypass gas line 270 controls whether the first RPS 180' supplies clean gas via the first gas line 190. When the valve of the RPS1 bypass gas line 270 is open, the clean gas bypasses the first RPS 180'. When the valve of the RPS1 bypass gas line 270 is closed, the clean gas passes through the first RPS 190' and enters the first gas line 190, being supplied to the substrate processing chamber 100. Similarly, the RPS2 bypass gas line 272 controls whether the second RPS 182' supplies clean gas via the second gas line 192. When the valve of the RPS2 bypass gas line 272 is open, the clean gas bypasses the second RPS 182'. When the valve of the RPS2 bypass gas line 272 is closed, the clean gas passes through the second RPS 192' and enters the second gas line 192, being supplied to the substrate processing chamber 100. Thus, multiple RPSs 180', 182', 184', 186', 188' can be controlled individually. In one example, the user can decide to use all of the multiple RPSs 180', 182', 184', 186', 188' individually. In another example, the user can decide to use two of the multiple RPSs 180', 182', 184', 186', 188' (e.g., the first RPS 180' and the second RPS 182' or the fourth RPS 186' and the fifth RPS 188'). In another example, the user can decide to use four of the multiple RPSs 180', 182', 184', 186', 188' (e.g., the first, second, third, and fourth RPSs 180', 182', 184', 186'). Thus, different groupings or subsets of the multiple RPSs 180', 182', 184', 186', 188' can be used. Thus, the user can individually enable or disable any one of the multiple RPSs 180', 182', 184', 186', 188'.

[0075] The first gas line 190 of the first RPS 180' is coupled to the substrate processing chamber 100, the second gas line 192 of the second RPS 182' is coupled to the substrate processing chamber 100, the third gas line 194 of the third RPS 184' is coupled to the substrate processing chamber 100, the fourth gas line 196 of the fourth RPS 186' is coupled to the substrate processing chamber 100, and the fifth gas line 198 of the fifth RPS 188' is coupled to the substrate processing chamber 100.

[0076] The first gas line 190 of the first RPS 180' can supply a cleaning gas to the first region of the substrate processing chamber 100. The first region can be, for example, the upper left corner region of the substrate processing chamber 100. The second gas line 192 of the second RPS 182' can supply a cleaning gas to the second region of the substrate processing chamber 100. The second region can be, for example, the lower left corner region of the substrate processing chamber 100. The third gas line 194 of the third RPS 184' can supply a cleaning gas to the third region of the substrate processing chamber 100. The third region can be, for example, the upper right corner region of the substrate processing chamber 100. The fourth gas line 196 of the fourth RPS 186' can supply a cleaning gas to the fourth region of the substrate processing chamber 100. The fourth region can be, for example, the lower right corner region of the substrate processing chamber 100. The fifth gas line 198 of the fifth RPS 188' can supply a cleaning gas to the fifth region of the substrate processing chamber 100. The fifth region can be, for example, the central region of the substrate processing chamber 100. Thus, the first gas line 190, the second gas line 192, the third gas line 194, the fourth gas line 196, and the fifth gas line 198 can supply a cleaning gas to different regions or zones within the substrate processing chamber 100.

[0077] In one example, the first RPS 180' and the second RPS 182' can be used to simultaneously supply a cleaning gas to two corners of the substrate processing chamber 100. The first RPS 180' and the second RPS 182' can be controlled as a group to simultaneously supply gas to, for example, the upper left corner and the lower left corner of the substrate processing chamber 100. Similarly, the fourth RPS 186' and the fifth RPS 188' can be used to simultaneously supply a cleaning gas to two corners of the substrate processing chamber 100. The fourth RPS 186' and the fifth RPS 188' can be controlled as a group to simultaneously supply gas to, for example, the upper right corner and the lower right corner of the substrate processing chamber 100. The third RPS' can be controlled individually to supply a cleaning gas to the central region or zone of the substrate processing chamber 100. Thus, relative to the corner regions of the substrate processing chamber 100, the central region of the substrate processing chamber 100 is controlled individually, while these corner regions are each controlled jointly or uniformly by different subsets of RPSs.

[0078] In another example, valves can be adjusted to supply a cleaning gas individually to each of the plurality of RPSs 180', 182', 184', 186', 188'. For example, valves VA 20 and VA 21 can be adjusted such that the first RPS 180' and the second RPS 182' are independently controlled to supply different amounts of the cleaning gas to different internal regions or zones of the substrate processing chamber 100. Similarly, valves VA 22 and VA23 It can be adjusted such that the fourth RPS 186’ and the fifth RPS 188’ are independently controlled to supply different amounts of cleaning gas to different internal regions or zones of the substrate processing chamber 100.

[0079] Referring to Figure 2E , the RPSC system 200E includes a gas panel 160 that supplies cleaning gas individually to each of a plurality of RPSs 180’, 182’, 184’, 186’, 188’. A first RPS pipe 240 extends to the first RPS 180’ (RPS1-W). A second RPS pipe 242 extends from the first RPS pipe 240 to the second RPS 182’ (RPS2-W). Thus, the first RPS 180’ and the second RPS 182’ can be jointly controlled as a group or a subset of a plurality of RPSs. The first RPS pipe 240 has a valve to simultaneously control the first RPS 180’ and the second RPS 182’. However, after the connection point 241, the first RPS 180’ can have a valve VA 20 , and the second RPS 182’ can have a valve VA 21 .

[0080] A third RPS pipe 254 extends to the third RPS 184’ (RPS3-C). The third RPS 184’ can also have its own valve.

[0081] A fourth RPS pipe 250 extends to the fourth RPS 186’ (RPS4-S). A fifth RPS pipe 252 extends from the fourth RPS pipe 250 to the fifth RPS 188’ (RPS5-S). Thus, the fourth RPS 186’ and the fifth RPS 188’ can be jointly controlled as a group or a subset of a plurality of RPSs. The fourth RPS pipe 250 has a valve to simultaneously control the fourth RPS 186’ and the fifth RPS 188’. However, after the connection point 251, the fourth RPS 186’ can have a valve VA 22 , and the fifth RPS 188’ can have a valve VA 23 .

[0082] In addition, the RPSC system 200E includes a first bypass gas line 260, a second bypass gas line 262, a third bypass gas line 264, and a fourth bypass gas line 280. The first bypass gas line 260, the second bypass gas line 262, the third bypass gas line 264, and the fourth bypass gas line 280 can also be referred to as process gas lines. The first bypass gas line 260 originates from the gas panel 160 and extends to a first point P on the fourth RPS pipe 250 3 . The second bypass gas pipe 262 originates from the gas panel 160 and extends to a fourth point P on the third RPS pipe 2544 The third bypass gas line 264 originates from the fifth point P on the third RPS line 254 5 and extends to the sixth point P on the third gas line 194 6 The fourth bypass gas line 280 extends from the first RPS line 240 to the fourth RPS line 250. The first bypass gas line 260 can be coupled to the fourth bypass gas line 280 at point P 10 point.

[0083] In another embodiment, additional bypass gas lines can be provided to bypass all of the RPSs 180’, 182’, 184’, 186’, 188’ in the plurality of RPSs. For example, an RPS1 bypass gas line 270 can be provided to bypass the first RPS 180’. An RPS2 bypass gas line 272 can be provided to bypass the second RPS 182’. An RPS4 bypass gas line 274 can be provided to bypass the fourth RPS 186’. An RPS5 bypass gas line 276 can be provided to bypass the fourth RPS 188’. The RPS1 bypass gas line 270 extends from the first RPS line 240 to the first gas line 190. The RPS2 bypass gas line 272 extends from the second RPS line 242 to the second gas line 192. The RPS4 bypass gas line 274 extends from the fourth RPS line 250 to the fourth gas line 196. The RPS5 bypass gas line 276 extends from the fifth RPS line 252 to the fifth gas line 198.

[0084] The first gas line 190 of the first RPS 180’ can supply a cleaning gas to the first region of the substrate processing chamber 100. The first region can be, for example, the upper left corner region of the substrate processing chamber 100. The second gas line 192 of the second RPS 182’ can supply a cleaning gas to the second region of the substrate processing chamber 100. The second region can be, for example, the lower left corner region of the substrate processing chamber 100. The third gas line 194 of the third RPS 184’ can supply a cleaning gas to the third region of the substrate processing chamber 100. The third region can be, for example, the upper right corner region of the substrate processing chamber 100. The fourth gas line 196 of the fourth RPS 186’ can supply a cleaning gas to the fourth region of the substrate processing chamber 100. The fourth region can be, for example, the lower right corner region of the substrate processing chamber 100. The fifth gas line 198 of the fifth RPS 188’ can supply a cleaning gas to the fifth region of the substrate processing chamber 100. The fifth region can be, for example, the central region of the substrate processing chamber 100. Thus, the first gas line 190, the second gas line 192, the third gas line 194, the fourth gas line 196, and the fifth gas line 198 can supply a cleaning gas to different regions or zones within the substrate processing chamber 100.

[0085] In one example, the first RPS 180’ and the second RPS 182’ can be used to simultaneously supply a cleaning gas to two corners of the substrate processing chamber 100. The first RPS 180’ and the second RPS 182’ can be controlled as a group to simultaneously supply gas to, for example, the upper left corner and the lower left corner of the substrate processing chamber 100. Similarly, the fourth RPS 186’ and the fifth RPS 188’ can be used to simultaneously supply a cleaning gas to two corners of the substrate processing chamber 100. The fourth RPS 186’ and the fifth RPS 188’ can be controlled as a group to simultaneously supply gas to, for example, the upper right corner and the lower right corner of the substrate processing chamber 100. The third RPS’ can be individually controlled to supply a cleaning gas to the central region or zone of the substrate processing chamber 100. Thus, relative to the corner regions of the substrate processing chamber 100, the central region of the substrate processing chamber 100 is individually controlled, while these corner regions are each jointly or uniformly controlled by different subsets of RPSs.

[0086] In another example, valves can be adjusted to supply a cleaning gas individually to each of the plurality of RPSs 180’, 182’, 184’, 186’, 188’. For example, valves VA 20 and VA 21 can be adjusted such that the first RPS 180’ and the second RPS 182’ are independently controlled to supply different amounts of the cleaning gas to different internal regions or zones of the substrate processing chamber 100. Similarly, valves VA 22 and VA 23 can be adjusted such that the fourth RPS 186’ and the fifth RPS 188’ are independently controlled to supply different amounts of the cleaning gas to different internal regions or zones of the substrate processing chamber 100.

[0087] Furthermore, the fourth bypass gas line 280 allows gas to be simultaneously bypassed to the first RPS line 240 (and by default to the second RPS line 242 coupled to the first RPS line 240) and the fourth RPS line 250 (and by default to the fifth RPS line 252 coupled to the fourth RPS line 250). This configuration enables the cleaning gas to be supplied to the third RPS 184’ using only the third RPS line 254. Thus, for example, the cleaning gas can be supplied only to the central region or zone of the substrate processing chamber 100. Thus, a user can enable or disable one or more RPSs to control the flow of the cleaning gas to the substrate processing chamber 100.

[0088] Figure 3 is a process flow diagram of a method for uniformly depositing a cleaning gas in a substrate processing chamber according to one or more embodiments.

[0089] In block 302, a process gas is deposited using a process gas line.

[0090] In block 304, the process gas line is evacuated using a vacuum pump.

[0091] In block 306, the purge gas line is evacuated using a vacuum pump.

[0092] In block 308, argon (Ar) gas is supplied using a gas purge line.

[0093] In block 310, nitrogen trifluoride (NF 3 ) gas is supplied using a gas purge line.

[0094] In block 312, the Ar gas is purified from the purge gas line.

[0095] In block 314, the purge gas line is evacuated using a vacuum pump.

[0096] In block 316, the process gas line is evacuated using a vacuum pump.

[0097] In block 318, nitrogen gas is purified from the process gas line.

[0098] In block 320, a process gas is deposited via the process gas line.

[0099] Figure 4 is a process flow diagram of a method for simultaneously controlling five remote plasma sources (RPSs) to uniformly deposit a purge gas in a substrate processing chamber according to one or more embodiments.

[0100] In block 402, a process gas is deposited using a process gas line.

[0101] In block 404, the process gas line is evacuated using a vacuum pump.

[0102] In block 406, the purge gas line is evacuated using a common valve coupled to all five remote plasma sources (RPSs).

[0103] In block 408, one or more purge gases are supplied using five RPSs to clean a substrate processing chamber in fluid communication with the five RPSs.

[0104] In block 410, gas purification is performed on the process and purge lines.

[0105] In block 412, a process gas is deposited via the process gas line.

[0106] Figure 5It is a process flow diagram of a method for separately controlling five RPSs to uniformly deposit a cleaning gas in a substrate processing chamber according to one or more embodiments.

[0107] In block 502, a processing gas is deposited using a processing gas line.

[0108] In block 504, the processing gas line is evacuated using a vacuum pump.

[0109] In block 506, the cleaning gas line is evacuated by separately controlling five RPSs with their respective valves.

[0110] In block 508, one or more cleaning gases are supplied using five RPSs to clean a substrate processing chamber in fluid communication with the five RPSs.

[0111] In block 510, gas purification is performed on the processing and cleaning lines.

[0112] In block 512, a processing gas is deposited via the processing gas line.

[0113] Figures 6A to 6B It is a schematic layout of an RPSC system attached to a chemical vapor deposition chamber according to one or more embodiments.

[0114] Referring to Figure 6A , the RPSC system 600A is similar to Figure 2E the RPSC system 200E in Figure 2E . Compared with Figure 6A , in

[0115] Referring to Figure 6B, the RPSC system 600B includes a first bypass gas line 630, a second bypass gas line 632, and a common bypass gas line 634, and these gas lines branch to the RPS1 bypass gas line 640, the RPS2 bypass gas line 642, the RPS3 bypass gas line 644, the RPS4 bypass gas line 646, and the RPS5 bypass gas line 648. The RPS1 bypass gas line 640 includes a valve 620, the RPS2 bypass gas line 642 includes a valve 622, the RPS3 bypass gas line 644 includes a valve 624, the RPS4 bypass gas line 646 includes a valve 626, and the RPS5 bypass gas line 648 includes a valve 628. The second gas line 632 includes a valve 635. The valves 620, 622, 626, 628, and the valve 635 are kept closed so as to operate the PECVD system as in Figure 2C such that the PECVD system can be operated. Thus, each bypass gas line may include a valve for controlling how the purge gas flows to the substrate processing chamber 100.

[0116] Figure 7 is a device showing a cross-sectional view of a substrate processing chamber according to one or more embodiments, the substrate processing chamber having an RPSC system coupled thereto, the system having three RPSs and five gas lines.

[0117] Figure 7 is similar to Figure 1 and thus, for clarity, the description of similar elements will be omitted. Compared with Figure 1 Figure 7 includes three RPSs instead of five RPSs. However, there are still five gas lines leading to the substrate processing chamber 100. The RPSC system 700A is coupled to the substrate processing chamber 100 and includes a first RPS 180 (RPS1), the first RPS 180 (RPS1) being coupled to a first conduit 116A via a first gas line 190 and to a second conduit 116B via a second gas line 192. The first gas line 190 is coupled to the second gas line 192. Thus, the first RPS 180 can control the gas flow through the two gas lines 190, 192. The third RPS 184 (RPS3) is coupled to a third conduit 116C via a third gas line 194 and to a fourth conduit 116D via a fourth gas line 196. The third gas line 194 is coupled to the fourth gas line 196. Thus, the third RPS 184 can control the gas flow through the two gas lines 194, 196. This configuration can allow the use of a reduced number of RPSs while still maintaining five gas lines.

[0118] Figures 8A to 8C is attached to a chemical vapor deposition chamber according to one or more embodiments Figure 7 ​Schematic layout of the RPSC system.

[0119] Figures 8A to 8C Similar to Figures 2C to 2E , and for clarity, the description of similar components will be omitted. Compared with Figures 2C to 2E , Figures 8A to 8C includes three RPSs instead of five RPSs. However, there are still five gas pipelines leading to the substrate processing chamber 100.

[0120] Referring to Figure 8A , the RPSC system 800A includes a gas panel 160 that supplies cleaning gas to three RPSs 180’, 184’, 186’ separately. The first RPS pipeline 230 extends to the first RPS 180’ (RPS1-W). The third RPS pipeline 238 extends to the third RPS 184’ (RPS3-C). The fourth RPS pipeline 234 extends to the fourth RPS 186’ (RPS4-S). Figure 2C The second and fifth RPS pipelines and their respective RPSs shown in [] have been removed. Therefore, a three-RPS configuration with five gas pipelines is shown in the figure. The first gas pipeline 190 is coupled to the second gas pipeline 192. The fourth gas pipeline 196 is coupled to the fifth gas pipeline 198. This enables the first RPS 180’ to control the flow through two gas pipelines, namely gas pipelines 190, 192, and the fourth RPS 186’ to control the flow through two gas pipelines, namely gas pipelines 196, 198.

[0121] Referring to Figure 8B , the RPSC system 800B includes a gas panel 160 that supplies cleaning gas to three RPSs 180’, 184’, 186’ separately. The first RPS pipeline 240 extends to the first RPS 180’ (RPS1-W). The third RPS pipeline 254 extends to the third RPS 184’ (RPS3-C). The fourth RPS pipeline 250 extends to the fourth RPS 186’ (RPS4-S). Figure 2D The second and fifth RPS pipelines and their respective RPSs shown in [] have been removed. Therefore, a three-RPS configuration with five gas pipelines is shown in the figure. The first gas pipeline 190 is coupled to the second gas pipeline 192. The fourth gas pipeline 196 is coupled to the fifth gas pipeline 198. This enables the first RPS 180’ to control the flow through two gas pipelines, namely gas pipelines 190, 192, and the fourth RPS 186’ to control the flow through two gas pipelines, namely gas pipelines 196, 198.

[0122] Referring to Figure 8C, the RPSC system 800C includes a gas panel 160 that separately supplies cleaning gas to three RPSs 180’, 184’, 186’. The first RPS pipe 240 extends to the first RPS 180’ (RPS1-W). The third RPS pipe 254 extends to the third RPS 184’ (RPS3-C). The fourth RPS pipe 250 extends to the fourth RPS 186’ (RPS4-S). Figure 2E The second and fifth RPS pipes and their respective RPSs shown in Figure 2E have been removed. Thus, a three-RPS configuration with five gas lines is shown in the figure. The first gas line 190 is coupled to the second gas line 192. The fourth gas line 196 is coupled to the fifth gas line 198. This enables the first RPS 180’ to control the flow through two gas lines, namely gas lines 190, 192, and the fourth RPS 186’ to control the flow through two gas lines, namely gas lines 196, 198.

[0123] Thus, Figures 8A to 8C A three-RPS configuration is provided for supplying gas to the substrate processing chamber 100 via five gas lines. The various gas lines are coupled to the same or a common RPS, thus allowing for the use of fewer RPSs.

[0124] In summary, a method for cleaning a CVD chamber is shown and described herein. In one example, one or more cleaning gases are supplied to clean the CVD chamber. The cleaning gas is supplied to the CVD chamber using, for example, five RPSs with five gas lines. In another example, the cleaning gas is supplied to the CVD chamber using, for example, three RPSs with five gas lines, where the various gas lines are coupled to the same or a common RPS. The RPSs can be controlled individually, or as a group / subset or jointly, to supply one or more cleaning gases to the CVD chamber. In one example, each RPS supplies an equal amount of cleaning gas to respective regions or zones within the CVD chamber. In another example, a subset of the RPSs (e.g., four out of five RPSs) supplies an equal amount of cleaning gas to respective regions or zones within the CVD chamber. In yet another embodiment, each RPS supplies the same or a different amount of cleaning gas to respective regions or zones within the CVD chamber. Thus, each RPS can be controlled individually or separately relative to the other RPSs. The five RPSs are controlled to supply or deposit a uniform amount of gas throughout the interior of the CVD chamber. The thickness uniformity of the supplied or deposited gas enables the deposited material or residue within the CVD chamber to be removed appropriately and completely.

[0125] Advantages of the present disclosure include: uniform distribution of the cleaning gas; faster cleaning rate; less consumption of the cleaning gas material; operational efficiency; reduced operating cost; and increased throughput.

[0126] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from its basic scope, and the scope thereof is determined by the appended claims.

Claims

1. A device, comprising: a substrate processing chamber; as well as A remote plasma source cleaning (RPSC) system is coupled to the substrate processing chamber, wherein the RPSC system includes five or more remote plasma sources (RPS) for supplying cleaning gas to different interior regions of the substrate processing chamber.

2. The apparatus of claim 1, wherein the five or more RPSs are coupled to a common gas line to simultaneously supply the cleaning gas to the substrate processing chamber.

3. The apparatus of claim 2, wherein a bypass gas line is coupled to the common gas line.

4. The apparatus of claim 3, wherein when a valve of the bypass gas line is closed, the cleaning gas flows toward the substrate processing chamber.

5. The apparatus of claim 3, wherein when the valve of the bypass gas line is opened, the cleaning gas is blocked from flowing toward the substrate processing chamber.

6. The apparatus of claim 1, wherein a subset of the five or more RPSs are coupled to a common gas line such that the cleaning gas is supplied to the subset of the five or more RPSs.

7. The apparatus of claim 6, wherein the subset of the five or more RPSs comprises four RPSs.

8. The apparatus of claim 6, wherein RPSs excluded from the subset of the five or more RPSs are coupled to a bypass gas line.

9. The apparatus of claim 1, wherein the five or more RPSs are individually controlled to supply the cleaning gas to the substrate processing chamber.

10. The apparatus of claim 9, wherein at least a subset of the five or more RPSs are coupled to a plurality of bypass gas lines.

11. The apparatus of claim 9, wherein a common bypass gas line is coupled to a plurality of gas lines leading to the five or more RPSs to enable simultaneous activation or deactivation of a plurality of the five or more RPSs.

12. A device, comprising: a substrate processing chamber; as well as A remote plasma source cleaning (RPSC) system is coupled to the substrate processing chamber, wherein the RPSC system includes a plurality of remote plasma sources (RPS) that are individually controlled to supply cleaning gas to different interior regions of the substrate processing chamber.

13. The apparatus of claim 12, wherein the plurality of RPSs comprises at least five RPSs, each RPS comprising a respective valve, and wherein a plurality of bypass gas lines are selectively coupled to the at least five RPSs.

14. The apparatus of claim 12, wherein the plurality of RPSs include three RPSs having five gas lines, wherein at least two of the five gas lines are coupled to a common RPS among the three RPSs.

15. A method comprising: processing a substrate disposed in a substrate processing chamber; as well as A remote plasma source cleaning (RPSC) system is coupled to the substrate processing chamber, wherein the RPSC system includes five or more remote plasma sources (RPS) for supplying cleaning gas to different interior regions of the substrate processing chamber after processing the substrate.

16. The method of claim 15, wherein the five or more RPSs are coupled to a common gas line to simultaneously supply the cleaning gas to the substrate processing chamber.

17. The method of claim 16, wherein a bypass gas line is coupled to the common gas line.

18. The method of claim 17, wherein the cleaning gas flows toward the substrate processing chamber when a valve of the bypass gas line is closed.

19. The method of claim 17, wherein when the valve of the bypass gas line is opened, the cleaning gas is blocked from flowing toward the substrate processing chamber.

20. The method of claim 15, wherein the five or more RPSs are individually controlled to supply the cleaning gas to the substrate processing chamber, and wherein at least a subset of the five or more RPSs are coupled to a plurality of bypass gas lines; and The common bypass gas pipeline is coupled to a plurality of gas pipelines leading to the five or more RPSs to enable simultaneous activation or deactivation of a plurality of the five or more RPSs.

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